Resistor assembly

Abstract

The present application provides a resistor assembly including an insulating substrate having one surface and another surface and one end surface and another end surface, a slot portion provided on the one end surface and the another end surface and extending to the one surface and the another surface, a resistor layer provided on the one surface, and a first terminal and a second terminal connected to the resistor layer. Each of the first terminal and the second terminal includes an inner electrode layer including an upper electrode provided on the one surface, a lower electrode provided on the another surface, and a slot electrode provided on an inner wall of the slot portion, and an outer electrode layer provided on the one end surface, the another end surface, and the inner wall of the slot portion, in contact with the slot electrode, and having a thickness smaller than a thickness of the inner electrode layer.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2019-0165450, filed on December 12, 2019, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] This disclosure relates to a resistor assembly. Background Technology

[0003] A resistor assembly is a passive electronic component used to realize precision resistors. Resistor assemblies can adjust current and increase or decrease voltage in electronic circuits.

[0004] As electronic devices have been designed with reduced size and precision, the size of the electronic circuits used in them has decreased, and so has the size of resistor assemblies. Recently, various measures have been proposed to reduce the number of manufacturing processes in order to reduce the cost and time required to produce resistor assemblies. Summary of the Invention

[0005] One aspect of this disclosure is to provide a resistor assembly that has improved bonding reliability with a mounting substrate.

[0006] Another aspect of this disclosure is to provide a resistor assembly that can improve the efficiency of the manufacturing process.

[0007] According to one aspect of this disclosure, a resistor assembly includes: an insulating substrate having one surface and another surface opposite to each other, and one end surface and another end surface connecting and opposing each other to the one surface and the other surface; a slot portion disposed on the one end surface and the other end surface of the insulating substrate and extending to the one surface and the other surface of the insulating substrate; a resistor layer disposed on the one surface of the insulating substrate; and a first terminal and a second terminal connected to the resistor layer. Each of the first terminal and the second terminal includes: an inner electrode layer including an upper electrode disposed on the one surface of the insulating substrate, a lower electrode disposed on the other surface of the insulating substrate, and a slot electrode disposed on the inner wall of the slot portion and connecting the upper electrode and the lower electrode to each other; and an outer electrode layer disposed on the one end surface of the insulating substrate, the other end surface of the insulating substrate, and the inner wall of the slot portion, in contact with the slot electrode, and having a thickness smaller than the thickness of the inner electrode layer.

[0008] According to one aspect of this disclosure, a resistor assembly includes: an insulating substrate having one surface and another surface opposite to each other, and one end surface and another end surface connecting the one surface and the other surface and opposite to each other; a slot portion disposed on the one end surface and the other end surface of the insulating substrate and extending to the one surface and the other surface of the insulating substrate; a resistor layer disposed on the one surface of the insulating substrate; and a first terminal and a second terminal connected to the resistor layer. Each of the first terminal and the second terminal includes: an inner electrode layer disposed on the one surface of the insulating substrate, the other surface of the insulating substrate, and an inner wall of the slot portion, exposing the one end surface and the other end surface of the insulating substrate, and comprising glass and a conductor; and an outer electrode layer in contact with the one end surface of the insulating substrate, the other end surface of the insulating substrate, and a portion of the inner electrode layer disposed on the inner wall of the slot portion, and comprising metal.

[0009] According to one aspect of this disclosure, a resistor assembly includes: an insulating substrate having one surface and another surface opposite to each other, and one end surface and another end surface connecting and opposing each other to the one surface and the other surface; a first slot portion and a second slot portion respectively disposed on the one end surface and the other end surface of the insulating substrate, and both extending to the one surface and the other surface of the insulating substrate; a resistor layer disposed on the one surface of the insulating substrate; and a first terminal and a second terminal respectively connected to the resistor layer. The first terminal includes: a first inner electrode layer including a first upper electrode disposed on the one surface of the insulating substrate, a first lower electrode disposed on the other surface of the insulating substrate, and a first slot electrode disposed on the inner wall of the first slot portion and connecting the first upper electrode and the first lower electrode to each other; and a first outer electrode layer disposed on the one end surface of the insulating substrate and covering the first slot electrode. The second terminal includes: a second inner electrode layer comprising a second upper electrode disposed on one surface of the insulating substrate, a second lower electrode disposed on the other surface of the insulating substrate, and a second slot electrode disposed on the inner wall of the second slot portion and connecting the second upper electrode and the second lower electrode to each other; and a second outer electrode layer disposed on the other end surface of the insulating substrate and covering the second slot electrode. Of the one surface, the other surface, and the one end surface of the insulating substrate, the first outer electrode layer is disposed only on the one end surface of the insulating substrate. Of the one surface, the other surface, and the other end surface of the insulating substrate, the second outer electrode layer is disposed only on the other end surface of the insulating substrate.

[0010] According to one aspect of this disclosure, a method of manufacturing a resistor assembly includes: preparing a substrate insulating substrate having one end surface and another end surface opposite to each other in a thickness direction; forming a plurality of through-holes through the one end surface and the other end surface in the substrate insulating substrate, the plurality of through-holes being arranged in rows and columns; forming a first conductive layer along the row-arranged through-holes on the one end surface and the other end surface of the substrate insulating substrate and on the inner walls of the plurality of through-holes; forming a resistor layer connected to the first conductive layer on the one end surface of the substrate insulating substrate between the multiple rows of the first conductive layers; dividing the substrate insulating substrate into a plurality of strip substrates along a dividing line connecting the row-arranged through-holes to each other, and stacking the plurality of strip substrates to form a stack; disposing a second conductive layer on two end surfaces of the stack in a direction perpendicular to the dividing line; and cutting the stack in the direction perpendicular to the dividing line to form a single resistor assembly. Attached Figure Description

[0011] The above and other aspects, features, and advantages of this disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0012] Figure 1 and Figure 2 This is a diagram illustrating a resistor assembly according to an exemplary embodiment of the present disclosure;

[0013] Figure 3 This is a diagram illustrating an insulating substrate applied to a resistor assembly according to an exemplary embodiment of the present disclosure;

[0014] Figure 4 It is along Figure 1 A cross-sectional view taken from line I-I' in the diagram;

[0015] Figure 5 It is along Figure 1 The cross-sectional view taken from line II-II' in the middle; and

[0016] Figures 6 to 12 This is a diagram illustrating a method of manufacturing a resistor assembly according to an exemplary embodiment of the present disclosure. Detailed Implementation

[0017] In the following description, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0018] The terminology used in the exemplary embodiments is for the purpose of simply describing the exemplary embodiments and is not intended to limit this disclosure. Unless otherwise stated, singular terms include plural forms. The terms "comprising," "including," "constructed as," etc., in the specification are used to indicate the presence of features, quantities, steps, operations, elements, components, or combinations thereof, but do not exclude the possibility of combining or adding one or more other features, quantities, steps, operations, elements, components, or combinations thereof. Additionally, the terms "set on," "located on," etc., may indicate that an element is located above or below an object, and do not necessarily mean that the element is located above the object relative to the direction of gravity.

[0019] The terms “integrated into” and “combined into” can indicate not only that elements are in direct and physical contact with each other, but also that the elements are in contact with other elements in a configuration where other elements are located between the elements.

[0020] The dimensions and thicknesses of the elements shown in the accompanying drawings are illustrated by way of example for ease of description, and the exemplary embodiments in this disclosure are not limited thereto.

[0021] Values ​​for parameters used to describe elements, such as 1-D dimensions (including but not limited to "length", "width", "thickness", "diameter", "distance", "spacing" and / or "size"), 2-D dimensions (including but not limited to "area" and / or "size"), 3-D dimensions (including but not limited to "volume" and / or "size"), and properties of elements (including but not limited to "roughness", "density", "weight", "weight ratio" and / or "molar ratio"), can be obtained by the methods and / or tools described in this disclosure. However, this disclosure is not limited thereto. Other methods and / or tools, as understood by those skilled in the art, may be used even if not described in this disclosure.

[0022] In the attached figures, the W direction is the first direction or width direction, the L direction is the second direction or length direction, and the T direction is the third direction or thickness direction.

[0023] In the description with reference to the accompanying drawings, the same reference numerals will be used to describe elements that are the same or corresponding to each other, and repeated descriptions will not be repeated.

[0024] Figure 1 and Figure 2 This is a diagram illustrating a resistor assembly according to an example embodiment. Figure 3 This is a diagram illustrating an insulating substrate applied to a resistor assembly according to an example embodiment. Figure 4 It is along Figure 1 The cross-sectional view taken from line I-I' in the diagram. Figure 5 It is along Figure 1 The cross-sectional view taken from line II-II' in the diagram. For ease of description, Figure 2 It shows that it does not include Figure 1 A resistor assembly that is a part of the components shown in the figure.

[0025] Reference Figures 1 to 5 The resistor assembly 1000 in the example embodiment may include an insulating substrate 100, slots S1 and S2, a resistor layer 200, and a first terminal 300 and a second terminal 400.

[0026] Reference Figure 3 The insulating substrate 100 may have a surface 101 and another surface 102 that are opposite to each other, and an end surface 103 and another end surface 104 that connect the surface 101 and the other surface 102 to each other and are opposite to each other.

[0027] The insulating substrate 100 may be plate-shaped with a predetermined thickness and may include materials for effectively dissipating heat generated from the resistor layer 200. The insulating substrate 100 may include ceramic materials such as alumina (Al2O3), but exemplary embodiments thereof are not limited thereto. The insulating substrate 100 may include polymer materials. As an example, the insulating substrate 100 may be constructed as an alumina insulating substrate obtained by anodizing the surface of aluminum, but exemplary embodiments thereof are not limited thereto.

[0028] Reference Figure 3 The slot portions S1 and S2 may be formed on one end surface 103 and the other end surface 104 of the insulating substrate 100, respectively, and may extend to one surface 101 and the other surface 102 of the insulating substrate 100. For example, the first slot portion S1 may be provided on one end surface 103 of the insulating substrate 100, and the second slot portion S2 may be provided on the other end surface 104 of the insulating substrate 100. The two ends of each of the slot portions S1 and S2 may extend to one surface 101 and the other surface 102 of the insulating substrate 100, respectively. The inner walls of the slot portions S1 and S2 may be formed on a portion of one end surface 103 and a portion of the other end surface 104 of the insulating substrate 100, respectively; however, in the following description, for ease of description, the inner walls of the slot portions S1 and S2 may be distinguished from one end surface 103 and the other end surface 104 of the insulating substrate 100.

[0029] The slot portions S1 and S2 can be respectively provided on the central portion of one end surface 103 and the other end surface 104 of the insulating substrate 100 in the width direction W. Since the slot portions S1 and S2 are respectively provided on the central portion of one end surface 103 and the other end surface 104 of the insulating substrate 100 in the width direction W, in the example embodiment, solder or the like used to mount the resistor assembly 1000 on the printed circuit board can be firmly bonded to the resistor assembly.

[0030] Each of the slot portions S1 and S2 may have a semi-circular shape based on its end surface parallel to one surface 101 of the insulating substrate 100. The slot portions S1 and S2 may be formed by machining through holes with circular end surfaces along a cutting line (the boundary between the unit substrates of the large unit substrate), and by cutting the large unit substrate along the cutting line to separate the multiple unit substrates. Therefore, the end surfaces of each of the slot portions S1 and S2 formed on one end surface 103 and the other end surface 104 of each unit substrate may have a semi-circular shape. However, exemplary embodiments thereof are not limited to this. The shapes of the slot portions S1 and S2 may vary depending on the end surfaces of the holes formed in the large unit substrate.

[0031] A resistor layer 200 may be disposed on one surface 101 of an insulating substrate 100. The resistor layer 200 may be connected to a first terminal 300 and a second terminal 400 disposed at two ends of the insulating substrate 100 in the longitudinal direction L, and may perform the function of a resistor assembly 1000. The resistor layer 200 may have regions overlapping with the first terminal 300 and the second terminal 400.

[0032] The resistor layer 200 may include metals, metal alloys, metal oxides, etc. In an example embodiment, the resistor layer 200 may include at least one of Cu-Ni based alloys, Ni-Cr based alloys, Ru oxides, Si oxides, and Mn based alloys. The resistor layer 200 may be formed by coating a conductive paste, including metals, metal alloys, metal oxides, etc., onto a surface 101 of an insulating substrate 100 using a screen printing method or the like, and then sintering the paste.

[0033] Figure 4 and Figure 5 An example embodiment is shown in which the resistor layer 200 may be disposed only on one surface 101 of the insulating substrate 100, but the example embodiment is not limited thereto. As an example, although not limited thereto, the resistor layer 200 may be disposed only on the other surface 102 of the insulating substrate 100, or may be disposed on both one surface 101 and the other surface 102 of the insulating substrate 100. In the latter case, the resistor layer disposed on one surface 101 of the insulating substrate 100 and the resistor layer disposed on the other surface 102 of the insulating substrate 100 may be connected to each other through a via through the insulating substrate 100, but the example embodiment is not limited thereto.

[0034] The first terminal 300 and the second terminal 400 may be disposed on the insulating substrate 100 and may be opposite to each other in the longitudinal direction L. The first terminal 300 and the second terminal 400 may be connected to the resistor layer 200.

[0035] The first terminal 300 and the second terminal 400 may include: inner electrode layers 310 and 410, including upper electrodes 311 and 411 disposed on one surface 101 of the insulating substrate 100, lower electrodes 312 and 412 disposed on another surface 102 of the insulating substrate 100, and slot electrodes 313 and 413 disposed on the inner walls of slot portions S1 and S2 and respectively connecting the upper electrodes 311 and 411 to the lower electrodes 312 and 412; and outer electrode layers 320 and 420, disposed on one end surface 103 of the insulating substrate 100, the other end surface 104 of the insulating substrate 100, and the inner walls of slot portions S1 and S2 to cover slot portions S1 and S2, and may each have a thickness smaller than the thickness of each of the inner electrode layers 310 and 410.

[0036] For example, the first terminal 300 may include: a first inner electrode layer 310, including a first upper electrode 311 disposed on one surface 101 of the insulating substrate 100, a first lower electrode 312 disposed on another surface 102 of the insulating substrate 100, and a first slot electrode 313 disposed on the inner wall of the first slot portion S1; and a first outer electrode layer 320 disposed on one end surface 103 of the insulating substrate 100 and the inner wall of the first slot portion S1. The second terminal 400 may include: a second inner electrode layer 410, including a second upper electrode 411 disposed on one surface 101 of the insulating substrate 100, a second lower electrode 412 disposed on another surface 102 of the insulating substrate 100, and a second slot electrode 413 disposed on the inner wall of the second slot portion S2; and a second outer electrode layer 420 disposed on the other end surface 104 of the insulating substrate 100 and the inner wall of the second slot portion S2. In one example, without considering the thickness of the first inner electrode layer 310 and the second inner electrode layer 410, the first outer electrode layer 320 and the second outer electrode layer 420 may be disposed only on one end surface 103 and the other end surface 104, respectively. In one example, the first outer electrode layer 320 and the second outer electrode layer 420 may not be disposed on one surface 101 of the insulating substrate 100, and the first outer electrode layer 320 and the second outer electrode layer 420 may not be formed on the other surface 102 of the insulating substrate 100. However, this disclosure is not limited thereto.

[0037] The inner electrode layers 310 and 410 can be formed by coating a conductive paste onto one surface 101 of the insulating substrate 100, the other surface 102 of the insulating substrate 100, and the inner walls of the slot portions S1 and S2, and then sintering the paste. Therefore, the first upper electrode 311, the first lower electrode 312, and the first slot electrode 313 included in the first inner electrode layer 310 can be integrated with each other along one surface 101 of the insulating substrate 100, the other surface 102 of the insulating substrate 100, and the inner wall of the slot portion S1. Furthermore, the second upper electrode 411, the second lower electrode 412, and the second slot electrode 413 included in the second inner electrode layer 410 can be integrated with each other along one surface 101 of the insulating substrate 100, the other surface 102 of the insulating substrate 100, and the inner wall of the second slot portion S2. The conductive paste used to form the inner electrode layers 310 and 410 may include metal powders such as copper (Cu), silver (Ag), and nickel (Ni), binders, and glass components. Therefore, the inner electrode layers 310 and 410 may include glass and metal components.

[0038] The thickness d1 of each of the inner electrode layers 310 and 410 can be greater than or equal to 3 μm and less than or equal to 6 μm. When the thickness d1 of each of the inner electrode layers 310 and 410 is less than 3 μm, it may be difficult to form slot electrodes 313 and 413 on the inner walls of the slot portions S1 and S2. When the thickness d1 of each of the inner electrode layers 310 and 410 exceeds 6 μm, the total thickness of each of the first terminal 300 and the second terminal 400 may increase, making it difficult to reduce the thickness of the component.

[0039] In one example, based on an optical micrograph of the length-thickness section (LT section) in the central portion of the resistor assembly 1000 in the width direction W, the thickness d1 of the inner electrode layer 310 can be represented as: when the normal in the length direction L originates from one surface of the insulating substrate 100 that contacts the inner electrode layer 310 (the inner electrode layer 310 is based on...). Figure 4 The distance from one point to another is the distance along a line segment corresponding to the left surface of the inner electrode layer 310 (where the normal to the line segment corresponds to the other surface of the inner electrode layer 310). The thickness d1 of the inner electrode layer 410 can be obtained similarly by the method used to obtain the thickness of the inner electrode layer 310.

[0040] Optionally, based on an optical micrograph of the length-thickness section (LT section) in the central portion of the resistor assembly 1000 in the width direction W, the thickness d1 of the inner electrode layer 310 can be represented as: when multiple normals respectively originate from one surface of the contact insulating substrate 100 with the inner electrode layer 310 (the inner electrode layer 310 is based on...) Figure 4The thickness of the inner electrode layer 410 is the arithmetic mean of the distances from multiple first points to multiple second points (at which multiple normals contact the line segments corresponding to the other surface of the inner electrode layer 310) when extending from multiple first points to multiple second points (at which multiple second points, multiple normals contact the line segments corresponding to the other surface of the inner electrode layer 310). The thickness of the inner electrode layer 410 can be obtained similarly by the method used to obtain the thickness d1 of the inner electrode layer 310.

[0041] The inner electrode layers 310 and 410 can expose one end surface 103 and the other end surface 104 of the insulating substrate 100, respectively. Since the inner electrode layers 310 and 410 can be formed in a large unit substrate in which the aforementioned through-holes are formed, the inner electrode layers 310 and 410 do not need to be formed on the multiple side surfaces of the multiple unit substrates obtained by cutting the large unit substrate. Therefore, in the exemplary embodiment, the inner electrode layers 310 and 410 may not be formed on one end surface 103 and the other end surface 104 of the insulating substrate 100.

[0042] As an example, the outer electrode layers 320 and 420 can be formed by a vapor deposition method such as sputtering, and can be formed using metal. The outer electrode layers 320 and 420 can be formed by forming a metal layer comprising at least one of titanium (Ti), chromium (Cr), molybdenum (Mo), and alloys thereof on one end surface 103 and the other end surface 104 of the insulating substrate 100. Therefore, the outer electrode layers 320 and 420 can completely cover one end surface 103 and the other end surface 104 of the insulating substrate 100, respectively.

[0043] The thickness d2 of each of the external electrode layers 320 and 420 can be 0.07 μm or greater and 0.15 μm or less. When the thickness d2 of each of the external electrode layers 320 and 420 is less than 0.07 μm, the adhesion between the external electrode layers 320 and 420 and one end surface 103 and the other end surface 104 of the insulating substrate 100 may be reduced, and it may be difficult to form plated electrodes on the external electrode layers 320 and 420 by electroplating. When the thickness d2 of each of the external electrode layers 320 and 420 exceeds 0.15 μm, the process time and manufacturing cost may increase.

[0044] Based on an optical micrograph of the length-thickness section (LT section) in the central portion of the resistor assembly 1000 along the width direction W, the thickness d2 of the outer electrode layer 320 can be represented as: when the normal in the length direction L originates from a surface of the inner electrode layer 310 in contact with the outer electrode layer 320 (the outer electrode layer 320 is based on...). Figure 4The distance from one point to the other is the distance along a line segment corresponding to the left surface of the outer electrode layer 320 (where the normal to the line segment corresponds to the other surface of the outer electrode layer 320). The thickness of the outer electrode layer 420 can be obtained similarly by the method used to obtain the thickness d2 of the outer electrode layer 320.

[0045] Optionally, based on an optical micrograph of the length-thickness section (LT section) in the central portion of the resistor assembly 1000 in the width direction W, the thickness d2 of the outer electrode layer 320 can be represented as: when multiple normals respectively emerge from a surface of the inner electrode layer 310 in contact with the outer electrode layer 320 (based on the outer electrode layer 320) Figure 4 The thickness of the outer electrode layer 320 is the arithmetic mean of the distances from multiple first points to multiple second points (at which multiple normals contact the line segments corresponding to the other surface of the outer electrode layer 320) when extending from multiple first points to multiple second points (at which multiple second points, multiple normals contact the line segments corresponding to the other surface of the outer electrode layer 320). The thickness of the outer electrode layer 420 can be obtained similarly by the method used to obtain the thickness d2 of the outer electrode layer 320.

[0046] Although not shown in the accompanying drawings, the first terminal 300 and the second terminal 400 may further include plated electrodes respectively disposed on the upper electrodes 311 and 411, the lower electrodes 312 and 412, and the outer electrode layers 320 and 420. The plated electrodes can be formed via an electroplating process using the upper electrodes 311 and 411, the lower electrodes 312 and 412, and the outer electrode layers 320 and 420 as seed layers. Since the plated electrodes are formed via an electroplating process using at least one of a copper plating solution, a nickel plating solution, and a tin plating solution, the plated electrodes may include at least one of copper (Cu), nickel (Ni), and tin (Sn). As an example, each of the plated electrodes may include a first layer (nickel (Ni) plating) and a second layer (tin (Sn) plating), but is not limited thereto.

[0047] The protective layer G may be disposed on the surface of the resistor layer 200 on which the first terminal 300 and the second terminal 400 are not disposed, to protect the resistor layer 200 from external impacts. As an example, the protective layer 140 may be formed using silicon dioxide (SiO2) or glass material, but is not limited thereto.

[0048] The resistor assembly 1000 in the example embodiment may include a first terminal 300 and a second terminal 400, both having relatively reduced thicknesses, and may have improved reliability against external shocks (such as vibration) and heat, thereby ensuring reliable connection to the mounting substrate. For example, the first terminal 300 and the second terminal 400 may be configured to include: inner electrode layers 310 and 410, formed on the surface of the insulating substrate 100 by a sintering process; and outer electrode layers 320 and 420, formed on the inner electrode layers 310 and 410 and the surface of the insulating substrate 100 by a vapor deposition process such as sputtering. Regarding the inner electrode layers 310 and 410, since the glass composition of the inner electrode layers 310 and 410 can be chemically bonded to the insulating substrate 100 during the sintering process, the bonding strength between the first terminal 300 and the second terminal 400 and the insulating substrate 100 can be improved. Since the outer electrode layers 320 and 420 are formed by a vapor deposition process such as sputtering, the outer electrode layers 320 and 420 can have a reduced thickness. They can be disposed on one end surface 103 and the other end surface 104 of the insulating substrate 100 where the inner electrode layers 310 and 410 are not disposed, and can also be disposed on the slot electrodes 313 and 413 of the inner electrode layers 310 and 410. An electroplated layer can be formed on the outer electrode layers 320 and 420. Therefore, the electroplated layer can be formed along one end surface 103 of the insulating substrate 100, the other end surface 104 of the insulating substrate 100, and the inner walls of the slot portions S1 and S2, so that solder or the like for connection with the mounting substrate can be formed on both one end surface 103 and the other end surface 104 of the insulating substrate 100.

[0049] The resistor assembly 1000 in the example embodiment can be manufactured using an efficient manufacturing process. For example, by jointly forming inner electrode layers 310 and 410 on a large-area substrate in which through-holes are formed, the side electrode forming process for connecting the upper electrode to the lower electrode can be omitted from the side surfaces of the unit substrate after the dicing process. Furthermore, compared to the conventional process of forming the outer electrode layer after a secondary dicing process for obtaining the unit substrate, the outer electrode layer can be formed more efficiently by jointly forming the outer electrode layers 320 and 420 on the exposed surfaces of multiple strip substrates obtained by the first dicing of the large-area substrate.

[0050] When comparing a conventional process where slot portions are not formed on one and the other end surfaces of the insulating substrate with an example embodiment, in the example embodiment, slot electrodes 313 and 413 (sintered electrodes) can be formed along the inner walls of slot portions S1 and S2, and outer electrode layers 320 and 420 can contact slot electrodes 313 and 413, which differs from the conventional process. In the case of a conventional process, outer electrode layers 320 and 420 may only contact the insulating substrate, and in this case, the bonding strength between components may be relatively weak due to the relatively low bonding strength between different materials. In the example embodiment, since outer electrode layers 320 and 420 can contact the insulating substrate 100 (e.g., one end surface 103 and the other end surface 104 of the insulating substrate 100) and also contact the slot electrodes 313 and 413 comprising the same material, the bonding strength between inner electrode layers 310 and 410, the insulating substrate 100, and the outer electrode layers 320 and 420 can be improved.

[0051] Figures 6 to 12 This is a diagram illustrating a method for manufacturing a resistor assembly according to an example embodiment.

[0052] Reference Figure 6 A substrate insulating substrate 100A can be prepared. The substrate insulating substrate 100A may have one end surface 100A-1 and another end surface 100A-2 opposite to each other, and a plurality of through holes H can be formed in the substrate insulating substrate 100A, penetrating one end surface 100A-1 and the other end surface 100A-2. Each of the plurality of through holes H may have various shapes such as circular, elliptical, polygonal, etc. Referring to one end surface 100A-1 of the substrate insulating substrate 100A, the plurality of through holes H may be arranged in rows and columns.

[0053] Reference Figure 7 A first conductive layer 10 can be formed on one end surface 100A-1 and the other end surface 100A-2 of the substrate insulating substrate 100A. The first conductive layer 10 can be formed by printing conductive paste onto one end surface 100A-1 and the other end surface 100A-2 of the substrate insulating substrate 100A and then sintering the conductive paste. During the process of applying the conductive paste to one end surface 100A-1 and the other end surface 100A-2 of the substrate insulating substrate 100A to form the first conductive layer 10, due to the fluidity of the conductive paste, the conductive paste can also be formed on the inner wall of each of the plurality of through holes H. Therefore, the first conductive layer 10 formed by sintering the conductive paste can be integrally formed along one end surface 100A-1 and the other end surface 100A-2 of the substrate insulating substrate 100A and the inner walls of the plurality of through holes H.

[0054] Reference Figure 8A resistor layer 200 can be formed on one end surface 100A-1 of the substrate insulating substrate 100A. The resistor layer 200 can be formed using at least one of Cu-Ni based alloys, Ni-Cr based alloys, Ru oxides, Si oxides, Mn and Mn-based alloys, and can be formed by screen printing a paste comprising the above materials and baking the paste. The resistor layer 200 can partially overlap with the first conductive layer 10.

[0055] Reference Figure 9 and Figure 10 The substrate insulating substrate 100A can be divided into multiple strip substrates 100B along the conceptual dividing line C1 that connects multiple through holes H to each other, and multiple strip substrates 100B can be stacked. Since the conceptual dividing line C1 can... Figure 9 The strip substrate 100B is formed in the width direction W, so that in the strip substrate 100B, the unit substrates corresponding to a single component can be connected to each other in the width direction W of the unit substrates. Therefore, at the level of the strip substrate 100B, one end surface and the other end surface of the unit substrates that are opposite each other in the length direction L can be exposed to the outside.

[0056] Reference Figure 11 A second conductive layer 20 can be formed on one end surface and the other end surface of each of the stacked plurality of strip substrates 100B. The second conductive layer 20 can be formed by jointly processing the stacked plurality of strip substrates 100B and jointly performing a vapor deposition process, such as a sputtering process, on one end surface and the other end surface of each of the plurality of strip substrates 100B. In one example, when the plurality of strip substrates 100B are stacked, the second conductive layer 20 can be formed only on one end surface and the other end surface of each of the plurality of strip substrates 100B. In other words, the second conductive layer 20 may not be formed on the surface of the plurality of strip substrates 100B on which the first conductive layer 10 and the resistor layer 200 are formed, and the second conductive layer 20 may not be formed on the other surface of the plurality of strip substrates 100B opposite to the surface on which the first conductive layer 10 and the resistor layer 200 are formed. However, this disclosure is not limited thereto.

[0057] Reference Figure 12 Multiple strip substrates 100B can be divided by the conceptual dividing line C2 to manufacture a single component.

[0058] Although not shown in the accompanying drawings, before forming the first conductive layer 10 on the substrate insulating substrate 100A, it is also possible to proceed along... Figure 9 and Figure 12 The dividing lines C1 and C2 shown are formed by a process of creating non-penetrative type scribing lines in the substrate insulating substrate 100A. Furthermore, Figure 8An example is shown in which a first conductive layer 10 is continuously formed in the width direction W on one end surface 100A-1 of a substrate insulating substrate 100A, but the example embodiment is not limited thereto. The first conductive layer 10 may be configured such that, corresponding to Figure 12 The region along dividing line C2 is cut off. Furthermore, although not shown in the figures, between the process of forming the resistor layer 200 in the substrate insulating substrate 100A and the process of forming multiple strip substrates 100B by cutting the substrate insulating substrate 100A along dividing line C1, a trimming process for adjusting the resistance value can be performed. After this, a process for forming a protective layer G for protecting the resistor layer 200 can be performed. The trimming process can be a process of precisely controlling the resistance value of the resistor layer 200 by partially removing the resistor layer 200 using a laser beam. The protective layer G can be formed by coating a paste comprising glass onto one end surface 100A-1 of the substrate insulating substrate 100A to cover the resistor layer 200 and sintering the paste.

[0059] According to the foregoing example embodiments, the resistor assembly and mounting substrate can have improved bonding reliability.

[0060] Furthermore, it can improve the efficiency of methods for manufacturing resistor components.

[0061] Although exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the invention as defined by the appended claims.

Claims

1. A resistor assembly comprising: an insulating substrate having one surface and another surface opposite to each other in a thickness direction, and one end surface and another end surface opposite to each other in a length direction of the insulating substrate; a first slot portion and a second slot portion provided on the one end surface and the another end surface of the insulating substrate, respectively, and each extending to the one surface and the another surface of the insulating substrate; a resistor layer provided on the one surface of the insulating substrate; and a first terminal and a second terminal connected to the resistor layer, wherein the first terminal includes: a first inner electrode layer including a first upper electrode provided on the one surface of the insulating substrate and extending to two edges of the one surface opposite to each other in a width direction perpendicular to the length direction, a first lower electrode provided on the another surface of the insulating substrate and extending to two edges of the another surface opposite to each other in the width direction, and a first slot electrode provided on a first inner wall of the first slot portion and connecting the first upper electrode and the first lower electrode to each other, wherein the first slot electrode extends along the first slot portion from a position connected to the first upper electrode to a position connected to the first lower electrode; and a first outer electrode layer provided on the one end surface of the insulating substrate and the first slot electrode, and contacting the one end surface of the insulating substrate, the first slot electrode, the first upper electrode, and the first lower electrode, wherein the first outer electrode layer extends from a position contacting the first upper electrode to a position contacting the first lower electrode, and in the first slot portion, the first outer electrode layer is separated from the insulating substrate by the first slot electrode, wherein the second terminal includes: a second inner electrode layer including a second upper electrode provided on the one surface of the insulating substrate and extending to two edges of the one surface opposite to each other in the width direction, a second lower electrode provided on the another surface of the insulating substrate and extending to two edges of the another surface opposite to each other in the width direction, and a second slot electrode provided on a second inner wall of the second slot portion and connecting the second upper electrode and the second lower electrode to each other, wherein the second slot electrode extends along the second slot portion from a position connected to the second upper electrode to a position connected to the second lower electrode; and a second outer electrode layer provided on the another end surface of the insulating substrate and the second slot electrode, and contacting the another end surface of the insulating substrate, the second slot electrode, the second upper electrode, and the second lower electrode, wherein the second outer electrode layer extends from a position contacting the second upper electrode to a position contacting the second lower electrode, and in the second slot portion, the second outer electrode layer is separated from the insulating substrate by the second slot electrode.

2. The resistor assembly according to claim 1, ​ wherein the first inner electrode layer and the second inner electrode layer include glass and a first metal, and the first outer electrode layer and the second outer electrode layer include a second metal.

3. The resistor assembly of claim 2, wherein, the second metal includes at least one of titanium, chromium, molybdenum, and alloys thereof.

4. The resistor assembly of claim 2, wherein, the first metal includes copper, silver, or nickel.

5. The resistor assembly of claim 1, wherein, a thickness of the first outer electrode layer and / or the second outer electrode layer is greater than or equal to 0.07 μm and less than or equal to 0.15 μm.

6. The resistor assembly of claim 1, wherein, the first outer electrode layer completely covers the one end surface of the insulating substrate, and the second outer electrode layer completely covers the other end surface of the insulating substrate.

7. The resistor assembly of claim 1, wherein, the first upper electrode, the first lower electrode, and the first slot electrode are integrated with each other along the one surface of the insulating substrate, the other surface of the insulating substrate, and the first inner wall of the first slot portion, the second upper electrode, the second lower electrode, and the second slot electrode are integrated with each other along the one surface of the insulating substrate, the other surface of the insulating substrate, and the second inner wall of the second slot portion.

8. The resistor assembly of claim 1, wherein, the first inner electrode layer exposes the one end surface of the insulating substrate, and the second inner electrode layer exposes the other end surface of the insulating substrate.

9. The resistor assembly of claim 1, wherein, the first slot portion and the second slot portion are respectively provided in central portions in the width direction of the one end surface and the other end surface of the insulating substrate.

10. The resistor assembly of claim 1, wherein, the first slot portion and / or the second slot portion has a semicircular shape based on the one surface of the insulating substrate.

11. The resistor assembly according to claim 1, wherein: a thickness of the first inner electrode layer and / or the second inner electrode layer is greater than or equal to 3 μm and less than or equal to 6 μm.

12. The resistor assembly of claim 1, wherein, a thickness of the first outer electrode layer is less than a thickness of the first inner electrode layer, and a thickness of the second outer electrode layer is less than a thickness of the second inner electrode layer.

13. A resistor assembly, comprising: an insulating substrate having one surface and another surface opposite to each other in a thickness direction and one end surface and another end surface opposite to each other in a length direction of the insulating substrate connecting the one surface and the other surface to each other; a first slot portion and a second slot portion respectively provided on the one end surface and the other end surface of the insulating substrate and each extending to the one surface and the other surface of the insulating substrate; a resistor layer provided on the one surface of the insulating substrate; and a first terminal and a second terminal respectively connected to the resistor layer, wherein the first terminal includes: ​ a first inner electrode layer including a first upper electrode provided on the one surface of the insulating substrate and extending to both edges of the one surface in a width direction perpendicular to the length direction, a first lower electrode provided on the other surface of the insulating substrate and extending to both edges of the other surface in the width direction, and a first slot electrode provided on an inner wall of the first slot portion and connecting the first upper electrode and the first lower electrode to each other, wherein the first slot electrode extends along the first slot portion from a position connected to the first upper electrode to a position connected to the first lower electrode; and a first outer electrode layer provided on the one end surface of the insulating substrate and the first slot electrode, and in contact with the one end surface of the insulating substrate, the first slot electrode, the first upper electrode, and the first lower electrode, wherein the first outer electrode layer extends from a position in contact with the first upper electrode to a position in contact with the first lower electrode, and in the first slot portion, the first outer electrode layer is separated from the insulating substrate by the first slot electrode, wherein the second terminal includes: a second inner electrode layer including a second upper electrode provided on the one surface of the insulating substrate and extending to both edges of the one surface in the width direction, a second lower electrode provided on the other surface of the insulating substrate and extending to both edges of the other surface in the width direction, and a second slot electrode provided on an inner wall of the second slot portion and connecting the second upper electrode and the second lower electrode to each other, wherein the second slot electrode extends along the second slot portion from a position connected to the second upper electrode to a position connected to the second lower electrode; and a second outer electrode layer provided on the other end surface of the insulating substrate and the second slot electrode, and in contact with the other end surface of the insulating substrate, the second slot electrode, the second upper electrode, and the second lower electrode, wherein the second outer electrode layer extends from a position in contact with the second upper electrode to a position in contact with the second lower electrode, and in the second slot portion, the second outer electrode layer is separated from the insulating substrate by the second slot electrode, of the one surface of the insulating substrate, the other surface of the insulating substrate, and the one end surface of the insulating substrate, the first outer electrode layer is provided only on the one end surface of the insulating substrate, and of the one surface of the insulating substrate, the other surface of the insulating substrate, and the other end surface of the insulating substrate, the second outer electrode layer is provided only on the other end surface of the insulating substrate.

14. The resistor assembly according to claim 13, wherein the first inner electrode layer and the second inner electrode layer include glass and a first metal, and wherein the first outer electrode layer and the second outer electrode layer include a second metal.

15. The resistor assembly of claim 14, wherein, The second metal includes at least one of titanium, chromium, molybdenum, and alloys thereof.

16. The resistor assembly of claim 14, wherein, The first metal includes copper, silver, or nickel.

17. The resistor assembly of claim 13, wherein, Each of the first outer electrode layer and the second outer electrode layer has a thickness greater than or equal to 0.07 μm and less than or equal to 0.15 μm.

18. The resistor assembly of claim 13, wherein, The first slot electrode is provided only on the inner wall of the first slot portion, and the second slot electrode is provided only on the inner wall of the second slot portion.

19. The resistor assembly of claim 13, wherein, The first inner electrode layer and / or the second inner electrode layer has a thickness greater than or equal to 3 μm and less than or equal to 6 μm.

20. The resistor assembly of claim 13, wherein, A protective layer is provided on the resistor layer and extends onto a portion of the first terminal and a portion of the second terminal.

21. A method of manufacturing the resistor assembly according to any one of claims 1 to 20, comprising: preparing a base insulating substrate having one end surface and another end surface opposite to each other in a thickness direction; forming a plurality of through-holes in the base insulating substrate, the plurality of through-holes being arranged in rows and columns, through the one end surface and the other end surface; forming a plurality of rows of first conductive layers on the one end surface and the other end surface of the base insulating substrate and inner walls of the plurality of through-holes along the through-holes arranged in rows in a width direction of the base insulating substrate, wherein the first conductive layers extend to two edges of the one end surface and the other end surface opposite to each other in the width direction, and the first conductive layers provided on the inner walls of the plurality of through-holes extend from the first conductive layers provided on the one end surface of the base insulating substrate to the first conductive layers provided on the other end surface of the base insulating substrate; forming a resistor layer connected to the first conductive layers on the one end surface of the base insulating substrate between the plurality of rows of first conductive layers; dividing the base insulating substrate in the thickness direction into a plurality of strip-shaped substrates along division lines connecting the through-holes arranged in rows to each other, wherein each of the strip-shaped substrates is provided with slot portions formed by dividing the through-holes on two end surfaces thereof in a direction perpendicular to the division lines; stacking the plurality of strip-shaped substrates to form a stack; providing second conductive layers on the first conductive layers on two end surfaces of the stack in the direction perpendicular to the division lines and inner walls of the slot portions, the second conductive layers being in contact with the two end surfaces of the stack and with the first conductive layers provided on one surface and another surface of the strip-shaped substrates opposite to each other in the thickness direction and the first conductive layers provided in the slot portions, wherein the second conductive layers extend from a position in contact with the first conductive layers provided on the one surface of the strip-shaped substrates to a position in contact with the first conductive layers provided on the other surface of the strip-shaped substrates; cutting the stack in the direction perpendicular to the division lines to form individual resistor assemblies.

22. The method according to claim 21, further comprising: After the resistor layer is formed and before the base insulating substrate is divided, a protective layer is provided on the resistor layer, the protective layer extending onto the first conductive layer adjacent to the resistor layer.

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