Display device

Abstract

A display device is provided. The display device includes a first substrate having a display area, a light emitting element on the first substrate, and an encapsulating layer on the light emitting element. The encapsulating layer includes a first inorganic layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer. The first inorganic layer includes a first buffer layer on the light emitting element, a first barrier layer on the first buffer layer, a first porous layer on the first barrier layer, a second barrier layer on the first porous layer, and a second buffer layer on the second barrier layer. A refractive index of the first buffer layer, a refractive index of the first barrier layer, and a refractive index of the first porous layer are different from each other, and the refractive index of the first porous layer is smaller than the refractive index of the first buffer layer and the refractive index of the first barrier layer.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0105185, filed on August 21, 2020, with the Korean Intellectual Property Office (KIPO), the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices. Background Technology

[0004] With the development of multimedia technology, display devices are becoming increasingly important. Accordingly, various display devices are currently under development, such as liquid crystal displays (LCDs) and organic light-emitting diode displays (OLEDs).

[0005] In a display device, a self-emissive display device includes a self-emissive element (e.g., an organic light-emitting element). The self-emissive element may include two opposing electrodes and an emitting layer between them. For an organic light-emitting element as a self-emissive element, electrons and holes supplied from the two opposing electrodes recombine in the emitting layer to generate excitons, which relax from an excited state to a ground state and thus emit light.

[0006] This type of self-emissive display device does not require a separate light source such as a backlight unit, and therefore consumes less power and can be made thinner and lighter, while exhibiting high-quality characteristics such as wide viewing angles, high brightness and contrast, and fast response times. Accordingly, organic light-emitting display devices are attracting attention as the next generation of display devices. Summary of the Invention

[0007] This disclosure relates to display devices that can store data more reliably.

[0008] These and other aspects, embodiments, and advantages of this disclosure will immediately become apparent to those skilled in the art upon reading the following detailed description and claims.

[0009] According to one or more embodiments of this disclosure, a display device includes: a first substrate having a display area and a non-display area; a plurality of light-emitting elements located on the first substrate, the plurality of light-emitting elements being located in the display area; and an encapsulation layer located above the plurality of light-emitting elements. The encapsulation layer includes: a first inorganic layer; an organic layer located on the first inorganic layer; and a second inorganic layer located on the organic layer. The first inorganic layer includes: a first buffer layer located on the plurality of light-emitting elements; a first barrier layer located on the first buffer layer; a first porous layer located on the first barrier layer; a second barrier layer located on the first porous layer; and a second buffer layer located on the second barrier layer. The refractive indices of the first buffer layer, the first barrier layer, and the first porous layer are different from each other, and the refractive index of the first porous layer is less than the refractive index of the first buffer layer and the refractive index of the first barrier layer.

[0010] The first barrier layer may be located between the first buffer layer and the first porous layer. The second barrier layer may be located between the first porous layer and the second buffer layer. The second buffer layer may be located between the second barrier layer and the organic layer.

[0011] The refractive index of the first buffer layer can be less than that of the first barrier layer.

[0012] The refractive index of the first porous layer can be in the range of 1.1 to 1.45.

[0013] The refractive index of the first buffer layer can be in the range of 1.3 to 1.75.

[0014] The refractive index of the first barrier layer can be in the range of 1.45 to 1.85.

[0015] The refractive index of the second buffer layer can be equal to that of the first buffer layer.

[0016] The second buffer layer can be located directly below the organic layer.

[0017] The surface roughness of the second buffer layer can be in the range of 5nm to 100nm.

[0018] The surface energy of the second buffer layer can be in the range of 40 mN / m to 80 mN / m.

[0019] The second inorganic layer may include a third buffer layer located on the organic layer and a third barrier layer located on the third buffer layer.

[0020] The refractive index of the third buffer layer can be less than that of the third barrier layer.

[0021] The second inorganic layer may further include a fourth buffer layer located on the third barrier layer. The third buffer layer may be located between the organic layer and the third barrier layer. The third barrier layer may be located between the third buffer layer and the fourth buffer layer.

[0022] The display device may further include: a second substrate located above the encapsulation layer; a plurality of color filters located on the surface of the second substrate facing the first substrate, the plurality of color filters overlapping with a plurality of light-emitting elements respectively; a plurality of wavelength conversion patterns located on the plurality of color filters respectively; and a filler located between the first substrate and the second substrate.

[0023] The display device may further include a plurality of thin-film transistors located between a first substrate of the display area and a plurality of light-emitting elements, the plurality of thin-film transistors being electrically connected to the plurality of light-emitting elements respectively. Each of the plurality of thin-film transistors may include: a semiconductor layer located on the first substrate; a gate electrode located on the semiconductor layer; a source electrode connected to the semiconductor layer; and a drain electrode connected to the semiconductor layer. The semiconductor layer may include an oxide semiconductor.

[0024] Each of the multiple light-emitting elements may include: an anode electrode located above the source electrode and the drain electrode; a cathode electrode facing the anode electrode; and multiple emitting layers located between the anode electrode and the cathode electrode. The multiple emitting layers form a series structure in which the multiple emitting layers overlap each other.

[0025] The display device may further include a light-blocking layer located between the first substrate and the semiconductor layer, the light-blocking layer overlapping the semiconductor layer. The light-blocking layer may be electrically connected to a source electrode or a drain electrode.

[0026] The fourth buffer layer can be in direct contact with the filler. The surface roughness of the fourth buffer layer can be in the range of 5 nm to 100 nm. The surface energy of the fourth buffer layer can be in the range of 40 mN / m to 80 mN / m.

[0027] The second inorganic layer may further include: a fourth barrier layer located between the third barrier layer and the fourth buffer layer; and a second porous layer located between the fourth barrier layer and the third barrier layer. The refractive index of the second porous layer may be lower than the refractive indices of the third buffer layer, the third barrier layer, the fourth barrier layer, and the fourth buffer layer of the second inorganic layer.

[0028] According to one or more embodiments of this disclosure, a display device includes: a first substrate having a display area and a non-display area; a plurality of light-emitting elements located on the first substrate, the plurality of light-emitting elements being located in the display area; and an encapsulation layer located above the plurality of light-emitting elements. The encapsulation layer includes: a first inorganic layer; an organic layer located on the first inorganic layer; and a second inorganic layer located on the organic layer. The second inorganic layer includes: a first buffer layer located on the organic layer; a first barrier layer located on the first buffer layer; a first porous layer located on the first barrier layer; a second barrier layer located on the first porous layer; and a second buffer layer located on the second barrier layer. The refractive indices of the first buffer layer, the first barrier layer, and the first porous layer are different from each other. The refractive index of the first porous layer is less than the refractive index of the first buffer layer and the refractive index of the first barrier layer.

[0029] The first inorganic layer may include: a third buffer layer located on the light-emitting element; and a third blocking layer located on the third buffer layer.

[0030] The display device further includes a filler located above the encapsulation layer. A first barrier layer may be located between a first buffer layer and a first porous layer. A second barrier layer may be located between the first porous layer and the second buffer layer. A second buffer layer may be located between the second barrier layer and the filler.

[0031] The refractive index of the first buffer layer can be less than that of the first barrier layer. The refractive index of the first porous layer can be in the range of 1.1 to 1.45. The refractive index of the first buffer layer can be in the range of 1.3 to 1.75. The refractive index of the first barrier layer can be in the range of 1.45 to 1.85.

[0032] Additional details of one or more embodiments of the subject matter described in this specification are set forth in the following drawings and description.

[0033] According to embodiments of this disclosure, display devices can be stored more reliably.

[0034] It should be noted that the effects of this disclosure are not limited to those described above, and other effects of this disclosure will be apparent to those skilled in the art from the following description. Attached Figure Description

[0035] The above and other aspects and features of this disclosure will become more apparent from the detailed description of embodiments thereof with reference to the accompanying drawings, in which:

[0036] Figure 1 This is a cross-sectional view showing the stacked structure of a display device according to an embodiment of the present disclosure;

[0037] Figure 2 This is a plan view of a display device according to an embodiment of the present disclosure;

[0038] Figure 3 yes Figure 2 A magnified plan view of part Q1, more specifically in Figure 2 A plan view of the display substrate included in the display device;

[0039] Figure 4 yes Figure 2 A magnified plan view of part Q1, more specifically in Figure 2 A plan view of the color conversion substrate included in the display device;

[0040] Figure 5 yes Figure 3 A plan view of a variant of the example shown;

[0041] Figure 6 It is shown Figure 4 A plan view of a variant of the example shown;

[0042] Figure 7 yes Figure 2 A magnified plan view of part of Q3;

[0043] Figure 8 yes Figure 2 A partial enlarged plan view of Q5;

[0044] Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of a display device according to an embodiment of the present disclosure, taken by line X1-X1';

[0045] Figure 10 yes Figure 9 Enlarged cross-sectional view of part of Q7;

[0046] Figure 11 It is shown Figure 10 A cross-sectional view of a variant of the structure shown;

[0047] Figure 12 It is along Figure 7 A cross-sectional view of a display device according to an embodiment of the present disclosure, taken by line X3-X3';

[0048] Figure 13 This is a plan view schematically illustrating the layout of the third color filter and color pattern in the color conversion substrate of a display device according to an embodiment of the present disclosure;

[0049] Figure 14 This is a plan view showing the layout of the light-blocking member in the color conversion substrate of a display device according to an embodiment of the present disclosure;

[0050] Figure 15This is a plan view schematically illustrating the layout of a first color filter in a color conversion substrate of a display device according to an embodiment of the present disclosure;

[0051] Figure 16 This is a plan view showing the layout of a second color filter in a color conversion substrate of a display device according to an embodiment of the present disclosure;

[0052] Figure 17 This is a plan view showing the layout of the embankment pattern, the first wavelength conversion pattern, the second wavelength conversion pattern, and the light-transmitting pattern in the color conversion substrate of a display device according to an embodiment of the present disclosure;

[0053] Figure 18 yes Figure 9 Enlarged cross-sectional view of region Q9;

[0054] Figure 19 yes Figure 18 Enlarged cross-sectional view of region Q11;

[0055] Figure 20 yes Figure 18 Enlarged cross-sectional view of region Q13;

[0056] Figure 21 It shows the basis Figure 20 A cross-sectional view of a variant of the encapsulation layer in an embodiment;

[0057] Figure 22 and Figure 23 It shows the basis Figure 18 A cross-sectional view of a variant of the encapsulation layer in an embodiment; and

[0058] Figure 24 It shows the basis Figure 18 A cross-sectional view of another variation of the encapsulation layer in the embodiment. Detailed Implementation

[0059] The specific structural and functional descriptions of the embodiments of this disclosure disclosed herein are for illustrative purposes only. This disclosure may be implemented in many different forms without departing from its spirit and salient features. Therefore, the embodiments of this disclosure are provided for illustrative purposes only and should not be construed as limiting the scope of this disclosure.

[0060] It will be understood that when an element is referred to as being associated with another element (such as being “coupled” or “connected” to another element), that element may be directly coupled to or connected to that other element, or an intermediary element may exist between them. Conversely, it should be understood that when an element is referred to as being associated with another element (such as being “directly coupled” or “directly connected” to another element), there is no intermediary element. Other expressions explaining the relationship between elements (such as “between,” “directly between,” “adjacent to,” or “directly adjacent to”) should be interpreted in the same way.

[0061] Throughout the specification, the same reference numerals will denote the same or similar parts.

[0062] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or part from another. Therefore, without departing from the teachings herein, “first element,” “first component,” “first region,” “first layer,” or “first part” discussed below may be referred to as a second element, second component, second region, second layer, or second part.

[0063] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “the,” and “at least one” do not indicate a limitation on quantity and are intended to include both the singular and the plural unless the context clearly indicates otherwise. For example, “element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” should not be construed as limited to “a” or “the.” As those skilled in the art will understand, “or” means “and / or,” depending on the context of the specification and not limited thereto. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will be further understood that, when used in this specification, the terms “comprising” and / or “including” or “containing” and / or “having” indicate the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or combinations thereof.

[0064] As used herein, expressions such as “at least one,” “one of,” and “selected from” modify the entire list of elements when they precede the list of elements, but do not modify the individual elements in the list.

[0065] Furthermore, when describing embodiments of this disclosure, the use of "may" refers to "one or more embodiments of this disclosure".

[0066] Furthermore, relative terms such as “below” or “bottom” and “above” or “top” may be used herein to describe the relationship between one element and another as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device other than those depicted in the figures. For example, if the device in one of the figures is flipped, the element described as being “below” the other element will be oriented “above” the other element. Thus, the term “below” can encompass both “below” and “above” orientations, depending on the specific orientation of the figure. Similarly, if the device in one of the figures is flipped, the element described as being “below” or “under” the other element will be oriented “above” the other element. Thus, the term “below” or “under” can encompass both “above” and “below” orientations.

[0067] Taking into account measurement issues and the errors associated with a particular number of measurements (i.e., limitations of the measurement system), the terms “about,” “substantially,” or “approximately,” as used herein, include the value and indicate an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, or ±5% of the value.

[0068] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms such as those defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0069] The embodiments described herein are illustrated with cross-sectional views that are idealized embodiments. Thus, variations in the illustrated shapes, such as those due to manufacturing techniques and / or tolerances, should be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but should include deviations in shape, such as those due to manufacturing processes. For example, areas shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to show the precise shapes of the areas and are not intended to limit the scope of the claims.

[0070] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0071] Figure 1 This is a cross-sectional view showing the stacked structure of a display device according to an embodiment of the present disclosure.

[0072] Figure 1 The display device 1 shown can be used in a variety of electronic devices, including small and medium-sized electronic devices (such as tablet PCs, smartphones, vehicle navigation units, cameras, central information displays (CIDs) installed in vehicles, wrist-worn electronic devices, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles) as well as medium and large-sized electronic devices (such as televisions, electronic billboards, monitors, personal computers, and laptop computers). It should be understood that the electronic devices listed above are merely exemplary, and the display device 1 can be used in a variety of other electronic devices without departing from the scope of this disclosure.

[0073] Display device 1 may include a display area DA in which an image is displayed and a non-display area NDA in which no image is displayed. In some embodiments, the non-display area NDA may be disposed around the display area DA. The image displayed in the display area DA can be seen by a user from a third side towards the side indicated by the arrow on the Z-axis.

[0074] In some embodiments, such as Figure 1 As shown, the stacked structure of the display device 1 may include a display substrate 10 and a color conversion substrate 30 opposite to the display substrate 10, and may further include a sealing member 50 for coupling the display substrate 10 and the color conversion substrate 30 and a filler 70 for filling the space between the display substrate 10 and the color conversion substrate 30.

[0075] The display substrate 10 may include elements and circuitry for displaying images (e.g., pixel circuitry such as switching elements), a pixel defining layer for defining emitting and non-emitting areas in the display area DA (described in more detail below), and a self-emissive element. In embodiments, the self-emissive element may include at least one of organic light-emitting diodes (OLEDs), quantum dot OLEDs, inorganic micro-LEDs (e.g., micro-LEDs), and inorganic nano-LEDs with nanoscale dimensions (e.g., nano-LEDs). In the following description, for ease of illustration, organic light-emitting diodes will be described in more detail as an example of a self-emissive element.

[0076] The color conversion substrate 30 may be located on the display substrate 10 and may face the display substrate 10. In some embodiments, the color conversion substrate 30 may include a color conversion pattern that converts the color of incident light. In some embodiments, the color conversion substrate 30 may include a color filter and / or a wavelength conversion pattern as a color conversion pattern. In some embodiments, the color conversion substrate 30 may include both a color filter and a wavelength conversion pattern.

[0077] A sealing member 50 may be disposed in the non-display area NDA between the display substrate 10 and the color conversion substrate 30. The sealing member 50 may be disposed along the edges of the display substrate 10 and the color conversion substrate 30 in the non-display area NDA to surround the display area DA in a plan view or when viewed from above. The display substrate 10 and the color conversion substrate 30 may be coupled to each other via the sealing member 50.

[0078] In some embodiments, the sealing member 50 may be made of an organic material. For example, the sealing member 50 may be made of (but is not limited to) epoxy resin. In some other embodiments, the sealing member 50 may be in the form of a glass frit.

[0079] The filler 70 can be located in the space between the display substrate 10 and the color conversion substrate 30, surrounded by the sealing member 50. The filler 70 can be used to fill the space between the display substrate 10 and the color conversion substrate 30.

[0080] In some embodiments, the filler 70 may be made of a light-transmitting material. In some embodiments, the filler 70 may be made of an organic material. For example, the filler 70 may be made of a silicon-based organic material, an epoxy-based organic material, or a mixture of silicon-based organic materials, epoxy-based organic materials, etc.

[0081] In some embodiments, the filler 70 may be made of a material having a substantially zero extinction coefficient. Refractive index and extinction coefficient are related, and therefore, the refractive index decreases as the extinction coefficient decreases. If the refractive index is approximately 1.7 or less, the extinction coefficient may converge to substantially zero. In some embodiments, the filler 70 may be made of a material having a refractive index of approximately 1.7 or less. Accordingly, light provided by the self-emissive element may be prevented or substantially prevented from passing through the filler 70 and being absorbed by the filler 70. In some embodiments, the filler 70 may be made of an organic material having a refractive index of approximately 1.4 to approximately 1.6.

[0082] Figure 2 This is a plan view of a display device according to an embodiment of the present disclosure. Figure 3 yes Figure 2 A magnified plan view of part Q1, more specifically in Figure 2 A plan view of the display substrate included in the display device. Figure 4 yes Figure 2 A magnified plan view of part Q1, more specifically in Figure 2 A plan view of the color conversion substrate included in the display device. Figure 5 yes Figure 3 The example shown is a variant of the plan view. Figure 6 It is shown Figure 4 The example shown is a variant of the plan view. Figure 7 yes Figure 2 A magnified plan view of part Q3. Figure 8 yes Figure 2 A magnified plan view of part of Q5.

[0083] Combination Figure 1 refer to Figures 2 to 8 In some embodiments, such as Figure 2 As shown, the display device 1 can be formed into a rectangular shape in a plan view or when viewed from above. The display device 1 may include two sides extending in a first direction X (e.g., a first side L1 and a third side L3) and two sides extending in a second direction Y intersecting the first direction X (e.g., a second side L2 and a fourth side L4). Although the corners where these sides meet can form right angles, this disclosure is not limited thereto. In some embodiments, the lengths of the first side L1 and the third side L3 may differ from the lengths of the second side L2 and the fourth side L4. For example, the first side L1 and the third side L3 may be longer than the second side L2 and the fourth side L4. The shape of the display device 1 in a plan view or when viewed from above is not limited to the shape shown in the figures. For example, the display device 1 may have a circular shape or any other suitable shape.

[0084] In some embodiments, the display device 1 may further include a flexible circuit board (FPC) and a driver chip (IC).

[0085] like Figure 3 As shown, multiple emission regions LA1, LA2 and LA3 and a non-emission region NLA can be confined in the display substrate 10 in the display region DA.

[0086] In some embodiments, the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3 may be defined within the display region DA of the display substrate 10. Light generated in the light-emitting elements of the display substrate 10 is emitted from the display substrate 10 in the emitting regions LA1, LA2, and LA3. No light is emitted from the display substrate 10 in the non-emitting region NLA. In some embodiments, the non-emitting region NLA may surround the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3 within the display region DA.

[0087] In some embodiments, the light emitted from the first emission region LA1, the second emission region LA2, and the third emission region LA3 may be light of a third color. In some embodiments, the third color light may be blue light and may have a peak wavelength in the range of approximately 440 nm to approximately 480 nm. As used herein, peak wavelength refers to the wavelength at which the light intensity is maximum or highest.

[0088] In some embodiments, the first emission area LA1, the second emission area LA2, and the third emission area LA3 may form a single group, and multiple such groups may be defined in the display area DA.

[0089] In some embodiments, such as Figure 3 As shown, the first transmission area LA1, the second transmission area LA2, and the third transmission area LA3 can be positioned sequentially along the first direction X. In some embodiments, the first transmission area LA1, the second transmission area LA2, and the third transmission area LA3 can form a single group and can be arranged repeatedly along the first direction X and along the second direction Y.

[0090] However, it should be understood that this disclosure is not limited thereto. The arrangement of the first launch area LA1, the second launch area LA2, and the third launch area LA3 can be changed in various ways and in suitable manners. For example, as Figure 5 As shown, the first transmission area LA1 and the second transmission area LA2 can be adjacent to each other along the first direction X, while the third transmission area LA3 can be located on one side of the first transmission area LA1 and the second transmission area LA2 along the second direction Y.

[0091] The following description will describe in more detail the arrangement of the first launch area LA1, the second launch area LA2, and the third launch area LA3 as follows: Figure 3 The example shown.

[0092] like Figure 4 As shown, multiple light-transmitting areas TA1, TA2, and TA3, and a light-blocking area BA, can be defined within the color conversion substrate 30 in the display area DA. In the light-transmitting areas TA1, TA2, and TA3, light emitted from the display substrate 10 can pass through the color conversion substrate 30 to be provided to the outside of the display device 1. The light-blocking area BA can be an area through which light emitted from the display substrate 10 cannot pass.

[0093] In some embodiments, the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 may be defined in the color conversion substrate 30.

[0094] The first light-transmitting region TA1 may correspond to or overlap with the first emitting region LA1. In one or more embodiments, the first light-transmitting region TA1 may have a size equal to that of the first emitting region LA1. Similarly, the second light-transmitting region TA2 may correspond to or overlap with the second emitting region LA2, and the third light-transmitting region TA3 may correspond to or overlap with the third emitting region LA3. In one or more embodiments, the second light-transmitting region TA2 may have a size equal to that of the second emitting region LA2, and the third light-transmitting region TA3 may have a size equal to that of the third emitting region LA3.

[0095] In some embodiments, when such Figure 3 When the first launch area LA1, the second launch area LA2, and the third launch area LA3 shown are arranged sequentially along the first direction X, as follows: Figure 4 The first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3 shown in the diagram can also be arranged sequentially along the first direction X.

[0096] Alternatively, when such Figure 5 When the first emission region LA1 and the second emission region LA2 are adjacent to each other in the first direction X, and the third emission region LA3 is located on one side of the first emission region LA1 and the second emission region LA2 in the second direction Y, as shown... Figure 6 The first light-transmitting area TA1 and the second light-transmitting area TA2 shown in the diagram can be adjacent to each other in the first direction X, while the third light-transmitting area TA3 can be located on one side of the first light-transmitting area TA1 and the second light-transmitting area TA2 in the second direction Y.

[0097] In some embodiments, light of a third color provided from the display substrate 10 can pass through the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 to exit from the display device 1. In the following description, the light exiting from the display device 1 through the first light-transmitting region TA1 is referred to as first emitted light, the light exiting from the display device 1 through the second light-transmitting region TA2 is referred to as second emitted light, and the light exiting from the display device 1 through the third light-transmitting region TA3 is referred to as third emitted light. The first emitted light can be light of a first color, the second emitted light can be light of a second color different from the first color, and the third emitted light can be light of a third color. In some embodiments, the third color light can be blue light having a peak wavelength in the range of approximately 440 nm to approximately 480 nm, as described above, and the first color light can be red light having a peak wavelength in the range of approximately 610 nm to approximately 650 nm. Furthermore, the second color light can be green light having a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0098] The light-blocking area BA can be disposed in the display area DA, surrounding the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. In some embodiments, the light-blocking area BA can surround the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. Alternatively, the light-blocking area BA can also be located in the non-display area NDA of the display device 1.

[0099] Return to reference Figure 2 The dam component DM, the sealing component 50, and the first support component (not shown) can be disposed in the non-display area NDA of the display device 1.

[0100] The dam component DM can block or substantially block the overflow of organic material (or monomer) in the process of forming the encapsulation layer disposed in the display area DA, thereby preventing or substantially preventing the organic material in the encapsulation layer from extending toward the edge of the display device 1.

[0101] In some embodiments, the dam component DM may be configured to surround (e.g., completely surround) the display area DA in a plan view or when viewed from above.

[0102] The sealing member 50 can be coupled to the display substrate 10 and the color conversion substrate 30 as described above.

[0103] The sealing member 50 may be located in the non-display area NDA and outside the dam member DM, and may be configured to surround (e.g., completely surround) the dam member DM and the display area DA in a plan view or when viewed from above.

[0104] The non-display area NDA of the display device 1 may include a pad area PDA, and multiple connection pads PD may be located in the pad area PDA.

[0105] In some embodiments, the connection pad PD can be positioned adjacent to one side (e.g., the longer side) of the non-display area NDA. For example, the connection pad PD can be configured to be adjacent to the first side L1 in the non-display area NDA. The connection pad PD can be connected (e.g., electrically connected) to pixel circuits or the like located in the display area DA via a connection line or the like.

[0106] The display substrate 10 of the display device 1 (for example, see...) Figure 1 It may include dam components (DM) and connecting pads (PD).

[0107] The flexible printed circuit board (FPC) can be connected to the connection pads (PD). The flexible printed circuit board (FPC) can also display the substrate 10 (e.g., see...). Figure 1 It is connected (e.g., electrically connected) to a circuit board that provides signals, power, etc. for driving the display device 1.

[0108] The driver chip IC can be connected (e.g., electrically connected) to a circuit board or similar device to receive data and signals. In some embodiments, the driver chip IC may include a data driver chip and can receive data control signals and image data from the circuit board to generate and output a data voltage associated with the image data.

[0109] In some embodiments, the driver chip IC can be mounted on the flexible circuit board (FPC). For example, the driver chip IC can be mounted on the FPC using any suitable chip-on-film (COF) technology known to those skilled in the art.

[0110] Data voltage supplied from the driver chip IC and power supply voltage supplied from the circuit board can be transmitted to the display substrate 10 via the flexible printed circuit board (FPC) and connection pads (PD) (see, for example, see...). Figure 1 ) pixel circuit.

[0111] The structure of the display device 1 will be described in more detail below.

[0112] Figure 9 It is along Figure 3 and Figure 4 A cross-sectional view of a display device according to an embodiment of the present disclosure, taken by line X1-X1'. Figure 10 yes Figure 9 Enlarged cross-sectional view of part of Q7. Figure 11 It is shown Figure 10 A cross-sectional view of a variant of the structure shown. Figure 12 It is along Figure 7 A cross-sectional view of a display device according to an embodiment of the present disclosure, taken by line X3-X3'.

[0113] Combination Figures 1 to 8 refer to Figures 9 to 12 The display device 1 may include a display substrate 10 and a color conversion substrate 30 as described above, and may further include a filler 70 disposed between the display substrate 10 and the color conversion substrate 30.

[0114] The display substrate 10 will be described in more detail below.

[0115] The first substrate 110 may be made of a light-transmitting material. In some embodiments, the first substrate 110 may be a glass substrate or a plastic substrate. When the first substrate 110 is a plastic substrate, the first substrate 110 may be flexible.

[0116] In some embodiments, a plurality of emitting regions LA1, LA2 and LA3 and a non-emitting region NLA may be defined on a first substrate 110 in the display region DA, as similarly described above.

[0117] In some embodiments, the first side L1, the second side L2, the third side L3, and the fourth side L4 of the display device 1 may be the same as the four sides of the first substrate 110. That is, the first side L1, the second side L2, the third side L3, and the fourth side L4 of the display device 1 may be referred to as the first side L1, the second side L2, the third side L3, and the fourth side L4 of the first substrate 110, respectively.

[0118] A buffer layer 111 may be further disposed on the first substrate 110. The buffer layer 111 may be disposed on the first substrate 110 in the display area (DA) and non-display area (NDA). The buffer layer 111 can block or substantially block foreign substances or moisture from permeating the first substrate 110. For example, the buffer layer 111 may include inorganic materials (such as SiO2, SiN...). x It can be composed of a single layer or multiple layers (including SiON).

[0119] A light-blocking layer BML can be disposed on the buffer layer 111. The light-blocking layer BML can block or substantially block external light or light from the light-emitting element from entering the semiconductor layer ACT, which will be described in more detail below, thereby preventing or substantially preventing leakage current generated by light in the thin-film transistor TL.

[0120] In some embodiments, the light-blocking layer BML may be made of a material that blocks light and is conductive. For example, the light-blocking layer BML may include a single metallic material (such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd)) or alloys thereof. In some embodiments, the light-blocking layer BML may be composed of a single layer or multiple layers. For example, when the light-blocking layer BML is composed of multiple layers, the light-blocking layer BML may be (but is not limited to) a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3).

[0121] In some embodiments, multiple light-blocking layers (BMLs) may be provided. The number of light-blocking layers (BMLs) may be equal to the number of semiconductor layers (ACTs). The light-blocking layers (BMLs) may overlap with the semiconductor layers (ACTs). In some embodiments, the width of the light-blocking layers (BMLs) may be greater than or wider than the width of the semiconductor layers (ACTs).

[0122] In some embodiments, the light-blocking layer BML may be part of a data line, a voltage supply line, or a line connecting (e.g., electrically connecting) a thin-film transistor to the thin-film transistor TL shown in the figure. In some embodiments, the light-blocking layer BML may be made of a material having a resistance lower than that of the second conductive layer or the source electrode SE and drain electrode ED included in the second conductive layer.

[0123] The first insulating layer 113 may be disposed on the light-blocking layer BML. In some embodiments, the first insulating layer 113 may be disposed in the display area DA and the non-display area NDA. The first insulating layer 113 may cover the light-blocking layer BML. In some embodiments, the first insulating layer 113 may include inorganic materials (such as SiO2, SiN). x , SiON, Al2O3, TiO2, Ta2O, HfO2 and ZrO2).

[0124] The semiconductor layer ACT can be disposed on the first insulating layer 113. In some embodiments, the semiconductor layer ACT can be disposed in the first emission region LA1, the second emission region LA2, and the third emission region LA3 in the display region DA, respectively.

[0125] In some embodiments, the semiconductor layer ACT may comprise an oxide semiconductor. For example, the semiconductor layer ACT may be made of Zn oxide, In-Zn oxide, Ga-In-Zn oxide, etc., which are Zn oxide materials, and may be an IGZO (In-Ga-Zn-O) semiconductor containing metals (such as indium (In) and gallium (Ga)) in ZnO. However, it should be understood that this disclosure is not limited thereto. The semiconductor layer ACT may comprise amorphous silicon or polycrystalline silicon.

[0126] In some embodiments, the semiconductor layer ACT can be configured to overlap with the light-blocking layer BML, thereby suppressing the generation of photocurrent in the semiconductor layer ACT.

[0127] The first conductive layer can be disposed on the semiconductor layer ACT and may include a gate electrode GE, a first gate metal WR1, and a second gate metal (not shown). The gate electrode GE can be disposed in the display area DA to overlap with each semiconductor layer ACT. Figure 12 As shown, the first gate metal WR1 may include a connection pad PD (e.g., see...). Figure 2 ) and located in the display area DA (for example, see Figure 2 A portion of the line connecting (e.g., electrical connection) the components (e.g., thin-film transistors (TL) and light-emitting elements) in a device.

[0128] The gate electrode GE and the first gate metal WR1 may include at least one of the following materials: aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu). Considering the adhesion to adjacent layers, the surface flatness of the layers to be laminated, and the processability, the gate electrode GE and the first gate metal WR1 may be composed of a single layer or multiple layers.

[0129] In the display area DA, the gate insulating layer 115 may be disposed between the semiconductor layer ACT and the first conductive layer, or between the semiconductor layer ACT and the gate electrode GE. In some embodiments, the gate electrode GE and the gate insulating layer 115 may serve as a mask for masking the channel region of the semiconductor layer ACT, or act as a mask for masking the channel region of the semiconductor layer ACT, and the width of the gate electrode GE and the width of the gate insulating layer 115 may be less than or shorter than the width of the semiconductor layer ACT.

[0130] In some embodiments, the gate insulating layer 115 may not be composed of a single layer disposed on the entire surface of the first substrate 110, but may be formed in a partially patterned shape. In some embodiments, the width of the gate insulating layer 115 may be greater than or wider than the width of the gate electrode GE or the first conductive layer.

[0131] In some embodiments, the gate insulating layer 115 may include an inorganic material. For example, the gate insulating layer 115 may include the inorganic materials listed above that may be included in the first insulating layer 113.

[0132] In the non-display area NDA, the gate insulating layer 115 may be located between the first gate metal WR1 and the first insulating layer 113.

[0133] A second insulating layer 117 covering the semiconductor layer ACT and the gate electrode GE can be disposed on the gate insulating layer 115. The second insulating layer 117 can be located in the display area DA and the non-display area NDA. In some embodiments, the second insulating layer 117 can be used as a planarization layer to provide a flat surface or serve as a planarization layer to provide a flat surface.

[0134] In some embodiments, the second insulating layer 117 may include an organic material. For example, the second insulating layer 117 may include (but is not limited to) at least one of photoacryloyl (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyaryl ether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene series resin, siloxane series resin, and silane resin.

[0135] The second conductive layer may be disposed on the second insulating layer 117, and the second conductive layer may include a source electrode SE, a drain electrode DE, a voltage supply line VSL, and a first pad electrode PD1 connected to the pad PD.

[0136] The source electrode SE and the drain electrode DE can be located in the display area DA and can be separated from each other (e.g., spaced apart).

[0137] The drain electrode DE and the source electrode SE can be connected to the semiconductor layer ACT through the second insulating layer 117.

[0138] In some embodiments, the source electrode SE may pass through the first insulating layer 113 and the second insulating layer 117 and may be connected to the light-blocking layer BML. If the light-blocking layer BML is part of a line transmitting a signal or voltage, the source electrode SE may be connected to and electrically coupled to the light-blocking layer BML and may receive voltage applied to that line. Alternatively, if the light-blocking layer BML is a floating pattern rather than a separate line, the voltage applied to the source electrode SE, etc., may be transmitted to the light-blocking layer BML.

[0139] Alternatively, with Figure 9 Unlike the example shown, the drain electrode DE can pass through the first insulating layer 113 and the second insulating layer 117 and can be connected to the light-blocking layer BML. If the light-blocking layer BML is not a line that receives a separate signal, the voltage applied to the drain electrode DE, etc., can be transmitted to the light-blocking layer BML.

[0140] The semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a thin-film transistor TL, which is a switching element. In some embodiments, the thin-film transistor TL can be disposed in each of the first emitter region LA1, the second emitter region LA2, and the third emitter region LA3. In some embodiments, a portion of the thin-film transistor TL can be located in the non-emitter region NLA.

[0141] The voltage supply line VSL can be located in the non-display area NDA. The supply voltage (e.g., voltage) applied to the cathode electrode CE can be supplied to the voltage supply line VSL.

[0142] The first pad electrode PD1, which connects to the pad PD, can be located in the pad area of ​​the non-display area NDA (see, for example, see...). Figure 2 In some embodiments, the first pad electrode PD1 may pass through the second insulating layer 117 and may be connected (e.g., electrically connected) to the first wiring layer (or the first gate metal WR1).

[0143] The source electrode SE, drain electrode DE, voltage supply line VSL, and first pad electrode PD1 connecting to the pad PD may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be composed of multiple layers or a single layer. According to embodiments of this disclosure, the source electrode SE, drain electrode DE, voltage supply line VSL, and first pad electrode PD1 connecting to the pad PD may be composed of a Ti / Al / Ti multilayer structure.

[0144] The third insulating layer 130 may be disposed on the second insulating layer 117. The third insulating layer 130 may cover the thin-film transistor TL in the display area DA and may expose a portion of the voltage supply line VSL in the non-display area NDA.

[0145] In some embodiments, the third insulating layer 130 may be a planarization layer. In some embodiments, the third insulating layer 130 may be made of an organic material. For example, the third insulating layer 130 may include acrylic resin, epoxy resin, imide resin, or ester resin, etc. In some embodiments, the third insulating layer 130 may include a photosensitive organic material.

[0146] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be disposed on the third insulating layer 130 of the display area DA. Additionally, the connecting electrode CNE and the second pad electrode PD2, which connects to the pad PD, can be disposed on the third insulating layer 130 in the non-display area NDA.

[0147] The first anode electrode AE1 may overlap with the first emitter region LA1 and may extend at least partially into the non-emitter region NLA. For example, the end of the first anode electrode AE1 may be located within the non-emitter region NLA. The second anode electrode AE2 may overlap with the second emitter region LA2 and may extend at least partially into the non-emitter region NLA, and the third anode electrode AE3 may overlap with the third emitter region LA3 and may extend at least partially into the non-emitter region NLA. For example, the end of the second anode electrode AE2 may be located within the non-emitter region NLA, and the end of the third anode electrode AE3 may be located within the non-emitter region NLA. The first anode electrode AE1 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the first anode electrode AE1. The second anode electrode AE2 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the second anode electrode AE2. The third anode electrode AE3 may pass through the third insulating layer 130 and may be connected to the drain electrode DE of the thin-film transistor TL associated with the third anode electrode AE3.

[0148] In some embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be reflective electrodes. In this case, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be metal layers containing metals (such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr). In other embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may further include metal oxide layers stacked on the metal layers. In embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may have a multilayer structure (e.g., a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2, or a three-layer structure of ITO / Ag / ITO).

[0149] The connecting electrode CNE can be connected (e.g., electrically connected) to the voltage supply line VSL in the non-display area NDA and can be in contact with the voltage supply line VSL (e.g., in direct contact).

[0150] The second pad electrode PD2 can be disposed on the first pad electrode PD1 in the non-display area NDA. The second pad electrode PD2 can contact (e.g., directly contact) and be connected (e.g., electrically connected) to the first pad electrode PD1.

[0151] In some embodiments, the connecting electrode CNE and the second pad electrode PD2 may be made of the same material as the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3, and may be formed together with the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3 via the same manufacturing process (e.g., formed simultaneously).

[0152] Pixel defining layer 150 may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. Pixel defining layer 150 may include openings for exposing the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, and may define a first emission region LA1, a second emission region LA2, a third emission region LA3, and a non-emission region NLA. That is, the exposed portion of the first anode electrode AE1 not covered by pixel defining layer 150 may be the first emission region LA1. Similarly, the exposed portion of the second anode electrode AE2 not covered by pixel defining layer 150 may be the second emission region LA2. The exposed portion of the third anode electrode AE3 not covered by pixel defining layer 150 may be the third emission region LA3. Pixel defining layer 150 may be located within the non-emission region NLA.

[0153] In some embodiments, the pixel defining layer 150 may include an organic insulating material (such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, and benzocyclobutene (BCB)).

[0154] In some embodiments, the pixel defining layer 150 may overlap with the color pattern 250 and the light-blocking pattern 260, which will be described in more detail below.

[0155] Additionally, in some embodiments, the pixel defining layer 150 may overlap with the dike pattern 370, which will be described in more detail below.

[0156] like Figure 9 and Figure 12As shown, the emitter layer OL can be disposed on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0157] In some embodiments, the emitter layer OL may have the shape of a continuous film spanning multiple emitter regions LA1, LA2, and LA3 and a non-emitter region NLA. Although the emitter layer OL is depicted only in the display region DA in the figures, the emitter layer OL is not limited thereto. In some other embodiments, a portion of the emitter layer OL may be located in the non-display region NDA. The emitter layer OL will be described in more detail below.

[0158] The cathode electrode CE can be disposed on the emitter layer OL. A portion of the cathode electrode CE can be located in the non-display area NDA. The cathode electrode CE can be connected (e.g., electrically connected) to and in contact with the connection electrode CNE in the non-display area NDA. A supply voltage (e.g., the voltage applied to the voltage supply line VSL) can be transmitted to the cathode electrode CE via the connection electrode CNE.

[0159] In some embodiments, the cathode electrode CE can be either transmissive or reflective. If the cathode electrode CE is transmissive, it can comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or compounds or mixtures thereof (e.g., mixtures of Ag and Mg), as well as bilayer structures of LiF / Ca or LiF / Al. Furthermore, if the thickness of the cathode electrode CE is in the range of tens to hundreds of angstroms, the cathode electrode CE can be transmissive or reflective.

[0160] When the cathode electrode CE is transmissive, the cathode electrode CE can comprise a transparent conductive oxide (TCO). For example, the cathode electrode CE can be made of tungsten oxide (W). x O x It is formed from titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO), etc.

[0161] In some embodiments, the cathode electrode CE may cover (e.g., completely cover) the emitter layer OL. In some embodiments, such as Figure 12 As shown, the end of the cathode electrode CE can be located closer to the outside than the end of the emitter layer OL, and the end of the emitter layer OL can be covered by the cathode electrode CE (e.g., completely covered).

[0162] The first anode electrode AE1, the emitting layer OL, and the cathode electrode CE can form a first light-emitting diode ED1; the second anode electrode AE2, the emitting layer OL, and the cathode electrode CE can form a second light-emitting diode ED2; and the third anode electrode AE3, the emitting layer OL, and the cathode electrode CE can form a third light-emitting diode ED3. Each of the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 can emit emitted light LE.

[0163] like Figure 10 As shown, the emitted light LE ultimately emitted from the emitting layer OL can be a mixture of a first component LE1 and a second component LE2. Each of the first component LE1 and the second component LE2 of the emitted light LE can have a peak wavelength equal to or greater than approximately 440 nm and less than approximately 480 nm. That is, the emitted light LE can be blue light.

[0164] like Figure 10 As shown, in some embodiments, the emitter layer OL may have a structure in which multiple emitter material layers overlap each other (e.g., a tandem structure). For example, the emitter layer OL may include a first stack ST1 containing a first emitter material layer EML1, a second stack ST2 disposed on the first stack ST1 and containing a second emitter material layer EML2, a third stack ST3 disposed on the second stack ST2 and containing a third emitter material layer EML3, a first charge generating layer CGL1 disposed between the first stack ST1 and the second stack ST2, and a second charge generating layer CGL2 disposed between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may overlap each other.

[0165] The first emission material layer EML1, the second emission material layer EML2, and the third emission material layer EML3 can overlap each other.

[0166] In some embodiments, the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can all emit light of a first color (e.g., blue light). For example, each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be a blue emitting layer and can include organic materials.

[0167] In some embodiments, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength, and at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength different from the first peak wavelength. For example, one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength, and the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength. Specifically, the emitted light LE ultimately emitted from the emitting layer OL can be a mixture of a first component LE1 and a second component LE2, where the first component LE1 can be first blue light having a first peak wavelength, and the second component LE2 can be second blue light having a second peak wavelength.

[0168] In some embodiments, the range of one of the first peak wavelength and the second peak wavelength may be equal to or greater than approximately 440 nm and less than approximately 460 nm, and the range of the other of the first peak wavelength and the second peak wavelength may be equal to or greater than approximately 460 nm and less than approximately 480 nm. However, it should be understood that the range of the first peak wavelength and the range of the second peak wavelength are not limited thereto. For example, both the range of the first peak wavelength and the range of the second peak wavelength may include approximately 460 nm. In some embodiments, one of the first blue light and the second blue light may be deep blue light, while the other of the first blue light and the second blue light may be sky blue light.

[0169] According to some embodiments, the emitted light LE from the emitting layer OL is blue light and may include long-wavelength components and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light as the emitted light LE with a broadly distributed emission peak. In this way, compared to existing light-emitting elements that emit blue light with a sharp emission peak, it has the advantage of improved color visibility at side viewing angles.

[0170] In some embodiments, each of the first emitter material layer EML1, the second emitter material layer EML2, and the third emitter material layer EML3 may include a host and a dopant. The material of the host is not specifically limited herein, and any suitable material may be used. For example, the host material may include Alq3 (tris(8-hydroxyquinolinyl)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcarbazole)), ADN (9,10-bis(2-naphthyl)anthracene), TCTA (4,4',4”-tris(9-carbazolyl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene), TBADN (3-tert-butyl-9,10-bis(2-naphthyl)anthracene), DSA (stilbene-aromatic), CDBP (4,4'-bis(9-carbazolyl)-2,2”-dimethyl-biphenyl) or MADN (2-methyl-9,10-bis(2-naphthyl)anthracene), etc.

[0171] Each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 that emits blue light may include a fluorescent material selected from the group consisting of spirocyclic-DPVBi, spirocyclic-6P, DSB (stilbene), DSA (stilbene), PFO (polyfluorene) polymers, and PPV (poly(p-phenylenevinylene) polymers). As another example, each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 may include a phosphorescent material comprising an organometallic composite (such as (4,6-F2ppy)2Irpic).

[0172] As described above, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit blue light in a wavelength band different from that of at least one of the other three emitting material layers EML1, EML2, and EML3. To emit blue light in different wavelength ranges, the first emitting material layer EML1, EML2, and EML3 can comprise the same material, and the resonant distance can be adjusted. Alternatively, to emit blue light in different wavelength ranges, at least one of the first emitting material layer EML1, EML2, and EML3, and at least one of the other three emitting material layers EML3, can comprise materials different from each other.

[0173] However, it should be understood that this disclosure is not limited thereto. The blue light emitted by each of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can all have a peak wavelength of approximately 440 nm to approximately 480 nm, and can be made of the same material.

[0174] Alternatively, according to another embodiment, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit first blue light having a first peak wavelength; another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit second blue light having a second peak wavelength different from the first peak wavelength; and yet another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit third blue light having a third peak wavelength different from the first and second peak wavelengths. In some other embodiments, the range of one of the first, second, and third peak wavelengths can be equal to or greater than approximately 440 nm and less than approximately 460 nm. The range of another of the first, second, and third peak wavelengths can be equal to or greater than approximately 460 nm and less than approximately 470 nm. The range of yet another of the first, second, and third peak wavelengths can be equal to or greater than approximately 470 nm and less than approximately 480 nm.

[0175] According to some other embodiments, the emitted light LE from the emitting layer OL can be blue light and can include long-wavelength components, medium-wavelength components, and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light as the emitted light LE with a broadly distributed emission peak, and can improve color visibility at side viewing angles.

[0176] Compared to existing light-emitting elements that do not employ a series structure (i.e., a structure in which multiple light-emitting elements are stacked on top of each other), the display device according to the above embodiments has the advantages of improving luminous efficiency and increasing the lifespan of the display device.

[0177] Alternatively, according to some other embodiments, at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit light of a third color (e.g., blue light), and at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can emit light of a second color (e.g., green light). In some other embodiments, the peak wavelength range of the blue light emitted by at least one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be from approximately 440 nm to approximately 480 nm or from approximately 460 nm to approximately 480 nm. The green light emitted by at least another of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can have a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0178] For example, one of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be a green emitting material layer that emits green light, while the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 can be blue emitting material layers that emit blue light. When the other two of the first emitting material layer EML1, the second emitting material layer EML2, and the third emitting material layer EML3 are blue emitting material layers, the peak wavelength ranges of the blue light emitted by the two blue emitting material layers can be equal to or different from each other.

[0179] According to some other embodiments, the emitted light LE emitted by the emitting layer OL can be a mixture of a first component LE1 (which is blue light) and a second component LE2 (which is green light). For example, when the first component LE1 is deep blue light and the second component LE2 is green light, the emitted light LE can be light with a sky blue color. Similar to the embodiments described above, the emitted light LE emitted from the emitting layer OL is a mixture of blue and green light, and includes both long-wavelength and short-wavelength components. Therefore, ultimately, the emitting layer OL can emit blue light with a widely distributed emission peak as the emitted light LE, and can improve color visibility at side viewing angles. In addition, since the second component LE2 of the emitted light LE is green light, it can supplement the green light component of the light supplied from the display device 1 to the outside, and thus can improve the color gamut of the display device 1.

[0180] In some other embodiments, the green emission material layers in the first emission material layer EML1, the second emission material layer EML2, and the third emission material layer EML3 may include a host and a dopant. The materials of the host included in the green emitting material layer are not specifically limited herein, and any suitable materials may be used. For example, the host material may include Alq3 (tris(8-hydroxyquinolinyl)aluminum), CBP (4,4'-bis(N-carbazolyl)-1,1'-biphenyl), PVK (poly(n-vinylcarbazole)), ADN (9,10-bis(2-naphthyl)anthracene), TCTA (4,4',4”-tris(9-carbazolyl)-triphenylamine), TPBi (1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene), TBADN (3-tert-butyl-9,10-bis(2-naphthyl)anthracene), DSA (stilbene-aromatic), CDBP (4,4'-bis(9-carbazolyl)-2,2”-dimethyl-biphenyl) or MADN (2-methyl-9,10-bis(2-naphthyl)anthracene), etc.

[0181] The dopants included in the green emitting material layer may include, for example, fluorescent materials (such as Alq3(tris(8-hydroxyquinoline)aluminum(III)) or phosphorescent materials (such as Ir(ppy)3(fac-tris(2-phenylpyridine)iridium), Ir(ppy)2(acac)(bis(2-phenylpyridine)(acetylacetone)iridium(III)) and Ir(mpyp)3(2-phenyl-4-methylpyridineiridium)).

[0182] A first charge generation layer CGL1 may be disposed between a first stack ST1 and a second stack ST2. The first charge generation layer CGL1 can be used to inject charge into a first emitter material layer EML1 and a second emitter material layer EML2. The first charge generation layer CGL1 can control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0183] The first charge generation layer CGL1 may have a junction structure in which an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12 are bonded to each other. The n-type charge generation layer CGL11 is positioned closer to the anode electrodes AE1, AE2, and AE3 than to the cathode electrode CE. The p-type charge generation layer CGL12 is positioned closer to the cathode electrode CE than to the anode electrodes AE1, AE2, and AE3. The n-type charge generation layer CGL11 supplies electrons to the first emitting material layer EML1 adjacent to the anode electrodes AE1, AE2, and AE3, and the p-type charge generation layer CGL12 supplies holes to the second emitting material layer EML2 included in the second stack ST2. By distributing the first charge generation layer CGL1 between the first stack ST1 and the second stack ST2, charge is applied to each of the emitting material layers to improve luminous efficiency and reduce the supply voltage.

[0184] The first stack ST1 may be disposed on the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3, and may further include the first hole transport layer HTL1, the first electron blocking layer BIL1 and the first electron transport layer ETL1.

[0185] The first hole transport layer HTL1 can be disposed on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The first hole transport layer HTL1 can facilitate hole transport and may include hole transport materials. Hole transport materials may include (but are not limited to) carbazole derivatives (such as N-phenylcarbazole and polyvinylcarbazole), fluorene derivatives, triphenylamine derivatives (such as TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine) and TCTA (4,4',4"-tris(N-carbazolyl)triphenylamine)), NPB (N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine), TAPC (4,4'-cyclohexylenebis[N,N-bis(4-methylphenyl)aniline]), etc.

[0186] A first electron blocking layer (BIL1) may be disposed on a first hole transport layer (HTL1) and may be located between the first hole transport layer (HTL1) and the first emitter material layer (EML1). The first electron blocking layer (BIL1) may include a hole transport material and a metal or metal compound to prevent or substantially prevent electrons generated in the first emitter material layer (EML1) from flowing into the first hole transport layer (HTL1). In some embodiments, the first hole transport layer (HTL1) and the first electron blocking layer (BIL1) may be composed of a monolayer in which materials are mixed.

[0187] The first electron transport layer ETL1 may be disposed on the first emission material layer EML1 and may be located between the first charge generation layer CGL1 and the first emission material layer EML1. In some embodiments, the first electron transport layer ETL1 may include an electron transport material (such as Alq3 (tris(8-hydroxyquinoline)aluminum), TPBi (1,3,5-tris(1-phenyl-1H-benzo[d]2-imidazolyl)phenyl), BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), TAZ (3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4- Triazoles, NTAZ (4-(1-naphthyl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD (2-(4-bidiphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq (bis(2-methyl-8-quinolinyl-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum), Bebq2 (bis(benzoquinoline-10-hydroxy)beryllium), ADN (9,10-bis(2-naphthyl)anthracene), and mixtures thereof. It should be noted that the type of electron transport material is not specifically limited herein. The second stack ST2 may be disposed on the first charge-generating layer CGL1 and may further include a second hole transport layer HTL2, a second electron blocking layer BIL2, and a second electron transport layer ETL2.

[0188] A second hole transport layer HTL2 may be disposed on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from those listed above that may be included in the first hole transport layer HTL1. The second hole transport layer HTL2 may consist of a single layer or multiple layers.

[0189] The second electron blocking layer BIL2 may be disposed on the second hole transport layer HTL2 and may be located between the second hole transport layer HTL2 and the second emission material layer EML2. The second electron blocking layer BIL2 may be made of the same material as the first electron blocking layer BIL1 and have the same structure as the first electron blocking layer BIL1, or may include one or more materials selected from those listed above that may be included in the first electron blocking layer BIL1.

[0190] The second electron transport layer ETL2 may be disposed on the second emitter material layer EML2 and may be located between the second charge generation layer CGL2 and the second emitter material layer EML2. The second electron transport layer ETL2 may be made of the same material as the first electron transport layer ETL1 and have the same structure as the first electron transport layer ETL1, or may include one or more materials selected from those listed above that may be included in the first electron transport layer ETL1. The second electron transport layer ETL2 may consist of a single layer or multiple layers.

[0191] The second charge generation layer CGL2 can be disposed on the second stack ST2 and can be located between the second stack ST2 and the third stack ST3.

[0192] The second charge generation layer CGL2 may have the same structure as the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 positioned near the second stack ST2 and a p-type charge generation layer CGL22 positioned near the cathode electrode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0193] The second charge-generating layer CGL2 can have a junction structure located between the n-type charge-generating layer CGL21 and the p-type charge-generating layer CGL22. The first charge-generating layer CGL1 and the second charge-generating layer CGL2 can be made of different materials or can be made of the same material.

[0194] The third stack ST3 may be disposed on the second charge generation layer CGL2, and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0195] A third hole transport layer HTL3 may be disposed on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from those listed above that may be included in the first hole transport layer HTL1. The third hole transport layer HTL3 may consist of a single layer or multiple layers. When the third hole transport layer HTL3 consists of multiple layers, these layers may include different materials from each other.

[0196] The third electron transport layer ETL3 may be disposed on the third emitter material layer EML3 and may be located between the cathode electrode CE and the third emitter material layer EML3. The third electron transport layer ETL3 may be made of the same material as the first electron transport layer ETL1 and have the same structure as the first electron transport layer ETL1, or may include one or more materials selected from those listed above that may be included in the first electron transport layer ETL1. The third electron transport layer ETL3 may consist of a single layer or multiple layers. When the third electron transport layer ETL3 consists of multiple layers, these layers may include different materials from each other.

[0197] In one or more embodiments, a hole injection layer (not shown) may be further disposed between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3, between the second stack ST2 and the first charge generation layer CGL1 and / or between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer may facilitate hole injection into the first emitter layer EML1, the second emitter layer EML2 and the third emitter layer EML3. In some embodiments, the hole injection layer may be made of (but not limited to) at least one selected from the group consisting of CuPc (copper phthalocyanine), PEDOT (poly(3,4)-ethylenedioxythiophene), PANI (polyaniline) and NPD (N,N-dinaphthyl-N,N'-diphenylbenzidine). In some embodiments, the hole injection layer may be located between the first stack ST1 and the first anode electrode AE1, the second anode electrode AE2 and the third anode electrode AE3, between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0198] In one or more embodiments, an electron injection layer (not shown) may be further disposed between a third electron transport layer ETL3 and a cathode electrode CE, between a second charge generation layer CGL2 and a second stack ST2, and / or between a first charge generation layer CGL1 and a first stack ST1. The electron injection layer facilitates electron injection and may be made of (but not limited to) Alq3 (tris(8-hydroxyquinoline)aluminum), PBD, TAZ, spirocyclic-PBD, BAlq, or Salq. Alternatively, the electron injection layer may be a metal halide compound and may be (but not limited to) at least one selected from the group consisting of MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2. Additionally, the electron injection layer may include lanthanide materials (such as Yb, Sm, and Eu). Alternatively, the electron injection layer may include metal halide materials and lanthanide materials (such as RbI:Yb and KI:Yb). When the electron injection layer comprises both a metal halide material and a lanthanide material, the electron injection layer can be formed by co-depositing the metal halide material and the lanthanide material. In some embodiments, the electron injection layer may be located between the third electron transport layer ETL3 and the cathode electrode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0199] In addition to the structures described above, the structure of the emitter layer OL can be modified. For example, the emitter layer OL can be like... Figure 11 The emission layer OLa shown was modified in the same way. (Similar to...) Figure 10 The structures shown are different. Figure 11 The emission layer OLa shown may further include a fourth stack ST4 located between the third stack ST3 and the second stack ST2, and may further include a third charge generation layer CGL3 located between the third stack ST3 and the second stack ST2.

[0200] The fourth stack ST4 may include a fourth emission material layer EML4 and may further include a fourth hole transport layer HTL4, a third electron blocking layer BIL4 and a fourth electron transport layer ETL4.

[0201] The first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 included in the emitting layer OLa can all emit light of a first color (e.g., blue light). At least one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4, and at least another of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 can emit blue light in a different wavelength range.

[0202] Alternatively, at least one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 can emit green light, while at least another of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 can emit blue light. For example, one of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 can be a green emitting material layer, while the other three of the first emitting material layer EML1, the second emitting material layer EML2, the third emitting material layer EML3, and the fourth emitting material layer EML4 can be blue emitting material layers.

[0203] A fourth hole transport layer HTL4 may be disposed on the second charge generation layer CGL2. The fourth hole transport layer HTL4 may be made of the same material as the first hole transport layer HTL1, or may include one or more materials selected from those listed above that may be included in the first hole transport layer HTL1. The fourth hole transport layer HTL4 may consist of a single layer or multiple layers. When the fourth hole transport layer HTL4 is composed of multiple layers, these layers may include different materials from each other.

[0204] The third electron blocking layer BIL4 may be disposed on the fourth hole transport layer HTL4 and may be located between the fourth hole transport layer HTL4 and the fourth emitter material layer EML4. The third electron blocking layer BIL4 may be made of the same material as the first electron blocking layer BIL1 and have the same structure as the first electron blocking layer BIL1, or may include one or more materials selected from those listed above that may be included in the first electron blocking layer BIL1. In some other embodiments, the third electron blocking layer BIL4 may be omitted or removed.

[0205] A fourth electron transport layer (ETL4) may be disposed on a fourth emitter material layer (EML4) and may be located between a third charge generation layer (CGL3) and a fourth emitter material layer (EML4). The fourth electron transport layer (ETL4) may be made of the same material as the first electron transport layer (ETL1) and have the same structure as the first electron transport layer (ETL1), or may include one or more materials selected from those listed above that may be included in the first electron transport layer (ETL1). The fourth electron transport layer (ETL4) may consist of a single layer or multiple layers. When the fourth electron transport layer (ETL4) consists of multiple layers, these layers may include different materials from each other.

[0206] The third charge generation layer CGL3 may have the same structure as the first charge generation layer CGL1 described above. For example, the third charge generation layer CGL3 may include an n-type charge generation layer CGL31 positioned near the second stack ST2 and a p-type charge generation layer CGL32 positioned near the cathode electrode CE. The p-type charge generation layer CGL32 may be disposed on the n-type charge generation layer CGL31.

[0207] In one or more embodiments, an electron injection layer may be further disposed between the fourth stack ST4 and the third charge generation layer CGL3. Additionally, a hole injection layer may be further disposed between the fourth stack ST4 and the second charge generation layer CGL2.

[0208] In some embodiments, Figure 10 The emission layer OL shown in the figure Figure 11 The emitting layer OLa shown may not include a red light emitting layer, and therefore may not emit light of the first color (e.g., red light). That is, the emitted light LE may not include an optical component having a peak wavelength in the range of approximately 610 nm to approximately 650 nm, and the emitted light LE may include only an optical component having a peak wavelength in the range of approximately 440 nm to approximately 550 nm.

[0209] like Figure 12 As shown, the dam component DM can be placed in the second insulating layer 117 in the non-display area NDA.

[0210] The dam component DM can be located closer to the outside than the voltage supply line VSL. In other words, as... Figure 12 As shown, the voltage supply line VSL can be located between the dam component DM and the display area DA.

[0211] In some embodiments, a portion of the dam component DM may overlap with the voltage supply line VSL.

[0212] In some embodiments, the dam component DM may include multiple dams. For example, the dam component DM may include a first dam D1 and a second dam D2.

[0213] The first dam D1 may partially overlap with the voltage supply line VSL and may be spaced apart from the third insulation layer 130 (e.g., spaced apart), wherein the voltage supply line VSL is located between the first dam D1 and the third insulation layer 130. In some embodiments, the first dam D1 may include a first lower dam pattern D11 located on the second insulation layer 117 and a first upper dam pattern D12 located on the first lower dam pattern D11.

[0214] The second dam D2 may be located outside the first dam D1 and may be spaced apart from the first dam D1 (e.g., spaced apart). In some embodiments, the second dam D2 may include a second lower dam pattern D21 located on the second insulating layer 117 and a second upper dam pattern D22 located on the second lower dam pattern D21.

[0215] In some embodiments, the first lower dam pattern D11 and the second lower dam pattern D21 may be made of the same material as the material of the third insulating layer 130 and may be formed together with the third insulating layer 130 (e.g., formed simultaneously).

[0216] In some embodiments, the first dam pattern D12 and the second dam pattern D22 may be made of the same material as the pixel defining layer 150 and may be formed together with the pixel defining layer 150 (e.g., formed simultaneously).

[0217] In some embodiments, the height of the first dam D1 may differ from the height of the second dam D2. For example, the height of the second dam D2 may be greater than or higher than the height of the first dam D1. That is, the height of the dam included in the dam member DM may gradually increase away from the display area DA. Accordingly, organic matter spillage can be more effectively prevented during the process of forming the organic layer 173 included by the encapsulation layer 170, which will be described in more detail below.

[0218] like Figure 9 and Figure 12 As shown, the first capping layer 160 can be disposed on the cathode electrode CE. The first capping layer 160 can be configured to span the first emission region LA1, the second emission region LA2, the third emission region LA3, and the non-emission region NLA, thereby improving viewing angle characteristics and external coupling efficiency.

[0219] The first capping layer 160 may include inorganic and / or organic materials with light-transmitting properties. That is, the first capping layer 160 may be formed as an inorganic layer, or as an organic layer, or as an organic layer containing inorganic particles. For example, the first capping layer 160 may include a triamine derivative, a carbazole biphenyl derivative, an aryldiamine derivative, or an 8-hydroxyquinoline-aluminum complex (Alq3).

[0220] Alternatively, the first capping layer 160 may be made of a mixture of a high-refractive-index material and a low-refractive-index material. Alternatively, the first capping layer 160 may comprise two layers with different refractive indices, for example, a high-refractive-index layer and a low-refractive-index layer.

[0221] In some embodiments, the first capping layer 160 may cover (e.g., completely cover) the cathode electrode CE. In some embodiments, such as Figure 12 As shown, the end of the first capping layer 160 may be located closer to the outside than the end of the cathode electrode CE, and the end of the cathode electrode CE may be covered by the first capping layer 160 (e.g., completely covered).

[0222] Encapsulation layer 170 may be disposed on first capping layer 160. Encapsulation layer 170 protects elements (e.g., light-emitting diodes ED1, ED2, and ED3 located beneath encapsulation layer 170) from external substances (such as moisture). Encapsulation layer 170 is configured (e.g., commonly configured) to span a first emitting region LA1, a second emitting region LA2, a third emitting region LA3, and a non-emitting region NLA. In some embodiments, encapsulation layer 170 may cover (e.g., directly cover) cathode electrode CE. In some embodiments, the capping layer covering cathode electrode CE may be further disposed between encapsulation layer 170 and cathode electrode CE, in which case encapsulation layer 170 may cover (e.g., directly cover) capping layer. Encapsulation layer 170 may be a thin-film encapsulation layer.

[0223] In some embodiments, the encapsulation layer 170 may include a lower inorganic layer 171, an organic layer 173, and an upper inorganic layer 175 stacked (e.g., sequentially stacked) on the first capping layer 160.

[0224] In some embodiments, the lower inorganic layer 171 may cover the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 in the display area DA. The lower inorganic layer 171 may cover the dam member DM in the non-display area NDA and may extend to the outside of the dam member DM.

[0225] In some embodiments, the lower inorganic layer 171 may cover (e.g., completely cover) the first capping layer 160. In some embodiments, the end of the lower inorganic layer 171 may be located closer to the outside than the end of the first capping layer 160, and the end of the first capping layer 160 may be covered (e.g., completely cover) by the lower inorganic layer 171.

[0226] The lower inorganic layer 171 may include multiple layers stacked on top of each other. The structure of the lower inorganic layer 171 will be described in more detail below.

[0227] An organic layer 173 may be disposed above the lower inorganic layer 171. The organic layer 173 may cover the first light-emitting diode ED1, the second light-emitting diode ED2, and the third light-emitting diode ED3 in the display area DA. In some embodiments, a portion of the organic layer 173 may be located in the non-display area NDA, but may not be located outside the dam member DM. Although a portion of the organic layer 173 may be located closer to the interior (e.g., closer to the display area DA) than the first dam D1, this disclosure is not limited thereto. In some other embodiments, a portion of the organic layer 173 may be accommodated in the space between the first dam D1 and the second dam D2, and the end of the organic layer 173 may be located between the first dam D1 and the second dam D2.

[0228] An upper inorganic layer 175 may be disposed on an organic layer 173. The upper inorganic layer 175 may cover the organic layer 173. In some embodiments, the upper inorganic layer 175 may contact (e.g., directly contact) the lower inorganic layer 171 in the non-display area (NDA) to form an inorganic / inorganic junction. In some embodiments, the ends of the upper inorganic layer 175 and the ends of the lower inorganic layer 171 may be substantially aligned with each other. The upper inorganic layer 175 may comprise multiple layers stacked on top of each other. The structure of the upper inorganic layer 175 will be described in more detail below.

[0229] Each of the lower inorganic layer 171 and the upper inorganic layer 175 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0230] In some embodiments, the organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, ethylene resin, epoxy resin, polyurethane resin, cellulose resin or perylene resin.

[0231] In the following text, we will combine Figures 1 to 12 refer to Figures 13 to 17 The color conversion substrate 30 is described in more detail.

[0232] Figure 13This is a plan view showing the layout of a third color filter and a color pattern in a color conversion substrate of a display device according to an embodiment of the present disclosure. Figure 14 This is a plan view showing the layout of a light-blocking member in a color conversion substrate of a display device according to an embodiment of the present disclosure. Figure 15 This is a plan view schematically illustrating the layout of a first color filter in a color conversion substrate of a display device according to an embodiment of the present disclosure. Figure 16 This is a plan view schematically illustrating the layout of a second color filter in a color conversion substrate of a display device according to an embodiment of the present disclosure. Figure 17 This is a plan view showing the layout of the embankment pattern, the first wavelength conversion pattern, the second wavelength conversion pattern, and the light-transmitting pattern in the color conversion substrate of a display device according to an embodiment of the present disclosure.

[0233] Figure 9 and Figure 12 The second substrate 310 shown can be made of a light-transmitting material.

[0234] In some embodiments, the second substrate 310 may be a glass substrate or a plastic substrate. In some embodiments, the second substrate 310 may further include a separation layer (e.g., an insulating layer such as an inorganic film) disposed on the glass substrate or the plastic substrate.

[0235] In some embodiments, a plurality of light-transmitting areas TA1, TA2 and TA3 and a light-blocking area BA may be defined on a second substrate 310.

[0236] like Figure 9 and Figure 12 As shown, the third color filter 235 and the color pattern 250 can be located on the surface of the second substrate 310 facing the display substrate 10.

[0237] The third color filter 235 can be configured to overlap with the third emission zone LA3 or the third light transmission zone TA3.

[0238] The third color filter 235 can selectively transmit light of a third color (e.g., blue light) while blocking or absorbing light of a first color (e.g., red light) and a second color (e.g., green light). In some embodiments, the third color filter 235 may be a blue color filter and may include a blue colorant (such as a blue dye and a blue pigment). As used herein, a colorant includes dyes as well as pigments.

[0239] Color pattern 250 can be configured to overlap with the non-emitting area NLA or the light-blocking area BA. Alternatively, color pattern 250 can be further located within the non-display area NDA.

[0240] Color pattern 250 can absorb a portion of the external light introduced into display device 1 from the outside, thereby reducing reflected light caused by external light. A large amount of external light is reflected, causing color gamut distortion in display device 1. Conversely, according to embodiments of this disclosure, by providing color pattern 250 in the non-emitting area NLA and the non-display area NDA, color distortion caused by external light can be suppressed.

[0241] In some embodiments, color pattern 250 may include a blue colorant (such as a blue dye or blue pigment). In some embodiments, color pattern 250 may be made of the same material as the third color filter 235 and may be formed together with (e.g., simultaneously with) the third color filter 235 via a process for forming the third color filter 235. When color pattern 250 includes a blue colorant, external light or reflected light that has passed through color pattern 250 may be blue light. The color sensitivity perceived by a user's eye varies depending on the color of the light. More specifically, light in the blue wavelength band may be less sensitive to a user compared to light in the green and red wavelength bands. Therefore, because color pattern 250 includes a blue colorant, a user may perceive reflected light with relatively low sensitivity.

[0242] In some embodiments, such as Figure 13 As shown, the color pattern 250 can be set throughout the entire light-blocking area BA. Additionally, in some embodiments, such as... Figure 13 As shown, color pattern 250 can be connected to third color filter 235.

[0243] In some embodiments, the light-blocking pattern 260 may be located on the surface of the second substrate 310 facing the display substrate 10. The light-blocking pattern 260 may be configured to overlap with the light-blocking area BA to block light transmission. In some embodiments, such as Figure 14 As shown, the light-blocking pattern 260 can be set in a substantially grid-like form in a plan view or when viewed from above.

[0244] In some embodiments, the light-blocking pattern 260 may include an organic light-blocking material and may be formed via a process of coating and exposing the organic light-blocking material.

[0245] As previously mentioned, external light can cause color gamut distortion in the display device 1. Conversely, according to embodiments of this disclosure, by disposing a light-blocking pattern 260 under the second substrate 310, at least a portion of the external light is absorbed by the light-blocking pattern 260. By doing so, color distortion due to reflection of external light can be reduced. In some embodiments, the light-blocking pattern 260 can prevent or substantially prevent color mixing when light leaks between adjacent light-transmitting areas, thereby further improving the color gamut.

[0246] like Figure 9 and Figure 12 As shown, the light-blocking pattern 260 may be located on the color pattern 250. In other words, the light-blocking pattern 260 may be located on or at the opposite side of the second substrate 310, wherein the color pattern 250 is located between the light-blocking pattern 260 and the second substrate 310.

[0247] Since the color pattern 250 is located between the light-blocking pattern 260 and the second substrate 310, in some embodiments, the light-blocking pattern 260 may not be in contact with the second substrate 310.

[0248] In another embodiment, the light-blocking pattern 260 may be removed or omitted.

[0249] like Figure 9 As shown, the first color filter 231 and the second color filter 233 can be located on the surface of the second substrate 310 facing the display substrate 10.

[0250] The first color filter 231 can be configured to overlap with the first emission region LA1 or the first light transmission region TA1, and the second color filter 233 can be configured to overlap with the second emission region LA2 or the second light transmission region TA2.

[0251] In some embodiments, the first color filter 231 can block or absorb light of a third color (e.g., blue light). That is, the first color filter 231 can function as a blue light filter for blocking or substantially blocking blue light, or serve as a blue light filter for blocking or substantially blocking blue light. In some embodiments, the first color filter 231 can selectively transmit light of a first color (e.g., red light) while blocking or absorbing light of a third color (e.g., blue light) and light of a second color (e.g., green light). For example, the first color filter 231 can be a red color filter and can include a red colorant.

[0252] The second color filter 233 can block or absorb light of a third color (e.g., blue light). That is, the second color filter 233 can also be used as a blue light blocking filter. In some embodiments, the second color filter 233 can selectively transmit light of a second color (e.g., green light) while blocking or absorbing light of a third color (e.g., blue light) and light of a first color (e.g., red light). For example, the second color filter 233 can be a green color filter and can include a green colorant.

[0253] like Figure 9 and Figure 15 As shown, in some embodiments, a portion of the first color filter 231 may be located within the light-blocking area BA, and as... Figure 9 and Figure 16 As shown, a portion of the second color filter 233 may also be located within the light-blocking area BA.

[0254] In some embodiments, a portion of the first color filter 231 may be located at a portion of the light-blocking area BA between the first light-transmitting area TA1 and the second light-transmitting area TA2, and at a portion of the light-blocking area BA between the first light-transmitting area TA1 and the third light-transmitting area TA3.

[0255] In some embodiments, a portion of the second color filter 233 may be located at a portion of the light-blocking area BA between the first light-transmitting area TA1 and the second light-transmitting area TA2, and at a portion of the light-blocking area BA between the second light-transmitting area TA2 and the third light-transmitting area TA3.

[0256] Although the first color filter 231 and the second color filter 233 do not overlap in the accompanying drawings, they can overlap in the light-blocking area BA between the first light-transmitting area TA1 and the second light-transmitting area TA2. The portions of the first color filter 231 and the second color filter 233 that overlap in the light-blocking area BA can serve as light-blocking components or function as light-blocking components that block light transmission.

[0257] Alternatively, according to another embodiment, the first color filter 231 and the second color filter 233 may be positioned throughout the entire light-blocking area BA, and the first color filter 231 and the second color filter 233 may overlap each other throughout the entire light-blocking area BA.

[0258] In some embodiments, the first color filter 231 and the second color filter 233 may overlap with the color pattern 250 in the light-blocking area BA. For example, the color pattern 250 may overlap with the first color filter 231 and the second color filter 233 in a portion of the light-blocking area BA between the first light-transmitting area TA1 and the second light-transmitting area TA2. Additionally, the color pattern 250 may overlap with the second color filter 233 in the light-blocking area BA between the second light-transmitting area TA2 and the third light-transmitting area TA3. Furthermore, the color pattern 250 may overlap with the first color filter 231 in the light-blocking area BA between the third light-transmitting area TA3 and the first light-transmitting area TA1.

[0259] The portions of the first color filter 231 and color pattern 250 that overlap with each other in the light-blocking area BA, as well as the portions of the second color filter 233 and color pattern 250 that overlap with each other in the light-blocking area BA, can serve as light-blocking components or function as light-blocking components. The portions of the first color filter 231 and color pattern 250 that overlap with each other in the light-blocking area BA, as well as the portions of the second color filter 233 and color pattern 250 that overlap with each other in the light-blocking area BA, can absorb at least a portion of external light to reduce color distortion caused by reflection of external light. Furthermore, it can prevent or substantially prevent light emitted to the outside from entering adjacent emission areas or passing through adjacent emission areas to cause color mixing, and thus can further improve the color gamut of the display device 1.

[0260] In some embodiments, at least one of the first color filter 231 and the second color filter 233 may be further located in the non-display area NDA. For example, as Figure 12 As shown, the first color filter 231 may be further located in the non-display area NDA and may overlap with the color pattern 250 in the non-display area NDA. The overlapping color pattern 250 and the first color filter 231 may serve as light-blocking components in the non-display area NDA or act as light-blocking components in the non-display area NDA. When the light-blocking pattern 260 is removed or omitted, the first color filter 231 may be located (e.g., directly on) the color pattern 250 in the non-display area NDA.

[0261] like Figure 9 and Figure 12 As shown, the second capping layer 391 may be located on one surface of the second substrate 310 and covers the light-blocking pattern 260, the color pattern 250, the first color filter 231, the second color filter 233, and the third color filter 235. In some embodiments, the second capping layer 391 may contact (e.g., directly contact) the first color filter 231, the second color filter 233, and the third color filter 235. Additionally, in some embodiments, the second capping layer 391 may contact (e.g., directly contact) the light-blocking pattern 260.

[0262] The second capping layer 391 can prevent or substantially prevent the light-blocking pattern 260, color pattern 250, first color filter 231, second color filter 233, and third color filter 235 from being damaged or contaminated by externally introduced impurities (such as moisture and air). Additionally, the second capping layer 391 can prevent or substantially prevent the colorants contained in the first color filter 231, second color filter 233, and third color filter 235 from dispersing into other elements (e.g., the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, etc.). In some embodiments, the second capping layer 391 can be made of an inorganic material. For example, the second capping layer 391 can be made of materials including silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc.

[0263] In some embodiments, the second capping layer 391 may cover the side surfaces of the color pattern 250, the light-blocking pattern 260, and the first color filter 231 in the non-display area NDA. Additionally, in some embodiments, the second capping layer 391 may contact (e.g., directly contact) the second substrate 310 in the non-display area NDA.

[0264] The dam pattern 370 may be disposed on the surface of the second cover layer 391 facing the display substrate 10. In some embodiments, the dam pattern 370 may be located (e.g., directly located) on the surface of the second cover layer 391 and may be in contact with the second cover layer 391 (e.g., in direct contact).

[0265] In some embodiments, the embankment pattern 370 may be configured to overlap with the non-emitting region (NLA) or the light-blocking region (BA). In some embodiments, the embankment pattern 370 may be in a plan view or when viewed from above, as shown in the diagram. Figure 17 The diagram shows the first light-transmitting area TA1, the second light-transmitting area TA2, and the third light-transmitting area TA3. The embankment pattern 370 can define a space in which each of the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 is disposed. For example, the embankment pattern 370 can surround each of the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330.

[0266] In some embodiments, the dike pattern 370 can be implemented as follows: Figure 17 The diagram shows a single pattern for a single piece, but this disclosure is not limited thereto. According to another embodiment, the portion of the embankment pattern 370 surrounding the first light-transmitting area TA1, the portion of the embankment pattern 370 surrounding the second light-transmitting area TA2, and the portion of the embankment pattern 370 surrounding the third light-transmitting area TA3 can be formed as separate patterns that are spaced apart from each other (e.g., spaced apart).

[0267] When the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 are formed by jetting the ink composition using a nozzle or the like (i.e., by inkjet printing), the embankment pattern 370 can serve as a guide or act as a guide to stably place the jetted ink composition at a desired or suitable position. In other words, the embankment pattern 370 can serve as a barrier or act as a barrier.

[0268] In some embodiments, the embankment pattern 370 may overlap with the pixel-defining layer 150.

[0269] like Figure 12 As shown, in some embodiments, the embankment pattern 370 may be further located in the non-display area NDA. The embankment pattern 370 may overlap with the color pattern 250 and the first color filter 231 in the non-display area NDA.

[0270] In some embodiments, the dam pattern 370 may include a photocurable organic material. Additionally, in some embodiments, the dam pattern 370 may include a photocurable organic material and contain a light-blocking material. When the dam pattern 370 has light-blocking properties, it can prevent or substantially prevent light from entering or passing through adjacent emitting regions in the display area DA. For example, the dam pattern 370 can prevent or substantially prevent emitted light LE from the second light-emitting diode ED2 from entering the first wavelength conversion pattern 340 overlapping the first emitting region LA1. Furthermore, the dam pattern 370 can block or suppress external light from entering elements disposed beneath the dam pattern 370 in the non-emitting region NLA and the non-display region NDA.

[0271] like Figure 9 and Figure 12 As shown, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located on the second cover layer 391. In some embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located in the display area DA.

[0272] The light-transmitting pattern 330 may overlap with the third emitting region LA3 or the third light-emitting diode ED3. The light-transmitting pattern 330 may be located in the space defined by the embankment pattern 370 in the third light-transmitting region TA3.

[0273] In some embodiments, the light-transmitting pattern 330 can be formed as follows: Figure 17 The island pattern shown is illustrated. Although the light-transmitting pattern 330 does not overlap with the light-blocking area BA in the figures, this is merely exemplary. In some other embodiments, a portion of the light-transmitting pattern 330 may overlap with the light-blocking area BA.

[0274] The light-transmitting pattern 330 can transmit incident light. In other words, light incident on the light-transmitting pattern 330 can pass through it. As described above, the emitted light LE provided by the third light-emitting diode ED3 can be blue light. The blue emitted light LE passes through the light-transmitting pattern 330 and the third color filter 235 and exits to the outside of the display device 1. That is, the third light LO3 emitted from the third emission area LA3 to the outside of the display device 1 can be blue light.

[0275] In some embodiments, the light-transmitting pattern 330 may further include a first base resin 331 and may further include a first scatterer 333 dispersed in the first base resin 331.

[0276] The first substrate resin 331 may be made of a material with high light transmittance. In some embodiments, the first substrate resin 331 may be made of an organic material. For example, the first substrate resin 331 may include organic materials such as epoxy resin, acrylic resin, calorie resin, or imide resin.

[0277] The first scatterer 333 may have a refractive index different from that of the first substrate resin 331 and may form an optical interface with the first substrate resin 331. For example, the first scatterer 333 may be a light-scattering particle. The material of the first scatterer 333 is not specifically limited; for example, any suitable material may be used for the first scatterer 333, as long as the first scatterer 333 is capable of scattering at least a portion of the transmitted light. For example, the first scatterer 333 may be a metal oxide particle or an organic particle. Examples of metal oxides may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), etc. Examples of materials for organic particles may include acrylic resin, polyurethane resin, etc. The first scatterer 333 may scatter light in random directions regardless of the direction in which the incident light enters, without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 330.

[0278] In some embodiments, the light-transmitting pattern 330 may contact (e.g., directly contact) the second capping layer 391 and the dam pattern 370.

[0279] The first wavelength conversion pattern 340 may be located on the second capping layer 391 and may overlap with the first emitting region LA1, the first light-emitting diode ED1, or the first light-transmitting region TA1.

[0280] In some embodiments, the first wavelength conversion pattern 340 may be located in the space defined by the embankment pattern 370 in the first light-transmitting region TA1.

[0281] In some embodiments, the first wavelength conversion pattern 340 can be formed as follows: Figure 17 The island pattern shown is illustrated. Although the first wavelength conversion pattern 340 does not overlap with the light-blocking area BA in the figures, this disclosure is not limited thereto. In some other embodiments, a portion of the first wavelength conversion pattern 340 may overlap with the light-blocking area BA.

[0282] In some embodiments, the first wavelength conversion pattern 340 may contact (e.g., directly contact) the second capping layer 391 and the dam pattern 370.

[0283] The first wavelength conversion pattern 340 can convert or shift the peak wavelength of the incident light to another peak wavelength. In some embodiments, the first wavelength conversion pattern 340 can convert the emitted light LE provided from the first light-emitting diode ED1 into red light having a peak wavelength in the range of approximately 610 nm to approximately 650 nm.

[0284] In some embodiments, the first wavelength conversion pattern 340 may include a second substrate resin 341 and a first wavelength shifter 345 dispersed in the second substrate resin 341, and may further include a second scatterer 343 dispersed in the second substrate resin 341.

[0285] The second base resin 341 may be made of a material with high light transmittance. In some embodiments, the second base resin 341 may be made of an organic material. In some embodiments, the second base resin 341 may be made of the same material as the first base resin 331, or may include at least one of the materials listed above as examples of constituent materials of the first base resin 331.

[0286] The first wavelength shifter 345 can convert or shift the peak wavelength of the incident light to another peak wavelength. In some embodiments, the first wavelength shifter 345 can convert the emitted light LE of a third color (which is blue light provided from the first light-emitting diode ED1) into red light having a single peak wavelength in the range of approximately 610 nm to approximately 650 nm.

[0287] Examples of the first wavelength shifter 345 may include quantum dots, quantum rods, or phosphors. For example, a quantum dot may be a particulate material that emits color when an electron transitions from the conduction band to the valence band.

[0288] Quantum dots can be semiconductor nanocrystal materials. Quantum dots have specific band gaps depending on their composition and size, and can absorb light and emit light with intrinsic wavelengths. Examples of semiconductor nanocrystals containing quantum dots can include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, or combinations thereof.

[0289] Group II-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; and compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, and CdZnSe. Ternary compounds selected from the group consisting of CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0290] III-V group compounds may be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, GaAlNP and mixtures thereof.

[0291] Group IV-VI compounds can be selected from the following groups: binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements can be selected from the group consisting of Si, Ge, and mixtures thereof. Group IV compounds can be binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0292] Binary, ternary, or quaternary compounds can exist in particles at a homogeneous or substantially homogeneous concentration, or they can exist in the same particles at partially different concentrations. Furthermore, they can have a core / shell structure in which one quantum dot surrounds another. At the interface between the core and shell, the concentration gradient of atoms in the shell can decrease towards the center.

[0293] In some embodiments, quantum dots may have a core-shell structure comprising a core containing nanocrystals and a shell surrounding the core. The shell of the quantum dot may serve as a charging layer for imparting electrophoretic properties to the quantum dot and / or as a protective layer for maintaining semiconductor properties by preventing or reducing chemical denaturation of the core. The shell may be single-layered or multi-layered. At the interface between the core and the shell, the concentration gradient of atoms in the shell may decrease towards the center. Examples of shells for quantum dots may include oxides of metals or non-metals, semiconductor compounds, combinations thereof, etc.

[0294] Examples of metal or nonmetal oxides may include (but are not limited to) binary compounds (such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO) or ternary compounds (such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4).

[0295] Examples of semiconductor compounds may include (but are not limited to) CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc.

[0296] The light emitted from the first wavelength shifter 345 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of approximately 45 nm or less, approximately 40 nm or less, or approximately 30 nm or less. In this way, the color purity and color gamut of the colors displayed by the display device 1 can be further improved. Furthermore, the light emitted from the first wavelength shifter 345 can propagate in different directions regardless of the incident direction of the incident light. In this way, the lateral visibility of the first color displayed in the first light-transmitting area TA1 can be improved.

[0297] A portion of the emitted light LE from the first light-emitting diode ED1 may pass through the first wavelength conversion pattern 340 without being converted to red light by the first wavelength shifter 345. The component of the emitted light LE that is not converted by the first wavelength conversion pattern 340 but incident on the first color filter 231 may be blocked by the first color filter 231. On the other hand, the red light converted from the emitted light LE by the first wavelength conversion pattern 340 passes through the first color filter 231 and is emitted to the outside. In other words, the first light LO1 emitted to the outside of the display device 1 through the first light-transmitting region TA1 may be red light.

[0298] The second scatterer 343 may have a refractive index different from that of the second substrate resin 341 and may form an optical interface with the second substrate resin 341. For example, the second scatterer 343 may be a light scattering particle. The second scatterer 343 is substantially the same as the first scatterer 333 described above; and therefore, redundant descriptions are unnecessary.

[0299] The second wavelength conversion pattern 350 can be located in the space defined by the embankment pattern 370 in the second light-transmitting area TA2.

[0300] In some embodiments, the second wavelength conversion pattern 350 can be formed as follows: Figure 17 The island pattern shown in the figures. In some other embodiments, unlike those shown in the figures, a portion of the second wavelength conversion pattern 350 may overlap with the light-blocking region BA.

[0301] In some embodiments, the second wavelength conversion pattern 350 may contact (e.g., directly contact) the second capping layer 391 and the dam pattern 370.

[0302] The second wavelength conversion pattern 350 can convert or shift the peak wavelength of the incident light to another peak wavelength and emit light of that other peak wavelength. In some embodiments, the second wavelength conversion pattern 350 can convert the emitted light LE provided from the second light-emitting diode ED2 into green light in the range of approximately 510 nm to approximately 550 nm.

[0303] In some embodiments, the second wavelength conversion pattern 350 may include a third substrate resin 351 and a second wavelength shifter 355 dispersed in the third substrate resin 351, and may further include a third scatterer 353 dispersed in the third substrate resin 351.

[0304] The third base resin 351 may be made of a material with high light transmittance. In some embodiments, the third base resin 351 may be made of an organic material. In some embodiments, the third base resin 351 may be made of the same material as the first base resin 331, or may include at least one of the materials listed above as examples of constituent materials of the first base resin 331.

[0305] The second wavelength shifter 355 can convert or shift the peak wavelength of the incident light to another peak wavelength. In some embodiments, the second wavelength shifter 355 can convert blue light having a peak wavelength in the range of approximately 440 nm to approximately 480 nm into green light having a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0306] Examples of the second wavelength shifter 355 may include quantum dots, quantum rods, or phosphors. The second wavelength shifter 355 is substantially the same as the first wavelength shifter 345; and therefore, redundant descriptions are unnecessary.

[0307] In some embodiments, the first wavelength shifter 345 and the second wavelength shifter 355 may be entirely composed of quantum dots. In this case, the particle size of the quantum dots forming the second wavelength shifter 355 may be smaller than the particle size of the quantum dots forming the first wavelength shifter 345.

[0308] The third scatterer 353 may have a refractive index different from that of the third substrate resin 351 and may form an optical interface with the third substrate resin 351. For example, the third scatterer 353 may be a light scattering particle. The third scatterer 353 is substantially the same as the second scatterer 343 described above; and therefore, redundant descriptions are unnecessary.

[0309] The emitted light LE from the second light-emitting diode ED2 can be supplied to a second wavelength conversion pattern 350. The second wavelength shifter 355 can convert the emitted light LE from the second light-emitting diode ED2 into green light with a peak wavelength in the range of approximately 510 nm to approximately 550 nm.

[0310] A portion of the blue emitted light LE can pass through the second wavelength conversion pattern 350 without being converted into green light by the second wavelength shifter 355; this portion can be blocked by the second color filter 223. On the other hand, the green light converted from the emitted light LE by the second wavelength conversion pattern 350 passes through the second color filter 233 and is emitted to the outside. Correspondingly, the second light LO2 emitted from the second light-transmitting area TA2 to the outside of the display device 1 can be green light.

[0311] The third capping layer 393 may be located on the embankment pattern 370, the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The third capping layer 393 may cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. In some embodiments, the third capping layer 393 may also be located in the non-display area NDA. The third capping layer 393 may be located in the non-display area NDA (e.g., see...). Figure 1 The light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 are in contact with the second capping layer 391 (e.g., in direct contact) and can seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Therefore, it is possible to prevent or substantially prevent impurities (such as moisture and air) from penetrating from the outside to damage or contaminate the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0312] In some embodiments, the third capping layer 393 may cover the outer surface of the embankment pattern 370 in the non-display area NDA. Additionally, the third capping layer 393 may contact (e.g., directly contact) the second capping layer 391 in the non-display area NDA.

[0313] In some embodiments, the third capping layer 393 may be made of an inorganic material. In some embodiments, the third capping layer 393 may be made of the same material as the second capping layer 391, or may include at least one of the materials listed above that may be included in the second capping layer 391. When both the second capping layer 391 and the third capping layer 393 are made of inorganic materials, in the non-display area NDA, the second capping layer 391 and the third capping layer 393 may contact each other (e.g., in direct contact) to form an inorganic / inorganic junction.

[0314] As described above, in the non-display area NDA, the sealing member 50 can be located between the color conversion substrate 30 and the display substrate 10.

[0315] The sealing member 50 may overlap with the encapsulation layer 170. More specifically, the sealing member 50 may overlap with the lower inorganic layer 171 and the upper inorganic layer 175 and may not overlap with the organic layer 173. In some embodiments, the sealing member 50 may contact (e.g., directly contact) the encapsulation layer 170. More specifically, the sealing member 50 may be located (e.g., directly located) on the upper inorganic layer 175 and may contact (e.g., directly contact) the upper inorganic layer 175.

[0316] In some embodiments, the upper inorganic layer 175 and the lower inorganic layer 171 disposed below the sealing member 50 may extend to the outside of the sealing member 50. The ends of the upper inorganic layer 175 and the lower inorganic layer 171 may be located between the sealing member 50 and a first portion of the first support member and between the sealing member 50 and a second portion of the first support member.

[0317] The sealing member 50 may overlap with the color pattern 250, the first color filter 231, and the dam pattern 370 in the non-display area NDA. In some embodiments, the sealing member 50 may contact (e.g., directly contact) the third capping layer 393 covering the dam pattern 370.

[0318] The sealing member 50 may overlap with the first gate metal WR1, which includes a line connected to the connection pad PD. Because the sealing member 50 is configured to overlap with the first gate metal WR1, the width of the non-display area NDA can be reduced.

[0319] As described above, the filler 70 can be located in the space defined by the color conversion substrate 30, the display substrate 10, and the sealing member 50. In some embodiments, such as Figure 9 and Figure 12 As shown, the filler 70 can contact the third capping layer 393 and the upper inorganic layer 175 of the encapsulation layer 170.

[0320] The structure of the above-mentioned encapsulation layer 170 will be described in more detail below.

[0321] Figure 18 yes Figure 9 Enlarged cross-sectional view of region Q9. Figure 19 yes Figure 18 Enlarged cross-sectional view of region Q11. Figure 20 yes Figure 18 Enlarged cross-sectional view of region Q13.

[0322] refer to Figures 18 to 20 The encapsulation layer 170 may be disposed between the first capping layer 160 and the filler 70. As described above, the encapsulation layer 170 may include a lower inorganic layer 171 located on the first capping layer 160, an organic layer 173 located on the lower inorganic layer 171, and an upper inorganic layer 175 located on the organic layer 173.

[0323] The lower inorganic layer 171 may include multiple layers stacked on top of each other, such as Figure 19 As shown in the figure. According to an embodiment of the present disclosure, the lower inorganic layer 171 may include a first buffer layer BF1, a first barrier layer BR1 located on the first buffer layer BF1, a first porous layer PL located on the first barrier layer BR1, a second barrier layer BR2 located on the first porous layer PL, and a second buffer layer BF2 located on the second barrier layer BR2.

[0324] The first barrier layer BR1 can be disposed between the first buffer layer BF1 and the first porous layer PL, the second barrier layer BR2 can be disposed between the first porous layer PL and the second buffer layer BF2, and the second buffer layer BF2 can be disposed between the second barrier layer BR2 and the organic layer 173.

[0325] In addition, the first barrier layer BR1 and the second barrier layer BR2 may, for example, comprise the same material, have the same thickness, and have the same refractive index.

[0326] However, it should be understood that this disclosure is not limited thereto. The first barrier layer BR1 and the second barrier layer BR2 may comprise different materials, may have different thicknesses, and may have different refractive indices from each other.

[0327] In the following description, it is assumed that the first barrier layer BR1 and the second barrier layer BR2 consist of the same material, have the same thickness, and have the same refractive index.

[0328] Each of the multiple layers of the lower inorganic layer 171, which will be described in more detail below, can have a light absorption efficiency (k) of zero. More specifically, if the light absorption efficiency (k) of each of the multiple layers of the lower inorganic layer 171 is greater than zero, some of the light generated from the light-emitting element below it can be absorbed by the multiple layers of the lower inorganic layer 171. This can reduce the overall light efficiency of the display device 1.

[0329] The first buffer layer BF1 may be disposed on (e.g., directly disposed on) the first capping layer 160. The first buffer layer BF1 may be in contact with (e.g., directly contact) the first barrier layer BR1 thereon.

[0330] The first buffer layer BF1 can be disposed on (e.g., directly disposed on) the first cover layer 160 and can be used to block or substantially block physical damage to the first cover layer 160.

[0331] For example, the first buffer layer BF1 can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0332] The thickness t1 of the first buffer layer BF1 can be in the range of approximately 1 nm to approximately 1000 nm. According to embodiments of this disclosure, the refractive index of the first buffer layer BF1 can be in the range of approximately 1.3 to approximately 1.75. For example, the refractive index of the first buffer layer BF1 can be approximately 1.6. The compressive stress of the first buffer layer BF1 can be in the range of approximately 0 to approximately 200 MPa.

[0333] The first barrier layer BR1 can be disposed on (e.g., directly disposed on) the first buffer layer BF1 to prevent moisture and / or oxygen from intruding from the outside.

[0334] For example, the first barrier layer BR1 can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0335] The thickness t2 of the first barrier layer BR1 can be in the range of approximately 1 nm to approximately 5000 nm. According to embodiments of this disclosure, the refractive index of the first barrier layer BR1 can be greater than the refractive index of the first buffer layer BF1 described above. According to embodiments of this disclosure, the refractive index of the first barrier layer BR1 can be in the range of approximately 1.45 to approximately 1.85. For example, the refractive index of the first barrier layer BR1 can be approximately 1.7. The compressive stress of the first barrier layer BR1 can be in the range of approximately 0 to approximately 200 MPa.

[0336] The first porous layer PL can be disposed between the first barrier layer BR1 and the second barrier layer BR2, and thus it can store a portion of the moisture and / or oxygen introduced into the second barrier layer BR2 that has not been completely absorbed by the second barrier layer BR2, as will be described in more detail below. For this purpose, it is desirable that the structure of the material in the first porous layer PL is somewhat non-uniform. To this end, in the process of forming the first porous layer PL on the first barrier layer BR1, the process time can be increased or additional processes such as introducing external air can be considered to reduce film uniformity. The method for forming the first porous layer PL can be any suitable method known in the art, and therefore will not be described in detail. The refractive index of the first porous layer PL with low film uniformity can be lower than the refractive indices of the buffer layers BF1 and BF2 and the adjacent barrier layers BR1 and BR2.

[0337] For example, the refractive index of the first porous layer PL can be approximately 0.3 lower than that of the adjacent barrier layers BR1 and BR2. For example, the refractive index of the first porous layer PL can vary from approximately 1.1 to approximately 1.45.

[0338] For example, the first porous layer PL can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

[0339] The thickness t3 of the first porous layer PL can be in the range of approximately 1 nm to approximately 1000 nm.

[0340] The second barrier layer BR2 can be disposed on the first porous layer PL. The material, thickness t4, and refractive index of the second barrier layer BR2 are substantially the same as those of the first barrier layer BR1 described above; and therefore, redundant descriptions are unnecessary.

[0341] The second buffer layer BF2 can be disposed between the second barrier layer BR2 and the organic layer 173. The thickness t5 and material of the second buffer layer BF2 can be the same as the thickness t1 and material of the first buffer layer BF1, respectively. However, it should be understood that this disclosure is not limited thereto.

[0342] As described above, organic layer 173 is disposed on second buffer layer BF2. In the process of forming organic layer 173, it is desirable that organic layer 173 is uniformly diffused and deposited on the surface of second buffer layer BF2. If organic layer 173 is not uniformly diffused and deposited on the surface of second buffer layer BF2, additional processes for diffusing organic layer 173 may have to be performed. If deposition is completed due to non-uniform diffusion of organic layer 173, organic layer 173 may not be deposited at some locations, or organic layer 173 may be deposited too much at some locations and too little at others. As a result, encapsulation layer 170 may typically be corrugated (e.g., typically has a corrugated surface). To prevent or substantially prevent this, it is desirable that the second buffer layer BF2 and organic layer 173 be made of the same material or materials with similar properties between organic and inorganic materials. However, because the second buffer layer BF2 and organic layer 173 have different functions, it may be difficult to conceive of such a desirable situation. In view of this, in the encapsulation layer 170 according to an embodiment of the present disclosure, the surface energy of the second buffer layer BF2 in contact with the organic layer 173 is higher than an appropriate or suitable level, such that the organic layer 173 can be uniformly diffused on the surface of the second buffer layer BF2. According to an embodiment of the present disclosure, the surface energy of the second buffer layer BF2 can be in the range of approximately 40 mN / m to approximately 80 mN / m. To obtain such a surface energy of the second buffer layer BF2, it is conceivable to form the second buffer layer BF2 with a material having high surface energy. However, given the function and material cost of the second buffer layer BF2, it may be desirable to adjust the surface roughness of the second buffer layer BF2. According to an embodiment of the present disclosure, the surface roughness of the second buffer layer BF2 can be approximately 5 nm to approximately 100 nm.

[0343] like Figure 20 As shown, the upper inorganic layer 175 may include multiple layers stacked on top of each other. According to an embodiment of this disclosure, the upper inorganic layer 175 may include a third buffer layer BF3 and a third barrier layer BR3 located on the third buffer layer BF3.

[0344] The third buffer layer BF3 can be disposed between the organic layer 173 and the third barrier layer BR3, and the third barrier layer BR3 can be disposed between the third buffer layer BF3 and the filler 70. The third buffer layer BF3 can contact (e.g., in direct contact) the adjacent organic layer 173 and the third barrier layer BR3, and the third barrier layer BR3 can contact (e.g., in direct contact) the adjacent third buffer layer BF3 and the filler 70.

[0345] For example, the material, thickness t6, refractive index, and compressive stress of the third buffer layer BF3 are substantially the same as those of the first buffer layer BF1. The third buffer layer BF3 can reduce the outgassing from the underlying organic layer 173.

[0346] The material and thickness t7 of the third barrier layer BR3 can be substantially the same as those of the first barrier layer BR1 and thickness t2. The third barrier layer BR3 can block or substantially block the intrusion of moisture and / or oxygen from the outside.

[0347] According to embodiments of this disclosure, the display device 1 employs a sandwich structure (i.e., a first porous layer PL is located between barrier layers BR1 and BR2 of the lower inorganic layer 171). Accordingly, the first porous layer PL can store a portion of moisture and / or oxygen introduced into the second barrier layer BR2 but not completely absorbed by it. In this way, moisture and / or oxygen intrusion into the encapsulation layer 170 can be prevented or substantially prevented, allowing for more reliable storage of the display device 1 and improving its lifespan.

[0348] In the following description, display devices according to other embodiments of the present disclosure will be described in more detail. In the following description, the same or similar elements will be indicated by the same or similar reference numerals, and redundant descriptions may be omitted or only briefly described.

[0349] Figure 21 It shows the basis Figure 20 A cross-sectional view of a variant of the encapsulation layer in an embodiment.

[0350] according to Figure 21 The encapsulation layer 170_1 of the embodiment differs from the encapsulation layer 170 according to the above embodiment in that the upper inorganic layer 175_1 of the encapsulation layer 170_1 further includes a fourth buffer layer BF4.

[0351] More specifically, the upper inorganic layer 175_1 of the encapsulation layer 170_1 according to the illustrated embodiment may further include a fourth buffer layer BF4.

[0352] The fourth buffer layer BF4 of the upper inorganic layer 175_1 can be disposed between the third barrier layer BR3 and the filler 70, and can be in contact with the third barrier layer BR3 and the filler 70 (e.g., in direct contact).

[0353] The material, refractive index, and thickness t8 of the fourth buffer layer BF4 can be basically the same as those of the third buffer layer BF3.

[0354] As described above, filler 70 is disposed on the fourth buffer layer BF4. In the process of forming filler 70, it is desirable that filler 70 is uniformly diffused and deposited on the surface of the fourth buffer layer BF4. If filler 70 is not uniformly diffused and deposited on the surface of the fourth buffer layer BF4, additional processes for dispersing filler 70 may have to be performed. If deposition is completed due to non-uniform diffusion of filler 70, filler 70 may not be deposited at some locations, or filler 70 may be deposited too much at some locations and too little at others. As a result, filler 70 may typically be wavy (e.g., typically has a wavy surface). To prevent or substantially prevent this, it is desirable that the fourth buffer layer BF4 and filler 70 be made of the same material or materials with similar properties between organic and inorganic materials. However, because the fourth buffer layer BF4 and filler 70 have different functions, it may be difficult to conceive of such a desirable situation. In view of this, in the encapsulation layer 170_1 according to an embodiment of the present disclosure, the surface energy of the fourth buffer layer BF4 in contact with the filler 70 is higher than an appropriate or suitable level, such that the filler 70 can be uniformly diffused on the surface of the fourth buffer layer BF4. According to an embodiment of the present disclosure, the surface energy of the fourth buffer layer BF4 can be in the range of approximately 40 mN / m to approximately 80 mN / m. To obtain such a surface energy of the fourth buffer layer BF4, it is conceivable to form the fourth buffer layer BF4 with a material having high surface energy. However, given the function and material cost of the fourth buffer layer BF4, it may be desirable to adjust the surface roughness of the fourth buffer layer BF4. According to an embodiment of the present disclosure, the surface roughness of the fourth buffer layer BF4 can be approximately 5 nm to approximately 100 nm.

[0355] Figure 22 and Figure 23 It shows the basis Figure 18 A cross-sectional view of a variant of the encapsulation layer in an embodiment.

[0356] according to Figure 22 and Figure 23 The encapsulation layer 170_2 of the embodiment differs from the encapsulation layer 170 of the above embodiment in that the encapsulation layer 170_2 includes a lower inorganic layer 171_1 and an upper inorganic layer 175_2.

[0357] More specifically, the encapsulation layer 170_2 according to the illustrated embodiment may include a lower inorganic layer 171_1 and an upper inorganic layer 175_2.

[0358] and Figure 19Compared to the lower inorganic layer 171, the lower inorganic layer 171_1 may only include a first buffer layer BF1, a first barrier layer BR1, and a second buffer layer BF2. The first buffer layer BF1 may be disposed between the first capping layer 160 and the first barrier layer BR1, the first barrier layer BR1 may be disposed between the first buffer layer BF1 and the second buffer layer BF2, and the second buffer layer BF2 may be disposed between the first barrier layer BR1 and the organic layer 173. The first buffer layer BF1, the first barrier layer BR1, and the second buffer layer BF2 have already been described above; therefore, redundant descriptions are unnecessary.

[0359] like Figure 23 As shown, the upper inorganic layer 175_2 according to the illustrated embodiment may include a third buffer layer BF3, a third barrier layer BR3, a second porous layer PL_1, a fourth barrier layer BR4, and a fourth buffer layer BF4. The third buffer layer BF3 may be disposed between the third barrier layer BR3 and the organic layer 173; the third barrier layer BR3 may be disposed between the third buffer layer BF3 and the second porous layer PL_1; the second porous layer PL_1 may be disposed between the third barrier layer BR3 and the fourth barrier layer BR4; the fourth barrier layer BR4 may be disposed between the fourth buffer layer BF4 and the second porous layer PL_1; and the fourth buffer layer BF4 may be disposed between the fourth barrier layer BR4 and the filler 70.

[0360] The above has been referenced Figure 21 The third buffer layer BF3, the third barrier layer BR3, and the fourth buffer layer BF4 are described; therefore, redundant descriptions are unnecessary. The thickness, material, and refractive index of the fourth barrier layer BR4 can be substantially the same as those of the third barrier layer BR3. The second porous layer PL_1 is referenced above. Figure 19 The description of the first porous layer PL is essentially the same; and therefore, redundant descriptions are unnecessary.

[0361] Figure 24 It shows the basis Figure 18 A cross-sectional view of another variation of the encapsulation layer in the embodiment.

[0362] according to Figure 24 The encapsulation layer 170_3 of the embodiment differs from the encapsulation layer 170 according to the above embodiment in that the encapsulation layer 170_3 includes a lower inorganic layer 171, an organic layer 173 and an upper inorganic layer 175_2.

[0363] More specifically, the encapsulation layer 170_3 according to the illustrated embodiment may include a lower inorganic layer 171, an organic layer 173, and an upper inorganic layer 175_2. Reference has been made above. Figure 23 The upper inorganic layer 175_2 is described; and therefore, redundant descriptions can be avoided.

[0364] Although embodiments of this disclosure have been disclosed for illustrative purposes, those skilled in the art will understand that various modifications, additions, and substitutions are possible without departing from the scope and spirit of this disclosure as disclosed in the appended claims and their equivalents.

Claims

1. A display device, comprising: The first substrate has a display area and a non-display area; Multiple light-emitting elements are located on the first substrate, and the multiple light-emitting elements are located in the display area; A capping layer is located above the plurality of light-emitting elements; as well as An encapsulation layer is located above the capping layer and the plurality of light-emitting elements. The encapsulation layer includes: First inorganic layer; An organic layer is located on the first inorganic layer, wherein the first inorganic layer is located between the capping layer and the organic layer; and The second inorganic layer is located on top of the organic layer. The first inorganic layer includes: A first buffer layer is located on the capping layer; The first barrier layer is located on the first buffer layer; A first porous layer is located on the first barrier layer; A second barrier layer is located on the first porous layer; and The second buffer layer is located on top of the second barrier layer. Among them, the refractive indices of the first buffer layer, the first barrier layer, and the first porous layer are different from each other, and The refractive index of the first porous layer is less than the refractive index of the first buffer layer and the refractive index of the first barrier layer.

2. The display device according to claim 1, wherein, The first barrier layer is located between the first buffer layer and the first porous layer. The second barrier layer is located between the first porous layer and the second buffer layer, and The second buffer layer is located between the second barrier layer and the organic layer.

3. The display device according to claim 2, wherein, The refractive index of the first buffer layer is less than the refractive index of the first barrier layer.

4. The display device according to claim 3, wherein, The refractive index of the first porous layer is in the range of 1.1 to 1.

45.

5. The display device according to claim 4, wherein, The refractive index of the first buffer layer is in the range of 1.3 to 1.

75.

6. The display device according to claim 5, wherein, The refractive index of the first barrier layer is in the range of 1.45 to 1.

85.

7. The display device according to claim 6, wherein, The refractive index of the second buffer layer is equal to the refractive index of the first buffer layer.

8. The display device according to claim 6, wherein, The second buffer layer is located directly beneath the organic layer.

9. The display device according to claim 8, wherein, The surface roughness of the second buffer layer is in the range of 5 nm to 100 nm.

10. The display device according to claim 8, wherein, The surface strength of the second buffer layer is in the range of 40 mN / m to 80 mN / m.

11. The display device according to any one of claims 2 to 10, wherein, The second inorganic layer includes a third buffer layer located on the organic layer and a third barrier layer located on the third buffer layer.

12. The display device according to claim 11, wherein, The refractive index of the third buffer layer is less than that of the third barrier layer.

13. The display device according to claim 12, wherein, The second inorganic layer further includes a fourth buffer layer located on the third barrier layer. The third buffer layer is located between the organic layer and the third barrier layer, and The third blocking layer is located between the third buffer layer and the fourth buffer layer.

14. The display device according to claim 13, further comprising: The second substrate is located above the encapsulation layer; Multiple color filters are located on the surface of the second substrate facing the first substrate, and the multiple color filters overlap with the multiple light-emitting elements respectively; Multiple wavelength conversion patterns are respectively located on the multiple color filters; as well as The filler is located between the first substrate and the second substrate.

15. The display device of claim 14, further comprising a plurality of thin-film transistors located between the first substrate and the plurality of light-emitting elements in the display area, the plurality of thin-film transistors being electrically connected to the plurality of light-emitting elements respectively. in, Each of the plurality of thin-film transistors includes: A semiconductor layer is located on the first substrate; The gate electrode is located on the semiconductor layer; The source electrode is connected to the semiconductor layer; and The drain electrode is connected to the semiconductor layer, and The semiconductor layer includes an oxide semiconductor.

16. The display device according to claim 15, wherein, Each of the plurality of light-emitting elements includes: The anode electrode is located above the source electrode and the drain electrode; Cathode electrode, facing the anode electrode; and Multiple emission layers are located between the anode electrode and the cathode electrode, and The plurality of emission layers form a series structure in which the plurality of emission layers overlap each other.

17. The display device according to claim 15, further comprising: A light-blocking layer is located between the first substrate and the semiconductor layer, and the light-blocking layer overlaps with the semiconductor layer. The light-blocking layer is electrically connected to the source electrode or the drain electrode.

18. The display device according to claim 14, wherein, The fourth buffer layer is in direct contact with the filler. The surface roughness of the fourth buffer layer is in the range of 5 nm to 100 nm, and The surface energy of the fourth buffer layer is in the range of 40mN / m to 80mN / m.

19. The display device according to claim 13, wherein, The second inorganic layer further includes: A fourth barrier layer is located between the third barrier layer and the fourth buffer layer; and The second porous layer is located between the fourth barrier layer and the third barrier layer, and The refractive index of the second porous layer is less than that of the third buffer layer, the third barrier layer, the fourth barrier layer, and the fourth buffer layer of the second inorganic layer.

20. A display device, comprising: The first substrate has a display area and a non-display area; Multiple light-emitting elements are located on the first substrate, and the multiple light-emitting elements are located in the display area; A capping layer is located above the plurality of light-emitting elements; as well as An encapsulation layer is located above the capping layer and the plurality of light-emitting elements. The encapsulation layer includes: First inorganic layer; An organic layer is located on the first inorganic layer, wherein the first inorganic layer is located between the capping layer and the organic layer; and The second inorganic layer is located on top of the organic layer. The second inorganic layer includes: A first buffer layer is located on the organic layer; The first barrier layer is located on the first buffer layer; A first porous layer is located on the first barrier layer; A second barrier layer is located on the first porous layer; and The second buffer layer is located on top of the second barrier layer. Among them, the refractive indices of the first buffer layer, the first barrier layer, and the first porous layer are different from each other, and The refractive index of the first porous layer is less than the refractive index of the first buffer layer and the refractive index of the first barrier layer.

21. The display device according to claim 20, wherein, The first inorganic layer includes: A third buffer layer is located on the light-emitting element; and The third barrier layer is located on the third buffer layer.

22. The display device according to claim 21, further comprising: The filler is located above the encapsulation layer. The first barrier layer is located between the first buffer layer and the first porous layer. The second barrier layer is located between the first porous layer and the second buffer layer, and The second buffer layer is located between the second barrier layer and the filler.

23. The display device of claim 22, wherein the refractive index of the first buffer layer is less than the refractive index of the first barrier layer. in, The refractive index of the first porous layer is in the range of 1.1 to 1.

45. Wherein, the refractive index of the first buffer layer is in the range of 1.3 to 1.75, and The refractive index of the first barrier layer is in the range of 1.45 to 1.85.

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