Radio Frequency Power Amplifier

Abstract

The present invention provides a radio frequency power amplifier, comprising: a 4G amplifier unit, a 5G amplifier unit, a bias circuit configured to provide biasing currents for the 4G amplifier unit and the 5G amplifier unit respectively, a matching network configured to provide a tunable impedance according to the operating mode of the radio frequency power amplifier, and a 4G / 5G control circuit configured to control the matching network and the bias circuit to cause the 4G amplifier unit and the 5G amplifier unit to operate in the 4G frequency band or the 5G frequency band.

Description

Technical Field

[0001] The present invention relates to a radio frequency power amplifier, and more particularly, to an integrated 4G / 5G dual-mode radio frequency power amplifier. Background Art

[0002] A radio frequency power amplifier chip (Power Amplifier, PA) is an important component in a mobile phone intelligent terminal. Its main function is to load a data signal onto a specific carrier frequency point and then amplify the signal to a certain power to meet the reception requirements of a remote base station, so as to maintain the stability of data transmission.

[0003] With the gradual development of 5G communication technology in China, there are two implementation strategies for 5G network deployment: Standalone (SA) and Non-Standalone (NSA). The 5G networking method will also follow the transition from a 4G core network to a 5G core network. In the initial stage of 5G deployment, in order to save costs and quickly launch services, most operators choose the Non-Standalone (NSA) mode. Based on the existing 4G core network facilities, 5G small base stations are deployed in areas with high user density to meet the application requirements of some users for the 5G network. In this network environment, it is required that the terminal can simultaneously establish two-way connections to both the 4G and 5G networks and has the function of switching networks at any time.

[0004] After the core network is upgraded to a 5G network, it is difficult for the initial 5G core network to achieve continuous coverage, and there will be a large number of handovers between the 5G and 4G systems. Due to the cell coverage and maturity issues of 5G base stations, 4G base stations with strong coverage capabilities are required to be deployed in cooperation. After the user terminal accesses the 5G core network, it may switch back to the 4G network at any time. This also requires that the uplink link transmitted by the terminal can switch between 4G and 5G signal modes at any time.

[0005] In addition, after the entire 5G core network is fully mature in the future, due to the high frequency, poor coverage effect, and poor penetration ability of the 5G network, there are still problems with insufficient coverage in special areas. When the communication connection between the terminal user and the 5G base station is interrupted, the communication connection needs to switch back to the 4G network mode again. This also requires that the terminal can not only transmit 5G uplink signals, but also transmit 4G uplink signals to meet the dual-network connection ability at any time.

[0006] In current 5G mobile phones or other 5G application terminals, the radio frequency (RF) transmission link generally includes a 4G RF power amplifier for 4G signal transmission. Meanwhile, one or more external 5G RF power amplifiers are used for 5G signal transmission. When switching between 4G and 5G networks simultaneously, an additional switch chip is required for mode switching. As the internal integration of terminals such as 5G mobile phones becomes higher and higher, this discrete combination of 4G and 5G chips cannot flexibly adjust the layout and wiring. Therefore, an RF power amplifier integrating 4G / 5G dual-mode on a single chip is more practical and feasible. Summary of the Invention

[0007] One aspect of the present invention provides an RF power amplifier integrating 4G and 5G dual-mode functions in one chip, and realizes mode switching between 4G and 5G signal transmissions through a 4G / 5G control circuit. This solution has the characteristics of easy integration, reduces the difficulty of multi-chip PCB board-level layout and wiring, and at the same time reduces the number of chips and the overall cost of the RF module in the terminal.

[0008] One aspect of the present invention provides an RF power amplifier, including: a 4G amplifier unit, a 5G amplifier unit, a bias circuit configured to provide bias currents for the 4G amplifier unit and the 5G amplifier unit respectively, a matching network configured to provide tunable impedance according to the operating mode of the RF power amplifier, and a 4G / 5G control circuit configured to control the matching network and the bias circuit to enable the 4G amplifier unit and the 5G amplifier unit to operate in the 4G frequency band or the 5G frequency band.

[0009] One aspect of the present invention provides an RF power amplifier, wherein the 4G frequency band includes B1, B2, B3, B4, B5, B7, B8, B12, B20, B34, B38, B39, B40, B41, and wherein the 5G frequency band includes N1, N2, N3, N4, N5, N7, N8, N12, N20, N34, N38, N39, N40, N41, N77, N78, N79.

[0010] One aspect of the present invention provides an RF power amplifier, wherein the 4G amplifier unit and the 5G amplifier unit use the same RF signal input port and RF signal output port.

[0011] One aspect of the present invention provides an RF power amplifier, wherein the matching network includes an input matching network, an inter-stage matching network, and an output matching network.

[0012] One aspect of the present invention provides a radio frequency power amplifier, wherein the matching network includes a first adjustable part composed of an adjustable capacitor and a first switch for adjusting the equivalent capacitance value of the matching network.

[0013] One aspect of the present invention provides a radio frequency power amplifier, wherein the matching network includes a second adjustable part composed of an adjustable inductor and a second switch for adjusting the equivalent inductance value of the matching network.

[0014] One aspect of the present invention provides a radio frequency power amplifier, wherein the bias circuit is composed of a 4G bias circuit and a 5G bias circuit. Wherein, the 4G / 5G control circuit controls the conduction and cutoff of the 4G bias circuit and the 5G bias circuit to provide a first bias current to the 4G amplifier unit when the 4G bias circuit is working, and provide a second bias current to the 5G amplifier unit when the 5G bias circuit is working.

[0015] One aspect of the present invention provides a radio frequency power amplifier, wherein the 4G / 5G control circuit is configured to simultaneously turn on the 4G amplifier unit and the 5G amplifier unit to amplify the 4G signal when it is necessary to transmit 4G power exceeding a first threshold.

[0016] One aspect of the present invention provides a radio frequency power amplifier, wherein the 4G / 5G control circuit is configured to separately turn on the 4G amplifier unit to amplify the 5G signal when it is necessary to transmit 5G power less than a second threshold.

[0017] One aspect of the present invention provides a radio frequency power amplifier, wherein the 4G / 5G control circuit is configured to adjust the impedance value of the matching network close to the maximum transmission power region when it is necessary to transmit transmission power exceeding a third threshold.

[0018] One aspect of the present invention provides a radio frequency power amplifier, wherein the 4G / 5G control circuit is configured to adjust the impedance value of the matching network close to the maximum transmission efficiency region when the power consumption needs to be controlled within a first range.

[0019] One aspect of the present invention provides a radio frequency power amplifier, wherein the 4G / 5G control circuit is configured to adjust the matching network and the bias circuit in the 4G mode so that the 4G amplifier unit can switch between different 4G frequency bands; and in the 5G mode, adjust the matching network and the bias circuit so that the 5G amplifier unit can switch between different 5G frequency bands. Description of the Drawings

[0020] Figure 1is a schematic diagram showing a radio frequency power amplifier of 4G / 5G dual mode according to an embodiment of the present invention;

[0021] Figure 2 is a circuit diagram showing a radio frequency power amplifier of 4G / 5G dual mode according to an embodiment of the present invention;

[0022] Figure 3 is a circuit diagram showing a power stage amplifier of a radio frequency power amplifier of 4G / 5G dual mode according to an embodiment of the present invention;

[0023] Figure 4 is a circuit diagram showing a drive stage and a power stage bias circuit of a radio frequency power amplifier of 4G / 5G dual mode according to an embodiment of the present invention; and

[0024] Figure 5 is a circuit diagram showing a tuning matching network of 4G / 5G dual mode according to an embodiment of the present invention. Detailed Description

[0025] Before proceeding with the following detailed description, it may be advantageous to set forth definitions of certain words and phrases used throughout this patent document. The terms "coupled", "connected", and their derivatives refer to any direct or indirect communication or connection between two or more elements, regardless of whether those elements are in physical contact with each other. The terms "transmit", "receive", and "communicate", and their derivatives, cover both direct and indirect communication. The terms "comprise" and "include", and their derivatives, mean including but not limited to. The term "or" is inclusive, meaning and / or. The phrase "associated with", and its derivatives, means including, included within, interconnected with, containing, contained within, connected or coupled with, communicating with, cooperating with, interlacing with, juxtaposed with, adjacent to, bound or bound to, having, having the attribute of, having a relationship or a relation with, and so on. The term "controller" refers to any device, system, or part thereof that controls at least one operation. Such a controller can be implemented in hardware, or in a combination of hardware and software and / or firmware. The functions associated with any particular controller can be centralized or distributed, whether local or remote. The phrase "at least one", when used with a list of items, means that different combinations of one or more of the listed items can be used, and it may only be necessary to have one item in the list. For example, "at least one of A, B, C" includes any one of the following combinations: A, B, C, A and B, A and C, B and C, A and B and C.

[0026] Definitions of other specific words and phrases are provided throughout this patent document. Those of ordinary skill in the art should understand that, in many instances if not most, such definitions apply to the prior and future use of such defined words and phrases.

[0027] In this patent document, the application combinations of modules and the hierarchical divisions of sub-modules are only for illustration purposes. Without departing from the scope of the present disclosure, the application combinations of modules and the hierarchical divisions of sub-modules can have different forms.

[0028] In a conventional 5G mobile phone module or other 5G application modules, both 4G signal mode and 5G signal mode need to be supported. When it is necessary to transmit a 4G uplink signal, the 4G radio frequency chip independently transmits the uplink signal; when it is necessary to transmit a 5G uplink signal, the externally attached 5G radio frequency chip transmits the uplink signal. The radio frequency uplink transmission link of a 5G mobile phone module or other 5G application modules is usually composed of a combination of multiple 4G and 5G radio frequency chips. This not only increases the cost of the overall module, but also increases the complexity of the entire module design. At the same time, multiple DC-DC power supply chips are required for power supply, which also increases the additional power consumption.

[0029] Figure 1 FIG. shows a schematic diagram of a radio frequency power amplifier with 4G / 5G dual mode according to an embodiment of the present invention.

[0030] In Figure 1 For convenience, a two-stage radio frequency power amplifier is taken as an example for illustration. However, those skilled in the art should clearly understand that the present invention is equally applicable to power amplifier structures with more stages. In a single radio frequency power amplifier, the driver stage amplifier and the power stage amplifier integrate 4G power units and 5G power units, and 4G control signals and 5G control signals are respectively provided through bias circuits (including a driver stage bias circuit and a power stage bias circuit); the input tuning matching network before the driver stage amplifier, the inter-stage tuning matching network after the driver stage amplifier, and the output tuning matching network of the power stage amplifier provide impedance matching functions for the radio frequency power amplifier, and the impedance values of the matching networks can be adjusted by a 4G / 5G switching control circuit. For the different operating voltages in the 4G and 5G modes, voltage switching is performed by a DC-DC power supply circuit; a low power supply voltage is provided in the 4G mode, and a high power supply voltage is provided in the 5G mode. The entire radio frequency power amplifier is packaged on a single substrate to implement a single-chip integrated radio frequency power amplifier with 4G / 5G dual mode.

[0031] Figure 2 FIG. shows a circuit diagram of a radio frequency power amplifier with 4G / 5G dual mode according to an embodiment of the present invention.

[0032] Refer to Figure 2, the radio frequency power amplifier according to the embodiments of the present invention mainly consists of four parts, namely a 4G / 5G control circuit, a driver stage and power stage bias circuit, a driver stage amplifier and a power stage amplifier integrating 4G / 5G dual modes, and a tunable matching network. The 4G / 5G control circuit realizes the function switching between the 4G working mode and the 5G working mode, as well as the switching of the operating sub-bands in 4G and 5G through the control of the bias circuit and the tunable matching network.

[0033] Figure 3 FIG. is a circuit diagram showing the power stage amplifier of the 4G / 5G dual-mode radio frequency power amplifier according to the embodiments of the present invention.

[0034] Reference Figure 3 , the 4G power stage amplifier unit consists of a parallel structure of multiple power sub-units, where the corresponding numbers are P11 to P1N, and the number of N is adjusted according to the design specifications; the composition of each sub-unit is mainly a gallium arsenide HBT transistor, with a radio frequency resistor and a blocking capacitor connected in series to its base. One end of the bias resistor is connected between the radio frequency resistor and the blocking capacitor, and the other end is connected to the bias circuit to conduct the bias current. Each sub-unit structure in the 4G power stage amplifier unit is the same, and each sub-unit is in a parallel relationship.

[0035] Reference Figure 3 , the 5G power stage amplifier unit consists of a parallel structure of multiple power sub-units, where the corresponding numbers are P21 to P2M, and the number of M is adjusted according to the design specifications; the composition of each sub-unit is mainly a gallium arsenide HBT transistor, with a radio frequency resistor and a blocking capacitor connected in series to its base. One end of the bias resistor is connected between the radio frequency resistor and the blocking capacitor, and the other end is connected to the bias circuit to conduct the bias current. Each sub-unit structure in the 5G power stage amplifier unit is the same, and each sub-unit is in a parallel relationship.

[0036] Reference Figure 3 , the 4G power stage amplifier unit and the 5G power stage amplifier unit share VCC2 to provide the power supply voltage, and they share RFin for 4G and 5G signal inputs respectively, and share RFout for signal output.

[0037] Those skilled in the art should be clear that the 4G driver stage amplifier unit and the 5G driver stage amplifier unit can adopt the same structure as that in Figure 3 , which will not be elaborated here.

[0038] When the radio frequency power amplifier is in the 4G operating mode, the radio frequency signal RF1_4G enters the input tuning and matching network, and the input tuning and matching network is in the 4G mode. Through the control command of the control circuit, the bias circuit supplies bias current to the driver stage amplifier through Bias1_4G, enabling the 4G driver stage amplifier unit to amplify the signal to RF2_4G and input the amplified signal RF2_4G into the inter-stage tuning and matching network; at this time, the inter-stage tuning and matching network is also in the 4G mode, and the bias circuit supplies bias current to the power stage amplifier through Bias2_4G, enabling the 4G power stage amplifier unit to amplify the signal to RF3_4G and input the amplified signal RF3_4G into the output tuning and matching network. At this time, the 4G signal is amplified by the radio frequency power amplifier, and the circuit is in the 4G operating mode.

[0039] When the radio frequency power amplifier is in the 5G operating mode, the radio frequency signal RF1_5G enters the input tuning and matching network, and the input tuning and matching network is in the 5G mode. Through the control command of the control circuit, the bias circuit supplies bias current to the driver stage amplifier through Bias1_5G, enabling the 5G driver stage amplifier unit to amplify the signal to RF2_5G and input the amplified signal RF2_5G into the inter-stage tuning and matching network; at this time, the inter-stage tuning and matching network is also in the 5G mode, and the bias circuit supplies bias current to the power stage amplifier through Bias2_5G, enabling the 5G power stage amplifier unit to amplify the signal to RF3_5G and input the amplified signal RF3_5G into the output tuning and matching network. At this time, the 5G signal is amplified by the radio frequency power amplifier, and the circuit is in the 5G operating mode.

[0040] In addition, for different application scenarios, the requirements for the transmission power of the radio frequency power amplifier are different. The 4G amplifier unit and the 5G amplifier unit of the embodiment of the present invention can also be turned on simultaneously or work alternately. For example, when the application scenario requires a higher 4G power transmission, the 5G amplifier unit can also be turned on, and both are used to amplify the 4G signal together. In addition, for example, when the application scenario requires a smaller transmission power for the 5G signal, considering the power consumption issue, the 4G amplifier unit can also be turned on alone to transmit the 5G signal with a smaller power.

[0041] Figure 4 It shows the circuit diagrams of the driver stage and power stage bias circuits of the radio frequency power amplifier with 4G / 5G dual mode according to the embodiment of the present invention.

[0042] Refer to Figure 4 , the driver stage and power stage bias circuits are composed of two parts: the 4G bias circuit and the 5G bias circuit, which supply bias current for the 4G mode and the 5G mode respectively.

[0043] Refer to Figure 4, Vref1 and Vref2 are provided with reference voltages by an external controller, R_bias1 and R_bias2 are bias resistors, D11 and D12 are two series-connected gallium arsenide transistor HBTs, D21 and D22 are two series-connected gallium arsenide transistor HBTs. Among them, the base and collector of D11 are connected together and connected to the base of transistor D13; the base and collector of D12 are connected together and connected to the emitter of D11; in addition, capacitor C1 is connected between the collector of D11 and the ground node. The base and collector of D21 are connected together and connected to the base of transistor D23; the base and collector of D22 are connected together and connected to the emitter of D21; in addition, capacitor C2 is connected between the collector of D21 and the ground node. Vc_4G is controlled by a 4G / 5G control circuit and is connected to the collectors of D13 and D23 to generate a bias current for the drive stage of 4G through the series-connected D13 and ballast resistor Res_ballast11, and to generate a bias current for the power stage of 4G through the series-connected D23 and ballast resistor Res_ballast21. Vc_5G is controlled by a 4G / 5G control circuit and is connected to the collectors of D14 and D24 to generate a bias current for the drive stage of 5G through the series-connected D14 and ballast resistor Res_ballast12, and to generate a bias current for the power stage of 5G through the series-connected D24 and ballast resistor Res_ballast22. By separately providing bias currents for 4G and 5G, the stability of the circuit is increased. In addition, the power supply capacity range of the 4G bias circuit is small but the accuracy is high; the power supply capacity range of the 5G bias circuit is large but the accuracy is low. When both are turned on simultaneously, the accuracy and dynamic range can be compatible. Therefore, this structure provides high precision and high dynamic range for the bias current. From the perspective of efficiency and output power, the 4G bias circuit can supply power to the 4G power core unit. When in the 5G working mode, the 4G power core unit can also be turned on to transmit 5G signals with medium and low power, which is equivalent to improving the working efficiency of 5G in the medium and low working modes.

[0044] As described above, for different application scenarios, the emission power requirements for the radio frequency power amplifier are different. The 4G bias circuit unit and the 5G bias circuit unit of the embodiments of the present invention can also be turned on and work simultaneously, or work alternately. For example, when the application scenario requires transmitting a 4G signal with a higher power (for example, exceeding the first threshold), the 5G bias circuit unit can also be turned on, and both are used to amplify the 4G signal. In addition, for example, when the application scenario requires transmitting a 5G signal with a smaller power (for example, less than the second threshold), considering the power consumption problem, the 4G bias circuit unit can also be turned on alone to transmit the 5G signal with a smaller power.

[0045] Figure 5 It shows a circuit diagram of a tuned matching network for 4G / 5G dual-mode according to an embodiment of the present invention.

[0046] According to an embodiment of the present invention, at the front, middle, and rear positions of the input, inter-stage, and output, there are tunable matching networks, namely an input tunable matching network, an inter-stage tunable matching network, and an output tunable matching network. Tunable means that impedance matching adjustment can be performed to make the input and output impedances match. Refer to Figure 5 , and here the output tunable matching network is taken as an example for illustration. Those skilled in the art should be clear that the input tunable matching network and the inter-stage tunable matching network can also adopt the same structure, which does not exceed the scope of the invention.

[0047] Refer to Figure 5 , the output tunable matching network is composed of a C1 capacitor, a C2 capacitor, an L1 inductor, and an L2 inductor. The C1 capacitor and the L1 inductor are in series, and the C1 capacitor and the L1 inductor can also be composed of multiple groups of the same structure; the C2 capacitor and the L2 inductor are in series, and the C2 capacitor and the L2 inductor can also be composed of multiple groups of the same structure. The left and right positions of the C1 capacitor and the L1 inductor and the C2 capacitor and the L2 inductor can be interchanged. The adjustable part of the C1 capacitor is composed of a switch S1 and a C1_tune capacitor, and the total equivalent capacitance value of the C1 capacitor and the C1_tune is adjusted through the switch S1; the adjustable part of the C2 capacitor is composed of a switch S2 and a C2_tune capacitor, and the total equivalent capacitance value of the C2 capacitor and the C2_tune is adjusted through the switch S2. The adjustable part of the L1 inductor is composed of a switch S3 and an L1_tune inductor, and the total equivalent inductance value of the L1 inductor and the L1_tune is adjusted through the switch S3; the adjustable part of the L2 inductor is composed of a switch S4 and an L2_tune inductor, and the total equivalent inductance value of the L2 inductor and the L2_tune is adjusted through the switch S4.

[0048] Generally speaking, when the radio frequency power amplifier is in the 4G working mode or the 5G working mode, the requirements for the impedance matching network of the radio frequency power amplifier will change. For example, the transmit power in the 5G working mode is higher (e.g., exceeding the third threshold), so the impedance value of the output matching network needs to be closer to the maximum transmit power region. Through the 4G / 5G control circuit, the switches S1, S2, S3, and S4 are respectively turned on or off, so that the impedance value of the output tuning matching network is close to the maximum transmit power region. In addition, for example, in some working modes of 4G or 5G, only a moderate transmit power is required to meet the reception requirements, and more attention needs to be paid to the power consumption issue (e.g., the power consumption needs to be controlled within the first range), so the impedance value of the output tuning matching network needs to be closer to the maximum transmit efficiency region. Through the 4G / 5G control switching circuit, the switches S1, S2, S3, and S4 are respectively turned on or off, so that the impedance value of the output matching network is close to the maximum transmit efficiency region.

[0049] Those skilled in the art should understand that the same principle applies to the input tuning matching network and the inter-stage tuning matching network. Through the 4G / 5G control circuit, the internal switches are adjusted respectively, so that the best matching network structure is obtained in the 4G working mode; at the same time, in the 5G working mode, the best matching network structure is also obtained.

[0050] Although the above examples according to the present invention emphasize that the matching network of the radio frequency power amplifier should have the tuning function of dual-mode switching between 4G and 5G, and the purpose of tuning is to have the optimal matching network structure in both working modes. However, those skilled in the art should also understand that by tuning the tuned matching network, for example, by adjusting the capacitance and inductance values of C1, C2, L1, L2 and the switch states of S1, S2, S3, S4 in the matching network, the equivalent impedance generated can support the radio frequency power amplifier to work in the 4G frequency band or 5G frequency band (one or more 4G frequency bands, one or more 5G frequency bands), where the 4G frequency bands include B1, B2, B3, B4, B5, B7, B8, B12, B20, B34, B38, B39, B40, B41, etc., and the 5G frequency bands include N1, N2, N3, N4, N5, N7, N8, N12, N20, N34, N38, N39, N40, N41, N77, N78, N79, etc. According to the embodiments of the present invention, by adjusting the bias circuit and the matching network through the 4G / 5G control circuit, the radio frequency power amplifier can be switched between the 4G frequency band and the 5G frequency band. For example, the radio frequency power amplifier can work in different 5G frequency bands, work in different 4G frequency bands, or switch between different 4G and 5G frequency bands. For example, according to the embodiments of the present invention, by adjusting the bias circuit and the matching network through the 4G / 5G control circuit, 1) in the 4G mode, the 4G amplifier unit can be switched between different 4G frequency bands; 2) in the 5G mode, the 5G amplifier unit can be switched between different 5G frequency bands; 3) in the 4G mode, when high-power transmission is required, the 5G amplifier unit can be switched to operate in the 4G frequency band; 4) in the 5G mode, when a 5G signal with a smaller transmission power is required, the 4G amplifier unit can be switched to operate in the 5G frequency band.

[0051] By integrating the 4G / 5G power amplifier units on the same chip, according to the embodiments of the present invention, the number of chips of the overall module and the overall cost are reduced, and it is easy to integrate and implement large-scale mass production.

[0052] Although the present disclosure has been described with exemplary embodiments, various changes and modifications can be suggested to those skilled in the art. The present disclosure is intended to cover such changes and modifications that fall within the scope of the appended claims.

[0053] Any description in the present invention should not be construed as implying that any specific element, step or function is an essential element that must be included within the scope of the claims. The scope of the patent subject matter is defined only by the claims.

Claims

1. A radio frequency power amplifier, comprising: a 4G amplifier unit, a 5G amplifier unit, a bias circuit configured to provide a configured current to the 4G amplifier unit and the 5G amplifier unit respectively, a matching network configured to provide a tunable impedance according to the operating mode of the radio frequency power amplifier, and a 4G / 5G control circuit configured to control the matching network and the bias circuit so that the 4G amplifier unit and the 5G amplifier unit operate in the 4G frequency band or the 5G frequency band, wherein the 4G / 5G control circuit is configured to, when it is necessary to transmit 4G power exceeding a first threshold, turn on the 4G amplifier unit and the 5G amplifier unit simultaneously to amplify the 4G signal, wherein the 4G / 5G control circuit is configured to, when it is necessary to transmit 5G power less than a second threshold, turn on the 4G amplifier unit alone to amplify the 5G signal, and wherein the 4G / 5G control circuit is configured to, when it is necessary to transmit a transmission power exceeding a third threshold, adjust the impedance value of the matching network to be close to the maximum transmission power region.

2. The radio frequency power amplifier according to claim 1, wherein The 4G frequency band includes B1, B2, B3, B4, B5, B7, B8, B12, B20, B34, B38, B39, B40, B41, and the 5G frequency band includes N1, N2, N3, N4, N5, N7, N8, N12, N20, N34, N38, N39, N40, N41, N77, N78, N79.

3. The RF power amplifier according to claim 1, wherein The 4G amplifier unit and the 5G amplifier unit use the same radio frequency signal input port and radio frequency signal output port.

4. The radio frequency power amplifier according to claim 1, wherein, The matching network includes an input matching network, an inter-stage matching network, and an output matching network.

5. The radio frequency power amplifier according to claim 4, wherein, The matching network includes a first adjustable part composed of an adjustable capacitor and a first switch for adjusting the equivalent capacitance value of the matching network.

6. The radio frequency power amplifier according to claim 4, wherein, The matching network includes a second adjustable part composed of an adjustable inductor and a second switch for adjusting the equivalent inductance value of the matching network.

7. The radio frequency power amplifier according to claim 1, wherein, The bias circuit consists of a 4G bias circuit and a 5G bias circuit, wherein the 4G / 5G control circuit controls the conduction and cutoff of the 4G bias circuit and the 5G bias circuit to provide a first bias current to the 4G amplifier unit when the 4G bias circuit is working, and provide a second bias current to the 5G amplifier unit when the 5G bias circuit is working.

8. The radio frequency power amplifier according to claim 1, wherein the 4G / 5G control circuit is configured to, when the power consumption needs to be controlled within a first range, adjust the impedance value of the matching network to be close to the maximum transmission efficiency region.

9. The radio frequency power amplifier according to claim 2, wherein the 4G / 5G control circuit is configured to, in the 4G mode, adjust the matching network and the bias circuit so that the 4G amplifier unit switches between different 4G frequency bands; and in the 5G mode, adjust the matching network and the bias circuit so that the 5G amplifier unit switches between different 5G frequency bands.

Images