Laser irradiation device

Abstract

The laser irradiation device can include an optical system to irradiate a laser beam; a sealed case including a plurality of beam cutters to cut both ends of the laser beam provided from the optical system to pass the laser beam; a cavity including a stage to support a substrate to irradiate the laser beam provided from the sealed case to the substrate; an exhaust portion connected to the sealed case; a first sensor configured in the sealed case and to measure a temperature in the sealed case; and a control portion to control the exhaust portion so that an exhaust pressure of the exhaust portion is variable according to a measured temperature measured by the first sensor.

Description

TECHNICAL FIELD

[0001] The present application relates to a laser irradiation apparatus and a manufacturing method of a display panel using the same. BACKGROUND

[0002] Generally, electronic devices such as smart phones, digital cameras, notebook computers, navigation devices, and smart TVs, which provide images to users, include display apparatuses for displaying images. The display apparatuses generate images and provide the generated images to the users through display screens.

[0003] The display apparatus includes a display panel including a plurality of pixels for generating images, and a driving part for driving the display panel. Each of the pixels includes a transistor and a light emitting element connected to the transistor. The transistor includes a source electrode, a drain electrode, a gate electrode, and a semiconductor layer.

[0004] In order to improve the electrical characteristics of the transistor, the semiconductor layer is formed of polycrystalline silicon (crystalline silicon) by crystallizing amorphous silicon. In order to form the polycrystalline silicon, a crystallization process of irradiating a laser beam to the amorphous silicon is required. SUMMARY

[0005] An object of the present application is to provide a laser irradiation apparatus and a manufacturing method of a display panel using the same, which can prevent air flow stains.

[0006] One embodiment of the present application relates to a laser irradiation apparatus, which can include an optical system irradiating a laser beam; a sealed case including a plurality of beam cutters cutting both ends of the laser beam provided from the optical system to pass the laser beam; a chamber including a worktable supporting a substrate to irradiate the laser beam provided from the sealed case to the substrate; an exhaust part connected to the sealed case; a first sensor disposed in the sealed case and measuring a temperature in the sealed case; and a control part controlling the exhaust part so that an exhaust pressure of the exhaust part is variable according to a measured temperature measured by the first sensor.

[0007] It can be that the higher the measured temperature, the more the exhaust pressure is increased.

[0008] It can be that the exhaust part includes an exhaust fan rotating by control of the control part, and a rotation speed per minute of the exhaust fan is variable according to the measured temperature.

[0009] It can be that the exhaust fan is driven at a first rotation speed per minute when the measured temperature is less than or equal to a reference temperature.

[0010] It can be that the exhaust fan is driven at a second rotation speed per minute greater than the first rotation speed per minute when the measured temperature is greater than the reference temperature.

[0011] The first number of revolutions per minute can have a value less than 500 revolutions per minute, and the second number of revolutions per minute can have a value greater than or equal to the 500 revolutions per minute, and the higher the measured temperature, the greater the value of the second number of revolutions per minute.

[0012] The reference temperature can be 25°C.

[0013] The laser irradiation device can further include a second sensor configured in the sealed case and measuring a pressure in the sealed case, and the control portion can control the exhaust portion so that an exhaust pressure of the exhaust portion is variable, based on a measured pressure measured by the second sensor.

[0014] The exhaust pressure can be increased as the measured pressure is increased.

[0015] The exhaust fan can be driven at a first number of revolutions per minute when the measured pressure is less than or equal to a reference pressure.

[0016] The exhaust fan can be driven at a second number of revolutions per minute greater than the first number of revolutions per minute when the measured pressure is greater than the reference pressure, and the greater the measured pressure, the greater the value of the second number of revolutions per minute.

[0017] The reference pressure can be 1 bar.

[0018] An embodiment of the present application relates to a method of manufacturing a display panel, which can include a step of generating a laser beam; a step of adjusting a width of the laser beam by cutting both ends of the laser beam with a beam cutter configured in a sealed case; a step of irradiating the laser beam having the adjusted width to a substrate; a step of measuring a temperature in the sealed case; and a step of making an exhaust pressure of an exhaust portion connected to the sealed case variable according to a measured temperature measured in the sealed case.

[0019] (EFFECT OF INVENTION)

[0020] According to an embodiment of the present application, an exhaust pressure of an exhaust portion connected to a sealed case is made variable based on a temperature or a pressure in the sealed case, so that a pressure difference between the sealed case and a cavity can be reduced. As a result, an air flow flowing from the sealed case into the cavity is reduced, so that air flow stains are not formed on a substrate disposed in the cavity. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 FIG. 1 is a diagram schematically showing a configuration of a laser irradiation device according to an embodiment of the present application.

[0022] Figure 2 is Figure 1A perspective view of the laser beam and the beam cutter.

[0023] Figure 3 is a laser irradiation device that can be used Figure 1 A plan view of a display panel manufactured by the laser irradiation device shown.

[0024] Figure 4 is a schematic representation Figure 3 A view of a cross section of a certain pixel.

[0025] Figure 5 is a sequence diagram for explaining a manufacturing method of a display panel using Figure 1 A sequence diagram of a manufacturing method of a display panel using the laser irradiation device shown.

[0026] Figure 6 is a view indicating Figure 1 A view indicating the operation state of the exhaust portion of the laser irradiation device shown.

[0027] Figure 7a is a graph indicating the temperature change inside the sealed case when the exhaust portion is not used.

[0028] Figure 7b is a graph indicating the temperature change inside the sealed case when the exhaust portion is used.

[0029] Figure 8a is a graph indicating the plane of the substrate on which the crystallization process is performed when the exhaust portion is not used.

[0030] Figure 8b is a graph indicating the plane of the substrate on which the crystallization process is performed when the exhaust portion is used.

[0031] (Symbol Explanation)

[0032] LIA: laser irradiation device; OPT: optical system; SEB: sealed case; CHM: chamber; BCT: beam cutter; STG: stage; WIN1: first window portion; WIN2: second window portion; EXH: exhaust portion; EFN: exhaust fan; B: laser beam; CON: control portion; SN1: first sensor; SN2: second sensor. DETAILED DESCRIPTION

[0033] In the present specification, in the case where it is mentioned that a certain constituent element (or region, layer, portion, etc.) is located on, connected to, or combined with another constituent element, it means that it is directly disposed / connected / combined on the other constituent element, or a third constituent element can be further disposed therebetween.

[0034] The same symbols refer to the same constituent elements. In addition, in each drawing, the thickness, ratio, and size of each constituent element are exaggerated for effective explanation of technical contents.

[0035] "and / or" includes all possible combinations of the associated terms.

[0036] The terms first, second, etc. can be used to describe various constituent elements, but the constituent elements described by the terms should not be limited to the terms. The terms are used only for the purpose of distinguishing one constituent element from another constituent element. For example, a first constituent element can be named a second constituent element, and similarly, a second constituent element can be named a first constituent element, without departing from the scope of the present application. The singular form includes the plural form unless explicitly stated otherwise.

[0037] In addition, the terms "below", "under", "above", "on", etc. are used to describe the connection relationship of the constituent elements illustrated in the drawings. The terms are relative concepts, and are described based on the direction of the illustration.

[0038] Unless defined differently, all terms (including technical and scientific terms) used in the present specification have the same meaning as commonly understood by one of ordinary skill in the art. In addition, terms such as terms defined in commonly used dictionaries should be interpreted as having a consistent meaning in the context of the relevant technology, unless otherwise defined ideally or overly formally.

[0039] The terms "include" or "have" should be understood as referring to the presence of a feature, number, step, operation, constituent element, component, or a combination thereof described in the specification, and do not exclude the presence or additional possibility of one or more other features, numbers, steps, operations, constituent elements, components, or combinations thereof.

[0040] Hereinafter, each embodiment of the present application will be described in detail with reference to the accompanying drawings.

[0041] Figure 1 is a diagram schematically showing the configuration of a laser irradiation device to which the embodiment of the present application relates. Figure 2 is Figure 1 is a perspective view of a laser beam, a beam cutter, and a beam collector shown in FIG. 1.

[0042] As an example, in Figure 2 the laser beam is shown in a dotted line.

[0043] Referring to Figure 1 and Figure 2The laser irradiation apparatus LIA can include the optical system OPT, the sealed box SEB, the cavity CHM, the first window portion WIN1, the second window portion WIN2, the stage STG, a beam dump BDM, the first sensor SN1, the second sensor SN2, a plurality of exhaust portions EXH, and a control portion CON. Although not illustrated, the laser irradiation apparatus LIA can also include a laser oscillator that generates the laser beam B.

[0044] The optical system OPT can guide the laser beam B generated by the laser oscillator to irradiate a desired position. Although not illustrated, the optical system OPT can include a plurality of lenses and reflecting members, or the like, in order to obtain a laser beam B of a desired size.

[0045] As an example, the laser beam B can be formed using XeCl, XeF, Nd-YAG, or the like. In this case, the peak wavelength of the laser beam B can be 308 nm, 351 nm, 532 nm, respectively.

[0046] In order to prevent contamination of the laser beam B and in order to stabilize the laser beam B, an inert gas can be filled in the optical system OPT. For example, nitrogen (N2) can be filled in the optical system OPT.

[0047] The laser beam B can be formed in a rectangular shape that is long in the first direction DR1 by the optical system OPT on a plane defined by the first direction DR1 and a second direction DR2 that perpendicularly intersects the first direction DR1. By the optical system OPT, the laser beam B can be irradiated in a third direction DR3 that is perpendicular to the plane defined by the first direction DR1 and the second direction DR2.

[0048] The sealed box SEB can be disposed below the optical system OPT with reference to the third direction DR3. The sealed box SEB can be disposed in contact with the optical system OPT. The laser beam B can be irradiated to the sealed box SEB.

[0049] The first window portion WIN1 can be disposed between the optical system OPT and the sealed box SEB. The first window portion WIN1 can be disposed at a position at which the laser beam B is irradiated. The optical system OPT and the sealed box SEB can define a first opening portion OP1 for disposing the first window portion WIN1.

[0050] The first window portion WIN1 can be disposed in the first opening portion OP1 so as to partition an inner space of the optical system OPT and an inner space of the sealed box SEB from each other. The first window portion WIN1 can include a light-transmissive substance. The laser beam B can be transmitted through the first window portion WIN1 to be irradiated to the sealed box SEB.

[0051] The seal box SEB can include a plurality of beam cutters BCT spaced apart in the first direction DR1. The beam cutters BCT can cut both ends of the laser beam B with respect to the first direction DR1 to pass the laser beam B therethrough. With the beam cutters BCT, the profile scattered light beams of both ends of the laser beam B can be cut. The beam cutters BCT can adjust the width of the laser beam B with respect to the first direction DR1 to match the formation region of the semiconductor layer SML of the substrate SUB.

[0052] The seal box SEB can be formed in a sealed box shape. In the seal box SEB, in order to prevent contamination of the laser beam B and in order to stabilize the laser beam B, nitrogen gas can be filled as an inert gas. The seal box SEB can define an injection inlet IN for injecting the nitrogen gas.

[0053] A cavity CHM can be disposed below the seal box SEB with reference to the third direction DR3. The cavity CHM can be disposed in contact with the seal box SEB. The laser beam B can be irradiated to the cavity CHM.

[0054] A second window WIN2 can be disposed between the seal box SEB and the cavity CHM. The second window WIN2 can be disposed at a position at which the laser beam B is irradiated. The seal box SEB and the cavity CHM can define a second opening OP2 for disposing the second window WIN2.

[0055] The second window WIN2 can be disposed in the second opening OP2 so as to partition the inner space of the seal box SEB and the inner space of the cavity CHM from each other. The second window WIN2 can include a light-transmissive substance. The laser beam B can be transmitted through the second window WIN2 to be irradiated to the cavity CHM.

[0056] The cavity CHM can include a stage STG capable of supporting and transferring the substrate SUB. The substrate SUB can be disposed on the stage STG. The stage STG can be moved in the second direction DR2 to scan the entire substrate SUB with the laser beam B.

[0057] A semiconductor layer SML can be disposed on the substrate SUB. The semiconductor layer SML can include amorphous silicon. The laser beam B can be irradiated to the amorphous silicon of the semiconductor layer SML. By the laser beam B, the amorphous silicon is crystallized to form polycrystalline silicon (crystalline silicon), as a result, the semiconductor layer SML including the polycrystalline silicon can be formed. Such a process can be defined as a crystallization process.

[0058] When the laser irradiation apparatus LIA is continuously used, the laser beam B is continuously irradiated to the beam cutter BCT, and thus the temperature of the beam cutter BCT can increase. Due to the relatively low temperature of the nitrogen gas and the increased temperature of the beam cutter BCT, a thermal air current due to a convection phenomenon can occur at the periphery of the beam cutter BCT. Due to the thermal air current, a spread of laser energy can occur at the edge position portion of the laser beam B that has passed through the beam cutter BCT.

[0059] Due to the spread of the laser energy, the uniformity of the polysilicon can decrease, and crystallization unevenness can occur. As a result, a stain can be formed on the substrate SUB, and the stain can be recognized. In order to prevent the thermal air current from occurring, the beam cutter BCT can include a material that can minimize the increase in temperature. For example, the beam cutter BCT can include a material having a high specific heat. Specifically, when the beam cutter BCT includes a material having a specific heat of 0.7 [J / g°C] or more, the stain recognized on the substrate SUB can be minimized.

[0060] The beam collector BDM can be disposed on the beam cutter BCT. The beam collector BDM can be disposed to be inclined to one side of the beam cutter BCT in the second direction DR2. The beam collector BDM can absorb and remove the laser beam B reflected from the beam cutter BCT or the laser beam B reflected from the substrate SUB.

[0061] The first sensor SN1 can be disposed in the seal box SEB to measure the temperature in the seal box SEB. The first sensor SN1 can be a temperature sensor. The second sensor SN2 can be disposed in the seal box SEB to measure the pressure in the seal box SEB. The second sensor SN2 can be a pressure sensor.

[0062] One first sensor SN1 and one second sensor SN2 are exemplarily used, but embodiments of the present application are not limited thereto. For example, only the first sensor SN1 can be disposed in the seal box SEB to measure only the temperature in the seal box SEB. Further, only the second sensor SN2 can be disposed in the seal box SEB to measure only the pressure in the seal box SEB.

[0063] Each exhaust portion EXH can be connected to the seal box SEB. For example, each exhaust portion EXH can be connected to an upper portion of the seal box SEB that does not overlap the optical system OPT. Each exhaust portion EXH can include an exhaust fan EFN that rotates at a predetermined speed, respectively.

[0064] The control section CON can control each exhaust section EXH so that the exhaust pressure of each exhaust section EXH is variable, in accordance with the temperature of the seal box SEB measured by the first sensor SN1. Further, the control section CON can control each exhaust section EXH so that the exhaust pressure of each exhaust section EXH is variable, in accordance with the pressure of the seal box SEB measured by the second sensor SN2. The control section CON can control each exhaust fan EFN so that the revolution per minute (RPM: Revolution Per Minute) of each exhaust fan EFN is variable, in accordance with the temperature of the seal box SEB or the pressure of the seal box SEB.

[0065] The higher the temperature of the seal box SEB or the higher the pressure of the seal box SEB, the more the exhaust pressure of each exhaust section EXH can increase. That is, the revolution per minute of each exhaust fan EFN can increase. The revolution per minute can be defined as the rotational speed per minute. Each exhaust fan EFN rotates and can exhaust the nitrogen gas in the seal box SEB to the outside through each exhaust section EXH.

[0066] The temperature in the seal box SEB can rise due to the heat energy of the laser beam B. When the temperature in the seal box SEB rises, the nitrogen gas in the seal box SEB can be heated and expand. Therefore, the pressure in the seal box SEB can rise. As a result, the pressure in the seal box SEB can become higher than the pressure in the chamber CHM.

[0067] The nitrogen gas in the seal box SEB can flow into the chamber CHM due to the difference between the pressure of the seal box SEB and the pressure of the chamber CHM. For example, the nitrogen gas in the seal box SEB can flow into the chamber CHM through a fine space formed near the edge of the second window section WIN2.

[0068] Therefore, an air flow in which the nitrogen gas in the seal box SEB flows into the chamber CHM can be formed. Due to this air flow, a stain on the substrate SUB can be formed. The stain on the substrate SUB due to the air flow can be defined as an air flow stain.

[0069] In the embodiment of the present application, the nitrogen gas of the seal box SEB is exhausted to the outside through each exhaust section EXH, so that the pressure of the seal box SEB can be lowered. The higher the temperature of the seal box SEB or the higher the pressure of the seal box SEB, the more the exhaust pressure of each exhaust section EXH increases, so that the nitrogen gas can be further exhausted to the outside. Therefore, the pressure difference between the seal box SEB and the chamber CHM can be reduced.

[0070] As a result, the flow of gas from the sealed box SEB into the chamber CHM can be reduced, and a gas flow stain can not be formed on the substrate SUB disposed in the chamber CHM. In addition, since the heated nitrogen gas is discharged to the outside through each exhaust portion EXH, the internal temperature of the sealed box SEB can be reduced.

[0071] Hereinafter, a manufacturing method of a display panel will be described with reference to Figure 1 The operation of each exhaust portion EXH will be described in more detail.

[0072] Figure 3 is a plan view of a display panel manufactured using the laser irradiation apparatus shown in Figure 1 Figure 4 is a plan view of a display panel manufactured using the laser irradiation apparatus shown in Figure 3 is a view of a cross section of a certain pixel.

[0073] Referring to Figure 3 The display device DD can include a display panel DP, a scan driver SDV, a data driver DDV, and an emission driver EDV.

[0074] The display panel DP can be a light-emitting display panel, and is not particularly limited. For example, the display panel DP can be an organic light-emitting display panel or a quantum dot light-emitting display panel. The light-emitting layer of the organic light-emitting display panel can include an organic light-emitting substance. The light-emitting layer of the quantum dot light-emitting display panel can include quantum dots, quantum rods, or the like. Hereinafter, the display panel DP will be described with reference to an organic light-emitting display panel.

[0075] The display panel DP can have a rectangular shape including a long side extending in a first direction DR1 and a short side extending in a second direction DR2, but the shape of the display panel DP is not limited thereto. The display panel DP can include a display area DA and a non-display area NDA surrounding the display area DA.

[0076] The display panel DP can include a plurality of pixels PX, a plurality of scan lines SL1 to SLm, a plurality of data lines DL1 to DLn, a plurality of emission lines EL1 to ELm, a first control line CSL1 and a second control line CSL2, a first power line PL1 and a second power line PL2, a connection line CNL, and a plurality of pads PD. Here, m and n are natural numbers.

[0077] ​The pixel PX can be arranged in the display region DA. The scan driving section SDV, the light emitting driving section EDV, and the data driving section DDV can be arranged in the non-display region NDA. The scan driving section SDV and the light emitting driving section EDV can be arranged in the non-display region NDA adjacent to the long side of the display panel DP, respectively. The data driving section DDV can be made in an integrated circuit chip form and arranged in the non-display region NDA adjacent to one of the short sides of the display panel DP (for example, the lower end of the display panel DP).

[0078] The scan lines SL1 to SLm can extend in the second direction DR2 and be connected to the pixels PX and the scan driving section SDV. The data lines DL1 to DLn can extend in the first direction DR1 and be connected to the pixels PX and the data driving section DDV. The light emitting lines EL1 to ELm can extend in the second direction DR2 and be connected to the pixels PX and the light emitting driving section EDV.

[0079] The first power supply line PL1 can extend in the first direction DR1 and be arranged in the non-display region NDA. The first power supply line PL1 can be arranged between the display region DA and the light emitting driving section EDV. The connection line CNL can be arranged in the display region DA and extend in the second direction DR2 and be arranged in the first direction DR1. The connection line CNL can be connected to the first power supply line PL1 and the pixels PX. The first voltage can be applied to the pixels PX through the first power supply line PL1 and the connection line CNL connected to each other.

[0080] The second power supply line PL2 can be arranged in the non-display region NDA. The second power supply line PL2 can extend along the long side of the display panel DP and the other short side of the display panel DP on which the data driving section DDV is not arranged. The second power supply line PL2 can be arranged at a position further outside than the scan driving section SDV and the light emitting driving section EDV. Although not illustrated, the second power supply line PL2 can extend toward the display region DA and be connected to the pixels PX. The second voltage having a level lower than the first voltage can be applied to the pixels PX through the second power supply line PL2.

[0081] The first control line CSL1 can be connected to the scan driving section SDV and extend toward the lower end of the display panel DP when viewed in plan. The second control line CSL2 can be connected to the light emitting driving section EDV and extend toward the lower end of the display panel DP when viewed in plan. The data driving section DDV can be arranged between the first control line CSL1 and the second control line CSL2.

[0082] Each pad PD can be configured to be more adjacent to a lower end of the display panel DP than the data driving part DDV. The data lines DL1 to DLn can be connected with the data driving part DDV, and the data driving part DDV can be connected with each pad PD corresponding to the data lines DL1 to DLn. The first power line PL1, the second power line PL2, the first control line CSL1, and the second control line CSL2 can be connected with each corresponding pad PD.

[0083] Although not illustrated, the display device DD can further include a timing controller for controlling operations of the scan driving part SDV, the data driving part DDV, and the emission driving part EDV, and a voltage generating part for generating the first voltage and the second voltage. The timing controller and the voltage generating part can be connected with each corresponding pad PD through a printed circuit substrate.

[0084] The scan driving part SDV can generate a plurality of scan signals, each of which can be applied to each pixel PX through the scan lines SL1 to SLm. The data driving part DDV can generate a plurality of data voltages, each of which can be applied to each pixel PX through the data lines DL1 to DLn. The emission driving part EDV can generate a plurality of emission signals, each of which can be applied to each pixel PX through the emission lines EL1 to ELm.

[0085] The pixel PX can receive provision of the data voltage in response to the scan signal. The pixel PX can emit light of a luminance corresponding to the data voltage in response to the emission signal, thereby displaying an image. An emission time of the pixel PX can be controlled by the emission signal.

[0086] Referring to Figure 4 The pixel PX can include a transistor TR and an emission element OLED. The emission element OLED can include a first electrode AE, a second electrode CE, a hole control layer HCL, an electron control layer ECL, and an emission layer EML. The first electrode AE can be an anode, and the second electrode CE can be a cathode.

[0087] The transistor TR and the emission element OLED can be configured on the substrate SUB. As an example, one transistor TR is illustrated, but in fact, the pixel PX can include a plurality of transistors for driving the emission element OLED and at least one capacitor.

[0088] The display area DA can include an emission area PA corresponding to each pixel PX and a non-emission area NPA around the emission area PA. The emission element OLED can be configured in the emission area PA.

[0089] A buffer layer BFL can be configured on the substrate SUB, and the buffer layer BFL can be an inorganic layer. A semiconductor pattern can be configured on the buffer layer BFL. The semiconductor pattern can be connected with each corresponding pad PD through a via V. Figure 1The illustrated semiconductor layer SML is formed. The semiconductor pattern can include polysilicon. The semiconductor pattern including polysilicon can be formed on the substrate SUB by the laser irradiation apparatus LIA.

[0090] The electrical characteristics of the semiconductor pattern can differ depending on whether or not it is doped. The semiconductor pattern can include a doped region and an undoped region. The doped region can be doped with an N-type dopant or a P-type dopant. The doped region can have a higher conductivity than the undoped region and substantially function as a source and a drain of the transistor TR. The undoped region can substantially correspond to an active (or channel) region of the transistor.

[0091] The source S, the active region A, and the drain D of the transistor TR can be formed of the semiconductor pattern. The first insulating layer INS1 can be disposed on the semiconductor pattern. The gate G of the transistor TR can be disposed on the first insulating layer INS1. The second insulating layer INS2 can be disposed on the gate G. The third insulating layer INS3 can be disposed on the second insulating layer INS2.

[0092] The connection electrode CNE can be disposed between the transistor TR and the light emitting element OLED. The connection electrode CNE can include the first connection electrode CNE1 and the second connection electrode CNE2 disposed on the first connection electrode CNE1.

[0093] The first connection electrode CNE1 can be disposed on the third insulating layer INS3 and connected to the drain D through the first contact hole CH1 defined in the first insulating layer INS1 to the third insulating layer INS3. The fourth insulating layer INS4 can be disposed on the first connection electrode CNE1. The fifth insulating layer INS5 can be disposed on the fourth insulating layer INS4.

[0094] The second connection electrode CNE2 can be disposed on the fifth insulating layer INS5. The second connection electrode CNE2 can be connected to the first connection electrode CNE1 through the second contact hole CH2 defined in the fifth insulating layer INS5. The sixth insulating layer INS6 can be disposed on the second connection electrode CNE2. The first insulating layer INS1 to the sixth insulating layer INS6 can be inorganic layers or organic layers.

[0095] The first electrode AE can be disposed on the sixth insulating layer INS6. The first electrode AE can be connected to the second connection electrode CNE2 through the third contact hole CH3 defined in the sixth insulating layer INS6. A pixel definition film PDL can be defined on the first electrode AE and the sixth insulating layer INS6 to expose a predetermined portion of the first electrode AE. An opening portion PX_OP for exposing the predetermined portion of the first electrode AE can be defined in the pixel definition film PDL.

[0096] The hole control layer HCL can be disposed on the first electrode AE and the pixel definition film PDL. The hole control layer HCL can be commonly disposed on the light emitting region PA and the non-light emitting region NPA. The hole control layer HCL can include a hole transport layer and a hole injection layer.

[0097] The light emitting layer EML can be disposed on the hole control layer HCL. The light emitting layer EML can be disposed on a region corresponding to the opening portion PX_OP. The light emitting layer EML can include an organic substance and / or an inorganic substance. The light emitting layer EML can generate light of any one color among red, green, and blue.

[0098] The electron control layer ECL can be disposed on the light emitting layer EML and the hole control layer HCL. The electron control layer ECL can be commonly disposed on the light emitting region PA and the non-light emitting region NPA. The electron control layer ECL can include an electron transport layer and an electron injection layer.

[0099] The second electrode CE can be disposed on the electron control layer ECL. The second electrode CE can be commonly disposed on each of the pixels PX. The thin film encapsulation layer TFE can be disposed on the light emitting element OLED.

[0100] A first voltage can be applied to the first electrode AE and a second voltage can be applied to the second electrode CE by the transistor TR. The holes and the electrons injected into the light emitting layer EML combine to form excitons, and the light emitting element OLED can emit light while the excitons transition to a ground state.

[0101] Figure 5 is a sequence diagram for explaining a manufacturing method of a display panel using a laser irradiation apparatus shown in Figure 1 Figure 6 is a diagram showing an operation state of an exhaust portion of a laser irradiation apparatus shown in Figure 1

[0102] Referring to Figure 5 and Figure 6 In step S110, a laser beam B can be generated to be irradiated onto a substrate SUB. As described above, the width of the laser beam B can be adjusted by cutting both ends of the laser beam B by the beam cutter BCT, and thus the laser beam B having the adjusted width can be irradiated onto the substrate SUB.

[0103] In step S120, the temperature and the pressure inside the sealed box SEB can be measured. The temperature and the pressure inside the sealed box SEB can be measured by the first sensor SN1 and the second sensor SN2. Information of the temperature measured by the first sensor SN1 (hereinafter, referred to as a measured temperature) and information of the pressure measured by the second sensor SN2 (hereinafter, referred to as a measured pressure) can be provided to the control portion CON.

[0104] ​​The exhaust pressure of the exhaust section EXH connected to the sealed box SEB is made variable in accordance with the measured temperature or the measured pressure measured by the sealed box SEB. Specifically, in step S130, the measured temperature and the reference temperature can be compared by the control section CON. Further, in step S140, the measured pressure and the reference pressure can be compared by the control section CON. As an example, the reference temperature can be set to 25°C, and the reference pressure can be set to 1 bar.

[0105] The exhaust section EXH can be driven in a manner that the higher the measured temperature or the measured pressure, the higher the exhaust pressure. For example, when the measured temperature is less than or equal to the reference temperature, in step S150, each exhaust fan EFN can be driven at a first number of revolutions per minute. Further, when the measured pressure is less than or equal to the reference pressure, in step S150, each exhaust fan EFN can be driven at the first number of revolutions per minute. The first number of revolutions per minute can be defined by the smallest number of revolutions per minute among the numbers of revolutions per minute of each exhaust fan EFN.

[0106] When the measured temperature is greater than the reference temperature, in step S160, each exhaust fan EFN can be driven at a second number of revolutions per minute greater than the first number of revolutions per minute. Further, when the measured pressure is greater than the reference pressure, in step S160, each exhaust fan EFN can be driven at the second number of revolutions per minute. The first number of revolutions per minute can have a value less than 500 revolutions per minute, and the second number of revolutions per minute can have a value greater than or equal to 500 revolutions per minute.

[0107] The value of the second number of revolutions per minute can increase the higher the measured temperature. Further, the value of the second number of revolutions per minute can increase the higher the measured pressure. Table 1 below indicates the number of revolutions per minute (RPM) of each exhaust fan EFN in accordance with the measured temperature (Temp) and the measured pressure (Pressure).

[0108] [Table 1]

[0109]

[0110]

[0111] Since the measured temperature (Temp) is greater than 25°C, and the measured pressure (Pressure) is greater than 1 bar, the RPM of Table 1 can be the second number of revolutions per minute. As shown in Table 1, it can be confirmed that the value of the second number of revolutions per minute can increase the higher the measured temperature or the measured pressure.

[0112] As Figure 6As shown, nitrogen gas (N2) can be injected into the sealed box SEB through the injection port IN. The nitrogen gas (N2) can be heated in the sealed box SEB. The heated nitrogen gas (N2) can be exhausted to the outside through the exhaust portions EXH. Thus, the temperature in the sealed box SEB can be decreased, and the pressure in the sealed box SEB can be decreased.

[0113] The higher the temperature of the sealed box SEB or the higher the pressure of the sealed box SEB, the more the number of rotations per minute of the exhaust fan EFN is increased, and thus the more the exhaust pressure can be increased. Thus, the nitrogen gas (N2) can be further exhausted to the outside. Since the pressure difference between the sealed box SEB and the chamber CHM is decreased, and thus the flow of the gas from the sealed box SEB to the chamber CHM is reduced, as a result, the air flow stain can not be formed on the substrate SUB.

[0114] Figure 7a is a graph showing the temperature change in the sealed box when the exhaust portion is not used. Figure 7b is a graph showing the temperature change in the sealed box when the exhaust portion is used.

[0115] Referring to Figure 7a and Figure 7b , the horizontal axis of the graph shows the process time, and the vertical axis shows the temperature. The temperature in the sealed box SEB can be further decreased when the exhaust portion EXH is used than when the exhaust portion EXH is not used. The temperature in the sealed box SEB is further decreased when the exhaust portion EXH is used, and thus the pressure in the sealed box SEB can be further decreased.

[0116] Figure 8a is a graph showing the plane of the substrate on which the crystallization process is performed when the exhaust portion is not used. Figure 8b is a graph showing the plane of the substrate on which the crystallization process is performed when the exhaust portion is used.

[0117] Referring to Figure 8a , when the exhaust portion EXH is not used, the air flow stain AFS such as a vertical line can be formed on the substrate SUB'. The air flow stain AFS can be recognized on the display panel including the substrate SUB'.

[0118] Referring to Figure 8b , when the exhaust portion EXH is used, the air flow stain AFS can not be formed on the substrate SUB. Thus, the air flow stain AFS can not be recognized on the display panel DP including the substrate SUB.

[0119] The foregoing has been described with reference to the embodiments, but those skilled in the art will understand that various modifications and changes can be made thereto without departing from the scope of the present application as set forth in the claims. In addition, the embodiments disclosed in the present application are not intended to limit the technical idea of the present application, and it should be interpreted that all technical ideas within the scope of the claims and their equivalents are included in the scope of the present application.

Claims

1. A laser irradiation device, comprising: Optical system, irradiating the laser beam; The sealed box includes a plurality of beam cutters that cut off both ends of the laser beam provided from the optical system to allow the laser beam to pass through, and a beam collector disposed on the beam cutters and absorbing and removing the laser beam reflected from the beam cutters or from the substrate. The cavity includes a stage that supports the substrate for irradiating the substrate with the laser beam provided from the sealed box; The exhaust section is connected to the sealing box; A first sensor is disposed inside the sealed box and measures the temperature inside the sealed box; as well as The control unit controls the exhaust unit to make the exhaust pressure of the exhaust unit variable based on the measured temperature measured by the first sensor. The higher the measured temperature, the greater the exhaust pressure.

2. The laser irradiation device according to claim 1, wherein, The exhaust section includes an exhaust fan that rotates under the control of the control unit. The speed of the exhaust fan per minute can vary depending on the measured temperature.

3. The laser irradiation device according to claim 2, wherein, When the measured temperature is less than or equal to the reference temperature, the exhaust fan is driven at a first speed per minute.

4. The laser irradiation device according to claim 3, wherein, When the measured temperature is greater than the reference temperature, the exhaust fan is driven at a second rotational speed greater than the first rotational speed per minute.

5. The laser irradiation device according to claim 4, wherein, The first rotational speed per minute has a value less than 500 rotational speeds per minute, and the second rotational speed per minute has a value greater than or equal to the 500 rotational speeds per minute. The higher the measured temperature, the higher the value of the second rotational speed per minute.

6. The laser irradiation device according to claim 2, further comprising: The second sensor is disposed inside the sealed box and measures the pressure inside the sealed box. The control unit controls the exhaust section based on the measured pressure measured by the second sensor, so that the exhaust pressure of the exhaust section is variable.

7. The laser irradiation device according to claim 6, wherein, The higher the measured pressure, the greater the increase in exhaust pressure.

8. The laser irradiation device according to claim 6, wherein, When the measured pressure is less than or equal to the reference pressure, the exhaust fan is driven at a first speed per minute.

9. The laser irradiation device according to claim 8, wherein, When the measured pressure is greater than the reference pressure, the exhaust fan is driven at a second rotational speed greater than the first rotational speed per minute. The greater the measured pressure, the greater the value of the second rotational speed per minute.

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