Solid-state imaging device and electronic apparatus

Abstract

The present invention suppresses image quality deterioration. A solid-state imaging device of an embodiment includes a semiconductor substrate (131) including a light-receiving element; an on-chip lens (132) provided on a first surface of the semiconductor substrate; a resin layer (133) covering the on-chip lens; and a glass substrate (134) provided on the first surface side of the semiconductor substrate separately from the resin layer.

Description

Technical Field

[0001] This disclosure relates to solid-state imaging devices and electronic devices. Background Technology

[0002] Recently, in electronic devices such as mobile terminal devices equipped with cameras and digital cameras, the number of camera pixels has increased while the size and thickness of the camera have decreased. In order to reduce the size and thickness of the camera, solid-state imaging devices are usually constructed as chip-size packages (CSPs).

[0003] [List of cited references]

[0004] [Patent Literature]

[0005] [Patent Document 1]

[0006] JP 2004-207461A

[0007] [Patent Document 2]

[0008] JP 2008-270650A Summary of the Invention

[0009] [Technical Issues]

[0010] However, when a solid-state imaging device is constructed as a CSP type, flare phenomena occur due to the reflection and diffraction of light in the imaging device, resulting in image quality degradation.

[0011] Therefore, this disclosure proposes a solid-state imaging device and electronic device capable of suppressing image quality degradation.

[0012] [Technical solution to the problem]

[0013] To address the aforementioned problems, a solid-state imaging apparatus according to one aspect of this disclosure includes: a semiconductor substrate including a light-receiving element; an on-chip lens disposed on a first surface of the semiconductor substrate; a resin layer covering the on-chip lens; and a glass substrate disposed separately from the resin layer on the first surface side of the semiconductor substrate. Attached Figure Description

[0014] Figure 1 This is a block diagram illustrating a schematic configuration example of an electronic device equipped with a solid-state imaging device according to a first embodiment.

[0015] Figure 2 This is a block diagram illustrating a schematic configuration example of an image sensor according to the first embodiment.

[0016] Figure 3This is a circuit diagram illustrating a schematic configuration example of a unit pixel according to the first embodiment.

[0017] Figure 4 This is a diagram illustrating an example of a stacked structure of an image sensor according to a first embodiment.

[0018] Figure 5 This is a cross-sectional view showing a structural example of a typical CSP-type solid-state imaging device.

[0019] Figure 6 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to a first embodiment.

[0020] Figure 7 This is a process cross-sectional view (1) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0021] Figure 8 This is a process cross-sectional view (2) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0022] Figure 9 This is a process cross-sectional view (3) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0023] Figure 10 This is a process cross-sectional view (4) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0024] Figure 11 This is a process cross-sectional view (5) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0025] Figure 12 This is a process cross-sectional view (6) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0026] Figure 13 This is a process cross-sectional view (7) illustrating an example of a method for manufacturing an image sensor according to the first embodiment.

[0027] Figure 14 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to a variation of the first embodiment.

[0028] Figure 15 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the second embodiment.

[0029] Figure 16 It is shown Figure 15 A cross-sectional view of an example of a local cross-sectional structure of plane AA in the diagram.

[0030] Figure 17 This is a transmission diagram illustrating an example of the positional relationship between the air gap and the lens on the chip according to the second embodiment.

[0031] Figure 18 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a second embodiment.

[0032] Figure 19 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a modified embodiment of the second scheme.

[0033] Figure 20 This is a cross-sectional view showing an example of the cross-sectional structure of the resin layer according to the second embodiment.

[0034] Figure 21 This is a cross-sectional view illustrating a schematic configuration example of a glass substrate according to a first modified example of the second embodiment.

[0035] Figure 22 This is a transmission diagram illustrating an example of the correspondence between the air gap and the lens on the chip according to a second variation of the second embodiment.

[0036] Figure 23 This is a cross-sectional view illustrating a schematic configuration example of a glass substrate according to a third variation of the second embodiment.

[0037] Figure 24 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to a fourth variation of the second embodiment.

[0038] Figure 25 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to a third embodiment.

[0039] Figure 26 This is a process cross-sectional view (1) illustrating an example of a method for manufacturing an image sensor according to a third embodiment.

[0040] Figure 27 This is a process cross-sectional view (2) illustrating an example of a method for manufacturing an image sensor according to the third embodiment.

[0041] Figure 28 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the fourth embodiment.

[0042] Figure 29 This is a process cross-sectional view (1) illustrating an example of a method for manufacturing an image sensor according to the fourth embodiment.

[0043] Figure 30 This is a process cross-sectional view (2) illustrating an example of a method for manufacturing an image sensor according to the fourth embodiment.

[0044] Figure 31 This is a process cross-sectional view illustrating an example of the cross-sectional structure of an image sensor according to a variation of the fourth embodiment.

[0045] Figure 32 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the fifth embodiment.

[0046] Figure 33 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a fifth embodiment.

[0047] Figure 34 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the sixth embodiment.

[0048] Figure 35 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to the sixth embodiment.

[0049] Figure 36 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the seventh embodiment.

[0050] Figure 37 It is shown Figure 36 A top view showing the positional relationship between the lens and the support on the chip.

[0051] Figure 38 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor illustrated as a comparative example.

[0052] Figure 39 This is an enlarged view showing an example of a partial cross-sectional structure of an image sensor according to the seventh embodiment.

[0053] Figure 40 This is a process cross-sectional view (1) illustrating an example of a method for manufacturing an image sensor according to the seventh embodiment.

[0054] Figure 41 This is a process cross-sectional view (2) illustrating an example of a method for manufacturing an image sensor according to the seventh embodiment.

[0055] Figure 42 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the eighth embodiment.

[0056] Figure 43 It is shown Figure 42 A top view showing the positional relationship between the lens and the support on the chip.

[0057] Figure 44This is an enlarged view showing an example of a partial cross-sectional structure of an image sensor according to the eighth embodiment.

[0058] Figure 45 This is an enlarged view showing an example of another partial cross-sectional structure of the image sensor according to the eighth embodiment.

[0059] Figure 46 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the ninth embodiment.

[0060] Figure 47 It is shown Figure 46 A top view showing the positional relationship between the lens and the support on the chip.

[0061] Figure 48 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to a modified embodiment of the seventh to ninth embodiments.

[0062] Figure 49 This is a cross-sectional view illustrating an example of the cross-sectional structure of an image sensor according to another variation of the seventh to ninth embodiments.

[0063] Figure 50 This is a block diagram illustrating an example of the schematic configuration of a vehicle control system.

[0064] Figure 51 This is an explanatory diagram showing an example of the mounting positions of the vehicle exterior information detection unit and the imaging unit.

[0065] Figure 52 This is a diagram illustrating an example of the schematic configuration of an endoscopic surgical system.

[0066] Figure 53 This is a block diagram illustrating an example of the functional configuration of a camera head and a CCU. Detailed Implementation

[0067] In the following description, embodiments of the present disclosure will be illustrated in detail with reference to the accompanying drawings. Furthermore, in the following embodiments, the same reference numerals are used to refer to the same parts, and therefore repeated descriptions will be omitted.

[0068] In addition, the items disclosed herein will be described in the following order.

[0069] 1. First Implementation Plan

[0070] 1.1 Example of the composition of electronic devices

[0071] 1.2 Example of Solid-State Imaging Device Configuration

[0072] 1.3 Example of a unit pixel

[0073] 1.4 Examples of basic functions of a unit pixel

[0074] 1.5 Example of a stacked structure for a solid-state imaging device

[0075] 1.6 Solar Flare Phenomenon

[0076] 1.7 Examples of cross-sectional structures

[0077] 1.8 Manufacturing Method

[0078] 1.9 Functions and Effects

[0079] 1.10 Variation Example

[0080] 2. Second Implementation Plan

[0081] 2.1 Examples of cross-sectional structures

[0082] 2.2 Manufacturing Method

[0083] 2.2.1 Variations in the manufacturing method

[0084] 2.3 Lens function of the resin layer

[0085] 2.4 Pupil Correction

[0086] 2.5 Functions and Effects

[0087] 2.6 Examples of deformation of glass substrates

[0088] 2.6.1 First Variation Example

[0089] 2.6.2 Second Variation Example

[0090] 2.6.3 Third variation example

[0091] 2.6.4 Fourth Variation Example

[0092] 3. Third Implementation Plan

[0093] 3.1 Examples of cross-sectional structures

[0094] 3.2 Manufacturing Method

[0095] 3.3 Functions and Effects

[0096] 4. Fourth Implementation Plan

[0097] 4.1 Examples of cross-sectional structures

[0098] 4.2 Manufacturing Method

[0099] 4.2.1 Variations in manufacturing methods

[0100] 4.3 Functions and Effects

[0101] 5. Fifth Implementation Plan

[0102] 5.1 Examples of cross-sectional structures

[0103] 5.2 Manufacturing Method

[0104] 5.3 Functions and Effects

[0105] 6. Sixth Implementation Plan

[0106] 6.1 Examples of cross-sectional structures

[0107] 6.2 Manufacturing Method

[0108] 6.3 Functions and Effects

[0109] 7. Seventh Implementation Plan

[0110] 7.1 Examples of cross-sectional structures

[0111] 7.2 Manufacturing Method

[0112] 7.3 Functions and Effects

[0113] 8. Eighth Implementation Plan

[0114] 8.1 Examples of cross-sectional structures

[0115] 8.2 Functions and Effects

[0116] 9. Ninth Implementation Plan

[0117] 9.1 Examples of cross-sectional structures

[0118] 9.2 Functions and Effects

[0119] 10. Variations of the seventh to ninth implementation schemes

[0120] 11. Example 1 of the application of moving bodies

[0121] 12. Examples of the application of endoscopic surgical systems

[0122] 1. First Implementation Plan

[0123] First, the solid-state imaging apparatus and electronic device according to the first embodiment will be described in detail with reference to the accompanying drawings.

[0124] 1.1 Example of the composition of electronic devices

[0125] Figure 1 This is a block diagram illustrating a schematic configuration example of an electronic device equipped with a solid-state imaging device according to a first embodiment. Figure 1 As shown, the electronic device 1000 includes, for example, an imaging lens 1020, a solid-state imaging device 100, a storage unit 1030, and a processor 1040.

[0126] The imaging lens 1020 is an example of an optical system that converges incident light and images the converged light on the light-receiving surface of the solid-state imaging device 100. This light-receiving surface can be a surface in the solid-state imaging device 100 on which photoelectric conversion elements are arranged. The solid-state imaging device 100 performs photoelectric conversion on the incident light to generate image data. Furthermore, the solid-state imaging device 100 performs predetermined signal processing on the generated image data, such as noise removal and white balance adjustment.

[0127] The storage unit 1030 includes, for example, flash memory, DRAM (dynamic random access memory), and SRAM (static random access memory), and records image data input from the solid-state imaging device 100.

[0128] The processor 1040 is configured using, for example, a central processing unit (CPU), and may include an operating system, an application processor that executes various types of application software, a graphics processing unit (GPU), and a baseband processor. The processor 1040 performs various types of processing on image data input from the solid-state imaging device 100 and image data read from the storage unit 1030, displays the image data to the user, or transmits the image data to an external device via a predetermined network.

[0129] 1.2 Example of Solid-State Imaging Device Configuration

[0130] Figure 2 This is a block diagram illustrating a schematic configuration example of a CMOS (complementary metal-oxide-semiconductor) type solid-state imaging device (hereinafter referred to as an image sensor) according to a first embodiment. Here, the CMOS type image sensor is an image sensor manufactured by applying a CMOS process or partially using a CMOS process. The image sensor 100 according to the first embodiment can be a so-called back-illuminated type in which the incident surface is the surface of the semiconductor substrate opposite to the element formation surface (hereinafter referred to as the back surface), or it can be a so-called front-surface illuminated type in which the incident surface is the front surface.

[0131] like Figure 2As shown, the image sensor 100 includes, for example, a pixel array unit 101, a vertical drive circuit 102, a column processing circuit 103, a horizontal drive circuit 104, a system control unit 105, a signal processing unit 108, and a data storage unit 109. In the following description, the vertical drive circuit 102, column processing circuit 103, horizontal drive circuit 104, system control unit 105, signal processing unit 108, and data storage unit 109 are also referred to as peripheral circuits.

[0132] The pixel array unit 101 has the following configuration: unit pixels (hereinafter simply referred to as "pixels") 110, including photoelectric conversion elements, are arranged along the row and column directions, i.e., in a two-dimensional lattice form (hereinafter referred to as "matrix form"), wherein the photoelectric conversion elements generate and accumulate charge according to the amount of light received. Here, the row direction is the arrangement direction of pixels in a pixel row (the horizontal direction in the figure), and the column direction is the arrangement direction of pixels in a pixel column (the vertical direction in the figure). The specific circuit configuration and pixel structure of the unit pixel will be described in detail later.

[0133] In pixel array unit 101, for a matrix-like pixel arrangement, pixel driving lines LD are arranged along the row direction for each pixel row, and vertical signal lines VSL are arranged along the column direction for each pixel column. The pixel driving lines LD transmit driving signals that are executed when a signal is read from a pixel. Although in Figure 2 The pixel drive lines LD are shown as separate lines, but they are not limited to this. One end of each pixel drive line LD is connected to the output terminal of the vertical drive circuit 102 corresponding to a row.

[0134] The vertical drive circuit 102 includes a shift register and an address decoder, and drives each pixel of the pixel array unit 101 simultaneously or row by row. That is, the vertical drive circuit 102, together with the system control unit 105 that controls the vertical drive circuit 102, constitutes a drive unit that controls the operation of each pixel in the pixel array unit 101. Although a detailed illustration of the vertical drive circuit 102 is omitted, it typically includes two scanning systems: a readout scanning system and a scanout scanning system.

[0135] To read out the signal from the unit pixel, the readout scanning system sequentially selects and scans the unit pixels in the pixel array unit 101 row by row. The signal read out from the unit pixel is an analog signal. The scan-out scanning system performs a scan-out scan on the readout rows that were read out by the readout scanning system at a time point one exposure time before the readout scan.

[0136] By performing a sweep scan using a scanning system, unwanted charges are swept away from the photoelectric conversion elements of each pixel in the readout line, thereby resetting the photoelectric conversion elements. Then, the sweep scan system sweeps away (resets) the unwanted charges, thus performing what is known as electronic shutter operation. Here, electronic shutter operation is the process of expelling the charges from the photoelectric conversion elements and restarting exposure (initiating charge accumulation).

[0137] The signal read out by the readout operation of the readout scanning system corresponds to the amount of light received immediately after the preceding readout operation or electronic shutter operation. Furthermore, the time interval from the readout moment in the preceding readout operation or the scan moment in the electronic shutter operation to the readout moment in the current readout operation is the charge accumulation period per pixel (also known as the exposure period).

[0138] The signals output from each unit pixel in the pixel row selectively scanned by the vertical drive circuit 102 are input to the column processing circuit 103 through the vertical signal lines VSL of each pixel column. For each pixel column of the pixel array unit 101, the column processing circuit 103 performs predetermined signal processing on the signals output from each pixel in the selected row through the vertical signal lines VSL, and temporarily holds the pixel signals after signal processing.

[0139] Specifically, the column processing circuit 103 performs at least noise removal processing as signal processing, such as CDS (correlated double sampling) processing and DDS (double data sampling) processing. For example, CDS processing removes reset noise and pixel-specific fixed-pattern noise (e.g., threshold variations of amplifying transistors in a pixel). Additionally, the column processing circuit 103 includes, for example, an analog-to-digital (AD) conversion function to convert the analog pixel signal read from and obtained from the photoelectric conversion element into a digital signal and output the digital signal.

[0140] The horizontal drive circuit 104 includes a shift register and an address decoder, and sequentially selects readout circuits (hereinafter referred to as pixel circuits) corresponding to the pixel columns of the column processing circuit 103. Through this selective scanning performed by the horizontal drive circuit 104, the pixel signals processed by the column processing circuit 103 for each pixel circuit are sequentially output.

[0141] The system control unit 105 includes a timing generator for generating various timing signals, and performs drive control of the vertical drive circuit 102, column processing circuit 103, and horizontal drive circuit 104 based on the various timing signals generated by the timing generator.

[0142] The signal processing unit 108 has at least arithmetic operation processing capabilities and performs various types of signal processing, such as arithmetic operation processing, on the pixel signals output from the column processing circuit 103. The data storage unit 109 temporarily stores the data required for signal processing in the signal processing unit 108.

[0143] Furthermore, the image data output from the signal processing unit 108 may undergo predetermined processing performed in the processor 1040 of the electronic device 1000 equipped with the image sensor 100, or be sent to the outside via a predetermined network.

[0144] 1.3 Example of a unit pixel

[0145] Figure 3 This is a circuit diagram illustrating a schematic configuration example of a unit pixel according to the first embodiment. For example... Figure 3 As shown, the unit pixel 110 includes a photodiode PD, a transmission transistor 111, a reset transistor 112, an amplification transistor 113, a selection transistor 114, and a floating diffusion layer FD.

[0146] The select transistor drive line LD114 included in the pixel drive line LD is connected to the gate of the select transistor 114, the reset transistor drive line LD112 included in the pixel drive line LD is connected to the gate of the reset transistor 112, and the transfer transistor drive line LD111 included in the pixel drive line LD is connected to the gate of the transfer transistor 111. Additionally, the vertical signal line VSL, one end of which is connected to the column processing circuit 103, is connected to the drain of the amplification transistor 113 via the select transistor 114.

[0147] In the following description, reset transistor 112, amplification transistor 113, and selection transistor 114 are also collectively referred to as pixel circuitry. This pixel circuitry may include a floating diffusion layer FD and / or a transmission transistor 111.

[0148] A photodiode PD performs photoelectric conversion on incident light. A transmission transistor 111 transmits the charge generated in the photodiode PD. A floating diffusion layer FD accumulates the charge transmitted from the transmission transistor 111. An amplification transistor 113 causes a pixel signal with a voltage value corresponding to the charge accumulated in the floating diffusion layer FD to appear on the vertical signal line VSL. A reset transistor 112 discharges the charge accumulated in the floating diffusion layer FD. A selection transistor 114 selects the unit pixel 110 as the readout target.

[0149] The anode of the photodiode PD is grounded, and the cathode is connected to the source of the transmission transistor 111. The drain of the transmission transistor 111 is connected to the source of the reset transistor 112 and the gate of the amplification transistor 113, and the node serving as their connection point forms the floating diffusion layer FD. Furthermore, the drain of the reset transistor 112 is connected to a vertical reset input line (not shown).

[0150] The source of amplifying transistor 113 is connected to a vertical current supply line (not shown). The drain of amplifying transistor 113 is connected to the source of select transistor 114, and the drain of select transistor 114 is connected to the vertical signal line VSL.

[0151] The floating diffusion layer FD converts the accumulated charge into a voltage with a voltage value corresponding to the amount of charge. Furthermore, the floating diffusion layer FD can be, for example, a grounded capacitor. However, the floating diffusion layer FD is not limited to this, and the floating diffusion layer FD can be a capacitance increased by intentionally connecting capacitors or the like to the node where the drain of the transmission transistor 111, the source of the reset transistor 112, and the gate of the amplification transistor 113 are connected.

[0152] 1.4 Examples of basic functions of a unit pixel

[0153] Next, we will refer to Figure 3 The basic function of unit pixel 110 is explained. Reset transistor 112 controls the discharge (reset) of charge accumulated in the floating diffusion layer FD based on a reset signal RST provided from the vertical drive circuit 102 via reset transistor drive line LD112. Furthermore, when reset transistor 112 is in the on state, by switching transmission transistor 111 to the on state, in addition to discharging (resetting) the charge accumulated in the floating diffusion layer FD, the charge accumulated in the photodiode PD can also be discharged (reset).

[0154] When a high-level reset signal RST is input to the gate of the reset transistor 112, the floating diffuser layer FD is clamped to the voltage applied through the vertical reset input line. Therefore, the charge accumulated in the floating diffuser layer FD is discharged (reset).

[0155] In addition, when a low-level reset signal RST is input to the gate of the reset transistor 112, the floating diffusion layer FD is electrically disconnected from the vertical reset input line and enters a floating state.

[0156] The photodiode PD performs photoelectric conversion on incident light and generates a charge corresponding to the amount of light. The generated charge accumulates on the cathode side of the photodiode PD. The transfer transistor 111 controls the transfer of charge from the photodiode PD to the floating diffusion layer FD according to the transfer control signal TRG provided from the vertical drive circuit 102 through the transfer transistor drive line LD111.

[0157] For example, when a high-level transmission control signal TRG is input to the gate of the transmission transistor 111, the charge accumulated in the photodiode PD is transferred to the floating diffusion layer FD. On the other hand, when a low-level transmission control signal TRG is provided to the gate of the transmission transistor 111, the transfer of charge from the photodiode PD stops.

[0158] As described above, the floating diffusion layer FD has the function of converting the charge transferred from the photodiode PD through the transfer transistor 111 into a voltage with a voltage value corresponding to the amount of charge. Therefore, in the floating state where the reset transistor 112 is turned off, the potential of the floating diffusion layer FD is modulated in response to the amount of charge accumulated therein.

[0159] Amplifying transistor 113 is used as an amplifier, which takes the potential change of the floating diffusion layer FD connected to its gate as an input signal, and the output voltage signal of amplifying transistor 113 appears as a pixel signal on the vertical signal line VSL through selecting transistor 114.

[0160] The selection transistor 114 controls the appearance of the pixel signal via the amplification transistor 113 on the vertical signal line VSL according to the selection control signal SEL provided from the vertical drive circuit 102 via the selection transistor drive line LD114. For example, when a high-level selection control signal SEL is input to the gate of the selection transistor 114, the pixel signal via the amplification transistor 113 appears on the vertical signal line VSL. On the other hand, when a low-level selection control signal SEL is input to the gate of the selection transistor 114, the pixel signal stops appearing on the vertical signal line VSL. Therefore, in the vertical signal line VSL connected to multiple unit pixels 110, it is possible to extract only the output of the selected unit pixel 110.

[0161] 1.5 Example of a stacked structure for a solid-state imaging device

[0162] Figure 4 This is a diagram illustrating an example of a stacked structure of an image sensor according to a first embodiment. (See diagram for example.) Figure 4 As shown, the image sensor 100 has a stacked structure in which a light receiving chip 121 and a circuit chip 122 are vertically stacked. The light receiving chip 121 is, for example, a semiconductor chip including a pixel array unit 101 in which photodiodes (PDs) are disposed, and the circuit chip 122 is, for example, a semiconductor chip including... Figure 3 The pixel circuit shown and Figure 2 Semiconductor chips, such as those used in peripheral circuits.

[0163] To bond the light-receiving chip 121 and the circuit chip 122, for example, a so-called direct bonding method can be used, i.e., the bonding surfaces of the light-receiving chip 121 and the circuit chip 122 are planarized, and the chips are bonded together by inter-electro-force. However, the bonding method is not limited to this, and for example, a so-called Cu-Cu bonding method in which electrode pads made of copper (Cu) formed on the bonding surfaces are bonded together, as well as bump bonding, can be used.

[0164] Furthermore, the optical receiver chip 121 and the circuit chip 122 are electrically connected, for example, through a connection such as a through-silicon via (TSV) penetrating the semiconductor substrate. For connections using TSVs, for example, methods such as the so-called dual TSV method and the so-called shared TSV method can be employed. In the so-called dual TSV method, two TSVs (a TSV disposed in the optical receiver chip 121 and a TSV disposed from the optical receiver chip 121 to the circuit chip 122) are connected on the outer surface of the chip. In the so-called shared TSV method, a TSV penetrating from the optical receiver chip 121 to the circuit chip 122 is used to connect the two chips.

[0165] However, when Cu-Cu bonding or bump bonding is used for bonding the optical receiver chip 121 and the circuit chip 122, the chips are electrically connected through the Cu-Cu bonding portion or the bump bonding portion.

[0166] 1.6 Solar Flare Phenomenon

[0167] Here, we will explain the flare phenomenon that occurs in a typical CSP-type image sensor. Figure 5 This is a cross-sectional view illustrating an example of the structure of a typical CSP-type solid-state imaging device. (Example:) Figure 5 As shown, a typical CSP-type solid-state imaging device has the following structure: wherein, an adhesive 1003, such as resin, is used to bond the light-receiving surface of a semiconductor chip 1001, which includes light-receiving elements arranged in a matrix, and a glass substrate 1004 for protecting the light-receiving surface of the semiconductor chip 1001 to each other.

[0168] There are periodic structures near the light-receiving surface of the semiconductor chip 1001, such as on-chip lenses 1002 for each pixel and wiring for connecting circuit elements such as transistors in pixel circuits.

[0169] When periodic structures exist in this manner near the light-receiving surface of a semiconductor chip, the light reflected by these periodic structures undergoes diffraction. The higher-order components of the diffracted light exceed the critical angle determined by the refractive indices of the glass substrate 1004 and the atmosphere, and are incident on the interface between the glass substrate 1004 and the atmosphere. Therefore, the components exceeding the critical angle undergo total internal reflection from the upper surface of the glass substrate 1004 and are re-incident on the light-receiving surface, resulting in a flare phenomenon.

[0170] In particular, such as Figure 5 As shown, in the case of a so-called cavity-free structure in which an adhesive 1003, such as resin, is filled between a glass substrate 1004 and a semiconductor chip 1001, the image quality is significantly degraded because even low-order diffraction light exceeds the critical angle, resulting in high light intensity of the flare light caused by the diffraction light.

[0171] Therefore, in order to suppress image quality degradation caused by flare phenomena due to total internal reflection of diffracted light, this embodiment includes the following configuration.

[0172] 1.7 Examples of cross-sectional structures

[0173] Figure 6 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the first embodiment. Furthermore, although the image sensor 100 is illustrated as a back-illuminated type in this specification, as described above, the image sensor 100 may also be a front-illuminated type.

[0174] like Figure 6 As shown, the image sensor 100 includes: a semiconductor substrate 131, on which photodiodes PD and transmission transistors 111 in a plurality of unit pixels 110 are arranged in a matrix; and a second semiconductor substrate 136, on which the remaining circuit elements of the unit pixels 110 (see reference) Figure 3 ) and peripheral circuits (reference) Figure 2 The photodiodes (PDs) in the unit pixel 110 are disposed on the second semiconductor substrate 136. For example, the photodiodes (PDs) in the unit pixel 110 can be arranged in a matrix on the back side of the semiconductor substrate 131. Furthermore, the semiconductor substrate 131 can be, for example, a... Figure 4 The semiconductor substrate of the optical receiver chip 121, the semiconductor substrate 136, can be, for example, a semiconductor substrate 136. Figure 4 The semiconductor substrate of the circuit chip 122 in the middle.

[0175] A plurality of on-chip lenses 132, a glass substrate 134, and a resin layer 133 are disposed on the back side (upper surface side in the figure) of the semiconductor substrate 131. On the other hand, a passivation layer 139, a lead electrode 137, and a ball bump 138 are disposed on the back side (lower surface side in the figure) of the semiconductor substrate 136, which is bonded to the front surface side (lower surface side in the figure) of the semiconductor substrate 131.

[0176] For example, each on-chip lens 132 is positioned for a photodiode PD disposed on the back side of the semiconductor substrate 131. Therefore, the on-chip lenses 132 are arranged in a matrix on the back side of the semiconductor substrate 131. Each on-chip lens 132 has a curvature for converging incident light onto the light-receiving surface of its corresponding photodiode PD.

[0177] The glass substrate 134 is, for example, a component that protects the back side (corresponding to the light receiving surface) of the semiconductor substrate 131 and maintains the physical strength of the image sensor 100.

[0178] The resin layer 133 is an optically transparent epoxy resin, low-melting-point glass, or UV-curable resin, etc. Besides adhering the glass substrate 134 to the semiconductor substrate 131, the resin layer 133 also covers at least the effective pixel region 150 on the back side of the semiconductor substrate 131 using a material with a refractive index higher than that of vacuum or atmosphere, so that diffracted light reflected from the lens 132, etc., on the chip approaches the light-receiving surface of the semiconductor substrate 131 from its totally internally reflected surface. Furthermore, the effective pixel region 150 can be a rectangular region in which unit pixels 110 for generating image data are arranged.

[0179] At the same time, despite Figure 6 The details are omitted, but a wiring layer formed of an insulating film can be provided on the surfaces of the semiconductor substrates 131 and 136 that are bonded to each other. This wiring layer includes wiring for connecting the unit pixel 110 and peripheral circuitry. In this case, for example, the insulating film of the wiring layer can be a silicon oxide film (SiO2) or a silicon nitride film (SiN).

[0180] The passivation layer 139 is a film formed using materials such as photosensitive polyimide, polybenzoxazole (PBO) or silicone resin, and the passivation layer 139 is used to protect the back side (lower surface in the figure) of the semiconductor substrate 136 and the lead-out electrode 137.

[0181] The lead electrode 137 is formed using, for example, a conductive material (e.g., a metal), and the lead electrode 137 leads electrical connections to peripheral circuits, etc., disposed on the semiconductor substrate 136 to the back side of the semiconductor substrate 136.

[0182] Ball bumps 138 are, for example, solder balls provided at the exposed portion of lead electrodes 137, and ball bumps 138 are external terminals for electrically connecting image sensor 100 and circuit boards, etc. However, the structure of the external terminal is not limited to the structure using ball bumps 138, but may also employ structures such as flat pads.

[0183] Additionally, alignment marks 141 and 142 for alignment during bonding can be provided on the semiconductor substrate 131 and the glass substrate 134.

[0184] In the above-described configuration, the resin layer 133 is, for example, disposed on the back side of the semiconductor substrate 131 in a region that at least covers the effective pixel region 150. Here, as described above, when the resin layer 133 is used to adhere the semiconductor substrate 131 to the glass substrate 134, the resin layer 133 is also formed in the region surrounding the effective pixel region 150 on the back side of the semiconductor substrate 131. For example, the resin layer 133 is formed on the entire back side of the semiconductor substrate 131.

[0185] Furthermore, a trench 135 is provided on the surface of the glass substrate 134 opposite to the semiconductor substrate 131 in at least a region corresponding to the effective pixel region 150. According to this trench 135, a space (hereinafter referred to as an air gap) 151 is formed between the resin layer 133 and the glass substrate 134 in the substrate thickness direction of the semiconductor substrate 131 in at least a region corresponding to the effective pixel region 150. Moreover, the substrate thickness direction can be a direction perpendicular to the front and back surfaces of the semiconductor substrate 131.

[0186] The thickness of the air gap 151, i.e., the depth of the trench 135, can be 1 μm (micrometer), and can be equal to or less than half the maximum thickness of the glass substrate 134. For example, the depth of the trench 135 can be 1 μm, 5 μm, 10 μm, 100 μm, or the thickness of the glass substrate 134. In addition, the interior of the air gap 151 can be a vacuum, or it can be filled with a gas such as atmosphere, nitrogen, or argon (Ar).

[0187] In this manner, in this embodiment, the cross-sectional structure in the substrate thickness direction, at least within the effective pixel region 150, includes a resin layer 133, an air gap 151, and a glass substrate 134 sequentially formed from the semiconductor substrate 131 side. In other words, the air gap 151, with a refractive index lower than that of the resin layer 133, is located between the resin layer 133 and the glass substrate 134.

[0188] Because of the aforementioned stacked structure, the diffracted light reflected and diffracted from the periodic structures (such as the on-chip lens 132 and wiring) near the light-receiving surface of the semiconductor substrate 131 can become the interface between the resin layer 133 and the air gap 151 from its totally internalized surface. In other words, since the diffracted light can be brought closer to the light-receiving surface of the semiconductor substrate 131 from its totally internalized surface, the flight distance of the diffracted light in the direction parallel to the light-receiving surface can be reduced. Therefore, the occurrence of flare is reduced, thereby suppressing image quality degradation.

[0189] 1.8 Manufacturing Method

[0190] Next, the manufacturing method of the image sensor 100 according to the first embodiment will be described in detail with reference to the accompanying drawings. Figures 7 to 13 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a first embodiment.

[0191] In this manufacturing method, such as Figure 7 As shown, a semiconductor chip is manufactured having a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and on-chip lenses 132 for each unit pixel 110. Furthermore, electrode pads 137A, as part of lead-out electrodes 137, can be formed on the front surface side of the semiconductor substrate 136.

[0192] On the other hand, in the manufacturing process of the glass substrate 134, firstly, as Figure 8 As shown, a mask M1 with an opening A1 having the same shape as the opening of the trench 135 is formed on the main surface (assumed to be the back side) of the glass substrate 134A, which serves as the base of the glass substrate 134. The mask M1 may be, for example, a photoresist film formed by photolithography. In addition, an opening A2 for forming alignment marks 142 may be provided in the mask M1.

[0193] Next, as Figure 9 As shown, the back side of the glass substrate 134A on which the mask M1 is formed is etched to manufacture a glass substrate 134 in which trenches 135 and alignment marks 142 are formed. Dry etching or wet etching can be used to etch the glass substrate 134A. After forming the trenches 135 and alignment marks 142, the mask M1 is removed using a predetermined removal solution or the like.

[0194] Next, as Figure 10As shown, an uncured resin layer 133A is formed on the back side of the semiconductor substrate 131, and the resin layer 133A is cured while the glass substrate 134 is disposed on the resin layer 133A to bond the semiconductor substrate 131 and the glass substrate 134 together. In this bonding, alignment marks 141 provided in the semiconductor substrate 131 and alignment marks 142 provided in the glass substrate 134 are used to align the two substrates.

[0195] Furthermore, the uncured resin layer 133A can be in a gel state or a sheet state. Here, in order to suppress the sinking of the glass substrate 134 and improve the dimensional accuracy of the air gap 151, a high-viscosity material can be used for the resin layer 133A. However, when using the resin layer 133A in a low-viscosity gel state, excessive sinking of the glass substrate 134 can be prevented by inserting spacers around the effective pixel area 150.

[0196] Alternatively, the resin layer 133A can be cured using methods such as heating and ultraviolet radiation. Here, to suppress the sinking of the glass substrate 134 and improve the dimensional accuracy of the air gap 151, the curing process can be divided into two or more steps and performed. For example, the viscosity of the resin layer 133A can be increased during the first curing process, and the resin layer 133A can be fully cured in the second and subsequent processes.

[0197] Furthermore, although it is desirable not to apply weight to the glass substrate 134 when the resin layer 133A is cured, the glass substrate 134 may be pressed against the resin layer 133A or subjected to a force against the resin layer 133A as needed.

[0198] Next, as Figure 11 As shown, a mask M2 with an opening A3 is formed on the back side of the semiconductor substrate 136, which is bonded to the front surface of the semiconductor substrate 131, in a region corresponding to the electrode pad 137A in the substrate thickness direction of the semiconductor substrate 136. The semiconductor substrate 136 is etched through this mask M2 to form an opening A4 that penetrates the semiconductor substrate 136 and exposes the electrode pad 137A. Furthermore, the mask M2 can be, for example, a photoresist film formed by photolithography. Additionally, dry etching or wet etching can be used to etch the wiring layer 1036.

[0199] Next, as Figure 12 As shown, for example, a conductive layer that contacts the electrode pad 137A is formed on a portion of the back side of the semiconductor substrate 136 inside the opening A4 using a method such as peeling, in order to form the lead electrode 137.

[0200] Next, as Figure 13As shown, a passivation layer 139 with an opening A5 is formed, which exposes a portion of a lead-out electrode 137 formed on the back side of a semiconductor substrate 136. Ball bumps 138, such as solder balls, are then formed on the lead-out electrode 137 exposed through the opening A5. Therefore, a passivation layer 139 with such characteristics is manufactured. Figure 6 The image sensor 100 has the cross-sectional structure shown.

[0201] 1.9 Functions and Effects

[0202] As described above, in this embodiment, a vacuum or gas-filled air gap 151 is provided between the resin layer 133 and the glass substrate 134 above at least the effective pixel region 150. Therefore, diffracted light reflected and diffracted from the periodic structures (such as the on-chip lens 132 and wiring) near the light-receiving surface of the semiconductor substrate 131 can become the interface between the resin layer 133 and the air gap 151 from its totally internalized surface. In other words, the diffracted light can be brought closer to the light-receiving surface of the semiconductor substrate 131 from its totally internalized surface, thus reducing the flight distance of the diffracted light in the direction parallel to the light-receiving surface. Therefore, the occurrence of flare can be reduced, and image quality degradation can be suppressed.

[0203] 1.10 Variation Example

[0204] Figure 14 This is a cross-sectional view illustrating an example of the cross-sectional structure of an image sensor according to a modified embodiment of the first embodiment. Figure 14 In the image sensor 100A shown, the roughness of the bottom surface 143 of the trench 135 formed in the glass substrate 134 can be higher than the roughness of the other surface of the glass substrate 134 (e.g., the surface of the glass substrate 134 opposite to the semiconductor substrate 131). For example, since reflections occurring at the boundary between the glass substrate 134 and the air gap 151 can be reduced by forming protrusions and depressions such as moth-eye structures on the bottom surface 143, flare phenomena can be further reduced, and image quality degradation can be suppressed.

[0205] Meanwhile, the construction that increases the roughness of the bottom surface of the trench formed on the glass substrate is not limited to the first embodiment, and the construction can also be equally applied to other embodiments that will be described later.

[0206] 2. Second Implementation Plan

[0207] Next, the solid-state imaging apparatus and electronic device according to the second embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiment are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0208] In a second embodiment, in the electronic device 1000 according to the first embodiment, the image sensor 100 is replaced by an image sensor 200, which will be described later. The image sensor 200 has the same characteristics as when used... Figure 2 The image sensor 200 has the same functional configuration as the image sensor 100 described above. However, in this embodiment, the image sensor 200 has the cross-sectional structure illustrated in the following description.

[0209] 2.1 Examples of cross-sectional structures

[0210] Figure 15 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the second embodiment. Figure 16 It is shown Figure 15 A cross-sectional view of an example of a local cross-sectional structure of plane AA in the diagram. Figure 17 This is a transmission diagram illustrating an example of the positional relationship between the air gap and the lens on the chip according to the second embodiment. Furthermore, although the image sensor 200 is illustrated as a back-illuminated type in this disclosure, as in the first embodiment, the image sensor 200 can be either a back-illuminated type or a front-illuminated type.

[0211] like Figure 15 As shown, in the image sensor 200, in conjunction with the use of Figure 6 In the same configuration as the image sensor 100 described above, the glass substrate 134 is replaced by the glass substrate 234.

[0212] like Figure 15 and Figure 16 As shown, the glass substrate 234 has the features used in the first embodiment. Figure 6 The trench 135 described above is divided into a plurality of trenches 235 by a grid-like partition wall 201. That is, in this embodiment, the air gap 151 according to the first embodiment is divided into a plurality of air gaps 251 arranged in a matrix by the grid-like partition wall 201. Furthermore, the partition wall 201 may be a columnar or wall-like structure that supports the glass substrate 234 relative to the semiconductor substrate 131.

[0213] In addition, such as Figure 17 As shown, when the semiconductor substrate 131 is viewed from the thickness direction of the substrate, the plurality of trenches 235 (i.e., the plurality of air gaps 251) are arranged in a matrix, such that the optical center of the lens 132 on the chip corresponds one-to-one with the center of the air gap 251.

[0214] Here, in the grid-like partition wall 201, the row partition wall 201a extending in the row direction is provided along the boundary portion 211 of the on-chip lens 132 arranged in the column direction, and the column partition wall 201b extending in the column direction is provided along the boundary portion 212 of the on-chip lens 132 arranged in the row direction.

[0215] The boundary portions 211 and 212 of the on-chip lenses 132 arranged in a matrix correspond to the boundary portions of the photodiode PD. Therefore, by providing the separator wall 201 along the boundary portions 211 and 212, it is possible to reduce the amount of light incident on the photodiode PD through the on-chip lenses 132 that is blocked by the separator wall 201, thereby suppressing the reduction in quantum efficiency caused by the provision of the separator wall 201.

[0216] Furthermore, it is desirable that the width of the partition wall 201 be as narrow as possible within the range where the glass substrate 234 and the image sensor 200 achieve sufficient physical strength. Here, for example, when adjacent photodiodes PD are optically isolated by pixel isolation portions such as deep trench isolation (DTI) or front full trench isolation (FFTI), the width of the partition wall 201 can be greater than or less than the width of the pixel isolation portion.

[0217] 2.2 Manufacturing Method

[0218] Next, a method for manufacturing the image sensor 200 according to the second embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions will be omitted by referring to the same steps as in the method for manufacturing the image sensor 100 according to the first embodiment. Figure 18 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a second embodiment.

[0219] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0220] On the other hand, in this embodiment, during the manufacturing process of the glass substrate 234, firstly, a mask M21 with an opening A21 having the same shape as the opening of the trench 235 is formed on the main surface (assumed to be the back side) of the glass substrate 234A, which serves as the base of the glass substrate 234. The mask M21 may be, for example, a photosensitive resist film formed by photolithography. In addition, an opening A2 for forming alignment marks 142 may be formed in the mask M21.

[0221] Next, as Figure 18As shown, the back side of the glass substrate 234A on which the mask M21 is formed is etched to manufacture a glass substrate 234 in which trenches 235 and alignment marks 142 are formed. Dry etching or wet etching can be used to etch the glass substrate 234A. After forming the trenches 235 and alignment marks 142, the mask M21 is removed using a predetermined removal solution or the like.

[0222] Subsequently, according to the first implementation scheme... Figures 10 to 13 Using the same structure as described, a glass substrate 234 is bonded to a semiconductor substrate 131 using a resin layer 133, and then lead electrodes 137 and ball bumps 138 are formed, thereby creating a structure having the following characteristics: Figure 15 The image sensor 200 with the cross-sectional structure shown.

[0223] 2.2.1 Variations in the manufacturing method

[0224] Meanwhile, although, as illustrated in the first embodiment, this embodiment illustrates the formation of a resin layer 133A on the back side of the semiconductor substrate 131 where the on-chip lens 132 is formed, and the glass substrate 234 is bonded to the resin layer 133A (see reference). Figure 10 However, the surface on which the resin layer 133A is formed is not limited to the surface on the semiconductor substrate 131 side, and can be, for example, the surface on which the resin layer 133A is formed. Figure 19 The glass substrate 234 shown has a surface with grooves 235. However, when a resin layer 133A is formed on the surface of the glass substrate 234 with grooves 235, a sheet-like adhesive material can be used as the material for the resin layer 133A.

[0225] 2.3 Lens function of the resin layer

[0226] Figure 20 This is a cross-sectional view showing an example of the cross-sectional structure of the resin layer according to the second embodiment. As in this embodiment, when trenches 235 are formed one-to-one with the on-chip lens 132, the following situation exists: Figure 20 As shown, the resin layer 133, cured under the pressure of the grid-like partition walls 201, has a lens-like shape with a raised center within the area defined by the grooves 235. In this case, light incident on the resin layer 133 in each groove 235 through the glass substrate 234 is focused based on the curvature of the upper surface 202 of the resin layer 133.

[0227] For example, when a gel-like adhesive material or a sufficiently soft sheet-like adhesive material is used as the resin layer 133, the uncured resin layer 133 is pressed by the weight of the glass substrate 234 or by the applied force, thereby raising the center of each groove 235 like a lens.

[0228] In this case, the curvature of each on-chip lens 132 can be set by taking into account the curvature of the front surface of the resin layer 133, so that the converging light transmitted by the on-chip lens 132 is focused into the photodiode PD.

[0229] Furthermore, considering the weight of the glass substrate 234, the viscosity of the uncured resin layer 133, and the time and process required for curing, the curvature of the surface of the resin layer 133 can be obtained in advance.

[0230] 2.4 Pupil Correction

[0231] Furthermore, although the above description illustrates a case where air gaps 251 corresponding to each on-chip lens 132 are provided above the on-chip lens 132, pupil correction can be performed on the positional relationship between each on-chip lens 132 and each air gap 251 based on the image height. In this case, the position of the air gaps 251 relative to the on-chip lens 132 shifts towards the center of the effective pixel region 150 as they get closer to the outer periphery of the effective pixel region 150.

[0232] 2.5 Functions and Effects

[0233] As described above, according to this embodiment, since a partition wall 201 serving as a pillar supporting the glass substrate 234 relative to the semiconductor substrate 131 is provided between the glass substrate 234 and the semiconductor substrate 131, the strength of the image sensor 200 can be increased, and warping and the like can be suppressed.

[0234] Furthermore, since the blocking of light incident on the on-chip lens 132 by the partition wall 201 can be reduced by placing the partition wall 201 at the boundary portions 211 and / or 212 of the adjacent on-chip lens 132, the reduction in quantum efficiency caused by the placement of the partition wall 201 can also be suppressed.

[0235] Other structures, functions, and effects can be the same as those in the above-described embodiments, therefore detailed descriptions are omitted here.

[0236] 2.6 Examples of deformation of glass substrates

[0237] Next, several variations of the glass substrate 234 will be described.

[0238] 2.6.1 First Variation Example

[0239] Figure 21 This is a cross-sectional view showing a schematic configuration example of the glass substrate according to the first modified example. Furthermore, like... Figure 16 Same, Figure 21 It shows Figure 15 An example of a local cross-sectional structure of plane AA in the diagram.

[0240] like Figure 21 As shown, in glass substrate 234A, the rectangular groove 235 (i.e., air gap 251) in glass substrate 234 is replaced by a circular groove 235A (i.e., an air gap 251A with a circular shape on the surface parallel to the element forming surface).

[0241] Using these circular air gaps 251A, as in the second embodiment, can increase the strength of the glass substrate 234A and the image sensor 200 while suppressing image quality degradation caused by flare phenomena.

[0242] Furthermore, since the light incident on the on-chip lens 132 can be reduced from being blocked by the partition wall 201A by aligning the center of the air gap 251A with the center of the on-chip lens 132 in the substrate thickness direction of the semiconductor substrate 131, the reduction in quantum efficiency caused by the partition wall 201 can also be suppressed.

[0243] At the same time, the shape of the surface parallel to the forming surface of the element is not limited to a circle, and can be deformed in various ways, such as an ellipse and a polygon with three or more sides.

[0244] 2.6.2. Second variation

[0245] Figure 22 This is a transmission diagram illustrating an example of the correspondence between the air gap and the lens on the chip according to the second modified example.

[0246] Although the second embodiment described above illustrates a configuration in which row separator 201a and column separator 201b are arranged such that a trench 235 (i.e., air gap 251) corresponds to an on-chip lens 132, this embodiment is not limited to this configuration. For example, as Figure 22 As shown in the glass substrate 234B, the row partition wall 201a and column partition wall 201b can be configured such that one trench 235b corresponds to multiple ( Figure 22 There are a total of 4 on-chip lenses (2×2), in other words, the multiple on-chip lenses arranged in a matrix are divided into multiple ( Figure 22 The total number of 4 (2×2) chips is a group of 132 lenses.

[0247] By adopting this structure, as in the second embodiment, the strength of the glass substrate 234B and the image sensor 200 can be increased while suppressing image quality degradation caused by flare phenomena.

[0248] Meanwhile, the number of photodiodes PD divided by row partition wall 201a and column partition wall 201b is not limited to a total of 2×2 4, and can be m (m is an integer equal to or greater than 1)×n (n is an integer equal to or greater than 1).

[0249] 2.6.3 Third variation example

[0250] Figure 23 This is a cross-sectional view showing a schematic configuration example of the glass substrate according to the third modified example. Furthermore, Figure 23 It shows Figure 15 An example of a local cross-sectional structure of plane AA in the diagram.

[0251] like Figure 23 As shown, in order to maintain the strength of the image sensor 200, at least one partition wall 201 can be provided on the glass substrate 234C.

[0252] For example, by providing at least one partition wall 201 to divide the air gap 151 according to the first embodiment, as in the second embodiment, the image quality degradation caused by flare can be suppressed while increasing the strength of the glass substrate 234C and the image sensor 200.

[0253] 2.6.4 Fourth Variation Example

[0254] Figure 24 This is a cross-sectional view showing an example of the cross-sectional structure of the image sensor according to the fourth modified example. Furthermore, Figure 24 It shows the relationship with Figure 15 The cross section corresponding to the cross section shown.

[0255] like Figure 24 As shown in the image sensor 200D, a resin layer 233 can be used to form a partition wall 201D that supports the glass substrate 234D relative to the semiconductor substrate 131.

[0256] By adopting this structure, as in the second embodiment, the image quality degradation caused by flare can be suppressed while increasing the strength of the glass substrate 234D and the image sensor 200.

[0257] Furthermore, the partition wall 201D using resin layer 233 (where the upper layer (glass substrate 234D side) and the lower layer (semiconductor substrate 131 side) of resin layer 233 use different resin layers) can be formed, for example, by exposing the upper layer of the resin layer as a pattern with the same shape as the opening pattern of trench 235 and curing the exposed upper layer.

[0258] 3. Third Implementation Plan

[0259] Next, the solid-state imaging apparatus and electronic device according to the third embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as described above are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0260] In the third embodiment, in the electronic device 1000 according to the first embodiment, the image sensor 100 is replaced by an image sensor 300, which will be described later. The image sensor 300, for example, has the same characteristics as used in the first embodiment. Figure 2 The image sensor 300 has the same functional configuration as the image sensor 100 described above. However, in this embodiment, the image sensor 300 has a cross-sectional structure as illustrated in the following description.

[0261] 3.1 Examples of cross-sectional structures

[0262] Figure 25 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the third embodiment. Furthermore, although the image sensor 300 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 300 can be either a back-illuminated type or a front-illuminated type.

[0263] like Figure 25 As shown, in the second embodiment, using Figure 15 In the same configuration as the image sensor 200 described above, the image sensor 300 includes a light-shielding film 301 disposed on the surface of the glass substrate 234 that is in contact with the resin layer 133.

[0264] As a material for the light-shielding film 301, for example, a material with visible light shading properties can be used, such as tungsten (W), titanium (Ti), or carbon resist.

[0265] Additionally, as described in the second embodiment, the partition wall 201 in this embodiment is provided at the boundary portions 211 and 212 of the lens 132 on adjacent chips.

[0266] By employing this structure, light leakage incident on the air gap 251 corresponding to a certain unit pixel 110 can be reduced to the on-chip lens 132 corresponding to the adjacent unit pixel 110, i.e., light leakage into adjacent pixels. Therefore, the pixel isolation characteristics of the image sensor 300 can be improved to reduce color mixing, thereby suppressing image quality degradation.

[0267] 3.2 Manufacturing Method

[0268] Next, a method for manufacturing the image sensor 300 according to the third embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions are omitted by referring to the same steps in the manufacturing method of the image sensor 100 or 200 according to the first or second embodiment. Figure 26 and Figure 27 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a third embodiment.

[0269] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0270] On the other hand, in this embodiment, during the manufacturing process of the glass substrate 234, firstly, as... Figure 26 As shown, a light-shielding film 301A is formed on the main surface (assumed to be the back side) of the glass substrate 234A, which serves as the base of the glass substrate 234.

[0271] Next, a mask M21 is formed on the light-shielding film 301A, the mask M21 having an opening A21 with the same shape as the opening of the trench 235. This can be achieved by using [the mask] in the second embodiment. Figure 18 The same process described is used to form mask M21.

[0272] Next, as Figure 27 As shown, the back side of the glass substrate 234A, on which the mask M21 is formed, is etched to create a glass substrate 234 including trenches 235 and alignment marks 142, and a light-shielding film 301 is formed at least on the bottom surface of the partition wall 201. This can be achieved by using [the method described in the second embodiment]. Figure 18 The glass substrate 234A is etched using the same process described. Additionally, after forming the trench 235, alignment marks 142, and light-shielding film 301, the mask M21 is removed using a predetermined removal solution or the like.

[0273] Subsequently, according to the first implementation scheme... Figures 10 to 13 Using the same structure as described, a glass substrate 234 is bonded to a semiconductor substrate 131 using a resin layer 133, and then lead electrodes 137 and ball bumps 138 are formed, thereby creating a structure having the following characteristics: Figure 25 The image sensor 300 has the cross-sectional structure shown.

[0274] 3.3 Functions and Effects

[0275] As described above, according to the third embodiment, a light-shielding film 301 is provided on the bottom surface of the partition wall 201 in at least the effective pixel area 150. Therefore, light leakage incident on the air gap 251 corresponding to a certain unit pixel 110 into the on-chip lens 132 corresponding to the adjacent unit pixel 110 can be reduced, i.e., light leakage into adjacent pixels. Therefore, the pixel isolation characteristics of the image sensor 300 can be improved to reduce color mixing, thereby suppressing image quality degradation.

[0276] Furthermore, although this embodiment illustrates a case based on the image sensor 200 according to the second embodiment, the underlying embodiment is not limited to the second embodiment, and the basis may be other embodiments or variations thereof, such as variations of the second embodiment and the first embodiment.

[0277] In addition, other structures, functions and effects can be the same as those in the above-described embodiments, so detailed descriptions are omitted here.

[0278] 4. Fourth Implementation Plan

[0279] Next, the solid-state imaging apparatus and electronic device according to the fourth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0280] In the fourth embodiment, in the electronic device 1000 according to the first embodiment, the image sensor 100 is replaced by an image sensor 400, which will be described later. The image sensor 400, for example, has the same characteristics as used in the first embodiment. Figure 2 The image sensor 400 has the same functional configuration as the image sensor 100 described above. However, in this embodiment, the image sensor 400 has a cross-sectional structure as illustrated in the following description.

[0281] 4.1 Examples of cross-sectional structures

[0282] Figure 28 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the fourth embodiment. Furthermore, although the image sensor 400 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 400 can be either a back-illuminated type or a front-illuminated type.

[0283] like Figure 28 As shown, in the third embodiment, the use Figure 25 In the same configuration as the image sensor 300 described above, the image sensor 400 includes a light-shielding film 401, which is disposed not only on the bottom surface of the partition wall 201 in the glass substrate 234, but also on the side surface of the partition wall 201.

[0284] As the material for the light-shielding film 401, like the light-shielding film 301 according to the third embodiment, for example, a material with visible light shading properties, such as tungsten (W), titanium (Ti) or carbon resist, can be used.

[0285] Additionally, as described in the second embodiment, the partition wall 201 in this embodiment is provided at the boundary portions 211 and 212 of the lens 132 on adjacent chips.

[0286] By employing this configuration, light leakage into adjacent pixels can be further reduced. Therefore, since the pixel isolation characteristics of the image sensor 400 can be further improved to further reduce color mixing, image quality degradation can be further suppressed.

[0287] 4.2 Manufacturing Method

[0288] Next, the manufacturing method of the image sensor 400 according to the fourth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions are omitted by referring to the same steps in the manufacturing methods of the image sensors 100, 100A, 200, 200D, or 300 according to the above embodiments. Figure 29 and Figure 30 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to the fourth embodiment.

[0289] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0290] On the other hand, during the manufacturing process of the glass substrate 234, by using in the second embodiment... Figure 18 The glass substrate 234 is formed using the same process described above, and a groove 235 is formed in the back side of the glass substrate 234.

[0291] Next, as Figure 29 As shown, for example, a light-shielding film 401A of tungsten (W) or the like is formed on the surface of the glass substrate 234 where the trench 235 is formed, using a film deposition technique such as sputtering or CVD (chemical vapor deposition). Here, the light-shielding film 401A is also formed on the side surface of the trench 235 (i.e., the side surface of the partition wall 201) and the bottom surface.

[0292] Next, the entire surface of the glass substrate 234 on which the light-shielding film 401A is formed is etched to remove the light-shielding film 401A formed on the bottom surface of the trench 235, and a light-shielding film 401 is formed on the upper surface and side surface of the partition wall 201. Here, the light-shielding film 401 on the upper surface of the partition wall 201 can be made thinner.

[0293] Subsequently, according to the first implementation scheme... Figures 10 to 13 Using the same structure as described, a glass substrate 234 is bonded to a semiconductor substrate 131 using a resin layer 133, and then lead electrodes 137 and ball bumps 138 are formed, thereby creating a structure having the following characteristics: Figure 28 The image sensor 400 has the cross-sectional structure shown.

[0294] 4.2.1 Variations in manufacturing methods

[0295] Furthermore, although the above example illustrates the process of fabricating the light-shielding film 401A into the light-shielding film 401 through full-area etching, this disclosure is not limited to this technology, and as such... Figure 31 As shown, for example, by forming a mask M41 with an opening shape A41 identical to the opening of the cavity of the light-shielding film 401A on the upper and side surfaces of the partition wall 201, and in this state removing the light-shielding film 401A on the bottom surface of the trench 235 by means of reactive ion etching (RIE), the light-shielding film 401A can be processed into a light-shielding film 401. Meanwhile, the mask M41 can be formed using techniques such as photolithography.

[0296] 4.3 Functions and Effects

[0297] As described above, according to the fourth embodiment, a light-shielding film 401 is provided on at least the bottom and side surfaces of the partition wall 201 in the effective pixel region 150. Therefore, light leakage into adjacent pixels can be further reduced, thereby further improving the pixel isolation characteristics of the image sensor 400 to further reduce color mixing. Thus, image quality degradation can be further suppressed.

[0298] Furthermore, although the embodiment illustrated here is based on the image sensor 300 according to the third embodiment, the underlying embodiment is not limited to the third embodiment, and the basis may be other embodiments or variations thereof, such as variations of the third embodiment and the first or second embodiment.

[0299] In addition, other structures, functions and effects can be the same as those in the above-described embodiments, so detailed descriptions are omitted here.

[0300] 5. Fifth Implementation Plan

[0301] Next, the solid-state imaging apparatus and electronic device according to the fifth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0302] In the fifth embodiment, in the electronic device 1000 according to the first embodiment, the image sensor 100 is replaced by an image sensor 500, which will be described later. The image sensor 500, for example, has the same characteristics as used in the first embodiment. Figure 2 The image sensor 500 has the same functional configuration as the image sensor 100 described above. However, in this embodiment, the image sensor 500 has a cross-sectional structure as illustrated in the following description.

[0303] 5.1 Examples of cross-sectional structures

[0304] Figure 32 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the fifth embodiment. Furthermore, although the image sensor 500 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 500 can be either a back-illuminated type or a front-illuminated type.

[0305] like Figure 32 As shown, in the fourth embodiment, the use Figure 28 In the same configuration as the image sensor 400 described above, the image sensor 500 includes an anti-reflective film 501 disposed on the surface of the glass substrate 234 opposite to the surface on which the grooves 235 are formed.

[0306] The antireflective film 501 can be, for example, various antireflective films that transmit at least visible light with high efficiency, such as dielectric multilayer films in which silicon oxide films (SiO2 films) and titanium nitride films (TiN) are alternately stacked.

[0307] By providing an anti-reflective film 501 on the upper surface of the glass substrate 234, which serves as the light incident surface, in this manner, the light reflected from the upper surface of the glass substrate 234 can be reduced to improve incident efficiency. Therefore, the amount of light incident on the photodiode PD of each unit pixel 110 can be increased to improve contrast, thereby further suppressing image quality degradation.

[0308] 5.2 Manufacturing Method

[0309] Next, the manufacturing method of the image sensor 500 according to the fifth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions are omitted by referring to the same steps in the manufacturing methods of the image sensors 100, 100A, 200, 200D, 300, or 400 according to the above embodiments. Figure 33This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to a fifth embodiment.

[0310] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0311] On the other hand, in the manufacturing process of glass substrate 234, firstly, as Figure 33 As shown, an anti-reflective film 501 is formed on the upper surface of the glass substrate 234A (the surface opposite to the surface where the groove 235 is formed). Conventional film deposition techniques can be used to form the anti-reflective film 501.

[0312] Next, by using the second implementation scheme Figure 18 The same process described above is used to manufacture a glass substrate 234 on which a groove 235 is formed on its back side. Then, a light-shielding film 401 is formed on the side surface of the groove 235 (i.e., the side surface of the partition wall 201) and the bottom surface.

[0313] Subsequently, according to the first implementation scheme... Figures 10 to 13 Using the same structure as described, a glass substrate 234 is bonded to a semiconductor substrate 131 using a resin layer 133, and then lead electrodes 137 and ball bumps 138 are formed, thereby creating a structure having the following characteristics: Figure 32 The image sensor 500 has the cross-sectional structure shown.

[0314] 5.3 Functions and Effects

[0315] As described above, according to the fifth embodiment, an anti-reflection film 501 is provided on the upper surface of the glass substrate 234, which serves as the light incident surface. Therefore, since the light reflected from the upper surface of the glass substrate 234 can be reduced to improve incident efficiency, the amount of light incident on the photodiode PD of each unit pixel 110 can be increased to improve contrast. Thus, image quality degradation can be further suppressed.

[0316] Furthermore, although this embodiment illustrates a case based on an image sensor 400 according to the fourth embodiment, the underlying embodiment is not limited to the fourth embodiment, and the basis may be other embodiments or variations thereof, such as variations of the fourth embodiment and the first, second or third embodiments.

[0317] In addition, other structures, functions and effects can be the same as those in the above-described embodiments, so detailed descriptions are omitted here.

[0318] 6. Sixth Implementation Plan

[0319] Although the fifth embodiment illustrates a case in which an anti-reflective film 501 composed of a dielectric multilayer film or the like is provided on the upper surface of the glass substrate 234, the film provided on the upper surface of the glass substrate 234 is not limited to the anti-reflective film 501, and can be deformed in various ways.

[0320] Therefore, in the sixth embodiment, the case in which a color filter for blocking infrared light (hereinafter referred to as an IR cutoff filter) is used instead of the antireflective film 501 as a film disposed on the upper surface of the glass substrate 234 will be illustrated.

[0321] Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0322] 6.1 Examples of cross-sectional structures

[0323] Figure 34 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the sixth embodiment. Furthermore, although the image sensor 600 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 600 can be either a back-illuminated type or a front-illuminated type.

[0324] like Figure 34 As shown, in the fourth embodiment, the use Figure 28 In the same configuration as the image sensor 400 described above, the image sensor 600 includes an IR cutoff filter 601 disposed on the surface of the glass substrate 234 opposite to the surface on which the groove 235 is formed.

[0325] The IR cutoff filter 601 may be, for example, a film formed using a material that has a high absorption rate for infrared or near-infrared light.

[0326] By providing an IR cutoff filter 601 on the upper surface of the glass substrate 234, which serves as the light incident surface, in this manner, noise caused by the incident infrared light can be reduced, thereby further suppressing image quality degradation.

[0327] 6.2 Manufacturing Method

[0328] Next, the manufacturing method of the image sensor 600 according to the sixth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions are omitted by referring to the same steps in the manufacturing methods of the image sensors 100, 100A, 200, 200D, 300, 400, or 500 according to the above embodiments. Figure 35 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to the sixth embodiment.

[0329] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0330] On the other hand, during the manufacturing process of the glass substrate 234, such as Figure 35 As shown, firstly, an IR cutoff filter 601 is formed on the upper surface of the glass substrate 234A (the surface opposite to the surface where the trench 235 is formed). Conventional film deposition techniques can be used to form the IR cutoff filter 601.

[0331] Next, by using the second implementation scheme Figure 18 The same process described above is used to manufacture a glass substrate 234 on which a groove 235 is formed on its back side. Then, a light-shielding film 401 is formed on the side surface of the groove 235 (i.e., the side surface of the partition wall 201) and the bottom surface.

[0332] Subsequently, according to the first implementation scheme... Figures 10 to 13 Using the same structure as described, a glass substrate 234 is bonded to a semiconductor substrate 131 using a resin layer 133, and then lead electrodes 137 and ball bumps 138 are formed, thereby creating a structure having the following characteristics: Figure 34 The image sensor 600 has the cross-sectional structure shown.

[0333] 6.3 Functions and Effects

[0334] As described above, according to the sixth embodiment, an IR cutoff filter 601 is provided on the upper surface of the glass substrate 234, which serves as the light incident surface. Therefore, noise caused by the incident infrared light can be reduced, thereby further suppressing image quality degradation.

[0335] Furthermore, although this embodiment illustrates a case based on an image sensor 400 according to the fourth embodiment, the underlying embodiment is not limited to the fourth embodiment, and the basis may be other embodiments or variations thereof, such as variations of the fourth embodiment and the first, second, third or fifth embodiments.

[0336] In addition, other structures, functions and effects can be the same as those in the above-described embodiments, so detailed descriptions are omitted here.

[0337] 7. Seventh Implementation Plan

[0338] Next, the solid-state imaging apparatus and electronic device according to the seventh embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0339] In the above embodiment, by providing a resin layer 133 as a planarization film on the on-chip lens 132 and providing a gap (air gap 151) between the resin layer 133 and the glass substrate 134, flare phenomena caused by reflection from the upper surface of the glass substrate 134 are suppressed (see reference). Figure 5 Image quality degradation can result from the occurrence of flares. However, in such a configuration, since reflections still occur from the upper surface of the resin layer 133, weak flares may occur, leading to image quality degradation.

[0340] Furthermore, in recent image sensors with increased pixel counts and high image quality, the chip size has increased due to the increased pixel count. Therefore, in order to suppress warping and damage by improving the rigidity of the image sensor, it is desirable to use structures such as partitions or pillars to support the image sensor chip relative to the glass substrate.

[0341] However, if the structure used to support the image sensor chip is too large, the light reflected from the structure will be incident on different pixels than the pixels where the light should be incident, and the image quality may be degraded due to color mixing between pixels.

[0342] Therefore, this embodiment adopts the following structure: in a structure in which an air gap is provided between the image sensor chip and the glass substrate, the image sensor chip is supported relative to the glass substrate by multiple micropillars. Here, by adopting a structure in which the lens on the chip is not covered by a resin layer or the like, reflections from the resin layer or the like can be removed, thus further reducing the occurrence of flare and suppressing image quality degradation.

[0343] Furthermore, the miniature support pillars that support the image sensor chip can be, for example, structures that are extremely thin compared to the pixel size (i.e., the size of the light-receiving surface of each photodiode PD). By using pillars that are extremely thin compared to the pixel size, reflections from the sides of the pillars can be reduced, thereby suppressing image quality degradation due to color mixing.

[0344] Furthermore, by providing multiple pillars to support the glass substrate for each unit pixel 110, the rigidity of the image sensor can be improved, thereby suppressing warping and damage to the image sensor chip on which light-receiving elements and logic circuits are mounted.

[0345] Furthermore, by using pillars that support the image sensor chip as microstructures to reduce the impact of pillar shape inhomogeneity on image quality, the required shape precision (regularity) of the pillars is reduced, making it easier to manufacture the pillars.

[0346] 7.1 Examples of cross-sectional structures

[0347] Figure 36 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the seventh embodiment. Figure 37 It is shown Figure 36 A top view showing the positional relationship between the lens and the pillar on the chip. Furthermore, although the image sensor 700 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 700 can be either a back-illuminated type or a front-illuminated type.

[0348] like Figure 36 and Figure 37 As shown, the image sensor 700 has the following structure: [In the first embodiment, it is used...] Figure 6 In the same configuration as the image sensor 100 described above, a plurality of micropillars 701 are provided within the air gap 151 between the semiconductor substrate 131 and the glass substrate 134 to support the semiconductor substrate 131 (or the on-chip lens 132) relative to the glass substrate 134. Meanwhile, in Figure 36 In the first embodiment, although the glass substrate 134 is provided with grooves 135 (see reference 134) Figure 6 For example, it can be replaced by a glass substrate 734 as a transparent parallel plate and a sealing portion 735 provided along the edge of the glass substrate 734 and the semiconductor substrate 131. However, this embodiment is not limited to this, and this embodiment may have the same structure as the above embodiment.

[0349] like Figure 37 As shown, in this embodiment, multiple ( ) are set for one pixel (e.g., one on-chip lens 132). Figure 37 (5 pillars) 701.

[0350] The cross-sectional shape of each support 701 can be circular (including elliptical); a polygon with three, four, or more sides; or other shapes. Additionally, each support 701 can be: a column with a generally uniform cross-sectional width from top to bottom, a cone with a cross-sectional width gradually increasing from top to bottom, or an inverted cone with a cross-sectional width gradually decreasing from top to bottom. Furthermore, multiple supports 701 can be randomly or regularly arranged.

[0351] Here, the cross-sectional area (hereinafter referred to as diameter) and number (hereinafter referred to as density) of the struts 701 desired in improving the stiffness of the image sensor 700 are explained.

[0352] Figure 38 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor shown as a comparative example. Figure 38 In the image sensor 799 shown, in relation to Figure 36 The image sensor 700 shown has the same construction, except that the support column 701 is omitted.

[0353] exist Figure 38 In the diagram, L1 is the length of the air gap 151, T1 is the substrate thickness of the stacked substrate composed of semiconductor substrates 131 and 136, δ1 is the displacement of the stacked substrate in the substrate thickness direction, and W is the stress applied to the stacked substrate.

[0354] For example, in the calculation formula for the fixed end beam expressed by equation (1), the displacement δ1 varies with the fourth power of the length L1 of the air gap 151. Therefore, if the length L1 is doubled, the displacement δ1 increases by 16 times, and the position of the photodiodes PD between pixels changes significantly, resulting in increased optical effects and degraded image quality. In addition, due to the increase in displacement δ1, the semiconductor substrates 131 and 136 may also be damaged, resulting in damage such as cracks. Furthermore, in equation (1), E is Young's modulus, and I is the second moment of section.

[0355] [Mathematical Expression 1]

[0356]

[0357] Meanwhile, as in this embodiment, by providing multiple micropillars 701 on the on-chip lens 132 of each unit pixel 110, and by providing an air gap 151 between the unit pixel 110 and the glass substrate 734 to prevent flare, the displacement δ2 of the stacked substrate can be reduced.

[0358] For example, in an image sensor 700 with an air gap 151 length L1 of 10 mm and a pixel pitch (distance between individual pixels 110) of 1.5 μm, when... Figure 37 When each pixel is provided with 5 pillars 701, for example, the distance L2 between the pillars 701 can be set to 0.5 μm. In this case, according to the above equation (1), the displacement δ2 of the stacked substrate in the image sensor 700 relative to the displacement δ1 of the stacked substrate in the image sensor 799 is δ2 / δ1 = 0.5 μm. 4 / 10000 4 =6.25×10 -18 This value can be ignored.

[0359] Furthermore, since each pillar 701 is a miniature structure, flare phenomena caused by light reflection from the sides of the pillar 701 can be sufficiently reduced, for example, compared to the case where a partition wall 201 is used as in the second embodiment.

[0360] In addition, such as Figure 39 As shown, by making the distance Z2 from the semiconductor substrate 131 to the glass substrate 734 shorter than, for example, the size of a pixel (e.g., the size of each unit pixel 110 or each photodiode PD in the element forming surface direction) (e.g., 1 or less), the incident destination of the reflected light reduced by the micro pillar 701 can be fixed on the pixel where the light should be incident or its adjacent pixel, thereby suppressing the effect of color mixing to further suppress image quality degradation.

[0361] Meanwhile, the diameter of the support 701 can be determined based on the compressive and tensile strength of the material used for the support 701. For example, for a stress W of 1 to 3 MPa, when the support 701 is made of a resin material such as acrylic resin, each support 701 obtains a tensile strength of approximately 45 MPa to 70 MPa under compression and tension. For example, when the stress W = 3 MPa and the tensile strength per unit area σ = 50 MPa, the ratio of the area of ​​the support 701 to the area of ​​each unit pixel 110 becomes W / σ = 3 / 50, thus the area of ​​the support 701 can be reduced to approximately 0.06.

[0362] Therefore, when the pixel size is set to 1.5μm and each pixel has 5 pillars 701 (reference) Figure 38 When this is done, the diameter of each support 701 can be set to 0.18 μm. Since the size of the support 701 can be set to about 1 / 10 of the pixel size (1.5 μm) in this way, the reflectivity on the side of the support 701 can be significantly reduced.

[0363] Furthermore, since the size of the pillar 701 is much smaller than the size of the unit pixel 110, slight positional shifts and shape changes in the pillar 701 reduce the optical effect. On the other hand, if the diameter and spacing of the pillars 701 are kept within a certain range, the process precision required to form the pillars 701 can be reduced because the strength supporting the image sensor chip relative to the glass substrate 734 can be maintained, thereby making it relatively easy to manufacture the pillars 701 and the image sensor 700.

[0364] 7.2 Manufacturing Method

[0365] Next, a method for manufacturing an image sensor 700 according to the seventh embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, repeated descriptions will be omitted by referring to the same steps in the method for manufacturing an image sensor according to the above embodiment. Figure 40 and Figure 41 This is a process cross-sectional view illustrating an example of a method for manufacturing an image sensor according to the seventh embodiment.

[0366] In this manufacturing method, firstly, by using in the first embodiment... Figure 7 The semiconductor chip is manufactured using the same process described above. The semiconductor chip has a semiconductor substrate 131 including a plurality of photodiodes PD and transmission transistors 111 arranged in a matrix, a semiconductor substrate 136 including other circuit elements and peripheral circuits in unit pixels 110, and an on-chip lens 132 for each unit pixel 110.

[0367] Next, in this embodiment, for example, a photosensitive transparent resin is coated onto the semiconductor substrate 131 on which the on-chip lens 132 is disposed by spin coating. Subsequently, as Figure 40 As shown, the support column 701 and the sealing part 735 are formed by transferring the pattern of the support column 701 and the sealing part 735 onto the resin layer and then semi-curing the resin layer.

[0368] Next, as Figure 41 As shown, the glass substrate 734 is mounted onto the semi-cured support 701 and sealing portion 735, and the glass substrate 734 is heated while it is pressed against the support 701 and sealing portion 735, thereby bonding the glass substrate 734 to the support 701 and sealing portion 735.

[0369] Subsequently, according to the first implementation scheme... Figures 11 to 13 The same structure as described above forms the lead electrode 137 and the ball bump 138, thereby manufacturing an electrode with the following characteristics: Figure 36 The image sensor 700 has the cross-sectional structure shown.

[0370] 7.3 Functions and Effects

[0371] As described above, in this embodiment, in a structure where an air gap is provided between the image sensor chip and the glass substrate 734, the image sensor chip is supported relative to the glass substrate 734 by a plurality of micropillars 701. Here, by employing a structure in which the on-chip lens 132 is not covered by a resin layer or the like, reflections on the resin layer or the like can be removed, thereby reducing the occurrence of flare and suppressing image quality degradation.

[0372] In addition, since a structure that is quite thin compared to the pixel size is used as the miniature pillar 701 supporting the image sensor chip, reflections on the sides of the pillar 701 are reduced, thereby suppressing image quality degradation caused by color mixing.

[0373] Furthermore, by using multiple pillars 701 provided for each unit pixel 110 to support the glass substrate, the rigidity of the image sensor 700 is improved, thus preventing warping and damage to the image sensor chip in which light receiving elements and logic circuits are disposed.

[0374] Furthermore, since the impact of non-uniformity in the shape of the pillar 701 supporting the image sensor chip is reduced by forming it into a microstructure, the required shape precision (regularity) of the pillar is alleviated, making it easier to manufacture the pillar.

[0375] Furthermore, since the distance Z from the apex of the on-chip lens 132 to the glass substrate 734 can be reduced (e.g., 1 μm or less) by forming the pillar 701 as a microstructure, the color mixing effect caused by light reflected from the side of the pillar 701 can be further reduced.

[0376] Simultaneously, based on the ratio of the expected stress W to the tensile and compressive strength σ of the material used for the support 701, the total cross-sectional area of ​​the support 701 (the cross-sectional area in the plane perpendicular to the thickness direction of the substrate) can be determined. For example, when the stress applied to the laminated substrates (131 and 136) is W, the tensile strength of the support 701 is σ, and the area of ​​the air gap 151 between the laminated substrates (131 and 136) and the glass substrate 734 is AR, the diameter of each support 701 can be determined such that the total cross-sectional area of ​​the support 701 ((the diameter of the support)) is equal to the cross-sectional area of ​​the support 701. 2 / 4×π)×number of pillars)PR satisfies the following formula (2).

[0377] PR>AR×W / σ(2)

[0378] Furthermore, in order to prevent the stress W propagated through the pillars 701 from concentrating on a portion of the semiconductor substrates 131 and 136, for example, it is advantageous to increase the number of pillars 701 and distribute the pillars 701 uniformly in the pixel array unit 101.

[0379] Other structures, functions, and effects can be the same as those in the above-described embodiments, therefore detailed descriptions are omitted here.

[0380] 8. Eighth Implementation Plan

[0381] Next, the solid-state imaging apparatus and electronic device according to the eighth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0382] In the seventh embodiment described above, a structure in which a plurality of micropillars 701 arranged randomly or regularly support an image sensor chip relative to a glass substrate 734 has been illustrated. On the other hand, in the eighth embodiment, a structure in which the number of pillars 701 can be further reduced is illustrated.

[0383] 8.1 Examples of cross-sectional structures

[0384] Figure 42 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the eighth embodiment. Figure 43 It is shown Figure 42 A top view showing the positional relationship between the lens and the pillar on the chip. Furthermore, although the image sensor 800 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 800 can be either a back-illuminated type or a front-illuminated type.

[0385] like Figure 42 and Figure 43 As shown, the image sensor 800 has the following structure: [as used in the seventh embodiment] Figure 36 In the same configuration as the image sensor 700 described above, the plurality of micropillars 701 provided per unit pixel 110 are replaced by a plurality of micropillars 801 provided for each unit pixel 110.

[0386] like Figure 43 As shown, each support 801 can be positioned at the apex of the lens 132 on each chip. Furthermore, like support 701, the cross-sectional shape of each support 801 can be deformed in various ways, such as circular and polygonal. Additionally, like support 701, each support 801 can be deformed in various ways, such as cylindrical, conical, and inverted conical.

[0387] When a pillar 801 is set in this way for a unit pixel 110, such as Figure 44 As shown, the distance L3a from the side of each pillar 801 to the adjacent unit pixel 110 can be increased by placing each pillar 801 at the apex of each on-chip lens 132. Therefore, the ratio of light reflected from the side of each pillar 801 to the adjacent pixel can be further reduced, thus further suppressing color mixing and further suppressing image quality degradation.

[0388] Furthermore, when the distance L3 between the supports 801 is 1.5 μm, according to the above equation (1), the ratio of δ3 / δ1 becomes 1.5. 4 / 10000 4 =5.06×10 -16 This is a very small value, so the displacement δ3 is negligible.

[0389] Furthermore, for example, when the stress W = 3 MPa, the tensile strength σ = 50 MPa, and the pixel size is 1.5 μm, the required diameter of the support column 801 is 0.42 μm, which is approximately 30% of the pixel size. However, if... Figure 45 As shown, since the light incident on the center of each unit pixel 110 is incident approximately vertically onto the light-receiving surface of the unit pixel 110 through the pillar 801, the effect on the convergence of incident light in each unit pixel 110 is considered negligible. Meanwhile, in Figure 45 For ease of explanation, the planarization film 161 and color filter 162 on the semiconductor substrate 131 are shown without omission. In the cross-sectional structure of the image sensor described using other figures, the planarization film 161 and color filter 162 can be disposed on the semiconductor substrate 131 in the same manner.

[0390] Furthermore, in the case of pupil correction, the position of the pillar 801 relative to the on-chip lens 132 can be offset from the vertex of the on-chip lens 132 according to the image height.

[0391] 8.2 Functions and Effects

[0392] As described above, according to this embodiment, by providing a pillar 801 for each unit pixel 110 to support the glass substrate, the rigidity of the image sensor 800 is improved, thereby suppressing warping and damage to the image sensor chip on which light receiving elements and logic circuits are disposed.

[0393] In addition, by placing the support rod 801 near the vertex of the on-chip lens 132, the impact on adjacent pixels can be reduced even for imaging lenses with short focal lengths and light incident angles.

[0394] Other structures, functions, manufacturing methods, and effects can be the same as those in the above-described embodiments, therefore detailed descriptions are omitted here.

[0395] 9. Ninth Implementation Plan

[0396] Next, the solid-state imaging apparatus and electronic device according to the ninth embodiment will be described in detail with reference to the accompanying drawings. Furthermore, in the following description, the same components as in the above embodiments are indicated by the same reference numerals, and therefore repeated descriptions are omitted.

[0397] In the eighth embodiment described above, a case has been illustrated in which the number of pillars 801 is reduced by providing one pillar 801 for each unit pixel 110. On the other hand, in the ninth embodiment, a structure in which the number of pillars 801 can be further reduced is illustrated.

[0398] 9.1 Examples of cross-sectional structures

[0399] Figure 46 This is a cross-sectional view showing an example of the cross-sectional structure of an image sensor according to the ninth embodiment. Figure 47 It is shown Figure 46 A top view showing the positional relationship between the lens and the pillar on the chip. Furthermore, although the image sensor 900 is illustrated as a back-illuminated type in this specification, as in the first embodiment, the image sensor 900 can be either a back-illuminated type or a front-illuminated type.

[0400] like Figure 46 and Figure 47 As shown, the image sensor 900 has the following structure: [In the eighth embodiment, it is used...] Figure 42 In the same configuration as the image sensor 800 described above, the micro-pillars 801 provided for each unit pixel 110 are replaced by pillars 901 provided in some of the unit pixels 110AF among the multiple unit pixels 110 arranged in an array.

[0401] like Figure 47 As shown, for example, pillars 901 can be provided in individual unit pixels 110AF for image plane phase difference type autofocus (AF) distributed at regular intervals and arranged in, for example, pixel array unit 101.

[0402] These unit pixels 110AF used for AF can be unit pixels that are not used to generate image data, i.e., not used as readout targets when generating image data, or unit pixels that are used as readout targets when automatically controlling the focus (AF) of the image sensor 900. In this case, the pixel values ​​of missing pixels (pixels corresponding to unit pixels 110AF) in the image data output from the image sensor 900 can be interpolated, for example, by pixel interpolation based on the pixel values ​​of surrounding pixels.

[0403] By providing struts 901 for the symmetrically arranged AF unit pixels 110 in this manner, the impact on the image data output from the image sensor 900 can be reduced or avoided. Furthermore, since the number of unit pixels 110 affected by light reflected from the sides of the struts 901 can be reduced by decreasing the number of struts 901, image quality degradation can be further suppressed.

[0404] Similar to pillar 801, each pillar 901 can be positioned at the apex of the lens 132 on each chip. Furthermore, like pillar 801, the cross-sectional shape of each pillar 901 can be deformed in various ways, such as circular and polygonal. Additionally, like pillar 801, each pillar 901 can be deformed in various ways, such as cylindrical, conical, and inverted conical.

[0405] Here, when the pixel size is 1.5μm and the 5 unit pixels 110 are between the unit pixels 110AF used for AF, according to the above equation (1), the ratio of δ4 / δ1 becomes (1.5×4). 4 / 10000 4 =1.296×10 -13 This is a very small value, so the displacement δ4 is negligible.

[0406] Additionally, for example, when the stress W = 3 MPa and the tensile strength σ = 50 MPa, the ratio W / σ of the area required for the strut 901 to the area of ​​the unit pixel 110AF becomes 3 / 50. In this case, the strength of the image sensor chip can be ensured by arranging 3 unit pixels 110AF (i.e., 3 struts 901) for 50 unit pixels 110.

[0407] 9.2 Functions and Effects

[0408] As described above, in this embodiment, since the support pillar 901 is provided for the unit pixel 110 that is not used to generate image data for AF, the number of unit pixels 110 affected by light reflected from the side of the support pillar 901 can be reduced. Therefore, image quality degradation can be further suppressed.

[0409] Other structures, functions, manufacturing methods, and effects can be the same as those in the above-described embodiments, therefore detailed descriptions are omitted here.

[0410] 10. Variations of the seventh to ninth implementation schemes

[0411] Furthermore, although the seventh embodiment described above illustrates a case where the on-chip lens 132 is not covered by the resin layer, this disclosure is not limited thereto, and this disclosure can employ, for example, Figure 48 The image sensor 700A shown has the following structure: the on-chip lens 132 is covered by a resin layer 133, and the sealing portion 735, the support 701, and the glass substrate 734 are stacked on the resin layer 133. However, Figure 48 A variation based on the image sensor 700 according to the seventh embodiment is shown, and the structure can be applied in the same way to other embodiments.

[0412] In addition, such as Figure 49 As shown in the image sensor 800A, a structure in which the glass substrate 734 is directly supported by the on-chip lens 132 can be adopted. In this case, since the pillar 801 in the eighth embodiment is omitted, for example, there is no reflection from the side of the pillar 801, thereby further suppressing image quality degradation due to color mixing.

[0413] 11. Example 1 of the application of moving bodies

[0414] The technology disclosed herein (the Technology) can be applied to a variety of products. For example, the Technology disclosed herein can be implemented as a device installed on any type of mobile body, including automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0415] Figure 50 This is a block diagram illustrating a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the technology of the embodiments according to this disclosure can be applied.

[0416] The vehicle control system 12000 includes multiple electronic control units connected via a communication network 12001. Figure 50 In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and a comprehensive control unit 12050. Furthermore, a microcomputer 12051, a sound and image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as functional components of the comprehensive control unit 12050.

[0417] The drive system control unit 12010 controls the operation of devices related to the vehicle's drive system according to various programs. For example, the drive system control unit 12010 is used as a control device for the following devices: a drive force generating device, such as an internal combustion engine or a drive motor, for generating the driving force of the vehicle; a drive force transmission mechanism for transmitting the driving force to the wheels; a steering mechanism for adjusting the steering angle of the vehicle; and a braking device for generating the braking force of the vehicle.

[0418] The body system control unit 12020 controls the operation of various devices installed on the vehicle body according to various programs. For example, the body system control unit 12020 is used as a control device for keyless entry systems, smart key systems, power windows, or various lights such as headlights, taillights, brake lights, turn signals, or fog lights. In this case, radio waves or signals from various switches transmitted from a portable device that serves as a substitute for a key can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals and controls the vehicle's door locking devices, power windows, lights, etc.

[0419] The exterior information detection unit 12030 detects information about the exterior of the vehicle on which the vehicle control system 12000 is installed. For example, the exterior information detection unit 12030 is connected to the imaging unit 12031. The exterior information detection unit 12030 causes the imaging unit 12031 to image the exterior of the vehicle and receives the captured images. Based on the received images, the exterior information detection unit 12030 can perform object detection processing or distance detection processing for objects such as people, vehicles, obstacles, markings, or characters on the road surface.

[0420] Imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. Imaging unit 12031 can output an electrical signal as an image or as distance measurement information. Furthermore, the light received by imaging unit 12031 can be visible light or invisible light such as infrared light.

[0421] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, the in-vehicle information detection unit 12040 is connected to a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that images the driver, and based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or concentration level, or determine whether the driver is asleep.

[0422] The microcomputer 12051 can calculate target control values ​​for the drive force generating device, steering mechanism, or braking device based on information about the vehicle's interior or exterior (obtained by the exterior information detection unit 12030 or the interior information detection unit 12040), and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control aimed at realizing the functions of an advanced driver assistance system (ADAS), including: collision avoidance or impact mitigation, following distance based on the vehicle's distance, vehicle speed maintenance, collision warning, or lane departure warning, etc.

[0423] Furthermore, the microcomputer 12051 can control the drive force generating device, steering mechanism, or braking device, etc., based on information about the vicinity of the vehicle (which is obtained by the external information detection unit 12030 or the internal information detection unit 12040) to perform cooperative control aimed at achieving autonomous driving, in which the vehicle drives autonomously without relying on the driver's operation.

[0424] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on information about the vehicle's exterior (obtained by the exterior information detection unit 12030). For example, the microcomputer 12051 can control the headlights to perform coordinated control aimed at preventing glare, such as switching from high beams to low beams, based on the position of the vehicle ahead or oncoming vehicles detected by the exterior information detection unit 12030.

[0425] The sound and image output unit 12052 transmits output signals of at least one of sound and image to an output device capable of visually or audibly notifying passengers of the vehicle or the outside of the vehicle. Figure 50 In the example, audio speaker 12061, display unit 12062, and instrument panel 12063 are shown as output devices. For example, display unit 12062 may include at least one of an in-vehicle display and a head-up display.

[0426] Figure 51 This is a diagram showing an example of the mounting location of the imaging unit 12031.

[0427] exist Figure 51 In the imaging unit 12031, imaging units 12101, 12102, 12103, 12104 and 12105 are included.

[0428] Imaging units 12101, 12102, 12103, 12104, and 12105 are, for example, positioned on the front nose, side mirrors, rear bumper, and rear door of vehicle 12100, as well as on the upper part of the interior windshield. Imaging unit 12101 positioned on the front nose and imaging unit 12105 positioned on the upper part of the interior windshield primarily acquire images of the front of vehicle 12100. Imaging units 12102 and 12103 positioned on the side mirrors primarily acquire images of the sides of vehicle 12100. Imaging unit 12104 positioned on the rear bumper or rear door primarily acquires images of the rear of vehicle 12100. Imaging unit 12105 positioned on the upper part of the interior windshield is primarily used to detect vehicles, pedestrians, obstacles, traffic signals, traffic signs, or lanes ahead.

[0429] Figure 51An example of the imaging range of imaging units 12101 to 12104 is shown. Imaging range 12111 represents the imaging range of imaging unit 12101 mounted on the front nose, imaging ranges 12112 and 12113 represent the imaging ranges of imaging units 12102 and 12103 mounted on the side mirrors, respectively, and imaging range 12114 represents the imaging range of imaging unit 12104 mounted on the rear bumper or rear door. For example, by superimposing image data captured by imaging units 12101 to 12104, a top-down image of the vehicle 12100 as viewed from above is obtained.

[0430] At least one of the imaging units 12101 to 12104 may have the function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including multiple imaging elements, or may be an imaging element having pixels for phase difference detection.

[0431] For example, the microcomputer 12051 can determine the distance to each three-dimensional object within the imaging range 12111 to 12114 and the distance over time (relative speed to the vehicle 12100) based on distance information obtained from imaging units 12101 to 12104, and extract the nearest three-dimensional object as the vehicle ahead, specifically, the three-dimensional object existing on the driving path of the vehicle 12100 and traveling in substantially the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). Furthermore, the microcomputer 12051 can pre-set a vehicle-to-vehicle distance to be maintained in front of the vehicle ahead and perform automatic braking control (including following-stop control) or automatic acceleration control (including following-start control), etc. Therefore, cooperative control intended for autonomous driving can be performed, enabling the vehicle to drive autonomously without relying on driver operation, etc.

[0432] For example, microcomputer 12051 can classify three-dimensional object data about three-dimensional objects into three-dimensional object data such as two-wheeled vehicles, standard-sized vehicles, large vehicles, pedestrians, utility poles, etc., based on distance information obtained from imaging units 12101 to 12104, extract the object, and use the object to automatically avoid obstacles. For example, microcomputer 12051 identifies obstacles around vehicle 12100 as obstacles that the driver of vehicle 12100 can visually recognize and obstacles that the driver of vehicle 12100 cannot visually recognize. Then, microcomputer 12051 can determine the collision risk, which represents the degree of risk of colliding with each obstacle. If the collision risk is equal to or higher than a set value and there is a possibility of collision, microcomputer 12051 can output a warning to the driver via audio speaker 12061 or display unit 12062, or execute forced deceleration or evasive steering through drive system control unit 12010 to perform driving assistance for collision avoidance.

[0433] At least one of the imaging units 12101 to 12104 can be an infrared camera that detects infrared light. For example, the microcomputer 12051 can identify a pedestrian by determining whether a pedestrian exists in the images captured by the imaging units 12101 to 12104. This pedestrian identification is performed, for example, by a procedure that extracts feature points from the images captured by the imaging units 12101 to 12104 (which are infrared cameras) and by a procedure that determines whether a person is a pedestrian by performing pattern matching processing on a series of feature points representing the outline of an object. When the microcomputer 12051 determines that a pedestrian exists in the images captured by the imaging units 12101 to 12104 and identifies the pedestrian, the sound and image output unit 12052 controls the display unit 12062 so that a rectangular outline for emphasis is superimposed on the identified pedestrian. Furthermore, the sound and image output unit 12052 can control the display unit 12062 so that an icon or the like representing a pedestrian is displayed at a desired location.

[0434] Examples of vehicle control systems that can be applied according to the technology of this disclosure have been described above. The technology of this disclosure can be applied to the imaging unit 12031 and the like in the above-described components. By applying the technology of this disclosure to the imaging unit 12031, clearer images can be obtained, thereby reducing driver fatigue.

[0435] 12. Examples of the application of endoscopic surgical systems

[0436] The technology disclosed herein (the technology) can be applied to a variety of products. For example, the technology disclosed herein can be applied to endoscopic surgical systems.

[0437] Figure 52This is a diagram illustrating an example of a schematic configuration of an endoscopic surgical system to which the technology (the technology) according to embodiments of the present disclosure can be applied.

[0438] Figure 52 The illustration shows a surgeon (physician) 11131 performing surgery on a patient 11132 on a bed 11133 using an endoscopic surgery system 11000. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy therapy device 11112, a support arm assembly 11120 supporting the endoscope 11100, and a trolley 11200 on which various devices for endoscopic surgery are mounted.

[0439] Endoscope 11100 includes a lens barrel 11101 and a camera head 11102, the portion of the lens barrel extending a predetermined length from its distal end inserted into the body cavity of patient 11132, the camera head being connected to the proximal end of the lens barrel 11101. In the illustrated example, although an endoscope 11100 is shown configured as a so-called rigid endoscope with a rigid lens barrel 11101, the endoscope 11100 can also be configured as a so-called flexible endoscope with a flexible lens barrel.

[0440] The lens barrel 11101 has an opening at its distal end for mounting an objective lens. A light source device 11203 is connected to the endoscope 11100 to introduce light generated by the light source device 11203 through a light guide extending into the lens barrel 11101 to the distal end of the lens barrel, and then through the objective lens onto the target object within the body cavity of the patient 11132. The endoscope 11100 can be a direct-viewing endoscope, a fluoroscopic endoscope, or a lateral-viewing endoscope.

[0441] An optical system and imaging element are housed inside the camera head 11102. The optical system focuses reflected light (observation light) from the observed target onto the imaging element. The imaging element converts the observation light into photoelectric light and generates an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. The image signal is then transmitted as raw (RAW) data to the CCU 11201.

[0442] For example, the CCU 11201 includes a central processing unit (CPU) and a graphics processing unit (GPU), and integrates the operation of the endoscope 11100 and the display device 11202. Further, for example, the CCU 11201 receives image signals from the camera head 11102 and performs various image processing operations on the image signals, such as developing (de-mosaicing), to display an image based on the image signals.

[0443] The display device 11202 displays an image based on an image signal that has been image-processed by the CCU 11201 under the control of the CCU 11201.

[0444] For example, the light source device 11203 includes a light source such as a light-emitting diode (LED) and provides illumination light for imaging the surgical site to the endoscope 11100.

[0445] Input device 11204 is the input interface of endoscopic surgery system 11000. Users can input various information or commands into endoscopic surgery system 11000 through input device 11204. For example, users may input commands to change the imaging conditions of endoscope 11100 (type of illumination light, magnification, focal length, etc.).

[0446] The treatment tool control device 11205 controls the drive of the energy therapy instrument 11112 to cauterize or cut tissue, close blood vessels, etc. The pneumoperitoneum device 11206 supplies gas into the patient's body cavity 11132 through the pneumoperitoneum tube 11111 to inflate the patient's body cavity, ensuring the endoscope 11100's field of vision and the surgeon's working space. The recorder 11207 can record various information related to the surgery. The printer 11208 can print various information related to the surgery in various formats such as text, images, or graphics.

[0447] For example, the light source device 11203 that provides illumination light for imaging the surgical site to the endoscope 11100 can be a white light source composed of LEDs, laser light sources, or combinations thereof. When the white light source is composed of a combination of red, green, and blue (RGB) laser light sources, the white balance of the captured image can be adjusted by the light source device 11203 because the output intensity and timing of each color (each wavelength) can be controlled with high precision. Furthermore, in this case, laser beams from each RGB laser light source are time-division multiplexed onto the target, and the driving of the imaging element of the camera head 11102 is controlled synchronously with the illumination timing, allowing images corresponding to RGB to be captured in a time-division multiplexed manner. According to this method, color images can be obtained even without configuring color filters for the imaging element.

[0448] Furthermore, the drive of the light source device 11203 can be controlled to change the intensity of the light to be output at predetermined intervals. By controlling the drive of the imaging element of the camera head 11102 in sync with the change in light intensity, images can be acquired in a time-division manner, and high dynamic range images can be generated by synthesizing the images, without the so-called blackening or whitening.

[0449] Furthermore, the light source device 11203 can be configured to provide light corresponding to a predetermined wavelength band for special light observation. For example, in special light observation, a so-called narrowband light observation (narrowband imaging) is performed by utilizing the wavelength dependence of light absorption by body tissues, in which the body tissue is irradiated with light that is narrower than the irradiation light used in ordinary observation (i.e., white light), thereby enabling high-contrast imaging of predetermined tissues such as blood vessels in mucosal surfaces. Alternatively, in special light observation, fluorescence observation can be performed to obtain an image using fluorescence generated by irradiation with excitation light. In fluorescence observation, fluorescence can be obtained by irradiating body tissue with excitation light and observing fluorescence from the body tissue (autofluorescence observation), or by locally injecting a reagent such as indocyanine green (ICG) into the body tissue and irradiating the body tissue with excitation light corresponding to the fluorescence wavelength of the reagent. The light source device 11203 can be configured to provide narrowband light and / or excitation light corresponding to this special light observation.

[0450] Figure 53 It is shown Figure 52 The block diagram shows an example of the functional configuration of the camera head 11102 and CCU 11201.

[0451] Camera head 11102 includes lens unit 11401, imaging unit 11402, drive unit 11403, communication unit 11404, and camera head control unit 11405. CCU 11201 includes communication unit 11411, image processing unit 11412, and control unit 11413. Camera head 11102 and CCU 11201 are communicatively connected to each other via transmission cable 11400.

[0452] Lens unit 11401 is an optical system disposed at the connection portion with lens barrel 11101. Observation light entering from the distal end of lens barrel 11101 is guided to camera head 11102 and introduced into lens unit 11401. Lens unit 11401 is composed of a combination of multiple lenses, including zoom lenses and focusing lenses.

[0453] The number of imaging elements constituting the imaging unit 11402 can be one (so-called single-plate type) or multiple (so-called multi-plate type). For example, when the imaging unit 11402 is configured as a multi-plate type, image signals corresponding to R, G, and B can be generated by the individual imaging elements, and the image signals can be synthesized to obtain a color image. Alternatively, the imaging unit 11402 can be configured to include a pair of imaging elements for acquiring right-eye and left-eye image signals corresponding to three-dimensional (3D) display, respectively. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of living tissue at the surgical site. It should be noted that when the imaging unit 11402 is configured as a multi-plate type, multiple lens unit 11401 systems can be provided corresponding to each imaging element.

[0454] Furthermore, the imaging unit 11402 may not be located in the camera head 11102. For example, the imaging unit 11402 may be located directly behind the objective lens inside the lens barrel 11101.

[0455] The drive unit 11403 is composed of an actuator, and under the control of the camera head control unit 11405, it moves the zoom lens and focusing lens of the lens unit 11401 a predetermined distance along the optical axis. Therefore, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.

[0456] The communication unit 11404 comprises a communication device for sending and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal acquired from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0457] Additionally, the communication unit 11404 receives control signals from the CCU 11201 for controlling the drive of the camera head 11102 and provides the control signals to the camera head control unit 11405. For example, the control signals include information related to imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value when capturing the image, and / or information specifying the magnification and focus of the captured image.

[0458] Furthermore, imaging conditions such as frame rate, exposure value, magnification, or focus can be appropriately specified by the user or can be automatically set by the control unit 11413 of CCU 11201 based on the acquired image signal. In the latter case, so-called automatic exposure (AE), automatic focus (AF), and automatic white balance (AWB) functions are set in endoscope 11100.

[0459] The camera head control unit 11405 controls the driving of the camera head 11102 based on the control signals received from the CCU 11201 via the communication unit 11404.

[0460] The communication unit 11411 comprises a communication device for sending and receiving various information to and from the camera head 11102. The communication unit 11411 receives image signals transmitted to it from the camera head 11102 via the transmission cable 11400.

[0461] Furthermore, the communication unit 11411 transmits control signals for controlling the driving of the camera head 11102 to the camera head 11102. Image signals and control signals can be transmitted via electrical communication, optical communication, etc.

[0462] The image processing unit 11412 performs various image processing operations on the image signal transmitted from the camera head 11102 as RAW data.

[0463] The control unit 11413 performs various controls related to imaging the surgical site using the endoscope 11100 and displaying the images obtained by imaging the surgical site. For example, the control unit 11413 generates control signals for controlling the drive of the camera head 11102.

[0464] Furthermore, the control unit 11413, based on the image signal that has already been image-processed by the image processing unit 11412, causes the display device 11202 to display the acquired image of the surgical site, etc. In this case, the control unit 11413 can use various image recognition technologies to identify various objects in the captured image. For example, the control unit 11413 can detect the shape, color, etc., of the edges of objects contained in the captured image, thereby identifying surgical tools such as surgical forceps, specific living areas, bleeding, fog when using the energy therapy device 11112, etc. When the captured image is displayed on the display device 11202, the control unit 11413 can use the recognition results to overlay various surgical support information onto the image of the surgical site. By displaying surgical support information in an overlay manner and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can perform the surgery reliably.

[0465] The transmission cable 11400 that connects the camera head 11102 and CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0466] Here, in the example shown, wired communication is performed using transmission cable 11400, but communication between camera head 11102 and CCU 11201 can be performed wirelessly.

[0467] Examples of endoscopic surgical systems that can apply the technology according to this disclosure have been described above. The technology according to this disclosure can be applied to, for example, the imaging unit 11402 of the camera head 11102 configured as described above. By applying the technology according to this disclosure to the camera head 11102, clearer images of the surgical site can be obtained, allowing the surgeon to more reliably identify the surgical site.

[0468] Furthermore, although the endoscopic surgical system has been used as an example, the technology disclosed herein can also be applied to, for example, microsurgical systems.

[0469] Although embodiments of this disclosure have been described above, the technical scope of this disclosure is not limited to the above embodiments, and this disclosure can be modified in various ways without departing from the spirit or scope of this disclosure. Furthermore, components of different embodiments and modifications can be appropriately combined.

[0470] The effects of the various embodiments described in this specification are illustrative and not limiting, and other effects may be obtained.

[0471] In addition, this technology can also be configured as follows.

[0472] (1) A solid-state imaging device, comprising:

[0473] Semiconductor substrate including light-receiving elements;

[0474] A lens on the chip is disposed on the first surface of the semiconductor substrate;

[0475] The resin layer covering the lens on the chip; and

[0476] A glass substrate, which is disposed separately from the resin layer on the first surface side of the semiconductor substrate.

[0477] (2) The solid-state imaging device according to (1) further includes a wall-like structure that supports the glass substrate relative to the semiconductor substrate.

[0478] (3) The solid-state imaging device according to (2), wherein,

[0479] The semiconductor substrate includes a plurality of light-receiving elements arranged in a matrix on the first surface side of the semiconductor substrate, and

[0480] The structure is disposed at the boundary portion of adjacent optical receiving elements.

[0481] (4) The solid-state imaging device according to (2) or (3), wherein,

[0482] The glass substrate includes a first trench in the surface facing the semiconductor substrate, and

[0483] The structure divides the first trench into multiple second trenches.

[0484] (5) The solid-state imaging device according to (4), wherein the structure is a partition wall that is part of the glass substrate and divides the first trench into the plurality of second trenches.

[0485] (6) The solid-state imaging device according to (4) or (5), wherein,

[0486] The lens on the chip corresponds one-to-one with each of the light-receiving elements, and,

[0487] The structure divides the first trench into a plurality of second trenches, such that each second trench corresponds one-to-one with a lens on the chip.

[0488] (7) The solid-state imaging device according to (4) or (5), wherein,

[0489] The lens on the chip corresponds one-to-one with each of the light receiving elements, and

[0490] The structure divides the first trench into a plurality of second trenches, such that each second trench corresponds one-to-one with each of the plurality of on-chip lenses.

[0491] (8) The solid-state imaging device according to (4) or (5), wherein the depth of the first trench is equal to or greater than 1 μm, and the depth of the first trench is equal to or less than half the maximum thickness of the glass substrate.

[0492] (9) The solid-state imaging apparatus according to any one of (2) to (7) further includes a first light-shielding film disposed on the surface of the semiconductor substrate side of the structure.

[0493] (10) The solid-state imaging device according to (9) further includes a second light-shielding film disposed on the side of the structure.

[0494] (11) The solid-state imaging apparatus according to any one of (1) to (10) further includes an anti-reflective film disposed on a surface of the glass substrate opposite to the surface facing the semiconductor substrate.

[0495] (12) The solid-state imaging apparatus according to any one of (1) to (10) further includes a filter disposed on a surface of the glass substrate opposite to the surface facing the semiconductor substrate and absorbs infrared light.

[0496] (13) The solid-state imaging apparatus according to any one of (1) to (12), wherein the roughness of the surface of the glass substrate facing the semiconductor substrate is higher than the roughness of the surface of the glass substrate opposite to the semiconductor substrate.

[0497] (14) The solid-state imaging device according to (4) or (5), wherein the resin layer rises toward the interior of each of the second trenches.

[0498] (15) The solid-state imaging device according to (4) or (5), wherein the cross-sectional shape of the surface of the second groove parallel to the first surface is rectangular.

[0499] (16) The solid-state imaging device according to (4) or (5), wherein the cross-sectional shape of the surface of the second groove parallel to the first surface is circular.

[0500] (17) A solid-state imaging device, comprising:

[0501] Semiconductor substrate including light-receiving elements;

[0502] A lens on the chip is disposed on the first surface of the semiconductor substrate;

[0503] A glass substrate, disposed separately from the on-chip lens on the first surface side of the semiconductor substrate; and

[0504] A columnar structure supporting the glass substrate relative to the semiconductor substrate.

[0505] (18) The solid-state imaging device according to (17), wherein,

[0506] The semiconductor substrate includes a plurality of the aforementioned light-receiving elements, and,

[0507] Multiple columnar structures are provided for one of the optical receiving elements.

[0508] (19) The solid-state imaging apparatus according to (18), wherein the columnar structures are arranged randomly or regularly for each of the light receiving elements.

[0509] (20) The solid-state imaging device according to (17), wherein,

[0510] The semiconductor substrate includes the plurality of light-receiving elements, and

[0511] A columnar structure is provided for one of the optical receiving elements.

[0512] (21) The solid-state imaging device according to (20), wherein the columnar structure is disposed at the apex of the lens on the chip.

[0513] (22) The solid-state imaging device according to (17), wherein,

[0514] The semiconductor substrate includes the plurality of light-receiving elements, and

[0515] The columnar structure is provided for some of the plurality of optical receiving elements.

[0516] (23) The solid-state imaging apparatus according to (22), wherein some of the light receiving elements are light receiving elements of pixels for autofocus adjustment of image plane phase difference type.

[0517] (24) The solid-state imaging apparatus according to any one of (17) to (23), wherein,

[0518] When the stress applied to the semiconductor substrate is W, the tensile strength of the columnar structure is σ, and the area of ​​the gap between the semiconductor substrate and the glass substrate is AR, the total area PR of the cross section of the columnar structure parallel to the first surface satisfies the following equation (3):

[0519] PR>AR×W / σ(3).

[0520] (25) The solid-state imaging apparatus according to any one of (17) to (24), wherein the height of the columnar structure from the first surface of the semiconductor substrate is less than the dimension of the light receiving element in the direction of the first surface.

[0521] (26) An electronic device comprising:

[0522] Solid-state imaging devices;

[0523] An optical system that images incident light on the light-receiving surface of the solid-state imaging device; and

[0524] The processor controls the solid-state imaging device, wherein

[0525] The solid-state imaging device includes:

[0526] Semiconductor substrate including light-receiving elements;

[0527] A lens on the chip is disposed on the first surface of the semiconductor substrate;

[0528] The resin layer covering the lens on the chip; and

[0529] A glass substrate, which is disposed separately from the resin layer on the first surface side of the semiconductor substrate.

[0530] (27) An electronic device comprising:

[0531] Solid-state imaging devices;

[0532] An optical system that images incident light on the light-receiving surface of the solid-state imaging device; and

[0533] The processor controls the solid-state imaging device, wherein

[0534] The solid-state imaging device includes:

[0535] Semiconductor substrate including light-receiving elements;

[0536] A lens on the chip is disposed on the first surface of the semiconductor substrate;

[0537] A glass substrate, disposed separately from the on-chip lens on the first surface side of the semiconductor substrate; and

[0538] A columnar structure supporting the glass substrate relative to the semiconductor substrate.

[0539] [List of reference numerals]

[0540] 100, 100A, 200, 200D, 300, 400, 500, 600, 700, 700A, 800, 800A, 900 Solid-state imaging devices (image sensors)

[0541] 101 pixel array unit

[0542] 102 Vertical Drive Circuit

[0543] 103-column processing circuit

[0544] 104 Horizontal Drive Circuit

[0545] 105 System Control Unit

[0546] 108 Signal Processing Units

[0547] 109 Data Storage Units

[0548] 110 pixels

[0549] 111 Transmission Transistor

[0550] 112 Reset Transistor

[0551] 113 Amplifying Transistor

[0552] 114 Select Transistor

[0553] 121 Optical Receiver Chip

[0554] 122 circuit chip

[0555] 131,136 Semiconductor substrate

[0556] 132 on-chip lens

[0557] 133, 133A, 233 Resin Layer

[0558] 134, 134A, 234, 234A, 234B, 234C, 734 glass substrates

[0559] 135, 235, 235A, 235b trenches

[0560] 137 Lead-out electrode

[0561] 137A electrode pad

[0562] 138 spherical bumps

[0563] 139 Passivation layer

[0564] Alignment marks 141, 142

[0565] 143 Bottom

[0566] 150 effective pixel area

[0567] 151,251,251A air gap

[0568] 201, 201A, 201D partition walls

[0569] 201a row partition wall

[0570] 201b Column divider

[0571] 202 Upper Surface

[0572] 211,212 Boundary section

[0573] 301, 301A, 401, 401A Light-blocking Film

[0574] 501 Anti-reflective film

[0575] 601 IR Cutoff Filter

[0576] 701, 801, 901 Pillars

[0577] 735 Sealing section

[0578] 1000 electronic devices

[0579] 1020 Imaging Lens

[0580] 1030 storage units

[0581] 1040 processor

[0582] FD floating diffusion layer

[0583] LD pixel drive line

[0584] LD111 Transmission Transistor Drive Line

[0585] LD112 reset transistor drive line

[0586] LD114 Select Transistor Drive Line

[0587] PD photodiode

[0588] VSL Vertical Signal Line

Claims

1. A solid-state imaging device comprising: a semiconductor substrate including a light-receiving element; an on-chip lens provided on a first surface of the semiconductor substrate; a resin layer covering the on-chip lens; a glass substrate provided on the first surface side of the semiconductor substrate separately from the resin layer; and a wall structure supporting the glass substrate with respect to the semiconductor substrate, wherein the semiconductor substrate includes a plurality of the light-receiving elements provided in a matrix form on the first surface side of the semiconductor substrate, and the structure is provided at a boundary portion of adjacent light-receiving elements.

2. The solid-state imaging device according to claim 1, wherein the glass substrate includes a first groove in a surface facing the semiconductor substrate, and the structure divides the first groove into a plurality of second grooves. The structure is a partition wall that is a portion of the glass substrate and divides the first groove into the plurality of second grooves.

3. The solid-state imaging device according to claim 2, wherein 4. The solid-state imaging device according to claim 2, wherein the on-chip lens corresponds to each of the light-receiving elements, and the structure divides the first groove into the plurality of second grooves so that each of the second grooves corresponds to the on-chip lens.

5. The solid-state imaging device according to claim 2, wherein the on-chip lens corresponds to each of the light-receiving elements, and the structure divides the first groove into the plurality of second grooves so that each of the second grooves corresponds to each of a plurality of the on-chip lenses. A depth of the first groove is equal to or greater than 1 pm, and the depth of the first groove is a depth equal to or less than half of a maximum thickness of the glass substrate.

6. The solid-state imaging device according to claim 2, wherein 7. The solid-state imaging device according to claim 1, further comprising a first light-shielding film provided on a surface of the semiconductor substrate side of the structure.

8. The solid-state imaging device according to claim 7, further comprising a second light-shielding film provided on a side surface of the structure.

9. The solid-state imaging device according to any one of claims 1 to 8, further comprising an anti-reflection film provided on a surface of the glass substrate on a side opposite to a surface facing the semiconductor substrate.

10. The solid-state imaging device according to any one of claims 1 to 8, further comprising a filter provided on a surface of the glass substrate on a side opposite to a surface facing the semiconductor substrate and absorbing infrared light. A surface of the glass substrate facing the semiconductor substrate has a higher roughness than a surface of the glass substrate on a side opposite to the semiconductor substrate.

11. The solid-state imaging device according to any one of claims 1-8, wherein, The resin layer is raised toward an inside of each of the second grooves.

12. The solid-state imaging device according to claim 2, wherein A cross-sectional shape of a surface of the second groove parallel to the first surface is rectangular.

13. The solid-state imaging device according to claim 2, wherein A cross-sectional shape of a surface of the second groove parallel to the first surface is circular.

14. The solid-state imaging device according to claim 2, wherein 15. A solid-state imaging device comprising: a semiconductor substrate including a light-receiving element; an on-chip lens provided on a first surface of the semiconductor substrate; ​ a glass substrate provided on the first surface side of the semiconductor substrate separately from the on-chip lens; and a columnar structure that supports the glass substrate with respect to the semiconductor substrate, wherein the semiconductor substrate includes a plurality of the light-receiving elements, and a plurality of the columnar structures are provided for one of the light-receiving elements.

16. A solid-state imaging device comprising: a semiconductor substrate including a light-receiving element; an on-chip lens provided on a first surface of the semiconductor substrate; a glass substrate provided on the first surface side of the semiconductor substrate separately from the on-chip lens; and a columnar structure that supports the glass substrate with respect to the semiconductor substrate, wherein the semiconductor substrate includes a plurality of the light-receiving elements, and one of the columnar structures is provided for one of the light-receiving elements.

17. An electronic apparatus comprising: the solid-state imaging device according to any one of claims 1-16; an optical system that images incident light on a light-receiving surface of the solid-state imaging device; and a processor that controls the solid-state imaging device.

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