A magnetically controlled fluid rheostat device

Abstract

The present invention relates to the technical field of varistors, and provides a magnetically controlled fluid varistor device, comprising: a lower pole plate, a micro-nano electrode is etched on the lower pole plate, and a first terminal and a second terminal electrically connected to the micro-nano electrode are respectively provided at both ends of the lower pole plate; a flow channel chip, a groove is provided on one side of the flow channel chip, the lower pole plate is provided on one side of the groove and connected to the flow channel chip, and the groove and the lower pole plate form a storage cavity; a fluid, the fluid is injected into the storage cavity, the fluid contacts the micro-nano electrode, and an external magnetic field cooperates with the fluid to adjust the resistance value of the varistor device. The present invention injects fluid into the storage cavity formed by the flow channel chip and the lower pole plate, and adjusts the resistance value of the varistor device in a non-contact manner by cooperating with the external magnetic field and the fluid in the storage cavity, which avoids mechanical wear and poor contact, and is also suitable for micro-complex space working conditions, greatly increasing the application range of the varistor device, and the overall structure is simple, compact, and easy to operate.

Description

Technical Field

[0001] The present invention relates to the technical field of varistors, and more specifically to a magnetically controlled fluid varistor device. Background Art

[0002] With the development of micro-electromechanical systems, people are increasingly pursuing miniaturization and integration of sensor devices. Resistors are one of the most common application products in electronic components. Resistors can limit current, protect circuits, and distribute voltage in circuits. They are widely used in precision circuits. Rheostats can be used to adjust the size of resistance, usually on a longer resistance, using physical contact to drive the contact point to move to change the resistance. However, in the traditional physical contact method, when the pressure is high, the contact point is severely worn and the life of the rheostat is short. When the pressure is low, the contact point is poorly contacted, which can easily cause circuit breakage. In addition, when facing some micro-complex space conditions, it is difficult to use physical contact to drive. Summary of the invention

[0003] The purpose of the present invention is to provide a magnetically controlled fluid resistor device to solve the technical problems in the prior art of using physical contact in the resistor, such as severe wear of the contact points, poor contact of the contact points, and inability to cope with micro-complex space working conditions.

[0004] To achieve the above object, the technical solution adopted by the present invention is:

[0005] The present invention provides a magnetically controlled fluid rheostat device, comprising:

[0006] A lower electrode plate, on which a micro-nano electrode is etched, and two ends of the lower electrode plate are respectively provided with a first terminal and a second terminal electrically connected to the micro-nano electrode;

[0007] A flow channel chip, wherein a groove is provided on one side of the flow channel chip, the lower electrode plate is provided on one side of the groove and connected to the flow channel chip, and the groove and the lower electrode plate form a storage cavity;

[0008] The fluid is injected into the storage cavity, the fluid contacts the micro-nano electrode, and the external magnetic field cooperates with the fluid to adjust the resistance value of the variable resistor device.

[0009] According to the above-mentioned magnetron fluid resistor device, the fluid comprises:

[0010] Copper particles, which sink to the surface of the lower electrode plate and contact the micro-nano electrode;

[0011] A magnetic fluid, wherein the magnetic fluid controls the copper particles to form a conductive chain structure under the action of an external magnetic field, and the conductive chain structure is parallel to the direction of the external magnetic field.

[0012] According to the magnetron fluid resistor device described above, the copper particles are non-spherical irregular conductive metal particles, and the size of the copper particles is 1 to 20 microns.

[0013] According to the above-mentioned magnetron fluid resistor device, when the resistance value of the resistor device is minimum, the direction of the external magnetic field is the connection direction of the first terminal and the second terminal;

[0014] When the resistance value of the variable resistor device is the largest, the direction of the external magnetic field is a perpendicular direction to a line connecting the second wiring terminal and the first wiring terminal.

[0015] According to the magnetron fluid resistor device described above, the micro-nano electrode is a finger electrode, the finger electrode includes a finger electrode region, and the copper particles sink to the surface of the lower electrode plate and contact the finger electrode region;

[0016] The positive and negative electrodes of the interdigital electrode area extend to both ends of the lower electrode plate to form a first wiring area and a second wiring area, respectively. The first wiring area is electrically connected to the first wiring terminal, and the second wiring area is electrically connected to the second wiring terminal.

[0017] According to the above-mentioned magnetron fluid resistor device, the larger the distance between the adjacent positive and negative electrodes in the interdigitated electrode region, the larger the maximum resistance value of the resistor device;

[0018] Alternatively, the greater the number of interleaved nodes of the positive and negative electrodes adjacent to the interdigitated electrode region, the smaller the minimum resistance value of the variable resistor device;

[0019] Alternatively, the wider the etching width of the interleaved nodes of the positive and negative electrodes adjacent to the interdigitated electrode region, the smaller the minimum resistance value of the varistor device.

[0020] According to the above-mentioned magnetoresistive fluid resistor device, a first notch is provided on a side of the first wiring terminal close to the lower electrode plate, the first notch is clamped on the lower electrode plate, and the first notch is in close contact with the first wiring area;

[0021] And / or, a second notch is provided on a side of the second wiring terminal close to the lower electrode plate, the second notch is clamped on the lower electrode plate, and the second notch is in close contact with the second wiring area.

[0022] According to the above-mentioned magnetoresistive fluid resistor device, the flow channel chip comprises:

[0023] an injection channel with a preset height, the injection channel being arranged on a side of the flow channel chip away from the groove and connected to the flow channel chip, the injection channel being in communication with the groove;

[0024] An air outlet channel with a preset height, the air outlet channel is arranged on a side of the flow channel chip away from the groove and connected to the flow channel chip, and the air outlet channel is communicated with the groove;

[0025] The injection channel and the air outlet channel are respectively arranged at two ends of the groove.

[0026] According to the above-mentioned magnetron fluid resistor device, the resistor device comprises:

[0027] An injection port seal, the injection port seal is disposed at the injection port of the injection channel and seals the injection port;

[0028] An air outlet sealing member is disposed at the air outlet of the air outlet passage and seals the air outlet.

[0029] According to the magnetoresistive fluid resistor device described above, the flow channel chip is bonded to the lower electrode plate and sealed by glue.

[0030] The beneficial effects of the magnetron fluid resistor device provided by the present invention are at least:

[0031] The magnetron fluid rheostat device provided by the present invention has a groove arranged on one side of the flow channel chip. After the flow channel chip is connected to the lower electrode plate, a storage cavity is formed between the groove and the lower electrode plate. The rheostat device is placed horizontally, and then fluid is injected into the storage cavity so that the fluid is spread in the storage cavity, and the fluid contacts the micro-nano electrode etched on the lower electrode plate, that is, the fluid is electrically connected to the micro-nano electrode. When the resistance value of the rheostat device needs to be adjusted, the resistance value of the rheostat device can be adjusted in a non-contact manner by cooperating with the fluid in the storage cavity through an external magnetic field, thereby dynamically controlling the current of the circuit and distributing the voltage of the circuit. Compared with the traditional physical contact method, the present invention avoids mechanical wear, prolongs the service life of the rheostat device, avoids the occurrence of poor contact, and improves the stability of the circuit. The present invention is also suitable for micro-complex space working conditions, can adapt to most circuit requirements, and greatly increases the application range of the rheostat device. The overall structure of the magnetron fluid rheostat device provided by the present invention is simple, compact, and easy to operate. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0033] Figure 1 A schematic diagram of the structure of a magnetron fluid resistor device provided in an embodiment of the present invention;

[0034] Figure 2 Schematic diagram of the explosion structure of the magnetron fluid resistor device provided in the embodiment of the present invention Figure 1 ;

[0035] Figure 3 Schematic diagram of the explosion structure of the magnetron fluid resistor device provided in the embodiment of the present invention Figure 2 ;

[0036] Figure 4 A schematic cross-sectional structure diagram of a magnetron fluid resistor device provided in an embodiment of the present invention;

[0037] Figure 5 for Figure 4 A schematic diagram of the enlarged structure of part A;

[0038] Figure 6 A schematic diagram of a structure in which copper particles included in a fluid provided by an embodiment of the present invention are in a random state;

[0039] Figure 7 A schematic diagram of copper particles included in a fluid provided by an embodiment of the present invention forming a first conductive chain structure;

[0040] Figure 8 A schematic diagram of copper particles included in a fluid provided by an embodiment of the present invention forming a second conductive chain structure.

[0041] Among them, the reference numerals in the figure are:

[0042]

[0043] DETAILED DESCRIPTION

[0044] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0045] It should be noted that when a component is referred to as being "fixed on" or "disposed on" another component, it may be directly or indirectly located on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The directions or positions indicated by the terms "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are based on the directions or positions shown in the accompanying drawings and are only for the convenience of description and cannot be understood as limitations on the present technical solution. The terms "first" and "second" are only used for the convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0046] See also Figures 1 to 5 , this embodiment provides a magnetically controlled fluid variable resistor device 100, comprising: a lower electrode plate 10, on which a micro-nano electrode 11 is etched, and a first terminal 20 and a second terminal 30 electrically connected to the micro-nano electrode 11 are respectively provided at both ends of the lower electrode plate 10; a flow channel chip 40, one side of the flow channel chip 40 is provided with a groove 41, the lower electrode plate 10 is arranged on one side of the groove 41 and connected to the flow channel chip 40, and the groove 41 and the lower electrode plate 10 form a storage cavity 50; a fluid 60, the fluid 60 is injected into the storage cavity 50, the fluid 60 is in contact with the micro-nano electrode 11, and the external magnetic field cooperates with the fluid 60 to adjust the resistance value of the variable resistor device 100. Optionally, the lower electrode plate 10 is made of conductive glass. Optionally, the external magnetic field is generated by a permanent magnet or an electromagnet.

[0047] The beneficial effects of the magnetron fluid resistor device 100 provided in this embodiment are at least:

[0048] The magnetron fluid variable resistor device 100 provided in this embodiment has a groove 41 set on one side of the flow channel chip 40. After the flow channel chip 40 is connected to the lower electrode 10, a storage cavity 50 is formed between the groove 41 and the lower electrode 10. The variable resistor device 100 is placed horizontally, and then the fluid 60 is injected into the storage cavity 50, so that the fluid 60 is spread flat in the storage cavity 50, and the fluid 60 is in contact with the micro-nano electrode 11 etched on the lower electrode 10, that is, the fluid 60 is electrically connected to the micro-nano electrode 11. When the resistance value of the variable resistor device 100 needs to be adjusted, the resistance value of the variable resistor device 100 can be adjusted in a non-contact manner by cooperating with the fluid 60 in the storage cavity 50 through an external magnetic field, thereby realizing dynamic constant control of the circuit current and distribution of the circuit voltage. Compared with the traditional physical contact method, this embodiment avoids mechanical wear, extends the service life of the variable resistor device 100, avoids the occurrence of poor contact, and improves the stability of the circuit. In addition, this embodiment is also suitable for micro-complex space conditions and can adapt to most circuit requirements, greatly increasing the application scope of the variable resistor device 100. The overall structure of the magnetoresistive fluid variable resistor device 100 provided in this embodiment is simple, compact, and easy to operate.

[0049] In one embodiment, see Figure 6 , and refer to Figures 1 to 5 , the fluid 60 includes: copper particles 61, the copper particles 61 sink to the surface of the lower plate 10 and contact the micro-nano electrode 11; magnetic fluid 62, the magnetic fluid 62 controls the copper particles 61 to form a conductive chain structure under the action of an external magnetic field, and the conductive chain structure is parallel to the direction of the external magnetic field. The fluid 60 in this embodiment is a mixture of copper particles 61 and magnetic fluid 62. The magnetic fluid 62 included in the fluid 60 is a nano-scale magnetic particle, which is suspended in the base carrier liquid to form a stable colloid through the action of a dispersant, and the magnetic fluid 62 can be controlled by an external magnetic field; the copper particles 61 included in the fluid 60 are conductive metal particles, which cannot be controlled by an external magnetic field. After the fluid 60 is injected into the storage cavity 50, the variable resistor device 100 is placed horizontally, and the copper particles 61 included in the fluid 60 will settle on the surface of the lower plate 10 due to gravity, and contact and connect with the micro-nano electrode 11 on the lower plate 10. Under normal circumstances, the copper particles 61 settle randomly and do not contact each other. At this time, the resistance of the resistor device 100 is a medium resistance. Through the magnetic fluid 62 provided in this embodiment, the magnetic fluid 62 can control the movement of the non-magnetic copper particles 61 under the action of the external magnetic field to form a conductive chain structure, and the formed conductive chain structure is always parallel to the direction of the external magnetic field.

[0050] In one embodiment, the volume of the copper particle 61 is the bottom area of ​​the storage cavity 50 multiplied by ¼ of the diameter of the copper particle 61 .

[0051] In one embodiment, the long side dimension of the bottom surface of the storage cavity 50 is 10-30 mm, and the wide side dimension of the bottom surface of the storage cavity 50 is 10-30 mm.

[0052] In one embodiment, the bottom surface of the storage cavity 50 is square, and the bottom surface size is 20mm*20mm. It should be understood that the bottom surface size of the storage cavity 50 is not limited to the above situation, and can also be other situations, which is not limited here.

[0053] In one embodiment, the size of the copper particles 61 is 1 to 20 micrometers. It should be understood that the size of the copper particles 61 is not limited to the above situation, and can also be other situations, which are not limited here.

[0054] In one embodiment, the copper particles 61 are non-spherical irregular conductive metal particles. Since the copper particles 61 need to contact the lower electrode plate 10, the copper particles 61 are set to an irregular state. Compared with the point contact between a sphere and a plane, the irregularly shaped copper particles 61 are more likely to form a certain contact surface with the lower electrode plate 10, and the contact effect is better.

[0055] In one embodiment, see Figure 2 The micro-nano electrode 11 is a finger electrode, and the finger electrode includes a finger electrode region 111. The copper particles 61 sink to the surface of the lower electrode plate 10 and contact the finger electrode region 111. The arrangement direction of the finger electrode region 111 is perpendicular to the gravity direction, so that the copper particles 61 can settle at the bottom and interact with the lower electrode plate 10. The positive and negative electrodes of the finger electrode region 111 extend to the two ends of the lower electrode plate 10, respectively, to form a first wiring region 112 and a second wiring region 113, respectively, the first wiring region 112 is electrically connected to the first wiring terminal 20, and the second wiring region 113 is electrically connected to the second wiring terminal 30.

[0056] When an external magnetic field acts, when the angle between the external magnetic field and the interdigital electrode region 111 of the lower plate 10 changes, since the conductive chain structure is always parallel to the direction of the external magnetic field, the angle between the conductive chain structure and the interdigital electrode region 111 also changes, thereby causing the resistance value of the variable resistor device 100 to change. That is, by changing the direction of the external magnetic field, the resistance of the variable resistor device 100 can be changed within a certain range, achieving the effect of magnetically controlled resistance. In one embodiment, refer to Figure 7, when the resistance of the variable resistor device 100 is the smallest, the direction of the external magnetic field is the connection direction of the first terminal 20 and the second terminal 30. Specifically, when the outside world acts on a magnetic field in the direction of the connection direction of the first terminal 20 and the second terminal 30, the copper powder particles 61 included in the fluid 60 form a first conductive chain structure 61a in the storage cavity 50, which is equivalent to a wire or multiple wires connecting the positive and negative electrodes of the finger electrode area 111. The resistance change of a first conductive chain structure 61a is limited. Many first conductive chain structures 61a connected in parallel can achieve a wide range of resistance changing effects. Through the action of the positive and negative electrodes of the finger electrode area 111 and the first conductive chain structure 61a, the resistance of the variable resistor device 100 is reduced along the magnetic field direction. At this time, the overall resistance of the variable resistor device 100 is the smallest. In one embodiment, please refer to Figure 7 , when the resistance of the varistor device 100 is the largest, the direction of the external magnetic field is the perpendicular direction of the line connecting the first terminal 20 and the second terminal 30. Specifically, when the external force acts on a magnetic field in a direction perpendicular to the line connecting the first terminal 20 and the second terminal 30, the copper powder particles 61 included in the fluid 60 form a second conductive chain structure 61b in the storage cavity 50, and the positive and negative electrodes of the finger electrode area 111 interact with the second conductive chain structure 61b, so that the resistance of the varistor device 100 along the magnetic field direction is reduced, and the resistance along the line connecting the first terminal 20 and the second terminal 30 is increased. At this time, the entire resistance of the varistor device 100 is the largest. In one embodiment, within a certain range, the higher the external magnetic field, the faster the conductive chain structure is formed, the faster the resistance of the varistor device 100 is adjusted, the larger the adjustment range of the varistor device 100, and the limit value of the external magnetic field is the critical value at which the conductive chain structure no longer develops.

[0057] In one embodiment, the larger the spacing between the adjacent positive and negative electrodes in the interdigitating electrode region 111, the larger the maximum resistance of the varistor device 100. Optionally, the spacing between the adjacent positive and negative electrodes in the interdigitating electrode region 111 is 5 times the diameter of the copper particle 61, that is, the spacing between the adjacent positive and negative electrodes in the interdigitating electrode region 111 is 5-100 microns. It should be understood that the spacing between the adjacent positive and negative electrodes in the interdigitating electrode region 111 is not limited to the case, and can also be other values, which are not limited here.

[0058] In one embodiment, the greater the number of interleaved nodes of adjacent positive and negative electrodes in the interdigitated electrode region 111 , the smaller the minimum resistance value of the varistor device 100 .

[0059] In one embodiment, the wider the etching width of the staggered nodes of the positive and negative electrodes adjacent to the interdigital electrode region 111, the smaller the minimum resistance of the varistor device 100. For varistor devices 100 with different working ranges, the spacing between the positive and negative electrodes adjacent to the interdigital electrode region 111, the diameter of the copper particles 61, the number of staggered nodes of the positive and negative electrodes adjacent to the interdigital electrode region 111, and the etching width of the staggered nodes of the positive and negative electrodes adjacent to the interdigital electrode region 111 can be adjusted to customize.

[0060] In one embodiment, see Figure 3 , a first notch 21 is provided on one side of the first terminal 20 close to the lower plate 10, the first notch 21 is clamped on the lower plate 10, and the first notch 21 is in close contact with the first wiring area 112. By providing the first notch 21 on the first terminal 20 and clamping the first notch 21 on the lower plate 10, the first terminal 20 is connected to the lower plate 10, and the inside of the first notch 21 is in close contact with the first wiring area 112 to achieve electrical connection. Optionally, the size of the first notch 21 is slightly smaller than the thickness of the lower plate 10, and it is interference fit with the lower plate 10, and is in contact with the first wiring area 112 by pressure, so as to achieve a conductive effect and facilitate wiring.

[0061] In one embodiment, please refer to Figure 3 , a second notch 31 is provided on one side of the second terminal 30 close to the lower plate 10, the second notch 31 is clamped on the lower plate 10, and the second notch 31 is in close contact with the second wiring area 113. By providing the second notch 31 on the second terminal 30 and clamping the second notch 31 on the lower plate 10, the second terminal 30 is connected to the lower plate 10, and the inside of the second notch 31 is in close contact with the second wiring area 113 to achieve electrical connection. Optionally, the size of the second notch 31 is slightly smaller than the thickness of the lower plate 10, and it is interference fit with the lower plate 10, and is in contact with the second wiring area 113 by pressure, so as to achieve a conductive effect and facilitate wiring.

[0062] In one embodiment, see Figures 1 to 4The flow channel chip 40 includes: an injection channel 42 with a preset height, the injection channel 42 is arranged on a side of the flow channel chip 40 away from the groove 41 and connected to the flow channel chip 40, and the injection channel 42 is communicated with the groove 41; an outlet channel 43 with a preset height, the outlet channel 43 is arranged on a side of the flow channel chip 40 away from the groove 41 and connected to the flow channel chip 40, and the outlet channel 43 is communicated with the groove 41; the injection channel 42 and the outlet channel 43 are respectively arranged at both ends of the groove 41. By arranging the injection channel 42 and the outlet channel 43 on the flow channel chip 40, the injection channel 42 is used to inject the fluid 60, and the outlet channel 43 is used to exhaust the gas. Since the injection channel 42 and the air outlet channel 43 have preset heights, the fluid 60 is injected from the injection channel 42. Under the action of gravity, the fluid 60 uses the larger pressure generated by the liquid level difference to expel the gas in the storage chamber 50, thereby avoiding the generation of bubbles in the storage chamber 50. The injection channel 42 and the air outlet channel 43 are respectively arranged at both ends of the groove 41 to fully discharge the gas.

[0063] Optionally, the preset height of the injection channel 42 and the air outlet channel 43 is 2-6 mm, and optionally, the preset height of the injection channel 42 and the air outlet channel 43 is 4 mm. It should be understood that the preset heights of the injection channel 42 and the air outlet channel 43 are not limited to the above values, and can also be other values, which are not limited here.

[0064] Optionally, the depth of the groove 41 is twice the diameter of the copper particle 61, that is, the depth of the groove 41 is 2-40 microns. It should be understood that the depth of the groove 41 is not limited to twice the diameter of the copper particle 61, but can be other values, which are not limited here.

[0065] In one embodiment, see Figure 2 The variable resistor device 100 includes: an injection port seal 70, which is disposed at the injection port 421 of the injection channel 42 and seals the injection port 421; and an air outlet seal 80, which is disposed at the air outlet 431 of the air outlet channel 43 and seals the air outlet 431. The provision of the injection port seal 70 and the air outlet seal 80 achieves sealing of the fluid 60 in the storage cavity 50 and ensures that the fluid 60 does not leave the storage cavity 50.

[0066] In one embodiment, the injection port seal 70 and the air outlet seal 80 are sealing screws, which are connected with the internal threads of the injection port seal 70 and the air outlet seal 80. During specific operations, before sealing the inlet 421 and the air outlet 431, glue is applied to the sealing screws, and then the sealing screws are screwed into the screw holes and then irradiated with ultraviolet light to solidify the glue to achieve a sealing effect.

[0067] In one embodiment, see Figure 1 , the channel chip 40 is bonded to the lower electrode plate 10 and sealed by glue. In the specific operation, before the lower electrode plate 10 is bonded to the channel chip 40, a thin layer of glue is applied to the lower electrode plate 10, and then the channel chip 40 is placed on the lower electrode plate 10. After accurate positioning, ultraviolet light is used to irradiate the entire variable resistor device 100 to solidify the glue to achieve a sealing effect.

[0068] In summary, the present embodiment provides a magnetron fluid resistor device 100, comprising: a lower electrode plate 10, on which a micro-nano electrode 11 is etched, and two ends of the lower electrode plate 10 are respectively provided with a first terminal 20 and a second terminal 30 electrically connected to the micro-nano electrode 11; a flow channel chip 40, one side of the flow channel chip 40 is provided with a groove 41, the lower electrode plate 10 is arranged on one side of the groove 41 and is connected to the flow channel chip 40, and the groove 41 and the lower electrode plate 10 form a storage cavity 50; a fluid 60, the fluid 60 is injected into the storage cavity 50, the fluid 60 is in contact with the micro-nano electrode 11, and the external magnetic field cooperates with the fluid 60 to adjust the resistance value of the variable resistor device 100. The magnetron fluid variable resistor device 100 provided in this embodiment has a groove 41 set on one side of the flow channel chip 40. After the flow channel chip 40 is connected to the lower electrode 10, a storage cavity 50 is formed between the groove 41 and the lower electrode 10. The variable resistor device 100 is placed horizontally, and then the fluid 60 is injected into the storage cavity 50, so that the fluid 60 is spread flat in the storage cavity 50, and the fluid 60 is in contact with the micro-nano electrode 11 etched on the lower electrode 10, that is, the fluid 60 is electrically connected to the micro-nano electrode 11. When the resistance value of the variable resistor device 100 needs to be adjusted, the resistance value of the variable resistor device 100 can be adjusted in a non-contact manner by cooperating with the fluid 60 in the storage cavity 50 through an external magnetic field, thereby realizing dynamic constant control of the circuit current and distribution of the circuit voltage. Compared with the traditional physical contact method, this embodiment avoids mechanical wear, extends the service life of the variable resistor device 100, avoids the occurrence of poor contact, and improves the stability of the circuit. In addition, this embodiment is also suitable for micro-complex space conditions and can adapt to most circuit requirements, greatly increasing the application scope of the variable resistor device 100. The overall structure of the magnetoresistive fluid variable resistor device 100 provided in this embodiment is simple, compact, and easy to operate.

[0069] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A magnetron fluid rheostat device, characterized in that: include: A lower electrode plate, on which a micro-nano electrode is etched, and two ends of the lower electrode plate are respectively provided with a first terminal and a second terminal electrically connected to the micro-nano electrode; A flow channel chip, wherein a groove is provided on one side of the flow channel chip, the lower electrode plate is provided on one side of the groove and connected to the flow channel chip, and the groove and the lower electrode plate form a storage cavity; A fluid is injected into the storage cavity, the fluid contacts the micro-nano electrode, and an external magnetic field cooperates with the fluid to adjust the resistance value of the variable resistor device; The fluid comprises: Copper particles, which sink to the surface of the lower electrode plate and contact the micro-nano electrode; A magnetic fluid, wherein the magnetic fluid controls the copper particles to form a conductive chain structure under the action of an external magnetic field, and the conductive chain structure is parallel to the direction of the external magnetic field; The copper particles are non-spherical irregular conductive metal particles, and the size of the copper particles is 1 to 20 microns; When the resistance of the variable resistor device is minimum, the direction of the external magnetic field is the connection direction of the first wiring terminal and the second wiring terminal; When the resistance value of the variable resistor device is the largest, the direction of the external magnetic field is a perpendicular direction to a line connecting the second wiring terminal and the first wiring terminal.

2. The magnetron fluid resistor device according to claim 1, characterized in that: The micro-nano electrode is an interdigitated electrode, and the interdigitated electrode includes an interdigitated electrode region. The copper particles sink to the surface of the lower electrode plate and contact the interdigitated electrode region. The positive and negative electrodes of the interdigital electrode area extend to both ends of the lower electrode plate to form a first wiring area and a second wiring area, respectively. The first wiring area is electrically connected to the first wiring terminal, and the second wiring area is electrically connected to the second wiring terminal.

3. The magnetron fluid resistor device according to claim 2, characterized in that: The larger the distance between the adjacent positive and negative electrodes in the interdigitated electrode region, the larger the maximum resistance value of the variable resistor device; Alternatively, the greater the number of interleaved nodes of the positive and negative electrodes adjacent to the interdigitated electrode region, the smaller the minimum resistance value of the variable resistor device; Alternatively, the wider the etching width of the interleaved nodes of the positive and negative electrodes adjacent to the interdigitated electrode region, the smaller the minimum resistance value of the varistor device.

4. The magnetron fluid resistor device according to claim 2, characterized in that: A first notch is provided on one side of the first wiring terminal close to the lower electrode plate, the first notch is clamped on the lower electrode plate, and the first notch is in close contact with the first wiring area; And / or, a second notch is provided on a side of the second wiring terminal close to the lower electrode plate, the second notch is clamped on the lower electrode plate, and the second notch is in close contact with the second wiring area.

5. The magnetron fluid resistor device according to claim 1, characterized in that: The flow channel chip comprises: An injection channel with a preset height, the injection channel is arranged on a side of the flow channel chip away from the groove and connected to the flow channel chip, and the injection channel is in communication with the groove; An air outlet channel with a preset height, the air outlet channel is arranged on a side of the flow channel chip away from the groove and connected to the flow channel chip, and the air outlet channel is communicated with the groove; The injection channel and the air outlet channel are respectively arranged at two ends of the groove.

6. The magnetron fluid resistor device according to claim 5, characterized in that: The varistor device comprises: An injection port seal, the injection port seal is disposed at the injection port of the injection channel and seals the injection port; An air outlet sealing member is disposed at the air outlet of the air outlet passage and seals the air outlet.

7. The magnetron fluid resistor device according to claim 1, characterized in that: The flow channel chip is bonded to the lower electrode plate and sealed by glue.

Images