Apparatus for automatic calibration of substrate transfer robots

Abstract

A robot calibration system includes a calibration fixture configured to be mounted on a substrate processing chamber. The calibration fixture includes at least one camera configured to capture an image including an outer edge of a test substrate and an edge ring surrounding the test substrate. A controller is configured to receive the captured image, analyze the captured image to measure a distance between the outer edge of the test substrate and the edge ring, calculate a center of the test substrate based on the measured distance, and calibrate a robot configured to transfer a substrate to and from the substrate processing chamber based on the calculated center of the test substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of U.S. Provisional Application No. 62 / 813,371, filed on March 4, 2019. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to systems and methods for calibrating a robot in a substrate processing system. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] The substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and / or other etching, deposition, or cleaning processes. The substrate can be arranged on a substrate support in a processing chamber of the substrate processing system, such as a pedestal, an electrostatic chuck (ESC), etc. During etching, a gas mixture including one or more precursors can be introduced into the processing chamber, and a plasma can be used to induce a chemical reaction. Summary of the invention

[0006] A robot calibration system includes a calibration fixture configured to be mounted on a substrate processing chamber. The calibration fixture includes at least one camera configured to capture an image including an outer edge of a test substrate and an edge ring surrounding the test substrate. A controller is configured to receive the captured image, analyze the captured image to measure a distance between the outer edge of the test substrate and the edge ring, calculate a center of the test substrate based on the measured distance, and calibrate a robot configured to transfer a substrate to and from the substrate processing chamber based on the calculated center of the test substrate.

[0007] In other features, the at least one camera corresponds to three cameras. The robot calibration system includes a seal compressed between the calibration fixture and the substrate processing chamber, and the controller is configured to evacuate the substrate processing chamber to a vacuum when the calibration fixture is mounted on the substrate processing chamber. The controller is configured to control the at least one camera to capture the image when the substrate processing chamber is under vacuum.

[0008] In other features, the controller is configured to determine a width of a pixel in a field of view of the at least one camera and to measure the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixel. The test substrate includes at least one reference mark in the field of view of the at least one camera, the at least one reference mark having a known size, and the controller is configured to determine the width of the pixel based on the known size. The at least one reference mark is a square, and the known size is the width of the square.

[0009] In other features, the test substrate includes a reference line aligned with a radius of the test substrate, and the controller is configured to measure the distance between the outer edge of the test substrate and the edge ring at a position corresponding to the reference line. The controller is configured to calculate a correction based on the calculated center of the test substrate and update the coordinates of the manipulator based on the correction. The controller is configured to calculate the correction based on the calculated offset between the center of the test substrate and the center of the edge ring. The manipulator is corrected by updating a plurality of coordinates of the manipulator.

[0010] A method for calibrating a robot configured to transfer substrates to and from a substrate processing chamber having a calibration fixture mounted thereon, the calibration fixture having at least one camera, comprises: capturing an image with the at least one camera, the image comprising an outer edge of a test substrate and an edge ring surrounding the test substrate. The method further comprises: analyzing the captured image to measure a distance between the outer edge of the test substrate and the edge ring; calculating a center of the test substrate based on the measured distance; and calibrating the robot configured to transfer the substrate to and from the substrate processing chamber based on the calculated center of the test substrate.

[0011] In other features, the at least one camera corresponds to three cameras. The method also includes evacuating the substrate processing chamber to a vacuum. The method also includes controlling the at least one camera to capture the image while the substrate processing chamber is in a vacuum.

[0012] In other features, the method further includes determining a width of a pixel in a field of view of the at least one camera, and measuring the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixel. The test substrate includes at least one reference mark located in the field of view of the at least one camera, the at least one reference mark having a known size, and the width of the pixel is determined based on the known size. The at least one reference mark is a square, and the known size is the width of the square.

[0013] In other features, the test substrate includes a reference line aligned with a radius of the test substrate, and wherein the distance between the outer edge of the test substrate and the edge ring is measured at a location corresponding to the reference line. The method also includes calculating a correction based on the calculated center of the test substrate, and calibrating the robot based on the correction. The method also includes calculating the correction based on an offset between the calculated center of the test substrate and the center of the edge ring.

[0014] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0016] Figure 1 is a functional block diagram of an exemplary substrate processing system according to the present disclosure;

[0017] Figure 2A , 2B , 2C and 2D show exemplary calibration apparatus and manipulator calibration systems according to the present disclosure;

[0018] Figure 3 Steps of an exemplary method for calibrating a manipulator are shown according to the present disclosure; and

[0019] Figure 4A , 4B , 4C and 4D show diagrams of exemplary correction devices according to the present disclosure.

[0020] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0021] In a substrate handling system, a robot / handler (e.g., a vacuum transfer module, or VTM, robot) may be used to transfer a substrate to and from a substrate support within a processing chamber. Certain substrate handling systems may implement a dynamic alignment system to align a substrate on a substrate support using a robot. The substrate is aligned on a pedestal so that a robot or other tool can be used to more accurately grasp and / or transfer the substrate (e.g., to a processing unit). Notches formed in the outer edge of the substrate may be used to achieve substrate alignment. Various types of substrate aligners may be used to detect the position of the notch as the substrate rotates. For example, a sensor may detect the notch as the substrate is slowly rotated using a chuck. The notch position and substrate offset are calculated based on the detected notch and provided to the robot.

[0022] The robot may be further configured to transfer the edge ring to and from the substrate support. The robot may be controlled according to predetermined calibration data to center the edge ring on the substrate support. Accurate placement of the edge ring on the substrate support may be difficult. For example, the desired position of the edge ring may be a centered position relative to the substrate support. In some examples, the robot may be configured to transfer the edge ring to a predetermined known centered position relative to the substrate support. However, placement of components of the substrate support, maintenance within the processing chamber, etc. may cause the center position of the substrate support to change.

[0023] Therefore, the robot must be calibrated periodically to achieve accurate placement of transferred substrates, edge rings, and / or other components of the substrate processing chamber. Conventional robot calibration methods may be prone to human error and system and / or process variations, such as vacuum drift.

[0024] According to the robot correction system and method of the present disclosure, a robot correction device is provided, which is configured to measure the distance between a substrate (e.g., a test substrate) disposed on a substrate support and an edge ring, and to calibrate the robot accordingly. For example, the robot correction device may include three or more imaging devices (e.g., cameras) that are configured to measure the distance from the edge of the test substrate to the edge (e.g., the inner edge) of the edge ring. In one example, the robot correction device includes three cameras installed in a triangular arrangement. The test substrate may include reference marks to assist in calculating the position of the test substrate relative to the edge ring. Based on the calculation of the position of the test substrate relative to the edge ring, the system is configured to calculate adjustment information and control the robot to retrieve and replace the test substrate. The retrieval and replacement operations may be repeated iteratively until the test substrate is in the desired position and the robot calibration is completed.

[0025] Reference now Figure 1, an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 can be used to perform etching using RF plasma and / or to perform other suitable substrate processing. The substrate processing system 100 includes a processing chamber 102, which surrounds the other components of the substrate processing system 100 and contains the RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is arranged on the substrate support 106. Although a specific substrate processing system 100 and chamber 102 are shown as examples, the principles of the present disclosure can be applied to other types of substrate processing systems and chambers, such as substrate processing systems that generate plasma in situ, substrate processing systems that implement remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes), and the like.

[0026] By way of example only, the upper electrode 104 may include a gas distribution device, such as a showerhead 109, which introduces and distributes the process gas. The showerhead 109 may include a stem portion including one end configured to receive the process gas. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a position spaced apart from the top surface of the processing chamber 102. The substrate-facing surface or faceplate of the base portion of the showerhead 109 includes a plurality of holes for allowing the process gas or purge gas to flow through. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another manner.

[0027] The substrate support 106 includes a conductive substrate 110 that serves as a lower electrode. The substrate 110 supports a ceramic layer 112. In some examples, the ceramic layer 112 may include a heating layer, such as a ceramic multi-zone heating plate. A thermal resistance layer 114 (e.g., a bonding layer) may be disposed between the ceramic layer 112 and the substrate 110. The substrate 110 may include one or more coolant channels 116 for flowing a coolant through the substrate 110.

[0028] The RF generation system 120 generates an RF voltage and outputs the RF voltage to one of the upper electrode 104 and the lower electrode (e.g., the substrate 110 of the substrate support 106). The other of the upper electrode 104 and the substrate 110 can be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 can include an RF voltage generator 122 that generates an RF voltage that is fed to the upper electrode 104 or the substrate 110 by a matching and distribution network 124. In other examples, the plasma can be generated inductively or remotely. Although the RF generation system 120 is shown to correspond to a capacitively coupled plasma (CCP) system for illustrative purposes, the principles of the present disclosure can also be implemented in other suitable systems, such as, by way of example only, in a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, etc.

[0029] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ... and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source provides one or more precursors and mixtures thereof. The gas source can also supply purge gas. Vaporized precursors can also be used. The gas source 132 is connected to the manifold 140 through valves 134-1, 134-2, ... and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ... and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is supplied to the processing chamber 102. By way of example only, the output of the manifold 140 is supplied to the showerhead 109.

[0030] The temperature controller 142 can be connected to a plurality of heating elements 144, such as thermal control elements (TCEs) disposed in the ceramic layer 112. For example, the heating elements 144 can include, but are not limited to, large heating elements corresponding to individual zones in a multi-zone heating plate and / or an array of micro-heating elements disposed across multiple zones of the multi-zone heating plate. The temperature controller 142 can be used to control the plurality of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108.

[0031] The temperature controller 142 may be in communication with the coolant assembly 146 to control the flow of coolant through the channel 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the channel 116 to cool the substrate support 106.

[0032] The valve 150 and the pump 152 may be used to evacuate the reactants from the process chamber 102. The system controller 160 may be used to control the components of the substrate processing system 100. The robot 170 may be used to transport substrates to and remove substrates from the substrate support 106. For example, the robot 170 may transfer substrates between the substrate support 106 and the load lock 172. Although the temperature controller 142 is shown as a separate controller, the temperature controller 142 may be implemented within the system controller 160. In some examples, a protective seal 176 may be provided around the outer periphery of the bonding layer 114 between the ceramic layer 112 and the substrate 110.

[0033] The substrate support 106 includes an edge ring 180. The edge ring 180 is movable relative to the substrate support 106 (e.g., movable up and down in a vertical direction). For example, the edge ring 180 may be controlled by an actuator and lift pins in response to the system controller 160. In some examples, the system controller 160 and the robot 170 may be further configured to retrieve and replace the edge ring 180.

[0034] The system controller 160 according to the present invention is configured to perform calibration of the robot 170, as described in more detail below. For example, the processing chamber 102 can include a removable cover 184. The cover 184 and the showerhead 109 can be removed separately. In some examples, the showerhead 109 or other upper electrode and gas distribution device can be integrated into the cover 184 so that when the cover 184 is removed, the showerhead 109 is also removed from the processing chamber 102. During calibration of the robot 170, a calibration apparatus (not shown) including an imaging device (e.g., a camera) is placed in the processing chamber 102. Figure 1 ; described in more detail below) is mounted on the processing chamber 102. The imaging device is configured to measure the distance between the substrate 108 (eg, a test substrate) and the edge ring 180 and calibrate the robot 170 accordingly.

[0035] Now refer to Figure 2A , 2B and 2C and continue to refer to Figure 1 , an exemplary calibration apparatus 200 according to the present disclosure includes a plurality of imaging devices, such as cameras 202. For example, each of the cameras 202 may correspond to a high-resolution charge coupled device (or CCD), a camera array. In this example, the calibration apparatus 200 includes three cameras 202 arranged 120 degrees apart, such as Figure 2B As shown in the floor plan.

[0036] The calibration fixture 200 is configured to be mounted on the processing chamber 204 in place of the cover 184 to perform calibration of the robot 170. The calibration fixture 200 may seal the processing chamber 204 using a seal (e.g., an O-ring) 206. The processing chamber 204 may be evacuated to a vacuum or other desired pressure for calibration. For example, the processing chamber 204 is evacuated to a vacuum pressure consistent with the pressure in the processing chamber 204 during processing of the substrate therein. Therefore, measurements for performing calibration are taken when the processing chamber 204 is under vacuum, and there are any structural deviations (e.g., vacuum deflections of various components and surfaces within the processing chamber 204) caused by the vacuum pressure. In this way, calibration of the robot 170 according to the present disclosure more accurately corresponds to the state of the processing chamber 204 during the actual transfer of substrates to and from the processing chamber 204 for processing.

[0037] The cameras 202 are each positioned to capture an image of the outer edge of the test substrate 208 and the inner edge of the edge ring 212 in a respective camera field of view (FOV) 216. By way of example only, the FOV 216 of each of the cameras 202 is a rectangle of 18×22 mm. The captured images are then analyzed (e.g., by the system controller 160) to determine the distance between the test substrate 208 and the edge of the edge ring 212 in each image. The test substrate 208 may include the same material (e.g., silicon) as the substrate to be processed in the process chamber 204. Thus, the properties, weight, surface friction, etc. of the test substrate 208 under vacuum are consistent with those of a typical substrate to be processed in the process chamber 204. Although shown outside of the calibration fixture 200 and the cameras 202, in some examples the system controller 160 and / or specialized functional components of the system controller 160 may be integrated into one or more of the cameras 202, the calibration fixture 200, etc.

[0038] In some examples, the test substrate 208 may include one or more reference marks 220 (e.g., lines aligned with radii of the test substrate 208) to assist in the analysis performed by the system controller 160. The test substrate 208 may also include notches 224 for determining the alignment / positioning of the test substrate 208 using a suitable substrate alignment system.

[0039] The calibration fixture 200 may also include one or more measuring devices 228 and 232 for measuring the distance between the calibration fixture 200 and the test substrate 208 (and / or the upper surface of the substrate support 236) and the edge ring 212, respectively. For example, the measuring devices 228 and 232 may implement a laser transmission and sensor system. The system controller 160 may adjust the measurements performed for calibration of the robot 170 to account for changes in the height, tilt, etc. of the substrate support 236 and / or the edge ring 212. In some examples, the calibration fixture 200 may include a handle 240 to assist in installing and removing the calibration fixture 200.

[0040] exist Figure 2C , a test substrate 208 is shown in a non-central position relative to the edge ring 212. The cameras 202 capture images in respective FOVs 216, and the system controller 160 analyzes the images to determine the distances d1, d2, and d3 between respective points on the periphery of the test substrate 208 and the edge ring 212. In one example, the system controller 160 determines the coordinates (e.g., x, y coordinates) of the respective points on the periphery of the test substrate 208. For example, if the cameras 202 are set at known fixed positions in the calibration fixture 200, the respective FOVs 216 of the cameras 202 correspond to known portions of the x, y coordinate system. In other words, the distances d1, d2, and d3 are measured, and thus the corresponding coordinates of the three points on the periphery of the test substrate 208 can be easily determined. The system controller 160 can then calculate the center 244 (e.g., x, y coordinates) of the circle corresponding to the test substrate 208 based on the distances d1, d2, and d3 and the coordinates of the respective points. For example, the coordinates x, y of the center 244 are calculated according to (x, y) = f(d1, d2, d3), where f(d1, d2, d3) corresponds to any function that calculates the center of a circle using three known points on the circle.

[0041] The center 248 of the edge ring 212 may be known (and / or calculated in a similar manner as the center 244 of the test substrate 208). The system controller 160 calculates the correction dR, dT based on the difference between the coordinates x, y of the center 244 of the test substrate 208 and the center 248 of the edge ring 212. For example, the correction dR, dT may be calculated according to (dR, dT) = f(x, y, R, T), where R, T corresponds to the target center position in the robot coordinate system. In other words, the system controller 160 associates the difference between the coordinates x, y of the center 244 of the test substrate and the center 248 of the edge ring 212 with the correction dR, dT to be applied to the target center position R, T of the robot 170. The system controller 160 provides the corrected R, T coordinates to the robot 170. The robot 170 may then retrieve the test substrate 208 and use the corrected R, T coordinates to place the test substrate 208 back on the substrate support. The determination of the center 244 of the test substrate 208 , the correction of the R, T coordinates, and the retrieval and replacement of the test substrate 208 may be repeated until the center 244 of the test substrate 208 matches the center 248 of the edge ring 212 .

[0042] In examples where the test substrate 208 includes reference marks 220, the system controller 160 is configured to analyze the images captured within the various FOVs 216 to compensate for mechanical tolerances associated with the relative positioning of the calibration fixture 200, the camera 202, the edge ring 212, etc. Exemplary reference marks 220 include reference lines 252 and reference squares 256, such as Figure 2D 2. Reference line 252 corresponds to a line on each radius of test substrate 208. Therefore, reference line 252 intersects center 244 of test substrate 208. System controller 160 analyzes the captured image to identify reference line 252 and measures a corresponding distance d from an end point of reference line 252 at the edge of test substrate 208 to edge ring 212. The system controller calculates (e.g., in an x, y coordinate system) center 244 of test substrate 208 based on the identified reference line 252 position and the measured distances d1, d2, and d3.

[0043] Reference squares 256 are provided to calibrate the pixel size of cameras 202 within their respective FOVs 216. For example, reference squares 256 have known widths (e.g., 1×1 mm, 2×2 mm, etc.). As shown, reference squares 256 include a 1×1 mm square and a 2×2 mm square. In other examples, more than two reference squares 256 may be provided. Furthermore, shapes other than reference squares 256 may be used.

[0044] The system controller 160 analyzes the captured image to determine the number of pixels in the width of each reference square 256. Since the size of the reference square 256 is known, the width of a single pixel can be determined accordingly. For example, if a 1×1 mm reference square contains 116.46 pixels, the width of one pixel can be calculated as 1,000 / 116.46 or 8.587 microns. Similarly, if a 2×2 mm reference square contains 234.313 pixels, the width of one pixel can be calculated as 2,000 / 234.313 or 8.536 microns. The distances d1, d2, and d3 can then be accurately measured based on the calculated width of each pixel.

[0045] Now refer to Figure 3, an exemplary method 300 for calibrating a robot for a substrate processing system begins at 304. At 308, a calibration fixture is mounted on a processing chamber. For example, the calibration fixture includes one or more cameras configured to capture images of a region of the processing chamber including an edge of a test substrate and an edge ring. At 312, the test substrate is transferred to a substrate support in the processing chamber using the robot. At 316, the processing chamber is evacuated to a vacuum pressure. At 320, the calibration fixture (e.g., in response to a controller, such as the system controller 160) captures one or more images of an edge of the test substrate and an adjacent edge of the edge ring. By way of example only, the calibration fixture captures three images using respective cameras.

[0046] At 324, the method 300 (e.g., using the system controller 160) analyzes the captured image to determine the distance between the edge of the test substrate and the edge ring. At 328, the method 300 (e.g., using the system controller 160) determines the center of the test substrate based on the determined distance. For example, the method 300 determines the coordinates of three points on the edge of the test substrate (e.g., in the xy plane) based on the determined distance and calculates the center of the test substrate accordingly. At 332, the method 300 (e.g., the system controller 160) determines whether the calculated center of the test substrate matches the center of the edge ring. If yes, the method 300 determines that the calibration of the robot is complete and ends at 336. If no, the method 300 continues to 340.

[0047] At 340, the method 300 (e.g., using the system controller 160) determines a correction amount dR, dT to correct the R, T coordinates of the robot corresponding to the nominal center point. For example, the method 300 determines the correction amount dR, dT based on the calculated difference between the center of the test substrate and the center of the edge ring. At 344, the method 300 updates the R, T coordinates of the robot according to the determined correction amount. At 348, the method 300 (e.g., the system controller 160) controls the robot to retrieve and place the test substrate using the corrected R, T coordinates. Next, the method 300 continues to 320 to repeat steps 320 to 332 until the correction is complete (i.e., until the calculated center of the test substrate matches the center of the edge ring).

[0048] Now refer to Figure 4A , 4B 4C and 4D show diagrams of an exemplary correction device 400 according to the present disclosure. Figure 4D, a calibration fixture 400 mounted on an exemplary processing chamber 404 is shown. The calibration fixture 400 includes a bottom cover plate 408, which is configured to be mounted on the upper end of the processing chamber 404. For example, the cover plate 408 may include bolt holes, which are configured to align with various holes in the processing chamber 404 and accommodate mounting bolts. The cover plate 408 may include a groove 416, which is configured to compress and accommodate an annular seal (such as an O-ring) between the cover plate 408 and the processing chamber 404. The bottom surface of the cover plate 408 includes an opening 420 corresponding to a corresponding one of the cameras 424. The camera 424 is disposed between the bottom cover plate 408 and the upper plate 428 of the calibration fixture 400.

[0049] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0050] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0051] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0052] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0053] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0054] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0055] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A robot calibration system, comprising: a calibration fixture configured to be mounted on a substrate processing chamber, wherein the calibration fixture comprises at least one camera configured to capture an image comprising an outer edge of a test substrate and an edge ring surrounding the test substrate; and a controller configured to receive the captured image, analyze the captured image to measure a distance between the outer edge of the test substrate and the edge ring, calculate a center of the test substrate based on the measured distance, and calibrate a robot configured to transfer substrates to and from the substrate processing chamber based on the calculated center of the test substrate. 2 . The robot correction system according to claim 1 , wherein the at least one camera corresponds to three cameras.

3. A robot correction system according to claim 1, wherein the robot correction system includes a seal compressed between the correction device and the substrate processing chamber, and wherein the controller is configured to evacuate the substrate processing chamber to vacuum when the correction device is installed on the substrate processing chamber. 4 . The robot correction system of claim 3 , wherein the controller is configured to control the at least one camera to capture the image when the substrate processing chamber is under vacuum.

5. The robot correction system of claim 1 , wherein the controller is configured to determine a width of a pixel in a field of view of the at least one camera, and to measure the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixel.

6. The robot correction system of claim 5, wherein the test substrate includes at least one reference mark located in the field of view of the at least one camera, wherein the at least one reference mark has a known size, and wherein the controller is configured to determine the width of the pixel based on the known size.

7. The robot calibration system of claim 6, wherein the at least one reference mark is a square and the known dimension is the width of the square.

8. The robot correction system of claim 1 , wherein the test substrate includes a reference line aligned with a radius of the test substrate, and wherein the controller is configured to measure the distance between the outer edge of the test substrate and the edge ring at a position corresponding to the reference line. 9 . The robot correction system according to claim 1 , wherein the controller is configured to calculate a correction amount based on the calculated center of the test substrate, and to correct the robot based on the correction amount. 10 . The robot correction system of claim 9 , wherein the controller is configured to calculate the correction amount based on a calculated offset between a center of the test substrate and a center of the edge ring.

11. The robot calibration system according to claim 1, wherein the robot is calibrated by updating a plurality of coordinates of the robot.

12. A method for calibrating a robot, the robot being configured to transfer substrates to and from a substrate processing chamber, the substrate processing chamber having a calibration fixture mounted thereon, the calibration fixture having at least one camera, the method comprising: capturing an image with the at least one camera, the image comprising an outer edge of a test substrate and an edge ring surrounding the test substrate; analyzing the captured image to measure a distance between the outer edge of the test substrate and the edge ring; calculating a center of the test substrate based on the measured distance; as well as The robot is calibrated based on the calculated center of the test substrate. The method of claim 12 , wherein the at least one camera corresponds to three cameras.

14. The method of claim 12, further comprising evacuating the substrate processing chamber to a vacuum.

15. The method of claim 14, further comprising controlling the at least one camera to capture the image while the substrate processing chamber is under vacuum.

16. The method of claim 12, further comprising determining a width of a pixel in a field of view of the at least one camera, and measuring the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixel.

17. The method of claim 16, wherein the test substrate includes at least one reference mark located in the field of view of the at least one camera, wherein the at least one reference mark has a known size, and wherein the width of the pixel is determined based on the known size.

18. The method of claim 17, wherein the at least one reference mark is a square and the known dimension is the width of the square.

19. The method of claim 12, wherein the test substrate includes a reference line aligned with a radius of the test substrate, and wherein the distance between the outer edge of the test substrate and the edge ring is measured at a location corresponding to the reference line.

20. The method of claim 12, further comprising calculating a correction amount based on the calculated center of the test substrate, and calibrating the robot based on the correction amount.

21. The method of claim 20, further comprising calculating the correction amount based on a calculated offset between a center of the test substrate and a center of the edge ring.

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