Plasma processing system, plasma processing apparatus, and edge ring replacement method

Abstract

This invention provides a plasma processing system, a plasma processing apparatus, and a method for replacing edge rings. The plasma processing system includes a plasma processing apparatus and a depressurization and conveying device connected thereto. The plasma processing apparatus includes: a processing container capable of depressurization; a support platform disposed within the processing container for carrying an edge ring assembly; and a transfer component. The depressurization and conveying device includes: a depressurization and conveying chamber connected to the processing container; and a conveying mechanism for conveying the edge ring assembly between the processing container and the depressurization and conveying chamber. The plasma processing system is capable of: preventing the processing container from opening to the atmosphere; having the heat transfer plate side of the edge ring assembly supported by the conveying mechanism and moving the edge ring assembly upwards towards the support platform; having the transfer component receive the edge ring assembly from the conveying mechanism and support the heat transfer plate side of the edge ring assembly; and having the support platform receive the edge ring assembly from the transfer component such that the edge ring is placed on the support platform with the heat transfer plate in between.

Description

Technical Field

[0001] This invention relates to a plasma processing system, a plasma processing apparatus, and a method for replacing edge rings. Background Technology

[0002] Patent Document 1 discloses a mounting apparatus comprising: a wafer chuck with a built-in refrigerant flow path for mounting a wafer; and a focusing ring disposed on the outer periphery of the mounting surface of the wafer chuck. Furthermore, in this mounting apparatus, a heat transfer medium is provided between the wafer chuck and the focusing ring, and a fixing mechanism is provided for pressing and fixing the focusing ring onto the wafer chuck.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2002-16126 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technology of the present invention enables the replacement of the edge ring and heat transfer plate in a plasma processing apparatus in which a heat transfer plate is disposed between the edge ring and the substrate support without exposing the processing container of the plasma processing apparatus to the atmosphere.

[0008] Means for solving technical problems

[0009] One aspect of the present invention is a plasma processing system, characterized in that it comprises: a plasma processing apparatus for plasma processing a substrate; and a depressurization conveying device connected to the plasma processing apparatus, the plasma processing apparatus comprising: a processing container capable of depressurization; a support platform disposed within the processing container for holding an edge ring assembly, the edge ring assembly being formed by attaching heat transfer plates to an edge ring configured to surround a substrate placed on the support platform; and a transfer member for raising and lowering the edge ring assembly for transferring the edge ring assembly between the plasma processing apparatus and the depressurization conveying device, the depressurization conveying device being... The pressure delivery device includes: a pressure-reducing delivery chamber connected to the processing container and capable of reducing pressure; and a delivery mechanism for delivering the edge ring assembly between the processing container and the pressure-reducing delivery chamber, wherein the plasma processing system is capable of: keeping the processing container closed to the atmosphere; having the heat transfer plate side of the edge ring assembly supported by the delivery mechanism and moving the edge ring assembly upwards toward the support platform; having the edge ring assembly received from the delivery mechanism by the transfer member and supporting the heat transfer plate side of the edge ring assembly; and having the edge ring assembly received from the transfer member by the support platform such that the edge ring is placed on the support platform with the heat transfer plate in between.

[0010] Invention Effects

[0011] Using this invention, in a plasma processing apparatus in which a heat transfer plate is disposed between the edge ring and the substrate support, the edge ring and heat transfer plate can be replaced without exposing the processing container of the plasma processing apparatus to the atmosphere. Attached Figure Description

[0012] Figure 1 This is a plan view showing the general configuration of the plasma processing system according to this embodiment.

[0013] Figure 2 It is a three-dimensional diagram showing the approximate structure of the container.

[0014] Figure 3 It is a partially enlarged cross-sectional view showing the approximate structure of the container.

[0015] Figure 4 This is a top view showing the general structure of the conveyor arm.

[0016] Figure 5 This is a side view showing the general structure of the conveyor arm.

[0017] Figure 6 It is a longitudinal cross-sectional view showing the approximate structure of the processing components.

[0018] Figure 7 yes Figure 6A magnified view of a portion of the image.

[0019] Figure 8 This is a diagram showing an example of the configuration position of the reversing mechanism.

[0020] Figure 9 This is another example of the configuration position of the reversing mechanism.

[0021] Figure 10 This is a diagram showing an example of a storage component.

[0022] Figure 11 This is a diagram showing another example of a storage component.

[0023] Figure 12 This is a diagram showing another example of a storage component.

[0024] Figure 13 This is a diagram illustrating another example of a lifting pin.

[0025] Explanation of reference numerals in the attached figures

[0026] 1. Plasma processing system, 50. Conveying assembly, 51, 313. Pressure reducing conveying chamber, 60. Processing assembly, 70, 320. Conveying mechanism, 100. Plasma processing chamber, 101. Wafer support stage, 107. Lifting pin, E. Edge ring assembly, E1. Edge ring, E2. Heat transfer plate, W. Wafer. Detailed Implementation

[0027] In the manufacturing process of semiconductor devices, plasma treatment, such as etching, is used to treat substrates of semiconductor wafers (hereinafter referred to as "wafers"). This plasma treatment is performed with the substrate placed on a substrate support table inside a depressurized processing container.

[0028] In order to obtain good and uniform plasma processing results in the central and peripheral parts of the substrate, a ring-shaped component (hereinafter referred to as "edge ring") that appears as a ring when viewed from above is sometimes placed on the substrate support in a manner that surrounds the substrate on the substrate support.

[0029] Furthermore, the temperature of the substrate support stage is adjusted using a temperature adjustment mechanism, thereby adjusting the substrate to the desired temperature.

[0030] The edge ring is also temperature-controlled via a substrate support. However, in a depressurized processing chamber, simply placing the edge ring on the substrate support creates a vacuum insulation layer between the substrate support and the edge ring, reducing heat transfer between them. Therefore, it becomes difficult to regulate the edge ring's temperature to the desired level via the substrate support.

[0031] Therefore, a technique for arranging heat transfer plates between the edge ring and the substrate support was proposed (see Patent Document 1).

[0032] However, in the past, when the edge ring needed to be replaced due to wear, the processing container was temporarily opened to the atmosphere, and the edge ring was replaced manually by the operator. However, when the processing container was opened to the atmosphere, there was a long time between replacement and the resumption of plasma processing.

[0033] Furthermore, in cases where a heat transfer plate is arranged between the edge ring and the substrate support, as disclosed in Patent Document 1, the heat transfer plate must also be replaced when the edge ring is replaced. This is because the heat transfer plate deteriorates due to plasma treatment.

[0034] Therefore, the technology of the present invention enables the replacement of the edge ring and heat transfer plate in a plasma processing apparatus in which a heat transfer plate is disposed between the edge ring and the substrate support to be replaced without opening the processing container of the plasma processing apparatus to the atmosphere.

[0035] The plasma processing system, plasma processing apparatus, and edge ring replacement method of this embodiment will now be described with reference to the accompanying drawings. In this specification and the accompanying drawings, elements having substantially the same functional configuration are omitted from repeated description by using the same reference numerals.

[0036] Figure 1 This is a plan view showing the general configuration of the plasma processing system according to this embodiment. Figure 2 and Figure 3 These are three-dimensional diagrams and enlarged cross-sectional views showing the general structure of the container described later. Figure 4 and Figure 5 These are top and side views showing the general structure of the conveyor arm, which will be described later.

[0037] exist Figure 1 In the plasma processing system 1, plasma processing, such as etching, can be performed on the wafer W, which serves as a substrate.

[0038] like Figure 1 As shown, the plasma processing system 1 includes an atmospheric section 10 and a depressurization section 11, which are connected as a single unit via load locking components 20 and 21. The atmospheric section 10 includes an atmospheric component capable of performing desired processing on the wafer W under atmospheric pressure. The depressurization section 11 includes a processing component 60 capable of performing desired processing on the wafer W under a depressurized atmosphere (vacuum atmosphere).

[0039] Load locking components 20 and 21 are configured to connect the loading component 30 included in the atmospheric section 10 and the transfer component 50 included in the pressure reducing section 11 via a gate valve (not shown). Load locking components 20 and 21 are configured to temporarily hold the wafer W or an edge ring assembly E formed by attaching a heat transfer sheet E2 to the edge ring E1 (see reference). Figure 3 (etc.). For example, load locking assemblies 20 and 21 have support pins (not shown) as rod-shaped members for supporting the heat transfer plate E2 side of the edge ring assembly E. In addition, load locking assemblies 20 and 21 are configured to switch the interior to atmospheric pressure atmosphere and depressurized atmosphere.

[0040] The atmospheric section 10 includes: a loading assembly 30 serving as an atmospheric transport device, comprising a transport mechanism 40 described later; and a loading port 32 serving as a container loading section for holding containers 31a and 31b. Container 31a is configured to hold multiple wafers W and can be transported by a transport device (not shown) such as an OHT (Overhead Hoist Transfer) located outside the plasma processing system 1. Container 31b is similarly configured to hold multiple edge rings E1 and can be transported by a transport device (not shown) such as an OHT.

[0041] Container 31b is specifically configured to accommodate multiple edge ring assemblies E under atmospheric pressure. For example... Figure 2 As shown, container 31b has: a box-shaped main body F1 with an opening at the front; and a lid (not shown) for closing the opening of the main body F1. On the two side walls of the main body F1, as... Figure 3 As shown, multiple shelves F11 are arranged along the vertical direction. The edge ring assembly E is housed in the container 31b, for example, with its peripheral heat transfer plate E2 side supported by a shelf F11 on one side wall and another shelf F11 on the same height as it. That is, in the container 31b, the space between adjacent shelves F11 in the vertical direction becomes a gap SL into which the edge ring assembly E can be inserted, and the heat transfer plate E2 side of the edge ring assembly E is supported by the upper surface of the shelf F11 forming the lower side of the gap SL.

[0042] The surface of the heat transfer fin E2 side of the container 31b that supports the edge ring assembly E, i.e., the upper surface of the shelf F11, may be subjected to a peelability enhancement treatment. The peelability enhancement treatment will be explained later.

[0043] Return to the description of loading component 30.

[0044] The loading assembly 30 can be connected to an oriented device (not shown) for adjusting the horizontal orientation of the wafer W or the edge ring assembly E, a buffer assembly (not shown) for temporarily accommodating multiple wafers W, etc.

[0045] The loading assembly 30 has a rectangular housing, the interior of which is maintained at atmospheric pressure. For example... Figure 1 As shown, a plurality of loading ports 32, for example, five, are arranged side by side on one side of the long side of the housing constituting the loading assembly 30. Load locking assemblies 20 and 21 are arranged side by side on the other side of the long side of the housing constituting the loading assembly 30.

[0046] A conveying mechanism 40 for conveying wafer W and / or edge ring assembly E is provided inside the loading assembly 30. The conveying mechanism 40 includes: a conveying arm 41 for supporting wafer W and / or edge ring assembly E; a rotary table 42 for rotatably supporting the conveying arm 41; and a base 43 for mounting the rotary table 42. Additionally, a guide rail 44 extending along the long side of the loading assembly 30 is provided inside the loading assembly 30. The base 43 is mounted on the guide rail 44, and the conveying mechanism 40 is movable along the guide rail 44.

[0047] like Figure 4 As shown, the transport arm 41 has a transport pickup 41a at its front end. The transport pickup 41a is a support for supporting the edge ring assembly E. The transport pickup 41a can also support the wafer W. The transport pickup 41a is, for example, as shown in... Figure 5 The heat transfer plate E2 side of the edge ring assembly E is supported as shown. Specifically, the conveyor pickup 41a has, for example, three or more (three in the illustrated example) notched columnar members 41b, the upper surfaces 41c of the notches of these columnar members 41b supporting the heat transfer plate E2 side of the edge ring assembly E. The surface of the conveyor arm 41 that supports the heat transfer plate E2 side of the edge ring assembly E, i.e., the upper surface 41c of the notches of the columnar members 41b, can be subjected to a peelability enhancement treatment. The peelability enhancement treatment will be explained later.

[0048] like Figure 1 As shown, the depressurization unit 11 includes: a conveying assembly 50, which serves as a depressurization conveying device for conveying the wafer W and / or the edge ring assembly E; and a processing assembly 60, which serves as a plasma processing device for performing desired plasma processing on the wafer W conveyed from the conveying assembly 50. The interiors of the conveying assembly 50 and the processing assembly 60 (specifically, the interiors of the depressurization conveying chamber 51 and the plasma processing chamber 100, described later) are each maintained in a depressurized atmosphere. For example, a plurality of processing assemblies 60 are provided relative to one conveying assembly 50. The number and arrangement of the processing assemblies 60 are not limited to this embodiment and can be arbitrarily set, as long as at least one processing assembly is provided for replacing the edge ring assembly E.

[0049] The transfer assembly 50 includes a depressurized transfer chamber 51 with a polygonal (pentagonal in the illustrated example) housing, which is connected to load locking assemblies 20 and 21. The transfer assembly 50 can transfer a wafer W fed into the load locking assembly 20 to a processing assembly 60, and can also discharge the wafer W, which has undergone the desired plasma treatment in the processing assembly 60, to the atmosphere 10 via the load locking assembly 21. Additionally, the transfer assembly 50 can transfer an edge ring assembly E fed into the load locking assembly 20 to a processing assembly 60, and can also discharge the edge ring assembly E, which is to be replaced within the processing assembly 60, to the atmosphere 10 via the load locking assembly 21.

[0050] The processing unit 60 is capable of performing plasma processing on the wafer W, such as etching. Furthermore, the processing unit 60 is connected to the transport unit 50 via a gate valve 61. The configuration of this processing unit 60 will be described later.

[0051] Inside the depressurized transport chamber 51 of the transport assembly 50, a transport mechanism 70 is provided for transporting the wafer W and / or the edge ring assembly E. The transport mechanism 70, like the transport mechanism 40 described above, includes: a transport arm 71 for supporting the wafer W and / or the edge ring assembly E during transport; a rotary table 72 for rotatably supporting the transport arm 71; and a base 73 for mounting the rotary table 72. Additionally, a guide rail 74 extending along the long side of the transport assembly 50 is provided inside the transport assembly 50. The base 73 is mounted on the guide rail 74, and the transport mechanism 70 is movable along the guide rail 74.

[0052] The conveying arm 71 has a conveying pickup at its front end that is the same as the conveying pickup 41a described above. This conveying pickup can support the heat transfer plate E2 side of the edge ring assembly E, or support the wafer W.

[0053] The surface of the heat transfer plate E2 side of the support edge ring assembly E in the conveying arm 71 can also be treated to improve peelability.

[0054] Additionally, as a conveyor pickup for conveyor pickup 41a and / or conveyor arm 71, US20180019107A may be used. Figures 4-6 The transport pickup described herein has multiple protrusions for holding the outer periphery of the wafer W. The protrusions are, for example, truncated cones, and their conical portions abut against the outer periphery of the wafer W to prevent the wafer W from shifting position relative to the transport pickup. Furthermore, the protrusions can abut against the lower surface of the edge ring assembly E via their truncated cone-shaped upper surfaces to support the edge ring assembly E.

[0055] In the transfer assembly 50, the transfer arm 71 is capable of receiving the wafer W or edge ring assembly E held within the load locking assembly 20 and transferring it to the processing assembly 60. Additionally, the transfer arm 71 is capable of receiving the wafer W or edge ring assembly E held within the processing assembly 60 and transferring it to the load locking assembly 21.

[0056] The plasma processing system 1 also includes a control device 80. In one embodiment, the control device 80 is capable of processing computer-executable commands for causing the plasma processing system 1 to perform the various steps described herein. The control device 80 may be configured to control other elements of the plasma processing system 1 to each perform the various steps described herein. In one embodiment, the control device 80 may be part or all of the other elements of the plasma processing system 1. The control device 80 may, for example, include a computer 90. The computer 90 may, for example, include a processing unit (CPU) 91, a storage unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control actions based on programs stored in the storage unit 92. The storage unit 92 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 93 can communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

[0057] Next, the wafer processing performed using the plasma processing system 1 configured as described above will be explained.

[0058] First, the wafer W is removed from the desired container 31a using the transport mechanism 40 and fed into the load locking assembly 20. Then, the load locking assembly 20 is sealed and depressurized. Afterward, the interior of the load locking assembly 20 is connected to the interior of the transport assembly 50.

[0059] Next, the wafer W is held by the transport mechanism 70 and transported from the load locking component 20 to the transport component 50.

[0060] Next, gate valve 61 is opened, and wafer W is fed into the desired processing unit 60 using the transport mechanism 70. Then, gate valve 61 is closed, and the desired processing of wafer W is performed in the processing unit 60. The processing of wafer W in this processing unit 60 will be described later.

[0061] Next, gate valve 61 is opened, and wafer W is delivered from processing component 60 using conveyor mechanism 70. Afterward, gate valve 61 is closed.

[0062] Next, the wafer W is fed into the load locking assembly 21 using the transport mechanism 70. When the wafer W is fed into the load locking assembly 21, the load locking assembly 21 is sealed and opened to the atmosphere. Afterward, the interior of the load locking assembly 21 is connected to the interior of the loading assembly 30.

[0063] Next, the transport mechanism 40 holds the wafer W and returns it from the load locking assembly 21 to the desired container 31a for storage via the loading assembly 30. Thus, the series of wafer processing in the plasma processing system 1 is completed.

[0064] Next, use Figure 6 and Figure 7 The processing component 60 is described below. Figure 6 This is a longitudinal cross-sectional view showing the approximate structure of the processing component 60. Figure 7 yes Figure 6 A magnified view of a portion of the image.

[0065] like Figure 6 As shown, the processing assembly 60 includes a plasma processing chamber 100 serving as a processing container, a gas supply unit 120, an RF (Radio Frequency) power supply unit 130, and an exhaust system 140. The processing assembly 60 also includes a wafer support stage 101 serving as a support platform and an upper electrode 102.

[0066] The wafer support stage 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured to be depressurized. The upper electrode 102 is disposed above the wafer support stage 101 and can function as part of the ceiling of the plasma processing chamber 100.

[0067] The wafer support stage 101 is capable of supporting the wafer W in the plasma processing space 100s. In one embodiment, the wafer support stage 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, a lifting pin 106, and a lifting pin 107. Although not shown in the figures, the wafer support stage 101 includes a temperature control mechanism capable of adjusting at least one of the electrostatic chuck 104 and the wafer W to a target temperature. Additionally, the wafer support stage 101 may have a temperature control mechanism for independently adjusting the edge ring E1 to a target temperature, separate from the wafer W. These temperature control mechanisms may include heaters, flow paths, or combinations thereof. A temperature-regulating fluid such as a refrigerant or heat transfer gas flows in the flow path.

[0068] The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature regulating mechanism described above may be provided on the lower electrode 103.

[0069] An electrostatic chuck 104 is disposed on the lower electrode 103, and can hold both the wafer W and the edge ring E1 by electrostatic force. The upper surface of the central portion of the electrostatic chuck 104 is higher than the upper surface of the peripheral portion. The upper surface 104a of the central portion of the electrostatic chuck 104 is a wafer mounting surface 104a for mounting the wafer W. The upper surface 104b of the peripheral portion of the electrostatic chuck 104 is a ring mounting surface 104b for mounting the edge ring E1.

[0070] The edge ring E1 is an annular component arranged to surround the wafer W placed on the wafer mounting surface 104a at the center of the electrostatic chuck 104. Conductive silicon (Si) or silicon carbide (SiC) can be used as the material for the edge ring E1. Insulating silicon dioxide (SiO2) or the like can also be used. The edge ring E1 is mounted on the ring mounting surface 104b via a heat transfer plate E2.

[0071] The heat transfer plate E2 is a plate-shaped component. When viewed from above, it is ring-shaped. Specifically, it is a ring whose outer diameter is below the outer diameter of the edge ring E1 and whose inner diameter is above the inner diameter of the edge ring E1.

[0072] Furthermore, the heat transfer plate E2 is formed to have good thermal conductivity (e.g., 0.2–5 W / m∈K) and high elasticity. For example, the heat transfer plate E2 can use a heat-resistant organic material as a substrate. A heat-transferring filler is mixed and dispersed in the substrate. The heat-resistant organic material is, for example, a heat-resistant adhesive and / or rubber containing silicon. Alternatively, the heat-transferring filler is, for example, alumina particles.

[0073] When the heat transfer plate E2 is attached to the edge ring E1, for example, it gels and becomes adhesive, and can be attached to the edge ring E1 by utilizing its adhesiveness (adhesive force).

[0074] In this embodiment, a heat transfer plate E2 is pre-attached to the edge ring E1. Furthermore, the edge ring assembly E with the heat transfer plate E2 attached is mounted on the ring mounting surface 104b such that the heat transfer plate E2 side is supported by the ring mounting surface 104b. In this embodiment, the edge ring E1 and the heat transfer plate E2 are removed from the ring mounting surface 104b and replaced together, i.e., in the form of the edge ring assembly E.

[0075] The surface of the wafer support stage 101 on the side of the heat transfer plate E2 that supports the edge ring assembly E, namely the ring mounting surface 104b, may be subjected to a peelability enhancement treatment. The peelability enhancement treatment will be explained later.

[0076] An electrode 108 for holding the wafer W by electrostatic adsorption is provided in the center of the electrostatic chuck 104, and an electrode 109 for holding the edge ring E1 by electrostatic adsorption is provided in the periphery of the electrostatic chuck 104. The electrostatic chuck 104 has a configuration in which the electrodes 108 and 109 are sandwiched between insulating members formed of insulating material.

[0077] A DC voltage from a DC power supply (not shown) is applied to electrode 108. Using the resulting electrostatic force, the wafer W is attracted and held on the upper surface 104a of the central portion of the electrostatic chuck 104. Similarly, a DC voltage from a DC power supply (not shown) is applied to electrode 109. Using the resulting electrostatic force, the edge ring E1 is attracted and held on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. Electrode 109 is as follows... Figure 7 As shown, it is a bipolar type including a pair of electrodes 109a and 109b.

[0078] In this embodiment, the central part of the electrostatic chuck 104 with electrode 108 and the peripheral part of the electrostatic chuck 104 with electrode 109 are integral, but these central and peripheral parts may also be separate.

[0079] In addition, in this embodiment, the electrode 109 used to adsorb and retain the edge ring E1 is bipolar, but it can also be unipolar.

[0080] In addition, the wafer mounting surface 104a of the electrostatic chuck 104 is formed, for example, with a diameter smaller than that of the wafer W. When the wafer W is mounted on the wafer mounting surface 104a, the peripheral portion of the wafer W extends from the center of the electrostatic chuck 104.

[0081] Furthermore, a step is formed on the upper part of the edge ring E1, and the upper surface of the outer periphery of the edge ring E1 is formed to be higher than the upper surface of the inner periphery of the edge ring E1. The inner periphery of the edge ring E1 is formed to enter the lower side of the periphery of the wafer W extending from the center of the electrostatic chuck 104. That is, the inner diameter of the edge ring E1 is formed to be smaller than the outer diameter of the wafer W.

[0082] Although not shown in the figure, a gas supply hole is formed on the wafer mounting surface 104a of the electrostatic chuck 104 to supply heat transfer gas to the back side of the wafer W mounted on the wafer mounting surface 104a. Heat transfer gas from a gas supply unit (not shown) can be supplied through the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit, for example, can supply heat transfer gas from the gas source to the heat transfer gas supply hole via the pressure controller.

[0083] On the other hand, no gas supply hole as described above is formed on the annular mounting surface 104b of the electrostatic chuck 104.

[0084] The insulator 105 is a cylindrical component made of ceramic or the like, used to support the lower electrode 103. For example, the insulator 105 is formed to have an outer diameter equal to the outer diameter of the lower electrode 103, used to support the periphery of the lower electrode 103.

[0085] The lifting pin 106 is a columnar component, for example, made of ceramic, capable of moving up and down relative to the wafer mounting surface 104a of the electrostatic chuck 104. Three or more lifting pins 106 are spaced apart from each other along the circumference of the electrostatic chuck 104, specifically along the circumference of the wafer mounting surface 104a. The lifting pins 106 are, for example, equally spaced along the aforementioned circumference. The lifting pins 106 are arranged to extend in the vertical direction.

[0086] The lifting pin 106 is connected to a lifting mechanism 110 for raising and lowering the lifting pin 106. The lifting mechanism 110 includes, for example, a support member 111 for supporting a plurality of lifting pins 106; and a drive unit 112 for generating a driving force to raise and lower the support member 111, thereby raising and lowering the plurality of lifting pins 106. The drive unit 112 has a drive assembly or drive mechanism (e.g., actuator, motor, and / or other device) for generating the aforementioned driving force.

[0087] The lifting pin 106 is inserted into the through hole 113, which extends downward from the wafer mounting surface 104a of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through hole 113 is formed to penetrate the central part of the electrostatic chuck 104 and the lower electrode 103.

[0088] The upper end face of the lifting pin 106 supports the back side of the chip W when the lifting pin 106 rises.

[0089] The lifting pin 107 is a columnar component capable of rising and falling relative to the annular mounting surface 104b of the electrostatic chuck 104, and is formed, for example, of alumina, quartz, or SUS. Three or more lifting pins 107 are spaced apart from each other along the circumference of the electrostatic chuck 104, specifically along the circumference of the wafer mounting surface 104a and the annular mounting surface 104b. The lifting pins 107 are, for example, evenly spaced along the aforementioned circumferential direction. The lifting pins 107 are arranged to extend in the vertical direction, for example, with their upper end faces horizontal.

[0090] The lifting pin 107 is connected to a lifting mechanism 114 for raising and lowering the lifting pin 107. The lifting mechanism 114 includes, for example, a support member 115 for supporting a plurality of lifting pins 107; and a drive unit 116 for generating a driving force to raise and lower the support member 115, thereby raising and lowering the plurality of lifting pins 107. The drive unit 116 has an electric motor (not shown) for generating the aforementioned driving force.

[0091] The lifting pin 107 is inserted into the through hole 117, which extends downward from the annular mounting surface 104b of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through hole 117 is formed to penetrate the periphery of the electrostatic chuck 104 and the lower electrode 103.

[0092] The lifting pin 107 described above is a connection component that supports and raises the edge ring E1 (specifically, the edge ring assembly E) during the handover between the processing component 60 and the conveying component 50. The upper end face of the lifting pin 107 can support the heat transfer plate E2 side of the edge ring assembly E.

[0093] The surface of the lifting pin 107 that supports the heat transfer plate E2 of the edge ring assembly E, i.e., the upper end surface 107a of the lifting pin 107, can be subjected to a peelability enhancement treatment. The peelability enhancement treatment will be explained later.

[0094] The upper electrode 102 can also function as a spray head for supplying one or more processing gases from the gas supply unit 120 to the plasma processing space 100s. In one embodiment, the upper electrode 102 includes a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas outlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 120 and the gas diffusion chamber 102b (i.e., in a manner that allows fluid to flow between the gas inlet 102a and the gas supply unit 120 and the gas diffusion chamber 102b). The plurality of gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s (i.e., in a manner that allows fluid to flow between the plurality of gas outlets 102c and the gas diffusion chamber 102b and the plasma processing space 100s). In one embodiment, the upper electrode 102 can supply one or more processing gases from the gas inlet 102a through the gas diffusion chamber 102b and the plurality of gas outlets 102c to the plasma processing space 100s.

[0095] The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 may, for example, supply one or more types of process gases from their respective gas sources 121 via their respective flow controllers 122 to the gas inlet 102a. Each flow controller 122 may, for example, include a mass flow controller or a pressure-controlled flow controller. The gas supply unit 120 may also include one or more flow modulation devices for modulating or pulsed the flow rate of one or more types of process gases.

[0096] The RF power supply unit 130 is capable of supplying RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. Thus, plasma can be generated from one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 130 can function as at least part of a plasma generation unit capable of generating plasma from one or more processing gases in a plasma processing chamber. The RF power supply unit 130 includes, for example, two RF generation units 131a and 131b and two matching circuits 132a and 132b. In one embodiment, the RF power supply unit 130 can supply a first RF signal from the first RF generation unit 131a to the lower electrode 103 via the first matching circuit 132a. For example, the first RF signal may have a frequency in the range of 27MHz to 100MHz.

[0097] In another embodiment, the RF power supply unit 130 can supply a second RF signal from the second RF generation unit 131b to the lower electrode 103 via the second matching circuit 132b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generation unit may be used instead of the second RF generation unit 131b.

[0098] Furthermore, although the illustrations are omitted, other embodiments can be considered in this invention. For example, in an alternative embodiment, the RF power supply unit 130 may be configured to supply a first RF signal to the lower electrode 103 from an RF generation unit, a second RF signal to the lower electrode 103 from another RF generation unit, and a third RF signal to the lower electrode 103 from yet another RF generation unit. Alternatively, in another alternative embodiment, a DC voltage may be applied to the upper electrode 102.

[0099] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., a first RF signal, a second RF signal, etc.) can be pulsed or modulated. Amplitude modulation may include pulsed RF signal amplitude between an ON state and an OFF state, or between two or more different ON states.

[0100] The exhaust system 140 may be connected, for example, to an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 140 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0101] Next, an example of wafer processing using processing component 60 will be described. In processing component 60, wafer W can be processed, for example, by etching, film deposition, etc.

[0102] First, the wafer W is fed into the plasma processing chamber 100, and the wafer W is placed on the electrostatic chuck 104 by the lifting pin 106. Then, a DC voltage is applied to the electrodes 108 of the electrostatic chuck 104, thereby electrostatically attracting and holding the wafer W on the electrostatic chuck 104. Furthermore, after the wafer W is fed in, the internal pressure of the plasma processing chamber 100 is reduced to a predetermined vacuum level using the exhaust system 140.

[0103] Next, processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102. Additionally, high-frequency power HF for plasma generation is supplied from the RF power supply unit 130 to the lower electrode 103, thereby exciting the processing gas to generate plasma. At this time, high-frequency power LF for ion introduction can be supplied from the RF power supply unit 130. Thus, plasma processing can be performed on the wafer W using the generated plasma.

[0104] When plasma processing ends, the supply of high-frequency power HF from the RF power supply unit 130 and the supply of processing gas from the gas supply unit 120 are stopped. If high-frequency power LF was supplied during plasma processing, the supply of that high-frequency power LF is also stopped. Next, the application of DC voltage to electrode 108 is stopped, and the adsorption and holding of the wafer W by the electrostatic chuck 104 is stopped.

[0105] Next, the wafer W is raised using the lifting pin 106, causing it to detach from the electrostatic chuck 104. During this detachment, the wafer W can undergo a de-energization process. Then, the wafer W is ejected from the plasma processing chamber 100, completing the series of wafer processing steps.

[0106] Next, an example of the replacement process of the edge ring E1 within the processing assembly 60 using the plasma processing system 1 described above will be described, particularly an example of the installation process of the edge ring E1. The following process is performed under the control of the control device 80.

[0107] First, the conveyor pickup 41a of the conveying mechanism 40 is inserted into the container 31b, causing the conveyor pickup 41a to rise within the container 31b and support the heat transfer plate E2 side of the replacement edge ring assembly E. Next, the conveyor pickup 41a is withdrawn from the container 31b and inserted into the load locking assembly 20, causing the conveyor pickup 41a to descend within the load locking assembly 20. As a result, the support pin (not shown) within the load locking assembly 20 receives the edge ring assembly E from the conveying mechanism 40 and supports the heat transfer plate E2 side of the edge ring assembly E. Afterward, the conveyor pickup 41a is withdrawn, sealing and depressurizing the load locking assembly 20. Then, communication is established between the interior of the load locking assembly 20 and the interior of the conveying assembly 50.

[0108] Next, the conveying arm 71 (the conveying pickup) of the conveying mechanism 70 is inserted into the load locking assembly 20, causing the conveying arm 71 to rise within the load locking assembly 20. Thereby, the conveying mechanism 70 receives the edge ring assembly E from the support pin (not shown) within the load locking assembly 20 and supports the heat transfer plate E2 side of the edge ring assembly E. Then, the conveying arm 71 is withdrawn from the load locking assembly 20, thereby conveying the edge ring assembly E from the load locking assembly 20 to the transfer assembly 50.

[0109] Next, the gate valve 61 of the desired processing component 60 is opened. Then, the transport arm 71 on the heat transfer plate E2 side supporting the edge ring assembly E is inserted into the depressurized plasma processing chamber 100 via the feed inlet / outlet (not shown), transporting the edge ring assembly E above the ring mounting surface 104b of the electrostatic chuck 104. In other words, the transport mechanism 70 supports the heat transfer plate E2 side of the edge ring assembly E and transports the edge ring assembly E above the ring mounting surface 104b of the electrostatic chuck 104.

[0110] Next, the lifting pin 107 is raised, transferring the edge ring assembly E from the conveying arm 71 to the lifting pin 107, so that the lifting pin 107 supports the heat transfer plate E2 side. In other words, the lifting pin 107 receives the edge ring assembly E from the conveying mechanism 70 and supports the heat transfer plate E2 side of the edge ring assembly E.

[0111] Subsequently, the transport arm 71 is withdrawn from the plasma processing chamber 100, i.e., the transport arm 71 is retracted. Simultaneously, the lifting pin 107 is lowered, placing the edge ring assembly E from the heat transfer plate E2 side onto the ring mounting surface 104b of the electrostatic chuck 104. In other words, the electrostatic chuck 104 receives the edge ring assembly E from the lifting pin 107 with the edge ring E1 mounted on the ring mounting surface 104b, separated from the heat transfer plate E2.

[0112] Subsequently, a DC voltage is applied to the electrodes 109 located at the periphery of the electrostatic chuck 104, and the resulting electrostatic force causes the edge ring E1 to adhere to the ring mounting surface 104b through the heat transfer plate E2. Specifically, for example, different voltages are applied to the electrodes 109a and 109b, and the resulting electrostatic force corresponding to the potential difference causes the edge ring E1 to adhere to and remain on the ring mounting surface 104b through the heat transfer plate E2.

[0113] Thus, the installation process of the edge ring E1 is completed. As can be seen from the above, during the installation process of the edge ring E1 in this embodiment, the plasma processing chamber 100 of the processing assembly 60 for replacing the edge ring E1 is not open to the atmosphere.

[0114] The disassembly process of edge ring E1 is performed in reverse order of the installation process of edge ring E1 described above. Therefore, edge ring E1 is disassembled together with heat transfer plate E2, that is, it is disassembled as edge ring assembly E. When disassembling edge ring E1, edge ring assembly E can be sent out of plasma processing chamber 100 after cleaning edge ring E1.

[0115] The following section explains the treatment to improve peelability.

[0116] As described above, the surfaces of the heat transfer plates E2 side in the container 31b, conveying arm 41, conveying arm 71, wafer support stage 101, and lifting pin 107 that support the edge ring assembly E can be subjected to a peelability enhancement treatment.

[0117] Peelability enhancement treatments include, for example, embossing or smoothing processes.

[0118] Embossing is a process that forms protrusions on the surface of the object being processed to reduce the contact area between the surface of the object being processed and the heat transfer plate E2. Specifically, embossing is, for example, the following process: forming hemispherical protrusions with a diameter of 10 μm to 100 μm, such that the ratio of the area of ​​the protrusions to the area of ​​the entire surface of the object being processed is a predetermined ratio.

[0119] Alternatively, a cylindrical protrusion of the same size can be formed instead of the aforementioned hemispherical protrusion.

[0120] The appropriate value of the aforementioned ratio varies depending on the surface to be processed. When the surface to be processed is the wafer support 101 (the ring mounting surface 104b), the aforementioned ratio is, for example, 50% or more and 80% or less. By setting the aforementioned ratio to 80% or less, high peelability can be obtained, and by setting the aforementioned ratio to 50% or more, sufficient heat transfer between the wafer support 101 and the edge ring E1 can be obtained.

[0121] In addition, when the object being processed is a portion other than the wafer support 101 (the annular mounting surface 104b), the aforementioned ratio is, for example, 20% or more and 50% or less. When this ratio is reached, high peelability can be obtained.

[0122] The aforementioned proportions, in other words, are as follows. That is, in this embodiment, the proportions of the protrusion formation areas on the annular mounting surface 104b of the wafer support 101 and the portion thereoutside can be different.

[0123] Smoothing is a process that smooths the surface of the object being processed, reducing the number of minute irregularities (smaller than those formed by embossing) on ​​the surface. By performing smoothing, the anchoring effect, which increases peelability due to the heat transfer plate E2 entering the minute irregularities, can be reduced. For example, it is preferable to perform smoothing so that the surface roughness of the object being processed is less than 1 μm in terms of arithmetic mean roughness.

[0124] Peelability enhancement treatment can be a process of covering (coating) the surface of the object to be treated with a material that has high peelability. Alternatively, peelability enhancement treatment can be a process of forming a portion including the surface of the object to be treated with a material that has high peelability. Examples of materials with high peelability include silicone resins, fluoropolymers, or ceramics.

[0125] Furthermore, the peelability enhancement process can be tailored to the type of surface being processed. Specifically, for example, a smoothing process can be performed as a peelability enhancement process for the wafer support stage 101, where thermal conductivity is also important in addition to peelability, while an embossing process can be performed as a peelability enhancement process for the transport arm 41, which is primarily important for peelability.

[0126] As described above, the method for replacing the edge ring E1 in this embodiment includes the following steps (A) to (C).

[0127] In step (A), the conveying mechanism 70 supports the heat transfer plate E2 side of the edge ring assembly E and moves the edge ring assembly E above the wafer support stage 101.

[0128] In step (B), the lifting pin 107 receives the edge ring assembly E from the conveying mechanism 70 and supports the heat transfer plate E2 side of the edge ring assembly E.

[0129] In step (C), the wafer support stage 101 receives the edge ring assembly E from the lifting pin 107 in such a manner that the edge ring E1 is placed on the wafer support stage 101 with the heat transfer plate E2 in between.

[0130] Furthermore, the edge ring replacement method of this embodiment does not expose the plasma processing chamber 100 to the atmosphere during the aforementioned steps (A) to (C). Therefore, the edge ring E1 and the heat transfer plate E2 can be disposed together on the wafer support stage 101. Moreover, when this mounting method is used, the edge ring E1 and the heat transfer plate E2 can be removed from the wafer support stage 101 together using the reverse process without exposing the plasma processing chamber 100 to the atmosphere.

[0131] Therefore, according to this embodiment, in a processing assembly 60 where a heat transfer plate E2 is disposed between the edge ring E1 and the wafer support stage 101, the edge ring E1 and the heat transfer plate E2 can be replaced without opening the plasma processing chamber 100 to the atmosphere. Furthermore, as a result, the time required from replacing the edge ring E1 to the resumption of plasma processing can be shortened.

[0132] Furthermore, in the edge ring E1 replacement method of this embodiment, the edge ring E1 is disassembled as an edge ring assembly E, so the heat transfer plate E2 will not remain on the wafer support stage 101. Therefore, there is no problem of deterioration of the heat transfer plate E2 located between the edge ring E1 and the wafer support stage 101. Moreover, it is possible to prevent subsequent plasma processing from being adversely affected by the heat transfer plate E2 remaining on the wafer support stage 101.

[0133] As described above, the surface of the wafer support 101 and the like used to support the heat transfer sheet E2 side of the edge ring assembly E can be subjected to a peelability enhancement treatment. By performing this peelability enhancement treatment, the possibility that the heat transfer sheet E2 will partially remain on the surface supporting the heat transfer sheet E2 or that the edge ring E1 will jump up when the edge ring E1 is removed from the ring mounting surface 104b in the form of the edge ring assembly E can be reduced.

[0134] In addition, a peelability enhancement treatment can be applied to the surface of the heat transfer plate E2 side of the support pin (not shown) in the load locking assembly 20 that supports the edge ring assembly E.

[0135] Furthermore, in this embodiment, no gas supply hole for supplying heat transfer gas is formed on the annular mounting surface 104b of the wafer support stage 101. That is, no heat transfer gas is used when holding the edge ring E1 using the annular mounting surface 104b. Therefore, according to this embodiment, the following effects can be obtained.

[0136] In contrast to the technology of this embodiment, in techniques that supply heat transfer gas to the space between the edge ring and the annular mounting surface of the wafer support stage without using a heat transfer plate for edge ring temperature regulation, it is sometimes impossible to control the edge ring to the desired temperature when the heat input from the plasma to the edge ring is large. This is because the edge ring and the wafer support stage deform significantly due to the heat input, thereby increasing the gap between them, causing heat transfer gas to leak out, and resulting in reduced heat transfer between the edge ring and the wafer support stage. In this embodiment, however, no heat transfer gas is used, and even if the edge ring E1 and the wafer support stage 101 expand significantly due to the heat input from the plasma, the heat transfer plate E2 can expand accordingly. Therefore, no gap is formed between the edge ring E1 and the wafer support stage 101, and thus, the edge ring E1 can be controlled to the desired temperature by means of the wafer support stage 101.

[0137] Helium has traditionally been used as a heat transfer gas, but it is expensive. In this embodiment, such an expensive heat transfer gas is not used, thus achieving cost reduction.

[0138] However, the present invention does not preclude the provision of a gas supply hole on the annular mounting surface 104b to supply heat transfer gas to the heat transfer plate E2. For example, if the annular mounting surface 104b is subjected to an embossing process as a peelability improvement process, a gap will be formed between the annular mounting surface 104b and the heat transfer plate E2, and therefore, heat transfer gas can be supplied to this gap.

[0139] Furthermore, in the replacement method of the edge ring E1 of this embodiment, during the above steps (A) to (C), the heat transfer plate E2 side of the edge ring assembly E is kept facing downwards. That is, when replacing the edge ring E1 in the form of the edge ring assembly E, it is not necessary to reverse the back side (the side facing the heat transfer plate E2) and the front side (the side opposite to the heat transfer plate E2) of the edge ring assembly E. Therefore, a reversing mechanism for reversing the edge ring assembly E is not required. Therefore, compared with the case where a reversing mechanism is provided, the plasma processing system 1 can be miniaturized. In particular, when a reversing mechanism is provided in the part formed as a depressurized atmosphere, it is also necessary to exhaust the storage part for housing the reversing mechanism, and a large exhaust device is also required. Compared with this case, according to this embodiment, the plasma processing system 1 can be miniaturized.

[0140] However, the present invention does not preclude the provision of the aforementioned reversing mechanism in the plasma processing system 1. For example, when the edge ring assembly E is supported by the upper surface of the shelf F11 on the side opposite to the heat transfer plate E2 within the container 31b housing the edge ring assembly E, the aforementioned reversing mechanism can be provided. In this case, the reversing mechanism can be provided in the section maintaining an atmospheric pressure atmosphere or in the section forming a depressurized atmosphere. Specifically, for example, it can be provided as follows: Figure 8 As shown, the reversing mechanism 200 is disposed in the assembly 210 connected to the loading assembly 30 of the atmospheric section 10. Alternatively, the reversing mechanism 200 may also be as follows: Figure 9 As shown, it is provided in component 220 which is connected to the transmission component 50 of the pressure reducing unit 11.

[0141] The reversing mechanism 200 includes, for example, a holding member 201 for holding the front or back side of the edge ring assembly E; and a drive unit 202 for generating a driving force to rotate the holding member 201 holding the edge ring assembly E. The drive unit 202 has a drive assembly or drive mechanism (e.g., an actuator, motor, and / or other device) for generating the aforementioned driving force.

[0142] The surface of the reversing mechanism 200 on the side of the heat transfer plate E2 supporting the edge ring assembly E, specifically the surface of the retaining member 201 on the side of the heat transfer plate E2 supporting the edge ring assembly E, can be subjected to the above-described peelability enhancement treatment.

[0143] Furthermore, in the example above, the replacement edge ring assembly E is housed within container 31b under atmospheric pressure. Alternatively, for example, as... Figure 10 As shown, a storage assembly 300, which serves as a storage section and is maintained in a reduced-pressure atmosphere, is connected to a transfer assembly 50. The edge ring assembly E is stored within this storage assembly 300 under the reduced-pressure atmosphere. Although not shown in the figure, the storage assembly 300 is provided with multiple shelves, for example, similar to those in the container 31b. When the heat transfer plate E2 side of the edge ring assembly E is supported by the upper surface of the shelf, the aforementioned upper surface can be subjected to the peelability improvement treatment described above.

[0144] Alternatively, it could be like this: Figure 11 As shown, the receiving assembly 310 for receiving the edge ring assembly E under reduced pressure is connected to the processing assembly 60. In this case, the receiving assembly 310 can be connected to the plasma processing chamber 100 of the processing assembly 60 via a gate valve 311.

[0145] The storage assembly 310, for example, has a storage chamber 312 as a storage unit on the inner side, based on the plasma processing chamber 100, and a depressurization delivery chamber 313 on the front side. The storage chamber 312 and the depressurization delivery chamber 313 are formed as one unit. The interior of the storage chamber 312 and the depressurization delivery chamber 313 is maintained in a depressurized atmosphere.

[0146] The edge ring assembly E can be stored in the storage chamber 312 under a reduced pressure atmosphere. Although not shown in the figure, multiple shelves are provided inside the storage chamber 312, similar to those in the container 31b.

[0147] The depressurized delivery chamber 313 is connected to the plasma processing chamber 100 via a gate valve 311. Inside the depressurized delivery chamber 313, a delivery mechanism 320 is configured in the same way as the delivery mechanism 70 described above. When replacing the edge ring E1, the delivery mechanism 320 can transport the edge ring assembly E between the receiving chamber 312 and the plasma processing chamber 100 via the depressurized delivery chamber 313.

[0148] Alternatively, the conveying mechanism 320 can be omitted, and the conveying arm 71 of the conveying mechanism 70 within the conveying assembly 50 can be elongated. Using the conveying mechanism 70, the edge ring assembly E can be conveyed between the receiving chamber 312 and the plasma processing chamber 100.

[0149] Alternatively, it can be like Figure 12 As shown, a reversing mechanism 200 is provided in the area of ​​the storage component 310 adjacent to the depressurization delivery chamber 313.

[0150] In such Figure 11 and Figure 12 When the storage assembly 310 is set up as shown, the shelf in the storage chamber 312, the conveying mechanism 320 in the pressure-reducing conveying chamber 313, and the surface of the heat transfer plate E2 side in the reversing mechanism 200 that supports the edge ring assembly E can be subjected to the above-described peelability improvement treatment.

[0151] As explained above, the surface of the wafer support stage 101, such as the annular mounting surface 104b, on the side supporting the heat transfer sheet E2 of the edge ring assembly E, may undergo a peelability enhancement treatment. Alternatively, or on this basis, the surface of the heat transfer sheet E2 opposite to the edge ring E1, i.e., the back side, may undergo a peelability enhancement treatment.

[0152] The peelability improvement treatment on the back side of the heat transfer plate E2 is, for example, the incorporation of heat transfer material powder or fibers. The aforementioned heat transfer material is, for example, an aluminum nitride, silicon (Si), or silicon carbide (SiC).

[0153] Furthermore, the process for improving the peelability of the back side of the heat transfer plate E2 involves reducing the contact area between the back side of the heat transfer plate E2 and the ring mounting surface 104b compared to the contact area between the front side of the heat transfer plate E2 and the edge ring E1. Specifically, this process may involve forming a recess on the back side of the heat transfer plate E2.

[0154] Figure 13 This is a diagram illustrating another example of a lifting pin.

[0155] Figure 6 In the example, the lengths of the lifting pins 107 are equal. Therefore, when the multiple lifting pins 107 rise, and the edge ring assembly E is peeled off from the ring mounting surface 104b of the wafer support stage 101 by means of the multiple lifting pins 107, the edge ring assembly E is peeled off approximately simultaneously as a whole.

[0156] and Figure 13 The example lifting pin 400 has a short lifting pin 401 and a long lifting pin 402. Therefore, when multiple lifting pins 400 rise, only the long lifting pin 401 contacts the edge ring assembly E first. Thus, when the edge ring assembly E is peeled off from the ring mounting surface 104b, only one end of the edge ring assembly E is peeled off first. Therefore, when the edge ring assembly E is peeled off from the ring mounting surface 104b, it is possible to suppress the edge ring assembly E from jumping. Furthermore, the difference in length between the lifting pins 401 and 402 is set such that the edge ring assembly E does not shift when supported by the lifting pins 400.

[0157] Furthermore, by replacing the original method with a method that makes each lifting pin equal in length and provides a separate drive unit for each lifting pin to generate a driving force for lifting, when the edge ring assembly E is peeled off from the ring mounting surface 104b, it is also possible to peel off only one end of the edge ring assembly E first.

[0158] The above descriptions have provided various illustrative embodiments, but the embodiments are not limited to these illustrative embodiments. Various additions, omissions, substitutions, and changes can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

Claims

1. A plasma processing system, characterized by, include: A plasma processing apparatus for plasma processing of substrates; and The depressurization conveying device connected to the plasma processing device, The plasma processing device includes: A decompression-capable processing container; A support platform, disposed within the processing container, is capable of holding an edge ring assembly formed by attaching heat transfer plates to an edge ring configured to surround a substrate placed on the support platform; and A transfer component for raising and lowering the edge ring assembly to facilitate the transfer of the edge ring assembly between the plasma processing device and the depressurization conveying device. The pressure-reducing conveying device includes: A depressurization delivery chamber connected to the processing container, capable of depressurization; and A conveying mechanism for conveying the edge ring assembly between the processing container and the depressurized conveying chamber. The plasma processing system is capable of: The processing container must not be exposed to the atmosphere. The heat transfer plate side of the edge ring assembly is supported by the conveying mechanism, and the edge ring assembly is moved upwards towards the support platform. The receiving component receives the edge ring assembly from the conveying mechanism and supports the heat transfer plate side of the edge ring assembly. The edge ring assembly is received from the junction component by the support platform in such a manner that the edge ring is placed on the support platform with the heat transfer plate in between.

2. The plasma processing system as described in claim 1, characterized in that: The edge ring assembly does not reverse, at least not in the depressurized atmosphere within the plasma processing system, until it is received by the support platform.

3. The plasma processing system as described in claim 1, characterized in that: A reversing mechanism is provided in the part forming the depressurized atmosphere to reverse the edge ring assembly.

4. The plasma processing system as described in claim 1 or 2, characterized in that: A reversing mechanism is provided in the part that maintains an atmospheric pressure atmosphere for reversing the edge ring assembly.

5. The plasma processing system as described in claim 1 or 2, characterized in that: The surface of the conveying mechanism that supports the edge ring assembly has been treated to improve its peelability.

6. The plasma processing system as described in claim 1 or 2, characterized in that: The surface of the junction component that supports the edge ring assembly has been treated to improve its peelability.

7. The plasma processing system as described in claim 1 or 2, characterized in that: Includes a receiving section connected to the depressurized delivery chamber, which is used to receive the edge ring assembly under a depressurized atmosphere. The surface of the receiving section that supports the edge ring assembly has been treated to improve its peelability.

8. The plasma processing system as described in claim 1 or 2, characterized in that: It also includes an atmospheric conveying device connected to the pressure-reducing conveying device. The atmospheric transport device includes: A container holding section for placing a container for receiving the edge ring assembly under atmospheric pressure; and Another conveying mechanism is used to convey the edge ring assembly between the container placement section and the pressure-reducing conveying device.

9. The plasma processing system as described in claim 8, characterized in that: The surface of the other conveying mechanism used to support the edge ring assembly has been treated to improve peelability.

10. The plasma processing system as described in claim 8, characterized in that: The surface of the container that supports the contained edge ring assembly has been treated to improve its peelability.

11. The plasma processing system as described in claim 1 or 2, characterized in that: The surface of the heat transfer plate opposite to the edge ring has been treated to improve its peelability.

12. The plasma processing system as described in claim 1 or 2, characterized in that: There is no supply port for heat transfer gas on the surface of the support platform used to hold the edge ring assembly.

13. The plasma processing system as described in claim 1 or 2, characterized in that: The upper surface of the connecting component has been smoothed, and the arithmetic mean roughness of the upper surface of the connecting component is less than 1 μm.

14. The plasma processing system as described in claim 1 or 2, characterized in that: The upper surface of the conveying mechanism has been smoothed, and the arithmetic mean roughness of the upper surface of the conveying mechanism is less than 1 μm.

15. A method for replacing an edge ring in a plasma processing system, characterized in that: The plasma processing system includes: Plasma processing device; and The depressurization conveying device connected to the plasma processing device, The plasma processing device includes: A decompression-capable processing container; A support platform, disposed within the processing container, is capable of holding an edge ring assembly formed by attaching heat transfer plates to an edge ring configured to surround a substrate placed on the support platform; and A transfer component for raising and lowering the edge ring assembly to facilitate the transfer of the edge ring assembly between the plasma processing device and the depressurization conveying device. The pressure-reducing conveying device includes: A depressurization delivery chamber connected to the processing container, capable of depressurization; and A conveying mechanism for conveying the edge ring assembly between the processing container and the depressurized conveying chamber. The method for replacing the edge ring includes: Step (A): The conveying mechanism supports the heat transfer plate side of the edge ring assembly and moves the edge ring assembly upward toward the support platform; Step (B), the transfer component receives the edge ring assembly from the conveying mechanism and supports the heat transfer plate side of the edge ring assembly; and In step (C), the support platform receives the edge ring assembly from the junction component such that the edge ring is placed on the support platform with the heat transfer plate in between. The steps (A) to (C) are performed without opening the processing container to the atmosphere, and during the steps (A) to (C), the heat transfer plate side of the edge ring assembly is kept facing downward.

16. The method for replacing the edge ring as described in claim 15, characterized in that: The upper end surface of the interface member is subjected to smoothing treatment, and the arithmetic average roughness of the upper end surface of the interface member is 1 μm or less.

17. The edge ring replacement method of claim 15, wherein: The upper surface of the transport mechanism is subjected to smoothing treatment, and the arithmetic average roughness of the upper surface of the transport mechanism is 1 μm or less.

Images