Detection device

Abstract

The present invention relates to a detection device, which can suppress various components in the detection device from being destroyed by ESD. The detection device comprises: a substrate; a terminal portion, which is arranged on the substrate and has a plurality of terminals; a first protection circuit portion, which is arranged on the substrate and has a plurality of first protection circuits; a selection circuit portion, which is arranged on the substrate and has a plurality of selection circuits; a second protection circuit portion, which is arranged on the substrate and has a plurality of second protection circuits; and a sensor portion, which is arranged on the substrate and has a plurality of sensors, wherein the first protection circuit portion is arranged between the terminal portion and the selection circuit portion, and the second protection circuit portion is arranged between the selection circuit portion and the sensor portion.

Description

Technical Field

[0001] One embodiment of the present invention relates to a detection device. Background Art

[0002] The detection device detects a touch position, a fingerprint, etc. The detection device has, for example, a sensor portion and a plurality of terminals disposed on a glass substrate. The plurality of terminals are electrically connected to the sensor portion. For example, when a person's finger approaches the sensor portion, a control signal is input to the plurality of terminals, and a detection signal from the sensor portion is output to the plurality of terminals. The detection device can detect a touch position, a fingerprint, etc. based on the output detection signal. On the other hand, electrostatic discharge (ESD) sometimes occurs in the atmosphere. A protection circuit is provided to prevent the various elements (for example, switches, electrodes, etc.) included in the plurality of terminals, the sensor portion, and the detection device from being damaged by ESD. The protection circuit is disclosed, for example, in Japanese Patent Gazette No. 2014-179662. Summary of the invention

[0003] However, the detection device having a sensor unit and a plurality of terminals on a glass substrate does not have a path to effectively remove ESD. Therefore, when ESD invades the detection device, for example, the plurality of terminals, the sensor unit, and various elements (e.g., switches, electrodes, etc.) included in the detection device are destroyed, and the detection device may not be able to operate.

[0004] One of the technical problems of the present invention is how to provide a detection device that can suppress various components in the detection device from being destroyed by ESD.

[0005] A detection device in one embodiment comprises: a substrate; a terminal portion, which is arranged on the substrate and has a plurality of terminals; a first protection circuit portion, which is arranged on the substrate and has a plurality of first protection circuits; a selection circuit portion, which is arranged on the substrate and has a plurality of selection circuits; a second protection circuit portion, which is arranged on the substrate and has a plurality of second protection circuits; and a sensor portion, which is arranged on the substrate and has a plurality of sensors, wherein the first protection circuit portion is arranged between the terminal portion and the selection circuit portion, and the second protection circuit portion is arranged between the selection circuit portion and the sensor portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a schematic plan view showing the structure of a detection device according to one embodiment of the present invention.

[0007] Figure 2 A schematic plan view showing the structure of a detection device according to an embodiment of the present invention.

[0008] Figure 3 It is a schematic cross-sectional view showing the structure of a detection device according to one embodiment of the present invention.

[0009] Figure 4 It is a schematic plan view showing the structure of a detection device according to one embodiment of the present invention.

[0010] Figure 5 This is a circuit diagram showing an example of a circuit configuration of a protection circuit according to an embodiment of the present invention.

[0011] Figure 6 It is a schematic plan view showing the structure of a detection device according to one embodiment of the present invention.

[0012] Figure 7 This is a schematic diagram showing an example of the layout of the first protection circuit according to one embodiment of the present invention.

[0013] Figure 8 This is a schematic diagram showing an example of the layout of the second protection circuit according to one embodiment of the present invention.

[0014] Fig. 9 1 is a schematic cross-sectional view showing a cross section along lines A1 and A2 of the first protection circuit according to one embodiment of the present invention.

[0015] Fig.10 1 is a schematic cross-sectional view showing a cross section along lines B1 and B2 of the second protection circuit according to one embodiment of the present invention.

[0016] Fig.11 This is a schematic cross-sectional view showing a cross section of a sensor according to an embodiment of the present invention.

[0017] Fig.12 This is a diagram showing an example of a rectangular wave propagating from a transmitting conductor to a sensor electrode via a finger according to an embodiment of the present invention.

[0018] Description of Reference Numerals

[0019] 10: detection device, 21r, 32a, 32b, 32c, 32d, 32e, 32f, 32g, 32h, 32j, 32k, 32m, 32n, 32o, 32p, 32q, 32r, 32s, 32t, 32u, 32v, 32x, 32y, 32z, 34a, 34b, 34c, 34d, 34e, 34f, 34g, 34h, 34j, 34k, 34m: contact hole, 32i, 32w: contact hole group, 31: first insulating layer, 33: second insulating layer, 35: third insulating layer layer, 38: fourth insulating layer, 39: fifth insulating layer, 42: selection signal, 44: selection signal, 46, 48: selection signal, 74: finger, 100: first substrate, 100a: first surface, 100b: second surface, 101: peripheral part, 102: gate driver, 103: second substrate, 103a: first surface, 104: third substrate, 104a: first surface, 104b: second surface, 105: terminal part, 105a: terminal, 106: external connection terminal part, 107: integrated circuit (Integrated Circuit, IC), 108, 113, 114, 116, 230, 316, 340, 450, 516: wiring, 109, 112, 202, 202A, 202B: terminal, 110: conductor for transmission, 111: connecting terminal, 115, 117: adhesive layer, 120: sensor, 120B: sensor, 121, 121A: sensor electrode, 12 1B: sensor electrode, 122: gate line, 124: data line, 126: electrode, 128, 358A, 358B, 362A, 362B, 378A, 378B, 382A, 382B: semiconductor layer, 200: terminal portion, 300: first protection circuit portion, 302: first protection circuit, 304: first rectifying element, 306: second rectifying element, 310, 410, 5 10: input terminal, 320, 420, 520: output terminal, 350, 350A, 350B: first transistor, 352, 352A, 352B, 372, 372A, 372B: first electrode, 354, 354A, 354B, 374, 374A, 374B: gate electrode, 356, 356A, 356B, 376, 376A, 376B: second electrode , 360, 360A, 360B: first resistance element, 370, 370A, 370B: second transistor, 380, 380A, 380B: second resistance element, 400: selection circuit unit, 402: selection circuit, 404: switch, 500: second protection circuit unit, 502: second protection circuit, 504: third rectifying element, 506: fourth rectifying element, 600: sensor unit. DETAILED DESCRIPTION

[0020] An embodiment is described below with reference to the accompanying drawings, etc. It should be noted that the present disclosure can be implemented in a plurality of different ways and is not limited to the explanation of the contents of the embodiments shown below. In addition, the accompanying drawings sometimes schematically represent the composition of each part, etc., in order to make the description clearer than the actual method, but it is an example after all and does not limit the interpretation of the present disclosure. In addition, in this specification and each figure, the same elements as those described in the accompanying drawings that have appeared are sometimes marked with the same figure mark (or a, b, A, B, etc. are added after the number), and the detailed description is appropriately omitted. In addition, the words "first" and "second" marked on each element are convenient identifiers used to distinguish the elements, and do not have more meaning unless otherwise specified.

[0021] In addition, in this specification, a certain component or region can be set to be located "above (or below)" other components or regions. Unless otherwise specified, it not only includes the situation of being located directly above (or directly below) other components or regions, but also includes the situation of being located above (or below) other components or regions, that is, it also includes the situation of other components being included above (or below) other components or regions. In addition, in the following description, unless otherwise specified, when observed from a cross-section, the side on which the display element is configured relative to the substrate is referred to as "above" or "upper surface", and the opposite side is described as "below" or "lower surface".

[0022] In addition, in the present specification, unless otherwise expressly stated, expressions such as “α includes A, B, or C”, “α includes any one of A, B, and C”, and “α includes one selected from the group consisting of A, B, and C” do not exclude the case where α includes a plurality of combinations of A to C. Furthermore, these expressions do not exclude the case where α includes other elements.

[0023] The detection device of one embodiment may be, for example, a touch sensor capable of detecting the position where a finger approaches or touches, or a display device having a touch sensor, or a sensor device capable of detecting a fingerprint. In the specification and claims of this application (hereinafter referred to as "this specification, etc."), the premise of the detection device as one of the embodiments is a sensor device capable of detecting a fingerprint (hereinafter referred to as a fingerprint sensor).

[0024] <1. Configuration of the detection device 10 >

[0025] Figure 1 , Figure 2 It is a schematic plan view showing the structure of the detection device 10 according to one embodiment. Figure 3 It is a schematic cross-sectional view showing a cross section of the detection device 10 according to one embodiment. Figure 1 to Figure 3The structure of the detection device 10 shown is an example, and the structure of the detection device 10 is not limited to Figure 1 to Figure 3 The composition shown.

[0026] like Figure 1 As shown, the detection device 10 has a first substrate 100, a peripheral portion 101, a terminal portion 200, a first protection circuit portion 300, a selection circuit portion 400, a second protection circuit portion 500 and a sensor portion 600. The terminal portion 200 has a plurality of terminals 202. The first protection circuit portion 300 has a plurality of first protection circuits 302. The selection circuit portion 400 has a plurality of selection circuits 402. The second protection circuit portion 500 has a plurality of second protection circuits. The sensor portion 600 has a plurality of sensor electrodes 121A, a plurality of gate lines 122 and a plurality of data lines 124. The first protection circuit portion 300 is disposed between the terminal portion 200 and the selection circuit portion 400, and the second protection circuit portion 500 is disposed between the selection circuit portion 400 and the sensor portion 600.

[0027] like Figure 2 As shown, the detection device 10 includes a first substrate 100, a terminal portion 200, a first protection circuit portion 300, a selection circuit portion 400, a second protection circuit portion 500, a sensor portion 600, a gate driver 102, a second substrate 103, a third substrate 104, a terminal portion 105, an external connection terminal portion 106, an integrated circuit (IC) 107, a plurality of wirings 108, a plurality of wirings 114, and a conductor for transmission 110. The terminal portion 105 includes a plurality of terminals 105a.

[0028] like Figure 3 As shown, the detection device 10 has a first substrate 100, a terminal 202, a second substrate 103, a third substrate 104, a terminal 105a, an external connection terminal portion 106, an IC 107, a wiring 114, a conductor 110 for transmission, a plurality of connection terminals 111, a wiring 116, a plurality of terminals 109, a wiring 113, a plurality of terminals 112, an adhesive layer 115, and an adhesive layer 117. The second substrate 103 has a terminal 105a, a plurality of connection terminals 111, and a wiring 116. The third substrate 104 has a plurality of terminals 109, a plurality of terminals 112, an external connection terminal portion 106, a wiring 113, and a plurality of wirings 108 ( Figure 2 ).

[0029] like Figure 1 to Figure 3As shown, the transmitting conductor 110, the terminal portion 200, the first protection circuit portion 300, the selection circuit portion 400, the second protection circuit portion 500, the sensor portion 600, and the gate driver 102 are provided on the first surface 100a of the first substrate 100. In addition, the transmitting conductor 110, the terminal portion 200, the first protection circuit portion 300, the selection circuit portion 400, the second protection circuit portion 500, and the gate driver 102 are provided in the peripheral portion 101.

[0030] The first substrate 100 is electrically connected to the terminal portion 105 using a plurality of wirings 114. More specifically, the first substrate 100 is bonded to the first surface 103a of the second substrate 103 using an adhesive layer 115. The wirings 114 electrically connect the terminals 202 included in the first substrate 100 and the terminals 105a included in the terminal portion 105.

[0031] The second substrate 103 is bonded to the first surface 104a of the third substrate 104 using an adhesive layer 117. A plurality of terminals 109 are provided on the first surface 104a of the third substrate 104. A plurality of connection terminals 111 are provided on the second surface 103b of the second substrate 103. Wiring 116 is provided inside the second substrate 103. Wiring 116 connects a plurality of terminals 105a to a plurality of connection terminals 111. The adhesive layer 117 bonds each of the plurality of connection terminals 111 to each of the plurality of terminals 109 provided on the first surface 104a of the third substrate 104. Here, one of the plurality of terminals 105a may be connected to one of the plurality of connection terminals 111, or two or more of the plurality of terminals 105a may be connected to one of the plurality of connection terminals 111, or two or more of the plurality of terminals 105a may be connected to two or more of the plurality of connection terminals 111.

[0032] Terminals 109, terminals 112, IC 107, and external connection terminal portion 106 are provided on first surface 104a of third substrate 104. Wiring 113 passes through the interior of third substrate 104 and connects terminal 109 and IC 107. Multiple wirings 108 are provided inside third substrate 104. Multiple wirings 108 connect IC 107 and transmission conductor 110.

[0033] The first substrate 100 includes an insulating material. For example, the first substrate 100 is a glass substrate or a substrate having plasticity. The substrate having plasticity is, for example, a substrate using polyimide, acrylic acid, epoxy resin, or polyethylene terephthalate. The substrate having plasticity is sometimes referred to as a base material, a base film, or a sheet base material. In this specification, etc., an example of the first substrate 100 is a glass substrate.

[0034] The second substrate 103 is made of an insulating material. The second substrate 103 can be made of, for example, a rigid substrate. Specifically, the second substrate 103 is a printed circuit board (PCB). The second substrate 103 is thicker than the third substrate 104 and has high rigidity.

[0035] The third substrate 104 is made of an insulating material. For example, a flexible printed circuit (FPC) substrate can be used as the third substrate 104. The third substrate 104 is thinner than the second substrate 103 and has high flexibility.

[0036] In addition, the second substrate 103 may also be an FPC circuit substrate, and the third substrate 104 may also be a PCB. In this case, for example, the second surface 100b of the first substrate 100 is bonded to the first surface 104a of the third substrate 104, at least a portion of the plurality of terminals 202 is connected to at least a portion of the plurality of terminals 109 using wiring 114, another portion of the terminals 202 is connected to the plurality of terminals 105a using another FPC circuit substrate, and at least a portion of the plurality of connection terminals 111 is connected to at least a portion of the plurality of terminals 109 using wiring of another FPC circuit substrate.

[0037] The terminal 105a, the connection terminal 111, the terminal 109, the terminal 112, the wiring 116, the wiring 113, and the wiring 108 are formed of, for example, a metal material. The metal material is, for example, copper (Cu).

[0038] Adhesive layer 115 and adhesive layer 117 include insulating materials. Adhesive layer 115 and adhesive layer 117 may be made of, for example, anisotropic conductive film (ACF) or anisotropic conductive paste (ACP).

[0039] For example, a gold (Au) wire or a platinum (Pt) wire can be used as the wiring 114. The wiring 114 connects the terminal 202 and the terminal 105a using a so-called wire bonding technique.

[0040] The external connection terminal portion 106 has a plurality of terminals (not shown). The external connection terminal portion 106 is connected to an external device using an FPC substrate, so that the detection device 10 can input and output signals to and from the external device. For example, when the external device is a display device, the display device can display the fingerprint based on the signal detected by the detection device 10.

[0041] In addition, the first substrate 100, the wiring 114, and the portion of the first surface 103a of the second substrate 103 exposed from the adhesive layer 115 can be covered with an organic resin material or a coating layer. For example, the organic resin material is a thermosetting resin with epoxy resin as a main component. By covering the first substrate 100 with an organic resin material or a coating layer, damage to the sensor electrode 121A can be suppressed.

[0042] In the fingerprint sensor of one embodiment, the transmitting conductor 110 functions as a transmitting electrode (Tx electrode), and the sensor electrode 121 functions as a receiving electrode (Rx electrode). For example, the IC 107 supplies a driving signal Vsig ( Fig.12 ) or power supply voltage. When a finger touches the detection device 10, the electric field between the transmitting conductor 110 and the sensor electrode 121 changes. The sensor electrode 121 detects (inputs) the change of the drive signal Vsig based on the changed electric field, and uses the detected change of the drive signal Vsig as the detection signal Vdet ( Fig.12 ) is sent (output) to IC107 via data line 124. IC107 can detect fingerprints by inputting detection signal Vdet and analyzing detection signal Vdet.

[0043] In the existing detection device in which the sensor part and a plurality of terminals are arranged on a glass substrate, a protection circuit is provided between the terminal and the sensor part. In contrast, in the detection device 10 of one embodiment, the first protection circuit part 300 is provided between the terminal part 200 and the selection circuit part 400, so that, for example, the first protection circuit part 300 suppresses ESD from intruding into the selection circuit part 400 or the sensor part 600 from the terminal part 200 side. In addition, in the detection device 10 of one embodiment, by also providing the second protection circuit part 500 between the selection circuit part 400 and the sensor part 600, for example, ESD is suppressed from intruding into the selection circuit part 400 from the sensor part 600 side. Therefore, in the detection device 10 of one embodiment, a protection circuit is provided at least in two locations, so that ESD intruding from different paths can be suppressed, and various components in the detection device can be more effectively suppressed from being destroyed by ESD. As a result, the detection device 10 of one embodiment can suppress the destruction of various components, so that, for example, fingerprints can be accurately detected.

[0044] Furthermore, the detection device 10 of one embodiment may include a metal wiring extending from the terminal portion 200 to surround the four sides of the sensor portion 600 and also arranged in the sensor portion 600. As a result, the detection device 10 of one embodiment can discharge the ESD generated in the atmosphere using the metal wiring in the first stage and discharge it using the first protection circuit 302 and the second protection circuit 502 in the second stage.

[0045] <2. Configuration from the terminal section 200 to the sensor section 600>

[0046] Figure 4 It is a schematic plan view showing the configuration from the terminal unit 200 to the sensor unit 600 included in the detection device 10 according to one embodiment. Figure 1 to Figure 4 The structure of the detection device 10 shown is an example, and the structure of the detection device 10 is not limited to Figure 1 to Figure 4 As shown in the figure. Figure 1 to Figure 3 The description of the same or similar structures is omitted here.

[0047] The terminal portion 200 has a plurality of terminals 202. The plurality of terminals 202 include terminals 202A and 202B. Each of the plurality of terminals 202 is electrically connected to each of the plurality of wirings 230. For example, a signal or a power supply voltage supplied by IC107 is input to the plurality of terminals 202. The signal or the power supply voltage input to the plurality of terminals 202 is provided to the gate driver 102 via wiring, for example. The signal and the power supply voltage are, for example, a signal and a power supply voltage for actuating the sensor portion 600 or the transmitting conductor 110. The signal and the power supply voltage are, for example, a control signal for controlling the gate driver 102, a drive signal Vsig for detecting fingerprints, and a power supply voltage for driving the gate driver 102. In addition, the number of terminals 202 can be arbitrary as long as it is multiple. The number of terminals 202 can be appropriately determined according to the purpose or specification of the detection device 10.

[0048] The first protection circuit unit 300 includes a plurality of first protection circuits 302. The first protection circuit 302 includes an input terminal 310, a first rectifying element 304, a second rectifying element 306, a wiring 316, and an output terminal 320. The wiring 316 of the first protection circuit 302 is connected to the terminal 202A via the input terminal 310.

[0049] The first rectifying element 304 is provided between the wiring 316 and the low voltage power supply line VL. The first rectifying element 304 suppresses the current from flowing in the direction from the wiring 316 to the low voltage power supply line VL. That is, when a voltage higher than the voltage supplied to the low voltage power supply line VL is supplied to the wiring 316, the first rectifying element 304 does not allow the current to flow in the direction from the wiring 316 to the low voltage power supply line VL, and when a voltage lower than the voltage supplied to the low voltage power supply line VL is supplied to the wiring 316, the first rectifying element 304 allows the current to flow in the direction from the low voltage power supply line VL to the wiring 316.

[0050] The second rectifying element 306 is provided between the high voltage power supply line VH and the wiring 316. The second rectifying element 306 suppresses the current from flowing in the direction from the high voltage power supply line VH to the wiring 316. That is, when a voltage lower than the voltage supplied to the high voltage power supply line VH is supplied to the wiring 316, the second rectifying element 306 does not allow the current to flow in the direction from the wiring 316 to the high voltage power supply line VH, and when a voltage higher than the voltage supplied to the high voltage power supply line VH is supplied to the wiring 316, the second rectifying element 306 allows the current to flow in the direction from the wiring 316 to the high voltage power supply line VH.

[0051] In this specification, etc., the voltage supplied to the high voltage power supply line VH is a higher voltage than the voltage supplied to the low voltage power supply line VL. The voltage supplied to the high voltage power supply line VH is, for example, VDD, and the voltage supplied to the low voltage power supply line VL is, for example, VSS or GND.

[0052] In the first protection circuit 302, when a voltage lower than the voltage supplied to the low voltage power supply line VL is supplied to the terminal 202, the first rectifying element 304 causes a current to flow from the low voltage power supply line VL to the direction of the wiring 316. That is, the first protection circuit 302 can increase the ESD of a voltage lower than the voltage supplied to the low voltage power supply line VL to the voltage supplied to the low voltage power supply line VL. In addition, in the first protection circuit 302, when a voltage higher than the voltage supplied to the high voltage power supply line VH is supplied to the terminal 202, the second rectifying element 306 causes a current to flow from the high voltage power supply line VH to the direction of the wiring 316. That is, the first protection circuit 302 can reduce the ESD of a voltage higher than the voltage supplied to the high voltage power supply line VH to the voltage supplied to the high voltage power supply line VH. Therefore, the first protection circuit 302 can protect the elements constituting the selection circuit 402 and the sensor unit 600 from the influence of ESD.

[0053] In addition, for the sake of convenience, an example in which the low voltage power supply line VL supplies one voltage is described here. The actual low voltage power supply line VL supplies at least two voltages. Therefore, the detection device 10 of one embodiment has a first low voltage power supply line VL1 and a second low voltage power supply line VL2. For example, the voltage supplied to the first low voltage power supply line VL1 is VSS, and the voltage supplied to the second low voltage power supply line VL2 is GND. Which of the first low voltage power supply line VL1 and the second low voltage power supply line VL2 to connect the first rectifying element 304 can be predetermined and laid out according to the amplitude of the signal input to the terminal 202.

[0054] The selection circuit unit 400 includes a plurality of selection circuits 402. A portion of the plurality of selection circuits 402 is electrically connected to one first protection circuit 302. For example, four selection circuits 402 are electrically connected to one first protection circuit 302 ( Figure 1 ). The wiring 340 connects the output terminal 320 to the input terminals 410 of the four selection circuits 402. Figure 4 In FIG. 1 , one of the four selection circuits 402 is focused on. The selection circuit 402 is, for example, a switch 404 having an input terminal 410 and an output terminal 420. The switch 404 connects the input terminal 410 and the output terminal 420 by, for example, providing an on signal of the selection signal 48 among the plurality of selection signals 42, 44, 46, 48, etc. provided by the IC 107. The on signal is a signal that supplies a voltage that connects the input terminal 410 and the output terminal 420. For example, the on signal can be either a high level (High) or a low level (Low). The wiring 340 connects the output terminal 320 of the first protection circuit 302 to the input terminal 410 of the selection circuit 402. Since the output terminal 320 is connected to the wiring 316, the wiring 340 is connected to the wiring 316. In addition, the wiring 340 may be the same as the wiring 316, and the wiring 340 may be connected to the wiring 316 via a connection point such as a contact hole in the manufacturing process. Among the plurality of selection circuits 402, the selection circuits 402 supplied with the same selection signal by IC 107 simultaneously conduct input terminal 410 and output terminal 420. Selection circuit 402 is selected by selection signal 48, and supplies the drive signal supplied to terminal 202 to sensor 120B electrically connected to selection circuit 402.

[0055] The second protection circuit unit 500 includes a plurality of second protection circuits 502. The second protection circuit 502 includes an input terminal 510, a third rectifying element 504, a fourth rectifying element 506, a wiring 516, and an output terminal 520. The wiring 450 connects the output terminal 420 of the switch 404 to the input terminal 510 of the second protection circuit 502. The wiring 516 of the second protection circuit 502 is connected to the output terminal 420 of the switch 404 using the input terminal 510. Since the input terminal 510 is connected to the wiring 516, the wiring 450 is connected to the wiring 516. In addition, the wiring 450 may be the same as the wiring 516, and the wiring 450 may be connected to the wiring 516 via a connection point such as a contact hole in the manufacturing process.

[0056] The third rectifying element 504 is provided between the wiring 516 and the low voltage power supply line VL. The third rectifying element 504 suppresses the current from flowing in the direction from the wiring 516 to the low voltage power supply line VL. That is, when a voltage higher than the voltage supplied to the low voltage power supply line VL is supplied to the wiring 516, the third rectifying element 504 does not allow the current to flow in the direction from the wiring 516 to the low voltage power supply line VL, and when a voltage lower than the voltage supplied to the low voltage power supply line VL is supplied to the wiring 516, the third rectifying element 504 allows the current to flow in the direction from the low voltage power supply line VL to the wiring 516. Thus, the second protection circuit 502 can raise the ESD of a voltage lower than the voltage supplied to the low voltage power supply line VL to the voltage supplied to the low voltage power supply line VL.

[0057] The fourth rectifying element 506 is provided between the high voltage power supply line VH and the wiring 516. The fourth rectifying element 506 suppresses current from flowing in the direction from the high voltage power supply line VH to the wiring 516. That is, when a voltage lower than the voltage supplied to the high voltage power supply line VH is supplied to the wiring 516, the fourth rectifying element 506 does not allow current to flow in the direction from the wiring 516 to the high voltage power supply line VH, and when a voltage higher than the voltage supplied to the high voltage power supply line VH is supplied to the wiring 516, the fourth rectifying element 506 allows current to flow in the direction from the wiring 516 to the high voltage power supply line VH. Thus, the second protection circuit 502 can reduce ESD of a voltage higher than the voltage supplied to the high voltage power supply line VH to the voltage supplied to the high voltage power supply line VH.

[0058] Therefore, the second protection circuit 502 can suppress the intrusion of ESD into the element provided on the opposite side of the second protection circuit 502 from the sensor unit 600. Therefore, the second protection circuit 502 can protect the selection circuit 402 and the terminal 202 from the influence of ESD.

[0059] The sensor unit 600 includes a plurality of sensors 120. The plurality of sensors 120 are arranged in a matrix in a first direction (D1) and a second direction (D2) intersecting the first direction. The plurality of sensors 120 each include at least one transistor and a sensor electrode 121. The transistor includes a gate electrode, a first electrode, and a second electrode. One of the first electrode and the second electrode is a source electrode, and the other is a drain electrode. The gate electrode is connected to a gate line 122, the first electrode is electrically connected to a data line 124, and the second electrode is electrically connected to a sensor electrode 121. The data line 124 is connected to an output terminal 520 of the second protection circuit 502.

[0060] The sensor 120 may have two transistors and a sensor electrode 121. In this case, the polarities of the two transistors are different. For example, one is an n-type transistor and the other is a p-type transistor. Alternatively, the gate electrodes of the two transistors are connected to the same gate line 122, the sensor electrode 121 and the first electrodes of the two transistors are electrically connected to each other, the second electrode of one transistor is connected to the data line, and the second electrode of the other transistor is connected to the common potential line. The common potential line is a wiring that supplies a common potential to multiple sensors 120 in common. The potential supplied by the common potential line is, for example, a potential that serves as a reference potential, such as GND, VSS, or 0V.

[0061] The second protection circuit 502 is provided between the sensor unit 600 and the selection circuit unit 400. Therefore, the second protection circuit 502 can also suppress ESD from entering from the terminal 202 through the first protection circuit 302 and the selection circuit 402. Therefore, the second protection circuit 502 can protect the sensor unit 600 from the influence of ESD.

[0062] A plurality of terminals 202, a plurality of first protection circuits 302, and a plurality of second protection circuits 502 are arranged in a direction parallel or substantially parallel to the first direction (D1), and the details are described later. For a direction parallel or substantially parallel to the first direction (D1), the interval Tpit between the terminal 202A and the terminal 202B is the same or substantially the same as the interval DFpit between the first protection circuits 302 adjacent to each other. For a direction parallel or substantially parallel to the first direction (D1), the interval DFpit between the first protection circuits 302 adjacent to each other is longer than the interval DSpit between the second protection circuits 502 adjacent to each other. In addition, in a direction parallel or substantially parallel to the second direction (D2), the length of the first protection circuit 302 is longer than the length of the second protection circuit 502. In addition, the number of the first protection circuits 302 is equal to the number of the terminals 202, and the number of the second protection circuits 502 is equal to the number of the data lines 124. In a wiring path from a terminal 202 to a data line 124 via a selection circuit 402 , a first protection circuit 302 is provided on the wiring path between the terminal 202 and the selection path, and a second protection circuit 502 is provided on the wiring path between the selection circuit 402 and the data line 124 .

[0063] <3. Configuration of protection circuit>

[0064] Figure 5 1 is a circuit diagram showing a circuit configuration of a protection circuit according to an embodiment. Figure 5 The configuration of the protection circuit shown is an example, and the configuration of the protection circuit of one embodiment is not limited to Figure 5 As shown in the figure. Figure 1 to Figure 4The description of the same or similar structures is omitted here.

[0065] like Figure 5 As shown, the protection circuit has an input terminal IN, an output terminal OUT, a first transistor 350, a first resistor 360, a second transistor 370, and a second resistor 380. The first transistor 350 has a gate electrode 354, a first electrode 352, and a second electrode 356. One of the first electrode 352 and the second electrode 356 is a source electrode, and the other is a drain electrode. The function of each electrode as a source and the function of each electrode as a drain can also be exchanged by applying a voltage to the first electrode 352 and the second electrode 356. The second transistor 370 has a gate electrode 374, a first electrode 372, and a second electrode 376. In the second transistor 370, as in the first transistor 350, one of the first electrode 372 and the second electrode 376 is a source electrode, and the other is a drain electrode. The function of each electrode as a source and the function of each electrode as a drain can also be exchanged by applying a voltage to the first electrode 372 and the second electrode 376.

[0066] The first resistor 360 is connected between the low voltage power supply line VL and the gate electrode 354 of the first transistor 350. The second resistor 380 is connected between the input terminal IN and the gate electrode 374 of the second transistor 370. The first electrode 352 of the first transistor 350 is connected to the low voltage power supply line VL. The second electrode 356 of the first transistor 350 is connected to the input terminal IN, the first electrode 372 of the second transistor, and the output terminal OUT. The second electrode 376 of the second transistor 370 is connected to the high voltage power supply line VH.

[0067] Figure 5 The structure of the protection circuit shown is applied to the first protection circuit 302 and the second protection circuit 502 of one embodiment. Specifically, the first rectifier element 304 and the third rectifier element 504 include a first transistor 350 that is diode-connected via a first resistor element 360. In addition, the second rectifier element 306 and the fourth rectifier element 506 include a second transistor 370 that is diode-connected via a second resistor element 380. Diode connection refers to a connection that makes a transistor equivalent to a diode. Specifically, it refers to short-circuiting the gate electrode and the drain electrode of the transistor.

[0068] The detection device 10 of one embodiment has a first protection circuit 302 between the terminal 202 and the selection circuit 402, and has a second protection circuit 502 between the selection circuit 402 and the sensor unit 600. That is, the detection device 10 of one embodiment has two protection circuits at different positions, respectively, so that both ESD intruding from the terminal side and ESD intruding from the sensor unit 600 side can be suppressed.

[0069] <4. Configuration of the First Protection Circuit 302 and the Second Protection Circuit 502 >

[0070] Figure 6 is Figure 2 A circuit diagram showing an example of the circuit configuration of the first protection circuit 302 and the second protection circuit 502 in the configuration from the terminal unit 200 to the sensor unit 600 included in the detection device 10 according to the embodiment shown. Figure 6 The structure of the detection device 10 shown is an example, and the structure of the detection device 10 is not limited to Figure 6 For Figure 1 to Figure 5 The description of the same or similar structures is omitted here.

[0071] Terminal 202, connection between terminal 202 and first protection circuit 302, connection between first protection circuit 302 and selection circuit, and configuration related to selection circuit 402 to sensor 120B Figure 2 The structure shown is the same, so its description is omitted here.

[0072] The first protection circuit 302 can be applied Figure 5 Specifically, Figure 6 As shown, there is an input terminal 310, an output terminal 320, a first transistor 350A, a first resistor 360A, a second transistor 370A and a second resistor 380A. The first transistor 350A and the second transistor 370A have a structure in which three transistors with the same or substantially the same channel width are connected in series. In addition, the channel lengths of the three transistors are also the same or substantially the same. The gate electrode 354A of the first transistor 350A is diode-connected to the first electrode 352A via the first resistor 360A. The gate electrode 374A of the second transistor 370A is diode-connected to the first electrode 372A via the second resistor 380A. In addition, the number of transistors is not limited to 3.

[0073] The first resistor 360A is connected between the low voltage power supply line VL and the gate electrode 354A. The second resistor 380A is connected between the input terminal 310 and the gate electrode 374A. The first electrode 352A is connected to the low voltage power supply line VL. The second electrode 356A is connected to the input terminal 310, the first electrode 372A, the wiring 316, and the output terminal 320. The second electrode 376A is connected to the high voltage power supply line VH.

[0074] The second protection circuit 502 can be applied similarly to the first protection circuit 302. Figure 5 Specifically, Figure 6As shown, there is an input terminal 510, an output terminal 520, a first transistor 350B, a first resistor 360B, a second transistor 370B and a second resistor 380B. The channel widths of the first transistor 350B and the second transistor 370B are the same or substantially the same. In addition, the channel lengths of the first transistor 350B and the second transistor 370B are also the same or substantially the same. The gate electrode 354B of the first transistor 350B is diode-connected to the first electrode 352B via the first resistor 360B. The gate electrode 374B of the second transistor 370B is diode-connected to the first electrode 372B via the second resistor 380B.

[0075] The first resistor 360B is connected between the low voltage power supply line VL and the gate electrode 354B. The second resistor 380B is connected between the input terminal 510 and the gate electrode 374B. The first electrode 352B is connected to the low voltage power supply line VL. The second electrode 356B is connected to the input terminal 510, the first electrode 372B, the wiring 516 and the output terminal 520. The second electrode 376B is connected to the high voltage power supply line VH.

[0076] The channel widths of the first transistor 350A and the second transistor 370A included in the first protection circuit 302 are longer than the channel widths of the first transistor 350B and the second transistor 370B included in the second protection circuit 502. The resistance value of the first resistor 360A, the resistance value of the second resistor 380A, the resistance value of the first resistor 360B, and the resistance value of the second resistor 380B are the same or substantially the same.

[0077] The detection device 10 of one embodiment has a first protection circuit 302 between the terminal 202 and the selection circuit 402, and a second protection circuit 502 between the selection circuit 402 and the sensor unit 600. Assuming that the ESD intruding from the terminal 202 side into the first protection circuit 302 is mainly static electricity stored in the manufacturing process, it can be considered that it will be applied more steadily over a predetermined time compared with the ESD intruding from the sensor unit 600 side into the second protection circuit 502. In the detection device 10 of one embodiment, the channel width of the transistor constituting the rectifying element of the first protection circuit 302 is longer than the channel width of the transistor constituting the rectifying element of the second protection circuit 502, and therefore, the capacitance included in the first protection circuit 302 is larger than the capacitance included in the second protection circuit 502. Therefore, the ESD intruding from the terminal 202 side is applied slowly, so it can be stored in the large capacitance included in the first protection circuit 302, and then it can be discharged to the high voltage power supply line VH or the low voltage power supply line VL over a period of time. On the other hand, assuming that the ESD that enters the second protection circuit 502 from the sensor unit 600 side is static electricity generated when the detection device 10 is used, it can be considered that the static electricity is applied faster than the static electricity from the first protection circuit 302 side. This static electricity does not need to be stored in the capacitor in the protection circuit for a long time, and can be immediately discharged to the high voltage power supply line VH or the low voltage power supply line VL through the above-mentioned configuration.

[0078] That is, the detection device 10 according to one embodiment includes two protection circuits at different positions, and thus can suppress both ESD intruding from the terminal side and ESD intruding from the sensor unit 600 side.

[0079] <5. Layout of the First Protection Circuit 302 and the Second Protection Circuit 502 >

[0080] Figure 7 This is a schematic diagram showing an example of the layout of the first protection circuit 302 according to one embodiment. Figure 8 This is a schematic diagram showing an example of the layout of the second protection circuit 502 according to one embodiment. Figure 7 and Figure 8 The layout of the first protection circuit 302 and the layout of the second protection circuit 502 shown are examples, and the layout of the first protection circuit 302 and the layout of the second protection circuit 502 are not limited to Figure 7 and Figure 8 The layout shown. Figure 1 to Figure 6 The description of the same or similar structures is omitted here.

[0081] Figure 7 yes Figure 5 The layout of the first protection circuit 302 is shown in FIG. Figure 7As shown, the input terminal 310 is connected to the second electrode 356A of the first transistor 350A, the first electrode 372A of the second transistor 370A and the wiring 316 via a plurality of contact holes 34a and 34b. The wiring 316 is connected to the output terminal 320 via a plurality of contact holes 34c and 34d. The gate electrode 354A of the first transistor 350A is connected to one end of the first resistor 360A (one end of the semiconductor layer 362A) via a plurality of contact holes 32j and 32k. In addition, the first electrode 352A of the first transistor 350A is connected to the other end of the first resistor 360A (the other end of the semiconductor layer 362A) via a plurality of contact holes 32m. In this way, the gate electrode 354A of the first transistor 350A is diode-connected to the first electrode 352A. The first electrode 352A of the first transistor 350A and the other end of the first resistor 360A are connected to the low voltage power supply line VL. The wiring 316 is connected to the semiconductor layer 358A via a contact hole group 32i including a contact hole 32e. The first electrode 352A is connected to the semiconductor layer 358A via a plurality of contact holes 32h, 32f, etc. The second electrode 356A is connected to the semiconductor layer 358A via a plurality of contact holes 32g, etc.

[0082] In addition, the gate electrode 374A of the second transistor 370A is connected to one end of the second resistor 380A (one end of the semiconductor layer 382A) via a plurality of contact holes 32n and 32p. In addition, the first electrode 372A of the second transistor 370A is connected to the other end of the second resistor 380A (the other end of the semiconductor layer 382A) via a plurality of contact holes 32q. In this way, the first electrode 372A of the second transistor 370A is diode-connected. The second electrode 376A of the second transistor 370A is connected to the high voltage power supply line VH via a plurality of contact holes 34e, 34f, etc. The wiring 316 is connected to the semiconductor layer 378A via a plurality of contact holes 32d, etc. The first electrode 372A is connected to the semiconductor layer 378A via a plurality of contact holes 32b, etc. The second electrode 376A is connected to the semiconductor layer 378A via a plurality of contact holes 32a, etc.

[0083] The channel width of the transistors of the first transistor 350A and the second transistor 370A is the channel width WA. The first transistor 350A and the second transistor 370A include 3 transistors respectively, and therefore, the channel widths of the first transistor 350A and the second transistor 370A are 3×WA respectively. The channel widths of the first transistor 350A and the second transistor 370A are arranged to be parallel or substantially parallel to the second direction (D2), and the channel lengths are arranged to be parallel or substantially parallel to the first direction (D1). The direction from the first electrode 352A toward the second electrode 356A of the first transistor 350A and the direction from the first electrode 372A toward the second electrode 376A of the second transistor 370A are both parallel or substantially parallel to the first direction (D1). Thus, in the first transistor 350A and the second transistor 370A, the direction of current flow is parallel or substantially parallel to the first direction.

[0084] The direction from one end to the other end of the first resistor 360A and the direction from one end to the other end of the second resistor 380A are parallel or substantially parallel to the second direction (D2). That is, in the first resistor 360A and the second resistor 380A, the direction in which current flows is parallel or substantially parallel to the second direction.

[0085] According to the above, the configuration of the first transistor 350A and the second transistor 370A is rotated 90 degrees or approximately 90 degrees relative to the configuration of the first resistor 360A and the second resistor 380A. In addition, the direction in which the current flows in the first transistor 350A and the second transistor 370A is perpendicular or approximately perpendicular to the direction in which the current flows in the first resistor 360A and the second resistor 380A.

[0086] Figure 8 yes Figure 5 The layout of the second protection circuit 502 is shown. Figure 8As shown, the input terminal 510 is connected to the second electrode 356B of the first transistor 350B, the first electrode 372B of the second transistor 370B, and the wiring 516 via a plurality of contact holes 34g and 34h. The wiring 516 is connected to the output terminal 520 via a plurality of contact holes 34j and 34k. The gate electrode 354B of the first transistor 350B is connected to one end of the first resistor 360B (one end of the semiconductor layer 362B) via a plurality of contact holes 32r and 32s. In addition, the first electrode 352B of the first transistor 350B is connected to the other end of the first resistor 360B (the other end of the semiconductor layer 362B) via a plurality of contact holes 32t. In this way, the gate electrode 354B of the first transistor 350B is diode-connected to the first electrode 352B. The first electrode 352B of the first transistor 350B and the other end of the first resistor 360B are connected to the low voltage power supply line VL. The wiring 516 and the first electrode 352B are connected to the semiconductor layer 358B via a contact hole group 32w including a contact hole 32v. The second electrode 356B is connected to the semiconductor layer 358B via a plurality of contact holes 32u and the like.

[0087] In addition, the gate electrode 374B of the second transistor 370B is connected to one end of the second resistor 380B (one end of the semiconductor layer 382B) via a plurality of contact holes 32x and 32y. In addition, the first electrode 372B of the second transistor 370B is connected to the other end of the second resistor 380B (the other end of the semiconductor layer 382B) via a plurality of contact holes 32z. In this way, the first electrode 372B of the second transistor 370B is diode-connected. The second electrode 376B of the second transistor 370B is connected to the high voltage power supply line VH. The wiring 516 and the first electrode 372B are connected to the semiconductor layer 378B via a plurality of contact holes 32o. The second electrode 376B is connected to the semiconductor layer 378B via a plurality of contact holes 32o.

[0088] The channel width of the transistors of the first transistor 350B and the second transistor 370B is the channel width WB. The channel widths of the first transistor 350B and the second transistor 370B are arranged to be parallel or substantially parallel to the second direction (D2), and the channel length is arranged to be parallel or substantially parallel to the first direction (D1). The direction from the first electrode 352B toward the second electrode 356B of the first transistor 350B and the direction from the first electrode 372B toward the second electrode 376B of the second transistor 370B are both parallel or substantially parallel to the first direction (D1). Thus, in the first transistor 350B and the second transistor 370B, the direction of current flow is parallel or substantially parallel to the first direction.

[0089] The direction from one end of the first resistor 360B to the other end and the direction from one end of the second resistor 380B to the other end are parallel or substantially parallel to the first direction (D1). That is, in the first resistor 360B and the second resistor 380B, the direction in which the current flows is parallel or substantially parallel to the first direction.

[0090] According to the above content, the configuration of the first transistor 350B and the second transistor 370B, the configuration of the first resistor element 360B and the second resistor element 380B, the direction of current flow in the first transistor 350A and the second transistor 370A, and the direction of current flow in the first resistor element 360A and the second resistor element 380A are parallel or approximately parallel to the first direction (D1).

[0091] In addition, as described above, for a direction parallel or substantially parallel to the first direction (D1), the distance DFpit of the first protection circuits 302 adjacent to each other is longer than the distance DSpit of the second protection circuits 502 adjacent to each other. In addition, in a direction parallel or substantially parallel to the second direction (D2), the length of the first protection circuit 302 is longer than the length of the second protection circuit 502. That is, the first protection circuit 302 can be laid out wider in the first direction than the second protection circuit 502. Thus, the first protection circuit 302 can divide a transistor with a long channel width into a plurality of transistors with the same channel width and be configured to be folded in the first direction. On the other hand, the second protection circuit 502 requires one for each data line 124, and the space for layout in the first direction is narrower than that of the first protection circuit 302. Therefore, the first resistance element 360B and the second resistance element 380B included in the second protection circuit 502 are rotated 90 degrees relative to the first resistance element 360A and the second resistance element 380A included in the first protection circuit 302. The configuration direction of the transistor and the resistor element can be set to be parallel or substantially parallel to the second direction, and the wiring directions of the transistor and the resistor element can be made consistent, so they can be laid out in a narrow space with a narrow wiring width.

[0092] <6. Cross-sectional structure of the first protection circuit 302 and the second protection circuit 502 >

[0093] Fig. 9 and Fig.10 This is a cross-sectional view showing an example of a cross section of the first protection circuit 302 or the second protection circuit 502 according to one embodiment. Fig. 9 and Fig.10 The cross-section of the first protection circuit 302 and the second protection circuit 502 shown is an example, and the cross-section of the first protection circuit 302 and the second protection circuit 502 is not limited to Fig. 9 and Fig.10 The cross section shown. Figures 1 to 8 The description of the same or similar structures is omitted here.

[0094] Fig. 9 1 is a schematic cross-sectional view showing a cross section along lines A1 and A2 of a first protection circuit according to an embodiment. Fig. 9 As shown, in the cross section along A1 and A2 of the first protection circuit, for example, the first insulating layer 31, the second insulating layer 33, the third insulating layer 35, the fourth insulating layer 38 and the fifth insulating layer 39 are stacked in sequence from the side of the first substrate 100 close to the first surface 100a. The first insulating layer 31, the second insulating layer 33, the third insulating layer 35, the fourth insulating layer 38 and the fifth insulating layer 39 are formed using inorganic insulating materials. The inorganic insulating material is, for example, silicon oxide, silicon nitride or silicon oxynitride. The third insulating layer 35 can also be formed using an organic insulating material. The organic insulating material is, for example, polyimide and acrylic. By using an organic insulating material for the third insulating layer 35, the first conductive film forming the gate electrodes 374A and 354A, the semiconductor layers 378A and 358A, the first electrode 372A, the second electrode 376A, the first electrode 352A and the second conductive film forming the second electrode 356A can be buried to flatten the surface. By flattening the surface using the third insulating layer 35, it is possible to ensure that the sensor electrode 121 ( Fig.11 ) of the third conductive film. As a result, the plurality of sensor electrodes 121 can be formed uniformly and flatly within the substrate surface, thereby suppressing the deviation of signal detection. Therefore, the detection device 10 of one embodiment can detect fingerprints more clearly.

[0095] The first insulating layer 31 is a so-called base film. By providing the first insulating layer 31 on the first surface 100a of the first substrate 100, it is possible to suppress impurities and the like from penetrating from the first substrate 100 to the transistor. In addition, the first insulating layer 31 may be removed. The first conductive film forming the gate electrodes 374A and 354A is formed on the first insulating layer 31. The second insulating layer 33 is formed on the first conductive film. The second insulating layer 33 is a so-called gate insulating film. The semiconductor layers 378A and 358A are formed on the second insulating layer 33. The semiconductor layers 378A and 358A are formed of, for example, a semiconductor material such as amorphous silicon, polycrystalline silicon, or metal oxide.

[0096] Next, the third insulating layer 35 is formed on the semiconductor layers 378A and 358A. Contact holes 32a, 32b, 32c, 32d, 32e, 32f, 32g, and 32h are formed in the third insulating layer 35. A second conductive film forming the first electrode 372A, the second electrode 376A, the first electrode 352A, and the second electrode 356A is formed on the third insulating layer 35. The first electrode 372A and the second electrode 376A are connected to the semiconductor layer 378A exposed through the contact holes 32a, 32b, 32c, and 32d. The first electrode 352A and the second electrode 356A are connected to the semiconductor layer 358A exposed through the contact holes 32e, 32f, 32g, and 32h. The semiconductor layer 378A and the semiconductor layer 358A are connected via the first electrode 372A and the second electrode 356A. The first conductive film forming the gate electrodes 374A and 354A and the second conductive film forming the first electrode 372A, the second electrode 376A, the first electrode 352A, and the second electrode 356A are formed using a metal material such as aluminum, molybdenum, titanium, or tungsten.

[0097] Next, the fourth insulating layer 38 is formed over the second conductive film forming the first electrode 372A, the second electrode 376A, the first electrode 352A, and the second electrode 356A. Furthermore, the fifth insulating layer 39 is formed over the fourth insulating layer 38 .

[0098] Fig.10 1 is a schematic cross-sectional view showing a cross section of the second protection circuit of one embodiment along lines B1 and B2. Figures 1 to 9 The description of the same or similar structures is omitted here.

[0099] like Fig.10 As shown, the semiconductor layer 358B is formed on the second insulating layer 33. Next, the third insulating layer 35 is formed on the semiconductor layer 358B. The contact hole group 32w including the contact hole 32v is formed on the third insulating layer 35. The second conductive film forming the first electrode 352B is formed on the third insulating layer 35. The first electrode 352B is connected to the semiconductor layer 358B exposed through the contact hole group 32w. The fourth insulating layer 38 is formed on the second conductive film forming the first electrode 352B. Contact holes 34g, 34h, 34j, and 34k are formed in the fourth insulating layer 38. The third conductive film including the input terminal 510 and the output terminal 520 is connected to the first electrode 352B exposed through the contact holes 34g, 34h, 34j, and 34k. When viewed from the side, the input terminal 510 and the output terminal 520 are set as the same layer on the fourth insulating layer 38. The fifth insulating layer 39 is formed on the third conductive film including the input terminal 510 and the output terminal 520.

[0100] The first transistor 350A, the second transistor 370A, the first transistor 350B, and the second transistor 370B are formed in the manner described above.

[0101] In addition, similarly to the first transistor 350A, the second transistor 370A, the first transistor 350B, and the second transistor 370B, the first resistor 360A, the second resistor 380A, the first resistor 360B, and the second resistor 380B are formed.

[0102] <7. Cross-sectional structure of sensor 120 >

[0103] Fig.11 This is a cross-sectional view showing an example of a cross section of the sensor 120 according to one embodiment. Fig.11 The cross section of the sensor 120 shown is an example, and the cross section of the sensor 120 is not limited to Fig.11 The cross section shown. Figures 1 to 10 The description of the same or similar structures is omitted here.

[0104] like Fig.11 As shown, the first insulating layer 31 is formed on the first surface 100a of the first substrate 100. The first conductive film forming the gate line 122 is formed on the first insulating layer 31. The second insulating layer 33 is formed on the semiconductor layer 128 formed on the first conductive film. The second insulating layer 33 is formed on the semiconductor layer 128. Next, the third insulating layer 35 is formed on the semiconductor layer 128. Contact holes 32x and 32y are formed in the third insulating layer 35. The second conductive film forming the data line 124 and the electrode 126 is formed on the third insulating layer 35. The data line 124 and the electrode 126 are connected to the semiconductor layer 128 exposed through the contact holes 32x and 32y. Next, the fourth insulating layer 38 is formed on the second conductive film forming the data line 124 and the electrode 126. Next, the contact hole 34m is formed in the fourth insulating layer 38. The third conductive film forming the sensor electrode 121B is connected to the electrode 126 exposed through the contact hole 32m. Further, the fifth insulating layer 39 is formed on the sensor electrode 121B. When viewed from the side, the sensor electrode 121B is provided on the same layer as the input terminal 310, the output terminal 320, the input terminal 510, and the output terminal 520 on the fourth insulating layer 38. The third conductive film forming the sensor electrode 121B is formed using a metal material such as aluminum.

[0105] The sensor 120 is formed in the manner described above.

[0106] <8. Cross-sectional structure of sensor 120 >

[0107] Fig.12This is a diagram showing an example of a rectangular wave propagating from the transmitting conductor 110 to the sensor electrode 121 via the finger 74 according to one embodiment. Fig.12 The figure shown schematically shows an example of a propagating rectangular wave in a detection device 10 according to an embodiment. Fig.12 In the figure, various insulating films and various conductive films between the first surface 100a of the first substrate 100 and the sensor electrode 121, the second substrate 103 between the first substrate 100 and the third substrate 104, various wirings, IC107, etc. are omitted. Figures 1 to 11 The description of the same or similar structures is omitted here.

[0108] As described above, in the fingerprint sensor of one embodiment, the transmitting conductor 110 functions as a transmitting electrode (Tx electrode), and the sensor electrode 121 functions as a receiving electrode (Rx electrode).

[0109] For example, Figure 2 As shown, IC107 supplies the drive signal Vsig to the transmission conductor 110 via the wiring 108. The gate driver 102 selects, for example, one gate line 122 from among the plurality of gate lines based on a control signal supplied from IC107 via the wiring 116, the terminal unit 200, and the first protection circuit unit 300. Next, the gate driver 102 applies a predetermined voltage to the selected gate line.

[0110] like Figure 2 and Figure 4 As shown, the sensor electrode 121 of the sensor 120 connected to the selected gate line is connected to the selection circuit 402 via the data line 124 and the transistor. The selection circuit 402 selects a plurality of data lines including the data line 124 from among the plurality of data lines based on a control signal supplied from the IC 107. The selection circuit 402 connects the plurality of data lines including the selected data line 124 to the IC 107 via the second protection circuit 502, the selection circuit 402, the first protection circuit 302, the terminal 202, the wiring 114, the wiring 116, and the like.

[0111] like Fig.12 As shown, when the finger 74 approaches or contacts the detection device 10, the magnetic field between the transmitting conductor 110 and the sensor electrode 121 changes. The sensor electrode 121 detects (inputs) the change of the drive signal Vsig based on the changed magnetic field, and sends (outputs) the detected change of the drive signal Vsig as a detection signal Vdet to the IC 107 via the data line 124. The IC 107 can detect the fingerprint by inputting the detection signal Vdet and analyzing the detection signal Vdet.

[0112] The above-described embodiments or parts of the embodiments may be appropriately combined and implemented as one embodiment of the present disclosure as long as there is no contradiction between them.

[0113] In addition, within the scope of the present invention, those skilled in the art can think of various variations and modifications. In addition, it is understood that various variations and modifications also belong to the scope of the present invention. For example, those skilled in the art appropriately add, delete or design changes the constituent elements, or add, omit or change the conditions of the processes for the above-mentioned embodiments are included in the scope of the present disclosure as long as they have the gist of the present disclosure.

Claims

1. A detection device, comprising: substrate; A terminal portion, disposed on the substrate and having a plurality of terminals; A first protection circuit unit is disposed on the substrate and has a plurality of first protection circuits; A selection circuit unit is disposed on the substrate and has a plurality of selection circuits; A second protection circuit unit is disposed on the substrate and has a plurality of second protection circuits; as well as The sensor unit is disposed on the substrate and has a plurality of sensors. The first protection circuit portion is provided between the terminal portion and the selection circuit portion, The second protection circuit unit is provided between the selection circuit unit and the sensor unit. The plurality of sensors are arranged in a first direction and in a second direction intersecting the first direction, The plurality of first protection circuits and the plurality of second protection circuits are arranged in a direction parallel to the first direction, An interval between the first protection circuits adjacent to each other is greater than an interval between the second protection circuits adjacent to each other.

2. The detection device according to claim 1, wherein: The first protection circuit includes a first rectifying element, a second rectifying element, and a first resistive element.

3. The detection device according to claim 2, wherein: The second protection circuit includes a third rectifying element, a fourth rectifying element, and a second resistive element.

4. The detection device according to claim 3, wherein: The first rectifying element has a first diode-connected transistor, The second rectifying element has a diode-connected second transistor, The third rectifying element has a diode-connected third transistor, The fourth rectifying element has a diode-connected fourth transistor, The channel width of the first transistor is the same as the channel width of the second transistor, The channel width of the third transistor is the same as the channel width of the fourth transistor, A channel width of the first transistor and a channel width of the second transistor are greater than a channel width of the third transistor and a channel width of the fourth transistor.

5. The detection device according to claim 4, wherein: The resistance value of the first resistance element is the same as the resistance value of the second resistance element.

6. The detection device according to claim 1, wherein: The terminal is connected to the first protection circuit, The first protection circuit is connected to two or more selection circuits. The selection circuit is connected to the second protection circuit, The second protection circuit is connected to a plurality of the sensors arranged in a second direction.

7. The detection device according to claim 3, wherein: The first resistor element is arranged substantially parallel to the first direction, The second resistance element is disposed substantially parallel to the second direction.

8. The detection device according to claim 1, wherein: The first protection circuit has an input terminal connected to the terminal and an output terminal electrically connected to the selection circuit. When viewed from the side, the input terminal and the output terminal are arranged on the same layer.

9. The detection device according to claim 1, wherein: The second protection circuit has an input terminal connected to the selection circuit and an output terminal electrically connected to the sensor. The sensor has a sensor electrode for detecting a signal, When viewed from the side, the input terminal, the output terminal, and the sensor electrode are provided on the same layer.

10. The detection device according to claim 1, wherein: The substrate includes an insulating material.

11. The detection device according to claim 1, wherein: The capacitance of the second protection circuit is smaller than the capacitance of the first protection circuit.

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