Stage and substrate processing apparatus

Abstract

Provided are a stage and a substrate processing apparatus. Precision of environmental control in processing of a substrate is suppressed from decreasing. The stage includes a stage portion, a base, a circuit board, and a temperature adjustment portion. The stage portion is used to place a substrate. The base is disposed below the stage portion and has a space formed inside. The circuit board is disposed inside the space of the base and has an electronic circuit mounted thereon. The temperature adjustment portion adjusts a temperature of the circuit board.

Description

Technical Field

[0001] The various technical solutions and embodiments disclosed herein relate to a mounting stage and a substrate processing apparatus. Background Technology

[0002] It is known that a substrate processing apparatus is provided with multiple heaters and is capable of independently adjusting the temperature of multiple areas of a mounting stage used to mount semiconductor wafers (hereinafter referred to as substrates) (see, for example, Patent Document 1). In semiconductor manufacturing processes using such a substrate processing apparatus, the uniformity of substrate processing can be improved by adjusting the temperature of the substrate with high precision.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-228230 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a mounting stage and a substrate processing apparatus capable of suppressing the reduction in the accuracy of environmental control during substrate processing.

[0008] Solution for solving the problem

[0009] One technical solution disclosed herein is a mounting stage, which includes a mounting section, a base, a circuit board, and a temperature adjustment section. The mounting section is used to mount a substrate. The base is disposed below the mounting section and has a space formed inside it. The circuit board is disposed within the space of the base and carries electronic circuitry. The temperature adjustment section adjusts the temperature of the circuit board.

[0010] The effects of the invention

[0011] According to the various technical solutions and embodiments of this disclosure, it is possible to suppress the reduction in the precision of environmental control during substrate processing. Attached Figure Description

[0012] Figure 1 This is a schematic cross-sectional view showing an example of the structure of a substrate processing apparatus according to an embodiment of the present disclosure.

[0013] Figure 2 This is a diagram showing an example of the upper surface of an electrostatic chuck.

[0014] Figure 3 This is an enlarged sectional view showing an example of the detailed construction of the mounting platform.

[0015] Figure 4This is an enlarged sectional view showing another example of the detailed construction of the mounting platform.

[0016] Figure 5 This is an enlarged sectional view showing another example of the detailed construction of the mounting platform. Detailed Implementation

[0017] Hereinafter, embodiments of the mounting stage and substrate processing apparatus will be described in detail based on the accompanying drawings. Furthermore, the disclosed mounting stage and substrate processing apparatus are not limited to the following embodiments.

[0018] Furthermore, the temperature of the substrate placed on the mounting stage is adjusted by controlling the power supplied to the heaters embedded in the mounting stage using a control circuit. When the control circuit for controlling the heaters is located outside the chamber housing the mounting stage, wiring for transmitting control signals from the control circuit to the heaters is located between the mounting stage and the control circuit. If the number of heaters embedded in the mounting stage increases, the number of wires between the mounting stage and the control circuit also increases. This requires space for winding the wiring in the substrate processing apparatus, making it difficult to miniaturize the substrate processing apparatus. Therefore, it is considered to place the control circuit inside the mounting stage.

[0019] Here, depending on the substrate processing process, there are cases where the substrate temperature is set to below 0°C and cases where it is set to above 100°C. In these cases, the temperature of the control circuit disposed inside the mounting stage also becomes below 0°C or above 100°C. When the control circuit uses electronic circuits such as microcomputers, temperatures below 0°C or above 100°C can sometimes cause control circuit malfunctions. If the control circuit malfunctions, it becomes difficult to achieve the processing environment predetermined in the processing procedure. This leads to a decrease in the processing accuracy of the substrate.

[0020] Therefore, this disclosure provides a technique that can suppress the reduction in the accuracy of environmental control during substrate processing.

[0021] [Structure of substrate processing device 1]

[0022] Figure 1 This is a schematic cross-sectional view showing an example of the structure of a substrate processing apparatus 1 according to one embodiment of the present disclosure. The substrate processing apparatus 1 includes an apparatus main body 10 and a control device 11 of the control device main body 10. The substrate processing apparatus 1 of this embodiment is, for example, a capacitively coupled plasma etching apparatus.

[0023] The main body 10 of the device has a chamber 12. An internal space 12s is provided in the chamber 12. The chamber 12 includes a shell 13 formed into a generally cylindrical shape, for example, aluminum. The internal space 12s is provided in the shell 13. The shell 13 is electrically grounded. The inner wall surface of the shell 13, that is, the wall surface that divides the internal space 12s, is coated with a plasma-resistant film formed, for example, by anodizing.

[0024] An opening 12p is formed on the side wall of the housing 13, through which the substrate W passes during transport between the internal space 12s and the outside of the chamber 12. The opening 12p is opened and closed by a gate valve 12g.

[0025] A mounting stage 16 for mounting the substrate W is provided inside the housing 13. The mounting stage 16 is supported by a support portion 15, which is formed into a generally cylindrical shape from an insulating material such as quartz. The support portion 15 extends upward from the bottom of the housing 13.

[0026] The mounting stage 16 has a base 19 and an electrostatic chuck 20. The base 19 includes a cover plate 17 and a lower electrode 18. The electrostatic chuck 20 is disposed on the lower electrode 18 of the base 19. The substrate W is placed on the electrostatic chuck 20. The electrostatic chuck 20 has a body formed of an insulator and electrodes formed in a film shape. The electrodes of the electrostatic chuck 20 are electrically connected to a DC power supply (not shown). By applying a voltage from the DC power supply to the electrodes of the electrostatic chuck 20, an electrostatic force is generated on the surface of the electrostatic chuck 20. Under the action of the electrostatic force, the substrate W is attracted and held on the upper surface of the electrostatic chuck 20. The electrostatic chuck 20 is an example of a mounting portion.

[0027] In addition, for example Figure 2 As shown, the electrostatic chuck 20 is divided into multiple segmented regions 211. Figure 2 This is a diagram showing an example of the upper surface of the electrostatic chuck 20. A heater 200 is embedded inside each of the electrostatic chuck 20 in each segmented region 211. The temperature of the multiple segmented regions 211 is individually controlled using each heater 200. This improves the temperature uniformity of the substrate W surface. Furthermore, the heater 200 can also be positioned between the electrostatic chuck 20 and the lower electrode 18.

[0028] The electrostatic chuck 20 is provided with a pipe 25 for supplying a heat transfer gas, such as He gas, between the electrostatic chuck 20 and the substrate W. By controlling the pressure of the heat transfer gas supplied between the electrostatic chuck 20 and the substrate W, the thermal conductivity between the electrostatic chuck 20 and the substrate W can be controlled.

[0029] The lower electrode 18 is formed in a generally circular plate shape from a conductive material such as aluminum. A flow path 18f is formed within the lower electrode 18 for the flow of a refrigerant such as Freon. Refrigerant is supplied from a cooling unit (not shown) to the flow path 18f via piping 23a. The refrigerant, having circulated within the flow path 18f, returns to the cooling unit via piping 23b. By circulating the refrigerant, whose temperature is controlled by the cooling unit, within the flow path 18f, the lower electrode 18 can be cooled to a predetermined temperature. The lower electrode 18 is an example of an upper base.

[0030] The cover plate 17 is formed into a generally circular plate shape from a conductive material such as aluminum. The cover plate 17 is disposed below the lower electrode 18 and is electrically connected to the lower electrode 18. A recess is formed in the cover plate 17. A space 170 is formed within the base 19, enclosed by the lower surface of the lower electrode 18 and the recess of the cover plate 17. A circuit board 70 is disposed within the space 170 of the base 19. This circuit board 70 carries electronic circuitry such as a microcomputer for controlling multiple heaters 200 within the electrostatic chuck 20. The cover plate 17 is an example of a lower base.

[0031] A pipe 171 for supplying low-humidity gas into the space 170 is connected to the cover plate 17. By supplying low-humidity gas into the space 170, condensation within the space 170 is suppressed. In this embodiment, the low-humidity gas is, for example, dry air.

[0032] One end of the circuit board 70 is connected to a wiring 173, and the other end of the wiring 173 is connected to a power supply device 174 located outside the chamber 12. The electronic circuitry mounted on the circuit board 70 supplies power from the power supply device 174 via the wiring 173 to each heater 200. Additionally, one end of the circuit board 70 is connected to a wiring 172, which is a fiber optic cable or similar cable used for communication between the control device 11 and the electronic circuitry mounted on the circuit board 70. The other end of the wiring 172 is connected to the control device 11. The electronic circuitry mounted on the circuit board 70 controls the power supplied from the power supply device 174 to each heater 200 according to instructions from the control device 11. Furthermore, the other end of the wiring 172 can also be connected to another electronic circuit located outside the housing 13. In this case, this other electronic circuitry communicates with the control device 11 via a communication line such as a LAN, thereby relaying communication between the control device 11 and the electronic circuitry of the circuit board 70.

[0033] An edge ring 22, formed of a conductive material such as silicon, is provided on the outer peripheral region of the electrostatic chuck 20. The edge ring 22 is sometimes referred to as a focusing ring. The edge ring 22 is arranged to surround the substrate W placed on the electrostatic chuck 20.

[0034] A generally cylindrical cover member 28 made of insulating material is provided on the side of the mounting stage 16 in a manner that surrounds the mounting stage 16. The cover member 28 protects the side of the mounting stage 16 from the influence of the plasma generated in the internal space within 12 seconds.

[0035] An upper electrode 30 is provided above the mounting stage 16. The upper electrode 30 is supported on the upper part of the housing 13 by means of a member 32 made of an insulating material. The upper electrode 30 has a top plate 34 and a top plate holding part 36. The lower surface of the top plate 34 faces the internal space 12s. A plurality of gas ejection holes 34a are formed in the top plate 34, penetrating the top plate 34 in the thickness direction. The top plate 34 is formed, for example, of silicon or the like. Alternatively, the top plate 34 may also be formed, for example, of aluminum or the like, with a plasma-resistant coating applied to its surface.

[0036] The top plate retaining part 36 holds the top plate 34 in a way that allows for easy loading and unloading. The top plate retaining part 36 is formed of a conductive material, such as aluminum. A gas diffusion chamber 36a is formed inside the top plate retaining part 36. A plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The gas holes 36b communicate with the gas ejection holes 34a. A gas inlet 36c connected to the gas diffusion chamber 36a is provided in the top plate retaining part 36. One end of a pipe 38 is connected to the gas inlet 36c.

[0037] The other end of piping 38 is connected to a gas source assembly 40 via valve assembly 43, flow controller assembly 42, and valve assembly 41. Gas source assembly 40 includes multiple gas sources supplying gases contained in the etching gas. Valve assembly 41 and valve assembly 43 each include multiple valves (e.g., on / off valves). Flow controller assembly 42 includes multiple flow controllers, such as mass flow controllers.

[0038] Each gas source in the gas source group 40 is connected to the piping 38 via a corresponding valve in the valve group 41, a corresponding flow controller in the flow controller group 42, and a corresponding valve in the valve group 43. Gas from one or more gas sources selected from the plurality of gas sources in the gas source group 40 is supplied to the gas diffusion chamber 36a at an individually adjusted flow rate. The gas supplied to the gas diffusion chamber 36a diffuses within the gas diffusion chamber 36a and is sprayed into the internal space within 12 seconds via the gas port 36b and the gas ejection port 34a.

[0039] A partition 48 is provided between the side wall of the support portion 15 and the side wall of the housing 13. This partition 48 is formed, for example, of aluminum with a plasma-resistant coating applied to its surface. Multiple through holes extending along the thickness direction are formed in the partition 48. An exhaust pipe 52 is connected to the bottom of the housing 13 below the partition 48. An exhaust device 50 is connected to the exhaust pipe 52. This exhaust device 50 includes a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump. Using the exhaust device 50, the pressure in the internal space 12s can be reduced to a predetermined pressure.

[0040] A first RF power supply 61 is connected to the base 19 via a first matching unit 63. The first RF power supply 61 is a power source for generating first RF power for plasma generation. The frequency of the first RF power is in the range of 27 to 100 [MHz], for example, 60 [MHz]. The first matching unit 63 has a matching circuit for matching the output impedance of the first RF power supply 61 with the impedance of the load side (e.g., the base 19 side). Alternatively, the first RF power supply 61 can be connected to the upper electrode 30 via the first matching unit 63, instead of being connected to the base 19.

[0041] Additionally, a second RF power supply 62 is connected to the base station 19 via a second matching unit 64. The second RF power supply 62 is a power source that generates a second RF power for introducing ions into the substrate W. The frequency of the second RF power is lower than the frequency of the first RF power, and is a frequency in the range of 400 kHz to 13.56 MHz, for example, 400 kHz. The second matching unit 64 has a matching circuit for matching the output impedance of the second RF power supply 62 with the impedance of the load side (e.g., the base station 19 side).

[0042] The control device 11 includes a memory, a processor, and an input / output interface. The memory stores process data, programs, etc. Examples of memory types include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), and SSD (Solid State Drive). The processor executes programs read from the memory, thereby controlling various parts of the main body 10 via the input / output interface based on the process data stored in the memory. The processor can be a CPU (Central Processing Unit) or a DSP (Digital Signal Processor).

[0043] In the case of plasma etching using the substrate processing apparatus 1, firstly, the gate valve 12g is opened, and the substrate W is fed into the housing 13 using a transport robot (not shown), and placed on the electrostatic chuck 20. Then, the gate valve 12g is closed. Next, the gas inside the housing 13 is vented using the exhaust device 50, and one or more gases from the gas source group 40 are supplied to the internal space 12s at predetermined flow rates, adjusting the pressure of the internal space 12s to a predetermined pressure.

[0044] Furthermore, the lower electrode 18 is cooled by supplying a refrigerant, the temperature of which is controlled by a cooling unit (not shown), into the flow path 18f. Additionally, the power supplied from the power supply device 174 to the heaters 200 located in each segmented region 211 of the electrostatic chuck 20 is controlled by the electronic circuitry of the circuit board 70. Furthermore, the pressure of the heat transfer gas supplied between the electrostatic chuck 20 and the substrate W is controlled by the control device 11. Thus, the temperature of the substrate W placed in the electrostatic chuck 20 is adjusted to a predetermined temperature.

[0045] Then, first RF power from the first RF power source 61 and second RF power from the second RF power source 62 are supplied to the base 19. As a result, an RF electric field is formed between the upper electrode 30 and the base 19, and the gas supplied to the internal space 12s is plasma-enhanced. Then, the substrate W is etched using the ions, free radicals, etc. contained in the plasma generated in the internal space 12s.

[0046] [Details of platform 16]

[0047] Figure 3 This is an enlarged cross-sectional view showing an example of the detailed construction of the stage 16. In this embodiment, a heater 200 and a temperature sensor 201 are arranged in the electrostatic chuck 20 for each segmented region 211. The temperature sensor 201 is disposed between the heater 200 and the lower electrode 18. The temperature sensor 201 is, for example, a thermistor. Alternatively, the temperature sensor 201 may be disposed between the heater 200 and the upper surface of the electrostatic chuck 20.

[0048] Each heater 200 and temperature sensor 201 is connected to the circuit board 70 via wiring disposed in a through hole formed in the lower electrode 18. The circuit board 70 is provided with electronic circuitry 700 such as a microcomputer, which controls the power supplied to the corresponding heater 200 based on the temperature measured by each temperature sensor 201.

[0049] Temperature adjustment section 71 and temperature adjustment section 72 are disposed within a space 170 enclosed by the lower surface of the lower electrode 18 and the recess of the cover plate 17. Temperature adjustment section 71 includes a heat insulation member 710 and a heater 711. The heater 711 is disposed on the lower surface of the heat insulation member 710, which is supported on the lower surface of the lower electrode 18 via a spacer 73. The heat insulation member 710 and the spacer 73 are formed of resin, ceramic, or the like, which have heat insulation and insulating properties. The heater 711 is connected to the circuit board 70 via a wiring 702 and heats up based on the power supplied from the circuit board 70 via the wiring 702. The heat insulation member 710 is an example of a first heat insulation member, and the heater 711 is an example of a first heater. Alternatively, the wiring 702 may supply power directly to the heater 711 without passing through the circuit board 70.

[0050] One or more through holes 701 are formed in the circuit board 70, and one or more through holes 712 are formed in the heat insulation member 710. Thus, low-humidity gas supplied from the piping 171 to the space 170 is distributed throughout the space 170 via the through holes 701 and 712.

[0051] The temperature regulating unit 72 includes a protective member 720 and a spray-plating heater 721. The protective member 720, made of heat-insulating and insulating resin, ceramic, or the like, is provided on the upper surface of the recess in the cover plate 17. The spray-plating heater 721 is provided on the protective member 720. The spray-plating heater 721 is insulated from the cover plate 17 by the protective member 720. The spray-plating heater 721 is connected to the circuit board 70 via wiring 703 and heats up according to the power supplied from the circuit board 70 via wiring 703. Furthermore, the spray-plating heater 721 is formed by spray-plating a metal that serves as the heater onto the protective member 720, but the heater provided on the protective member 720 is not limited to the spray-plating heater 721. The heater in the temperature regulating unit 72 may, for example, be a film-shaped heater attached to the protective member 720. Additionally, the temperature regulating unit 71 may have the same structure as the temperature regulating unit 72.

[0052] Furthermore, spacers 74 are provided between the temperature adjustment unit 71 and the circuit board 70, and between the circuit board 70 and the temperature adjustment unit 72. The circuit board 70 is separately disposed from the heater 711, and the circuit board 70 is separately disposed from the spraying heater 721. This prevents the electronic circuit 700 mounted on the circuit board 70 from being overheated.

[0053] In this embodiment, since the spacer 73 is located between the lower surface of the lower electrode 18 and the heat insulation member 710, a space is formed between the lower surface of the lower electrode 18 and the heat insulation member 710. This suppresses heat exchange between the lower electrode 18 and the heater 711. Furthermore, if a space can be provided between the upper surface of the heat insulation member 710 and the lower surface of the lower electrode 18 by adjusting the distance between the circuit board 70 and the heat insulation member 710 using the spacer 74, the spacer 73 may not be necessary.

[0054] A temperature sensor (not shown) is provided on the circuit board 70. The electronic circuit 700 mounted on the circuit board 70 controls the power supplied to the heater 711 and the plating heater 721 based on the temperature measured by the temperature sensor. The heater 711 and the plating heater 721 generate heat based on the power supplied from the circuit board 70, thereby heating the circuit board 70 by means of gas in the space 170. As a result, by cooling the circuit board 70 with the lower electrode 18 after being cooled by the refrigerant circulating in the flow path 18f, the temperature of the electronic circuit 700 on the circuit board 70 can be prevented from going out of the allowable operating range of the electronic circuit 700.

[0055] The first embodiment has been described above. As described above, the mounting stage 16 of this embodiment includes an electrostatic chuck 20, a base 19, a circuit board 70, a temperature adjustment unit 71, and a temperature adjustment unit 72. The electrostatic chuck 20 is used to mount the substrate W. The base 19 is disposed under the electrostatic chuck 20 and has a space 170 formed inside it. The circuit board 70 is disposed within the space 170 of the base 19 and is equipped with electronic circuitry 700. The temperature adjustment unit 71 adjusts the temperature of the circuit board 70. As a result, temperature fluctuations of the electronic circuitry 700 can be suppressed within the allowable operating range of the electronic circuitry 700, and the reduction in the accuracy of environmental control during the processing of the substrate W can be suppressed.

[0056] Furthermore, in the above embodiment, the base 19 has a lower electrode 18 disposed on the side of the electrostatic chuck 20 and a cover plate 17 disposed below the lower electrode 18. A space 170 is formed within the base 19 between the lower electrode 18 and the cover plate 17. The temperature adjustment unit 71 has a heat insulation member 710 disposed between the lower surface of the lower electrode 18 and the circuit board 70 and a heater 711 disposed between the heat insulation member 710 and the circuit board 70. Since the heat insulation member 710 is located between the lower electrode 18 and the heater 711, heat exchange between the lower electrode 18 and the heater 711 can be suppressed.

[0057] Furthermore, in the above embodiment, a space is provided between the lower surface of the lower electrode 18 and the heat insulation member 710. This further suppresses heat exchange between the lower electrode 18 and the heater 711.

[0058] Furthermore, the substrate processing apparatus 1 of the above-described embodiment includes a chamber 12 for housing a substrate W and a mounting stage 16 disposed within the chamber 12 for placing the substrate W. The mounting stage 16 includes an electrostatic chuck 20, a base 19, a circuit board 70, and a temperature adjustment unit 71. The electrostatic chuck 20 is used to place the substrate W. The base 19 is disposed below the electrostatic chuck 20 and has a space 170 formed inside it. The circuit board 70 is disposed within the space 170 of the base 19 and is equipped with electronic circuitry 700. The temperature adjustment unit 71 adjusts the temperature of the circuit board 70. As a result, temperature fluctuations of the electronic circuitry 700 can be suppressed within the allowable operating range of the electronic circuitry 700, and the reduction in the accuracy of environmental control during substrate W processing can be suppressed.

[0059] [other]

[0060] Furthermore, the technology disclosed in this application is not limited to the above-described embodiments, and various modifications can be made within the scope of its intent.

[0061] For example, on the upper surface of the recess of the cover plate 17, for example Figure 4 As shown, a temperature adjustment unit 72 with the same structure as the temperature adjustment unit 71 may also be provided. Figure 4 This is an enlarged sectional view showing another example of the detailed construction of the mounting platform 16.

[0062] Figure 4 The illustrated temperature adjustment unit 72 includes a heat insulation member 722 and a heater 723. The heater 723 is disposed on the upper surface of the heat insulation member 722, which is supported on the upper surface of the cover plate 17 via a spacer 75. One or more through holes 724 are formed in the heat insulation member 722. The heat insulation member 722 and the spacer 75 are formed of resin, ceramic, or the like, which have heat insulation and insulating properties. The heater 723 is connected to the circuit board 70 via wiring 703 and heats up according to the power supplied from the circuit board 70 via wiring 703. The heat insulation member 722 is an example of a second heat insulation member, and the heater 723 is an example of a second heater.

[0063] exist Figure 4 In this example, since the spacer 75 is located between the upper surface of the cover plate 17 and the heat insulation member 722, a space is formed between the upper surface of the cover plate 17 and the heat insulation member 722. This suppresses heat exchange between the cover plate 17 and the heater 723. Using this structure, temperature fluctuations in the electronic circuit 700 can also be suppressed within the permissible operating range of the electronic circuit 700.

[0064] Furthermore, in the above embodiment, the gas in the space 170 is heated by a heater 711 and a spraying heater 721 provided in the space 170 of the base 19, but the disclosed technology is not limited to this. Other forms include... Figure 5 As shown, it can also heat the gas flowing in pipe 171. Figure 5 This is an enlarged sectional view showing another example of the detailed construction of the mounting platform.

[0065] exist Figure 5 In this example, a heater 175 is wound around the piping 171. The heater 175 is an example of a temperature regulating unit. The control device 11 obtains temperature information measured by a temperature sensor mounted on the circuit board 70 via wiring 172. Then, the control device 11 controls the power supplied to the heater 175 based on the obtained temperature information. By heating the piping 171 with the heater 175, the gas flowing in the piping 171 is heated, and the heated gas is supplied into the space 170. By supplying the heated gas into the space 170, the circuit board 70 is heated using the heated gas. With this structure, temperature fluctuations in the electronic circuit 700 can also be suppressed within the allowable operating range of the electronic circuit 700. Furthermore, Figure 5 The illustrated structure can also be combined with Figure 3 The illustrated structure or Figure 4 The illustrated structural combinations.

[0066] Furthermore, in the above embodiment, the gas within the space 170 is heated using a heater 711 and a spraying heater 721 located within the space 170 of the base 19, but the disclosed technology is not limited to this. For example, the space 170 of the base 19 may be filled with a material having heat-insulating and insulating properties (such as resin). The electronic circuit 700 generates some heat during operation. Therefore, by covering the electronic circuit 700 with resin or the like, the temperature drop of the electronic circuit 700 can be suppressed by its own heat generation.

[0067] Furthermore, in the above embodiment, the gas in the space 170 is heated by the heater 711 and the spraying heater 721 provided in the space 170 of the base 19, but the disclosed technology is not limited to this. Alternatively, for example, a heater can be embedded in the circuit board 70, and the electronic circuit 700 can be heated via the circuit board 70 using this heater. Alternatively, a sheet-like heater can be attached to the circuit board 70 and the electronic circuit 700.

[0068] Furthermore, while the above-described embodiment addresses the suppression of temperature drop in the electronic circuit 700, the disclosed technology is not limited thereto. Depending on the processing of the substrate W, there are cases where the temperature of the substrate W is set to 100°C or higher. When the temperature of the substrate W is set to 100°C or higher, the temperature of the refrigerant circulating in the flow path 18f can sometimes reach tens of°C. In such cases, cooling of the electronic circuit 700 is required, therefore a cooling component such as a Peltier element is provided instead of the heater 711 and the plating heater 721. Additionally, in the substrate processing apparatus 1, when processing is performed at various temperatures ranging from below 0°C to above 100°C, in addition to the heater 711 and the plating heater 721, a cooling component such as a Peltier element is also provided. This allows temperature fluctuations in the electronic circuit 700 to be suppressed within the permissible operating range of the electronic circuit 700.

[0069] Furthermore, in the above embodiment, the electronic circuit 700 controls the multiple heaters 200 within the electrostatic chuck 20, but the control performed by the electronic circuit 700 is not limited to this; the electronic circuit 700 can also perform various controls related to the mounting stage 16. These various controls related to the mounting stage 16 include, for example, the control of the electrostatic chuck 20 for the adsorption and release of the substrate W, and the control of the adsorption and release of the edge ring 22 when it is adsorbed onto the electrostatic chuck 20 by electrostatic force.

[0070] Furthermore, in the above embodiments, as an example of a plasma source, a substrate processing apparatus 1 using capacitively coupled plasma (CCP) was described, but the plasma source is not limited to this. Examples of plasma sources other than capacitively coupled plasma include inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), and helical wave-excited plasma (HWP).

[0071] Furthermore, in the above embodiments, an apparatus for processing substrate W using plasma etching was described as an example, but the disclosed technology is not limited to this. Any apparatus for processing substrate W is acceptable, and the disclosed technology can be applied to, for example, film deposition apparatus, modification apparatus, or cleaning apparatus.

[0072] Furthermore, the embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In fact, the above-described embodiments can be implemented in a wide variety of forms. In addition, the above-described embodiments can be omitted, substituted, or modified in various forms without departing from the appended claims and their spirit.

Claims

1. A platform, wherein, The platform includes: A mounting section, used to mount a substrate; A base is disposed under the mounting portion and has a space inside it; A circuit board, disposed within the space, and equipped with electronic circuitry; and A temperature adjustment unit, disposed within the space, adjusts the temperature of the circuit board. The temperature adjustment unit has: The first thermal insulation component; and A first heater is disposed above the circuit board and between the first insulating member and the circuit board. The temperature adjustment unit also has: The second insulation component; and The second heater is disposed below the circuit board and between the second insulation member and the circuit board.

2. The mounting platform according to claim 1, wherein, The base has: The upper base is disposed on the side of the mounting portion; and The lower base is disposed below the upper base. The space is formed between the upper base and the lower base. The first thermal insulation component is disposed between the lower surface of the upper base and the circuit board.

3. The mounting platform according to claim 2, wherein, A space is provided between the lower surface of the upper base and the first heat insulation member.

4. The mounting platform according to claim 2 or 3, wherein, The second heater is positioned between the lower base and the circuit board.

5. The mounting platform according to claim 4, wherein, The second thermal insulation component is disposed between the second heater and the upper surface of the lower base. A space is provided between the upper surface of the lower base and the second heat insulation member.

6. The mounting platform according to any one of claims 1 to 3, wherein, The platform also includes piping for supplying gas into the space of the platform. The temperature adjustment unit adjusts the temperature of the circuit board by means of the gas flowing in the piping and supplied to the space of the base.

7. The mounting platform according to claim 6, wherein, The temperature adjustment section has a heater wound around the piping.

8. The mounting platform according to claim 6, wherein, The gas supplied into the space of the base is dry air.

9. A substrate processing apparatus, wherein, The substrate processing apparatus has: The chamber, which houses the substrate; and A stage, disposed within the cavity, is used to hold the substrate. The mounting stage has: A mounting section for mounting the substrate; A base is disposed under the mounting portion and has a space inside it; A circuit board, disposed within the space, and equipped with electronic circuitry; and A temperature adjustment unit, disposed within the space, adjusts the temperature of the circuit board. The temperature adjustment unit has: The first thermal insulation component; and A first heater is disposed above the circuit board and between the first insulating member and the circuit board. The temperature adjustment unit also has: The second insulation component; and The second heater is disposed below the circuit board and between the second insulation member and the circuit board.

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