Quantum dot material, quantum dot light-emitting device, display device and manufacturing method

Abstract

The present invention discloses a quantum dot material, a quantum dot light-emitting device, a display device and a manufacturing method to solve the problem in the prior art that after patterning the quantum dot film layer, there will be obstruction of carrier transmission, reduction of device electrical performance and reduction of luminous efficiency. The quantum dot material comprises: a quantum dot body, a connector, and a first ligand; one end of the connector is connected to the quantum dot body, and the other end is connected to the first ligand; the first ligand comprises one or a combination of the following:

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a quantum dot material, a quantum dot light-emitting device, a display device and a manufacturing method. Background Art

[0002] As a new type of luminescent material, quantum dots (QD) have the advantages of high light color purity, high luminescent quantum efficiency, adjustable luminescent color, and long service life, and have become a research hotspot for new LED luminescent materials. Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the luminescent layer have become the main research direction of new display devices.

[0003] In mass production, QD graphics are mainly inkjet printing processes, but due to equipment limitations, its resolution is limited to less than 200ppi, so a higher resolution graphics method is needed. The traditional photolithography process for patterning is divided into direct and indirect methods. The indirect method usually requires the use of photoresist to form pixel grooves, and then the photoresist is stripped after the quantum dots are coated. This method generally has photoresist residues, which affects the electrical performance of the device. The direct method is to introduce photocrosslinking groups into the quantum dot ligands so that the ligands crosslink under certain conditions, changing their solubility, thereby leaving quantum dots in specific places.

[0004] However, after the prior art forms a patterned quantum dot film layer through an indirect method, there are problems such as obstructed carrier transmission, reduced device electrical performance, and reduced luminous efficiency. Summary of the invention

[0005] The present invention provides a quantum dot material, a quantum dot light-emitting device, a display device and a manufacturing method to solve the problem in the prior art that after patterning the quantum dot film layer, carrier transmission is blocked, the electrical performance of the device is reduced, and the luminous efficiency is reduced.

[0006] The embodiment of the present invention provides a quantum dot material, comprising: a quantum dot body, a connector, and a first ligand; one end of the connector is connected to the quantum dot body, and the other end is connected to the first ligand; the first ligand comprises one or a combination of the following:

[0007]

[0008] Wherein, R includes one or a combination of the following:

[0009] Alkyl chain;

[0010] Aromatic rings;

[0011] Heterocyclic ring.

[0012] In a possible embodiment, the connector includes a first connecting structure and a second connecting structure; one end of the first connecting structure is connected to the quantum dot body, and the other end is connected to one end of the second connecting structure; the other end of the second connecting structure is connected to the first ligand.

[0013] In a possible implementation manner, the first connection structure includes one of the following:

[0014] -SH;

[0015] -COOH;

[0016] -NH2.

[0017] In a possible implementation, the second connecting structure includes an alkyl chain.

[0018] An embodiment of the present invention further provides a quantum dot light-emitting device, comprising: a base substrate, and a quantum dot film layer located on one side of the base substrate and having a plurality of pattern portions; wherein the pattern portions include the quantum dot material provided by the embodiment of the present invention.

[0019] In a possible implementation manner, the first ligands in the pattern portion are cross-linked by different first ligands in the pattern portion when irradiated with light in a first wavelength band, and are de-cross-linked when irradiated with light in a second wavelength band.

[0020] In a possible implementation manner, a functional layer is further provided between the substrate and the quantum dot film layer; a siloxane body and a second ligand connected to the siloxane body are connected to the side of the functional layer facing the quantum dot film layer;

[0021] The first ligand of the pattern portion is the same as the second ligand of the corresponding region.

[0022] In a possible implementation, the first ligand in the pattern portion is cross-linked with the second ligand in the corresponding area when irradiated with light in a first wavelength band, and is de-cross-linked when irradiated with light in a second wavelength band.

[0023] In a possible implementation, the quantum dot light-emitting device includes at least two pattern portions with different light emission colors, the first ligands of all the pattern portions are the same, and all the second ligands of the functional layer are the same.

[0024] In a possible implementation, the quantum dot light-emitting device includes at least two pattern portions with different light emission colors, the first ligands of the pattern portions with the same light emission colors are the same, and the first ligands of the pattern portions with different light emission colors are different.

[0025] In a possible implementation manner, a first electrode layer is disposed between the base substrate and the functional layer, and a second electrode layer is disposed on a side of the quantum dot film layer facing away from the functional layer.

[0026] An embodiment of the present invention further provides a display device, comprising the quantum dot light-emitting device provided by the embodiment of the present invention.

[0027] The embodiment of the present invention provides a method for manufacturing the quantum dot light-emitting device provided in the embodiment of the present invention, comprising:

[0028] Providing a substrate;

[0029] A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and irradiated with light of a first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern parts;

[0030] The second wavelength band light is used to irradiate all the pattern parts, so that all the pattern parts are de-crosslinked.

[0031] In a possible implementation, a quantum dot film of at least one light emitting color is formed on one side of the base substrate, and is irradiated with light of a first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern parts, including:

[0032] A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of a first wavelength band so that different first ligands in the quantum dot film in the irradiated area are cross-linked to form a plurality of pattern parts.

[0033] In a possible implementation, before forming a quantum dot film of at least one light-emitting color on one side of the substrate, the manufacturing method further includes: forming a functional layer on one side of the substrate, wherein the functional layer is connected to a siloxane body and a second ligand connected to the siloxane body on a side away from the substrate;

[0034] The method comprises forming a quantum dot film of at least one light-emitting color on one side of the base substrate, and irradiating the first wavelength band light to cross-link the irradiated area to form a plurality of pattern parts, including:

[0035] A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of a first wavelength band so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern portions.

[0036] In a possible implementation, forming a functional layer on one side of the base substrate includes: forming a functional layer having the same second ligand as pattern portions of different light emitting colors on one side of the base substrate;

[0037] The method comprises forming a quantum dot film of at least one light emitting color on one side of the base substrate, and irradiating the first wavelength band light so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including:

[0038] When forming the quantum dot film of each light emitting color, the first wavelength band light is used for irradiation through the shielding of the mask plate, so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area, and the quantum dot film that is not cross-linked is removed to form a plurality of pattern parts of one light emitting color;

[0039] The above steps are repeated multiple times to form the pattern portion with multiple light emitting colors.

[0040] In a possible implementation, forming a functional layer on one side of the base substrate includes: forming a functional layer having different second ligands corresponding to pattern portions of different light emitting colors on one side of the base substrate;

[0041] The method comprises forming a quantum dot film of at least one light emitting color on one side of the base substrate, and irradiating the first wavelength band light so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including:

[0042] Forming a variety of quantum dot films with different light emission colors;

[0043] Irradiating the functional layer in different regions with the first ligand in the quantum dot film in corresponding regions by the first wavelength band light once;

[0044] The quantum dot film that has not been cross-linked is removed to form a plurality of pattern parts.

[0045] The beneficial effects of the embodiments of the present invention are as follows: the quantum dot material provided by the embodiments of the present invention, wherein the first ligand is a reversible photoresponsive cross-linking system, can be cross-linked when irradiated with light in the first band, and de-cross-linked when irradiated with light in the second band, and then when a patterned quantum dot film layer is formed by the quantum dot material provided by the embodiments of the present invention, during the patterning process, the irradiated area can be cross-linked by irradiating with light in the first band, which is not easily removed in the subsequent cleaning process, while the quantum dot material in the non-cross-linked area can be removed during the cleaning process to achieve patterning of the quantum dot film layer. After patterning, the cross-linked area can be de-cross-linked by irradiating with light in the second band, and then while achieving patterning of the quantum dot film layer, the influence of the cross-linked structure on the carrier transport performance can be avoided, thereby improving the problems in the prior art of carrier transport obstruction, reduced device electrical performance, and reduced luminous efficiency after patterning the quantum dot film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 A schematic diagram of the structure of a quantum dot material provided by an embodiment of the present invention;

[0047] Figure 2 One of the structural schematic diagrams of the quantum dot device provided by the embodiment of the present invention;

[0048] Figure 3 The second structural schematic diagram of the quantum dot device provided by the embodiment of the present invention;

[0049] Figure 4 The third structural schematic diagram of the quantum dot device provided by the embodiment of the present invention;

[0050] Figure 5 A fourth structural schematic diagram of a quantum dot device provided in an embodiment of the present invention;

[0051] Figure 6 One of the schematic diagrams of the manufacturing process of the quantum dot device provided in the embodiment of the present invention;

[0052] Figure 7 The second schematic diagram of the manufacturing process of the quantum dot device provided by the embodiment of the present invention;

[0053] Figure 8 The third schematic diagram of the manufacturing process of the quantum dot device provided by the embodiment of the present invention;

[0054] Fig. 9 A schematic diagram of cross-linking inside a quantum dot film layer provided in an embodiment of the present invention;

[0055] Fig.10 A fourth schematic diagram of the manufacturing process of a quantum dot device provided in an embodiment of the present invention;

[0056] Fig.11 The fifth schematic diagram of the manufacturing process of the quantum dot device provided in the embodiment of the present invention. DETAILED DESCRIPTION

[0057] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0058] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0059] In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of well-known functions and well-known components.

[0060] In the process of forming a patterned quantum dot film layer by an indirect method, the ligands are cross-linked together, which usually changes the ligand structure, that is, the ligand structure is different before and after cross-linking. The cross-linking system will cause certain obstacles to the transmission of holes and electrons, affecting the electrical properties of the device. At the same time, the previous electrical optimization results will no longer be applicable after the quantum dots are cross-linked, resulting in a decrease in the luminescence efficiency of the quantum dot film layer.

[0061] In view of this, see Figure 1 The embodiment of the present invention provides a quantum dot material, comprising: a quantum dot body QD, a connector L, and a first ligand Y; one end of the connector L is connected to the quantum dot body QD, and the other end is connected to the first ligand Y; the first ligand Y comprises one or a combination of the following:

[0062]

[0063] Wherein, R includes one or a combination of the following:

[0064] Alkyl chain;

[0065] Aromatic rings;

[0066] Heterocyclic ring.

[0067] The quantum dot material provided by the embodiment of the present invention, wherein the first ligand is a reversible photoresponsive cross-linking system, can be cross-linked when irradiated with light in the first band, and de-cross-linked when irradiated with light in the second band. Furthermore, when a patterned quantum dot film layer is formed by the quantum dot material provided by the embodiment of the present invention, during the patterning process, the irradiated area can be cross-linked by irradiating with light in the first band, which is not easily removed during the subsequent cleaning process, while the quantum dot material in the non-cross-linked area can be removed during the cleaning process to achieve patterning of the quantum dot film layer. After patterning, the cross-linked area can be de-cross-linked by irradiating with light in the second band. While achieving patterning of the quantum dot film layer, the influence of the cross-linked structure on the carrier transport performance can be avoided, thereby improving the problems in the prior art of carrier transport obstruction, reduced device electrical performance, and reduced luminous efficiency after patterning the quantum dot film layer.

[0068] In one possible implementation, combining Figure 1 As shown, the connector L includes a first connecting structure X and a second connecting structure Z; one end of the first connecting structure X is connected to the quantum dot body QD, and the other end is connected to one end of the second connecting structure Z; the other end of the second connecting structure Z is connected to the first ligand Y.

[0069] In a possible implementation, the first connection structure X may include one of the following:

[0070] -SH;

[0071] -COOH;

[0072] -NH2.

[0073] In the embodiment of the present invention, the first connecting structure X may include -SH, -COOH or -NH2, which can achieve connection with the quantum dot body QD.

[0074] In a possible implementation, the second connecting structure Z may include an alkyl chain. Alternatively, the second connecting structure Z may also include other carbon skeletons.

[0075] Specifically, for example, the first ligand Y includes When the cross-linking and de-cross-linking process occurs, it can be:

[0076]

[0077] Specifically, for example, the first ligand Y includes When the cross-linking and de-cross-linking process occurs, it can be:

[0078]

[0079] Specifically, for example, the first ligand Y includes When the cross-linking and de-cross-linking process occurs, it can be:

[0080]

[0081] Based on the same inventive concept, see Figure 2 As shown, an embodiment of the present invention further provides a quantum dot light-emitting device, comprising: a base substrate 1, a quantum dot film layer 2 located on one side of the base substrate 1 and having a plurality of pattern portions 20; wherein the pattern portion 20 comprises the quantum dot material provided by an embodiment of the present invention, and the ligands of the pattern portion 20 are cross-linked when irradiated with light of a first wavelength band, and are decross-linked when irradiated with light of a second wavelength band. The quantum dot light-emitting device may be an electroluminescent device or a photoluminescent device; specifically, the quantum dot light-emitting device may be a quantum dot light-emitting diode (QLED) or a quantum dot photoluminescent unit (e.g., a quantum dot color conversion unit in a QD-OLED display device).

[0082] In a possible implementation, the multiple pattern portions of the quantum dot light-emitting device may be pattern portions with the same light-emitting color, and the quantum dot light-emitting device is a quantum dot device that emits monochromatic light; the quantum dot light-emitting device may include at least two pattern portions with different light-emitting colors, for example, in combination with Figure 2 As shown, it includes a first pattern portion 21 emitting red light, a second pattern portion 22 emitting green light, and a third pattern portion 23 emitting blue light, and the quantum dot light emitting device is a display device.

[0083] In a specific implementation, the pattern portion 20 can be formed by cross-linking the first ligands of different quantum dot bodies within the quantum dot film layer itself, and then patterning, or it can be formed by cross-linking the first ligand of the quantum dot film layer with the second ligand of the functional layer, and then patterning.

[0084] Specifically, in a possible implementation, the first ligand Y of the pattern portion 20 is cross-linked by different first ligands in the pattern portion 20 when irradiated with light of the first wavelength, and is de-cross-linked when irradiated with light of the second wavelength. In the embodiment of the present invention, the patterning of the quantum dot film layer can be achieved by cross-linking different first ligands in the quantum dot film layer when irradiated with light of the first wavelength.

[0085] Specifically, in a possible implementation, combined with Figure 3 and Figure 4 As shown, there is a functional layer 3 between the substrate 1 and the quantum dot film layer 2; the side of the functional layer 3 facing the quantum dot film layer 2 is connected with a siloxane body A, and a second ligand Y' connected to the siloxane body A; the first ligand Y of the pattern portion 20 is the same as the second ligand Y' of the corresponding area, and the first ligand Y of the pattern portion 20 is cross-linked with the second ligand Y' of the corresponding area when irradiated with light in the first band, and is de-cross-linked when irradiated with light in the second band. Specifically, the corresponding area can be understood as the area of ​​the functional layer 3 that is directly opposite to the pattern portion 20. In the embodiment of the present invention, there is a functional layer 3 between the substrate 1 and the quantum dot film layer 2. In the process of patterning the quantum dot film layer 2, the patterning of the quantum dot film layer can be achieved by cross-linking the quantum dot film layer 2 and the functional layer 3; in addition, the siloxane body A provided on the side of the functional layer 3 facing the quantum dot film layer 2 can achieve the formation of the second ligand Y' on the surface of the functional layer 3.

[0086] Specifically, before the functional layer 3 is connected to the siloxane body A, it can be a functional layer having -OH groups on the surface. For example, the functional layer 3 can be an electron transport layer. The material of the electron transport layer can be nanoparticles or sputtered thin films. The material can be ZnO or ZnO doped with various metals (the doped metal can be Mg, Al, Li, Y, Zr, Sn, In, Ga, Cu, etc.). The surface of the electron transport layer can have -OH groups, which can be combined with the siloxane chain (HO-Si-Y') connected to the second ligand Y' to form the siloxane body A. For another example, the functional layer 3 can also be a hole transport layer. The material of the hole transport layer can be inorganic nickel oxide, vanadium oxide, molybdenum oxide, tungsten oxide, graphene oxide, etc. The surface of the hole transport layer can have -OH groups, which can be combined with the siloxane chain (HO-Si-Y') connected to the second ligand Y' to form the siloxane body A.

[0087] In one possible implementation, combining Figure 3 As shown, the quantum dot light-emitting device includes at least two pattern parts with different light-emitting colors, the first ligand Y of all pattern parts is the same, and all second ligands Y' of the functional layer 2 are the same. In the embodiment of the present invention, the first ligand Y of all pattern parts is the same, and all second ligands Y' of the functional layer 2 are the same. When forming the pattern part of each light-emitting color, it can be shielded by a mask plate and irradiated with light of the first wavelength band once to achieve the cross-linking of the first ligand Y of the quantum dot film layer 2 in the irradiated area of ​​the color and the second ligand Y' of the functional layer 3, and the quantum dot film layer 2 of the color is patterned, and the pattern parts of other colors can be formed in sequence.

[0088] In one possible implementation, combining Figure 4As shown, the quantum dot light emitting device includes at least two pattern parts with different light emission colors, the first ligand Y of the pattern parts with the same light emission color is the same, and the first ligand Y of the pattern parts with different light emission colors is different, for example, Figure 4 As shown, the ligands of the first pattern portion 21 emitting red light are all Y1, the ligands of the second pattern portion 22 emitting green light are all Y2, and the ligands of the third pattern portion 23 emitting blue light are all Y3; the first ligand Y (Y1) of the first pattern portion 21 emitting red light is different from the first ligand Y (Y2) of the second pattern portion 22 emitting green light, the first ligand Y (Y1) of the first pattern portion 21 emitting red light is different from the first ligand Y (Y3) of the third pattern portion 23 emitting blue light, and the first ligand Y (Y2) of the second pattern portion 22 emitting green light is different from the first ligand Y (Y3) of the third pattern portion 23 emitting blue light. In the embodiment of the present invention, the first ligand Y of the pattern parts with different light emitting colors is different. When forming a plurality of pattern parts with different light emitting colors, firstly, the corresponding second ligand Y' is formed in the area of ​​the functional layer 3 corresponding to the pattern parts with different light emitting colors (for example, the second ligand Y' formed in the area of ​​the functional layer 3 corresponding to the first pattern part 21 is Y1, the second ligand Y' formed in the area of ​​the functional layer 3 corresponding to the second pattern part 22 is Y2, and the second ligand Y' formed in the area of ​​the functional layer 3 corresponding to the third pattern part 22 is Y3, and then, the red light emitting pattern parts can be coated at one time. The quantum dot material includes a quantum dot material that emits green light and a quantum dot material that emits blue light. Through a single exposure to light of the first wavelength band, the second ligand Y'(Y1) of the functional layer 3 can be cross-linked with the first ligand Y(Y1) contained in the quantum dot material that emits red light, the second ligand Y'(Y12) of the functional layer 3 can be cross-linked with the first ligand Y(Y2) contained in the quantum dot material that emits green light, and the second ligand Y'(Y3) of the functional layer 3 can be cross-linked with the first ligand Y(Y3) contained in the quantum dot material that emits blue light, thereby simplifying the production process of forming a plurality of different light-emitting color pattern portions.

[0089] In one possible implementation, combining Figure 5As shown, the side of the base substrate 1 facing the functional layer 3 may also be provided with a first electrode layer 51, and the side of the quantum dot film layer 2 facing away from the functional layer 3 may also be provided with a second electrode layer 52; specifically, the quantum dot light-emitting device may be an inverted QLED device, the first electrode layer 51 may be a cathode layer, the second electrode layer 52 may be an anode layer, the functional layer 3 may be an electron transport layer, an electron injection layer 6 may be provided between the functional layer 3 and the first electrode layer 51, a hole transport layer 8 may be provided between the quantum dot film layer 2 and the second electrode layer 52, and a hole injection layer 7 may be provided between the hole transport layer 8 and the second electrode layer 52. Specifically, the quantum dot light-emitting device may also be a positive QLED device, the first electrode layer 51 may also be an anode layer, the second electrode layer 52 may also be a cathode layer, the functional layer 3 may also be a hole transport layer, a hole injection layer may also be provided between the functional layer 3 and the first electrode layer 51, an electron transport layer may also be provided between the quantum dot film layer 2 and the second electrode layer 52, and a hole injection layer may also be provided between the electron transport layer and the second electrode layer 52.

[0090] An embodiment of the present invention further provides a display device, comprising the quantum dot light-emitting device provided by the embodiment of the present invention.

[0091] Based on the same inventive concept, the embodiment of the present invention provides a method for manufacturing a quantum dot light-emitting device as provided in the embodiment of the present invention, see Figure 6 As shown, including:

[0092] Step S100, providing a substrate;

[0093] Step S200, forming a quantum dot film of at least one light emitting color on one side of the base substrate, and irradiating the film with light of a first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern parts;

[0094] Step S300: irradiating all pattern parts with light of the second wavelength band to de-crosslink all pattern parts.

[0095] In a possible implementation, the patterning of the quantum dot film layer can be achieved by cross-linking different ligands inside the quantum dot film layer. Specifically, regarding step 200, a quantum dot film of at least one light-emitting color is formed on one side of the substrate, and is irradiated with light of a first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern parts, including:

[0096] A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of the first wavelength band so that different ligands in the quantum dot film in the irradiated area are cross-linked to form a plurality of pattern parts.

[0097] In a possible implementation, the patterning of the quantum dot film layer can also be achieved by cross-linking the first ligand of the quantum dot film layer with the second ligand of the functional layer. For details, see Figure 7 As shown, before step S200, before forming a quantum dot film of at least one light-emitting color on one side of the substrate, the manufacturing method further includes: step S400, forming a functional layer on one side of the substrate, wherein the functional layer is connected to a siloxane body on a side away from the substrate, and a second ligand connected to the siloxane body;

[0098] Correspondingly, with respect to step S200, a quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of the first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern portions, including: a quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of the first wavelength band so that the ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern portions.

[0099] In a possible implementation, when forming pattern portions of different light emitting colors, each time a quantum dot film of a light emitting color is formed, light of the first wavelength band is used for irradiation once to form the pattern portion of the light emitting color. Specifically, regarding step S400, forming a functional layer on one side of the base substrate includes: forming a functional layer of the same second ligand corresponding to the pattern portions of different light emitting colors on one side of the base substrate;

[0100] Correspondingly, regarding step S200, a quantum dot film of at least one light emitting color is formed on one side of the substrate, and a first-band light is irradiated to cross-link the first ligand of the quantum dot film in the irradiated area with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including: when forming each quantum dot film of light emitting color, the first-band light is irradiated through the shielding of the mask plate to cross-link the first ligand of the quantum dot film in the irradiated area with the second ligand of the functional layer in the corresponding area, and the quantum dot film that is not cross-linked is removed to form a plurality of pattern parts of a light emitting color;

[0101] Repeat the above steps for multiple times to form pattern parts with multiple light-emitting colors.

[0102] In a possible implementation, when forming pattern portions of different light emitting colors, a quantum dot film layer containing multiple light emitting colors may be formed at one time, and the pattern portions having multiple different light emitting colors may be formed by irradiating light of the first wavelength band at one time. Specifically, in step S400, forming a functional layer on one side of the base substrate includes: forming a functional layer having different second ligands corresponding to the pattern portions of different light emitting colors on one side of the base substrate;

[0103] A quantum dot film of at least one light-emitting color is formed on one side of the substrate, and is irradiated with light of a first wavelength band so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including:

[0104] Forming a variety of quantum dot films with different light emission colors;

[0105] Through a first wavelength band light irradiation, the second ligands of the functional layer in different regions are cross-linked with the ligands of the quantum dot film in the corresponding region;

[0106] The quantum dot film that has not been cross-linked is removed to form a plurality of pattern parts.

[0107] In order to more clearly understand the method for manufacturing the quantum dot light-emitting device provided by the embodiment of the present invention, the following is further described in detail as follows:

[0108] Example 1: Combination Figure 8 As shown:

[0109] Step 1: deposit a red quantum dot film RQD that emits red light, and irradiate it with a first wavelength of 300nm to 350nm (for example, specifically 300nm light) under the cover of a mask plate, so that different first ligands inside the quantum dot film in the illuminated area are cross-linked, such as Fig. 9 As shown, after that, cleaning is performed, and the quantum dot film is not easily removed in the cross-linked area during the cleaning process, and is not irradiated, so that the quantum dot film is removed in the area where no cross-linking occurs, thereby realizing the patterning of the red quantum dot film RQD;

[0110] Step 2: deposit a green quantum dot film GQD that emits green light, and irradiate with 300nm light under the cover of a mask plate to cross-link different first ligands inside the quantum dot film in the illuminated area, and then wash it. During the washing process, the quantum dot film in the cross-linked area is not easily removed, and the quantum dot film in the area that is not illuminated and thus not cross-linked is removed, thereby achieving patterning of the green quantum dot film GQD;

[0111] Step 3: Deposit a blue quantum dot film BQD that emits blue light, and irradiate with 300nm light under the cover of a mask plate to crosslink different first ligands inside the quantum dot film in the illuminated area, and then wash it. During the washing process, the quantum dot film in the crosslinked area is not easily removed, and the quantum dot film in the area that is not illuminated and thus not crosslinked is removed, thereby achieving patterning of the blue quantum dot film BQD;

[0112] Step 4: Use light of a second wavelength band of 250nm to 260nm (specifically, for example, light of 254nm) to irradiate the entirety of the quantum dots to restore their original structure.

[0113] Embodiment 2, combined Fig.10 As shown, the cross-linking and de-cross-linking reactions are carried out through the action of the first ligand of the quantum dots and the second ligand of the functional layer 3;

[0114] Step 1: forming a siloxane body having a second ligand (the second ligand may be the same as the first ligand Y of the quantum dot film layer) at the end thereof on the side of the functional layer (specifically, the electron transport layer ET) away from the substrate (base);

[0115] Step 2: coating a quantum dot film, wherein the quantum dot film also contains a first ligand Y at the end;

[0116] Step 3: Use a mask with a certain pattern and irradiate with 300nm light to make the second ligand of the functional layer in the illuminated area cross-link with the first ligand of the quantum dot film;

[0117] Step 4: washing away the quantum dot film that has not been cross-linked with a solvent to form a pattern;

[0118] Step 5, repeating steps 2 to 4 to form quantum dots of desired colors in the remaining sub-pixels;

[0119] Step 6: After all the quantum dot film layers are patterned, 254 nm light is used for irradiation to decrosslink the cross-linked YY structure and restore the original structure.

[0120] Embodiment 3, as Fig.11 As shown, the first ligands of red, green and blue quantum dots respectively use systems containing Y1, Y2 and Y3, and specifically bind to the second ligand sites containing Y1, Y2 and Y3 in the functional layer, respectively, to form red, green and blue patterned quantum dots at one time;

[0121] Step 1: using inkjet printing or other patterning methods to form a self-assembled monolayer on the side of the functional layer (specifically, the electron transport layer ET) in the red, green, and blue sub-pixels away from the substrate, wherein the self-assembled monolayer comprises a siloxane chain, and the ends contain Y1, Y2, and Y3 groups, respectively; specifically, the method of depositing different self-assembled monolayers in different sub-pixels of the functional layer can be: Step 1: applying a layer of photoresist, exposing the red sub-pixel area after exposure and development, and the blue and green sub-pixel areas are still covered by the photoresist, applying a siloxane chain solution containing the Y1 group, and after it is combined with the substrate to form the desired self-assembled monolayer, the photoresist is peeled off; Step 2: repeating step 1, and depositing the self-assembled monolayer containing the Y2 and Y3 groups in the green and blue sub-pixels, respectively;

[0122] Step 2: Apply red, green and blue quantum dots at one time. Specifically, quantum dots of different light-emitting colors can be directly mixed together; the first ligands of red, green and blue quantum dots are respectively composed of systems containing Y1, Y2 and Y3;

[0123] Step 3: Irradiate with light of the first wavelength of 300 nm, so that only the Y1-Y1, Y2-Y2, and Y3-Y3 ends are cross-linked in the red, green, and blue sub-pixel regions, respectively, so that only the green and blue quantum dots are combined with the functional layer in the red, green, and blue sub-pixels;

[0124] Step 4: Washing away the uncrosslinked quantum dots in the pixels with a solvent to form a pattern;

[0125] Step 5: After all the quantum dots are patterned, 254nm light is irradiated to decrosslink the cross-linked structure and restore the original structure.

[0126] The beneficial effects of the embodiments of the present invention are as follows: the quantum dot material provided by the embodiments of the present invention, wherein the first ligand is a reversible photoresponsive cross-linking system, can be cross-linked when irradiated with light in the first band, and can be de-cross-linked when irradiated with light in the second band, and then when a patterned quantum dot film layer is formed by the quantum dot material provided by the embodiments of the present invention, during the patterning process, the irradiated area can be cross-linked by irradiating with light in the first band, and is not easily removed in the subsequent cleaning process, while the quantum dot material in the non-cross-linked area can be removed during the cleaning process to achieve patterning of the quantum dot film layer. After patterning, the cross-linked area can be de-cross-linked by irradiating with light in the second band, and then while achieving patterning of the quantum dot film layer, the influence of the cross-linked structure on the carrier transport performance can be avoided, thereby improving the problems in the prior art of carrier transport obstruction, reduced device electrical performance, and reduced luminous efficiency after patterning the quantum dot film layer.

[0127] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A quantum dot light-emitting device, characterized in that: include: A base substrate, a quantum dot film layer located on one side of the base substrate and having a plurality of pattern parts; wherein the pattern part comprises: a quantum dot body, a connector, and a first ligand; one end of the connector is connected to the quantum dot body, and the other end is connected to the first ligand; the first ligand comprises one or a combination of the following: Wherein, R includes one or a combination of the following: Alkyl chain; Aromatic rings; Heterocyclic ring; The pattern portion is formed by: The first ligands in the pattern part are cross-linked by different first ligands in the pattern part when irradiated with light of a first wavelength band, and are de-cross-linked when irradiated with light of a second wavelength band; Alternatively, there is also a functional layer between the base substrate and the quantum dot film layer; the side of the functional layer facing the quantum dot film layer is connected to a siloxane body and a second ligand connected to the siloxane body; the first ligand of the pattern portion is the same as the second ligand of the corresponding area, and the first ligand of the pattern portion is cross-linked with the second ligand of the corresponding area when irradiated with light in the first band, and is de-cross-linked when irradiated with light in the second band.

2. The quantum dot light emitting device according to claim 1, characterized in that: The connector includes a first connecting structure and a second connecting structure; one end of the first connecting structure is connected to the quantum dot body, and the other end is connected to one end of the second connecting structure; the other end of the second connecting structure is connected to the first ligand.

3. The quantum dot light emitting device according to claim 2, characterized in that: The first connection structure includes one of the following: -SH; -COOH; -NH2.

4. The quantum dot light emitting device according to claim 2, characterized in that: The second linking structure includes an alkyl chain.

5. The quantum dot light-emitting device according to any one of claims 1 to 3, characterized in that: The quantum dot light-emitting device comprises at least two pattern parts with different light emission colors, the first ligands of all the pattern parts are the same, and all the second ligands of the functional layer are the same.

6. The quantum dot light-emitting device according to any one of claims 1 to 3, characterized in that: The quantum dot light-emitting device comprises at least two pattern parts with different light emission colors, the first ligands of the pattern parts with the same light emission color are the same, and the first ligands of the pattern parts with different light emission colors are different.

7. The quantum dot light-emitting device according to any one of claims 1 to 3, characterized in that: A first electrode layer is disposed between the substrate and the functional layer, and a second electrode layer is disposed on a side of the quantum dot film layer away from the functional layer.

8. A display device, characterized in that: A quantum dot light-emitting device comprising the device described in any one of claims 1 to 7.

9. A method for manufacturing a quantum dot light-emitting device according to any one of claims 1 to 7, characterized in that: include: Providing a substrate; A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and irradiated with light of a first wavelength band so that the irradiated area is cross-linked to form a plurality of pattern parts; The second wavelength band light is used to irradiate all the pattern parts, so that all the pattern parts are de-crosslinked.

10. The manufacturing method according to claim 9, characterized in that: The method comprises forming a quantum dot film of at least one light-emitting color on one side of the base substrate, and irradiating the first wavelength band light to cross-link the irradiated area to form a plurality of pattern parts, including: A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of a first wavelength band so that different first ligands in the quantum dot film in the irradiated area are cross-linked to form a plurality of pattern parts.

11. The method according to claim 9, characterized in that: Before forming a quantum dot film of at least one light-emitting color on one side of the substrate, the manufacturing method further comprises: forming a functional layer on one side of the substrate, wherein the functional layer is connected to a siloxane body and a second ligand connected to the siloxane body on a side away from the substrate; The method comprises forming a quantum dot film of at least one light-emitting color on one side of the base substrate, and irradiating the first wavelength band light to cross-link the irradiated area to form a plurality of pattern parts, including: A quantum dot film of at least one light-emitting color is formed on one side of the base substrate, and is irradiated with light of a first wavelength band so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern portions.

12. The method according to claim 11, characterized in that: The forming of the functional layer on one side of the base substrate comprises: forming a functional layer having the same second ligand as the pattern portions of different light emitting colors on one side of the base substrate; The method comprises forming a quantum dot film of at least one light emitting color on one side of the base substrate, and irradiating the first wavelength band light so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including: When forming the quantum dot film of each light emitting color, the first wavelength band light is used for irradiation through the shielding of the mask plate, so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area, and the quantum dot film that is not cross-linked is removed to form a plurality of pattern parts of one light emitting color; The above steps are repeated multiple times to form the pattern portion with multiple light emitting colors.

13. The method according to claim 11, characterized in that: The forming of the functional layer on one side of the base substrate comprises: forming a functional layer having different second ligands corresponding to pattern portions of different light emitting colors on one side of the base substrate; The method comprises forming a quantum dot film of at least one light emitting color on one side of the base substrate, and irradiating the first wavelength band light so that the first ligand of the quantum dot film in the irradiated area is cross-linked with the second ligand of the functional layer in the corresponding area to form a plurality of pattern parts, including: Forming a variety of quantum dot films with different light emission colors; Irradiating the functional layer in different regions with the first ligand in the quantum dot film in corresponding regions by the first wavelength band light once; The quantum dot film that has not been cross-linked is removed to form a plurality of pattern parts.

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