Etching method and plasma processing apparatus
By using a plasma treatment method containing carbon and fluorine gases, the problems of low mask selectivity and aperture shape differences during the etching process were solved, achieving uniformity and precision in high aspect ratio etching.
CN113745104BActive Publication Date: 2026-07-17TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2021-05-24
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies suffer from low mask selectivity and inconsistent opening shapes formed on the etched film when etching holes or trenches with high aspect ratios, leading to circuit defects.
Method used
A plasma treatment method using gases containing carbon and fluorine, particularly hydrofluorocarbon gases with unsaturated C bonds and CF3 groups, is used to etch the stacked films, thereby etching silicon oxide and silicon nitride films through the generated plasma etching.
Benefits of technology
The improved mask selectivity suppressed the differences in the shape of the openings in the etched film, ensuring the uniformity and precision of the etching.
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Figure CN113745104B_ABST
Abstract
The present invention provides an etching method, characterized by comprising the following steps: Step (A), preparing a substrate having a laminated film in which a first film and a second film are alternately laminated, and a mask on the laminated film; and Step (B), etching the laminated film by plasma of a processing gas containing a gas containing carbon and fluorine, the gas containing carbon and fluorine having an unsaturated bond of C and a CF3 group.
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