Semiconductor device packaging and manufacturing methods

Abstract

This invention provides a semiconductor device package including a substrate, a separator structure, and a polymer film. The separator structure is disposed on the substrate and defines a space for accommodating a semiconductor device. The polymer film is adjacent to the distal end of the separator structure on the substrate. A first side surface of the polymer film is substantially aligned with a first side surface of the separator structure.

Description

Technical Field

[0001] This invention generally relates to a semiconductor device package and a method for manufacturing the same. More specifically, this invention relates to a semiconductor device package comprising a polymer film and a method for manufacturing the same. Background Technology

[0002] In consumer electronics, optical packaging tends towards thinner and smaller product characteristics. For example, the overall thickness of the optical sensor package becomes a critical specification due to system assembly housing requirements. Among other optical packages, optical land grid arrays (OLGAs) are a widely used type of optical sensor package. OLGA packages typically consist of a housing for the optical sensor and a glass cover over the sensor. The thickness of the glass cover is typically over 200 μm. With advancements in the miniaturization of device packaging structures, there is a need to reduce the thickness of the package structure. Therefore, providing solutions to address this issue has become a challenge. Other optical packages, such as pre-molded quad flat no-leads (QFN), open cavity QFN, or similar types, face the same obstacles to thickness reduction. Summary of the Invention

[0003] In one or more embodiments, a semiconductor device package includes a substrate, a separator structure, and a polymer film. The separator structure is disposed on the substrate and defines a space for accommodating a semiconductor device. The polymer film is adjacent to a distal end of the separator structure on the substrate. A first side surface of the polymer film is substantially aligned with a first side surface of the separator structure.

[0004] In one or more embodiments, a semiconductor device package includes a substrate, a separator structure, and a polymer film. The separator structure is disposed on the substrate and defines a space for accommodating a semiconductor device. The polymer film is disposed above the separator structure. The width of the polymer film is substantially the same as the width of the separator structure.

[0005] In one or more embodiments, a method for manufacturing a semiconductor device package includes: setting a substrate; forming a separation structure on the substrate, the separation structure including a plurality of spaces each configured to accommodate a semiconductor device; and disposing a polymer film on the separation structure and covering the spaces. Attached Figure Description

[0006] When read in conjunction with the accompanying drawings, aspects of the invention are best understood from the following detailed description. It should be noted that various features may not be drawn to scale, and the dimensions of various features may be arbitrarily increased or decreased for clarity of explanation.

[0007] Figure 1A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0008] Figure 2 A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0009] Figure 3 A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0010] Figure 4 A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0011] Figure 5 A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0012] Figure 6 A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0013] Figure 7A A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0014] Figure 7B A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0015] Figure 7C A cross-sectional view illustrating a semiconductor device package according to some embodiments of the present invention;

[0016] Figure 8A , Figure 8B and Figure 8C This describes various operations in a method for manufacturing a semiconductor device package according to some embodiments of the present invention;

[0017] Figure 9A , Figure 9B , Figure 9C and Figure 9D This describes various operations in a method for manufacturing a semiconductor device package according to some embodiments of the present invention; and

[0018] Figure 10 The transmittance and wavelength spectrum of glass and various composite films according to some embodiments of the present invention are shown.

[0019] Throughout the figures and detailed description, common reference numerals are used to indicate the same or similar components. The invention will become more apparent from the following detailed description in conjunction with the accompanying drawings. Detailed Implementation

[0020] In some embodiments, the present invention provides a semiconductor device package that uses a polymer film to replace a conventional glass cover. The polymer film can achieve a thickness of less than 200 μm and maintains transmittance comparable to that of a conventional glass cover at a peak wavelength of interest, for example, longer than 400 nm. Furthermore, the polymer film of the present invention avoids the glass cutting and / or cleaning operations that typically result in higher costs and lower yields due to cracking and peeling.

[0021] In some embodiments, the polymer film of the present invention comprises a fluoropolymer film. The fluoropolymer film has a sufficiently high melting point suitable for continuous reflow soldering operations typically performed in device packaging.

[0022] In some embodiments, the fluoropolymer film is adhered to a partition structure housing a semiconductor device by means of a bonding layer. The bonding layer is selected to be transparent to the peak wavelength emitted by or configured to be received by the semiconductor device. For example, the bonding layer may be made primarily of silicone.

[0023] Figure 1 A cross-sectional view of a semiconductor device package 10 according to some embodiments of the present invention is shown. The semiconductor device package 10 includes a substrate 110, a separator structure 130, a polymer film 140, and a bonding layer 150.

[0024] The substrate 110 has a surface 110a (also referred to as a "top surface"), a surface 110b opposite to surface 110a (also referred to as a "bottom surface"), and side surfaces 110s extending between surfaces 110a and 110b. The substrate 110 may include one or more conductive pads 111 for electrical connections. In some embodiments, the conductive pads 111 may be adjacent to, near, or embedded in and exposed on the bottom surface of the substrate 110 (e.g., surface 110a). The substrate 110 may include interconnect structures, such as redistribution layers (RDLs) or grounding components. In some embodiments, the substrate 110 is formed of or includes one or more organic materials (e.g., molding compounds, bismaleimide triazine (BT) resin, polyimide (PI), polybenzoxazole (PBO), solder resist, Ajinimoto accumulator (ABF), polypropylene (PP), epoxy materials, FR4, or combinations thereof) or inorganic materials (e.g., silicon, glass, ceramics, quartz, sapphire, silicon oxide, silicon nitride, or combinations thereof). In some embodiments, the conductive pad 111 is formed of or includes gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), other metals or alloys, or combinations thereof. In some embodiments, the substrate 110 may be referred to as a carrier of the semiconductor device package 10.

[0025] A partition structure 130 is disposed on a substrate 110 and defines a space 131 for accommodating a semiconductor device 120. In some embodiments, the partition structure 130 has a side surface 132 (also referred to as an “inner wall”) defining the space 131. In some embodiments, the partition structure 130 has a side surface 130s (also referred to as an “outer wall”) opposite to the side surface 132.

[0026] Semiconductor device 120 may be disposed on a top surface (e.g., surface 110a) of substrate 110. Semiconductor device 120 has surface 120a (also referred to as the "top surface") and a surface 120b (also referred to as the "bottom surface") opposite surface 120a. In some embodiments, the bottom surface (e.g., surface 120b) of semiconductor device 120 directly contacts the top surface (e.g., surface 110a) of substrate 110. In some embodiments, semiconductor device 120 is spaced apart from partition structure 130. In some embodiments, the top surface (e.g., surface 120a) of semiconductor device 120 is spaced apart from the inner wall (e.g., side surface 132) of partition structure 130. In some embodiments, semiconductor device 120 includes optical devices. Surface 120a may be a light-emitting surface or a light-receiving surface. In some embodiments, partition structure 130 is opaque to peak wavelengths emitted by or configured to be received by semiconductor device 120.

[0027] A polymer film 140 is disposed above the separator structure 130. In some embodiments, the polymer film 140 is disposed adjacent to one side of the separator structure 130 at the distal end of the substrate 110. In some embodiments, the width W1 of the polymer film 140 is substantially the same as the width W2 of the separator structure 130. In some embodiments, the side surface 140s of the polymer film 140 is substantially aligned with the side surface 130s of the separator structure 130. In some embodiments, the side surface 140s of the polymer film 140 and the side surface 130s of the separator structure 130 form a continuous cross-sectional surface (also referred to as a “monomerized surface”). In some embodiments, the polymer film 140 has a side surface 140s' opposite to the side surface 140s, the separator structure 130 has a side surface 130s' opposite to the side surface 130s, and the side surface 140s' of the polymer film 140 is substantially aligned with the side surface 130s' of the separator structure 130. In some embodiments, the side surface 140s of the polymer film 140 is substantially aligned with the side surface 110s of the substrate 110.

[0028] In some embodiments, the polymer film 140 further includes a surface 140a (also referred to as a "top surface") and a surface 140b (also referred to as a "bottom surface") opposite to surface 140a, and surfaces 140s and 140s' extend between surfaces 140a and 140b. Surface 140b facing the semiconductor device 120 directly contacts the bonding layer 150. In some embodiments, the polymer film 140 is composed of a fluoropolymer. In some embodiments, the polymer film 140 is composed of ethylene tetrafluoroethylene (ETFE), perfluoroalkoxyalkane (PFA), or a combination thereof. In some embodiments, the polymer film 140 is a fluoropolymer tape. In some embodiments, the thickness of the polymer film 140 is less than 150 μm. In some embodiments, the thickness of the polymer film 140 is in the range of about 25 μm to about 100 μm. In some embodiments, the thickness of the polymer film 140 is in the range of about 50 μm to about 75 μm. In some embodiments, the semiconductor device 120 includes an optical device configured to emit or receive light through the polymer film 140.

[0029] When a glass cover is positioned above an optical sensor within a housing of an optical sensor package, a large glass substrate needs to be cut and cleaned to manufacture the glass cover, which is then assembled into the housing. Peeling and / or cracking of the glass substrate can easily occur during the cutting and cleaning process, leading to an unintended decrease in manufacturing yield. According to some embodiments of the invention, the polymer film 140 is relatively less prone to cracking, thus effectively preventing peeling and / or cracking problems and improving manufacturing yield.

[0030] Furthermore, glass cover plates or glass substrates typically have a thickness exceeding 200 μm. Thick glass cover plates not only increase the overall thickness and weight of the optical sensor package but may also increase the probability of peeling and / or cracking of the glass cover plate and / or glass substrate. According to some embodiments of the invention, by replacing the glass cover plate with a polymer film 140 (e.g., a fluoropolymer film) disposed on the separation structure 130 of the semiconductor device package 10, the polymer film 140 (especially a fluoropolymer film) has good chemical resistance, desired optical transparency at the peak wavelength of interest, and a sufficiently high melting point to withstand reflow soldering operations. Moreover, the polymer film 140 is less expensive than glass materials. Therefore, the overall thickness of the semiconductor device package 10 can be reduced while maintaining satisfactory optical properties, and manufacturing costs can also be reduced.

[0031] A bonding layer 150 is disposed between the separator 130 and the polymer film 140. In some embodiments, the bonding layer 150 directly contacts the separator 130 and the polymer film 140. In some embodiments, the polymer film 140 is adhered to the separator 130 via the bonding layer 150. In some embodiments, the polymer film 140 is spaced apart from the separator 130 via the bonding layer 150. In some embodiments, the side surfaces 150s of the bonding layer 150 are substantially aligned with the side surfaces 140s of the polymer film 140. In some embodiments, the bonding layer 150 is transparent to peak wavelengths emitted by or configured to be received by the semiconductor device 120. In some embodiments, the bonding layer 150 is a silicone layer.

[0032] In some embodiments, the bonding layer 150 is exposed in the space 131 of the partition structure 130. In some embodiments, the partition structure 130 includes a surface 130a (also referred to as a “top surface”) angled to a side surface 132, and the bonding layer 150 directly contacts the surface 130a and the side surface 132 of the partition structure 130. In some embodiments, a portion 150p of the bonding layer 150 extends into the space 131 of the partition structure 130. In some embodiments, a portion 150p of the bonding layer 150 protrudes toward the semiconductor device 120. In some embodiments, the side surface 132 of the partition structure 130 directly contacts a portion 150p of the bonding layer 150. In some embodiments, the thickness of the bonding layer 150 is less than 50 μm. In some embodiments, the thickness of the bonding layer 150 is less than 30 μm. In some embodiments, the thickness of the bonding layer 150 is in the range of about 10 μm to about 25 μm. In some embodiments, the sum of the thickness of the polymer film 140 and the thickness of the bonding layer 150 is less than 150 μm. In some embodiments, the sum of the thickness of the polymer film 140 and the thickness of the bonding layer 150 is less than 100 μm. In some embodiments, the sum of the thickness of the polymer film 140 and the thickness of the bonding layer 150 is less than 80 μm.

[0033] Figure 2 A cross-sectional view of a semiconductor device package 20 according to some embodiments of the present invention is illustrated. Except, for example, the semiconductor device package 20 further includes a hard coating 160, the semiconductor device package 20 is similar to... Figure 1 Semiconductor device package 10.

[0034] A hard coating 160 is disposed on the polymer film 140. In some embodiments, the side surface 160s of the hard coating 160 is substantially aligned with the side surface 140s of the polymer film 140. In some embodiments, the hard coating 160 directly contacts the polymer film 140. In some embodiments, the thickness of the hard coating 160 is equal to or less than the thickness of the polymer film 140. In some embodiments, the sum of the thicknesses of the polymer film 140 and the hard coating 160 is less than 150 μm. In some embodiments, the sum of the thicknesses of the polymer film 140 and the hard coating 160 is less than 110 μm.

[0035] In some embodiments, the hard coating 160 is transparent to peak wavelengths emitted by or configured to be received by the semiconductor device 120. According to some embodiments of the invention, the arrangement of the hard coating 160 facilitates increased mechanical strength of the entire semiconductor device package 20 while providing sufficient transparency for the peak wavelength of interest.

[0036] Figure 3 A cross-sectional view of a semiconductor device package 20 according to some embodiments of the present invention is illustrated. More specifically, Figure 3 This can be illustrated as a cross-sectional view of the semiconductor device package 20 in the yz plane, as viewed along the x-direction. In some embodiments, Figure 3 A side view of the semiconductor device package 20 as viewed along the x-direction (e.g., a schematic diagram of the outer sidewall) can be illustrated.

[0037] In some embodiments, such as by Figure 3 As shown in the side view, the side surface 140s of the polymer film 140 is exposed from the side surface 130s of the separating structure 130 and the side surface 150s of the bonding layer 150. In some embodiments, such as by Figure 3 As shown in the side view, the side surface 140s of the polymer film 140 is exposed from the side surface 160s of the hard coating 160 and the side surface 150s of the bonding layer 150.

[0038] Figure 4 A cross-sectional view of a semiconductor device package 30 according to some embodiments of the present invention is illustrated. Except, for example, the separator 130 directly contacts the semiconductor device 120, the semiconductor device package 30 is similar to... Figure 1 Semiconductor device package 10.

[0039] In some embodiments, the semiconductor device 120 has a side surface 120s extending between surfaces 120a and 120b. In some embodiments, a separator structure 130 covers a portion of surface 120a of the semiconductor device 120. In some embodiments, the separator structure 130 directly contacts a portion of surface 120a of the semiconductor device 120. In some embodiments, the separator structure 130 completely covers the side surface 120s of the semiconductor device 120. In some embodiments, the separator structure 130 directly contacts the side surface 120s of the semiconductor device 120. In some embodiments, the semiconductor device package 30 may be referred to as an open cavity QFN or an open cavity quad flat package (QFP). In some embodiments, the separator structure 130 may be composed of a polymeric material, epoxy resin, epoxy resin with filler, molding compound, or the like.

[0040] Figure 5 The illustration shows a cross-sectional view of a semiconductor device package 30A according to some embodiments of the present invention. Except, for example, a portion 150p of the bonding layer 150 extends into the space 131 of the separator structure 130, the semiconductor device package 30A is similar to... Figure 4 Semiconductor device package 30.

[0041] In some embodiments, a portion 150p of the bonding layer 150 protrudes toward the semiconductor device 120. In some embodiments, the side surface 132 of the separator 130 directly contacts a portion 150p of the bonding layer 150.

[0042] Figure 6 A cross-sectional view of a semiconductor device package 40 according to some embodiments of the present invention is illustrated. Except, for example, at least partially embedded in the separator structure 130 of the polymer film 140, the semiconductor device package 40 is similar to... Figure 1 Semiconductor device package 10.

[0043] In some embodiments, the end portion 140p of the polymer film 140 is embedded in the separator structure 130. In some embodiments, portions of surfaces 140a and 140b of the polymer film 140 are in direct contact with the separator structure 130. In some embodiments, surfaces 140a and 140b of the polymer film 140 are positioned between the semiconductor device 120 and the top surface (e.g., surface 130a) of the separator structure 130. Side surfaces 140s and 140s' of the polymer film 140 are exposed from the separator structure 130, or even aligned with said side surfaces.

[0044] Figure 7A , 7B Figures 7C illustrate cross-sectional views of a semiconductor device package 40 according to some embodiments of the present invention. More specifically, Figure 7A , 7BFigure 7C illustrates a cross-sectional view of the semiconductor device package 40 in the yz plane, as viewed along the x-direction. For example, Figure 7A , 7B And 7C can explain the traversal along the vertical. Figure 6 A cross-sectional view of the semiconductor device package 40 along dotted line A. In some other embodiments, Figure 7A , 7B The diagram above illustrates a side view of the semiconductor device package 40 as viewed along the x-direction. Figure 7A , 7B The various types of semiconductor device packages 40 depicted in the side view of 7C allow material of the separating structure 130 to flow and transfer between the spaces of the molding die above and below the panel polymer film. Details of the process will be described in the present invention. Figures 9A to 9D middle.

[0045] like Figure 7A As illustrated, in some embodiments, the end portion 140p of the polymer film 140 is embedded in the separator structure 130. In some embodiments, the top surface (e.g., surface 140a) of the polymer film 140 is below the top surface (e.g., surface 130a) of the separator structure 130. In some embodiments, surfaces 140a and 140b of the polymer film 140 are located between the top surface (e.g., surface 130a) of the separator structure 130 and the substrate 110.

[0046] like Figure 7B As described herein, in some embodiments, the separator 130 includes a through portion 130p that penetrates the polymer film 140. In some embodiments, the through portion 130p of the separator 130 penetrates the end portion 140p of the polymer film 140. In some embodiments, the through portion 130p is surrounded by the polymer film 140. In some embodiments, wherein... Figure 7B A side view of the outer sidewall of the semiconductor device package 40, as viewed along the x-direction, is shown, with the side surface of the through portion 130p of the separator 130 substantially aligned with the side surface of the end portion 140p of the polymer film 140.

[0047] like Figure 7CAs described herein, in some embodiments, the separator 130 includes through portions 130p and 130p', which penetrate the polymer membrane 140. In some embodiments, the through portions 130p and 130p' penetrate the end portion 140p of the polymer membrane 140. In some embodiments, the through portions 130p and 130p' are surrounded by the polymer membrane 140. In some embodiments, the dimension D2 of the through portion 130p' is different from the dimension D1 of the through portion 130p. In some embodiments, the separator 130 may include two or more through portions that are the same or different from each other in terms of size.

[0048] Figure 8A , 8B Figures 8C illustrate various operations in a method of manufacturing a semiconductor device package 10 according to some embodiments of the invention. The figures have been simplified for a better understanding of aspects of the invention.

[0049] refer to Figure 8A A polymer film 140A is formed. Subsequently, a bonding layer 150A and a hard coating layer 160A are formed on the polymer film 140A. In some embodiments, the polymer film 140A has a surface 140Aa and a surface 140Ab opposite to surface 140Aa, the bonding layer 150A is formed on surface 140Aa of the polymer film 140A, and the hard coating layer 160A is formed on surface 140Ab of the polymer film 140A. In some embodiments, the polymer film 140A, the bonding layer 150A, and the hard coating layer 160A are transparent to the peak wavelength emitted by or configured to be received by a semiconductor device 120, which will be arranged in a semiconductor device package 10 in a subsequent process. In some embodiments, the polymer film 140A is a fluoropolymer tape. In some embodiments, the bonding layer 150A is an adhesive layer. In some embodiments, the bonding layer 150A is a silicone layer.

[0050] refer to Figure 8BA substrate 110A is disposed, and a separation structure 130A is formed on the substrate 110A. In some embodiments, the separation structure 130A includes a plurality of spaces 131, each of which is configured to accommodate one or more semiconductor devices 120. In some embodiments, the separation structure 130A is opaque to peak wavelengths emitted by or configured to be received by the semiconductor devices 120. Subsequently, a polymer film 140A is adhered to the separation structure 130A via a bonding layer 150A. In some embodiments, the polymer film 140A is disposed on the separation structure 130A and covers the spaces 131. In some embodiments, the bonding layer 150A includes an adhesive material having a relatively low viscosity relative to the separation structure 130, and thus being partially squeezed into the spaces 131 along the inner sidewall of the separation structure 130 when pressure is applied, such that a portion 150p of the bonding layer 150A protrudes into the spaces 131.

[0051] refer to Figure 8C After the polymer film 140A is placed on the separator structure 130A, a monomerization operation is performed to separate the substrate 110A, separator structure 130A, polymer film 140A, bonding layer 150A, and hard coating 160A. In some embodiments, the monomerization operation includes cutting the substrate 110A, separator structure 130A, polymer film 140A, bonding layer 150A, and hard coating 160A along the dashed line L between adjacent semiconductor devices 120. After performing the monomerization operation, a structure is formed as shown in the figure. Figure 1 The semiconductor device package 10 shown is illustrated.

[0052] When glass is used as a cover for an optical sensor package, each glass cover in each package must be formed before monomerization by cleaning and cutting a larger glass substrate, and then assembling each glass cover to the corresponding housing structure to form each optical sensor package. If a larger glass substrate is assembled before monomerization, it may be prone to cracking during monomerization, for example, by cutting, which could adversely affect manufacturing yield. In contrast, according to some embodiments of the invention, the polymer film 140A is less prone to cracking and has sufficient transparency to the peak wavelength of interest, comparable to that of glass. Therefore, the polymer film 140A can be assembled to the separator structure 130A before monomerization, so that the polymer film 140A does not crack and / or peel off during monomerization, improving the manufacturing yield of the semiconductor device package 10 and simplifying the manufacturing process.

[0053] Figure 9A , 9BFigures 9C and 9D illustrate various operations in a method of manufacturing a semiconductor device package 40 according to some embodiments of the present invention. The figures have been simplified for a better understanding of aspects of the invention.

[0054] refer to Figure 9A A molding die 900 is provided, comprising an upper member 910 and a lower member 920 defining a plurality of cavities 930. Additionally, a polymer film 140A having through holes 940 is provided before a polymer film 140A is placed between the upper member 910 and the lower member 920. In some embodiments, each of the through holes 940 is formed within and surrounded by the polymer film 140A. In some embodiments, the through holes 940 can be formed, for example, by a stamping operation, wherein holes of a predetermined area density are formed by puncturing the polymer film 140A.

[0055] It should be noted that the through-holes 940 can only be formed in certain areas of the polymer film 140A, and as... Figure 9A The cross-sectional view shown is taken along the line forming the through hole 940. Other cross-sectional views ( Figure 9A (Not shown in the image) can be cut along other regions of the polymer film 140A that do not contain the through-holes 940, and a continuous polymer film 140A without the through-holes 940 can be shown in these cross-sectional views. For example, as Figure 6 The cross-sectional view shown illustrates a region in the polymer film 140 that does not contain through holes 940 and therefore does not contain through portions 130p.

[0056] Still referencing Figure 9A Subsequently, the polymer film 140A is placed between the upper component 910 and the lower component 920, and the through hole 940 of the polymer film 140A is positioned in the cavity 930 of the molding die 900, as follows. Figure 9A As shown in the diagram. In some embodiments, portions of the polymer film 140 in each of the cavities 930 are arranged to have at least one of the through holes 940. Next, a separating structural material is injected into the molding die 900 and through the communication portion of the through hole 940, and the separating structural material can completely fill the cavity 930 of the molding die 900, thereby encapsulating the polymer film 140A. In some embodiments, the separating structural material comprises a curable material, such as a liquid crystal polymer (LCP).

[0057] refer to Figure 9B The partition structure material is cured and demolded to form the partition structure 130A. In some embodiments, the through hole 940 is filled with the cured partition structure material to form the through portion 130p of the partition structure 130A. Then, the upper member 910 and the lower member 920 are removed. Figure 9A and Figure 9BAs shown, the partition structure 130 is formed by insert molding according to some embodiments of the present invention.

[0058] refer to Figure 9C A semiconductor device 120 is disposed on a substrate 110A, and a separator structure 130A in which a polymer film 140A is embedded is disposed on the substrate 110A, thereby defining a plurality of spaces 131 by the substrate 110A, the separator structure 130A, and the polymer film 140A. In some embodiments, each of the semiconductor devices 120 is disposed correspondingly in each of the spaces 131.

[0059] refer to Figure 9D A monomerization process is performed to separate the substrate 110A, the separator structure 130A, and the polymer film 140A. This forms a structure as follows: Figure 6 The semiconductor device package 40 shown is illustrated.

[0060] According to some embodiments of the present invention, when the separator material is injected into the molding die 900, a polymer film 140A is placed in the molding die 900 for the injection molding process used to form the separator structure 130A, followed by a curing process of the separator material. This allows the polymer film 140A to be stably embedded in the formed separator structure 130A without applying any additional adhesives and / or bonding structures between the polymer film 140A and the separator structure 130A. Therefore, in the formed semiconductor device package 40, the polymer film 140 can be stably attached to the separator structure 130, and thus the semiconductor device package 40 has sufficient transparency and improved reliability at the peak wavelength of interest.

[0061] remove Figures 9A to 9D In addition to the operation described above, which involves placing the polymer film 140A in a plate-like form within the encapsulation mold 900 before injecting the separator material, an alternative operation can be performed by cutting the polymer film 140A to a suitable size covering approximately the area of ​​a single space 131 of the separator structure 130 (e.g., a "monomerized polymer film"), and placing the monomerized polymer film in a monomerized form within a single encapsulation mold (not shown). This latter operation is performed sequentially and may not include the monomerization operation used in the former operation, i.e., separating the plate-like polymer film from the plate-like separator structure. This latter operation can also be performed using an insert molding technique.

[0062] Figure 10 The transmittance and wavelength spectra of glass G and various composite films F1 and F2 according to some embodiments of the present invention are shown. Figure 10In the embodiment shown, the glass G has a thickness of approximately 150 μm, which is thinner than glass covers conventionally used in optical packaging. In such... Figure 10 In the illustrated embodiments, both composite films F1 and F2 are bilayer films made of a fluoropolymer film and a bonding layer, respectively. The fluoropolymer is primarily made of perfluoroalkoxyalkane (PFA), and the bonding layer is primarily made of silicone. Figure 10 In the embodiment shown, no reflow soldering process is performed on composite film F1, and three reflow soldering processes are performed on composite film F2. The reflow soldering process for composite film F2 is performed at a temperature of approximately 260°C, according to the standard operating procedures and processes for reflow soldering as defined in the JEDEC standard.

[0063] like Figure 10 As shown, both composite films F1 and F2 have sufficient transparency at the peak wavelength of interest, such as 390 nm or longer. Figure 10 The spectra clearly show that both composite films F1 and F2 have sufficient transparency for the peak wavelength of interest, comparable to that of thin glass G. In... Figure 10 In some embodiments shown, both composite films F1 and F2 have a transparency rating of at least 70% for the peak wavelength of visible light. Furthermore, the high-temperature processing, such as reflow soldering, does not reduce the transmittance of the fluoropolymer in the polymer films used in this invention, as demonstrated in the transmittance of composite films F1 and F2. Based on the foregoing, composite films according to some embodiments of the invention possess the desired optical transparency at the peak wavelength of interest.

[0064] As used herein, the terms “about,” “substantially,” “essentially,” and “approximately” are used to describe and explain small variations. When used in conjunction with an event or situation, the terms may refer to a situation where the event or situation clearly occurred or is very close to occurring. For example, when used in conjunction with a numerical value, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if the difference between two values ​​is less than or equal to ±10% of the average of the values, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the two values ​​can be considered "substantially" or "approximately" the same. For example, "substantially" parallel can refer to an angular variation of less than or equal to ±10° relative to 0°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, "generally" vertical can refer to an angle variation range of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°.

[0065] If the displacement between two surfaces is no greater than 5 μm, 2 μm, 1 μm, or 0.5 μm, then the two surfaces can be considered coplanar or substantially coplanar.

[0066] As used herein, the terms “conductive,” “electrically conductive,” and “conductivity” refer to the ability to conduct electric current. Conductive materials typically indicate those that exhibit minimal or zero resistance to the flow of electric current. One measure of conductivity is Siemens per meter (S / m). Typically, conductive materials have a conductivity greater than approximately 10. 4 S / m (e.g., at least 10) 5 S / m or at least 10 6 The conductivity of a material is measured in S / m. The conductivity of a material can vary with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0067] Unless the context clearly specifies otherwise, as used herein, the singular terms “a / an” and “the” can include multiple referents. In the description of some embodiments, a component disposed “on” or “above” another component can cover situations where the preceding component is directly on the following component (e.g., in physical contact with the following component) and situations where one or more intervening components are positioned between the preceding and following components.

[0068] Although the invention has been described and illustrated with reference to specific embodiments thereof, such description and illustration are not intended to limit the invention. It will be readily understood by those skilled in the art that various changes may be made and equivalent components may be substituted within the embodiments without departing from the true spirit and scope of the invention as defined by the appended claims. Illustrations may not be drawn to scale. Differences may exist between process reproduction in the invention and actual equipment due to variables such as those in the manufacturing process. Other embodiments of the invention may exist that are not specifically described. The specification and drawings should be considered illustrative rather than restrictive. Modifications may be made to adapt particular circumstances, materials, compositions, methods, or processes to the objectives, spirit, and scope of the invention. All such modifications are intended to be within the scope of the appended claims. Although the methods disclosed herein have been described with reference to specific operations performed in a particular order, it will be understood that these operations may be combined, subdivided, or rearranged to form equivalent methods without departing from the teachings of the invention. Therefore, unless specifically indicated herein, the order and grouping of operations are not intended to limit the invention.

Claims

1. A semiconductor device package comprising: Substrate; A separation structure disposed on the substrate and defining a space for accommodating a semiconductor device; A polymer membrane disposed above the separator structure, wherein the polymer membrane is composed of a fluoropolymer and a first side surface of the polymer membrane is substantially aligned with a first side surface of the separator structure; and A bonding layer is disposed between the separator structure and the polymer film, a portion of the bonding layer extending into the space of the separator structure, wherein the polymer film and the bonding layer are transparent to peak wavelengths emitted by or configured to be received by the semiconductor device.

2. The semiconductor device package of claim 1, wherein the fluoropolymer of the polymer film is composed of perfluoroalkoxyalkane (PFA), the bonding layer is composed of silicone, and both the polymer film and the bonding layer have a transparency rating of at least 70% for the peak wavelength of visible light.

3. The semiconductor device package of claim 1, wherein the semiconductor device includes an optical device configured to emit or receive light through the polymer film and the bonding layer.

4. The semiconductor device package of claim 1, wherein the first side surface of the polymer film is substantially aligned with the first side surface of the substrate, and the polymer film substantially and integrally covers the separation structure.

5. The semiconductor device package according to claim 1, wherein: The bonding layer substantially covers the entire separation structure. The thickness of the polymer film is in the range of 25 μm to 100 μm. The thickness of the bonding layer is in the range of 10 μm to 25 μm.

6. The semiconductor device package of claim 5, wherein the polymer film substantially integrally covers the bonding layer.

7. The semiconductor device package of claim 5, wherein a portion of the bonding layer extends downward into the space of the partition structure to protrude toward the semiconductor device.

8. The semiconductor device package of claim 1, further comprising a hard coating disposed on the polymer film, the hard coating substantially covering the polymer film in its entirety.

9. The semiconductor device package of claim 1, wherein the end portion of the polymer film is embedded in the separator structure, and the separator structure includes a first through portion penetrating the polymer film.

10. The semiconductor device package of claim 9, wherein the separation structure further includes a second through-hole portion penetrating the polymer film, and the size of the second through-hole portion is different from the size of the first through-hole portion.

11. A semiconductor device package comprising: Substrate; A separation structure disposed on the substrate and defining a space for accommodating a semiconductor device; A polymer membrane, disposed above the separating structure, the polymer membrane being composed of a fluoropolymer; and A bonding layer is disposed between the separating structure and the polymer film. The width of the polymer film is substantially the same as the width of the partition structure, and a portion of the bonding layer extends into the space of the partition structure, wherein the polymer film and the bonding layer are transparent to peak wavelengths emitted by or configured to be received by the semiconductor device.

12. The semiconductor device package of claim 11, wherein the bonding layer substantially integrally covers the separator structure and is disposed between the separator structure and the polymer film, the polymer film having a thickness in the range of 25 μm to 100 μm and the bonding layer having a thickness in the range of 10 μm to 25 μm.

13. The semiconductor device package of claim 11, wherein the fluoropolymer of the polymer film is composed of perfluoroalkoxyalkane (PFA), the bonding layer is composed of silicone, and both the polymer film and the bonding layer have a transparency rating of at least 70% for the peak wavelength of visible light.

14. The semiconductor device package of claim 13, wherein the bonding layer is exposed in the space of the separation structure.

15. The semiconductor device package of claim 11, wherein the separator includes a first surface and a second surface angled to the first surface, and the bonding layer directly contacts the first surface and the second surface of the separator, and the polymer film substantially integrally covers the bonding layer.

16. The semiconductor device package of claim 11, wherein a portion of the bonding layer extends downward into the space of the partition structure to protrude toward the semiconductor device.

17. The semiconductor device package of claim 11, wherein the semiconductor device is configured to emit or receive light through the polymer film and the bonding layer.

18. A method for manufacturing a semiconductor device package, comprising: Set up a substrate; A separation structure is formed on the substrate, the separation structure comprising a plurality of spaces each configured to accommodate a semiconductor device; A bonding layer is formed on a first surface of a polymer film, wherein the polymer film is composed of a fluoropolymer; and The polymer film is adhered to the partition structure and covers the space via the bonding layer. The portion of the bonding layer extends into the space of the partition structure, and the polymer film and the bonding layer are transparent to the peak wavelength emitted by or configured to be received by the semiconductor device.

19. The method of claim 18, further comprising: After the polymer film is placed on the separator structure, a monomerization operation is performed to separate the substrate, the separator structure and the polymer film.

20. The method of claim 18, wherein: The fluoropolymer of the polymer film is composed of perfluoroalkoxyalkane (PFA), the bonding layer is composed of silicone, and both the polymer film and the bonding layer have a transparency rating of at least 70% for the peak wavelength of visible light.

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