coating equipment

Abstract

An embodiment of the present invention provides a film coating apparatus comprising: a plasma assembly including: a first electrode assembly; a second electrode assembly, the gap between the second electrode assembly and the first electrode assembly forming a deposition space in which a material is located; and a hot wire assembly for utilizing a temperature field to decompose reactants. In the technical solution of the present invention, plasma-enhanced chemical vapor deposition and hot wire chemical vapor deposition processes are simultaneously employed to coat silicon wafers. The hot wire assembly can mitigate the side effects of ion bombardment, reducing the likelihood of film defects due to ion bombardment. Furthermore, the ion-free nature of the hot wire assembly is beneficial for improving the quality of the deposited film. Combined with the plasma-enhanced effects of the first and second electrode assemblies, the film deposition area is uniform, reducing the likelihood of the hot wire itself being coated. This facilitates the large-scale production of solar cells, achieving high-speed deposition of microcrystalline silicon and nanosilicon, and improving product quality.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of heterojunction solar cell production, and in particular to a coating device. Background Art

[0002] In the plasma enhanced chemical vapor deposition process of the related technology, since it is necessary to emit intermediate frequency or radio frequency (RF), ions will bombard the deposited film during the coating process. Although the ion bombardment ability gradually decreases with the increase of plasma RF frequency, it still exists, and the side effect of increasing the plasma RF frequency is the reduction of the effective uniform area.

[0003] In addition, although the hot wire chemical vapor deposition process of the related technology does not have the side effects of ion bombardment, its film formation uniformity is limited by the characteristics of the hot wire itself. The hot wire itself will also be coated, which will affect the stability of the coating, making it difficult to achieve uniformity over a large area and large-scale production. Summary of the Invention

[0004] In order to solve at least one of the above technical problems, an object of an embodiment of the present invention is to provide a coating device.

[0005] To achieve the above-mentioned objectives, an embodiment of the present invention provides a coating device, comprising: a plasma component, comprising: a first electrode component; a second electrode component, having a polarity opposite to that of the first electrode component, and a deposition space formed by the gap between the second electrode component and the first electrode component; a hot wire component, disposed between the first electrode component and the second electrode component, or the hot wire component is wound around the periphery of the first electrode component and the second electrode component, the hot wire component is used to utilize a temperature field to decompose the reactants, the material is located in the deposition space, the material is parallel to the first electrode component, and the material is parallel to the second electrode component.

[0006] According to an embodiment of the coating equipment provided by the present invention, plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition processes are simultaneously used to coat silicon wafers. The hot-wire assembly can reduce the side effects of ion bombardment and reduce the possibility of defects in the film layer due to ion bombardment. The ion-free bombardment effect of the hot-wire assembly is beneficial to improving the quality of the deposited film. Combined with the plasma-enhanced effect of the first electrode assembly and the second electrode assembly, the deposition area of ​​the film is uniform, which reduces the possibility of coating the hot wire itself, is beneficial to the large-scale production of solar cells, achieves the purpose of high-speed deposition of microcrystalline silicon and nano-silicon, and improves product quality.

[0007] Specifically, the coating equipment includes a first electrode assembly, a second electrode assembly, and a hot wire assembly. There is a gap between the first and second electrode assemblies, and the first and second electrode assemblies have opposite polarities. It is worth noting that the first electrode assembly is the positive electrode and the second electrode assembly is the negative electrode; alternatively, the first electrode assembly is the negative electrode and the second electrode assembly is the positive electrode.

[0008] Furthermore, the gap between the first electrode assembly and the second electrode assembly forms a deposition space, and the material is located in the deposition space, the material is parallel to the first electrode assembly, and the material is parallel to the second electrode assembly. Specifically, the material can move in the deposition space through a carrier, or move in the deposition space together with the plasma assembly. After the plasma assembly is energized, radio frequency, intermediate frequency or high frequency is generated between the two electrode assemblies. The most commonly used is intermediate frequency, which is between 40kHz and 400kHz. In addition, the more commonly used radio frequency has a frequency of 13.56MHz to 60MHz. It should be noted that kHz is kilohertz and MHz is megahertz.

[0009] Furthermore, the hot wire assembly is disposed between the first electrode assembly and the second electrode assembly, or the hot wire assembly is wound around the periphery of the first electrode assembly and the second electrode assembly. In other words, the hot wire assembly is disposed within the deposition space, or the hot wire assembly is disposed outside the deposition space. The hot wire assembly is used to decompose the reactants using a temperature field, that is, to decompose the process gas into a plasma state using its own exothermic properties. Taking into account the type of coating equipment, the size of the space occupied, the cost, and other factors, the hot wire assembly is flexibly configured according to actual needs.

[0010] The material used in this invention is a silicon heterojunction solar cell, although other materials are also possible. Silicon heterojunction solar cells are a type of cell that forms a heterojunction by depositing an amorphous silicon-based thin film on a crystalline silicon surface. Compared to traditional crystalline silicon cells, they offer advantages such as simpler processing, higher power generation, and lower cost per kilowatt-hour. Silicon heterojunction solar cells have become a hot topic in the photovoltaic industry.

[0011] Silicon heterojunction solar cells are typically fabricated using chemical vapor deposition (CVD), which comes in two forms: plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD). In the plasma-enhanced chemical vapor deposition process, ions bombard the deposited film during the coating process due to the need to emit intermediate frequency or radio frequency (RF). Although the ion bombardment capability gradually decreases with increasing plasma RF frequency, it still exists. Furthermore, a side effect of increasing the plasma RF frequency is a reduction in the effective uniform film area.

[0012] In addition, although the hot wire chemical vapor deposition process of the related technology does not have the side effects of ion bombardment, its film formation uniformity is limited by the characteristics of the hot wire itself. The hot wire itself will also be coated, which will affect the stability of the coating, making it difficult to achieve uniformity over a large area and large-scale production.

[0013] In other words, using plasma-enhanced chemical vapor deposition or hot-wire chemical vapor deposition processes alone will have at least the following problems: ion bombardment causes defects in the film layer, uneven area makes mass production difficult, and hot-wire coating causes poor coating stability.

[0014] In the technical solution defined in the present invention, plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition processes are simultaneously used to coat silicon wafers. The hot-wire assembly can reduce the side effects of ion bombardment and reduce the possibility of defects in the film layer due to ion bombardment. The ion-free bombardment effect of the hot-wire assembly is beneficial to improving the quality of the deposited film. Combined with the plasma-enhanced effect of the first electrode assembly and the second electrode assembly, the deposition area of ​​the film is uniform, which reduces the possibility of coating the hot wire itself, is beneficial to the large-scale production of solar cells, achieves the purpose of high-speed deposition of microcrystalline silicon and nano-silicon, and improves product quality.

[0015] This invention provides a plasma-integrated hot-wire coating method, combining plasma and hot-wire technologies to achieve uniform, efficient, and damage-free coating over large areas. This method can be implemented by adding an HWCVD structure to a PECVD structure, or by adding a PECVD structure to an HWCVD structure. The hot-wire assembly extends from a vacuum chamber and applies voltage to achieve vacuum heating, while the plasma assembly ionizes the process gas using microwaves or radio frequency, generating a localized plasma.

[0016] The following method steps are one of the methods for adding a HWCVD structure to a PECVD structure:

[0017] Step 1: Design HWCVD structures suitable for plate and cylinder structures according to the type of PECVD structure. PECVD structures are divided into plate and cylinder types. The HWCVD structure can be flexibly set according to actual needs.

[0018] Step 2: Install the HWCVD structure into the PECVD structure;

[0019] Step 3: During the process, either radio frequency (RF) or hot wire can be used alone, or both RF and hot wire functions can work simultaneously.

[0020] The presence of the hot wire reduces the side effects of ion bombardment in PECVD, and uses the plasma electric field of PECVD to reduce the side effects of CAT or hot wire reaction gas deposition on the hot wire. The hot wire's plasma-free bombardment effect is used to improve the quality of the deposited film. The high-speed deposition of the hot wire is combined with the RF plasma enhancement effect to improve the quality of the film deposition and form a good microstructure. The microstructure includes amorphous silicon, microcrystalline silicon (1e -6 m) and nano-silicon (1e -9 m).

[0021] In addition, the above technical solution provided by the present invention may also have the following additional technical features:

[0022] In the above technical solution, the coating equipment is a plate-type structure, and the hot wire assembly includes: a mounting frame, which is arranged in the deposition space; and a heating wire, which is passed through the mounting frame.

[0023] In this technical solution, by setting the coating equipment as a plate structure, it can be understood that the first electrode assembly and the second electrode assembly are plate-type PECVD structures, and according to the type of PECVD structure, a HWCVD structure suitable for the plate structure is designed. Furthermore, the hot wire assembly includes a mounting frame and a heating wire. Specifically, the mounting frame serves as a mounting carrier, and the heating wire is passed through the mounting frame. Under the action of the carrier, the material can move between the heating wire and one of the electrode assemblies to complete the coating process. Furthermore, the hot wire assembly also includes a receiving column. One end of the receiving column is connected to the first electrode assembly, and the other end of the receiving column is connected to the second electrode assembly. The mounting frame is arranged in the deposition space, and a limiting protrusion is provided on the receiving column, and the mounting frame is connected to the limiting protrusion.

[0024] It's worth noting that the hot wire and radio frequency control systems do not interfere with each other. Depending on the actual process requirements, either one or both can be used. There are four connecting posts, located at the four corners of the electrode assembly to improve the connection strength between the two electrode assemblies.

[0025] In the above technical solution, there are multiple heating wires, and the multiple heating wires are arranged in parallel.

[0026] In this technical solution, by setting the number of heating wires to multiple and arranging the multiple heating wires in parallel, it is beneficial to enhance the heating function of the hot wire assembly to improve the quality of the product after process treatment.

[0027] It is worth noting that multiple heating wires are arranged in parallel, and there may be no connection between two adjacent heating wires, that is, each heating wire is electrically connected to the power supply component separately. When one of the heating wires fails, the other heating wires will continue to work; or, the two adjacent heating wires are connected end to end to facilitate wiring by the staff, and the staff only needs to connect the entire group once.

[0028] In the above technical solution, multiple heating wires are connected end to end.

[0029] In this technical solution, by connecting multiple heating wires end to end, it is convenient for workers to carry out wiring. Workers only need to connect the entire group of wires once, which is conducive to improving work efficiency.

[0030] In the above technical solution, the coating equipment is a cylindrical structure, and the coating equipment also includes: a cylinder, the first electrode assembly and the second electrode assembly are both arranged inside the cylinder, and the material can move along the length direction of the cylinder.

[0031] In this technical solution, the coating equipment is configured as a cylindrical structure, which can be understood as the first and second electrode assemblies forming a cylindrical PECVD structure. Depending on the type of PECVD structure, an HWCVD structure suitable for the cylindrical structure can be designed. Furthermore, the coating equipment also includes a cylindrical body. Specifically, both the first and second electrode assemblies are disposed within the cylindrical body. Under the action of a carrier or plasma assembly, the material can be moved along the length of the cylindrical body to complete the coating process.

[0032] In the above technical solution, the hot wire assembly includes: a heating wire, which is arranged inside the cylinder, the heating wire is arranged circumferentially along the inner wall of the cylinder, and the arrangement direction of the heating wire is consistent with the length direction of the cylinder.

[0033] In this technical solution, the hot wire assembly includes a heating wire. Specifically, the heating wire is arranged inside the barrel, circumferentially along the inner wall of the installation cavity, and the arrangement direction of the heating wire is consistent with the longitudinal direction of the barrel, which is conducive to enhancing the heating function of the hot wire assembly and improving the quality of the processed product.

[0034] It is worth noting that the number of heating wires can be one, two, or more. When there is only one heating wire, the heating wire is arranged in a spiral. When there are two or more heating wires, the heating wires are spiral or ring-shaped, with two adjacent heating wires arranged in parallel, or the heating wire with a larger radial dimension is placed outside the heating wire with a smaller radial dimension. Considering the space occupied, heating effect, cost, and other factors, the heating wire can be flexibly arranged according to actual needs.

[0035] In the above technical solution, the hot wire assembly includes: a heating wire, which is arranged inside the cylinder in the axial direction of the cylinder.

[0036] In this technical solution, the hot wire assembly includes a heating wire. Specifically, the heating wire extends spirally along the interior of the barrel, with the axial direction of the heating wire aligned with the length of the barrel. This can be understood as aligning the axial direction of the heating wire with the length of the barrel. Specifically, the axis of the heating wire is parallel to or coincides with the axis of the barrel. Arranging the heating wire according to the structure of the coating equipment can enhance the heating function of the hot wire assembly and improve the quality of the processed product.

[0037] In the above technical solution, the first electrode assembly includes: a first connecting part; a plurality of first electrode plates, which are arranged at the first connecting part, and the spacing between two adjacent first electrode plates is the same; the second electrode assembly includes: a second connecting part, which is arranged parallel to the first connecting part; a plurality of second electrode plates, which are arranged at the second connecting part, and the spacing between two adjacent second electrode plates is the same.

[0038] In this technical solution, the first electrode assembly includes a first connecting portion and multiple first electrode plates. Specifically, the multiple first electrode plates are mounted on the first connecting portion, which serves as a mounting support. Adjacent first electrode plates are spaced uniformly apart. The provision of multiple first electrode plates increases the effective area of ​​the first electrode plates.

[0039] Furthermore, the second electrode assembly includes a second connecting portion and multiple second electrode plates. Specifically, the second connecting portion is arranged parallel to the first connecting portion, and the multiple second electrode plates are arranged on the second connecting portion. The second connecting portion serves as a mounting support, and the spacing between adjacent second electrode plates is the same. The provision of multiple second electrode plates helps increase the effective area of ​​the second electrode plates.

[0040] In the above technical solution, the second electrode plate and the first electrode plate are arranged alternately, the second electrode plate and the first electrode plate are parallel to each other, and the gap between the second electrode plate and the first electrode plate forms a deposition space.

[0041] In this technical solution, second electrode plates are arranged alternately with first electrode plates, parallel to each other, and separated by ceramic. The gaps between the second and first electrode plates form deposition spaces. This allows for simultaneous processing of multiple materials, improving efficiency.

[0042] In the above technical solution, the material is parallel to the first electrode plate, and the material is parallel to the second electrode plate.

[0043] In this technical solution, by placing the material parallel to the first electrode plate and the material parallel to the second electrode plate, it is beneficial to increase the process processing area of ​​the two electrode assemblies and the hot wire assembly for the material, and improve the quality of the product after processing.

[0044] Additional aspects and advantages of embodiments of the present invention will become apparent in the following description or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A first schematic diagram of a coating device according to an embodiment of the present invention is shown;

[0046] Figure 2 A first schematic diagram of a hot wire assembly according to an embodiment of the present invention is shown;

[0047] Figure 3 A second schematic diagram of a coating device according to an embodiment of the present invention is shown;

[0048] Figure 4 A second schematic diagram of a hot wire assembly according to one embodiment of the present invention is shown;

[0049] Figure 5 A third schematic diagram of a coating device according to an embodiment of the present invention is shown;

[0050] Figure 6 A fourth schematic diagram of a coating apparatus according to an embodiment of the present invention is shown;

[0051] Figure 7 A fifth schematic diagram of a coating apparatus according to an embodiment of the present invention is shown;

[0052] Figure 8 A sixth schematic diagram of a coating apparatus according to an embodiment of the present invention is shown;

[0053] Figure 9 A seventh schematic diagram of a coating apparatus according to an embodiment of the present invention is shown;

[0054] Figure 10 An eighth schematic diagram of a coating apparatus according to an embodiment of the present invention is shown;

[0055] Figure 11 A ninth schematic diagram of a coating device according to an embodiment of the present invention is shown;

[0056] Figure 12 A tenth schematic diagram of a coating device according to an embodiment of the present invention is shown;

[0057] Figure 13 A schematic diagram of a first electrode assembly and a second electrode assembly according to one embodiment of the present invention is shown.

[0058] in, Figures 1 to 13 The corresponding relationship between the reference numerals and component names is as follows:

[0059] 100: Coating equipment; 111: First electrode assembly; 1111: First connecting portion; 1112: First electrode plate; 112: Second electrode assembly; 1121: Second connecting portion; 1122: Second electrode plate; 113: Deposition space; 120: Hot wire assembly; 121: Mounting frame; 122: Heating wire; 130: Cylinder; 141: Supporting column; 142: Limiting protrusion; 200: Material. DETAILED DESCRIPTION

[0060] In order to more clearly understand the above-mentioned purposes, features and advantages of the embodiments of the present invention, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be noted that the embodiments of the present invention and the features therein can be combined with each other without conflict.

[0061] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the embodiments of the present invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited to the specific embodiments disclosed below.

[0062] Refer to the following Figures 1 to 13 A coating apparatus 100 according to some embodiments of the present invention is described.

[0063] Example 1

[0064] like Figure 1 、 Figure 3 、 Figure 5 、 Figure 7 、 Figure 9 and Figure 11As shown, a coating apparatus 100 provided by one embodiment of the present invention includes a first electrode assembly 111, a second electrode assembly 112, and a hot wire assembly 120. A gap exists between the first electrode assembly 111 and the second electrode assembly 112, and the first electrode assembly 111 and the second electrode assembly 112 have opposite polarities. It is worth noting that the first electrode assembly 111 is a positive electrode and the second electrode assembly 112 is a negative electrode; alternatively, the first electrode assembly 111 is a negative electrode and the second electrode assembly 112 is a positive electrode.

[0065] Furthermore, the gap between the first electrode assembly 111 and the second electrode assembly 112 forms a deposition space 113, and the material 200 is located in the deposition space 113, and the material 200 is parallel to the first electrode assembly 111, and the material 200 is parallel to the second electrode assembly 112. Specifically, the material 200 can move in the deposition space 113 through a carrier, or move in the deposition space 113 together with the plasma assembly. After the plasma assembly is energized, radio frequency, intermediate frequency or high frequency is generated between the two electrode assemblies. The most commonly used is intermediate frequency, which is between 40kHz and 400kHz. In addition, the more commonly used radio frequency has a frequency of 13.56MHz to 60MHz. It should be noted that kHz is kilohertz and MHz is megahertz.

[0066] Furthermore, the hot wire assembly 120 is disposed between the first electrode assembly 111 and the second electrode assembly 112, or the hot wire assembly 120 is wound around the periphery of the first electrode assembly 111 and the second electrode assembly 112. In other words, the hot wire assembly 120 is disposed in the deposition space 113, or the hot wire assembly 120 is disposed at a location outside the deposition space 113. The hot wire assembly 120 is used to decompose the reactants using the temperature field, that is, to decompose the process gas into a plasma state using its own exothermic properties. Taking into account the type of coating equipment 100, the size of the occupied space, the cost, and other factors, the hot wire assembly 120 is flexibly arranged according to actual needs.

[0067] The material 200 in the present invention is a silicon heterojunction solar cell, although other types of materials 200 are also possible. Silicon heterojunction solar cells are cells that form a heterojunction by depositing an amorphous silicon-based thin film on the surface of crystalline silicon. Compared to traditional crystalline silicon cells, they offer advantages such as simpler processing, higher power generation, and lower cost per kilowatt-hour. Silicon heterojunction solar cells have become a hot topic in the photovoltaic industry.

[0068] Silicon heterojunction solar cells are typically fabricated using chemical vapor deposition (CVD), which comes in two forms: plasma-enhanced chemical vapor deposition (PECVD) and hot-wire chemical vapor deposition (HWCVD). In the plasma-enhanced chemical vapor deposition process, ions bombard the deposited film during the coating process due to the need to emit intermediate frequency or radio frequency (RF). Although the ion bombardment capability gradually decreases with increasing plasma RF frequency, it still exists. Furthermore, a side effect of increasing the plasma RF frequency is a reduction in the effective uniform film area.

[0069] In addition, although the hot wire chemical vapor deposition process of the related technology does not have the side effects of ion bombardment, its film formation uniformity is limited by the characteristics of the hot wire itself. The hot wire itself will also be coated, which will affect the stability of the coating, making it difficult to achieve uniformity over a large area and large-scale production.

[0070] In other words, using plasma-enhanced chemical vapor deposition or hot-wire chemical vapor deposition processes alone will have at least the following problems: ion bombardment causes defects in the film layer, uneven area makes mass production difficult, and hot-wire coating causes poor coating stability.

[0071] In the technical solution defined in the present invention, plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition processes are simultaneously used to coat silicon wafers. The hot wire assembly 120 can weaken the side effects of ion bombardment and reduce the possibility of defects in the film layer due to ion bombardment. The ion-free bombardment effect of the hot wire assembly 120 is beneficial to improving the quality of the deposited film. Combined with the plasma enhancement effect of the first electrode assembly 111 and the second electrode assembly 112, the deposition area of ​​the film is uniform, which reduces the possibility of coating the hot wire itself, is conducive to the large-scale production of solar cells, achieves the purpose of high-speed deposition of microcrystalline silicon and nano-silicon, and improves product quality.

[0072] The present invention provides a plasma-integrated hot-wire coating method, combining plasma and hot-wire technologies to achieve uniform, efficient, and damage-free coating over large areas. This method can be implemented by adding an HWCVD structure to a PECVD structure, or by adding a PECVD structure to an HWCVD structure. The hot-wire assembly 120 extends from a vacuum chamber and applies voltage to achieve vacuum heating. The plasma assembly ionizes the process gas using microwaves or radio frequency, generating a localized plasma.

[0073] The following method steps are one of the methods for adding a HWCVD structure to a PECVD structure:

[0074] Step 1: Design HWCVD structures suitable for plate and cylinder structures according to the type of PECVD structure. PECVD structures are divided into plate and cylinder types. The HWCVD structure can be flexibly set according to actual needs.

[0075] Step 2: Install the HWCVD structure into the PECVD structure;

[0076] Step 3: During the process, either radio frequency (RF) or hot wire can be used alone, or both RF and hot wire functions can work simultaneously.

[0077] The presence of the hot wire reduces the side effects of ion bombardment in PECVD, and uses the plasma electric field of PECVD to reduce the side effects of the reaction gas deposited on the hot wire. The hot wire's plasma-free bombardment effect is used to improve the quality of the deposited film. The high-speed deposition of the hot wire is combined with the RF plasma enhancement effect to improve the quality of the film deposition and form a good microstructure. The microstructure includes amorphous silicon, microcrystalline silicon (1e -6 m) and nano-silicon (1e -9 m).

[0078] It should be noted that: cylindrical CVD uses a quartz tube as the deposition chamber and a resistance furnace as the main heating body, and a graphite boat that can hold multiple silicon wafers is inserted into the quartz tube for deposition; plate CVD places multiple silicon wafers on a graphite carrier and puts them into a metal deposition chamber. There are flat electrodes in the chamber to form a discharge circuit, which decomposes the process gas into plasma and deposits it on the silicon wafer surface.

[0079] Example 2

[0080] like Figure 1 and Figure 3 As shown, the coating device 100 is a plate-type structure. By setting the coating device 100 to a plate-type structure, it can be understood that the first electrode assembly 111 and the second electrode assembly 112 are plate-type PECVD structures. According to the type of PECVD structure, a HWCVD structure suitable for the plate-type structure is designed. Figure 2 and Figure 4 As shown, the hot wire assembly 120 includes a mounting frame 121 and a heating wire 122. Specifically, the mounting frame 121 serves as a mounting carrier, and the heating wire 122 is inserted through the mounting frame 121. Under the action of the carrier, the material 200 can move between the heating wire 122 and one of the electrode assemblies to complete the coating process.

[0081] Furthermore, the hot wire assembly 120 includes a receiving post 141. One end of the receiving post 141 is connected to the first electrode assembly 111, and the other end of the receiving post 141 is connected to the second electrode assembly 112. The mounting frame 121 is disposed in the deposition space 113. The receiving post 141 is provided with a stopper protrusion 142, and the mounting frame 121 is connected to the stopper protrusion 142.

[0082] It is worth noting that in the control system, the hot wire and radio frequency do not interfere with each other. Depending on the actual process requirements, either one or a combination can be used. There are four receiving posts 141, which are located at the four corners of the electrode assembly to improve the connection strength between the two electrode assemblies.

[0083] Furthermore, there are multiple heating wires 122 , and the multiple heating wires 122 are arranged in parallel, which is beneficial to enhancing the heating function of the hot wire assembly 120 and improving the quality of the product after the process.

[0084] It is worth noting that if Figure 2 As shown, multiple heating wires 122 are arranged in parallel, and there may be no connection between two adjacent heating wires 122, that is, each heating wire 122 is electrically connected to the power supply component separately. When one of the heating wires 122 fails, the other heating wires 122 will continue to work; or Figure 4 As shown, two adjacent heating wires 122 are connected end to end, which is convenient for workers to connect the wires. The workers only need to connect the entire group of wires once, which is conducive to improving work efficiency.

[0085] Optionally, in this embodiment, the first electrode assembly 111 and the second electrode assembly 112 are arranged in parallel.

[0086] Example 3

[0087] like Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 and Figure 12 As shown, the coating apparatus 100 has a cylindrical structure. By configuring the coating apparatus 100 as a cylindrical structure, it can be understood that the first electrode assembly 111 and the second electrode assembly 112 are cylindrical PECVD structures. Depending on the type of PECVD structure, an HWCVD structure suitable for the cylindrical structure can be designed. Furthermore, the coating apparatus 100 also includes a cylindrical body 130. Specifically, the first electrode assembly 111 and the second electrode assembly 112 are both disposed within the cylindrical body 130. Under the action of a carrier or plasma assembly, the material 200 can be moved along the length of the cylindrical body 130 to complete the coating process.

[0088] Further, if Figure 5 、 Figure 6 、 Figure 7 and Figure 8 As shown, the hot wire assembly 120 includes a heating wire 122. Specifically, the heating wire 122 is disposed inside the barrel 130, and the heating wire 122 is circumferentially arranged along the inner wall of the barrel 130. The arrangement direction of the heating wire 122 is consistent with the length direction of the barrel 130, which is conducive to enhancing the heating function of the hot wire assembly 120 and improving the quality of the processed product.

[0089] It is worth noting that the number of heating wires 122 can be one, two, or more. When there is only one heating wire 122, the heating wire 122 is arranged in a spiral. When there are two or more heating wires 122, the heating wires 122 are spiral or ring-shaped, with two adjacent heating wires 122 arranged in parallel, or the heating wire 122 with a larger radial dimension is arranged outside the heating wire 122 with a smaller radial dimension. Considering the space occupied, heating effect, cost, and other factors, the heating wire 122 can be flexibly arranged according to actual needs.

[0090] In another embodiment, Figure 9 、 Figure 10 、 Figure 11 and Figure 12 As shown, the hot wire assembly 120 includes a heating wire 122. Specifically, the heating wire 122 spirally extends along the inner wall of the cylinder 130, and the heating wire 122 is arranged in the axial direction of the cylinder 130. It can be understood that the axial direction of the heating wire 122 is consistent with the length direction of the cylinder 130, and the axis of the heating wire 122 is parallel to or coincides with the axis of the cylinder 130. According to the structure of the coating equipment 100, the arrangement of the heating wire 122 is conducive to enhancing the heating function of the hot wire assembly 120, thereby improving the quality of the processed product.

[0091] Example 4

[0092] like Figure 13 As shown, the first electrode assembly 111 includes a first connecting portion 1111 and multiple first electrode plates 1112. Specifically, multiple first electrode plates 1112 are provided on the first connecting portion 1111, which serves as a mounting carrier. The spacing between adjacent first electrode plates 1112 is uniform. The provision of multiple first electrode plates 1112 increases the effective area of ​​the first electrode plates 1112.

[0093] Furthermore, the second electrode assembly 112 includes a second connecting portion 1121 and multiple second electrode plates 1122. Specifically, the second connecting portion 1121 is arranged parallel to the first connecting portion 1111, and multiple second electrode plates 1122 are arranged on the second connecting portion 1121. The second connecting portion 1121 serves as a mounting support, and the spacing between adjacent second electrode plates 1122 is the same. The provision of multiple second electrode plates 1122 helps increase the effective area of ​​the second electrode plates 1122.

[0094] Furthermore, the second electrode plates 1122 are arranged alternately with the first electrode plates 1112, and are parallel to each other. The gap between the second electrode plates 1122 and the first electrode plates 1112 forms a deposition space, and adjacent first and second electrode plates 1112 and 1122 are separated by ceramic. It can be understood that multiple deposition spaces 113 are formed between multiple first electrode plates 1112 and multiple second electrode plates 1122, allowing multiple materials 200 to be processed simultaneously, which is beneficial to improving work efficiency.

[0095] Furthermore, the material 200 is parallel to the first electrode plate 1112 and the second electrode plate 1122 , which is beneficial to increasing the processing area of ​​the two electrode assemblies and the hot wire assembly 120 for the material 200 and improving the quality of the processed product.

[0096] It is worth noting that if Figure 6 and Figure 10 As shown, the first electrode plate 1112 in the first electrode assembly 111 is vertically arranged, and the second electrode plate 1122 in the second electrode assembly 112 is vertically arranged, and the material 200 is also vertically arranged; Figure 8 and Figure 12 As shown, the first electrode plate 1112 in the first electrode assembly 111 is horizontally arranged, and the second electrode plate 1122 in the second electrode assembly 112 is vertically arranged. At this time, the material 200 is horizontally arranged.

[0097] According to an embodiment of the coating equipment of the present invention, plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition processes are simultaneously used to coat silicon wafers. The hot wire assembly can weaken the side effects of ion bombardment and reduce the possibility of defects in the film layer due to ion bombardment. The non-ion bombardment effect of the hot wire assembly is beneficial to improving the quality of the deposited film. Combined with the plasma enhancement effect of the first electrode assembly and the second electrode assembly, the deposition area of ​​the film is uniform, which reduces the possibility of coating the hot wire itself, is conducive to the large-scale production of solar cells, achieves the purpose of high-speed deposition of microcrystalline silicon and nano silicon, and improves product quality.

[0098] In the present invention, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "plurality" refers to two or more, unless expressly limited otherwise. Terms such as "installed," "connected," "connected," and "fixed" should be interpreted broadly. For example, "connected" can mean a fixed connection, a detachable connection, or an integral connection; "connected" can mean a direct connection or an indirect connection through an intermediary. Those skilled in the art will understand the specific meanings of these terms in the present invention based on specific circumstances.

[0099] In the description of the present invention, it should be understood that the directions or positional relationships indicated by terms such as "up", "down", "left", "right", "front" and "back" are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or unit referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting the present invention.

[0100] Throughout this specification, terms such as "one embodiment," "some embodiments," and "specific embodiments" mean that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0101] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A coating device, characterized in that: include: a first electrode assembly (111); a second electrode assembly (112) having a polarity opposite to that of the first electrode assembly (111), wherein a gap between the second electrode assembly (112) and the first electrode assembly (111) forms a deposition space (113); A hot wire assembly (120) is provided between the first electrode assembly (111) and the second electrode assembly (112), or the hot wire assembly (120) is wound around the periphery of the first electrode assembly (111) and the second electrode assembly (112), and the hot wire assembly (120) is used to decompose the reactant by utilizing a temperature field. wherein the material (200) is located in the deposition space (113), the material (200) is parallel to the first electrode assembly (111), and the material (200) is parallel to the second electrode assembly (112); When the coating device is a plate-type structure, the hot wire assembly (120) includes: A mounting frame (121) is provided in the deposition space (113); A heating wire (122) is passed through the mounting frame (121); A receiving column (141), one end of the receiving column (141) is connected to the first electrode assembly (111), and the other end of the receiving column (141) is connected to the second electrode assembly (112); a limiting protrusion (142) is provided on the receiving column (141), and the mounting frame (121) is connected to the limiting protrusion (142); In the case where the coating equipment is a cylindrical structure, the coating equipment further comprises: A cylinder (130), wherein the first electrode assembly (111) and the second electrode assembly (112) are both arranged inside the cylinder (130), and the material (200) can move along the length direction of the cylinder (130); The number of the heating wires (122) is multiple, and the multiple heating wires (122) are arranged in parallel; and / or A plurality of the heating wires (122) are connected end to end; The first electrode assembly (111) comprises: A first connecting portion (1111) is provided inside the cylinder (130); A plurality of first electrode plates (1112) are provided on the first connecting portion (1111), and the distance between two adjacent first electrode plates (1112) is the same; The second electrode assembly (112) comprises: A second connecting portion (1121) is provided inside the cylinder (130), and the second connecting portion (1121) is provided in parallel with the first connecting portion (1111); A plurality of second electrode plates (1122) are provided on the second connecting portion (1121), and the distance between two adjacent second electrode plates (1122) is the same; The second electrode plate (1122) and the first electrode plate (1112) are arranged alternately, the second electrode plate (1122) and the first electrode plate (1112) are parallel to each other, and the gap between the second electrode plate (1122) and the first electrode plate (1112) forms the deposition space (113); There are four receiving posts, and the four receiving posts are respectively located at the four corners of the electrode assembly.

2. The coating equipment according to claim 1, characterized in that: The hot wire assembly (120) comprises: The heating wire (122) is arranged inside the cylinder (130). The heating wire (122) is arranged circumferentially along the inner wall of the cylinder (130). The arrangement direction of the heating wire (122) is consistent with the length direction of the cylinder (130).

3. The coating equipment according to claim 1, characterized in that: The hot wire assembly (120) comprises: A heating wire (122) is arranged inside the cylinder (130) in an axial direction around the cylinder (130).

4. The coating equipment according to claim 1, characterized in that: The material (200) is parallel to the first electrode plate (1112), and the material (200) is parallel to the second electrode plate (1122).

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