Heat power generation module and heat power generation device provided with same

Abstract

A thermal power generation module includes: a first thermal power generation element having a first thermoelectric conversion layer and a first electrolyte layer that overlap each other along a stacking direction; a second thermal power generation element that overlaps the first thermal power generation element in the stacking direction and has a second thermoelectric conversion layer and a second electrolyte layer that overlap each other along the stacking direction; a first collector located at one end of the stacking direction; a second collector located at the other end of the stacking direction; and an electron conduction layer located between the first thermal power generation element and the second thermal power generation element in the stacking direction.

Description

Technical Field

[0001] This disclosure relates to a thermal power generation module and a thermal power generation device having the same. Background Technology

[0002] As a method of generating electricity by utilizing heat from geothermal energy or factory exhaust, methods utilizing the Seebeck effect can be cited. Alternatively, as a method of generating electricity by utilizing heat without utilizing the Seebeck effect, the heat-utilizing power generation element disclosed in Patent Document 1 can be cited. Patent Document 1 discloses a method of converting thermal energy into electrical energy by combining an electrolyte and a thermoelectric conversion material that generates thermally excited electrons and holes. By using such a heat-utilizing power generation element as a power source for electronic components, a stable power supply can be provided to the electronic components, even in high-temperature environments (e.g., above 50°C) where ordinary batteries are prone to degradation.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2017 / 038988. Summary of the Invention

[0006] The aforementioned heat-based power generation devices can be used under various conditions and for various applications. Therefore, it is desirable to develop heat-based power generation devices that can perform according to demand (e.g., high electromotive force, high output current, etc.).

[0007] One aspect of this disclosure is to provide a thermal power generation module that can perform as needed and a thermal power generation device having the same.

[0008] The thermal power generation module disclosed in one aspect comprises: a first thermal power generation element having a first thermoelectric conversion layer and a first electrolyte layer that overlap each other along the stacking direction; a second thermal power generation element that overlaps with the first thermal power generation element in the stacking direction and has a second thermoelectric conversion layer and a second electrolyte layer that overlap each other along the stacking direction; a first collector located at one end of the stacking direction; and a second collector located at the other end of the stacking direction; and an electron conduction layer located between the first thermal power generation element and the second thermal power generation element in the stacking direction, wherein the first thermal power generation element and the second thermal power generation element are located between the first collector and the second collector in the stacking direction.

[0009] The aforementioned thermal power generation module has a first thermal power generation element and a second thermal power generation element that are located between the first collector and the second collector in the stacking direction and overlap each other. For example, by connecting the first thermal power generation element and the second thermal power generation element in series, the electromotive force of the thermal power generation module can be increased. Alternatively, for example, by connecting the first thermal power generation element and the second thermal power generation element in parallel, the output current of the thermal power generation module can be increased. By having multiple thermal power generation elements in such a thermal power generation module and appropriately adjusting the connection method of each thermal power generation element, a thermal power generation module that can perform according to demand can be provided.

[0010] In the aforementioned thermal power generation module, the first and second thermal power generation elements can be connected in series via an electron conduction layer. Alternatively, the first and second thermal power generation elements can be separated by the electron conduction layer. Therefore, electrons within the thermal power generation module can easily flow only in the desired direction, thus effectively increasing the electromotive force of the thermal power generation module.

[0011] The first thermoelectric conversion layer comprises an electron thermally excited layer and an electron transport layer stacked in the stacking direction. The electron thermally excited layer may be located between the electron transport layer and the first electrolyte layer. The electron conduction layer is in contact with the electron transport layer and the second electrolyte layer. The work function or band gap of the electron conduction layer may be larger than that of the electron transport layer. In this case, oxidation of the electrolyte at the interface between the electron conduction layer and the second electrolyte layer can be prevented. Therefore, electrons in the second electrolyte layer tend to flow only in the desired direction.

[0012] The second electrolyte layer is an organic or inorganic electrolyte layer containing metal ions, and the electron-conducting layer may include a metal, graphite, conductive oxide, or electron-conducting polymer material with a lower ionic tendency than the metal ions in the second electrolyte layer. In this case, even when using an organic or inorganic electrolyte layer, electrons in the second electrolyte layer tend to flow only in the desired direction.

[0013] In the above case, the metal in the electron conduction layer that has a lower ionization tendency than the metal ions in the second electrolyte layer may include at least one of platinum, gold, silver and aluminum alloy, and the conductive oxide may include at least one of indium tin oxide and fluorine-doped tin oxide.

[0014] Another aspect of this disclosure relates to a thermal power generation module comprising: a first thermal power generation element having a first thermoelectric conversion layer and a first electrolyte layer overlapping each other along a stacking direction; a second thermal power generation element overlapping the first thermal power generation element in the stacking direction, and having a second thermoelectric conversion layer and a second electrolyte layer overlapping each other along the stacking direction; a first collector located at one end of the stacking direction; a second collector located at the other end of the stacking direction; and an insulating member disposed between the first and second thermal power generation elements in the stacking direction, the first and second thermal power generation elements being located between the first and second collectors in the stacking direction, and the first and second thermal power generation elements being connected in series. This thermal power generation module, by appropriately adjusting the connection method of each thermal power generation element, can provide a thermal power generation module that performs as needed. Furthermore, an insulating member is disposed between the first and second thermal power generation elements, and the first and second thermal power generation elements are connected in series. Therefore, the thermal power generation module viewed from the stacking direction can be miniaturized, and the output current of the thermal power generation module can be increased.

[0015] The aforementioned thermal power generation module further includes a third collector located between the insulating component and the first thermal power generation element in the stacking direction; and a fourth collector located between the insulating component and the second thermal power generation element in the stacking direction. The first collector and the third collector are electrically connected to each other, and the second collector and the fourth collector can be electrically connected to each other.

[0016] The aforementioned thermal power generation module further comprises: a third thermal power generation element located between the insulating component and the second thermal power generation element in the stacking direction, and having a third thermoelectric conversion layer and a third electrolyte layer overlapping each other along the stacking direction; and an electron conduction layer located between the second and third thermal power generation elements in the stacking direction, wherein the second and third thermal power generation elements can be connected in series through the electron conduction layer. In this case, both an increase in the electromotive force of the thermal power generation module and an increase in the current output from the thermal power generation module can be achieved.

[0017] The first thermoelectric conversion layer has an electron thermal excitation layer and an electron transport layer stacked in the stacking direction. The electron thermal excitation layer is located between the electron transport layer and the first electrolyte layer. The electron conduction layer is in contact with the electron transport layer and the third electrolyte layer. The work function or band gap of the electron conduction layer can be larger than that of the electron transport layer. In this case, oxidation of the electrolyte at the interface between the electron conduction layer and the third electrolyte layer can be prevented. Therefore, electrons in the third electrolyte layer can easily flow only in the desired direction.

[0018] Another aspect of this disclosure relates to a thermal power generation device comprising the aforementioned plurality of thermal utilization power generation modules. In each of these modules, a first thermal utilization power generation element and a second thermal utilization power generation element are connected in series. The plurality of thermal utilization power generation modules are arranged in parallel and integrated with each other in a direction intersecting the stacking direction. In this case, a thermal power generation device that simultaneously achieves an increase in electromotive force and an increase in output current can be realized. Therefore, for example, by adjusting the number of thermal utilization power generation modules included in the thermal power generation device, a thermal power generation device whose performance can be adjusted according to demand can be provided.

[0019] Another aspect of this disclosure relates to a thermal power generation device comprising the aforementioned plurality of thermal utilization power generation modules. In each of these modules, a first thermal utilization power generation element and a second thermal utilization power generation element are connected in series. The plurality of thermal utilization power generation modules are arranged in a direction intersecting the stacking direction, connected in series, and integrated with each other. In this case, an increase in electromotive force can be further achieved. Therefore, for example, by adjusting the number of thermal utilization power generation modules included in the thermal power generation device, a thermal power generation device capable of performing as needed can be provided.

[0020] The aforementioned thermal power generation device may further include insulating components disposed between adjacent thermal power generation modules. In this case, short circuits between adjacent thermal power generation modules can be effectively suppressed.

[0021] Invention Effects

[0022] According to one aspect of this disclosure, a thermal utilization power generation module and a thermal power generation device having the same can be provided, which can perform as needed. Attached Figure Description

[0023] Figure 1 This is a schematic cross-sectional view showing the heat utilization power generation module according to the first embodiment.

[0024] Figure 2 (a) is a schematic cross-sectional view showing a single thermal power generation element and terminals. Figure 2 (b) is a schematic diagram illustrating the power generation mechanism of the heat utilization power generation element.

[0025] Figure 3 This is a schematic cross-sectional view of the heat utilization power generation module involved in the comparative example.

[0026] Figure 4 (a) is a schematic diagram illustrating the movement of electrons within the heat-generating module involved in the comparative example. Figure 4 (b) is a schematic diagram illustrating the movement of electrons within the thermal utilization power generation module according to the first embodiment.

[0027] Figure 5This is a schematic cross-sectional view showing the heat utilization power generation module involved in the second embodiment.

[0028] Figure 6 This is a schematic cross-sectional view showing the heat utilization power generation module involved in the modified example of the second embodiment.

[0029] Figure 7 This is a schematic cross-sectional view showing an example of a thermal power generation device.

[0030] Figure 8 This is a schematic cross-sectional view showing another example of a thermal power generation device. Detailed Implementation

[0031] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that in the following description, the same symbols are used for the same elements or elements having the same function, and repeated descriptions are omitted.

[0032] (First Implementation)

[0033] First, refer to Figure 1 The structure of the heat utilization power generation module involved in the first embodiment is explained. Figure 1 This is a schematic cross-sectional view showing the heat utilization power generation module according to the first embodiment. Figure 1 The thermal power generation module 1 shown is an assembly of components (i.e., a thermal power generator that converts thermal energy into electrical energy) that generate electricity by supplying heat from the outside. The thermal power generation module 1 includes multiple thermal power generation elements 2, multiple electron conduction layers 3, and a pair of collectors 4 and 5. The shape of the thermal power generation module 1 is not particularly limited. From a top view, the shape of the thermal power generation module 1 can be, for example, a rectangle or other polygonal shape, or it can be circular or elliptical.

[0034] Multiple thermally powered energy generation elements 2, multiple electron-conducting layers 3, and a pair of collectors 4 and 5 overlap each other along a predetermined direction. The multiple thermally powered energy generation elements 2 and the multiple electron-conducting layers 3 are located between the pair of collectors 4 and 5. Hereinafter, the predetermined direction will be simply referred to as the "stack direction". Furthermore, the term "identical" in this specification includes not only "completely identical" but also "substantially identical".

[0035] Multiple thermally activated power generation elements 2 are all thermoelectric generators of the same shape, generating thermally excited electrons and holes by supplying heat from the outside. The generation of thermally excited electrons and holes using the thermally activated power generation elements 2 is carried out, for example, at temperatures between 25°C and 300°C. From the viewpoint of generating a sufficient number of thermally excited electrons and holes, when using the thermally activated power generation module 1, the thermally activated power generation elements 2 can be heated to, for example, above 50°C. From the viewpoint of effectively preventing deterioration of the thermally activated power generation elements 2, when using the thermally activated power generation module 1, the thermally activated power generation elements 2 can be heated to, for example, below 200°C. The temperature at which a sufficient number of thermally excited electrons are generated is, for example, "thermally excited electron density of thermally activated power generation element 2 10..." 15 / cm 3 The above temperatures.

[0036] In the first embodiment, multiple thermal power generation elements 2 are stacked on top of each other along the stacking direction and connected in series. The number of multiple thermal power generation elements 2 varies depending on the performance requirements of the thermal power generation module 1.

[0037] The thermal power generation element 2 is a laminate having a thermoelectric conversion layer 12 and an electrolyte layer 13 that overlap each other in the stacking direction. The thermoelectric conversion layer 12 has an electron thermal excitation layer 12a and an electron transport layer 12b that overlap each other in the stacking direction. In the first embodiment, the stacking order of the electron thermal excitation layer 12a, the electron transport layer 12b and the electrolyte layer 13 of each thermal power generation element 2 is consistent.

[0038] The electron thermal excitation layer 12a is a layer that utilizes heat to generate thermally excited electrons and holes using the power generation element 2, and is in contact with the electrolyte layer 13. The electron thermal excitation layer 12a includes a thermoelectric conversion material. The thermoelectric conversion material is a material that increases the number of excited electrons at high temperatures, such as metal semiconductors (Si, Ge), tellurium compound semiconductors, silicon-germanium (Si-Ge) compound semiconductors, silicide compound semiconductors, cobaltite compound semiconductors, inclusion compound semiconductors, Whistler compound semiconductors, semi-Whistler compound semiconductors, metal oxide semiconductors, organic semiconductors, and other semiconductor materials. From the viewpoint of generating sufficient thermally excited electrons at relatively low temperatures, the thermoelectric conversion material can be germanium (Ge).

[0039] The electron thermally excited layer 12a may include multiple thermoelectric conversion materials. The electron thermally excited layer 12a may include materials other than thermoelectric conversion materials. For example, the electron thermally excited layer 12a may include adhesives for bonding thermoelectric conversion materials, sintering aids for assisting in the forming of thermoelectric conversion materials, etc. The electron thermally excited layer 12a may be formed, for example, by methods such as doctor blade method, screen printing method, spark plasma sintering method, compression molding method, sputtering method, vacuum evaporation method, chemical vapor deposition method (CVD method), spin coating method, etc.

[0040] The electron transport layer 12b is a layer that transports thermally excited electrons generated by the electron thermally excited layer 12a to the outside. The electron transport layer 12b is located on the opposite side of the electrolyte layer 13, intermediate with respect to the electron thermally excited layer 12a, in the stacking direction. Therefore, in the thermal power generation element 2, the electron transport layer 12b, the electron thermally excited layer 12a, and the electrolyte layer 13 are stacked sequentially in the stacking direction. The electron transport layer 12b includes an electron transport material. The electron transport material is a material whose conduction band potential is the same as or higher than that of the thermoelectric conversion material. The difference between the conduction band potential of the electron transport material and the conduction band potential of the thermoelectric conversion material is, for example, 0.01V to 0.1V. Examples of electron transport materials include semiconductor materials and electron transportable organic materials. The electron transport layer 12b is formed, for example, by methods such as doctor blade method, screen printing method, discharge plasma sintering method, compression molding method, sputtering method, vacuum evaporation method, CVD method, spin coating method, etc.

[0041] The semiconductor material used for the electron transport material is, for example, the same as the semiconductor material contained in the electron thermally excited layer 12a. The electron transport organic material is, for example, an N-type conductive polymer, an N-type low-molecular-weight organic semiconductor, or a π-electron conjugated compound. The electron transport layer 12b may include multiple electron transport materials. The electron transport layer 12b may include materials other than electron transport materials. For example, the electron transport layer 12b may include adhesives for bonding electron transport materials, sintering aids for assisting in the molding of electron transport materials, etc. From the viewpoint of electron transport, the semiconductor material can be n-type Si. The electron transport layer 12b containing n-type Si is formed, for example, by doping a silicon layer with phosphorus, etc.

[0042] The electrolyte layer 13 is a layer of electrolyte in which charge-transporting ion pairs can move internally at a temperature at which a sufficient number of thermally excited electrons are generated using the thermally activated power generation element 2. Current flows through the electrolyte layer 13 as these charge-transporting ion pairs move within it. A "charge-transporting ion pair" is a stable pair of ions with different valences, such as metal ions. If one ion is oxidized or reduced, it becomes the ion of the other, thus allowing electrons and holes to move. The redox potential of the charge-transporting ion pairs within the electrolyte layer 13 is negative compared to the valence electron band potential of the thermoelectric conversion material contained in the thermally activated electron layer 12a. Therefore, at the interface between the thermally activated electron layer 12a and the electrolyte layer 13, the easily oxidized ion in the charge-transporting ion pair is oxidized, becoming the ion of the other. The electrolyte layer 13 may include ions other than charge-transporting ion pairs. The electrolyte layer 13 can be formed, for example, by a doctor blade method, screen printing, sputtering, vacuum evaporation, CVD, sol-gel method, or spin coating.

[0043] The electrolyte contained in the electrolyte layer 13 is not particularly limited. This electrolyte can be, for example, a liquid electrolyte, a solid electrolyte, or a gel electrolyte. In the first embodiment, the electrolyte layer 13 includes a solid electrolyte. The solid electrolyte is, for example, a substance that is physically and chemically stable at the aforementioned temperature, and may include multivalent ions. Examples of solid electrolytes include sodium ion conductors, copper ion conductors, iron ion conductors, lithium ion conductors, silver ion conductors, hydrogen ion conductors, strontium ion conductors, aluminum ion conductors, fluoride ion conductors, chloride ion conductors, oxide ion conductors, etc. The solid electrolyte can be, for example, polyethylene glycol (PEG) or its derivatives with a molecular weight of 600,000 or less. When the solid electrolyte is PEG, multivalent ion sources such as copper ions and iron ions can be included in the electrolyte layer 13. From the viewpoint of improving lifetime, alkali metal ions can be included in the electrolyte layer 13. The molecular weight of PEG is equivalent to the weight-average molecular weight determined by gel permeation chromatography using a polystyrene converter. The electrolyte layer 13 can be a hole transport semiconductor.

[0044] Electrolyte layer 13 can be an organic electrolyte layer or an inorganic electrolyte layer. The choice of whether electrolyte layer 13 is organic or inorganic depends on the composition of electron conduction layer 3. An organic electrolyte layer may be an electrolyte layer whose main component is one or more organic compounds. Organic compounds include at least one of low-molecular-weight organic compounds and high-molecular-weight organic compounds. An inorganic electrolyte layer may be an electrolyte layer whose main component is one or more inorganic compounds. Inorganic compounds can be monomers or inorganic compounds. Inorganic compounds may be included in organic electrolyte layers, or organic compounds may be included in inorganic electrolyte layers. The aforementioned organic and inorganic compounds may be electrolytes or different from electrolytes. For example, electrolyte layer 13 may contain organic or inorganic compounds that function as binders for binding electrolytes, sintering aids for assisting in electrolyte molding, etc. Organic compounds may include, for example, PEDOT / PSS, N-methylpyrrolidone (NMP), acetonitrile, etc., while inorganic compounds may include, for example, silicon dioxide (SiO2), titanium dioxide (TiO2), aluminum oxide (AlOx), etc. Organic compounds with a molecular weight of 10,000 or more are classified as high molecular weight organic compounds.

[0045] The electron conduction layer 3 is a layer used to conduct electrons moving within the thermal power generation module 1 only in a predetermined direction. In the first embodiment, the electron conduction layer 3 is a layer that exhibits electrical conductivity but not ionic conductivity. Therefore, the electron conduction layer 3 can also be referred to as an ion conduction prevention layer. The electron conduction layer 3 is located between adjacent thermal power generation elements 2 in the stacking direction. Therefore, in the stacking direction, two adjacent thermal power generation elements 2 are connected in series with each other through the electron conduction layer 3. In the first embodiment, the electron conduction layer 3 is respectively connected to the electrolyte layer 13 of one thermal power generation element 2 and the electron transport layer 12b of the other thermal power generation element 2.

[0046] The electron conduction layer 3 is formed, for example, by methods such as doctor blade method, screen printing method, electric discharge plasma sintering method, compression molding method, sputtering method, vacuum evaporation method, CVD method, spin coating method, and plating method.

[0047] For example, when the electrolyte layer 13 is an organic electrolyte layer, the electron conduction layer 3 located between adjacent thermal power generation elements 2 is disposed on the surface of the electron transport layer 12b included in one thermal power generation element 2 (the surface opposite to the surface where the electron thermal excitation layer 12a is disposed). For example, when the electrolyte layer 13 is an inorganic electrolyte layer, the electron conduction layer 3 is disposed on the surface of the electrolyte layer 13 included in the thermal power generation element 2. The thickness of the electron conduction layer 3 is, for example, 0.1 μm to 100 μm.

[0048] In the first embodiment, the work function (or band gap) of the electron conduction layer 3 is larger than the band gap of the electron transport layer 12b. The difference between the work function or band gap of the electron conduction layer 3 and the band gap of the electron transport layer 12b is, for example, 0.1 eV or more. The valence band potential of the electron conduction layer 3 can be higher than the reduction potential of the ions contained in the electrolyte layer 13. In this case, oxidation reactions of the aforementioned ions are less likely to occur at the interface between the electron conduction layer 3 and the electrolyte layer 13. For example, when the electrolyte layer is an organic electrolyte layer, the electron conduction layer 3 includes conductive oxides such as ITO (indium tin oxide) and FTO (fluorine-doped tin oxide), electron conduction polymer materials, etc. For example, when the electrolyte layer is an inorganic electrolyte layer, the electron conduction layer 3 includes Pt (platinum), Au (gold), Ag (silver), aluminum alloys (e.g., duralumin, Si-Al alloy), electron conduction polymer materials, etc. The electron conduction polymer material is, for example, PEDOT / PSS. The conduction band potential of the electron conduction layer 3 can be lower than the conduction band potential of the electron transport layer 12b. In this case, electrons readily move from the electron transport layer 12b to the electron conduction layer 3. If the electrolyte layer 13 contains metal ions, the electron conduction layer 3 may comprise a metal, graphite, conductive oxide, or electron-conducting polymer material with a lower ionization tendency than the metal ions. Examples of such metals, conductive oxides, and electron-conducting polymer materials are as described above.

[0049] Collector 4 is an electrode that functions as one of the positive and negative electrodes of the thermal power generation module 1, and is located at one end of the thermal power generation module 1 in the stacking direction. Collector 5 is the other electrode that functions as both the positive and negative electrodes of the thermal power generation module 1, and is located at the other end of the thermal power generation module 1 in the stacking direction. Collectors 4 and 5 are, for example, conductive plates having a single-layer structure or a stacked structure, respectively. The conductive plates are, for example, metal plates, alloy plates, and composite plates thereof. From the viewpoint of maximizing the performance of the thermal power generation module 1, at least one of collectors 4 and 5 can exhibit high thermal conductivity. Since a temperature difference is not required in the thermal power generation module 1, it is preferable that both collectors 4 and 5 exhibit high thermal conductivity. For example, the thermal conductivity of at least one of collectors 4 and 5 can be 10 W / m·K or higher.

[0050] Next, refer to Figure 2 This section provides an overview of the power generation mechanism of the heat-utilizing power generation element. Figure 2 (a) is a schematic cross-sectional view showing a single thermal power generation element and terminals. Figure 2 (b) is a schematic diagram illustrating the power generation mechanism of the heat utilization power generation element. For illustration purposes, [the diagram will be shown here]. Figure 2 The charge transport ion pairs contained in the electrolyte layer 13 shown in (a) and (b) are denoted as iron ions (Fe). 2+ Fe 3+ ).like Figure 2 As shown in (b), if the electron thermal excitation layer 12a absorbs heat under high temperature conditions, then excited electrons e are generated in the electron thermal excitation layer 12a. － The electron e － It moves in the electron transport layer 12b. Therefore, a hole h is generated in the electron thermal excitation layer 12a. + The hole h + At the first interface BS1 between the electron thermally excited layer 12a and the electrolyte layer 13, Fe 2+ Oxidation. That is, the hole h + BS1 takes away Fe in the first interface 2+ The electrons. Therefore, Fe located at the first interface BS1. 2+ Become Fe 3+ On the other hand, excess electrons e are formed within the electron transport layer 12b. － The electrons move outward, reaching the electrolyte layer 13 through resistor R and terminal T. － Fe is placed in the second cross section BS2 between the electrolyte layer 13 and the terminal T. 3+ Reduction. Therefore, Fe located at the second cross-section BS2... 3+ Become Fe 2+ Furthermore, Fe is oxidized at the first interface BS1. 3+ Fe diffuses toward the second cross-section BS2 and is reduced at the second cross-section BS2. 2+ Diffusion occurs towards the first interface BS1. Therefore, the aforementioned redox reaction between the first interface BS1 and the second cross-section BS2 is maintained. Electrons are generated through this thermal excitation, and a redox reaction occurs, thereby generating electricity using the thermal power generation element 2. The power generated when electrons pass through resistor R is equivalent to the power generated.

[0051] Next, the effects of the heat utilization power generation module 1 according to the first embodiment described above will be explained using the following comparative examples. Figure 3 This is a schematic cross-sectional view of the heat utilization power generation module involved in the comparative example. Figure 3 The thermal power generation module 101 shown differs from the thermal power generation module 1 of the first embodiment in that it lacks an electron conduction layer. Therefore, in the thermal power generation module 101, each thermal power generation element 2 is in contact with each other and connected in series. Thus, in adjacent thermal power generation elements 2, the electron transport layer 12b contained in one thermal power generation element 2 is in contact with the electrolyte layer 13 contained in the other thermal power generation element 2.

[0052] Figure 4 (a) is a schematic diagram illustrating the movement of electrons within the heat-generating module involved in the comparative example. Figure 4(b) is a schematic diagram illustrating the movement of electrons within the heat-utilizing power generation module according to the first embodiment. For the purpose of explanation, Figure 4 In (a) and (b), one of the adjacent thermal power generation elements 2 is designated as the first thermal power generation element 11, and the other is designated as the second thermal power generation element 21. The electron thermal excitation layer 12a includes a first semiconductor, the electron transport layer 12b includes a second semiconductor, and the electrolyte layer 13 includes a charge transport ion pair (I1, I2). Furthermore, the redox potential of the charge transport ion pair included in the electrolyte layer 13 is located within the band gap of the first semiconductor and is lower than the valence electron band potential of the first semiconductor. Moreover, the valence electron band potential of the second semiconductor is higher than that of the first semiconductor. That is, the redox potential of the charge transport ion pair is lower than the valence electron band potential of the second semiconductor. The valence number of ion I1 is greater than that of ion I2.

[0053] like Figure 4 As shown in (a), the electrolyte layer 13 of the first thermal power generation element 11 is connected to both the electron thermal excitation layer 12a included in the first thermal power generation element 11 and the electron transport layer 12b included in the second thermal power generation element 21. As described above, in the first thermal power generation element 11, ions I1 diffuse towards the first interface BS1 via the electrolyte layer 13. Although not shown, ions I2 diffuse towards the third interface BS3 between the electron transport layer 12b of the second thermal power generation element 21 and the electrolyte layer 13 of the first thermal power generation element 11. Therefore, electrons e － The electrons move from the second heat-utilizing power generation element 21 to the first heat-utilizing power generation element 11. That is, electrons e － It moves along one side of the stacking direction of the thermal utilization power generation module 101.

[0054] Here, the electron transport layer 12b includes a second semiconductor, thus allowing the generation of electrons e that are also excited in the electron transport layer 12b. － Through this electron e － The electron moves in the electrolyte layer 13, thereby generating holes h in the electron transport layer 12b. + As described above, the valence electron band potential of the second semiconductor is higher than that of the first semiconductor, and the redox potential of the charge transport ion pair is lower than that of the second semiconductor. Therefore, the holes h generated in the electron transport layer 12b... + At the third interface BS3, the ions I1 contained in the electrolyte layer 13 are oxidized. Therefore, oxidation reactions occur at both ends of the electrolyte layer 13 in the stacking direction. In this case, ions I1 diffuse not only towards the first interface BS1 but also towards the third interface BS3. Therefore, in the electrolyte layer 13, not only electrons... －The electrons move from the second heat-generating element 21 to the first heat-generating element 11, and the electrons e － It also moves from the first thermal power generation element 11 to the second thermal power generation element 21. That is, if multiple thermal power generation elements 2 are simply stacked, then in the electrolyte layer 13, electrons e － The thermal power generation module 101 can be moved to both sides in the stacking direction. In this case, the potential difference between adjacent thermal power generation elements 2 is less likely to diffuse. Therefore, in the comparative example, when using multiple thermal power generation elements 2, it is not easy to increase the electromotive force of the thermal power generation module 101. Therefore, the output of the thermal power generation module 101 may be lower than the theoretical value.

[0055] In contrast, in the heat utilization power generation module 1 of the first embodiment, such as Figure 4 As shown in (b), an electron conduction layer 3 is provided between adjacent thermal power generation elements 2. By providing such an electron conduction layer 3, the electrolyte layer 13 of one thermal power generation element 2 is separated from the electron transport layer 12b of the other thermal power generation element 2. In this case, even if a hole h is generated in the electron transport layer 12b... + The hole h + Electrons cannot be removed from ions I1 contained in electrolyte layer 13. Therefore, the oxidation reaction of ions I1 can only occur at the first interface BS1. Therefore, ions I1 contained in electrolyte layer 13 do not easily diffuse at the fourth interface BS4 between electrolyte layer 13 and electron conduction layer 3. That is, ions I1 tend to diffuse only towards the first interface BS1 in electrolyte layer 13. Therefore, the electrons e in the heat utilization power generation module 1... － It is easy for the energy to flow only in the desired direction. Therefore, in the thermal power generation module 1, the potential difference between adjacent thermal power generation elements 2 can be easily diffused, thus effectively increasing the electromotive force of the thermal power generation module 1. Furthermore, by adjusting the number of thermal power generation elements 2 included in the thermal power generation module 1, the electromotive force of the thermal power generation module 1 can be set to a value that meets the requirements.

[0056] In the first embodiment, the thermoelectric conversion layer 12 has an electron thermal excitation layer 12a and an electron transport layer 12b stacked in the stacking direction. The electron thermal excitation layer 12a is located between the electron transport layer 12b included in one thermal power generation element 2 and the electrolyte layer 13 included in the other thermal power generation element 2. The electron conduction layer 3 is in contact with the electron transport layer 12b and the electrolyte layer 13. The work function or band gap of the electron conduction layer 3 can be larger than the band gap of the electron transport layer 12b. In this case, oxidation reaction of the electrolyte (ion I1) at the fourth interface BS4 between the electron conduction layer 3 and the electrolyte layer 13 can be prevented. Therefore, the electrons e in the electrolyte layer 13 －It flows easily in the desired direction.

[0057] In the first embodiment, the electrolyte layer 13 is an organic electrolyte layer or an inorganic electrolyte layer comprising metal ions, and the electron conduction layer 3 may comprise a metal, graphite, conductive oxide, or electron-conducting polymer material with a lower ionization tendency than the metal ions in the electrolyte layer 13. In this case, even when an organic electrolyte layer or an inorganic electrolyte layer is used as the electrolyte layer 13, the electrons in the electrolyte layer 13... － It is easy to flow only in the desired direction.

[0058] In the first embodiment, the electron conduction layer 3 may include at least one of platinum, gold, silver and aluminum alloy as the metal with a lower ionization tendency than the metal ions in the electrolyte layer 13, and may include at least one of indium tin oxide and fluorine-doped tin oxide as the conductive oxide.

[0059] (Second Implementation)

[0060] The heat utilization power generation module according to the second embodiment will be described below. In the description of the second embodiment, the descriptions that are repeated in the first embodiment are omitted, and the parts that are different from the first embodiment are described. That is, within the technically permissible range, the descriptions of the first embodiment can be appropriately used in the second embodiment.

[0061] Figure 5 This is a schematic cross-sectional view showing the heat utilization power generation module according to the second embodiment. For example... Figure 5 As shown, the thermal power generation module 1A includes multiple thermal power generation elements 2 stacked on top of each other in the stacking direction, multiple collectors 4A and 5A, external electrodes 31 and 32, and multiple insulating components 33.

[0062] Each thermal power generation element 2 is located between collectors 4A and 5A in the stacking direction. That is, each thermal power generation element 2 is sandwiched between collectors 4A and 5A in the stacking direction. In the thermal power generation module 1A, an insulating component 33 is provided between each thermal power generation element 2. Specifically, an insulating component 33 is provided between adjacent collectors 4A and 5A in the stacking direction. Therefore, between two adjacent thermal power generation elements 2, collectors 5A, insulating components 33, and collectors 4A are stacked sequentially along the stacking direction. In other words, in the stacking direction, a collector 5A is provided between an insulating component 33 and another thermal power generation element 2, and a collector 4A is provided between an insulating component 33 and another thermal power generation element 2. Between adjacent insulating components 33 in the stacking direction, collectors 4A, thermal power generation elements 2, and collectors 5A are stacked sequentially.

[0063] Collector 4A is a conductor that functions as one of the positive and negative electrodes of the heat-generating element 2, and is generally plate-shaped. Collector 5A is a conductor that functions as the other of the positive and negative electrodes of the heat-generating element 2, and is also generally plate-shaped. Collectors 4A and 5A are made of, for example, the same material as collectors 4 and 5 in the first embodiment described above. A portion of collectors 4A and 5A protrudes from each heat-generating element 2 in a direction intersecting the stacking direction (e.g., a horizontal direction). From the viewpoint of preventing contact between the external electrodes 31 and 32, a portion of collector 4A and a portion of collector 5A are preferably opposite to each other.

[0064] External electrode 31 is a conductor that functions as one of the positive and negative electrodes of the thermal power generation module 1A and is electrically connected to each collector electrode 4A. External electrode 32 is a conductor that functions as the other of the positive and negative electrodes of the thermal power generation module 1A and is electrically connected to each collector electrode 5A. Therefore, in the thermal power generation module 1A, each thermal power generation element 2 is connected in parallel with each other. From the viewpoint of maximizing the performance of the thermal power generation module 1A, at least one of the external electrodes 31 and 32 can exhibit high thermal conductivity. For example, the thermal conductivity of at least one of the external electrodes 31 and 32 can be 10 W / m·K or higher. Since the external electrodes 31 and 32 are separate from the thermal power generation elements 2, the external electrodes 31 and 32 can include copper or the like. Since a temperature difference is not required in the thermal power generation module 1A, both external electrodes 31 and 32 preferably exhibit high thermal conductivity.

[0065] The insulating component 33 is an insulator that prevents short circuits between adjacent heat-generating elements 2 in the stacking direction, and is generally plate-shaped. In the horizontal direction, the edge of the insulating component 33 may or may not align with the edge of the heat-generating element 2. From the viewpoint of optimal function of the insulating component 33, in the horizontal direction, the edge of the insulating component 33 may be located outside the edge of the heat-generating element 2. In this case, at least a portion of the edge of the insulating component 33 may be located outside the edge of the heat-generating element 2. The insulating component 33 may include, for example, an organic or inorganic insulator indicating heat resistance. Organic insulators are, for example, heat-resistant plastics. Inorganic insulators are, for example, ceramics such as alumina. From the viewpoint of optimal performance of each heat-generating module 1, the insulating component 33 may exhibit high thermal conductivity. For example, the thermal conductivity of the insulating component 33 may be 10 W / m·K. Alternatively, the insulating component 33 may include components, particles, etc., exhibiting high thermal conductivity. This component may exhibit electrical conductivity. In this case, the component is completely covered by an insulating material. Insulating components 33 are formed, for example, by coating, vapor deposition, powder coating, extrusion coating, cold spraying, etc.

[0066] From the viewpoint of maximizing the performance of the heat utilization power generation module 1A, the insulating component 33 can exhibit high thermal conductivity. For example, the thermal conductivity of the insulating component 33 can be 10 W / m·K or higher. Alternatively, the insulating component 33 may include a heat-conducting component that exhibits high thermal conductivity. This heat-conducting component can also exhibit electrical conductivity. In this case, the component is completely covered by an insulator. The insulating component 33 is formed, for example, by coating, vapor deposition, powder coating, extrusion coating, cold spraying, etc.

[0067] In the heat-generating module 1A described in the second embodiment above, each heat-generating element 2 is stacked on top of each other in the stacking direction and connected in parallel. Therefore, the area of ​​the heat-generating module 1A as viewed from the stacking direction can be suppressed, and the output current of the heat-generating module 1A can be increased.

[0068] In the second embodiment, the thermal power generation module 1A includes: a collector 5A located between the insulating member 33 and one of the thermal power generation elements 2 in the stacking direction; and a collector 4A located between the insulating member 33 and the other thermal power generation element 2 in the stacking direction, wherein each collector 4A is electrically connected to the others, and each collector 5A is electrically connected to the others. In this case, short circuits between the thermal power generation elements 2 can be effectively suppressed.

[0069] Figure 6 This is a schematic cross-sectional view showing the heat utilization power generation module involved in the modified example of the second embodiment. Figure 6 The thermal power generation module 1B shown is obtained by combining the thermal power generation module 1 shown in the first embodiment and the thermal power generation module 1A shown in the second embodiment. Specifically, between a pair of collectors 4A and 5A of the thermal power generation module 1B, a plurality of thermal power generation elements 2 are stacked on top of each other in the stacking direction and connected in series. An electron conduction layer 3 is provided between adjacent thermal power generation elements 2.

[0070] If the thermal power generation element 2 and the electron conduction layer 3 sandwiched by a pair of collectors 4A and 5A are defined as an assembly 41, then the thermal power generation module 1B has multiple assemblies 41. From the viewpoint of stabilizing the electromotive force of the thermal power generation module 1B, the number of thermal power generation elements 2 and electron conduction layers 3 contained in each assembly 41 is preferably the same.

[0071] In this modified example, the thermal power generation module 1B achieves the effects of both the first and second embodiments described above. For example, by adjusting the number of thermal power generation elements 2 included in each assembly 41, the electromotive force of the thermal power generation module 1B can be set to a desired value. Alternatively, by adjusting the number of assemblies 41, the output current of the thermal power generation module 1B can be set to a desired value.

[0072] (Third Implementation)

[0073] The following describes a thermal power generation device including the thermal utilization power generation module according to the third embodiment. In the description of the third embodiment, details that are repeated in the first and second embodiments are omitted, and parts that differ from the first and second embodiments are described. That is, within the technically permissible scope, the descriptions of the first and second embodiments can be appropriately used in the third embodiment.

[0074] Figure 7 This is a schematic cross-sectional view showing an example of a thermal power generation device. Figure 7 The thermal power generation device 200 shown includes a plurality of thermal power generation modules 1 as described in the first embodiment. In the thermal power generation device 200, the plurality of thermal power generation modules 1 are connected in parallel and arranged in a direction intersecting the stacking direction (e.g., a horizontal direction). Furthermore, the plurality of thermal power generation modules 1 are integrated with each other. In this example, the pair of collectors included in each thermal power generation module 1 are shared. Specifically, the thermal power generation device 200 includes a pair of collectors 51, 52 that clamp the thermal power generation element 2 and the electron conduction layer 3 included in each thermal power generation module 1 in the stacking direction. Furthermore, the thermal power generation device 200 includes an insulating member 53 clamped by the pair of collectors 51, 52 in the stacking direction.

[0075] The collector electrode 51 functions as one of the positive and negative electrodes of the thermal power generation device 200, and is located at one end of each thermal power generation module 1 in the stacking direction. That is, the collector electrode 51 functions as one of the positive and negative electrodes for each thermal power generation module 1. The collector electrode 52 functions as the other of the positive and negative electrodes of the thermal power generation device 200, and is located at the other end of each thermal power generation module 1 in the stacking direction. That is, the collector electrode 52 functions as the other of the positive and negative electrodes for each thermal power generation module 1. The collector electrodes 51 and 52 are, for example, made of the same material as the collector electrodes 4 and 5 of the first embodiment described above. Figure 7 In this embodiment, collectors 51 and 52 each have a single plate shape, but are not limited to this. For example, collectors 51 and 52 can be a composite of electrodes disposed in each heat utilization power generation module and wiring or conductive plates that electrically connect these electrodes to each other.

[0076] The insulating component 53 is an insulator between adjacent thermal power generation modules 1 when viewed from the stacking direction. The insulating component 53 may also be an insulator between adjacent thermal power generation elements 2 in a direction intersecting the stacking direction. The insulating component 53 is, for example, made of the same material as the insulating component 33 shown in the second embodiment described above. From the viewpoint of protecting the thermal power generation device 200, the insulating component 53 surrounds the thermal power generation module 1 when viewed from the stacking direction. From the viewpoint of preventing adjacent thermal power generation modules 1 from contacting each other, the insulating component 53 preferably makes seamless contact with both the current collectors 51 and 52.

[0077] In such a thermal power generation device 200, the electromotive force of the thermal power generation device 200 can be set to a desired value by adjusting the number of thermal power generation elements 2 included in each thermal power generation module 1. Furthermore, the output current of the thermal power generation device 200 can be set to a desired value by adjusting the number of thermal power generation modules 1. Therefore, a thermal power generation device 200 that can perform as required can be provided.

[0078] The thermal power generation device 200 includes insulating components 53 disposed between adjacent thermal power generation modules 1. Therefore, short circuits between adjacent thermal power generation modules 1 can be effectively suppressed.

[0079] Figure 8 This is a schematic cross-sectional view showing other examples of thermal power generation devices. For example... Figure 8 As shown, the thermal power generation device 300 includes multiple thermal utilization power generation modules 1 arranged in series with each other and in a direction intersecting the stacking direction (e.g., horizontal direction). The multiple thermal utilization power generation modules 1 are integrated with each other. Hereinafter, for the purpose of explanation, the thermal power generation device 300 includes... Figure 8 The first thermal power generation module 1a, the second thermal power generation module 1b, and the third thermal power generation module 1c are arranged sequentially on the left side of the paper. The first thermal power generation module 1a and the second thermal power generation module 1b are adjacent to each other, and the second thermal power generation module 1b and the third thermal power generation module 1c are adjacent to each other. The stacking order of the thermal power generation elements 2 included in the first thermal power generation module 1a is the same as the stacking order of the thermal power generation elements 2 included in the third thermal power generation module 1c. On the other hand, the stacking order of the thermal power generation elements 2 included in the second thermal power generation module 1b is different from the stacking order of the first thermal power generation module 1a and the third thermal power generation module 1c.

[0080] The thermal power generation device 300 includes collectors 61 to 64. Collector 61 is a conductor that functions as one of the positive and negative electrodes in the first thermal power generation module 1a, and is located at one end of the thermal power generation device 300 in the stacking direction. Collector 62 is a conductor that functions as one of the positive and negative electrodes in the first thermal power generation module 1a and one of the positive and negative electrodes in the second thermal power generation module 1b, and is located at the other end of the thermal power generation device 300 in the stacking direction. Collector 63 is a conductor that functions as the other of the positive and negative electrodes in the second thermal power generation module 1b and one of the positive and negative electrodes in the third thermal power generation module 1c, and is located at one end of the thermal power generation device 300 in the stacking direction. Collector 64 is a conductor that functions as the other of the positive and negative electrodes in the third thermal power generation module 1c, and is located at the other end of the thermal power generation device 300 in the stacking direction. Figure 8 In this embodiment, collectors 62 and 63 each have a single plate shape, but are not limited to this. For example, collector 62 may be a composite of an electrode disposed on a first thermal power generation module 1a, an electrode disposed on a second thermal power generation module 1b, and a wiring or conductive plate that electrically connects these electrodes to each other.

[0081] The thermal power generation device 300 includes insulating components 65 and 66. Insulating component 65 is an insulator disposed between the first thermal power generation module 1a and the second thermal power generation module 1b. From the viewpoint of preventing a short circuit between the first thermal power generation module 1a and the second thermal power generation module 1b, insulating component 65 is disposed between the collector electrodes 61 and 63. Insulating component 66 is an insulator disposed between the second thermal power generation module 1b and the third thermal power generation module 1c. From the viewpoint of preventing a short circuit between the second thermal power generation module 1b and the third thermal power generation module 1c, insulating component 66 is disposed between the collector electrodes 62 and 64. Insulating components 65 and 66 are, for example, made of the same material as insulating component 33 shown in the second embodiment described above.

[0082] In such a thermal power generation device 300, since multiple thermal utilization power generation modules 1 are connected in series, the electromotive force can be further increased. Therefore, a thermal power generation device 300 that can perform according to further needs can be provided.

[0083] The thermal power generation device 300 includes insulating components 65 and 66 disposed between adjacent thermal power generation modules 1. In this case, short circuits between adjacent thermal power generation modules 1 can be effectively suppressed.

[0084] The thermal power generation module and the thermal power generation device equipped with the present disclosure are not limited to the embodiments and modifications described above, and various modifications are possible. For example, although the first embodiment described above includes multiple electron conduction layers, it is not limited thereto. In the case where the thermal power generation module includes two thermal power generation elements, the thermal power generation module may have only one electron conduction layer.

[0085] In the above embodiments and variations, the thermal power generation element has a thermoelectric conversion layer and an electron transport layer, but is not limited to these. The thermal power generation element may have layers other than the aforementioned two layers. The electron conduction layer is in contact with both the electron transport layer and the electrolyte layer, but is not limited to this. For example, any layer may be provided between the electron conduction layer and the electron transport layer. That is, any layer may be provided between the electron conduction layer and the thermal power generation element.

[0086] In the above embodiments and modifications, the thermal power generation module and the thermal power generation device can be covered by protective materials, etc. This helps to prevent damage to the thermal power generation module and the thermal power generation device. The protective material can cover the entire thermal power generation module or only a portion thereof. For example, the protective material can also cover only the side of the thermal power generation module. In this case, the protective material preferably covers this side without gaps. Similarly, the protective material can cover the entire thermal power generation device or only a portion thereof. From the viewpoint of thermal power generation efficiency, the protective material preferably exhibits high thermal conductivity. Examples of protective materials include resins containing Si (Si thermally conductive resin), ceramics, and highly thermally conductive glass. The protective material may include a thermally conductive component exhibiting high thermal conductivity. This thermally conductive component may exhibit electrical conductivity. In this case, the thermally conductive component is completely covered by an insulator.

[0087] In the second embodiment described above, the electron transport layer is not limited to semiconductor materials. For example, the electron transport layer can be a metallic material. Examples of metallic materials include metals, alloys, N-type metal oxides, N-type metal sulfides, alkali metal halides, and alkali metals. Examples of N-type metals include niobium, titanium, zinc, tin, vanadium, indium, tungsten, tantalum, zirconium, molybdenum, and manganese.

[0088] Explanation of reference numerals in the attached figures

[0089] 1, 1A, 1B… Thermal power generation module, 1a… First thermal power generation module, 1b… Second thermal power generation module, 1c… Third thermal power generation module, 2… Thermal power generation element, 3… Electron conduction layer, 4, 4A, 5, 5A, 51, 52, 61-64… Collector, 11… First thermal power generation element, 12… Thermoelectric conversion layer, 12a… Electron thermal excitation layer, 12b… Electron transport layer, 13… Electrolyte layer, 21… Second thermal power generation element, 31, 32… External electrode, 33, 53, 65, 66… Insulating component, 200, 300… Thermal power generation device.

Claims

1. A heat utilization power generation module comprising: a first heat utilization power generation element having a first thermoelectric conversion layer and a first electrolyte layer stacked one on another in a stacking direction, a second heat utilization power generation element stacked on the first heat utilization power generation element in the stacking direction and having a second thermoelectric conversion layer and a second electrolyte layer stacked one on another in the stacking direction, a first current collector located on one end side in the stacking direction, a second current collector located on the other end side in the stacking direction, and an electron conducting layer located between the first heat utilization power generation element and the second heat utilization power generation element in the stacking direction, the first heat utilization power generation element and the second heat utilization power generation element being located between the first current collector and the second current collector in the stacking direction, the first thermoelectric conversion layer having a first electron heat excitation layer and a first electron transport layer stacked one on another in the stacking direction, the first electron heat excitation layer being located between the first electron transport layer and the first electrolyte layer, the second thermoelectric conversion layer having a second electron heat excitation layer and a second electron transport layer stacked one on another in the stacking direction, the second electron heat excitation layer being located between the second electron transport layer and the second electrolyte layer, the electron conducting layer being in contact with the first electron transport layer and the second electrolyte layer, and the electron conducting layer conducting electrons moving within the heat utilization power generation element in a prescribed direction only. The first heat utilization power generation element and the second heat utilization power generation element are connected in series with each other via the electron conducting layer.

3. The heat utilization power generation module according to claim 2, wherein a work function or a band gap of the electron conducting layer is larger than a band gap of the electron transport layer. The second electrolyte layer is an organic electrolyte layer or an inorganic electrolyte layer including metal ions, The electron conducting layer includes a metal, graphite, a conductive oxide, or an electron conducting polymer material having a lower ionization tendency than the metal ions in the second electrolyte layer. The electron conducting layer includes at least one of platinum, gold, silver, and an aluminum alloy as the metal, or at least one of indium tin oxide and fluorine-doped tin oxide as the conductive oxide. wherein 6. A heat power generation device comprising a plurality of the heat utilization power generation modules according to any one of claims 1 to 5, The first heat utilization power generation element and the second heat utilization power generation element are connected in series with each other in each of the plurality of heat utilization power generation modules, The plurality of heat utilization power generation modules are arranged in parallel with each other in a direction intersecting the stacking direction and are integrated with each other. Further comprising an insulating member provided between adjacent heat utilization power generation modules.

8. A heat power generation device comprising a plurality of the heat utilization power generation modules according to any one of claims 1 to 5, The first heat utilization power generation element and the second heat utilization power generation element are connected in series with each other in each of the plurality of heat utilization power generation modules, the plurality of heat utilization power generation modules are arranged in series with each other in a direction intersecting the stacking direction, and the plurality of heat utilization power generation modules are integrated with each other. ​ 2. The thermal power generation module of claim 1, wherein, ​ ​ ​ 4. The thermal utilization power generation module according to claim 3, wherein ​ ​ 5. The thermal utilization power generation module according to claim 4, wherein, ​ ​ ​ ​ 7. The thermoelectric power generation device of claim 6, wherein, ​ ​ ​ 9. The thermoelectric power generation device of claim 8, wherein, Further provided is an insulating member disposed between adjacent heat utilization power generation modules. Further provided is an insulating member disposed between adjacent heat utilization power generation modules.

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