Damper, vibration isolation device and semiconductor equipment

Abstract

The embodiment of the invention discloses a damper, a vibration isolation device and semiconductor equipment, relates to the technical field of vibration isolation, and solves the problem that a measurement frame in existing high-precision semiconductor equipment cannot realize good vibration isolation and good instantaneous stability at the same time. The damper comprises a first fixing support, a second fixing support, a supporting structure, at least one damping structure and at least one pre-tightening adjusting structure. The supporting structure is connected with the first fixing support or the second fixing support. Any damping structure comprises at least one shape memory alloy damping wire. All the shape memory alloy damping wires in any damping structure are connected with the first fixing support. In any damping structure, at least one shape memory alloy damping wire diffracts on the supporting structure in the opposite direction and is connected with the second fixing support. And the at least one pre-tightening adjusting structure is connected with the shape memory alloy damping wire in the at least one damping structure. And the pre-adjusting structure adjusts the pre-tightening force of the corresponding shape memory alloy damping wire.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of vibration isolation, and in particular to a damper, a vibration isolation device and a semiconductor device. BACKGROUND

[0002] Disturbance caused by external ground vibration and internal mechanical movement of the equipment can affect the measurement accuracy of high-precision semiconductor equipment (such as a lithography machine, an electron beam measurement device, etc.), resulting in deterioration of key performance indicators of the high-precision semiconductor equipment. Therefore, in order to pursue high yield and high precision, the high-precision semiconductor equipment needs to have both high-speed movement capability and instantaneous stability capability.

[0003] Therefore, some high-precision semiconductor equipment has a measurement frame. The measurement frame is provided with a platform on which a precision device (such as an interferometer) is installed, and is connected to the main body of the equipment. Considering that the natural frequency of the measurement frame is proportional to the square root of the connection stiffness of the measurement frame, the lower the connection stiffness of the measurement frame, the lower the natural frequency of the measurement frame, and the better the vibration isolation effect. Therefore, the connection stiffness of the measurement frame is usually reduced to achieve vibration isolation. Most of the vibrations of the main body of the equipment cannot be transmitted to the measurement frame, reducing the influence on the precision of the high-precision device in the semiconductor equipment. However, the low-stiffness measurement frame has a large structure displacement after being disturbed, increasing the tracking difficulty of the moving parts, and the instantaneous stability of the measurement frame is very poor. SUMMARY

[0004] The present application provides a damper, a vibration isolation device and a semiconductor device, which solves the problem that the measurement frame in the existing high-precision semiconductor equipment cannot simultaneously achieve good vibration isolation and good instantaneous stability.

[0005] To achieve the above-mentioned purpose, the present application adopts the following technical solutions:

[0006] In a first aspect, the present application provides a damper. The damper includes a first fixed support, a second fixed support, a support structure, one or more damping structures, and one or more pre-tightening adjustment structures. The support structure is connected to the first fixed support or the second fixed support. Any damping structure includes one or more shape memory alloy damping wires. All shape memory alloy damping wires in any damping structure can be connected to the first fixed support. In any damping structure, one or more shape memory alloy damping wires are diffracted on the support structure in opposite directions and are connected to the second fixed support. One or more pre-tightening adjustment structures can be connected to the shape memory alloy damping wires in one or more damping structures. The pre-tightening adjustment structure can adjust the pre-tightening force of the shape memory alloy damping wire.

[0007] The damper of the embodiments of the present application can be used in a vibration isolation device. Taking the vibration isolation device that isolates a vibration isolation platform (for setting precision instruments) from a fixed rack (main load bearing component) as an example, a plurality of the above-mentioned damper of the embodiments of the present application can be arranged between the vibration isolation platform and the fixed rack, and the diffraction directions of the shape memory alloy damping wires in the plurality of dampers can be different. For example, two shape memory alloy damping wires with perpendicular diffraction directions are included in the plurality of dampers. For example, when the vibration isolation platform is disturbed in one direction, the vibration isolation device produces a large amplitude low frequency swing, driving the shape memory alloy damping wires of the damping structures in the plurality of dampers to be stretched or released respectively. One or more pre-tightening adjusting structures can adjust the pre-tightening force of the corresponding shape memory alloy damping wire, to ensure that the shape memory alloy damping wire generates the transformation between martensite and austenite when stretched or released. Thus, the mechanical energy of the vibration isolation platform is consumed, and multi-dimensional damping effect can be achieved. Moreover, since the mass of the shape memory alloy damping wire in the above-mentioned damper is small, and the first fixed support, the second fixed support and the support structure can also be made of light materials, the connection stiffness of the vibration isolation device with the plurality of dampers added is still low, and the vibration isolation effect of the vibration isolation device is good. The above-mentioned vibration isolation device can also have multi-dimensional damping force, and can be integrated and modularly installed. Thus, while achieving good vibration isolation capability, the position stability of the vibration isolation device after impact is improved, that is, the instantaneous stability of the vibration isolation device is improved, the stable time is short, and the multi-degree-of-freedom attitude maintaining capability of the vibration isolation platform is good.

[0008] Based on the structure of the above-mentioned damper, in some embodiments of the present application, the above-mentioned damper includes a plurality of damping structures, and the shape memory alloy damping wires in the plurality of damping structures are all connected with the first fixed support. Moreover, the plurality of shape memory alloy damping wires are symmetrically diffraction on the support structure outwardly with the connection as the center. The plurality of shape memory alloy damping wires are diffraction in multiple directions, which improves the damping performance of the damper in more angles, and further improves the instantaneous stability of the vibration isolation device.

[0009] In some embodiments of the present application, the support structure is a connecting sleeve. One end of the connecting sleeve is connected to the first fixed support, and the first fixed support and the connecting sleeve form an installation cavity. The other end of the connecting sleeve is provided with a matching hole. The damper further comprises a connecting rod, and the middle part of the connecting rod is movably installed in the matching hole. Thus, the first section of the connecting rod is arranged in the installation cavity, and the second section of the connecting rod is located outside the connecting sleeve and movably connected to the second fixed support. The length of the first section is greater than the length of the second section. The shape memory alloy damping wire in one or more damping structures of the damper is wound on the connecting sleeve and connected to the part of the connecting rod located in the connecting sleeve. Since the length of the part of the connecting rod located in the connecting sleeve is greater than the length of the part of the connecting rod located outside the connecting sleeve. Therefore, when the fixed frame or the vibration isolation platform is subjected to vibration or impact, the force arm of the vibration isolation platform is longer, and the force arm of the fixed frame is shorter. According to the principle of lever, when the fixed frame or the vibration isolation platform is displaced, the shape memory alloy damping wire can transmit the displacement to the connecting rod. The displacement of the connecting rod at one end inside the connecting sleeve is larger, and the displacement of the connecting rod at one end outside the connecting sleeve is smaller. Therefore, the connecting rod can amplify the displacement transmitted by the fixed frame and reduce the displacement transmitted by the vibration isolation platform. Thus, the connecting rod expands the strain range of the shape memory alloy damping wire, improves the damping energy dissipation effect of the damper, and the multi-degree-of-freedom attitude stability of the vibration isolation platform is better.

[0010] The pre-tightening adjusting structure can have various embodiments. In some embodiments of the present application, the pre-tightening adjusting structure is an adjusting bolt. The adjusting bolt is connected to the first fixed support. The adjusting bolt is provided with a winding hole extending in the radial direction, and the shape memory alloy damping wire is wound on the adjusting bolt in the radial direction through the winding hole. When the adjusting bolt is rotated, the shape memory alloy damping wire can be wound more or less on the adjusting bolt in the radial direction. Thus, the pre-tightening force of the shape memory alloy damping wire is adjusted. Moreover, the shape memory alloy damping wire can pass through the winding hole, so it does not need to be disconnected at the adjusting bolt. Therefore, more shape memory alloy damping wires can be accommodated in a compact space to achieve stronger damping performance.

[0011] In some embodiments of the present application, the one damping structure includes a first shape memory alloy damping wire and a second shape memory alloy damping wire with opposite diffraction directions. The pre-tightening adjusting structure includes a pre-tightening spring set and an adjusting bolt. The pre-tightening spring set includes two pre-tightening springs which are oppositely spaced. One pre-tightening spring connects the first shape memory alloy damping wire with the first fixed support. The other pre-tightening spring connects the second shape memory alloy damping wire with the first fixed support. The adjusting bolt connects the two pre-tightening springs in the pre-tightening spring set. Thus, when the adjusting bolt is tightened or loosened, the distance between the two pre-tightening springs in the pre-tightening spring set can be adjusted, and the first shape memory alloy damping wire and the second shape memory alloy damping wire can be tightened or loosened. Thus, the purpose of adjusting the pre-tightening force of the first shape memory alloy damping wire and the pre-tightening force of the second shape memory alloy damping wire is achieved. The operation of adjusting the pre-tightening force by the pre-tightening adjusting structure is relatively simple.

[0012] In a second aspect, the embodiments of the present application also include a vibration isolation device, which includes a vibration isolation platform and one or more groups of the dampers described in the above embodiments. The first fixed supports in the one or more groups of dampers are connected with the vibration isolation platform. The second fixed supports in the one or more groups of dampers are used to be connected with a fixed rack. Any group of dampers includes two dampers, and the two dampers in the same group of dampers are symmetrically arranged along the vibration isolation platform. Moreover, the shape memory alloy damping wires in the same group of dampers have the same diffraction direction. Since the dampers in the vibration isolation device of the embodiments of the present application have the same structure as the dampers described in the above embodiments, both of them can solve the same technical problems and obtain the same technical effects, which will not be described here.

[0013] Based on the vibration isolation device, in some embodiments of the present application, the vibration isolation device further includes a support frame, a first vibration isolation member and a second vibration isolation member. The support frame is located above the vibration isolation platform. The first vibration isolation member is used to be connected between the support frame and the fixed rack. The first vibration isolation member is used to provide a buffering force for the support frame and the fixed rack to rotate in a first direction, rotate in a second direction and move in a third direction. Any two of the first direction, the second direction and the third direction are perpendicular to each other. The second vibration isolation member is connected between the support frame and the vibration isolation platform. The second vibration isolation member is used to provide a buffering force for the support frame and the vibration isolation platform to move in the first direction, move in the second direction and rotate in the third direction. Thus, the vibration isolation device of the embodiments of the present application has vibration isolation performance for the vibration isolation platform in six degrees of freedom in the first direction, the second direction and the third direction through the first vibration isolation member and the second vibration isolation member, which greatly reduces the influence of the motion disturbance of the motion mechanism on the fixed rack, or the disturbance, impact and the like of the external environment on the vibration of the precision components on the vibration isolation platform.

[0014] The aforementioned first vibration isolator has various structures. In some embodiments, the first vibration isolator includes a leaf spring structure, which comprises leaf springs stacked vertically. The leaf spring structure has advantages such as high reliability, simple structure, short manufacturing process, and low cost.

[0015] Furthermore, the structure of the aforementioned second vibration isolator can vary. In some embodiments, the second vibration isolator includes a flexible rod that extends in a vertical direction. The flexible rod has advantages such as good elastic-plastic deformation capability and good dynamic response.

[0016] Thirdly, embodiments of this application also include a semiconductor device, comprising a fixed frame and the vibration isolation device described in the above embodiments. In this vibration isolation device, a second fixed support for one or more dampers is connected to the fixed frame. Since the vibration isolation device in the semiconductor device of this application has the same structure as the vibration isolation device described in the above embodiments, and both can solve the same technical problem and achieve the same technical effect, further details are omitted here.

[0017] Furthermore, in some embodiments of this application, the semiconductor device further includes a motion mechanism mounted on a fixed frame, which is used to move the workpiece to be processed. Attached Figure Description

[0018] To illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be described below.

[0019] Figure 1 This is a schematic diagram of the structure of the semiconductor device as an electron beam detection device in an embodiment of this application;

[0020] Figure 2 This is a cross-sectional schematic diagram of the first type of damper according to an embodiment of this application from a first-view perspective;

[0021] Figure 3 This is a schematic diagram of the structure of the first type of damper according to an embodiment of this application from a second perspective;

[0022] Figure 4a This is a schematic diagram of the deformation structure of different parts of the shape memory alloy damping wire in the damper of the embodiment of this application;

[0023] Figure 4b for Figure 4a Stress-strain curves of the upper section of the shape memory alloy damping wire;

[0024] Figure 4c for Figure 4a Stress-strain curves of the lower section of the shape memory alloy damping wire;

[0025] Figure 5A cross-sectional view of the second damper in the first perspective according to an embodiment of the present application;

[0026] Figure 6 A structural view of the second damper in the second perspective according to an embodiment of the present application;

[0027] Figure 7 A structural view of the second damper according to an embodiment of the present application;

[0028] Figure 8 A structural view of a group of the second dampers on a vibration isolation platform according to an embodiment of the present application;

[0029] Figure 9 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the positive direction of the X axis according to an embodiment of the present application;

[0030] Figure 10 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the negative direction of the X axis according to an embodiment of the present application;

[0031] Figure 11 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the positive direction of the Y axis according to an embodiment of the present application;

[0032] Figure 12 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the negative direction of the Y axis according to an embodiment of the present application;

[0033] Figure 13 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the positive direction of the Z axis according to an embodiment of the present application;

[0034] Figure 14 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform moves in the negative direction of the Z axis according to an embodiment of the present application;

[0035] Figure 15 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform rotates in the clockwise direction around the X axis according to an embodiment of the present application;

[0036] Figure 16 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform rotates in the counterclockwise direction around the X axis according to an embodiment of the present application;

[0037] Figure 17 A deformation view of the shape memory alloy damping wire in a group of the second dampers when the vibration isolation platform rotates in the clockwise direction around the Y axis according to an embodiment of the present application;

[0038] Figure 18 A schematic diagram of the deformation of the shape memory alloy damping wire in a second group of dampers when the vibration isolation platform of the embodiment of the present application is rotated clockwise about the Y axis;

[0039] Figure 19 A schematic diagram of the deformation of the shape memory alloy damping wire in a second group of dampers when the vibration isolation platform of the embodiment of the present application is rotated counterclockwise about the Z axis;

[0040] Figure 20 A schematic diagram of the deformation of the shape memory alloy damping wire in a second group of dampers when the vibration isolation platform of the embodiment of the present application is rotated counterclockwise about the Z axis;

[0041] Figure 21 A schematic diagram of the structure of a third kind of damper in a second perspective view of the embodiment of the present application;

[0042] Figure 22 A schematic diagram of the structure of a group of third kind of dampers on the vibration isolation platform of the embodiment of the present application;

[0043] Figure 23 A schematic diagram of the structure of a group of second kind of dampers and a group of third kind of dampers on the vibration isolation platform of the embodiment of the present application;

[0044] Figure 24 A schematic diagram of the structure of a plurality of dampers with different diffraction directions and having a damping structure on the vibration isolation platform of the embodiment of the present application;

[0045] Figure 25 A schematic diagram of the structure of a fourth kind of damper in a second perspective view of the embodiment of the present application;

[0046] Figure 26 A schematic diagram of the structure of a fifth kind of damper in a second perspective view of the embodiment of the present application;

[0047] Figure 27 A stress-strain correspondence curve of the shape memory alloy damping wire with different pre-stresses in the embodiment of the present application;

[0048] Figure 28 A schematic diagram of the cooperation of the shape memory alloy damping wire and the adjusting bolt in the damper of the embodiment of the present application;

[0049] Figure 29 A stress-strain correspondence curve of a plurality of shape memory alloy damping wires with different pre-stresses connected by the connecting rod in the damper of the embodiment of the present application.

[0050] Reference Signs:

[0051] 1000 - electron beam detection device; 100 - fixed frame; 200 - interferometer; 300 - photosensitive element; 400 - vibration isolation device; 10 - vibration isolation platform; 20 - support frame; 30 - first vibration isolation member; 40 - second vibration isolation member; 50 - damper; 1 - first fixed support; 2 - second fixed support; 3 - support structure; 301 - mounting cavity; 31 - wiring hole; 32 - matching hole; 4 - damping structure; 41 - shape memory alloy damping wire; 41a - first shape memory alloy damping wire; 41b - second shape memory alloy damping wire; 5 - pre-tightening adjustment structure; 51 - adjustment bolt; 511 - winding hole; 52 - pre-tightening spring piece group; 521a / 521b - pre-tightening spring piece; 6 - connecting rod; 61 - first section; 62 - second section; 500 - movement mechanism. DETAILED DESCRIPTION

[0052] In order to make the purposes, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings.

[0053] Hereinafter, the terms "first", "second", and the like are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0054] In addition, in the present application, the orientation terms such as "upper", "lower", "left", "right", "horizontal", and "vertical" are defined with respect to the orientation of the components shown in the drawings, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and can be changed accordingly according to the change of the orientation of the components placed in the drawings.

[0055] In the present application, unless otherwise explicitly specified and limited, the term "connection" should be understood broadly, for example, "connection" can mean mechanical connection, physical connection. It can be fixed connection, or detachable connection, or integral; it can be directly connected, or indirectly connected through intermediate media. It can also be understood as physical contact and electrical conduction of components, or as a form of connection between different components in the circuit structure through the entity circuit of PCB copper foil or wire that can transmit electrical signals.

[0056] The present application provides a semiconductor device, which can include a photolithography machine, an electron beam detection device, and the like, which require high precision. The specific form of the above-mentioned electronic device is not specially limited in the embodiments of the present application. For the convenience of description, the following is an example of the electron beam detection device as shown in the Figure 1 electron beam detection device.

[0057] Please refer to Figure 1 , Figure 1 A structural schematic diagram of an electron beam detection device is provided for some embodiments of the present application. The electron beam detection device 1000 includes a fixed frame 100, an interferometer 200, a photosensitive element 300, and a vibration isolation device 400, etc. The fixed frame 100 not only needs to support the load quality of all internal structures, but also is directly connected with the outside world (for example, the fixed frame 100 is placed or fixed on the ground). Therefore, the fixed frame 100 will be disturbed by external noise and vibration. In addition to the above components, the above-mentioned electron beam detection device 1000 can also include a motion mechanism 500, which is installed on the fixed frame 100. The motion mechanism 500 can move a workpiece such as a chip to a target position. The vibration generated by the motion mechanism 500 during operation will also be transmitted to the fixed frame 100.

[0058] The above-mentioned interferometer 200 and photosensitive element 300 are key components for electron beam detection, and need to be very stable to ensure the detection accuracy of the workpiece such as the chip. The vibration isolation device 400 is connected with the fixed frame 100. And the vibration isolation device 400 includes a vibration isolation platform 10 and a vibration isolation structure, and the interferometer 200 and the photosensitive element 300 can be installed on the vibration isolation platform 10. The vibration isolation structure can separate the vibration isolation platform 10 from the fixed frame 100.

[0059] In some examples of the present application, continuing to refer to Figure 1 , the vibration isolation structure in the vibration isolation device 400 of the present application includes a support frame 20, a first vibration isolation piece 30, and a second vibration isolation piece 40. The support frame 20 can be located above the vibration isolation platform 10. And the support frame 20 bears the load quality of the vibration isolation platform 10 and all precision equipment such as the interferometer 200, the photosensitive element 300, etc. on the vibration isolation platform 10.

[0060] The first vibration isolation piece 30 is connected between the support frame 20 and the fixed frame 100. The first vibration isolation piece 30 can provide a buffering force for the support frame 20 and the fixed frame 100 to rotate in a first direction, to rotate in a second direction, and to move in a third direction.

[0061] The second vibration isolation piece 40 is connected between the support frame 20 and the vibration isolation platform 10. And the second vibration isolation piece 40 can provide a buffering force for the support frame 20 and the vibration isolation platform 10 to move in a first direction, to move in a second direction, and to rotate in a third direction.

[0062] Any two of the first direction, the second direction and the third direction are perpendicular to each other. For ease of description, the plane in which the vibration isolation platform 10 is located can be an XY plane, and the thickness direction of the vibration isolation platform 10 is the Z-axis direction. Accordingly, the first direction can be the X-axis direction, the second direction can be the Y-axis direction, and the third direction can be the Z-axis direction.

[0063] Therefore, the vibration isolation device 400 according to the embodiments of the present application has vibration isolation characteristics on the six degrees of freedom of the vibration isolation platform 10 in the X-axis, Y-axis and Z-axis directions through the first vibration isolation member 30 and the second vibration isolation member 40, greatly reducing the vibration influence of the motion mechanism 500 on the fixed rack 100, or the disturbance, impact and the like of the external environment on the interferometer 200 and the photosensitive element 300 and other precision components on the vibration isolation platform 10.

[0064] The first vibration isolation member 30 can adopt various embodiments. For example, the first vibration isolation member 30 includes a plate spring structure including plate springs stacked in the vertical direction (i.e., the Z-axis direction), which can isolate the support frame 20 and the fixed rack 100 from rotation in the X-axis direction, rotation in the Y-axis direction and movement in the Z-axis direction. The plate spring structure has the advantages of good reliability, simple structure, short manufacturing process flow and low cost.

[0065] In addition, the second vibration isolation member 40 can also adopt various embodiments. For example, the second vibration isolation member 40 includes a flexible rod extending in the vertical direction. Thus, the support frame 20 and the fixed rack 100 can be isolated from movement in the X-axis direction, movement in the Y-axis direction and rotation in the Z-axis direction. The flexible rod has the advantages of good elastic-plastic deformation capacity and good dynamic response. Alternatively, the second vibration isolation member can also include a spring extending in the vertical direction. The spring structure of the second vibration isolation member 40 has the advantages of being able to withstand large loads, corrosion resistance, long service life, being able to be used in large load and low frequency vibration isolation systems, and the like.

[0066] It should be noted that the vibration isolation device 400 according to the embodiments of the present application can include one first vibration isolation member 30, or two or more first vibration isolation members 30. In addition, the vibration isolation device 400 according to the embodiments of the present application can include one second vibration isolation member 40, or two or more second vibration isolation members 40. The present application does not limit this, and the number and distribution can be designed according to the buffering requirements.

[0067] Based on the structure of the vibration isolation device 400, according to the vibration reduction theory, when ω > √2ω n (ω, ω nThe vibration isolation device 400 has a good vibration isolation effect only when the excitation frequency and the natural frequency of the vibration isolation device 400 are the same. Therefore, the stiffness of the vibration isolation device 400 can be reduced to lower the natural frequency, so as to avoid the frequency band of the vibration source, and the motion disturbance of the motion mechanism 500 on the fixed rack 100 or the disturbance or impact of the external environment can be isolated from the precise components such as the interferometer 200 and the photosensitive element 300 on the vibration isolation platform 10.

[0068] However, the vibration isolation device 400 with low stiffness has a large structure displacement after being disturbed, which increases the tracking difficulty of the motion mechanism 500 and reduces the instantaneous stability of the vibration isolation device 400.

[0069] In order to improve the instantaneous stability of the vibration isolation device 400, the vibration isolation device 400 of the present application further comprises a damper 50 connected between the vibration isolation platform 10 and the fixed rack 100. The damper 50 needs to have a good damping effect on the basis of low stiffness to suppress the uncontrollable displacement of the vibration isolation device 400 after being disturbed and improve the instantaneous stability of the vibration isolation device 400.

[0070] With reference to Figure 2 The damper 50 of the embodiment of the present application comprises a first fixed support 1, a second fixed support 2, a support structure 3 and a damping structure 4. Either of the first fixed support 1 and the second fixed support 2 can be connected with the vibration isolation platform 10, and the other of the first fixed support 1 and the second fixed support 2 is connected with the fixed rack 100. The support structure 3 is connected with either of the first fixed support 1 and the second fixed support 2. For example, the support structure 3 and the first fixed support 1 can be connected by fasteners such as bolts. Hereinafter, the first fixed support 1 is installed on the vibration isolation platform 10, the second fixed support 2 is installed on the fixed rack 100, and the support structure 3 is connected with the first fixed support 1.

[0071] The damping structure 4 can comprise one shape memory alloy damping wire 41, or two or more shape memory alloy damping wires 41, and the present application does not limit this.

[0072] In some embodiments, with reference to Figure 2 and Figure 3 The damping structure 4 comprises one shape memory alloy damping wire 41. The middle part of the shape memory alloy damping wire 41 is connected with the first fixed support 1, one segment of the shape memory alloy damping wire 41 is diffracted on the support structure 3 along the positive direction of the Z axis (the direction of the Z axis arrow), and the other segment of the shape memory alloy damping wire 41 is diffracted on the support structure 3 along the negative direction of the Z axis (the opposite direction of the Z axis arrow). The two segments can be connected with the second fixed support 2.

[0073] The shape memory alloy damping wire 41 in this example can be made of any one of the following materials: nickel-titanium-based shape memory alloy (Ni-Ti SMA), copper-based shape memory alloy (Cu SMA), and iron-based shape memory alloy (Fe SMA). The shape memory alloy damping wire 41 has two crystal structures inside: martensite and austenite. Under stress induction, the two crystals will undergo phase transition, which can be referred to as superelasticity. After the vibration isolation platform 10 is disturbed in the direction of the Z axis, it will undergo large-amplitude low-frequency oscillation. At this time, according to this characteristic, the shape memory alloy damping wire 41 in the damping structure 4 is stretched or released by the vibration isolation platform 10. The shape memory alloy damping wire 41 can dissipate mechanical energy through phase transition and grain boundary friction, thereby producing good damping characteristics. It should be noted that the diameter of the shape memory alloy damping wire 41 can be selected according to the natural frequency of the actual vibration isolation platform 10 to meet the damping needs.

[0074] Figure 4a The deformation of different regions in the shape memory alloy damping wire 41 in a damping structure is shown. Among them, Figure 4a the solid point represents the connection point of the shape memory alloy damping wire 41 and the first fixed support 1. Figure 4b and Figure 4c are the stress-strain curves of the shape memory alloy damping wire 41. Among them, Figure 4b the arrow in the figure shows the stress-strain change trend of the upper section of the shape memory alloy damping wire 41. Figure 4c the arrow in the figure shows the stress-strain change trend of the lower section of the shape memory alloy damping wire 41.

[0075] When the vibration isolation platform 10 moves in the positive direction of the Z axis, as shown in Figure 4a and 4b , the section of the shape memory alloy damping wire 41 in the positive direction of the Z axis (i.e. the upper section of the shape memory alloy damping wire 41 shown in Figure 4a ) is released, the stress in this section of the shape memory alloy damping wire 41 is released, and the crystal structure is converted from martensite to austenite. The section of the shape memory alloy damping wire 41 in the negative direction of the Z axis (i.e. the lower section of the shape memory alloy damping wire 41 shown in Figure 4a ) is stretched, and the crystal structure is converted from austenite to martensite.

[0076] When the vibration isolation platform 10 moves in the negative direction of the Z axis, the section of the shape memory alloy damping wire 41 in the negative direction of the Z axis is stretched, and the crystal structure is converted from martensite to austenite. The section of the shape memory alloy damping wire 41 in the positive direction of the Z axis is released, the stress in this section of the shape memory alloy damping wire 41 is released, and the crystal structure is converted from martensite to austenite.

[0077] FromFigure 4a and 4b The stress-strain curve of the shape memory alloy damping wire 41 can be seen that the stress-strain curve of the shape memory alloy damping wire 41 together constitutes a hysteresis loop, and the area surrounded by the hysteresis loop is the energy dissipated by the vibration isolation platform 10. The transformation between martensite and austenite inside the shape memory alloy damping wire 41 can consume the energy of the vibration isolation platform 10, play a damping effect, and the damping effect in two directions is the same. Of course, in addition to the movement of the vibration isolation platform 10 and the fixed rack 100 along the Z axis, the shape memory alloy damping wire 41 can also play a damping effect in the case of swing or rotation of the vibration isolation platform 10 or the fixed rack 100 on the Z axis. And compared with the damper 50 using rubber material and damping oil, the damper 50 of the application uses the shape memory alloy damping wire 41 of metal material, which has good vacuum compatibility and can meet the use requirements of the electron beam detection equipment 1000 in a high-clean cavity.

[0078] It can be understood that the two sections of the shape memory alloy damping wire 41 described above can also be diffracted along the positive and negative directions of the X axis, or along the positive and negative directions of the Y axis. Thus, it can also have a damping effect in the corresponding direction, which will not be described here.

[0079] The shape memory alloy damping wire 41 in the damping structure 4 described above can have a kind of diffracting mode in the support structure 3. For example, as shown in Figure 2 The radial end of the connecting sleeve is connected with the first fixed support 1, and the connecting sleeve and the first fixed support 1 form a mounting cavity 301. At least one group of wire holes 31 is formed on the connecting sleeve, and the wire holes 31 are used to pass the shape memory alloy damping wire 41. The number of groups of wire holes 31 on the connecting sleeve can be the same as the number of damping structures 4. One group of wire holes 31 corresponds to the shape memory alloy damping wire 41 in one damping structure 4. Multiple groups of wire holes 31 correspond to the shape memory alloy damping wire 41 in one damping structure 4. Any group of wire holes 31 includes an even number of wire holes 31. The even number of wire holes 31 in any group of wire holes 31 is symmetrically distributed around the connection between the shape memory alloy damping wire 41 in the multiple damping structures 4 and the first fixed support 1. Thus, the shape memory alloy damping wire 41 in any damping structure 4 can be correspondingly passed through the even number of wire holes 31 in one group of wire holes 31 to be diffracted on the connecting sleeve from the outside to the inside and / or from the inside to the outside. Thus, the shape memory alloy damping wire 41 in one damping structure 4 can be diffracted on the connecting sleeve in opposite directions.

[0080] In other embodiments, referring to Figure 5 and Figure 6The damping structure 4 includes two shape memory alloy damping wires 41, one end of one shape memory alloy damping wire 41 is connected with the first fixed support 1, and the other end is connected with the second fixed support 2. This shape memory alloy damping wire 41 can be diffracted on the support structure 3 along the positive direction of the Z axis (the direction of the Z axis arrow). The other end of the other shape memory alloy damping wire 41 is connected with the first fixed support 1, and the other end is connected with the second fixed support 2. And this shape memory alloy damping wire 41 can be diffracted on the support structure 3 along the negative direction of the Z axis (the opposite direction of the Z axis arrow). The damping structure 4 can also obtain the same damping effect as the above-mentioned shape memory alloy damping wire 41 with one shape memory alloy damping wire 41, which will not be described here. And similarly, the above-mentioned two shape memory alloy damping wires 41 can also be diffracted along the positive and negative directions of the X axis, or along the positive and negative directions of the Y axis, respectively.

[0081] It should be noted that if a damping structure 4 includes two or more shape memory alloy damping wires 41, part of the shape memory alloy damping wires 41 can be diffracted in the same direction, and the remaining shape memory alloy damping wires 41 can be diffracted in the opposite direction of the above-mentioned direction. In order to ensure the balance of damping force in each direction, the number of shape memory alloy damping wires 41 diffracted in opposite directions in the same damping structure 4 should be equal.

[0082] The above is a description of the structure of the shape memory alloy damping wire 41 arranged in the damping structure 4. The damping structure 4 in the damping device 50 in the example can be one or more, and the present application does not limit this.

[0083] The damping device 50 shown in Figure 6 and Figure 7 includes two damping structures 4, one damping structure 4 in which the shape memory alloy damping wire 41 is diffracted along the positive direction of the Y axis and the negative direction of the Y axis, and the other damping structure 4 in which the shape memory alloy damping wire 41 is diffracted along the positive direction of the Z axis and the negative direction of the Z axis. Referring to Figure 8 , a set of the above-mentioned damping device 50 can be arranged between the vibration isolation platform 10 and the fixed rack 100, and the set of damping devices 50 includes two Figure 6 damping devices 50 shown in Figure 8 , the two damping devices 50 are symmetrical along the Y axis direction of the center of the vibration isolation platform 10. That is

[0084] From the top of the vibration isolation platform 10 (i.e. from above), when the vibration isolation platform 10 generates X-direction translation, all shape memory alloy damping wires 41 in the two damping structures 4 are simultaneously stretched and released to form damping force.

[0085] Specifically, as shown in Figure 9As shown, when the vibration isolation platform 10 moves towards the positive direction of the X axis, all the shape memory alloy damping wires 41 in the damper 50 on the left side of the vibration isolation platform 10 are stretched, and the crystal structure is transformed from austenite to martensite. All the shape memory alloy damping wires 41 in the damper 50 on the right side of the vibration isolation platform 10 are compressed, and the crystal structure is transformed from martensite to austenite. In the top view of Figure 9 , the relative orientation of the shape memory alloy damping wires 41 in the damper 50 on the vibration isolation platform 10 is the deformation direction of the actual shape memory alloy damping wires 41, rather than the actual physical arrangement direction. That is, the shape memory alloy damping wires 41 in the damper 50 on the left side and the damper 50 on the right side are all deformed towards the positive direction of the X axis. As shown, when the vibration isolation platform 10 moves towards the negative direction of the X axis, all the shape memory alloy damping wires 41 in the damper 50 on the left side of the vibration isolation platform 10 are compressed, and the crystal structure is transformed from martensite to austenite. All the shape memory alloy damping wires 41 in the damper 50 on the right side of the vibration isolation platform 10 are stretched, and the crystal structure is transformed from austenite to martensite. In the top view of Figure 9 , the relative orientation of the shape memory alloy damping wires 41 in the damper 50 on the vibration isolation platform 10 is the deformation direction of the actual shape memory alloy damping wires 41, rather than the actual physical arrangement direction. That is, the shape memory alloy damping wires 41 in the damper 50 on the left side and the shape memory alloy damping wires 41 in the damper 50 on the right side are all deformed towards the negative direction of the X axis. Thus, the damper 50 can consume the energy of the vibration isolation platform 10, and damp the translational vibration in the direction of the X axis. Figure 9 Figure 10 Figure 10

[0086] When the vibration isolation platform 10 generates translational motion in the Y axis direction and translational motion in the Z axis direction, the damper 50 on the left side and the damper 50 on the right side generate the same deformation.

[0087] That is, as shown, when the vibration isolation platform 10 generates translational motion in the positive direction of the Y axis, the shape memory alloy damping wires 41 diffracted in the positive direction of the Y axis in the damper 50 on the left side and the damper 50 on the right side are compressed, and the crystal structure is transformed from martensite to austenite. The shape memory alloy damping wires 41 diffracted in the negative direction of the Y axis, the positive direction of the Z axis and the negative direction of the Z axis in the damper 50 on the left side and the damper 50 on the right side are stretched, and the crystal structure is transformed from austenite to martensite. As shown, when the vibration isolation platform 10 generates translational motion in the negative direction of the Y axis, the shape memory alloy damping wires 41 diffracted in the negative direction of the Y axis in the damper 50 on the left side and the damper 50 on the right side are compressed, and the crystal structure is transformed from martensite to austenite. The shape memory alloy damping wires 41 diffracted in the positive direction of the Y axis, the positive direction of the Z axis and the negative direction of the Z axis in the damper 50 on the left side and the damper 50 on the right side are stretched, and the crystal structure is transformed from austenite to martensite. Figure 11 Figure 12 ​​​​As shown, when the vibration isolation platform 10 moves in the negative Y-axis direction, the shape memory alloy damping wires 41 diffracting in the negative Y-axis direction in both the left and right dampers 50 are compressed, and their crystal structure changes from martensite to austenite. Conversely, the shape memory alloy damping wires 41 diffracting in the positive Y-axis, positive Z-axis, and negative Z-axis directions in both the left and right dampers 50 are stretched, and their crystal structure changes from austenite to martensite. Thus, the damper 50 can dissipate the energy of the vibration isolation platform 10, and damping translational vibrations along the Y-axis.

[0088] Similarly, when viewed from the front of the vibration isolation platform 10 (i.e., from the front view perspective), as... Figure 13 As shown, when the vibration isolation platform 10 moves in the positive Z-axis direction, the shape memory alloy damping wires 41 diffracting in the positive Z-axis direction in both the left and right dampers 50 are compressed, and the crystal structure changes from martensite to austenite. Conversely, the shape memory alloy damping wires 41 diffracting in the negative Z-axis direction in both the left and right dampers 50 are stretched, and the crystal structure changes from austenite to martensite. Figure 14 As shown, when the vibration isolation platform 10 moves in the negative Z-axis direction, the shape memory alloy damping wires 41 diffusing in the negative Z-axis direction in both the left and right dampers 50 are compressed, and their crystal structure changes from martensite to austenite. Conversely, the shape memory alloy damping wires 41 diffusing in the positive Z-axis direction in both the left and right dampers 50 are stretched, and their crystal structure changes from austenite to martensite. Therefore, the damper 50 can dissipate the energy of the vibration isolation platform 10, providing damping for translational vibrations along the Z-axis. Similarly, the damper 50 can dissipate the energy of the vibration isolation platform 10, providing damping for vibrations along the Y-axis. Finally, the damper 50 can dissipate the energy of the vibration isolation platform 10, providing damping for vibrations along the Z-axis.

[0089] When the vibration isolation platform 10 rotates, such as along the X-axis, the Y-axis, and the Z-axis, the dampers 50 on the left and the right will undergo opposite configuration changes. Figure 15 and Figure 16 The deformation of the damper 50 when rotating along the X-axis (i.e., RX) is shown. Figure 17 and Figure 18 The deformation of the damper 50 when rotating along the Y-axis (i.e., RY) is shown. Figure 19 and Figure 20 The deformation of the damper 50 when rotating along the Z-axis (i.e., RZ) is shown. From Figure 15 , Figure 16 , Figure 17 , Figure 18 , Figure 19 and Figure 20It can be seen that the shape memory alloy damping wires 41 in the rotation direction are all released, and the shape memory alloy damping wires 41 in the opposite direction of the rotation direction are all stretched to form a hysteresis loop to dissipate energy, which will not be described one by one here.

[0090] Therefore, after the vibration isolation platform 10 is disturbed in any direction, the vibration isolation device 400 with the dampers 50 shown in the figure produces a large amplitude low frequency swing, which drives the shape memory alloy damping wires 41 of the damping structures 4 in the two dampers 50 to be stretched or released respectively, so that the shape memory alloy damping wires 41 in different diffraction directions correspondingly produce the transformation between martensite and austenite. Thus, the energy of the vibration isolation platform 10 is consumed, and a multi-dimensional damping effect can be achieved. Figure 20

[0091] Moreover, since the mass of the shape memory alloy damping wires 41 in the above-mentioned dampers 50 is small, and the first fixed support 1, the second fixed support 2 and the support structure 3 can also be made of light materials, the connection stiffness of the vibration isolation device 400 with the two additional dampers 50 is still low, and the vibration isolation effect is good. At the same time, the vibration isolation device 400 of the present application can also have a multi-dimensional damping force and can be integrated and modularly installed. Thus, while achieving good vibration isolation capability, the position stability of the vibration isolation device 400 after impact is improved, that is, the instantaneous stability of the vibration isolation device 400 is improved, the stable time is short, and the multi-degree-of-freedom attitude retention capability of the vibration isolation platform 10 is good.

[0092] It can be understood that in the vibration isolation device 400 of the present application, other even-numbered Figure 6 dampers 50 shown in the figure can also be used. These dampers 50 are arranged at intervals and symmetrically distributed along the Y-axis direction with the center of the vibration isolation platform 10, and the same damping effect or better damping effect can also be obtained. The present application does not limit this. Specifically, the above-mentioned dampers 50 can be arranged on the side surface of the vibration isolation platform 10, or can be arranged above or below the vibration isolation platform 10 through an extension structure, and the present application does not limit this.

[0093] In addition, referring to Figure 21 , if the two sections of the shape memory alloy damping wires 41 in one damping structure 4 of the damper 50 are diffraction along the X-axis positive direction and the X-axis negative direction respectively, and the two sections of the shape memory alloy damping wires 41 in the other damping structure 4 are diffraction along the Z-axis positive direction and the Z-axis negative direction respectively. Referring to Figure 22 , a group of the above-mentioned dampers 50 can be arranged between the vibration isolation platform 10 and the fixed rack 100, and the group of dampers 50 includes two Figure 21 ​The dampers 50 shown are symmetrical about the center of the vibration isolation platform 10 along the X-axis. One damper 50 is located on the upper side of the vibration isolation platform 10, and the other damper 50 is located on the lower side of the vibration isolation platform 10. Similarly, the vibration isolation device 400 can also have multi-dimensional damping forces; the deformation of the internal shape memory alloy damping wire 41 will not be described in detail here.

[0094] Furthermore, multiple sets of vibration isolation devices 400 in this application can also be used. Figure 21 The dampers 50 shown are the other even-numbered dampers. Figure 21 The damper 50 shown is an example. Multiple sets of dampers 50 are spaced apart, and two dampers 50 in any set are symmetrically distributed along the X-axis with respect to the center of the vibration isolation platform 10, resulting in better damping effect and uniform and stable damping effect in all directions. This application does not impose any limitations on this.

[0095] Of course, in some embodiments of this application, the vibration isolation device 400 may also be combined with Figure 8 Dampers 50 and Figure 21 The damper 50 is shown. (Example) Figure 23 As shown, the vibration isolation device 400 includes a set of Figure 8 The damper 50 and a set shown Figure 21 The dampers 50 shown are arranged in the same way as in the above embodiment on the vibration isolation platform 10, with better damping effect, resulting in better instantaneous stability of the vibration isolation device 400.

[0096] Similarly, in vibration isolation device 400 Figure 8 The damper 50 shown and Figure 21 The dampers 50 shown can also be in multiple sets. Figure 8 The dampers 50 shown are spaced apart, and any group Figure 8 Two dampers 50 shown are symmetrically distributed along the Y-axis with respect to the center of the vibration isolation platform 10. Multiple sets Figure 21 The dampers 50 shown are spaced apart, and any group Figure 21 The two dampers 50 shown are symmetrically distributed along the X-axis with respect to the center of the vibration isolation platform 10.

[0097] The above describes the distribution of dampers 50 with two sets of damping structures 4 on the vibration isolation platform 10 to achieve multi-dimensional damping. However, this example can also use dampers 50 with one set of damping structures 4 or dampers 50 with two or more sets of damping structures 4 (where the diffraction directions of the shape memory alloy damping wires 41 in the two or more sets of damping structures 4 are different). Accordingly, other distribution schemes of dampers 50 need to be adopted on the vibration isolation platform 10 to achieve the effect of multi-dimensional damping.

[0098] For example, for dampers 50 with one set of damping structures 4, the vibration isolation device 400 respectively distributes one or more sets of dampers 50 symmetrically (along the X-axis, Y-axis, or diagonally, etc.) on the vibration isolation platform 10. Figure 24 A distribution scheme of a plurality of dampers 50 with one set of damping structures 4 on the vibration isolation platform 10 is shown. As shown, Figure 24 The plurality of dampers 50 have shape memory alloy damping wires 41 with different diffraction directions, and are symmetrically distributed along the center of the vibration isolation platform 10.

[0099] For dampers 50 with two or more sets of damping structures 4, the shape memory alloy damping wires 41 in the plurality of damping structures 4 are all connected with the first fixed support 1. And, taking the connection between the damper 50 and the first fixed support 1 as the center, the plurality of shape memory alloy damping wires 41 are symmetrically diffused outward on the support structure 3. Therefore, as shown, Figure 25 The plurality of shape memory alloy damping wires 41 can be symmetrically diffused outward on the support structure 3 in the XZ plane, or as shown, Figure 26 The plurality of shape memory alloy damping wires 41 can be symmetrically diffused outward on the support structure 3 in the YZ plane, and the present application does not limit this.

[0100] In some embodiments of the present application, the vibration isolation device 400 can include one or more sets of Figure 25 The dampers 50 shown. And, the plurality of sets of Figure 25 The dampers 50 shown are distributed on the vibration isolation platform 10, and any two dampers 50 in the set of Figure 25 The dampers 50 shown are symmetrically distributed along the X-axis. The vibration isolation device 400 can also achieve the effect of multi-dimensional damping, and the damping effect in each direction is uniform and stable.

[0101] In some other embodiments of the present application, the vibration isolation device 400 can include one or more sets of Figure 26 The dampers 50 shown. And, the plurality of Figure 26 The dampers 50 shown are distributed on the vibration isolation platform 10, and any two dampers 50 in the set of Figure 26 The dampers 50 shown are symmetrically distributed along the Y-axis. The vibration isolation device 400 can also achieve the effect of multi-dimensional damping, and the damping effect in each direction is uniform and stable.

[0102] In some other embodiments of the present application, the vibration isolation device 400 can include one or more sets of Figure 25 The dampers 50 shown, and one or more sets of Figure 26 The dampers 50 shown. The distribution of one or more sets of Figure 25 The dampers 50 shown on the vibration isolation platform 10 is the same as the above Figure 8 The embodiment shown, and one or more sets of Figure 26The distribution of the dampers 50 on the isolation platform 10 is the same as the above-mentioned embodiment, and will not be described in detail here. The isolation device 400 can also achieve the effect of multi-dimensional damping, and the damping effect in each direction is uniform and stable. Figure 22 The isolation device 400 can also achieve the effect of multi-dimensional damping, and the damping effect in each direction is uniform and stable.

[0103] The above describes the structure of the dampers 50 of various different damping structures 4 and the distribution scheme in the isolation device 400. Since the strain of the shape memory alloy damping wire 41 needs to be greater than a certain transformation threshold (refer back to the figure, where the dashed line intersects the hysteresis curve), the phase change of the shape memory alloy damping wire 41 occurs inside, thereby generating damping. Figure 4b and 4c , the transformation threshold is the intersection of the dashed line and the hysteresis curve in the figure), the phase change of the shape memory alloy damping wire 41 occurs inside, thereby generating damping. Figure 8 to Figure 20 , and Figure 22 to Figure 24 The shape memory alloy damping wire 41 in the figure is represented in the form of a spring, which also means that the shape memory alloy damping wire 41 has a pre-strain. Therefore, adjusting the pre-strain of the shape memory alloy damping wire 41 can effectively control the damping performance of the shape memory alloy damping wire 41.

[0104] The simulation of the shape memory alloy damping wire 41 with different pre-strains is shown in Figure 27 . Figure 27 Line type 1 represents the stress-strain corresponding curve of the shape memory alloy damping wire without pre-strain. Figure 27 Line type 2 represents the stress-strain corresponding curve of the shape memory alloy damping wire with 1% pre-strain. Figure 27 Line type 3 represents the stress-strain corresponding curve of the shape memory alloy damping wire with 2% pre-strain. Figure 27 Line type 4 represents the stress-strain corresponding curve of the shape memory alloy damping wire with 3% pre-strain.

[0105] As can be seen from Figure 27 , when there is no pre-strain, a 1% strain cycle does not trigger the damping characteristics of the shape memory alloy damping wire 41. When the pre-strain of the shape memory alloy damping wire 41 increases from 1% to 3%, the area enclosed by the hysteresis curve during reciprocating motion gradually increases, significantly affecting the damping performance of the shape memory alloy damping wire 41.

[0106] Therefore, in order to ensure the damping effect of the isolation device 400, it is necessary to set a pre-tightening force for the shape memory alloy damping wire 41. For example, the pre-tightening force can be set for the shape memory alloy damping wire 41 when it is connected to the first fixed support 1.

[0107] Refer back to Figure 2The damper 50 comprises one or more pre-tightening adjusting structures 5 connected with the shape memory alloy damping wires 41 in one or more damping structures 4 of the damper 50. The pre-tightening adjusting structures 5 can adjust the pre-tightening force of the shape memory alloy damping wires 41, and adjust the pre-strain of the shape memory alloy damping wires 41 to ensure the damping effect of the damper 50.

[0108] The pre-tightening adjusting structure 5 can have various structures. In some embodiments of the present application, continuing to refer to Figure 2 The pre-tightening adjusting structure 5 is an adjusting bolt 51. The adjusting bolt 51 is connected with the first fixed support 1. As shown in Figure 28 The adjusting bolt 51 is provided with a winding hole 511 extending in the radial direction, and the shape memory alloy damping wire 41 is diffracted on the adjusting bolt 51 through the winding hole 511. The winding hole 511 can be provided on the bolt head of the adjusting bolt 51. When the adjusting bolt 51 is rotated, the shape memory alloy damping wire 41 can be diffracted more or less on the adjusting bolt 51. Thus, the pre-tightening force of the shape memory alloy damping wire 41 is adjusted.

[0109] Moreover, the shape memory alloy damping wire 41 passes through the winding hole 511 and does not have to be disconnected at the adjusting bolt 51. Therefore, more shape memory alloy damping wires 41 can be accommodated in a compact space to achieve stronger damping performance. Accordingly, only one shape memory alloy damping wire 41 can be included in one damping structure 4.

[0110] It can be understood that in the damper 50 of the present application, one adjusting bolt 51 can be used to simultaneously adjust the pre-tightening force of the shape memory alloy damping wires 41 in multiple damping structures 4, or multiple adjusting bolts 51 can be used to adjust the pre-tightening force of the shape memory alloy damping wires 41 in multiple damping structures 4. The present application does not limit this.

[0111] In some other embodiments of the present application, referring back to Figure 5The one damping structure 4 includes a first shape memory alloy damping wire 41a and a second shape memory alloy damping wire 41b, and the diffraction direction of the first shape memory alloy damping wire 41a is opposite to the diffraction direction of the second shape memory alloy damping wire 41b. For example, the first shape memory alloy damping wire 41a diffraction is towards the positive direction of the X axis, and the second shape memory alloy damping wire 41b diffraction is towards the negative direction of the X axis. The pre-tightening adjusting structure 5 includes a pre-tightening spring group 52 and an adjusting bolt 51. The pre-tightening spring group 52 includes two oppositely spaced pre-tightening springs 521a and 521b, one pre-tightening spring 521a connects the first shape memory alloy damping wire 41a and the first fixed support 1, and the other pre-tightening spring 521b connects the second shape memory alloy damping wire 41b and the first fixed support 1. The adjusting bolt 51 connects the two pre-tightening springs 521a and 521b in the pre-tightening spring group 52. Therefore, when the adjusting bolt 51 is tightened or loosened, the distance between the two pre-tightening springs 521a and 521b in the pre-tightening spring group 52 can be adjusted, so as to tension or release the first shape memory alloy damping wire 41a and the second shape memory alloy damping wire 41b, and the pre-tightening force of the first shape memory alloy damping wire 41a and the pre-tightening force of the second shape memory alloy damping wire 41b can be adjusted.

[0112] It should be noted that in the damper 50 of the present application, Figure 5 The number of the pre-tightening adjusting structure 5 shown can be set according to the number of the damping structure 4. That is, the number of the pre-tightening adjusting structure 5 can be the same as the number of the damping structure 4.

[0113] In addition, in order to further expand the strain range of the shape memory alloy damping wire 41 in the damper 50, for the example that the support structure 3 is a connecting sleeve, continuing to refer to Figure 2 And Figure 5 The connecting sleeve is provided with a matching hole 32 at the radial end away from the first fixed support 1. In some embodiments of the present application, the damper 50 further includes a connecting rod 6, and the middle part of the connecting rod 6 is movably mounted in the matching hole 32. The connecting rod 6 can rotate in the matching hole 32. Therefore, the first section 61 of the connecting rod 6 is arranged in the mounting cavity 301, and the second section 62 of the connecting rod 6 is located outside the connecting sleeve and movably connected (such as hinged) with the second fixed support 2. All the shape memory alloy damping wires 41 in the damper 50 can be diffraction on the connecting sleeve and connected with the part of the connecting rod 6 located in the connecting sleeve. That is, all the shape memory alloy damping wires 41 are connected with the second fixed support 2 through the connecting rod 6. For example, the two ends of a shape memory alloy damping wire 41 pass through two wire holes 31 in opposite directions to be diffraction into the connecting sleeve, and then connected with the connecting rod 6, which is conducive to the centering arrangement of the connecting rod 6 in the connecting sleeve.

[0114] And, the length of the first section 61 of the connecting rod 6 is greater than the length of the second section 62. That is, the distance between the part of the connecting rod 6 located inside the connecting sleeve and the matching hole 32 is greater than the distance between the part of the connecting rod 6 located outside the connecting sleeve and the matching hole 32. Therefore, when the fixed frame 100 or the vibration isolation platform 10 vibrates or is impacted, the force arm of the vibration isolation platform 10 is longer, and the force arm of the fixed frame 100 is shorter.

[0115] According to the principle of the lever, when the fixed frame 100 or the vibration isolation platform 10 is displaced, the shape memory alloy damping wire 41 can transmit the displacement to the connecting rod 6. The displacement of the connecting rod 6 is greater at one end inside the connecting sleeve and smaller at the other end outside the connecting sleeve. Therefore, the connecting rod 6 can amplify the displacement transmitted by the fixed frame 100 and reduce the displacement transmitted by the vibration isolation platform 10. Thus, the strain range of the shape memory alloy damping wire 41 is expanded, the damping energy dissipation effect of the damper 50 is improved, and the multi-degree-of-freedom attitude stability is better.

[0116] Figure 29 The effect of the displacement amplification ratio of the two sections of the connecting rod 6 (the displacement amplification ratio of the two sections refers to the ratio of the length of the second section 62 to the length of the first section 61) on the stress-strain curve of the shape memory alloy damping wire 41 is shown. Among them, Figure 29 The middle line type 1 represents the stress-strain corresponding curve of the adjusted shape memory alloy damping wire with 1% pre-strain. Figure 29 The middle line type 2 represents the stress-strain corresponding curve of the adjusted shape memory alloy damping wire with 2% pre-strain. Figure 29 The middle line type 3 represents the stress-strain corresponding curve of the adjusted shape memory alloy damping wire with 3% pre-strain. Figure 29 The middle line type 4 represents the stress-strain corresponding curve of the adjusted shape memory alloy damping wire with 4% pre-strain. Figure 29 The middle line type 5 represents the stress-strain corresponding curve of the adjusted shape memory alloy damping wire with 5% pre-strain. Table 1 is a comparison table of the displacement amplification ratio of the two sections of the connecting rod 6 and the single-cycle energy dissipation of the shape memory alloy damping wire 41.

[0117] Table 1

[0118] Displacement amplification ratio of two sections of connecting rod 1:1 1:2 1:3 1:4 1:5 Single-cycle energy dissipation Wd (MJ / m 3 )]]> 4.1 9.2 13.7 17.2 25.1

[0119] In combination Figure 29 As can be seen from Table 1, when the displacement ratio of the two ends of the connecting rod 6 is increased from 1:1 to 1:5, the strain range on the shape memory alloy damping wire 41 is expanded from 1% to 5%, and the area enclosed by the hysteresis loop is also gradually increased. And the single-cycle energy consumption of the vibration isolation platform 10 is increased from 4.1 MJ / m 3 to 25.1 MJ / m 3Since the enclosed area of the hysteresis loop is proportional to the performance of the damper 50, the damping performance of the damper 50 can gradually increase with the increase of the displacement amplification ratio of the connecting rod 6. Therefore, the connecting rod 6 significantly improves the damping energy dissipation effect of the damper 50.

[0120] The above merely provides the specific implementation of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can easily think of the changes or replacements within the technical range disclosed by the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A damper, characterized in that, include: First fixed support and second fixed support; A support structure, wherein the support structure is connected to the first fixed support or the second fixed support; At least one damping structure, each of the damping structures comprising at least one shape memory alloy damping wire, the at least one shape memory alloy damping wire being connected to the first fixed support; Furthermore, in any of the damping structures, at least one shape memory alloy damping wire is wound around the support structure in opposite directions and connected to the second fixed support; At least one preload adjustment structure is provided, wherein the at least one preload adjustment structure is connected to the shape memory alloy damping wire in the at least one damping structure, and the preload adjustment structure is used to adjust the preload force of the shape memory alloy damping wire.

2. The damper according to claim 1, characterized in that, The damper includes: The plurality of damping structures, wherein the shape memory alloy damping wires in the plurality of damping structures are all connected to the first fixed support, and with the connection point as the center, the plurality of shape memory alloy damping wires are symmetrically wound outwards around the support structure.

3. The damper according to claim 1 or 2, characterized in that, The support structure is a connecting sleeve, one radial end of which is connected to the first fixed support and forms a mounting cavity with the first fixed support; the other radial end of the connecting sleeve has a mating hole; the damper further includes: A connecting rod, the middle part of which is movably installed in the mating hole, such that the first section of the connecting rod is disposed in the mounting cavity, and the second section of the connecting rod is located outside the connecting sleeve and movably connected to the second fixed support; the length of the first section is greater than the length of the second section; The shape memory alloy damping wire in at least one damping structure is wound around the connecting sleeve and connected to the portion of the connecting rod located inside the connecting sleeve.

4. The damper according to any one of claims 1-3, characterized in that, The pre-tightening adjustment structure is an adjusting bolt, which is connected to the first fixed support. The adjusting bolt has a radially extending winding hole, and the shape memory alloy damping wire is wound around the adjusting bolt radially through the winding hole.

5. The damper according to any one of claims 1-3, characterized in that, One of the damping structures includes a first shape memory alloy damping wire and a second shape memory alloy damping wire with opposite diffraction directions; The preload adjustment structure includes: A pre-tensioned spring assembly, comprising two pre-tensioned springs spaced apart from each other, one of which connects the first shape memory alloy damping wire to the first fixed support, and the other of which connects the second shape memory alloy damping wire to the first fixed support; An adjusting bolt connects two pre-tightening springs in the pre-tightening spring assembly.

6. A vibration isolation device, characterized in that, include: Vibration isolation platform; At least one set of dampers according to any one of claims 1-5, wherein the first fixed support of each of the at least one set of dampers is connected to the vibration isolation platform, and the second fixed support of each of the at least one set of dampers is used to connect to the fixed frame; each set of dampers includes two dampers, and the two dampers in the same set are symmetrically arranged along the vibration isolation platform; and the shape memory alloy damping wires in the same set of dampers have the same diffraction direction.

7. The vibration isolation device according to claim 6, characterized in that, The vibration isolation device also includes: A support frame is located above the vibration isolation platform; A first vibration isolator is used to connect the support frame and the fixed frame. The first vibration isolator is used to provide a buffering force for the support frame and the fixed frame to rotate in a first direction, rotate in a second direction, and move in a third direction. Any two of the first direction, the second direction, and the third direction are perpendicular to each other. The second vibration isolator is connected between the support frame and the vibration isolation platform; the second vibration isolator is used to provide a buffering force for the support frame and the vibration isolation platform to move along the first direction, move along the second direction, and rotate along the third direction.

8. The vibration isolation device according to claim 7, characterized in that, The first vibration isolation member includes a leaf spring structure, which comprises leaf springs stacked in a vertical direction.

9. The vibration isolation device according to claim 7 or 8, characterized in that, The second vibration isolator includes a flexible rod that extends in a vertical direction.

10. A semiconductor device, characterized in that, include: Fixed frame; The vibration isolation device according to any one of claims 6-9, wherein the second fixed support of the at least one set of dampers in the vibration isolation device is connected to the fixed frame.

11. The semiconductor device according to claim 10, characterized in that, The semiconductor device also includes: A motion mechanism is mounted on the fixed frame and is used to move the workpiece.

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