Light emitting device and LED packaging
By introducing a light-transmissive covering member of the annular lens part into the light emitting device, the problem of uneven light sources in the prior art is solved, and effective lateral diffusion of light and brightness uniformity are achieved.
Patent Information
- Application Number
- CN202011353601.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-08-24
- Filing Date
- 2020-11-27
- Publication Date
- 2025-05-23
- Estimated Expiration
- 2040-11-27
AI Technical Summary
In the backlight application, existing light emitting devices are difficult to effectively diffuse light laterally, resulting in uneven light sources.
The light emitting device structure is adopted that includes a substrate, a light source, a cover member, a light transmissive member, a light reflective layer and a light transmissive cover member, wherein the light transmissive cover member includes an annular lens portion, which can effectively introduce light and achieve lateral diffusion.
The effective lateral diffusion of light is achieved, the brightness uniformity of the luminous surface is improved, and the number of light sources is reduced, suitable for lighter and cheaper backlight applications.
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Figure CN112885943B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a light emitting device and an LED package. Background Art
[0002] A light emitting device has been applied, in which a reflective or diffusing component is provided on the upper surface of a transparent resin that seals a light emitting element, and light from the light emitting element is irradiated to the outside from the side of the transparent resin. The light emitting device can be used as a backlight light source, etc., because light is easily diffused laterally (for example, Patent Document 1, etc.).
[0003] Prior art literature
[0004] Patent Literature
[0005] Patent Document 1: International Publication No. 2012-099145
[0006] Patent Document 2: (Japanese) Patent Publication No. 2016-171227 Summary of the invention
[0007] Technical problem to be solved by the invention
[0008] However, in backlight applications, it is necessary to efficiently diffuse light laterally.
[0009] An object of the present invention is to provide a light emitting device that can be made thinner and can effectively diffuse light laterally.
[0010] Technical solutions for solving technical problems
[0011] The embodiments of the present invention include the following structures.
[0012] (1) A light emitting device comprises: a substrate; a light source including a light emitting element having a light emitting surface on an upper surface arranged on the substrate; a covering member covering a side of the light source and made of a resin material containing a light reflecting substance; a light transmissive member arranged on the light source; a light reflecting layer arranged on the light transmissive member; a light transmissive covering member covering at least a side surface of the light transmissive member, wherein the thickness of the light reflecting layer at an outer edge thereof is thicker than the thickness of the light reflecting layer above an optical axis of the light emitting element, and comprising an annular lens portion.
[0013] (2) An LED package comprises: a light source including a light-emitting element having a light-emitting surface on an upper surface; a translucent component arranged on the light source; and a light reflecting layer arranged on the translucent component, wherein the light source comprises a resin package and a light-emitting element, and the resin package comprises: a lead portion including a first lead portion and a second lead portion; a resin portion for retaining the lead portion; and a recess having the first lead portion, the second lead portion, and a portion of the resin portion as a bottom surface and a portion of the resin portion as a side wall, wherein the light-emitting element is placed on the bottom surface of the recess.
[0014] Effects of the Invention
[0015] According to the present invention, it is possible to provide a light emitting device capable of more effectively diffusing light laterally. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1A It is a schematic perspective view showing a light emitting device according to one embodiment of the present invention.
[0017] Figure 1B yes Figure 1A A schematic cross-sectional view of the I-I' section.
[0018] Figure 1C This is a schematic cross-sectional view of a light emitting device according to another embodiment of the present invention.
[0019] Figure 2 It is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention.
[0020] Figure 3A Yes Figure 1B An enlarged schematic cross-sectional view of a portion of a light emitting device.
[0021] Figure 3B Observed from the bottom Figure 3A A schematic diagram of a portion of a light emitting device.
[0022] Figure 4 This is a schematic cross-sectional view showing an enlarged portion of a light emitting device according to another embodiment.
[0023] Figure 5A This is a schematic cross-sectional view showing an enlarged portion of a light emitting device according to another embodiment.
[0024] Figure 5B Yes Figure 1B An enlarged schematic cross-sectional view of a portion of the light emitting device is shown.
[0025] Figure 5C This is a schematic cross-sectional view showing an enlarged portion of a light emitting device according to another embodiment.
[0026] Fig. 6A It is a schematic plan view showing a light emitting device according to another embodiment.
[0027] Figure 6B It is a schematic plan view showing a light emitting device according to another embodiment.
[0028] Figure 7 It means having Figure 1C A schematic cross-sectional view of an integrated light-emitting device having a two-dimensional arrangement of light-emitting devices is shown.
[0029] Figure 8 Yes Figure 7 An enlarged schematic cross-sectional view of a portion of the integrated light emitting device is shown.
[0030] Fig. 9 It will be Figure 8 An enlarged schematic top view of a portion of one of the optical laminates used in the integrated light emitting device is shown.
[0031] Fig. 10A It is a schematic plan view showing a light source used in a light emitting device according to another embodiment of the present invention.
[0032] Fig. 10B yes Fig. 10A A schematic cross-sectional view of section II-II'.
[0033] Fig.11 It means use Fig. 10A A schematic cross-sectional view of an LED package of another embodiment of a light source.
[0034] Fig.12 It is a schematic cross-sectional view showing a light emitting device according to another embodiment of the present invention. DETAILED DESCRIPTION
[0035] The following describes a method for implementing the present invention with reference to the accompanying drawings. However, the method described below is an example for concretizing the technical idea of the present invention, and does not limit the present invention to the following method. In addition, in order to make the description accurate, the size and positional relationship of the components shown in the various drawings are exaggerated, and terms indicating specified directions or positions (such as "upper", "lower" and other terms including the above terms) are used as needed. However, the above terms are used to facilitate the understanding of the invention with reference to the accompanying drawings, and the technical scope of the present invention is not limited by the meaning of the above terms. For example, a top view refers to a view from above. Figure 1A When viewed from the Z-axis direction, "up" refers to the direction based on the Z-axis. In addition, the same names and symbols represent the same or homogeneous components in principle, and repeated descriptions are appropriately omitted.
[0036] like Figure 1A , 1BAs shown in 1C, a light emitting device 10 according to an embodiment of the present invention includes: a substrate 20, a light source 30, a covering member 40, a translucent member 50, a light reflecting layer 60, and a translucent covering member 70. The translucent covering member 70 includes a lens portion 71 that covers at least the side surface 51 of the translucent member 50. In addition, the thickness of the translucent covering member 70 on the outer edge of the light reflecting layer 60 is thicker than the thickness of the light reflecting layer 60 on the optical axis of the light emitting element 31 described later. This means that the translucent covering member 70 covers at least a portion of the upper surface of the light reflecting layer 60, that is, the optical axis ( Figure 6B In FIG. 1 , the upper surface of the light reflecting layer 60 above A) is exposed.
[0037] Thus, by forming the light-transmitting cover member 70 of the above-mentioned unique shape, it is difficult for the light from the light source to be emitted from above (directly above) the light reflecting layer 60, while the light from the light source is propagated inside the light-transmitting member 50 so that it can be emitted to the outside mainly from the side of the light-transmitting member 50. Thus, the light can be effectively introduced into the light-transmitting cover member 70. As a result, lateral diffusion of light can be achieved.
[0038] In addition, by configuring the translucent covering component 70 with a thickness of 0 or a thin film above the central portion of the light reflecting layer, the height of the lens portion 71 can be reduced as a whole, so the light-emitting device having the highest lens portion above the central portion of the light reflecting layer can be thinned.
[0039] Therefore, when the light-emitting device is arranged directly below the light guide plate as a backlight light source, it is possible to achieve thinning and lateral diffusion of light. As a result, the in-plane uniformity of the brightness of the light-emitting surface can be improved. In addition, the number of light sources can be reduced, and it can help to provide a lighter and cheaper surface light-emitting device used in backlights, etc.
[0040] (Substrate 20)
[0041] The substrate 20 is a component for mounting the light source 30. Figure 1B , 1C As shown, there are wiring 21 for supplying electric power to the light source 30, and a base 22 on which the wiring 21 is arranged. In addition, a cover layer 23 that covers a part of the wiring 21 may be arbitrarily arranged.
[0042] The substrate 22 can be formed of, for example, a resin such as a phenolic resin, an epoxy resin, a polyimide resin, a BT resin, polyphthalamide (PPA), polyethylene terephthalate (PET), or a ceramic. Among them, resin can be used from the perspective of low cost and easy molding. In addition, in order to form a light-emitting device with good heat resistance and light resistance, ceramics can be used as the material of the substrate 22. As ceramics, for example, alumina, mullite, forsterite, glass ceramics, nitrides (such as AlN), carbides (such as SiC), etc. can be cited. Among them, ceramics formed of alumina or having alumina as the main component are preferred.
[0043] When resin is used as the material constituting the base 22, glass fiber, SiO 2 、TiO 2 、Al 2 O 3 Inorganic fillers such as quartz and tantalum are mixed into the resin to improve mechanical strength, reduce thermal expansion coefficient, and improve light reflectivity. In addition, the substrate 20 may be a member in which an insulating portion is formed on a metal member.
[0044] The wiring 21 is a member for electrically connecting to the electrodes of the light source 30 and supplying current (electric power) from the outside, and has at least two patterns separated into positive and negative.
[0045] The wiring 21 is formed on at least the upper surface of the substrate 20, which is the mounting surface of the light source 30. The material of the wiring 21 can be appropriately selected according to the material of the base 22, etc. For example, when ceramic is used as the material of the base 22, the material of the wiring 21 can be exemplified by a material having a high melting point that can withstand the firing temperature of the ceramic sheet. For example, a high melting point metal such as tungsten or molybdenum is preferably used. It can also be covered with a metal material such as nickel, gold, or silver by electroplating, sputtering, evaporation, etc.
[0046] When a resin is used as the material of the substrate 22, the material of the wiring 21 can be a material that is easy to process. In addition, when the substrate 22 is formed by injection-molded resin, the material of the wiring 21 can be a material that is easy to process by stamping, etching, bending, etc., and has a large mechanical strength. For example, metal plates, lead frames, etc. such as copper, aluminum, gold, silver, tungsten, iron, nickel, iron-nickel alloy, phosphor bronze, iron-containing copper, and molybdenum can be cited. Its surface can also be covered with a metal material. As the metal material, for example, a single layer or multilayer structure of silver or an alloy of silver and copper, gold, aluminum, rhodium, etc. can be cited. It can be covered by electroplating, sputtering, evaporation, etc.
[0047] The covering layer 23 is usually formed of an insulating material. The covering layer 23 preferably covers the other parts of the wiring 21 except the parts electrically connected to the light source 30 and other materials. The covering layer 23 can be formed of a material that absorbs less light from the light-emitting element. For example, epoxy resin, silicone resin, modified silicone resin, polyurethane resin, oxetane resin, acrylic resin, polycarbonate resin, polyimide resin, etc. are mentioned. The covering layer 23 is not only used to insulate the wiring 21, but also contains white fillers to prevent light leakage and absorption, and can also improve light output efficiency through reflection. In addition, as described later, in the case of contact with the translucent covering component 70 (for example Figure 1B As shown), it is possible to improve the close contact with the light-transmitting cover member 70, etc.
[0048] (Light source 30)
[0049] The light source 30 includes a light emitting element 31. The light source 30 is disposed on the substrate 20. When the light source 30 is composed of only the light emitting element 31, the upper surface 31c of the light emitting element 31 is the light emitting surface of the light source 30. Figure 3A As shown, the surface of the light emitting element 31 on the substrate 20 side is called the lower surface 31b, the surface opposite to the lower surface or the opposite side is called the upper surface 31c, and the surface adjacent to the upper surface 31c is called the side surface 31a. Other components are sometimes also referred to as the side surface, lower surface and upper surface based on this.
[0050] like Figure 3A , Figure 3B and Figure 4 As shown in FIG. 1 and FIG. 2 , the light source 30 preferably includes a wavelength conversion component 34, 84 on the light emitting element 31. In addition, the light source 30 preferably has a side surface ( Figure 3A The fourth light-transmitting component 35 is 31a).
[0051] (Light emitting element 31)
[0052] The light emitting element 31 includes a semiconductor laminate 32 and a pair of electrodes 33p and 33n located on one side of the semiconductor laminate 32. When the light emitting element 31 is observed from the upper surface 31c side (the light emitting surface side of the light source when the light source is composed of only the light emitting element), the top view shape can be a polygon such as a quadrilateral or hexagon, a circle, or an ellipse. Figure 3B As shown, the light emitting element 31 preferably has a quadrilateral shape, particularly a square shape, or a shape close thereto in plan view.
[0053] The semiconductor laminate 32 includes a semiconductor layer having a light-emitting layer. In addition, it may also have a light-transmitting substrate such as sapphire. As a semiconductor laminate, a semiconductor layer including a first conductive semiconductor layer (e.g., an n-type semiconductor layer), a light-emitting layer (active layer), and a second conductive semiconductor layer (e.g., a p-type semiconductor layer). As a semiconductor layer that can emit ultraviolet light and visible light from blue light to green light, for example, a III-V compound semiconductor can be used, specifically, In X Al Y Ga 1-X-Y Nitride semiconductors such as N (0≦X, 0≦Y, X+Y≦1). As the semiconductor layer capable of emitting red light, semiconductors such as GaAs, GaAlAs, GaP, InGaAs, and InGaAsP can be used. The thickness of the semiconductor laminate 32 can be, for example, 3 μm to 500 μm.
[0054] The electrodes 33p and 33n can be formed of materials and structures known in the art with any thickness. The electrodes 33p and 33n can be formed, for example, of a single layer or laminated film of a metal such as Au, Pt, Pd, Rh, Ni, W, Mo, Cr, Ti, Al, Cu, Sn, Fe, Ag, or an alloy of the above metals. Specifically, the above-mentioned electrodes can be formed from the semiconductor layer side by a laminated film of Ti / Rh / Au, Ti / Pt / Au, W / Pt / Au, Rh / Pt / Au, Ni / Pt / Au, Al-Cu alloy / Ti / Pt / Au, Al-Si-Cu alloy / Ti / Pt / Au, Ti / Rh, etc. In addition, solders such as AuSn, SnAgCu, and SnPb can also be used. The electrodes 33p and 33n can be formed, for example, to have a thickness in the range of 1 μm to 300 μm, preferably a thickness in the range of 5 μm to 100 μm. The planar shape of the electrodes 33p and 33n can be set arbitrarily.
[0055] The light emitting element 31 electrically connects the electrodes 33p and 33n to the wiring 21 of the substrate 20 opposite to each other. For the above connection, the light emitting element 31 may also be connected to a metal layer 36 useful as an external connection terminal on the surface of the electrodes 33p and 33n. The metal layer 36 preferably has better corrosion resistance and oxidation resistance than the electrodes 33p and 33n. The metal layer 36 may be formed of a high melting point metal such as Ru, Mo, Ta, etc. The thickness of the metal layer 36 may be, for example, 10nm to 50μm. The metal layer 36 may be a size that reaches the side surface on the lower surface of the light emitting device 10, preferably a size separated from the side surface. The metal layer may be configured to cover a portion of the lower surface of the cover member 40 described later. Thus, on the lower surface of the light emitting device, an external connection terminal having a larger area ratio than the electric field of the light emitting element may be exposed to the outside. Thus, when the light emitting element 31 or the light source 30 is actually mounted on the substrate 20 using a bonding member 24 such as solder, it can be actually mounted with good position accuracy. In addition, the bonding strength between the wiring 21 and the light emitting element 31 or the light source 30 can be improved.
[0056] (Wavelength conversion components 34, 84)
[0057] The wavelength conversion component 34, 84 is a component that absorbs light from the light emitting element 31 and converts it into light of a different wavelength, and contains a fluorescent substance. The wavelength conversion component 34, 84 is arranged on the light emitting surface (upper surface 31c) of the light emitting element 31. In addition, it is arranged below the light-transmitting component 50 described later. By arranging the wavelength conversion component 34, the light from the light emitting element 31 and the light from the wavelength conversion component 34 can be incident on the light-transmitting component 50. In the case where the light source 30 is composed of the light emitting element 31 and the wavelength conversion component 43, 84, the upper surface of the wavelength conversion component 43, 84 is the light emitting surface 31L of the light source 30.
[0058] The wavelength conversion member 34, 84 preferably covers the entire light emitting surface (upper surface 31c) of the light emitting element 31. Figure 3AAs shown, the wavelength conversion member 34 is preferably arranged with its outer edge 34a outside the outer edge 31g of the light emitting element 31 in a plan view. The shape of the wavelength conversion member in a plan view may be a polygon such as a quadrilateral or hexagon, a circle, an ellipse, etc. The plane area of the wavelength conversion member 34 is, for example, larger than 100% of the plane area of the light emitting surface (upper surface 31c) of the light emitting element 31, preferably less than 200%, and more preferably in the range of 110% to 160%. The wavelength conversion member 34 is preferably arranged so that its center (or center of gravity) coincides with the center (or center of gravity) of the light emitting surface (upper surface 31c) of the light emitting element 31. In this way, the width of the outer peripheral portion of the wavelength conversion member 34 located outside the light emitting surface (upper surface 31c) of the light emitting element 31 can be made substantially constant, and the generation of color unevenness can be suppressed. The wavelength conversion member 34 is preferably in the shape of a plate with upper and lower surfaces parallel to each other. Its side surface may be any surface such as a vertical surface, an inclined surface, a curved surface, etc.
[0059] The thickness of the wavelength conversion member 34, 84 can be appropriately selected according to the type and amount of the phosphor used, the target chromaticity, etc. For example, the thickness of the wavelength conversion member 34 can be in the range of 20 μm to 200 μm, preferably in the range of 100 μm to 180 μm.
[0060] The wavelength conversion components 34 and 84 may contain a base material such as a light-transmitting resin material, glass, and a phosphor as a wavelength conversion material, or may be formed of a ceramic containing a phosphor or a single crystal of a phosphor. As the base material, for example, a thermosetting resin such as a silicone resin, a silicon-modified resin, an epoxy resin, a phenolic resin, a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a polymethylpentene resin, and a polynorbornene resin may be used. Silicone resins with good light resistance and heat resistance are particularly suitable. As ceramics, materials obtained by firing a light-transmitting material such as alumina may be cited.
[0061] Any phosphor known in the art can be used as the phosphor. Examples of phosphors that can be excited by a blue light emitting element or an ultraviolet light emitting element include cerium-activated yttrium / aluminum / garnet phosphors (YAG:Ce); cerium-activated lutetium / aluminum / garnet phosphors (LAG:Ce); europium and / or chromium-activated nitrogen-containing calcium aluminosilicate phosphors (CaO-Al 2 O 3 -SiO 2 ); Europium-activated silicate phosphor ((Sr, Ba) 2 SiO 4 ); β-sialon phosphor, CASN phosphor, SCASN phosphor and other nitride phosphors; KSF phosphor (K 2 SiF 6:Mn); sulfide phosphors, quantum dot phosphors, etc. By combining the above phosphors with a blue light-emitting element or an ultraviolet light-emitting element, light-emitting devices of various colors (for example, white light-emitting devices) can be manufactured. One or more of the above phosphors can be used. When using multiple phosphors, they can be mixed as a single layer, or layers containing each phosphor can be laminated. In addition, in order to adjust the viscosity, etc., the wavelength conversion component can also contain various fillers.
[0062] For example, Figure 4 As shown, when the wavelength conversion component 84 is a multi-layered structure, it is preferred that the layer containing the filler as the diffusion layer 83 is arranged on the uppermost layer. In this case, as the layer containing the phosphor, it can be a first layer 81 and a second layer 82 containing different phosphors. For example, it can be exemplified that the second layer 82 contains a KSF-type phosphor and the first layer 81 contains a β-sialon phosphor. By making multiple layers contain different types of phosphors, it is possible to suppress the mutual absorption of phosphors, improve the wavelength conversion efficiency, and become a light-emitting device with higher light output. In the wavelength conversion component 84, the diffusion layer 83 can be, for example, 50μm to 200μm, preferably 50μm to 100μm. The layer containing the phosphor can be appropriately adjusted according to the type and content of the phosphor. For example, as the second layer 82 containing the KSF-type phosphor, it is exemplified as 50μm to 500μm, preferably 75μm to 200μm. The first layer 81 containing the β-sialon phosphor may have a thickness of 10 μm to 100 μm, and preferably 20 μm to 80 μm.
[0063] The wavelength conversion member 34, 84 can be arranged directly or via a certain member on the light emitting surface (upper surface 31c) of the light emitting element 31. When the wavelength conversion member 34 is directly arranged, that is, when the wavelength conversion member 34 is brought into contact with the light emitting surface (upper surface 31c) of the light emitting element 31, for example, the arrangement can be performed using a direct bonding method of bonding at room temperature.
[0064] When the arrangement is performed via a certain component, a translucent adhesive can be used. For example, the translucent adhesive can be used as a fourth translucent component 35 to cover the entire lower surface located on the opposite side of the upper surface of the wavelength conversion component 34 and a part or all of the side surface 31a of the light emitting element 31, in addition to between the wavelength conversion component 34 and the light emitting element 31. In this way, by covering the side surface 31a of the light emitting element 31 with the fourth translucent component 35, the light emitted from the side surface 31a of the light emitting element 31 can be effectively guided to the wavelength conversion component 34 and then to the translucent component 50. In addition, the wavelength conversion component 34 can also be located on the side surface of the light emitting element 31. In this case, the side surface of the light source is the side surface of the wavelength conversion component.
[0065] In the case where the fourth light-transmitting component 35 covers the side surface 31a of the light-emitting element 31, it is preferred that the fourth light-transmitting component 35 is thickest on the light-emitting surface side and is configured to be thinner as it approaches the electrode side. Such a thickness inclination can be linear or a curve that is concave inward. For example, the thickness of the light-emitting surface side of the fourth light-transmitting component 35 can be equivalent to the length from the outer edge of the lower surface of the wavelength conversion component 34 to the outer edge 31g of the light-emitting surface (upper surface 31c) of the light-emitting element 31. Thus, after the light emitted from the side surface 31a of the light-emitting element 31 is incident on the fourth light-transmitting component 35, it is reflected upward (in the direction of the light-emitting surface of the light-emitting element 31) by the outer surface of the fourth light-transmitting component 35 and is incident on the light-transmitting component 50. By having the above-mentioned fourth light-transmitting component 35, the light from the light-emitting element 31 can be effectively incident on the light-transmitting component 50.
[0066] The fourth light-transmitting component 35 may be made of a light-transmitting resin material. For example, a resin material having a thermosetting resin such as silicone resin, silicone-modified resin, epoxy resin, phenolic resin, etc. as a main component is preferred. The fourth light-transmitting component 35 may have a transmittance of 70% or more, preferably 80% or more, and more preferably 90% or more with respect to light from the light-emitting element.
[0067] It is particularly preferred that the fourth light-transmitting member 35 covers 50% or more of the side surface 31 a of the light-emitting element 31 .
[0068] like Figure 3B As shown in FIG. 1 , the fourth light-transmitting member 35 preferably has a substantially circular outer shape on the light-emitting surface side. By forming the above shape, the light emitted from the side surface 31a of the light-emitting element 31 can be effectively guided to the wavelength conversion member 34. The fourth light-transmitting member 35 of the above shape can be formed by pouring a liquid material of the fourth light-transmitting member 35 on a flat light-transmitting member 50 described later.
[0069] (Covering member 40)
[0070] The cover member 40 is a member that covers the side of the light source 30. The cover member 40 is made of a resin material containing a light-reflecting substance.
[0071] When the light source 30 is composed of only the light emitting element 31, the covering member 40 preferably covers the side surface 31a of the light emitting element 31 and covers a portion of the lower surface 31b of the light emitting element 31. In addition, the covering member 40 preferably covers the lower surface 31b of the light emitting element 31 so that at least a portion (lower surface, surface on the opposite side of the semiconductor laminate) of each of the pair of electrodes 33p and 33n of the light emitting element 31 is exposed.
[0072] In the case where the light source 30 includes the light emitting element 31, the wavelength conversion member 34, and the fourth light-transmitting member 35, the covering member 40 preferably covers the side surface of the light emitting element 31 directly or via a certain member. In addition, the covering member 40 preferably covers the fourth light-transmitting member 35 arbitrarily. In addition, in the case where a part of the side surface of the light emitting element 31 is not covered by the fourth light-transmitting member 35, it is preferred to cover the side surface of the light emitting element 31 that is not covered. In addition, the covering member 40 preferably covers a part or all of the side surface and a part of the lower surface of the wavelength conversion member 34, and more preferably covers the whole side surface and a part of the lower surface of the wavelength conversion member 34. In particular, the covering member 40 more preferably contacts and covers the side surface 31a of the light emitting element 31, the fourth light-transmitting member 35, and the whole side surface and a part of the lower surface of the wavelength conversion member 34.
[0073] When the light source 30 is composed of only the light emitting element 31, the upper surface of the cover member 40 is preferably flush with the upper surface 31c of the light emitting element 31. In addition, when the light source 30 includes the light emitting element 31 and the wavelength conversion member 34, it is preferably flush with the upper surface (light emitting surface 31L) of the wavelength conversion member 34. However, even in the above case, there may be a slight height difference, for example, a height difference of about 1% to 20% of the thickness of the wavelength conversion member 34.
[0074] As described above, when the metal layer 36 is connected to the electrodes 33 p and 33 n, it is preferable that the covering member 40 is arranged so as not to cover the metal layer 36 , in other words, to arrange the metal layer 36 between the metal layer 36 and the substrate.
[0075] The maximum thickness of the covering member 40 is preferably the same as the total thickness of the light emitting element 31 and the wavelength conversion member 34. The thickness is, for example, in the range of 200 μm to 10000 μm, preferably in the range of 300 μm to 600 μm.
[0076] For example, the reflectivity of the cover member 40 with respect to the light from the light emitting element 31 can be set to 70% or more, preferably 80% or more, and more preferably 90% or more.
[0077] As the resin material constituting the cover member 40, for example, a resin material mainly composed of a thermosetting resin such as silicone resin, silicone modified resin, epoxy resin, phenolic resin, etc. can be cited. As the light reflective substance, for example, a white substance can be cited, specifically, titanium dioxide, silicon dioxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, boron nitride, mullite, etc. The light reflective component contained in the resin material can be appropriately adjusted in consideration of the thickness of the cover member 40, the size of the light emitting element, etc.
[0078] (Light-transmitting member 50)
[0079] The light-transmitting member 50 is disposed on the light source 30 and is used together with the light-reflecting layer 60 described later to control the light distribution characteristics of the light-emitting device 10. The light-transmitting member 50 can particularly propagate light emitted from the light-emitting surface 31L of the light source in a lateral direction.
[0080] When the light source 30 is composed of only the light emitting element 31, the light-transmitting member 50 may be placed directly on the upper surface of the light-emitting element or via a certain member, and when the light source 30 includes the wavelength conversion member 34, the light-transmitting member 50 may be placed directly on the upper surface of the wavelength conversion member 34 or via a certain member. When the light-transmitting member 50 is directly arranged, that is, when the light-transmitting member 50 is brought into contact with the upper surface of the wavelength conversion member 34 or the light-emitting element 31, for example, the arrangement may be performed by a direct bonding method at room temperature.
[0081] In the case of indirect arrangement, a light-transmitting adhesive may be used. The light-transmitting adhesive may be the same material as exemplified in the fourth light-transmitting member.
[0082] The light-transmitting component 50 is preferably a plate-shaped component whose upper and lower surfaces are parallel, but it may also have a part or all of non-parallel surfaces. For example, there may be a slight height difference on its upper surface or lower surface. As a height difference, a height difference of about 1% to 10% of the thickness of the light-transmitting component 50 is allowed. In addition, the upper surface or the lower surface of the light-transmitting component 50 may also be inclined at a degree or less relative to the other. The thickness of the light-transmitting component 50 can be appropriately adjusted according to the size of the light-emitting element, the size and thickness of the wavelength conversion component, the size of the light-emitting device, etc. For example, the light-transmitting component 50 can be 10% to 80% of the maximum width of the light-emitting surface of the light source (the maximum width of the wavelength conversion component 34 in the case of a wavelength conversion component 34), preferably 20% to 60%. Specifically, the thickness of the light-transmitting component 50 can be 200μm to 2000μm, preferably 300μm to 1000μm, and more preferably 350μm to 600μm. From another perspective, the thickness of the light-transmitting member 50 may be approximately 20% to 80% of the thickness of the light-emitting device 10 .
[0083] By setting the thickness of the translucent component 50 to the above thickness, the light emitted to the side of the light emitting device 10 can be emitted farther. The light emitted from the side of the translucent component 50 is mainly divided into: direct light directly from the light emitting surface 31L of the light source to the side of the translucent component 50, light that contacts the light reflecting layer 60 described later and is reflected and scattered, and light reflected and scattered by the upper surface of the covering component located on the side of the light source and contacts the side of the translucent component 50 and emits indirect light. Among them, the component of direct light can further output light to the side (lateral) of the light emitting device, and can also be output upward. In other words, it can be output obliquely upward when the light emitting device is cut. As a result, the light distribution characteristics of the bat wing type can be easily obtained, and when the thickness of the translucent component is adjusted relative to the maximum width of the light emitting surface 31L (wavelength conversion component), the ratio of direct light to indirect light changes, so various bat wing-shaped light distribution characteristics can also be easily obtained. It should be noted that the lateral direction mentioned in the present embodiment mainly refers to the true lateral (horizontal) direction, but of course it is not limited to the true lateral (horizontal) direction, and also includes obliquely downward and obliquely upward.
[0084] It is preferred that the thickness of the light-transmitting member 50 be constant over the entire surface.
[0085] The side surface of the light-transmitting member 50 is preferably perpendicular to the upper surface or the lower surface, but may be inclined at an angle of 10 degrees or less to the upper surface or the lower surface, or may be a curved surface, or a combination of both.
[0086] The plane area of the light-transmitting component 50 is preferably, for example, 100% to 1000% of the plane area of the light-emitting surface of the light-emitting element 31, and more preferably in the range of 300% to 700%. In addition, the plane area of the light-transmitting component 50 is preferably, for example, 100% to 500% of the plane area of the wavelength conversion component 34, and more preferably in the range of 150% to 450%. The light-transmitting component 50 is preferably arranged so that its center (or center of gravity) coincides with the center (or center of gravity) of the upper surface of the light-emitting element 31 and / or the center (or center of gravity) of the upper surface of the wavelength conversion component 34, that is, the center (or center of gravity) of the light-emitting surface of the light source. It should be noted that the larger the plane area of the light-transmitting component 50 is than the plane area of the light-emitting surface of the light-emitting element 31 and / or the wavelength conversion component 34 when observed from the light-emitting surface, the more color unevenness can be reduced.
[0087] In addition to being in direct or through contact with the upper surface of the light emitting element 31 or the wavelength conversion component 34, the light-transmitting component 50 is preferably in direct or through contact with the upper surface of the covering component 40. In addition, the light-transmitting component is preferably configured from the upper surface of the light emitting element 31 or the wavelength conversion component to the upper surface of the covering component 40. From another perspective, the light-transmitting component is preferably configured so that the light emitting element 31 or the wavelength conversion component and the covering component are integrated to form an upper surface, and is configured on the upper surface. In addition, the side surface 51 of the light-transmitting component 50 is preferably flush with the side surface of the covering component 40. The flush mentioned here, for example, allows for a convex and concave of about 1% to 10% of the thickness of the light-transmitting component 50. As a result, the light from the light source 30 can be effectively introduced into the light-transmitting component 50, and is effectively reflected by the light reflecting layer 60 described later, so that the light can be easily output to the outside from the side surface 51.
[0088] The light-transmitting member 50 may have a transmittance of 70% or more, preferably 80% or more, and more preferably 90% or more, with respect to the light from the light source 30 .
[0089] The light-transmitting component 50 can be made of a light-transmitting resin material, glass, etc. For example, thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenolic resin, and thermoplastic resins such as polycarbonate resin, acrylic resin, polymethylpentene resin, and polynorbornene resin can be cited. Among them, silicone resin with good light resistance and heat resistance is preferred. The light-transmitting component 50 preferably does not actually contain the fluorescent substance described later. It is preferred not to contain diffusing materials, etc. However, it may also contain. In the case where the light-transmitting component 50 is formed only of resin material or glass, it is possible to suppress the scattering of light inside the light-transmitting component 50, and the light reflected by the lower surface of the light-reflecting layer 60 described later and the upper surface of the covering component 40 can be effectively emitted to the outside from the side 51 of the light-transmitting component 50.
[0090] (Light Reflecting Layer 60)
[0091] The light reflecting layer 60 is a component disposed on the light-transmitting member 50. The light reflecting layer 60 preferably covers the entire upper surface of the light-transmitting member 50. The light reflecting layer 60 is preferably disposed in contact with the upper surface of the light-transmitting member 50 directly or via some other component. The light reflecting layer 60 can reflect light from the light source 30 toward the light-emitting surface, that is, the side surface 51 of the light-transmitting member 50.
[0092] For example, the reflectivity of the light reflecting layer 60 with respect to the light from the light source 30 is 50% or more, preferably 70% or more, and more preferably 90% or more. The light reflecting layer 60 is preferably thick enough to make the transmittance of the light from the light source 30 50% or less, 40% or less, or 30% or less. In addition, the light reflecting layer 60 preferably makes the transmittance of the light from the light source 30 greater than 0%, more preferably 10% or more, or 15% or more. Thus, by mixing the light emitted from the light-transmitting member with a portion of the light transmitted through the light reflecting layer, the uniformity of brightness when the entire surface is observed from above the light source can be improved.
[0093] The light reflecting layer 60 can be formed of, for example, a resin material containing a light reflecting substance, a metal material, an inorganic material using a dielectric multilayer film, etc. Among them, the light reflecting layer 60 is preferably white, and more preferably formed of a resin material containing a light reflecting substance.
[0094] As the light reflective substance and the resin material, it is possible to select from the materials exemplified by the covering member 40. The metal material preferably uses a metal material with a high light reflectivity, and examples thereof include silver, aluminum, rhodium, gold, copper, and alloys of one or more of the above metals. The dielectric multilayer film may include materials using titanium dioxide, silicon dioxide, zirconium oxide, potassium titanate, aluminum oxide, aluminum nitride, and the like.
[0095] The light reflecting layer 60 preferably has upper and lower surfaces parallel to the light emitting surface of the light source 30, that is, has a uniform thickness, but its upper or lower surface may have concave and convex shapes, or may be convex relative to the light emitting surface side. Thus, it is possible to easily reflect the light from the light source 30 in the lateral direction of the light emitting device 10. The concave and convex shapes of the upper or lower surface of the light reflecting layer 60 may be, for example, about 1% to 20% of the thickness (maximum thickness) of the light reflecting layer 60.
[0096] When the light reflecting layer 60 is a layer having different thicknesses, it is preferable that the thickness of the thinnest portion be such that the transmittance of the light from the light source 30 is 50% or less.
[0097] When a resin material containing a light-reflecting substance is used as the light-reflecting layer 60, the transmittance of light varies depending on the composition and content of the light-reflecting substance. Therefore, it is preferable to appropriately adjust the thickness according to the material used. For example, when the light-reflecting layer 60 is composed of a resin material containing a light-reflecting substance and has a uniform thickness, the thickness can be in the range of 100 μm to 500 μm, preferably in the range of 100 μm to 300 μm.
[0098] (Light-transmitting cover member 70)
[0099] The light-transmitting cover member 70 includes a lens portion 71. The lens portion mentioned here is a portion that refracts light to diverge or focus, and refers to a surface on the opposite side of the surface facing the light source and the substrate. The lens portion 71 is usually composed of a spherical surface or a curved surface, and surrounds the light source 30 in a ring shape or a ring shape similar to a concave center portion. As a result, the light-emitting device 10 can have a light-emitting surface in a 360-degree direction centered on the light-emitting device 10 in a top view.
[0100] The light-transmitting cover member 70 may have a plane or a nearly plane surface in a portion thereof and above the optical axis of the light-emitting element 31 in addition to the lens portion 71. The nearly plane surface mentioned here may be, for example, a surface having concavities and convexities on the surface of the plane. The size of the concavities and convexities may be, for example, about 1% to 20% of the maximum thickness of the light-transmitting cover member 70 disposed on the light-reflecting layer 60 above the optical axis of the light-emitting element 31.
[0101] The light-transmitting cover member 70 preferably covers at least a part or all of the side surface 51 of the light-transmitting member 50. In addition, the light-transmitting cover member 70 may cover a part or all of the side surface of the light-reflecting layer 60, may cover a part or all of the upper surface of the light-reflecting layer 60, or may cover a part or all of the cover member 40. Figure 1B As shown, the light-transmitting cover member 70 preferably covers the entire side surface 51 of the light-transmitting member 50, the entire side surface of the light-reflecting layer 60, and a portion of the side surface of the cover member 40. In this case, the light-transmitting cover member 70 can be formed as a ring structure as shown in FIG. Figure 5A As shown, the inner edge, that is, the inner edge 76, is consistent with the outer edge 61 of the light reflecting layer 60, or Figure 1B and Figure 5B As shown, the inner edge, that is, the inner edge 75, covers the peripheral area 62 of the upper surface of the light reflecting layer 60. In other words, the light-transmitting cover member 70 covers at least the outer edge 61 of the light reflecting layer 60, exposing a portion of the upper surface of the light reflecting layer 60. Here, the portion of the upper surface of the light reflecting layer 60 preferably includes the upper surface of the light reflecting layer 60 above the optical axis of the light emitting element 31.
[0102] Here, the light reflecting layer 60 is formed of a resin containing a white reflective substance, and the above-mentioned translucent covering member is provided, thereby further improving the brightness uniformity when the light source is observed from above. For example, in the use of backlight, when a diffuser is arranged and used above the light-emitting device, the reflected light can be scattered by the diffuser on the light reflecting layer 60, and uniform light with uniform color can be obtained. In detail, inside the translucent covering member, in the present embodiment as a structure in which light is emitted from the side of the translucent member, because the proportion of light that passes through a part of the light reflecting layer and is output upward is reduced, when the entire surface is observed from above the light source, the light axis of the light-emitting element may be darker than other parts. In particular, in the case of a surface light-emitting device in which a diffuser is provided above the light source, when the light-emitting surface of the diffuser is observed from above, the light axis of the light-emitting element becomes darker, which may appear as a dark spot. In contrast, according to the present embodiment, the dark spot can be reduced, and as a light-emitting device or a surface light-emitting device, the brightness uniformity when observed from the upper surface can be improved. This is because the brightness uniformity can be particularly improved when the light-transmitting cover member 70 exposes a part of the upper surface of the light-reflecting layer 60 or exposes the entire upper surface (when the thickness is 0).
[0103] When the light-transmitting cover member 70 covers the upper surface of the light-reflecting layer 60 and exposes a portion thereof, the exposed area may be 100% of the upper surface area of the light-reflecting layer 60, and may be 50% or more, preferably 60% or more, and more preferably 70% or more. In other words, the width of the peripheral region 62 (that is, the width of the outer peripheral region 62) is 100% of the upper surface area of the light-reflecting layer 60. Figure 5B The distance from the outer edge 61 of the light reflecting layer 60 to the inner edge 75 of the light-transmitting cover member 70 can be 5% to 90% of the maximum width of the light reflecting layer 60. Figure 5C Alternatively, as shown in the case where the light-transmitting cover member 70 exposes at least a portion of the upper surface of the light-reflecting layer 60 , that is, the upper surface of the light-reflecting layer 60 above the optical axis of the light-emitting element 31 Figure 5B As shown, in the case where the translucent covering part 70 covers the upper surface of the light reflecting layer 60, the thickness T1 of the translucent covering part 70 on the outer edge 61 of the light reflecting layer 60 is preferably thicker than the thicknesses T2 and T3 on the upper surface of the light reflecting layer 60, and is particularly more preferably thicker than the thickness T3 of the light reflecting layer 60 above the optical axis A of the light emitting element.
[0104] It should be noted that if Figure 5A As shown, even when the inner edge 76 of the translucent covering part 70 is consistent with the outer edge 61 of the light reflecting layer 60, the thickness T4 of the translucent covering part 70 on the outer edge 61 of the light reflecting layer 60 is thicker than the thickness (0) on the upper surface of the light reflecting layer 60.
[0105] For example, the maximum thickness of the light-transmitting cover member 70 in the Z direction ( Figure 1B (Tx) is in the range of 300 μm to 5000 μm, preferably in the range of 800 μm to 2500 μm.
[0106] The maximum width of the light-transmitting cover member 70 on the substrate 20 ( Figure 1B WX in the figure can be appropriately adjusted according to the size and brightness of the light source 30, but for example it can be in the range of 1mm to 10mm, preferably in the range of 2mm to 8mm.
[0107] For example, Figure 1B As shown, the light-transmitting cover member 70 may also include: a second light-transmitting member 72 covering the side surface of the light-transmitting member 50, and a third light-transmitting member 73 covering the second light-transmitting member 72 and constituting the lens portion 71. Figure 2 As shown, the light-transmitting cover member 70 may be composed of a fifth light-transmitting member 74 formed by integrating the second light-transmitting member and the third light-transmitting member with the same material.
[0108] For example, the second light-transmitting component 72, the third light-transmitting component 73 and the fifth light-transmitting component 74 constituting the light-transmitting cover component 70 may have a transmittance of 70% or more, preferably 80% or more, and more preferably 90% or more, relative to light from the light-emitting element.
[0109] The second light-transmitting component 72, the third light-transmitting component 73, and the fifth light-transmitting component 74 can be formed using the same material as the material exemplified by the light-transmitting component 50. In particular, as the second light-transmitting component 72, it is preferred to select a material having a refractive index smaller than that of the material constituting the third light-transmitting component 73 from among the materials exemplified by the light-transmitting component 50. By selecting the above-mentioned material, light can be refracted upward, and light from the light source can be used more effectively. In addition, by using the second light-transmitting component 72, it is possible to prevent bubbles from being generated in the lens portion 71 of the light-transmitting cover component 70. In particular, in the case of casting, it is possible to prevent voids from entering (voids can be prevented). It should be noted that the light-transmitting cover component 70 preferably contains fillers in the above-mentioned material in order to adjust its shape, thereby adjusting the viscosity. Among them, the viscosity and thixotropy of the third light-transmitting component 73 are preferably higher than the viscosity and thixotropy of the second light-transmitting component 72.
[0110] The second light-transmitting member 72 preferably has a different thickness. However, it may also have a uniform thickness throughout the entirety. For example, the second light-transmitting member 72 may be a film that is thickest on the light-transmitting member 50 side, then decreases linearly, and is thinnest at the portion farthest from the light-transmitting member 50. By utilizing the above-mentioned inclination, the light emitted from the light-transmitting member 50 can be diffused further upward and laterally.
[0111] The translucent cover member 70 can be formed, for example, by a method known in the art. Among them, it is preferably formed by casting. With respect to the light source 30 having the cover member 40, the translucent member 50 and the light reflecting layer 60, for example, the following two methods can be cited. Method 1 is to move the nozzle that discharges the material constituting the translucent cover member so that the material is discharged and a circle is drawn with the light source as the center; method 2 is to arrange multiple nozzles that discharge the material, such as four, six or eight, around the light source, so that an appropriate amount of material is discharged from each nozzle, and the materials discharged from adjacent nozzles are connected to each other. By the above method, the translucent cover member 70 can be easily formed into a desired shape.
[0112] (Light reflecting member 41)
[0113] The light emitting device 10 preferably further includes a light reflecting member 41 between the substrate 20, the cover member 40, and the light-transmitting cover member 70. Even if a light absorbing material is disposed around the light emitting element 31 in the substrate 20, the light absorbing material can be covered by disposing the light reflecting member 41, and absorption of light from the light source can be effectively prevented.
[0114] The light reflective component 41 can be arranged on any component such as the base 22, the wiring 21, the cover layer 23, the bonding component 24, etc., and is preferably arranged on all the components. In addition, it is preferably also arranged on the substrate 20 directly below the light emitting element 31. The light reflective component 41 on the substrate 20 can be of uniform thickness or of different thicknesses. For example, the light reflective component 41 can be in the shape of a film that is the thickest near the light source, then linearly decreases and is the thinnest at the part farthest from the light source. By utilizing the above-mentioned inclination, the light emitted from the light-transmitting component 50 can be reflected further upward and laterally. Thus, a light-emitting device that emits laterally diffuse and bright light can be provided.
[0115] When the light reflective member 41 is arranged in this manner, part of the light-transmitting cover member 70 is arranged on the light reflective member 41, and the other part is arranged on the cover layer 23 of the substrate 20 (for example, Figure 1B ). However, if Figure 1CAs shown, the light-transmitting cover member 70 may also be entirely disposed on the light-reflecting member 41. In this case, the light-reflecting member 41 is disposed on the upper surface of the cover layer 23 of the substrate 20. Thus, it is easy to dispose the light-transmitting cover member 70 in an appropriate shape and at an appropriate position. It should be noted that Figure 1C and Figure 1B The same is observed in other embodiments Figure 1A This is a schematic cross-sectional view of the perspective view of such a light emitting device taken along the line II'.
[0116] In addition, the viscosity and thixotropy of the light reflective member 41 are preferably lower than the viscosity and thixotropy of the second light transmissive member 72. This makes it possible to easily achieve the above-mentioned inclination.
[0117] The light emitting device 10 may be a light emitting device having a plurality of light emitting devices arranged on a substrate. Fig. 6A As shown, a plurality of light emitting devices 10 are arranged in a row on a substrate 20, or as shown in FIG. Figure 6B As shown, a plurality of light emitting devices 10 are arranged in a matrix on a substrate 20. The spacings between the plurality of light emitting devices 10 are preferably the same. However, they may be different. The spacing between the light emitting devices 10 may be appropriately adjusted according to the size, brightness, etc. of the light emitting devices. For example, the spacing between the light emitting devices 10 ( Fig. 6A The diameter (P) is in the range of 5 mm to 100 mm, preferably in the range of 15 mm to 50 mm.
[0118] Figure 7 Indicates that Figure 1B or Figure 1C The light emitting devices 10 shown are examples of two-dimensionally arranged integrated light emitting devices. Figure 7 The integrated light emitting device 200 shown includes Figure 1C The arrangement of sixteen units of the same structure as shown in the figure is arranged in a row and column shape of four rows and four columns in the XY plane of the figure. As shown in the figure, there is a second reflecting component 170 including a plurality of inclined surfaces 174s. The plurality of inclined surfaces 174s extend in the X direction or the Y direction of the figure, and each light emitting device 10 is surrounded by four inclined surfaces among the plurality of inclined surfaces 174s.
[0119] The integrated light emitting device 200 is a surface emitting light source including a plurality of light emitting regions arranged in four rows and four columns, and is useful as a backlight of a liquid crystal display device, for example. Figure 7 As shown, according to the structure in which each light emitting device 10 is surrounded by a plurality of inclined surfaces 174s, it is possible to suppress uneven brightness of each light emitting region and to suppress uneven brightness of each light emitting region group.
[0120] Figure 82 is a cross-sectional view showing one of the light emitting devices 10 in the integrated light emitting device 200. The integrated light emitting device 200 has a plurality of light emitting devices 10 arranged two-dimensionally. The light emitting device 10 has an optical laminate 180. The optical laminate 180 includes, for example, a semi-transparent mirror 181, a diffuser plate 182, and at least one prism sheet 183. Figure 8 In the example shown, the optical laminate 180 further includes a prism sheet 184 and a polarizer 185. The optical laminate 180 is preferably located on the substrate 20 supporting the light emitting device 10, and the prism sheet 183 is preferably located on the emission surface side. The diffuser 182 is preferably located between the semi-transparent mirror 181 and the prism sheet 183.
[0121] The semi-transparent mirror 181 transmits a part of the light incident from the substrate 20 side, and reflects a part of the light toward the substrate 20 side. Fig. 9 The schematic top view of the semi-mirror 181 is shown. The semi-mirror 181 includes a plurality of holes 181h and 181g provided on the main surface. In the present embodiment, the holes 181h and 181g are physical through holes that extend from the main surface of one side to the main surface of the other side. In the region of the holes 181h and 181g, the semi-mirror 181 does not actually reflect light but allows it to pass through. Therefore, a two-dimensional distribution can be set for the light transmission characteristics and reflection characteristics of the semi-mirror 181 according to the size, number and position of the holes 181h and 181g, so that uneven brightness and uneven color can be suppressed, and light incident from the substrate side can be emitted to the diffuser 182. In the case where the semi-mirror 181 is composed of a translucent substrate and a dielectric multilayer film supported by the substrate, the holes are not provided in the substrate, and the dielectric multilayer film is not provided in the region of the holes 181h and 181g, thereby achieving the same optical characteristics.
[0122] exist Fig. 9 In the example shown, the hole 181h is larger than the hole 181g and is arranged above the wall portion 174 (the portion of the second light reflecting member 170 including the inclined surface 174s) surrounding the four sides of the light emitting device 10. The hole 181g is arranged in a concentric circle with respect to the center of the light emitting device 10. In addition, the hole 181g is also arranged at the corner of the quadrilateral area surrounded by the wall portion 174. By arranging the hole 181h with a larger diameter above the wall portion 174, light leaks to the area of the adjacent light emitting element at the boundary of the wall portion 174, and the edge line is weakened at the boundary divided by the wall portion 174.
[0123] The diffuser 182 diffuses the light that has passed through the semi-transparent mirror 181 in the traveling direction, thereby reducing uneven brightness and color. The prism sheets 183 and 184 change the traveling direction of the incident light to refraction, thereby emitting it forward. The prism sheets 183 and 184 make the light further emit forward by arranging the prisms orthogonally to each other, thereby increasing the brightness in the front. The polarizer 185, for example, reflects the S wave of the incident light and transmits the P wave, thereby making the polarization direction of the emitted light consistent, thereby increasing the brightness of the light emitted from the light emitting device 10 on the specified polarization plane. This is particularly effective when the integrated light emitting device 200 is used as a backlight for a liquid crystal panel.
[0124] like Fig. 10A and Fig. 10B As shown, a light source 90 used in a light emitting device according to another embodiment of the present invention may include a light emitting element 31 and a resin package 95 including a lead portion 93 and a resin portion 94. The light source 90 may include a wire 96a connecting the lead portion 93 and the light emitting element 31.
[0125] The resin portion 94 holds the lead portion 93. The lead portion 93 includes a first lead portion 91 and a second lead portion 92. The resin package 95 has a concave portion 94a having a bottom surface 94b formed by the first lead portion 91, the second lead portion 92, and a portion of the resin portion 94, and a side wall formed by a portion of the resin portion 94. The upper surface of the side wall of the resin portion 94 has an opening with a bottom, which can be used as a cathode mark 94c. It should be noted that the cathode mark 94c can also be used as an anode mark.
[0126] The shape of the recessed portion 94 a of the resin portion 94 is not particularly limited. For example, the bottom surface 94 b may be a quadrilateral, particularly a square, when viewed from above.
[0127] The light emitting element 31 is disposed on the bottom surface 94b of the recess 94a. Fig. 10A and Fig. 10B In the embodiment, two light emitting elements are arranged on the bottom surface of the concave portion, but the number of light emitting elements may be one or more. The planar shape of the light emitting element 31 is not particularly limited, and may be, for example, a rectangular shape. Fig. 10A and Fig. 10BIn the embodiment, both light emitting elements 31 are arranged across the first lead portion 91 and the second lead portion 92. The two light emitting elements are connected in series. Specifically, the first lead portion 91 and one light emitting element 31x are connected via a wire 96a, and one light emitting element 31x is connected to the other light emitting element 31y via a wire 96c. The wire may be a metal such as gold, copper, silver, platinum, aluminum, palladium, or an alloy wire containing one or more of these metals. It is particularly preferred to use a wire containing both gold and silver. When the wire contains both gold and silver, the silver content is, for example, in the range of 15% to 20%, 45% to 55%, 70% to 90%, or 95% to 99%.
[0128] A sealing member 98 is disposed in the recess 94a, and the upper surface of the sealing member 98 serves as a light emitting surface 98L of the light source. The sealing member 98 may contain a wavelength conversion material. Alternatively, a layer of a wavelength conversion material may be disposed between the sealing member 98 and the light emitting element 31.
[0129] like Fig.11 As shown, the light source 90 is arranged on the substrate 20 , the light-transmitting member 50 is arranged on the light source 90 , and the light-reflecting layer 60 is arranged on the light-transmitting member 50 , thereby forming an LED package 99 .
[0130] The light-transmitting member 50 disposed above the light source 90 is in contact with the light-emitting surface 98L and the upper surface of the side wall of the resin portion 94. The light-transmitting member 50 may be disposed within the cathode mark 94c of the resin portion 94. In this case, the cathode mark 94c can have an anchoring effect of the light-transmitting member 50 on the resin portion 94. Therefore, the close contact between the light source 90 and the light-transmitting member 50 can be strengthened.
[0131] The thickness of the light-transmitting member 50 can be specifically exemplified as being 200 μm or more and 2000 μm or less, preferably 300 μm or more and 1000 μm or less, and more preferably 350 μm or more and 600 μm or less. In addition, when viewed from above, it is preferred that the ratio of the area of the upper surface of the sealing member 98 to the area of the upper surface of the sealing member 98 and the upper surface of the side wall of the resin portion 94 is 0.25 or more and 0.5 or less.
[0132] like Fig.12 As shown, in a light-emitting device 11 of another embodiment of the present invention, an LED package 99 containing a light source 90 is carried on a substrate 20, and the substrate 20 includes a wiring 21, a base 22 for configuring the wiring 21, and a covering layer 23, and a translucent covering component 70 including a ring-shaped lens portion 71 is arranged on the LED package 99.
[0133] The light-transmitting cover member 70 may include a second light-transmitting member 72 covering the side surface of the light-transmitting member 50, and a third light-transmitting member 73 covering the second light-transmitting member 72 and constituting the lens portion 71. As described above, the lens portion 71 covers at least the side surface of the light-transmitting member 50, and the thickness of the light-reflecting layer 60 at the outer edge is thicker than the thickness of the light-reflecting layer 60 above the optical axis of the light-emitting element 31.
[0134] Description of Reference Numerals
[0135] 10, 11 light-emitting device; 20 substrate; 21 wiring; 22 base; 23 covering layer; 24 bonding component; 30 light source; 31, 31x, 31y light-emitting element; 31L light-emitting surface; 31a side surface; 31b lower surface; 31c upper surface; 31g outer edge; 32 semiconductor laminate; 33n electrode; 33p electrode; 34 wavelength conversion component; 34a outer edge; 35 fourth light-transmitting component; 36 metal layer; 40 covering component; 41 light-reflecting component; 50 light-transmitting component; 51 side surface; 60 light-reflecting layer; 61 outer edge; 62 peripheral area; 70 light-transmitting covering component; 71 lens portion; 72 second light-transmitting component; 73 third light-transmitting component; 74 fifth Translucent component; 75, 76 inner edge; 81 first layer; 82 second layer; 83 diffusion layer; 84 wavelength conversion component; 90 light source; 91 first lead portion; 92 second lead portion; 93 lead portion; 94 resin portion; 94a recess; 94b bottom surface; 94c cathode mark; 95 resin package; 96a wire; 96b wire; 96c wire; 98 sealing component; 98L light emitting surface; 99 LED package; A optical axis; 174 wall portion; 174s inclined surface; 170 second reflecting component; 180 optical laminate; 181 semi-transparent mirror; 181h, 181g holes; 182 diffuser; 183, 184 prism sheet; 185 polarizer; 200 integrated light-emitting device.
Claims
1. A light emitting device, It is characterized in that have: substrate; A light source, comprising a light emitting element, disposed on the substrate, and having a light emitting surface on the upper surface; A covering member, which covers the side of the light source and is made of a resin material containing a light-reflecting substance; a light-transmitting component, which is disposed above the light source; a light reflecting layer disposed on the light-transmitting component; A light-transmitting cover member covers at least the side surface of the light-transmitting member, has a thickness thicker at the outer edge of the light-reflecting layer than at the light-reflecting layer above the optical axis of the light-emitting element, and includes an annular lens portion.
2. The light emitting device according to claim 1, It is characterized in that The light source includes a wavelength conversion component on the light emitting element.
3. The light emitting device according to claim 2, It is characterized in that In a plan view, the outer edge of the wavelength conversion member is arranged outside the outer edge of the light emitting element.
4. The light emitting device according to any one of claims 1 to 3, It is characterized in that The light-transmitting cover member covers at least the outer edge of the light-reflecting layer, exposing the light-reflecting layer above the optical axis of the light-emitting element.
5. The light emitting device according to any one of claims 1 to 3, It is characterized in that The light-transmitting cover member includes a second light-transmitting member that covers a side surface of the light-transmitting member, and a third light-transmitting member that covers the second light-transmitting member and constitutes a lens portion.
6. The light emitting device according to any one of claims 1 to 3, It is characterized in that The light reflecting layer is made of a resin material containing the light reflecting substance.
7. The light emitting device according to claim 1, It is characterized in that It also has a fourth light-transmitting component connected to the side surface of the light-emitting element, The covering member covers the side surface of the light emitting element and the fourth light-transmitting member.
8. The light emitting device according to claim 2 or 3, It is characterized in that It also has a fourth light-transmitting component connected to the side surface of the light-emitting element and the lower surface of the wavelength conversion component, The covering member covers the side surfaces of the light emitting element, the fourth light-transmitting member, and the side surfaces of the wavelength conversion member.
9. The light emitting device according to any one of claims 1 to 3, It is characterized in that The light-transmitting member has a thickness of 10% to 80% of the maximum width of the light-emitting surface of the light source.
10. The light emitting device according to any one of claims 1 to 3, It is characterized in that A light reflective member is further provided between the substrate, the cover member, and the light-transmitting cover member.
11. The light emitting device according to any one of claims 1 to 3, It is characterized in that A plurality of light emitting devices are arranged on the substrate.
Citation Information
Patent Citations
Light-emitting device and manufacturing method of the same
JP2016171227A
Light emitting device, lighting device, display device, and method for manufacturing light emitting device
WO2012099145A1
Leadframe or substrate for LED, semiconductor device, and method for manufacturing leadframe or substrate for LED
CN102804428A
Light-emitting device
JP2019009429A