Light-emitting device

Abstract

The present invention discloses a light-emitting device, which includes a first substrate, a first active element, a barrier layer, a first photosensitive element, a planarization layer, and a first light-emitting diode. The first active element is located on the first substrate. The barrier layer is located on the first active element. The first photosensitive element is located on the barrier layer. The planarization layer is located on the first photosensitive element, and the first photosensitive element is located between the barrier layer and the planarization layer. The first light-emitting diode is located on the planarization layer. The first light-emitting diode includes a first electrode, a light-emitting layer, and a second electrode. The first electrode is electrically connected to the first active element. The first photosensitive element is not completely shielded by the first electrode in the normal direction of the first substrate. The light-emitting layer is located on the first electrode. The second electrode is located on the light-emitting layer.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, and more particularly to a light-emitting device having a first photosensitive element. Background Art

[0002] At present, after a display device is manufactured, a camera (such as a Charge-coupled device camera) in a factory is used to capture the image displayed by the display device, and a computer is used to analyze whether there are luminance non-uniformity (Mura) defects or other faults in the image displayed by the display device. After confirming that the display device has no Mura defects or other faults, the display device is shipped from the factory.

[0003] However, many display devices develop Mura defects after being used for a period of time. To detect these Mura defects that occur after a period of use, the display device needs to be transported back to the factory, which greatly increases the time and cost required for detecting the display device. Summary of the Invention

[0004] The present invention provides a light-emitting device that can monitor display quality through its own photosensitive element.

[0005] At least one embodiment of the present invention provides a light-emitting device. The light-emitting device includes a first substrate, a first active element, a barrier layer, a first photosensitive element, a planarization layer, and a first light-emitting diode. The first active element is located on the first substrate. The barrier layer is located on the first active element. The first photosensitive element is located on the barrier layer. The planarization layer is located on the first photosensitive element, and the first photosensitive element is located between the barrier layer and the planarization layer. The first light-emitting diode is located on the planarization layer. The first light-emitting diode includes a first electrode, a light-emitting layer, and a second electrode. The first electrode is electrically connected to the first active element. The first photosensitive element is not completely shielded by the first electrode in the normal direction of the first substrate. The light-emitting layer is located on the first electrode. The second electrode is located on the light-emitting layer. Description of the Drawings

[0006] Figure 1 is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0007] Figure 2 is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0008] Figure 3A is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0009] Figure 3B is a schematic diagram of a detection circuit of a photosensitive element according to an embodiment of the present invention;

[0010] Figure 4 It is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0011] Figure 5 It is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0012] Figure 6A It is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention;

[0013] Figure 6B It is a schematic diagram of a detection circuit of a photosensitive element according to an embodiment of the present invention.

[0014] Symbol Explanation

[0015] 1, 2, 3, 4: Display device

[0016] 100: First substrate

[0017] 110: Barrier layer

[0018] 120: Planarization layer

[0019] 130: Pixel definition layer

[0020] 200: Second substrate

[0021] 210: Reflective layer

[0022] 220: First passivation layer

[0023] 230: Second passivation layer

[0024] 240: Anti-reflection layer

[0025] BL: Buffer layer

[0026] C: Detection circuit

[0027] CH: Channel layer

[0028] D: Drain

[0029] E1: First electrode

[0030] E1s: Sidewall

[0031] E1t, TEt: Top surface

[0032] E2: Second electrode

[0033] E1O, H, O1, O2, O3: Opening

[0034] EA: Light-emitting area

[0035] EL: Light-emitting layer

[0036] FVDD, FVSS: Voltage

[0037] G Gate

[0038] GI: Gate Insulating Layer

[0039] I1: First Insulating Layer

[0040] I2: Second Insulating Layer

[0041] L1: First Light-Emitting Diode

[0042] L2: Second Light-Emitting Diode

[0043] L3: Third Light-Emitting Diode

[0044] M: Signal Line

[0045] ND: Normal Direction

[0046] PS: Spacer

[0047] S Source

[0048] SA: Sensing Region

[0049] SE1: First Sensing Electrode

[0050] SE2: Second Sensing Electrode

[0051] SM: Photosensitive Material

[0052] SR1: First Photosensitive Element

[0053] SR2: Second Photosensitive Element

[0054] SR3: Third Photosensitive Element

[0055] Sread, Sreset, Vout: Signals

[0056] T1: First Active Element

[0057] TE: Transparent Electrode

[0058] TH1: First Through-Hole

[0059] TH2: Second Through-Hole

[0060] t1, t2: Thickness

[0061] X1, X2, X3: Switching Elements

[0062] Y1, Y2: Light Rays Detailed Implementation Manner

[0063] Figure 1 is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention.

[0064] Please refer to Figure 1 The light-emitting device 1 includes a first substrate 100, a first active element T1, a barrier layer 110, a first photosensitive element SR1, a planarization layer 120, and a first light-emitting diode L1. In this embodiment, the light-emitting device 1 further includes a buffer layer BL, a spacer PS, a second substrate 200, a reflective layer 210, a first passivation layer 220, a second passivation layer 230, and an antireflection layer 240.

[0065] The material of the first substrate 100 can be glass, quartz, an organic polymer, or an opaque / reflective material (e.g., a conductive material, metal, wafer, ceramic, or other applicable material) or other applicable materials. When using a conductive material or metal, an insulating layer (not shown) is covered on the first substrate 100 to avoid short-circuit problems. In some embodiments, the first substrate 100 is a flexible substrate, and the material of the first substrate 100 is, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyester (PES), polymethylmethacrylate (PMMA), polycarbonate (PC), polyimide (PI), or a metal foil or other flexible materials.

[0066] The buffer layer BL is located on the first substrate 100. The buffer layer BL is a single-layer or multi-layer structure. In some embodiments, the buffer layer BL is silicon oxide, silicon nitride, or a stacked layer of silicon oxide and silicon nitride, but the present invention is not limited thereto.

[0067] The first active element T1 is located on the first substrate 100. The first active element T1 includes a channel layer CH, a gate G, a source S, and a drain D. The gate G overlaps the channel layer CH, and a gate insulating layer GI is sandwiched between the gate G and the channel layer CH. The first insulating layer I1 covers the gate G. The second insulating layer I2 covers the first insulating layer I1. The source S and the drain D are located on the second insulating layer I2 and are electrically connected to the channel layer CH through openings O1 and O2, respectively. The openings O1 and O2 penetrate the gate insulating layer GI, the first insulating layer I1, and the second insulating layer I2. In this embodiment, the signal line M is located between the second insulating layer I2 and the first insulating layer I1 and overlaps the gate G.

[0068] Although in this embodiment, the first active element T1 is exemplified by a top-gate thin-film transistor, the present invention is not limited thereto. In other embodiments, the first active element T1 may also be a bottom-gate type or other types of thin-film transistors.

[0069] The barrier layer 110 is located on the first active element T1. The first photosensitive element SR1 is located on the barrier layer 110. In this embodiment, the first photosensitive element SR1 includes a first sensing electrode SE1, a second sensing electrode SE2, and a photosensitive material SM.

[0070] The first sensing electrode SE1 and the second sensing electrode SE2 are located on the barrier layer 110. The first sensing electrode SE1 and the second sensing electrode SE2 are separated from each other. In some embodiments, the first sensing electrode SE1 and the second sensing electrode SE2 belong to the same conductive layer and are formed by the same patterning process, but the present invention is not limited thereto. In this embodiment, one first photosensitive element SR1 includes two second sensing electrodes SE2 and one first sensing electrode SE1, wherein the first sensing electrode SE1 is located between the two second sensing electrodes SE2. In some embodiments, the distance between the first sensing electrode SE1 and the second sensing electrode SE2 is 1 micrometer to 200 micrometers.

[0071] The photosensitive material SM is located between the first sensing electrode SE1 and the second sensing electrode SE2. In some embodiments, the material of the photosensitive material SM includes, for example, silicon-rich oxide, silicon-rich oxynitride, silicon-rich carbide, silicon-rich carbon oxide, hydrogenated silicon-rich oxide, hydrogenated silicon-rich oxynitride, hydrogenated silicon-rich carbide, or a combination thereof, but the present invention is not limited thereto. In other embodiments, the photosensitive material SM includes a stacked layer of a P-type semiconductor, an intrinsic semiconductor, and an N-type semiconductor.

[0072] The planarization layer 120 is located on the first photosensitive element SR1, and the first photosensitive element SR1 is located between the barrier layer 110 and the planarization layer 120. In this embodiment, the photosensitive material SM is located between the first sensing electrode SE1 and the planarization layer 120 and between the second sensing electrode SE2 and the planarization layer 120.

[0073] The first light-emitting diode L1 is located on the planarization layer 120. The first light-emitting diode L1 includes a first electrode E1, a light-emitting layer EL, and a second electrode E2. In this embodiment, the first light-emitting diode L1 further includes a transparent electrode TE.

[0074] The transparent electrode TE is located on the flat layer 120. The thickness t1 of the transparent electrode TE is from 1 nanometer to 500 nanometers. The material of the transparent electrode TE includes a conductive oxide, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other conductive materials. The transparent electrode TE is electrically connected to the drain D of the first active element T1 through the opening O3. The opening O3 penetrates, for example, the barrier layer 110 and the flat layer 120. The transparent electrode TE at least partially overlaps the first photosensitive element SR1 in the normal direction ND of the first substrate 100.

[0075] The first electrode E1 is formed on the transparent electrode TE. The first electrode E1 is electrically connected to the first active element T1 through the transparent electrode TE. The thickness t2 of the first electrode E1 is from 1 nanometer to 500 nanometers. In this embodiment, the first electrode E1 includes an opaque material, such as a metal or other conductive materials. The first electrode E1 has, for example, a higher reflectivity than the transparent electrode TE, thereby improving the light-emitting efficiency of the display device 1.

[0076] The first photosensitive element SR is not completely shielded by the first electrode E1 in the normal direction ND of the first substrate 100. For example, the first electrode E1 has an opening E1O overlapping the transparent electrode TE, and the opening E1O overlaps the first photosensitive element SR1 in the normal direction ND of the first substrate 100, so that the first photosensitive element SR1 is not completely shielded by the first electrode E1. The aforementioned "the first photosensitive element SR1 is not completely shielded by the first electrode E1 in the normal direction ND of the first substrate 100" can be the case where "the entire first photosensitive element SR1 is not shielded by the first electrode E1 in the normal direction ND of the first substrate 100" or the case where "a part of the first photosensitive element SR1 is not shielded by the first electrode E1 in the normal direction ND of the first substrate 100".

[0077] The pixel defining layer 130 is located on the flat layer 120 and has an opening H overlapping the first electrode E1. The light-emitting layer EL is filled into the opening H of the pixel defining layer 130, and the light-emitting layer EL is located on the first electrode E1. In this embodiment, the light-emitting layer EL extends from the top surface E1t of the first electrode E1 along the side wall E1s of the opening E1O of the first electrode E1 to the top surface TEt of the transparent electrode TE. In other words, the light-emitting layer EL fills the opening E1O of the first electrode E1.

[0078] The second electrode E2 is located on the light-emitting layer EL. In some embodiments, the spacer PS is formed on the pixel defining layer 130, and the second electrode E2 is formed on the light-emitting layer EL, the spacer PS, and the pixel defining layer 130.

[0079] In some embodiments, the first light-emitting diode L1 is an organic light-emitting diode, and the light-emitting layer EL includes an organic material. In some embodiments, the light-emitting layer EL includes a combination of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer, but the present invention is not limited thereto.

[0080] A portion of the light-emitting layer EL that contacts the top surface TEt of the transparent electrode TE is defined as a sensing region SA, and a portion of the light-emitting layer EL that contacts the top surface E1t of the first electrode E1 is defined as a light-emitting region EA. The sensing region SA overlaps the first photosensing element SR1 in the normal direction ND of the first substrate 100. In some embodiments, the light-emitting region EA surrounds the sensing region SA, but the present invention is not limited thereto. In some embodiments, the ratio of the area of the light-emitting region EA to the area of the sensing region SA is 1 to 2000.

[0081] In this embodiment, both the sensing region SA and the light-emitting region EA emit light. In this embodiment, the first light-emitting diode L1 emits light Y1 upward (toward the second substrate 200) and light Y2 downward (toward the first substrate 100). In some embodiments, the first electrode E1 includes a reflective material, thereby increasing the light Y1 emitted upward from the light-emitting region EA. The transparent electrode TE includes a transparent material, so in addition to emitting the upward light Y1, the sensing region SA also emits the downward light Y2.

[0082] The first photosensing element SR1 receives the light Y2, thereby detecting whether the first light-emitting diode L1 has color deviation or other problems. In other words, the first photosensing element SR1 is suitable for detecting defects of the first light-emitting diode L1. Therefore, it is not necessary to transport the display device 1 back to the factory to detect the display quality of the display device 1.

[0083] In the normal direction ND of the first substrate 100, the second substrate 200 overlaps the first substrate 100, and the first light-emitting diode L1 and the first photosensing element SR1 are located between the first substrate 100 and the second substrate 200.

[0084] The material of the second substrate 200 may be glass, quartz, an organic polymer, or other applicable materials. In some embodiments, the second substrate 200 is a flexible substrate, and the material of the second substrate 200 is, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyester (PES), polymethylmethacrylate (PMMA), polycarbonate (PC), polyimide (PI), or other flexible materials.

[0085] The reflective layer 210 is located on the second substrate 200. In some embodiments, the material of the reflective layer 210 includes a metal or other conductive material, and the reflective layer 210 is applicable to touch electrodes. The reflective layer 210 does not overlap with the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100. In the present embodiment, the reflective layer 210 has a first through hole TH1, and the first through hole TH1 overlaps with the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100, so that the light Y1 emitted upward by the first light-emitting diode L1 can pass through the first through hole TH1.

[0086] The first passivation layer 220 and the second passivation layer 230 are located on the reflective layer 210. The anti-reflection layer 240 is located on the first passivation layer 220 and the second passivation layer 230. In some embodiments, the material of the anti-reflection layer 240 includes black resin, chromium, chromium oxide, molybdenum oxide, or other materials with a low reflectivity. The anti-reflection layer 240 can prevent the light Y1 emitted upward by the first light-emitting diode L1 from being reflected to the positions of other light-emitting diodes, thereby avoiding interference between the lights emitted by different light-emitting diodes.

[0087] The anti-reflection layer 240 does not overlap with the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100. In the present embodiment, the anti-reflection layer 240 has a second through hole TH2, and the second through hole TH2 overlaps with the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100, so that the light Y1 emitted upward by the first light-emitting diode L1 can pass through the second through hole TH2. In some embodiments, the second through hole TH2 extends into the second passivation layer 230, thereby improving the transmittance.

[0088] Based on the above, the first photosensitive element SR1 can detect the light L2 emitted by the first light-emitting diode L1 and detect whether the first light-emitting diode L1 has a defect. Therefore, the time required to detect the light-emitting device 1 can be saved.

[0089] Figure 2 is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention. It must be noted here that Figure 2 the embodiments of Figure 1 adopt the component numbers and partial contents of the embodiments of

[0090] wherein the same or approximate component numbers are used to represent the same or approximate components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, which will not be elaborated here. Figure 2Illustrate the transparent electrodes TE, the first electrodes E1, and the light-emitting layers EL of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 respectively, and omit other components in the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3. The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are respectively electrically connected to a corresponding active element (not shown) for example. For the method of electrically connecting the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 to the active element, please refer to Figure 1 the first light-emitting diode L1 and the first active element T1, which will not be elaborated here.

[0091] Please refer to Figure 2 , the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 are located on the barrier layer 110. The planar layer 120 is located on the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3. The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are located on the planar layer 120.

[0092] The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 respectively overlap the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 in the normal direction of the first substrate ( Figure 2 the direction perpendicular to the paper surface in the figure). In this embodiment, the first electrodes E1 of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 each have an opening E1O, and the openings E1O of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 respectively overlap the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 in the normal direction of the first substrate.

[0093] The first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 are electrically connected to a sensing circuit (not shown).

[0094] In this embodiment, the light-emitting layers EL of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting materials of different colors respectively. In other words, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting diodes of different colors respectively, but the present invention is not limited thereto. In other embodiments, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting diodes of the same color.

[0095] In this embodiment, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are located in the same pixel. For example, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are the blue light-emitting diode, the green light-emitting diode, and the red light-emitting diode of the same pixel, respectively. Based on this, the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 can be used to detect whether the light-emitting diodes of different colors have color deviation or other problems.

[0096] Based on the above, the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 are suitable for detecting the defects of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3. Therefore, it is not necessary to transport the display device 2 back to the factory to detect the display quality of the display device 2.

[0097] Figure 3A is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention. Figure 3B is a schematic diagram of a detection circuit of a photosensitive element according to an embodiment of the present invention.

[0098] It must be noted here that Figure 3A and Figure 3B of the embodiment follow Figure 2 of the embodiment of the component numbers and some content, where the same or similar numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments, which will not be elaborated here.

[0099] Please refer to Figure 3A and Figure 3B In this embodiment, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 overlap the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 respectively in the normal direction of the first substrate ( Figure 3A the direction perpendicular to the paper surface in

[0100] In this embodiment, the detection circuit C includes three switching elements X1, X2, and X3.

[0101] The source of the switching element X1 is electrically connected to the operating voltage FVDD. A reset signal Sreset is applied to the gate of the switching element X1 to control the open (OFF) or closed (ON) state of the switching element X1. The drain of the switching element X1 is electrically connected to the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 connected in parallel.

[0102] The source of the switching element X2 is electrically connected to the operating voltage FVDD. The gate of the switching element X2 is electrically connected to the drain of the switching element X1.

[0103] The source of the switching element X3 is electrically connected to the drain of the switching element X2. A read signal Sread is applied to the gate of the switching element X3 to control the open (OFF) or closed (ON) state of the switching element X3. The signal Vout output from the drain of the read switch element X3 is read to obtain the detection results of the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3.

[0104] In this embodiment, the first photosensitive element SR1, the second photosensitive element SR2, and the third photosensitive element SR3 are electrically connected to the same detection circuit C, thereby saving the space of the circuit layout. In some embodiments, when detecting a light-emitting device, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 of different colors are turned on in turn to respectively detect the defects of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 of different colors, but the present invention is not limited thereto. In other embodiments, when detecting a light-emitting device, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are turned on simultaneously to simultaneously detect the defects of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3.

[0105] Figure 4 is a cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention.

[0106] It must be noted here that Figure 4 the embodiment of Figure 1 adopts the component numbers and partial contents of the embodiment of

[0107] Figure 4 The main difference between the light-emitting device 3 of Figure 1 and the light-emitting device 1 of Figure 4In the first light-emitting diode L1, the sensing region SA is located on the side of the light-emitting region EA.

[0108] Please refer to Figure 4 , the light-emitting layer EL extends from the top surface E1t of the first electrode E1 along the side wall E1s of the first electrode E1 to the top surface TEt of the transparent electrode TE. The portion of the light-emitting layer EL in contact with the top surface TEt of the transparent electrode TE is defined as the sensing region SA, and the portion of the light-emitting layer EL in contact with the top surface E1t of the first electrode E1 is defined as the light-emitting region EA. The sensing region SA overlaps the first photosensing element SR1 in the normal direction ND of the first substrate 110.

[0109] In this embodiment, the sensing region SA is located on one side of the light-emitting region EA. In other words, in this embodiment, the light-emitting region EA does not surround the sensing region SA.

[0110] In this embodiment, the reflective layer 210 overlaps the sensing region SA in the normal direction ND of the first substrate 100. The anti-reflection layer 240 does not overlap the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100. In this embodiment, the reflective layer 210 has a first through hole TH1. The first through hole TH1 overlaps the light-emitting region EA in the normal direction ND of the first substrate 100. The anti-reflection layer 240 has a second through hole TH2, and the second through hole TH2 overlaps the light-emitting region EA and the sensing region SA in the normal direction ND of the first substrate 100.

[0111] In this embodiment, both the sensing region SA and the light-emitting region EA emit light. In this embodiment, the first light-emitting diode L1 emits light Y1 upward (toward the second substrate 200) and light Y2 downward (toward the first substrate 100). In some embodiments, the first electrode E1 includes a reflective material, thereby increasing the light Y1 emitted upward by the light-emitting region EA. The transparent electrode TE includes a transparent material, so in addition to emitting the upward light Y1, the sensing region SA also emits the downward light Y2.

[0112] In this embodiment, the light Y1 emitted upward by the sensing region SA is reflected by the reflective layer 210. The reflected light Y1 can pass through the first light-emitting diode L1 and be received by the first photosensing element SR1, thereby increasing the optical signal received by the first photosensing element SR1. In addition, the reflective layer 210 can also prevent the light outside the display device 3 from irradiating the first photosensing element SR1, reducing the interference of external light on the first photosensing element SR1. Additionally, the overlapping of the reflective layer 210 with the sensing region SA can prevent the emitted light Y1 from leaving the display device 3 from the second substrate 200, thereby avoiding the inconsistent brightness of the light Y1 emitted by the sensing region SA and the light-emitting region EA and affecting the display quality.

[0113] The first photosensitive element SR1 receives the light Y2 and the reflected light Y1, thereby detecting whether color deviation or other problems occur in the first light-emitting diode L1. In other words, the first photosensitive element SR1 is suitable for detecting defects of the first light-emitting diode L1. Therefore, it is not necessary to transport the display device 3 back to the factory to detect the display quality of the display device 3.

[0114] Figure 5 is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention.

[0115] It must be noted here that Figure 5 the embodiments of Figure 4 adopt the component numbers and partial contents of the embodiments of

[0116] wherein the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted part, reference can be made to the foregoing embodiments, which will not be elaborated here. Figure 5 In the present embodiment, the light-emitting device 4 includes a first light-emitting diode L1, a second light-emitting diode L2, and a third light-emitting diode L3. For the convenience of description, Figure 4 the transparent electrodes TE, the first electrodes E1, and the light-emitting layers EL of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are respectively illustrated, and other components in the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are omitted. The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are respectively electrically connected to a corresponding active element (not shown). For the method of electrically connecting the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 to the active element, reference can be made to

[0117] Please refer to Figure 5 wherein the first photosensitive element SR1 is located on the barrier layer 110. The flat layer 120 is located on the first photosensitive element SR1. The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are located on the flat layer 120.

[0118] The first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 all partially overlap the first photosensitive element SR1 in the normal direction of the first substrate ( Figure 5 the direction perpendicular to the paper surface in

[0119] ). In the present embodiment, the first electrodes E1 of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 each have an opening E1O at a position close to the first photosensitive element SR1. The first photosensitive element SR1 is electrically connected to a sensing circuit (not shown).

[0120] In this embodiment, the light-emitting layers EL of the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting materials of different colors. In other words, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting diodes of different colors, but the present invention is not limited thereto. In other embodiments, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are organic light-emitting diodes of the same color.

[0121] In this embodiment, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are located in the same pixel. For example, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are the blue light-emitting diode, the green light-emitting diode, and the red light-emitting diode of the same pixel, respectively. Based on this, the first photosensitive element SR1 can be used to detect whether color deviation or other problems occur in the light-emitting diodes of different colors.

[0122] Based on the above, the first photosensitive element SR1 is suitable for detecting defects in the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3. Therefore, it is not necessary to transport the display device 4 back to the factory to detect the display quality of the display device 4.

[0123] Figure 6A is a top view schematic diagram of a light-emitting device according to an embodiment of the present invention. Figure 6B is a schematic diagram of a detection circuit of a photosensitive element according to an embodiment of the present invention.

[0124] It must be noted here that Figure 6A and Figure 6B The embodiments of Figure 5 adopt the component numbers and partial contents of the embodiments of Figure 5 where the same or similar numbers are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference can be made to the foregoing embodiments, which will not be elaborated here.

[0125] Please refer to Figure 6A and Figure 6B In this embodiment, the first light-emitting diode L1, the second light-emitting diode L2, and the third light-emitting diode L3 are in the normal direction of the first substrate ( Figure 6AIn some embodiments, the first sensing electrode of the first photosensitive element SR1 is electrically connected to the detection circuit C, and the second sensing electrode of the first photosensitive element SR1 is electrically connected to the voltage FVSS. In other embodiments, the second sensing electrode of the first photosensitive element SR1 is electrically connected to the detection circuit C, and the first sensing electrode of the first photosensitive element SR1 is electrically connected to the voltage FVSS.

[0126] In this embodiment, the detection circuit C includes three switch elements X1, X2, and X3. The description of the detection circuit C can be referred to Figure 3B The description is not repeated here.

[0127] In the present embodiment, the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3 share a first photosensitive element SR1 and a detection circuit C, thereby saving space for circuit layout. In some embodiments, when detecting the light emitting device, the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3 of different colors are turned on in turn to respectively detect the defects of the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3 of different colors, but the present invention is not limited thereto. In other embodiments, when detecting the light emitting device, the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3 are turned on at the same time to simultaneously detect the defects of the first light emitting diode L1, the second light emitting diode L2 and the third light emitting diode L3.

Claims

1. A light-emitting device, comprising: A first substrate; A first active element located on the first substrate; A barrier layer located on the first active element; A first photosensitive element located on the barrier layer; A planarization layer located on the first photosensitive element, and the first photosensitive element is located between the barrier layer and the planarization layer; A first light-emitting diode located on the planarization layer, and comprising: A first electrode electrically connected to the first active element, wherein the first photosensitive element is not completely shielded by the first electrode in the normal direction of the first substrate; A light-emitting layer located on the first electrode; and A second electrode located on the light-emitting layer, wherein the first light-emitting diode further comprises: A transparent electrode located on the planarization layer and at least partially overlapping the first photosensitive element in the normal direction of the first substrate, wherein the first electrode is formed on the transparent electrode and the first electrode is electrically connected to the first active element through the transparent electrode, wherein the first electrode has an opening overlapping the transparent electrode, the opening is a through hole with a closed annular sidewall, the opening is completely shielded by the transparent electrode and the first photosensitive element, wherein the light-emitting layer extends from the top surface of the first electrode along the closed annular sidewall of the opening of the first electrode to the top surface of the transparent electrode, the light-emitting layer fills the opening of the first electrode and contacts the closed annular sidewall of the opening, and the portion of the light-emitting layer contacting the top surface of the transparent electrode is defined as a sensing region, and the portion of the light-emitting layer contacting the top surface of the first electrode is defined as a light-emitting region, wherein the sensing region overlaps the first photosensitive element in the normal direction of the first substrate, wherein the light-emitting region surrounds the sensing region, and the ratio of the area of the light-emitting region to the area of the sensing region is 1 to 2000; A second substrate overlapping the first substrate in the normal direction of the first substrate, and the first light-emitting diode is located between the first substrate and the second substrate; A reflective layer located on the second substrate and not overlapping the light-emitting region and the sensing region in the normal direction of the first substrate, the material of the reflective layer includes metal, the reflective layer is a touch electrode, wherein the reflective layer has a first through hole exposing the second substrate, the first through hole overlaps the light-emitting region and the sensing region in the normal direction of the first substrate, so that the light emitted upward by the first light-emitting diode can pass through the first through hole; A first passivation layer located on the reflective layer and covering the reflective layer, the first through hole and the second substrate; An antireflection layer located on the first passivation layer, a part of the first passivation layer is located between the reflective layer and the antireflection layer, wherein the antireflection layer does not overlap the light-emitting region and the sensing region in the normal direction of the first substrate, the antireflection layer has a second through hole, the second through hole overlaps the light-emitting region and the sensing region in the normal direction of the first substrate, and the material of the antireflection layer includes black resin, chromium, chromium oxide or molybdenum oxide; A second photosensitive element and a third photosensitive element located on the barrier layer, wherein the second photosensitive element, the third photosensitive element and the first photosensitive element are connected in parallel; A second light-emitting diode and a third light-emitting diode are located on the flat layer. In the normal direction of the first substrate, the second photosensitive element overlaps with the second light-emitting diode, and the third photosensitive element overlaps with the third light-emitting diode; and A detection circuit is located on the first substrate. The first photosensitive element, the second photosensitive element, and the third photosensitive element are electrically connected to the detection circuit. The detection circuit includes a first switching element, a second switching element, and a third switching element. The source of the first switching element is electrically connected to the operating voltage FVDD. A reset signal Sreset is applied to the gate of the first switching element to control the open (OFF) or closed (ON) state of the first switching element. The drain of the first switching element is electrically connected to the parallel-connected first photosensitive element, the second photosensitive element, and the third photosensitive element. The source of the second switching element is electrically connected to the operating voltage FVDD. The gate of the second switching element is electrically connected to the drain of the first switching element. The source of the third switching element is electrically connected to the drain of the second switching element. A read signal Sread is applied to the gate of the third switching element to control the open (OFF) or closed (ON) state of the third switching element. The signal Vout output from the drain of the third switching element is read to obtain the detection results of the first photosensitive element, the second photosensitive element, and the third photosensitive element.

2. The light-emitting device according to claim 1, wherein the thickness of the first electrode is 1 nanometer to 500 nanometers, and the thickness of the transparent electrode is 1 nanometer to 500 nanometers.

3. The light-emitting device according to claim 1, wherein the material of the first electrode includes a metal, and the material of the transparent electrode includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or indium gallium zinc oxide.

4. The light-emitting device according to claim 1, wherein the first photosensitive element is adapted to detect defects of the first light-emitting diode.

5. The light-emitting device according to claim 1, wherein the first photosensitive element includes: A first sensing electrode and a second sensing electrode, the first sensing electrode and the second sensing electrode are separated from each other, and the first sensing electrode and the second sensing electrode are located on the barrier layer; and A photosensitive material is located between the first sensing electrode and the second sensing electrode, wherein the photosensitive material is located between the first sensing electrode and the flat layer and between the second sensing electrode and the flat layer.

6. The light-emitting device according to claim 1, wherein the first light-emitting diode emits light toward the first substrate and the first light-emitting diode emits light toward the second substrate.

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