A UV LED and detector homogeneous integrated chip and its preparation method

Abstract

The present invention provides a homogeneous integrated chip of an ultraviolet LED and a detector and a method for preparing the same. The homogeneous integrated chip comprises: a substrate; a buffer layer; an LED device in an annular or arc-shaped manner; and a detector located inside the LED device. The integrated chip of the present invention utilizes the annular or arc-shaped LED device and the detector located inside the LED device, thereby improving the utilization rate of the LED light output directionally. While maintaining a certain active area, the interaction area between the LED and the detector sidewalls is increased, facilitating detector collection. The integrated chip of the present invention includes a metal reflective layer disposed on the outer peripheral surface of the LED device. This significantly improves the light extraction efficiency and electro-optical conversion efficiency of the LED device in the homogeneous integrated chip, increases the incident light flux received by the detector, improves sensitivity, and effectively reduces light dissipation in the integrated chip, thereby achieving the purpose of improving the signal conversion efficiency and transmission speed of the homogeneous integrated chip of the ultraviolet LED and detector.

Description

Technical Field

[0001] The present invention relates to the fields of semiconductor technology and communications, and in particular to an ultraviolet LED and detector homogeneous integrated chip and a preparation method thereof. Background Art

[0002] Because ultraviolet light has the advantages of short wavelength, high frequency, rapid information transmission, and immunity to interference from visible light, it is easily concealed and maintains high confidentiality. Homogeneous integrated chips utilizing ultraviolet optoelectronic devices as signal transmission units have significant applications in secure communications, missile warning and guidance, atmospheric environmental monitoring, deep space exploration, and ultraviolet navigation. AlGaN is a direct bandgap semiconductor with a bandgap that is continuously adjustable between 3.4 and 6.2 eV, depending on the Al composition. The corresponding wavelength range is 365 nm to 200 nm, covering most of the ultraviolet band. AlGaN also possesses stable physical and chemical properties and can operate under high-frequency, high-voltage, and high-power conditions, making it a high-quality material for the preparation of ultraviolet homogeneous optoelectronic integrated chips.

[0003] However, previous research on homogeneous integrated chips of LEDs and detectors found that due to the uncertainty of the light source's light emission direction, only a very small portion of the light propagating through the air can be detected by the PD. The traditional solution is to use optical waveguides to limit the light path to assist light transmission. However, because waveguide devices generally have only a single directionality and the optical coupling efficiency between the light source and the detector is low, optical signal loss is still very serious, resulting in weak collection capability and low response efficiency on the detector side, which ultimately affects the transmission rate, bandwidth and power consumption of the integrated chip.

[0004] Based on the technical defects of the current homogeneous integrated chip of LED and detector, it is necessary to improve it. Summary of the Invention

[0005] In view of this, the present invention proposes a UV LED and detector homogeneous integrated chip and a preparation method thereof, which solve or at least partially solve the technical defects existing in the prior art.

[0006] To achieve the above object, the present invention adopts the following technical solutions:

[0007] A homogeneous integrated chip of an ultraviolet LED and a detector, comprising:

[0008] substrate;

[0009] a buffer layer located on one side of the substrate;

[0010] An LED device is located on a side of the buffer layer away from the substrate, and the LED device is in a ring shape or an arc shape;

[0011] The detector is located on a side of the buffer layer away from the substrate and inside the LED device.

[0012] Preferably, the ultraviolet LED and detector are homogeneously integrated into a chip, and the LED device includes a first n-type doped layer, a first multi-quantum well layer and a first p-type doped layer bonded in sequence, the projection of the first multi-quantum well layer on the first n-type doped layer does not completely cover the first n-type doped layer, a first n-type electrode is provided on the surface of the first n-type doped layer not covered by the first multi-quantum well layer, and a first p-type electrode is provided on the surface of the first p-type doped layer.

[0013] Preferably, the ultraviolet LED and detector are homogeneously integrated into a chip, and the detector includes a second n-type doped layer, a second multi-quantum well layer, and a second p-type doped layer laminated in sequence, a projection of the second multi-quantum well layer on the second n-type doped layer does not completely cover the second n-type doped layer, a second n-type electrode is provided on the surface of the second n-type doped layer not covered by the second multi-quantum well layer, and a second p-type electrode is provided on the surface of the second p-type doped layer.

[0014] Preferably, the ultraviolet LED and the detector are homogeneously integrated into a chip, and insulating layers are provided on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, and between the LED device and the detector.

[0015] Preferably, the ultraviolet LED and the detector are homogeneously integrated into a chip, and a metal reflective layer is provided on the insulating layer on the outer peripheral surface of the LED device.

[0016] Preferably, the ultraviolet LED and the detector are homogeneously integrated into a chip, and the buffer layer is an AlN / AlGaN superlattice buffer layer;

[0017] The first n-type doped layer and the second n-type doped layer are both n-AlGaN layers;

[0018] The first multi-quantum well layer and the second multi-quantum well layer are both AlGaN multi-quantum well layers;

[0019] The first p-type doped layer and the second p-type doped layer are both p-AlGaN layers;

[0020] The material of the first n-type electrode and the second n-type electrode is one of Ti / Al, Ti / Al / Ni / Au, and Ti / Al / Ti / Au;

[0021] The material of the first p-type electrode and the second p-type electrode is one of Ni, Au, and Ni / Au.

[0022] Preferably, the ultraviolet LED and the detector are homogeneously integrated into a chip, and the material of the insulating layer includes one of SiO2, Si3N4, and HfO2.

[0023] Preferably, the ultraviolet LED and the detector are homogeneously integrated into a chip, and the material of the metal reflective layer is one of Al and Al / Ti / Au.

[0024] Based on the same inventive concept, the present invention also provides a method for preparing the aforementioned ultraviolet LED and detector homogeneous integrated chip, comprising the following steps:

[0025] sequentially growing a buffer layer, an n-type doped layer, a multi-quantum well layer and a p-type doped layer on the substrate;

[0026] Prepare areas compatible with the LED device and the detector on the substrate, prepare a first n-type doped layer, a first multi-quantum well layer and a first p-type doped layer of the LED device, and a second n-type doped layer, a second multi-quantum well layer and a second p-type doped layer of the detector;

[0027] preparing a mesa on the first n-type doped layer of the LED device and the second n-type doped layer of the detector respectively;

[0028] forming a first n-type electrode on the first n-type doped layer, and forming a second n-type electrode on the second n-type doped layer;

[0029] A first p-type electrode is prepared on the first p-type doping layer, and a second p-type electrode is prepared on the second p-type doping layer.

[0030] Preferably, the method for preparing the ultraviolet LED and detector homogeneous integrated chip, if the homogeneous integrated chip further includes an insulating layer and a metal reflective layer, the method further includes:

[0031] Prepare insulating layers on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, and between the LED device and the detector;

[0032] Stripping off a portion of the insulating layer to expose a portion of the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode;

[0033] A metal reflective layer is prepared on the insulating layer on the outer peripheral surface of the LED device.

[0034] The ultraviolet LED and detector homogeneous integrated chip of the present invention has the following beneficial effects compared with the prior art:

[0035] (1) The ultraviolet LED and detector homogeneous integrated chip of the present invention adopts a circular or arc-shaped LED device and a detector located inside the LED device, replacing the laterally parallel square LED and detector in the existing integrated chip. This improves the utilization rate of the LED light output in terms of direction. Under the condition of a certain active area, the interaction area between the LED and the detector side wall is increased, which facilitates the detector collection.

[0036] (2) The ultraviolet LED and detector homogeneous integrated chip of the present invention provides a metal reflective layer on the outer peripheral surface of the LED device. By utilizing the metal reflective layer, most of the ultraviolet light emitted by the LED device is ultimately emitted to the central area, making it easier for the detector to collect it. Under the action of the metal reflective layer and the annular or arc-shaped LED device and detector, the light extraction efficiency and electro-optical conversion efficiency of the LED device in the homogeneous integrated chip are greatly improved, the incident light flux received by the detector is increased, the sensitivity is improved, and the light dissipation of the integrated chip is effectively reduced, thereby achieving the purpose of improving the signal conversion efficiency and transmission speed of the ultraviolet LED and detector homogeneous integrated chip.

[0037] (3) The method for preparing the ultraviolet LED and detector homogeneous integrated chip of the present invention, the light-emitting device LED and the detector, both of which have the same epitaxial structure, are simultaneously prepared using the same set of micro-nano processing technology, and the preparation process is simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0039] Figure 1 This is a schematic diagram of the structure of a homogeneous integrated chip of ultraviolet LED and detector in one embodiment of the present invention;

[0040] Figure 2 A top view of a homogeneous integrated chip of an ultraviolet LED and a detector in one embodiment of the present invention;

[0041] Figure 3 This is a schematic diagram of the structure of a homogeneous integrated chip of ultraviolet LED and detector in one embodiment of the present invention;

[0042] Figure 4 A top view of a homogeneous integrated chip of an ultraviolet LED and a detector in one embodiment of the present invention;

[0043] Figures 5 to 9 Schematic diagram of the preparation process of the ultraviolet LED and detector homogeneous integrated chip of the present invention;

[0044] Figure 10 The present invention is a schematic flow chart of the method for preparing the ultraviolet LED and detector homogeneous integrated chip. DETAILED DESCRIPTION

[0045] The following describes embodiments of the present application in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present application.

[0046] like Figures 1-2 As shown, the embodiment of the present application provides a UV LED and detector homogeneous integrated chip, including:

[0047] Substrate 1;

[0048] a buffer layer 2 located on one side of the substrate 1;

[0049] An LED device is located on the side of the buffer layer 2 away from the substrate 1, and the LED device is in a ring shape or an arc shape;

[0050] The detector is located on the side of the buffer layer 2 away from the substrate 1 and inside the LED device.

[0051] It should be noted that the UV LED and detector homogeneous integrated chip provided by the embodiment of the present application can be a conventional substrate such as a c-plane (i.e., (0001) plane) sapphire substrate, a silicon substrate, or a silicon carbide substrate, including but not limited to using a graphical method to improve the substrate quality; after a buffer layer 2 is provided on the substrate 1, an LED device and a detector are provided on the buffer layer 2. Specifically, the LED device is annular or arc-shaped, and the detector is located inside the annular or arc-shaped LED device. The LED device and the detector can be AlGaN-based devices, and obviously can also be GaN-based devices; the shape of the detector can be determined according to actual use, for example, it can be cylindrical; in practice, the LED device is an open annular shape, in which case the LED device can be regarded as an arc-shaped. The homogeneous integrated chip of the present application uses an annular or arc-shaped LED device and a detector located inside the LED device, replacing the laterally parallel square LED and detector in the existing integrated chip, thereby improving the utilization rate of the LED light output in terms of direction, and increasing the interaction area between the LED and the detector sidewalls when the active area is constant, which is convenient for the detector to collect.

[0052] In some embodiments, the LED device includes a first n-type doped layer 31, a first multi-quantum well layer 41 and a first p-type doped layer 51 that are sequentially bonded together, the projection of the first multi-quantum well layer 41 on the first n-type doped layer 31 does not completely cover the first n-type doped layer 31, a first n-type electrode 6 is provided on the surface of the first n-type doped layer 31 not covered by the first multi-quantum well layer 41, and a first p-type electrode 7 is provided on the surface of the first p-type doped layer 51.

[0053] In some embodiments, the detector includes a second n-type doped layer 32, a second multi-quantum well layer 42, and a second p-type doped layer 52 bonded in sequence. The projection of the second multi-quantum well layer 42 on the second n-type doped layer 32 does not completely cover the second n-type doped layer 32. A second n-type electrode 8 is provided on the surface of the second n-type doped layer 32 not covered by the second multi-quantum well layer 42, and a second p-type electrode 9 is provided on the surface of the second p-type doped layer 52.

[0054] In the above embodiment, each layer of the LED device and the detector may be made of the same material or different materials; the projection of the first multi-quantum well layer 41 on the first n-type doped layer 31 does not completely cover the first n-type doped layer 31, and the projection of the second multi-quantum well layer 42 on the second n-type doped layer 32 does not completely cover the second n-type doped layer 32. The specific implementation method is: the first multi-quantum well layer 41 is directly arranged on the first n-type doped layer 31, and the length and width of the first multi-quantum well layer 41 are both smaller than the first n-type doped layer 31, so that the projection of the first multi-quantum well layer 41 on the first n-type doped layer 31 does not completely cover the first n-type doped layer 31; the first n-type doped layer 31 may also be arranged in a stepped shape, and the first multi-quantum well layer 41 is located on the upper step, so that the projection of the first multi-quantum well layer 41 on the first n-type doped layer 31 does not completely cover the first n-type doped layer 31; similarly, the same arrangement may be adopted for the second multi-quantum well layer 42.

[0055] Specifically, in some embodiments, the first n-type electrode 6 and the first p-type electrode 7 are also arc-shaped or ring-shaped; the second n-type electrode 8 is ring-shaped, and the second p-type electrode 9 is cylindrical.

[0056] In some embodiments, reference Figure 2 As shown, it is a top view of a homogeneous integrated chip, the LED device is arc-shaped, the first n-type electrode 6 includes a first portion 61 arranged in an arc shape and a second portion 62 connected to the first portion 61; the second n-type electrode 8 includes a third portion 81 arranged in a circular ring shape and a fourth portion 82 connected to the third portion 81, and the fourth portion 82 passes through the opening portion of the circular ring-shaped LED device.

[0057] In some embodiments, reference Figures 3-4As shown, an insulating layer 33 is provided on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, and between the LED device and the detector.

[0058] In the above embodiment, an insulating layer 33 is provided on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, the buffer layer 2, and between the LED device and the detector. The function of the insulating layer 33 is to isolate the epitaxial structures of each layer of the LED device and the detector, and at the same time isolate the subsequent metal reflective layer 34.

[0059] In some embodiments, first n-type electrode 6 and first p-type electrode 7 of the LED device, and second n-type electrode 8 and second p-type electrode 9 of the detector, are not completely covered by insulating layer 33. That is, first n-type electrode 6, first p-type electrode 7, second n-type electrode 8, and second p-type electrode 9 are partially exposed. Specifically, second portion 62 of first n-type electrode 6 and fourth portion 82 of second n-type electrode 8 are not covered by insulating layer 33.

[0060] In some embodiments, please refer again to Figures 3-4 As shown, Figure 4 This is a top view of a homogeneous integrated chip in another embodiment. A metal reflective layer 34 is provided on the insulating layer 33 on the outer peripheral surface of the LED device.

[0061] In the above embodiment, a metal reflective layer 34 is provided on the outer peripheral surface of the LED device, and the metal reflective layer 34 is utilized to make most of the ultraviolet light emitted by the LED device eventually emit toward the central area, thereby facilitating collection by the detector. Under the action of the metal reflective layer 34 and the annular or arc-shaped LED device and detector, the light extraction efficiency and electro-optical conversion efficiency of the LED device in the homogeneous integrated chip are greatly improved, the incident light flux received by the detector is increased, the sensitivity is improved, and the light dissipation of the integrated chip is effectively reduced, thereby achieving the purpose of improving the signal conversion efficiency and transmission speed of the ultraviolet LED and detector homogeneous integrated chip. Specifically, the working principle of the above-mentioned ultraviolet LED and detector homogeneous integrated chip is as follows: after applying forward bias and signal current to the LED device, the electrons injected into the quantum well jump from the conduction band to the valence band and release the excess energy in the form of photons; through the designed metal reflective layer, the photons transmitted laterally from the active layer of the LED device (i.e., the first multi-quantum well layer) are emitted in a direction pointing to the center, which is convenient for the detector to collect; the electrons in the valence band of the detector absorb photons and jump to the conduction band, generating electron-hole pairs, forming photocurrent in the peripheral circuit, and realizing the mutual conversion of light and electrical signals.

[0062] In some embodiments, the buffer layer 2 is an AlN / AlGaN superlattice buffer layer, and the thickness of the buffer layer 2 is 2 to 4 μm;

[0063] The first n-type doping layer 31 and the second n-type doping layer 32 are both n-AlGaN layers, and the thickness of the n-AlGaN layer is 1 to 3 μm;

[0064] The first multi-quantum well layer 41 and the second multi-quantum well layer 42 are both AlGaN multi-quantum well layers, and the thickness of the AlGaN multi-quantum well layer is 130-160 nm;

[0065] The first p-type doping layer 51 and the second p-type doping layer 52 are both p-AlGaN layers, and the thickness of the p-AlGaN layer is 80 to 120 nm;

[0066] The material of the first n-type electrode 6 and the second n-type electrode 8 is one of Ti / Al, Ti / Al / Ni / Au, and Ti / Al / Ti / Au; the thickness of the first n-type electrode 6 and the second n-type electrode 8 is 80 to 200 nm;

[0067] The material of the first p-type electrode 7 and the second p-type electrode 9 is one of Ni, Au, and Ni / Au. The thickness of the first p-type electrode 7 and the second p-type electrode 9 is 80-200 nm.

[0068] In some embodiments, the material of the insulating layer includes one of SiO 2 , Si 3 N 4 , and HfO 2 .

[0069] In some embodiments, the metal reflective layer 34 is made of a material selected from the group consisting of Al and Al / Ti / Au.

[0070] In the above embodiments, Ti / Al / Ni / Au etc. means Ti, Al, Ni, and Au bonded in this order.

[0071] Based on the same inventive concept, the present invention also provides a method for preparing the above-mentioned ultraviolet LED and detector homogeneous integrated chip, such as Figure 10 As shown, the following steps are included:

[0072] S1, sequentially growing a buffer layer, an n-type doped layer, a multi-quantum well layer, and a p-type doped layer on a substrate;

[0073] S2. Preparing regions on the substrate that are compatible with the LED device and the detector, preparing a first n-type doped layer, a first multi-quantum well layer, and a first p-type doped layer of the LED device, and a second n-type doped layer, a second multi-quantum well layer, and a second p-type doped layer of the detector;

[0074] S3, preparing a table surface on the first n-type doping layer of the LED device and the second n-type doping layer of the detector respectively;

[0075] S4, forming a first n-type electrode on the first n-type doped layer, and forming a second n-type electrode on the second n-type doped layer;

[0076] S5. Prepare a first p-type electrode on the first p-type doping layer, and prepare a second p-type electrode on the second p-type doping layer.

[0077] It should be noted that, in the above embodiments, Figures 5 to 9 FIG. 1 shows a schematic diagram of the process of preparing a homogeneous integrated chip of ultraviolet LED and detector according to the present invention. In step S1, as Figure 5 As shown, a buffer layer 2, an n-type doped layer 3, a multi-quantum well layer 4 and a p-type doped layer 5 are sequentially grown on a substrate 1. The specific growth method of each layer includes but is not limited to directly growing on the substrate using metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride vapor phase epitaxy (HVPE); the preparation of the buffer layer includes but is not limited to using high temperature annealing and a two-step growth method to reduce the dislocation density; in step S2, as Figures 6-7 As shown, the specific method for forming the area on the substrate that is compatible with the LED device and the detector is as follows: the area is obtained by etching after photolithography, specifically, a photoresist is spin-coated on the p-type doped layer of the substrate, exposed under the action of a mask, the mask is compatible with the LED device and the detector, etched after exposure, and then the photoresist is removed to obtain the area on the substrate that is compatible with the LED device and the detector, wherein the etching includes but is not limited to reactive ion etching, dry inductively coupled plasma etching, and chemical wet etching; in step S2, the n-type doped layer 3, the multi-quantum well layer 4, and the p-type doped layer 5 on the substrate 1 are subjected to photolithography and etching to form the first n-type doped layer, the first multi-quantum well layer, and the first p-type doped layer of the LED device, and the second n-type doped layer, the second multi-quantum well layer, and the second p-type doped layer of the detector, respectively; in step S3, as shown Figures 8-9 As shown, the method of preparing the table surface on the first n-type doped layer of the LED device and the second n-type doped layer of the detector is similar to step S2, and is also obtained by etching after photolithography. In step S4, please refer to Figures 8-9 As shown, a first n-type electrode is prepared on the first n-type doped layer, and a second n-type electrode is prepared on the second n-type doped layer; the first n-type electrode and the second n-type electrode are prepared by electron beam evaporation, thermal evaporation, etc.; similarly, in step S5, the first p-type electrode and the second p-type electrode are prepared by electron beam evaporation, thermal evaporation, etc., and the prepared first p-type electrode and the second p-type electrode are further annealed by an annealing process.

[0078] In some embodiments, if the homogeneous integrated chip further includes an insulating layer and a metal reflective layer, the preparation method further includes:

[0079] S5. preparing an insulating layer on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, and between the LED device and the detector;

[0080] S6, peeling off a portion of the insulating layer to expose a portion of the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode;

[0081] S7. Prepare a metal reflective layer on the insulating layer on the outer peripheral surface of the LED device.

[0082] In the above embodiment, in step S5, an insulating layer is deposited using plasma-enhanced chemical vapor deposition (PECVD). In step S6, a portion of the insulating layer is stripped to expose a portion of the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode. The specific method is: etching after photolithography, specifically, the etching method includes reactive ion etching, chemical wet etching, etc.; in step S7, a metal reflective layer is formed on the insulating layer on the outer peripheral surface of the LED device. Specifically, the metal reflective layer is formed on the insulating layer by electron beam evaporation, thermal evaporation, etc.; Obviously, in practice, the metal reflective layer can also be formed after the insulating layer is formed, and then etching is performed after photolithography to etch the metal reflective layer and the insulating layer to expose a portion of the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode. It should be noted that in step S6, exposing the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode facilitates powering the LED and extracting the received signal of the detector, thereby completing the electrical-to-optical and optical-to-electrical conversions, respectively.

[0083] The ultraviolet LED and detector homogeneous integrated chip of the present application includes a light-emitting device LED and a detector PD, both of which are pin-type diodes with the same epitaxial structure and an active area of ​​AlGaN / AlGaN multiple quantum wells. They are synchronously prepared using the same set of micro-nano processing technology. The preparation process is simple and utilizes the coexistence of light emission and detection to realize a full-duplex ultraviolet communication chip integrating transmitting and receiving functions.

[0084] The above description is only part of the implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A homogeneous integrated chip of ultraviolet LED and detector, characterized in that: include: substrate; a buffer layer located on one side of the substrate; An LED device is located on a side of the buffer layer away from the substrate, and the LED device is in a ring shape or an arc shape; a detector located on a side of the buffer layer away from the substrate and inside the LED device; wherein: The detector includes a second n-type doped layer, a second multi-quantum well layer, and a second p-type doped layer that are sequentially bonded together. The projection of the second multi-quantum well layer on the second n-type doped layer does not completely cover the second n-type doped layer. A second n-type electrode is provided on the surface of the second n-type doped layer not covered by the second multi-quantum well layer, and a second p-type electrode is provided on the surface of the second p-type doped layer.

2. The ultraviolet LED and detector homogeneous integrated chip according to claim 1, characterized in that: The LED device includes a first n-type doped layer, a first multi-quantum well layer, and a first p-type doped layer that are sequentially bonded together. The projection of the first multi-quantum well layer on the first n-type doped layer does not completely cover the first n-type doped layer. A first n-type electrode is provided on the surface of the first n-type doped layer not covered by the first multi-quantum well layer, and a first p-type electrode is provided on the surface of the first p-type doped layer.

3. The ultraviolet LED and detector homogeneous integrated chip according to claim 2, characterized in that: Insulation layers are provided on the inner and outer circumferences of the LED device, the outer circumference of the detector, and between the LED device and the detector.

4. The ultraviolet LED and detector homogeneous integrated chip according to claim 3, characterized in that: A metal reflective layer is provided on the insulating layer on the outer peripheral surface of the LED device.

5. The ultraviolet LED and detector homogeneous integrated chip according to claim 4, characterized in that: The buffer layer is an AlN / AlGaN superlattice buffer layer; The first n-type doped layer and the second n-type doped layer are both n-AlGaN layers; The first multi-quantum well layer and the second multi-quantum well layer are both AlGaN multi-quantum well layers; The first p-type doped layer and the second p-type doped layer are both p-AlGaN layers; The material of the first n-type electrode and the second n-type electrode is one of Ti / Al, Ti / Al / Ni / Au, and Ti / Al / Ti / Au; The material of the first p-type electrode and the second p-type electrode is one of Ni, Au, and Ni / Au.

6. The ultraviolet LED and detector homogeneous integrated chip according to claim 5, characterized in that: The material of the insulating layer includes one of SiO2, Si3N4, and HfO2.

7. The ultraviolet LED and detector homogeneous integrated chip according to claim 6, characterized in that: The metal reflective layer material is one of Al and Al / Ti / Au.

8. A method for preparing a homogeneous integrated chip of ultraviolet LED and detector according to any one of claims 1 to 7, characterized in that: The following steps are involved: sequentially growing a buffer layer, an n-type doped layer, a multi-quantum well layer and a p-type doped layer on the substrate; Prepare areas compatible with the LED device and the detector on the substrate, prepare a first n-type doped layer, a first multi-quantum well layer and a first p-type doped layer of the LED device, and a second n-type doped layer, a second multi-quantum well layer and a second p-type doped layer of the detector; preparing a mesa on the first n-type doped layer of the LED device and the second n-type doped layer of the detector respectively; forming a first n-type electrode on the first n-type doped layer, and forming a second n-type electrode on the second n-type doped layer; A first p-type electrode is prepared on the first p-type doping layer, and a second p-type electrode is prepared on the second p-type doping layer.

9. The method for preparing a homogeneous integrated chip of ultraviolet LED and detector according to claim 8, characterized in that: If the homogeneous integrated chip further includes an insulating layer and a metal reflective layer, the preparation method further includes: Prepare insulating layers on the inner and outer peripheral surfaces of the LED device, the outer peripheral surface of the detector, and between the LED device and the detector; Stripping off a portion of the insulating layer to expose a portion of the first n-type electrode, the first p-type electrode, the second n-type electrode, and the second p-type electrode; A metal reflective layer is prepared on the insulating layer on the outer peripheral surface of the LED device.

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