Mounting table, substrate processing device, and heat transfer gas supply method

Abstract

The present invention relates to a carrier, a substrate processing device, and a heat-conducting gas supply method. It is possible to prevent the deterioration of an adhesive used for joining the carrier. A carrier is provided, which has: a pin through-path, which is configured to penetrate a carrier for mounting a substrate and for a lifting pin to penetrate; a heat-conducting gas supply path, which is configured to penetrate the carrier and for introducing heat-conducting gas to the mounting surface of the carrier; a common gas supply path, which is configured to connect the pin through-path and the heat-conducting gas supply path, for circulating heat-conducting gas; and a first component, which is configured to face the common gas supply path at a position where the pin through-path and the common gas supply path intersect, and is used to adjust the flow rate of the heat-conducting gas introduced from the pin through-path to the mounting surface of the carrier.

Description

Technical Field

[0001] The present invention relates to a mounting table, a substrate processing device and a heat transfer gas supply method. Background Art

[0002] Patent Document 1 discloses a mounting table comprising an electrostatic chuck, a base, and a cylindrical sleeve. The electrostatic chuck has a first through-hole formed therein. The base is bonded to the back of the electrostatic chuck using a first adhesive layer and has a second through-hole formed therein that communicates with the first through-hole.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-28448 Summary of the Invention

[0004] Problems to be solved by the invention

[0005] Provided are a mounting table, a substrate processing apparatus, and a heat transfer gas supply method capable of preventing deterioration of an adhesive used for bonding the mounting table.

[0006] Solutions for solving problems

[0007] According to one technical solution, a loading platform is provided, which has: a pin penetration path, which is configured to penetrate the loading platform for loading a substrate and for a lifting pin to penetrate; a heat-conducting gas supply path, which is configured to penetrate the loading platform and for introducing heat-conducting gas to the loading surface of the loading platform; a common gas supply path, which is configured to connect the pin penetration path and the heat-conducting gas supply path for the circulation of heat-conducting gas; and a first component, which is configured to face the common gas supply path at a position where the pin penetration path and the common gas supply path intersect, and is used to adjust the flow rate of the heat-conducting gas introduced from the pin penetration path to the loading surface of the loading platform.

[0008] Effects of the Invention

[0009] According to one aspect, it is possible to prevent deterioration of the adhesive used for bonding the mounting table. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a cross-sectional view showing a substrate processing apparatus according to an embodiment.

[0011] Figure 2 It is a cross-sectional view showing a mounting table according to the embodiment.

[0012] Figure 3 (a) to (c) are enlarged views of the first member provided on the mounting table according to the embodiment.

[0013] Figure 4(a) and (b) are diagrams for explaining the effects of the mounting table according to the embodiment in comparison with a conventional mounting table.

[0014] Figure 5 It is a cross-sectional view of a mounting table showing a modified example of the embodiment.

[0015] Figure 6 (a) and (b) are enlarged views of the second member provided on the mounting table according to a modification of the embodiment.

[0016] Figure 7 This is a flowchart showing a heat transfer gas supply method according to an embodiment. DETAILED DESCRIPTION

[0017] In one exemplary embodiment, a substrate-carrying table is provided. The table comprises: a pin-through path configured to penetrate the substrate-carrying table for receiving lift pins; a heat transfer gas supply path configured to penetrate the table for introducing heat transfer gas onto a loading surface of the table; a common gas supply path configured to connect the pin-through path and the heat transfer gas supply path for circulating heat transfer gas; and a first member configured to face the common gas supply path at a location where the pin-through path and the common gas supply path intersect, and to adjust the flow rate of the heat transfer gas introduced from the pin-through path onto the loading surface of the table.

[0018] Hereinafter, embodiments for implementing the present invention will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, substantially the same configurations may be denoted by the same reference numerals and overlapping descriptions may be omitted.

[0019] [Substrate processing equipment]

[0020] First, refer to Figure 1 A substrate processing apparatus 1 according to the embodiment will be described. Figure 1 FIG. 1 is a diagram showing an example of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 provides an example of several plasma generation systems used to generate plasma from a processing gas.

[0021] [Substrate processing equipment]

[0022] Figure 1This is a schematic cross-sectional view showing the structure of a substrate processing apparatus 100 according to this embodiment. The substrate processing apparatus 100 includes an airtight chamber 1 at a ground potential. The chamber 1 is cylindrical and made, for example, of aluminum. A stage ST for mounting a substrate W is provided within the chamber 1. The stage ST includes a base 6, a lower electrode 4, and an electrostatic chuck 5. The base 6 and the lower electrode 4 are made of a conductive metal, such as aluminum. The base 6 supports the lower electrode 4 and the stage ST. A wafer is an example of a substrate W.

[0023] An edge ring 7 made of, for example, silicon is provided around the substrate W. This edge ring 7 is also referred to as a focus ring. A cylindrical inner wall member 9a made of, for example, quartz is provided around the edge ring 7, the lower electrode 4, and the base 6. The stage ST is positioned at the bottom of the chamber 1, with the inner wall member 9a and a support member 9 made of, for example, quartz interposed therebetween.

[0024] The electrode 5c in the electrostatic chuck 5 is sandwiched between dielectrics 5b and connected to a power source 12. When a voltage is applied to the electrode 5c from the power source 12, the substrate W is electrostatically attracted to the electrostatic chuck 5 by Coulomb force.

[0025] The mounting table ST has a flow path 2d inside. The heat medium supplied from the cooler unit, such as water, circulates in the inlet pipe 2b, the flow path 2d, and the outlet pipe 2c. A heat transfer gas supply path 16 and a common gas supply path 17 are formed inside the mounting table ST. The heat transfer gas source 19 supplies heat transfer gas to the heat transfer gas supply path 16, introduces the heat transfer gas into the space between the lower surface of the substrate W and the mounting surface of the electrostatic chuck 5, and circulates the heat transfer gas in the common gas supply path 17. The heat transfer gas is supplied from the common gas supply path 17 to the pin penetration path 14. At this time, the flow rate of the heat transfer gas supplied to the pin penetration path 14 is adjusted by the first component 30. Thus, a heat transfer gas of a desired pressure is introduced into the space between the lower surface of the substrate W and the mounting surface of the electrostatic chuck 5. The introduced heat transfer gas may also be an inert gas such as helium (He) or argon (Ar). In the embodiment, the example of introducing helium is cited for explanation. In addition, not only heat transfer gases but also gases used in the process can be applied. Examples of the gas used in the process include oxygen (O 2 ) and nitrogen (N 2 ).

[0026] A plurality of, for example, three lift pins 13 are passed through the stage ST ( Figure 1 Only one lift pin 13 is shown in the figure. A pin insertion path 14 is provided on the mounting table ST. The lift pin 13 passing through the pin insertion path 14 is connected to the lift mechanism 62 and moves up and down by the drive of the lift mechanism 62.

[0027] The base is connected to the first RF power supply 10a via the first matching box 11a and to the second RF power supply 10b via the second matching box 11b. The first RF power supply 10a applies high-frequency power to the lower electrode 4 for generating plasma of a predetermined frequency. The second RF power supply 10b applies high-frequency power to the lower electrode 4 at a frequency lower than the frequency of the high-frequency power for generating plasma and for use as a bias voltage for attracting ions. However, the high-frequency power supplied from the second RF power supply 10b is sometimes also used to generate plasma. An upper electrode 3 is provided above the stage ST, facing the stage ST. The upper electrode 3 and the stage ST function as a pair of electrodes (upper electrode and lower electrode). The upper electrode 3 also functions as a gas shower.

[0028] The upper electrode 3 includes an electrode plate 3b and a top plate 3a. An insulating ring-shaped member 95 is provided around the upper electrode 3 to support the upper electrode 3. The upper opening of the chamber 1 is sealed by the upper electrode 3 and the ring-shaped member 95. The top plate 3a is formed of a conductive material, such as anodized aluminum, and detachably supports the electrode plate 3b at its lower portion.

[0029] The top plate 3a is formed with a gas diffusion chamber 3c and a gas inlet 3g for introducing process gas into the gas diffusion chamber 3c. The gas inlet 3g is connected to a gas supply pipe 15a. The gas supply pipe 15a is connected in sequence to a gas supply unit 15, a mass flow controller (MFC) 15b, and an on-off valve V2. Process gas is supplied from the gas supply unit 15 into the top plate 3a via the gas supply pipe 15a. The on-off valve V2 and the mass flow controller (MFC) 15b control the on / off flow and flow rate of the gas.

[0030] A plurality of gas flow holes 3d are formed below the gas diffusion chamber 3c, extending into the chamber 1. These holes penetrate the electrode plate 3b. The tops of the gas flow holes 3d serve as gas inlet holes 3e. Processing gas is supplied in a shower pattern into the chamber 1 through the gas diffusion chamber 3c and the gas flow holes 3d.

[0031] The upper electrode 3 is connected to a variable DC power supply 72 via a low-pass filter (LPF) 71. The supply of the DC voltage output from the variable DC power supply 72 is turned on / off by a switch 73. The DC voltage from the variable DC power supply 72 and the on / off operation of the switch 73 are controlled by a control unit 90. When high-frequency power is applied to the mounting stage ST from the first RF power supply 10a and the second RF power supply 10b to generate plasma from the processing gas, the switch 73 is turned on by the control unit 90 as needed to apply a predetermined DC voltage to the upper electrode 3.

[0032] A cylindrical ground conductor 1a is provided so as to extend from the side wall of the chamber 1 in a direction above the height position of the upper electrode 3. The cylindrical ground conductor 1a has a ceiling wall at its upper portion.

[0033] An exhaust port 81 is formed at the bottom of the chamber 1 and is connected to an exhaust device 83 via an exhaust pipe 82. The exhaust device 83 includes a vacuum pump, which operates to reduce the pressure within the chamber 1 to a predetermined vacuum level. A substrate W inlet / outlet port 84 is provided on a side wall of the chamber 1. The inlet / outlet port 84 can be opened and closed by a gate valve 85.

[0034] A sediment shield 86 is provided along the inner wall surface of the side of the chamber 1. Furthermore, a sediment shield 87 is detachably installed along the inner wall member 9a. Sediment shields 86 and 87 prevent etching byproducts (sediments) from adhering to the inner wall of the chamber 1 and the inner wall member 9a. A conductive member (GND block) 89, connected to a ground in a manner that allows for controllable potential, is provided at a height substantially equal to that of the substrate W on the sediment shield 86 to prevent abnormal discharge.

[0035] The substrate processing apparatus 100 is centrally controlled by a control unit 90. The control unit 90 includes a process controller 91 for controlling various components of the substrate processing apparatus 100, a user interface 92, and a storage unit 93.

[0036] The user interface 92 includes a keyboard for a process manager to input commands for managing the substrate processing apparatus 100 , a display for visually displaying the operating status of the substrate processing apparatus 100 , and the like.

[0037] The storage unit 93 stores a process, which stores control programs (software) for executing various processes performed by the process controller 91 using the substrate processing apparatus 100, processing condition data, etc. Moreover, as needed, under instructions from the user interface 92, an arbitrary process is called out from the storage unit 93 and executed by the process controller 91, so that the desired process is performed in the substrate processing apparatus 100 under the control of the process controller 91. In addition, the process such as the control program and the processing condition data can be stored in a computer storage medium that can be read by a computer, or can be transmitted from another device via a dedicated line at any time and used online. Examples of storage media include hard disks, CDs, floppy disks, semiconductor memories, etc.

[0038] [Loading platform]

[0039] Next, refer to Figure 2 and Figure 3 (a) to (c) of FIG. 1 illustrate the mounting table ST according to the embodiment. Figure 2It is a cross-sectional view showing the mounting table ST according to the embodiment. Figure 3 (a) to (c) are enlarged views of the first member 30 provided on the mounting table ST of the embodiment. Figure 2 As shown, an adhesive layer 21 is provided between the electrostatic chuck 5 and the lower electrode 4 to bond the electrostatic chuck 5 and the lower electrode 4 together using an adhesive.

[0040] Inside the mounting table ST, there are provided a heat transfer gas supply path 16, a pin insertion path 14, and a common gas supply path 17. The heat transfer gas supply path 16 includes a through hole 16a vertically extending through the electrostatic chuck 5, a through hole 16b vertically extending through the lower electrode 4, and a through hole 16c vertically extending through the base 6.

[0041] Through-hole 16b is located below through-hole 16a and is vertically connected to through-hole 16a. The diameter of through-hole 16b is larger than that of through-hole 16a. Through-hole 16a opens onto the mounting surface of electrostatic chuck 5. Through-hole 16b is connected to through-hole 16c via common gas supply path 17. However, through-hole 16c may be located below through-hole 16b and be vertically connected to through-hole 16b. The diameter of through-hole 16c may be the same as or different from the diameter of through-hole 16b.

[0042] The pin insertion path 14 includes a through hole 14a that vertically penetrates the electrostatic chuck 5 , a through hole 14b that vertically penetrates the lower electrode 4 , and a through hole 14c that communicates with the through hole 30b of the first member 30 and vertically penetrates the base 6 .

[0043] Through hole 14b is located below through hole 14a and is vertically connected to through hole 14a. The diameter of through hole 14b is the same as the diameter of through hole 14a. However, the diameter of through hole 14b may be different from the diameter of through hole 14a. Through hole 14a opens on the upper surface of electrostatic chuck 5. Through hole 30b is located below through hole 14b across common gas supply path 17 and is vertically connected to through hole 14b. The diameter of through hole 30b is the same as the diameter of through hole 14b. Through hole 14c is located below through hole 30b and is vertically connected to through hole 30b. The diameter of through hole 14c is the same as the diameter of through hole 30b. However, the diameter of through hole 14c may be different from the diameter of through hole 14b.

[0044] The first member 30 is embedded in a recessed portion formed by an opening on the upper surface of the base 6. The through hole 14c is located below the through hole 14b and vertically communicates with the through hole 14b via the through hole 30b of the first member 30. The diameter of the through hole 14c is the same as that of the through hole 14b.

[0045] Helium gas output from heat transfer gas source 19 passes through through-hole 16c and common gas supply path 17, then through through-hole 16b and is introduced from through-hole 16a onto mounting surface 5a of electrostatic chuck 5. Common gas supply path 17 is the space between lower electrode 4 and base 6. It is configured so that helium gas does not leak into the processing space by means of an O-ring 40 located near the end between lower electrode 4 and base 6. Furthermore, O-ring 40 serves to separate the processing space, which is a vacuum space, from the atmosphere.

[0046] The helium gas flows into the pin insertion path 14 through the common gas supply path 17 . Thus, the helium gas is introduced onto the mounting surface 5 a of the electrostatic chuck 5 from the gap between the pin insertion path 14 and the lift pins 13 .

[0047] Reference Figure 3 (a) to (c) further describe the first member 30 and the structure of its periphery. Figure 3 (a) is a magnified Figure 2 A cross-sectional view of the first member 30 and its surroundings shown in FIG. Figure 3 (b) is Figure 3 An example of the BB cross section in (a) is a diagram in which the first member 30 is viewed from above. Figure 3 (c) is Figure 3 Another example of the BB cross section in (a) is a diagram in which the first member 30 is viewed from above.

[0048] like Figure 3 As shown in (a), the first member 30 is embedded in a recess provided in the base 6 so that its upper surface is flush with the upper surface of the base 6. Thus, the first member 30 is configured to face the common gas supply path 17. The lift pin 13 is inserted through the through hole 30b that extends through the interior of the first member 30.

[0049] The first member 30 may be formed of an insulating material such as resin, sapphire, or PTFE (polytetrafluoroethylene).

[0050] The first member 30 has a protrusion 30a on the outer periphery of the upper surface. The protrusion 30a is provided in contact with the lower surface of the lower electrode 4. Figure 3As shown in (b) and (c) of FIG. , the protrusion 30a is formed circumferentially on the outer periphery of the upper surface of the first member 30. Multiple grooves 30c are formed at equal intervals in the protrusion 30a. The multiple grooves 30c are arranged radially. The multiple grooves 30c are used to adjust the flow rate of helium gas flowing from the common gas supply path 17 to the pin penetration path 14. Furthermore, the protrusion 30a can be provided not only on the outer periphery but also on the entire surface from the inner side of the upper surface toward the outer periphery.

[0051] Thus, while the helium gas is introduced from the heat transfer gas supply path 16 into the space between the lower surface of the substrate W and the mounting surface 5a of the electrostatic chuck 5, the helium gas is introduced into the above-mentioned space from the pin penetration path 14 connected to the common gas supply path 17 while adjusting the flow rate by the plurality of grooves 30c. Figure 3 For example, the number of grooves 30c may be one or more. In addition, the plurality of grooves 30c may be formed at unequal intervals.

[0052] By changing the shape, width, and number of the grooves 30c of the first member 30 to change the conductivity of the flow path for the helium gas, the flow rate of the helium gas introduced from the pin penetration path 14 to the mounting surface 5a of the electrostatic chuck 5 can be optimized. Figure 3 In (b), eight grooves 30c are evenly arranged around the outer periphery of the upper surface of the first member 30. In this case, helium gas flows from the common gas supply path 17 through the eight grooves 30c toward the inner side of the first member 30, flows through the pin insertion path 14, and is introduced onto the mounting surface 5a of the electrostatic chuck 5. The grooves 30c may be provided not only on the outer periphery but also along the entire surface from the inner side toward the outer periphery of the upper surface.

[0053] In contrast, in Figure 3 In (c), the four grooves 30c are evenly arranged on the outer periphery of the upper surface of the first member 30. In this case, helium gas is introduced from the common gas supply path 17 through the four grooves 30c to the mounting surface 5a of the electrostatic chuck 5. When the shapes (widths) of the grooves 30c are the same, it is possible to Figure 3 When the first member 30 shown in (b) is provided, the conductivity is increased, and the flow rate of the helium gas introduced to the mounting surface 5a can be increased. Figure 3 When the first member 30 shown in (c) is provided, the conductivity is lowered, thereby reducing the flow rate of helium gas introduced onto the mounting surface 5a. However, the flow rate of helium gas can be changed by adjusting or changing the thickness of the lift pins 13, not only by the number of grooves 30c but also by the shape of the grooves 30c.

[0054] [Effect]

[0055] Reference Figure 4 (a) and (b) describe the effects of performing a wafer-less dry cleaning (WLDC: Wafer Less Dry Cleaning) process in the substrate processing apparatus 1 including the mounting stage ST described above. Figure 4 (b) is used with Figure 4 FIG (a) is a diagram for explaining the effect of the mounting table ST of the embodiment in comparison with the conventional mounting table OS shown in FIG. Figure 4 The member 130 shown in (a) does not have a function of adjusting the flow rate of helium gas when the lift pin 13 is lifted and lowered in the pin insertion path 14 in the vertical direction, as does the first member 30 .

[0056] for Figure 4 In the mounting table ST of the embodiment shown in FIG. 2 (b), during substrate processing, helium gas is introduced from the heat transfer gas supply path 16 and the pin passage 14 onto the mounting surface 5a of the electrostatic chuck 5. Similarly, during cleaning processing, helium gas is introduced from the heat transfer gas supply path 16 and the pin passage 14 onto the mounting surface 5a of the electrostatic chuck 5.

[0057] In particular, waferless dry cleaning is performed without placing the substrate W on the electrostatic chuck 5. In this case, the surface of the electrostatic chuck 5 is exposed to the plasma P. Figure 4 In the conventional mounting table OS shown in FIG. 1 ( a ), radicals in the plasma P enter the pin penetration path 14 and the heat transfer gas supply path 16 .

[0058] Thus, when the adhesive layer 21 is exposed to the plasma P entering the interior, its components are damaged. Figure 4 The portion of the adhesive layer 21 indicated by C in (a) is lost or the adhesive strength is deteriorated.

[0059] If the adhesive layer 21 is worn out or the adhesive strength is degraded, it becomes difficult to control the heat conduction to the components connected to the electrostatic chuck 5 (substrate W, edge ring 7, lower electrode 4). As a result, it becomes difficult to uniformly and accurately process the substrate W.

[0060] Therefore, in the embodiment, a mounting table ST capable of preventing degradation of the adhesive layer 21 used for adhesive bonding of the electrostatic chuck 5 and a substrate processing apparatus 1 including such a mounting table ST are provided.

[0061] That is, Figure 4 As shown in (b), while the flow rate of helium gas is adjusted by the first member 30, helium gas is introduced into the pin penetration path 14 and the heat transfer gas supply path 16 at the same time. Figure 4 The portion of the adhesive layer 21 indicated by D in (b) does not suffer loss or deterioration in adhesive strength.

[0062] This configuration supplies helium gas not only to the heat transfer gas supply path 16 but also to the pin insertion path 14, thereby preventing plasma P from entering the heat transfer gas supply path 16 and the pin insertion path 14. This prevents deterioration of the adhesive layer 21. This is particularly effective when no substrate W is placed during the cleaning process.

[0063] [Modification]

[0064] Next, refer to Figure 5 and Figure 6 (a) and (b) illustrate a mounting table ST according to a modified example of the embodiment. Figure 5 It is a cross-sectional view showing a mounting table ST according to a modified example of the embodiment. Figure 6 (a) and (b) are enlarged views of the second member 37 provided on the mounting table ST according to a modified example of the embodiment.

[0065] The mounting platform ST of the modified example differs from the mounting platform ST of the embodiment in that a second member 37 is disposed within the heat transfer gas supply path 16, including the through-hole 16a at the tip portion of the heat transfer gas supply path 16. The remaining configuration of the mounting platform ST of the modified example is the same as that of the embodiment. Therefore, the following description will focus on the second member 37, and descriptions of the remaining configurations will be omitted.

[0066] In the modified mounting table ST, the flow rate of helium gas introduced from the pin penetration path 14 to the mounting surface 5a of the electrostatic chuck 5 can be adjusted using the first component 30, and the flow rate of helium gas introduced from the heat transfer gas supply path 16 to the mounting surface 5a can be adjusted using the second component 37.

[0067] exist Figure 5 In the example of FIG, the second member 37 is inserted into the through-hole 16a and the through-hole 16b of the heat transfer gas supply path 16. The second member 37 may be formed of an insulating material such as resin, sapphire, or PTFE.

[0068] Figure 5 Since the diameter of through-hole 16b is larger than that of through-hole 16a, the diameter of the portion of second member 37 corresponding to through-hole 16b is larger than the diameter of the portion of second member 37 corresponding to through-hole 16a. This prevents second member 37 from flying out from inside heat transfer gas supply path 16.

[0069] The upper end of the second member 37 is disposed so as not to protrude from the mounting surface 5a of the electrostatic chuck 5. Furthermore, the lower end of the second member 37 abuts against the upper surface of the base 6. Thus, the flow rate of the heat transfer gas supply path 16 can be adjusted using the second member 37. As a result, the flow rates of the helium gas flowing through the pin insertion path 14 and the heat transfer gas supply path 16 can be optimized.

[0070] For example, in Figure 6 (a) shows the enlarged Figure 2 Box E, in Figure 6 (b) shows the enlarged Figure 5 Box F. Figure 6 As shown in (b), when the second member 37 is inserted into the heat transfer gas supply path 16, Figure 6 Compared with the case where the second member 37 is not inserted as shown in (a), the conductivity can be reduced. As a result, the flow rate of helium supplied to the mounting surface 5a can be suppressed. In addition, by changing the diameter of the second member 37, the conductivity is changed, and the flow rate of helium supplied to the mounting surface 5a can be changed. The dimensions of the pin penetration path 14 and the heat transfer gas supply path 16 are sometimes different. Therefore, it is also possible to change the diameter and shape of the second member 37 according to the shape of the heat transfer gas supply path 16. Alternatively, it is also possible to change the presence or absence of the insertion of the second member 37 according to the shape of the heat transfer gas supply path 16. Moreover, the diameter of the lifting pin can also be changed according to the shape of the pin penetration path 14.

[0071] As described above, according to the mounting table ST of the modified example, helium gas can be supplied from the heat transfer gas supply path 16 and the pin insertion path 14. This prevents radicals, primarily in the plasma P, from entering the pin insertion path 14 and the heat transfer gas supply path 16 and degrading the adhesive layer 21. Furthermore, the flow rate of helium gas flowing through the pin insertion path 14 can be adjusted by the first member 30, and the flow rate of helium gas flowing through the heat transfer gas supply path 16 can be adjusted by the second member 37. This suppresses the flow rate of helium gas flowing from the heat transfer gas supply path 16 and the pin insertion path 14 toward the mounting surface 5a.

[0072] In addition, in the embodiment and the modified example, the helium gas supply line from the heat transfer gas source 19 is a single line passing through the through-hole 16c, but this is not limiting. For example, the helium gas supply lines for the heat transfer gas supply path 16 and the pin through-hole 14 may each be provided with a line primarily flowing through the through-hole 16c in the heat transfer gas supply path 16, and a line (not shown) primarily flowing through the pin through-hole 14. In this case, the helium gas flowing through the heat transfer gas supply path 16 and the pin through-hole 14 can also flow through the common gas supply path 17.

[0073] [Heat transfer gas supply method]

[0074] Finally, refer to Figure 7 A heat transfer gas supply method performed in the substrate processing apparatus 1 including the mounting stage ST according to the embodiment and the modified example will be described. Figure 7 2 is a flow chart showing a heat transfer gas supply method according to an embodiment. The heat transfer gas supply method is controlled by the control unit 20 .

[0075] When the thermally conductive gas supply method begins, helium gas is supplied from thermally conductive gas source 19 to thermally conductive gas supply path 16, and the helium gas is introduced from thermally conductive gas supply path 16 onto the upper surface of mounting table ST (mounting surface 5a of electrostatic chuck 5) (step S1). Furthermore, helium gas is circulated through common gas supply path 17 and supplied to pin passage 14, and then introduced from pin passage 14 onto the upper surface of mounting table ST (step S1). Next, a processing gas is supplied into chamber 2, and plasma is generated from the processing gas using RF power (step S2). The generated plasma is then used to perform desired processing, such as cleaning, to terminate the process (step S3).

[0076] According to the heat transfer gas supply method of the embodiment described above, helium gas can be supplied to the upper surface of the mounting table ST from the heat transfer gas supply path 16 and the pin insertion path 14. This prevents plasma P or radicals from entering the pin insertion path 14 and the heat transfer gas supply path 16 and causing the adhesive layer 21 to be damaged or degraded.

[0077] While the mounting platform, substrate processing apparatus, and heat transfer gas supply method have been described above using the aforementioned embodiments, the mounting platform, substrate processing apparatus, and heat transfer gas supply method of the present invention are not limited to the aforementioned embodiments and are capable of various modifications and improvements within the scope of the present invention. The contents of the aforementioned embodiments and modifications may be combined within the scope of non-inconsistency.

[0078] For example, the mounting table in the above-described embodiment and modified examples includes an electrostatic chuck, but the present invention is not limited thereto. For example, a mounting table without an electrostatic chuck may also be used.

[0079] The substrate processing apparatus of the present invention can also be applied to any of capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna, electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP). Thus, the substrate processing apparatus of the present disclosure can be applied to an apparatus comprising a chamber having a plasma processing space, a stage disposed within the processing space, and a plasma generating unit configured to generate plasma from a gas supplied to the processing space.

Claims

1. A mounting platform, wherein: The mounting platform has: a conductive base disposed in the chamber; an electrode disposed on an upper portion of the base; and an electrostatic chuck disposed on top of the electrode, Wherein, the electrostatic chuck is formed with: a first pin through-hole extending from the upper surface of the electrostatic chuck to the lower surface of the electrostatic chuck for a lift pin to pass through; and a first heat transfer gas supply hole extending from the upper surface of the electrostatic chuck to the lower surface of the electrostatic chuck, the first heat transfer gas supply hole being different from the first pin through hole; The electrodes are formed with: a second pin through-hole extending from the upper surface of the electrode to the lower surface of the electrode, the second pin through-hole communicating with the first pin through-hole; and a second heat transfer gas supply hole extending from the upper surface of the electrode to the lower surface of the electrode, the second heat transfer gas supply hole being connected to the first heat transfer gas supply hole; A third pin through-path is formed in the base, the third pin through-path penetrating from the upper surface of the base to the lower surface of the base, and the third pin through-path is communicated with the second pin through-hole. The second pin through hole and the second heat transfer gas supply hole are connected via a common gas supply path formed between the lower surface of the electrode and the upper surface of the base. The first pin through hole and the second pin through hole are connected in a manner perpendicular to the upper surface of the electrostatic chuck. A recessed portion communicating with the second pin through-hole is formed on the upper surface of the base. The recessed portion is provided with a first member, the first member including a plurality of protrusions formed along the circumferential direction. Here, the second pin through-hole and the common gas supply path are communicated with each other via grooves formed between the plurality of protrusions.

2. The mounting table according to claim 1, wherein: A plurality of the grooves are radially arranged.

3. The mounting table according to claim 1 or 2, wherein: A second member configured to adjust the flow rate of the heat transfer gas is disposed inside the second heat transfer gas supply hole.

4. The mounting table according to claim 1 or 2, wherein: A third heat transfer gas supply hole is formed in the base. The third heat transfer gas supply hole penetrates from the upper surface of the base to the lower surface of the base, and the third heat transfer gas supply hole communicates with the second heat transfer gas supply hole.

5. The mounting table according to claim 1 or 2, wherein: The diameter of the first pin through hole is equal to the diameter of the second pin through hole.

6. The mounting table according to claim 1 or 2, wherein: The first heat transfer gas supply hole and the second heat transfer gas supply hole are connected to each other in a manner perpendicular to the upper surface of the electrostatic chuck. A diameter of the second heat transfer gas supply hole is larger than a diameter of the first heat transfer gas supply hole.

7. A substrate processing apparatus comprising: chamber; a conductive base disposed in the chamber; an electrode disposed on an upper portion of the base; and an electrostatic chuck disposed on top of the electrode, in, The electrostatic chuck is formed with: a first pin through hole extending from the upper surface of the electrostatic chuck to the lower surface of the electrostatic chuck for a lifting pin to pass through; as well as a first heat transfer gas supply hole extending from the upper surface of the electrostatic chuck to the lower surface of the electrostatic chuck, the first heat transfer gas supply hole being different from the first pin through hole; The electrodes are formed with: a second pin through-hole extending from the upper surface of the electrode to the lower surface of the electrode, the second pin through-hole being in communication with the first pin through-hole; as well as a second heat transfer gas supply hole extending from the upper surface of the electrode to the lower surface of the electrode, the second heat transfer gas supply hole being connected to the first heat transfer gas supply hole; A third pin through-path is formed in the base, the third pin through-path penetrating from the upper surface of the base to the lower surface of the base, and the third pin through-path is communicated with the second pin through-hole. The second pin through hole and the second heat transfer gas supply hole are connected via a common gas supply path formed between the lower surface of the electrode and the upper surface of the base. The first pin through hole and the second pin through hole are connected in a manner perpendicular to the upper surface of the electrostatic chuck. A recessed portion communicating with the second pin through-hole is formed on the upper surface of the base. The recessed portion is provided with a first member, the first member including a plurality of protrusions formed along the circumferential direction. Here, the second pin through-hole and the common gas supply path are communicated with each other via grooves formed between the plurality of protrusions.

8. A heat transfer gas supply method using the mounting table according to any one of claims 1 to 6, wherein: The heat transfer gas supply method includes the following steps: supplying heat transfer gas from a heat transfer gas source to the first heat transfer gas supply hole and the second heat transfer gas supply hole, and introducing the heat transfer gas from the first heat transfer gas supply hole to the upper surface of the electrostatic chuck; as well as Heat transfer gas is circulated through the common gas supply path, and introduced into the mounting surface of the mounting table from the first pin insertion hole communicating with the second pin insertion hole connected to the second heat transfer gas supply hole via the common gas supply path.

9. The heat transfer gas supply method according to claim 8, wherein: The heat transfer gas supply method includes the steps of introducing a processing gas into a chamber and converting the processing gas into plasma using high frequency power.

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