Semiconductor structure

Abstract

The application relates to a semiconductor structure. The semiconductor structure comprises a substrate, an optical element located above the substrate, and a support element for supporting the optical element, wherein the support element is connected to the substrate by a first adhesive. The application can at least greatly reduce the tolerance sources between optical elements.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a semiconductor structure. Background Technology

[0002] With the evolution of packaging technology, various packaging structures are constantly being innovated, and the overall package size is becoming smaller and smaller. Taking traditional optical sensors as an example, a lens and a lid are usually combined to form a lens module to facilitate the transmission of external light to the sensor.

[0003] Current ambient light sensors require light-gathering calibration via MLA (microlens array). The tolerances between MLAs significantly affect the light-gathering results; therefore, smaller tolerances are better. These tolerances originate from factors including: MLA manufacturing, bond-line thickness (BLT) between MLAs, cover injection molding, and chip grinding. BLT tolerances are limited by the characteristics of the selected adhesive (some adhesives contain fibers) and their applicable processes, making it impossible to achieve a zero tolerance margin. MLA manufacturing tolerances depend on mold precision, while lid tolerances are influenced by mold manufacturing capabilities and the shrinkage rate of the raw material after injection molding. Chip tolerances depend on grinding precision. Currently, in-stock MLA modules are already assembled, but they are expensive.

[0004] On the other hand, such as Figure 1 As shown, the gap 19 between the pixels 12 of the MLA10 is also required to be kept at an allowable distance, typically 95 micrometers. However, existing methods struggle to maintain the gap between each lens at a uniform distance. Summary of the Invention

[0005] To address the issue of large tolerances between MLAs in related technologies, this invention proposes a semiconductor structure that can significantly reduce the sources of tolerance between optical components.

[0006] According to one aspect of the present invention, a semiconductor structure is provided, comprising: a substrate; an optical element located above the substrate; and a support element for supporting the optical element, wherein the support element is connected to the substrate via a first colloid.

[0007] In some embodiments, the optical element includes a first optical element and a second optical element located below the first optical element, and the support element includes a first surface for supporting the first optical element.

[0008] In some embodiments, a gap is provided between the support element and the first optical element above the first surface, and a second colloid connecting the support element and the first optical element is disposed within the gap.

[0009] In some embodiments, the sidewall of the first optical element is aligned with the corresponding sidewall of the second optical element.

[0010] In some embodiments, the sidewall of the first optical element is offset laterally from the sidewall of the second optical element, and the spacing between the first optical element and the support element is offset laterally from the spacing between the second optical element and the support element.

[0011] In some embodiments, the support element further includes a second surface for supporting the second optical element, wherein both the first and second surfaces face away from the substrate.

[0012] In some embodiments, the semiconductor structure further includes: a die located between the optical element and the substrate, a support element surrounding the die, and the support element further defining an opening above the die.

[0013] In some embodiments, the support element includes a spacer located between the first optical element and the second optical element.

[0014] In some embodiments, the support element has a first surface for supporting a first optical element and a second surface for supporting a spacer, wherein a third colloid is disposed between the spacer and the second surface of the support element.

[0015] In some embodiments, a fourth colloid is disposed between the first optical element and the support element. Attached Figure Description

[0016] The various aspects of the invention will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, according to standard industrial practice, the components are not drawn to scale. In fact, the dimensions of the components may be arbitrarily increased or decreased for clarity of discussion.

[0017] Figure 1 This is a schematic diagram showing two MLAs set up relative to each other.

[0018] Figures 2 to 6 This is a schematic diagram of a semiconductor structure according to various embodiments of the present invention. Specific Implementation

[0019] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements will be described below to simplify the invention. These are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component above or on a second component can include embodiments where the first and second components are in direct contact, or embodiments where an additional component is formed between the first and second components such that the first and second components are not in direct contact. Furthermore, reference numerals and / or letters may be repeated throughout the various instances. Such repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0020] Embodiments of the present invention provide a semiconductor structure. Several embodiments of the present invention will now be described with reference to the accompanying drawings.

[0021] Figure 2 This is a schematic diagram of a semiconductor structure 200 according to an embodiment of the present invention. (Reference) Figure 2 As shown, optical element 220 is disposed above substrate 210. Optical element 220 may include MLA element or other suitable optical element. Support element 230 is connected to substrate 210 and is used to support optical element 220. Support element 230 is connected to substrate 210 by first adhesive 215.

[0022] In the semiconductor structure 200 of the present invention, the optical element 220 is supported by the support element 230, thereby controlling variables such as height and displacement between the optical elements 220, allowing the optical elements 220 to be completed in the packaging process. The high BLT (Block Joint Tolerance) of the bonding between the support element 230 and the substrate 210 offsets various sources of tolerance between the original optical elements; the tolerance of the present invention only needs to consider the fabrication capability of the support element 230. Therefore, the structure provided by the present invention has significantly reduced sources of tolerance, resulting in effective improvement in tolerance. Furthermore, the difference between the maximum and minimum distances between the pixels of the optical element 220 can be reduced; for example, the distance between pixels can be kept within the range of 95 micrometers to 110 micrometers, thereby improving the performance of the optical elements.

[0023] Continue to refer to Figure 2 The optical element 220 includes a first optical element 222 and a second optical element 224 located below the first optical element 222. Either the first optical element 222 or the second optical element 224 can be an MLA element.

[0024] The support element 230 has a first surface 231 for supporting a first optical element 222. The support element 230 also has a second surface 232 for supporting a second optical element 224. In this embodiment, the first surface 231 faces away from the substrate 210, and the second surface 232 faces the substrate 210. Specifically, the support element 230 may be configured to have a first protrusion 234 that protrudes laterally, the first surface 231 for supporting the first optical element 222 being the surface of the first protrusion 234 facing away from the substrate 210. The second surface 232 for supporting the second optical element 224 is the surface of the first protrusion 234 opposite to the first surface 231.

[0025] The lower surface of the first optical element 222 can be in direct contact with the first surface 231. The upper surface of the second optical element 224 can be in direct contact with the second surface 232. The lower surface of the second optical element 224 faces the substrate 210. In some embodiments, such as Figure 2 As shown, a die 240 may be disposed above the substrate 210 and below the second optical element 224. In some embodiments, the die 240 may be an ASIC die. The lower surface of the second optical element 224 may be connected to the die 240, and in some embodiments, the upper surface of the die 240 is the active surface, and the lower surface of the second optical element 224 is connected to the active surface of the die 240.

[0026] The support element 230 surrounds the die 240, and the support element 230 also defines an opening 223 above the die 240. Figure 2 In the illustrated embodiment, the support element 230 may include a vertical portion 236 extending in a vertical direction and connected to a first protrusion 234. The support element 230 is connected to the substrate 210 via the vertical portion 236, and a first colloid 215 is located between the substrate 210 and the vertical portion 236. The vertical portion 236 of the support element 230 is disposed around the die 240, and an opening 223 is defined between the opposing ends of the first protrusion 234 above the die 240.

[0027] A space 229 is provided between the support element 230 and the first optical element 222 above the first surface 231. A second adhesive 225 is disposed within the space 229 to connect the support element 230 and the first optical element 222. The second adhesive 225 connects to and contacts the support element 230 and the first optical element 222. More specifically, as... Figure 2As shown, the support element 230 also has a second protrusion 238 above the first protrusion 234 and in contact with both the vertical portion 236 and the first protrusion 234. The gap 229 may be defined by the second protrusion 238 and the sidewall of the first optical element 222. In this embodiment, the sidewall of the first optical element 222 is aligned with the sidewall of the second optical element 224. The gap 229 between the first optical element 222 and the support element 230 (and the second protrusion 238) is smaller than the gap between the second optical element 224 and the support element 230 (and the vertical portion 236).

[0028] In some embodiments, after the second optical element 224 is attached to the die 240, the support element 230 can be directly pressed onto the second optical element 224, and then the first optical element 222 can be placed on the support element 230 to form a second colloid 225 on the sidewall of the first optical element 222.

[0029] Figure 3 This is a schematic diagram of a semiconductor structure 300 according to an embodiment of the present invention. Figure 3 As shown, the support element 230 includes a vertical portion 236, a first protrusion 234 connected to the vertical portion 236, and a second protrusion 238 located below the first protrusion 234. In this embodiment, the first surface 231 of the support element 230 for supporting the first optical element 222 is the upper surface of the first protrusion 234, and the second surface 232 for supporting the second optical element 224 is the upper surface of the second protrusion 238. Both the first surface 231 and the second surface 232 face away from the substrate 210.

[0030] The width of the second protrusion 238 is greater than the width of the first protrusion 234, that is, the protrusion distance of the second protrusion 238 is greater than that of the first protrusion 234. A second colloid 225 is disposed between the first optical element 222 and the vertical portion 236 of the support element 230 and above the first protrusion 234. In this embodiment, a second colloid 225 is also disposed between the second optical element 224 above the second protrusion 238 and the first protrusion 234. In this embodiment, the width of the first optical element 222 is greater than the width of the second optical element 224. The sidewalls of the first optical element 222 and the corresponding sidewalls of the second optical element 224 are laterally offset (misaligned). Correspondingly, the interval 229 between the first optical element 222 and the support element 230 (and the vertical portion 236) is laterally offset from the interval between the second optical element 224 and the support element 230 (and the first protrusion 234). By configuring the first protrusion 234 and the second protrusion 238, the support element 230 is designed in a stepped shape facing the first optical element 222 and the second optical element 224, thereby placing the first optical element 222 and the second optical element 224 at different heights and forming a second colloid 225 at their respective sidewalls.

[0031] Figure 3 Other aspects of the semiconductor structure shown are related to... Figure 2 The discussion is similar, and for the sake of brevity, it will not be repeated here.

[0032] Figure 4 This is a schematic diagram of a semiconductor structure 400 according to an embodiment of the present invention. Figure 4 As shown, the support element 230 includes a first protrusion 234, a second protrusion 238 located below the first protrusion 234, and a vertical portion 236 connected below the second protrusion 238. In this embodiment, the first surface 231 of the support element 230 for supporting the first optical element 222 is the lower surface of the first protrusion 234. The second surface 232 of the support element 230 for supporting the second optical element 224 is the lower surface of the second protrusion 238, and both the first surface 231 and the second surface 232 face the substrate 210.

[0033] The width of the second protrusion 238 is smaller than the width of the first protrusion 234, that is, the protrusion distance of the first protrusion 234 is greater than that of the second protrusion 238. At the first surface 231, the second colloid 225 is disposed within the gap 229 between the first optical element 222 and the second protrusion 238 of the support element 230. At the second surface 232, the second colloid 225 is also disposed within the gap 228 between the second optical element 224 and the vertical portion 236 of the support element 230. In this embodiment, the width of the first optical element 222 is smaller than the width of the second optical element 224. The sidewalls of the first optical element 222 and the sidewalls of the second optical element 224 are offset laterally (misaligned).

[0034] Figure 4 Other aspects of the semiconductor structure shown are related to... Figure 2 The discussion is similar, and for the sake of brevity, it will not be repeated here.

[0035] Figure 5 This is a schematic diagram of a semiconductor structure 500 according to an embodiment of the present invention. Figure 5 As shown, the support element 230 includes a vertical portion 236 and a first protrusion 234 connected to the vertical portion 236. The lower surface of the first protrusion 234 serves as a first surface 231 supporting the first optical element 222. The first optical element 222 and the second optical element 224 are disposed between the first protrusion 234 and the die 240. In this embodiment, a spacer 260 is disposed between the first optical element 222 and the second optical element 224. The spacer 260 can be used for height control between the first optical element 222 and the second optical element 224.

[0036] Figure 6 This is a schematic diagram of a semiconductor structure 600 according to an embodiment of the present invention. Figure 6 As shown, the support element 230 includes a vertical portion 236, a first protrusion 234 connected to the vertical portion 236, and a second protrusion 238 located below the first protrusion 234. In this embodiment, the first surface 231 of the support element 230 for supporting the first optical element 222 is the upper surface of the first protrusion 234, and the second surface 232 for supporting the second optical element 224 is the upper surface of the second protrusion 238. Both the first surface 231 and the second surface 232 face away from the substrate 210. A spacer 260 is disposed between the first optical element 222 and the second optical element 224. The spacer 260 can be used for height control between the first optical element 222 and the second optical element 224.

[0037] A first optical element 222 is located above a first protrusion 234, and a second optical element 224 is located above a second protrusion 238. The width of the first optical element 222 is greater than the width of the second optical element 224. The upper surface of the spacer 260 contacts the lower surface of the first optical element 222. A portion of the lower surface of the spacer 260 contacts the upper surface of the second optical element 224. The lower surface of another portion of the spacer 260 is disposed above the second surface 232, and the spacer 260 is connected to the second surface 232 by a third adhesive 235. Furthermore, the first optical element 222 extends laterally beyond the sidewall of the spacer 260 to above the first protrusion 234, and is connected to the first surface 231 by a fourth adhesive 245, which also extends from the vertical portion 236 of the support element 230 to contact the spacer 260.

[0038] In the semiconductor structure described above in this invention, the support element 230 abuts and supports the first optical element 222 and the second optical element 224 (such as an MLA element), thereby controlling variables such as height and displacement between the first optical element 222 and the second optical element 224, allowing the optical elements to be completed in the packaging process. The original sources of tolerance between optical elements (including, for example, the ASIC die, the die's BLT, the bottom optical element, and the bottom optical element's BLT) are offset by the high BLT of the bonding between the support element 230 and the substrate 210. Tolerances only need to consider the fabrication capability of the support element, significantly reducing the sources of tolerance.

[0039] The foregoing summary outlines features of several embodiments that enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that other processes and structures can be readily designed or modified based on this invention to achieve the same objectives and / or benefits as the embodiments described herein. Those skilled in the art should also recognize that these equivalent structures do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made without departing from the spirit and scope of the invention.

Claims

1. A semiconductor structure, characterized in that, include: substrate; A first optical element and a second optical element are located above the substrate, and the second optical element is located below the first optical element; A support element for supporting the optical element, and the support element is connected to the substrate by a first adhesive. The support element includes a first protrusion, a second protrusion located below the first protrusion, and a vertical portion connected below the second protrusion. The first surface of the support element for supporting the first optical element is the lower surface of the first protrusion facing the substrate, and the second surface of the support element for supporting the second optical element is the lower surface of the second protrusion facing the substrate. The die is located between the second optical element and the substrate; The width of the second protrusion is smaller than the width of the first protrusion. At the first surface, the second adhesive is disposed within the gap between the first optical element and the second protrusion of the support element. At the second surface, the second adhesive is also disposed within the gap between the second optical element and the vertical portion of the support element. In this configuration, the surfaces of the first and second optical elements facing the substrate do not contact the supporting element. Wherein, the first optical element and the second optical element are both microlens array elements, and the first top surface of the first optical element having pixels and the second top surface of the second optical element having pixels face each other. The sidewall of the second protrusion defines the distance between the first bottom surface of the first optical element away from the first top surface and the second top surface of the second optical element. The die directly contacts the second bottom surface of the second optical element away from the second top surface.

2. The semiconductor structure according to claim 1, characterized in that, The sidewall of the first optical element is not aligned with the corresponding sidewall of the second optical element.

3. The semiconductor structure according to claim 1, characterized in that, The sidewall of the first optical element is offset laterally from the sidewall of the second optical element, and the spacing between the first optical element and the support element is offset laterally from the spacing between the second optical element and the support element.

4. The semiconductor structure according to claim 1, characterized in that, The support element surrounds the die, and the support element also defines an opening above the die.

5. A semiconductor structure, characterized in that, include: substrate; A first optical element and a second optical element are located above the substrate, and the second optical element is located below the first optical element; A support element for supporting the optical element, the support element being connected to the substrate via a first adhesive, wherein the support element includes a vertical portion and a first protrusion connected to the vertical portion, the lower surface of the first protrusion facing the substrate serving as a first surface for supporting the first optical element, and the first optical element and a second optical element being disposed between the first protrusion and the substrate; and The die is located between the second optical element and the substrate; A spacer is located between the first optical element and the second optical element, and the spacer is spaced apart from the support element; In this configuration, both the first optical element and the second optical element are microlens array elements, and the first top surface of the first optical element having pixels and the second top surface of the second optical element having pixels face each other. The first bottom surface of the first optical element, which is away from the first top surface, directly contacts the first surface of the first protrusion, and the die directly contacts the second bottom surface of the second optical element, which is away from the second top surface.

6. A semiconductor structure, characterized in that, include: substrate; A first optical element and a second optical element are located above the substrate, and the second optical element is located below the first optical element; A support element for supporting the optical element, and the support element is connected to the substrate by a first colloid, the first colloid absorbing the source of tolerance between the first optical element and the second optical element; as well as A spacer is disposed between the first optical element and the second optical element; The supporting element has a first surface for supporting the first optical element and a second surface for supporting the spacer. A third colloid is disposed between the spacer and the second surface of the support element, and a fourth colloid is disposed between the first optical element and the support element. The fourth colloid extends to the sidewall of the spacer, and the first optical element extends laterally beyond the sidewall of the spacer to above the protrusion of the support element.

7. The semiconductor structure according to claim 6, characterized in that, The sidewall of the first optical element is offset laterally from the sidewall of the second optical element.

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