Display device

Abstract

A display device is disclosed, the display device includes a display panel, the display panel includes an anti-reflection layer located on a light-emitting element layer, the light-emitting element layer includes a first pixel defining layer and a second pixel defining layer, the first pixel defining layer defines an opening defining a light-emitting area of ​​a first pixel, and the second pixel defining layer defines an opening defining a light-emitting area of ​​a second pixel. The anti-reflection layer includes a first light-shielding layer and a second light-shielding layer respectively overlapping the first pixel defining layer and the second pixel defining layer in a thickness direction of the display panel, and the display device includes a first gap defined by a length from an edge of an opening of the first pixel defining layer to an edge of an opening of the first light-shielding layer in a predetermined direction, and a second gap defined by a length from an edge of an opening of the second pixel defining layer to an edge of an opening of the second light-shielding layer in a predetermined direction. The first gap is smaller than the second gap.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all rights arising from Korean Patent Application No. 10-2020-0006777 filed in the Korean Intellectual Property Office on January 17, 2020, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of the present invention relate to a display device. Background Art

[0004] With the development of the information society, the demand for display devices for displaying images has increased in various forms. Display devices are applied to various electronic devices, such as smart phones, digital cameras, notebook computers, navigation devices, and smart TVs. The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or an organic light emitting display device.

[0005] The display device may include a display panel including a plurality of pixels connected to scan lines, data lines, and power lines to display an image. In addition, the display device may include a proximity sensor for sensing whether a user is located near the front surface of the display device, an illuminance sensor for sensing the illuminance of the front surface of the display device, an iris sensor for recognizing the iris of the user, a camera device for shooting videos and still images, etc.

[0006] When the display device is applied to various electronic devices, display devices with various designs are desired. In the case of a smart phone, for example, a display device capable of widening the display area by removing a hole defined in the front surface of the display device is desired. In this case, the sensor device that has been provided in the hole defined in the front surface of the display device may overlap with the display panel. Summary of the invention

[0007] Embodiments of the present invention provide a display device capable of minimizing a difference in optical characteristics between a first region in which a lower panel sensor is disposed and a second region as a remaining region.

[0008] Furthermore, the embodiments of the present invention provide a display device capable of preventing a reduction in illuminance and reducing the thickness of a display panel.

[0009] The display device in the embodiment includes a display panel and a sensor under the panel overlapping with the first area in the thickness direction of the display panel, the display panel including a first area in which a first pixel is defined and a second area in which a second pixel is defined. The display panel includes a light-emitting element layer and an anti-reflection layer arranged on the light-emitting element layer. The light-emitting element layer includes a first pixel defining layer and a second pixel defining layer, the first pixel defining layer defines an opening defining a light-emitting area of ​​the first pixel, and the second pixel defining layer defines an opening defining a light-emitting area of ​​the second pixel. The anti-reflection layer includes a first light-shielding layer overlapping with the first pixel defining layer in the thickness direction and a second light-shielding layer overlapping with the second pixel defining layer in the thickness direction. In the display device, the first gap is defined by the length from the edge of the opening of the first pixel defining layer to the edge of the opening of the first light-shielding layer in a predetermined direction, and in the display device, the second gap is defined by the length from the edge of the opening of the second pixel defining layer to the edge of the opening of the second light-shielding layer in a predetermined direction. The first gap is smaller than the second gap.

[0010] In an embodiment, the display device may further include a thin film encapsulation layer disposed between the light emitting element layer and the anti-reflection layer, and a minimum thickness of the thin film encapsulation layer in the first region may be smaller than a minimum thickness of the thin film encapsulation layer in the second region.

[0011] In an embodiment, the thin film encapsulation layer may include a first encapsulation layer, a second encapsulation layer disposed on the first encapsulation layer, and a third encapsulation layer disposed between the first encapsulation layer and the second encapsulation layer, and a minimum thickness of the third encapsulation layer in the first region may be less than a minimum thickness of the third encapsulation layer in the second region.

[0012] In an embodiment, the first gap and the second gap may be determined based on the following equations:

[0013] G2=G1+a×D TFE3 ,

[0014] Here, G2 may represent the width of the second gap in the predetermined direction, G1 may represent the width of the first gap in the predetermined direction, and D TFE3 α may denote a difference between a minimum thickness of the third encapsulation layer of the first region and a minimum thickness of the third encapsulation layer of the second region, and a may denote a variable set within a range of about 0.4 to about 0.6.

[0015] In an embodiment, the first region may further include a light-transmitting portion that does not overlap with the first pixel in the thickness direction, and the under-panel sensor may overlap with the light-transmitting portion in the thickness direction.

[0016] In an embodiment, the under-panel sensor may include an image sensor as a camera device that receives light provided through the light-transmitting portion.

[0017] In an embodiment, the anti-reflective layer may also include a first color filter overlapping the first pixel in the thickness direction and a second color filter overlapping the second pixel in the thickness direction, and the first color filter may be disposed in the opening of the first shading layer, and the second color filter may be disposed in the opening of the second shading layer.

[0018] In an embodiment, the first pixel may include a first sub-pixel emitting light of a first color, a second sub-pixel emitting light of a second color, and a third sub-pixel emitting light of a third color, and the first color filter may include a first sub-filter overlapping the first sub-pixel in a thickness direction, a second sub-filter overlapping the second sub-pixel in a thickness direction, and a third sub-filter overlapping the third sub-pixel in a thickness direction.

[0019] In an embodiment, a width of the first light shielding layer in the predetermined direction may be greater than a width of the second light shielding layer in the predetermined direction.

[0020] In an embodiment, the number of first pixels per unit area may be smaller than the number of second pixels per unit area.

[0021] In an embodiment, a size of the first region may be smaller than a size of the second region.

[0022] In an embodiment, a width of the first pixel defining layer in the predetermined direction may be substantially the same as a width of the second pixel defining layer in the predetermined direction.

[0023] In an embodiment, a thickness of the second pixel defining layer may be greater than a thickness of the first pixel defining layer.

[0024] A display device in another embodiment includes a display panel and a sensor under the panel overlapping the first area in the thickness direction of the display panel, the display panel including a first area in which a first pixel is defined and a second area in which a second pixel is defined. The display panel may include a light-emitting element layer, a thin film encapsulation layer covering the light-emitting element layer, a sensing layer disposed on the thin film encapsulation layer, and an anti-reflection layer disposed on the sensing layer, and the sensing layer includes a sensing electrode, a first insulating layer, a second insulating layer disposed on the first insulating layer, and a planarization layer disposed between the first insulating layer and the second insulating layer. The light-emitting element layer may include a pixel defining layer that defines a light-emitting area of ​​the first pixel and defines a light-emitting area of ​​the second pixel. The anti-reflection layer may include a light-shielding layer that overlaps the pixel defining layer in the thickness direction. The width of the light-shielding layer in a predetermined direction may be less than the width of the pixel defining layer in the predetermined direction. The thickness of the thin film encapsulation layer of the first pixel may be less than the thickness of the thin film encapsulation layer of the second pixel.

[0025] In an embodiment, the sensing layer may also include a first conductive layer disposed on the second insulating layer, a second conductive layer disposed on the first conductive layer, and a contact layer disposed between the first conductive layer and the second conductive layer, and the second conductive layer may be electrically connected to the first conductive layer through a contact hole passing through the contact layer.

[0026] In an embodiment, the contact layer may not overlap the under-panel sensor in the thickness direction.

[0027] In an embodiment, the contact layer and the planarization layer may include the same material.

[0028] In an embodiment, the contact layer may overlap the under-panel sensor in a thickness direction.

[0029] In an embodiment, the sensing layer may further include a protection layer disposed between the second conductive layer and the anti-reflection layer, and the protection layer may include the same material as the contact layer and the planarization layer.

[0030] In an implementation, a thickness of the planarization layer in the first region may be greater than a thickness of the planarization layer in the second region.

[0031] Specific details of other embodiments are included in the detailed description and accompanying drawings.

[0032] According to the display device in the embodiment, by differently designing the gap between the pixel defining layer and the light shielding layer in the first area where the under-panel sensor is provided and the second area as the remaining area, the difference in optical characteristics between the first area and the second area can be minimized.

[0033] In addition, by providing an anti-reflection layer including a color filter and a light shielding layer, a separate polarizing plate can be omitted. Therefore, a reduction in illuminance can be prevented and the thickness of the display device can be minimized.

[0034] The effects of the embodiments are not limited to the contents shown above, and more various effects are also included in the specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other features of the present invention will become more apparent by further describing the embodiments of the present invention in detail with reference to the accompanying drawings, in which:

[0036] Figure 1 is a perspective view of an embodiment of a display device;

[0037] Figure 2 yes Figure 1 An exploded perspective view of a display device;

[0038] Figure 3 and Figure 4 is a plan view of an embodiment of a display panel;

[0039] Figure 5 and Figure 6 yes Figure 3 a side view of a display panel;

[0040] Figure 7 It is along Figure 3 A cross-sectional view taken along line VII-VII';

[0041] Figure 8 Is used to describe Figure 7 A plan view of a display unit;

[0042] Fig. 9 Is used to describe Figure 8 A plan view of the first area and the second area;

[0043] Fig.10 Is used to describe Figure 7 A plan view of the sensing layer;

[0044] Fig.11 yes Fig.10 An enlarged view of area A;

[0045] Fig.12 It is along Fig.11 A sectional view taken along line XII-XII';

[0046] Fig.13 It is along Fig. 9 A cross-sectional view taken along line XIIIA-XIIIA' and line XIIIB-XIIIB';

[0047] Fig.14 is a cross-sectional view of another embodiment of a display device;

[0048] Fig.15 is a cross-sectional view of another embodiment of a display device; and

[0049] Fig.16 is a cross-sectional view of another embodiment of a display device. DETAILED DESCRIPTION

[0050] With reference to the embodiments described in detail below in conjunction with the accompanying drawings, the advantages and features of the present invention and the methods for achieving them will become more apparent. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various different forms. These embodiments are provided so that the present invention will be thorough and complete, and those skilled in the art to which the present invention belongs can fully understand the scope of the present invention.

[0051] The case where an element or layer is referred to as being "on" another element or layer includes the case where the element or layer is directly disposed on the other element or layer or there is an intervening element or layer therebetween. Throughout the specification, the same reference numerals represent the same components. The shapes, sizes, ratios, angles, quantities, etc. disclosed in the drawings for describing the embodiments are exemplary, and therefore, the present invention is not limited thereto.

[0052] Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, the first component mentioned below can be the second component within the technical spirit of the present invention.

[0053] Each of the features of various embodiments of the present invention may be combined or combined with each other in part or in whole, and various associations and drives may be performed technically. Each embodiment may be implemented independently of each other, or the associations thereof may be implemented together.

[0054] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0055] In the specification, the first direction DR1 indicates an X-axis direction, the second direction DR2 indicates a Y-axis direction, and the third direction DR3 indicates a Z-axis direction.

[0056] Figure 1 It is a perspective view of an embodiment of a display device. Figure 2 yes Figure 1 An exploded perspective view of a display device.

[0057] refer to Figure 1 and Figure 2 The display device 10 in the embodiment is a device for displaying a video or a still image. The display device 10 can be used as a display screen for various products, such as portable electronic devices (such as mobile phones, smart phones, tablet personal computers ("PCs"), smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players ("PMPs"), navigation devices, and ultra-mobile PCs ("UMPCs")) as well as televisions, notebook computers, monitors, billboards, and the Internet of Things ("IOT").

[0058] The display device 10 may have a planar quadrilateral (eg, rectangular) shape. Figure 1 and Figure 2As shown in , the display device 10 may have a flat rectangular shape including short sides in the first direction DR1 and long sides in the second direction DR2. Corners where the short sides in the first direction DR1 and the long sides in the second direction DR2 meet may be rounded to have a predetermined curvature, or may have a right angle. The planar shape of the display device 10 is not limited to a rectangle, and may include various other shapes, such as a polygon, a circle, or an ellipse.

[0059] The display device 10 may include a flat first surface S1 and a second surface S2 extending from the left and right sides of the first surface S1. The second surface S2 may be flat or may include a curved surface. When the second surface S2 is flat, the angle defined by the first surface S1 and the second surface S2 may be an obtuse angle. When the second surface S2 includes a curved surface, the second surface S2 may have a predetermined curvature or have a varying curvature.

[0060] exist Figure 1 In the embodiment, the second surface S2 extends from each of the left side and the right side of the first surface S1, but is not limited thereto. That is, the second surface S2 may extend from only one of the left side and the right side of the first surface S1. In addition, the second surface S2 may extend from at least one of the upper side and the lower side and the left side and the right side of the first surface S1. Hereinafter, a description will be given based on an example in which the second surface S2 is provided at the left edge and the right edge of the display device 10.

[0061] The display device 10 includes a cover window 100 , a display panel 300 , a bracket 600 , a main circuit board 700 , and a lower cover 900 .

[0062] The cover window 100 may be disposed on the display panel 300 to cover the upper surface of the display panel 300. Therefore, the cover window 100 may be used to protect the upper surface of the display panel 300.

[0063] The cover window 100 may be disposed on the first surface S1 and the second surface S2 .

[0064] The cover window 100 may include a light-transmitting portion 100DA corresponding to the display panel 300 and a light-shielding portion 100NDA corresponding to an area other than the display panel 300 .

[0065] The light-transmitting portion 100DA may be disposed on a portion of the first surface S1 and a portion of the second surface S2. The light-shielding portion 100NDA may be opaque. In an alternative embodiment, the light-shielding portion 100NDA may be disposed as a decorative layer including a pattern that may be displayed to a user.

[0066] The light-transmitting portion 100DA may include a first light-transmitting portion 100A1 corresponding to a first area A1 of a display panel 300 to be described later and a second light-transmitting portion 100A2 corresponding to a second area A2 of the display panel 300 .

[0067] The display panel 300 may be disposed under the cover window 100. The display panel 300 may overlap the light transmitting portion 100DA of the cover window 100.

[0068] The display panel 300 may be disposed on the first surface S1 and the second surface S2. Therefore, an image displayed by the display panel 300 may be viewed not only on the first surface S1 but also on the second surface S2.

[0069] The display panel 300 may include a first area A1 and a second area A2. The first area A1 may overlap with the first light-transmitting portion 100A1 of the cover window 100. The second area A2 may overlap with the second light-transmitting portion 100A2 of the cover window 100. The first area A1 may be disposed on one side of the second area A2, for example, as Figure 2 As shown in FIG. 1 , the second region A2 is disposed on the upper side thereof, but is not limited thereto.

[0070] The display panel 300 may be a light-emitting display panel including a light-emitting element. In an embodiment, for example, the display panel 300 may be an organic light-emitting display panel using an organic light-emitting diode including an organic light-emitting layer, a micro LED display panel using a micro light-emitting diode ("LED"), a quantum dot light-emitting display panel using a quantum dot light-emitting diode including a quantum dot light-emitting layer, or an inorganic light-emitting display panel using an inorganic light-emitting element including an inorganic semiconductor. Hereinafter, a description will be given based on an example in which the display panel 300 is an organic light-emitting display panel.

[0071] The display circuit board 310 and the display driving circuit 320 may be attached to one side of the display panel 300. One end of the display circuit board 310 may be attached to a pad provided on one side of the display panel 300 using an anisotropic conductive film. In an embodiment, for example, the display circuit board 310 may be a bendable flexible printed circuit board ("FPCB"), but is not limited thereto. In an embodiment, the display circuit board 310 may include a first portion 311 extending in a first direction DR1 (refer to FIG. 2 ). Figure 3 ) and a second portion 312 extending in the second direction DR2 (refer to Figure 3 ).

[0072] The display driving circuit 320 may receive a control signal and a power supply voltage through the display circuit board 310, and generate and output a signal and a voltage for driving the display panel 300. In an embodiment, for example, the display driving circuit 320 may be provided as an integrated circuit ("IC"). The display driving circuit 320 may be provided on the display panel 300. In an embodiment, for example, the display driving circuit 320 may be attached to the display panel 300 by a chip on glass ("COG") method, a chip on plastic ("COP") method, or an ultrasonic bonding method. In an optional embodiment, the display driving circuit 320 may be provided on the display circuit board 310.

[0073] The display circuit board 310 may be provided with a sensing driver 330 . In an embodiment, for example, the sensing driver 330 may include an IC. The sensing driver 330 may be attached to the display circuit board 310 .

[0074] The sensing driver 330 may be electrically connected to the sensing electrodes of the sensing layer of the display panel 300 through the display circuit board 310. The sensing driver 330 may determine whether the user has touched thereon by applying a driving signal to some of the sensing electrodes used as driving electrodes and sensing the voltage charged in the mutual capacitance (hereinafter referred to as "mutual capacitance") between some of the sensing electrodes used as driving electrodes and the remaining sensing electrodes through the remaining sensing electrodes. In this case, the user's touch may include a contact touch and a proximity touch. The contact touch indicates that the user's finger or an object such as a pen directly contacts the cover window 100 of the display device 10 disposed on the sensing layer. The proximity touch indicates that the user's finger or an object such as a pen is placed closely spaced from one surface of the display device 10, such as hovering.

[0075] A bracket 600 may be disposed below the display panel 300. In an implementation, for example, the bracket 600 may include plastic, metal, or both plastic and metal.

[0076] The bracket 600 may define a sensor hole SH in which the under-panel sensors 720, 730, 740, and 750 are disposed and a battery hole BH in which the battery 790 is disposed. The sensor hole SH and the battery hole BH may penetrate the bracket 600 in the thickness direction. The sensor hole SH may overlap the first area A1 of the display panel 300.

[0077] The main circuit board 700 and the battery 790 may be disposed under the bracket 600. In an embodiment, for example, the main circuit board 700 may be a printed circuit board ("PCB") or a FPCB.

[0078] The main circuit board 700 may include a main processor 710 and under-panel sensors 720, 730, 740, and 750. The under-panel sensors 720, 730, 740, and 750 may be disposed on an upper surface of the main circuit board 700. The under-panel sensors 720, 730, 740, and 750 may overlap the first area A1 of the display panel 300.

[0079] The main processor 710 may control all functions of the display device 10. In an embodiment, for example, the main processor 710 may output digital video data to the display driving circuit 320 through the display circuit board 310 so that the display panel 300 displays an image. In addition, the main processor 710 may receive sensing data from the sensing driver 330, determine the user's touch coordinates, and then execute an application indicated by an icon displayed on the user's touch coordinates. In addition, the main processor 710 may control the display device 10 according to sensing signals input from the under-panel sensors 720, 730, 740, and 750.

[0080] The under-panel sensors 720 , 730 , 740 , and 750 may include a proximity sensor 720 , an illumination sensor 730 , an iris sensor 740 , and a camera device 750 .

[0081] The proximity sensor 720 may sense whether an object is located near the upper surface of the display device 10. The proximity sensor 720 may include a light source that outputs light and a light receiver that receives light reflected by the object. According to the amount of light reflected by the object, the proximity sensor 720 may determine whether there is an object located near the upper surface of the display device 10. Therefore, the proximity sensor 720 may generate a proximity sensor signal and output the proximity sensor signal to the main processor 710.

[0082] The illuminance sensor 730 may sense the brightness of the upper surface of the display device 10. To this end, the illuminance sensor 730 may include a resistor whose resistance value changes according to the brightness of the incident light. The illuminance sensor 730 may determine the brightness of the upper surface of the display device 10 according to the resistance value of the resistor. The illuminance sensor 730 may generate an illuminance sensor signal according to the brightness of the upper surface of the display device 10, and output the illuminance sensor signal to the main processor 710.

[0083] The iris sensor 740 may sense whether an image obtained by imaging the user's iris is the same as an iris image previously stored in the memory. Therefore, the iris sensor 740 may generate an iris sensor signal and output the iris sensor signal to the main processor 710.

[0084] The camera device 750 may process image frames such as still images or moving images obtained by the image sensor in the camera mode and output the processed image frames to the main processor 710. The camera device 750 may include an image sensor that receives light provided through the light-transmitting portion of the first area A1. Figure 2 , the proximity sensor 720, the illumination sensor 730, the iris sensor 740, and the camera device 750 are illustrated as the under-panel sensors 720, 730, 740, and 750, but are not necessarily limited thereto, and the under-panel sensors 720, 730, 740, and 750 may also include infrared sensors and / or ultrasonic sensors.

[0085] Will refer to it later Fig.13 A detailed description of the light-transmitting portion of the first area A1 is described.

[0086] The battery 790 may be disposed so as not to overlap with the main circuit board 700 in the third direction DR3. The battery 790 may overlap with the battery hole BH of the bracket 600.

[0087] The lower cover 900 may be disposed below the main circuit board 700 and the battery 790. The lower cover 900 may be fastened and fixed to the bracket 600. The lower cover 900 may form an appearance of a lower surface of the display device 10. In an embodiment, for example, the lower cover 900 may include plastic, metal, or both plastic and metal.

[0088] Figure 3 and Figure 4 is a plan view of an embodiment of a display panel. Figure 5 and Figure 6 yes Figure 3 A side view of a display panel.

[0089] refer to Figures 3 to 6 , the display panel 300 may include a main area MA and a protrusion area PA protruding from one side of the main area MA.

[0090] The main area MA may have a quadrilateral (e.g., rectangular) shape including short sides in the first direction DR1 and long sides in the second direction DR2 crossing the first direction DR1. Corners where the short sides in the first direction DR1 and the long sides in the second direction DR2 meet may be rounded to have a predetermined curvature or may have a right angle.

[0091] The main area MA may include a display area DA in which pixels display an image and a non-display area NDA which is a peripheral area of ​​the display area DA.

[0092] In addition to the pixels, scan lines, data lines, and power lines connected to the pixels may be disposed in the display area DA. When the main area MA includes a curved surface portion, the display area DA may be disposed in the curved surface portion. In this case, an image displayed by the display panel 300 may also be seen in the curved surface portion.

[0093] The display area DA may include the first area A1 and the second area A2. The first area A1 may be disposed on one side of the second area A2, but is not limited thereto. Figure 4 As shown in , the display area DA may include a plurality of first areas A1, and the first areas A1 may be surrounded by the second areas A2. In addition, the first areas A1 may be disposed adjacent to corners of the second areas A2.

[0094] The number of the first areas A1 may be plural. In this case, the number of the first areas A1 may correspond to the number of the under-panel sensors 720, 730, 740, and 750, and each of the under-panel sensors 720, 730, 740, and 750 may overlap with one first area A1.

[0095] The size of the first area A1 may be different from the size of the second area A2. In an embodiment, for example, the size of the first area A1 may be smaller than the size of the second area A2, but is not limited thereto.

[0096] Reference again Figure 3 A scan driver for applying a scan signal to the scan line and a link line connecting the data line to the display driving circuit 320 may be provided in the non-display area NDA.

[0097] The protruding area PA may protrude from one side of the main area MA. Figure 3 As shown in , the protrusion area PA may protrude from the lower side of the main area MA. A length of the protrusion area PA in the first direction DR1 may be smaller than a length of the main area MA in the first direction DR1.

[0098] The protruding area PA may include a bending area BA and a pad area PDA. In this case, the pad area PDA may be disposed on one side of the bending area BA, and the main area MA may be disposed on the other side of the bending area BA. That is, the bending area BA may be disposed between the main area MA and the pad area PDA.

[0099] The display panel 300 may be flexibly disposed to be bent, curved, folded, or rolled. Therefore, the display panel 300 may be bent in the thickness direction (third direction DR3) in the bending area BA. Figure 5 As shown in FIG. 1 , before the display panel 300 is bent, one surface of the pad area PDA of the display panel 300 may face upward. Figure 6 , the one surface of the pad area PDA of the display panel 300 faces downward. Therefore, since the pad area PDA is disposed below the main area MA, the pad area PDA may overlap the main area MA.

[0100] Pads electrically connected to the display driving circuit 320 and the display circuit board 310 may be provided in the pad area PDA of the display panel 300 .

[0101] A panel protection film 301 may be disposed below the display panel 300. The panel protection film 301 may be attached to the lower surface of the display panel 300 by an adhesive member. In an embodiment, for example, the adhesive member may include a pressure sensitive adhesive ("PSA").

[0102] The panel protection film 301 may include a light absorbing member for absorbing light incident from the outside, a buffering member for absorbing impact from the outside, a heat dissipating member for effectively dissipating heat of the display panel 300 , and the like.

[0103] The light absorbing member may be disposed under the display panel 300. The light absorbing member may prevent transmission of light to prevent a configuration disposed under the light absorbing member (e.g., the display circuit board 310, etc.) from being seen from above the display panel 300. The light absorbing member may include a light absorbing material such as a black pigment or a black dye.

[0104] The buffer member may be disposed below the light absorbing member. The buffer member may absorb external impact to prevent the display panel 300 from being damaged. The buffer member may include a single layer or a plurality of layers. In an embodiment, for example, the buffer member may include a polymer resin such as polyurethane, polycarbonate, polypropylene, or polyethylene, or may be provided by including a material having elasticity such as rubber, a urethane-based material, or a sponge foamed from an acrylic-based material. The buffer member may be a cushion layer.

[0105] The heat dissipation member may be disposed below the buffer member. The heat dissipation member may include a first heat dissipation layer including graphite, carbon nanotubes, etc., and a second heat dissipation layer including a thin metal film that can shield electromagnetic waves and has excellent thermal conductivity, such as copper, nickel, ferrite, or silver.

[0106] In order to make the display panel 300 easy to be bent, Figure 5As shown in , the panel protection film 301 may not be disposed in the bending area BA of the display panel 300. Since the display panel 300 is bent in the bending area BA and the pad area PDA is disposed below the main area MA, the pad area PDA may overlap the main area MA. Therefore, the panel protection film 301 disposed in the main area MA of the display panel 300 and the panel protection film 301 disposed in the pad area PDA of the display panel 300 may be bonded to each other by the adhesive member 302. In an embodiment, for example, the adhesive member 302 may include a PSA.

[0107] Although not shown in the drawings, a panel lower cover may be further disposed under the panel protection film 301. The panel lower cover may be disposed under the panel protection film 301 disposed in the main area MA, and may not be disposed in the bending area BA and the pad area PDA. In an embodiment, when the display panel 300 is bent in the bending area BA so that the pad area PDA is disposed under the main area MA, the panel lower cover may at least partially overlap with the pad area PDA.

[0108] The display driving circuit 320 outputs a signal and a voltage for driving the display panel 300. In an embodiment, for example, the display driving circuit 320 may supply a data voltage to a data line. In addition, the display driving circuit 320 may supply a power supply voltage to a power supply line and supply a scan control signal to a scan driver. The display driving circuit 320 may be provided as an IC and may be provided (e.g., mounted) on the display panel 300 in a pad area PDA by a COG method, a COP method, or an ultrasonic bonding method, but is not limited thereto. In an embodiment, for example, the display driving circuit 320 may be provided (e.g., mounted) on a display circuit board 310.

[0109] The pads may include a display pad electrically connected to the display driving circuit 320 and a sensing pad electrically connected to the sensing line.

[0110] The display circuit board 310 may be attached to the pad using an anisotropic conductive film. Therefore, the leads of the display circuit board 310 may be electrically connected to the pad. In an embodiment, the display circuit board 310 may be a PCB, a chip on film, or a flexible film such as an FPCB.

[0111] The sensing driver 330 may be connected to the sensing electrodes of the sensing layer of the display panel 300. The sensing driver 330 applies a driving signal to the sensing electrodes of the sensing layer and measures the mutual capacitance value of the sensing electrodes. The driving signal may be a signal having a plurality of driving pulses. The sensing driver 330 may determine whether the user touches or approaches the display panel 300 according to the mutual capacitance value.

[0112] The sensing driver 330 may be provided on the display circuit board 310. The sensing driver 330 may be provided as an IC and provided (eg, mounted) on the display circuit board 310.

[0113] Figure 7 It is along Figure 3 A cross-sectional view taken along line VII-VII'.

[0114] refer to Figure 7 The display panel 300 may include a display unit DU, a sensing layer SL disposed on the display unit DU, and an anti-reflection layer RFL disposed on the sensing layer SL, and the display unit DU includes a substrate SUB, a thin film transistor (“TFT”) layer TFTL, a light emitting element layer EML, and a thin film encapsulation layer TFEL.

[0115] The substrate SUB may be a rigid substrate or a flexible substrate that can be bent, folded, rolled, etc. In an embodiment, for example, when the substrate SUB is a flexible substrate, the substrate SUB may include polyimide ("PI"), but is not limited thereto.

[0116] The TFT layer TFTL may be disposed on the substrate SUB. In the TFT layer TFTL, not only the TFT of each of the pixels but also a scan line, a data line, a power line, a scan control line, a routing line connecting the pad with the data line, etc. may be disposed. Each of the TFTs may include a gate electrode, a semiconductor layer, a source electrode, and a drain electrode.

[0117] The TFT layer TFTL may be disposed in the display area DA and the non-display area NDA. In an embodiment, for example, the TFTs, scan lines, data lines, and power lines of the TFT layer TFTL may be disposed in the display area DA. In addition, the scan control lines and link lines of the TFT layer TFTL may be disposed in the non-display area NDA.

[0118] The light emitting element layer EML is disposed on the TFT layer TFTL. The light emitting element layer EML may include a first electrode, a light emitting layer, a second electrode, and a pixel defining layer defining a light emitting area of ​​a pixel. The light emitting layer may be an organic light emitting layer including an organic material. In this case, the light emitting layer may include a hole transport layer, an organic light emitting layer, and an electron transport layer.

[0119] When a predetermined voltage is applied to the first electrode and a cathode voltage is applied to the second electrode through the TFT of the TFT layer TFTL, holes and electrons move to the organic light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the organic light emitting layer to emit light. The pixels of the light emitting element layer EML may be disposed in the display area DA.

[0120] The thin film encapsulation layer TFEL may be disposed on the light emitting element layer EML. The thin film encapsulation layer TFEL may prevent oxygen or moisture from penetrating into the light emitting element layer EML. To this end, the thin film encapsulation layer TFEL may include at least one inorganic film. In an embodiment, the inorganic film may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, or any combination thereof, but is not limited thereto.

[0121] In addition, the thin film encapsulation layer TFEL can protect the light emitting element layer EML from foreign matter such as dust. To this end, the thin film encapsulation layer TFEL may include at least one organic film. In an embodiment, for example, the organic film may include acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, or any combination thereof, but is not limited thereto.

[0122] The thin film encapsulation layer TFEL may be disposed throughout the display area DA and the non-display area NDA. In particular, the thin film encapsulation layer TFEL may cover the light emitting element layer EML and the TFT layer TFTL of each of the display area DA and the non-display area NDA.

[0123] The sensing layer SL may be disposed on the thin film encapsulation layer TFEL. Since the sensing layer SL is directly disposed on the thin film encapsulation layer TFEL, the thickness of the display device 10 may be reduced compared to a case where a separate sensing panel including the sensing layer SL is attached on the thin film encapsulation layer TFEL.

[0124] The sensing layer SL may include sensing electrodes driven by a capacitive method and sensing lines connecting the sensing pads with the sensing electrodes. Fig.10 As shown in FIG. 1 , the sensing electrodes of the sensing layer SL may be disposed in the sensing area SA overlapping the display area DA. In addition, the sensing lines of the sensing layer SL may be disposed in the sensing peripheral area SPA (refer to FIG. 1 ) overlapping the non-display area NDA and the protruding area PA. Fig.10 ). We will refer to it later. Figures 10 to 12 A detailed description of the sensing layer SL is described.

[0125] The anti-reflection layer RFL may be disposed on the sensing layer SL. The anti-reflection layer RFL may block external light reflection. To this end, the anti-reflection layer RFL may include a light shielding layer including a light shielding material. Therefore, since a separate polarizing plate may be omitted, the illumination of the display device 10 may be prevented from being reduced, and the thickness of the display panel 300 may be minimized.

[0126] Figure 8 Is used to describe Figure 7 A floor plan of the display unit. Fig. 9 Is used to describe Figure 8 A plan view of the first area and the second area.

[0127] exist Figure 8In the figure, for the convenience of description, only the pixels SP1 and SP2, the scan lines GL, the data lines DL, the scan control lines SCL, the fan-out lines DLL, the scan driver 340, the display driving circuit 320 and the display pads DPX of the display unit DU are shown.

[0128] refer to Figure 8 , pixels SP1 and SP2, scan lines GL, and data lines DL are arranged in the display area DA.

[0129] The pixels SP1 and SP2 may include a first pixel SP1 disposed in the first area A1 and a second pixel SP2 disposed in the second area A2. Fig. 9 A detailed description thereof is given.

[0130] refer to Fig. 9 , the first area A1 may include the first pixel SP1 and a light-transmitting portion TA surrounded by the first pixel SP1. The light-transmitting portion TA may be a region where the first pixel SP1 is not disposed and may not overlap with the first pixel SP1.

[0131] The second area A2 may not include the light-transmitting portion TA. Since the light-transmitting portion TA is partially disposed in the first area A1, the number of first pixels SP1 per unit area of ​​the first area A1 and the number of second pixels SP2 per unit area of ​​the second area A2 may be different. In an embodiment, for example, the number of first pixels SP1 per unit area of ​​the first area A1 may be smaller than the number of second pixels SP2 per unit area of ​​the second area A2. In addition, the size of the first pixel SP1 and the size of the second pixel SP2 may be different.

[0132] The light-transmitting portion TA of the first area A1 may overlap the under-panel sensors 720, 730, 740, and 750 in the thickness direction. In this case, the light-transmitting portion TA may provide a path through which light from the upper portion of the display panel 300 may be incident to the under-panel sensors 720, 730, 740, and 750. To this end, a portion of the layers configuring the TFT layer TFTL and the light-emitting element layer EML may be omitted in the light-transmitting portion TA. Therefore, even if the under-panel sensors 720, 730, 740, and 750 overlap the display panel 300, the sensing capabilities of the under-panel sensors 720, 730, 740, and 750 may be prevented or reduced as described above.

[0133] When some layers are omitted in the light-transmitting portion TA of the first area A1, a step difference may occur between the first area A1 and the second area A2, and thus a difference in optical characteristics such as edge illumination ratio and white angle dependence ("WAD") may occur. Here, WAD means a problem in which a green (or another color) tint is seen at an edge depending on the viewing angle of the viewer.

[0134] Therefore, the display device 10 in the embodiment can minimize the difference in optical characteristics between the first area A1 and the second area A2 by differently designing the gap between the pixel defining layer and the light shielding layer in the first area A1 and the second area A2. Fig.13 Describe its detailed description.

[0135] Each of the first pixel SP1 and the second pixel SP2 may include a first sub-pixel R emitting light of a first color, a second sub-pixel G emitting light of a second color, and a third sub-pixel B emitting light of a third color.

[0136] exist Fig. 9 , the first sub-pixels R and the third sub-pixels B are alternately arranged in a first column, and the second sub-pixels G are arranged in a second column, but the present invention is not limited thereto.

[0137] also, Fig. 9 The case where the sub-pixels R, G, and B have the same shape and size is shown, but the present invention is not limited thereto. In an embodiment, the sub-pixels R, G, and B may have different shapes and sizes. In this case, for example, the third sub-pixel B may have the largest size, and the second sub-pixel G may have the smallest size, but the present invention is not limited thereto.

[0138] Fig. 9 The first area A1 and the second area A2 shown in FIG. 1 merely illustrate an example of the arrangement of the pixels SP1 and SP2 , and the arrangement of the pixels SP1 and SP2 defined in the first area A1 and the second area A2 may be variously modified.

[0139] Return to reference Figure 8 , the scan lines GL may be arranged side by side in a first direction DR1, and the data lines DL may be arranged side by side in a second direction DR2 crossing the first direction DR1.

[0140] Each of the first pixel SP1 and the second pixel SP2 may be connected to at least one of the scan lines GL and any one of the data lines DL. Each of the first pixel SP1 and the second pixel SP2 may include a TFT including a driving transistor and at least one switching transistor, a light emitting element, and a capacitor.

[0141] When a scan signal is applied from the scan line GL, each of the first pixel SP1 and the second pixel SP2 may receive a data voltage of the data line DL, and may emit light by supplying a driving current to the light emitting element according to the data voltage applied to the gate electrode. The light emitting element has been described based on an organic light emitting element including a first electrode, an organic light emitting layer, and a second electrode, but the light emitting element is not limited thereto. That is, the light emitting element may be implanted as: a quantum dot light emitting element including a first electrode, a quantum dot light emitting layer, and a second electrode; an inorganic light emitting element including a first electrode, an inorganic semiconductor, and a second electrode; or a micro light emitting element including a micro light emitting diode.

[0142] The scan driver 340 is connected to the display driving circuit 320 through the scan control line SCL. Therefore, the scan driver 340 may receive a scan control signal of the display driving circuit 320. The scan driver 340 generates a scan signal according to the scan control signal and supplies the scan signal to the scan line GL.

[0143] exist Figure 8 In the embodiment, the scan driver 340 is disposed on the left outer side of the display area DA in the non-display area NDA. However, the present invention is not limited thereto. In an embodiment, for example, the scan driver 340 may be disposed on the left outer side and the right outer side of the display area DA in the non-display area NDA.

[0144] The display driving circuit 320 is connected to the display pad DPX to receive digital video data and timing signals. The display driving circuit 320 converts the digital video data into analog positive / negative data voltages and supplies the analog positive / negative data voltages to the data lines DL through the fan-out lines DLL. In addition, the display driving circuit 320 generates and supplies a scan control signal for controlling the scan driver 340 through a plurality of scan control lines SCL. The pixels SP1 and SP2 to which the data voltage is to be supplied are selected by the scan signal of the scan driver 340, and the data voltage is supplied to the selected pixels SP1 and SP2.

[0145] Fig.10 Is used to describe Figure 7 Plan view of the sensing layer. Fig.11 yes Fig.10 Magnified view of area A. Fig.12 It is along Fig.11 A cross-sectional view taken along line XII-XII'.

[0146] refer to Figures 10 to 12 , the sensing layer SL includes a sensing area SA for sensing a user's touch and a sensing peripheral area SPA disposed around the sensing area SA.

[0147] exist Fig.10In the embodiment, the sensing electrodes TE and RE of the sensing layer SL include a first sensing electrode TE and a second sensing electrode RE, and are driven by a mutual capacitance method of two layers, in which a driving signal is applied to the first sensing electrode TE, and then a change in mutual capacitance is sensed by the second sensing electrode RE. However, the present invention is not limited thereto. In an embodiment, for example, the sensing layer SL may include a first sensing electrode TE and a second sensing electrode RE without a connecting electrode BE, and may be driven by a mutual capacitance method of one layer. In an optional embodiment, the sensing layer SL may be driven by a self-capacitance method of one layer, which uses one sensing electrode to sense a change in self-capacitance.

[0148] refer to Fig.10 The sensing layer SL includes a sensing area SA for sensing a user's touch and a sensing peripheral area SPA disposed around the sensing area SA. The sensing area SA may overlap the display area DA, and the sensing peripheral area SPA may overlap the non-display area NDA and the protruding area PA.

[0149] The first sensing electrodes TE may be disposed along the second direction DR2 and may be electrically connected to each other. The second sensing electrodes RE may be disposed along the first direction DR1 crossing the second direction DR2 and may be electrically connected to each other. The first sensing electrodes TE and the second sensing electrodes RE may be electrically isolated from each other. The first sensing electrodes TE and the second sensing electrodes RE may be spaced apart from each other.

[0150] refer to Fig.11 , the first sensing electrodes TE adjacent in the second direction DR2 may be electrically connected to each other through the connecting electrode BE, and the first sensing electrodes TE adjacent in the first direction DR1 may be insulated from each other. In addition, the second sensing electrodes RE adjacent in the first direction DR1 may be electrically connected to each other, and the second sensing electrodes RE adjacent in the second direction DR2 may be electrically insulated from each other. Therefore, mutual capacitance may be generated at the intersection of the first sensing electrode TE and the second sensing electrode RE. The sensing driver 330 may determine whether the user touches or not by sensing the voltage charged in the mutual capacitance.

[0151] The connection electrode BE may be connected to the first sensing electrodes TE adjacent to each other in the second direction DR2 through the first contact hole CNT1 and the second contact hole CNT2, respectively. One end of the connection electrode BE may be connected to one of the first sensing electrodes TE adjacent to each other in the second direction DR2 through the first contact hole CNT1. The other end of the connection electrode BE may be connected to the other of the first sensing electrodes TE adjacent to each other in the second direction DR2 through the second contact hole CNT2. Fig.11A structure in which the first sensing electrodes TE are connected by a pair of connection electrodes BE is shown, but the present invention is not limited thereto. In an embodiment, for example, the connection electrode BE may include a plurality of pairs of sub-connection electrodes.

[0152] The first sensing electrodes TE and the second sensing electrodes RE may be arranged in a grid shape or a network shape. Figure 7 When the sensing layer SL including the first sensing electrode TE and the second sensing electrode RE is directly disposed on the thin film encapsulation layer TFEL as shown in , the distance between each of the first sensing electrode TE and the second sensing electrode RE of the sensing layer SL and the second electrode of the light emitting element layer EML is reduced, and thus a large amount of parasitic capacitance may be generated between the second electrode of the light emitting element layer EML and the first sensing electrode TE and the second sensing electrode RE. Since the parasitic capacitance is proportional to the overlapping area between the second electrode of the light emitting element layer EML and the first sensing electrode TE and the second sensing electrode RE of the sensing layer SL, in order to reduce the parasitic capacitance, preferably, the first sensing electrode TE and the second sensing electrode RE have a mesh shape or a network shape.

[0153] In addition, when the first sensing electrode TE and the second sensing electrode RE have a mesh shape or a network shape, a reduction in the illumination of light caused by the first sensing electrode TE and the second sensing electrode RE blocking the light output from the pixels SP1 and SP2 can be prevented. To this end, the mesh structure of the first sensing electrode TE and the second sensing electrode RE may overlap with a pixel defining layer that defines the light emitting areas of the pixels SP1 and SP2.

[0154] Return to reference Fig.10 , sensing pads TP1 and TP2 and sensing lines TL1 , TL2 , and RL may be disposed in the sensing peripheral area SPA.

[0155] The sensing pads TP1 and TP2 may be disposed on one side of the display device 10. The sensing pads TP1 and TP2 may include a first sensing pad TP1 and a second sensing pad TP2. The first sensing pad TP1 may be disposed on one side of the display pad DPX, and the second sensing pad TP2 may be disposed on the other side of the display pad DPX, but the present invention is not limited thereto.

[0156] The sensing lines TL1 , TL2 , and RL may include driving lines TL1 and TL2 connected to the first sensing electrode TE and a sensing line RL connected to the second sensing electrode RE.

[0157] The driving lines TL1 and TL2 may include a first driving line TL1 connected to a first sensing electrode TE disposed on one side of the sensing area SA and a second driving line TL2 connected to a first sensing electrode TE disposed on the other side of the sensing area SA. Here, one side of the sensing area SA may refer to a lower side of the sensing area SA, and the other side of the sensing area SA may refer to an upper side of the sensing area SA. The upper side and the lower side of the sensing area SA may be opposite to each other. In an embodiment, for example, Fig.10 As shown in the figure, the first sensing electrode TE disposed at the lower side end of the first sensing electrode TE electrically connected in the second direction DR2 can be connected to the first driving line TL1, and the first sensing electrode TE disposed at the upper side end of the first sensing electrode TE electrically connected in the second direction DR2 can be connected to the second driving line TL2.

[0158] The second driving line TL2 may be connected to the first sensing electrode TE on the upper side of the sensing area SA via the left outer side of the sensing area SA. One end of the driving lines TL1 and TL2 may be connected to the first sensing electrode TE, and the other end of the driving lines TL1 and TL2 may be connected to the first sensing pad TP1. Therefore, the sensing driver 330 may be electrically connected to the first sensing electrode TE.

[0159] The second sensing electrode RE disposed on one side of the sensing area SA may be connected to the sensing line RL. Fig.10 As shown in , the second sensing electrode RE disposed at the right end of the second sensing electrode RE electrically connected in the first direction DR1 may be connected to the sensing line RL. One end of the sensing line RL may be connected to the second sensing electrode RE, and the other end of the sensing line RL may be connected to the second sensing pad TP2. Therefore, the sensing driver 330 may be electrically connected to the second sensing electrode RE.

[0160] Although not shown in the drawings, a ground line may be further disposed outside the sensing lines TL1 , TL2 , and RL.

[0161] The ground line may be disposed at the outermost portion of the sensing layer SL. A ground voltage may be applied to the ground line. Therefore, when static electricity is applied from the outside, the static electricity may be discharged to the ground line. One end of the ground line may be electrically connected to the sensing pads TP1 and TP2.

[0162] In addition, a protection line may be provided between the sensing lines TL1, TL2, and RL and the ground line. Therefore, the protection line may minimize the coupling between the sensing lines TL1, TL2, and RL, or may minimize the coupling between the sensing lines TL1, TL2, and RL and the ground line. One end of the protection line may be electrically connected to the sensing pads TP1 and TP2.

[0163] refer to Fig.12 The sensing layer SL includes a first sensing insulating layer SIL1, a sensing contact layer SCNT, a sensing protection layer SPVX, a first sensing conductive layer, and a second sensing conductive layer. Each of the above layers may include a single film, but may also include a stacked film, which includes a plurality of films. Another layer may also be provided between adjacent layers of these layers.

[0164] The first sensing insulating layer SIL1 may include an inorganic film. However, the present invention is not limited thereto, and the first sensing insulating layer SIL1 may include an organic film, or may have a structure in which inorganic films and organic films are alternately stacked.

[0165] In an embodiment, the inorganic film may include, for example, at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide.

[0166] In an embodiment, the organic film may include, for example, at least one of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0167] The first sensing conductive layer may be disposed on the first sensing insulating layer SIL1. In an embodiment, for example, the first sensing conductive layer may include molybdenum, titanium, copper, aluminum, or an alloy thereof.

[0168] The first sensing conductive layer may include the above-mentioned connection electrode BE. As described above, the first sensing conductive layer forming the connection electrode BE may have a mesh shape. In this case, the first sensing conductive layer may not be seen by the user. In addition, the connection electrode BE may overlap with the pixel defining layer to be described later to prevent the aperture ratio of the pixel from being reduced.

[0169] The sensing contact layer SCNT may be disposed on the first sensing conductive layer and insulate the first sensing conductive layer from the second sensing conductive layer.

[0170] The sensing contact layer SCNT may include the same material as that of the above-described first sensing insulating layer SIL1, or may include one or more materials including at least one of the materials exemplified as the configuration material of the first sensing insulating layer SIL1. In an embodiment, for example, the sensing contact layer SCNT may include an inorganic film, but is not limited thereto.

[0171] The second sensing conductive layer may be disposed on the sensing contact layer SCNT. The second sensing conductive layer may include the same material as the first sensing conductive layer, or may include one or more materials including at least one of the materials exemplified as the configuration material of the first sensing conductive layer.

[0172] The second sensing conductive layer may include the first sensing electrode TE and the second sensing electrode RE described above. The first sensing electrode TE may be electrically connected to the connection electrode BE through contact holes CNT1 and CNT2 that penetrate the sensing contact layer SCNT to expose one end of the connection electrode BE.

[0173] As described above, the second sensing conductive layer forming the first sensing electrode TE and the second sensing electrode RE may have a mesh shape. In this case, the second sensing conductive layer may not be visible to the user. In addition, the first sensing electrode TE and the second sensing electrode RE may overlap with the pixel defining layer to be described later to prevent the aperture ratio of the pixel from being reduced.

[0174] The sensing protection layer SPVX may be disposed on the second sensing conductive layer. The sensing protection layer SPVX may include an organic film. However, the present invention is not limited thereto, and the sensing protection layer SPVX may include an inorganic film, or may have a structure in which an organic film and an inorganic film are alternately stacked.

[0175] In an embodiment, the organic film may include, for example, at least one of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0176] In an embodiment, the inorganic film may include, for example, at least one of aluminum oxide, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide.

[0177] Hereinafter, the cross-sectional structure of the first area A1 and the second area A2 will be described in detail.

[0178] Fig.13 It is along Fig. 9 A cross-sectional view taken along line XIIIA-XIIIA' and line XIIIB-XIIIB'.

[0179] refer to Fig.13 The TFT layer TFTL may be disposed on the substrate SUB. The TFT layer TFTL may include a semiconductor layer ACT, a first insulating layer IL1, a first conductive layer, a second insulating layer IL2, a second conductive layer, a third insulating layer IL3, a third conductive layer, and a fourth insulating layer IL4.

[0180] Each of the above-mentioned layers may include a single film, but may also include a stacked film including a plurality of films. Another layer may be provided between adjacent layers in these layers.

[0181] The semiconductor layer ACT may be disposed on the substrate SUB. A buffer layer may be further disposed between the semiconductor layer ACT and the substrate SUB. The buffer layer may prevent diffusion of impurity ions, prevent penetration of moisture, and perform a surface planarization function. In an embodiment, for example, the buffer layer may include silicon nitride, silicon oxide, or silicon oxynitride, but is not limited thereto.

[0182] The semiconductor layer ACT forms a channel of the TFT of each of the first pixel SP1 and the second pixel SP2. In an embodiment, for example, the semiconductor layer ACT may include polysilicon. In an embodiment, for example, the polysilicon may be provided by crystallizing amorphous silicon.

[0183] When the semiconductor layer ACT includes polysilicon, the ion-doped semiconductor layer ACT may have conductivity. Therefore, the semiconductor layer ACT may include a source region and a drain region of the TFT and a channel region. The source region and the drain region may be connected to both sides of each channel region.

[0184] In another embodiment, the semiconductor layer ACT may include single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The oxide semiconductor may include, for example, a binary compound (AB) including indium, zinc, gallium, tin, titanium, aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y ) or quaternary compounds (AB x C y D z ). In addition, the semiconductor layer ACT may include indium-tin-zinc oxide ("ITZO") or indium-gallium-zinc oxide ("IGZO").

[0185] The first insulating layer IL1 is disposed on the semiconductor layer ACT. The first insulating layer IL1 may be disposed on the entire surface of the substrate SUB. That is, the first insulating layer IL1 may be disposed in the entire first area A1 and the second area A2.

[0186] The first insulating layer IL1 may be a gate insulating film having a gate insulating function. The first insulating layer IL1 may include a silicon compound or a metal oxide. In an embodiment, for example, the first insulating layer IL1 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, or any combination thereof. The first insulating layer IL1 may be a single film or a multilayer film including stacked films of different materials.

[0187] The first conductive layer is disposed on the first insulating layer IL1. In an embodiment, for example, the first conductive layer may include one or more metals, the one or more metals including at least one of molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu). The first conductive layer may be a single film or a multi-layer film.

[0188] The first conductive layer may include a gate electrode GE of a TFT of each of the first pixel SP1 and the second pixel SP2 and a first electrode of a capacitor.

[0189] The second insulating layer IL2 is disposed on the first conductive layer. The second insulating layer IL2 may cover the gate electrode GE of each of the first pixel SP1 and the second pixel SP2. The second insulating layer IL2 may not be disposed in the light-transmitting portion TA to prevent the transmittance of the light-transmitting portion TA of the first area A1 from being reduced.

[0190] The second insulating layer IL2 may insulate the first conductive layer from the second conductive layer. The second insulating layer IL2 may include the same material as the first insulating layer IL1 described above, or may include one or more materials including at least one of the materials exemplified as the configuration material of the first insulating layer IL1.

[0191] The second conductive layer is disposed on the second insulating layer IL2. In an embodiment, for example, the second conductive layer may include one or more metals, the one or more metals including at least one of aluminum (Al), molybdenum (Mo), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu). The second conductive layer may be a single film or a multilayer film. In an embodiment, for example, the second conductive layer may include a stacked structure such as Ti / Al / Ti, Mo / Al / Mo, Mo / AlGe / Mo or Ti / Cu.

[0192] The second conductive layer may include source and drain electrodes SE and DE of the TFT of each of the first and second pixels SP1 and SP2. The source and drain electrodes SE and DE may be connected to the source and drain regions of the semiconductor layer ACT through contact holes passing through the second and first insulating layers IL2 and IL1, respectively.

[0193] The third insulating layer IL3 covers the second conductive layer. The third insulating layer IL3 may cover the source electrode SE and the drain electrode DE of each of the first pixel SP1 and the second pixel SP2. The third insulating layer IL3 may not be disposed in the light-transmitting portion TA to prevent the transmittance of the light-transmitting portion TA of the first area A1 from being reduced.

[0194] The third insulating layer IL3 may be a through-hole layer. In an embodiment, the third insulating layer IL3 may include an organic insulating material such as acrylic resin (polyacrylate resin), epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene ("BCB") or any combination thereof.

[0195] The third conductive layer is disposed on the third insulating layer IL3. The third conductive layer may include the same material as that of the second conductive layer, or may include one or more materials including at least one of the materials exemplified as the configuration material of the second conductive layer.

[0196] The third conductive layer may include a connection electrode CE of the TFT of each of the first pixel SP1 and the second pixel SP2. The connection electrode CE may make contact with the drain electrode DE through a contact hole passing through the third insulating layer IL3.

[0197] The fourth insulating layer IL4 covers the third conductive layer. The fourth insulating layer IL4 may cover the connection electrode CE of each of the first pixel SP1 and the second pixel SP2. The fourth insulating layer IL4 may not be disposed in the light-transmitting portion TA to prevent the transmittance of the light-transmitting portion TA of the first area A1 from being reduced.

[0198] In an embodiment, the third conductive layer and / or the fourth insulating layer IL4 may be omitted. In this case, the third insulating layer IL3 may be a through-hole layer. That is, the first electrode ANO to be described later may contact the drain electrode DE through a contact hole passing through the third insulating layer IL3.

[0199] The fourth insulating layer IL4 may be a via layer. The fourth insulating layer IL4 may include the same material as that of the third insulating layer IL3 described above, or may include one or more materials including at least one of the materials exemplified as the configuration material of the third insulating layer IL3.

[0200] The light emitting element layer EML may be disposed on the TFT layer TFTL. The light emitting element layer EML may include a first electrode ANO, a light emitting layer EL, a second electrode CAT, and pixel defining layers PDL1 and PDL2.

[0201] The light emitting element layer EML may be disposed throughout the first pixel SP1 and the second pixel SP2, and may not be disposed in the light-transmitting portion TA. Therefore, the light-transmitting portion TA may provide a path through which light from the upper portion of the display panel 300 may be incident on the under-panel sensors 720, 730, 740, and 750. In the accompanying drawings, in the light-transmitting portion TA, the first electrode ANO, the light-emitting layer EL, and / or the pixel defining layers PDL1 and PDL2 of the light-emitting element layer EML are omitted, and the second electrode CAT is disposed. However, the present invention is not necessarily limited thereto. In an embodiment, in the light-transmitting portion TA, the first electrode ANO, the second electrode CAT, and / or the pixel defining layers PDL1 and PDL2 may be omitted, and the light-emitting layer EL may be disposed.

[0202] The first electrode ANO is disposed on the fourth insulating layer IL4. The first electrode ANO may be electrically connected to the TFT of each of the first pixel SP1 and the second pixel SP2. In particular, the first electrode ANO may contact the connection electrode CE through a contact hole passing through the fourth insulating layer IL4, and may be electrically connected to the drain electrode DE of the TFT through the connection electrode CE. The anode electrode of each of the first pixel SP1 and the second pixel SP2 may include the first electrode ANO.

[0203] In the upper light emitting structure that emits light to the second electrode CAT based on the light emitting layer EL, the first electrode ANO may include a metal material having high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and indium tin oxide ("ITO") (ITO / Al / ITO), a stacked structure of APC alloy and ITO ("ITO / APC / ITO"), or an APC alloy. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0204] In the lower light emitting structure that emits light to the first electrode ANO based on the light emitting layer EL, the first electrode ANO may include a transparent metal material ("TCO") (such as ITO or indium-zinc oxide ("IZO") that can transmit light) or a semi-transparent metal material (such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag)). When the first electrode ANO includes the semi-transparent metal material, the light emitting efficiency can be improved by the microcavity.

[0205] The pixel defining layers PDL1 and PDL2 may separate the first electrode ANO on the fourth insulating layer IL4 to define light emitting regions of the pixels SP1 and SP2. The pixel defining layers PDL1 and PDL2 may cover edges of the first electrode ANO.

[0206] In an embodiment, for example, the pixel defining layers PDL1 and PDL2 may include an organic film including at least one of acrylic resin, epoxy resin, phenol resin, polyamide resin, and polyimide resin.

[0207] In addition, the pixel defining layers PDL1 and PDL2 may include a light absorbing material or may be coated with a light absorber to absorb light introduced from the outside. In an embodiment, for example, the pixel defining layers PDL1 and PDL2 may include a carbon-based black pigment. However, the present invention is not limited thereto, and the pixel defining layers PDL1 and PDL2 may also include an opaque metal material such as an alloy of molybdenum and titanium (MoTi), chromium (Cr), molybdenum (Mo), tungsten (W), vanadium (V), niobium (Nb), tantalum (Ta), manganese (Mn), cobalt (Co), nickel (Ni), or any combination thereof having a high light absorption rate.

[0208] The pixel defining layers PDL1 and PDL2 may include a first pixel defining layer PDL1 that defines a light emitting region of a first pixel SP1 and a second pixel defining layer PDL2 that defines a light emitting region of a second pixel SP2 .

[0209] The thickness of the first pixel defining layer PDL1 may be substantially the same as the thickness of the second pixel defining layer PDL2 .

[0210] In addition, the width of the first pixel defining layer PDL1 in one direction may be substantially the same as the width of the second pixel defining layer PDL2 in one direction. At this time, the width of the pixel defining layer PDL1 (or PDL2) in one direction may mean the distance between the ends of the pixel defining layer PDL1 (or PDL2), wherein the ends are respectively adjacent to the light emitting layers EL disposed on two adjacent first electrodes ANO.

[0211] The light emitting layer EL is disposed on the first electrode ANO and the pixel defining layers PDL1 and PDL2 .

[0212] The light emitting layer EL may include an organic material and emit light of a predetermined color. In an embodiment, for example, the light emitting layer EL may include a hole transport layer, an organic material layer, and an electron transport layer. In an embodiment, for example, the light emitting layer ELR of the first sub-pixel R of each of the first area A1 and the second area A2 may emit red light, the light emitting layer ELG of the second sub-pixel G may emit green light, and the light emitting layer ELB of the third sub-pixel B may emit blue light.

[0213] In an alternative embodiment, the light emitting layer EL of each of the first area A1 and the second area A2 may include one or more layers to emit white light, ultraviolet light, or blue light. In this case, the first sub-pixel R may overlap with a red light filter that transmits red light, the second sub-pixel G may overlap with a green light filter that transmits green light, and the third sub-pixel B may overlap with a blue light filter that transmits blue light.

[0214] In an optional embodiment, the first sub-pixel R may overlap with a red light wavelength conversion layer that converts ultraviolet light or blue light into red light, the second sub-pixel G may overlap with a green light wavelength conversion layer that converts ultraviolet light or blue light into green light, and the third sub-pixel B may overlap with a blue light wavelength conversion / transmission layer that converts ultraviolet light into blue light or transmits blue light.

[0215] The second electrode CAT is disposed on the light emitting layer EL and the pixel defining layers PDL1 and PDL2. When a separate spacer is further disposed on the pixel defining layers PDL1 and PDL2, the second electrode CAT may be disposed on the spacer.

[0216] The second electrode CAT may cover the light emitting layer EL of the pixels SP1 and SP2. The second electrode CAT may be a common layer commonly provided in the pixels SP1 and SP2. A covering layer may also be provided on the second electrode CAT.

[0217] In the upper light emitting structure, the second electrode CAT may include a TCO (such as ITO or IZO) that can transmit light or a semi-transparent metal material (such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode CAT includes the semi-transparent metal material, the light emitting efficiency can be improved through the microcavity.

[0218] In the lower light emitting structure, the second electrode CAT may include a metal material with high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), a stacked structure of APC alloy and ITO (ITO / APC / ITO), or an APC alloy.

[0219] The thin film encapsulation layer TFEL is disposed on the light emitting element layer EML.

[0220] The thin film encapsulation layer TFEL may be disposed on the entire surface of the substrate SUB. That is, the thin film encapsulation layer TFEL may be disposed throughout the first area A1 and the second area A2.

[0221] The minimum thickness of the thin film encapsulation layer TFEL of the first area A1 may be different from the minimum thickness of the thin film encapsulation layer TFEL of the second area A2. Here, the minimum thickness of the thin film encapsulation layer TFEL of each of the areas A1 and A2 may be defined as the minimum value of the length from one surface of the thin film encapsulation layer TFEL to the other surface of the thin film encapsulation layer TFEL in the third direction DR3.

[0222] As described above, when a portion of the TFT layer TFTL is omitted in the light-transmitting portion TA, a step difference may be provided between the light-transmitting portion TA and the first pixel SP1, and thus the thin film encapsulation material layer coated in the first area A1 may flow into the light-transmitting portion TA. Therefore, the minimum thickness of the thin film encapsulation layer TFEL of the first area A1 may be relatively smaller than the minimum thickness of the thin film encapsulation layer TFEL of the second area A2.

[0223] The thin film encapsulation layer TFEL may include a first encapsulation layer TFE1, a second encapsulation layer TFE2, and a third encapsulation layer TFE3 disposed between the first encapsulation layer TFE1 and the second encapsulation layer TFE2. Each of the above layers may include a single film, but may also include a stacked film, which includes a plurality of films. Another layer may also be disposed between adjacent layers of these layers.

[0224] The first encapsulation layer TFE1 may be disposed on the second electrode CAT. The first encapsulation layer TFE1 may be disposed on the entire surface of the substrate SUB. The first encapsulation layer TFE1 may be an inorganic film. In an embodiment, for example, the inorganic film may include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxide nitride (SiON x ) or any combination thereof, but not limited thereto.

[0225] The second encapsulation layer TFE2 may be disposed on the first encapsulation layer TFE1. The second encapsulation layer TFE2 may be disposed on the entire surface of the substrate SUB. The second encapsulation layer TFE2 may be an inorganic film. The second encapsulation layer TFE2 may include the same material as that of the first encapsulation layer TFE1, or may include at least one material including at least one of the materials exemplified as the configuration material of the first encapsulation layer TFE1.

[0226] The third encapsulation layer TFE3 may be disposed between the first encapsulation layer TFE1 and the second encapsulation layer TFE2. The third encapsulation layer TFE3 may planarize a step difference caused by the TFT layer TFTL and the light emitting element layer EML.

[0227] The third encapsulation layer TFE3 may be an organic film. In an embodiment, for example, the organic film may include at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin, but is not limited thereto.

[0228] The thickness of the third encapsulation layer TFE3 may be greater than the thickness of the first encapsulation layer TFE1 and / or the thickness of the second encapsulation layer TFE2 .

[0229] In addition, the minimum thickness of the third encapsulation layer TFE3 of the first area A1 may be different from the minimum thickness of the third encapsulation layer TFE3 of the second area A2. Here, the minimum thickness of the third encapsulation layer TFE3 of each of the areas A1 and A2 may be defined as the minimum value of the length from one surface of the third encapsulation layer TFE3 to the other surface of the third encapsulation layer TFE3 in the third direction DR3.

[0230] As described above, when a portion of the TFT layer TFTL is omitted in the light-transmitting portion TA, a step difference may be provided between the light-transmitting portion TA and the first pixel SP1, and thus the third encapsulation material layer coated in the first area A1 may flow into the light-transmitting portion TA. Therefore, the minimum thickness of the third encapsulation layer TFE3 of the first area A1 may be less than the minimum thickness of the third encapsulation layer TFE3 of the second area A2. In an embodiment, for example, the minimum thickness of the third encapsulation layer TFE3 of the first area A1 may be about 4 micrometers (μm) or less, and the minimum thickness of the third encapsulation layer TFE3 of the second area A2 may be about 8 μm or less, but is not limited thereto.

[0231] The sensing layer SL may be disposed on the thin film encapsulation layer TFEL.

[0232] As described above, since the sensing layer SL is directly disposed on the thin film encapsulation layer TFEL, the thickness of the display device 10 may be reduced compared to a case in which a separate sensing panel including the sensing layer SL is attached on the thin film encapsulation layer TFEL.

[0233] The sensing layer SL may include a first sensing insulating layer SIL1 , a first sensing conductive layer SCL1 , a sensing contact layer SCNT, a second sensing conductive layer SCL2 , and a sensing protection layer SPVX.

[0234] The first sensing insulating layer SIL1 may be disposed on the second encapsulation layer TFE2. The first sensing insulating layer SIL1 may be directly disposed on the second encapsulation layer TFE2, and may be in direct contact with one surface of the second encapsulation layer TFE2.

[0235] The first sensing insulating layer SIL1 may be disposed on the entire surface of the substrate SUB. That is, the first sensing insulating layer SIL1 may be disposed throughout the first area A1 and the second area A2.

[0236] The first sensing conductive layer SCL1 is disposed on the first sensing insulating layer SIL1. The first sensing conductive layer SCL1 may include the connection electrode CE described above.

[0237] The sensing contact layer SCNT is disposed on the first sensing conductive layer SCL1 . The sensing contact layer SCNT may insulate the first sensing conductive layer SCL1 from the second sensing conductive layer SCL2 .

[0238] As described above, when the sensing contact layer SCNT includes an inorganic film, the sensing contact layer SCNT may not be disposed in the light-transmitting portion TA to prevent the transmittance of the light-transmitting portion TA from being reduced. Therefore, the sensing contact layer SCNT may not overlap with the under-panel sensors 720, 730, 740, and 750.

[0239] The second sensing conductive layer SCL2 is disposed on the sensing contact layer SCNT. The second sensing conductive layer SCL2 may include the first sensing electrode TE and the second sensing electrode RE, etc. The second sensing conductive layer SCL2 may be electrically connected to the first sensing conductive layer SCL1 through a contact hole passing through the sensing contact layer SCNT.

[0240] In another embodiment, the first sensing conductive layer SCL1 may include the first sensing electrode TE and the second sensing electrode RE. In yet another embodiment, the first sensing conductive layer SCL1 may include one of the first sensing electrode TE and the second sensing electrode RE, and the second sensing conductive layer SCL2 may include the other of the first sensing electrode TE and the second sensing electrode RE.

[0241] The sensing protection layer SPVX is disposed on the second sensing conductive layer SCL2. The sensing protection layer SPVX may be disposed on the entire surface of the substrate SUB. That is, the sensing protection layer SPVX may be disposed in the entire first area A1 and the second area A2.

[0242] In addition, reference Fig.12 A detailed description of the first sensing insulating layer SIL1 , the first sensing conductive layer SCL1 , the sensing contact layer SCNT, the second sensing conductive layer SCL2 , and the sensing protection layer SPVX is described, and thus a repeated description is omitted.

[0243] The anti-reflection layer RFL is disposed on the sensing layer SL. Since the anti-reflection layer RFL can block external light reflection, a separate polarizer (or a separate polarizing plate) can be omitted. Therefore, as described above, the thickness of the display panel 300 can be minimized while preventing the illumination of the display device 10 from being reduced.

[0244] The anti-reflection layer RFL may include light shielding layers BM1 and BM2 and color filters CF1 and CF2. In an embodiment, the anti-reflection layer RFL may further include a planarization layer OC disposed on the color filters CF1 and CF2.

[0245] The light shielding layers BM1 and BM2 may be disposed on the sensing protection layer SPVX.

[0246] The light shielding layers BM1 and BM2 may include a light absorbing material or may be coated with a light absorber to absorb light introduced from the outside. In this case, the light shielding layers BM1 and BM2 may include a carbon-based black pigment. However, the present invention is not limited thereto, and the light shielding layers BM1 and BM2 may also include an opaque metal material such as an alloy of molybdenum and titanium (MoTi), chromium (Cr), molybdenum (Mo), tungsten (W), vanadium (V), niobium (Nb), tantalum (Ta), manganese (Mn), cobalt (Co), nickel (Ni), or any combination thereof having a high light absorption rate.

[0247] The light blocking layers BM1 and BM2 may overlap the pixel defining layers PDL1 and PDL2 in the thickness direction (ie, the third direction DR3 ).

[0248] The light shielding layers BM1 and BM2 may include a first light shielding layer BM1 disposed in the first area A1 and a second light shielding layer BM2 disposed in the second area A2.

[0249] The first light shielding layer BM1 may overlap the first pixel defining layer PDL1 in the thickness direction. In addition, the second light shielding layer BM2 may overlap the second pixel defining layer PDL2 in the thickness direction.

[0250] In an embodiment, the width of the first light shielding layer BM1 in one direction may be different from the width of the second light shielding layer BM2 in one direction. In an embodiment, for example, the width of the first light shielding layer BM1 in one direction may be greater than the width of the second light shielding layer BM2 in one direction.

[0251] In an embodiment, the width of the first light shielding layer BM1 in one direction may be different from the width of the first pixel defining layer PDL1 in one direction. In addition, the width of the second light shielding layer BM2 in one direction may be different from the width of the second pixel defining layer PDL2 in one direction. In an embodiment, for example, the width of the first light shielding layer BM1 in one direction may be smaller than the width of the first pixel defining layer PDL1 in one direction. In addition, the width of the second light shielding layer BM2 in one direction may be smaller than the width of the second pixel defining layer PDL2 in one direction. Here, the width of the light shielding layer BM1 (or BM2) in one direction may mean the distance between the ends of the light shielding layer BM1 (or BM2), where the ends are respectively adjacent to two adjacent color filters CF1 (or CF2).

[0252] When the width of the light shielding layers BM1 and BM2 in one direction is smaller than that of the pixel defining layers PDL1 and PDL2 in one direction, since light emitted from the light emitting element layer EML can be absorbed and minimized by the light shielding layers BM1 and BM2 , the edge illumination ratio can be improved and WAD can be improved.

[0253] However, since the external light absorption function of the light shielding layers BM1 and BM2 is reduced when the widths of the light shielding layers BM1 and BM2 become too small, the widths of the light shielding layers BM1 and BM2 may be adjusted in consideration of the edge illumination ratio, WAD, and reflectivity.

[0254] When the width of the light shielding layers BM1 and BM2 in one direction is smaller than the width of the pixel defining layers PDL1 and PDL2 in one direction, as shown in FIG. Fig.13 As shown in FIG, predetermined gaps G1 and G2 may be defined between end portions of the pixel defining layers PDL1 and PDL2 and end portions of the light shielding layers BM1 and BM2.

[0255] In particular, the display device 10 may include a first gap G1 defined by a length from one end of the first pixel defining layer PDL1 to one end of the first light shielding layer BM1 in one direction, and a second gap G2 defined by a length from one end of the second pixel defining layer PDL2 to one end of the second light shielding layer BM2 in one direction. Here, the first gap G1 may be defined as a length from an edge of an opening of the first pixel defining layer PDL1 to an edge of an opening of the first light shielding layer BM1 in one direction. In addition, the second gap G2 may be defined as a length from an edge of an opening of the second pixel defining layer PDL2 to an edge of an opening of the second light shielding layer BM2 in one direction.

[0256] In an embodiment, the width of the first gap G1 may be different from the width of the second gap G2. In an embodiment, for example, the width of the first gap G1 may be smaller than the width of the second gap G2.

[0257] In particular, the width of the first gap G1 and the width of the second gap G2 may be determined based on the following Equation 1:

[0258] [Equation 1]

[0259] G2=G1+a×D TFE3 ,

[0260] Here, G2 may represent the width of the second gap G2, G1 may represent the width of the first gap G1, and D TFE3 may denote a difference between the minimum thickness of the third encapsulation layer TFE3 of the first area A1 and the minimum thickness of the third encapsulation layer TFE3 of the second area A2, and a may denote a variable set within a range of 0.4 to 0.6. In an embodiment, for example, the variable a may be 0.5, but is not limited thereto.

[0261] As described above, when a step difference occurs between the first area A1 and the second area A2 due to the light-transmitting portion TA, a thickness difference between the third encapsulation layer TFE3 of the first area A1 and the third encapsulation layer TFE3 of the second area A2 may be caused.

[0262] When the thickness of the third encapsulation layer TFE3 of the first pixel SP1 is different from the thickness of the third encapsulation layer TFE3 of the second pixel SP2, due to the different distances from the light emitting element layer EML to the anti-reflection layer RFL of each of the pixels SP1 and SP2, differences in optical characteristics such as edge illumination ratio and WAD regarding viewing angle may occur in the first pixel SP1 and the second pixel SP2.

[0263] Therefore, considering the thickness difference of the third encapsulation layer TFE3 in the first pixel SP1 and the second pixel SP2, by designing the second gap G2 to be larger than the first gap G1, the optical characteristic difference caused by the thickness difference of the third encapsulation layer TFE3 can be minimized.

[0264] Color filters CF1 and CF2 may be disposed on the light blocking layers BM1 and BM2.

[0265] One surface of the sensing protection layer SPVX exposed by the light shielding layers BM1 and BM2 may be defined as an opening. The color filters CF1 and CF2 may be disposed in the opening defined by the light shielding layers BM1 and BM2. In this case, the color filters CF1 and CF2 may be in direct contact with the sensing protection layer SPVX in the opening. In addition, the color filters CF1 and CF2 may extend from the edge of the opening to the upper surface of the light shielding layers BM1 and BM2, and may be in direct contact with the upper surface of the light shielding layers BM1 and BM2.

[0266] The color filters CF1 and CF2 may include a first color filter CF1 disposed in the first area A1 and a second color filter CF2 disposed in the second area A2.

[0267] The first color filter CF1 may overlap the light emitting region of the first pixel SP1, and the second color filter CF2 may overlap the light emitting region of the second pixel SP2.

[0268] In particular, the first color filter CF1 may include a first red color filter CF1R overlapping the emission area of ​​the first subpixel R of the first pixel SP1, a first green color filter CF1G overlapping the emission area of ​​the second subpixel G, and a first blue color filter CF1B overlapping the emission area of ​​the third subpixel B.

[0269] In addition, the second color filter CF2 may include a second red filter CF2R overlapping the emission area of ​​the first subpixel R of the second pixel SP2, a second green filter CF2G overlapping the emission area of ​​the second subpixel G, and a second blue filter CF2B overlapping the emission area of ​​the third subpixel B.

[0270] According to the above-mentioned embodiment, by differently designing the gaps G1 and G2 between the pixel defining layers PDL1 and PDL2 and the light shielding layers BM1 and BM2 in the first area A1 provided with the light-transmitting portion TA and the second area A2 as the remaining area, the difference in optical properties regarding the viewing angle between the first area A1 and the second area A2 can be minimized.

[0271] Hereinafter, a display device in another embodiment of the present invention will be described. The same configuration as that already described in the following embodiment will be referred to by the same reference numerals, and repeated description will be omitted or simplified.

[0272] Fig.14 is a cross-sectional view of another embodiment of a display device.

[0273] refer to Fig.14 The display device in the embodiment shown is Figures 1 to 13 The embodiment of the present invention is different in that the thickness of the first pixel defining layer PDL1 and the thickness of the second pixel defining layer PDL2 ′ are different from each other.

[0274] according to Fig.13 In the embodiment, the optical characteristic variation with respect to the viewing angle of the first area A1 and the second area A2 may be improved according to the thickness difference of the third encapsulation layer TFE3, but an optical characteristic deviation problem with respect to reflectivity may occur.

[0275] In the illustrated embodiment, the thickness of the second pixel defining layer PDL2' may be greater than the thickness of the first pixel defining layer PDL1. In an embodiment, for example, when the thickness of the first pixel defining layer PDL1 is about 1.2 μm to about 1.8 μm, the thickness of the second pixel defining layer PDL2' may be about 1.6 μm to about 2.4 μm, but is not limited thereto.

[0276] When the thickness of the second pixel defining layer PDL2' is relatively large, even if the width of the second light shielding layer BM2 is relatively small, since the external light absorption rate of the second pixel defining layer PDL2' can be increased, the reflectivity difference between the first area A1 and the second area A2 can be minimized.

[0277] Due to the reference Figures 1 to 13 The cross-sectional structure of the display device other than the above-described differences is described, and thus repeated description is omitted.

[0278] Fig.15 is a cross-sectional view of another embodiment of a display device.

[0279] refer to Fig.15 The display device in the embodiment shown is Figures 1 to 13The embodiment of the present invention is different in that the sensing layer SL′ further includes a second sensing insulating layer SIL2 and a sensing planarization layer SOC.

[0280] In particular, the second sensing insulating layer SIL2 may be disposed between the first sensing insulating layer SIL1 and the first sensing conductive layer SCL1 .

[0281] The second sensing insulating layer SIL2 may be disposed on the entire surface of the substrate SUB. That is, the second sensing insulating layer SIL2 may be disposed throughout the first area A1 and the second area A2.

[0282] The second sensing insulating layer SIL2 may include the same material as that of the first sensing insulating layer SIL1 , or may include one or more materials including at least one of the materials exemplified as the configuration material of the first sensing insulating layer SIL1 .

[0283] The sensing planarization layer SOC may be disposed between the first sensing insulating layer SIL1 and the second sensing insulating layer SIL2 .

[0284] One surface of the sensing planarization layer SOC may be in direct contact with the first sensing insulation layer SIL1 , and the other surface of the sensing planarization layer SOC may be in direct contact with the second sensing insulation layer SIL2 .

[0285] The sensing planarization layer SOC may be disposed on the entire surface of the substrate SUB. That is, the sensing planarization layer SOC may be disposed throughout the first area A1 and the second area A2.

[0286] The sensing planarization layer SOC may planarize a thickness difference between the thin film encapsulation layer TFEL of the first area A1 and the thin film encapsulation layer TFEL of the second area A2 caused by the light-transmitting portion TA.

[0287] The thickness of the sensing planarization layer SOC of the first area A1 may be different from the thickness of the sensing planarization layer SOC of the second area A2 .

[0288] In an embodiment, for example, the thickness of the sensing planarization layer SOC of the first area A1 may be greater than the thickness of the sensing planarization layer SOC of the second area A2 , but is not limited thereto.

[0289] The sensing planarization layer SOC may include the same material as that of the sensing protection layer SPVX, or may include one or more materials including at least one of the materials exemplified as the configuration materials of the sensing protection layer SPVX. The sensing planarization layer SOC may include an organic film, but is not limited thereto.

[0290] As described above, when the sensing layer SL' includes the sensing planarization layer SOC, the thickness difference between the thin film encapsulation layer TFEL of the first area A1 and the thin film encapsulation layer TFEL of the second area A2 can be compensated. That is, since the distance difference from the light emitting element layer EML to the anti-reflection layer RFL of each of the pixels SP1 and SP2 can be minimized, the difference in optical characteristics such as the edge illumination ratio and WAD between the first area A1 and the second area A2 can be minimized.

[0291] In addition, when the distance difference from the light emitting element layer EML to the anti-reflection layer RFL of each of the pixels SP1 and SP2 is minimized, the first gap G1 and the second gap G2 may be substantially the same. That is, since the width of the first light shielding layer BM1 and the width of the second light shielding layer BM2 may be substantially the same, the reflectivity difference between the first area A1 and the second area A2 may be minimized.

[0292] Due to the reference Figures 1 to 13 The cross-sectional structure of the sensing layer SL' except for the above-mentioned differences is described, and thus a repeated description is omitted.

[0293] Fig.16 is a cross-sectional view of another embodiment of a display device.

[0294] refer to Fig.16 The display device in the embodiment shown is Fig.15 The embodiment of the present invention is different in that the sensing contact layer SCNT′ overlaps with the light-transmitting portion TA.

[0295] The sensing contact layer SCNT' may include the same material as the material of the sensing planarization layer SOC and / or the material of the sensing protection layer SPVX described above, or may include one or more materials including at least one of the materials exemplified as the configuration material of the sensing planarization layer SOC and / or the configuration material of the sensing protection layer SPVX. In an embodiment, for example, the sensing contact layer SCNT' may include an organic film, but is not limited thereto.

[0296] When the sensing contact layer SCNT' includes an organic film, the sensing contact layer SCNT' may be disposed on the entire surface of the substrate SUB. The sensing contact layer SCNT' may be disposed throughout the first area A1 and the second area A2.

[0297] In addition, the sensing contact layer SCNT′ may overlap the light transmitting portion TA. That is, the sensing contact layer SCNT′ may overlap the under-panel sensors 720, 730, 740, and 750 in the thickness direction.

[0298] The sensing contact layer SCNT' can further planarize the thickness difference between the thin film encapsulation layer TFEL of the first area A1 and the thin film encapsulation layer TFEL of the second area A2 caused by the light-transmitting portion TA. As described above, since the thickness difference between the thin film encapsulation layer TFEL of the first area A1 and the thin film encapsulation layer TFEL of the second area A2 can be compensated by the sensing planarization layer SOC, the optical characteristic difference between the first area A1 and the second area A2 can be minimized.

[0299] In addition, since the distance difference from the light emitting element layer EML to the anti-reflection layer RFL of each of the pixels SP1 and SP2 can be minimized by the sensing contact layer SCNT', the first gap G1 and the second gap G2 can be substantially the same. That is, as described above, since the width of the first light shielding layer BM1 and the width of the second light shielding layer BM2 can be substantially the same, the reflectivity difference between the first area A1 and the second area A2 can be minimized.

[0300] Due to the reference Figures 1 to 13 The cross-sectional structure of the sensing layer SL″ other than the above-mentioned differences is described, and thus repeated description is omitted.

[0301] It will be appreciated by those skilled in the art that the present invention may be implemented in a modified form without departing from the above essential features. Therefore, the disclosed method should be considered from a descriptive perspective rather than a restrictive perspective. The scope of the present invention is not limited to the above description, and various modifications may be made within the concept of the present invention.

Claims

1. A display device, comprising: The display panel comprises a first area and a second area, wherein a first pixel is defined in the first area and a second pixel is defined in the second area, and the display panel comprises: The light emitting element layer comprises: a first pixel defining layer, wherein an opening defining a light emitting area of ​​the first pixel is defined in the first pixel defining layer; and a second pixel defining layer, wherein an opening defining a light emitting area of ​​the second pixel is defined in the second pixel defining layer; and An anti-reflection layer is disposed on the light-emitting element layer and includes: a first light shielding layer, overlapping the first pixel defining layer in a thickness direction of the display panel; and a second light shielding layer, overlapping the second pixel defining layer in the thickness direction; and a sensor under the panel, overlapping the first area in the thickness direction; in, In the display device, a first gap is defined by a length from an edge of the opening of the first pixel defining layer to an edge of an opening of the first light shielding layer in a predetermined direction, In the display device, a second gap is defined by a length from an edge of the opening of the second pixel defining layer to an edge of an opening of the second light shielding layer in the predetermined direction, and The first gap is smaller than the second gap.

2. The display device according to claim 1, further comprising: A thin film encapsulation layer is disposed between the light emitting element layer and the anti-reflection layer, The minimum thickness of the thin film encapsulation layer in the first region is smaller than the minimum thickness of the thin film encapsulation layer in the second region.

3. The display device according to claim 2, wherein: The thin film encapsulation layer comprises: A first encapsulation layer; A second packaging layer is disposed on the first packaging layer; and a third encapsulation layer, disposed between the first encapsulation layer and the second encapsulation layer, and A minimum thickness of the third encapsulation layer in the first region is smaller than a minimum thickness of the third encapsulation layer in the second region.

4. The display device according to claim 3, wherein: The first gap and the second gap are determined based on the following equations: G2=G1+a×D TFE3 , Here, G2 represents the width of the second gap in the predetermined direction, G1 represents the width of the first gap in the predetermined direction, and D TFE3 represents a difference between the minimum thickness of the third encapsulation layer of the first region and the minimum thickness of the third encapsulation layer of the second region, and a is a variable set within a range of 0.4 to 0.

6.

5. The display device according to claim 1, wherein: The first region further includes a light-transmitting portion that does not overlap with the first pixel in the thickness direction, and the under-panel sensor overlaps with the light-transmitting portion in the thickness direction.

6. The display device according to claim 5, wherein: The under-panel sensor includes an image sensor as a camera device, the image sensor receiving light provided through the light-transmitting portion.

7. The display device according to claim 1, wherein: The anti-reflection layer further includes a first color filter overlapping the first pixel in the thickness direction and a second color filter overlapping the second pixel in the thickness direction, and The first color filter is disposed in the opening of the first light shielding layer, and the second color filter is disposed in the opening of the second light shielding layer.

8. The display device according to claim 7, wherein: The first pixel comprises: A first sub-pixel, emitting light of a first color; a second sub-pixel that emits light of a second color; and a third sub-pixel emitting light of a third color, and The first color filter comprises: a first sub-color filter, overlapping the first sub-pixel in the thickness direction; a second sub-color filter overlapping the second sub-pixel in the thickness direction; and The third sub-color filter overlaps the third sub-pixel in the thickness direction.

9. The display device according to claim 7, wherein: The width of the first light shielding layer in the predetermined direction is greater than the width of the second light shielding layer in the predetermined direction.

10. The display device according to claim 1, wherein: The number of the first pixels per unit area is smaller than the number of the second pixels per unit area.

11. The display device according to claim 1, wherein: The size of the first area is smaller than the size of the second area.

12. The display device according to claim 1, wherein: The width of the first pixel defining layer in the predetermined direction is equal to the width of the second pixel defining layer in the predetermined direction.

13. The display device according to claim 12, wherein: The thickness of the second pixel defining layer is greater than the thickness of the first pixel defining layer.

14. A display device comprising: The display panel comprises a first area and a second area, wherein first pixels are defined in the first area and second pixels are defined in the second area; The display panel comprises: a light emitting element layer, comprising a pixel defining layer defining a light emitting region of the first pixel and defining a light emitting region of the second pixel; A thin film encapsulation layer, covering the light emitting element layer; A sensing layer is disposed on the thin film encapsulation layer and comprises: Sensing electrodes; a first insulating layer; a second insulating layer, disposed on the first insulating layer; and a planarization layer disposed between the first insulating layer and the second insulating layer; and The anti-reflection layer is disposed on the sensing layer and includes a light shielding layer, wherein the light shielding layer is parallel to the image sensor layer in the thickness direction of the display panel. Pixel-limited layer overlap; and a sensor under the panel, overlapping the first area in the thickness direction; in, The width of the light shielding layer in a predetermined direction is smaller than the width of the pixel defining layer in the predetermined direction, and A thickness of the thin film encapsulation layer of the first pixel is smaller than a thickness of the thin film encapsulation layer of the second pixel.

15. The display device according to claim 14, wherein: The sensing layer further comprises: A first conductive layer, disposed on the second insulating layer; a second conductive layer, disposed on the first conductive layer; and a contact layer disposed between the first conductive layer and the second conductive layer, and The second conductive layer is electrically connected to the first conductive layer through a contact hole passing through the contact layer.

16. The display device according to claim 15, wherein: The contact layer does not overlap the under-panel sensor in the thickness direction.

17. The display device according to claim 15, wherein: The contact layer and the planarization layer include the same material.

18. The display device according to claim 17, wherein: The contact layer overlaps the under-panel sensor in the thickness direction.

19. The display device according to claim 18, wherein: The sensing layer further includes a protection layer, the protection layer being disposed between the second conductive layer and the anti-reflection layer, and The protection layer includes the same material as the same material of the contact layer and the planarization layer.

20. The display device according to claim 14, wherein: A thickness of the planarization layer in the first region is greater than a thickness of the planarization layer in the second region.

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