A bias voltage generation circuit for a non-cooled infrared detector

Abstract

The present invention discloses a bias voltage generation circuit for a non-cooled infrared detector, which includes: a low-dropout linear regulator whose root mean square noise is less than that of the non-cooled infrared detector; a filter network whose input terminal is connected to the voltage output terminal of the low-dropout linear regulator for filtering noise; and a plurality of resistor voltage division networks whose input terminals are connected to the output terminal of the filter network, and whose output terminals are connected to the small load current bias input terminal of the non-cooled infrared detector for providing the generated small load current bias to the non-cooled infrared detector. The bias voltage generation circuit for the non-cooled infrared detector of the present invention has a simple design, can meet the low-noise requirement, is convenient for miniaturization and saves device costs.

Description

Technical Field

[0001] The present invention relates to the technical field of uncooled infrared detectors, and particularly to a bias voltage generation circuit for an uncooled infrared detector. Background Art

[0002] At present, uncooled infrared detectors are increasingly widely used in military and civilian fields due to their advantages of low cost and easy miniaturization. However, uncooled infrared detectors themselves also have deficiencies such as low sensitivity, multiple types of bias voltages, and the driving circuit being sensitive to noise. In the design of the driving circuit for uncooled infrared detectors, attention should be paid to the design of the analog voltage and bias voltage circuit of the detector. Generally, the bias voltage requires a low noise level and stability, and its performance directly determines the quality of the output signal and imaging performance of the detector.

[0003] In order to meet the requirements of the driving voltage of infrared detectors, many existing patent documents have proposed optimized solutions. In "A Bias Voltage Generation Circuit for an Uncooled Infrared Detector" (Application No.: 201410475438.5), a circuit with low noise, simple structure, and no need to change the bias voltage is proposed; in "Precision Bias Voltage Regulation Device for Uncooled Infrared Detectors" (Application No.: 201510782959.X), a bias voltage with low noise, wide voltage, and high precision is proposed; in "A Low-Noise Numerically Controlled Bias Voltage Generation Circuit for Infrared Imaging Detectors" (Application No.: 200920005646.3), a new type of circuit with simple structure, flexible control, and real-time output of different voltages is proposed; in "A General Bias Voltage Device for Low-Noise Amorphous Silicon Uncooled Infrared Detectors" (Application No.: 201310239926.1), a hardware design of the bias voltage device without change is proposed.

[0004] The above circuits of the prior art all have their advantages, but also have disadvantages: the circuits all appear complex; a reference voltage source circuit is required, and the load capacity of general reference source chips is limited; an operational amplifier circuit is required, and the amplifier circuit also needs to be powered; for the bias voltage that needs to generate a large current, the above designs cannot meet the requirements, and the bias circuit design that meets the requirements is too complex, which is not conducive to the miniaturization of the infrared detector circuit, and at the same time, multiple devices are likely to bring more noise. Summary of the Invention

[0005] Technical problem to be solved

[0006] The present invention is proposed to solve the above problems, and its purpose is to provide a concise and low-noise bias voltage generation circuit for an uncooled infrared detector.

[0007] Technical solution

[0008] To achieve the above object of the invention, a bias voltage generation circuit for a non-cooled infrared detector according to the present invention may include: a low dropout linear regulator, the root mean square noise of which is less than the root mean square noise of the non-cooled infrared detector; a filter network, the input end of which is connected to the voltage output end of the low dropout linear regulator for filtering noise; and a plurality of resistor voltage dividing networks, the input ends of which are connected to the output end of the filter network, and the output ends of which are connected to the small load current bias input end of the non-cooled infrared detector for providing the generated small load current bias to the non-cooled infrared detector.

[0009] Preferably, the voltage output end of the low dropout linear regulator may be directly connected to the large load current bias input end of the non-cooled infrared detector for providing the large load current bias to the non-cooled infrared detector.

[0010] Preferably, the bias voltage generation circuit for the non-cooled infrared detector may further include a DA conversion chip with a built-in reference voltage, the power input end of which is connected to a separate power supply, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

[0011] Preferably, the bias voltage generation circuit for the non-cooled infrared detector may further include a DA conversion chip without a built-in reference voltage, the power input end of which is connected to a separate power supply, the reference voltage input end of which is connected to the output end of one of the plurality of resistor voltage dividing networks for obtaining a reference voltage from the one resistor voltage dividing network, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

[0012] Preferably, the bias voltage generation circuit for the non-cooled infrared detector may further include a DA conversion chip with a built-in reference voltage, the power input end of which is directly connected to the voltage output end of the low dropout linear regulator, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

[0013] Preferably, the bias voltage generation circuit of the uncooled infrared detector may further include a DA conversion chip without a built-in reference voltage. The power input terminal of the DA conversion chip is directly connected to the voltage output terminal of the low dropout linear regulator. The reference voltage input terminal of the DA conversion chip is connected to the output terminal of a certain resistor voltage division network among the multiple resistor voltage division networks to obtain a reference voltage from the certain resistor voltage division network. The output terminal of the DA conversion chip is connected to the adjustable current bias input terminal of the uncooled infrared detector to provide the generated adjustable current bias to the uncooled infrared detector.

[0014] Preferably, the filter network may adopt one or more of a π-type filter network, a T-type filter network, and an LC filter network.

[0015] Beneficial effects

[0016] The bias voltage generation circuit of the uncooled infrared detector according to the present invention is very concise. It can not only meet the low-noise requirements of the uncooled infrared detector, but also operate stably. At the same time, configurations such as operational amplifiers and corresponding power supply chips can be omitted, and the reference power supply chip can also be omitted, thus facilitating miniaturization and saving device costs. In addition, in the prior art, a large load current bias is generally provided by a separate power supply, while in the present invention, it can be directly provided by an LDO, and the LDO also provides a small load current bias, and the circuit is very concise. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is the bias voltage generation circuit of the uncooled infrared detector provided by the first embodiment of the present invention.

[0018] Figure 2 is the bias voltage generation circuit of the uncooled infrared detector provided by the second embodiment of the present invention.

[0019] Figure 3 is the bias voltage generation circuit of the uncooled infrared detector provided by the third embodiment of the present invention.

[0020] Figure 4 is the bias voltage generation circuit of the uncooled infrared detector provided by the fourth embodiment of the present invention.

[0021] Figure 5 is the bias voltage generation circuit of the uncooled infrared detector provided by the fifth embodiment of the present invention.

[0022] Figure 6 is the bias voltage generation circuit of the uncooled infrared detector provided by the sixth embodiment of the present invention.

[0023] Figure 7It is a bias voltage generation circuit for a non-cooled infrared detector provided according to the seventh embodiment of the present invention.

[0024] Figure 8 It is a bias voltage generation circuit for a non-cooled infrared detector provided according to the eighth embodiment of the present invention.

[0025] Figure 9 It is a bias voltage generation circuit for a non-cooled infrared detector provided according to the ninth embodiment of the present invention.

[0026] Figure 10 It is a bias voltage generation circuit for a non-cooled infrared detector provided according to the tenth embodiment of the present invention.

[0027] Figure 11 It is a bias voltage generation circuit for a non-cooled infrared detector provided according to the experimental example of the present invention.

[0028]

Description of Reference Numerals

[0029] 100: LDO 200: Filter network

[0030] 300: Multiple resistor voltage division networks 400: Non-cooled infrared detector

[0031] 500: DA conversion chip 600: Separate power supply Detailed Embodiment

[0032] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art to which the present invention pertains can easily understand the present invention.

[0033] Only the parts necessary for understanding the technical content of the present invention will be described herein, and the description of the remaining parts will be omitted to avoid confusion in the gist of the present invention. Attention should be paid to this. Moreover, during this process, for the sake of clarity and convenience of description, the thickness of the lines shown in the figures or the size of the components may be exaggerated. Also, when it is stated in this article that a certain component "includes", "comprises", or "has" another component, in the absence of special records, it does not exclude other components, but means that it can also include other components. Additionally, in this article, terms such as "first", "second", etc. are only used for the purpose of distinguishing one component from another, and without special mention, they do not limit the order or importance degree, etc. between the components. Therefore, within the scope of this application, the first component in one embodiment may be called the second component in another embodiment, and similarly, the second component in one embodiment may be called the first component in another embodiment.

[0034] Figure 1It is a bias voltage generation circuit of the uncooled infrared detector 400 provided according to the first embodiment of the present invention.

[0035] As Figure 1 shown, the bias voltage generation circuit of the uncooled infrared detector 400 according to the first embodiment of the present invention may include a Low Dropout Regulator (LDO) 100, a filter network 200, and a plurality of resistor voltage division networks 300.

[0036] Among them, the root mean square (RMS) noise of the low dropout linear regulator 100, that is, the LDO 100, is less than the RMS noise of the uncooled infrared detector 400, so that the LDO 100 can meet the noise requirements of the uncooled infrared detector 400. Thus, the circuit can be streamlined. Even if the circuit is simple, the LDO 100 can meet the noise requirements of the uncooled infrared detector 400. In the prior art, even if an LDO or a low-noise LDO is used, due to design reasons, the circuit structure is relatively complex.

[0037] The filter network 200 is respectively connected to the LDO 100 and the plurality of resistor voltage division networks 300. Specifically, the input end of the filter network 200 is connected to the voltage output end of the LDO 100 for filtering noise. The output end of the filter network 200 is connected to the input ends of the plurality of resistor voltage division networks 300. Here, the filter network 200 can adopt a well-known filter network, such as a π-type filter network, a T-type filter network, an LC filter network, etc.

[0038] The plurality of resistor voltage division networks 300 may include n resistor voltage division networks. Here, n may be a natural number greater than or equal to 1, such as natural numbers 1, 2, 3, 4, 5, etc., and the quantity can be set according to the actual needs of the circuit. The output ends of the plurality of resistor voltage division networks 300 are connected to the small load current bias input end of the uncooled infrared detector 400, thereby providing the generated small load current bias to the uncooled infrared detector 400.

[0039] Figure 2 It is a bias voltage generation circuit of the uncooled infrared detector 400 provided according to the second embodiment of the present invention.

[0040] As Figure 2 shown, the bias voltage generation circuit of the uncooled infrared detector 400 according to the second embodiment of the present invention may include an LDO 100, a filter network 200, and a plurality of resistor voltage division networks 300.

[0041] Among them, the RMS noise of the LDO100 is less than the RMS noise of the uncooled infrared detector 400, so that the LDO100 can meet the noise requirements of the uncooled infrared detector 400. Thus, the circuit can be simplified. Even if the circuit is simple, the LDO100 can meet the noise requirements of the uncooled infrared detector 400. In the prior art, even if an LDO or a low-noise LDO is used, due to design reasons, the circuit structure is relatively complex.

[0042] The filter network 200 is respectively connected to the LDO100 and multiple resistor voltage-dividing networks 300. Specifically, the input end of the filter network 200 is connected to the voltage output end of the LDO100 for filtering noise. The output end of the filter network 200 is connected to the input ends of the multiple resistor voltage-dividing networks 300. Here, the filter network 200 can adopt a well-known filter network, such as a π-type filter network, a T-type filter network, an LC filter network, etc.

[0043] The multiple resistor voltage-dividing networks 300 may include n resistor voltage-dividing networks. Here, n may be a natural number greater than or equal to 1, such as natural numbers 1, 2, 3, 4, 5, etc., and the quantity can be set according to the actual needs of the circuit. The output ends of the multiple resistor voltage-dividing networks 300 are connected to the small-load current bias input end of the uncooled infrared detector 400, so as to provide the generated small-load current bias to the uncooled infrared detector 400.

[0044] Moreover, according to the needs of the uncooled infrared detector 400, the voltage output end of the LDO100 can be directly connected to the large-load current bias input end of the uncooled infrared detector 400 to provide the large-load current bias to the uncooled infrared detector 400. In the prior art, if the uncooled infrared detector has a large-load current bias requirement, it must be realized through an operational amplifier or by carrying other complex power supplies. In this embodiment, the large-load current bias is directly provided by the LDO100, and at the same time, the small-load current bias is provided, and the circuit is simplified.

[0045] Figure 3 It is a bias voltage generation circuit of the uncooled infrared detector 400 provided according to the third embodiment of the present invention.

[0046] Compared with the first embodiment, the bias voltage generation circuit of the uncooled infrared detector in the third embodiment may further include a DA conversion chip 500 with a built-in reference voltage according to the needs of the uncooled infrared detector 400. The power input end of the DA conversion chip 500 is connected to a separate power supply 600, and the output end of the DA conversion chip 500 is connected to the adjustable current bias input end of the uncooled infrared detector 400 to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0047] Figure 4 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the fourth embodiment of the present invention.

[0048] Compared with the second embodiment, the bias voltage generation circuit of the uncooled infrared detector in the fourth embodiment may further include a DA conversion chip 500 with a built-in reference voltage according to the requirements of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to a separate power supply 600, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0049] Figure 5 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the fifth embodiment of the present invention.

[0050] Compared with the first embodiment, the bias voltage generation circuit of the uncooled infrared detector in the fifth embodiment may further include a DA conversion chip 500 without a built-in reference voltage according to the requirements of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to a separate power supply 600, and the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of a certain resistor voltage division network among the multiple resistor voltage division networks 300 ( Figure 5 schematically shown as being connected to the output terminal of the nth resistor voltage division network in the figure), so as to obtain a reference voltage from the resistor voltage division network 300. The output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0051] Figure 6 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the sixth embodiment of the present invention.

[0052] Compared with the second embodiment, the bias voltage generation circuit of the uncooled infrared detector in the sixth embodiment may further include a DA conversion chip 500 without a built-in reference voltage according to the requirements of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to a separate power supply 600, and the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of a certain resistor voltage division network among the multiple resistor voltage division networks 300 ( Figure 6 schematically shown as being connected to the output terminal of the nth resistor voltage division network in the figure), so as to obtain a reference voltage from the resistor voltage division network 300. The output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0053] Figure 7 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the seventh embodiment of the present invention.

[0054] Compared with the first embodiment, the bias voltage generation circuit of the uncooled infrared detector in the seventh embodiment may further include a DA conversion chip 500 with a built-in reference voltage according to the needs of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO 100, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0055] As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is relatively not concise enough. If a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In this embodiment, the low-noise LDO 100 is used to power the DA conversion chip 500 at the same time, so the interference to the circuit of the DA conversion chip 500 is small, and the circuit is very concise at the same time.

[0056] Figure 8 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the eighth embodiment of the present invention.

[0057] Compared with the second embodiment, the bias voltage generation circuit of the uncooled infrared detector in the eighth embodiment may further include a DA conversion chip 500 with a built-in reference voltage according to the needs of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO 100, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.

[0058] As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is relatively not concise enough. If a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In this embodiment, the low-noise LDO 100 is used to power the DA conversion chip 500 at the same time, so the interference to the circuit of the DA conversion chip 500 is small, and the circuit is very concise at the same time.

[0059] Figure 9 It is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the ninth embodiment of the present invention.

[0060] Compared with the first embodiment, the bias voltage generation circuit of the uncooled infrared detector in the ninth embodiment may further include a DA conversion chip 500 without a built-in reference voltage according to the requirements of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO 100, and the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of a certain resistor voltage division network among the multiple resistor voltage division networks 300 ( Figure 9 schematically shown as being connected to the output terminal of the nth resistor voltage division network) for obtaining a reference voltage from the resistor voltage division network 300. The output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.

[0061] As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is relatively not concise enough. If a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In this embodiment, the low-noise LDO 100 is used to power the DA conversion chip 500 at the same time, so the interference to the circuit of the DA conversion chip 500 is small, and the circuit is very concise.

[0062] Figure 10 This is the bias voltage generation circuit of the uncooled infrared detector 400 provided according to the tenth embodiment of the present invention.

[0063] Compared with the second embodiment, the bias voltage generation circuit of the uncooled infrared detector in the tenth embodiment may further include a DA conversion chip 500 without a built-in reference voltage according to the requirements of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO 100, and the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of a certain resistor voltage division network among the multiple resistor voltage division networks 300 ( Figure 10 schematically shown as being connected to the output terminal of the nth resistor voltage division network) for obtaining a reference voltage from the resistor voltage division network 300. The output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.

[0064] As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is relatively not concise enough. If a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In this embodiment, the low-noise LDO 100 is used to power the DA conversion chip 500 at the same time, so the interference to the circuit of the DA conversion chip 500 is small, and the circuit is very concise.

[0065] The following describes an experimental example of the present invention (with the same principle as the second embodiment) with reference to Figure 11 For example.

[0066] Figure 11 The bias voltage generation circuit of the uncooled infrared detector provided according to the experimental example of the present invention.

[0067] In this experimental example, the uncooled infrared detector selects GWSP_02_02_X1AF of Beijing Guangwei Jidian Co., Ltd. The bias voltage part of GWSP_02_02_X1AF includes fixed bias voltages VSK, VEB, and VREF. The following Table 1 shows the bias voltage requirements of GWSP_02_02_X1AF, and it can be seen that it has certain requirements for accuracy and noise. Among them, the current of the VSK bias voltage is relatively large.

[0068] Table 1: Voltage parameters of GWSP_02_02_X1AF

[0069]

[0070] For a general ordinary reference voltage chip, such as the commonly used LTC6655, its output short-circuit current is only 20 mA, which cannot meet the requirements of GWSP_02_02_X1AF. The patent documents mentioned in the foregoing part are generally applicable to bias voltage designs with a maximum current of several mA (less than 10 mA, generally 1 - 2 mA), and are not applicable to large-load current bias voltages in experimental examples like this one. To meet the requirements of this experimental example, the circuit design will necessarily be more complex.

[0071] In this experimental example, an ultra-low-noise LDO is selected. The RMS noise of this LDO must be small enough, that is, it must be less than the RMS noise requirement of the bias voltage of GWSP_02_02_X1AF. For example, the LDO that can be selected in this experimental example has an output noise peak less than or equal to 0.8 μV (10 Hz to 100 Hz) in the frequency range of 10 Hz to 100 Hz, and at the same time its output current reaches 200 mA. Of course, a low-noise LDO with an output current reaching 50 mA, 100 mA, etc. can also be selected, and the specific current value can be selected according to the large current requirements of the detector.

[0072] According to the design requirements of GWSP_02_02_X1AF, directly connect the voltage output terminal of the LDO to the VSK pin of GWSP_02_02_X1AF, so as to generate a 5.6V bias voltage (the bias voltage required by the VSK pin) and input it to the VSK pin of GWSP_02_02_X1AF, and this voltage meets the current and RMS noise requirements. At the same time, connect the voltage output terminal of the LDO to the input terminal of the filter network (a simple π-type filter network can be used), and connect the output terminal of the filter network to two resistor voltage divider networks, namely the first resistor voltage divider network and the second resistor voltage divider network, so that the bias voltage generated by the first resistor voltage divider network is input to the VEB pin of GWSP_02_02_X1AF, and the bias voltage generated by the second resistor voltage divider network is input to the VREF pin of GWSP_02_02_X1AF.

[0073] The above design is very concise and can fully meet the low-noise requirements of GWSP_02_02_X1AF, which is convenient for miniaturization and saving device costs.

[0074] The scope of the claims of the present invention is not limited to the above specific embodiments. Various other embodiments that can be modified or changed by those of ordinary skill in the art within the scope not departing from the gist of the technical idea of the present invention described in the claims should also be included in the scope of the claims of the present invention.

Claims

1. A bias voltage generation circuit for a non-cooled infrared detector, characterized in that it includes: A low-dropout linear regulator, the root mean square noise of which is less than the root mean square noise of the non-cooled infrared detector; A filter network, the input end of which is connected to the voltage output end of the low-dropout linear regulator for filtering noise; and Multiple resistor voltage dividing networks, the input ends of which are connected to the output end of the filter network, and the output ends of which are connected to the small load current bias input end of the non-cooled infrared detector for providing the generated small load current bias to the non-cooled infrared detector.

2. The bias voltage generation circuit for a non-cooled infrared detector according to claim 1, characterized in that The voltage output end of the low-dropout linear regulator is directly connected to the large load current bias input end of the non-cooled infrared detector for providing the large load current bias to the non-cooled infrared detector.

3. The bias voltage generation circuit for a non-cooled infrared detector according to claim 1 or 2, characterized in that It further includes a DA conversion chip with a built-in reference voltage, the power input end of which is connected to a separate power supply, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

4. The bias voltage generation circuit for a non-cooled infrared detector according to claim 1 or 2, characterized in that It further includes a DA conversion chip without a built-in reference voltage, the power input end of which is connected to a separate power supply, the reference voltage input end of which is connected to the output end of a certain resistor voltage dividing network among the multiple resistor voltage dividing networks for obtaining a reference voltage from the certain resistor voltage dividing network, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

5. The bias voltage generation circuit for a non-cooled infrared detector according to claim 1 or 2, characterized in that It further includes a DA conversion chip with a built-in reference voltage, the power input end of which is directly connected to the voltage output end of the low-dropout linear regulator, and the output end of which is connected to the adjustable current bias input end of the non-cooled infrared detector for providing the generated adjustable current bias to the non-cooled infrared detector.

6. The bias voltage generation circuit for a non-cooled infrared detector according to claim 1 or 2, characterized in that It further includes a DA conversion chip without a built-in reference voltage. The power input terminal of the DA conversion chip is directly connected to the voltage output terminal of the low-dropout linear regulator. The reference voltage input terminal of the DA conversion chip is connected to the output terminal of one of the multiple resistor voltage division networks to obtain a reference voltage from the one resistor voltage division network. The output terminal of the DA conversion chip is connected to the adjustable current bias input terminal of the uncooled infrared detector to provide the generated adjustable current bias to the uncooled infrared detector.

7. The bias voltage generation circuit for an uncooled infrared detector according to claim 1 or 2, wherein, the filtering network adopts one or more of a π-type filtering network, a T-type filtering network, and an LC filtering network.

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