Methods and apparatuses including semiconductor devices and test equipment

Abstract

A method of testing a semiconductor device. An apparatus comprising a semiconductor device and a testing apparatus. The semiconductor device comprises an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements comprising transmitting elements and receiving elements. The testing apparatus comprises a surface placed against the surface of the device. The testing apparatus further comprises at least one waveguide extending through the testing apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the device to one of the receiving elements of the device. Each waveguide comprises a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element of the plurality of radiating elements located at the surface of the device. A spacing between the waveguide openings of each waveguide is greater than or less than a spacing between the corresponding radiating elements.

Description

Background Technology

[0001] This specification relates to a method for testing a semiconductor device, and to an apparatus including a semiconductor device and a testing device.

[0002] Today's radio frequency (RF) transceiver integrated circuits (ICs) with integrated radiating elements such as antennas or transmitters need to be tested in production. This testing may include testing of the internal die and the antenna / transmitter itself, as well as testing of package characteristics that affect the performance of the antenna / transmitter (such as the "artificial dielectric" required to achieve the desired directional characteristics of the antenna / transmitter).

[0003] Typically, this test can only be performed via an external loopback path from the transmitter antenna / transmitter to the receiver antenna / transmitter. The stringent specifications for IC transmit power, transmit and receive antenna / transmitter gain, and receiver noise figure require this loopback path to be extremely accurate, despite the challenging environmental conditions at production test sites.

[0004] In advanced radar transceiver ICs, a recent development is the integration of both the transmit and receive antennas into a single package (Antenna-in-Package, AiP). Another technique integrates the transmitter into the package—these transmitters are connected to an external antenna within the package via waveguides. For such ICs, RF transmitter output power and receiver noise figure are critical parameters, but measuring them is very difficult because the results are highly dependent on many conditions, such as:

[0005] • Directional characteristics of integrated antennas;

[0006] • Impedance matching between integrated antennas and on-chip active devices (e.g., low-noise amplifiers (LNAs), power amplifiers (PAs));

[0007] • Dielectric properties (e.g., δk and tan8) of the laminated materials used to achieve radiation directivity in integrated antennas;

[0008] • The x / y and z displacements of the integrated antenna relative to the reference antenna used for measurement; and

[0009] • Measure the contact pressure of the antenna on the IC package.

[0010] If the RF signal from the IC's transmitting antenna is fed to the IC's receiving antenna via an external loopback path, allowing the IC to measure the amplitude and phase of the received signal, these dependencies can be mitigated.

[0011] The loopback path can be implemented using waveguides. Waveguide parameters, such as wall thickness, surface roughness, and alignment accuracy with the integrated antenna, significantly affect the measurement. Therefore, a standardized loopback device is desired for all situations requiring precise measurement of RF parameters, including, for example:

[0012] • Verification at the IC manufacturer;

[0013] • Verification from the OEM manufacturer;

[0014] • Production testing by IC manufacturers;

[0015] • OEM customers refused to provide analysis;

[0016] • The IC manufacturer's customers refused to provide analysis;

[0017] • Qualification at the customer's site (e.g., life testing); and

[0018] • On-site, specifically in the car workshop, the new external antenna is being adjusted.

[0019] There is currently no standardized solution for a loopback device that combines high precision and high sensitivity with antenna or transmitter misalignment in different locations, but combines low sensitivity with the misalignment of the loopback device. Summary of the Invention

[0020] The various aspects of this disclosure are set forth in the appended independent and dependent claims. Combinations of features from the dependent claims may be suitably combined with features of the independent claims, and not merely as expressly set forth in the claims.

[0021] According to an aspect of this disclosure, an apparatus is provided, the apparatus comprising:

[0022] A semiconductor device, comprising an integrated circuit and a plurality of external radiating elements located on the surface of the device, the radiating elements comprising at least one transmitting element and at least one receiving element; and

[0023] Test equipment for testing the semiconductor device, the test equipment comprising:

[0024] Surface, for placement against the surface of the device; and

[0025] At least one waveguide, wherein each waveguide extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the apparatus to one of the receiving elements of the apparatus, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the apparatus.

[0026] The spacing between the waveguide openings of each waveguide in the test device is greater than or less than the spacing between the corresponding radiating elements of the device.

[0027] According to another aspect of this disclosure, a method for testing a semiconductor device is provided, the method comprising:

[0028] A semiconductor device is provided, the semiconductor device including an integrated circuit and a plurality of external radiating elements located on the surface of the device, the radiating elements including at least one transmitting element and at least one receiving element;

[0029] Provide a test apparatus for testing the semiconductor device, the test apparatus comprising:

[0030] Surface, for placement against the surface of the device; and

[0031] At least one waveguide, wherein each waveguide extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the apparatus to one of the receiving elements of the apparatus, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the apparatus.

[0032] The spacing between the waveguide openings of each waveguide in the test device is greater than or less than the spacing between the corresponding radiating elements of the device; and

[0033] Electromagnetic radiation is transmitted from at least one of the transmitting elements to at least one of the receiving elements via at least one waveguide of the test equipment.

[0034] By including an intentional non-zero pitch mismatch between the waveguide opening of each waveguide in the test equipment and the corresponding radiating element of the device, the sensitivity to further unintentional mismatches between the waveguide opening and the radiating element (e.g., due to manufacturing variations or other reasons) can be reduced.

[0035] The radiating elements of a semiconductor device may include, for example, an antenna and / or a transmitter. Therefore, the transmitting element may include, for example, a transmitting antenna or a transmitting transmitter, while the receiving element may include, for example, a receiving antenna or a receiving transmitter.

[0036] The spacing between waveguide openings in each waveguide of the test equipment can be at least 0.1% larger or smaller than the spacing between the corresponding radiating elements of the device. The spacing between waveguide openings in each waveguide of the test equipment can be at least 1% larger or smaller than the spacing between the corresponding radiating elements of the device.

[0037] In some embodiments, the spacing between waveguide openings in each waveguide of the test apparatus may be smaller than the spacing between corresponding radiating elements of the apparatus. In other embodiments, the spacing between waveguide openings in each waveguide of the test apparatus may be larger than the spacing between corresponding radiating elements of the apparatus.

[0038] At least one of the waveguides can be configured to route electromagnetic radiation transmitted by one of the transmitting elements of the device to multiple receiving elements of the device. Given that the transmitting power of the transmitting element may exceed the power that a single receiving element can receive, this allows multiple receiving elements to be used together to test the transmitting element (and vice versa).

[0039] The waveguide of this device can have:

[0040] The first branch is used to transmit electromagnetic radiation emitted by the transmitting element; and

[0041] At least two additional branches, coupled to the first branch, are used to route the electromagnetic radiation to the plurality of receiving elements.

[0042] A semiconductor device may include a semiconductor die located within a package. The surface of the device where multiple external radiating elements are located may be the outer surface of the package.

[0043] Semiconductor devices may include:

[0044] The semiconductor die located in the package; and

[0045] Carrier, wherein the package is mounted on the carrier,

[0046] The surface of the device on which the plurality of external radiating elements are located is the surface of the carrier. Attached Figure Description

[0047] Embodiments of this disclosure will now be described by way of example only with reference to the accompanying drawings, in which the same reference numerals refer to the same elements, wherein:

[0048] Figure 1A A semiconductor device using a stripline antenna is shown;

[0049] Figure 1B A semiconductor device using an external emitter is shown;

[0050] Figure 1C A semiconductor device using an integrated emitter is shown;

[0051] Figure 2A , Figure 2B and Figure 2C A semiconductor device, dielectric layer, and plunger according to an embodiment of the present disclosure are shown;

[0052] Figure 3 A semiconductor device and a dielectric layer according to an embodiment of the present disclosure are shown;

[0053] Figure 4 A semiconductor device and plunger according to an embodiment of the present disclosure are shown;

[0054] Figure 5A and Figure 5B A semiconductor device, dielectric layer, and plunger according to an embodiment of the present disclosure are shown;

[0055] Figure 6A and Figure 6B A semiconductor device, dielectric layer, and plunger according to an embodiment of the present disclosure are shown;

[0056] Figure 7 A semiconductor device and plunger according to an embodiment of the present disclosure are shown;

[0057] Figure 8 A semiconductor device and a test apparatus according to embodiments of the present disclosure are shown;

[0058] Figure 9 This illustrates the effect of the mismatch between the lateral position of the radiating element of the semiconductor device and the waveguide opening in the test equipment; and

[0059] Figures 10 to 12 Each illustration shows the effect of a mismatch between the lateral position of the radiating element of a semiconductor device and the waveguide opening in a test apparatus according to an embodiment of the present disclosure. Detailed Implementation

[0060] Embodiments of this disclosure are described below with reference to the accompanying drawings.

[0061] Figure 1A , Figure 1B and Figure 1C Examples of semiconductor devices 10 are shown respectively.

[0062] Figure 1A The device 10 includes a semiconductor die 6 forming an integrated circuit, which typically includes circuitry for transmitting / receiving and processing millimeter-wave signals, for example, used in the automotive industry. The semiconductor die 6 may be encapsulated in a sealant 4. In this example, the semiconductor die 6 is mounted on the surface of a carrier 2, such as a printed circuit board. The carrier 2 may include, for example, RO3003 or RF4 materials. The electrical connection 8 between the carrier and the semiconductor die 6 can be, for example, [missing information - likely a specific material]. Figures 1A to 1C The array of solder balls shown is used to form the connection, although other types of connections known in the art can also be used.

[0063] Figure 1A , Figure 1B and Figure 1C Each of the semiconductor devices 10 includes a plurality of radiating elements located on the surface of the device 10. Figure 1A and Figure 1B In this example, the radiating element is provided in the form of stripline antennas 12 and 14, which include metal strips located on the surface of the carrier 2. The radiating element includes a plurality of transmitting elements 12 and a plurality of receiving elements 14. The electrical connection 16 between the radiating element and the semiconductor die 6 can be formed by a combination of metal traces located on the surface of the carrier 2 and the aforementioned electrical connection 8.

[0064] Figure 1B The semiconductor device 10 shown is similar to Figure 1A The illustrated semiconductor device, in addition to device 10, includes a waveguide antenna 20 that can be located on top of the semiconductor die 6 and carrier 2. The waveguide antenna 20 includes channels 18 for directing electromagnetic radiation to / from a plurality of receiving elements 14 and a plurality of transmitting elements 12. These channels can be terminated in the transmitting element array 22 and the receiving element array 24. Figure 1B In this example, the transmitting element 22 and the receiving element 24 form the radiating element of the semiconductor device 10. Figure 1B The arrangement of the stripline antenna and radiating elements in the example can be referred to as an external transmitter.

[0065] Figure 1C The semiconductor device 10 shown is similar to Figure 1C The semiconductor device shown, except Figure 1C The device 10 in the middle does not include the above-mentioned Figure 1A and Figure 1B In addition to the aforementioned stripline antenna. Conversely. Figure 1C The device 10 includes a transmitting element 32 for transmitting millimeter-wave signals and a receiving element 34 for transmitting millimeter-wave signals disposed within a sealant 4. An electrical connection 36 between the semiconductor die 6 and the transmitting element 32 and the receiving element 34 can pass through the sealant (and / or via an electrical connection 8). Similar to... Figure 1B Semiconductor device 10, Figure 1C The semiconductor device 10 includes a waveguide antenna 20, which may be located on top of the semiconductor die 6 and the carrier 2. The waveguide antenna 20 includes channels 38 for directing electromagnetic radiation to / from the receiving element 34 and the transmitting element 32. Similarly, these channels may terminate in the transmitting element array 22 and the receiving element array 24. Figure 1C In this example, the transmitting element 22 and the receiving element 24 also form the radiating element of the semiconductor device 10. Figure 1C In the example, the arrangement of transmitting element 32, receiving element 34, and radiating elements 22 and 24 can be referred to as an integrated transmitter.

[0066] exist Figure 1A In this context, the sealant 4 can be considered as forming the package of the semiconductor die 6. Figure 1B and Figure 1C In this context, the sealant 4 and / or the waveguide antenna 20 can be considered as forming a package for the semiconductor die 6.

[0067] As mentioned earlier, in order to test Figures 1A to 1C The semiconductor device 10 of the type shown requires testing the operation of its radiating element. This testing may involve placing a plunger against the surface of the semiconductor device 10, the plunger having waveguide openings for electromagnetic coupling to the radiating element of the device 10. The plunger may include a loopback path, allowing the receiving element of the device 10 to receive electromagnetic radiation (millimeter-wave signals) transmitted by the transmitting element of the device 10. Currently, there is no standardized solution for a loopback path device that combines high precision and high sensitivity with radiating element misalignment in different locations, but also combines low sensitivity with the misalignment of the loopback path device.

[0068] Now we will combine Figures 2A to 12 A test apparatus according to an embodiment of the present disclosure is described.

[0069] Figure 2A The above information was shared. Figures 1A to 1C A semiconductor device 10 of a certain type. Device 10 includes a semiconductor die 6 that can be disposed within a sealant 30. Device 10 also includes a waveguide antenna 20, which includes a plurality of radiating elements arranged in an array, the array including transmitting elements 22 and receiving elements 24 disposed on the surface of device 10. The semiconductor die 6, sealant 30, and waveguide antenna 20 can be mounted on the surface of a carrier 20, as per [reference to...]. Figures 1B to 1C The explanation given.

[0070] The test equipment in this embodiment includes a dielectric portion 40 that may be included in the plunger. Figure 2B The dielectric portion 40 is shown, while the rest of the plunger is omitted (see below for reference). Figure 2C Further details describing the plunger). The dielectric portion 40 may be provided in the form of a layer. The dielectric portion 40 has a surface ( Figure 2BThe dielectric portion 40 shown (underside) can be positioned against the surface of the semiconductor device 10, which includes the radiating element of the device 10. The surface to be positioned against the surface of the semiconductor device 10, which includes the radiating element of the device 10, can be substantially planar, although it can generally also be shaped to match the contour of the surface of the semiconductor device 10. The dielectric portion 40 may also have a surface 42 (which is generally the surface of the dielectric portion 40 opposite to the surface to which it will be positioned against the semiconductor device 10). Additional features of the plunger (such as a plurality of waveguide openings of the plunger, which will be described below) can be positioned against the surface 42 of the dielectric portion 40.

[0071] Turn Figure 2C The plunger may also include a block 50, which may also accommodate a plurality of waveguide openings 60 and waveguides 52. The block may include metal (e.g., copper). The waveguide openings 60 are arranged in positions corresponding to the positions of the transmitting element 22 and the receiving element 24, thereby allowing the plurality of waveguide openings 60 to be electromagnetically coupled to corresponding transmitting / receiving elements among a plurality of radiating elements located on the surface of the device 10.

[0072] Waveguide 52 may include a channel extending from waveguide opening 60 into the plunger to route electromagnetic radiation transmitted by transmitting element 22 to receiving element 24 in the loop arrangement as previously explained. The waveguide may be filled with a dielectric. Each waveguide may extend between at least one of transmitting element 22 and at least one of receiving element 24. Figure 2C As shown, the waveguide opening 60 can gradually taper outward as it extends away from the waveguide 52 in order to provide better matching with the electromagnetic field in the dielectric portion 40.

[0073] The dielectric portion 40 is configured to provide a mating interface for electromagnetically coupling the plurality of waveguide openings 60 of the plunger to the plurality of radiating elements (transmitting element 22 and receiving element 24) of the semiconductor device 10. For this purpose, the material of the dielectric portion 40 can be selected based on the specific application and the electromagnetic wavelength used in testing the device 10. Suitable materials for the dielectric portion 40 include high-density polyethylene (HDPE) and polycarbonate, such as Makrolon or Peek, or ceramic materials. The thickness T of the dielectric portion 40 can also be selected (see [reference needed]). Figure 2BThis is to enhance the matching interface between the multiple waveguide openings 60 of the plunger and the multiple radiating elements (transmitting element 22 and receiving element 24) of the semiconductor device 10. Specifically, the thickness T of the dielectric portion 40 can be chosen to be λ / 2, where λ is the wavelength of the electromagnetic radiation to be used during testing of the semiconductor device 10 (i.e., transmitted by the transmitting element 22 and received by the receiving element 24). Note that λ represents the wavelength of the electromagnetic radiation within the dielectric portion 40. As an example only, in the case where the dielectric portion 40 comprises HDPE, and considering an example frequency of 77 GHz, the thickness T can be chosen to be approximately 2.7 mm. In another example, where the dielectric portion 40 comprises Makrolon, and again considering an example frequency of 77 GHz, the thickness T can be chosen to be approximately 2 mm.

[0074] The dielectric portion 40 can also be used to provide a seal to prevent unwanted airflow during testing of the semiconductor device 10 using test equipment. For example, by placing the dielectric portion 40 against the surface of the semiconductor device 10 including the radiating element, the dielectric portion 40 can seal the surface of the semiconductor device 10 including the radiating element. This prevents airflow around the radiating element of the device 10, which would otherwise affect the test results. It is also noted that the dielectric portion 40 can seal the waveguide opening 60 of the plunger, again preventing unwanted airflow.

[0075] although Figures 2A to 2C The embodiments are about such Figure 1B and Figure 1C The semiconductor device with waveguide antenna 20 shown is described, but it is conceivable that the plunger could also be used with... Figure 1A The semiconductor device 10 of the type shown is used together. In this case, the waveguide opening 60 of the plunger can be directly coupled to the stripline antennas 12, 14 on the surface of the carrier 2, which in this embodiment form the radiating elements of the device 10.

[0076] In some embodiments, the dielectric portion may include a curved surface for coupling electromagnetic radiation from the device 10 transmitted by the plurality of transmitting elements 22 to waveguide openings 60 of the plunger. Conversely, the curved surface may also allow electromagnetic radiation transmitted by one of the waveguide openings 60 to be coupled to the plurality of receiving elements 24 of the device. Figure 3 An example of this embodiment is shown. (With) Figure 2B Same, Figure 3The dielectric portion 40 is shown with the remainder of the plunger omitted to show the construction of the curved surface 44. The curved surface can be used as a lens antenna. In this embodiment, the curved surface 44 is concave when viewed from the waveguide(s) of the plunger(s). In other embodiments, the curved surface 44 may be convex when viewed from the waveguide(s) of the plunger(s). For example, the curved surface 44 may have a shape such as... Figure 3 The shown profile is essentially cylindrical; however, other surface profiles are also conceivable. The curvature of the curved surface 44 can be selected based on the dielectric constant of the material used to form the dielectric portion 40. The space created between the curved surface 44 and the waveguide opening 60 of the plunger can be filled with another dielectric, such as air.

[0077] In some embodiments, at least one of the waveguides of the plunger can be configured to route electromagnetic radiation transmitted by one of the transmitting elements 22 of the device 10 to a plurality of receiving elements 24 of the device 10. This will be discussed below in conjunction with... Figure 4 , Figure 5A and Figure 5B The embodiments describe examples of this situation.

[0078] Figure 4 A schematic illustration shows a plurality of waveguide openings 60 of a plunger coupled to a plurality of transmitting elements 22 (Tx1, Tx2, Tx3) and a plurality of receiving elements 24 (Rx1, Rx2, Rx3, Rx4) of a semiconductor device 10 according to an embodiment of the present disclosure. In this embodiment, waveguide 62 of the plunger routes electromagnetic radiation from transmitting element Tx1 to receiving element Rx4, while waveguide 66 routes electromagnetic radiation from transmitting element Tx2 to receiving element Rx3. Thus, waveguides 62 and 66 each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24. However, as Figure 4 As shown, in this embodiment, waveguide 64 routes electromagnetic radiation from transmitting element Tx3 to receiving elements Rx1 and Rx2. Considering that the transmitting power of transmitting element 22 may exceed the power that a single receiving element 24 can receive, this arrangement allows multiple receiving elements 24 to be used together in the apparatus 10 for testing transmitting element 22 (and vice versa).

[0079] To route electromagnetic radiation from the transmitting element 22 of device 10 to more than one receiving element 24 of device 10, the waveguide used (e.g., see...) Figure 4 The waveguide 64 in the diagram can include multiple branches. For example, in... Figure 4 middle, Figure 4The waveguide 64 includes a first branch 64A for transmitting electromagnetic radiation transmitted by the transmitting element Tx1, a second branch 64B for routing the electromagnetic radiation to the receiving element Rx1, and a third branch 64C for routing the electromagnetic radiation to the receiving element Rx2. In this embodiment, the first branch 64A of the waveguide 64 therefore splits into two separate branches 64B and 64C at position 65.

[0080] Figure 5A and Figure 5B It shows at least one of the above-mentioned... Figure 4 Example construction of a plunger for the type of branched waveguide. Figure 5A It is a 3D view, and Figure 5B This is a plan view taken from above the surface of the semiconductor device 10, which has radiating elements. The semiconductor device 10 itself is also... Figure 5A As shown in the image.

[0081] Figure 5A and Figure 5B The arrangement of waveguides 62, 64, and 66 in the middle is similar to Figure 4 The arrangement shown in the diagram includes waveguides 62 and 66 that each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24, and waveguide 64 including multiple branches for routing electromagnetic radiation from the transmitting element 22 of the device 10 to more than one receiving element 24 of the device 10. Figure 5A and Figure 5B It also includes a cutout 70 in block 50, which can receive a plunger nozzle for moving the plunger into place during the testing process. Figure 5A and Figure 5B As shown, waveguides 62, 64, and 66 can be shaped around the cutout 70. For example, branches of waveguide 64 split on one side of the cutout, and branches leading to the receiving element 24 of device 10 can extend through the plunger on the opposite side of the cutout 70.

[0082] Figure 6A and Figure 6B It shows at least one of the above-mentioned... Figure 4 Example construction of a plunger for the type of branched waveguide. Figure 6A It is a cross-sectional view, and Figure 6B This is a plan view of the semiconductor device 10 with radiating elements, viewed from above. The semiconductor device 10 itself is also... Figure 6A As shown in the image.

[0083] Figure 6A and Figure 6B The arrangement of waveguides 62, 64, and 66 in the middle is also similar. Figure 4The arrangement shown in the diagram includes waveguides 62 and 66 that each route electromagnetic radiation between a single transmitting element 22 and a single receiving element 24, and waveguide 64 including multiple branches for routing electromagnetic radiation from the transmitting element 22 of the device 10 to more than one receiving element 24 of the device 10.

[0084] In this embodiment, a printed circuit board (PCB) 100 located on the plunger is used to route the waveguide. The PCB 100 includes patterned metallic features 102 that are shaped and configured to route electromagnetic radiation within the waveguide. It is conceivable that this document relates to... Figure 6A and Figure 6B The PCB 100 of the described type can also be used to implement routing in a plunger that does not include branch waveguides such as waveguide 64, but in which each waveguide routes electromagnetic radiation from a single transmitting element 22 of device 10 to a single receiving element 24.

[0085] In some embodiments, one or more of the waveguides may be provided with attenuation portions for attenuating electromagnetic radiation transmitted by one or more transmitting elements 22 of the semiconductor device 10 and then returning it to one or more receiving elements 24 of the device 10. Figure 7 Such an example is shown in the embodiments. For example... Figure 7 As shown, the attenuation section 90 may be located inside the waveguide 68. Suitable materials for the attenuation section include absorbing foams, such as those available from ECOSORB. Considering that the transmit power of one or more transmitting elements 22 may exceed the power that a single receiving element 24 can receive, the attenuation section 90 may allow the receiving element 24 of the semiconductor device 10 to receive electromagnetic radiation from one (or more) transmitting elements 22 of the semiconductor device 10.

[0086] In standard methods for measuring the RF parameters of millimeter-wave devices, the RF parameters of millimeter-wave integrated circuits are measured directly at customer verification sites and in field repair shops during verification and production testing. This typically requires millimeter-wave test laboratory equipment, standardized measurement antennas, and several measurement parameters to be standardized. Despite the effort and cost of such measurements, the results are often too inaccurate and not sufficiently repeatable or reproducible. Therefore, this process is unsuitable for performing accurate millimeter-wave radar measurements in varying environments where the measuring equipment and several other parameters are variable and difficult to standardize.

[0087] As explained earlier, testing of millimeter-wave devices can be performed by forming a loopback path, in which electromagnetic radiation emitted by the transmitting element of the device can loop back to the receiving element of the device. Such testing may involve the following steps.

[0088] First, RF parameters on several integrated circuits can be directly measured in a millimeter-wave RF laboratory. Then, external devices containing loopback paths can be used to determine the RF parameters of these integrated circuits. The RF laboratory can correlate the RF parameters measured by laboratory equipment with the RF loopback parameters measured by the loopback method. The RF loopback parameters measured under standardized conditions can then be used as a reference.

[0089] Therefore, this approach guarantees customers parameters measured using a standardized loopback device through loopback testing, not parameters measured in a millimeter-wave RF laboratory. In other words, it guarantees the received power and received noise level measured by the integrated circuit when using the loopback device. What cannot be guaranteed is the transmitter output power or receiver noise figure.

[0090] The loopback device can then be used in all situations where RF parameters are required, such as in validation, production testing, customer rejection testing, and testing at customer sites and in auto repair shops.

[0091] Figure 8 A test apparatus for testing a semiconductor device of the type described herein using a loopback method is schematically illustrated. The apparatus includes a test device 100, which may include a waveguide with a waveguide opening 60 for looping back electromagnetic radiation emitted by the transmitting element 22 of the device 10 under test to the receiving element 24 of the device 10. For simplicity, Figure 8 The illustrated device 10 includes a single transmitting element 22 and a single receiving element, while the test equipment includes two corresponding waveguide openings 60 and a single unbranched waveguide. However, it will be understood that the principles described below also apply to device 10, which includes more than one transmitting element 22 and / or receiving element 24, and are applicable to test equipment including corresponding waveguide openings 60, as well as those including, as per [reference to...] Figure 4 and Figures 5A to 5B The test equipment for the branched waveguide explained.

[0092] Figure 8 A potential problem with the type of test setup shown is that misalignment between the waveguide opening 60 of the test device 100 and the radiating elements 22, 24 of the device 10 under test may lead to inaccurate test results. Figure 8 In this context, the lateral misalignment between the transmitting element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 is represented as Δx. tx The misalignment between the receiving element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 is represented as Δx. rx .

[0093] Figure 9 The effects of the aforementioned misalignment are illustrated. Figure 9The vertical axis represents the coupling factor (in dB) between the transmitting element 22 of device 10 and the corresponding waveguide opening 60 of test equipment 100 (left curve) and the coupling factor between the receiving element 24 of device 10 and the corresponding waveguide opening 60 of test equipment 100 (right curve). The coupling factor is shown as misalignment Δx. tx (Left curve) and misaligned Δx rx (The function of the curve on the right). Note that for each radiating element 22, 24, it is assumed that when Δx tx and Δx rx When the value is zero, that is, when each radiating element 22, 24 and its corresponding waveguide opening 60 are positioned directly opposite each other without any lateral misalignment (by... Figure 9 When Tx1 and Rx1 in the diagram represent (i.e., when peak coupling factors occur), a peak coupling factor appears. Figure 9 As can be seen from the curve, the coupling factor changes with the positive or negative misalignment Δx. tx Δx rx It decreases as it increases.

[0094] It is understandable that, assuming the fixed lateral spacing between the transmitting element 22 and the receiving element 24 is equal to the fixed lateral distance between the corresponding waveguide openings 60 of the test equipment 100, then lateral misalignment between the transmitting element 22 and its corresponding waveguide opening 60 of the test equipment 100 will lead to corresponding lateral misalignment between the receiving element 24 and its corresponding waveguide opening 60 of the test equipment 100. In other words, in Figure 9 In, Δx tx =Δx rx .

[0095] Figure 9 Tx2 and Rx2 correspond to small misalignments, while Tx3 and Rx3 correspond to larger misalignments. Due to the small misalignment of the radiating element / waveguide opening, and Tx1, Rx1(Δx... tx =Δx rx Compared to Tx2 and Rx2, the coupling factor of each radiating element / waveguide opening pair at Tx3 and Rx3 is reduced, and due to the large misalignment of the radiating element / waveguide openings, the coupling factor of each radiating element / waveguide opening pair at Tx3 and Rx2 is further reduced compared to Tx2 and Rx2.

[0096] According to embodiments of this disclosure, it is intentional that the lateral spacing between the waveguide openings 60 of the test device 100 is greater than or less than the lateral spacing between the corresponding transmitting element 22 and receiving element 24 of the device 10. As will now be discussed regarding... Figure 10 As explained, this automatically (and counterintuitively) leads to misalignment between the transmitting element 22 and receiving element 24 of the device 10 under test and the corresponding waveguide opening 60 of the test equipment 100.

[0097] Similar to Figure 9 , Figure 10 The coupling factor (left curve) between the transmitting element 22 of the device 10 under test and its corresponding waveguide opening 60 of the test equipment 100, and the coupling factor (right curve) between the receiving element 24 of the device 10 under test and its corresponding waveguide opening 60 of the test equipment 100, are shown. In this embodiment, the lateral spacing between the waveguide openings 60 of the test equipment 100 is intentionally smaller than the lateral spacing between the transmitting element 22 and the receiving element 24. When the test equipment 100 moves to its measurement position, there will always be at least some misalignment between the transmitting element 22 and its corresponding waveguide opening 60 and / or between the receiving element 24 and its corresponding waveguide opening 60.

[0098] exist Figure 10 The diagram shows three example locations of the test device 100: Tx1, Rx1; Tx2, Rx2; and Tx3, Rx3.

[0099] Note that positions Tx2 and Rx2 cause equal amounts of misalignment (albeit in opposite directions) between the transmitting element 22 and its corresponding waveguide opening 60 of the test device 100, and between the receiving element 24 and its corresponding waveguide opening 60. That is, for positions Tx2 and Rx2, (Δx tx =-Δx rx ).

[0100] At positions Tx1 and Rx1, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 decreases relative to positions Tx2 and Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 increases. Similarly, at positions Tx3 and Rx3, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 increases relative to positions Tx2 and Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 decreases. Therefore, it can be understood that there is a tendency for the decrease in the total coupling factor due to the misalignment relative to positions Tx2 and Rx2 to be offset (considering that the loopback test arrangement requires the electromagnetic radiation passing through the waveguide of the test equipment 100 to couple twice between the device 10 and the test equipment 100: once at the transmitting element 22 and once at the receiving element 24). Therefore, the intentional reduction in the lateral spacing between the waveguide openings 60 of the aforementioned test apparatus 100 has resulted in an overall decrease in the sensitivity of the coupling factor to misalignment (relative to positions Tx2, Rx2) between the waveguide openings 60 of the test apparatus 100 and the waveguide openings of the device 10 under test. For a first-order approximation, the total coupling factor Tx1+Rx1≈Tx2+Rx2≈Tx3+Rx3. Using a test apparatus 100 with a loopback waveguide arrangement can improve the accuracy and repeatability of tests on semiconductor devices 10 of the type described herein.

[0101] For example, refer to Figure 11 Understandable, although Figure 10 In one embodiment, the lateral spacing between the waveguide openings 60 is smaller than the lateral spacing between the transmitting element 22 and the receiving element 24, but similar benefits can be achieved when the lateral spacing between the waveguide openings 60 is larger than the lateral spacing between the transmitting element 22 and the receiving element 24. Figure 11 The image shows three example locations of the test device 100 again, although this time it is for a test device 100 where the lateral spacing between the waveguide openings 60 is greater than the lateral spacing between the transmitting element 22 and the receiving element 24. The three example locations are: Tx1, Rx1; Tx2, Rx2; and Tx3, Rx3.

[0102] Similarly, positions Tx2 and Rx2 cause equal amounts of misalignment (albeit in opposite directions) between the transmitting element 22 and its corresponding waveguide opening 60 of the test device 100, and between the receiving element 24 and its corresponding waveguide opening 60. That is, for positions Tx2 and Rx2, (-Δx tx =Δx rx ).

[0103] exist Figure 11In the above scenario, at positions Tx1 and Rx1, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 decreases again relative to positions Tx2 and Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 increases again. Similarly, at positions Tx3 and Rx3, the misalignment between the transmitting element 22 and its corresponding waveguide opening 60 increases again relative to positions Tx2 and Rx2, while the misalignment between the receiving element 24 and its corresponding waveguide opening 60 decreases again. Therefore, it can also be understood that the reduction in the total coupling factor due to the misalignment relative to positions Tx2 and Rx2 tends to offset each other. Thus, the intentional increase in the lateral spacing between the waveguide openings 60 of the test device 100 has resulted in an overall decrease in the sensitivity of the coupling factor to the misalignment (relative to positions Tx2 and Rx2) between the waveguide openings 60 of the test device 100 and the waveguide openings of the device 10 under test. Furthermore, for the first-order approximation, the total coupling factor Tx1 + Rx1 ≈ Tx2 + Rx2 ≈ Tx3 + Rx3. Figure 10 As in the embodiments described herein, a test apparatus 100 with a loopback waveguide arrangement is used, which can therefore improve the accuracy and repeatability of tests on semiconductor devices 10 of the type described herein.

[0104] The lateral spacing between the waveguide openings 60 of the test device 100 can differ from (i.e., be greater than or less than) the lateral spacing between the transmitting element 22 and the receiving element 24 by an amount that can be selected, for example, based on the shape of the coupling factor curve (e.g., slope, width, etc.). It is generally conceivable that the spacing between the waveguide openings 60 of the test device 100 can be at least 0.1% larger or at least 1% smaller than the spacing between the corresponding transmitting element 22 and receiving element 24 of the device 10.

[0105] According to embodiments of this disclosure, intentionally smaller or larger lateral spacing between waveguide openings can be used in any test apparatus having:

[0106] Test equipment for testing the semiconductor device, the test equipment comprising:

[0107] Surface, for placement against the surface of the device; and

[0108] At least one waveguide, wherein each waveguide extends through the test device for routing electromagnetic radiation transmitted by one of the transmitting elements of the device to one of the receiving elements of the device, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the device.

[0109] For example, the testing equipment may include the above-mentioned... Figures 1A to 7Any of the types of test equipment described herein, although it is conceivable that the dielectric portion 40 previously described may or may not be present in these embodiments.

[0110] The semiconductor device under test may include an integrated circuit and multiple external radiating elements located on the surface of the device, each external radiating element including at least one transmitting element and at least one receiving element. As an example, the device under test may be as described above. Figures 1A to 7 Device 10 of any of the types described in the text.

[0111] For example, regarding Figures 1A to 1C The described testing of a semiconductor device 10, including an antenna in a package (AiP) or a transmitter in a package (LiP), typically does not simply involve testing the radiating elements of the device 10. The testing may also involve testing any internal antennas of the device 10 (e.g., Figure 1B The stripline antennas 12, 14 or shown Figure 1C The transmitting element 32 and receiving element 34 shown are tested. The test may also involve the so-called "artificial dielectric," which is a structure that ensures that the transmitting and receiving elements have the expected directional characteristics.

[0112] Temperature cycling, aging, and / or manufacturing variations / defects can cause defects to manifest in different ways. In some cases, the position of one of the transmitting or receiving elements of device 10 may be moved to a position different from that intended during manufacturing. More frequently, the geometric antenna position may remain the same, but the apparent antenna position (i.e., the effective position according to antenna directivity) may change. This can cause the RF characteristics (e.g., gain, directivity) of the device's antenna to change as if the antenna position had changed, even if the actual antenna position may remain the same. These effects should be considered during loopback testing. While it is desirable that these measurements be insensitive to misalignment of the test equipment, they should also be sensitive to any changes (actual or apparent) to the antenna itself.

[0113] Figure 12 The coupling factor between the transmitting element 22 of the device 10 under test and the waveguide opening 60 in its corresponding test equipment 100 is shown, as well as the coupling factor between the receiving element 24 of the device 10 and the waveguide opening 60 in its corresponding test equipment 100. Figure 12 In this context, it is assumed that the lateral spacing between the waveguide openings 60 in the test equipment 100 is less than the lateral spacing between the transmitting element 22 and the receiving element 24, as mentioned above. Figure 10 As stated above.

[0114] exist Figure 12 In this context, positions Tx and Rx2 are considered "nominal" positions, and correspond to... Figure 10 The positions in the middle are Tx2 and Rx2. Figure 12 Two example deviations from Tx, Rx2 are also shown, namely Tx, Rx1 and Tx, Rx3. Tx, Rx1 and Tx, Rx3 each correspond to changes in the lateral spacing (actual or apparent) between the transmitting element 22 and the receiving element 24 of the semiconductor device 10. In particular, in the case of Tx, Rx1, the lateral spacing between the transmitting element 22 and the receiving element 24 increases, while in the case of Tx, Rx3, the lateral spacing between the transmitting element 22 and the receiving element 24 decreases.

[0115] It can be seen that, compared to Tx2 and Rx2, a slight increase in distance (Tx, Rx3) results in poorer coupling at receiver element 24. Similarly, a slight decrease in distance (Tx, Rx1) results in better coupling at receiver element 24. Therefore, compared to the standard case Tx+Rx2, the changes in total loopback transmission factors Tx+Rx1 and Tx+Rx3 are large in this example (Tx+Rx1 >> Tx+Rx2; Tx+Rx3 << Tx+Rx2). Therefore, it can be understood that although the lateral spacing between waveguide openings of test device 100 is intentionally different from the "nominal" spacing represented by Tx and Rx2, the test process is generally highly sensitive to changes in the lateral spacing in the radiating elements of the device 10 under test. Although it has been assumed that the lateral spacing of waveguide openings 60 is intentionally smaller than the lateral spacing between transmitting element 22 and receiving element 24 of the device 10 under test (according to... Figure 10 Explained in the case of ) Figure 12 However, it is understandable that, for the lateral spacing of the waveguide opening 60, the testing process is generally more sensitive to changes in the lateral spacing of the radiating elements in the device 10 under test. The lateral spacing of the waveguide opening 60 is intentionally larger than the lateral spacing between the transmitting element 22 and the receiving element 24 of the device 10 under test (according to...). Figure 11 ).

[0116] Therefore, a method for testing a semiconductor device has been described. An apparatus comprising a semiconductor device and a test apparatus. The semiconductor device includes an integrated circuit and a plurality of external radiating elements at a surface of the device, the radiating elements including transmitting elements and receiving elements. The test apparatus includes a surface for placement against the surface of the device. The test apparatus further includes at least one waveguide extending through the test apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the device to one of the receiving elements of the device. Each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located on the surface of the device. The spacing between the waveguide openings of each waveguide is greater than or less than the spacing between the corresponding radiating elements.

[0117] Although specific embodiments of this disclosure have been described, it should be understood that many modifications / additions and / or substitutions may be made within the scope of the claims.

Claims

1. A device, characterized in that, include: A semiconductor device, the semiconductor device including an integrated circuit and a plurality of external radiating elements located on the surface of the device, the radiating elements including at least one transmitting element and at least one receiving element; as well as Test equipment for testing the semiconductor device, the test equipment comprising: Surface, for placement against the surface of the device; and At least one waveguide, wherein each waveguide extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the apparatus to one of the receiving elements of the apparatus, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the apparatus. The spacing between the waveguide openings of each waveguide in the test device is greater than or less than the spacing between the corresponding radiating elements of the device; At least one of the waveguides is configured to route electromagnetic radiation transmitted by one of the transmitting elements of the device to a plurality of receiving elements of the device; The waveguide includes: a first branch for transmitting electromagnetic radiation transmitted by the transmitting element; and at least two additional branches coupled to the first branch for routing the electromagnetic radiation to the plurality of receiving elements.

2. The device according to claim 1, characterized in that, The spacing between the waveguide openings of each waveguide in the test device is at least 0.1% larger or smaller than the spacing between the corresponding radiating elements of the device.

3. The device according to claim 2, characterized in that, The spacing between the waveguide openings of each waveguide in the test device is at least 1% larger or smaller than the spacing between the corresponding radiating elements of the device.

4. The device according to any one of the preceding claims, characterized in that, The spacing between the waveguide openings of each waveguide in the test device is smaller than the spacing between the corresponding radiating elements of the device.

5. The device according to any one of claims 1 to 3, characterized in that, The spacing between the waveguide openings of each waveguide in the test device is greater than the spacing between the corresponding radiating elements of the device.

6. The device according to any one of claims 1 to 3, characterized in that, The semiconductor device includes a semiconductor die located in a package, and the surface of the device where the plurality of external radiating elements are located is the outer surface of the package.

7. The device according to any one of claims 1 to 3, characterized in that, The semiconductor device includes: The semiconductor die located in the package; and Carrier, wherein the package is mounted on the carrier, The surface of the device on which the plurality of external radiating elements are located is the surface of the carrier.

8. A method for testing a semiconductor device, characterized in that, The method includes: A semiconductor device is provided, the semiconductor device including an integrated circuit and a plurality of external radiating elements located on the surface of the device, the radiating elements including at least one transmitting element and at least one receiving element; Provide a test apparatus for testing the semiconductor device, the test apparatus comprising: Surface, for placement against the surface of the device; and At least one waveguide, wherein each waveguide extends through the test apparatus for routing electromagnetic radiation transmitted by one of the transmitting elements of the apparatus to one of the receiving elements of the apparatus, wherein each waveguide includes a plurality of waveguide openings for electromagnetic coupling to a corresponding radiating element among the plurality of radiating elements located at the surface of the apparatus. The spacing between the waveguide openings of each waveguide in the test device is greater than or less than the spacing between the corresponding radiating elements of the device; and Electromagnetic radiation is transmitted from at least one of the transmitting elements to at least one of the receiving elements via at least one waveguide of the test equipment; At least one of the waveguides is configured to route electromagnetic radiation transmitted by one of the transmitting elements of the device to a plurality of receiving elements of the device; The waveguide includes: a first branch for transmitting electromagnetic radiation transmitted by the transmitting element; and at least two additional branches coupled to the first branch for routing the electromagnetic radiation to the plurality of receiving elements.

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