Pixel array and method of manufacturing the same

Abstract

A pixel array and a method of manufacturing the same, the pixel array including a pixel sensor and a polydimethylsiloxane layer over the pixel sensor, wherein a surface of the polydimethylsiloxane layer includes a plurality of structures, each structure having an individual width that is less than a wavelength of an incident light to be sensed by the pixel sensor.

Description

Technical Field

[0001] This disclosure relates to a pixel array and a method for manufacturing the same. Background Technology

[0002] Complementary metal-oxide-semiconductor (CMOS) image sensors have expanded beyond imaging to include a wide range of sensing applications. This expansion has led to performance improvements in CMOS image sensors, such as enhanced sensor sensitivity, frame rate, dynamic range, and / or similar properties. In most of these improvements, CMOS image sensors offer capabilities far exceeding those of the human eye, detecting objects invisible to the naked eye. In smartphone cameras, CMOS image sensors can be embedded in phase-detection autofocus pixels to provide autofocus functionality. Some CMOS image sensors incorporate on-chip polarization filters and multi-band spectral filters to extract specific information from the scene. Summary of the Invention

[0003] This disclosure provides a pixel array including a pixel sensor and a polydimethylsiloxane (PDMS) layer. The PDMS layer is located above the pixel sensor. The surface of the PDMS layer includes multiple structures, each having a width smaller than the wavelength of the incident light to be sensed by the pixel sensor.

[0004] This disclosure provides a manufacturing method comprising depositing a polydimethylsiloxane layer over a pixel array of an image sensor and forming a plurality of structures in the polydimethylsiloxane layer using an anodized aluminum oxide (AAO) template. These structures include at least one of a plurality of convex structures or a plurality of concave structures.

[0005] This disclosure provides a pixel array including a pixel sensor and a polydimethylsiloxane antireflective coating. The polydimethylsiloxane antireflective coating is located above the pixel sensor and includes a first portion having a flat surface and a second portion having a non-flat surface. The non-flat surface includes a plurality of structures, each having a width smaller than the wavelength of the incident light to be sensed by the pixel sensor. Attached Figure Description

[0006] The following detailed description, read in conjunction with the accompanying drawings, will provide the best understanding of all aspects of this disclosure. It should be noted that, in accordance with industry standard practice, many features are not drawn to scale. In fact, the dimensions of various features can be increased or decreased as needed to clarify the discussion.

[0007] Figure 1 This is an illustrative environment diagram of the systems and / or methods described herein that can be implemented;

[0008] Figures 2A to 2C These are one or more exemplary embodiments described herein;

[0009] Figures 3 to 15 This is an example configuration diagram of the pixel array described herein;

[0010] Figure 16 yes Figure 1 Illustrative component diagram of one or more devices;

[0011] Figure 17 This is a flowchart illustrating an example process for forming a pixel array.

[0012] [Symbol Explanation]

[0013] 100: Environment

[0014] 102: Tools

[0015] 104: Tools

[0016] 106: Tools

[0017] 108: Tools

[0018] 110: Tools

[0019] 112: Tools

[0020] 114: Wafer / Die Transport Tools

[0021] 200: Implementation Method

[0022] 210: Reference number

[0023] 212: Template

[0024] 214: Template mold

[0025] 216: Reference number

[0026] 218: Image Sensor

[0027] 220: Base

[0028] 222: Polydimethylsiloxane layer

[0029] 224: Reference number

[0030] 226: Reference number

[0031] 228: Structure

[0032] 300: pixel array

[0033] 302: Pixel area

[0034] 400: Examples

[0035] 402: Pixel sensor

[0036] 404: Color filter layer

[0037] 406: Planarization layer

[0038] 408: Microlens layer

[0039] 410: Polydimethylsiloxane layer

[0040] 412: Upper surface

[0041] 500: Examples

[0042] 502: Pixel sensor

[0043] 504: Color filter layer

[0044] 506: Planarization layer

[0045] 508: Microlens layer

[0046] 510: Polydimethylsiloxane layer

[0047] 512: Upper surface

[0048] 514: Structure

[0049] 600: Examples

[0050] 602: Pixel Sensor

[0051] 604: Color filter layer

[0052] 606: Planarization layer

[0053] 608: Microlens layer

[0054] 610: Polydimethylsiloxane layer

[0055] 612: Upper surface

[0056] 614: Structure

[0057] 700: Examples

[0058] 702: Pixel Sensor

[0059] 704: Color Filter Layer

[0060] 706: Planarization layer

[0061] 708: Microlens layer

[0062] 710: Polydimethylsiloxane layer

[0063] 712: Upper surface

[0064] 714: Planarization layer

[0065] 800: Examples

[0066] 802: Pixel Sensor

[0067] 804: Color Filter Layer

[0068] 806: Planarization layer

[0069] 808: Microlens layer

[0070] 810: Polydimethylsiloxane layer

[0071] 812: Upper surface

[0072] 814: Planarization layer

[0073] 816: Structure

[0074] 900: Example

[0075] 902: Pixel Sensor

[0076] 904: Color Filter Layer

[0077] 906: Planarization layer

[0078] 908: Microlens layer

[0079] 910: Polydimethylsiloxane layer

[0080] 912: Upper surface

[0081] 914: Planarization layer

[0082] 916: Structure

[0083] 1000: Examples

[0084] 1002: Pixel Sensor

[0085] 1004: Color Filter Layer

[0086] 1006: Planarization layer

[0087] 1008: Microlens layer

[0088] 1010: Polydimethylsiloxane layer

[0089] 1012: Upper surface

[0090] 1014: Planarization layer

[0091] 1100: Example

[0092] 1102: Pixel sensor

[0093] 1104: Color Filter Layer

[0094] 1106: Planarization layer

[0095] 1108: Microlens layer

[0096] 1110: Polydimethylsiloxane layer

[0097] 1112: Upper surface

[0098] 1114: Planarization layer

[0099] 1116: Structure

[0100] 1200: Examples

[0101] 1202: Pixel sensor

[0102] 1204: Color Filter Layer

[0103] 1206: Planarization layer

[0104] 1208: Microlens layer

[0105] 1210: Polydimethylsiloxane layer

[0106] 1212: Upper surface

[0107] 1214: Planarization layer

[0108] 1216: Structure

[0109] 1300: Example

[0110] 1302: Pixel sensor

[0111] 1304: Color filter layer

[0112] 1306: Planarization layer

[0113] 1308: Microlens layer

[0114] 1310: Polydimethylsiloxane layer

[0115] 1312: Upper surface

[0116] 1316: Part

[0117] 1316a: Part / Structure

[0118] 1316b: Part / Structure

[0119] 1316c: Part / Structure

[0120] 1318: Group

[0121] 1318a: Group

[0122] 1318b: Group

[0123] 1318c: Group

[0124] 1400: Example

[0125] 1402: Pixel sensor

[0126] 1404: Color filter layer

[0127] 1406: Planarization layer

[0128] 1408: Microlens layer

[0129] 1410: Polydimethylsiloxane layer

[0130] 1412: Upper surface

[0131] 1414: Planarization layer

[0132] 1416: Part

[0133] 1416a: Part / Structure

[0134] 1416b: Part / Structure

[0135] 1416c: Part / Structure

[0136] 1418: Group

[0137] 1418a: Group

[0138] 1418b: Group

[0139] 1418c: Group

[0140] 1500: Examples

[0141] 1502: Pixel sensor

[0142] 1504: Color Filter Layer

[0143] 1506: Planarization layer

[0144] 1508: Microlens layer

[0145] 1510: Polydimethylsiloxane layer

[0146] 1512: Upper surface

[0147] 1514: Planarization layer

[0148] 1516: Part

[0149] 1516a: Part / Structure

[0150] 1516b: Part / Structure

[0151] 1516c: Part / Structure

[0152] 1518: Group

[0153] 1518a: Group

[0154] 1518b: Group

[0155] 1518c: Group

[0156] 1600: Device

[0157] 1610: Bus

[0158] 1620: Processor

[0159] 1630: Memory

[0160] 1640: Storage Components

[0161] 1650: Input Component

[0162] 1660: Output Component

[0163] 1670: Communication Components

[0164] 1700: Process

[0165] 1710: Square

[0166] 1720: Square

[0167] m: Spacing

[0168] n: width

[0169] x: Spacing

[0170] y: width Detailed Implementation

[0171] The following disclosure provides many different embodiments or examples to implement different features of the provided object. Specific examples of components and arrangements are described below to simplify this disclosure. These are, of course, merely examples and not limitations. For example, in the description, a process forming a first feature over a second feature may include embodiments where the first and second features are formed in direct contact, or may include additional features formed between the first and second features such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in several instances in this disclosure. This repetition does not inherently define the relationship in the various embodiments and / or configurations discussed.

[0172] In addition, spatial relation terms such as “beneath,” “below,” “lower,” “above,” “upper,” and similar terms may be used here to concisely describe the relationship between one element or feature and another (or other elements or features) illustrated in the diagram. Spatial relation terms, in addition to the directions depicted in the diagram, are intended to encompass different orientations of the device in use or operation. The device may be oriented in other ways (rotated 90 degrees or other directions), and the relational descriptive terms used herein may be interpreted accordingly.

[0173] Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) may include multiple pixel sensors, a color filter layer above the pixel sensors, and microlenses. In some examples, this configuration provides a relatively small angle of incident light, is non-anti-reflective, and restricts light transmission.

[0174] Some embodiments described herein provide an image sensor (e.g., a complementary metal-oxide-semiconductor image sensor) comprising a subwavelength, hydrophobic, and / or antireflective polydimethylsiloxane (PDMS) layer. In some embodiments, this PDMS layer may be fabricated to include a surface having multiple nanostructures (e.g., an array of convex protrusions and / or an array of concave depressions). The nanostructures may be formed using a porous anodic alumina (AAO) template that uses multiple nanopores to form the array of convex protrusions and / or the array of concave depressions. These nanostructures may each have a width smaller than the wavelength of the incident light to be collected by the image sensor, increasing light absorption by increasing the angle of incidence of the incident light that the image sensor can collect. This can improve the quantum efficiency of the image sensor and enhance its sensitivity.

[0175] Figure 1 Figure 100 illustrates an environment in which the systems and / or methods described herein can be implemented. (See Figure 100.) Figure 1 As shown, environment 100 may include multiple semiconductor processing tools 102 to 112 and wafer / die transport tools 114. The multiple semiconductor processing tools 102 to 112 may include deposition tools 102, exposure tools 104, developing tools 106, etching tools 108, planarization tools 110, anti-reflective coating tools 112, and / or another type of semiconductor processing tool. The tools included in environment 100 may be found in semiconductor cleanrooms, semiconductor foundries, semiconductor processing and / or manufacturing facilities, and / or the like.

[0176] The deposition tool 102 is a semiconductor processing tool, comprising a semiconductor processing chamber and one or more means for depositing various types of materials onto a substrate. In some embodiments, the deposition tool 102 includes a spin coater capable of depositing a photoresist layer onto a substrate, such as a wafer. In some embodiments, the deposition tool 102 includes a chemical vapor deposition (CVD) tool, such as a plasma-enhanced chemical vapor deposition (PECVD) tool, a high-density plasma-enhanced chemical vapor deposition (HDP-CVD) tool, a subatmospheric pressure chemical vapor deposition (SACVD) tool, an atomic layer deposition (ALD) tool, a plasma-enhanced atomic layer deposition (PEALD) tool, or another type of chemical vapor deposition tool. In some embodiments, the deposition tool 102 includes a physical vapor deposition (PVD) tool, such as a sputtering tool or another type of physical vapor deposition tool. In some embodiments, the exemplary environment 100 includes multiple types of deposition tools 102.

[0177] Exposure tool 104 is a semiconductor processing tool capable of exposing a photoresist layer to a radiation source, such as an ultraviolet (UV) light source (e.g., deep ultraviolet light source, extreme ultraviolet light source, and / or the like), an X-ray source, and / or the like. Exposure tool 104 exposes the photoresist layer to the radiation source, transferring a pattern from a photomask to the photoresist layer. This pattern may include patterns of one or more semiconductor element layers forming one or more semiconductor elements, patterns of one or more structures forming semiconductor elements, patterns of etched portions of semiconductor elements, and / or the like. In some embodiments, exposure tool 104 includes a scanner, a stepper, or a similar type of exposure tool.

[0178] The developing tool 106 is a semiconductor processing tool capable of developing a photoresist layer exposed to a radiation source to develop a pattern transferred from the exposure tool 104 to the photoresist layer. In some embodiments, the developing tool 106 develops the pattern by removing the unexposed portions of the photoresist layer. In some embodiments, the developing tool 106 develops the pattern by removing the exposed portions of the photoresist layer. In some embodiments, the developing tool 106 develops the pattern by using a chemical developer to dissolve the exposed or unexposed portions of the photoresist layer.

[0179] Etching tool 108 is a semiconductor processing tool capable of etching various types of materials, including substrates, wafers, or semiconductor devices. For example, etching tool 108 may include wet etching tools, dry etching tools, and / or the like. In some embodiments, etching tool 108 includes a chamber filled with an etchant, and a substrate is placed in this chamber for a specific time to remove a specific amount of one or more portions of the substrate. In some embodiments, etching tool 108 may use plasma etching or plasma-assisted etching to etch one or more portions of the substrate, which may involve isotropically or directionally etching one or more portions using ionized gas.

[0180] Planarization tool 110 is a semiconductor processing tool capable of grinding or planarizing the various layers of a wafer or semiconductor device. For example, the grinding apparatus may include a chemical mechanical polishing (CMP) apparatus and / or another type of grinding apparatus. In some embodiments, the grinding apparatus may grind or planarize a layer of deposited or plated material.

[0181] The antireflective coating tool 112 is a semiconductor processing tool capable of forming an antireflective coating on a substrate. For example, the antireflective coating tool 112 may include the following references... Figures 2A to 2C One or more components and / or components that can be formed as shown in the following reference Figures 2A to 2C Anti-reflective coating for image sensors.

[0182] The wafer / die transport tool 114 includes a mobile robot, robotic arm, tram or railcar, and / or another type of device that can transport wafers and / or dies between semiconductor processing tools 102 and 112 and / or to and from other locations such as wafer racks, storage rooms, and / or the like. In some embodiments, the wafer / die transport tool 114 may be a programmed device that travels along a specific path and / or may be semi-automatic or automatic.

[0183] Figure 1 The number and configuration of the devices shown are provided as one or more examples. In practice, more... Figure 1 The apparatus shown may include additional devices, fewer devices, different devices, or devices with different configurations. Furthermore, Figure 1 The two or more devices shown can be implemented in a single device, or Figure 1 The single device shown can be implemented as multiple distributed devices. Alternatively or additionally, a group of devices in environment 100 (e.g., one or more devices) can perform one or more functions performed by another group of devices in environment 100.

[0184] Figures 2A to 2CThese are figures illustrating one or more exemplary embodiments 200 described herein. Exemplary embodiment 200 may illustrate one or more examples of forming an anti-reflective coating on an image sensor. The image sensor may be a complementary metal-oxide-semiconductor image sensor or another type of image sensor. In some embodiments, the image sensor may be a back-illuminated (BSI) complementary metal-oxide-semiconductor image sensor or another type of complementary metal-oxide-semiconductor image sensor.

[0185] like Figure 2A As shown in reference numeral 210, a template 214 can be used to form an anti-reflective coating template 212. The template 212 can be formed from a porous anodic aluminum oxide material, which may contain self-organized aluminum oxide having a honeycomb structure formed by a high-density array of uniform and parallel pores. These pores can be nanostructures, as their width or diameter can be on the order of tens to hundreds of nanometers.

[0186] In some embodiments, pores in a porous anodized alumina material are formed from aluminum by a composite pulse anodizing. In these examples, the template 214 may be filled with aluminum, which may be exposed to an acid solution (e.g., chromic acid, sulfuric acid, and / or another type of acid). A pulsed input voltage is applied through the acid solution to oxidize the surface of the aluminum. The input voltage may comprise a combination of a positive voltage and a relatively small negative voltage. For example, the input voltage may comprise a positive 40 volt (+40V) input voltage and a negative 2 volt (-2V) input voltage. As another example, the input voltage may comprise a positive 100 volt (+100V) input voltage and a negative 4 volt (-4V) input voltage. The combination of the acid solution and the input voltage causes pores to form in the alumina, thereby forming the template 212. In some embodiments, another technique, such as direct current anodizing or pulse anodizing, is used to form pores in the alumina material.

[0187] like Figure 2AAs further shown in reference numeral 216, an image sensor 218 may be placed on a base 220 of an antireflective coating tool 112. The base 220 may be configured to hold a wafer or semiconductor device during the process of forming the antireflective coating. In some embodiments, the base 220 is configured to hold a single image sensor 218. In some embodiments, the base 220 is configured to hold a wafer on which multiple image sensors 218 are formed, allowing the antireflective coating of multiple image sensors 218 to be formed in a single process. As shown in reference numeral 216, a polydimethylsiloxane layer 222 may be deposited on the image sensor 218. Specifically, the polydimethylsiloxane layer 222 may be deposited over one or more portions of the image sensor 218 that will form one or more pixel arrays of the image sensor 218. In some embodiments, the antireflective coating tool 112 deposits the polydimethylsiloxane layer 222 on the image sensor 218. In some embodiments, when the image sensor 218 is in the antireflective coating tool 112, the deposition tool 102 deposits a polydimethylsiloxane layer 222 on the image sensor 218.

[0188] The polydimethylsiloxane layer 222 may comprise a polydimethylsiloxane material (also known as dimethylpolysiloxane or dimethylpolysiloxane), which is a silicon-based organic polymer belonging to the family of polymeric organosilicon compounds called siloxanes. The polydimethylsiloxane material is an optically transparent viscoelastic material that is a viscous liquid at high temperatures and long flow times, and an elastic solid at low temperatures and short flow times. The polydimethylsiloxane layer 222 can be deposited on the image sensor 218 while the polydimethylsiloxane material is in the liquid phase, such that the polydimethylsiloxane layer 222 has the shape of the image sensor surface.

[0189] like Figure 2A As further shown in reference numeral 224, when the polydimethylsiloxane material is in the liquid phase, a porous anodic aluminum oxide template 212 can be pressed into the polydimethylsiloxane layer 222. The porous anodic aluminum oxide template 212 is fixed for a certain period of time until the polydimethylsiloxane layer 222 hardens or solidifies. The porous anodic aluminum oxide template 212 can then be removed from the polydimethylsiloxane layer 222.

[0190] like Figure 2AAs further shown in reference numeral 226, the final polydimethylsiloxane layer 222 may comprise a plurality of structures 228 (e.g., nanostructures) formed by the pores of the porous anodic aluminum oxide template 212. The polydimethylsiloxane layer 222 can serve as an anti-reflective coating for the image sensor 218, thereby increasing the transmission of incident light to one or more pixel arrays in the image sensor. Due to the hydrophobic properties of the polydimethylsiloxane material, the polydimethylsiloxane layer 222 can also reduce moisture accumulation in the image sensor 218. Furthermore, the size and / or position of the structures 228 can be configured to achieve the refractive index of the image sensor 218, thereby improving the ability of the image sensor 218 to collect and / or absorb incident light at a larger angle of incidence than the microlens layer of the image sensor.

[0191] Figure 2B An illustrative process for forming structure 228 in polydimethylsiloxane layer 222 is shown at reference numeral 224. Specifically, Figure 2B The illustration shows an example process where structure 228 is a concave or recessed structure. Figure 2B In the illustrated process, a porous anodized aluminum template 212 with multiple pores forming multiple convex structures (or protrusions) can be used. The convex structures of the porous anodized aluminum template 212 can be pressed into the polydimethylsiloxane layer 222, causing the convex structures to form concave or recessed structures within the polydimethylsiloxane layer 222. For example... Figure 2B As further shown, the convex structure of the configurable porous anodized aluminum template 212 allows the image sensor 218 to be formed having one or more parameters, such as a specific refractive index and / or a specific focal length. Specifically, the spacing (x) and width (y) (or diameter) of the convex structure are configured such that the concave or recessed structures formed in the polydimethylsiloxane layer 222 exhibit the same spacing and width. In some embodiments, the spacing (x) of the convex structure forming the porous anodized aluminum template 212 (and thus the spacing of the concave or recessed structures formed in the polydimethylsiloxane layer 222) is from about 85 nanometers to about 180 nanometers.

[0192] The width (y) of the convex structure (and thus the width in each individual concave or recessed structure) can be smaller than the wavelength of the incident light that the image sensor 218 needs to sense or collect. This allows the polydimethylsiloxane layer 222 to focus and / or refract the incident light at a relatively high angle of incidence, thereby reducing reflections and / or glare from the image sensor 218. For example, if the image sensor 218 needs to sense or collect incident light in the visible spectrum (corresponding to wavelengths from about 380 nm to about 740 nm), the width (y) of the convex structure (and thus the width of each individual concave or recessed structure) can be less than about 380 nm. In some embodiments, the width (y) of the convex structure (and thus the width of each individual concave or recessed structure) can be from about 30 nm to about 200 nm.

[0193] Figure 2C Another illustrative process is shown, in which structure 228 is formed in polydimethylsiloxane layer 222 at reference numeral 224. Specifically, Figure 2C The illustration shows an example process where structure 228 is a convex structure or protrusion. Figure 2C In the illustrated process, a porous anodized aluminum template 212 with multiple pores forming multiple concave or recessed structures can be used. The concave or recessed structures of the porous anodized aluminum template 212 can be pressed into the polydimethylsiloxane layer 222, causing the concave or recessed structures to form convex structures or protrude from the polydimethylsiloxane layer 222. For example... Figure 2C As further shown, the porous anodic aluminum oxide template 212 can be configured with concave or recessed structures such that the image sensor 218 is formed to have one or more parameters, such as a specific refractive index and / or a specific focal length. Specifically, the spacing (m) and width (n) (or diameter) of the concave or recessed structures can be set such that the convex structures or protrusions formed in the polydimethylsiloxane layer 222 exhibit the same spacing and width. In some embodiments, the spacing (m) of the concave or recessed structures forming the porous anodic aluminum oxide template 212 (and thus the spacing of the convex structures or protrusions formed in the polydimethylsiloxane layer 222) is from about 85 nanometers to about 180 nanometers.

[0194] The width (n) of the concave or recessed structure (and thus the width of each individual convex structure or protrusion formed) can be smaller than the wavelength of the incident light that the image sensor 218 is to sense or collect. In this way, the polydimethylsiloxane layer 222 can focus and / or refract the incident light at a relatively high angle of incidence, thereby reducing reflections and / or glare from the image sensor 218. For example, if the sensor 218 is to sense or collect incident light in the visible spectrum (corresponding to wavelengths from about 380 nm to about 740 nm), the width (n) of the concave or recessed structure (and thus the width of each individual convex structure or protrusion formed) can be less than about 380 nm. In some embodiments, the width (n) of the concave or recessed structure (and thus the width of each individual convex structure or protrusion formed) can be from about 30 nm to about 200 nm.

[0195] As shown above, Figures 2A to 2C Provide one or more examples. Other examples may differ from those provided. Figures 2A to 2C The subject being described.

[0196] Figures 3 to 15 This is an exemplary configuration diagram of the pixel array 300 described herein. In some embodiments, the pixel array 300 may be included in an image sensor, such as image sensor 218. The image sensor may be a complementary metal-oxide-semiconductor (CMOS) image sensor, a back-illuminated CMOS image sensor, or another type of image sensor. Although Figures 3 to 15 Various examples of layer and / or element configurations are illustrated, but pixel arrays can be configured to include other arrangements of layers and / or components, a larger number of layers and / or elements, fewer layers and / or elements, and / or different layers and / or elements.

[0197] Figure 3 This is a top-down view of the pixel array 300. (Example) Figure 3 As shown, the pixel array 300 may include a plurality of pixel regions 302. In some embodiments, the pixel regions 302 may be square or rectangular and configured as a grid. In some embodiments, the pixel regions 302 may include other shapes, such as circles, octagons, rhombuses, and / or other shapes.

[0198] The pixel array 300 can be electrically connected to a back-end process (BEOL) metallization stack (not shown) of the image sensor. The BEOL metallization stack can electrically connect the pixel array 300 to control circuitry, which can be used to measure the accumulation of incident light in pixel region 302 and convert the measurement results into electronic signals.

[0199] Figures 4 to 15 Draw along Figure 3 Multiple illustrative cross-sectional views of the pixel array 300 with tangent AA in the image. For example... Figure 4As shown, in one example 400, each pixel region 302 may include a separate pixel sensor 402. Each pixel sensor 402 may include multiple layers and / or semiconductor structures configured to collect and / or absorb incident light. For example, the pixel sensor 402 may include a substrate (e.g., a silicon substrate, a substrate formed of a silicon-containing material, a III-V compound semiconductor substrate, such as a gallium arsenide (GaAs) substrate, a silicon-on-insulator (SOI) substrate, or another type of substrate capable of generating charge from photons of incident light).

[0200] A photodiode can be formed by doping a substrate with various types of ions through diffusion or ion implantation to form pn junctions or PIN junctions (e.g., junctions located between p-type portions, intrinsically (or undoped) portions, and n-type portions). For example, an n-type dopant can be doped into the substrate to form a first portion (e.g., an n-type portion) of the photodiode, and a p-type dopant can be doped into the substrate to form a second portion (e.g., a p-type portion). The photodiode can be configured to absorb photons of incident light. Due to the photoelectric effect, the absorption of photons causes the photodiode to accumulate charge (called photocurrent). Here, photons strike the photodiode, causing the emission of electrons. The emission of electrons creates electron-hole pairs, where electrons migrate towards the cathode of the photodiode and holes migrate towards the anode, generating a photocurrent.

[0201] In some embodiments, a deep trench isolation (DTI) structure is formed on each side of the photodiode in the substrate to provide optical isolation between adjacent pixel regions 302 and reduce optical crosstalk between adjacent pixel regions 302. The deep trench isolation structure can be formed by photoresist coating the substrate (e.g., using deposition tool 102), exposing the photoresist to a radiation source (e.g., using exposure tool 104) to form a pattern in the photoresist, removing exposed or unexposed portions of the photoresist (e.g., using development tool 106), and etching the deep trench isolation structure in the substrate based on the pattern in the photoresist (e.g., using etching tool 108). In some embodiments, an oxide, such as silicon oxide (SiO2), can be used. x Alternatively, another dielectric material may be used to fill the deep trench isolation structure (e.g., using deposition tool 102) and planarize it (e.g., using planarization tool 110).

[0202] like Figure 4 As further shown, the pixel array 300 may include a color filter layer 404. Figure 4In the illustrated example 400, a color filter layer 404 is formed above and / or on the pixel sensor 402 of the pixel array 300. The color filter layer 404 may comprise an array of color filter regions, each filtering incident light to allow different wavelengths of the incident light to pass through and reach the corresponding photodiode of the associated pixel region 302. For example, a first color filter region may filter incident light from a first pixel region, a second color filter region may filter incident light from a second pixel region (e.g., within the same wavelength range or a different wavelength range), a third color filter region may filter incident light from a third pixel region (e.g., within the same wavelength range as the first and / or second color filters or a different wavelength range), and so on. The color filter region may be, for example, a blue color filter region that allows a portion of the incident light approaching a wavelength of 450 nanometers to pass through the color filter layer 404 while blocking other wavelengths. Another color filter region may be, for example, a green color filter region, which allows incident light with a wavelength close to 550 nanometers to pass through the color filter layer 404 while blocking other wavelengths. Another color filter region may be, for example, a red color filter region, which allows incident light with a wavelength close to 650 nanometers to pass through the color filter layer 404 while blocking other wavelengths.

[0203] In some embodiments, the semiconductor processing tool (e.g., deposition tool 102) may use chemical vapor deposition, physical vapor deposition, atomic layer deposition, or another type of deposition technique to deposit the color filter layer 404. In some embodiments, one or more pixel regions 302 in the pixel array 300 omit the color filter layer 404. For example, the white pixel region 302 omits the color filter layer 404 to allow all wavelengths of light to pass through into the associated photodiode (e.g., to determine overall brightness to improve the photosensitivity of the image sensor). As another example, the near-infrared (NIR) pixel region 302 omits the color filter layer 404 to allow near-infrared light to pass through into the associated photodiode.

[0204] like Figure 4 As further shown, the pixel array 300 may include a planarization layer 406. Figure 4 In the illustrated example 400, a planarization layer 406 is formed above and / or on the color filter layer 404. The planarization layer 406 may serve as a passivation layer for the pixel array 300. In some embodiments, the planarization layer 406 is made of silicon nitride (SiN). x Silicon carbide (SiC) xThe semiconductor processing tool (e.g., deposition tool 102) may use a suitable deposition technique, such as chemical vapor deposition, physical vapor deposition, atomic layer deposition, and / or another deposition technique, to deposit the planarization layer 406.

[0205] like Figure 4 As further shown, the pixel array 300 may include a microlens layer 408. Figure 4 In the illustrated example 400, a microlens layer 408 is formed above and / or on the planarization layer 406. The microlens layer 408 may contain individual microlenses for each pixel region 302. For example, a first microlens may be formed to focus incident light toward a photodiode in a first pixel region, a second microlens may be formed to focus incident light toward a photodiode in a second pixel region, a third microlens may be formed to focus incident light toward a photodiode in a third pixel region, and so on.

[0206] like Figure 4 As further shown, the pixel array 300 may include a polydimethylsiloxane layer 410. Figure 4 In the illustrated example 400, a polydimethylsiloxane layer 410 is formed above and / or on the microlens layer 408. Furthermore, the polydimethylsiloxane layer 410 may be formed to have a substantially flat, planar, and / or smooth upper surface 412. In some embodiments, one or more semiconductor processing tools (e.g., deposition tool 102, antireflective coating tool 112, and / or another semiconductor processing tool) are used, and the above-described references are used. Figures 2A to 2C One or more technologies and / or processes are used to form the polydimethylsiloxane layer 410.

[0207] like Figure 5 As shown, in one example 500, each pixel region 302 may include a separate pixel sensor 502 (similar to the pixel sensor 402 described above), a color filter layer 504 (similar to the color filter layer 404 described above), a planarization layer 506 (similar to the planarization layer 406 described above), a microlens layer 508 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 510 (similar to the polydimethylsiloxane layer 410 described above).

[0208] like Figure 5 As further shown, a color filter layer 504 may be formed above and / or on the pixel sensor 502. A planarization layer 506 may be formed above and / or on the color filter layer 504. A microlens layer 508 may be formed above and / or on the planarization layer 506. A polydimethylsiloxane layer 510 may be formed above and / or on the microlens layer 508. Figure 5In the illustrated example 500, the polydimethylsiloxane layer 510 may be formed to include an upper surface 512 having a plurality of structures 514. Specifically, the structures 514 may be convex structures or protrusions (see similar references). Figure 2C (The described convex structure or protrusion).

[0209] like Figure 6 As shown, in one example 600, each pixel region 302 may include a separate pixel sensor 602 (similar to the pixel sensor 402 described above), a color filter layer 604 (similar to the color filter layer 404 described above), a planarization layer 606 (similar to the planarization layer 406 described above), a microlens layer 608 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 610 (similar to the polydimethylsiloxane layer 410 described above).

[0210] like Figure 6 As further shown, a color filter layer 604 may be formed above and / or on the pixel sensor 602. A planarization layer 606 may be formed above and / or on the color filter layer 604. A microlens layer 608 may be formed above and / or on the planarization layer 606. A polydimethylsiloxane layer 610 may be formed above and / or on the microlens layer 608. Figure 6 In the illustrated example 600, the polydimethylsiloxane layer 610 may be formed to include an upper surface 612 having a plurality of structures 614. Specifically, the structures 614 may be concave or recessed structures (see similar references). Figure 2B The described concave or recessed structure.

[0211] like Figure 7 As shown, in one example 700, each pixel region 302 may include a separate pixel sensor 702 (similar to the pixel sensor 402 described above), a color filter layer 704 (similar to the color filter layer 404 described above), a plurality of planarization layers 706 and 714 (similar to the planarization layer 406 described above), a microlens layer 708 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 710 (similar to the polydimethylsiloxane layer 410 described above).

[0212] like Figure 7 As further shown, a polydimethylsiloxane layer 710 may be formed above and / or on the pixel sensor 702. A planarization layer 706 may be formed above and / or on the polydimethylsiloxane layer 710. A color filter layer 704 may be formed above and / or on the planarization layer 706. A planarization layer 714 may be formed above and / or on the color filter layer 704. A microlens layer 708 may be formed above and / or on the planarization layer 714. Figure 7 In the illustrated example 700, the polydimethylsiloxane layer 710 may be formed to include a substantially flat, substantially planar, and / or substantially smooth upper surface 712.

[0213] like Figure 8 As shown, in one example 800, each pixel region 302 may include a separate pixel sensor 802 (similar to the pixel sensor 402 described above), a color filter layer 804 (similar to the color filter layer 404 described above), a plurality of planarization layers 806 and 814 (similar to the planarization layer 406 described above), a microlens layer 808 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 810 (similar to the polydimethylsiloxane layer 410 described above).

[0214] like Figure 8 As further shown, a polydimethylsiloxane layer 810 may be formed above and / or on the pixel sensor 802. A planarization layer 806 may be formed above and / or on the polydimethylsiloxane layer 810. A color filter layer 804 may be formed above and / or on the planarization layer 806. A planarization layer 814 may be formed above and / or on the color filter layer 804. A microlens layer 808 may be formed above and / or on the planarization layer 814. In the example 800 illustrated in Figure 8, the polydimethylsiloxane layer 810 may be formed to include an upper surface 812 having a plurality of structures 816. Specifically, the structures 816 may be convex structures or protrusions (similar to the reference). Figure 2C (The described convex structure or protrusion).

[0215] like Figure 9 As shown, in one example 900, each pixel region 302 may include a separate pixel sensor 902 (similar to the pixel sensor 402 described above), a color filter layer 904 (similar to the color filter layer 404 described above), a plurality of planarization layers 906 and 914 (similar to the planarization layer 406 described above), a microlens layer 908 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 910 (similar to the polydimethylsiloxane layer 410 described above).

[0216] like Figure 9 As further shown, a polydimethylsiloxane layer 910 may be formed above and / or on the pixel sensor 902. A planarization layer 906 may be formed above and / or on the polydimethylsiloxane layer 910. A color filter layer 904 may be formed above and / or on the planarization layer 906. A planarization layer 914 may be formed above and / or on the color filter layer 904. A microlens layer 908 may be formed above and / or on the planarization layer 914. Figure 9 In the illustrated example 900, the polydimethylsiloxane layer 910 may be formed to include an upper surface 912 having a plurality of structures 916. Specifically, the structures 916 may be concave or recessed structures (see similar references). Figure 2B The described concave or recessed structure.

[0217] like Figure 10As shown, in one example 1000, each pixel region 302 may include a separate pixel sensor 1002 (similar to the pixel sensor 402 described above), a color filter layer 1004 (similar to the color filter layer 404 described above), a plurality of planarization layers 1006 and 1014 (similar to the planarization layer 406 described above), a microlens layer 1008 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1010 (similar to the polydimethylsiloxane layer 410 described above).

[0218] like Figure 10 As further shown, a color filter layer 1004 may be formed above and / or on the pixel sensor 1002. A planarization layer 1006 may be formed above and / or on the color filter layer 1004. A polydimethylsiloxane layer 1010 may be formed above and / or on the planarization layer 1006. A planarization layer 1014 may be formed above and / or on the polydimethylsiloxane layer 1010. A microlens layer 1008 may be formed above and / or on the planarization layer 1014. Figure 10 In the illustrated example 1000, the polydimethylsiloxane layer 1010 may be formed to include a substantially flat, substantially planar, and / or substantially smooth upper surface 1012.

[0219] like Figure 11 As shown, in one example 1100, each pixel region 302 may include a separate pixel sensor 1102 (similar to the pixel sensor 402 described above), a color filter layer 1104 (similar to the color filter layer 404 described above), a plurality of planarization layers 1106 and 1114 (similar to the planarization layer 406 described above), a microlens layer 1108 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1110 (similar to the polydimethylsiloxane layer 410 described above).

[0220] like Figure 11 As further shown, a color filter layer 1104 may be formed above and / or on the pixel sensor 1102. A planarization layer 1106 may be formed above and / or on the color filter layer 1104. A polydimethylsiloxane layer 1110 may be formed above and / or on the planarization layer 1106. A planarization layer 1114 may be formed above and / or on the polydimethylsiloxane layer 1110. A microlens layer 1108 may be formed above and / or on the planarization layer 1114. Figure 11 In the illustrated example 1100, the polydimethylsiloxane layer 1110 may be formed to include an upper surface 1112 having a plurality of structures 1116. Specifically, the structures 1116 may be convex structures or protrusions (see similar reference). Figure 2C (The described convex structure or protrusion).

[0221] like Figure 12As shown, in one example 1200, each pixel region 302 may include a separate pixel sensor 1202 (similar to the pixel sensor 402 described above), a color filter layer 1204 (similar to the color filter layer 404 described above), a plurality of planarization layers 1206 and 1214 (similar to the planarization layer 406 described above), a microlens layer 1208 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1210 (similar to the polydimethylsiloxane layer 410 described above).

[0222] like Figure 12 As further shown, a color filter layer 1204 may be formed above and / or on the pixel sensor 1202. A planarization layer 1206 may be formed above and / or on the color filter layer 1204. A polydimethylsiloxane layer 1210 may be formed above and / or on the planarization layer 1206. A planarization layer 1214 may be formed above and / or on the polydimethylsiloxane layer 1210. A microlens layer 1208 may be formed above and / or on the planarization layer 1214. Figure 12 In the illustrated example 1200, the polydimethylsiloxane layer 1210 may be formed to include an upper surface 1212 having a plurality of structures 1216. Specifically, the structures 1216 may be concave or recessed structures (see similar references). Figure 2B The described concave or recessed structure.

[0223] like Figure 13 As shown, in one example 1300, each pixel region 302 may include a pixel sensor 1302 (similar to the pixel sensor 402 described above), a color filter layer 1304 (similar to the color filter layer 404 described above), a planarization layer 1306 (similar to the planarization layer 406 described above), a microlens layer 1308 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1310 (similar to the polydimethylsiloxane layer 410 described above).

[0224] like Figure 13 As further shown in the figure, a color filter layer 1304 may be formed above and / or on the pixel sensor 1302. A planarization layer 1306 may be formed above and / or on the color filter layer 1304. A microlens layer 1308 may be formed above and / or on the planarization layer 1306. A polydimethylsiloxane layer 1310 may be formed above and / or on the microlens layer 1308. Furthermore, in Figure 13In the illustrated example 1300, the polydimethylsiloxane layer 1310 may have multiple portions 1316, which are configured differently relative to the upper surface 1312 of the polydimethylsiloxane layer 1310. In these examples, the polydimethylsiloxane layer 1310 may include multiple structures formed in the upper surface 1312, wherein multiple subsets of these structures are configured differently. For example, portion 1316a may be configured with a substantially flat, substantially planar, and / or substantially smooth upper surface 1312 of the polydimethylsiloxane layer 1310; portion 1316b may be configured with multiple convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310; portion 1316c may be configured with multiple concave structures or recesses formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and so on. Each portion 1316 may be formed on one or more groups 1318 of pixel areas 302. For example, portion 1316a may be formed on one or more groups 1318a of pixel areas 302, portion 1316b may be formed on one or more groups 1318b of pixel areas 302, portion 1316c may be formed on one or more groups 1318c of pixel areas 302, and so on.

[0225] The portions 1316 of the polydimethylsiloxane layer 1310 can be arranged in various combinations and / or sequences. For example, a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312 can be arranged adjacent to another portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, can be arranged adjacent to a portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and / or can be arranged adjacent to a portion 1316 having a plurality of concave structures or recesses formed in the upper surface 1312 of the polydimethylsiloxane layer 1310. As another example, a portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310 may be arranged adjacent to a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, may be arranged adjacent to another portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and / or may be arranged adjacent to a portion 1316 having a plurality of concave structures or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310. As another example, a portion 1316 having a plurality of concave or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310 may be arranged adjacent to a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, may be arranged adjacent to a portion 1316 having a plurality of convex or protruding structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and / or may be arranged adjacent to another portion 1316 having a plurality of concave or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310.

[0226] As another example, a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312 may be arranged not adjacent to another portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, may be arranged not adjacent to a portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, or may be arranged not adjacent to a portion 1316 having a plurality of concave structures or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310. As another example, a portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310 may be arranged not adjacent to a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, may be arranged not adjacent to another portion 1316 having a plurality of convex structures or protrusions formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and / or may be arranged not adjacent to a portion 1316 having a plurality of concave structures or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310. As another example, a portion 1316 having a plurality of concave or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310 may be arranged not adjacent to a portion 1316 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1312, may be arranged not adjacent to a portion 1316 having a plurality of convex or protruding structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310, and / or may be arranged not adjacent to another portion 1316 having a plurality of concave or recessed structures formed in the upper surface 1312 of the polydimethylsiloxane layer 1310.

[0227] In some embodiments, two or more portions 1316 of the polydimethylsiloxane layer 1310 may be configured such that two or more associated groups 1318 of the pixel region 302 have the same refractive index and / or the same focal length. In some embodiments, two or more portions 1316 of the polydimethylsiloxane layer 1310 may be configured such that two or more associated groups 1318 of the pixel region 302 have different refractive indices and / or different focal lengths.

[0228] like Figure 14 As shown, in one example 1400, each pixel region 302 may include a separate pixel sensor 1402 (similar to the pixel sensor 402 described above), a color filter layer 1404 (similar to the color filter layer 404 described above), a plurality of planarization layers 1406 and 1414 (similar to the planarization layer 406 described above), a microlens layer 1408 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1410 (similar to the polydimethylsiloxane layer 410 described above).

[0229] like Figure 14 As further shown, a polydimethylsiloxane layer 1410 may be formed above and / or on the pixel sensor 1402. A planarization layer 1406 may be formed above and / or on the polydimethylsiloxane layer 1410. A color filter layer 1404 may be formed above and / or on the planarization layer 1406. A planarization layer 1414 may be formed above and / or on the color filter layer 1404. A microlens layer 1408 may be formed above and / or on the planarization layer 1414. Furthermore, in Figure 14 In the illustrated example 1400, the polydimethylsiloxane layer 1410 may have multiple portions 1416, which are configured differently relative to the upper surface 1412 of the polydimethylsiloxane layer 1410. In these examples, the polydimethylsiloxane layer 1410 may include multiple structures formed in the upper surface 1412, wherein multiple subsets of these structures are configured differently. For example, portion 1416a may be configured with a substantially flat, substantially planar, and / or substantially smooth upper surface 1412 of the polydimethylsiloxane layer 1410; portion 1416b may be configured with multiple convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410; portion 1416c may be configured with multiple concave structures or recesses formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and so on. Each portion 1416 may be formed on one or more groups 1418 of pixel areas 302. For example, portion 1416a may be formed on one or more groups 1418a of pixel areas 302, portion 1416b may be formed on one or more groups 1418b of pixel areas 302, portion 1416c may be formed on one or more groups 1418c of pixel areas 302, and so on.

[0230] The portions 1416 of the polydimethylsiloxane layer 1410 can be arranged in various combinations and / or sequences. For example, a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412 can be arranged adjacent to another portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, can be arranged adjacent to a portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and / or can be arranged adjacent to a portion 1416 having a plurality of concave structures or recesses formed in the upper surface 1412 of the polydimethylsiloxane layer 1410. As another example, a portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410 may be arranged adjacent to a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, may be arranged adjacent to another portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and / or may be arranged adjacent to a portion 1416 having a plurality of concave structures or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410. As another example, a portion 1416 having a plurality of concave or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410 may be arranged adjacent to a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, may be arranged adjacent to a portion 1416 having a plurality of convex or protruding structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and / or may be arranged adjacent to another portion 1416 having a plurality of concave or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410.

[0231] As another example, a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412 may be arranged not adjacent to another portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, may be arranged not adjacent to a portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, or may be arranged not adjacent to a portion 1416 having a plurality of concave structures or recesses formed in the upper surface 1412 of the polydimethylsiloxane layer 1410. As another example, a portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410 may be arranged not adjacent to a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, may be arranged not adjacent to another portion 1416 having a plurality of convex structures or protrusions formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and / or may be arranged not adjacent to a portion 1416 having a plurality of concave structures or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410. As another example, a portion 1416 having a plurality of concave or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410 may be arranged not adjacent to a portion 1416 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1412, may be arranged not adjacent to a portion 1416 having a plurality of convex or protruding structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410, and / or may be arranged not adjacent to another portion 1416 having a plurality of concave or recessed structures formed in the upper surface 1412 of the polydimethylsiloxane layer 1410.

[0232] In some embodiments, two or more portions 1416 of the polydimethylsiloxane layer 1410 may be configured such that two or more associated groups 1418 of the pixel region 302 have the same refractive index and / or the same focal length. In some embodiments, two or more portions 1416 of the polydimethylsiloxane layer 1410 may be configured such that two or more associated groups 1418 of the pixel region 302 have different refractive indices and / or different focal lengths.

[0233] like Figure 15 As shown, in one example 1500, each pixel region 302 may include a separate pixel sensor 1502 (similar to the pixel sensor 402 described above), a color filter layer 1504 (similar to the color filter layer 404 described above), a plurality of planarization layers 1506 and 1514 (similar to the planarization layer 406 described above), a microlens layer 1508 (similar to the microlens layer 408 described above), and a polydimethylsiloxane layer 1510 (similar to the polydimethylsiloxane layer 410 described above).

[0234] like Figure 15 As further shown, a color filter layer 1504 may be formed above and / or on the pixel sensor 1502. A planarization layer 1506 may be formed above and / or on the color filter layer 1504. A polydimethylsiloxane layer 1510 may be formed above and / or on the planarization layer 1506. A planarization layer 1514 may be formed above and / or on the polydimethylsiloxane layer 1510. A microlens layer 1508 may be formed above and / or on the planarization layer 1514. Furthermore, in Figure 15 In the illustrated example 1500, the polydimethylsiloxane layer 1510 may have multiple portions 1516, which are configured differently relative to the upper surface 1512 of the polydimethylsiloxane layer 1510. In these examples, the polydimethylsiloxane layer 1510 may include multiple structures formed in the upper surface 1512, wherein multiple subsets of these structures are configured differently. For example, portion 1516a may be configured with a substantially flat, substantially planar, and / or substantially smooth upper surface 1512 of the polydimethylsiloxane layer 1510; portion 1516b may be configured with multiple convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510; portion 1516c may be configured with multiple concave structures or recesses formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and so on. Each portion 1516 may be formed on one or more groups 1518 of pixel areas 302. For example, portion 1516a may be formed on one or more groups 1518a of pixel areas 302, portion 1516b may be formed on one or more groups 1518b of pixel areas 302, portion 1516c may be formed on one or more groups 1518c of pixel areas 302, and so on.

[0235] The portions 1516 of the polydimethylsiloxane layer 1510 can be arranged in various combinations and / or sequences. For example, a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512 can be arranged adjacent to another portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, can be arranged adjacent to a portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and / or can be arranged adjacent to a portion 1516 having a plurality of concave structures or recesses formed in the upper surface 1512 of the polydimethylsiloxane layer 1510. As another example, a portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510 may be arranged adjacent to a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, may be arranged adjacent to another portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and / or may be arranged adjacent to a portion 1516 having a plurality of concave structures or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510. As another example, a portion 1516 having a plurality of concave or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510 may be arranged adjacent to a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, may be arranged adjacent to a portion 1516 having a plurality of convex or protruding structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and / or may be arranged adjacent to another portion 1516 having a plurality of concave or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510.

[0236] As another example, a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512 may be arranged not adjacent to another portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, may be arranged not adjacent to a portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, or may be arranged not adjacent to a portion 1516 having a plurality of concave structures or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510. As another example, a portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510 may be arranged not adjacent to a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, may be arranged not adjacent to another portion 1516 having a plurality of convex structures or protrusions formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and / or may be arranged not adjacent to a portion 1516 having a plurality of concave structures or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510. As another example, a portion 1516 having a plurality of concave or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510 may be arranged not adjacent to a portion 1516 having a substantially flat, substantially planar, and / or substantially smooth upper surface 1512, may be arranged not adjacent to a portion 1516 having a plurality of convex or protruding structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510, and / or may be arranged not adjacent to another portion 1516 having a plurality of concave or recessed structures formed in the upper surface 1512 of the polydimethylsiloxane layer 1510.

[0237] In some embodiments, two or more portions 1516 of the polydimethylsiloxane layer 1510 may be provided such that two or more associated groups 1518 of the pixel region 302 have the same refractive index and / or the same focal length. In some embodiments, two or more portions 1516 of the polydimethylsiloxane layer 1510 may be provided such that two or more associated groups 1518 of the pixel region 302 have different refractive indices and / or different focal lengths.

[0238] As shown above, Figures 3 to 15 This is provided as an example. Other examples may differ. Figures 3 to 15 The described entity. It may be arranged according to the above examples and / or other examples. Figures 3 to 15 The various layers and / or elements of the pixel array 300 described herein are used to achieve a specific focal length (or a set of specific focal lengths) of the pixel array 300, a specific refractive index (or a set of specific refractive indices) of the pixel array 300, and / or other parameters of the pixel array 300.

[0239] Figure 16 This is a diagram illustrating the components of device 1600. In some embodiments, one or more of the semiconductor processing tools 102 to 112, and / or the wafer / die transport tool 114 may include one or more devices 1600, and / or one or more components of device 1600. Figure 16 As shown, device 1600 may include bus 1610, processor 1620, memory 1630, storage component 1640, input component 1650, output component 1660, and communication component 1670.

[0240] Bus 1610 includes components capable of wired and / or wireless communication between components of device 1600. Processor 1620 includes a central processing unit, graphics processing unit, microprocessor, controller, microcontroller, digital signal processor, field-programmable gate array, application-specific integrated circuit, and / or another type of processing element. Processor 1620 is implemented through hardware, firmware, or a combination of hardware and software. In some embodiments, processor 1620 includes one or more processors capable of programmably executing functions. Memory 1630 includes random access memory, read-only memory, and / or another type of memory (e.g., flash memory, magnetic memory, and / or optical memory).

[0241] Storage component 1640 stores information and / or software related to the operation of device 1600. For example, storage component 1640 may include a hard disk drive, disk drive, optical disk drive, solid-state drive, optical disk, multi-format digital optical disk, and / or another type of non-transitional computer-readable media. Input component 1650 enables device 1600 to receive input, such as user input and / or sensed input. For example, input component 1650 may include a touchscreen, keyboard, keypad, mouse, buttons, microphone, switch, sensor, GPS element, accelerometer, gyroscope, actuator, and / or the like. Output component 1660 enables device 1600 to provide output, such as via a display, speaker, and / or one or more light-emitting diodes. Communication component 1670 enables device 1600 to communicate with other devices, such as via wired and / or wireless connections. For example, communication component 1670 may include a receiver, transmitter, transceiver, modem, network interface card, antenna, and / or the like.

[0242] Apparatus 1600 may perform one or more of the processes described herein. For example, a non-transitional computer-readable medium (e.g., memory 1630 and / or storage component 1640) may store a set of instructions (e.g., one or more instructions, code, software code, program code, and / or the like) that are executed by processor 1620. Processor 1620 may execute the set of instructions to perform one or more of the processes described herein. In some embodiments, the set of instructions is executed by one or more processors 1620, causing one or more processors 1620 and / or apparatus 1600 to perform one or more of the processes described herein. In some embodiments, wired circuitry may replace or be combined with instructions to perform one or more of the processes described herein. Therefore, the embodiments described herein are not limited to any particular combination of hardware circuitry and software.

[0243] Figure 16 The number and configuration of components shown are provided as an example. Device 1600 may include... Figure 16 The additional components, fewer components, different components, or components arranged differently shown. Alternatively or alternatively, a set of components of device 1600 (e.g., one or more components) may perform one or more functions described as being performed by another set of components of device 1600.

[0244] Figure 17 This is a flowchart illustrating an exemplary process 1700 related to the formation of a pixel array. In some embodiments, a semiconductor processing tool (e.g., one or more of semiconductor processing tools 102 to 112) may perform the process. Figure 17 One or more process blocks. Alternatively or alternatively, execution may be performed by one or more components of the device 1600, such as processor 1620, memory 1630, storage component 1640, input component 1650, output component 1660, and / or communication component 1670. Figure 17 One or more process blocks.

[0245] like Figure 17 As shown, process 1700 may include depositing a polydimethylsiloxane layer over the pixel array of an image sensor (block 1710). For example, a semiconductor processing tool (e.g., deposition tool 102, antireflective coating tool 112, and / or another semiconductor processing tool) may deposit (reference numeral 216) a polydimethylsiloxane layer (polydimethylsiloxane layers 222, 410, 510, 610, 710, 810, 910, 1010, 1110, 1210, 1310, 1410, 1510) over the pixel array (pixel array 300) of the image sensor (image sensor 218), as described above.

[0246] like Figure 17As further shown, process 1700 may include step 224 of reference numeral 224, using an anodized aluminum template to form multiple structures in the polydimethylsiloxane layer, wherein these structures include at least one: multiple convex structures or multiple concave structures (block 1720). For example, a semiconductor processing tool may use an anodized aluminum template (template 212) to form (reference numeral 224) multiple structures (structures 228, 514, 614, 816, 916, 1116, 1216, 1316b, 1316c, 1416b, 1416c, 1516b, 1516c) in the polydimethylsiloxane layer, as described above. In some embodiments, the plurality of structures include at least one of a plurality of convex structures (structures 514, 816, 1116, 1316b, 1416b, 1516b) or a plurality of concave structures (structures 614, 916, 1216, 1316c, 1416c, 1516c).

[0247] Process 1700 may include additional implementations, such as any single implementation, or any combination of implementations described below and / or in conjunction with one or more other processes described elsewhere herein.

[0248] In a first embodiment, the plurality of structures include a plurality of convex structures, wherein at least one of these convex structures has a width (n) of about 30 nanometers to about 200 nanometers, and wherein the spacing (m) between two of these convex structures is about 85 nanometers to about 180 nanometers. In a second embodiment, whether alone or in combination with the first embodiment, the plurality of structures include a plurality of concave structures, wherein at least one of these concave structures has a width (y) of about 30 nanometers to about 200 nanometers, and wherein the spacing (x) between two of these concave structures is about 85 nanometers to about 180 nanometers.

[0249] In a third embodiment, whether alone or in combination with one or more of the first and second embodiments, depositing a polydimethylsiloxane layer includes depositing the polydimethylsiloxane layer in a liquid phase, wherein forming multiple structures includes pressing an anodic aluminum oxide template into the polydimethylsiloxane layer when the polydimethylsiloxane layer is in a liquid phase. In a fourth embodiment, whether alone or in combination with one or more of the first to third embodiments, depositing a polydimethylsiloxane layer includes depositing a polydimethylsiloxane layer over the color filter layers (color filter layers 404, 504, 604, 704, 804, 904, 1004, 1104, 1204, 1304, 1404, 1504) of an image sensor.

[0250] In the fifth embodiment, whether alone or in combination with one or more of the first to fourth embodiments, depositing a polydimethylsiloxane layer includes depositing a polydimethylsiloxane layer beneath the color filter layers (color filter layers 404, 504, 604, 704, 804, 904, 1004, 1104, 1204, 1304, 1404, 1504) of the image sensor. In the sixth embodiment, whether alone or in combination with one or more of the first to fifth embodiments, forming a plurality of structures in the polydimethylsiloxane layer includes forming a plurality of convex structures in a first portion (parts 1316b, 1416b, 1516b) of the polydimethylsiloxane layer and forming a plurality of concave structures in a second portion (parts 1316c, 1416c, 1516c) of the polydimethylsiloxane layer adjacent to the first portion, wherein the method further includes forming a flat surface in a third portion (parts 1316a, 1416a, 1516a) of the polydimethylsiloxane layer adjacent to the first or second portion.

[0251] Although Figure 17 The example block shows process 1700, but in some implementations, it is more... Figure 17 The blocks depicted in the process 1700 may include additional blocks, fewer blocks, different blocks, or blocks arranged differently. Alternatively, two or more of the blocks in process 1700 may be performed in parallel.

[0252] Therefore, an image sensor (e.g., a complementary metal-oxide-semiconductor image sensor) can include a subwavelength, hydrophobic, and / or antireflective polydimethylsiloxane layer. This polydimethylsiloxane layer can be fabricated to include a surface with multiple nanostructures (e.g., an array of convex protrusions and / or an array of concave depressions). The nanostructures can be formed using a porous anodic aluminum oxide template, which uses multiple nanopores to form an array of convex protrusions and / or an array of concave depressions. These nanostructures can each have a width smaller than the wavelength of the incident light to be collected by the image sensor, thereby increasing the angle of incidence of the incident light that the image sensor can collect, thus increasing light absorption. This can improve the quantum efficiency and sensitivity of the image sensor.

[0253] As described in more detail above, some embodiments described herein provide a pixel array. This pixel array includes a pixel sensor and a polydimethylsiloxane layer located above the pixel sensor. The surface of the polydimethylsiloxane layer includes multiple structures, each having a width smaller than the wavelength of the incident light to be sensed by the pixel sensor.

[0254] According to some embodiments, these structures may include a plurality of convex structures. According to some embodiments, these structures may include a plurality of concave structures. According to some embodiments, a first subset of these structures includes one or more convex structures, and a second subset of these structures includes one or more concave structures. According to some embodiments, the pixel array further includes a microlens layer located above the pixel sensor, wherein a polydimethylsiloxane layer is located above the microlens layer. According to some embodiments, the pixel array further includes a microlens layer located above the pixel sensor, wherein a polydimethylsiloxane layer is located below the microlens layer. According to some embodiments, the pixel array further includes a color filter layer located above the pixel sensor, and a microlens layer located above the color filter layer, wherein a polydimethylsiloxane layer is located below and below the color filter layer. According to some embodiments, the pixel array further includes a color filter layer located above the pixel sensor, and a microlens layer located above the color filter layer, wherein a polydimethylsiloxane layer is located below and above the color filter layer.

[0255] As described in more detail above, some embodiments described herein provide a method for manufacturing a pixel array. This method includes depositing a polydimethylsiloxane layer over a pixel array of an image sensor. This method includes using an anodized aluminum oxide template to form a plurality of structures in the polydimethylsiloxane layer, wherein these structures include at least one of a plurality of convex structures or a plurality of concave structures.

[0256] According to some embodiments, these structures include a plurality of convex structures, wherein at least one of the convex structures has a width of about 30 nanometers to about 200 nanometers, and the spacing between two convex structures is about 85 nanometers to about 180 nanometers. According to some embodiments, these structures include a plurality of concave structures, wherein at least one of the concave structures has a width of about 30 nanometers to about 200 nanometers, and the spacing between two concave structures is about 85 nanometers to about 180 nanometers. According to some embodiments, depositing a polydimethylsiloxane layer includes depositing a polydimethylsiloxane layer in a liquid phase, wherein forming these structures includes pressing an anodic aluminum oxide template into the polydimethylsiloxane layer while the polydimethylsiloxane layer is in the liquid phase. According to some embodiments, depositing a polydimethylsiloxane layer includes depositing a polydimethylsiloxane layer above a color filter layer of an image sensor. According to some embodiments, depositing a polydimethylsiloxane layer includes depositing a polydimethylsiloxane layer below a color filter layer of an image sensor. According to some embodiments, forming these structures in a polydimethylsiloxane layer includes forming a plurality of convex structures in a first portion of the polydimethylsiloxane layer and forming a plurality of concave structures in a second portion of the polydimethylsiloxane layer adjacent to the first portion, and further includes forming a flat surface in a third portion of the polydimethylsiloxane layer adjacent to the first or second portion.

[0257] As described in more detail above, some embodiments described herein provide a pixel array. This pixel array includes a pixel sensor and a polydimethylsiloxane antireflective coating located above the pixel sensor. The polydimethylsiloxane antireflective coating includes a first portion having a flat surface. The polydimethylsiloxane antireflective coating includes a second portion having a non-flat surface, the non-flat surface comprising a plurality of structures, each having a width smaller than the wavelength of the incident light to be sensed by the pixel sensor.

[0258] According to some embodiments, the focal length of the first portion is different from the focal length of the second portion. According to some embodiments, the pixel array further includes a third portion having another non-planar surface, the non-planar surface including other structures all having widths smaller than the wavelength of the incident light to be sensed by the pixel sensor, wherein the focal lengths of the first portion, the second portion, and the third portion are different. According to some embodiments, these structures include a plurality of convex structures, wherein other such structures include a plurality of concave structures, wherein the first portion and the second portion are adjacent portions while the first portion and the third portion are non-adjacent portions. According to some embodiments, these structures include a plurality of convex structures, wherein other such structures include a plurality of concave structures, wherein the first portion and the second portion are non-adjacent portions while the first portion and the third portion are adjacent portions.

[0259] The foregoing disclosure outlines the features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis to design or modify other processes and structures to achieve the same purpose and / or the same advantages of the embodiments described herein. Those skilled in the art should also understand that this equivalent architecture does not depart from the spirit and scope of this disclosure, and that they can make various changes, substitutions, and modifications therein without departing from the spirit and scope of this disclosure.

Claims

1. A pixel array, characterized in that, This pixel array contains: One-pixel sensor; and A polydimethylsiloxane layer is located above the pixel sensor. One surface of the polydimethylsiloxane layer includes a plurality of structures, each of which has a width smaller than a wavelength of an incident light to be sensed by the pixel sensor, and the plurality of structures include a plurality of convex structures and a plurality of concave structures.

2. The pixel array according to claim 1, characterized in that... Each of the plurality of convex structures has the same width.

3. The pixel array according to claim 1, characterized in that... Each of the plurality of concave structures has the same width.

4. The pixel array according to claim 1, characterized in that... The plurality of convex structures and the plurality of concave structures are respectively located in different pixel regions of the pixel array.

5. The pixel array according to claim 1, characterized in that... Also includes: A microlens layer is located above the pixel sensor. The polydimethylsiloxane layer is located above the microlens layer.

6. The pixel array according to claim 1, characterized in that... Also includes: A microlens layer is located above the pixel sensor. The polydimethylsiloxane layer is located below the microlens layer.

7. The pixel array according to claim 1, characterized in that... Also includes: A color filter layer is located above the pixel sensor; and A microlens layer is located above the color filter layer. The polydimethylsiloxane layer is located below the microlens layer, and The polydimethylsiloxane layer is located below the color filter layer.

8. The pixel array according to claim 1, characterized in that... Also includes: A color filter layer is located above the pixel sensor; and A microlens layer is located above the color filter layer. The polydimethylsiloxane layer is located below the microlens layer, and The polydimethylsiloxane layer is located above the color filter layer.

9. A method for manufacturing a pixel array, characterized in that, The method includes: Deposit a polydimethylsiloxane layer over a pixel array of an image sensor; and Multiple structures were formed in the polydimethylsiloxane layer using an anodic aluminum oxide template. The plurality of structures include: Multiple convex structures, and Multiple concave structures.

10. The method according to claim 9, characterized in that... At least one of the plurality of convex structures has a width of 30 nanometers to 200 nanometers, and The spacing between two of the plurality of convex structures is 85 nanometers to 180 nanometers.

11. The method according to claim 9, characterized in that... At least one of the plurality of concave structures has a width of 30 nanometers to 200 nanometers, and The spacing between two of the plurality of concave structures is 85 nanometers to 180 nanometers.

12. The method according to claim 9, characterized in that... The deposition of this polydimethylsiloxane layer comprises: The polydimethylsiloxane layer is deposited in a liquid phase; and The formation of the plurality of structures includes: When the polydimethylsiloxane layer is in the liquid phase, the anodic aluminum oxide template is pressed into the polydimethylsiloxane layer.

13. The method according to claim 9, characterized in that... The deposition of this polydimethylsiloxane layer comprises: The polydimethylsiloxane layer is deposited on top of a color filter layer of the image sensor.

14. The method according to claim 9, characterized in that... The deposition of this polydimethylsiloxane layer comprises: The polydimethylsiloxane layer is deposited beneath a color filter layer of the image sensor.

15. The method according to claim 9, characterized in that... The plurality of structures formed within the polydimethylsiloxane layer include: The plurality of convex structures are formed in a first portion of the polydimethylsiloxane layer; and The plurality of concave structures are formed in a second portion of the polydimethylsiloxane layer adjacent to the first portion; and The method also includes: A flat surface is formed in a third portion of the polydimethylsiloxane layer adjacent to the first portion or the second portion.

16. A pixel array, characterized in that, This pixel array contains: One-pixel sensor; and A polydimethylsiloxane antireflective coating, located above the pixel sensor, comprises: The first part has a flat surface; A second portion has a non-planar surface comprising a plurality of structures, each of which has a width smaller than a wavelength of an incident light to be sensed by the pixel sensor, the plurality of structures comprising a plurality of convex structures; and A third part has another non-flat surface, which includes a plurality of other structures, and the plurality of other structures include a plurality of concave structures.

17. The pixel array according to claim 16, characterized in that... The focal length of the first part is different from that of the second part.

18. The pixel array according to claim 16, characterized in that: Each of the other structures has a width smaller than the wavelength of the incident light to be sensed by the pixel sensor. The focal lengths of the first part, the second part, and the third part are different focal lengths.

19. The pixel array according to claim 18, characterized in that... The first part and the second part are adjacent parts; and The first part and the third part are not adjacent.

20. The pixel array according to claim 18, characterized in that... The first part and the second part are not adjacent; and The first part and the third part are adjacent parts.

Images