A self-revolving base for a vapor phase epitaxial reaction chamber structure

Abstract

The present invention relates to the technical field related to GaN preparation, and discloses a self-revolving base for a gas phase epitaxial reaction chamber structure, comprising a substrate support and an embedded substrate, wherein the embedded substrate is arranged on the inner side of the substrate support, and a plurality of embedded openings are provided in a circular array on the surface of the embedded substrate. In the self-revolving base for a gas phase epitaxial reaction chamber structure, when the process gas overflows through the gap between the cavity substrate body and the inner side wall of the embedded opening, the annular flow blocking slope can effectively prevent the process gas from overflowing vertically downward, and the setting of the annular flow blocking groove blocks the process gas overflowing and refluxing vertically downward, and at the same time, the setting of the annular flow limiting slope and the annular limiting groove further reduces the overflow reflux gas from being led out through the gap between the annular embedded ring and the annular embedded groove, and minimizes the overflow of the process gas under the premise of ensuring the stable coordinated activities between the structures, thereby effectively ensuring the supply reaction efficiency of the process gas.

Description

Technical Field

[0001] The invention relates to the technical field related to GaN preparation, and in particular to a self-revolving base for a vapor phase epitaxial reaction chamber structure. Background Art

[0002] GaN is a typical representative of the third generation of wide bandgap semiconductors, and has been widely used in semiconductor lighting, microwave power devices and power electronic devices, showing great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material. Such homogeneous epitaxy (i.e. the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film, reduce dislocation density, increase device life, improve luminous efficiency, and increase device operating current density.

[0003] The main methods for growing GaN semiconductor materials include metal organic vapor phase epitaxy (MOCVD), hydride vapor phase epitaxy (HVPE) and vapor phase reaction (CAD). Among them, MOCVD is one of the most commonly used technologies, with the advantages of high crystal quality, good uniformity, simple operation and easy control. The HVPE method has a very high growth rate, which can reach tens or even hundreds of microns per hour, and is very suitable for growing thick film GaN substrates. However, due to the fast growth rate, the epitaxial film is prone to cracks, and the uniformity needs to be improved.

[0004] In a GaN preparation method using vapor phase epitaxial reaction, process gas is deposited on a substrate. To ensure the deposition quality of the GaN crystal, a rotating base of a reaction chamber structure performs a uniform self-revolution motion. The self-rotating substrate and the revolving substrate on the rotating base cooperate with each other, and a certain movable gap is left between the cooperating structures to ensure the stability of the coordinated activities between the structures. However, the process gas itself has a certain fluidity, which causes the process gas to overflow through the cooperating gap between the structures, reducing the supply reaction efficiency of the process gas. Therefore, the inventors designed a self-revolution base for a vapor phase epitaxial reaction chamber structure to solve the above technical problems. Summary of the invention

[0005] 1. Technical issues to be resolved

[0006] In view of the deficiencies in the prior art, the present invention provides a self-revolving base for a vapor phase epitaxial reaction chamber structure, which solves the problem of easy flow and overflow of process gas during the preparation of GaN.

[0007] (II) Technical solution

[0008] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a self-revolving base for a vapor phase epitaxial reaction chamber structure, comprising a substrate support and an embedded substrate, wherein the embedded substrate is arranged on the inner side of the substrate support, a plurality of embedded openings are provided in an annular array on the surface of the embedded substrate, a corresponding cavity substrate body is provided in the embedded opening, an inner ring side of the embedded substrate is provided with internal meshing teeth, an output shaft for driving is provided directly below the substrate support, a central gear is installed at the end of the output shaft, a planetary support plate is connected to the output shaft through a positioning bearing, a transmission shaft corresponding to the cavity substrate body is movably installed on the star-shaped support plate, a planetary gear meshing with the central gear is installed on the transmission shaft, the planetary gear meshes with the internal meshing teeth of the embedded substrate, and the end of the transmission shaft is connected to the corresponding cavity substrate body;

[0009] An annular embedding groove is provided on the inner side wall of the embedding opening, and an annular embedding ring matched with the annular embedding groove is installed on the annular side wall of the cavity substrate body, the annular embedding ring is embedded in the inner side of the corresponding annular embedding groove, and an annular flow blocking groove and annular flow limiting groove connected to each other are provided on the inner top of the annular embedding groove, and an annular flow blocking slope and an annular flow limiting slope are respectively provided at the matching parts of the annular embedding ring and the corresponding annular flow blocking groove and the annular flow limiting groove, and the annular flow blocking slope and the annular flow limiting slope are respectively embedded in the corresponding annular flow blocking groove and the annular flow limiting groove;

[0010] The inner cavity top of the cavity substrate body is provided with an installation groove, and a heater for heating the process gas deposition is installed in the installation groove.

[0011] Preferably, the surfaces of the cavity substrate body and the embedded substrate are both made of high-purity carbon material, and the high-purity carbon surfaces of the cavity substrate body and the embedded substrate are coated with SiC coating. The SiC coating is resistant to high temperatures and ensures that GaN is stably deposited on the high-temperature surface of the cavity substrate body.

[0012] Preferably, the surface of the cavity substrate body, the surface of the embedded substrate and the surface of the substrate support are flush.

[0013] Preferably, a movable gap is left between the annular side wall of the cavity substrate body and the inner side wall of the embedded opening to ensure the stability of the rotational movement between the structures.

[0014] Preferably, the heating surface of the heater fits with the inner top surface of the cavity substrate body, ensuring that the heat generated by the heater itself is conducted through the surface of the cavity substrate body to the maximum extent, ensuring that the process gas can be stably deposited on the surface of the cavity substrate body.

[0015] Preferably, the axis center line of the output shaft coincides with the vertical axis center line of the substrate support, the output shaft drives the star gear to rotate through the central gear, and the star gear meshes with the internal meshing teeth of the embedded substrate to ensure effective self-revolution of the embedded substrate and the cavity substrate body.

[0016] (III) Beneficial effects

[0017] The present invention provides a self-revolving base for a vapor phase epitaxial reaction chamber structure, which has the following beneficial effects:

[0018] (1) The self-revolving base for the gas phase epitaxial reaction chamber structure cooperates with each other by arranging a cavity substrate body, an annular embedding ring and an inner side wall of an annular embedding groove. When the device is in use, the process gas is deposited on the surface of the cavity substrate body and the embedded substrate, and the embedded substrate and the cavity substrate body revolve and rotate respectively. The cavity substrate body rotates in the embedded opening of the embedded substrate. At this time, the annular embedding ring rotates in the corresponding annular embedding groove. When the process gas overflows through the gap between the cavity substrate body and the inner side wall of the embedded opening, the annular flow blocking slope can effectively prevent the process gas from overflowing vertically downward. The setting of the annular flow blocking groove blocks the process gas overflowing and flowing back vertically downward, thereby effectively reducing the overflow of the process gas. At the same time, the setting of the annular flow limiting slope and the annular limiting groove further reduces the overflow and return flow of the overflowing gas from being discharged through the gap between the annular embedding ring and the annular embedding groove. Different from the gap overflow structure between the traditional structures, the overflow of the process gas is minimized to the maximum extent under the premise of ensuring the stable coordination between the structures, thereby effectively ensuring the supply reaction efficiency of the process gas.

[0019] (2) The self-revolving base for the vapor phase epitaxial reaction chamber structure is different from the traditional self-rotating substrate by setting a cavity substrate body. The heater is sealed and heated in the cavity substrate body, which effectively improves the heat utilization efficiency of the heater itself. At the same time, the cavity sealing design in the air substrate body effectively isolates the heat generated by the heater itself and reduces the impact of high temperature on the matching structure at the bottom of the substrate bracket. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a top view schematic diagram of the present invention;

[0021] Figure 2 It is a front view structural schematic diagram of the present invention;

[0022] Figure 3 for Figure 2 A schematic diagram of the structure enlargement in the middle;

[0023] In the figure: 1 substrate support, 2 embedded substrate, 3 embedded opening, 4 cavity substrate body, 5 central gear, 6 output shaft, 7 star-shaped support plate, 8 transmission shaft, 9 planetary gear, 10 annular embedded groove, 11 annular embedded ring, 12 annular flow limiting groove, 13 annular flow blocking groove, 14 annular flow limiting slope, 15 annular flow blocking slope, 16 mounting groove, 17 heater. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] like Figure 1-3 As shown, the present invention provides a technical solution: a self-revolving base for a vapor phase epitaxial reaction chamber structure, comprising a substrate support 1 and an embedded substrate 2, the embedded substrate 2 is arranged on the inner side of the substrate support 1, a plurality of embedded openings 3 are provided in a circular array on the surface of the embedded substrate 2, a corresponding cavity substrate body 4 is provided in the embedded opening 3, the surfaces of the cavity substrate body 4 and the embedded substrate 2 are both made of high-purity carbon material, the high-purity carbon surfaces of the cavity substrate body 4 and the embedded substrate 2 are both coated with SiC coating, the SiC coating is resistant to high temperature, and ensures the stable deposition of GaN on the high-temperature surface of the cavity substrate body 4, the surface of the cavity substrate body 4, the surface of the embedded substrate 2 and the surface of the substrate support 1 are flush, an active gap is left between the annular side wall of the cavity substrate body 4 and the inner side wall of the embedded opening 3, to ensure the stability of the rotational activity between the structures, and the embedded substrate 2 Internal meshing teeth are arranged on the inner side of the ring, and an output shaft 6 for driving is arranged directly below the substrate holder 1. A central gear 5 is installed at the end of the output shaft 6. A planetary support plate 7 is connected to the output shaft 6 through a positioning bearing. A transmission shaft 8 corresponding to the cavity substrate main body 4 is movably installed on the star-shaped support plate 7. The star-shaped support plate 7 movably supports the transmission shaft 8. A planetary gear 9 meshing with the central gear 5 is installed on the transmission shaft 8. The planetary gear 9 meshes with the internal meshing teeth of the embedded substrate 2. The end of the transmission shaft 8 is connected to the corresponding cavity substrate main body 4. The axis center line of the output shaft 6 coincides with the vertical axis center line of the substrate holder 1. The output shaft 6 drives the star gear 9 to rotate through the central gear 5. The star gear 9 meshes with the internal meshing teeth of the embedded substrate 2 for transmission, thereby ensuring that the embedded substrate 2 and the cavity substrate main body 4 can perform effective self-revolution activities.

[0026] An annular embedding groove 10 is provided on the inner side wall of the embedding opening 3, and an annular embedding ring 11 matched with the annular embedding groove 10 is installed on the annular side wall of the cavity substrate body 1, and the annular embedding ring 11 is embedded in the inner side of the corresponding annular embedding groove 10, and the inner top of the annular embedding groove 10 is provided with an annular flow blocking groove 13 and an annular flow limiting groove 12 connected to each other, and the matching parts of the annular embedding ring 11 and the corresponding annular flow blocking groove 13 and annular flow limiting groove 12 are respectively provided with annular flow blocking slopes 15 and annular flow limiting slopes 14, and the annular flow blocking slopes 15 and annular flow limiting slopes 14 are respectively embedded in the corresponding annular flow blocking grooves 13 and annular flow limiting grooves 12.

[0027] An installation groove 16 is provided at the top of the inner cavity of the cavity substrate body 4, and a heater 17 for heating the process gas deposition is installed in the installation groove 16. The heating surface of the heater 17 is in contact with the inner top surface of the cavity substrate body 4, ensuring that the heat generated by the heater 17 itself is conducted through the surface of the cavity substrate body 4 to the maximum extent, ensuring that the process gas can be stably deposited on the surface of the cavity substrate body 4.

[0028] The electrical components mentioned in this article are all connected to an external main controller and a mains supply, and the main controller may be a conventional known device for controlling a computer or the like.

[0029] In summary, when the equipment is in use, the process gas is deposited on the surface of the cavity substrate body 4 and the embedded substrate 2, the heater 17 is heated, the output mechanism of the equipment drives the output shaft 6 to rotate, the output shaft 6 drives the star gear 9 to rotate through the central gear 5, the star gear 9 is meshed with the internal meshing teeth of the embedded substrate 2, the embedded substrate 2 and the cavity substrate body 4 revolve and rotate respectively, the cavity substrate body 4 rotates in the embedded opening 3 of the embedded substrate 2, and at this time the annular embedded ring 11 rotates in the corresponding annular embedded groove 10, when the process gas overflows through the gap between the cavity substrate body 4 and the inner wall of the embedded opening 3, the annular flow blocking slope 15 can effectively prevent the process gas from overflowing vertically downward, and the setting of the annular flow blocking groove 13 blocks the process gas that overflows and refluxes vertically downward, and at the same time, the setting of the annular flow limiting slope 14 and the annular limiting groove 12 further reduces the overflow reflux gas from being discharged through the gap between the annular embedded ring 11 and the annular embedded groove 10.

[0030] The control method of the present invention is automatic control through a controller. The control circuit of the controller can be implemented by simple programming by technicians in this field. The provision of power is also common knowledge in this field. The present invention is mainly used to protect mechanical devices, so the present invention will no longer explain the control method and circuit connection in detail.

[0031] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "comprising a reference structure" do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0032] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A self-revolving base for a vapor phase epitaxial reaction chamber structure, comprising a substrate support and an embedded substrate, characterized in that: The embedded substrate is arranged on the inner side of the substrate support, and a plurality of embedding openings are provided in a circular array on the surface of the embedded substrate, and a corresponding cavity substrate body is arranged in the embedding opening, and an internal meshing tooth is provided on the inner side of the circular surface of the embedded substrate, and an output shaft for driving is arranged directly below the substrate support, and a central gear is installed at the end of the output shaft, and a planetary support plate is connected to the output shaft through a positioning bearing, and a transmission shaft corresponding to the cavity substrate body is movably installed on the star-shaped support plate, and a planetary gear meshing with the central gear is installed on the transmission shaft, and the planetary gear meshes with the internal meshing teeth of the embedded substrate, and the end of the transmission shaft is connected to the corresponding cavity substrate body, and the surfaces of the cavity substrate body and the embedded substrate are both made of high-purity carbon material, and the high-purity carbon surfaces of the cavity substrate body and the embedded substrate are both coated with SiC coating, and the surface of the cavity substrate body, the surface of the embedded substrate and the surface of the substrate support are flush; An annular embedding groove is provided on the inner side wall of the embedding opening, and an annular embedding ring matched with the annular embedding groove is installed on the annular side wall of the cavity substrate body, the annular embedding ring is embedded in the inner side of the corresponding annular embedding groove, and an annular flow blocking groove and annular flow limiting groove connected to each other are provided on the inner top of the annular embedding groove, and an annular flow blocking slope and an annular flow limiting slope are respectively provided at the matching parts of the annular embedding ring and the corresponding annular flow blocking groove and the annular flow limiting groove, and the annular flow blocking slope and the annular flow limiting slope are respectively embedded in the corresponding annular flow blocking groove and the annular flow limiting groove; The inner cavity top of the cavity substrate body is provided with an installation groove, and a heater for heating the process gas deposition is installed in the installation groove.

2. The self-revolving base for a vapor phase epitaxy reaction chamber structure according to claim 1, characterized in that: A movable gap is left between the annular side wall of the cavity substrate body and the inner side wall of the embedding opening.

3. The self-revolving base for a vapor phase epitaxy reaction chamber structure according to claim 1, characterized in that: The heating surface of the heater is in contact with the inner top surface of the cavity substrate body.

4. The self-revolving base for a vapor phase epitaxy reaction chamber structure according to claim 1, characterized in that: The axis center line of the output shaft coincides with the vertical axis center line of the substrate support.

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