Plasma processing apparatus
By setting up an independent high-frequency current path and improving the contact of the deposit shielding in the plasma processing device, the problem of uneven substrate processing in batch plasma processing devices was solved, achieving uniform etching of the substrate and reducing device costs.
CN113496864BActive Publication Date: 2026-05-29TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2021-03-24
- Publication Date
- 2026-05-29
Smart Images
Figure CN113496864B_ABST
Abstract
The present application provides a kind of plasma processing device, which includes: the cavity capable of accommodating multiple substrates;Multiple substrate support tables for supporting each substrate are arranged inside the chamber;Multiple high-frequency power supplies are arranged correspondingly with the multiple substrate support tables, which supply high-frequency electric power to the substrate support tables;And multiple shields are arranged correspondingly with the multiple substrate support tables in a way of dividing the interior of the chamber, defining a processing space capable of generating plasma, and forming a path of high-frequency current that does not interfere with each other between the multiple shields.According to the present application, uniform plasma treatment can be performed on multiple substrates in the plasma processing device.
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