Optoelectronic device for acquiring multi-viewpoint images and / or displaying multi-viewpoint images

Abstract

The present invention relates to an optoelectronic device (10) for displaying and / or capturing multi-view images, comprising a support (12), an array of optoelectronic circuits (Pix) placed on the support, and a lens covering the optoelectronic circuits. Each optoelectronic circuit comprises N number of photosensitive sensors (25) suitable for capturing one or more pixels of an image of a scene from different viewpoints and / or N number of display circuits (30) suitable for displaying one or more pixels of an image of a scene from different viewpoints, wherein N is a natural number greater than or equal to 3.

Description

[0001] This patent application claims the benefit of priority from French patent application FR 18 / 73198, which is incorporated herein by reference. Technical Field

[0002] The present disclosure generally relates to optoelectronic devices for capturing images from multiple viewpoints and / or displaying images according to multiple viewpoints. Background Art

[0003] An example of a device for multi-view capture of film (with multiple viewpoints) comprises an array of microlenses arranged in front of a single camera comprising an array of light-sensitive sensors. Images of the scene from different viewpoints are then captured in an interlaced manner.

[0004] An example of a device for multi-view display of a film includes an interlaced array of display pixels. Images of a scene from different viewpoints are displayed in an interlaced manner.

[0005] A disadvantage of known multi-view image capture devices and multi-view image display devices is that once the resolution of the image to be captured or displayed is very high, the electrical connections of the display pixels capable of displaying interlaced images or the electrical connections of the photosensitive sensors capable of capturing interlaced images corresponding to different viewing angles become complicated.

[0006] Another disadvantage of multi-view image capture devices and multi-view image display devices is that images captured by the multi-view image capture device usually need to be processed to obtain images in a format suitable for their display on the multi-view image display device. Summary of the invention

[0007] Embodiments overcome all or part of the disadvantages of optoelectronic devices for multi-view image capture and / or multi-view image display.

[0008] The embodiment provides an optoelectronic device for multi-view capture and / or multi-view display of images, for which the electrical connection of image pixels capable of displaying interlaced images or the electrical connection of photosensitive sensors capable of acquiring interlaced images is simple.

[0009] An embodiment provides an optoelectronic multi-view image display and / or capture device, comprising a support, an optoelectronic circuit array resting on the support, and a lens covering the optoelectronic circuit, each optoelectronic circuit comprising N photosensitive sensors capable of capturing one pixel or multiple pixels of an image of a scene from different viewpoints and / or N display circuits capable of displaying one pixel or multiple pixels of an image of a scene from different viewpoints, where N is a natural number greater than or equal to 3.

[0010] According to an embodiment, each optoelectronic circuit comprises a number N of photosensitive sensors capable of capturing an image of a scene from different viewpoints and a number N of display circuits capable of displaying an image of the scene from different viewpoints.

[0011] According to an embodiment, the light-sensitive sensors and / or the display circuits are arranged in the form of an array.

[0012] According to an embodiment, each optoelectronic circuit comprises N display circuits and an integrated circuit attached to the support, the N display circuits being attached to the integrated circuit on a side of the integrated circuit opposite to the support.

[0013] According to an embodiment, an integrated circuit includes N light-sensitive sensors.

[0014] According to an embodiment, each display circuit comprises at least one light emitting diode.

[0015] According to an embodiment, each light-sensitive sensor comprises at least one photodiode.

[0016] According to an embodiment, each optoelectronic circuit is connected to less than 10 conductive tracks.

[0017] Embodiments also provide a method of manufacturing an optoelectronic device as previously defined.

[0018] According to an embodiment, each optoelectronic circuit comprises N display circuits and an integrated circuit attached to a support, the N display circuits being attached to the integrated circuit on a side of the integrated circuit opposite to the support, the method comprising the following successive steps:

[0019] a) forming a first wafer including a plurality of copies of an integrated circuit, and forming a second wafer including a plurality of copies of a display circuit;

[0020] b) attaching the second wafer to the first wafer;

[0021] c) separating the display circuit in the second wafer; and

[0022] d) separating the integrated circuits in the first wafer.

[0023] According to an embodiment, step d) is preceded by a step e) of attaching the display circuit to the handle.

[0024] According to an embodiment, the method comprises, between steps e) and d), a step of thinning the first wafer.

[0025] Embodiments also provide for the use of an optoelectronic device such as previously defined, comprising providing, by each optoelectronic circuit, first data representing pixels of an image captured by N photosensitive sensors of the optoelectronic circuit, and / or providing, to each optoelectronic circuit, second data representing pixels of an image to be displayed by N display circuits of the optoelectronic circuit.

[0026] According to an embodiment, the optoelectronic circuits are arranged in rows and columns and for each column at least one of the optoelectronic circuits of the column is capable of receiving a signal and at least partially transmitting the signal to another optoelectronic circuit of the column. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a simplified partial cross-sectional view of an embodiment of a multi-view image capture and projection apparatus;

[0028] Figure 2 yes Figure 1 A simplified top view of a portion of the optoelectronic device shown in FIG.

[0029] Figure 3 is a simplified diagram showing the operating principle of a multi-view image display screen;

[0030] Figure 4 yes Figure 1 and Figure 2 A simplified partial cross-sectional view of a more detailed embodiment of a multi-view image capture and projection device shown in;

[0031] Figure 5 yes Figure 1 and Figure 2 A simplified partial cross-sectional view of another more detailed embodiment of a multi-view image capture and projection device shown in;

[0032] Figure 6 yes Figure 1 and Figure 2 A simplified partial cross-sectional view of another more detailed embodiment of a multi-view image capture and projection device shown in;

[0033] Figure 7 Shown in the manufacture Figure 4 Simplified lateral partial cross-sectional view of the structure obtained at the successive steps of the method of an embodiment of an optoelectronic device shown in Figure 7 A to 7E;

[0034] Figure 8 Shown in the manufacture Figure 4 A simplified lateral partial cross-sectional view of the structure obtained at the subsequent consecutive steps of an embodiment of the method of an optoelectronic device shown in Figure 8 A to 8D;

[0035] Fig. 9 Shown in the manufacture Figure 4 A simplified lateral partial cross-sectional view of the structure obtained at the subsequent consecutive steps of an embodiment of the method of an optoelectronic device shown in Fig. 9 A to 9C;

[0036] Fig.10 It is shown Figure 1 and Figure 2 A diagram of an embodiment of electrical connections between pixels of an optoelectronic device shown in;

[0037] Fig.11 It shows the control Fig.10 FIGURES of an embodiment of a method for a pixel of an optoelectronic device shown in FIG;

[0038] Fig.12 It shows the control Fig.10 FIG. 10 is a diagram of another embodiment of a method for a pixel of an optoelectronic device shown in FIG. 10 ;

[0039] Fig.13 It shows the control Fig.10 FIG. 10 is a diagram of another embodiment of a method for a pixel of an optoelectronic device shown in FIG. 10 ;

[0040] Fig.14 The block diagram shows Figure 1 and Figure 2 An embodiment of a pixel of the device shown in; and

[0041] Fig.15 Shows the control Figure 1 and 2 An embodiment of a method for displaying pixels of a device is shown. DETAILED DESCRIPTION

[0042] In different drawings, the same elements are referred to by the same reference numerals. In particular, the common structural and / or functional elements of different embodiments may be referred to by the same reference numerals and may have the same structure, size and material properties.

[0043] For the sake of clarity, only those steps and elements useful for understanding the described embodiments are shown and described in detail. In particular, the structure of a light emitting diode is well known to those skilled in the art and is not described in detail.

[0044] Unless otherwise stated, the term "connected" is used to refer to a direct electrical connection between circuit elements without intervening elements other than conductors, while the term "coupled" is used to refer to an electrical connection between circuit elements that may be direct or may be via one or more other elements.

[0045] In the following description, when reference is made to terms defining absolute positions (such as terms "front", "rear", "top", "bottom", "left", "right", etc.) or relative positions (such as terms "above", "below", "upper", "lower", etc.), or to terms defining directions (such as terms "horizontal", "vertical", etc.), it refers to the orientation of the drawing or to the optoelectronic device in a normal position of use.

[0046] Unless otherwise stated, the terms "about", "approximately", "substantially" and "on the order of..." are used herein to refer to a tolerance of plus or minus 10%, preferably a tolerance of plus or minus 5%, of the value in question. Further, an "active region" or "active layer" of a light emitting diode refers to the region of the light emitting diode from which most of the electromagnetic radiation provided by the light emitting diode is emitted. Further, a signal that alternates between a first constant state (e.g., a low state denoted "0") and a second constant state (e.g., a high state denoted "1") is referred to as a "binary signal". The high and low states of different binary signals of the same electronic circuit may be different. In particular, a binary signal may correspond to a voltage or current that may not be completely constant in the high or low state. In the following description, a transparent layer is a layer that is transparent to radiation emitted by an optoelectronic device or radiation detected by an optoelectronic device.

[0047] A pixel of an image corresponds to a unit element of an image displayed by a display optoelectronic device. When the optoelectronic device is a color image display screen, for the display of each pixel of an image, it generally comprises at least three components (also referred to as display sub-pixels), each of which emits light radiation substantially in a single color (e.g., red, green, and blue). The superposition of the radiation emitted by the three display sub-pixels provides the observer with a color perception corresponding to the pixel of the displayed image. In this case, the assembly formed by the three display sub-pixels for displaying a pixel of an image is referred to as a display pixel of the optoelectronic device.

[0048] Figure 1 and Figure 2 An embodiment of an optoelectronic multi-view image capture and display device 10 is shown, which includes display and capture pixels, Figure 1 Four display and capture pixels are shown in Figure 2 Twelve display and capture pixels are shown in . Figure 1 yes Figure 2 A cross section along line II-II, and Figure 2 yes Figure 1 Top view of the .

[0049] Device 10 Figure 1 From bottom to top it includes:

[0050] - a support 12 comprising opposite, preferably parallel, lower and upper surfaces 14 and 16;

[0051] - display and capture pixels Pix, also referred to hereinafter as display and capture pixel circuits, are placed on the upper surface 16, for example distributed in rows and columns, Figure 2 Three rows and four columns are shown; and

[0052] -Microlens 18( Figure 2(not shown in the figure), the microlens covers the pixel Pix.

[0053] The microlens 18 may be a cylindrical or spherical microlens, and each microlens 18, for example, covers a pixel column Pix, two adjacent pixel columns Pix, or more than two adjacent pixel columns Pix. Preferably, each microlens 18 is a cylindrical lens covering a pixel column Pix or two adjacent pixel columns Pix. As a variation, each microlens 18 may only cover a group of adjacent pixels Pix in the same column, two adjacent columns, or more than two adjacent columns. According to an embodiment, each microlens 18 covers a single pixel Pix.

[0054] Each pixel Pix Figure 1 From bottom to top it includes:

[0055] - a first optoelectronic circuit 20, hereinafter referred to as control and capture circuit, comprising a lower surface 22 facing the support 12 and an upper surface 24 opposite to the lower surface 22, the surfaces 22, 24 preferably being parallel, the control and capture circuit 20 comprising, on the upper surface side, light-sensitive sensors 25, each light-sensitive sensor 25 comprising, for example, a photodiode or a photoresistor, Figure 2 Each pixel Pix shows four light-sensitive sensors 25; and - a second optoelectronic circuit 30, hereinafter referred to as a display circuit, which is attached to the upper surface 24 of the control and capture circuit 20, Figure 2 Each pixel Pix shows four display pixels 30 , each display circuit 30 includes a light source (not shown), and the display circuit 30 may be integrated in a single optoelectronic circuit.

[0056] According to an embodiment, each pixel Pix comprises an array of elementary pixels EPix, each elementary pixel EPix comprising a display circuit 30 for displaying a pixel of an image of a scene according to a given viewpoint and a photosensitive sensor 25 for capturing a pixel of an image of the scene according to the same viewpoint. For each pixel Pix, the elementary pixels EPix of the pixel Pix are associated with different viewpoints. According to an embodiment, each pixel Pix comprises an array of at least two rows and at least two columns of elementary pixels EPix, preferably an array of at least five columns and at least five rows of elementary pixels.

[0057] Figure 3 is a top view showing very schematically the operating principle of an optoelectronic device 10 for automatic multi-view display of images. Images of a scene from different viewpoints are displayed by the optoelectronic device 10 in an interlaced manner. Figure 3A row of pixels Pix is ​​schematically shown, in which the display circuit of the first elementary pixel EPix1 shaded in the first direction displays the pixel of the image according to the first viewpoint, and the display circuit of the second elementary pixel EPix2 shaded in the second direction displays the pixel of the image according to the second viewpoint. The microlens 18 is configured and arranged so that when the observer is in a given position relative to the optoelectronic device 10, the light emitted by the display circuit of the first elementary pixel EPix1 reaches only the left eye of the observer, and the light emitted by the display circuit of the second elementary pixel EPix2 reaches only the right eye of the observer. The three-dimensional effect is then perceived by the observer. In fact, images corresponding to more than two viewpoints can be displayed simultaneously in an interlaced manner, so that the observer continues to perceive the three-dimensional image while moving relative to the optoelectronic device 10.

[0058] During the step of capturing an image of a scene, the light-sensitive sensors of the elementary pixels of the pixel Pix are activated. The layout and configuration of the microlenses 18 result in the simultaneous capture of images of the same scene from different viewpoints by the light-sensitive sensors of the elementary pixels in the pixel Pix. Figure 3 , the light detected by the photosensitive sensor of the first basic pixel EPix1 corresponds to the pixel of the image of the scene according to the first viewpoint, and the light detected by the photosensitive sensor of the second basic pixel EPix2 corresponds to the pixel of the image of the scene according to the second viewpoint.

[0059] An advantage of the optoelectronic device 10 is that images captured by the optoelectronic device 10 at multiple viewing angles can be simply displayed by the same optoelectronic device 10 or an optoelectronic device having the same structure. In fact, no processing is provided by the optoelectronic device 10 for displaying images captured by the same optoelectronic device 10 at multiple viewing angles, and the signals delivered by the basic pixels of each pixel for multi-view image capture can be delivered directly to the same basic pixels for multi-view image display. Without using exactly the same device, the data captured by the device 10 can be displayed by any screen that operates by displaying different viewing angles.

[0060] Another advantage of the optoelectronic device 10 is that the field of view that can be captured by the optoelectronic device can be large.

[0061] According to an embodiment, during the multi-view display of a film, the light-sensitive sensor 25 can further be used to determine the position of the eyes of an observer who is viewing the image displayed in multi-view. This can be used to adjust the image displayed in multi-view by taking into account the position of the observer's eyes, so that, for example, only the display circuit 30 that emits light toward the observer's eyes is activated. This makes it possible to limit the data flow to be processed / sent and thus reduce power consumption.

[0062] According to an embodiment, when an image captured by the device 10 in multiple perspectives is to be displayed on a display screen not suitable for multiple perspective image display, the image may be displayed without relief, with the possibility of adjusting the image focus.

[0063] According to an embodiment, each display circuit 30 comprises at least one light emitting diode. In the case where each display circuit 30 comprises two light emitting diodes or more than two light emitting diodes, the active areas of all light emitting diodes of the display circuit 30 preferably emit light radiation at substantially the same wavelength.

[0064] Each light-emitting diode may correspond to a so-called two-dimensional light-emitting diode, which comprises a stack of substantially planar semiconductor layers including an active region. Each light-emitting diode may comprise at least one three-dimensional light-emitting diode having a radial structure, the radial structure comprising a semiconductor shell covering a three-dimensional semiconductor element, in particular a microwire, a nanowire, a cone, a frustum, a pyramid or a truncated pyramid, the shell being formed by a stack of non-planar semiconductor layers including an active region. Examples of such light-emitting diodes are described in patent applications US2014 / 0077151 and US2016 / 0218240. Each light-emitting diode may comprise at least one three-dimensional light-emitting diode having an axial structure, in which the shell is located in the axial extension of the semiconductor element.

[0065] For each pixel Pix, the display circuit 30, which may be integrated in a single display circuit, may be attached to the control and capture circuit 20 by direct bonding, for example by heterogeneous molecular bonding. This connection ensures the mechanical connection between each display circuit 30 and the control and capture circuit 20, and further ensures the electrical connection of the light-emitting diode or diodes of the display circuit 30 with the control and capture circuit 20. As a variant, the display circuit or circuits 30 may be attached to the control and capture circuit 20 by a “flip chip” type connection. Fusible conductive elements, such as solder balls or indium balls, may couple each display circuit 30 to the control and capture circuit 20.

[0066] According to an embodiment, each basic pixel EPix is ​​capable of emitting a first radiation at a first wavelength and a second radiation at a second wavelength. According to an embodiment, each basic pixel EPix is ​​also capable of emitting a third radiation at a third wavelength. The first, second and third wavelengths may be different. According to an embodiment, the first wavelength corresponds to blue light and is in the range from 430nm to 490nm. According to an embodiment, the second wavelength corresponds to green light and is in the range from 510nm to 570nm. According to an embodiment, the third wavelength corresponds to red light and is in the range from 600nm to 720nm.

[0067] According to an embodiment, each elementary pixel EPix is ​​also capable of emitting a fourth radiation at a fourth wavelength. The first, second, third and fourth wavelengths may be different. According to an embodiment, the fourth wavelength corresponds to yellow light and is in the range from 570nm to 600nm. According to another embodiment, the fourth radiation corresponds to radiation in the near infrared (in particular radiation at a wavelength between 700nm and 980nm), to ultraviolet radiation, or to white light.

[0068] According to an embodiment, each basic pixel EPix is ​​capable of detecting a fifth radiation at a fifth wavelength and a sixth radiation at a sixth wavelength. According to an embodiment, each basic pixel EPix is ​​also capable of detecting a seventh radiation at a seventh wavelength. The fifth, sixth and seventh wavelengths may be different. According to an embodiment, the fifth wavelength corresponds to the first wavelength previously described, i.e., to blue light in the range from 430nm to 490nm. According to an embodiment, the sixth wavelength corresponds to the second wavelength previously described, i.e., to green light in the range from 510nm to 570nm. According to an embodiment, the seventh wavelength corresponds to the third wavelength previously described, i.e., to red light in the range from 600nm to 720nm.

[0069] According to an embodiment, each elementary pixel EPix is ​​also capable of detecting an eighth radiation at an eighth wavelength. The fifth, sixth, seventh and eighth wavelengths may be different. According to an embodiment, the eighth wavelength corresponds to the aforementioned fourth wavelength, i.e. to yellow light in the range from 570nm to 600nm, to radiation in the near infrared (in particular radiation at a wavelength between 700nm and 980nm), or to ultraviolet radiation.

[0070] Figure 4 yes Figure 1 and Figure 2 A simplified partial cross-sectional view of a more detailed embodiment of a multi-view image capture and display device 10 is shown in FIG. Figure 4 From bottom to top it includes:

[0071] - a support 12;

[0072] - an electrode 32 made of a conductive material, which rests on the upper surface 16, Figure 4 Four electrodes 32 are shown for each pixel Pix;

[0073] a pixel Pix resting on and in contact with the electrode 32, Figure 4 Two pixels Pix are shown, each pixel Pix includes two basic pixels EPix;

[0074] an electrically insulating encapsulating layer 34 covering the supports 12 between the pixels Pix and covering the pixels Pix; and

[0075] -Microlenses 18.

[0076] Generally, each pixel Pix may include more than two basic pixels EPix. According to an embodiment, the basic pixels EPix have substantially the same structure, and each basic pixel EPix includes a display circuit 30 and a part of the control and capture circuit 20 , in particular including a photosensitive sensor 25 .

[0077] For each pixel Pix, the lower surface 22 of the control and capture circuit 20 is attached to the electrode 32 and is defined, for example, by a conductive pad 36 electrically coupled to the electrode 32. The control and capture circuit 20 also includes a conductive pad 38 on the upper surface side 24. The conductive pads 38 may be laterally separated by an electrically insulating layer 39. For each elementary pixel EPix, the control and capture circuit 20 also includes a photosensitive sensor 25 on the side of the upper surface 24, each photosensitive sensor 25 preferably including at least three photodiodes PH. The control and capture circuit 20 also includes a transistor (not shown) on the side of the upper surface 24. The control and capture circuit 20 includes a through conductive via 40 that couples the conductive pad 36 to a semiconductor region of the control and capture circuit located on the side of the upper surface 24 or to some of the pads 38. As an example, Figure 4 A first through-hole 40 coupling one of the pads 36 to the photodiode PH and a second through-hole 40 coupling the other pad 36 to one of the pads 38 are shown for each elementary pixel EPix.

[0078] For each elementary pixel EPix, a display circuit 30 is attached to the upper surface 24 of the control and capture circuit 20 of the pixel Pix. Each display circuit 30 comprises a stack 42 of semiconductor layers forming a light emitting diode LED, preferably at least three light emitting diodes. Each display circuit 30 is electrically coupled to the control and capture circuit 20 by means of a conductive pad 44 in contact with a conductive pad 38. Each display circuit 30 comprises a photoluminescent block 46 covering the light emitting diode on the side opposite to the control and capture circuit 20 and separated laterally by a wall 48. Preferably, each photoluminescent block 46 is located opposite to one of the light emitting diodes. Figure 4 In the figure, the light emitting diode LED and the photoluminescent block 46 of each basic pixel EPix are shown in an aligned manner. However, it should be clear that the layout of the light emitting diode and the photoluminescent block 46 can be different. As an example, each display circuit 30 can include four light emitting diodes, which are distributed at the corners of a square in a top view.

[0079] In this embodiment, each light emitting diode LED corresponds to a so called two-dimensional light emitting diode comprising a stack of substantially planar semiconductor layers comprising an active area.According to an embodiment, all light emitting diodes LED of an elementary pixel EPix preferably emit light radiation substantially at the same wavelength.

[0080] More specifically, for each light emitting diode LED, the stack 42 comprises a doped semiconductor layer 50 of a first conductivity type, for example P-type doping, in contact with a conductive pad 44; an active layer 52 in contact with the semiconductor layer 50; and a doped semiconductor layer 54 of a second conductivity type opposite to the first conductivity type, for example N-type doping, in contact with the active layer 52. The display circuit 30 also comprises a semiconductor layer 56 in contact with the semiconductor layer 52 of all light emitting diodes LED and having a wall 48 and a photoluminescent block 46 resting thereon. The semiconductor layer 56 is made of the same material as the semiconductor layer 54, for example. According to an embodiment, for each light emitting diode LED, each display circuit 30 comprises a conductive pad 44 coupling the semiconductor layer 50 of the light emitting diode LED to the control and capture circuit 20, and at least one conductive pad 44 coupling the semiconductor layer 56 directly to the control and capture circuit 20.

[0081] For each light emitting diode LED, the active layer 52 may include a confinement device. As an example, the active layer 52 may include a single quantum well. Then, it includes a semiconductor material that is different from the semiconductor material forming the semiconductor layers 50 and 54 and has a band gap that is smaller than the band gap of the material forming the semiconductor layers 50 and 54. The active layer 52 may include a plurality of quantum wells. Then, it includes a stack of alternating semiconductor layers forming quantum wells and barrier layers.

[0082] According to an embodiment, each photoluminescent block 46 is located opposite to one of the light emitting diodes LED. Each photoluminescent block 46 comprises light emitters which, when they are excited by the light emitted by the associated light emitting diode LED, are capable of emitting light at a wavelength different from the wavelength of the light emitted by the associated light emitting diode LED. According to an embodiment, each pixel Pix comprises at least two types of photoluminescent blocks 46. The photoluminescent blocks 46 of the first type are capable of converting the radiation supplied by the light emitting diode LED to emit radiation at a first wavelength, and the photoluminescent blocks 46 of the second type are capable of converting the radiation supplied by the light emitting diode LED to emit radiation at a second wavelength. According to an embodiment, each pixel Pix comprises at least three types of photoluminescent blocks 46, the third type of photoluminescent blocks 46 being capable of converting the radiation supplied by the light emitting diode LED to emit third radiation at a third wavelength.

[0083] The control and capture circuit 20 of the pixel Pix may include electronic components (including a photodiode PH), and transistors (not shown) of the light emitting diode LED and the photodiode PH of the basic pixel EPix of the pixel Pix, in particular. Each control and capture circuit 20 may include a semiconductor substrate in which electronic components are formed inside and / or on top. Then, the lower surface 22 of the control and capture circuit 20 may correspond to the back side of the substrate opposite to the front side 24 of the substrate, on which the electronic components are formed. The semiconductor substrate is, for example, a substrate made of silicon, in particular single crystal silicon. The structure of the photodiode is well known to those skilled in the art and will not be described in detail below.

[0084] According to an embodiment, the display circuit 30 includes only light emitting diodes and connecting elements of the light emitting diodes, and the control and capture circuit 20 includes all electronic components required to control the light emitting diodes of the display circuit 30. According to another embodiment, the display circuit 30 may also include other electronic components in addition to the light emitting diodes.

[0085] The optoelectronic device 10 may include 10 to 10 9 Pixels Pix. Each pixel Pix may occupy a surface area in a range from 1 μm2 to 100 mm2 in a top view. The thickness of each pixel Pix may be in a range from 1 μm to 6 mm. The thickness of each control and capture circuit 20 may be in a range from 0.5 μm to 3000 μm. The thickness of each display circuit 30 may be in a range from 0.2 μm to 3000 μm.

[0086] In the present embodiment, all electrical connections of the pixel Pix to the outside are formed on the lower surface side 22 of the control and capture circuit 20. Therefore, the number of electrodes 32 depends on the number of electrical connections to the outside required for the operation of the pixel Pix.

[0087] The microlens 18 may correspond to a cylindrical lens, such as a plano-convex lens, or to a spherical plano-convex lens. According to an embodiment, the pixels Pix may be arranged so that each pixel Pix is ​​substantially located in the focal plane of the microlens 18 associated therewith. According to an embodiment, each pixel Pix is ​​substantially centered on the focus of the microlens 18 associated therewith. As a variant, the relative position between the pixel Pix and the microlens 18 associated therewith may vary depending on the pixel position in the pixel array of the optoelectronic device. In particular, even if the pixel Pix is ​​substantially arranged in the focal plane of the microlens 18 associated therewith, an interval between the position of the pixel Pix and the focus of the microlens 18 may be provided, which interval increases, for example, as the distance to the center of the optoelectronic device 10 increases. This interval will enable emission / collection according to different angles.

[0088] The support 12 may be made of an electrically insulating material, such as a polymer, in particular epoxy resin, and in particular FR4 material for making printed circuits, or a metallic material, such as aluminum. The thickness of the support 12 may be in the range from 10 μm to 10 mm.

[0089] Each electrode 32 preferably corresponds to a metal strip, for example made of aluminum, silver, copper or zinc. The thickness of each electrode 32 may range from 0.5 μm to 1000 μm.

[0090] The insulating layer 39 may be made of a dielectric material, such as silicon oxide (SiO2), silicon nitride (Si x N y , wherein x is approximately equal to 3 and y is approximately equal to 4, such as Si3N4), silicon oxynitride (SiO x N y , x may be approximately equal to 1 / 2, and y may be approximately equal to 1, such as Si2ON2), made of aluminum oxide (Al2O3), or made of hafnium oxide (HfO2). The thickness of the insulating layer 39 may be in the range from 0.2 μm to 1000 μm.

[0091] Each conductive pad 36 , 38 , 44 may be made at least partially of a material selected from the group consisting of, for example, copper, titanium, nickel, gold, tin, aluminum, and alloys of at least two of these compounds.

[0092] The semiconductor layers 50, 54, 56 and the layer forming the active layer 52 are at least partially made of at least one semiconductor material. The semiconductor material is selected from a group including III-V compounds (e.g., III-N compounds), II-VI compounds, or IV semiconductors or compounds. Examples of III-group elements include gallium (Ga), indium (In), or aluminum (Al). Examples of III-N compounds are GaN, AlN, InN, InGaN, AlGaN, or AlInGaN. Other V-group elements, such as phosphorus or arsenic, may also be used. Examples of II-group elements include IIA-group elements (particularly beryllium (Be) and magnesium (Mg)) and IIB-group elements (particularly zinc (Zn), cadmium (Cd), and mercury (Hg)). Examples of VI-group elements include VIA-group elements, particularly oxygen (O) and tellurium (Te). Examples of II-VI-group compounds are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe, or HgTe. Examples of Group IV semiconductor materials are silicon (Si), carbon (C), germanium (Ge), silicon carbide alloy (SiC), silicon germanium alloy (SiGe), or germanium carbide alloy (GeC).

[0093] According to an embodiment, each photoluminescent block 46 includes particles of at least one photoluminescent material. An example of a photoluminescent material is yttrium aluminum garnet (YAG) activated by trivalent cerium ions, also referred to as YAG:Ce or YAG:Ce. 3+ The average size of particles of conventional photoluminescent materials is usually larger than 5 μm.

[0094] According to an embodiment, each photoluminescent block 46 comprises a matrix having nanometer-range single-crystalline particles of semiconductor material dispersed therein, also referred to hereinafter as semiconductor nanocrystals or nanoluminescent particles. The internal quantum efficiency QY int It is equal to the ratio of the number of photons emitted to the number of photons absorbed by the photoluminescent substance. The internal quantum efficiency QY of a semiconductor nanocrystal int The average size of the nanocrystals is preferably in the range of 0.5 nm to 1000 nm, preferably 0.5 nm to 500 nm, more preferably 1 nm to 100 nm, in particular 2 nm to 30 nm. For sizes less than 50 nm, the light conversion properties of semiconductor nanocrystals depend essentially on the phenomenon of quantum confinement. Semiconductor nanocrystals then correspond to quantum dots.

[0095] According to an embodiment, the semiconductor material of the semiconductor crystal is selected from the group including: cadmium selenide (CdSe), indium phosphide (InP), cadmium sulfide (CdS), zinc sulfide (ZnS), zinc selenide (ZnSe), cadmium telluride (CdTe), zinc telluride (ZnTe), cadmium oxide (CdO), cadmium zinc oxide (ZnCdO), cadmium zinc sulfide (CdZnS), cadmium zinc selenide (CdZnSe), silver indium sulfide (AgInS2), PbScX3 type perovskite (wherein X is a halogen atom, in particular iodine (I), bromine (Br) or chlorine (Cl)) or a mixture of at least two of these compounds. According to an embodiment, the semiconductor material of the semiconductor nanocrystal is selected from the materials mentioned in the publication of Le Blevenec et al., PhysicaStatus Solidi (RRL)-Rapid Research Letters Volume 8, No.4, pages 349-352, April 2014.

[0096] According to an embodiment, the size of the semiconductor nanocrystals is selected according to the desired wavelength of the radiation emitted by the semiconductor nanocrystals. For example, CdSe nanocrystals with an average size of the order of 3.6 nm can convert blue light into red light, and CdSe nanocrystals with an average size of the order of 1.3 nm can convert blue light into green light. According to another embodiment, the composition of the semiconductor nanocrystals is selected according to the desired wavelength of the radiation emitted by the semiconductor nanocrystals.

[0097] The matrix is ​​made of an at least partially transparent material. The matrix is ​​for example made of silicon dioxide. The matrix is ​​for example made of any at least partially transparent polymer, in particular of silicone or of polylactic acid (PLA). The matrix can be made of an at least partially transparent polymer used with a 3D printer, such as PLA. According to an embodiment, the matrix contains from 2% to 90%, preferably from 10wt.% to 60wt.% of nanocrystals, for example about 30wt.% of nanocrystals.

[0098] The thickness of the photoluminescent blocks 46 depends on the nanocrystal concentration and on the type of nanocrystals used. The height of the photoluminescent blocks 46 is preferably less than or equal to the height of the walls 48. In top view, the area of ​​each photoluminescent block 46 may correspond to the area of ​​a square with a side length from 1 μm to 100 μm, preferably from 3 μm to 15 μm.

[0099] According to an embodiment, the wall 48 is at least partially made of at least one conductive or insulating semiconductor material. The semiconductor or metal conductor material can be silicon, germanium, silicon carbide, III-V compounds, II-VI compounds, steel, iron, copper, aluminum, tungsten, titanium, hafnium, zirconium, silver, rhodium or a combination of at least two of these compounds. According to an embodiment, the wall 48 is made of a reflective material. Preferably, the wall 48 is made of a semiconductor material compatible with the manufacturing method implemented in microelectronics. The wall 48 can be heavily doped, lightly doped or undoped. Preferably, the wall 48 is made of single crystal silicon. The height of the wall 48 measured in a direction perpendicular to the surface 22 is in the range of from 300nm to 200μm, preferably from 5μm to 30μm. The thickness of the wall 48 measured in a direction parallel to the surface 22 is in the range of from 100nm to 50μm, preferably 0.5μm to 10μm. According to an embodiment, the wall 48 can be made of a reflective material or covered with a coating that is reflective at the wavelength of radiation emitted by the photoluminescent blocks 46 and / or the light emitting diodes LED. Preferably, the wall 48 surrounds the photoluminescent blocks 46. The wall 48 then reduces crosstalk between adjacent photoluminescent blocks 46.

[0100] The encapsulation layer 34 may be made of an at least partially transparent insulating material. The encapsulation layer 34 may be made of an at least partially transparent inorganic material. As an example, the inorganic material is selected from the group consisting of: SiOx type silicon oxide (where x is a real number between 1 and 2), or SiOyNz (where y and z are real numbers between 0 and 1), and aluminum oxide (e.g., Al2O3). The encapsulation layer 34 may be made of an at least partially transparent organic material. As an example, the encapsulation layer 34 is a silicone polymer, an epoxy polymer, an acrylic polymer, or a polycarbonate.

[0101] The microlens 18 may be made of silicon oxide, silicone resin, polymethyl methacrylate (PMMA) or transparent resin. The maximum thickness of each microlens 18 may be in the range from 10 μm to 10 mm. The width of each microlens 18 may vary from 10 μm to 10 mm.

[0102] Figure 5 is a side view of another more detailed embodiment of the optoelectronic device 10. In this embodiment, the optoelectronic device 10 includes a front surface combined with Figure 4 All elements of the described embodiment are shown, except that, for each display circuit 30, the polarization of the semiconductor layer 56 is performed via the wall 48. In this embodiment, the encapsulation layer 34 extends between the pixels Pix, but does not completely cover the pixels Pix. The optoelectronic device 10 also includes a conductive strip 60 ( Figure 5 4 and 5). A single strip is shown in FIG. 4 ), thereby forming an electrode that is at least partially transparent to the radiation emitted by the light emitting diode LED and covers the pixels Pix and the encapsulation layer 34 between the pixels Pix. As an example, each conductive strip 60 is in contact with the pixels Pix of the same column or the same row. For each display circuit 30, the wall 48 is conductive. The wall 48 is in contact with the stack 42 and with the conductive strip 60 covering the pixel Pix. This makes it possible to polarize the semiconductor layer 56 of the stack 42, and the semiconductor region of the control and capture circuit 20 that is electrically coupled to the semiconductor layer 56 through the pad 44 is electrically polarized by the conductive strip 60 covering the pixel Pix.

[0103] Each conductive strip 60 is capable of passing electromagnetic radiation emitted by the display circuit 30 and passing electromagnetic radiation detected by the photosensitive sensor 25. The material forming each conductive strip 60 may be a transparent conductive material such as indium tin oxide (ITO), aluminum or gallium zinc oxide, or graphene. The minimum thickness of the conductive strip 60 on the pixel Pix may be in the range of 0.05 μm to 1000 μm.

[0104] According to an embodiment, a metal grid may be formed above and in contact with each transparent conductive strip 60, with the pixel Pix being located at the level of the opening of the metal grid. This enables improved conduction without hindering radiation emitted and received by the pixel Pix.

[0105] Figure 6 is a side view of another more detailed embodiment of the optoelectronic device 10. In this embodiment, the optoelectronic device 10 includes the previously combined Figure 5The present invention also includes all elements of the embodiment described above, and also includes an electrically insulating layer 62 covering the sides of the pixels Pix, in particular the sides of the control and capture circuit 20 and the sides of each display circuit 30. The minimum thickness of the insulating layer 62 can be in the range from 2nm to 1mm. The insulating layer 62 can be made of one of the materials described above for the insulating layer 39. In addition to covering the upper surface of each pixel Pix, each conductive strip 60 can also cover a portion of the insulating layer 62 of the pixel Pix.

[0106] Figure 5 and Figure 6 An advantage of the embodiments shown in is that they enable a reduction in the number of externally facing electrical connections on the lower surface side 24 of the control and capture circuit 20 of each pixel Pix.

[0107] Figure 7 Shown in the manufacture Figure 4 A simplified side cross-sectional view of a part of the structure obtained at the successive steps of the method of an embodiment of an optoelectronic device 10 is shown in Figure 7 A to 7E.

[0108] See Figure 7 A shows the structure obtained after forming a stack 71 of semiconductor layers on a support 70. Figure 7 From bottom to top in A, it includes a semiconductor layer 72, an active layer 74 and a semiconductor layer 76. The semiconductor layer 72 may have the same composition as the aforementioned semiconductor layers 54 and 56. The active layer 74 may have the same composition as the aforementioned active layer 52. The semiconductor layer 76 may have the same composition as the aforementioned semiconductor layer 50. A seed layer may be provided between the support member 70 and the semiconductor layer 72. Preferably, there is no seed layer between the support member 70 and the semiconductor layer 72.

[0109] See Figure 7 B shows the structure obtained after defining the light emitting diode LED of the display circuit 30 and forming the conductive pad 44. For each light emitting diode LED of each optoelectronic circuit 30, the light emitting diode LED can be defined by etching the semiconductor layer 72, the active layer 74 and the semiconductor layer 76 to define the semiconductor layer 54, the active layer 52 and the semiconductor layer 50. The etching implemented can be dry etching (for example, using chlorine and fluorine-based plasma), reactive ion etching (RIE). The unetched portion of the semiconductor layer 72 forms the aforementioned semiconductor layer 56. The conductive pad 44 can be obtained by depositing a conductive layer on the entire obtained structure and by removing the portion of the conductive layer outside the conductive pad 44. The optoelectronic circuit 78 including multiple copies (not yet completed) of the display circuit 30 is obtained, and it is shown in FIG. Figure 7 Two copies are shown in B.

[0110] See Figure 7 C shows the structure obtained after manufacturing the optoelectronic circuit 80 (which includes multiple copies (not completely completed) of the desired control and capture circuit 20, in particular through conventional steps of integrated circuit manufacturing methods) and immediately before attaching the optoelectronic circuit 80 to the optoelectronic circuit 78. Once completed, the substrate of the optoelectronic circuit 78 is thicker than the substrate of the control and capture circuit 20. However, each copy (not completely completed) of the desired control and capture circuit 20 includes a transistor (not shown), a photosensitive sensor 25, a conductive pad 38 and an insulating layer 39. In addition, the optoelectronic circuit 78 does not include a through-conductive via 40. The method of assembling the electronic circuit 80 to the optoelectronic circuit 78 may include a welding or molecular bonding operation.

[0111] See Figure 7 D shows the structure obtained after forming the wall 48 in the support 70 and after separating the display circuit 30. The wall 48 may be formed by etching the opening 82 in the support 70. The display circuit 30 may be separated by etching the semiconductor layer 56.

[0112] Figure 7 E shows the structure obtained after forming the photoluminescent blocks 46 and possibly forming an insulating layer 84 on the sides of the display circuit 30. The photoluminescent blocks 46 can be formed by filling certain openings 82 with a colloidal dispersion of semiconductor nanocrystals in a bonded array, for example, by a so-called additive process and possibly by plugging certain openings 82 with a resin. The so-called additive process can include printing the colloidal dispersion directly at the desired location, for example by inkjet printing, aerosol printing, microprinting, gravure printing, screen printing, flexographic printing, spraying or drop casting. According to another embodiment, the photoluminescent blocks 46 can be formed before the walls 48 are formed.

[0113] Figure 8 It is shown that in the previous Figure 7 A simplified side cross-sectional view of a part of the structure obtained at the subsequent consecutive steps of the described manufacturing method Figure 8 A to 8D.

[0114] Figure 8 A shows the use of bonding material 88 to Figure 7 The structure shown in E is the structure obtained after the photoluminescent block 46 is attached to a support 86 (also called a handle) on the side.

[0115] See Figure 8 B shows the structure obtained after the substrate of the electronic circuit 80 has been thinned on the side opposite to the handle 86 and the conductive vias 40 have been formed in the substrate.

[0116] See Figure 8C shows the structure obtained after forming the conductive pads 36 of the control and capture circuit 20 (not yet completed) on the electronic circuit 80 on the side opposite to the handle 86 .

[0117] See Figure 8 D shows the structure obtained after separating the control and capture circuits 20 in the electronic circuit 80. Figure 8 A single control and capture circuit is shown in D. The pixel Pix is ​​thus defined while remaining attached to the handle 86.

[0118] Fig. 9 It is shown that in the previous Figure 8 A simplified side cross-sectional view of a part of the structure obtained at the subsequent consecutive steps of the described manufacturing method Fig. 9 A to 9C.

[0119] See Fig. 9 A shows the structure obtained after attaching some of the display pixels Pix to the support 12. In the present embodiment, two pixels attached to the handle 86 have been shown, and the electrodes 32 associated with the pixels Pix on the support 12 have been shown. The pixels Pix that are not in contact with the electrodes 32 are not attached to the support 12. As an example, each pixel Pix can be attached to the electrode 32 by molecular bonding of the conductive pad 36 to the electrode 32 or via a bonding material, in particular a conductive epoxy glue.

[0120] See Fig. 9 B shows the structure obtained after separating the handle 86 from the pixel Pix attached to the support 12. This separation can be performed by laser ablation. Fig. 9 The embodiment shown in A and 9B enables a plurality of pixels Pix to be attached to the support 12 at the same time. Fig. 9 After the step shown in B, the pixels Pix can be separated from the handle 86 and a “pick and place” method can be implemented, consisting in placing each pixel Pix separately on the support 12 .

[0121] See Fig. 9 C shows the structure obtained after forming the encapsulation layer 34 and the microlens 18. The encapsulation layer 34 can be deposited by chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or cathode sputtering. The microlens 18 can be formed by aligning and laminating the film of the microlens after the wafer to which the pixels have been transferred has been planarized. Etching of a transparent planarizing resin, 3D printing, or printing of a pattern from a hard material can also be used.

[0122] Fig.10 It is shown Figure 1 and Figure 2 An embodiment of the electrical connections between the pixels Pix of the optoelectronic device 10 is shown in FIG.

[0123] As previously mentioned, each pixel Pix comprises an array of elementary pixels EPix, each elementary pixel EPix enabling a pixel of an image to be displayed and / or captured according to a viewpoint. The elementary pixels EPix of the same pixel Pix are associated with different viewpoints. Thus, the complete image displayed or captured according to a given viewpoint can be reconstructed from each image pixel of this image displayed or captured by each pixel Pix according to this viewpoint. As an example, in Fig.10 In FIG. 1 , each pixel Pix is ​​shown as an array including 5*5 basic pixels EPix.

[0124] According to an embodiment, the pixels Pix are arranged in M ​​rows and N columns, M and N are integers, and the product M*N corresponds to the desired resolution of images captured by device 10 and images displayed by device 10, for example 1920*1080 image pixels.

[0125] According to the present embodiment, the device 10 includes a row control circuit 90 and a column control circuit 92. The column control circuit 92 receives a data stream LED_Stream representing the intensity of the image pixels to be displayed by the device 10, and delivers a data stream PH_Stream representing the intensity of the image pixels captured by the device 10. For each row of pixels Pix, the row control circuit 90 can deliver a signal Row to each pixel Pix in the row. For each pixel column Pix, the column control circuit 92 can deliver a signal LED_Data to each pixel Pix in the column, and can receive a signal PH_Data delivered by each pixel Pix in the column.

[0126] According to an embodiment, the operation of the optoelectronic device 10 includes continuously selecting the pixels Pix of each row by the row control circuit 90, and for each selected row and for each column, transmitting data representing the current and / or voltage of each light emitting diode of each basic pixel EPix to be supplied to the pixels of the column and the selected row via the signal LED_Data; and receiving data delivered by the pixels of the column and the selected row and representing the light intensity captured by each photodiode of each basic pixel of the pixels of the column and the selected row via the signal PH_Data.

[0127] Fig.11 and Fig.12 Shows the control Fig.10Embodiments of the method for pixels of an optoelectronic device are shown in . In these embodiments, each signal LED_Data and each signal PH_Data is an analog signal, for example, an analog signal having discrete values. As an example, for each column, each level of the signal LED_Data represents the light intensity to be emitted by one of the light emitting diodes of one of the basic pixels EPix of the pixels Pix of the column and the selected row. As an example, for each column, each level of the signal PH_Data represents the light intensity captured by one of the photodiodes of one of the basic pixels EPix of the pixels Pix of the column and the selected row. Fig.11 In the embodiment shown in FIG. 1 , the signal Row can further function as a clock signal to rate the operation of the pixel Pix. Fig.12 In the embodiment shown in FIG. 8 , the clock signal Clock is different from the selection signal Row and is transmitted by the column control circuit 92 to each pixel Pix of the column for each column. Fig.11 and Fig.12 An advantage of the embodiment shown is that each pixel Pix need not include a digital-to-analog converter for controlling the light emitting diode of the elementary pixel EPix of pixel Pix nor an analog-to-digital converter for converting the signal delivered by the photodiode of the elementary pixel EPix of pixel Pix.

[0128] Fig.13 Shows the control Fig.10 An embodiment of the method for a pixel of an optoelectronic device is shown in the figure, wherein each signal LED_Data and each signal PH_Data is a digital signal. The transmission of the signals LED_Data and PH_Data can be realized by a serial link of the SPI type (Serial Peripheral Interface), which allows the signal to be transmitted simultaneously in two directions. Fig.13 A clock signal Clock is shown which is different from the selection signal Row and is transmitted to each pixel Pix of the column by the column control circuit 92 for each column. According to another embodiment, the transmission of the signals LED_Data and PH_Data may implement a self-synchronous data transmission protocol, such as the Manchester protocol. In this case, the clock Clock may not exist.

[0129] Fig.14 The block diagram shows Figure 1 and Figure 2 The pixel Pix of the device shown in FIG. 1 is applicable to an embodiment in which the signals LED_Data and PH_Data are digital signals.

[0130] Each pixel Pix includes a register 94 (e.g., a shift register controlled by a signal Clock in which successive bits of a signal LED_Data are stored) and a register 96 (e.g., a shift register controlled by a signal Clock that delivers successive bits of a signal PH_Data). For each basic pixel EPix, the pixel Pix includes a circuit 98 (LED driver) for controlling the light emitting diode LED of the display circuit 30 of the basic pixel EPix. Each control circuit 98 includes three memories 100 (data latches) that receive data stored in the register 94. Each control circuit 98 also includes three digital-analog and control circuits 102 (DAC+drivers) capable of delivering analog signals R_out, G_out, and B_out from binary data stored in the memories 100 for controlling the light emitting diode LED. Further, for each basic pixel EPix, the pixel Pix includes a circuit 104 (LS driver) for processing the signals R_sense, G_sense, and B_sense delivered by the photodiode PH of the photosensor 25 of the basic pixel Epix. Each processing circuit 104 comprises three analog-to-digital converters 106 (ADC) capable of supplying digital data stored in three memories 108 (data latches) from analog signals R_sense, G_sense, B_sense. Each processing circuit 104 is also capable of delivering the digital data stored in the memory 108 to the register 96.

[0131] Each pixel Pix can also receive a signal sense_en and a signal disp_en. The signal sense_en enables the capture of an image to be triggered, and the signal disp_en enables the screen to be generally triggered to be turned on and off. The signal is connected to all pixels Pix. When the signal disp_en is at a logic level "1", the image is displayed, and when the signal disp_en is at a logic level "0", the screen is turned off. The loading of image N+1 can be performed during the display of image N, and image N+1 will be displayed the next time the signal disp_en takes the value "1". Further, the signal disp_en enables the screen to be turned off during the capture phase to avoid distorting the captured image. The signal sense_en also enables the time of image capture to be controlled.

[0132] An advantage of the foregoing embodiment is that the number of connection terminals for each pixel Pix is ​​reduced relative to the number of connections required to connect each elementary pixel EPix directly to the column control circuit 92 .

[0133] exist Fig.10In the embodiment shown in FIG. 1 , the transmission of the signals LED_Data and PH_Data for each column is schematically shown by a track extending along the column from the column control circuit 92 and connected to each pixel Pix of the column. However, when the distance between some pixels Pix and the column control circuit 92 becomes too large, it may be difficult to ensure the integrity of the transmitted signals.

[0134] Fig.15 A method of controlling an embodiment of an optoelectronic device 10 is shown. Fig.15 Schematically illustrates a column of an optoelectronic device including three pixels Pix in four steps of a control method. Hereinafter, the row of pixels Pix closest to a column control circuit 92 is referred to as the first row, and the row of pixels Pix farthest from the column control circuit 92 is referred to as the last row. In the present embodiment, for each column, except for the pixels Pix at the ends of the column, each pixel Pix of the column is electrically connected to two adjacent pixels of the column by a plurality of conductive traces. The pixel Pix located on the last row is connected to the adjacent pixels Pix of the column and the pixel Pix located on the first row is connected to the column control circuit 92. In the present embodiment, for each column, the transmission of a signal from the column control circuit 92 to a given pixel Pix in the column and the transmission of a signal from a given pixel Pix to the column control circuit 92 are performed by continuously passing through each pixel Pix located between the column control circuit 92 and the given pixel Pix, and each of the intermediate pixels acts as a transmission repeater. This enables the maximum distance between the transmitter and the receiver to be reduced.

[0135] Fig.15 Four links are shown between two adjacent pixels Pix and between the pixels Pix of the first row and the column control circuit 92. Three links are used to transmit the previously described signals PH_Data, LED_Data and Clock, and one link is used to transmit the signal Reset. Fig.15 Active links (that is, having useful signals transmitted on them) are shown with thick lines, and inactive links are shown with thin lines. The signal LED_Data may correspond to a frame containing all the data required to display the image pixels desired for the elementary pixels of all rows of pixels of the optoelectronic device. As an example, the frame continuously includes data related to the elementary pixels of the last row, the second to last row, etc., up to the first row of pixels Pix.

[0136] An embodiment of data transmission between the column control circuit 92 and the pixel Pix comprises the following steps:

[0137] 1) The pulse of the signal Reset is transmitted to all pixels Pix in all columns at the same time;

[0138] 2) The column control circuit 92 transmits the signals Clock and LED_Data to each pixel in the first row at the same time. Each pixel in the first row further transmits the signal PH_Data it has generated to the column control circuit 92;

[0139] 3) For each column, the signals Clock and LED_Data are transmitted to the pixels of the second row via the first pixel of the first row. Conversely, the pixels of the second row transmit the signal PH_Data it has generated to the column control circuit 92 via the first pixel of the first row; and

[0140] 4) The signals Clock and LED_Data thus move from one row to the next all the way to the last row. In parallel, each pixel that starts receiving the signal LED_Data transmits the signal PH_Data it has generated (which is relayed) to the column control circuit 92 pixel by pixel.

[0141] Various embodiments and variations have been described. It will be appreciated by those skilled in the art that these various embodiments and variations may be combined, and that other variations will occur to those skilled in the art. In particular, the foregoing description of Figure 6 The insulating layer 62 described in the embodiment of the photovoltaic device shown in FIG. 1 may also be provided for Figure 4 and Figure 5 An embodiment of an optoelectronic device is shown in FIG.

[0142] Finally, based on the functional indications given above, the actual implementation of the described embodiments and variants is within the capabilities of a person skilled in the art.

[0143] Such changes, modifications and improvements are intended to be part of this disclosure and are intended to fall within the spirit and scope of the present invention. Therefore, the foregoing description is intended to be exemplary only and is not intended to be limiting. The present invention is limited only as defined by the following claims and their equivalents.

Claims

1. An optoelectronic device (10) for multi-view image display and / or capture, comprising: A support member (12) comprising opposing lower and upper surfaces (14 and 16); an electrode (32) made of a conductive material, the electrode resting on the upper surface (16); an electrically insulating encapsulating layer (34), a control and capture circuit (20) comprising a number N of light-sensitive sensors (25) of pixels capable of capturing images of a scene from different viewpoints, the lower surface (22) of said control and capture circuit (20) being attached to said electrode (32); A number N of display circuits (30) of pixels capable of displaying an image of a scene according to the different viewpoints, the display circuits (30) being attached to the upper surface (24) of the control and capture circuit (20), wherein each display circuit (30) comprises a stack (42) of semiconductor layers forming a light emitting diode (LED), each display circuit (30) being electrically coupled to the control and capture circuit (20) by contacting a conductive pad (44) with a conductive pad (38), wherein the stack (42) comprises: A doped semiconductor layer (50) of a first conductivity type in contact with the conductive pad (44); an active layer (52) in contact with the semiconductor layer (50); and a doped semiconductor layer (54) of a second conductivity type opposite to the first conductivity type in contact with the active layer (52); and a lens covering the optoelectronic circuit, Where N is a natural number greater than or equal to 3, The display circuit (30) further comprises a semiconductor layer (56) which contacts the semiconductor layer (52) of all the light emitting diodes (LED) and has a wall (48) and a photoluminescent block (46) resting thereon. wherein for each display circuit (30), polarization of the semiconductor layer 56 is performed via the wall 48; The optoelectronic device (10) further comprises a conductive tape (60), and the wall (48) is in contact with the stack (42) and with the conductive tape (60).

2. The device according to claim 1, wherein the light-sensitive sensors (25) and / or the display circuit (30) are arranged in the form of an array.

3. A device according to claim 1 or 2, wherein each optoelectronic circuit (Pix) comprises the N display circuits (30) and an integrated circuit (20) attached to the support member (12), and the N display circuits are attached to the integrated circuit on the side of the integrated circuit opposite to the support member.

4. The device according to claim 3, wherein the integrated circuit (20) comprises the N light-sensitive sensors (25).

5. A device according to any one of claims 1 to 4, wherein each display circuit (30) comprises at least one light emitting diode.

6. Device according to any one of claims 1 to 5, wherein each light-sensitive sensor (25) comprises at least one photodiode.

7. A device according to any one of claims 1 to 6, wherein each optoelectronic circuit is connected to less than 10 conductive tracks.

8. A method of manufacturing an optoelectronic device (10) according to any one of claims 1 to 7.

9. The method according to claim 8, wherein each optoelectronic circuit (Pix) comprises the N display circuits (30) and an integrated circuit (20) attached to the support (12), the N display circuits being attached to the integrated circuit on the side of the integrated circuit opposite to the support, the method comprising the following successive steps: a. forming a first wafer (80) comprising a plurality of copies of the integrated circuit and forming a second wafer (78) comprising a plurality of copies of the display circuit (30); b. attaching the second wafer to the first wafer; c. separating the display circuit in the second wafer; and d. Separating the integrated circuits in the first wafer.

10. The method of claim 9, wherein step d) is preceded by step e) of attaching the display circuit (30) to a handle (86) .

11. The method according to claim 10, comprising, between steps e) and d), a step of thinning the first wafer (80).

12. A use of an optoelectronic device (10) according to any one of claims 1 to 7, comprising providing, by each optoelectronic circuit (Pix), first data (PH_Data) representing pixels of an image captured by N photosensors (25) of the optoelectronic circuit, and / or providing, to each optoelectronic circuit (Pix), second data (LED_Data) representing pixels of an image to be displayed by N display circuits (30) of the optoelectronic circuit.

13. Use according to claim 12, wherein the optoelectronic circuits (Pix) are arranged in rows and columns and wherein for each column, at least one of the optoelectronic circuits of the column is capable of receiving the signal and is capable of at least partially transmitting the signal to another optoelectronic circuit of the column.

Images