Semiconductor device substrate, method for manufacturing semiconductor device substrate, and semiconductor device

Abstract

The present application provides a semiconductor device substrate, a method for manufacturing a semiconductor device substrate, and a semiconductor device. The present application provides a semiconductor device substrate having a pad main body portion and an external electrode main body portion at a lower cost and in a simplified structure, and does not induce magnetic generation. The semiconductor device substrate of the present application has an external electrode (3) formed on a surface of a substrate (16). The external electrode (3) has a third surface layer (7) formed on the surface of the substrate (16), an external electrode main body portion (9) formed on the surface of the third surface layer (7), and a fourth surface layer (13) formed on the surface of the external electrode main body portion (9). The external electrode main body portion (9) of the external electrode (3) is formed of non-magnetic Ni-P.

Description

Technical Field

[0001] The present invention relates to a semiconductor device substrate having a mounting pad and an external electrode formed on a substrate, a method for manufacturing the semiconductor device substrate, and a semiconductor device using the semiconductor device substrate, wherein a semiconductor element is mounted and the semiconductor element and the external electrode are sealed with resin. Background Technology

[0002] In the semiconductor device substrate of the present invention, the main body of the mounting pad and the external electrode is formed by a non-magnetic Ni-P layer. However, the semiconductor device of Patent Document 1 discloses a mounting pad and an external electrode having a Ni-P layer. In the semiconductor device of Patent Document 1, the semiconductor element and the external electrode are sealed in resin. The mounting pad main body and the external electrode main body are formed by a non-magnetic Cu layer. A non-magnetic Ni-P layer is provided between the Cu layer and the surface layer exposed on the mounting surface side of the semiconductor device. The surface layer is formed by electroplating Au on a substrate not covered by a resist. The Ni-P layer is formed by electroless plating on the Au layer. The Cu layer is formed by electroplating Cu on the Ni-P layer to a thickness exceeding that of the resist, and an overhang is formed on its upper periphery. An Au layer is formed on the upper surface of the Cu layer by impact plating, and then an Ag layer is formed on the upper surface of the Au layer by electroplating.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-40679 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] According to the semiconductor device in Patent Document 1, since the main body of the mounting pad and the electrode body of the external electrode are formed of non-magnetic Cu and Ni-P layers respectively, even when a semiconductor element that is magnetically responsive is fixed to the mounting pad, there is no adverse magnetic effect on the semiconductor element. However, since the Au layer, Ni-P layer, Cu layer, Au layer, and Ag layer are stacked by sequentially performing electroforming, electroless plating, electroforming, impact plating, and electroforming, the manufacturing time of the semiconductor device increases, and a corresponding increase in manufacturing cost cannot be avoided.

[0008] The purpose of this invention is to simplify the structure of the non-magnetic mounting pad (mounting pad main body) and external electrode (external electrode main body), and to provide a semiconductor device substrate and semiconductor device that do not induce magnetism at a lower cost.

[0009] Methods for solving problems

[0010] The semiconductor device substrate of the present invention has an external electrode 3 formed on the surface of a substrate 16. The external electrode 3 includes: a third surface layer 7 formed on the surface of the substrate 16, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. The external electrode body portion 9 of the external electrode 3 is characterized in that it is formed of non-magnetic Ni-P.

[0011] The outer electrode body 9 of the outer electrode 3 is formed by Ni-P electroplating.

[0012] The Vickers hardness of the outer electrode body 9 of the outer electrode 3 is 400-600 HV.

[0013] The total thickness T1 of the external electrode 3 is 20–100 μm.

[0014] Another semiconductor device substrate of the present invention has a mounting pad 2 for a semiconductor element 1 and an external electrode 3 formed on the surface of a substrate 16. The mounting pad 2 includes: a first surface layer 6 formed on the surface of the substrate 16, a mounting pad body portion 8 formed on the surface of the first surface layer 6, and a second surface layer 12 formed on the surface of the mounting pad body portion 8. The external electrode 3 includes: a third surface layer 7 formed on the surface of the substrate 16, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. The mounting pad body portion 8 of the mounting pad 2 and the external electrode body portion 9 of the external electrode 3 are both formed of non-magnetic Ni-P.

[0015] The pad mounting body 8, which mounts the pad 2, and the external electrode body 9, which mounts the external electrode 3, are both formed by Ni-P electroplating.

[0016] The Vickers hardness of the pad mounting body 8 (with pad 2) and the external electrode body 9 (with external electrode 3) is 400-600 HV.

[0017] The total thickness T1 of the pad 2 and the external electrode 3 is 20 to 100 μm.

[0018] In the method for manufacturing a semiconductor device substrate of the present invention, a semiconductor device substrate on which an external electrode 3 is formed on the surface of a substrate 16 is taken as the object. The method for manufacturing a semiconductor device substrate is characterized by including: a resist patterning step, wherein a patterned resist is formed on the surface of the substrate 16; a first metal layer forming step, wherein a third surface layer 7 of the external electrode 3 is formed on the surface of the substrate 16 using the patterned resist; a body portion forming step, wherein an external electrode body portion 9 is formed on the surface of the third surface layer 7; and a second metal layer forming step, wherein a fourth surface layer 13 is formed on the surface of the external electrode body portion 9; and in the body portion forming step, a Ni-P electroplating treatment is performed on the surface of the third surface layer 7 to form the external electrode body portion 9.

[0019] In another method for manufacturing a semiconductor device substrate according to the present invention, the semiconductor device substrate having a mounting pad 2 for a semiconductor element 1 and an external electrode 3 formed on the surface of a substrate 16 is described. The method for manufacturing the semiconductor device substrate is characterized by including: a resist patterning step, wherein a patterned resist is formed on the surface of the substrate 16; a first metal layer forming step, wherein a first surface layer 6 for the mounting pad 2 and a third surface layer 7 for the external electrode 3 are formed on the surface of the substrate 16 using the patterned resist; a main body forming step, wherein a mounting pad main body 8 and an external electrode main body 9 are formed on each surface of the first surface layer 6 and the third surface layer 7; and a second metal layer forming step, wherein a second surface layer 12 is formed on the surface of the mounting pad main body 8 and a fourth surface layer 13 is formed on the surface of the external electrode main body 9; and in the main body forming step, Ni-P electroplating is performed on the surfaces of the first surface layer 6 and the third surface layer 7 to form the mounting pad main body 8 and the external electrode main body 9.

[0020] In the semiconductor device of the present invention, the semiconductor element 1 is electrically connected to the external electrode 3 and is sealed inside the resin 5. The external electrode 3 includes: a third surface layer 7 exposed on the mounting surface S of the semiconductor device, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. The external electrode body portion 9 of the external electrode 3 is formed of non-magnetic Ni-P.

[0021] The outer electrode body 9 of the outer electrode 3 is formed by Ni-P electroplating.

[0022] The Vickers hardness of the outer electrode body 9 of the outer electrode 3 is 400-600 HV.

[0023] The total thickness T1 of the external electrode 3 is 20–100 μm.

[0024] In another semiconductor device of the present invention, a semiconductor element 1 fixed to a mounting pad 2 is electrically connected to an external electrode 3, and the semiconductor element 1, the mounting pad 2, and the external electrode 3 are sealed inside a resin 5. The mounting pad 2 includes: a first surface layer 6 exposed on the mounting surface S of the semiconductor device, a mounting pad body portion 8 formed on the surface of the first surface layer 6, and a second surface layer 12 formed on the surface of the mounting pad body portion 8. The external electrode 3 includes: a third surface layer 7 exposed on the mounting surface S of the semiconductor device, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. The mounting pad body portion 8 of the mounting pad 2 and the external electrode body portion 9 of the external electrode 3 are characterized in that they are formed of non-magnetic Ni-P.

[0025] The pad mounting body 8, which mounts the pad 2, and the external electrode body 9, which mounts the external electrode 3, are both formed by Ni-P electroplating.

[0026] The Vickers hardness of the pad mounting body 8 (with pad 2) and the external electrode body 9 (with external electrode 3) is 400-600 HV.

[0027] The total thickness T1 of the pad 2 and the external electrode 3 is 20 to 100 μm.

[0028] Invention Effects

[0029] In the semiconductor device substrate of the present invention, the external electrode 3 includes: a third surface layer 7 formed on the surface of the substrate 16, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. Furthermore, the external electrode body portion 9 of the external electrode 3 is formed of non-magnetic Ni-P. Compared with conventional semiconductor device substrates that form a thin, non-magnetic Ni-P layer on the surface layer, then a thick Cu layer on the Ni-P layer, and finally a thin Au layer on the protrusion, the structure of the external electrode body portion 9 can be simplified using this semiconductor device substrate. Furthermore, since the entire external electrode body portion 9 is formed of non-magnetic Ni-P, the entire external electrode body portion 9 can be made free from magnetic induction. Therefore, when using the semiconductor device substrate of the present invention to construct a semiconductor device having a magnetically responsive semiconductor element 1, such as a magnetic sensor, the magnetic stability of the semiconductor device can be improved while reducing the overall cost.

[0030] The external electrode body 9 of the external electrode 3 is formed by a Ni-P electroplating layer. With such a semiconductor device substrate, the external electrode body 9 can be easily formed without substrate treatments such as impact plating. Incidentally, when the external electrode body is made of Cu, impact plating is required after forming a surface layer on the substrate surface, inevitably increasing the cost of the semiconductor device.

[0031] The Vickers hardness of the external electrode body 9 of the external electrode 3 is set to 400-600 HV because if the Vickers hardness of the external electrode body 9 is less than 400 HV, the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the completed semiconductor device; if the Vickers hardness exceeds 600 HV, cracks are easily generated when a load is applied to the external electrode 3.

[0032] If the total thickness T1 of the external electrode 3 is less than 20 μm, the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the completed semiconductor device; if the total thickness T1 of the external electrode 3 exceeds 100 μm, the productivity (in terms of cost) will deteriorate.

[0033] In another semiconductor device substrate of the present invention, the mounting pad 2 includes: a first surface layer 6 formed on the surface of a substrate 16, a mounting pad main body 8 formed on the surface of the first surface layer 6, and a second surface layer 12 formed on the surface of the mounting pad main body 8. Furthermore, the external electrode 3 includes: a third surface layer 7 formed on the surface of the substrate 16, an external electrode main body 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode main body 9. Additionally, the mounting pad main body 8 of the mounting pad 2 and the external electrode main body 9 of the external electrode 3 are both formed of non-magnetic Ni-P. According to such a semiconductor device substrate, compared with conventional semiconductor device substrates that form a thin, non-magnetic Ni-P layer on the surface layer, then a thick Cu layer on the Ni-P layer, and finally a thin Au layer on the protrusion, the structure of the mounting pad main body 8 and the external electrode main body 9 can be simplified. Furthermore, since the mounting pad main body 8 and the external electrode main body 9 are formed entirely of non-magnetic Ni-P, the entire mounting pad main body 8 and the external electrode main body 9 can be made to be free from magnetic induction. Therefore, when using the semiconductor device substrate of the present invention to construct a semiconductor device having a semiconductor element 1 that induces magnetic induction, such as a magnetic sensor, the magnetic stability of the semiconductor device can be improved while reducing the overall cost.

[0034] The pad mounting body 8, which mounts the pad 2, and the external electrode body 9, which mounts the external electrode 3, are both formed with Ni-P electroplated layers. Based on such a semiconductor device substrate, the pad mounting body 8 and the external electrode body 9 can be easily formed without substrate treatment such as impact plating, thus enabling the provision of semiconductor devices at a low cost.

[0035] The Vickers hardness of the mounting pad body 8 (mounting pad 2) and the external electrode body 9 (external electrode 3) is set to 400-600 HV because if the Vickers hardness of the mounting pad body 8 and the external electrode body 9 is less than 400 HV, the mounting pad 2 and the external electrode 3 may detach when the substrate 16 is physically peeled off or in the completed semiconductor device; if the Vickers hardness exceeds 600 HV, cracks are easily generated when a load is applied to the mounting pad 2 and the external electrode 3.

[0036] If the total thickness T1 of the mounting pad 2 and the external electrode 3 is less than 20 μm, the mounting pad 2 and the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the completed semiconductor device; if the total thickness T1 of the mounting pad 2 and the external electrode 3 exceeds 100 μm, the productivity (in terms of cost) will be worse.

[0037] In the method for manufacturing a semiconductor device substrate of the present invention, an external electrode 3 is formed through a resist patterning process, a first metal layer formation process, a main body formation process, and a second metal layer formation process. Furthermore, in the main body formation process, a Ni-P electroplating process is performed on the surface of the third surface layer 7 to form the external electrode main body 9. According to this method for manufacturing a semiconductor device substrate, by performing Ni-P electroplating only on the substrate 16 that has undergone the first metal layer formation process, a semiconductor device substrate having an external electrode main body 9 that does not induce magnetic flux can be formed. Therefore, compared to conventional semiconductor device substrates that form a thin, non-magnetic Ni-P layer on the surface layer followed by a thick Cu layer with protrusions on the Ni-P layer, a semiconductor device substrate having an external electrode main body 9 that does not induce magnetic flux can be formed at a lower cost.

[0038] In another manufacturing method of the semiconductor device substrate of the present invention, the mounting pad 2 and the external electrode 3 are formed through the same resist patterning process, first metal layer formation process, main body formation process and second metal layer formation process as described above. Furthermore, in the main body formation process, Ni-P electroplating is performed on the surfaces of the first surface layer 6 and the third surface layer 7 to form the mounting pad main body 8 and the external electrode main body 9. According to this semiconductor device substrate manufacturing method, similarly to the above, by performing Ni-P electroplating only on the substrate 16 that has undergone the first metal layer formation process, a semiconductor device substrate having a mounting pad main body 8 and an external electrode main body 9 that do not induce magnetic flux can be formed. Therefore, compared with conventional semiconductor device substrates, a semiconductor device substrate having a mounting pad main body 8 and an external electrode main body 9 that do not induce magnetic flux can be formed at a lower cost.

[0039] In the semiconductor device of the present invention, the semiconductor element 1 is electrically connected to the external electrode 3 and is sealed inside the resin 5. The external electrode 3 includes: a third surface layer 7 exposed on the mounting surface S of the semiconductor device, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. Furthermore, the external electrode body portion 9 of the external electrode 3 is formed of non-magnetic Ni-P. According to such a semiconductor device, compared with conventional semiconductor devices that form a thin, non-magnetic Ni-P layer on the surface layer, then a thick Cu layer on the Ni-P layer, and finally a thin Au layer on the protrusion, the structure of the external electrode body portion 9 can be simplified. Furthermore, since the entire external electrode body portion 9 is formed of non-magnetic Ni-P, the entire external electrode body portion 9 can be made non-magnetically inductive. Therefore, in the case of a semiconductor device equipped with a semiconductor element 1 that is magnetically inductive, such as a magnetic sensor, the magnetic stability of the semiconductor device can be improved while reducing the overall cost. In addition, the structure of the semiconductor device can be simplified accordingly by omitting the mounting pad 2, thereby reducing its manufacturing cost.

[0040] The external electrode body 9 of the external electrode 3 is formed by Ni-P electroplating. According to such a semiconductor device, the external electrode body 9 can be easily formed without substrate treatment such as impact plating, and the semiconductor device can be provided cheaply.

[0041] The Vickers hardness of the external electrode body 9 of the external electrode 3 is set to 400-600 HV. In such a semiconductor device, if the Vickers hardness of the external electrode body 9 is less than 400 HV, the external electrode 3 may detach when the substrate 16 is physically peeled off or in the completed semiconductor device. Furthermore, if the Vickers hardness exceeds 600 HV, cracks are easily generated when a load is applied to the external electrode 3.

[0042] The total thickness T1 of the external electrode 3 is set to 20 to 100 μm. In such a semiconductor device, if the total thickness T1 of the external electrode 3 is less than 20 μm, the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the completed semiconductor device; if the total thickness T1 of the external electrode 3 exceeds 100 μm, the productivity (in terms of cost) deteriorates.

[0043] In another semiconductor device where a semiconductor element 1 fixed to a mounting pad 2 is electrically connected to an external electrode 3, and the components 1, 2, and 3 are sealed inside a resin 5, the mounting pad 2 includes: a first surface layer 6, a mounting pad body portion 8 formed on the surface of the first surface layer 6, and a second surface layer 12 formed on the surface of the mounting pad body portion 8. The external electrode 3 includes: a third surface layer 7 exposed on the mounting surface S of the semiconductor device, an external electrode body portion 9 formed on the surface of the third surface layer 7, and a fourth surface layer 13 formed on the surface of the external electrode body portion 9. Furthermore, the mounting pad body portion 8 and the external electrode body portion 9 are formed of non-magnetic Ni-P. According to such a semiconductor device, similar to the semiconductor device described above, the structure of the mounting pad body portion 8 and the external electrode body portion 9 can be simplified compared to conventional semiconductor devices. In addition, since the entire mounting pad body portion 8 and the external electrode body portion 9 are formed of non-magnetic Ni-P, the entire mounting pad body portion 8 and the external electrode body portion 9 can be free from magnetic induction. Therefore, in the case of a semiconductor device having a semiconductor element 1 that senses magnetism, such as a magnetic sensor, it is possible to improve the magnetic stability of the semiconductor device while reducing the overall cost.

[0044] The pad mounting body 8, which mounts the pad 2, and the external electrode body 9, which mounts the external electrode 3, are both formed by Ni-P electroplating. According to this semiconductor device, the pad mounting body 8 and the external electrode body 9 can be easily formed without substrate treatment such as impact plating, thus enabling the provision of a semiconductor device at a low cost.

[0045] The Vickers hardness of the mounting pad body 8 (mounting pad 2) and the external electrode body 9 (external electrode 3) is set to 400–600 HV. In such a semiconductor device, if the Vickers hardness of the mounting pad body 8 and the external electrode body 9 is less than 400 HV, the mounting pad 2 and the external electrode 3 may detach when the substrate 16 is physically peeled off or in the completed semiconductor device. Furthermore, if the Vickers hardness exceeds 600 HV, cracks are easily generated when a load is applied to the mounting pad 2 or the external electrode 3.

[0046] The total thickness T1 of the mounting pad 2 and the external electrode 3 is set to 20 to 100 μm. In such a semiconductor device, if the total thickness T1 of the mounting pad 2 and the external electrode 3 is less than 20 μm, the mounting pad 2 and the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the finished semiconductor device; if the total thickness T1 of the mounting pad 2 and the external electrode 3 exceeds 100 μm, the productivity (in terms of cost) deteriorates. Attached Figure Description

[0047] Figure 1 This is a longitudinal sectional front view of the semiconductor device according to Embodiment 1 of the present invention.

[0048] Figure 2 This is a three-dimensional view of a semiconductor device viewed from the bottom side.

[0049] Figure 3 (a) to (f) are explanatory diagrams illustrating the manufacturing process of a semiconductor device substrate according to Embodiment 1 of the present invention.

[0050] Figure 4 (a) to (d) are explanatory diagrams illustrating the manufacturing process of the semiconductor device according to Embodiment 1 of the present invention.

[0051] Figure 5 This is a longitudinal sectional front view of the semiconductor device according to Embodiment 2 of the present invention.

[0052] Figure 6 This is a longitudinal sectional front view of the semiconductor device according to Embodiment 3 of the present invention.

[0053] Symbol Explanation

[0054] 1: Semiconductor device; 2: Mounting pad; 3: External electrode; 4: Lead wire; 5: Resin; 6: First surface layer; 7: Third surface layer; 8: Mounting pad body; 9: External electrode body; 10, 11: Protrusion; 12: Second surface layer; 13: Fourth surface layer; 16: Substrate; 17: Resist layer; S: Mounting surface. Detailed Implementation

[0055] (Example 1) Figures 1 to 4 This describes a semiconductor device substrate and its manufacturing process according to Embodiment 1 of the present invention, as well as a semiconductor device on which a semiconductor element 1 is mounted. Figure 1As shown, the semiconductor device is constructed by sealing a semiconductor element 1 that is susceptible to magnetic fields, a mounting pad 2 exposed on the mounting surface S of the semiconductor device, six external electrodes 3, and leads 4 that electrically connect the semiconductor element 1 to the external electrodes 3 inside an insulating resin (sealing material) 5. It is used as a surface-mount unit electronic component (semiconductor device). The mounting pad 2 is positioned at the center of the mounting surface S of the semiconductor device, and the external electrodes 3 are arranged in a straight line of three, with the mounting pad 2 sandwiched in between. The semiconductor device is formed in a flat cuboid shape.

[0056] like Figure 1 As shown, the mounting pad 2 and the external electrode 3 each include: a first surface layer 6 and a third surface layer 7 exposed on the mounting surface S of the semiconductor device; a mounting pad main body 8 continuous with the first surface layer 6; an external electrode main body 9 continuous with the third surface layer 7; and a second surface layer 12 and a fourth surface layer 13 covering the surfaces of the two main bodies 8 and 9. The mounting pad main body 8 and the external electrode main body 9 are formed of non-magnetic Ni-P, and each surface layer 6, 7, 12, and 13 is a single layer made of any one non-magnetic metal (precious metal) such as gold, silver, palladium, or tin, or a layer of two or more metals (precious metals) stacked together. In this embodiment, the first surface layer 6 and the third surface layer 7 exposed on the mounting surface S are formed of gold, and the second surface layer 12 and the fourth surface layer 13 covering the surfaces of the two main bodies 8 and 9 are formed of silver.

[0057] A semiconductor device is formed through a process of forming a semiconductor device substrate and a process of mounting a semiconductor element 1 on the semiconductor device substrate. The semiconductor device substrate is formed through a resist patterning process (forming a patterned resist on the surface of a substrate 16), a first metal layer formation process (forming a first surface layer 6 and a third surface layer 7 on the surface of the substrate 16 using the patterned resist formed in the resist patterning process), a main body formation process (forming a pad-mounting body 8 and an external electrode body 9 on the surface of the first surface layer 6 and the third surface layer 7), and a second metal layer formation process (forming a second surface layer 12 and a fourth surface layer 13 on the surface of the pad-mounting body 8 and the external electrode body 9). Afterwards, the semiconductor device is completed through a semiconductor element 1 mounting process, a lead wire bonding process, a resin sealing process, a substrate peeling process, and a dicing process. The manufacturing process of the semiconductor device substrate and the semiconductor device will be described in summary below.

[0058] like Figure 3As shown in (a), in the resist patterning process, a photosensitive resist film is laminated onto the surface of a substrate 16 formed of a conductive metal plate to form a resist layer 17. A pattern film 18 is then adhered to the surface of the resist layer 17, and exposure is performed by irradiating ultraviolet light from an ultraviolet lamp 19. At this time, the ultraviolet light irradiates the resist layer 17 facing the light-transmitting holes 20 formed in the pattern film 18, causing the exposed resist layer 17 to cure. The unexposed portions of the resist layer 17, which are covered by the pattern film 18, are dissolved and removed by development, as shown in (a). Figure 3 As shown in (b), only the exposed portion remains on the substrate 16, and a patterned resist is formed between the exposed portions to form through holes for forming the mounting pad 2 and the external electrode 3.

[0059] like Figure 3 (c) As shown, in the first metal layer formation process, the substrate 16, which has undergone pre-plating treatment (degreasing, acid immersion, oxide film removal, activation, chemical etching, electrolytic treatment, impact plating, etc.), is immersed in an electroforming bath, and gold is electroplated onto the substrate 16 exposed to the previous pattern resist to form the first surface layer 6 and the third surface layer 7. At this time, the thickness of the first surface layer 6 and the third surface layer 7 is preferably set to 0.04 μm or more and 1.0 μm or less. In this embodiment, the electroforming (plating) time is adjusted to be 0.1 μm. If the thickness of the first surface layer 6 and the third surface layer 7 is less than 0.04 μm, the solder wettability is poor when mounting the semiconductor device. In addition, the adhesion between the Ni-P layer (the pad body 8 and the external electrode body 9) and the substrate 16 becomes too strong, and it may be difficult to peel off the substrate 16. In addition, if the thickness of the first surface layer 6 and the third surface layer 7 exceeds 1.0 μm, the solder bonding strength of the mounted semiconductor device may be deteriorated.

[0060] In the subsequent main body forming process, such as Figure 3 As shown in (d), the substrate 16 is immersed again in an electroforming bath, and Ni-P electroplating is performed on the surface sides of surface layers 6 and 7 to form the mounting pad body 8 and the external electrode body 9. At this time, by adjusting the electroforming (plating) process time, protrusions 10 and 11 can be formed on the upper part of the mounting pad body 8 (mounting pad 2) and the external electrode body 9 (external electrode 3). The protrusions 10 and 11 are formed in the body formation process by electroforming (plating) each body 8 and 9 beyond the thickness of the resist layer 17, and the peripheral portion (front end portion) of the protrusions 10 and 11 extends towards the previously cured resist layer 17. It should be noted that when the Ni-P layer is formed directly on the surface of the substrate 16 without forming the first surface layer 6 and the third surface layer 7, the Ni-P layer is firmly bonded to the substrate 16, making it difficult to peel off the substrate 16.

[0061] The surface roughness (arithmetic mean roughness Ra) of the mounting pad body 8 of the mounting pad 2 and the external electrode body 9 of the external electrode 3, formed by the Ni-P layer, is 0.2 to 0.3 μm. By making the thickness of the second surface layer 12 and the fourth surface layer 13 formed on the surfaces of each body part 8 and 9 thin, the surface state of each surface layer 12 and 13 is similar to that of each body part 8 and 9. Incidentally, if the surfaces of the second surface layer 12 and the fourth surface layer 13 are too smooth, the mounting performance of the semiconductor element 1 on the mounting pad 2 becomes good, but the adhesion with the resin 5 becomes poor. In addition, if the surfaces of the second surface layer 12 and the fourth surface layer 13 are too rough, the bonding performance when the electrode of the semiconductor element 1 is electrically connected to the external electrode 3 becomes poor. It should be noted that the surface roughness (arithmetic mean roughness Ra) of each surface layer of the mounting pad body and the external electrode body formed by Ni is 0.3 to 0.5 μm, and the surfaces of the mounting pad 2 and the external electrode 3 formed by Ni-P layer are formed to be slightly smooth.

[0062] In the subsequent second metal layer formation process, such as Figure 3 As shown in (e), a second surface layer 12 and a fourth surface layer 13 are formed by electroplating (plating) silver onto the surfaces of each main body portion 8 and 9. The thickness of each surface layer 12 and 13 is preferably 1.5 μm to 6.0 μm; in this embodiment, the electroplating (plating) time is adjusted to achieve 2 μm. If the thickness of each surface layer 12 and 13 is less than 1.5 μm, the adhesion deteriorates; if the thickness of each surface layer 12 and 13 exceeds 6.0 μm, there is a disadvantage of increased cost. It should be noted that when it is difficult for each surface layer 12 and 13 to adhere tightly to the surfaces of each main body portion 8 and 9, it is preferable to perform a pre-plating treatment on the surfaces of each main body portion 8 and 9 before electroplating (plating) each surface layer 12 and 13 to improve the adhesion of each surface layer 12 and 13 to each main body portion 8 and 9. The mounting pad body 8 and the external electrode body 9 preferably have a total thickness T1 of 20 to 100 μm for both the mounting pad 2 and the external electrode 3. In this embodiment, they are formed with a total thickness T1 of 40 μm for both the mounting pad 2 and the external electrode 3. If the second surface layer 12 and the fourth surface layer 13 are thin, the impact on the magnetic sensor (semiconductor element 1) will be smaller. However, depending on the characteristics of the semiconductor element 1 and the thickness and area of ​​each surface layer 12 and 13, the degree of impact on the magnetic sensor (semiconductor element 1) may vary.

[0063] like Figure 3As shown in (f), by removing the resist layer 17 remaining on the blank of the semiconductor device substrate obtained after the second metal layer formation process, a semiconductor device substrate with mounting pads 2 and external electrodes 3 formed on the substrate 16 can be obtained. Hardness measurements were performed on multiple main bodies 8 and 9 of the semiconductor device substrate, and the Vickers hardness of the mounting pad main body 8 and the external electrode main body 9 was 400–600 HV. Furthermore, a shear strength test was performed on the semiconductor device substrate with the resist layer 17 removed to confirm the adhesion between the mounting pads 2 and external electrodes 3 and the substrate 16. In the shear strength test, after fixing the substrate 16, a shearing tool was attached to the peripheral surface of the mounting pads 2 and external electrodes 3, and a force parallel to the substrate 16 was applied to the shearing tool. The load when the mounting pads 2 and external electrodes 3 detached from the substrate 16 was measured. The target value for the shear strength of the semiconductor device substrate in this embodiment is 100–500 g, and the average load measured was 297 g. The conventional semiconductor device substrate, whose mounting pad body and external electrode body are formed of Ni, has an average shear strength load of 324g, thus exhibiting approximately equal shear strength. It should be noted that if the adhesion strength between the mounting pad 2 and external electrode 3 and the substrate 16 is weak, the mounting pad 2 and external electrode 3 may detach from the substrate 16 during semiconductor element 1 mounting, bonding processes, resin sealing processes, etc. Conversely, if the adhesion strength between the mounting pad 2 and external electrode 3 and the substrate 16 is too strong, it becomes difficult to peel off the substrate 16.

[0064] In the mounting process of mounting semiconductor element 1 on the substrate for the semiconductor device obtained above, such as Figure 4 As shown in (a), the semiconductor component 1 is fixed to the mounting pad 2 using bonding materials (solder, paste, tape, chip bonding film, etc.), such as Figure 4 As shown in (b), the electrodes on the upper surface of the semiconductor element 1 and the external electrode 3 are connected by leads 4 made of fine wires such as gold and copper. After the bonding process is completed by electrically connecting the semiconductor element 1 and the external electrode 3, the process proceeds to the resin sealing process. In the resin sealing process, the surface side of the substrate 16 is mounted on a molding mold that serves as the upper mold, so that the substrate 16 acts as the lower mold. Thermosetting epoxy resin is injected into the molding mold and heated to cure it. At this time, as Figure 4 As shown in (c), on the substrate 16, multiple semiconductor devices are uniformly sealed in a state where a mounting pad 2 that becomes a semiconductor device and multiple external electrodes 3 are arranged together, forming a state where multiple semiconductor devices are connected.

[0065] Next, as Figure 4As shown in (d), by removing the substrate 16, the back side of the mounting pad 2 (first surface layer 6) and the external electrode 3 (third surface layer 7) is exposed at the bottom (mounting surface S) of each semiconductor device. To remove the substrate 16, for example, a method of physically peeling (removing) the substrate 16 from the semiconductor device side can be used. By using stainless steel, a material with excellent strength and peelability, as the substrate 16, it is possible to peel it off quickly from the semiconductor device side. Alternatively, if the substrate 16 is made of other metal materials, such as copper, a method of dissolving the substrate 16 by immersing it in an etching solution can also be used. Then, by performing a cutting process (cutting process), the semiconductor device can be obtained.

[0066] As explained above, in the semiconductor device of the above embodiment, the mounting pad body 8 of the mounting pad 2 and the external electrode body 9 of the external electrode 3 are both formed of non-magnetic Ni-P. Therefore, compared with conventional semiconductor devices that form a non-magnetic Ni-P layer on the surface layer by electroless plating, then form a Cu layer with protrusions on the Ni-P layer, and then form a thin Au layer on the Cu layer, the structure of the mounting pad body 8 and the external electrode body 9 can be simplified. In addition, by forming the entire mounting pad body 8 and the external electrode body 9 with non-magnetic Ni-P, the magnetic induction of both (mounting pad body 8 and external electrode body 9) can be eliminated. Therefore, even when constituting a semiconductor device with a magnetically responsive semiconductor element 1, such as a magnetic sensor, the influence of magnetism can be prevented, which can help improve the reliability of the semiconductor device.

[0067] Because the pad mounting body 8 of the pad mounting 2 and the external electrode body 9 of the external electrode 3 are formed by Ni-P electroplating, the number of plating steps for forming the pad mounting 2 and the external electrode 3 can be reduced compared with conventional semiconductor devices, and the semiconductor device can be provided more cheaply.

[0068] The Vickers hardness of the pad mounting body 8 (mounting pad 2) and the external electrode body 9 (external electrode 3) is preferably 400–600 HV. By achieving a Vickers hardness of 400–600 HV for the pad mounting body 8 and the external electrode body 9, the strength (rigidity) of the pad mounting 2 and the external electrode 3 can be ensured. Compared to existing products, even when the thickness of the pad mounting 2 and the external electrode 3 is made thin, it is possible to prevent the pad mounting 2 and the external electrode 3 from detaching.

[0069] The total thickness T1 of the mounting pad 2 and the external electrode 3 is preferably 20 to 100 μm. If the total thickness T1 of the mounting pad 2 and the external electrode 3 is less than 20 μm, the contact area with the resin 5 is small, and the mounting pad 2 and the external electrode 3 may fall off when the substrate 16 is physically peeled off or in the completed semiconductor device; if the total thickness T1 of the mounting pad 2 and the external electrode 3 exceeds 100 μm, it takes time to form the mounting pad 2 and the external electrode 3, and the productivity (in terms of cost) deteriorates.

[0070] (Example 2) Figure 5 This illustrates a semiconductor device according to Embodiment 2 of the present invention. In Embodiment 2, a semiconductor device is formed by performing a mounting process on a semiconductor device substrate without the mounting pad 2, thereby mounting a semiconductor element 1. The semiconductor element 1 is fixed to a predetermined position on the substrate 16 using an easily peelable bonding material. In the semiconductor device of this embodiment, with the bottom surface of the semiconductor element 1 and the third surface layer 7 of the external electrode 3 exposed on the mounting surface S of the semiconductor device, the semiconductor element 1 is sealed inside the resin 5, and the semiconductor element 1 and the external electrode 3 are electrically connected by a lead 4. Similar to Embodiment 1, the external electrode 3 is composed of a third surface layer 7, an external electrode body 9, and a fourth surface layer 13. The external electrode body 9 is formed by performing a Ni-P electroplating process on the surface of the third surface layer 7. Other components are the same as those in Embodiment 1, therefore the same reference numerals are used for the same components, and their descriptions are omitted. The same applies to Embodiment 3, which will be described later. According to such a semiconductor device, the structure of the semiconductor device can be simplified by omitting the mounting pad 2, and its manufacturing cost can be reduced.

[0071] (Example 3) Figure 6This describes a semiconductor device according to Embodiment 3 of the present invention. In Embodiment 3, for a semiconductor device substrate that omits the mounting pad 2, the semiconductor element 1 is fixed by means of a bonding material while spanning a pair of external electrodes 3. In the semiconductor device of this embodiment, with the third surface layer 7 of the external electrode 3 exposed on the mounting surface S of the semiconductor device, the semiconductor element 1 is sealed inside the resin 5, and the semiconductor element 1 is electrically connected to the external electrode 3 via a lead 4. The external electrode body 9 is formed by performing a Ni-P electroplating process on the surface of the third surface layer 7. In the semiconductor device of Embodiment 3, the mounting pad 2 supporting the semiconductor element 1 can also be omitted. According to such a semiconductor device, similar to the semiconductor device of Embodiment 2, the structure of the semiconductor device can be simplified by omitting the mounting pad 2, and its manufacturing cost can be reduced. It should be noted that the semiconductor element 1 and the external electrode 3 can also be electrically connected by flip chip bonding instead of wire bonding, in which case the bonding material can be omitted.

Claims

1. A substrate for a semiconductor device, which is a substrate for a semiconductor device having an external electrode (3) formed on a surface of a substrate (16), characterized in that the external electrode (3) has a third surface layer (7) formed on the surface of the substrate (16), an external electrode main body portion (9) formed on the surface of the third surface layer (7), and a fourth surface layer (13) formed on the surface of the external electrode main body portion (9), the external electrode main body portion (9) of the external electrode (3) is formed of non-magnetic Ni-P.

2. The semiconductor device substrate according to claim 1, wherein the external electrode main body portion (9) of the external electrode (3) is formed of an electroplated layer of Ni-P.

3. The semiconductor device substrate according to claim 1 or 2, wherein the Vickers hardness of the external electrode main body portion (9) of the external electrode (3) is 400 to 600 HV.

4. The substrate for a semiconductor device according to any one of claims 1 to 3, wherein the total thickness Tl of the external electrode (3) is 20 to 100 μm.

5. A substrate for a semiconductor device, which is a substrate for a semiconductor device having a semiconductor element (1), a mounting pad (2), and an external electrode (3) formed on a surface of a substrate (16), characterized in that the mounting pad (2) has a first surface layer (6) formed on the surface of the substrate (16), a mounting pad main body portion (8) formed on the surface of the first surface layer (6), and a second surface layer (12) formed on the surface of the mounting pad main body portion (8), the external electrode (3) has a third surface layer (7) formed on the surface of the substrate (16), an external electrode main body portion (9) formed on the surface of the third surface layer (7), and a fourth surface layer (13) formed on the surface of the external electrode main body portion (9), the mounting pad main body portion (8) of the mounting pad (2) and the external electrode main body portion (9) of the external electrode (3) are each formed of non-magnetic Ni-P.

6. The semiconductor device substrate according to claim 5, wherein the mounting pad main body portion (8) of the mounting pad (2) and the external electrode main body portion (9) of the external electrode (3) are each formed of an electroplated layer of Ni-P.

7. The semiconductor device substrate according to claim 5 or 6, wherein the Vickers hardness of the mounting pad main body portion (8) of the mounting pad (2) and the external electrode main body portion (9) of the external electrode (3) is 400 to 600 HV.

8. The semiconductor device substrate according to any one of claims 5 to 7, wherein the total thickness Tl of each of the mounting pad (2) and the external electrode (3) is 20 to 100 μm.

9. A method of manufacturing a substrate for a semiconductor device, which is a method of manufacturing a substrate for a semiconductor device in which an external electrode (3) is formed on a surface of a substrate (16), characterized by comprising: a resist patterning step of forming a pattern resist on a surface of a substrate (16); a first metal layer forming step of forming a third surface layer (7) of an external electrode (3) on the surface of the substrate (16) using the pattern resist; a main body portion forming step of forming an external electrode main body portion (9) on the surface of the third surface layer (7); and a second metal layer forming step of forming a fourth surface layer (13) on the surface of the external electrode main body portion (9); in the main body portion forming step, electroplating treatment of Ni-P is performed on the surface of the third surface layer (7) to form the external electrode main body portion (9).

10. A method of manufacturing a semiconductor device substrate, which is a method of manufacturing a semiconductor device substrate in which a semiconductor element (1), a mounting pad (2), and an external electrode (3) are formed on a surface of a substrate (16), characterized by comprising: a resist patterning step of forming a pattern resist on a surface of a substrate (16); a first metal layer forming step of forming a first surface layer (6) of a mounting pad (2) and a third surface layer (7) of an external electrode (3) on the surface of the substrate (16) using the pattern resist; The main body forming step forms the mounting pad main body (8) and the external electrode main body (9) on the surfaces of the first surface layer (6) and the third surface layer (7); and The second metal layer forming step forms the second surface layer (12) on the surface of the mounting pad main body (8) and the fourth surface layer (13) on the surface of the external electrode main body (9). In the main body forming step, the surfaces of the first surface layer (6) and the third surface layer (7) are subjected to an electroplating treatment of Ni-P to form the mounting pad main body (8) and the external electrode main body (9).

11. A semiconductor device in which a semiconductor element (1) and an external electrode (3) are electrically connected and are sealed inside a resin (5), characterized in that the external electrode (3) has a third surface layer (7) exposed on a mounting surface (S) of the semiconductor device, an external electrode main body (9) formed on a surface of the third surface layer (7), and a fourth surface layer (13) formed on a surface of the external electrode main body (9), the external electrode main body (9) of the external electrode (3) is formed of non-magnetic Ni-P.

12. The semiconductor device according to claim 11, wherein the external electrode main body (9) of the external electrode (3) is formed of an electroplated layer of Ni-P.

13. The semiconductor device according to claim 11 or 12, wherein the external electrode main body (9) of the external electrode (3) has a Vickers hardness of 400 to 600 HV.

14. The semiconductor device according to any one of claims 11 to 13, wherein the total thickness Tl of the external electrode (3) is 20 to 100 μm.

15. A semiconductor device in which a semiconductor element (1) and an external electrode (3) are electrically connected via a mounting pad (2), and the semiconductor element (1), the mounting pad (2), and the external electrode (3) are sealed inside a resin (5), characterized in that the mounting pad (2) has a first surface layer (6) exposed on a mounting surface (S) of the semiconductor device, a mounting pad main body (8) formed on a surface of the first surface layer (6), and a second surface layer (12) formed on a surface of the mounting pad main body (8), the external electrode (3) has a third surface layer (7) exposed on the mounting surface (S) of the semiconductor device, an external electrode main body (9) formed on a surface of the third surface layer (7), and a fourth surface layer (13) formed on a surface of the external electrode main body (9), the mounting pad main body (8) of the mounting pad (2) and the external electrode main body (9) of the external electrode (3) are formed of non-magnetic Ni-P.

16. The semiconductor device according to claim 15, wherein the mounting pad main body (8) of the mounting pad (2) and the external electrode main body (9) of the external electrode (3) are respectively formed of an electroplated layer of Ni-P.

17. The semiconductor device according to claim 15 or 16, wherein the mounting pad main body (8) of the mounting pad (2) and the external electrode main body (9) of the external electrode (3) have a Vickers hardness of 400 to 600 HV.

18. The semiconductor device according to any one of Claims 15 to 17, wherein the total thickness Tl of each of the mounting pad (2) and the external electrode (3) is 20 to 100 μm.

Images