Depth pixel with multi-tap structure and time-of-flight sensor including depth pixel
By employing a multi-tap depth pixel design in the ToF sensor, utilizing common photoelectric gates and symmetrical structures, the problems of large sensor size and power consumption are solved, improving sensing accuracy and sensitivity, and achieving more efficient distance measurement.
CN114019527BActive Publication Date: 2026-05-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- CN202110668998.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-07-15
- Filing Date
- 2021-06-16
- Publication Date
- 2026-05-01
- Estimated Expiration
- 2041-06-16
AI Technical Summary
Technical Problem
Existing time-of-flight (ToF) sensors suffer from large size and power consumption issues when measuring distances, and their sensing accuracy and sensitivity are insufficient.
Method used
The deep pixel design employs a multi-tap structure, including a common photoelectric gate, a floating diffusion region, a demodulation transmission gate, and an overflow gate. Through the use of a symmetrical structure and a common photoelectric gate, the sensor size and power consumption are reduced, while the sensing accuracy and sensitivity are improved.
Benefits of technology
This achieves a reduction in the size and power consumption of the ToF sensor, while improving sensing accuracy and sensitivity, thus enhancing the sensor's performance.
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Abstract
A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a central region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the central region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer photocharge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric about each of a horizontal line and a vertical line passing through a center of the depth pixel and substantially perpendicular to each other. The overflow gates drain the photocharge collected by the common photogate and are symmetric about each of the horizontal line and the vertical line.
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