Semiconductor device including redistribution layer and method for manufacturing the same

Abstract

A semiconductor device including a redistribution layer and a method for manufacturing the same. A semiconductor memory device includes: a lower structure; a redistribution insulating layer disposed above the lower structure; a redistribution conductive layer disposed above the redistribution insulating layer and electrically connected to a portion of the lower structure, the redistribution conductive layer including a redistribution pad; and a protective layer covering the redistribution insulating layer and the redistribution conductive layer and exposing the redistribution pad. The redistribution conductive layer includes a groove disposed adjacent to the redistribution pad, and a portion of the protective layer fills the groove.

Description

Technical Field

[0001] Various embodiments relate to a semiconductor device, and more particularly, to a semiconductor device including a redistribution layer. Background Art

[0002] The semiconductor device may include an integrated circuit for performing various functions. In order to connect such a semiconductor device to an external terminal, it may be necessary to form a redistribution layer.

[0003] The redistribution layer may be formed mainly in a state where a wafer having a circuit pattern formed therein is fabricated (ie, in a packaging process). However, in some cases, the redistribution layer may be formed together with the circuit pattern in a front-end process (forming the circuit pattern in the wafer). Summary of the invention

[0004] Various embodiments relate to a semiconductor device capable of preventing process defects while ensuring reliability and operating characteristics and a method of manufacturing the same.

[0005] In one embodiment, a semiconductor device may include: a lower structure; a redistribution insulating layer disposed above the lower structure; a redistribution conductive layer disposed above the redistribution insulating layer and electrically connected to a portion of the lower structure, the redistribution conductive layer including a redistribution pad; and a protective layer covering the redistribution insulating layer and the redistribution conductive layer and exposing the redistribution pad. The redistribution conductive layer may include a groove disposed adjacent to the redistribution pad, and a portion of the protective layer may fill the groove.

[0006] In one embodiment, a method for manufacturing a semiconductor device may include the following steps: forming a lower structure; forming a redistribution insulating layer over the lower structure; forming a redistribution conductive layer over the redistribution insulating layer, the redistribution conductive layer including a groove formed therein and a redistribution pad; and forming a protective layer covering the redistribution insulating layer and the redistribution conductive layer and exposing the redistribution pad. The groove may be disposed adjacent to the redistribution pad, and a portion of the protective layer may fill the groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a plan view showing a redistribution conductive layer of a semiconductor device according to an embodiment of the present disclosure.

[0008] Figure 2 and Figure 3 is a cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure.

[0009] Figure 4is a diagram showing a part of a process for forming a connection terminal to be connected to a semiconductor device according to an embodiment of the present disclosure.

[0010] Figure 5 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure.

[0011] Figure 6 is along Figure 5 An enlarged plan view of a portion taken along line A3-A3' and its surroundings.

[0012] Figure 7 is along Figure 5 A cross-sectional view taken along line A3-A3'.

[0013] Figure 8 FIG. 1 is a diagram showing a state in which a connection terminal is further formed in a semiconductor device according to another embodiment of the present disclosure.

[0014] Fig. 9 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure.

[0015] Fig.10 is along Fig. 9 An enlarged plan view of a portion taken along line A4-A4' and its surroundings.

[0016] Fig.11 is along Fig. 9 A cross-sectional view taken along line A4-A4'.

[0017] Fig.12 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure.

[0018] Fig.13 is along Fig.12 An enlarged plan view of a portion taken along line A5-A5' and its surroundings.

[0019] Fig.14 is along Fig.12 A cross-sectional view taken along line A5-A5'.

[0020] Fig.15A , Fig. 15B and Fig. 15C is a plan view showing shapes of a redistribution pad and a trench according to another embodiment of the present disclosure.

[0021] Fig.16 A block diagram of an electronic system employing a memory card including a semiconductor package according to one embodiment is shown.

[0022] Fig.17A block diagram illustrating another electronic system including a semiconductor package according to one embodiment is shown. DETAILED DESCRIPTION

[0023] Various examples and implementations of the disclosed technology are described in detail below with reference to the accompanying drawings.

[0024] The drawings may not necessarily be drawn to scale, and in some cases, the proportions of at least some structures in the drawings may be exaggerated in order to clearly illustrate the specific features of the described examples or embodiments. When a specific example with two or more layers is presented in a multilayer structure in the drawings or descriptions, the relative positioning relationship of these layers or the order in which the layers are arranged as shown reflects the specific embodiment of the described or illustrated example, and different relative positioning relationships or orders of arrangement of layers are also possible. In addition, the example of the described or illustrated multilayer structure may not reflect all the layers present in the specific multilayer structure (for example, one or more additional layers may exist between the two illustrated layers). As a specific example, when the first layer in the described or illustrated multilayer structure is referred to as being "on" or "above" the second layer or "on" or "above" the substrate, the first layer may be formed directly on the second layer or substrate, but it may also represent a structure in which one or more other intermediate layers may be present between the first layer and the second layer or substrate.

[0025] Figures 1 to 3 is a diagram showing a semiconductor device and a method for manufacturing the same according to an embodiment of the present disclosure. Specifically, Figure 1 is a plan view showing a redistribution conductive layer of a semiconductor device according to an embodiment of the present disclosure. Figure 2 and Figure 3 is a cross-sectional view showing a semiconductor device according to an embodiment of the present disclosure. Figure 2 and Figure 3 Along Figure 1 A cross-sectional view taken along lines A1-A1' and A2-A2'.

[0026] Reference Figures 1 to 3 , the semiconductor device of this embodiment may include: a lower structure US; a redistribution insulating layer 155, which is formed above the lower structure US; a redistribution conductive layer 160, which is formed above the redistribution insulating layer 155 and is electrically connected to a portion of the lower structure US; and a protective layer 170, which covers the redistribution conductive layer 160 and the redistribution insulating layer 155 and has an opening to expose a portion of the redistribution conductive layer 160.

[0027] The lower structure US may include a semiconductor substrate 100 and a multi-layer conductive pattern and / or insulating pattern formed over one surface of the semiconductor substrate 100. The semiconductor substrate may include a semiconductor material such as silicon. The multi-layer conductive pattern and / or insulating pattern may form an integrated circuit.

[0028] As an example, the lower portion of the lower structure US may include a semiconductor substrate 100 and a first interlayer insulating layer 105 formed over the semiconductor substrate 100. Although not shown, transistors, contacts, or wires, etc. may be formed in the first interlayer insulating layer 105. The upper portion of the lower structure US may include multi-layer conductive patterns 110, 120, 130, and 140, and second to fifth interlayer insulating layers 115, 125, 135, and 145 in which the multi-layer conductive patterns 110, 120, 130, and 140 are embedded. In the present embodiment, the upper portion of the lower structure US may include: a second interlayer insulating layer 115, which is formed above the first interlayer insulating layer 105; a first contact 110, which passes through the second interlayer insulating layer 115 and is connected to a conductive pattern (not shown) located below the second interlayer insulating layer 115; a first pad 120, which is formed above the second interlayer insulating layer 115 and is connected to the first contact 110; a third interlayer insulating layer 125, which is formed above the second interlayer insulating layer 115; and a conductive pattern (not shown) located below the second interlayer insulating layer 115. 15 and surrounding the side surface of the first pad 120; a fourth interlayer insulating layer 135, the fourth interlayer insulating layer 135 covering the first pad 120 and the third interlayer insulating layer 125; a second contact 130, the second contact 130 passing through the fourth interlayer insulating layer 135 and connected to the first pad 120; a second pad 140, the second pad 140 is formed above the fourth interlayer insulating layer 135 and connected to the second contact 130; and a fifth interlayer insulating layer 145, the fifth interlayer insulating layer 145 is formed above the fourth interlayer insulating layer 135 and covers the second pad 140. However, the present embodiment is not limited to the illustrated contents, and various modifications may be made to the shape or structure of the conductive / insulating pattern included in the lower structure US.

[0029] At the same time, the material for the conductive / insulating pattern included in the lower structure US can be appropriately selected so as to meet the desired characteristics of the semiconductor device. In particular, a metal with low resistance such as copper (Cu) can be used as a conductive pattern, and a material with a low dielectric constant (ie, a low-k material) can be used as an insulating layer filled between the conductive patterns. As an example, the first contact 110 and / or the first pad 120 may include copper, and the second interlayer insulating layer 115 and / or the third interlayer insulating layer 125 surrounding the first contact 110 and / or the first pad 120 may include a low-k material having a dielectric constant of 2.7 or less. The fourth interlayer insulating layer 135 and the fifth interlayer insulating layer 145 may include conventional insulating materials (e.g., silicon oxide).

[0030] However, if the semiconductor device is packaged by covering the surface of the semiconductor device with the protective layer 170 and performing a fab-out process in a state where only the lower structure US is formed, moisture may penetrate the fourth interlayer insulating layer 135 and the fifth interlayer insulating layer 145 and reach the second interlayer insulating layer 115 and / or the third interlayer insulating layer 125 including a low-k material that is relatively easy to absorb moisture. Such moisture may cause electrical movement of metal ions, particularly copper ions. Therefore, an electrical short circuit may occur between the first contact 110 and another adjacent contact (not shown) or between the first pad 120 and another adjacent pad (not shown). Therefore, in the present embodiment, in order to prevent such a problem, a redistribution insulating layer 155 and a redistribution conductive layer 160 may be additionally formed above the lower structure US before fab-out.

[0031] The redistribution insulating layer 155 may include an insulating material having a higher dielectric constant and / or a lower moisture absorption rate than a low-k material. As an example, the redistribution insulating layer 155 may include silicon oxide, silicon nitride, or a combination thereof. In addition, the redistribution insulating layer 155 may have a single-layer structure or a multi-layer structure. The redistribution insulating layer 155 may be formed to be relatively thick to prevent moisture penetration. For example, the thickness T3 of the redistribution insulating layer 155 may be greater than the thickness T1 of the fourth interlayer insulating layer 135, the thickness T2 of the fifth interlayer insulating layer 145, and / or the sum of the thicknesses of the fourth interlayer insulating layer 135 and the fifth interlayer insulating layer 145 (i.e., T1+T2).

[0032] The redistribution conductive layer 160 may be formed over the redistribution insulating layer 155. The redistribution conductive layer 160 may be formed to be relatively thick so as to easily transmit a signal. For example, the thickness of the redistribution conductive layer 160 may be the same as or similar to the thickness T3 of the redistribution insulating layer 155. In addition, the redistribution conductive layer 160 may include various conductive materials. For example, the redistribution conductive layer 160 may include a metal such as aluminum (Al). The redistribution conductive layer 160 may have a single-layer structure or a multi-layer structure.

[0033] The redistribution conductive layer 160 may be connected to the uppermost conductive pattern (e.g., the second pad 140) of the lower structure US. To this end, a third contact 150 may be formed in the redistribution insulating layer 155 and the fifth interlayer insulating layer 145 to penetrate the redistribution insulating layer 155 and the fifth interlayer insulating layer 145. The upper surface of the third contact 150 may be connected to the redistribution conductive layer 160, and the lower surface of the third contact 150 may be connected to the second pad 140.

[0034] A portion of the upper surface of the redistribution conductive layer 160 may be exposed through the opening of the protective layer 170. Hereinafter, the exposed portion of the redistribution conductive layer 160 will be referred to as a redistribution pad 160P. The redistribution pad 160P may be a portion to which a connection terminal (not shown) for electrically connecting the semiconductor device of the present embodiment to an external device is bonded.

[0035] A plurality of redistribution pads 160P may be arranged in various forms as required, and various signals or various power levels, etc. may be applied to the redistribution pads 160P. A plurality of redistribution conductive layers 160 may also be arranged in various forms and have various shapes as required. In particular, the redistribution conductive layers 160 may be used to connect the redistribution pads 160P to which the same power source is applied. This is to efficiently supply the power used during the operation of the semiconductor device. For example, Figure 1As shown, the first redistribution pad 160P1 and the second redistribution pad 160P2 to which the same first voltage V1 is applied may be connected to each other through the redistribution conductive layer 160, which includes: a first lead portion L1, which overlaps with the first redistribution pad 160P1 and extends to the left thereof; a second lead portion L2, which overlaps with the second redistribution pad 160P2 and extends to the left thereof; and a plate portion PL, which is disposed on the left side of the first lead portion L1 and the second lead portion L2 and is commonly connected to the first lead portion L1 and the second lead portion L2. In another embodiment, while connecting the redistribution pads 160P to which the same power source is applied, the redistribution conductive layer 160 may have various curved shapes, plate shapes, or combinations thereof. If the semiconductor device of the present embodiment is a semiconductor memory operating at a high speed, a large amount of charge may be instantaneously transferred in an operation of storing or erasing data. At this time, if the charge is not provided immediately, problems may occur in terms of data integrity. However, as in the present embodiment, if the redistribution pads 160P to which the same power is applied are connected to each other to form a power distribution network (PDN), instantaneous voltage changes can be coped with, thereby solving this problem.

[0036] The protective layer 170 can be used to define the redistribution pad 160P while protecting the semiconductor device of the present embodiment. The protective layer 170 can have a single-layer structure or a multi-layer structure including various insulating materials such as insulating polymers. In particular, the protective layer 170 can include a polyimide material such as Polyimide Isoindro Quindzoline (PIQ).

[0037] The protective layer 170 may have a step height due to the step height of the structure below it, that is, the step height between the area where the redistribution conductive layer 160 exists and the area where the redistribution conductive layer 160 does not exist. As described above, because the thickness of the redistribution conductive layer 160 is relatively large, the step height in the protective layer 170 and in the structure below the protective layer 170 may also be relatively large. In addition, due to the step height of the structure disposed below the protective layer 170, the side surface of the protective layer 170 surrounding the redistribution pad 160P may have different slopes. More specifically, in a polymer coating process for forming the protective layer 170, due to the step height of the structure disposed below the protective layer 170, the surface of the coated polymer may have a step height. In the subsequent polymer curing process, the solvent inside the polymer may evaporate, and polymeric coupling may occur, and therefore, the polymer may shrink. As a result, the shape of the polymer may change from a steep ┏ shape to a gentle ∠ shape, and thus, the inclinations of the side surfaces of the polymer may be different from each other. Figure 3 As shown, a difference may occur between the height of the first portion 170-1 of the protective layer 170 and the height of the second portion 170-2 of the protective layer 170 (see H1). The entire first portion 170-1 may be located above the redistribution conductive layer 160 and overlap or contact the redistribution conductive layer 160. On the other hand, a portion of the second portion 170-2 (see A) may overlap or contact the redistribution insulating layer 155, and the remaining portion of the second portion 170-2 (see B) may overlap or contact the redistribution conductive layer 160. Referring again to Figure 1 and Figure 3 , when the redistribution pad 160P is located at the end of the portion extending to the left of the redistribution conductive layer 160, the height of the first portion 170-1 located on the right side of the redistribution pad 160P and the height of the second portion 170-2 surrounding the redistribution pad 160P on the remaining three sides except the right side of the redistribution pad 160P may be significantly different. In addition, the inclination of the inclined side surface S1 of the first portion 170-1 of the protective layer 170 is greater than the inclination of the inclined side surface S2 of the second portion 170-2 of the protective layer 170. Therefore, the problems that may arise and their solutions will be described in more detail below with reference to other embodiments.

[0038] A method for manufacturing the above-mentioned semiconductor device will be briefly described below.

[0039] First, the lower structure US may be formed by repeating the following process: depositing a conductive layer or an insulating layer over the semiconductor substrate 100, and patterning the conductive layer or the insulating layer through a mask and etching process. The final process of forming the lower structure US may be a process of forming the uppermost conductive pattern (e.g., the second pad 140) and forming an insulating layer (e.g., the fifth interlayer insulating layer 145) covering the uppermost conductive pattern.

[0040] Subsequently, a redistribution insulating layer 155 covering the lower structure US may be deposited.

[0041] Subsequently, the redistribution insulating layer 155 and the fifth interlayer insulating layer 145 may be selectively etched to form a contact hole exposing the upper surface of the second pad 140 , and then the contact hole may be filled with a conductive material. As a result, the third contact 150 may be formed.

[0042] Subsequently, a conductive material may be deposited over the redistribution insulating layer 155 in which the third contacts 150 are formed, and selectively etched to form a redistribution conductive layer 160 .

[0043] Subsequently, a protective layer 170 may be formed over the redistribution insulating layer 155 and the redistribution conductive layer 160. The protective layer 170 may have an opening to expose the redistribution pad 160P. The protective layer 170 may be formed by a coating method.

[0044] The above-described processes from the process of forming the lower structure US over the semiconductor substrate 100 to the process of forming the protective layer 170 may be performed in a front-end process.

[0045] The above-mentioned semiconductor device and the method for manufacturing the same have the following advantages.

[0046] First, since a relatively thick redistribution insulating layer and a relatively thick redistribution conductive layer are formed directly above the lower structure, even if the lower structure includes a low-k material susceptible to moisture and a metal (e.g., copper) that is easily ionized by moisture and whose ions are easily mobile, moisture can be prevented from penetrating into the lower structure. As a result, the reliability of the semiconductor device can be ensured.

[0047] In addition, by connecting pads to which the same power source is applied to each other using a redistribution conductive layer, efficient power supply can be performed. As a result, the operating characteristics of the semiconductor device can be improved.

[0048] Meanwhile, as described above, according to the semiconductor device of the present embodiment, the height of the protective layer 170 may vary, and the inclination of the side surface of the protective layer 170 adjacent to the redistribution pad 160P may vary. In this case, in the following Figure 4 Problems may occur in the process of forming the connection terminals described in .

[0049] Figure 4 FIG. 1 is a diagram showing a part of a process for forming a connection terminal to be connected to a semiconductor device according to an embodiment of the present disclosure. Figure 3 , a part of the subsequent process of forming the connection terminals will be described.

[0050] First, the process of forming the connection terminals is briefly described. Figure 3 A photoresist PR is coated over the semiconductor device (that is, over the redistribution pads 160P and the protective layer 170). Subsequently, the photoresist PR over the redistribution pads 160P may be removed by an exposure process. As a result, the photoresist PR may be patterned to expose the redistribution pads 160P. Subsequently, a connection terminal (not shown) such as a bump may be formed by electroplating over the exposed redistribution pads 160P.

[0051] However, referring to Figure 4 , in the process of exposing the photoresist PR, light incident to the first portion 170-1 including the inclined side surface S1 having a large inclination may be partially reflected, and thus, the photoresist PR above the redistribution pad 160P may also be exposed. Figure 4 On the right side of FIG. 1 , even after development, the photoresist PR may remain above the redistribution pad 160P (see the dotted circle). In this case, the subsequent electroplating process may be difficult to proceed normally. As a result, it may be difficult to form the connection terminal.

[0052] Hereinafter, an embodiment capable of solving the problems occurring in the above-mentioned semiconductor device and a method for manufacturing the same will be proposed.

[0053] Figures 5 to 7 is a diagram showing a semiconductor device and a method for manufacturing the same according to another embodiment of the present disclosure. Specifically, Figure 5 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure. Figure 6 is along Figure 5 An enlarged plan view of a portion taken along line A3-A3' and its surroundings. Figure 7 is along Figure 5 For parts that are substantially the same as those in the above-mentioned embodiment, detailed description thereof will be omitted.

[0054] Reference Figures 5 to 7, the semiconductor device of the present embodiment may include: a redistribution insulating layer 255; a redistribution conductive layer 260 formed above the redistribution insulating layer 255; and a protective layer 270, the protective layer 270 covering the redistribution insulating layer 255 and the redistribution conductive layer 260, and having an opening to expose a portion of the redistribution conductive layer 260. The opening of the protective layer 270 may define a redistribution pad 260P of the redistribution conductive layer 260. The redistribution insulating layer 255 may be disposed on a lower structure (see FIG. 1 ) of the above-described embodiment. Figure 2 and Figure 3 The redistribution conductive layer 260 may be electrically connected to the lower structure through the contact 250 penetrating the redistribution insulating layer 255.

[0055] The arrangement of the redistribution pads 260P may be the same as that of the redistribution pads of the above-mentioned embodiment (see Figure 1 In addition, the profile and arrangement of the redistribution conductive layer 260 may be the same as the redistribution conductive layer of the above-mentioned embodiment (see Figure 1 160) is substantially the same in profile and arrangement. However, in the present embodiment, a trench T may be further formed in the redistribution conductive layer 260. The trench T may be formed adjacent to the redistribution pad 260P. In particular, the redistribution conductive layer 260 may include: a pad portion including the redistribution pad 260P; and an extension portion adjacent to the pad portion and extending from the pad portion in at least one direction. In this case, the trench T may be disposed in the extension portion. The position of the trench T will be described in more detail below.

[0056] As an example, see Figure 5 and Figure 6 The portion along line A3-A3', i.e., the portion indicated by P1, of the redistribution conductive layer 260 may include a pad portion P1-1 and an extension portion P1-2. The pad portion P1-1 may overlap with a redistribution pad 260P having four sides (e.g., an upper side, a lower side, a right side, and a left side). The extension portion P1-2 may extend to the right from the pad portion P1-1. The planar area of ​​the pad portion P1-1 of the redistribution conductive layer 260 may be slightly larger than the planar area of ​​the redistribution pad 260P. Therefore, the planar area of ​​the remaining portion of the pad portion P1-1 except for the overlapping portion with the redistribution pad 260P may be relatively small. This may mean that the overlapping area between the protective layer 270 and the pad portion P1-1 in a plan view is relatively small. Therefore, as Figure 7As shown, the second portion 270-2 of the protective layer 270 may have a small overlapping area with the pad portion P1-1, and most of the second portion 270-2 may be located above the redistribution insulating layer 255. Therefore, the height of the second portion 270-2 may be lower, and the inclination of the inclined side surface S4 of the second portion 270-2 may be gentler. For reference, the second portion 270-2 of the protective layer 270 may represent a portion that partially overlaps with the pad portion P1-1 but does not overlap with the extension portion P1-2. On the other hand, because the trench T exists in the extension portion P1-2, the planar area of ​​the extension portion P1-2 may be relatively small. This may mean that the overlapping area between the protective layer 270 and the extension portion P1-2 is relatively small in a plan view. Therefore, as Figure 7 As shown, the first portion 270-1 of the protective layer 270 may have a smaller overlap area with the extension portion P1-2, and most of the first portion 270-1 may be filled in the trench T. Therefore, the height of the first portion 270-1 may be lower, and the inclination of the inclined side surface S3 of the first portion 270-1 may be gentler.

[0057] The depth of the trench T may be substantially the same as the thickness of the redistribution conductive layer 260. Figure 7 In the cross section of FIG. 1 , it appears that the pad portion P1-1 and the extension portion P1-2 of the redistribution conductive layer 260 are separated by the trench T. However, in order to transmit signals and power through the redistribution conductive layer 260, the redistribution conductive layer 260 must not be substantially separated. Therefore, in a plan view, the width of the trench T can be controlled to prevent the electrical / physical separation of the pad portion P1-1 and the extension portion P1-2. That is, as shown in FIG. Figure 6 As shown in the plan view of FIG. 2 , in a direction perpendicular to the extension direction of the redistribution conductive layer 260, that is, in the vertical direction, the width W1 of the trench T may be smaller than the width W2 of the extension portion P1-2. In addition, in the present embodiment, the side surface of the trench T may be surrounded by the extension portion P1-2. In this case, the portions of the extension portion P1-2 located on both sides of the trench T in the vertical direction (see the dotted circle) may be used to connect the pad portion P1-1 and the extension portion P1-2.

[0058] As another example, referring to the portion indicated by P2, two redistribution pads 260P may be arranged adjacent to each other in the horizontal direction. In this case, the redistribution conductive layer 260 may include: a pad portion overlapping the two redistribution pads 260P; and an extension portion extending from the pad portion to the right. The groove T may be provided in the extension portion, that is, on the right side of the right redistribution pad in the two redistribution pads 260P. Because the two redistribution pads 260P are arranged adjacent to each other, the groove T does not need to be provided between the two redistribution pads 260P. However, if the interval between the two redistribution pads 260P increases, so that the plane area of ​​the redistribution conductive layer 260 between the two redistribution pads 260P increases, the groove T may be further formed between the two redistribution pads 260P. In other words, the area between the two redistribution pads 260P may be determined as an extension portion.

[0059] As another example, referring to the portion indicated by P3, the redistribution conductive layer 260 may include a pad portion overlapping the redistribution pad 260P, and two extension portions extending from the pad portion to the left and right sides, respectively. The trenches T may be respectively disposed in the two extension portions. That is, the trenches T may be respectively disposed on the left and right sides of the redistribution pad 260P.

[0060] As another example, referring to the portion indicated by P4, the redistribution conductive layer 260 may include a pad portion overlapping the redistribution pad 260P, and two extension portions extending from the pad portion to the right and lower sides, respectively. In the present embodiment, the two trenches T may be arranged separately from each other in the two extension portions, respectively. That is, the two trenches T may be respectively arranged on the right and lower sides of the redistribution pad 260P. However, the lower portion of the right trench of the two trenches T and the right portion of the lower trench of the two trenches T may be connected to each other to form a single trench.

[0061] As another example, referring to the portion indicated by P5, the redistribution conductive layer 260 may include a pad portion overlapping the redistribution pad 260P, and three extension portions extending from the pad portion to the left, right, and upper sides, respectively. In the present embodiment, the three trenches T may be separately arranged in the three extension portions, respectively. That is, the three trenches T may be respectively arranged on the left, right, and upper sides of the redistribution pad 260P. However, at least two of the three trenches T may be connected to each other.

[0062] As another example, with reference to the portion indicated by P6, the redistribution conductive layer 260 may include a pad portion overlapping the redistribution pad 260P, and four extension portions extending from the pad portion to the left, right, upper and lower sides, respectively. In the present embodiment, the four grooves T may be arranged separately from each other in the four extension portions, respectively. That is, the four grooves T may be arranged on the left, right, upper and lower sides of the redistribution pad 260P, respectively. At least two of the four grooves T may be connected to each other. However, at least some of the four grooves T are not connected to each other. This is because when all four grooves T are connected to form a single groove, the pad portion and the extension portion of the redistribution conductive layer 260 are separated from each other. In other words, if the redistribution pad 260P is completely surrounded by a groove having a closed curve shape or a closed polygonal shape, the redistribution pad 260P may be separated from the redistribution conductive layer 260.

[0063] In the present embodiment, one groove T may be provided in one extension portion. In addition, the groove T may have a planar rectangular shape. However, the present disclosure is not limited thereto, and the number of grooves T provided in one extension portion may be two or more. In addition, various modifications may be made to the planar shape of the groove T. For example, the planar shape of the groove T may be circular, oval, or slit-shaped, etc.

[0064] According to the present embodiment, the step height of the protective layer 270 can be reduced and / or removed by the groove T. In addition, the inclination of the side surface of the protective layer 270 around the redistribution pad 260P can be the same and / or similar, while being relatively gentle. As a result, the problem that occurs during the process of forming the connection terminal in the above-mentioned embodiment, that is, the problem that the photoresist remains on the redistribution pad due to the light reflected on the inclined surface during the exposure process, can be solved. In addition, the advantages of the above-mentioned embodiment can be obtained. That is, the reliability of the semiconductor device can be ensured and the operating characteristics can be improved.

[0065] The semiconductor device of the present embodiment can be manufactured by a method substantially the same as the method of manufacturing the semiconductor device of the above-described embodiment except that a redistributed conductive layer is formed.

[0066] In the present embodiment, the redistribution conductive layer 260 having the trench T may be formed as follows.

[0067] As an example, the redistribution conductive layer 260 may be formed by depositing a conductive material over the redistribution insulating layer 255 and selectively etching the conductive material. At this time, selective etching may be performed by using a mask that covers the area defined by the outline of the redistribution conductive layer 260 and opens the area where the trench T is to be formed.

[0068] Alternatively, as another example, a conductive material may be deposited on the redistribution insulating layer 255 and selectively etched to form the conductive material. Figure 1 The redistribution conductive layer 160 has the same profile as the redistribution conductive layer 160. And then, the redistribution conductive layer may be additionally etched using a mask opening a region where the trench T is to be formed.

[0069] Figure 8 FIG. 1 is a diagram showing a state in which a connection terminal is further formed in a semiconductor device according to another embodiment of the present disclosure.

[0070] Reference Figure 8 , in addition to the above Figures 5 to 7 In addition to the components of the semiconductor device, the semiconductor device of this embodiment may further include a connection terminal 280.

[0071] The connection terminals 280 may be formed to be connected to the respective redistribution pads 260P. Figure 5 As shown, when a plurality of redistribution pads 260P are arranged, connection terminals 280 may be connected to at least some of the redistribution pads 260P. The semiconductor device may be electrically connected to an external device (not shown) through the connection terminals 280 and may receive signals, power, etc.

[0072] The connection terminal 280 may be formed by coating a photoresist on the redistribution pad 260P and the protective layer 270, patterning the photoresist through an exposure process so that the surface of the redistribution pad 260P is exposed, and performing an electroplating process. In the present embodiment, since the height of the protective layer 270 around the redistribution pad 260P is low and the inclination of its side surface is gentle, less light may be reflected on the inclined side surface during the exposure process, and therefore, the patterning of the photoresist may be easily performed. As a result, the connection terminal 280 may be easily formed.

[0073] In the present embodiment, the connection terminal 280 may have a pillar bump shape. However, the present disclosure is not limited thereto, and various types of connectors such as solder balls or bonding wires may be used as the connection terminal 280.

[0074] Figures 9 to 11 is a diagram showing a semiconductor device and a method for manufacturing the same according to another embodiment of the present disclosure. Specifically, Fig. 9 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure. Fig.10 is along Fig. 9 An enlarged plan view of a portion taken along line A4-A4' and its surroundings. Fig.11 is along Fig. 9For parts that are substantially the same as those in the above-mentioned embodiment, detailed description thereof will be omitted.

[0075] Reference Figures 9 to 11 , the semiconductor device of the present embodiment may include: a redistribution insulating layer 355; a redistribution conductive layer 360, which is formed above the redistribution insulating layer 355 and includes a redistribution pad 360P; and a protective layer 370, which covers the redistribution insulating layer 355 and the redistribution conductive layer 360, while exposing the redistribution pad 360P. The redistribution pad 360P may be a part of the redistribution conductive layer 360, and may be defined as a part exposed by the protective layer 370 and not covered by the protective layer 370. The redistribution conductive layer 360 may be electrically connected to a lower structure (not shown) through a contact 350 penetrating the redistribution insulating layer 355.

[0076] The redistribution conductive layer 360 may include: a pad portion including a redistribution pad 360P; and an extension portion adjacent to the pad portion and extending from the pad portion in at least one direction. In this case, the trench T' may be provided in the extension portion. In the present embodiment, the depth of the trench T' may be less than the thickness of the redistribution conductive layer 360, and therefore, there is no limitation on the width of the trench T'. This will be described in detail below.

[0077] As an example, see Fig. 9 and Fig.10 The portion along line A4-A4', that is, the portion indicated by P1', the redistribution conductive layer 360 may include a pad portion P1'-1 and an extension portion P1'-2. The pad portion P1'-1 may overlap with the redistribution pad 360P, which has four sides (e.g., an upper side, a lower side, a right side, and a left side). The extension portion P1'-2 may extend to the right from the pad portion P1'-1. The groove T' may be provided in the extension portion P1'-2. The planar area of ​​the pad portion P1'-1 may be slightly larger than the planar area of ​​the redistribution pad 360P. Therefore, in a plan view, the overlapping area of ​​the protective layer 370 and the pad portion P1'-1 may be relatively small. In addition, because there is a groove T' in the extension portion P1'-2, the overlapping area of ​​the protective layer 370 and the extension portion P1'-2 may be relatively small in a plan view. Therefore, as Fig.11As shown, the second portion 370-2 of the protective layer 370 may have a smaller overlap area with the pad portion P1'-1, and most of the second portion 370-2 may be disposed above the redistribution insulating layer 355. As a result, the height of the second portion 370-2 of the protective layer 370 may be lower, and the inclination of its inclined side surface S4' may be gentler. In addition, since the first portion 370-1 of the protective layer 370 has a smaller overlap area with the extension portion P1'-2, and most of the first portion 370-1 is filled in the trench T', the height of the first portion 370-1 of the protective layer 370 may be lower, and the inclination of its inclined side surface S3' may be gentler.

[0078] Here, the depth D1 of the trench T' may be less than the thickness D2 of the redistribution conductive layer 360. That is, the redistribution conductive layer 360 may remain at a predetermined thickness below the trench T'. Therefore, regardless of the planar shape of the trench T', the pad portion P1'-1 and the extension portion P1'-2 may be electrically and physically connected to each other. For example, Fig.10 As shown in the plan view of FIG. 3 , in a direction perpendicular to the extension direction of the redistribution conductive layer 360, for example, in the vertical direction, the width W1' of the trench T' may be the same as the width W2' of the extension portion P1'-2. In this case, in the plan view, it appears that the pad portion P1'-1 and the extension portion P1'-2 are separated from each other. However, the pad portion P1'-1 and the extension portion P1'-2 may be connected to each other through the remaining portion of the redistribution conductive layer 360 below the trench T'.

[0079] As another example, with reference to the portion indicated by P2', two redistribution pads 360P may be arranged adjacent to each other in the horizontal direction. In this case, the redistribution conductive layer 360 may include a pad portion overlapping the two redistribution pads 360P, and an extension portion extending to the right from the pad portion. The groove T' may be provided in the extension portion, that is, on the right side of the right redistribution pad of the two redistribution pads 360P. In a plan view, in a direction perpendicular to the extension direction of the redistribution conductive layer 360, that is, in a vertical direction, the width of the groove T' may be the same as the width of the extension portion. Therefore, in a plan view, it appears that the redistribution pad 360P is separated from the redistribution conductive layer 360 via the groove T'. However, since the depth of the groove T' is less than the thickness of the redistribution conductive layer 360, the redistribution pad 360P may not actually be separated from the redistribution conductive layer 360.

[0080] As another example, referring to the portion indicated by P3', the redistribution conductive layer 360 may include a pad portion overlapping the redistribution pad 360P, and two extension portions extending from the pad portion to the left and right sides, respectively. The grooves T' may be respectively disposed in the two extension portions. That is, the grooves T' may be respectively disposed on the left and right sides of the redistribution pad 360P. Similar to the P1' portion, the width of the grooves T' may be the same as the width of the extension portion, and the depth of the grooves T' may be less than the thickness of the redistribution conductive layer 360. Therefore, the redistribution pad 360P may not be separated from the redistribution conductive layer 360.

[0081] As another example, referring to the portion indicated by P4', the redistribution conductive layer 360 may include a pad portion overlapping the redistribution pad 360P, and two extension portions extending from the pad portion to the right and lower sides, respectively. In the present embodiment, the groove T' may be provided in the two extension portions to have a shape that completely surrounds the redistribution pad 360P. That is, the groove T' may have a ┘ shape corresponding to the right and lower sides of the redistribution pad 360P. In this case, it appears that the redistribution pad 360P is separated from the redistribution conductive layer 360 via the groove T'. However, since the depth of the groove T' is less than the thickness of the redistribution conductive layer 360, the redistribution pad 360P may not be separated from the redistribution conductive layer 360.

[0082] As another example, referring to the portion indicated by P5', the redistribution conductive layer 360 may include a pad portion overlapping the redistribution pad 360P, and three extension portions extending from the pad portion to the left, right, and upper sides, respectively. In the present embodiment, the groove T' may be provided in these three extension portions to have a shape that completely surrounds the redistribution pad 360P. That is, the groove T' may have a ┌┐ shape corresponding to the left, right, and upper sides of the redistribution pad 360P. Similar to the P4' portion, because the depth of the groove T' is less than the thickness of the redistribution conductive layer 360, the redistribution pad 360P may not be separated from the redistribution conductive layer 360.

[0083] As another example, referring to the portion indicated by P6', the redistribution conductive layer 360 may include a pad portion overlapping the redistribution pad 360P, and four extension portions extending from the pad portion to the left, right, upper and lower sides, respectively. In the present embodiment, the groove T' may be provided in the four extension portions to have a shape that completely surrounds the redistribution pad 360P. That is, the groove T' may have a □ shape corresponding to the left, right, upper and lower sides of the redistribution pad 360P. Similar to the P4' portion, since the depth of the groove T' is less than the thickness of the redistribution conductive layer 360, the redistribution pad 360P may not be separated from the redistribution conductive layer 360.

[0084] In the present embodiment, the step height of the protective layer 370 can be reduced and / or removed by the trench T', and the inclination of the side surface of the protective layer 370 around the redistribution pad 360P can be the same and / or similar, while being relatively gentle. As a result, the advantages of the above-mentioned embodiment can be obtained. That is, the reliability of the semiconductor device can be ensured, and the operating characteristics can be improved.

[0085] The semiconductor device of the present embodiment can be manufactured by a method substantially the same as the method of manufacturing the semiconductor device of the above-described embodiment except that a redistributed conductive layer is formed.

[0086] In this embodiment, the redistribution conductive layer 360 having the trench T′ may be formed as follows.

[0087] For example, the conductive material may be deposited over the redistribution insulating layer 355 and selectively etched to form the conductive material. Figure 1 The redistribution conductive layer 160 has the same profile as the redistribution conductive layer. And then, the redistribution conductive layer can be further etched using a mask that opens the area where the trench T' is to be formed. At this time, the etching depth can be adjusted to form a trench T' having a depth less than the thickness of the redistribution conductive layer.

[0088] Figure 12 to Figure 14 is a diagram showing a semiconductor device and a method for manufacturing the same according to another embodiment of the present disclosure. Specifically, Fig.12 is a plan view showing a redistribution conductive layer of a semiconductor device according to another embodiment of the present disclosure. Fig.13 is along Fig.12 An enlarged plan view of a portion taken along line A5-A5' and its surroundings. Fig.14 is along Fig.12 For parts that are substantially the same as those in the above-mentioned embodiment, detailed description thereof will be omitted.

[0089] Reference Figure 12 to Figure 14 The semiconductor device of this embodiment may include a redistribution insulating layer 455; a redistribution conductive layer 460, which is formed above the redistribution insulating layer 455 and includes a redistribution pad 460P; and a protective layer 470, which covers the redistribution insulating layer 455 and the redistribution conductive layer 460 while exposing the redistribution pad 460P.

[0090] The redistribution conductive layer 460 may include: a pad portion including a redistribution pad 460P; and an extension portion adjacent to the pad portion and extending from the pad portion in at least one direction. A trench T” may be formed in the extension portion of the redistribution conductive layer 460. The position of the trench T” will be described in more detail below.

[0091] As an example, refer to Fig.12 and Fig.13 In the portion of line A5-A5', i.e., the portion indicated by P1", the redistribution conductive layer 460 may include a pad portion P1"-1 and an extension portion P1"-2. The pad portion P1"-1 may overlap with a redistribution pad 460P having four sides (e.g., an upper side, a lower side, a right side, and a left side). The extension portion P1"-2 may extend from the pad portion P1"-1 to the right. The groove T" may be provided in the extension portion P1"-2. The planar area of ​​the pad portion P1"-1 may be slightly larger than the planar area of ​​the redistribution pad 460P. Therefore, in a plan view, an overlapping area of ​​the protective layer 470 and the pad portion P1"-1 may be relatively small. In addition, because there is a groove T" in the extension portion P1"-2, an overlapping area of ​​the protective layer 470 and the extension portion P1"-2 may be relatively small in a plan view. Therefore, as Fig.14 As shown, the second portion 470-2 of the protective layer 470 can have a smaller overlapping area with the pad portion P1"-1, and most of the second portion 470-2 can be located above the redistribution insulation layer 455. As a result, the height of the second portion 470-2 of the protective layer 470 can be lower, and the inclination of its inclined side surface S4" can be gentler. In addition, the first portion 470-1 of the protective layer 470 can have a smaller overlapping area with the extension portion P1"-2, and most of the first portion 470-1 can be filled in the trench T". As a result, the height of the first portion 470-1 of the protective layer 470 can be lower, and the inclination of its inclined side surface S3" can be gentler.

[0092] Here, in a plan view, the trench T” may include a first trench T1” and a second trench T2” located on both sides in a direction perpendicular to the extension direction of the redistribution conductive layer 460 (e.g., in a vertical direction). However, because the width W1” of the trench T” is smaller than the width W2” of the extension portion P1”-2, a portion of the extension portion P1”-2 may exist between the first trench T1” and the second trench T2” (see the dotted circle) for connecting the pad portion P1”-1 and the extension portion P1”-2. That is, even if the depth of the trench T” is the same as the thickness of the redistribution conductive layer 460, the electrical and physical connection between the pad portion P1”-1 and the extension portion P1”-2 may be maintained.

[0093] In particular, the portion of the extension portion P1"-2 indicated by the dotted circle can be located in the center in the vertical direction. In other words, the width of the first trench T1" and the width of the second trench T2" can be the same in the vertical direction. As in the present embodiment, when the pad portion P1"-1 and the extension portion P1"-2 are connected to each other in the center, the electrical signal path (see the dotted arrow) passing through the redistribution conductive layer 460 can have the shortest distance. Therefore, the speed and efficiency of signal transmission can be improved.

[0094] As another example, referring to the portion indicated by P2", two redistribution pads 460P may be arranged adjacent to each other in the horizontal direction. In this case, the redistribution conductive layer 460 may include a pad portion overlapping the two redistribution pads, and an extension portion extending to the right from the pad portion. The groove T" may be provided in the extension portion, that is, on the right side of the right redistribution pad among the two redistribution pads 460P. Here, the groove T" may include two grooves provided on both sides and having a portion of the extension portion inserted therebetween. The portion of the extension portion may be centered in the vertical direction. That is, the shape of the groove T" may be the same as that of the groove T". Fig.13 The shapes described in are basically the same.

[0095] As another example, referring to the portion indicated by P3", the redistribution conductive layer 460 may include a pad portion overlapping the redistribution pad 460P, and two extension portions extending from the pad portion to the left and right sides, respectively. The two trenches T" may be respectively disposed in the two extension portions. That is, the two trenches T" may be respectively disposed on the left and right sides of the redistribution pad 460P. Here, each of the two trenches T" may include two trenches disposed on both sides with a portion of the extension portion inserted therebetween. The portion of the extension portion may be centered in the vertical direction. That is, the shape of each of the two trenches T" may be the same as that of the redistribution pad 460P. Fig.13 The shapes described in are basically the same.

[0096] As another example, referring to the portion indicated by P4", the redistribution conductive layer 460 may include a pad portion overlapping the redistribution pad 460P, and two extending portions extending from the pad portion to the right and lower sides, respectively. The trenches T" may be respectively disposed in the two extending portions. That is, the trenches T" may be respectively disposed at the lower side and the right side of the redistribution pad 460P. For ease of description, in Fig.12The P4" portion is enlarged and shown in the figure, and with reference thereto, the groove T" may include a lower groove TA" arranged on the lower side of the redistribution pad 460P and a right groove TB" arranged on the right side of the redistribution pad 460P. Here, the lower groove TA" may be divided into two parts in a direction perpendicular to the extension direction (i.e., in the horizontal direction). The two parts are referred to as the left part TA1" and the right part TA2". A part of the extension part (see ①) may be inserted between the left part TA1" and the right part TA2". In addition, the right groove TB" may be divided into two parts in a direction perpendicular to the extension direction (i.e., in the vertical direction). The two parts are referred to as the upper part TB1" and the lower part TB2". A part of the extension part (see ②) may be inserted between the upper part TB1" and the lower part TB2". Unlike the parts indicated by P1" to P3", the part indicated by P4" may have two adjacent extension parts, i.e., a lower extension part and a right extension part. In this case, the adjacent parts in each part of the groove T" may be connected to each other. That is, the right side portion TA2" of the lower trench TA" and the lower side portion TB2" of the right trench TB" may be connected to each other, thereby surrounding the right / lower corner of the redistribution pad 460P in a ┘ shape. In the present embodiment, since the electrical signal is transmitted to the center of the redistribution pad 460P, the signal path may have the shortest distance.

[0097] As another example, referring to the portion indicated by P5", the redistribution conductive layer 460 may include a pad portion overlapping the redistribution pad 460P, and three extension portions extending from the pad portion to the left, right, and upper sides, respectively. The grooves T" may be respectively disposed in the three extension portions. That is, the grooves T" may be respectively disposed on the left, upper, and right sides of the redistribution pad 460P. Each groove T" may be divided into two parts in a direction perpendicular to the extension direction, with a portion of the extension portion inserted between the two parts. In the portion indicated by P5", the left extension portion and the upper extension portion may be adjacent to each other, and the right extension portion and the upper extension portion may be adjacent to each other. In this case, adjacent portions of the portions of the groove T" may be connected to each other. That is, the upper portion of the groove T" located on the left side of the redistribution pad 460P and the left portion of the groove T" located on the upper side of the redistribution pad 460P may be connected to each other, thereby surrounding the left / upper corner of the redistribution pad 460P with a ┌ shape. In addition, the upper portion of the groove T" located on the right side of the redistribution pad 460P and the right portion of the groove T" located on the upper part of the redistribution pad 460P can be connected to each other, thereby surrounding the right / upper corner of the redistribution pad 460P in a ┐ shape.

[0098] As another example, referring to the portion indicated by P6", the redistribution conductive layer 460 may include a pad portion overlapping the redistribution pad 460P, and four extension portions extending from the pad portion to the left, right, lower and upper sides, respectively. The grooves T" may be respectively disposed in the four extension portions. That is, the grooves T" may be respectively disposed on the left, right, lower and upper sides of the redistribution pad 460P. Each groove T" may be divided into two parts in a direction perpendicular to the extension direction, with a portion of the extension portion inserted between the two parts. In the portion indicated by P6", the upper extension portion may be adjacent to the left extension portion and the right extension portion, and the lower extension portion may be adjacent to the left extension portion and the right extension portion. In this case, adjacent portions in each portion of the groove T" may be connected to each other. That is, the upper portion of the groove T” located on the right side of the redistribution pad 460P and the right portion of the groove T” located on the upper side of the redistribution pad 460P can be connected to each other, thereby surrounding the right / upper corner of the redistribution pad 460P with a ┐ shape. In addition, the lower portion of the groove T” located on the right side of the redistribution pad 460P and the right portion of the groove T” located on the lower side of the redistribution pad 460P can be connected to each other, thereby surrounding the right / lower corner of the redistribution pad 460P with a ┘ shape. In addition, the lower portion of the groove T” located on the left side of the redistribution pad 460P and the left portion of the groove T” located on the lower side of the redistribution pad 460P can be connected to each other, thereby surrounding the left / lower corner of the redistribution pad 460P with a └ shape.

[0099] Meanwhile, in the above-mentioned embodiment, the case where the redistribution pad has a rectangular shape in a plan view has been described. However, the shape of the redistribution pad can be variously modified, for example, modified to a polygon. Therefore, the position and shape of the groove can be variously modified. This will refer to FIG. 15A to FIG. 15C Description is given as an example.

[0100] Fig.15A , Fig. 15B and Fig. 15C 5 is a plan view showing the shape of a redistribution pad and a groove according to another embodiment of the present disclosure. In this embodiment, in the plan view, the redistribution pad 560P may have an octagonal shape having a first side to an eighth side. In addition, the extended portion of the redistribution conductive layer 560 may surround the redistribution pad 560P.

[0101] Reference Fig.15A, the grooves T"' can be set to correspond to the first to eighth sides of the redistribution pad 560P, respectively. The grooves T"' can be separated from each other. Alternatively, at least two of the grooves T"' can be connected to each other. However, if the depth of the groove T"' is the same as the thickness of the redistribution conductive layer 560, all the grooves T"' cannot be connected.

[0102] Reference Fig. 15B The trench T″′ may have a shape surrounding the entire side surface of the redistribution pad 560P. In this case, in order to connect the redistribution pad 560P and the redistribution conductive layer 560 , the depth of the trench T″′ may be smaller than the thickness of the redistribution conductive layer 560 .

[0103] Reference Fig. 15C , a groove T"' may be provided to surround each of the eight corners of the redistribution pad 560P. A portion of the redistribution conductive layer 560 may exist between adjacent grooves T"' to be connected to the redistribution pad 560P. The portion of the redistribution conductive layer 560 between adjacent grooves T"' may correspond to the center of the redistribution pad 560P. This is to make the electrical signal path from the redistribution conductive layer 560 to the redistribution pad 560P have the shortest distance.

[0104] However, with FIG. 15A to FIG. 15C Different from the embodiment of the present invention, the extended portions of the redistribution conductive layer 560 may extend from the first side to some of the eighth side of the redistribution pad 560P. In this case, the trench T''' may be provided only in these extended portions.

[0105] Fig.16 A block diagram illustrating an electronic system including a memory card 7800 employing at least one of the semiconductor packages according to the embodiments is shown. The memory card 7800 includes a memory 7810 such as a nonvolatile memory device and a memory controller 7820. The memory 7810 and the memory controller 7820 may store data or read out stored data. At least one of the memory 7810 and the memory controller 7820 may include at least one of the semiconductor packages according to the described embodiments.

[0106] The memory 7810 may include a nonvolatile memory device to which the technology of the embodiments of the present disclosure is applied. The memory controller 7820 may control the memory 7810 to read out stored data or store data in response to a read / write request from the host 7830 .

[0107] Fig.17A block diagram illustrating an electronic system 8710 including at least one of the semiconductor packages according to the described embodiments is shown. The electronic system 8710 may include a controller 8711, an input / output device 8712, and a memory 8713. The controller 8711, the input / output device 8712, and the memory 8713 may be coupled to each other via a bus 8715 that provides a path through which data moves.

[0108] In one embodiment, the controller 8711 may include one or more microprocessors, digital signal processors, microcontrollers, and / or logic devices capable of performing the same functions as these components. The controller 8711 or the memory 8713 may include one or more semiconductor packages according to an embodiment of the present disclosure. The input / output device 8712 may include at least one selected from a keypad, a keyboard, a display device, a touch screen, etc. The memory 8713 is a device for storing data. The memory 8713 may store data and / or commands to be executed by the controller 8711, etc.

[0109] The memory 8713 may include a volatile memory device such as a DRAM and / or a non-volatile memory device such as a flash memory. For example, the flash memory may be installed in an information processing system such as a mobile terminal or a desktop computer. The flash memory may constitute a solid state disk (SSD). In this case, the electronic system 8710 may stably store a large amount of data in the flash memory system.

[0110] The electronic system 8710 may further include an interface 8714, which is configured to send data to and receive data from a communication network. The interface 8714 may be of a wired or wireless type. For example, the interface 8714 may include an antenna or a wired or wireless transceiver.

[0111] The electronic system 8710 may be implemented as a mobile system, a personal computer, an industrial computer, or a logic system that performs various functions. For example, the mobile system may be any one of a personal digital assistant (PDA), a portable computer, a tablet computer, a mobile phone, a smart phone, a wireless phone, a laptop computer, a memory card, a digital music system, and an information transmission / reception system.

[0112] If electronic system 8710 represents a device capable of performing wireless communications, electronic system 8710 can be used in a communication system using CDMA (Code Division Multiple Access), GSM (Global System for Mobile Communications), NADC (North American Digital Cellular), E-TDMA (Enhanced Time Division Multiple Access), WCDMA (Wideband Code Division Multiple Access), CDMA2000, LTE (Long Term Evolution) or Wibro (Wireless Broadband Internet) technology.

[0113] Although various embodiments have been described for illustrative purposes, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present disclosure as defined by the following claims.

[0114] CROSS-REFERENCE TO RELATED APPLICATIONS

[0115] This application claims priority to Korean Patent Application No. 10-2019-0175172, filed on December 26, 2019, and Korean Patent Application No. 10-2020-0033258, filed on March 18, 2020, which are hereby incorporated by reference in their entirety.

Claims

1. A semiconductor device, comprising: Substructure; a redistribution insulation layer, the redistribution insulation layer being disposed above the lower structure; a redistribution conductive layer, the redistribution conductive layer being disposed above the redistribution insulating layer and electrically connected to a portion of the lower structure, the redistribution conductive layer comprising a redistribution pad; as well as a protective layer, the protective layer covering the redistribution insulating layer and the redistribution conductive layer and exposing the redistribution pads, Wherein, the redistribution conductive layer includes a groove arranged adjacent to the redistribution pad, wherein a portion of the protective layer fills the groove, The redistribution conductive layer includes a pad portion and an extension portion, the pad portion includes the redistribution pad, and the extension portion extends from the pad portion along at least one direction. wherein the groove is provided in the extension portion, and Wherein, the pad portion and the extension portion are physically and electrically connected to each other.

2. The semiconductor device according to claim 1, wherein The depth of the trench is the same as the thickness of the redistribution conductive layer.

3. The semiconductor device according to claim 2, wherein: In a plan view, in a direction perpendicular to an extending direction of the extending portion, a width of the groove is smaller than a width of the extending portion, and all side surfaces of the groove are surrounded by the extending portion.

4. The semiconductor device according to claim 2, wherein: The pad portion includes a first side to an Nth side, where N is a natural number, wherein the extension portion includes a first extension portion to a kth extension portion extending from the first side to the kth side of the first side to the Nth side of the pad portion, respectively, wherein k is a natural number greater than or equal to 2 and less than or equal to N, and The grooves include a first groove to a kth groove respectively arranged in the first extension portion to the kth extension portion.

5. The semiconductor device according to claim 4, wherein: The first to k-th trenches are separated from each other.

6. The semiconductor device according to claim 4, wherein: Two or more adjacent grooves among the first groove to the kth groove are connected to each other, and At least some of the first to k-th trenches are not connected to each other.

7. The semiconductor device according to claim 2, wherein: In a plan view, the groove is divided into two parts in a direction perpendicular to the extending direction of the extending portion, and a part of the extending portion is inserted between the two parts.

8. The semiconductor device according to claim 7, wherein: The two portions of the groove have the same width in a direction perpendicular to the extending direction.

9. The semiconductor device according to claim 7, wherein: The pad portion includes a first side to an Nth side, where N is a natural number, The extending portion includes a first extending portion and a second extending portion extending from the first side and the second side of the pad portion respectively, and the first side and the second side of the pad portion are adjacent to each other. wherein the grooves include a first groove and a second groove formed in the first extension portion and the second extension portion, respectively, wherein the first groove is divided into two parts in a direction perpendicular to the extending direction of the first extending portion, a part of the first extending portion is inserted between the two parts, and The second groove is divided into two parts in a direction perpendicular to an extending direction of the second extending portion, and a part of the second extending portion is inserted between the two parts.

10. The semiconductor device according to claim 9, wherein One of the two portions of the first trench adjacent to the second side of the pad portion and one of the two portions of the second trench adjacent to the first side of the pad portion are connected to each other.

11. The semiconductor device according to claim 7, wherein: The pad portion includes a first side to an Nth side, where N is a natural number, wherein the extension portion comprises a first extension portion and a second extension portion extending from the first side edge and the second side edge of the pad portion respectively, the first side edge and the second side edge of the pad portion are adjacent to each other, and The groove surrounds a corner of the pad portion defined by the first side and the second side.

12. The semiconductor device according to claim 1, wherein The depth of the trench is less than the thickness of the redistribution conductive layer.

13. The semiconductor device according to claim 12, wherein: The pad portion and the extension portion are physically and electrically connected to each other through a portion of the redistribution conductive layer located below the trench.

14. The semiconductor device according to claim 12, wherein: In a direction perpendicular to an extending direction of the extending portion, a width of the groove is the same as a width of the extending portion.

15. The semiconductor device according to claim 12, wherein: The pad portion includes a first side to an Nth side, where N is a natural number, wherein the extension portion extends from the first side edge of the pad portion to the adjacent first side edge to the kth side edge among the Nth side edges, wherein k is a natural number greater than or equal to 2 and less than or equal to N, and The groove has a shape surrounding the first side to the kth side of the pad portion in the extension portion.

16. The semiconductor device according to claim 1, wherein The lower structure includes a conductive pattern and an insulating layer covering the conductive pattern, the conductive pattern and the insulating layer are arranged at the uppermost portion of the lower structure, and Wherein, the semiconductor device further comprises: A contact penetrates the redistribution insulating layer and the insulating layer to be connected to the conductive pattern.

17. The semiconductor device according to claim 16, wherein: The thickness of the redistribution insulation layer is greater than the thickness of the insulation layer.

18. The semiconductor device according to claim 1, wherein The lower structure includes a multi-layer conductive pattern and a multi-layer insulating layer, the multi-layer conductive pattern is embedded in the multi-layer insulating layer, and At least one insulating layer in the plurality of insulating layers has a lower dielectric constant than that of the redistribution insulating layer.

19. The semiconductor device according to claim 1, wherein The lower structure includes a multi-layer conductive pattern and a multi-layer insulating layer, the multi-layer conductive pattern is embedded in the multi-layer insulating layer, and At least one insulating layer in the plurality of insulating layers has a higher moisture absorption rate than the redistribution insulating layer.

20. The semiconductor device according to claim 18, wherein A conductive pattern of the multi-layered conductive pattern embedded in an insulating layer having a lower dielectric constant than the redistribution insulating layer includes copper.

21. The semiconductor device according to claim 1, wherein The redistribution pads include a first redistribution pad and a second redistribution pad to which the same power source is applied, and Wherein, the redistribution conductive layer connects the first redistribution pad and the second redistribution pad.

22. The semiconductor device according to claim 1, wherein The protective layer includes an insulating polymer material.

23. The semiconductor device according to claim 1, further comprising: A connection terminal is connected to the redistribution pad.

24. A method for manufacturing a semiconductor device, the method comprising the steps of: forming a substructure; forming a redistribution insulation layer above the lower structure; forming a redistribution conductive layer over the redistribution insulating layer, the redistribution conductive layer including a trench formed therein and including a redistribution pad; as well as forming a protection layer, the protection layer covering the redistribution insulating layer and the redistribution conductive layer and exposing the redistribution pads, Wherein, the groove is arranged adjacent to the redistribution pad, and A portion of the protection layer fills the trench, The redistribution conductive layer includes a pad portion and an extension portion, the pad portion includes the redistribution pad, and the extension portion extends from the pad portion along at least one direction. wherein the groove is provided in the extension portion, and Wherein, the pad portion and the extension portion are physically and electrically connected to each other.

25. The method according to claim 24, wherein: The step of forming the lower structure includes the steps of forming a multi-layer conductive pattern and a multi-layer insulating layer.

26. The method according to claim 25, further comprising the steps of: Before forming the redistribution conductive layer, forming a contact member penetrating the redistribution insulating layer and the uppermost insulating layer among the multi-layer insulating layers to be connected to the uppermost conductive pattern among the multi-layer conductive patterns, Wherein, the redistribution conductive layer is connected to the contact element.

27. The method according to claim 26, wherein: The step of forming the redistribution insulating layer includes the step of depositing an insulating material so that the insulating material has a thickness greater than a thickness of the uppermost insulating layer.

28. The method of claim 24, wherein: The step of forming the redistribution conductive layer comprises the following steps: depositing a conductive material over the redistribution insulating layer; and The conductive material is etched by using a mask that leaves openings at areas where the trenches are to be formed while covering areas defined by the outline of the redistribution conductive layer.

29. The method of claim 24, wherein: The step of forming the redistribution conductive layer comprises the following steps: depositing a conductive material over the redistribution insulating layer; etching the conductive material by using a mask covering an area defined by an outline of the redistribution conductive layer; and The etched conductive material is further etched by using a mask leaving openings at regions where the trenches are to be formed.

30. The method according to claim 24, further comprising the steps of: After forming the protection layer, forming a connection terminal over the redistribution pad to connect the connection terminal to the redistribution pad.

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