Vapor phase epitaxy device

By monitoring raw material information in real time and automatically replenishing raw materials in the vapor phase epitaxy device, the problems of uneven growth concentration and low crystal quality during GaN growth are solved, thereby improving the uniformity and crystal quality of GaN materials, while reducing system costs and avoiding raw material contamination.

CN224325454UActive Publication Date: 2026-06-05SUZHOU NANOWIN SCI & TECH
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Patent Information

Application Number
CN202521538445.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-07-23
Publication Date
2026-06-05
Estimated Expiration
2035-07-23

AI Technical Summary

Technical Problem

In existing technologies, GaN is prepared by changing the structure of the raw material boat or the distribution of the reactant gas. However, this process has several drawbacks, including high equipment costs, uneven GaN growth concentration which affects the uniformity of the GaN material, and a continuous decrease in GaN growth concentration as the raw material liquid level decreases, resulting in lower GaN crystal quality. Furthermore, artificial replenishment of raw materials can easily lead to contamination and oxidation.

Method used

Design a vapor phase epitaxy device comprising a reaction chamber, a raw material boat, a raw material replenishment chamber, a replenishment boat, and an automatic addition device. The device utilizes sensors to monitor raw material information in real time, and controls the automatic addition device to automatically replenish the raw material under preset conditions, ensuring dynamic balance of the raw material liquid level and avoiding contamination and oxidation caused by manual addition.

Benefits of technology

This approach ensures the uniformity and crystal quality of GaN materials, reduces system costs, avoids the impact of raw material fluctuations within the raw material boat on the growth rate and concentration, and ensures automatic replenishment of raw materials under constant temperature conditions to prevent oxidation.

✦ Generated by Eureka AI based on patent content.
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Abstract

The utility model belongs to the technical field of vapor phase epitaxy, and relates to a vapor phase epitaxy device which can be used for growing gallium nitride. The vapor phase epitaxy device comprises a control device and a growth device, the growth device comprises a reaction chamber, a raw material boat, a raw material supplementing chamber, a supplementing boat, an automatic adding device and a sensor, the raw material boat is arranged in the reaction chamber and is used for containing raw materials; the raw material supplementing chamber is communicated with the reaction chamber; the supplementing boat is arranged in the raw material supplementing chamber and is used for accommodating supplemented raw materials; the automatic adding device is arranged in the raw material supplementing chamber; the sensor is arranged in the reaction chamber, is coupled with the control device and is used for monitoring information of the raw materials; the control device obtains change information of the raw materials in the raw material boat based on the information of the raw materials and controls the automatic adding device to supplement the raw materials to the raw material boat when the change information meets preset raw material supplementing conditions. According to the scheme, the problem that the growth rate and the growth concentration are influenced by raw material fluctuation is solved through raw material monitoring and automatic supplementing closed loop.
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