Method and apparatus for extracting device model parameters of integrated circuit devices

Abstract

The present application relates to a method for extracting device model parameters of an integrated circuit device, comprising: providing a test data set for the integrated circuit device; providing an extraction condition setting interface, the extraction condition setting interface comprising a plurality of extraction condition fields, wherein each extraction condition field corresponds to a test condition; receiving user input, the user input being used to set or select extraction condition variables for at least one of the plurality of extraction condition fields of the extraction condition setting interface; generating an extraction condition template based at least on the extraction condition variables set or selected by the user input, and using the extraction condition template to filter corresponding test data from the test data set to generate a custom test data set; and fitting the device model of the integrated circuit device using the custom test data set to generate device model parameters of the integrated circuit device.

Description

Technical Field

[0001] The present application relates to the technical field of integrated circuit computer-aided design, and more specifically, to a method and apparatus for extracting device model parameters of an integrated circuit device. Background Art

[0002] The continuous development of semiconductor and integrated circuit technology has made the importance of integrated circuit computer-aided design (CAD) or electronic design automation (EDA) platforms increasingly prominent. A basic function of the EDA platform is the parameter extraction of device models, that is, to extract the model parameters of semiconductor devices manufactured with a specific integrated circuit process based on some standard device models. After the model parameters are extracted, combined with the corresponding standard device model, the various operating characteristics of the semiconductor device can be mathematically described, so as to be used for device simulation in subsequent circuit design.

[0003] The BSIM model is a metal oxide field effect transistor (MOSFET) model developed by the University of California, Berkeley, which is suitable for digital and analog circuit design and simulation. In the actual parameter extraction operation, the test data of the MOSFET device (for example, IV curves and CV curves of MOSFETs of different sizes) can be processed by selecting various BSIM models corresponding to the actual MOSFET device (for example, BSIM4, BSIM-Bulk, BSIM-CMG, etc.), and the model parameters of the MOSFET device can be extracted.

[0004] However, in order to improve the accuracy of model parameters, model parameter extraction often requires processing a large amount of test data. Therefore, the model parameter extraction operation usually takes a lot of time and requires a lot of computing resources.

[0005] Therefore, it is necessary to provide an improved device model parameter extraction method and apparatus. Summary of the invention

[0006] An object of the present application is to provide a method and apparatus for extracting device model parameters for integrated circuit devices.

[0007] According to one aspect of the present application, a method for extracting device model parameters of an integrated circuit device is provided, comprising: providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; providing an extraction condition setting interface, the extraction condition setting interface comprising a plurality of extraction condition fields, wherein each extraction condition field corresponds to a test condition; receiving user input, the user input being used to set or select extraction condition variables for at least one of the plurality of extraction condition fields of the extraction condition setting interface; generating an extraction condition template based at least on the extraction condition variables set or selected by the user input, and using the extraction condition template to filter corresponding test data from the test data set to generate a custom test data set; and fitting the device model of the integrated circuit device with the custom test data set to generate device model parameters of the integrated circuit device.

[0008] In another aspect of the present application, a method for extracting device model parameters of an integrated circuit device is provided, comprising: providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; receiving user input, the user input being used to select an extraction condition template, the extraction condition template comprising a group of extraction condition variables; using the extraction condition template to filter from the test data set the test data obtained by testing under a group of test conditions that meet the group of extraction condition variables, to generate a custom test data set; and fitting the device model of the integrated circuit device using the custom test data set to generate device model parameters of the integrated circuit device.

[0009] The above is an overview of the present application, which may be simplified, summarized, and omitted in detail. Therefore, those skilled in the art should recognize that this section is only illustrative and is not intended to limit the scope of the present application in any way. This summary section is neither intended to determine the key features or essential features of the claimed subject matter, nor is it intended to be used as an auxiliary means to determine the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The above and other features of the present application will be more fully understood through the following description and the attached claims in conjunction with the accompanying drawings. It is understood that these drawings only depict several embodiments of the present application and should not be considered as limiting the scope of the present application. By using the accompanying drawings, the present application will be more clearly and detailed.

[0011] Figure 1 A schematic diagram showing four current-voltage curves (specifically output characteristic curves) according to an embodiment of the present application is shown;

[0012] Figure 2 An extraction condition setting interface according to an embodiment of the present application is shown;

[0013] Figure 3 A method 300 for extracting device model parameters of an integrated circuit device according to an embodiment of the present application is shown;

[0014] Figure 4 A method 400 for extracting device model parameters of an integrated circuit device according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0015] In the following detailed description, reference is made to the accompanying drawings which form a part thereof. In the drawings, similar symbols generally represent similar components unless the context indicates otherwise. The illustrative embodiments described in the detailed description, drawings, and claims are not intended to be limiting. Other embodiments may be employed and other changes may be made without departing from the spirit or scope of the subject matter of the present application. It is understood that various configurations, substitutions, combinations, and designs of various aspects of the present application generally described in this application and illustrated in the drawings may be made, all of which explicitly constitute a part of the present application.

[0016] The inventors of the present application have found that the parameter extraction process for the device model of the integrated circuit device is usually performed by each integrated circuit manufacturing company according to the integrated circuit process it can provide, because the actual performance of the integrated circuit device they provide depends on the corresponding integrated circuit process. However, operators of different companies may perform differentiated parameter extraction operations based on personal work experience and software usage habits, the company's parameter extraction requirements and other factors. In order to meet this differentiation in usage requirements, the device model parameter extraction software usually provides a considerable number of parameter extraction conditions for operators to select and set, which improves the flexibility of the parameter extraction process while making the setting operation too cumbersome, increasing the time for operation setting, and the reusability between different operations is poor, making it difficult to form a standardized parameter extraction condition setting suitable for specific operators or users.

[0017] In order to solve the above problems, the inventors of the present application have added a function of setting parameter extraction conditions that can be predefined in the device model parameter extraction software. Before the software performs the calculation process of model parameter extraction, the operator of the software can select or set various extraction conditions for parameter extraction, and can save a set of selected or set extraction conditions. In this way, after performing a parameter extraction calculation, if the operator wants to continue to use the same set of parameter extraction conditions, they can call the pre-saved extraction conditions before performing the next parameter extraction calculation process; or if different operators want to uniformly adopt a certain parameter extraction process, they only need to share a pre-saved set of parameter extraction conditions with each other. This makes the standardization and reusability of parameter extraction processing possible, and does not reduce the flexibility of condition setting. Operators can still adjust various conditions for parameter extraction according to personal needs.

[0018] It can be understood that the method for extracting device model parameters of an integrated circuit device according to an embodiment of the present application can be used for various integrated circuit devices and corresponding device models. In some embodiments, the integrated circuit device is a device selected from the following group: MOSFET transistor, SOI (silicon on insulator) transistor, FinFET (fin field effect transistor) transistor, BJT (bipolar) transistor, HBT (heterojunction) transistor, TFT (thin film transistor) transistor, MESFET (metal semiconductor contact field effect transistor) transistor, diode, resistor or inductor, etc.; the device model can be a device model selected from the following group: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM_HV, PSP, GP-BJT or RPI TFT. For example, for a MOSFET transistor, its corresponding device model can be BSIM3, BSIM4, BSIM6 or other known standard models or non-standard models. It can be understood that the above device models are only exemplary. In practical applications, the model corresponding to the integrated circuit device can be selected as needed.

[0019] MOSFET transistors are one of the most commonly used devices in integrated circuits, so in the following embodiments of this application, the integrated circuit device is MOSFET transistors as an example for description. However, those skilled in the art will appreciate that the application of this application is not limited thereto.

[0020] Table 1 shows some main parameters of a BSIM model BSIM 4.6.4 standard for describing the characteristics of MOSFET transistors. In the parameter extraction process, the values ​​of these parameters are calculated by processing the actual test data of the MOSFET transistors.

[0021] Table 1 Main parameters of BSIM 4.6.4 model

[0022]

[0023]

[0024] After selecting and determining the applicable device model, in order to extract the model parameters, it is also necessary to provide test data corresponding to the integrated circuit device, which is usually obtained by testing the integrated circuit device under different test conditions. In some embodiments, the test conditions can be different sizes of the integrated circuit device (for example, different channel lengths, channel widths), different voltage bias conditions (for example, the bias voltage Vbs between the body region and the source, different source and drain voltages Vds, etc.) or different temperature conditions. Different types of test conditions can be combined into a set of test conditions, which are used to describe the physical characteristics and test environment of the integrated circuit device under test, such as the channel length, width and body bias voltage of the device. It should be noted that the integrated circuit device described herein does not refer to a specific physical device, but refers to a general term for a class of devices prepared using the same integrated circuit process. For example, two integrated circuit devices prepared using the same process and differing only in channel width can be considered to be the same integrated circuit device.

[0025] Testing the integrated circuit device under each set of test conditions can generate corresponding test data, and these test data can include, for example, one or more of multiple types of data such as current-voltage curves, capacitance-voltage curves, or derived electrical parameters. In some embodiments, the test data can be a current-voltage curve, and accordingly, the test data set can include one or more current-voltage curves (current is, for example, drain current Id, gate current Ig, body current Ib, source current Is, etc.). In other words, the test data obtained by testing under multiple sets of test conditions can constitute a test data set. In the following embodiments, the test data is described as a current-voltage curve as an example, but those skilled in the art can understand that in some other embodiments, the test data can be changed or adjusted according to the test conditions and test requirements when the test is performed, and the present application is not limited thereto. For example, derived electrical parameters can include parameters such as Idin, saturated drain current Idsat, maximum transconductance maxGm, Vtlin, saturated threshold voltage Vtsat, Vtgm, and can also include electrical output parameters such as Gm and Gds. For more information about these parameters, refer to the description in the BSIM model or other models. These electrical parameters may vary with voltage.

[0026] Taking PMOS transistor as an example, the following tests can generally be performed to extract device model parameters:

[0027] 1) When Vds = -0.05V, the drain-source current Ids is tested with the gate voltage under different body bias voltages Vbs, that is, it is used to test and obtain the linear region transfer characteristic curve under different body bias voltages; the IC device under test works in the linear region at this time because Vds (i.e., drain-source voltage) = -0.05V;

[0028] 2) When Vds = -Vdd (Vdd is a specific power supply voltage value), the test of the change of drain-source current Ids with gate voltage under different body bias voltages Vbs is used to test and obtain the saturation region transfer characteristic curve under different body bias voltages; the IC device under test works in the saturation region at this time because Vds = -Vdd;

[0029] 3) When the body bias voltage Vbs=0, the test of the change of the drain-source current Ids with the drain-source voltage Vds under different gate voltages Vgs, that is, the test is used to obtain the output characteristic curve of the device;

[0030] 4) When the body bias voltage Vbs=Vbb (Vdd is a specific power supply voltage value), the test of the change of the drain-source current Ids with the drain-source voltage Vds under different gate voltages Vgs is used to test and obtain the output characteristic curve of the device.

[0031] Figure 1 A schematic diagram of four current-voltage curves (specifically output characteristic curves) according to an embodiment of the present application is shown, wherein different body bias voltages are applied to the device under test during the tests of these four current-voltage curves, namely -0.36V, -0.72V, -1.08V and -1.44V, respectively, while other test conditions are the same, including a channel width W of 10 microns, a channel length L of 10 microns, a temperature of 25 degrees Celsius, and a drain-source voltage Vds of 0.1V.

[0032] It can be understood that, when different groups of test conditions are provided, the Figure 1 A plurality of current-voltage curves similar to the curve shown in FIG. 4 constitute a test data set for the integrated circuit device to be parameter extracted.

[0033] However, because the types of test conditions are more, and the conditional variables that can be set for the same test condition can also be different, for example, channel length can be 1 micron, 2 microns, 3 microns, 10 microns, 20 microns, 50 microns, 10 microns, etc., and temperature can be 0 degrees Celsius, 5 degrees Celsius, 10 degrees Celsius, 20 degrees Celsius, 25 degrees Celsius, 30 degrees Celsius, 40 degrees Celsius, 50 degrees Celsius, etc. The number of combinations of the test conditions formed after these different conditional variables are combined is numerous. Like this, the number of current-voltage curves obtained by testing under numerous groups of test conditions is quite a lot, and the capacity of the test data set formed thereby is quite large. On this basis, the extraction of device model parameters needs to consume a large amount of computing resources and time.

[0034] Therefore, in one embodiment of the present application, by providing an extraction condition setting interface in the device model parameter extraction software, and combining the condition variables input by the operator through the extraction condition setting interface into an extraction condition template, a set of test conditions customized by the operator can be obtained. This extraction condition template can be saved for reuse in other model parameter extraction processes. It can be understood that the operator can generate multiple extraction condition templates according to the actual needs of parameter extraction to be used in different parameter extraction processes. In addition, in some embodiments, the operator can combine multiple extraction condition templates into a group of extraction condition templates, and these extraction condition templates can correspond to a part of a group of model parameters to be extracted, in other words, different extraction condition templates can be used for the extraction of certain model parameters, which splits the parameter extraction task of a device model into multiple sub-extraction tasks; since the number of model parameters to be extracted in each sub-extraction task is reduced, the calculation amount of each sub-extraction task is significantly reduced, so even from the overall sum of multiple sub-extraction tasks, the calculation processing time consumed is significantly shortened compared to the original parameter extraction processing time without splitting.

[0035] Figure 2 FIG. 2 shows an extraction condition setting interface according to an embodiment of the present application. Figure 2 As shown, the left side of the extraction condition setting interface includes multiple extraction variable domains, such as the minimum channel length Lmin, the maximum channel length Lmax, the minimum channel width Wmin, the maximum channel width Wmax, etc. Figure 2 In the embodiment shown, the extraction variable domain also includes some other optional predefined variables, as shown in Table 2 below. Figure 2 Example of extracting variable domains in .

[0036] Table 2 Some examples of extracting variable domains

[0037]

[0038] Correspondingly, the right side of the extraction condition setting interface includes multiple extraction variable input boxes, through which the operator can set or select the extraction condition variables corresponding to the extraction variable domain. Figure 2 In the example, the minimum channel length Lmin is set to 0.0, the maximum channel length Lmax is set to 1e4 (um), the minimum channel width Wmin is set to 0.0, and the maximum channel width Wmax is set to 1e4 (um). In this way, an extraction condition template can be generated based at least on the above extraction condition variables, and the extraction condition template limits the range of the channel length to 0.0 to 1e4 (um), and the range of the channel width is also 0.0 to 1e4 (um). It can be understood that the extraction condition template can also include extraction variable values ​​corresponding to other extraction variable domains, such as temperature values. In some embodiments, the extraction condition setting interface may require that the user input provided by the operator includes each settable or selectable extraction condition variable, and if the user input does not include one or more extraction condition variables, the extraction condition setting interface may display a real-time operation reminder; in other embodiments, the extraction condition setting interface may not require that the user input include each settable or selectable extraction condition variable: for extraction condition variables that are not set or selected, the extraction condition setting interface may use a preset extraction condition variable value as a default value, so that a part of the extraction condition variables set or selected by the user is combined with another part of the preset extraction condition variables to generate a corresponding extraction condition template. In some embodiments, the extraction condition template may take the form of a configuration file, which, for example, stores a set of extraction condition variables.

[0039] In some embodiments, the operator can input a custom template identifier, such as a template name, through the extraction condition setting interface, and the custom template identifier can be associated with the extraction condition template and stored. The custom template identifier can make the extraction condition template associated with it easier to identify. For example, Figure 2 The "name" field in the extraction condition setting interface shown is set to "3corners".

[0040] The above-generated extraction condition template can be applied to the test data set to screen the current-voltage curves that meet the extraction conditions specified in the extraction condition template. Afterwards, the set of current-voltage curves screened can be used as a custom test data set. Since the current-voltage curves that do not meet the conditions are screened out, the number of current-voltage curves included in the custom test data set is smaller than that of the unscreened test data set.

[0041] It can be understood that in some embodiments, a portion of the multiple current-voltage curves are screened out through the extraction condition template screening; in other embodiments, depending on the set extraction conditions, curve segments in one or more current-voltage curves, that is, a portion of segments of some curves are screened out. For example, the gate voltage range of the complete output characteristic curve is 0-1V, and after screening, the segments with gate voltages of 0.9V to 1V in the output characteristic curve can be screened out, and only the segments with gate voltages of 0V to 0.9V are retained. It should be noted that in actual testing, test data usually only includes discrete test data (measured results under discrete input voltages, such as Figure 1 As shown), the curve described here is essentially a fitting curve for discrete test data.

[0042] After determining the custom test data set, the device model of the integrated circuit device can be fitted with the custom test data set to generate the device model parameters of the integrated circuit device. Regarding the specific device model parameter extraction method, any existing or future applicable method can be used, and the focus of this application is not on this and it is not limited to it. Since the custom test data set includes less test data than the original test data set, the computing resources and time required for model fitting and parameter extraction calculations are greatly reduced, which effectively improves processing efficiency.

[0043] As mentioned above, the extraction condition template generated by the operator can be saved to share with other operators or be kept for subsequent use. Accordingly, in some embodiments, the stored extraction condition template can be called to screen other test data sets and generate another custom test data set. Afterwards, the device model of the integrated circuit device can be fitted with this custom test data set to generate corresponding device model parameters.

[0044] Figure 3 A method 300 for extracting device model parameters of an integrated circuit device according to an embodiment of the present application is shown. The method 300 involves a process of setting an extraction condition template. Figure 3 As shown, the method 300 includes:

[0045] In step 302, a test data set for the integrated circuit device is provided, wherein the test data set includes a plurality of current-voltage curves obtained by testing the integrated circuit device under a plurality of test conditions, wherein each test condition includes a combination of a plurality of test conditions;

[0046] In step 304, an extraction condition setting interface is provided, wherein the extraction condition setting interface includes a plurality of extraction condition fields, wherein each extraction condition field corresponds to a test condition;

[0047] In step 306, receiving user input, the user input is used to set at least one extraction condition field among the plurality of extraction condition fields of the extraction condition setting interface or select an extraction condition variable;

[0048] At step 308, an extraction condition template is generated based on at least the extraction condition variable input or selected by the user, and the corresponding current-voltage curve is screened from the test data set using the extraction condition template to generate a custom test data set; and

[0049] In step 310, the device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

[0050] In some embodiments, the integrated circuit device is a field effect transistor, and the current-voltage curve includes an input characteristic curve and a transfer characteristic curve.

[0051] In some embodiments, the integrated circuit device is a device selected from the following group: a MOSFET transistor, a SOI transistor, a FinFET transistor, a BJT transistor, a HBT transistor, a TFT transistor, a MESFET transistor, a diode, a resistor or an inductor.

[0052] In some embodiments, the device model of the integrated circuit device is a device model selected from the following group: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM_HV, PSP, GP-BJT or RPI TFT.

[0053] In some embodiments, the step of generating an extraction condition template based at least on the extraction condition variables set or selected by the user input further includes: providing preset extraction condition variables for the extraction condition fields that are not set or selected by the user input among the multiple extraction condition fields; and combining the preset extraction condition variables with the extraction condition variables set or selected by the user to generate the extraction condition template.

[0054] In some embodiments, the method further includes: providing a custom template identifier; and associating the custom template identifier with the extraction condition template, and storing the extraction condition template.

[0055] In some embodiments, the custom test data set includes a portion of a plurality of current-voltage curves of the test data set and / or includes curve segments of one or more current-voltage curves.

[0056] Figure 4 A method 400 for extracting device model parameters of an integrated circuit device according to an embodiment of the present application is shown. The method 400 involves a process of using a pre-saved extraction condition template. Figure 4 As shown, the method 400 includes:

[0057] At step 402, a test data set for the integrated circuit device is provided, the test data set comprising a plurality of current-voltage curves obtained by testing the integrated circuit device under a plurality of test conditions, wherein each test condition comprises a combination of a plurality of test conditions;

[0058] In step 404, receiving user input, the user input is used to select an extraction condition template, the extraction condition template includes a set of extraction condition variables;

[0059] In step 406, the current-voltage curves obtained by testing under a set of test conditions that meet the set of extraction condition variables are screened from the test data set using the extraction condition template to generate a custom test data set; and

[0060] In step 408, the device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

[0061] In some embodiments, the present application also provides some computer program products, which include a non-transitory computer-readable storage medium. The non-transitory computer-readable storage medium includes computer-executable code for executing Figure 3 or Figure 4 Steps in the method embodiment shown.

[0062] The embodiments of the present application can be implemented by hardware, software or a combination of software and hardware. The hardware part can be implemented using dedicated logic; the software part can be stored in a memory and executed by an appropriate instruction execution system, such as a microprocessor or a dedicated design hardware. A person of ordinary skill in the art will appreciate that the above-mentioned devices and methods can be implemented using computer executable instructions and / or contained in a processor control code, such as a carrier medium such as a disk, CD or DVD-ROM, a programmable memory such as a read-only memory (firmware), or a data carrier such as an optical or electronic signal carrier. Such code is provided on the carrier medium. The device and its modules of the present application can be implemented by hardware circuits such as very large-scale integrated circuits or gate arrays, semiconductors such as logic chips, transistors, etc., or programmable hardware devices such as field programmable gate arrays, programmable logic devices, etc., can also be implemented by software executed by various types of processors, and can also be implemented by a combination of the above-mentioned hardware circuits and software, such as firmware.

[0063] It should be noted that, although several modules or sub-modules, steps or sub-steps of the method or apparatus for extracting device model parameters of an integrated circuit device are mentioned in the above detailed description, this division is merely exemplary and not mandatory. In fact, according to an embodiment of the present application, the features and functions of two or more modules described above can be concretized in one module. Conversely, the features and functions of one module described above can be further divided into multiple modules for concretization.

[0064] A person skilled in the art may understand and implement other changes to the disclosed embodiments by studying the specification, the disclosed contents, the drawings and the appended claims. In the claims, the word "comprising" does not exclude other elements and steps, and the wording "a" or "an" does not exclude the plurality. In the actual application of this application, a part may perform the functions of multiple technical features cited in the claims. Any reference signs in the claims should not be construed as limiting the scope.

Claims

1. A method for extracting device model parameters of an integrated circuit device, characterized in that: The method comprises: Providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; Providing an extraction condition setting interface, the extraction condition setting interface comprising a plurality of extraction condition fields, wherein each extraction condition field corresponds to a test condition; receiving a user input, wherein the user input is used to set or select an extraction condition variable for at least one of a plurality of extraction condition fields of the extraction condition setting interface; generating an extraction condition template based at least on the extraction condition variable set or selected by the user input, and using the extraction condition template to filter corresponding test data from the test data set to generate a custom test data set; and The device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

2. The method according to claim 1, characterized in that The test data includes one or more of a current-voltage curve and a capacitance-voltage curve.

3. The method according to claim 2, characterized in that The integrated circuit device is a field effect transistor, and the current-voltage curve includes an input characteristic curve and a transfer characteristic curve.

4. The method according to claim 1, characterized in that: The test data includes a curve of the derived electrical output parameter varying with voltage.

5. The method according to claim 1, characterized in that The integrated circuit device is a device selected from the following group: a MOSFET transistor, a SOI transistor, a FinFET transistor, a BJT transistor, a HBT transistor, a TFT transistor, a MESFET transistor, a diode, a resistor or an inductor.

6. The method according to claim 5, characterized in that The device model of the integrated circuit device is a device model selected from the following group: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM_HV, PSP, GP-BJT or RPITFT.

7. The method according to claim 1, characterized in that The step of generating an extraction condition template based at least on the extraction condition variable set or selected by the user further comprises: For the extraction condition fields that are not set or selected by the user input among the plurality of extraction condition fields, providing a preset extraction condition variable; and The preset extraction condition variables are combined with the extraction condition variables set or selected by the user to generate the extraction condition template.

8. The method according to claim 1, characterized in that The method further comprises: Provide custom template logos; and The custom template identifier is associated with the extraction condition template, and the extraction condition template is stored.

9. The method according to claim 1, characterized in that: The test data includes a voltage-current curve, and the custom test data set includes a portion of a plurality of current-voltage curves of the test data set and / or includes curve segments of one or more current-voltage curves.

10. A method for extracting device model parameters of an integrated circuit device, characterized in that: The method comprises: Providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; receiving a user input, the user input being used to select an extraction condition template, the extraction condition template comprising a set of extraction condition variables, wherein each extraction condition variable in the set of extraction condition variables corresponds to a test condition; Using the extraction condition template to filter test data obtained by testing under a set of test conditions that meet the set of extraction condition variables from the test data set, so as to generate a custom test data set; and The device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

11. The method according to claim 10, characterized in that The test data includes one or more of a current-voltage curve, a capacitance-voltage curve, and a KOP.

12. The method according to claim 11, characterized in that The integrated circuit device is a field effect transistor, and the current-voltage curve includes an input characteristic curve and a transfer characteristic curve.

13. The method according to claim 10, characterized in that The test data includes a curve of a derived electrical output parameter varying with voltage.

14. The method according to claim 10, characterized in that The integrated circuit device is a device selected from the following group: a MOSFET transistor, a SOI transistor, a FinFET transistor, a BJT transistor, a HBT transistor, a TFT transistor, a MESFET transistor, a diode, a resistor or an inductor.

15. The method according to claim 14, characterized in that The device model of the integrated circuit device is a device model selected from the following group: BSIM3, BSIM4, BSIM6, BSIM-CMG, BSIM-IMG, BSIMSOI, UTSOI, HiSIM2, HiSIM_HV, PSP, GP-BJT or RPITFT.

16. The method according to claim 10, characterized in that The extraction condition template includes a combination of one or more preset extraction condition variables and extraction condition variables set or selected by a user, or only includes a combination of extraction condition variables set or selected by the user.

17. The method according to claim 10, characterized in that The test data includes a voltage-current curve, and the custom test data set includes a portion of a plurality of current-voltage curves of the test data set and / or includes curve segments of one or more current-voltage curves.

18. A device for extracting device model parameters of an integrated circuit device, characterized in that: The apparatus includes a non-transitory computer storage medium having one or more executable instructions stored thereon, wherein the one or more executable instructions are executed by a processor to perform the following steps: Providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; Providing an extraction condition setting interface, the extraction condition setting interface comprising a plurality of extraction condition fields, wherein each extraction condition field corresponds to a test condition; receiving a user input, wherein the user input is used to set or select an extraction condition variable for at least one of a plurality of extraction condition fields of the extraction condition setting interface; generating an extraction condition template based at least on the extraction condition variable input or selected by the user, and using the extraction condition template to filter corresponding test data from the test data set to generate a custom test data set; as well as The device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

19. A device for extracting device model parameters of an integrated circuit device, characterized in that: The apparatus includes a non-transitory computer storage medium having one or more executable instructions stored thereon, wherein the one or more executable instructions are executed by a processor to perform the following steps: Providing a test data set for the integrated circuit device, the test data set comprising a plurality of test data obtained by testing the integrated circuit device under a plurality of groups of test conditions, wherein each group of test conditions comprises a combination of a plurality of test conditions; receiving a user input, the user input being used to select an extraction condition template, the extraction condition template comprising a set of extraction condition variables, wherein each extraction condition variable in the set of extraction condition variables corresponds to a test condition; Using the extraction condition template to filter test data obtained by testing under a set of test conditions that meet the set of extraction condition variables from the test data set, so as to generate a custom test data set; as well as The device model of the integrated circuit device is fitted using the custom test data set to generate device model parameters of the integrated circuit device.

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