Electronic device and method of manufacturing the same

Abstract

This application discloses an electronic device and a method for manufacturing the same. An electronic device includes: a target substrate, an array of microsemiconductor structures, an array of bonding members, and a bonding layer. The array of microsemiconductor structures is disposed on the target substrate. The array of bonding members corresponds to the array of microsemiconductor structures and electrically connects the array of microsemiconductor structures to a patterned circuit on the target substrate; each pair of bonding members is independent of the others; each bonding member is an integral component formed by a conductive pad disposed on the target substrate and a conductive electrode disposed on each of the microsemiconductor structures through eutectic bonding. The bonding layer connects each microsemiconductor structure to the target substrate; wherein the bonding layer does not have a conductive material; each bonding member is contacted and covered by the bonding layer, and the bonding layer and the array of bonding members form a homolayer relationship.

Description

Technical Field

[0001] This invention relates to an electronic device, and an electronic device with a micro-semiconductor structure eutectic bonding and a method for manufacturing the same. Background Technology

[0002] In the manufacturing process of traditional light-emitting diodes (LEDs) with a side length greater than 150 micrometers, LEDs are fabricated using epitaxy, photolithography, metal plating, and etching processes. These LEDs are then diced into individual LED chips, and wire bonding or eutectic bonding is used to electrically connect the electrodes to the circuit substrate. However, for micro LEDs, due to their extremely small size (e.g., only 25 micrometers or smaller), it is impossible to electrically connect the electrodes using traditional wire bonding or eutectic bonding methods.

[0003] Therefore, the industry urgently needs a corresponding method for electrically connecting micro-light-emitting diodes or micro-semiconductor structures with a size of micrometer or smaller. Summary of the Invention

[0004] This invention provides an electronic device and its manufacturing method, which can be widely applied to electronic devices with different micro-semiconductor structures.

[0005] The present invention provides an electronic device and a method for manufacturing the same, which can solve the electrical connection requirements of micro-semiconductor structures with a micrometer size or smaller.

[0006] This invention provides an electronic device comprising: a target substrate, an array of microsemiconductor structures, array of bonding members, and a bonding layer. The array of microsemiconductor structures are disposed on the target substrate. The array of bonding members corresponds to the array of microsemiconductor structures and electrically connects the array of microsemiconductor structures to a patterned circuit on the target substrate; each pair of bonding members is independent of the others; each bonding member is an integral component formed by a conductive pad disposed on the target substrate and a conductive electrode disposed on each of the microsemiconductor structures via eutectic bonding; each bonding member defines a first end connecting to each microsemiconductor structure, a second end connecting to the target substrate, and a periphery connecting the first end and the second end. The bonding layer connects each microsemiconductor structure to the target substrate; wherein the bonding layer is a non-conductive material; the periphery of each bonding member is contacted and covered by the bonding layer, and the bonding layer and the array of bonding members form a homolayer relationship.

[0007] In one embodiment, each of the bonding members is a eutectic bond of an indium gold alloy system.

[0008] In one embodiment, each of the joints is a eutectic bond of an indium-nickel alloy system.

[0009] In one embodiment, the polymer material of the bonding layer includes an epoxy resin or an acrylic resin.

[0010] In one embodiment, the curing temperature of the polymer material of the bonding layer is 170-220°C.

[0011] In one embodiment, the glass transition temperature of the polymer material of the bonding layer is greater than 240°C.

[0012] The present invention provides a method for manufacturing an electronic device, comprising: coating a polymeric material to a predetermined thickness on a target substrate having a conductive pad; picking up an array of microsemiconductor structures having conductive electrodes from the polymeric material coated on the target substrate; and eutectic bonding the corresponding conductive electrodes and the conductive pad.

[0013] The conductive pad includes a first metal, and the polymer material is a non-conductive material without conductive particles. The polymer material is defined with viscosity-temperature variation characteristics: it exhibits a first viscosity at a first temperature, a second viscosity at a second temperature, a third viscosity at a third temperature, a fourth viscosity at a fourth temperature, and a fifth viscosity at a fifth temperature. The first to fifth temperatures increase in an ordered manner, with the first temperature being room temperature and the fifth temperature being the glass transition temperature. The third and fifth viscosities are limiting values, with the third viscosity being a minimum and the fifth viscosity being a maximum. The second viscosity is adjacent to the third viscosity.

[0014] The conductive electrode, including the second metal, is disposed on each of the micro-semiconductor structures, and the conductive electrode disposed on each of the micro-semiconductor structures corresponds to the conductive pad disposed on the target substrate; wherein a eutectic temperature is defined between the first metal and the second metal, and the eutectic temperature is between the third temperature and the fourth temperature.

[0015] This includes increasing the temperature of the arrayed microsemiconductor structure, the polymer material, and the target substrate from the first temperature to the fourth temperature, and sequentially performing the following steps:

[0016] Starting at the second temperature, these arrayed microsemiconductor structures are brought close to each other with a first pressure: the first pressure is applied to these arrayed microsemiconductor structures and / or the target substrate; and

[0017] Starting at the eutectic temperature, these arrayed microsemiconductor structures and the target substrate are pressed together with a second pressure: the second pressure is applied to these arrayed microsemiconductor structures and / or the target substrate, causing the conductive pad having the first metal to fuse with the conductive electrode having the second metal and forming a eutectic bond through pressing.

[0018] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the second temperature is 10°C lower than the third temperature.

[0019] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the fourth temperature is 90-100°C higher than the third temperature.

[0020] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the fourth temperature is 10-40°C higher than the eutectic temperature.

[0021] In one embodiment, the first metal and the second metal are indium and gold, respectively.

[0022] In one embodiment, the first metal and the second metal are indium and nickel, respectively.

[0023] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the eutectic temperature is 160°C.

[0024] In one embodiment, in the step of coating the polymeric material onto the target substrate to the pre-prepared thickness, the polymeric material includes epoxy resin or acrylic resin.

[0025] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the fifth temperature (glass transition temperature) is greater than 240°C.

[0026] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-prepared thickness, the pre-prepared thickness is 2-7 μm.

[0027] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-prepared thickness, the second temperature is 70-110°C.

[0028] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-thickness, the second temperature is 90°C.

[0029] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-prepared thickness, the third temperature is 80-120°C.

[0030] In one embodiment, in the step of coating the polymer material onto the target substrate to the pre-prepared thickness, the fourth temperature is 170-220°C.

[0031] In one embodiment, during the eutectic bonding step: the first pressure is between 1-10 MPa and lasts for 2-40 seconds.

[0032] In one embodiment, during the eutectic bonding step: the second pressure is between 0.5 MPa and 50 MPa, and is maintained for 5-60 seconds. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the electronic device of the present invention;

[0034] Figure 1A for Figure 1 A magnified view of a portion of the image;

[0035] Figure 2 This is a schematic flowchart of the electronic device manufacturing method of the present invention.

[0036] Figures 3A to 3E This corresponds to the manufacturing method of the electronic device of the present invention. Figure 2 A manufacturing schematic diagram of one embodiment; and

[0037] Figure 4A This is a viscosity-temperature variation characteristic diagram of the polymer material in this invention; Figure 4B For the corresponding Figure 4A Another viscosity-temperature variation characteristic diagram. Detailed Implementation

[0038] The following description, with reference to the accompanying drawings, will illustrate an electronic device and a method of manufacturing the same according to a preferred embodiment of the present invention, wherein the same elements will be described using the same reference numerals.

[0039] The present invention includes "electronic devices" having arrayed "semiconductor elements," such as (but not limited to) display panels, billboards, sensing devices, semiconductor devices, or lighting devices. The terms "micro" semiconductor structure and "micro" semiconductor device are used synonymously and refer to semiconductor elements at the microscale. "Semiconductor structure" includes (but is not limited to) high-quality single-crystal and polycrystalline semiconductors, semiconductor materials manufactured through high-temperature processing, doped semiconductor materials, organic and inorganic semiconductors, and combined semiconductor materials and structures having one or more additional semiconductor or non-semiconductor components (such as dielectric layers or materials, or conductive layers or materials). Furthermore, semiconductor structures include (but are not limited to) transistors, photovoltaic devices including solar cells, diodes, light-emitting diodes, energy beams, p-n junctions, photodiodes, integrated circuits, and semiconductor devices of sensors, and components using the aforementioned devices.

[0040] As used herein, "target substrate" refers to a non-native substrate used to receive the microsemiconductor structure. Materials used for native or non-native substrates include, but are not limited to, polymers, plastics, resins, polyimide, polyethylene naphthalate, polyethyl terephthalate, metals, metal foils, glass, quartz, glass fiber, flexible glass, semiconductors, sapphire, metal-glass fiber composites, metal-ceramic composites, etc.

[0041] As used in this article, “pick-up” refers to picking up at least a portion of at least one row of microsemiconductor structures, the number and extent of which depend on the design requirements of the target substrate.

[0042] The term "array" as used in this article refers to a matrix that can be arranged in rows, columns, or columns as needed, or in polygonal or irregular shapes, without limitation.

[0043] Please refer to Figure 1 This is a schematic diagram of an embodiment of the electronic device 10 of the present invention. The electronic device 10 includes: a target substrate 100, an array-type microsemiconductor structure 200, an array-type bonding member 300, and a bonding layer 400. Please also refer to... Figure 3A The target substrate 100 includes a substrate 110 on which a patterned circuit (not shown) designed according to the requirements of the electronic device 10 is provided, and the patterned circuit has multiple conductive pads. (See again...) Figure 1 An array of microsemiconductor structures 200 is disposed on a target substrate 100 and corresponds to the patterned circuitry of the target substrate 100. Each microsemiconductor structure 200 includes a body 210. An array of bonding members 300 corresponds to the array of microsemiconductor structures 200 and is electrically connected to the patterned circuitry of the array of microsemiconductor structures 200 to the target substrate 100. Each pair of bonding members 300 is independent of each other. Please also refer to... Figure 3E Each bonding member 300 is an integral component consisting of conductive pads disposed in the target substrate 100 and conductive electrodes disposed in each micro-semiconductor structure 200, which correspond to each other and are bonded by eutectic bonding. For example... Figure 1A Each bonding member 300 is defined with a first end 310 connecting to each microsemiconductor structure 200, a second end 320 connecting to the target substrate 100 (or its patterned circuit), and a periphery 330 connecting the first end 310 and the second end 320. A bonding layer 400 connects each microsemiconductor structure 200 to the target substrate 100; wherein the bonding layer 400 is a non-conductive material without conductive substances, such as a polymer material without conductive particles; the periphery 330 of each bonding member 300 is precisely contacted and covered by the bonding layer 400, so that the bonding layer 400 and the aforementioned plurality of (array-type) bonding members 300 form a co-layer relationship. The bonding layer 400 here is for specific processes (see [reference]). Figures 3D to 3E The cured polymer material, similar to each bonding element 300, can provide a connection between each microsemiconductor structure 200 (body 210) and the target substrate 100 (or its patterned circuit).

[0044] Please see Figure 2 , Figures 3A to 3E The above is a flowchart and schematic diagram of one embodiment of the manufacturing method of the electronic device 10 of the present invention.

[0045] like Figure 2As shown, the manufacturing method of the electronic device of the present invention includes the following steps S10, S20, and S30:

[0046] Step S10: As Figure 3B Polymer material 400a is coated onto the target substrate 100 to a predetermined thickness h1. Please refer to... Figure 3A In addition to the substrate 110, the target substrate 100 also includes a patterned circuit disposed on the substrate 110 and a conductive pad 120 having a first metal disposed on the patterned circuit.

[0047] Among them, polymer material 400a is a curable material without conductive particles, such as (but not limited to) epoxy resin or acrylic resin. Here, polymer material 400a without conductive particles differs from traditional anisotropic conductive film (ACF). It does not require conductive particles / conductive spheres dispersed in the adhesive, which account for a very high cost. Combined with the following steps, it can be widely used in various electronic devices with micro-semiconductor structures and obviously has the advantage of low cost.

[0048] See also Figure 4A The viscosity-temperature variation characteristics of polymer material 400a are defined as follows: it has a first viscosity V1 at a first temperature T1, a second viscosity V2 at a second temperature T2, a third viscosity V3 at a third temperature T3, a fourth viscosity V4 at a fourth temperature T4, and a fifth viscosity V5 at a fifth temperature T5. For example... Figure 4A As shown, the first temperature T1 to the fifth temperature T5 increase in an orderly manner. The first temperature T1 is room temperature, typically between 25℃ and 30℃. The earliest temperature at which polymer materials solidify can be traced back to the third temperature T3, while the fifth temperature T5 is the glass transition temperature of the polymer material at 400°C. The third viscosity V3 and the fifth viscosity V5 are the limiting values, as shown... Figure 4A As shown, the third viscosity V3 is a minimum value and the fifth viscosity V5 is a maximum value; the second temperature T2 is one of the operating temperatures selected by the present invention, so that the second viscosity V2 is close to the third viscosity V3; the fourth temperature T4 is another operating temperature selected by the present invention, between the third temperature T3 and the fifth temperature T5, so that the fourth viscosity V4 is between the third viscosity V3 and the fifth viscosity V5.

[0049] The prepared thickness h1 can be determined based on the selected polymer material, and such as... Figure 4A The viscosity-temperature variation characteristics are considered, and a thickness range of 2 to 7 micrometers (μm) is selected, such as 2μm, 3μm, 5μm, 6μm, 6.5μm or 7μm.

[0050] Please note that polymer material 400a exhibits different viscosities at different temperatures. Although essentially the same material, this difference arises from variations in the bonding between polymer molecules at different stages. Figures 3A to 3E In the process, polymer material 400a is a polymer material bonded at room temperature, polymer material 400b is a polymer material bonded at the second temperature T2, and polymer material 400c is a polymer material bonded at the fourth temperature T4. Finally, after curing, the bonded polymer material is stabilized, forming a polymer material as shown in the figure. Figure 1 The bonding layer 400 is formed in the present invention; wherein the bonding layer 400 may be made by the manufacturing method shown or equivalent to that shown in the present invention.

[0051] In this embodiment, the conductive pads 120 are exemplified as a pair in conjunction with the dual-electrode element disclosed below; however, they are not limited to a pair of conductive pads 120. In this embodiment, the polymer material 400a is exemplified as covering the conductive pads 120, but is not limited to covering the conductive pads 120.

[0052] Step S20: As Figure 3C The polymer material 400a coated on the target substrate 100 contacts the starting substrate (not shown) and picks up part or all of the array-type microsemiconductor structure 200 from the starting substrate.

[0053] In this embodiment, the starting substrate may be a native substrate or a non-native substrate, and the number of array-type micro-semiconductor structures 200 picked up from the starting substrate may be part or all of the number of the starting substrate; here, the number ratio picked up is not considered in this invention.

[0054] In addition to the body 210, each microsemiconductor structure 200 further includes a conductive electrode 220 having a second metal, and the conductive electrode 220 is disposed on the body 210; the microsemiconductor structure 200 in this embodiment is a dual-electrode structure, but is not limited to dual electrodes.

[0055] The conductive electrodes 220 of each microsemiconductor structure 200 can be one-to-one corresponded to the conductive pads 120 provided on the pattern circuit 120. In this embodiment, the conductive electrodes 220 of each microsemiconductor structure 200 and the conductive pads 120 of the target substrate 100 are connected to each other with a polymer material, but this is not a limitation. For example, the body 210 of each microsemiconductor structure 200 and the plate 110 or the pattern circuit of the target substrate 100 are connected to each other with a polymer material, so that the conductive electrodes 220 and the conductive pads 120 correspond one-to-one.

[0056] Please note that a eutectic temperature T is defined between the first metal of the conductive pad 120 and the second metal of the conductive electrode 220. m See also Figure 4A The eutectic temperature T mThe specific requirements vary depending on the chosen metal system, and this metal system must also be paired with the aforementioned polymer material to achieve the eutectic temperature T. m The temperature is between the third temperature T3 and the fourth temperature T4 of the polymer material. In this embodiment, the first metal and the second metal are selected from the indium-gold alloy system, that is, the first metal and the second metal respectively contain indium and gold, or the first metal and the second metal are interchanged, each containing gold and indium. To make this embodiment easier to understand, a specific ratio of indium and gold can be selected to achieve a eutectic temperature T. m Maintain a temperature of approximately 160°C; the specific ratio can be selected as an indium-gold ratio of 2:1.

[0057] Step S30: Eutectic bonding of corresponding conductive electrodes 220 and conductive pads 120; wherein, the array-type micro-semiconductor structure 200, polymer material 400a and target substrate 100 are continuously heated from a first temperature T1 to a fourth temperature T4, and the following are performed sequentially during the heating process: Figure 3D Step S32 and as follows Figure 3E Step S34.

[0058] Step S32: See also Figure 3D , Figure 4A Starting at a second temperature T2, the array microsemiconductor structure 200 and the target substrate 100 are brought close to each other with a first pressure P1: and not limited to applying pressure to the array microsemiconductor structure 200 alone or to the target substrate 100 alone, or applying pressure to both at the same time.

[0059] In this embodiment, the pressure application device 500, which is shown in a blurred diagram, represents an example of applying pressure to the array-type microsemiconductor structure 200.

[0060] As the temperature continues to increase from the first temperature T1, the polymer material 400a with viscosity V1 becomes a polymer material 400b with lower viscosity V2 when heated to the second temperature T2. The polymer material 400b has a freer flow. At this time, as the micro-semiconductor structure 200 and the target substrate 100 are brought closer to each other, the polymer material that is flowing more and more freely between the conductive electrode 220 and the conductive pad 120 has a higher probability of being displaced or even completely eliminated as the temperature continues to increase to the third temperature T3.

[0061] from Figure 4AIt is known that the polymer material at the third temperature T3 has a relatively low viscosity V3, thus exhibiting relatively high fluidity. Therefore, it is inferred that this is the temperature at which the polymer material is most easily expelled. However, upon reaching the third temperature T3, the viscosity of the polymer material immediately reverses from its viscosity V3. This invention intentionally chooses to begin bringing the conductive electrode 220 and the conductive pad 120 closer together at the second temperature T2, before the third temperature T3, thereby advancing the time for expelling the polymer material and extending the time it takes for the polymer material to be expelled.

[0062] In this step, the time during which a first pressure P1 is applied to close the gap between the two materials can be sustained and defined as a first time period. In other words, the first pressure P1 is used to displace the polymer material between the corresponding conductive electrodes 220 and conductive pads 120, and the first time period is the length of time for displacing the polymer.

[0063] In this step, the first pressure P1 is applied to bring the two together until the conductive electrode 220 and the conductive pad 120 come into contact with each other.

[0064] Step S34: See also Figure 3E , Figure 4A At the eutectic temperature T m Initially, the arrayed microsemiconductor structure 200 and the target substrate 100 are pressed together with a second pressure P2: because the fourth temperature T4 is higher than the aforementioned eutectic temperature T m A second pressure P2 is applied to the array-type microsemiconductor structure 200 and / or the target substrate 100, causing the conductive pad 120 with the first metal to fuse with the conductive electrode 220 with the second metal and to form a eutectic bond by pressing.

[0065] Similarly, the second pressure P2 in this step can be applied to one or both of the arrayed microsemiconductor structure 200 and the target substrate 100.

[0066] At this time, the conductive pad 120 having the first metal and the conductive electrode 220 having the second metal are eutecticly bonded and can be used as follows: Figure 1A The joint 300 is an integral component. As the temperature increases, the polymer material 400°C continues to solidify, forming a structure like... Figure 1 The bonding layer 400 is used to connect each microsemiconductor structure 200 (body 210) to the target substrate 100 (or its patterned circuit).

[0067] from Figure 4A It is known that the fourth temperature T4 is the temperature at which the polymer material begins to solidify; this invention intentionally selects a eutectic temperature T between the third temperature T3 and the fourth temperature T4. mBefore the polymer material cures, the conductive electrode 220 and the conductive pad 120 are pressed together to achieve a eutectic bond between them; and while the temperature is increased, the polymer material can gradually cure into such a state. Figure 1 The bonding layer 400.

[0068] In this step, the time during which a second pressure P2 is applied to compress both is sustained and defined as the second time period.

[0069] See again Figure 4A The indium-gold alloy system with respect to the first and second metals, and the eutectic temperature T it achieves. m The polymer material is selected from systems (but not limited to) epoxy or acrylic resins, such that the fifth temperature T5 (glass transition temperature) is greater than 240°C, or further selected from polymer materials whose fifth temperature T5 (glass transition temperature) is maintained at approximately 260°C. According to step S32, the eutectic temperature T... m Between the third temperature T3 and the fourth temperature T4, the polymer material between the conductive electrode 220 and the conductive pad 120 is removed before the viscosity of the polymer material reaches its minimum value. That is, the polymer material between the conductive electrode 220 and the conductive pad 120 is removed at the second temperature T2, before the third temperature T3. Then, the temperature is increased to the eutectic temperature T... m At approximately the same temperature, but not exceeding the fifth temperature T5 (glass transition temperature), pressure is applied to eutectic bond the conductive electrode 220 to the conductive pad 120. In other words, the eutectic temperature T of the selected metal system is... m Between temperature T3, where the viscosity of the polymer material system is extremely low, and the fourth temperature T4, the segmented steps S32 and S34 of step S30 can achieve the following: Figure 1 As shown, the joint 300 and the joint layer 400 are in the same layer relationship.

[0070] It is worth noting that one way to define a polymer material system is to first select an alloy system of a first metal and a second metal, and then select the polymer material system corresponding to the aforementioned alloy system; or to select the opposite. This can be done by using the selected indium-gold alloy system and its eutectic temperature T... m Taking approximately 160℃ as an example, find the corresponding polymer material Figure 4A The viscosity-temperature variation characteristics are analyzed, and temperature ranges are defined for each temperature: A fourth temperature T4 can be selected between 170-220℃, or further selected between 180-200℃. A third temperature T3 can be selected between 80-120℃, or further selected between 100℃. A second temperature T2 can be selected between 70-110℃, or further selected between 90℃.

[0071] Alternatively, another way to define a polymer material system is by using the selected indium-gold alloy system and its eutectic temperature T. m Taking approximately 160℃ as an example, find the corresponding polymer material Figure 4A The viscosity-temperature variation characteristics in the medium are primarily determined by at least one of the following three temperatures: the fourth temperature T4, the third temperature (minimum viscosity) T3, and the eutectic temperature T. m Therefore, the associated temperature is determined according to the following formula: Fourth temperature T4 relative to eutectic temperature T m The fourth temperature, T4, is 10-40℃ higher than the third temperature, T3; the second temperature, T2, is 90-100℃ lower than the third temperature, T3. Figure 4B The actual curve C1 represents the following. Figure 4A The viscosity-temperature characteristic curve is represented by the blurred curve C2, indicating the decrease in the fourth temperature from T4 to T4'. The blurred curve C2 is the same as or approximately the solid curve C1, and it conforms to the range defined in this paragraph. The eutectic temperature T can still be considered. m (Approximately 160°C) maintained between the third temperature T3' and the fourth temperature T4'; or, allowing another eutectic metal system to have a eutectic temperature T m (e.g., below the eutectic temperature T) m It remains between the third temperature T3' and the fourth temperature T4'.

[0072] Furthermore, in the eutectic bonding process, the first pressure P1 and its first time period, as well as the second pressure P2 and its second time period, can be selected according to process requirements. For example, the first pressure P1 can be selected to be between 1-10 MPa, and the first time period can be 2-40 seconds. Alternatively, the first pressure P1 can be selected to be between 1-10 MPa, and the first time period can be 2, 5, 10, 20, 30, or 40 seconds. Similarly, the second pressure P2 can be selected to be between 0.5 MPa and 50 MPa, and the second time period can be 5-60 seconds. Alternatively, the second pressure P2 can be selected to be between 0.5 MPa and 50 MPa, and the second time period can be 5, 10, 20, 30, 40, 50, or 60 seconds.

[0073] It is worth noting that the first and second metals can be selected from the indium-nickel alloy system, that is, the first and second metals respectively contain nickel and gold, or are interchangeable. A specific ratio of indium and nickel is then selected to achieve the eutectic temperature T. m Maintaining a temperature range of approximately 150℃-160℃ is also suitable. Figure 4B The C1 of the solidified curve.

[0074] In summary, the electronic device 10 and its manufacturing method of the present invention utilize non-conductive polymer materials, such as curable polymer materials without conductive particles. This eliminates the need for high-cost conductive particles / spheres. Combined with the manufacturing method of the present invention, it can be widely applied to electronic devices with micro-semiconductor structures in various fields. It not only solves the electrical connection requirements of micro-semiconductor structures at the micrometer size or smaller, but also offers the advantages of lower manufacturing time and cost.

[0075] The above description is illustrative only and not restrictive. Any equivalent modifications or alterations made without departing from the spirit and scope of this invention should be included in the appended claims.

Claims

1. An electronic device comprising: Target substrate; An array-type microsemiconductor structure is disposed on the target substrate; An array-type bonding member corresponds to the array-type microsemiconductor structure and electrically connects the array-type microsemiconductor structure to the target substrate; each pair of bonding members is independent of each other; each bonding member is an integral component consisting of a conductive pad disposed on the target substrate and a conductive electrode disposed on each of the microsemiconductor structures through eutectic bonding; each bonding member defines a first end connecting to each of the microsemiconductor structures, a second end connecting to the target substrate, and a periphery connecting the first end and the second end; as well as A bonding layer connects each of the microsemiconductor structures to the target substrate; wherein the bonding layer is a non-conductive material; the periphery of each of the bonding members is contacted and covered by the bonding layer, and the bonding layer and the array of bonding members are on the same layer. The bonding layer comprises a polymer material defined by its viscosity-temperature variation characteristics. The polymer material exhibits a first viscosity at a first temperature, a second viscosity at a second temperature, a third viscosity at a third temperature, a fourth viscosity at a fourth temperature, and a fifth viscosity at a fifth temperature. The first temperature increases sequentially to the fifth temperature. The first temperature is room temperature, the fifth temperature is the glass transition temperature of the polymer material, and the fourth temperature is the temperature at which the polymer material begins to solidify. The third and fifth viscosities are limiting values; the third viscosity is a minimum, and the fifth viscosity is a maximum. The second viscosity is adjacent to the third viscosity, and the eutectic bonding occurs between the third and fourth temperatures.

2. The electronic device according to claim 1, wherein each of the bonding members is a eutectic bond of an indium-gold alloy system.

3. The electronic device according to claim 1, wherein each of the bonding members is a eutectic bond of an indium-nickel alloy system.

4. The electronic device according to claim 1, wherein the curing temperature of the polymer material of the bonding layer is 170-220°C.

5. The electronic device according to claim 1, wherein the glass transition temperature of the polymer material of the bonding layer is greater than 240°C.

6. A method for manufacturing an electronic device, comprising: A polymeric material is coated onto a target substrate having conductive pads to a predetermined thickness; wherein the conductive pads comprise a first metal, and the polymeric material is a non-conductive material without conductive particles; wherein the polymeric material is defined by viscosity-temperature variation characteristics: exhibiting a first viscosity at a first temperature, a second viscosity at a second temperature, a third viscosity at a third temperature, a fourth viscosity at a fourth temperature, and a fifth viscosity at a fifth temperature; wherein the first temperature to the fifth temperature increases in an ordered manner, the first temperature being room temperature and the fifth temperature being the glass transition temperature; the third viscosity and the fifth viscosity are respectively limiting values, the third viscosity being a minimum value and the fifth viscosity being a maximum value; the second viscosity is adjacent to the third viscosity. An array of microsemiconductor structures with conductive electrodes is picked up by the polymer material coated on the target substrate; wherein the conductive electrodes, including a second metal, are disposed on each of the microsemiconductor structures, and the conductive electrodes disposed on each of the microsemiconductor structures correspond to the conductive pads disposed on the target substrate; wherein a eutectic temperature is defined between the first metal and the second metal, and the eutectic temperature is between the third temperature and the fourth temperature; and Eutectic bonding of the corresponding conductive electrodes and conductive pads; wherein, the process includes heating the arrayed microsemiconductor structure, the polymer material, and the target substrate from a first temperature to a fourth temperature, and sequentially performing the following steps: Starting at the second temperature, the arrayed microsemiconductor structure and the target substrate are brought close together under a first pressure: the first pressure is applied to the arrayed microsemiconductor structure and / or the target substrate; and Starting at the eutectic temperature, the arrayed microsemiconductor structure and the target substrate are pressed together with a second pressure: the second pressure is applied to the arrayed microsemiconductor structure and / or the target substrate, causing the conductive pad having the first metal to fuse with the conductive electrode having the second metal and forming a eutectic bond through pressing. 7.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The second temperature is 10°C lower than the third temperature. 8.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The fourth temperature is 90-100°C higher than the third temperature. 9.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The fourth temperature is 10-40°C higher than the eutectic temperature. 10.The method of fabricating an electronic device according to claim 6, wherein, The first metal and the second metal are indium and gold, respectively. 11.The method of fabricating an electronic device according to claim 6, wherein, The first metal and the second metal are indium and nickel, respectively.

12. The method of manufacturing an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The eutectic temperature is 160°C. 13.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The prepared thickness is 2-7 μm. 14.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The second temperature is 70-110℃. 15.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The third temperature is 80-120℃. 16.The method of fabricating an electronic device according to claim 6, wherein, In the step of coating the polymer material onto the target substrate to the pre-prepared thickness: The fourth temperature is 170-220℃.

17. The method of manufacturing an electronic device according to claim 6, wherein, In the eutectic bonding process: The first pressure is between 1 and 10 MPa and lasts for 2 to 40 seconds. 18.The method of fabricating an electronic device according to claim 6, wherein, In the eutectic bonding process: The second pressure is between 0.5 MPa and 50 MPa, and is maintained for 5-60 seconds.

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