Switching element, semiconductor device, and method of manufacturing the semiconductor device

Abstract

A switching element, a semiconductor device, and a method of manufacturing a semiconductor device. The switching element according to the present invention is characterized by having: a substrate; a first gate pad formed on the substrate; a second gate pad formed on the substrate; a first resistor portion formed on the substrate for connecting the first gate pad and the second gate pad; and a cell region formed on the substrate and connected to the first gate pad. Thus, after completing the gate resistor built-in switching element, it is possible to measure the gate resistance value of the switching element and select the gate resistance.

Description

[0001] This application is a divisional application of the Chinese national application No.

[0002] 201380079465.4 (PCT / JP2013 / 074284) filed on September 9, 2013 (switching element, semiconductor device, method of manufacturing a semiconductor device), the content of which is incorporated herein by reference. Technical Field

[0003] The present invention relates to a switching element that switches conduction and cutoff of current using an external control signal, a semiconductor device having the switching element, and a method of manufacturing the semiconductor device. Background Art

[0004] In Patent Document 1, a switching element having an internal gate resistor is disclosed.

[0005] The switching element has a plurality of resistor regions under a gate pad portion. Further, in the final process of a wafer process, the plurality of resistor regions are appropriately connected to the gate to obtain a desired gate resistance.

[0006] Patent Document 1: Japanese Patent Laid-Open No. 3-179779 Summary of the Invention

[0007] Sometimes, a semiconductor device having a rated current of several tens to several thousands of amperes is manufactured by connecting a plurality of switching elements in parallel. In such a semiconductor device, if the gate resistance of the switching element fluctuates, the on / off speed and the conduction current value also fluctuate. This causes oscillation or deterioration of the switching element. Therefore, it is preferable to configure a switching element with an internal gate resistor in such a way that it is possible to confirm that the gate resistance value conforms to a standard.

[0008] Regarding the above-described semiconductor device, if the rated current is large, the number of switching elements connected in parallel increases, and if the rated current is small, the number of switching elements connected in parallel decreases. Further, if the number of switching elements connected in parallel changes, the optimum value of the gate resistance value for suppressing gate oscillation and reducing the imbalance of the control signal changes. Therefore, it is preferable to be able to select a gate resistance after the completion of a switching element with an internal gate resistor so that the switching element can cope with multiple types.

[0009] The present invention has been made to solve the above problems, and an object thereof is to provide a switching element capable of measuring a gate resistance value and selecting a gate resistance after the completion of a switching element with an internal gate resistor, a semiconductor device having the switching element, and a method of manufacturing a semiconductor device having the switching element.

[0010] The switching element according to the present invention is characterized by including: a substrate; a first gate pad formed on the substrate; a second gate pad formed on the substrate; a first resistance portion formed on the substrate and connecting the first gate pad and the second gate pad; and a cell region formed on the substrate and connected to the first gate pad.

[0011] The semiconductor device according to the present invention is characterized by including a first switching element, a second switching element, and a wire for supplying a control signal. The first switching element includes: a substrate; a first gate pad formed on the substrate; a second gate pad formed on the substrate; a first resistance portion formed on the substrate and connecting the first gate pad and the second gate pad; and a cell region formed on the substrate and connected to the first gate pad. The second switching element has the same structure as the first switching element and is connected in parallel with the first switching element. The wire is connected to the first gate pad of the first switching element and the first gate pad of the second switching element, or is connected to the second gate pad of the first switching element and the second gate pad of the second switching element.

[0012] The manufacturing method of the semiconductor device according to the present invention is characterized by including: a step of manufacturing a switching element, the switching element including a substrate, a first gate pad, a second gate pad, a first resistance portion, and a cell region, the first gate pad being formed on the substrate, the second gate pad being formed on the substrate, the first resistance portion being formed on the substrate and connecting the first gate pad and the second gate pad, the cell region being formed on the substrate and connected to the first gate pad; a step of measuring the resistance value of the first resistance portion by touching the first gate pad and the second gate pad with a probe; and a step of mounting the switching element on a module when the resistance value meets the standard.

[0013] Other features of the present invention will be clarified below.

[0014] Effects of the Invention

[0015] According to the present invention, after completing the gate resistance built-in switching element, it is possible to measure the gate resistance value and select the gate resistance. Brief Description of the Drawings

[0016] Figure 1 It is a top view schematically showing the switching element according to Embodiment 1 of the present invention.

[0017] Figure 2 It is a top view showing an aluminum wire fixed to the second gate pad.

[0018] Figure 3 It is a top view showing an aluminum wire fixed to the first gate pad.

[0019] Figure 4 This is a top view of the switching element related to the modification example.

[0020] Figure 5 This is a top view of the switching element having a resistance portion as a connection portion.

[0021] Figure 6 This is a top view of the switching element related to Embodiment 2 of the present invention.

[0022] Figure 7 This is a top view of the switching element related to Embodiment 3 of the present invention.

[0023] Figure 8 This is a top view of the switching element related to Embodiment 4 of the present invention.

[0024] Figure 9 This is a top view of the switching element related to Embodiment 5 of the present invention.

[0025] Figure 10 This is a circuit diagram of the semiconductor device related to Embodiment 6 of the present invention. Detailed Embodiments

[0026] With reference to the accompanying drawings, a switching element, a semiconductor device, and a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described. The same or corresponding structural elements are denoted by the same reference numerals, and repeated descriptions may be omitted sometimes.

[0027] Embodiment 1.

[0028] Figure 1 This is a top view schematically showing a switching element 10 according to Embodiment 1 of the present invention. The switching element 10 is an IGBT. The switching element 10 has a substrate 11. A first gate pad 12 and a second gate pad 14 are formed on the substrate 11. A first resistance portion 16 connecting the first gate pad 12 and the second gate pad 14 is formed on the substrate 11. The first resistance portion 16 is a gate resistance built in the switching element 10. The first resistance portion 16 has a high-resistance layer formed by a wafer process. Sometimes, the gate resistance built in the switching element is referred to as an on-chip resistance. In addition, in the drawings, the first resistance portion 16 is represented by a circuit symbol.

[0029] A cell region 18 is formed on the substrate 11. The cell region 18 has a gate wiring portion for receiving a control signal. The gate wiring portion of the cell region 18 is connected to the first gate pad 12 through a wiring 20.

[0030] Next, a method for manufacturing a semiconductor device according to Embodiment 1 of the present invention will be described. First, a switching element 10 is manufactured using a wafer process. Next, a probe (measurement terminal) is brought into contact with the first gate pad 12 and the second gate pad 14 to measure the resistance value of the first resistance portion 16. Next, when the resistance value meets the standard, the switching element 10 is mounted on the module. Then, an aluminum wire for gate wiring that transmits a control signal from the outside is fixed to the first gate pad 12 or the second gate pad 14. In addition, instead of an aluminum wire, other conductive wires may be used.

[0031] In addition, when the resistance value of the first resistance portion 16 does not meet the standard, the switching element 10 is not mounted on the module, but the switching element 10 is discarded. Therefore, compared with the case where the entire semiconductor device is discarded when it is found that the resistance value of the first resistance portion 16 does not meet the standard after the switching element 10 is mounted, the loss amount can be reduced.

[0032] Since the first resistance portion 16 is formed by a wafer process, fluctuations in the resistance value due to fluctuations in process conditions cannot be avoided. Therefore, it is necessary to confirm that the resistance value of the first resistance portion 16 meets the standard. According to the switching element 10 according to Embodiment 1 of the present invention, by bringing the probe into contact with both the first gate pad 12 and the second gate pad 14, the resistance value of the first resistance portion 16 can be measured. Therefore, it is possible to confirm that the resistance value of the first resistance portion 16 meets the standard.

[0033] In particular, when a plurality of switching elements are connected in parallel in a semiconductor device, by confirming that the resistance value (gate resistance value) meets the standard as described above, fluctuations in the resistance values between the switching elements can be suppressed. Therefore, the current does not concentrate on one or several of the plurality of switching elements, and the semiconductor device can operate stably. In addition, in the case where the number of parallel-connected switching elements in the semiconductor device is large, or when the semiconductor device is turned on and off at a high frequency, etc., it is necessary to make the gate resistance values of the respective switching elements in the semiconductor device highly consistent. In such a case, it is preferable to select switching elements having gate resistance values within a desired range based on the gate resistance values of the respective elements measured as described above, and mount them on one semiconductor device. That is, a plurality of switching elements are manufactured, their resistance values are measured, and switching elements having resistance values within the desired range among the plurality of switching elements are selected and mounted on one semiconductor device. Thereby, a high-performance semiconductor device can be obtained with high efficiency.

[0034] Moreover, it is possible to select which of the first gate pad 12 and the second gate pad 14 to fix the aluminum wire to, where the aluminum wire is used to transmit a control signal from the outside. Figure 2It is a top view showing the aluminum wire 22 fixed to the second gate pad 14. By connecting the aluminum wire 22 to the second gate pad 14, the first resistor portion 16 can be used as an on-chip resistor. Figure 3 It is a top view showing the aluminum wire 24 fixed to the first gate pad 12. When the aluminum wire 24 is connected to the first gate pad 12, a switching element without an on-chip resistor can be formed.

[0035] Thus, since the gate resistance can be selected after the switching element 10 is completed, the switching element 10 can be made to cope with multiple varieties. That is, by appropriately selecting the gate resistance, the switching element 10 can be used for multiple varieties with different parallel mounting numbers. Therefore, manufacturing management can be simplified and productivity can be improved.

[0036] Figure 4 It is a top view of the switching element according to the modified example. The first gate pad 26 is formed in the unit region 18. Specifically, the first gate pad 26 is formed at a corner of the unit region 18. Preferably, the first gate pad 26 is provided directly above the gate wiring portion of the unit region 18.

[0037] When the first gate pad 12 is located outside the unit region 18, a connecting portion for connecting the first gate pad 12 to the unit region 18 is required. In Figure 1 the switching element 10, the wiring 20 is used as the connecting portion. However, a resistor portion can also be formed as the connecting portion. Figure 5 It is a top view of the switching element having a resistor portion 40 as the connecting portion. The connecting portion is formed by the resistor portion 40. In this case, by fixing the aluminum wire to the first gate pad 12, the resistor portion 40 can be used as an on-chip resistor. If the aluminum wire is fixed to the second gate pad 14, the series resistance of the first resistor portion 16 and the resistor portion 40 can be used as an on-chip resistor.

[0038] The switching element 10 is not limited to an IGBT. For example, the switching element can also be formed of a power MOSFET. The substrate 11 can also be formed of a wide bandgap semiconductor. As the wide bandgap semiconductor, there are silicon carbide, gallium nitride-based materials, or diamond. In high-speed on-off applications, a wide bandgap semiconductor is sometimes used to form a switching element. In this case, by using the above method to confirm the condition that the gate resistance values of multiple switching elements are the same, the semiconductor device can operate stably. In addition, these modifications can also be applied to the switching element, semiconductor device, and manufacturing method of the semiconductor device according to the following embodiments.

[0039] Embodiment 2.

[0040] Since the switching element, semiconductor device, and method for manufacturing a semiconductor device according to Embodiment 2 of the present invention have many common points with Embodiment 1, the description will focus on the differences from Embodiment 1. Figure 6 FIG. Figure 6 is a top view of the switching element 30 according to Embodiment 2 of the present invention. The switching element 30 has a third gate pad 32 formed on the substrate 11. The second gate pad 14 and the third gate pad 32 are connected by a second resistor portion 34 formed on the substrate 11.

[0041] A method for manufacturing a semiconductor device according to Embodiment 2 of the present invention will be described. First, the switching element 30 is manufactured. Next, a probe is brought into contact with the first gate pad 12 and the second gate pad 14 to measure the resistance value of the first resistor portion 16. Next, a probe is brought into contact with the second gate pad 14 and the third gate pad 32 to measure the resistance value of the second resistor portion 34. Next, a probe is brought into contact with the first gate pad 12 and the third gate pad 32 to measure the series resistance value of the first resistor portion 16 and the second resistor portion 34.

[0042] Next, when the three measured resistance values meet the standards, the switching element 30 is mounted on the module. Then, an aluminum wire is fixed to any one of the first gate pad 12, the second gate pad 14, or the third gate pad 32.

[0043] Here, let the resistance value of the first resistor portion 16 be R1 and the resistance value of the second resistor portion 34 be R2. When the aluminum wire is fixed to the third gate pad 32, the second resistor portion 34 and the first resistor portion 16 can be used as on-chip resistors. The gate resistance value at this time is R1 + R2. When the aluminum wire is fixed to the second gate pad 14, the first resistor portion 16 can be used as an on-chip resistor. The gate resistance value at this time is R1. When the aluminum wire is fixed to the first gate pad 12, a switching element without an on-chip resistor can be formed. Thus, a desired gate resistance value can be selected from among three gate resistance values.

[0044] In Embodiment 2 of the present invention, a probe is brought into contact with the gate pads to measure three resistance values (the resistance value of the first resistor portion 16, the resistance value of the second resistor portion 34, and the series resistance value of the first resistor portion 16 and the second resistor portion 34). However, for example, when it is known in advance that the aluminum wire is fixed to the second gate pad 14, it is possible to measure only the resistance value of the first resistor portion 16 and omit the other measurements. In the following embodiments, it is also possible to omit the measurement of the resistance value of a resistor portion that is known in advance not to be used.

[0045] Embodiment 3.

[0046] Since the switching element, semiconductor device, and manufacturing method of semiconductor device according to Embodiment 3 of the present invention have many common points with Embodiment 1, the description will be centered on the differences from Embodiment 1. Figure 7 FIG. Figure 7 is a top view of the switching element 50 according to Embodiment 3 of the present invention. The switching element 50 has a first additional gate pad 52 formed on the substrate 11. The first additional gate pad 52 is connected to the first gate pad 12 through a first additional resistance portion 54 formed on the substrate 11.

[0047] A manufacturing method of the semiconductor device according to Embodiment 3 of the present invention will be described. First, the switching element 50 is manufactured. Next, a probe is brought into contact with the first gate pad 12 and the second gate pad 14 to measure the resistance value of the first resistance portion 16. Next, a probe is brought into contact with the first gate pad 12 and the first additional gate pad 52 to measure the resistance value of the first additional resistance portion 54. Then, a probe is brought into contact with the first gate pad 12, the second gate pad 14, and the first additional gate pad 52 to measure the parallel resistance value of the first resistance portion 16 and the first additional resistance portion 54.

[0048] Next, when the above three resistance values meet the standards, the switching element 50 is mounted on the module. Then, an aluminum wire is fixed to the first gate pad 12, the second gate pad 14, the first additional gate pad 52, or both the second gate pad 14 and the first additional gate pad 52.

[0049] Here, let the resistance value of the first resistance portion 16 be R1, and the resistance value of the first additional resistance portion 54 be R A 1. When the aluminum wire is fixed to the second gate pad 14, the first resistance portion 16 can be used as an on-chip resistor. The gate resistance value at this time is R1. When the aluminum wire is fixed to the first additional gate pad 52, the first additional resistance portion 54 can be used as an on-chip resistor. The gate resistance value at this time is R A 1. When the aluminum wire is fixed to the first gate pad 12, a switching element without an on-chip resistor can be formed.

[0050] When the aluminum wire is fixed to both the second gate pad 14 and the first additional gate pad 52, the first resistance portion 16 and the first additional resistance portion 54 connected in parallel can be used as an on-chip resistor. The gate resistance value at this time is (R1 × R A 1) / (R1 +

[0051] R A 1). Thus, by simply selecting the connection method of the aluminum wire, the desired gate resistance value can be selected from among four gate resistance values.

[0052] Embodiment 4.

[0053] Since the switching element, semiconductor device, and manufacturing method of semiconductor device involved in Embodiment 4 of the present invention have many common points with Embodiment 3, the description will be centered on the differences from Embodiment 3. Figure 8 It is a top view of the switching element 56 involved in Embodiment 4 of the present invention. The switching element 56 has a second additional gate pad 60 formed on the substrate 11. The second additional gate pad 60 is connected to the first additional gate pad 52 through a second additional resistance portion 62 formed on the substrate 11.

[0054] The switching element described in Embodiment 3 can provide four gate resistance values. However, the switching element 56 involved in Embodiment 4 can provide five gate resistance values in addition to these four gate resistance values. If the resistance value of the second resistance portion 34 is set as R2, and the resistance value of the second additional resistance portion 62 is set as R A 2, the new five gate resistance values are as follows.

[0055] First, when the aluminum wire is fixed to the third gate pad 32, the gate resistance value is R1 + R2. Second, when the aluminum wire is fixed to the second additional gate pad 60, the gate resistance value is R A 1 + R A 2. Third, when the aluminum wire is fixed to both the third gate pad 32 and the second additional gate pad 60, the gate resistance value is ((R2 +

[0056] R1) × (R A 2 + R A 1)) / ((R2 + R1) + (R A 2 + R A 1)).

[0057] Fourth, when the aluminum wire is fixed to both the third gate pad 32 and the first additional gate pad 52, the gate resistance value is ((R2 + R1) × R A 1) / ((R2 + R1)

[0058] + R A 1). Fifth, when the aluminum wire is fixed to both the second gate pad 14 and the second additional gate pad 60, the gate resistance value is (R1 × (R A 2 + R A 1)) / (R1 +

[0059] (R A 2 + R A 1)).

[0060] In the method for manufacturing a semiconductor device according to Embodiment 4 of the present invention, after the switching element 56 is completed, the above nine resistance values are measured. Then, when the above nine resistance values meet the standards, the switching element 56 is mounted on the module. Then, an aluminum wire is fixed to the pad to achieve any one of the nine resistance values. Thus, by simply selecting the connection method of the aluminum wire, it is possible to select a desired gate resistance value from among the nine gate resistance values.

[0061] Embodiment 5.

[0062] Centering on the differences from Embodiment 2, the switching element, semiconductor device, and method for manufacturing a semiconductor device according to Embodiment 5 of the present invention will be described. Figure 9 It is a top view of the switching element 70 according to Embodiment 5 of the present invention. The switching element 70 is characterized in that a plurality of gate pads including the first gate pad 12 and the second gate pad 14 are formed so as to surround the unit region 18.

[0063] When viewed from above, the switching element 70 is a quadrilateral having a first side 11a, a second side 11b, a third side 11c, and a fourth side 11d. The first to third gate pads 12, 14, and 32 are formed along the first side 11a. The fourth to sixth gate pads 72, 74, and 76 are formed along the second side 11b. The seventh to ninth gate pads 78, 80, and 82 are formed along the third side 11c. The tenth to twelfth gate pads 84, 86, and 88 are formed along the fourth side 11d.

[0064] Two adjacent gate pads are connected by a resistance portion. That is, as Figure 9 shown, the first to eleventh resistance portions 16, 34, 90, 92, 94, 96, 98, 100, 102, 104, and 106 are formed. However, the sixth gate pad 76 is not connected to the twelfth gate pad 88. The gate wiring including the gate resistance portion from the sixth gate pad 76 to the first gate pad 12 is connected in parallel with the gate wiring including the gate resistance portion from the twelfth gate pad 88 to the first gate pad 12. After confirming that the resistance values of the first to eleventh resistance portions 16, 34, 90, 92, 94, 96, 98, 100, 102, 104, and 106 meet the standards, the switching element 70 is mounted on the package.

[0065] Then, the aluminum wire is fixed to any one of the 1st - 12th gate pads 12, 14, 32, 72, 74, 76, 78, 80, 82, 84, 86, 88, or the aluminum wire is fixed to the pads at one place respectively for the two gate wirings connected in parallel (to obtain a desired resistance value). The resistance values of the respective resistance portions are previously set to different values, and by simply selecting the connection method of the aluminum wire, a desired gate resistance value can be selected from 78 kinds of gate resistance values.

[0066] The number and arrangement method of the gate pads, and the number and arrangement method of the resistance portions can be appropriately adjusted. They can be appropriately adjusted to prepare a desired combination of gate resistance values. That is, as long as the plurality of gate pads are connected such that all the plurality of gate pads are electrically connected to the 1st gate pad, the number and arrangement method thereof are not particularly limited.

[0067] Embodiment 6.

[0068] Figure 10 This is a circuit diagram of a semiconductor device according to Embodiment 6 of the present invention. This semiconductor device includes a 1st switching element 10A and a 2nd switching element 10B. The 1st switching element 10A and the 2nd switching element 10B have the same structure as the switching element 10 according to Embodiment 1. The 1st switching element 10A and the 2nd switching element 10B are connected in parallel.

[0069] By fixing the aluminum wire to the 2nd gate pad 14 of the 1st switching element 10A and the 2nd gate pad 14 of the 2nd switching element 10B, they are connected to the gate drive circuit 200. The control signal is transmitted from the gate drive circuit 200 to the cell region of the 1st switching element 10A via the 1st resistance portion 16 of the 1st switching element 10A. The same control signal is transmitted from the gate drive circuit 200 to the cell region of the 2nd switching element 10B via the 1st resistance portion 16 of the 2nd switching element 10B.

[0070] According to the method shown in Embodiment 1, the resistance values of the 1st resistance portion 16 of the 1st switching element 10A and the 1st resistance portion 16 of the 2nd switching element 10B conform to the standard. Thus, current imbalance can be avoided. In addition, by selecting whether to connect the aluminum wire to the 1st gate pad 12 or the 2nd gate pad 14, the gate resistance of the switching element can be adjusted. Thus, it is possible to select whether to supply the control signal to the 1st gate pad 12 of the 1st switching element 10A and the 2nd switching element 10B, or to the 2nd gate pad 14 of the 1st switching element 10A and the 2nd switching element 10B, to cope with multiple varieties.

[0071] The first switching element 10A and the second switching element 10B are not limited to the switching element 10 of Embodiment 1, and any of the above-described switching elements may be used. In addition, the number of parallel-connected switching elements is not limited to two, and may be more. In this case, the wires are connected to the first gate pads or the second gate pads of the plurality of switching elements in the above-described manner. Further, the features of the switching elements according to the above-described embodiments may be appropriately combined to enhance the effects of the present invention.

[0072] Description of reference numerals

[0073] 10 Switching element, 11 Substrate, 12 First gate pad, 14 Second gate pad, 16 First resistance portion, 18 Unit region, 20 Wiring, 22, 24 Aluminum wire, 26 First gate pad, 32 Third gate pad, 34 Second resistance portion, 40 Resistance portion,

[0074] 52 First additional gate pad, 54 First additional resistance portion, 60 Second additional gate pad, 62 Second additional resistance portion, 200 Gate drive circuit.

Claims

1. A switching element is connected in parallel with other switching elements to switch the conduction and cutoff of current. It is characterized by having: A semiconductor substrate; A first gate pad formed on the semiconductor substrate and capable of connecting a wire; A second gate pad formed on the semiconductor substrate and capable of connecting a wire; A first resistor portion formed on the semiconductor substrate to connect the first gate pad and the second gate pad; and A unit region formed on the semiconductor substrate and connected to the first gate pad, The first resistor portion is an on-chip resistor built in the switching element, The first resistor portion has a high-resistance layer.

2. The switching element according to claim 1, wherein, It has: A third gate pad formed on the semiconductor substrate; and A second resistor portion formed on the semiconductor substrate to connect the second gate pad and the third gate pad.

3. The switching element according to claim 1 or 2, characterized in that, It has: A first additional gate pad formed on the semiconductor substrate; and A first additional resistor portion formed on the semiconductor substrate to connect the first gate pad and the first additional gate pad.

4. The switching element according to claim 3, characterized in that, It has: A second additional gate pad formed on the semiconductor substrate; and A second additional resistor portion formed on the semiconductor substrate to connect the second additional gate pad and the first additional gate pad.

5. The switching element according to claim 1 or 2, characterized in that The first gate pad is located outside the unit region, The switching element has a connection portion formed on the semiconductor substrate to connect the first gate pad and the unit region.

6. The switching element according to claim 5, characterized in that The connection portion is formed by a wiring.

7. The switching element according to claim 5, characterized in that The connection portion is formed by a resistor portion.

8. The switching element according to claim 1 or 2, characterized in that, It has: A plurality of gate pads including the first gate pad and the second gate pad; and A plurality of resistor portions including the first resistor portion to connect the plurality of gate pads so that all of the plurality of gate pads are electrically connected to the first gate pad, The plurality of gate pads are formed so as to surround the unit region.

9. The switching element according to claim 1 or 2, characterized in that The first gate pad is formed within the unit region.

10. The switching element according to claim 1 or 2, characterized in that The semiconductor substrate is formed of a wide-bandgap semiconductor.

11. The switching element according to claim 10, characterized in that The wide-bandgap semiconductor is silicon carbide, a gallium nitride-based material, or diamond.

12. A semiconductor device, characterized in that The semiconductor device has a plurality of switching elements, and each switching element has: a semiconductor substrate; a first gate pad formed on the semiconductor substrate and capable of connecting a wire; a second gate pad formed on the semiconductor substrate and capable of connecting a wire; a first resistor portion formed on the semiconductor substrate to connect the first gate pad and the second gate pad; and a unit region formed on the semiconductor substrate and connected to the first gate pad. The semiconductor device has a plurality of wires for supplying control signals, and the plurality of wires are respectively connected to the first gate pads or the second gate pads of the plurality of switch elements. The first resistance portion is an on-chip resistor formed by a wafer process and built in the switch element. The first resistance portion has a high-resistance layer. The plurality of switch elements are connected in parallel to switch on and off the current.

13. A method for manufacturing a semiconductor device, characterized in that, It has: A process of manufacturing a switch element that is connected in parallel with other switch elements to switch on and off the current, and has a semiconductor substrate, a first gate pad, a second gate pad, a first resistance portion, and a cell region. The first gate pad is formed on the semiconductor substrate and can be connected to a wire, the second gate pad is formed on the semiconductor substrate and can be connected to a wire, the first resistance portion is formed on the semiconductor substrate to connect the first gate pad and the second gate pad, and the cell region is formed on the semiconductor substrate and is connected to the first gate pad. A process of measuring the resistance value of the first resistance portion by touching the first gate pad and the second gate pad with a probe; And A process of mounting the switch element on the module when the resistance value meets the standard. The first resistance portion is an on-chip resistor formed by a wafer process and built in the switch element. The first resistance portion has a high-resistance layer.

14. A method of manufacturing a semiconductor device, characterized in that, It has: A process of manufacturing a plurality of switch elements, which have a semiconductor substrate, a first gate pad, a second gate pad, a first resistance portion, and a cell region. The first gate pad is formed on the semiconductor substrate and can be connected to a wire, the second gate pad is formed on the semiconductor substrate and can be connected to a wire, the first resistance portion is formed on the semiconductor substrate to connect the first gate pad and the second gate pad, and the cell region is formed on the semiconductor substrate and is connected to the first gate pad; A process of measuring the resistance value of the first resistance portion by touching the first gate pad and the second gate pad with a probe for each of the plurality of switch elements; And A process of selecting the switch elements among the plurality of switch elements whose resistance values are within a desired range and mounting the selected switch elements on one semiconductor device. The first resistance portion is an on-chip resistor formed by a wafer process and built in the switch element. The first resistance portion has a high-resistance layer. The plurality of switch elements are connected in parallel to switch on and off the current.

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