The invention relates to the technical field of
diamond epitaxial growth, and discloses an intelligent bias
voltage regulation and control method and
system for
diamond single crystal heteroepitaxial growth, and the
system comprises a
data acquisition module, a prediction module, an intelligent optimization module, a gradient field compensation module and a feedback and regulation and control module. The
future trend is pre-judged by adopting the prediction model, and potential growth
abnormality such as
nucleation probability reduction in a certain area can be perceived in advance, so that the
control system has perspectiveness, and lagging of post passive compensation is avoided; the
reinforcement learning controller comprehensively considers an accumulative effect and a long-term target in a strategy optimization process, so that bias
voltage regulation and control are more intelligent; the
intelligent decision-making capability is far better than that of an adjustment mode of artificial experience or a preset program, so that the growth process has stronger robustness on external disturbance such as
airflow fluctuation and
discharge state change; in the whole growth process, the consistency of
crystal nucleuses and growth rates in all regions is kept, and the accumulation of thermal stress and defects in the large-size thin film can be inhibited.