Display substrate, brightness compensation method thereof, and display device

Abstract

A display substrate includes: a silicon-based substrate having a display area, a peripheral area located around the display area, and a binding area located to one side of the peripheral area; a pad assembly is integrated within the silicon-based substrate in the binding area; the pad assembly includes at least one first binding electrode; at least one light-emitting sensor group is provided on the silicon-based substrate in the peripheral area, the light-emitting sensor group is electrically connected to the first binding electrode; after receiving a test current, the light-emitting sensor group outputs a detection voltage through the first binding electrode.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to, but are not limited to, the field of display technology, and in particular to a display substrate, a brightness compensation method thereof, and a display device. Background Art

[0002] Micro-OLED (Micro Organic Light-Emitting Diode) is a micro display developed in recent years, and silicon-based organic light-emitting diode (OLED) is one of them. Silicon-based OLED has the characteristics of high pixel density (PPI, Pixels Per Inch), small size, and high contrast. It is made using the mature integrated circuit complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor) process, which realizes active addressing of pixels and can prepare various functional circuits including timing control (TCON) circuit, overcurrent protection (OCP, Over Current Protection) circuit on the silicon substrate, which is conducive to reducing the system volume and achieving lightweight. Silicon-based OLED is widely used in the field of virtual reality and augmented reality near-eye display, especially in augmented reality (AR, Augmented Reality) / virtual reality (VR, Virtual Reality) head-mounted display devices. Summary of the Invention

[0003] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0004] In a first aspect, an embodiment of the present disclosure provides a display substrate, comprising: a silicon-based substrate, the silicon-based substrate having a display area, a peripheral area located around the display area, and a binding area located on one side of the peripheral area, wherein a pad assembly is integrated in the silicon-based substrate in the binding area; the pad assembly includes at least one first binding electrode; at least one light-emitting sensor group is provided on the silicon-based substrate in the peripheral area, the light-emitting sensor group is electrically connected to the first binding electrode; after receiving a test current, the light-emitting sensor group outputs a detection voltage through the first binding electrode.

[0005] In a second aspect, an embodiment of the present disclosure provides a brightness compensation method for a display substrate, which is applied to the above-mentioned display substrate. The method includes: providing a test current to at least one light-emitting sensor group, and obtaining a detection voltage through a first binding electrode electrically connected to the light-emitting sensor group; determining an internal resistance test result of the light-emitting sensor group based on the detection voltage and the test current; and performing brightness compensation on the light-emitting elements in the display area based on the internal resistance test result of the light-emitting sensor group.

[0006] In a third aspect, an embodiment of the present disclosure provides a display device comprising the above-mentioned display substrate.

[0007] The display substrate provided by the embodiment of the present disclosure can detect the internal resistance at the location of the light-emitting sensor group, and then obtain the internal resistance of the light-emitting elements in the display area. The display brightness can be adjusted according to the change in the internal resistance of the light-emitting elements, thereby ensuring the uniformity of the brightness of the display substrate.

[0008] Other features and advantages of the present application will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present application. Other advantages of the present application can be realized and obtained through the solutions described in the description and the drawings.

[0009] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The accompanying drawings are used to provide an understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0011] Figure 1 A schematic diagram showing the structure of a substrate in an example;

[0012] Figure 2 is a schematic diagram showing a substrate connected to a flexible circuit board in an example;

[0013] Figure 3 A partial cross-sectional view of a display area in an example;

[0014] Figure 4 is a schematic plan view showing a substrate in an example;

[0015] Figure 5 Schematic diagram of a circuit structure when an internal current source is used for detection in an example;

[0016] Figure 6 Schematic diagram of a circuit structure when an external current source is used for detection in an example;

[0017] Figure 7is a flowchart of a brightness compensation method in an example;

[0018] Figure 8 FIG. 1 is a schematic diagram of brightness compensation in an example. DETAILED DESCRIPTION

[0019] This application describes multiple embodiments, but this description is exemplary rather than restrictive, and it will be apparent to those skilled in the art that there may be more embodiments and implementations within the scope of the embodiments described herein. Although many possible feature combinations are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are also possible. Unless specifically limited, any feature or element of any embodiment may be used in combination with any other feature or element in any other embodiment, or may replace any other feature or element in any other embodiment.

[0020] This application includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features, and elements disclosed in this application may also be combined with any conventional features or elements to form a unique inventive solution defined by the claims. Any features or elements of any embodiment may also be combined with features or elements from other inventive solutions to form another unique inventive solution defined by the claims. Therefore, it should be understood that any feature shown and / or discussed in this application may be implemented individually or in any appropriate combination. Therefore, except for the limitations made according to the appended claims and their equivalents, the embodiments are not subject to other limitations. In addition, various modifications and changes may be made within the scope of protection of the appended claims.

[0021] In addition, when describing representative embodiments, the specification may have presented the method and / or process as a specific sequence of steps. However, to the extent that the method or process does not rely on the specific order of the steps described herein, the method or process should not be limited to the steps in the specific order described. As will be understood by those skilled in the art, other orders of steps are also possible. Therefore, the specific order of the steps set forth in the specification should not be interpreted as a limitation to the claims. In addition, the claims for the method and / or process should not be limited to performing their steps in the order written, and those skilled in the art can readily understand that these orders can be changed and still remain within the spirit and scope of the embodiments of the present application.

[0022] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, or a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate piece, or a connection between the two elements. For those of ordinary skill in the art, the meanings of the above terms in the present disclosure can be understood according to the circumstances. Among them, "electrical connection" includes the situation where constituent elements are connected together through an element with some electrical function. There is no special restriction on "elements with some electrical function" as long as they can transmit electrical signals between connected constituent elements. Examples of "elements with some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other elements with one or more functions.

[0023] In the drawings, the sizes of components, layer thicknesses, or regions may be exaggerated for clarity. Therefore, one embodiment of the present disclosure is not necessarily limited to these dimensions, and the shapes and sizes of components in the drawings do not reflect true proportions. Furthermore, the drawings schematically illustrate idealized examples, and one embodiment of the present disclosure is not limited to the shapes or numerical values shown in the drawings.

[0024] In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of some known functions and components. The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures can refer to the general design.

[0025] OLED display devices are used in near-eye display devices, and the uniformity of the brightness of the display substrate determines the user experience. When silicon-based OLED display devices are used in AR / VR devices, since the OLED device needs to match the optomechanical structure (such as the AR / VR whole machine structure), the defects in the display image will be magnified under the amplification effect of the optomechanical structure, which requires the brightness of the display substrate to have high uniformity. Therefore, during the design and manufacturing process of silicon-based OLED devices, the brightness of the entire display substrate needs to be consistent. In addition, during the use of silicon-based OLED display devices, the internal resistance of the light-emitting element will change, which can easily lead to uneven brightness of the display substrate and gradually decay of its service life.

[0026] The present disclosure provides a display substrate comprising a silicon-based substrate having a display area, a peripheral (dummy) area surrounding the display area, and a bonding area located to one side of the peripheral area. A pad assembly is integrated within the silicon-based substrate in the bonding area, and the pad assembly includes at least one first bonding electrode. At least one luminescent sensor group is disposed on the silicon-based substrate in the peripheral area, and is electrically connected to the first bonding electrode. After receiving a test current, the luminescent sensor group outputs a detection voltage through the first bonding electrode.

[0027] In the embodiment of the present disclosure, the internal resistance at the location of the light emitting sensor group can be obtained based on the test current and the detection voltage. The internal resistance of the peripheral area can be used to represent the internal resistance of the display area, and the change in the internal resistance of the light emitting sensor group in the peripheral area can be used to reflect the change in the internal resistance of the light emitting element in the display area. Moreover, the solution of the embodiment of the present disclosure can detect the internal resistance of the light emitting element, and the light-on voltage of the light emitting element can be obtained based on the internal resistance. The display brightness can be adjusted by adjusting the light-on voltage of the light emitting element, which can ensure the uniformity of the brightness of the display substrate and play a role in life compensation. In addition, setting the light emitting sensor group in the peripheral area will not affect the normal picture display, which is conducive to the uniformity of the preparation process.

[0028] In some exemplary embodiments, the luminescence sensor group includes a plurality of luminescence sensors arranged in an array, and the plurality of luminescence sensors are connected in parallel.

[0029] In some exemplary embodiments, the first electrodes of the plurality of light emitting sensors are electrically connected and electrically connected to the first binding electrode, and the second electrodes of the plurality of light emitting sensors are electrically connected to the first power line. For example, the first electrode may be the anode of the plurality of light emitting sensors, the second electrode may be the cathode of the plurality of light emitting sensors, and the cathode of the light emitting sensor may be electrically connected to the cathode of the light emitting element. That is, the cathode of the light emitting sensor (or the cathode of the light emitting element) serves as a common electrode for the light emitting sensor and the light emitting element, and the first power line may be connected to the common electrode.

[0030] In this exemplary embodiment, when a test current is input to the light emitting sensor group, the detection voltage of the light emitting sensor group, i.e., the anode voltage, can be detected at the first binding electrode of the pad assembly. Since the cathode voltage of the light emitting sensor group is a known common electrode voltage, the cross-voltage between the cathode and anode of the light emitting sensor group can be calculated. The internal resistance of the light emitting sensor group can be obtained by dividing the cross-voltage by the test current.

[0031] In some exemplary embodiments, a plurality of light-emitting elements are provided on the silicon-based substrate of the display area, a plurality of pixel circuits are provided in the silicon-based substrate of the display area, and the plurality of light-emitting elements and the plurality of pixel circuits are electrically connected one-to-one; the structures of the light-emitting elements and the light-emitting sensors are substantially the same.

[0032] The size, spacing, and shape of the luminescence sensors can be identical to those of the luminescence elements. The luminescence sensors in the peripheral area and the luminescence elements in the display area can be manufactured using the same process. This simplifies the manufacturing process and ensures uniformity.

[0033] In some exemplary embodiments, at least one light emitting sensor group may be disposed in a peripheral region on one side of the display region, and the internal resistance of the at least one light emitting sensor group may represent the internal resistance of the light emitting elements of the entire display region.

[0034] In some exemplary embodiments, the binding area is located on one side of the peripheral area in the second direction, and at least two light emitting sensor groups are located on opposite sides of the display area along the first direction, where the first direction intersects the second direction.

[0035] In some exemplary embodiments, the first direction is perpendicular to the second direction.

[0036] In this exemplary embodiment, the display area can be divided into a first portion and a second portion along a first direction. The internal resistance of the light-emitting sensor group near the first portion can be used to represent the internal resistance of the display area in the first portion, while the internal resistance of the light-emitting sensor group near the second portion can be used to represent the internal resistance of the display area in the second portion. Compared to placing light-emitting sensor groups in the peripheral area of one side of the display area, placing light-emitting sensor groups on opposite sides of the display area along the first direction takes into account the differences in film uniformity during OLED manufacturing and accommodates light-emitting elements with different usage ranges. This provides more accurate results when the display area is large.

[0037] In some exemplary embodiments, multiple light emitting sensor groups may be positioned on three sides or all four sides of the display area, respectively, to represent the internal resistance of light emitting elements in different portions of the display area. The positions and number of light emitting sensor groups can be set based on actual needs, and the present disclosure does not limit the layout of the light emitting sensor groups.

[0038] In some exemplary embodiments, the light emitting sensor group includes m light emitting sensors arranged sequentially along the second direction, where m is an integer greater than or equal to 100. During operation of the light emitting sensor group, since the multiple light emitting sensors in the light emitting sensor group are connected in parallel, the multiple light emitting sensors can act as an average current. Providing an appropriate number of light emitting sensors in the light emitting sensor group not only enables more accurate detection of internal resistance but also facilitates long-term stable operation of the light emitting sensor group.

[0039] In some exemplary embodiments, a current source circuit and a control transistor are integrated in the silicon-based substrate of the peripheral region; the current source circuit is electrically connected to the control transistor, and the control transistor is electrically connected to the light-emitting sensor group; the current source circuit is configured to provide a test current to the light-emitting sensor group under the control of the control transistor.

[0040] In some exemplary embodiments, the pad assembly further includes at least one second binding electrode, the second binding electrode being electrically connected to the luminescence sensor group and configured to provide a test current to the luminescence sensor group.

[0041] In some exemplary embodiments, the pad assembly is bound and connected to a flexible printed circuit (FPC), which can electrically connect the display substrate to an external circuit.

[0042] The display substrate of the present disclosure is described below using an example.

[0043] Figure 1 FIG. 1 is a schematic diagram showing the structure of a substrate in an example. Figure 1 As shown, the display substrate includes a silicon-based substrate 11 having a display area 101, a peripheral area 102 surrounding the display area 101, and a bonding area to one side of the peripheral area 102. A pad assembly 103 is integrated within the silicon-based substrate in the bonding area. The pad assembly 103 includes at least one first bonding electrode. Light emitting sensor groups 104 and 106 are arranged along a second direction Y on opposite sides of the display area 101 along a first direction X. Light emitting sensor groups 104 and 106 are arranged in a single row, with the first direction X and the second direction Y being perpendicular to each other. The first electrodes of the multiple light emitting sensors in each light emitting sensor group are electrically connected and to the first bonding electrode. The second electrodes of the multiple light emitting sensors in each light emitting sensor group are electrically connected to a first power line. The second electrodes of the light emitting sensors are configured as common electrodes shared with the light emitting element 105, and the first power line is electrically connected to the common electrode. In this example, each light emitting sensor and the light emitting element 105 of the display area 101 are manufactured using the same process, and the number of light emitting sensors in each column of the light emitting sensor group is the same as the number of light emitting elements 105 in the display area 101 of the adjacent column.

[0044] Figure 1 In the structure shown, the length of the display substrate along the first direction X is greater than the length along the second direction Y. That is, in this example, the pad assembly 103 is set on one side of the long side of the display substrate, and a long-side PIN layout is adopted. The area on one side of the long side is larger, which is convenient for placing circuits and is conducive to the matching design of the optical-mechanical structure.

[0045] Figure 1The detection voltage of the light emitting sensor group 106 is output to pad1 of the first binding electrode, and the detection voltage of the light emitting sensor group 104 is output to pad2 of the first binding electrode. When a test current is input to the light emitting sensor group, the light emitting sensor group will light up. Based on the detection voltages output to pad1 and pad2 respectively, the internal resistance of the light emitting sensor group 106 and the light emitting sensor group 104 in the peripheral area can be calculated respectively. The test current input to the light emitting sensor group 106 can be different from the test current input to the light emitting sensor group 104, that is, different light emitting sensor groups can perform internal resistance detection separately. Figure 1 , the display area 101 is divided into a first portion and a second portion along a center line of the display area 101 in the first direction X. The first portion is close to the light emitting sensor group 106, and the second portion is close to the light emitting sensor group 104. In this example, the internal resistance of the light emitting sensor group 106 is used to represent the internal resistance of the light emitting elements in the first portion of the display area 101, and the internal resistance of the light emitting sensor group 104 is used to represent the internal resistance of the light emitting elements in the second portion of the display area 101.

[0046] Figure 2 This is a schematic diagram of a display substrate connected to a flexible circuit board in an example. The silicon-based substrate 11 is bonded to the flexible circuit board 20 via bonding electrodes on the pad assembly 103. The flexible circuit board 20 electrically connects the display substrate to external circuitry. A light-emitting structure layer is provided on the silicon-based substrate 11. The light-emitting structure layer includes multiple light-emitting elements. These elements emit light when driven by corresponding first and second electrodes. These light-emitting elements may be OLEDs. Cover glass 18 covers the light-emitting structure layer. Light emitted by the multiple light-emitting elements can be transmitted through the cover glass 18 and then emitted. Cover glass 18 protects the light-emitting elements. The dimensions of cover glass 18 are larger than those of the display area 100 but smaller than those of the silicon-based substrate 11. A certain distance is reserved between the four sides of cover glass 18 and the silicon-based substrate 11 to facilitate connection to the optomechanical structure. To ensure light transmission, cover glass 18 can be made of a transparent material, such as plain glass with high transmittance.

[0047] In this example, the size of the silicon-based substrate 11 is 11.1mm*9.5mm, the cover glass 18 is 0.1mm smaller than the silicon substrate 11 on one side, and is 10.9mm*9.3mm. The size of the display area is 0.5mm smaller than the cover glass 18 on one side.

[0048] Figure 3 A partial cross-sectional view of the display area in an example is shown. Figure 3As shown, in a plane perpendicular to the display substrate, the display area 100 includes: a light-emitting structure layer, a first thin-film encapsulation layer 15, a color thin-film layer 16, a second thin-film encapsulation layer 17, and a cover glass 18, which are sequentially arranged on a silicon-based substrate 11. The light-emitting structure layer includes multiple light-emitting elements. At least one light-emitting element includes: a first electrode 12, an organic light-emitting layer 13, and a second electrode 14, which are sequentially arranged on the silicon-based substrate.

[0049] The first electrode 12 of the light-emitting element can be made of indium tin oxide (ITO), which has the characteristics of high transmittance and high work function. The organic light-emitting layer 13 can be made of organic materials. Under the action of the voltage or current applied by the first electrode 12 of the light-emitting element and the second electrode 14 of the light-emitting element, holes and electrons are excited in the organic material to form excitons, and the electrons and holes recombine to achieve light emission. The second electrode 14 of the light-emitting element can be made of metal materials or alloy materials, such as metals or alloys such as magnesium and silver. A first thin film encapsulation layer 15 is provided on the upper side of the second electrode 14 of the light-emitting element. The color film layer 16 is provided corresponding to the organic light-emitting layer 13 and can include RGB color films to achieve color display of the emitted light. A second thin film encapsulation layer 17 and a cover glass 18 are sequentially provided on the upper side of the color film layer 16 to protect the color film layer 16. The second thin film encapsulation layer 17 can be made of a material with good sealing properties, such as an organic material, or a combination of one or more inorganic materials such as silicon oxide and silicon nitride. The second thin film encapsulation layer 17 cooperates with the first thin film encapsulation layer 15 to effectively block water vapor and oxygen, thereby helping to extend the service life of the display substrate.

[0050] Figure 4 FIG. 1 is a schematic plan view showing a substrate in an example. Figure 4 As shown, the orthographic projection of the organic light-emitting layer 13 on the display substrate 11 overlaps the orthographic projection of the first electrode 12 of the light-emitting element on the display substrate 11. The orthographic projection of the color film layer 16 on the display substrate 11 overlaps the orthographic projection of the organic light-emitting layer 13 on the display substrate 11. The orthographic projection of the cover glass 18 on the display substrate 11 overlaps the orthographic projection of the color film layer 16 on the display substrate 11. The relationship between the orthographic projections also shows that a certain distance is reserved between the four sides of the cover glass 18 and the silicon-based substrate 11 to facilitate connection to the optical-mechanical structure.

[0051] Figure 5 Schematic diagram of the circuit structure when an internal current source is used for detection in an example. Figure 5 The above description is based on the light emitting sensor group 106 as an example. Figure 5As shown, the luminescence sensor group 106 includes multiple parallel luminescence sensors 1061. The first electrodes (e.g., anodes) of the multiple parallel luminescence sensors 1061 are electrically connected and electrically connected to the first binding electrode, and the second electrodes are electrically connected to the first power line. The voltage of the second electrodes is the voltage of the common electrode VCOM. A current source circuit LDO and a control transistor M1 are integrated within the silicon substrate 11. The current source circuit LDO is electrically connected to the first electrode of the control transistor M1, the second electrode of the control transistor M1 is electrically connected to the luminescence sensor group, and the gate of the control transistor M1 is connected to a reference voltage circuit R. The current source circuit LDO is configured to provide a test current to the luminescence sensor group under the control of the control transistor M1. The reference voltage circuit R is configured to output a suitable reference voltage (Reference) to the control transistor M1 to turn on the control transistor M1. The reference voltage circuit R can be electrically connected to the flexible printed circuit board. When testing the luminescence sensor group 106, the reference voltage circuit R outputs a suitable reference voltage to the control transistor M1, turning it on. The current source circuit LDO then outputs a test current to the luminescence sensor group 106, illuminating the luminescence sensor group 106. Under the influence of the test current, the first electrode voltage is output to pad1. Since the second electrode voltage of the luminescence sensor group 106 is a known common electrode voltage, the voltage across the first and second electrodes (i.e., the cathode and anode) of the luminescence sensor group 106 can be determined based on the detected first electrode voltage and the known second electrode voltage. This voltage divided by the test current yields the internal resistance of the luminescence sensor group 106, and thus the internal resistance of the light-emitting elements located in the first portion of the display area 101. Using the same circuit structure and operating steps, the internal resistance of the luminescence sensor group 104 can also be determined, and thus the internal resistance of the light-emitting elements located in the second portion of the display area 101. During testing, the test currents input to the luminescence sensor groups 106 and 104 can be different.

[0052] During the preparation of the display substrate, each chip may, for example, include a display substrate, and each wafer may, for example, include multiple chips. When the above-mentioned detection process occurs during the preparation of the display substrate, the two internal resistances of the first and second parts of the display area obtained are the initial internal resistances. The initial internal resistances of the first and second parts of the display area can be compared, and based on the comparison results, the internal resistance differences within the entire chip can be evaluated. Using this method, the internal resistance differences of chips at different positions on the entire wafer can also be compared, so that when debugging the electrical parameters of each chip, targeted adjustments can be made to ensure the display uniformity of the display substrate and improve product yield.

[0053] The test performed using the internal current source described above can be referred to as the first detection mode. In the first detection mode, the test current is determined based on the current ratio between the area where the luminescence sensor group is located and the display area. This current ratio can be determined based on parameters such as the number and connection relationship of the luminescence sensors included in the luminescence sensor group, and the number and arrangement of the light-emitting elements in the display area. For example, the voltage-current relationship of the luminescence sensor group at different brightness levels can be calculated. Combined with the voltage-current relationship of the designed display area at different brightness levels, the relationship between the brightness of the luminescence sensor group and the brightness of the display area can be determined when the input current is the same. Furthermore, the current magnitudes of the luminescence sensor group and the display area can be determined when the brightness of the display area and the luminescence sensor group are the same, thereby determining the current ratio. This current ratio can be determined after the design of the display substrate is completed. In this example, light sensor groups 104 and 106 are arranged in a single row along the second direction in peripheral regions 102 on opposite sides of display region 101 along the first direction. Each row of light sensor groups includes 1200 light sensors. Display region 101 contains 1200 rows by 1600 columns of light-emitting elements. Therefore, when a 10mA test current is input, the current in the light sensor groups corresponds to a grayscale of 64, while the current in the corresponding display region corresponds to a grayscale of 255. Once this current ratio is determined, the test current can be adjusted accordingly during testing, enabling more comprehensive testing of the display region.

[0054] Figure 6 Schematic diagram of the circuit structure when an external current source is used for detection in an example. Figure 6 The above description is based on the light emitting sensor group 106 as an example. Figure 6As shown, the luminescence sensor group 106 includes multiple luminescence sensors 1062 connected in parallel. The first electrodes (e.g., anodes) of the multiple luminescence sensors 1062 are electrically connected, and the second electrodes are electrically connected to the first power line. That is, the voltage of the second electrodes is the voltage of the common electrode VCOM. The pad assembly 103 includes at least one second binding electrode, which is electrically connected to the first electrode of the luminescence sensor group and configured to provide a test current to the luminescence sensor group. Iout represents an external power line, which is configured to input a test current to the second binding electrode of the pad assembly 103 to test the luminescence sensor group. When the luminescence sensor group 106 needs to be tested, the test current is input to the second binding electrode via the external power line Iout, causing the luminescence sensor group 106 to illuminate and output the first electrode voltage to pad1 under the action of the test current. Because the second electrode voltage of light sensor group 106 is a known common electrode voltage, the voltage across the first and second electrodes (i.e., the cathode and anode) of light sensor group 106 can be determined based on the detected first electrode voltage and the known second electrode voltage. Dividing this voltage by the test current yields the internal resistance of light sensor group 106, and thus the internal resistance of the light-emitting elements located in the first portion of display area 101. Using the same circuit structure and operating steps, the internal resistance of light sensor group 104 can also be determined, and thus the internal resistance of the light-emitting elements located in the second portion of display area 101. During the internal resistance test, the test currents input to light sensor group 106 and light sensor group 104 can be different.

[0055] The above-mentioned test performed by external current can be referred to as the second detection mode. The method for determining the test current and the current ratio relationship in the second detection mode is the same as that in the first detection mode and will not be repeated here. The second detection mode can also be applied to the scenario of detecting the initial internal resistance mentioned above.

[0056] Figure 7 FIG. 1 is a flow chart of a brightness compensation method in an example. Figure 7 As shown, the brightness compensation method in this example includes the following steps:

[0057] S100: providing a test current to at least one luminescence sensor group, and obtaining a detection voltage through a first binding electrode electrically connected to the luminescence sensor group;

[0058] S200: Determine an internal resistance test result of the light emitting sensor group according to the detection voltage and the test current;

[0059] S300: performing brightness compensation on the light-emitting elements in the display area according to the internal resistance test results of the light-emitting sensor group.

[0060] The test data from the luminescence sensor group represents the corresponding data for the light-emitting elements in the display area. After multiple internal resistance tests, data such as the anode voltage, internal resistance, and brightness of the light-emitting elements in the first and second sections of the display area at different times can be obtained. Further analysis can also reveal data such as the relationship between brightness and current at different internal resistances. This data can be used to develop a brightness compensation solution. For example, the change in internal resistance over time can be used to determine the change in the start-up voltage. Based on the internal resistance measured, electrical parameters such as voltage and current in the display area can be adjusted accordingly to achieve brightness compensation for the light-emitting elements.

[0061] The following uses the second detection mode to perform internal resistance detection as an example to illustrate the process of brightness compensation in this example. In the following description, the specific detection process is not repeated. Figure 8 FIG. 1 is a schematic diagram of brightness compensation in an example. Figure 8 As shown, after the display substrate is prepared, the initial anode voltage V1 and initial internal resistance R1 of the light-emitting sensor group are measured and recorded. When the test current is I1, the brightness of the light-emitting sensor group is D1, and the initial turn-on voltage is calculated to be X1. After a period of use, the anode voltage V2 and internal resistance R2 of the light-emitting sensor group are measured and recorded. When the test current is I1, the brightness of the light-emitting sensor group is D2, and the turn-on voltage is calculated to be X2. After another period of use, the anode voltage V3 and internal resistance R3 of the light-emitting sensor group are measured and recorded. When the test current is I1, the brightness of the light-emitting sensor group is D3, and the turn-on voltage is calculated to be X3, and so on. The internal resistance test can be performed using the second detection mode at fixed intervals, and this fixed interval can be set as needed. To ensure that the analysis is performed under the same conditions, the test current input can be set to the same for each test, for example, I1. After long-term operation, the internal resistance of the light-emitting element increases, and the corresponding turn-on voltage increases. Brightness compensation can be performed after each internal resistance test, or after multiple internal resistance tests. The frequency of brightness compensation can be selected as needed. Taking the example of performing brightness compensation after the second internal resistance test, initially, when the test current I1 is input, the brightness of the light sensor group is D1. However, during the second internal resistance test, the internal resistance of the light-emitting element changes to R2, so that when the same test current I1 is input, the corresponding brightness changes to D2. At this time, brightness compensation is required to ensure that the brightness of the light sensor group remains at D1 when the same test current I1 is input. In this case, the voltage difference between the first electrode and the second electrode of the light sensor group can be adjusted according to the lighting voltage X2, so that the quotient of this voltage difference and the internal resistance X2 is I1. This ensures that the brightness of the light sensor group remains at D1 during normal operation.

[0062] When performing brightness compensation, brightness compensation can be performed with all the light-emitting elements in the entire display area as the minimum compensation unit to achieve uniform brightness of the entire display area. The brightness compensation method can be to modify the voltage value of the common electrode (VCOM). The internal resistance of the light-emitting element increases after long-term use. When the current flowing through the light-emitting element is the same, the voltage of the light-emitting element will increase. Therefore, increasing the common electrode voltage is beneficial to increase the cross-voltage between the cathode and anode of the light-emitting element, thereby ensuring the uniformity of the brightness of the display substrate and extending the service life of the display panel. Alternatively, the brightness compensation method can be to adjust the data voltage input to the light-emitting element. By increasing the data voltage, the cross-voltage between the cathode and anode of the light-emitting element can be increased, which can ensure the uniformity of the brightness of the display substrate and extend the service life of the display substrate. Other brightness compensation methods can also be used, and this example does not limit this.

[0063] When performing brightness compensation, brightness compensation can be performed with a single light-emitting element as the minimum compensation unit. For example, based on the relationship between the internal resistance changes of the light-emitting elements in the first part and the second part of the display area over time and the arrangement of the light-emitting elements in the first part and the second part, an internal resistance change model of each light-emitting element in the entire display area is established. The average internal resistance change of a single light-emitting element can be calculated using this model, and the brightness can be improved by adjusting the data voltage input to the anode of a single light-emitting element.

[0064] When performing brightness compensation, brightness compensation can be performed using multiple light-emitting elements (e.g., the light-emitting elements in the first portion and the light-emitting elements in the second portion of the display area) as the minimum compensation unit. For example, adjustment can be performed using the multiple light-emitting elements included in the minimum compensation unit as a unit to adjust the data voltage input to the multiple light-emitting elements. The minimum unit of brightness compensation and the compensation method can be designed according to actual needs and are not limited in this example.

[0065] In this example, the brightness compensation can be performed using the first detection mode, and the detection process will not be described in detail.

[0066] In this example, a light-emitting sensor group is set on a silicon-based OLED display substrate. The light-emitting sensor group is set in the peripheral area, which will not affect the function of the display screen and can also ensure the uniformity of the manufacturing process. A light-emitting sensor group is set on each of the opposite sides of the peripheral area, which can realize the detection of the internal resistance of the light-emitting elements in the first part and the second part of the display area. When performing the test, the test can be carried out using the first detection mode of the internal current source or the second detection mode of the external input current. The detection mode can be selected as needed. The internal resistance test can obtain the light-emitting element's lighting voltage. By modifying the voltage value of the common electrode or adjusting the data voltage input to the light-emitting element to adjust the lighting voltage, the uniformity of the brightness of the display area can be improved. During the preparation process of the display substrate, the internal resistance distribution on the entire chip and the entire wafer can be understood, which helps to adjust the production parameters and improve the product yield.

[0067] The silicon-based OLED display substrate in this example measures the internal resistance of the light-emitting elements, identifying changes in the internal resistance between the initial state and after extended use. This information is used to calculate the difference in the light-emitting element's starting voltage and compensate for the lifespan of the light-emitting elements, ultimately improving the lifespan of the display substrate. This improved lifespan of the display substrate also extends the service life of the connected flexible circuit board.

[0068] An embodiment of the present disclosure also provides a brightness compensation method for a display substrate, which is applied to the display substrate in the above embodiment. The method includes: providing a test current to at least one light-emitting sensor group and obtaining a detection voltage through a first binding electrode electrically connected to the light-emitting sensor group; determining an internal resistance test result of the light-emitting sensor group based on the detection voltage and the test current; and performing brightness compensation on the light-emitting elements in the display area based on the internal resistance test result of the light-emitting sensor group.

[0069] The brightness compensation method for the display substrate provided in the embodiment of the present disclosure can calculate the internal resistance of the light-emitting element in the display area. After calculating the internal resistance, the lighting voltage of the light-emitting element can be obtained, and then the brightness of the display substrate can be compensated, which helps to extend the service life of the display substrate.

[0070] In some exemplary embodiments, providing the test current to the at least one light emitting sensor group includes: providing the test current to the at least one light emitting sensor group through a current source provided on a silicon-based substrate of the display substrate.

[0071] In some exemplary embodiments, providing the test current to the at least one light emitting sensor group includes: providing the test current to the at least one light emitting sensor group through a second bonding electrode of a pad assembly provided on a silicon-based substrate of the display substrate.

[0072] In some exemplary embodiments, determining the internal resistance test result of the light emitting sensor group based on the detection voltage and the test current includes: calculating a voltage difference between the detection voltage and the voltage of the first power line, and determining the internal resistance test result of the light emitting sensor group based on the voltage difference and the test current.

[0073] In some exemplary embodiments, compensating the brightness of the light-emitting elements in the display area includes modifying the voltage value of the common electrode of the light-emitting elements, or adjusting the data voltage input to the light-emitting elements.

[0074] In some exemplary embodiments, performing brightness compensation on the light-emitting elements in the display area includes performing brightness compensation using a single or multiple light-emitting elements in the display area as a minimum compensation unit.

[0075] The present disclosure also provides a display device comprising the display substrate of any of the above embodiments. In some exemplary embodiments, the display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigation system. However, the present disclosure is not limited to this.

[0076] In the description of the embodiments of the present disclosure, the terms "middle", "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on the present disclosure.

[0077] Although the embodiments disclosed in this disclosure are as described above, the contents described are merely embodiments adopted to facilitate understanding of the disclosure and are not intended to limit the disclosure. Any person skilled in the art to which the disclosure belongs may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope of the disclosure. However, the scope of patent protection of the disclosure shall still be based on the scope defined by the attached claims.

Claims

1. A display substrate, characterized in that: include: A silicon-based substrate, the silicon-based substrate comprising a display area, a peripheral area located around the display area, and a binding area located on one side of the peripheral area, wherein a plurality of light-emitting elements are provided on the silicon-based substrate in the display area, and a pad assembly is integrated in the silicon-based substrate in the binding area; the pad assembly includes at least one first binding electrode; At least two light emitting sensor groups are provided on the silicon-based substrate in the peripheral region, and the at least two light emitting sensor groups are located on at least two sides of the display region; the light emitting sensor groups are electrically connected to the first binding electrode; A current source circuit and a control transistor are integrated in the silicon substrate of the peripheral region; the current source circuit is electrically connected to the control transistor, and the control transistor is electrically connected to the light emitting sensor group; the current source circuit is configured to provide a test current to the light emitting sensor group under the control of the control transistor; the test current is determined based on a current ratio between the light emitting sensor group and the display area at the same brightness; After receiving the test current, the light emitting sensor group outputs a detection voltage through the first binding electrode; the test current and the detection voltage are configured to calculate the internal resistance of the light emitting sensor group; The internal resistance of the light emitting sensor group is set to represent the internal resistance of the plurality of light emitting elements in the portion of the display area adjacent to the sensor group, so as to perform brightness compensation on the plurality of light emitting elements in different portions of the display area respectively.

2. The display substrate according to claim 1, wherein: The light emitting sensor group includes a plurality of light emitting sensors arranged in an array, and the plurality of light emitting sensors are connected in parallel.

3. The display substrate according to claim 2, wherein: The first electrodes of the plurality of light emitting sensors in one light emitting sensor group are electrically connected to each other and to the first binding electrode, and the second electrodes of the plurality of light emitting sensors are electrically connected to the first power line.

4. The display substrate according to claim 2, wherein: A plurality of pixel circuits are provided in the silicon-based substrate of the display area, and the plurality of light-emitting elements and the plurality of pixel circuits are electrically connected in a one-to-one correspondence; the light-emitting elements and the light-emitting sensors have the same structure.

5. The display substrate according to claim 1, wherein The binding area is located on one side of the peripheral area in a second direction, and at least two light emitting sensor groups are located on opposite sides of the display area along a first direction, where the first direction intersects the second direction.

6. The display substrate according to claim 5, wherein: The light emitting sensor group includes m light emitting sensors sequentially arranged along the second direction, where m is an integer greater than or equal to 100.

7. The display substrate according to claim 1, wherein: The pad assembly further includes at least one second binding electrode, which is electrically connected to the light emitting sensor group and configured to provide the test current to the light emitting sensor group.

8. A brightness compensation method for a display substrate, characterized in that: Applied to the display substrate according to any one of claims 1 to 7, the method comprising: providing a test current to at least two luminescence sensor groups, and obtaining a detection voltage through a first binding electrode electrically connected to the luminescence sensor groups; Determining an internal resistance test result of the light emitting sensor group according to the detection voltage and the test current; performing brightness compensation on the light emitting elements located in different parts of the display area according to the internal resistance test results of the light emitting sensor group; The step of providing a test current to at least two light emitting sensor groups includes: The current source circuit provides the test current to the at least two light emitting sensor groups through the control of the control transistor.

9. The brightness compensation method according to claim 8, wherein: The providing a test current to at least one luminescence sensor group further includes: A test current is provided to the at least one light emitting sensor group through a second bonding electrode of a pad assembly provided on the silicon-based substrate of the display substrate.

10. The brightness compensation method according to claim 8, wherein: Determining the internal resistance test result of the light emitting sensor group according to the detection voltage and the test current includes: A voltage difference between the detection voltage and the voltage of the first power line is calculated, and an internal resistance test result of the light emitting sensor group is determined according to the voltage difference and the test current.

11. The brightness compensation method according to claim 8, wherein: Performing brightness compensation on the light-emitting elements in the display area, comprising: The voltage value of the common electrode of the light emitting element is modified, or the data voltage input to the light emitting element is adjusted.

12. The brightness compensation method according to claim 11, wherein: Performing brightness compensation on the light-emitting elements in the display area, comprising: Brightness compensation is performed using a single or multiple light-emitting elements in the display area as the minimum compensation unit.

13. A display device, characterized in that: The display substrate comprises the display substrate according to any one of claims 1 to 7.

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