Substrate processing apparatus and substrate processing method

Abstract

The present application relates to a substrate processing apparatus and a substrate processing method. Provided is a technology that water-repels a substrate with a water-repellent agent, and suppresses collapse of a concave-convex pattern of the substrate and generation of particles caused by the water-repellent agent. The substrate processing method includes the following (A) to (E). (A) A substrate to which a processing liquid is attached is carried into the inside of a processing container. (B) A first organic solvent is supplied to the substrate after the carrying, and the processing liquid attached to the substrate is removed. (C) A water-repellent agent is supplied to the substrate from which the processing liquid is removed, and the substrate is water-repelled. (D) A second organic solvent is supplied to the water-repelled substrate. (E) The second organic solvent attached to the substrate is volatilized, and the substrate is dried.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Patent Document 1 describes a substrate processing apparatus comprising: a liquid processing tank for simultaneously liquid processing multiple substrates with a processing liquid; a drying processing tank for drying the liquid-processed substrates above the liquid processing tank; and a substrate conveying device for conveying substrates between the liquid processing tank and the drying processing tank. Multiple substrates are arranged vertically with gaps between them and immersed in a processing liquid such as a cleaning liquid or rinsing liquid stored in the liquid processing tank. They are then conveyed to the drying processing tank and dried using a drying fluid such as IPA (isopropyl alcohol) vapor.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2014-103149 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] One aspect of this disclosure provides the following technique: water-repellent agent is used to make the substrate water-repellent, thereby suppressing the collapse of the uneven pattern of the substrate and suppressing the generation of particles caused by the supply of the water-repellent agent.

[0008] Solution for solving the problem

[0009] One aspect of the substrate processing method disclosed herein includes the following (A) to (E): (A) transferring a substrate with a processing liquid attached to it into the interior of a processing container. (B) supplying a first organic solvent to the substrate after it has been transferred in, thereby removing the processing liquid attached to the substrate. (C) supplying a water-repellent agent to the substrate after the processing liquid has been removed, thereby making the substrate water-repellent. (D) supplying a second organic solvent to the water-repellent substrate. (E) causing the second organic solvent attached to the substrate to evaporate, thereby drying the substrate.

[0010] The effects of the invention

[0011] According to one aspect of this disclosure, water-repellent agent is used to make the substrate water-repellent, which can suppress the collapse of the uneven pattern of the substrate and also suppress the generation of particles caused by the water-repellent agent. Attached Figure Description

[0012] Figure 1 This diagram illustrates a substrate processing apparatus according to one embodiment.

[0013] Figure 2 This diagram illustrates an example of the reaction between TMSDMA, acting as a water-repellent agent, and silanol groups on the substrate surface.

[0014] Figure 3 A diagram illustrating an example of the reaction between TMSDMA as a water-repellent agent and water.

[0015] Figure 4 A diagram illustrating an example of the reaction between TMSDMA as a water-repellent agent and methanol.

[0016] Figure 5 A flowchart illustrating a substrate processing method according to one embodiment.

[0017] Figure 6 A flowchart illustrating a modified example of a substrate processing method.

[0018] Figure 7 This diagram illustrates the state of the substrate processing apparatus during liquid processing in a modified example.

[0019] Figure 8 This diagram illustrates the state of the substrate processing apparatus during drying in a modified example.

[0020] Explanation of reference numerals in the attached figures

[0021] 10. Substrate processing apparatus

[0022] 20. Handling Containers

[0023] 30. Maintaining section

[0024] 40 Liquid Supply Department

[0025] 50 Gas Supply Department

[0026] 90 Control Department

[0027] W substrate Detailed Implementation

[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be noted that the same or corresponding components are labeled with the same symbols in the various drawings, and sometimes the description is omitted.

[0029] First, refer to Figure 1 The substrate processing apparatus 10 according to one embodiment will be described. The substrate W includes, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate. A conductive film or an insulating film is formed on the surface of the semiconductor substrate or the glass substrate. Multiple films may be formed. The substrate W includes electronic circuits and other devices on its surface, and includes raised and recessed patterns (not shown).

[0030] Multiple processing solutions are pre-supplied to the surface of substrate W. For example, a chemical solution and a rinsing solution are supplied. The chemical solution is, for example, an acidic, alkaline, or neutral aqueous solution. The rinsing solution is, for example, pure water. Previously, when substrate W was drying, the surface texture sometimes collapsed due to the surface tension of the water remaining on the surface.

[0031] Therefore, in order to suppress the collapse of the raised and recessed patterns, a technique for making the surface of substrate W water-repellent was studied. Annealing was performed using an alkoxide-based silane coupling agent as the water-repellent agent, resulting in substrate W drying before achieving the water-repellent effect.

[0032] In this embodiment, a water-repellent agent that is effective even without drying the substrate W is used, for example, a water-repellent agent having Si-N bonds. As a water-repellent agent having Si-N bonds, the water-repellent agent shown in the following general formula (1) can be cited.

[0033]

[0034] In the above general formula (1), R 1 R 2 R 3 R 4 R 5 These are functional groups, such as alkyl groups or groups obtained by replacing at least a portion of the hydrogen in an alkyl group with fluorine.

[0035] As a specific example of the above general formula (1), we can give the following:

[0036] • (Trimethylsilyl)dimethylamine (TMSDMA)

[0037] • Nonafluorohexyldimethyl(dimethylamino)silane (NFHDMA)

[0038] · (N,N-Dimethylamino)triethylsilane

[0039] Butyldimethyl(dimethylamino)silane

[0040] • n-Octyldimethyl(dimethylamino)silane

[0041] wait.

[0042] It should be noted that, as a water repellent having Si-N bonds, water repellents other than those shown in the general formula (1) above can be used. For example, hexamethyldisilazane (1,1,1,3,3,3-Hexamethyldisilazane: HMDS) can be used.

[0043] like Figure 2 As shown, TMSDMA reacts with the silanol groups (Si-OH groups) on the surface of substrate W, making the surface of substrate W water-repellent. Figure 2 The reaction shown occurs in a liquid, therefore, a water-repellent effect can be obtained before the substrate W is dried. It should be noted that water-repellent agents with Si-N bonds, other than TMSDMA, also produce a similar effect. Figure 1 The reaction shown is the same as the reaction shown.

[0044] like Figure 3 As shown, TMSDMA reacts with water to produce organosilanol groups. These organosilanol groups then polymerize to form particles. It should be noted that hydrophobic agents with Si-N bonds, other than TMSDMA, also produce particles. Figure 3 The reaction shown is the same as the reaction shown.

[0045] As detailed below, in this embodiment, after the substrate W with water adhering to it is placed into the processing container 20 and before the water-repellent agent is supplied to the substrate W, a first organic solvent is supplied to the substrate W to remove the water adhering to it. Therefore, the generation of particles caused by the reaction between water and the water-repellent agent can be suppressed.

[0046] like Figure 1 As shown, the substrate processing apparatus 10 includes a processing container 20, a holding section 30, a liquid supply section 40, a gas supply section 50, and a control section 90. The processing container 20 holds a substrate W coated with a processing liquid such as water inside. The holding section 30 holds the substrate W inside the processing container 20. The liquid supply section 40 supplies liquid to the substrate W inside the processing container 20. The gas supply section 50 supplies gas to the interior of the processing container 20. The control section 90 controls the liquid supply section 40 and the gas supply section 50.

[0047] The processing container 20 has, for example, a cylindrical sidewall 21 and a bottom wall 22 that blocks the lower end of the sidewall 21. The cylindrical sidewall 21 is open at the top and has an inlet / outlet 23 for the substrate W at its upper end. The processing container 20 also has a cover 24 for opening and closing the inlet / outlet 23.

[0048] The cover 24 can move between a blocking position for blocking the inlet / outlet 23 and an open position for opening the inlet / outlet 23. The cover 24 opens the inlet / outlet 23 when the substrate W is being loaded or unloaded, and blocks the inlet / outlet 23 after the substrate W is loaded or unloaded and before it is unloaded.

[0049] The substrate processing apparatus 10 also includes a switching mechanism 25 that moves the cover 24 between a blocked position and an open position. This allows the cover 24 to move automatically. The switching mechanism 25 can also move the cover 24 horizontally (up / down or laterally) or rotate it.

[0050] The holding unit 30 receives the substrate W from the conveying device (not shown) and holds the substrate W from below. When the substrate processing apparatus 10 is a batch processing type that processes multiple substrates W simultaneously, the holding unit 30 holds multiple substrates W at the same time. For example, the holding unit 30 arranges multiple substrates W in a horizontal direction with gaps, and holds the multiple substrates W vertically upright.

[0051] The holding portion 30, for example, has multiple holding rods 31 that are parallel to each other. On each of the multiple holding rods 31, multiple slots are formed at open intervals along its length. The periphery of the substrate W is inserted into these slots. Each of the multiple substrates W is held at multiple points by the multiple holding rods 31.

[0052] It should be noted that the substrate processing apparatus 10 in this embodiment is a batch processing type, but it can also be a single-wafer type. The single-wafer type substrate processing apparatus 10 processes substrates one by one. When the substrate processing apparatus 10 is a single-wafer type, the holding part 30 holds the substrate W horizontally from below and the concave and convex patterns of the substrate W face upward.

[0053] When the substrate processing apparatus 10 is a batch processing type, the substrate processing apparatus 10 may also include a lifting mechanism 35 for raising and lowering the holding section 30. The holding section 30 receives the substrate W above the processing container 20 via a conveying device (not shown). At this time, a processing liquid such as water adheres to the substrate W.

[0054] The substrate W descends together with the holding part 30 and is transported into the interior of the processing container 20 through the inlet / outlet 23. After being dried inside the processing container 20, the substrate W rises together with the holding part 30 and is transferred to the conveying device above the processing container 20.

[0055] The liquid supply section 40 supplies liquid to the substrate W held in the holding section 30. The supplied liquid may be, for example, a first organic solvent L1, a second organic solvent L2, a third organic solvent L3, and a water-repellent agent R. In this embodiment, the first organic solvent L1 and the second organic solvent L2 are IPA, the third organic solvent L3 is PGMEA (propylene glycol monomethyl ether acetate), and the water-repellent agent R is TMSDMA. It should be noted that, as described later, the combination of L1 to L3 and R is not particularly limited.

[0056] The liquid supply unit 40 includes one or more nozzles 41 for spraying liquid onto the substrate W held in the holding unit 30. In this embodiment, the first organic solvent L1, the second organic solvent L2, the third organic solvent L3, and the water repellent R can be sprayed from the same nozzle 41, but they can also be sprayed from different nozzles 41. The nozzles 41 spray the liquid in a mist or a spray pattern.

[0057] Nozzle 41 is disposed inside the processing container 20 and above the substrate W. Inside the processing container 20, the substrate W stands vertically and is arranged in a row with gaps along the horizontal direction. (The distance from the column to the width of the substrate W is not specified in the original text.) Figure 1 On both sides of the left and right direction of the substrate W, along the length direction of the column ( Figure 1 Multiple nozzles 41 are arranged at open intervals in a direction perpendicular to the paper surface. The nozzles 41 spray liquid into the gaps between adjacent substrates W.

[0058] The liquid supply unit 40 also includes a liquid supply mechanism 42 for supplying liquid to the nozzle 41. The liquid supply mechanism 42 has a common line 43 and multiple individual lines 44-46. The common line 43 connects the confluence point of the multiple individual lines 44-46 to the nozzle 41. A mixer 47 for mixing multiple liquids supplied simultaneously can be provided midway through the common line 43.

[0059] A separate pipeline 44 supplies either a first organic solvent L1 or a second organic solvent L2 to nozzle 41. Midway through the separate pipeline 44, a switching valve V1 and a flow controller F1 are provided. If the switching valve V1 opens the flow path of the separate pipeline 44, the first organic solvent L1 or the second organic solvent L2 is supplied to the nozzle 41 via a common pipeline 43 and sprayed from the nozzle 41. Its flow rate is controlled by the flow controller F1. Conversely, if the switching valve V1 closes the flow path of the separate pipeline 44, the supply of the first organic solvent L1 or the second organic solvent L2 to the common pipeline 43 ceases.

[0060] A separate pipeline 45 supplies a third organic solvent L3 to nozzles 41. Midway through the separate pipeline 45, a switching valve V2 and a flow controller F2 are provided. If the switching valve V2 opens the flow path of the separate pipeline 45, the third organic solvent L3 is supplied to the nozzles 41 via a common pipeline 43 and sprayed from the nozzles 41. Its flow rate is controlled by the flow controller F2. Conversely, if the switching valve V2 closes the flow path of the separate pipeline 45, the supply of the third organic solvent L3 to the common pipeline 43 ceases.

[0061] A separate pipeline 46 supplies water-repellent agent R to nozzles 41. Midway through the separate pipeline 46, a switching valve V3 and a flow controller F3 are installed. If the switching valve V3 opens the flow path of the separate pipeline 46, the water-repellent agent R is supplied to the nozzles 41 via a common pipeline 43 and sprayed from the nozzles 41. Its flow rate is controlled by the flow controller F3. Conversely, if the switching valve V3 closes the flow path of the separate pipeline 46, the supply of water-repellent agent R to the common pipeline 43 ceases.

[0062] The gas supply unit 50 supplies gas to the interior of the processing container 20. The supplied gas is, for example, an inactive gas G1, or a mixture of inactive gas G1 and the vapor G2 of a second organic solvent L2. The second organic solvent L2 is, for example, IPA. The supplied gas can be preheated. This can promote the drying of the substrate W.

[0063] The gas supply unit 50 includes, for example, a nozzle 51 for injecting gas. The nozzle 51 is disposed inside the processing container 20 and above the substrate W. Inside the processing container 20, the substrate W is vertically erected and arranged in a row with gaps in the horizontal direction. Multiple nozzles 51 are arranged with gaps in the length direction of the row of substrate W on both sides of the row's width. The nozzles 51 are disposed above the nozzles 41 of the liquid supply unit 40.

[0064] The gas supply unit 50 also includes a gas supply mechanism 52 for supplying liquid to the nozzle 51. The gas supply mechanism 52 has a common pipeline 53 and multiple individual pipelines 54-55. The common pipeline 53 connects the confluence point of the multiple individual pipelines 54-55 to the nozzle 51. A heater 57 for heating the supplied gas can be installed midway through the common pipeline 53.

[0065] A separate pipeline 54 supplies inert gas G1 to nozzle 51. Midway through the separate pipeline 54, a switching valve V4 and a flow controller F4 are installed. If the switching valve V4 opens the flow path of the separate pipeline 54, inert gas G1 is supplied to nozzle 51 via a common pipeline 53 and ejected from nozzle 51. Its flow rate is controlled by the flow controller F4. Conversely, if the switching valve V4 closes the flow path of the separate pipeline 54, the supply of inert gas G1 to the common pipeline 53 ceases.

[0066] A separate pipeline 55 supplies vapor G2 of the second organic solvent L2 to nozzle 51. A switching valve V5 and a flow controller F5 are located midway through the separate pipeline 55. If the switching valve V5 opens the flow path of the separate pipeline 55, vapor G2 is supplied to nozzle 51 via a common pipeline 53 and injected from nozzle 51. Its flow rate is controlled by the flow controller F5. Conversely, if the switching valve V5 closes the flow path of the separate pipeline 55, the supply of vapor G2 to the common pipeline 53 ceases.

[0067] The substrate processing apparatus 10 includes a discharge mechanism 60 that discharges fluid from the interior of the processing container 20 to the outside. The discharge mechanism 60 includes, for example, a discharge line 61 extending from the processing container 20. A switching valve V6 and a flow controller F6 are provided midway along the discharge line 61.

[0068] If the on / off valve V6 opens the flow path of the discharge line 61, the fluid inside the processing container 20 is discharged. The flow rate is controlled by the flow controller F6. Conversely, if the on / off valve V6 closes the flow path of the discharge line 61, the discharge of fluid is stopped.

[0069] The fluid discharged by the discharge mechanism 60 includes liquid supplied by the liquid supply unit 40 and gas supplied by the gas supply unit 50. It should be noted that a discharge line 61 for liquid and a discharge line 61 for gas can be provided separately.

[0070] The discharge line 61 is connected, for example, to the bottom wall 22 of the processing container 20. A downward flow can be formed inside the processing container 20. The downward flow can suppress droplet scattering and prevent droplets from adhering to the lower surface of the cover 24.

[0071] The control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control the various processes executed in the board processing apparatus 10. The control unit 90 controls the operation of the board processing apparatus 10 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0072] Next, refer to Figure 5 A substrate processing method according to one embodiment will be described. The substrate processing method includes, for example, [missing information - likely related to a specific method or feature]. Figure 5 The steps S101 to S107 are shown. S101 to S107 are performed under the control of the control unit 90. It should be noted that all of S101 to S107 may not be performed, for example, S102 may not be performed.

[0073] First, the holding part 30 receives the substrate W coated with a treatment liquid such as water from a conveying device (not shown) above the processing container 20. Then, the lifting mechanism 35 lowers the substrate W together with the holding part 30, moving the substrate W into the interior of the processing container 20 (S101). Additionally, the switching mechanism 25 moves the cover 24 from the open position to the blocked position, blocking the inlet / outlet 23 of the processing container 20 (S101). The interior of the processing container 20 contains air that entered during the loading of the substrate W.

[0074] Next, the gas supply unit 50 supplies inactive gas G1 into the interior of the processing container 20 to purge the air contained inside the processing container 20 (S102). The air is discharged to the outside of the processing container 20 by the discharge mechanism 60. This process removes moisture contained in the air and inhibits the reaction between moisture and the water-repellent agent R.

[0075] The supply of inactive gas G1 based on the gas supply unit 50 and the discharge of fluid based on the discharge mechanism 60 can be continuously implemented during the supply of liquid to the substrate W and the drying of the substrate W. A downward flow can be formed inside the processing container 20 to suppress droplet scattering. The nozzle 51 of the gas supply unit 50 is disposed above the nozzle 41 of the liquid supply unit 40 to suppress droplet scattering from the nozzle 41.

[0076] Next, the liquid supply unit 40 supplies the first organic solvent L1 to the substrate W (S103). The first organic solvent L1 removes the water adhering to the substrate W. The first organic solvent L1 can be water-soluble or water-insoluble, but to improve the water replacement rate, it is preferably water-soluble, and more preferably highly water-soluble. As long as the first organic solvent L1 is water-soluble, it can efficiently replace the water that has entered into the recesses of the uneven pattern of the substrate W.

[0077] Non-water-soluble means, for example, that the amount that can be dissolved in 100g of water (the limit amount that can be dissolved in 100g of water) is more than 0g and less than 10g. Hereinafter, the amount that can be dissolved in 100g of water will also be referred to as "dissolution amount".

[0078] Based on solubility, water solubility can be divided into moderate water solubility and high water solubility. Moderate water solubility refers to a solubility of 10g or more but less than 30g in 100g of water. Specific examples of moderately water-soluble organic solvents include PGMEA, methyl acetate, and 2-butanone. The solubility of PGMEA is 19.8g, that of methyl acetate is 24.4g, and that of 2-butanone is 27.5g.

[0079] High water solubility means, for example, that the amount of water that can be dissolved in 100g of water exceeds 30g. In the case of high water solubility, there is no specific upper limit to the amount that can be dissolved in 100g of water. Specific examples of highly water-soluble organic solvents include IPA and acetone.

[0080] In this embodiment, the first organic solvent L1 is IPA. The first organic solvent L1 is blown onto the substrate W in a mist or spray manner. Compared with the case where the substrate W is immersed in the first organic solvent L1 accumulated inside the processing container 20, the amount of the first organic solvent L1 can be reduced.

[0081] Inside the processing container 20, substrates W are vertically erected and arranged in a row with gaps in the horizontal direction. Nozzles 41 spray the first organic solvent L1 into the gaps between the substrates W. At this time, the lifting mechanism 35 can raise and lower the substrates W together with the holding part 30. The relative raising and lowering of the substrates W and the nozzles 41 can efficiently supply the first organic solvent L1 throughout the vertical direction of the substrates W. It should be noted that, instead of raising and lowering the substrates W, the nozzles 41 can also be raised and lowered.

[0082] Next, the liquid supply unit 40 supplies the water-repellent agent R to the substrate W (S104). For example, a water-repellent agent having Si-N bonds can be used as the water-repellent agent R. The substrate W can be made water-repellent even without drying. In this embodiment, the water-repellent agent R is TMSDMA. The water-repellent agent R is blown onto the substrate W in a mist or spray manner. Compared to immersing the substrate W in the water-repellent agent R accumulated inside the processing container 20, the amount of water-repellent agent R used can be reduced.

[0083] Inside the processing container 20, substrates W are vertically erected and arranged in a row with gaps in the horizontal direction. Nozzles 41 spray water-repellent R into the gaps between the substrates W. At this time, the lifting mechanism 35 can raise and lower the substrates W together with the holding part 30. The relative raising and lowering of the substrates W and nozzles 41 allows for efficient supply of water-repellent R throughout the vertical direction of the substrates W. It should be noted that, instead of raising and lowering the substrates W, the nozzles 41 can also be raised and lowered.

[0084] When supplying the water-repellent agent R, a mixture of the water-repellent agent R and the first organic solvent L1 can be supplied. This reduces the amount of water-repellent agent R used. The content of water-repellent agent R in the mixture of water-repellent agent R and the first organic solvent L1 is, for example, 2% by mass or more and 50% by mass or less, preferably 2% by mass or more and 20% by mass or less, more preferably 2% by mass or more and 10% by mass or less.

[0085] Next, the liquid supply unit 40 supplies the second organic solvent L2 to the substrate W (S105). The step of supplying the second organic solvent L2 to the substrate W includes: removing the unreacted water-repellent agent R from the substrate W. The supply of water-repellent agent R is then stopped. In this embodiment, the second organic solvent L2 is IPA, but it is not particularly limited as long as it can dissolve the unreacted water-repellent agent R and has high volatility.

[0086] Next, the gas supply unit 50 supplies inactive gas G1 into the processing container 20, and the discharge mechanism 60 discharges the gas from inside the processing container, thereby causing the second organic solvent L2 adhering to the substrate W to evaporate and the substrate W to dry (S106). To promote drying, the inactive gas G1 may also be preheated. While the substrate W is drying, the liquid supply unit 40 stops supplying liquid to the substrate W.

[0087] When supplying inactive gas G1, a mixture of inactive gas G1 and vapor G2 of the second organic solvent L2 can be supplied. If the vapor G2 of the second organic solvent L2 adheres to the substrate W, it condenses. The heat of condensation can heat the substrate W, thereby promoting the drying of the substrate W.

[0088] Next, the switching mechanism 25 moves the cover 24 from the blocked position to the open position, opening the loading / unloading outlet 23 of the processing container 20 (S107). Additionally, the lifting mechanism 35 raises the substrate W together with the holding part 30, moving the substrate W outside the processing container 20 (S107). Afterwards, the holding part 30, above the processing container 20, transfers the substrate W to a conveying device (not shown).

[0089] Therefore, when alcohols are used as the first organic solvent L1 or the second organic solvent L2, since alcohols, like water, have OH groups, the second organic solvent L2 reacts with the water-repellent agent R.

[0090] For example, such as Figure 4 As shown, Si-OCH3 bonds are generated through the reaction of TMSDMA with methanol. The Si-OCH3 bond differs from... Figure 3 The Si-OH bonds shown do not undergo polymerization in the absence of water.

[0091] Therefore, alcohols, like water, have OH groups, but unlike water, they do not produce particles.

[0092] Therefore, alcohols can be used as the first organic solvent L1 or the second organic solvent L2. However, the first organic solvent L1 or the second organic solvent L2 sometimes contains trace amounts of water. As a result, tiny particles may sometimes be produced.

[0093] In recent years, the miniaturization of the embossed patterns on substrates has progressed, and it is believed that even tiny particles can sometimes cause problems.

[0094] Even when problems arise from tiny particles, a third organic solvent L3 that does not contain OH groups can be used in combination, as detailed later. The third organic solvent L3 can be, for example, a ketone, ester, or ether.

[0095] The third organic solvent L3 is preferably water-soluble, as described above. Specific examples of the third organic solvent L3 include acetone, PGMEA, methyl acetate, or 2-butanone. Among these, acetone is particularly preferred from the viewpoint of high water solubility.

[0096] Next, refer to Figure 6The substrate processing method of this modified example will be described. The substrate processing method of this modified example includes S101 to S107 and S111 to S112. S101 to S107 and S111 to S112 are performed under the control of the control unit 90. In S111 and S112, a third organic solvent L3 is supplied to the substrate W. It should be noted that all of S101 to S107 and S111 to S112 may be omitted; for example, S112 may be omitted. Hereinafter, the differences between this modified example and the above-described embodiment will be mainly described.

[0097] S111 as Figure 6 As shown, this is performed after S103 and before S104. In S103, the liquid supply unit 40 supplies the first organic solvent L1 to the substrate W. On the other hand, in S104, the liquid supply unit 40 supplies the water-repellent agent R to the substrate W.

[0098] In S111, the liquid supply unit 40 supplies a third organic solvent L3, which is different from the first organic solvent L1, to the substrate W to remove the first organic solvent L1 adhering to the substrate W. The first organic solvent L1 has OH groups, while the third organic solvent L3 does not have OH groups.

[0099] The first organic solvent L1 has OH groups, which are hydrophilic groups. Therefore, water adhering to the substrate W can be efficiently removed in S103. On the other hand, the third organic solvent L3 does not have OH groups and therefore does not react with the water-repellent agent R. Therefore, the generation of small particles can also be suppressed in S104.

[0100] In S104, the liquid supply section 40 supplies water-repellent agent R to the substrate W. When supplying water-repellent agent R, a mixture of water-repellent agent R and the third organic solvent L3 can be supplied. This reduces the amount of water-repellent agent R used. The content of water-repellent agent R in the mixture of water-repellent agent R and the third organic solvent L3 is, for example, 2% by mass or more and 50% by mass or less, preferably 2% by mass or more and 20% by mass or less, more preferably 2% by mass or more and 10% by mass or less.

[0101] S112 as Figure 6 As shown, this is performed after S104 and before S105. In S105, the liquid supply unit 40 supplies the second organic solvent L2 to the substrate W. The second organic solvent L2, like the first organic solvent L1, has OH groups.

[0102] In S112, the liquid supply section 40 supplies the third organic solvent L3 to the substrate W, removing the unreacted water-repellent agent R from the substrate W. As a result, in S105, the reaction between the second organic solvent L2, which has OH groups, and the water-repellent agent R can be suppressed, and the generation of tiny particles can also be suppressed.

[0103] In S105, the liquid supply unit 40 supplies the second organic solvent L2 to the substrate W, replacing the third organic solvent L3 adhering to the substrate W with the second organic solvent L2. The second organic solvent L2 has a lower boiling point than the third organic solvent L3 and has high volatility. As a result, in S106, the drying of the substrate W can be promoted.

[0104] Next, refer to Figure 7 and Figure 8 The substrate processing apparatus 10 of the modified example will be described below. Hereinafter, the differences between the substrate processing apparatus 10 of this modified example and the substrate processing apparatus 10 of the above embodiment will be described.

[0105] The processing container 20 has a liquid processing tank 26 that forms a liquid processing chamber R1 inside, supplying liquid to the substrate W. A nozzle 41 of the liquid supply unit 40 is disposed in the liquid processing chamber R1. The liquid processing tank 26 has, for example, an inner tank 26a forming the liquid processing chamber R1 inside, an outer tank 26b surrounding the upper end of the inner tank 26a, and a sealing groove 26c surrounding the upper end of the outer tank 26b. A discharge line 61 is connected to the bottom wall 22 of the inner tank 26a. The sealing groove 26c suppresses the intrusion of external gases by accumulating pure water or the like inside.

[0106] Additionally, the processing container 20 has a drying tank 27 with a drying chamber R2 formed inside for drying the substrate W. A nozzle 51 of the gas supply unit 50 is disposed in the drying chamber R2. The drying tank 27 is positioned above the liquid processing tank 26. The drying tank 27 includes, for example, a cylindrical sidewall 27a. The cylindrical sidewall 27a is open at the top, and has an inlet / outlet 23 for the substrate W at its upper end. The drying tank 27 also includes a cover 27b for opening and closing the inlet / outlet 23. The cover 27b is an upwardly convex hemispherical shape and is raised and lowered by a switching mechanism 25.

[0107] Additionally, the processing container 20 has a sleeve 28 between the liquid processing tank 26 and the drying tank 27. A baffle 29 is movably disposed inside the sleeve 28. The baffle 29 is positioned at the communication point connecting the liquid processing chamber R1 and the drying chamber R2 (see reference). Figure 7 ), and the blocking positions between the liquid treatment chamber R1 and the drying chamber R2 (refer to Figure 8 Move between ).

[0108] The substrate processing apparatus 10 also includes a switching mechanism 70 that moves the baffle 29 between a connected position and a blocked position. The switching mechanism 70 moves the baffle 29 horizontally. The switching mechanism 70 can also move the baffle 29 further vertically. The baffle 29 is horizontally disposed, and a frame-shaped seal 71 is maintained on its upper surface.

[0109] The substrate processing apparatus 10 includes a second discharge mechanism 80 that discharges gas from the inside of the drying tank 27 to the outside. The second discharge mechanism 80 includes, for example, a second discharge line 81 extending from the drying tank 27. A switching valve V7 and a flow controller F7 are provided midway through the second discharge line 81.

[0110] If the switching valve V7 opens the flow path of the second discharge line 81, the gas inside the drying tank 27 is discharged. The flow rate is controlled by the flow controller F7. Conversely, if the switching valve V7 closes the flow path of the second discharge line 81, the gas discharge stops.

[0111] The second discharge line 81 is connected to the lower part of the side wall 27a of, for example, the drying tank 27. A downward flow can be formed inside the drying tank 27. The downward flow can suppress droplet scattering and prevent droplets from adhering to the lower surface of the cover 24.

[0112] The substrate processing apparatus 10 of this modified example is implemented as follows: Figure 5 or Figure 6 The substrate processing method shown.

[0113] In step S101, the lifting mechanism 35 lowers the substrate W together with the holding part 30, moving the substrate W into the interior of the processing container 20. The substrate W is then transported to the liquid processing chamber R1 via the drying chamber R2. At this time, the baffle 29 is in the communicating position to avoid interference with the substrate W. In step S101, the switching mechanism 25 moves the cover 27b from the open position to the blocked position, blocking the loading / unloading outlet 23 of the processing container 20.

[0114] In step S102, the gas supply unit 50 supplies inactive gas G1 to the interior of the processing container 20, purging the air contained inside the processing container 20. The air is then discharged to the outside of the processing container 20 by the discharge mechanism 60. In step S102, the discharge mechanism 60 can be activated, while the second discharge mechanism 80 may or may not be activated.

[0115] The supply of inactive gas G1 based on the gas supply unit 50 and the discharge of fluid based on the discharge mechanism 60 are continuously performed in the liquid processing chamber R1, at least during the period when liquid is supplied to the substrate W. A downward flow can be formed inside the processing container 20, which can suppress droplet scattering.

[0116] In S103, the liquid supply unit 40 supplies the first organic solvent L1 to the substrate W. The first organic solvent L1 removes the water adhering to the substrate W. S111 can be performed after S103 and before S104.

[0117] In S104, the liquid supply unit 40 supplies the water-repellent agent R to the substrate W. S112 can be performed after S104 and before S105.

[0118] In step S105, the liquid supply unit 40 supplies the second organic solvent L2 to the substrate W. After S105 and before S106, the lifting mechanism 35 raises the substrate W together with the holding unit 30. The substrate W moves from the liquid processing chamber R1 to the drying chamber R2. Then, the switching mechanism 70 moves the baffle 29 from the connected position to the blocked position. In step S106, the drying of the substrate W can be promoted.

[0119] In step S106, the gas supply unit 50 supplies inactive gas G1 to the drying chamber R2, and the second discharge mechanism 80 discharges the gas from the drying chamber R2 to the outside, thereby causing the second organic solvent L2 adhering to the substrate W to evaporate and the substrate W to dry. To promote drying, the inactive gas G1 can be preheated. When the substrate W is drying, the liquid supply unit 40 stops supplying liquid to the substrate W.

[0120] When supplying inactive gas G1, a mixture of inactive gas G1 and vapor G2 of the second organic solvent L2 can be supplied. If the vapor G2 of the second organic solvent L2 adheres to the substrate W, it condenses. The heat of condensation heats the substrate W, thereby promoting the drying of the substrate W.

[0121] In step S107, the switching mechanism 25 moves the cover 27b from the blocked position to the open position, opening the loading / unloading outlet 23 of the processing container 20. Additionally, in step S107, the lifting mechanism 35 raises the substrate W together with the holding part 30, moving the substrate W outside the processing container 20. Afterwards, the holding part 30, above the processing container 20, transfers the substrate W to a conveying device (not shown).

[0122] The embodiments of the substrate processing method and substrate processing apparatus of this disclosure have been described above, but this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These, of course, fall within the protection scope of this disclosure.

Claims

1. A substrate processing method, comprising the following steps: The step of moving the substrate coated with the processing liquid into the interior of the processing container; The step of supplying a first organic solvent to the substrate after it has been moved in, and removing the processing liquid adhering to the substrate; The step of supplying a water-repellent agent to the substrate after the treatment liquid has been removed, thereby making the substrate water-repellent; The step of supplying a second organic solvent to the water-repellent substrate; and, The step of evaporating the second organic solvent adhering to the substrate and drying the substrate. The method includes, after supplying the first organic solvent to the substrate and before supplying the water-repellent agent to the substrate, the step of: supplying the substrate with a third organic solvent different from the first organic solvent to remove the first organic solvent adhering to the substrate. The first organic solvent has OH groups, while the third organic solvent does not. The method includes, after supplying the water-repellent agent to the substrate and before supplying the second organic solvent to the substrate, the step of supplying the third organic solvent to the substrate to remove unreacted water-repellent agent from the substrate. The second organic solvent has an OH group.

2. The substrate processing method according to claim 1, wherein, When the water-repellent agent is supplied to the substrate, a mixture of the water-repellent agent and the third organic solvent is supplied to the substrate.

3. The substrate processing method according to claim 1 or 2, wherein, The step of supplying the second organic solvent to the substrate includes: replacing the third organic solvent adhering to the substrate with the second organic solvent. The second organic solvent has a lower boiling point than the third organic solvent.

4. The substrate processing method according to claim 1 or 2, wherein, The first organic solvent and the second organic solvent are IPA. The third organic solvent is PGMEA.

5. The substrate processing method according to claim 1 or 2, wherein, The first organic solvent, the second organic solvent, and the water-repellent agent are blown onto the substrate in a mist or spray manner.

6. The substrate processing method according to claim 1 or 2, wherein, The water-repellent agent has Si-N bonds.

7. The substrate processing method according to claim 1 or 2, wherein, The treatment solution contains water.

8. A substrate processing apparatus comprising: A processing container into which the substrate is coated with a processing liquid is placed; A holding section that holds the substrate inside the processing container; A liquid supply unit that supplies liquid to the substrate inside the processing container; A gas supply unit supplies gas to the interior of the processing container; and, A control unit, which controls the liquid supply unit and the gas supply unit, The control unit controls the liquid supply unit and the gas supply unit to implement the substrate processing method according to any one of claims 1 to 7.

9. The substrate processing apparatus according to claim 8, wherein, After the substrate is moved into the processing container and before the first organic solvent is supplied to the substrate, the control unit supplies an inactive gas into the processing container.

10. The substrate processing apparatus according to claim 8 or 9, further comprising a discharge mechanism that discharges fluid from the interior of the processing container to the exterior. During the supply of the first organic solvent, the water-repellent agent, and the second organic solvent to the substrate, the control unit activates the discharge mechanism.

11. The substrate processing apparatus according to claim 8 or 9, wherein, The liquid supply unit includes one or more nozzles that spray the liquid in a mist or spray pattern. The first organic solvent, the second organic solvent, and the water repellent are blown onto the substrate in a mist or spray manner.

12. The substrate processing apparatus according to claim 8 or 9, wherein, The processing container includes: a liquid processing tank that forms a liquid processing chamber inside for supplying the liquid to the substrate; and a drying tank that forms a drying chamber inside for drying the substrate. When drying the substrate, the system further includes a baffle for blocking the drying chamber from the liquid treatment chamber.

13. The substrate processing apparatus according to claim 8 or 9, wherein, The holding section holds multiple substrates simultaneously.

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