hermetically completely filled metallized through-hole via

Abstract

According to various embodiments, an article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface; and a via extending through the substrate in an axial direction from the first major surface to the second major surface an axial length L, the via defining an inner surface; and a first axial portion, a third axial portion, and a second axial portion disposed between the first axial portion and the third axial portion along the axial direction. The article further includes a helium gas- impermeable adhesion layer disposed on the inner surface at least in the first axial portion and / or the third axial portion; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium gas-impermeable adhesion layer. The metal connector completely fills the via within the axial length L of the via, the via having a maximum diameter Φ 最大 and an axial length L, and the maximum diameter Φ 最大 satisfies the equation:

Description

[0001] This application claims priority to U.S. Provisional Application Serial No. 62 / 801,418, filed February 5, 2019, the contents of which are relied upon and incorporated herein by reference in its entirety. TECHNICAL FIELD

[0002] The present specification generally relates to through-holes in glass and glass-ceramic substrates, and more particularly, to hermetically sealed, fully filled metallized through-holes in glass and glass-ceramic substrates. BACKGROUND

[0003] Glass and glass-ceramic substrates having through-holes are desirable for many applications, including for use in interposers, as electrical interfaces, RF filters, and RF switches. Glass substrates have become an attractive alternative to silicon and fiber-reinforced polymers for these applications.

[0004] It is desirable to fill such through-holes with a conductor. Currently, copper is the most desirable material for such conductors. However, copper does not adhere well to glass. In particular, for some applications, a hermetic seal between the copper and the glass is desired. Such a seal is difficult to obtain because copper does not adhere well to glass and because the coefficient of thermal expansion of many conductor materials (e.g., copper) and many desirable glass and glass-ceramic substrate compositions have a large mismatch. Furthermore, when copper adheres to glass, the large coefficient of thermal expansion mismatch of copper and glass causes radial and / or circumferential cracking of the glass to form when the glass article is subjected to high temperature processing. Radial cracks form during heating because the free expansion of the copper is constrained by the matrix glass, resulting in a high stress build-up that leads to the formation of radial cracks. On the other hand, circumferential cracks form during cooling. The free shrink of the copper is constrained by the glass matrix, resulting in a stress build-up and the formation of circumferential cracks.

[0005] While a conformal coating having cavities within the conductor material can reduce stress build-up and the formation of circumferential cracks, such cavities can become contaminated with corrosive materials during post-processing or use, leading to degradation of the conductor material.

[0006] Accordingly, there is a need for alternative methods for metallizing hermetically sealed through-glass vias. SUMMARY

[0007] According to a first aspect, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface; and a via extending through the substrate in an axial direction from the first major surface to the second major surface an axial length L, the via defining an inner surface; and a first axial portion, a third axial portion, and a second axial portion disposed between the first axial portion and the third axial portion along the axial direction. The article further comprises a helium gas-tight adhesion layer disposed on the inner surface at least in the first axial portion and / or the third axial portion; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium gas-tight adhesion layer. The metal connector completely fills the via within the axial length L of the via, the via having a maximum diameter Φ 最大 and the axial length L and the maximum diameter Φ 最大 satisfy the equation:

[0008]

[0009] According to a second aspect, an article comprises the article according to the first aspect, wherein the helium gas-tight adhesion layer comprises Ti, TiN, Ta, TaN, Cr, Ni, and a metal oxide.

[0010] According to a third aspect, an article comprises the article according to the first or second aspect, wherein the metal connector consists essentially of copper.

[0011] According to a fourth aspect, an article comprises the article according to any of the preceding aspects, wherein the metal connector hermetically seals the via.

[0012] According to a fifth aspect, an article comprises the article according to any of the preceding aspects, wherein the via has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the third diameter is less than the first diameter and the second diameter.

[0013] According to a sixth aspect, an article comprises the article according to the fifth aspect, wherein the helium gas-tight adhesion layer is disposed on the inner surface in the first axial portion, the second axial portion, and the third axial portion.

[0014] According to a seventh aspect, an article comprises the article according to the sixth aspect, wherein the maximum diameter Φ 最大 is less than or equal to 27 pm.

[0015] According to a 8th aspect, an article comprises the article according to the 5th aspect, wherein a helium gas-tight adhesive layer is provided on the inner surface in the first axial portion and / or in the third axial portion, and wherein the adhesive layer is not provided on the inner surface in the second axial portion.

[0016] According to a 9th aspect, an article comprises the article according to the 8th aspect, wherein the maximum diameter Φ 最大 is less than or equal to 25 pm.

[0017] According to a 10th aspect, an article comprises the article according to any one of the 1st to 4th aspects, wherein the through-hole has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the first diameter is greater than the second diameter and the third diameter, and wherein the third diameter is greater than the second diameter.

[0018] According to an 11th aspect, an article comprises the article according to the 10th aspect, wherein a helium gas-tight adhesive layer is provided on the inner surface in the first axial portion, in the second axial portion, and in the third axial portion.

[0019] According to a 12th aspect, an article comprises the article according to the 11th aspect, wherein the maximum diameter Φ 最大 is less than or equal to 19 pm.

[0020] According to a 13th aspect, an article comprises the article according to the 10th aspect, wherein a helium gas-tight adhesive layer is provided on the inner surface in the first axial portion and / or in the third axial portion, and wherein the adhesive layer is not provided on the inner surface in the second axial portion.

[0021] According to a 14th aspect, an article comprises the article according to the 13th aspect, wherein the maximum diameter Φ 最大 is less than or equal to 17 pm.

[0022] According to a 15th aspect, an article comprises the article according to any one of the 1st to 4th aspects, wherein the through-hole has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the first diameter is equal to the second diameter and the third diameter.

[0023] According to a 16th aspect, an article comprises the article according to the 15th aspect, wherein a helium gas-tight adhesive layer is provided on the inner surface in the first axial portion, in the second axial portion, and in the third axial portion.

[0024] According to a 17th aspect, an article comprises the article according to the 15th aspect, wherein a helium gas-tight adhesive layer is disposed on the inner surface in the first axial portion and / or the third axial portion, and wherein the helium gas-tight adhesive layer is not disposed on the inner surface in the second axial portion.

[0025] According to an 18th aspect, an article comprises the article according to the 17th aspect, wherein the maximum diameter Φ 最大 is less than or equal to 25 pm.

[0026] According to a 19th aspect, an article comprises the article according to any of the preceding aspects, wherein the axial length L of the through-hole is greater than or equal to 150 pm and less than or equal to 500 pm.

[0027] According to a 20th aspect, an article comprises the article according to any of the preceding aspects, wherein the axial length L and the maximum diameter Φ 最大 satisfy the equation:

[0028]

[0029] According to a 21st aspect, an article comprises the article according to any of the preceding aspects, wherein the article is free of cracks and has a helium permeability of less than 10 -5 atm*cc / s before and after being heated to a temperature of 450 °C and cooled to a temperature of 23 °C.

[0030] According to a 22nd aspect, an article comprises the article according to any of the preceding aspects, wherein the substrate comprises at least 90 wt% silica.

[0031] According to a 23rd aspect, a method of manufacturing a glass article comprises depositing a helium gas-tight adhesive layer on a portion of an inner surface of a through-hole extending through a glass or glass-ceramic substrate, the substrate having a first major surface and a second major surface opposite the first major surface, and the through-hole extending in an axial direction through the substrate from the first major surface to the second major surface, the through-hole comprising a first axial portion, a third axial portion, and a second axial portion disposed between the first axial portion and the third axial portion, wherein the helium gas-tight adhesive layer is deposited on at least the inner surface of the through-hole in the first axial portion and / or the third axial portion; and depositing a metal connector on the first, second, and third axial portions of the through-hole until the through-hole is completely filled. The metal connector completely fills the through-hole in an axial length L of the through-hole in the axial direction, the through-hole having a maximum diameter Φ 最大 of less than or equal to 30 pm, and the axial length L and the maximum diameter Φ 最大 satisfy the equation:

[0032]

[0033] According to a 24th aspect, a method includes the method of the 23rd aspect, wherein the helium gas-tight adhesion layer comprises one or more of Ti, TiN, Ta, TaN, Cr, Ni, and a metal oxide.

[0034] According to a 25th aspect, a method includes the method of the 23rd or 24th aspect, wherein the metal connector consists essentially of copper.

[0035] According to a 26th aspect, a method includes the method of any of aspects 23-25, wherein the metal connector hermetically seals the via.

[0036] According to a 27th aspect, a method includes the method of any of aspects 23-26, wherein depositing the metal connector comprises depositing the metal connector using electroplating.

[0037] According to a 28th aspect, a method includes the method of any of aspects 23-27, wherein depositing the helium gas-tight adhesion layer comprises depositing the helium gas-tight adhesion layer on the inner surface of the via in the first axial portion, the second axial portion, and the third axial portion.

[0038] According to a 29th aspect, a method includes the method of any of aspects 23-27, wherein depositing the helium gas-tight adhesion layer comprises depositing the helium gas-tight adhesion layer on the inner surface of the via in the first axial portion and / or the third axial portion, and wherein the helium gas-tight adhesion layer is not deposited on the inner surface in the second axial portion.

[0039] According to a 30th aspect, a method includes the method of any of aspects 23-29, wherein the substrate comprises at least 90 wt.% silica. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 A perspective view of a substrate having a via is shown;

[0041] Figure 2 A cross-sectional view of a via taken along line 2-2' of Figure 1 having a necked configuration and is partially bonded;

[0042] Figure 3 A cross-sectional view of a via taken along line 2-2' of Figure 1 having a necked configuration and is fully bonded;

[0043] Figure 4 a cross-sectional view of a via taken along line 2-2' of Figure 1 having a tapered configuration and being partially bonded;

[0044] Figure 5 a cross-sectional view of a via taken along line 2-2' of Figure 1 having a tapered configuration and being fully bonded;

[0045] Figure 6 a cross-sectional view of a via taken along line 2-2' of Figure 1 having a cylindrical configuration and being partially bonded;

[0046] Figure 7 a cross-sectional view of a via taken along line 2-2' of Figure 1 having a cylindrical configuration and being fully bonded;

[0047] Figure 8 a flowchart showing a process of fabricating a via;

[0048] Figure 9 showing a configuration of a via with a copper conformal coating for modeling;

[0049] Figure 10A is a plot of the stress-strain relationship for the modeled elastic-perfectly plastic material described herein;

[0050] Figure 10B is a plot of the temperature-dependent yield stress for the modeled copper described herein;

[0051] Figure 11 is a plot of the modeled first maximum principal stress and the modeled maximum radial stress (y-axis) for various copper coating thicknesses (x-axis);

[0052] Figure 12 is a plot of the modeled first maximum principal stress (y-axis) for various via diameters (x-axis) for a fully filled, partially bonded via; and

[0053] Figure 13 is a plot of the modeled first maximum principal stress (y-axis) for various via diameters (x-axis) for a fully filled, fully bonded via. DETAILED DESCRIPTION

[0054] Unless specifically stated otherwise, any methods described herein are not to be construed as requiring their steps be performed in a particular order, or requiring any particular orientation of the subject matter. Thus, if a method claim does not explicitly call out the order of steps, or the order of components of any device claim, or the order or orientation of components of a device, or the specification or description does not otherwise specifically state that steps are limited to a particular order, or that the order or orientation of components is limited, then in no way should that be inferred from the claim language. This applies to any possible non-expressive bases for interpretation, including: logical problems involving the arrangement of steps, operational flow, order of components, or orientation of components; problems of plain meaning derived from grammatical structure or punctuation; and problems of the number or type of embodiments described in the specification.

[0055] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a" component includes aspects with two or more such components unless the text explicitly indicates otherwise. And, unless the text explicitly states otherwise, the term "or" is used in its inclusive sense (e.g., "x or y" means x or y, or both).

[0056] The term "and / or" is also used in its inclusive sense (e.g., "x and / or y" means one or both x or y). In cases where "and / or" or "or" is used to connect a group of three or more items, the group should be interpreted as including only one item, all items together, or any combination or number of the items. Additionally, the use of the terms "have", "has", "containing", and "containing", in the specification and claims, are understood to be synonymous with the terms comprising and including.

[0057] As used herein, the term "about" means quantities, dimensions, formulations, parameters, and other quantities and characteristics need not be exact, but can be approximate and / or larger or smaller, as desired, reflecting tolerances, conversion factors, rounding off, measurement error and the like, and other factors that are well-known to those skilled in the art. When the term "about" is used in reference to a number or a range of values, the disclosure then includes the specific value or range recited and error on the higher or lower of the values recited. Whether the number or range of values is expressly recited or not, the number or range of values is intended to include both the exact value or range recited and the exact value or range modified by "about". It is further understood that the endpoints of the ranges are significant, and that the ranges are meant to include the endpoints.

[0058] The disclosed ranges are to be understood as encompassing any and all subranges or individual values within the ranges, and the endpoints of the ranges, and are to be understood as providing support for claims that describe any and all subranges or individual values therein. For example, a stated range of 1 to 10 should be considered to include any and all subranges between (and inclusive of) the minimum value of 1 and the maximum value of 10; that is, all subranges between 1 -5.5, 2-4.1, 3-4.5, 3.5- 10, 4-10, 5-10, 5.5-10, 6-10, 7-10, 8-10, 9-10, etc.; and all individual values of 1, 1.1, 1.2, 1.3, 1.4, 1.5, etc. up to and including 10.

[0059] Glass and glass-ceramic substrates with through-holes

[0060] Glass and glass-ceramic substrates with through-holes are desirable for a variety of applications. For example, 3D interposers with through- package via (TPV) interconnects and that connect logic devices on one side of the interposer and memory on the other side of the interposer are desirable for high bandwidth devices. Existing substrates are either formed from organic materials or from silicon. However, organic interposers have poor dimensional stability issues, while silicon wafers are expensive and have high dielectric loss issues. Glass and glass-ceramics can be superior substrate materials due to their relatively low dielectric constants, their thermal stability, and lower cost. Glass or glass-ceramic substrates with through-glass vias (TGVs) have some applications. These through-holes typically need to be completely or conformally filled with a conductive metal, such as copper, to form an electrical via. Copper is a particularly desirable conductive metal, but it does not adhere well to glass and there is a large coefficient of thermal expansion mismatch between copper and many substrate compositions. The large coefficient of thermal expansion mismatch between copper and glass can result in radial and / or circumferential cracking of the glass when the glass article is subjected to high temperature processing. Accordingly, various embodiments described herein have through-holes with diameters that are limited below a critical threshold, thereby enabling the through-holes to be completely filled with copper without causing cracking of the substrate when subjected to high temperature processing.

[0061] Figure 1An article comprising a substrate 100 is shown, schematically depicted in partial perspective view. The substrate 100 includes a first major surface 102 and a second major surface 104 opposite the first major surface 102. A plurality of vias 110 extend through the bulk of the substrate 100 from the first major surface 102 to the second major surface 104. Metal connections 150 fill the vias 110. It is understood that any number of vias 110 can extend through the substrate 100 in any arrangement. Coordinate indicia 101 shows the direction of the axial dimension z, which is perpendicular to the plane of the first major surface 102 and the second major surface 104. Unless otherwise specified, the "length" of a via or metal connection is in the axial dimension z. The thickness t of the substrate 100 is sometimes referred to herein as the axial length L, which is in the axial dimension, which can be any suitable thickness depending on the application.

[0062] In various embodiments, the substrate 100 can comprise any suitable glass or glass-ceramic substrate. In some particular embodiments, high silica glass or glass-ceramic substrates are desirable for certain applications due to their dielectric properties. For example, a glass or glass-ceramic material having a silica content of 50 mol%, 55 mol%, 60 mol%, 65 mol%, 70 mol%, 75 mol%, 80 mol%, 85 mol%, 90 mol%, 95 mol%, or 100 mol%, or any range (including endpoints) having any two of these values as endpoints can be used. A glass or glass-ceramic material having a silica content of 50 mol% to 100 mol%, or 75 mol% to 100 mol% can be used. In particular embodiments, the substrate comprises at least 90 wt% silica.

[0063] For substrates having the dimensions described herein, it is particularly difficult to obtain hermetically sealed vias in high silica glass with copper metal connections, at least for two reasons. First, copper does not adhere well to glass. Second, the CTE mismatch between copper and high silica glass is particularly large, which can cause the substrate to crack when the substrate is subjected to thermal cycling. Despite these reasons, the articles and methods described herein achieve hermetic sealing by providing an excellent stress relief mechanism.

[0064] Figures 2-7 An article comprising a substrate 100 is shown, schematically depicted in partial perspective view. The substrate 100 includes a first major surface 102 and a second major surface 104 opposite the first major surface 102. A plurality of vias 110 extend through the bulk of the substrate 100 from the first major surface 102 to the second major surface 104. Metal connections 150 fill the vias 110. It is understood that any number of vias 110 can extend through the substrate 100 in any arrangement. Coordinate indicia 101 shows the direction of the axial dimension z, which is perpendicular to the plane of the first major surface 102 and the second major surface 104. Unless otherwise specified, the "length" of a via or metal connection is in the axial dimension z. The thickness t of the substrate 100 is sometimes referred to herein as the axial length L, which is in the axial dimension, which can be any suitable thickness depending on the application. Figure 1 Figures 2-7 An article comprising a substrate 100 is shown, schematically depicted in partial perspective view. The substrate 100 includes a first major surface 102 and a second major surface 104 opposite the first major surface 102. A plurality of vias 110 extend through the bulk of the substrate 100 from the first major surface 102 to the second major surface 104. Metal connections 150 fill the vias 110. It is understood that any number of vias 110 can extend through the substrate 100 in any arrangement. Coordinate indicia 101 shows the direction of the axial dimension z, which is perpendicular to the plane of the first major surface 102 and the second major surface 104. Unless otherwise specified, the "length" of a via or metal connection is in the axial dimension z. The thickness t of the substrate 100 is sometimes referred to herein as the axial length L, which is in the axial dimension, which can be any suitable thickness depending on the application. Figure 1 ​substrate 100, coordinate marker 101, first major surface 102, second major surface 104, through-hole 110, and metal connector 150. Inner surface 114 of through-hole 110 is divided into first axial portion 116, second axial portion 118, and third axial portion 120. In first axial portion 116 and third axial portion 120, a helium gas-tight adhesive layer 122 is disposed on inner surface 114 of through-hole 110. In embodiments, helium gas-tight adhesive layer 122 is disposed on inner surface 114 of through-hole 110 along an entire perimeter of at least one of first axial portion 116 and / or third axial portion 120. Thus, although Figures 2-7 While helium gas-tight adhesive layer 122 is depicted as being located in at least first axial portion 116 and third axial portion 120, it is contemplated that in other embodiments, helium gas-tight adhesive layer 122 can be located in first axial portion 116 and not in third axial portion 120, or in third axial portion 120 and not in first axial portion 116. In some embodiments, for example, Figure 2 , 4 In the embodiments shown in FIGS. 1-6, helium gas-tight adhesive layer 122 is not present in second axial portion 118. Such embodiments are referred to as "partially bonded." However, in other embodiments, for example, Figure 3 , 5 In the embodiments shown in FIGS. 1-6, helium gas-tight adhesive layer 122 is not present in second axial portion 118. Such embodiments are referred to as "partially bonded." However, in other embodiments, for example, Figure 3 , 5 In the embodiments shown in FIGS. 1-6, helium gas-tight adhesive layer 122 is not present in second axial portion 118. Such embodiments are referred to as "partially bonded." However, in other embodiments, for example, Figure 3 , 5 In the embodiments shown in FIGS. 1-6, helium gas-tight adhesive layer 122 is not present in second axial portion 118. Such embodiments are referred to as "partially bonded." However, in other embodiments, for example, Figure 3 , 5 In the embodiments shown in FIGS. 1-6, helium gas-tight adhesive layer 122 is not present in second axial portion 118. Such embodiments are referred to as "partially bonded." However, in other embodiments, for example, Figure 3 , 5

[0065] The phrase "helium gas-tight adhesive layer" as used herein means an adhesive layer that provides a gas-tightness to helium at a permeability of less than 10 -5 atm*cc / s, as measured by adhering metal connector 150 to inner surface 114 of through-hole 110 using a vacuum-based helium leak detection test system. In some embodiments, the adhesive layer provides a gas-tightness to helium at a permeability of less than 10 -8The permeability of the atm*cc / s provides a helium gas-tightness. Suitable helium gas-tight adhesion layer materials include metals, such as titanium (Ti), chromium (Cr), tantalum (Ta), vanadium (V), nickel (Ni), tungsten (W), or metal oxides, such as zinc oxide, tungsten oxide, and manganese oxide, or nitrides, for example, titanium nitride (TiN) and tantalum nitride (TaN). In various embodiments, the helium gas-tight adhesion layer comprises one or more of: Ti, TiN, Ta, TaN, Cr, Ni, and metal oxides. The helium gas-tight adhesion layer has a thickness greater than or equal to 1 nm and less than or equal to 500 nm. For example, in some particular embodiments, the helium gas-tight adhesion layer has a thickness of about 100 nm.

[0066] In some embodiments, such as in partially bonded embodiments, the axial length of the first axial portion 116 or the third axial portion 120 can be referred to as an "adhesion length" because this length is the length along which the metal connector 150 is firmly adhered to the substrate 100 in the through-hole 110. In some such embodiments, the adhesion length is greater than or equal to 5 pm and less than or equal to 148 pm. The adhesion length can be greater than or equal to 10 pm and less than or equal to 135 pm, greater than or equal to 10 pm and less than or equal to 130 pm, greater than or equal to 10 pm and less than or equal to 125 pm, greater than or equal to 10 pm and less than or equal to 120 pm, greater than or equal to 10 pm and less than or equal to 115 pm, greater than or equal to 15 pm and less than or equal to 140 pm, greater than or equal to 15 pm and less than or equal to 135 pm, greater than or equal to 15 pm and less than or equal to 130 pm, greater than or equal to 15 pm and less than or equal to 125 pm, greater than or equal to 15 pm and less than or equal to 120 pm, greater than or equal to 20 pm and less than or equal to 140 pm, greater than or equal to 20 pm and less than or equal to 135 pm, greater than or equal to 20 pm and less than or equal to 130 pm, greater than or equal to 20 pm and less than or equal to 125 pm, greater than or equal to 25 pm and less than or equal to 140 pm, greater than or equal to 25 pm and less than or equal to 135 pm, greater than or equal to 25 pm and less than or equal to 130 pm, greater than or equal to 130 pm and less than or equal to 140 pm, greater than or equal to 30 pm and less than or equal to 35 pm, or greater than or equal to 35 pm and less than or equal to 140 pm. In some embodiments, the adhesion length is greater than or equal to 40 pm and less than or equal to 140 pm, greater than or equal to 40 pm and less than or equal to 130 pm, greater than or equal to 40 pm and less than or equal to 120 pm, greater than or equal to 40 pm and less than or equal to 110 pm, greater than or equal to 40 pm and less than or equal to 100 pm, greater than or equal to 40 pm and less than or equal to 90 pm, greater than or equal to 40 pm and less than or equal to 80 pm, greater than or equal to 40 pm and less than or equal to 70 pm, or greater than or equal to 40 pm and less than or equal to 60 pm. For example, the adhesion length can be about 40 pm, 50 pm, 60 pm, or 70 pm. It is contemplated that other adhesion lengths can also be employed in various embodiments.

[0067] The through-hole 110 has a through-hole length 130 in the axial direction, which is sometimes referred to herein as the axial length L of the through-hole 110. In fully bonded embodiments, the adhesion length can be equal to the through-hole length 130. The through-hole 110 has a first diameter 132a at the first major surface 102, a second diameter 132b at the second major surface 104, and a third diameter 132c in the second axial portion 118.

[0068] like Figures 2-7 As shown, the metal connector 150 completely fills the through-hole 110 along its axial length L from the first main surface 102 to the second main surface 104, thereby eliminating the possibility of contamination within the cavity of the metal connector 150. The metal connector can be formed of any suitable metal. In some embodiments, copper is a desirable metal due to its particularly high electrical conductivity. Gold, silver, and other conductive metals, as well as alloys of conductive metals, can also be used. In some embodiments, the metal connector comprises copper. In some specific embodiments, the metal connector is substantially composed of copper. The metal connector 150 adhered within the through-hole 110 provides an airtight seal to the through-hole 110.

[0069] Through hole shape

[0070] In the embodiments described herein, the through-hole 110 can have any of various shapes. Figure 2 and Figure 3 In the illustrated embodiment, the through-hole 110 has a tapered inner surface 114 that tapers or narrows from a first diameter 132a at the first main surface 102 and a second diameter 132b at the second main surface 104 to a waist 125 having a waist diameter equal to a third diameter 132c. This configuration is referred to herein as a fully filled necked through-hole, or FPV. As used herein, the “waist” of a through-hole refers to the portion of a through-hole with a variable diameter having a minimum diameter. In these embodiments, the diameter of the through-hole 110 can vary depending on the axial position. The total “diameter” of the through-hole 110 is the maximum diameter Φ. 最大 Unless otherwise specified, "through hole diameter" refers to the maximum diameter. When the through hole 110 is not circular, the "diameter" of the through hole 110 is the diameter of a circle having the same cross-sectional area as the through hole 110 in a plane perpendicular to the axial direction.

[0071] The via waist 125 has a minimum diameter along the axial length of the via. The diameter of the via waist can be 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range having any two of these values as endpoints, inclusive, as a percentage of the first diameter. The diameter of the via waist can be 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, or any range having any two of these values as endpoints, inclusive, as a percentage of the second diameter. The diameter of the via waist can be 75% or less of the first diameter, and the diameter of the via waist can be 75% or less of the second diameter. The diameter of the via waist can be 20% to 50% or less of the first diameter, and the diameter of the via waist can be 20% to 50% or less of the second diameter. In various embodiments, the third diameter 132c, or the via waist, is greater than or equal to 10 pm and less than or equal to 30 pm. The third diameter 132c can be greater than or equal to 20 pm and less than or equal to 30 pm, or greater than or equal to 22 pm and less than or equal to 27 pm. For example, the third diameter 132c can be 10 pm, 15 pm, 20 pm, 22 pm, 25 pm, 27 pm, or 30 pm. In various embodiments, the ratio of the third diameter 132c to the first diameter 132a is less than or equal to 1 :6, less than or equal to 1 :5, less than or equal to 1 :4, less than or equal to 1 :3, or less than or equal to 1 :2, and / or the ratio of the third diameter 132c to the second diameter 132b is less than or equal to 1 :6, less than or equal to 1 :5, less than or equal to 1 :4, less than or equal to 1 :3, or less than or equal to 1 :2.

[0072] The via 110 optionally has a rounded corner 124 at the inner edge to reduce stress concentration, including at the via waist 125. As used herein, “rounded corner” refers to a rounded corner along an interior corner of the via 110. Such rounded corners can be used at any edge of the via shape. The rounded corner 124 can have any suitable diameter, for example, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, or any range having any two of these values as endpoints, inclusive. Other diameters can be used.

[0073] The via 110 has an inner surface 114 with two different bevels, and a change in bevel at the corner 124. The via 110 can have a single bevel from each of the first and second major surfaces 102, 104 to the waist 125, as Figure 2two ramps, or more complex shapes. One or more of the ramps can be perpendicular to the first major surface 102 and the second major surface 104, as shown. Figure 2

[0074] In Figure 4 and Figure 5 In the embodiment shown, the through-hole 110 has an inner surface 114 that tapers or narrows from a first diameter 132a at the first major surface 102 to a second diameter 132b at the second major surface 104. The through-hole 110 also includes a third diameter 132c within the second axial portion that is smaller than the first diameter 132a and larger than the second diameter 132b. Thus, the first diameter 132a is larger than the second diameter 132b and the third diameter 132c, and the third diameter 132c is larger than the second diameter 132b. This configuration is referred to herein as a fully filled tapered through-hole, or FTV. In such embodiments, the first diameter 132a is the maximum through-hole diameter Φ 最大 .

[0075] In Figure 6 and 7 In the embodiment shown, the through-hole 110 has an inner surface 114 that tapers or narrows from a first diameter 132a at the first major surface 102 to a second diameter 132b at the second major surface 104. The through-hole 110 also includes a third diameter 132c within the second axial portion that is smaller than the first diameter 132a and larger than the second diameter 132b. Thus, the first diameter 132a is larger than the second diameter 132b and the third diameter 132c, and the third diameter 132c is larger than the second diameter 132b. This configuration is referred to herein as a fully filled tapered through-hole, or FTV. In such embodiments, the first diameter 132a is the maximum through-hole diameter Φ

[0076] The through-hole 110 can have any suitable through-hole length 130, or axial length L. As non-limiting examples, the thickness of the substrate 100 (and the through-hole length 130) can be 150 pm, 180 pm, 240 pm, 300 pm, 360 pm, 420 pm, 480 pm, 500 pm, or any range between any two of these values, including the endpoints. In some embodiments, the thickness t and the through-hole length are from 150 pm to 500 pm, or from 200 pm to 360 pm.

[0077] ​The via 110 can have any suitable first diameter 132a, second diameter 132b, and third diameter 132c. By way of non-limiting example, these diameters can be 5 pm, 10 pm, 13 pm, 15 pm, 17 pm, 19 pm, 20 pm, 21 pm, 22 pm, 24 pm, 25 pm, 27 pm, 30 pm, or any range of any two of these values inclusive, as endpoints. In some embodiments, the via diameter can be greater than or equal to 1 pm and less than or equal to 30 pm, greater than or equal to 1 pm and less than or equal to 25 pm, greater than or equal to 1 pm and less than or equal to 19 pm, or greater than or equal to 1 pm and less than or equal to 17 pm. As will be described in greater detail below, in various embodiments, depending on the via shape and whether the metal connection is partially or fully bonded, the maximum diameter Φ 最大 less than or equal to 30 pm, less than or equal to 27 pm, less than or equal to 25 pm, less than or equal to 24 pm, less than or equal to 22 pm, less than or equal to 21 pm, less than or equal to 19 pm, even less than 17 pm, less than or equal to 15 pm, or even less than 13 pm, in order to reduce stress and prevent substrate cracking.

[0078] In some embodiments, the via 110 is a fully-filled, fully-bonded cylindrical via, and the maximum diameter Φ 最大 less than or equal to 30 pm, less than or equal to 27 pm, or less than or equal to 24 pm. In other embodiments, the via 110 is a fully-filled, partially-bonded cylindrical via, and the maximum diameter Φ 最大 less than or equal to 25 pm, less than or equal to 22 pm, or less than or equal to 19 pm. In other embodiments, the via 110 is a fully-filled, fully-bonded tapered via, and the maximum diameter Φ 最大 less than or equal to 19 pm, less than or equal to 17 pm, or even less than or equal to 15 pm. In other embodiments, the via 110 is a fully-filled, partially-bonded tapered via, and the maximum diameter Φ 最大 less than or equal to 17 pm, less than or equal to 15 pm, or less than or equal to 13 pm. In other embodiments, the via 110 is a fully-filled, fully-bonded necked via, and the maximum diameter Φ 最大 less than or equal to 27 pm, less than or equal to 24 pm, or less than or equal to 21 pm. In other embodiments, the via 110 is a fully-filled, partially-bonded necked via, and the maximum diameter Φ 最大 less than or equal to 25 pm, less than or equal to 22 pm, or less than or equal to 19 pm.

[0079] The axial lengths of the first, second, and third axial portions can have any suitable length. In various embodiments, lengths are selected that achieve a combination of low maximum principal stress and helium gas tightness. In some embodiments, the lengths of the first and third axial portions are independently selected from 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 15%, 20%, 25%, 30%, 35%, and 40% of the via length, or any range between any two of these values, inclusive. The length of the second axial portion is 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, or 98% of the via length, or any range between any two of these values, inclusive. The lengths of the first and third axial portions can be 2% to 40% of the via length, while the length of the second axial portion is 20% to 96% of the via length.

[0080] In various embodiments, the via is a high aspect ratio via, where the via length is 150 pm to 500 pm and the via diameter is 1 pm to 30 pm. As used herein, "aspect ratio" refers to the ratio of the average thickness of the glass substrate to the average diameter of the via. "High aspect ratio" refers to an aspect ratio greater than 3.

[0081] In various embodiments described herein, the via 110 has an axial length L and a maximum diameter Φ 最大 , and they satisfy the following equation:

[0082]

[0083] In some embodiments, the via 110 has an axial length L and a maximum diameter Φ 最大 , and they satisfy the following equation:

[0084]

[0085] While it is conventional to use the aspect ratio (L / Φ 最大 ) as the critical parameter, it has been found that the L / (Φ 最大 ) 1 / 2 ratio can be more relevant to the difficulty associated with through-via electroless and electroplating. For example, it can be demonstrated that two through-glass via geometries with the same aspect ratio can have different L / (Φ 最大 ) 1 / 2 values, and the L / (Φ 最大 ) 1 / 2Through-holes with higher diffusion values ​​are more difficult to metallize. Beyond theoretical considerations, the fact that copper ions need to diffuse to the center of the through-hole at a sufficiently fast rate compared to the depletion of copper ions due to reactions on the sidewalls caused by autocatalysis (in the absence of electroplating) or charge transfer reactions (in the case of electroplating) presents a challenge. Theoretical analysis of the system's diffusion reaction equations shows that the diffusion / reaction ratio is related to L / (Φ) 最大 ) 1 / 2 Proportional. Specifically, L / (Φ 最大 ) 1 / 2 The higher the value, the more difficult it is to metallize within the through-hole without creating defects due to copper depletion.

[0086] Manufacturing method

[0087] Through-holes in glass with a tapered shape can be manufactured by any suitable method. One method is to use a laser to form damage traces in the substrate 100, followed by etching. Exemplary methods are described in U.S. Patent No. 9,656,909 and U.S. Patent Application No. 62 / 588,615, which are incorporated herein by reference in their entirety. Another method is to modify the photosensitive glass with a laser, followed by etching.

[0088] Figure 8 A flowchart illustrating a process for metallizing a through-hole in glass is shown. In step 810, a helium-sealed adhesive layer is deposited on the inner surface of the through-hole, at least in the first and third axial portions. In a subsequent step 820, a metal connector is deposited within the through-hole such that the metal connector adheres to the helium-sealed adhesive layer, at least in the first and third axial portions.

[0089] A helium-tight adhesive layer can be deposited on the inner surfaces of the first and third axial portions (and optionally the second axial portion) by any suitable method. For example, a line-of-sight deposition method (e.g., sputtering) can be used, and the lengths of the first and third axial portions in the z-axis can be easily controlled by adjusting the deposition angle. The substrate can be rotated during deposition to ensure that the adhesive length remains constant around the entire perimeter of the inner surface of the via.

[0090] Many different methods can be used to apply a helium-tight adhesive layer to a glass surface as a film formed of metal, metal oxide, or metal nitride, such as sputtering, electron beam deposition, ion beam deposition, atomic layer deposition, chemical vapor deposition, and solution coating.

[0091] The metal connections can be deposited by any suitable means. One suitable method for depositing copper (and other metals) is to deposit a catalyst (e.g., Pd) on a helium gas-tight adhesion layer, followed by electroless deposition of copper, followed by electroplating of copper. In various embodiments, the electroplating process includes use of an electroplating bath including a metal salt, a supporting electrolyte, and an additive, and application of a current density greater than or equal to 1.5 mA / cm 2 and less than or equal to 5 mA / cm 2 , or greater than or equal to 1.5 mA / cm 2 and less than or equal to 2.5 mA / cm 2 The metal salt can be a salt of the metal that forms the metal connection, e.g., CuS04.

[0092] Another suitable method can include depositing the metal connection at the“bottom” of the via, and continuing to deposit the metal such that the metal material can continue to grow and fill the via until the metal material reaches the“top” of the via. This process is sometimes referred to as“bottom-up electrolytic plating.”

[0093] Other suitable methods for depositing the metal connection include filling the via with a metal paste, and sintering or chemical vapor deposition (CVD). Suitable methods for depositing copper are further described in U.S. Patent Publication US 2017-0287728 (see, e.g., paragraphs

[0004] -

[0005] ), which is incorporated by reference herein in its entirety.

[0094] Thermal Cycling

[0095] Glass and glass-ceramic substrates having filled vias are often subjected to thermal cycling. Such thermal cycling can occur during device operation, or during manufacturing steps after the via is filled. In some embodiments, for example, a glass substrate can be subjected to thermal cycling to perform annealing.

[0096] As noted above, there is a large mismatch between the coefficient of thermal expansion (CTE) of copper and other metals, and the CTE of many glasses and glass-ceramic materials. Due to the CTE mismatch, upon heating, the metal connection expands more rapidly than the surrounding glass or glass-ceramic substrate. Similarly, upon cooling, the metal connection contracts more rapidly than the surrounding substrate. This difference in expansion and contraction creates stress, which can lead to various failure mechanisms, such as delamination or cracking. These failure mechanisms can result in loss of hermeticity and other problems.

[0097] Delamination is a failure mechanism. Delamination occurs when the conductive metal (e.g., copper) detaches from the interior of the via. When there is weak bonding between the conductor and the substrate, stress caused by thermal cycling can lead to delamination. Delamination can lead to loss of hermeticity, as gases and liquids can pass through the substrate along the interface between the delaminated metal connection and the interior surface of the via.

[0098] Delamination can be reduced or eliminated by forming a sufficiently strong bond between the substrate and the metal connector. A helium hermetic adhesion layer disposed between the substrate and the metal connector, and on the interior surface of the via, can be used to form such a bond. As used herein, "adhesion layer" refers to any layer or surface treatment that results in a bond between the metal connector and the substrate that is sufficiently strong to withstand thermal cycling from 23 °C to 450 °C.

[0099] While delamination can be prevented by forming a strong bond between the metal connector and the substrate, such a strong bond prevents the metal connector from moving relative to the substrate during thermal cycling. As a result, thermal cycling causes stress in the substrate that leads to cracking and loss of hermeticity.

[0100] The two-dimensional (2D) plane strain solution to the elastic classical Lame problem for predicting the stress field in the center of the glass is as follows:

[0101]

[0102] where σ r and σ θ are the radial and hoop stresses, respectively, and ε T = (α f - α m ) ΔT is the mismatch strain due to thermal load ΔT. The material properties α, E, and v are the CTE, Young's modulus, and Poisson's ratio, respectively, and the subscripts f and m represent the via (fiber) and glass (matrix), respectively.

[0103] Failure can occur during both the heating and cooling portions of the thermal cycle. During heating, the maximum expansion mismatch is at the hottest temperature. The majority of the stress in the substrate is compressive at the higher temperatures because the metal connector expands more than the substrate. The hoop tensile stress in the glass that dominates during heating is around the metal connector and can cause radial cracking. It can propagate to the next via. During cooling, the maximum contraction mismatch is at the lowest temperature. The majority of the stress in the substrate is tensile at the lower temperatures because the metal connector contracts more than the substrate. The radial stress that dominates during cooling can cause cracking. The radial stress is tensile in the glass near the surface, which can cause the glass to crack circumferentially (C-cracks). For both heating and cooling, the presence of shear stress along the interface can induce interfacial failure through delamination.

[0104] As the cooling phase of the thermal cycle nears its end, the metal connector 150 shrinks more than the substrate 100 due to the difference in CTE (Cooling Force Expansion). Since the metal connector 150 adheres to the substrate 100, this shrinkage pulls on the substrate 100, placing it under tensile stress. Without sufficient degrees of freedom to release the force, this tensile stress will create microcracks in the substrate 100, potentially leading to a loss of airtightness.

[0105] The various embodiments described herein exhibit helium-airtightness and do not crack after thermal cycling. More specifically, in each embodiment, the article is free of cracks and has a density of less than 10 before and after heating to 450°C and cooling to 23°C. -5 atm*cc / s, or even less than 10 -8 Helium permeability atm*cc / s. In the various embodiments described herein, the maximum diameter Φ of the through-hole 110 is maintained. 最大 A thickness of 30 μm or less provides helium gas tightness while allowing the substrate and metal connectors to shrink at different rates without generating tensile stress sufficient to induce microcracks.

[0106] Modeling

[0107] use Figure 9 The geometry is modeled using copper conformally coated on every part of the inner surface of the via, except for a 75 μm axial length—37.5 μm on each side of the waist—where the via remains filled. The via length is 300 μm. The first and second diameters are each 50 μm. A diameter of 50 μm is maintained at a distance of 50 μm along the axial length from both surfaces. Starting 50 μm from each surface, the via tapers inward until a diameter of 20 μm is reached at waist 125, which is half the axial length. A 20 μm thick copper coating exists on both the first and second main surfaces. This modeling result is expected to extend to other via and metal connector shapes with cavities in the metal connector and a second axial portion with a loose bond between the metal connector and the substrate.

[0108] In one process flow used to manufacture the actual device, during the most severe thermal cycling, there is an adhered copper coating. Figure 9 The geometry. Afterwards, the copper overlay is removed, and further processing can occur. However... Figure 9 The geometry is related to the thermal cycle modeled here.

[0109] The modeling is based on theory from Ryu SK, Lu KH, Zhang X, Im JH, Ho PS, Huang R. Impact of near-surface thermal stresses on interfacial reliability of through-silicon vias for 3-D interconnects. IEEE Transactions on Device and Materials Reliability, March 2011; 11(1): 35- ("Ryu"). According to Ryu, when a via is placed in a wafer, there is an analytical solution for predicting the stress of the via and the wafer surface. However, there is no closed-form solution to predict the stress through the thickness. Therefore, modeling is needed. For the modeling, a single isolated hole in a finite plate is modeled. Two-dimensional axisymmetry is assumed, and a sufficiently small mesh size of ~0.5 μιη is used. ANSYS v. 19 structural modeling software is used to perform the modeling.

[0110] For the modeling, the glass is assumed to be elastic, and the properties of fused silica are as follows: E (Young's modulus) = 73 GPa; v (Poisson's ratio) = 0.17, and a (thermal expansion coefficient) = 0.55 ppm / °C. The copper is assumed to have elastic-perfectly plastic properties, and has a temperature-dependent yield stress. Figure 10A A graph 1000 is shown, which illustrates the stress-strain relationship of an elastic-perfectly plastic material. Figure 10B A graph 1010 is shown, which illustrates the temperature-dependent copper yield stress. The elastic properties of copper used for the modeling are: E (Young's modulus) = 121 GPa; v (Poisson's ratio) = 0.35, and a (thermal expansion coefficient) = 17 ppm / °C. It is also assumed that the system including the copper via and fused silica is in a stress-free state at 25 °C. The modeling calculates the stress after a thermal cycle from 25 °C to 400 °C and back down to 25 °C.

[0111] If the glass cracks, it will first crack where the first principal stress is the largest (i.e., the "maximum first principal stress"). Referring to Figure 9 , the modeling shows the highest first principal stress at two points. First, along line 190, a short distance from the interface between the helium hermetic adhesion layer 122 and the substrate 100, there is a high maximum principal stress on the surface of the substrate 100. This first point of high stress corresponds to the failure mechanism observed in the sample - microcracks in the surface.

[0112] Second, there is a maximum principal stress at point 192. This point is the principal stress component that induces crack initiation and propagation. Figure 11A plot of the modeled first maximum principal stress and maximum radial stress along line 190 is shown for different copper wall thicknesses. As shown Figure 11 , the maximum values of both the radial stress and the first maximum principal stress increase exponentially with temperature. For a coating thickness greater than or equal to 12 pm, the first maximum principal stress and the maximum radial stress intersect or exceed a threshold value (140 MPa for the first maximum principal stress and 80 MPa for the maximum radial stress) for the Figure 9 configurations shown.

[0113] Additional experiments examined the percentage of through vias with cracks for different copper coating thicknesses after wafer annealing to a maximum temperature of 400 °C. The coating thickness was measured at the first or second major surface, and groups were formed based on the integer of the coating thickness measurement. In other words, the group “8 pm” included coating thicknesses of 8.00 pm to 8.99 pm, the group “9 pm” included coating thicknesses of 9.00 pm to 9.99 pm, and so on. Based on the experimental data, cracking did not occur in the through vias until the coating thickness was greater than or equal to 12 pm. Based on the modeling and experimental data, the threshold stress for crack formation was determined to correspond to a maximum first principal stress of 140 MPa and a radial stress of 80 MPa. Therefore, for values below this stress threshold, no cracks were expected to occur.

[0114] Using the critical threshold of maximum principal stress of 140 MPa, modeling was used to determine the required crack-free through via diameter in a fully filled configuration (e.g., the configuration shown in Figures 2-7 . The same material inputs for the metallization conformal copper configuration shown in Figure 9 were used to model the fully filled through via configuration. For the tapered configuration, a taper ratio of 5:3 (maximum diameter: minimum diameter) was used.

[0115] To account for stress calculation variability related to the mesh size used in the model, a ±10% error was applied. Therefore, a lower limit of 126 MPa was used to determine the critical through via diameter required to eliminate cracks in a fully filled through via.

[0116] Figure 12 is a plot showing the predicted glass surface stress around a through via for a partially bonded, fully filled through via. For the Figure 2 and 6 configurations shown (FPV and FCV, respectively), the critical stress threshold was reached at a diameter less than or equal to 25 pm. However, Figure 4 the configuration shown (FTV) reached the critical stress threshold at a diameter less than or equal to 17 pm. Therefore, the FCV and FPV through via shape configurations were able to have the largest through via diameter tolerance to provide a partially bonded, crack-free, hermetic, fully filled through via.

[0117] Figure 13 is a plot showing the predicted glass surface stress around a fully bonded and fully filled via. Based on this modeling, Figure 3 the configuration (FPV) reached a critical stress threshold at a diameter less than or equal to 27 pm, Figure 7 the configuration (FCV) reached a critical stress threshold at a diameter less than or equal to 30 pm, and Figure 5 the configuration reached a critical stress threshold at a diameter less than or equal to 19 pm. The modeling results for the different via configurations and bonding parameters are summarized in Table 1.

[0118] Table 1:

[0119]

[0120]

[0121] As can be seen from the data presented in Table 1, the fully bonded via configuration can support a larger diameter than the partially bonded via configuration. Without being bound by theory, it is believed that in the fully bonded configuration there is a greater stress distribution throughout the thickness of the glass, as compared to the partially bonded configuration, in which the stress can be concentrated near the center and surface of the substrate. In addition, experiments performed demonstrated that the fully bonded configuration exhibited more protrusion of the metal connector from the surface of the via as compared to the partially bonded configuration.

[0122] CONCLUSION

[0123] As used herein, the phrase "consisting essentially of shall limit the scope of a claim to the elements specified and to "those that do not materially affect the basic and novel characteristic(s) of the claimed application.

[0124] Those skilled in the relevant art(s) will appreciate that various changes can be made to the embodiments described herein without deviating from the inventive concept. It is also clear to one skilled in the art that some of the expected benefits of the embodiments can be achieved through the selection of some features and not others. Accordingly, one skilled in the art will recognize that many modifications and adaptations are possible and indeed expected, and are part of the present disclosure. Thus, it is to be understood that the disclosure is not to be limited to the specifically recited combinations of components, articles, devices, and methods unless specific limitations are recited elsewhere in the specification. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. The features shown in the drawings are examples of the embodiments selected for illustration and are not necessarily drawn to scale. These drawing features are examples and are not intended to be limiting.

[0125] Unless otherwise stated, no aspect of the methods described herein is intended to be a requirement for the steps to be performed in a particular order. Accordingly, unless specifically stated otherwise, the methods described herein are not intended to be limited to the specific order of steps set forth.

Claims

1. A glass or glass-ceramic article comprising: a glass or glass-ceramic substrate [100] having a first major surface [102] and a second major surface [104] opposite the first major surface [102], and a through-hole [110] extending an axial length L through the substrate [100] in an axial direction from the first major surface [102] to the second major surface [104], the through-hole defining: an inner surface [114]; and a first axial portion [116], a third axial portion [120], and a second axial portion [118] disposed between the first axial portion [116] and the third axial portion [120] along the axial direction; a helium gas-tight adhesive layer [122] provided on the inner surface [114] in the first axial portion [116] and / or the third axial portion [120], wherein a helium gas-tight adhesion layer is not disposed on the inner surface in the second axial portion; and a metal connector [150] disposed within the through-hole [110], wherein the metal connector [150] is adhered to the helium gas-tight adhesion layer [122], wherein: the metal connector [150] completely fills the through-hole [110] within the axial length L of the through-hole [110]; The through hole [110] has a maximum diameter Φ less than or equal to 25 μm 最大 ; and Axial length L and maximum diameter Φ 最大 satisfies the equation:

2. The glass or glass-ceramic article of claim 1, wherein, the through-hole has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the third diameter is less than the first diameter and the second diameter.

3. The glass or glass-ceramic article of claim 1, wherein, the through-hole has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the first diameter is greater than the second diameter and the third diameter, and wherein the third diameter is greater than the second diameter.

4. The glass or glass-ceramic article of claim 3, wherein, Maximum diameter Φ 最大 less than or equal to 17 μm.

5. The glass or glass-ceramic article of claim 1, wherein, the through-hole has a first diameter at the first major surface, a second diameter at the second major surface, and a third diameter in the second axial portion, and wherein the first diameter is equal to the second diameter and the third diameter.

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