Embedded package structure and method of manufacturing the same

Abstract

The application discloses a kind of embedded packaging structure and its manufacturing method, the method includes the following steps: providing the bearing plate provided with first metal seed layer;First metal seed layer is processed to obtain substrate;Remove bearing plate, obtain substrate, and first cavity and second cavity are processed to obtain substrate through substrate;First component is installed in first cavity, and connecting soft plate is installed in second cavity, and the second insulating layer is processed to obtain the second side of substrate using photosensitive insulating material;Second circuit layer is processed to obtain the first side of substrate, and second component is installed on second circuit layer;By connecting soft plate bending substrate, the first side of substrate forms less than 180 degrees included angle, and the first side of substrate is packaged using packaging material, to obtain encapsulation layer.The embedded packaging structure and its manufacturing method of the application can reduce the size of the package in X direction and Y direction, which is beneficial to the miniaturization and high-density integration of the package.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to an embedded packaging structure and its fabrication method. Background Technology

[0002] With the development of technology, electronic devices are becoming increasingly miniaturized, lightweight, and multifunctional. This has led to increasingly complex integrated circuits and more and more components in semiconductor packages, which in itself restricts the miniaturization and lightweighting of packages. Currently, the main packaging methods used are Wire Bonding (WB) packaging and Flip Chip (FC) packaging. However, both of these packaging methods require components to be mounted on the substrate surface in a flat manner. With the increase in the number of components, current packaging methods are unable to effectively reduce the size of the package in the X and Y directions, making it difficult for the package to meet the development requirements of high-density integration and miniaturization. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes a method for manufacturing an embedded packaging structure, which enables the package to effectively reduce its size in both the X and Y directions.

[0004] The present invention also proposes an embedded encapsulation structure prepared by the above-described manufacturing method.

[0005] A method for fabricating an embedded encapsulation structure according to a first aspect of the present invention includes the following steps: providing a carrier plate having a first metal seed layer disposed thereon; processing a substrate on the first metal seed layer, the substrate including a first circuit layer, a first metal pillar, and a first insulating layer, wherein the first circuit layer and the first metal pillar are both located within the first insulating layer, and the first metal pillar is also located on the first circuit layer; removing the carrier plate to obtain the substrate, and processing a first cavity and a second cavity penetrating the substrate on the substrate; installing a first component in the first cavity, installing a connecting flexible board in the second cavity, and processing a second insulating layer on a second side of the substrate using a photosensitive insulating material to fix the first component and the connecting flexible board; processing a second circuit layer on a first side of the substrate, and installing a second component on the second circuit layer so that the first metal pillar and the first component are electrically connected to the second component through the second circuit layer; bending the substrate through the connecting flexible board to form an angle of less than 180 degrees on the first side of the substrate, and encapsulating the first side of the substrate using an encapsulation material to obtain an encapsulation layer.

[0006] The method for fabricating an embedded packaging structure according to an embodiment of the present invention has at least the following beneficial effects: by bending the substrate during the fabrication of the embedded packaging structure, a substrate with smaller dimensions in the X and Y directions is obtained, and then a packaging structure with smaller dimensions in the X and Y directions is obtained, which is beneficial to the miniaturization and high-density integration of the package.

[0007] According to some embodiments of the present invention, the process of processing a substrate on the first metal seed layer includes the following steps: processing a first circuit layer on the first metal seed layer, the first circuit layer including a first conductive line, a first sacrificial line and a second sacrificial line; processing a first metal pillar on the first circuit layer, the first metal pillar including a first conductive metal pillar located on the first conductive line, a first sacrificial metal pillar located on the first sacrificial line and a second sacrificial metal pillar located on the second sacrificial line; processing a first insulating layer between the gaps in the first circuit layer and the gaps in the first metal pillar using an insulating material, and obtaining the substrate.

[0008] According to some embodiments of the present invention, the process of obtaining a first insulating layer by processing an insulating material between the gaps of the first circuit layer and the gaps of the first metal pillar, and obtaining the substrate, includes the following steps: applying an insulating material to the first metal seed layer so that the insulating material covers the first metal pillar and the first circuit layer to obtain an insulating base layer; processing the insulating base layer and exposing the ends of the first metal pillars from the insulating base layer to obtain the first insulating layer and the substrate.

[0009] According to some embodiments of the present invention, the process of forming a first cavity and a second cavity penetrating the substrate on the substrate includes the following steps: removing the first sacrificial line and the first sacrificial metal pillar to form the first cavity penetrating the substrate; removing the second sacrificial line and the second sacrificial metal pillar to form the second cavity penetrating the substrate.

[0010] According to some embodiments of the present invention, a first metal layer, a second metal layer and an etch barrier layer are sequentially disposed on the carrier plate, and the first metal seed layer is located on the etch barrier layer. The removal of the carrier plate to obtain the substrate includes the following steps: separating the first metal layer from the second metal layer, and removing the second metal layer, the etch barrier layer and the first metal seed layer sequentially by etching, so as to remove the carrier plate and obtain the substrate.

[0011] According to some embodiments of the present invention, the step of installing a first component in the first cavity and installing a connecting flexible board in the second cavity includes the following steps: installing a temporary support layer on a first side of the substrate, the first side of the substrate being opposite to a second side of the substrate, and the first circuit layer being located on the second side of the substrate; pre-installing the first component and the connecting flexible board on the temporary support layer, the first component being located in the first cavity and the connecting flexible board being located in the second cavity.

[0012] According to some embodiments of the present invention, after the second insulating layer is obtained by processing the photosensitive insulating material on the second side of the substrate, the method further includes the step of removing the temporary carrier layer.

[0013] According to some embodiments of the present invention, the process of forming a second circuit layer on a first side of the substrate includes the following steps: forming a second metal seed layer on a first side of the substrate; and forming the second circuit layer on the second metal seed layer.

[0014] The embedded packaging structure according to a second aspect of the present invention is prepared by the method for manufacturing the embedded packaging structure described in the first aspect.

[0015] The embedded packaging structure according to the embodiments of the present invention has at least the following beneficial effects: the embedded packaging structure prepared by the above manufacturing method has a substrate whose size is reduced in the X and Y directions by bending the connecting flexible board, which is beneficial to reducing the size of the embedded packaging structure in the X and Y directions, thereby facilitating the miniaturization and high-density integration of the package.

[0016] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0017] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0018] Figure 1 This is a flowchart illustrating the fabrication method of the embedded packaging structure according to an embodiment of the present invention;

[0019] Figures 2 to 17 This is a cross-sectional schematic diagram of the embedded packaging structure during the intermediate process of the fabrication method of the embedded packaging structure according to an embodiment of the present invention.

[0020] The attached figures are labeled as follows:

[0021] The carrier plate 100, the first metal seed layer 110, the first metal layer 120, the second metal layer 130, and the etching barrier layer 140;

[0022] Substrate 200, first photoresist layer 210, first pattern 211, first circuit layer 220, first conductive line 221, first sacrificial line 222, second sacrificial line 223, second photoresist layer 230, second pattern 231, first metal pillar 240, first conductive metal pillar 241, first sacrificial metal pillar 242, second sacrificial metal pillar 243, first insulating layer 250;

[0023] Third photoresist layer 261, fourth photoresist layer 262, fifth photoresist layer 263, first cavity 271, second cavity 272, second insulating layer 281, second metal seed layer 282, second circuit layer 283, sixth photoresist layer 290, third pattern 291;

[0024] First component 300, connecting flexible board 400, temporary bearing layer 500, second component 600, encapsulation layer 700. Detailed Implementation

[0025] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0026] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0027] In the description of this invention, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. If the terms "first," "second," "third," "fourth," "fifth," and "sixth" are used only to distinguish technical features and should not be construed as indicating or implying relative importance, the number of indicated technical features, or the order of the indicated technical features.

[0028] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0029] Reference Figure 1A method for manufacturing an embedded encapsulation structure includes steps S1000, S2000, S3000, S4000, S5000 and S6000.

[0030] Step S1000: Provide a carrier plate 100, on which a first metal seed layer 110 is provided.

[0031] Specifically, refer to Figure 2 The carrier plate 100 is used to support the substrate 200; the first metal seed layer 110 serves as the basis for electroplating to facilitate subsequent processing to obtain the substrate 200.

[0032] In some embodiments, a first metal layer 120, a second metal layer 130, and an etching barrier layer 140 are sequentially disposed on the carrier plate 100, with a first metal seed layer 110 located on the etching barrier layer 140. The first metal layer 120 and the second metal layer 130 are detachably connected, for example, by snap-fit ​​connection, adhesive bonding, or plug-in connection, to facilitate subsequent removal of the carrier plate 100. The first metal layer 120 and the second metal layer 130 are used for subsequent separation of the substrate 200 from the carrier plate 100; the etching barrier layer 140 is used to isolate the second metal layer 130 from the first metal seed layer 110 to prevent over-etching when removing the second metal layer 130.

[0033] In step S2000, a substrate 200 is processed on the first metal seed layer 110. The substrate 200 includes a first circuit layer 220, a first metal pillar 240 and a first insulating layer 250. The first circuit layer 220 and the first metal pillar 240 are both located within the first insulating layer 250, and the first metal pillar 240 is also located on the first circuit layer 220.

[0034] Among them, reference Figures 2 to 7 Based on the first metal seed layer 110, the first circuit layer 220 and the first metal pillar 240 are obtained sequentially by electroplating, and finally the insulating material is filled to obtain the first insulating layer 250, thereby obtaining the substrate 200, so as to facilitate subsequent processing based on the substrate 200.

[0035] Specifically, step S2000 includes steps S2100, S2200, and S2300.

[0036] In step S2100, a first circuit layer 220 is processed on the first metal seed layer 110. The first circuit layer 220 includes a first conducting circuit 221, a first sacrificial circuit 222, and a second sacrificial circuit 223.

[0037] Reference Figure 3Photoresist material is applied to the first metal seed layer 110 by means of lamination or coating, and the photoresist material applied to the first metal seed layer 110 is exposed and developed according to production data to obtain a first photoresist layer 210 with a first pattern 211. (Refer to...) Figure 4 Based on the first pattern 211 of the first photoresist layer 210, a first circuit layer 220 is formed on the first metal seed layer 110 using electroplating, and then the first photoresist layer 210 is removed. The first circuit layer 220 includes a first conductive line 221, a first sacrificial line 222, and a second sacrificial line 223. The first conductive line 221 serves as the foundation for the conduction of subsequent circuits; the first sacrificial line 222 and the second sacrificial line 223 are used to form corresponding metal pillars to facilitate the subsequent processing to obtain the first cavity 271 and the second cavity 272.

[0038] In step S2200, a first metal pillar 240 is processed on the first circuit layer 220. The first metal pillar 240 includes a first conducting metal pillar 241 located on the first conducting circuit 221, a first sacrificial metal pillar 242 located on the first sacrificial circuit 222, and a second sacrificial metal pillar 243 located on the second sacrificial circuit 223.

[0039] Reference Figure 5 Photoresist material is applied to the first metal seed layer 110 and the first circuit layer 220 by means of lamination or coating. According to production data, the photoresist material applied to the first metal seed layer 110 and the first circuit layer 220 is exposed and developed to obtain a second photoresist layer 230 with a second pattern 231. (Refer to...) Figure 6 Based on the second pattern 231 of the second photoresist layer 230, a first metal pillar 240 is formed on the first circuit layer 220 using an electroplating process, and then the second photoresist layer 230 is removed. The first metal pillar 240 includes a first conductive metal pillar 241 located on the first conductive line 221, a first sacrificial metal pillar 242 located on the first sacrificial line 222, and a second sacrificial metal pillar 243 located on the second sacrificial line 223. The first conductive metal pillar 241 is used to establish an electrical connection between the first conductive line 221 and the subsequently formed second circuit layer 283, and also serves as a supporting foundation for the subsequently formed substrate 200, as well as for heat dissipation. The first sacrificial metal pillar 242 and the second sacrificial metal pillar 243 are used to define the size and position of the cavity formed in the subsequent processing, and also play a supporting role in the process of forming the substrate 200.

[0040] In step S2300, a first insulating layer 250 is obtained by processing an insulating material between the gaps in the first circuit layer 220 and the gaps in the first metal pillar 240, and a substrate 200 is obtained.

[0041] Reference Figure 7 An insulating material is applied between the gaps in the first circuit layer 220 and the gaps in the first metal pillar 240 by means of coating or pressing, so that the insulating material fills the gaps in the first circuit layer 220 and the gaps in the first metal pillar 240 to obtain a first insulating layer 250, thereby forming a substrate 200.

[0042] Step S2300 may also include steps S2310 and S2320.

[0043] In step S2310, an insulating material is applied to the first metal seed layer 110 so that the insulating material covers the first metal pillar 240 and the first circuit layer 220 to obtain an insulating base layer.

[0044] In step S2320, the insulating base layer is processed and the end of the first metal pillar 240 is exposed from the insulating base layer to obtain the first insulating layer 250 and the substrate 200.

[0045] Reference Figure 7 An insulating material is applied to the first metal seed layer 110 by coating or pressing, covering the first circuit layer 220 and the first metal pillar 240 to obtain an insulating base layer (not shown in the figure). At this time, the first metal pillar 240 is located within the insulating base layer, and the insulating base layer is relatively thick. Then, the insulating base layer is thinned by ion etching or grinding, so that the ends of the first metal pillar 240 are exposed from the insulating base layer, resulting in the first insulating layer 250. Obtaining the first insulating layer 250 through steps S2310 and S2320 helps to reduce the processing difficulty.

[0046] It should be noted that the end of the first metal pillar 240 refers to the end of the first metal pillar 240 that is away from the first circuit layer 220. That is, the first end of the first metal pillar 240 is connected to the first circuit layer 220, and the second end of the first metal pillar 240 is opposite to the first end of the first metal pillar 240 and is farther away from the first circuit layer 220 than the first end of the first metal pillar 240. Therefore, the second end of the first metal pillar 240 is the end of the first metal pillar 240.

[0047] In step S3000, the carrier plate 100 is removed to obtain the substrate 200, and a first cavity 271 and a second cavity 272 penetrating the substrate 200 are processed on the substrate 200.

[0048] Reference Figures 8 to 10After the first insulating layer 250 is formed, the substrate 200 is obtained. At this time, the carrier plate 100 is removed to obtain the substrate 200 for subsequent processing. After the carrier plate 100 is removed, the substrate 200 can be processed by etching or other methods to obtain the first cavity 271 and the second cavity 272, so as to facilitate the subsequent mounting of the first component 300 and the connecting flexible board 400.

[0049] In some embodiments, a first metal layer 120, a second metal layer 130 and an etch barrier layer 140 are sequentially disposed on the carrier plate 100, and the first metal seed layer 110 is located on the etch barrier layer 140. Then, in step S3000, "removing the carrier plate 100 to obtain the substrate 200" includes step S3100.

[0050] In step S3100, the first metal layer 120 is separated from the second metal layer 130, and the second metal layer 130, the etch barrier layer 140 and the first metal seed layer 110 are removed in sequence by etching to remove the carrier plate 100 and obtain the substrate 200.

[0051] The first metal layer 120 and the second metal layer 130 are detachably connected by means of snap-fit ​​or adhesive bonding. Therefore, when removing the carrier plate 100, the first metal layer 120 can be directly separated from the second metal layer 130. Then, based on the materials of the second metal layer 130, the etching barrier layer 140, and the first metal seed layer 110, appropriate etching solutions are selected to sequentially etch the carrier plate 100, thereby removing it. For example, when removing the etching barrier layer 140, a nickel etching solution can be used to etch it. By sequentially etching away the second metal layer 130, the etching barrier layer 140, and the first metal seed layer 110, over-etching is avoided.

[0052] In step S3000, "processing a first cavity 271 and a second cavity 272 through the substrate 200" includes steps S3200 and S3300.

[0053] In step S3200, the first sacrificial line 222 and the first sacrificial metal pillar 242 are removed to form a first cavity 271 penetrating the substrate 200.

[0054] In step S3300, the second sacrificial line 223 and the second sacrificial metal pillar 243 are removed to form a second cavity 272 penetrating the substrate 200.

[0055] Reference Figure 9 and Figure 10Photoresist material is applied to the first side and the second side of the substrate 200 by means of film application or coating, thereby forming a third photoresist layer 261 on the first side of the substrate 200 and a fourth photoresist layer 262 on the second side of the substrate 200. The third photoresist layer 261 and the fourth photoresist layer 262 cooperate to hide the first conductive line 221 and the first conductive metal pillar 241 between the third photoresist layer 261 and the fourth photoresist layer 262, and expose the first sacrificial line 222, the second sacrificial line 223, the first sacrificial metal pillar 242 and the second sacrificial metal pillar 243 in the openings of the third photoresist layer 261 and the fourth photoresist layer 262, so that the first sacrificial line 222, the second sacrificial line 223, the first sacrificial metal pillar 242 and the second sacrificial metal pillar 243 can be removed by etching, thereby forming the first cavity 271 and the second cavity 272 penetrating the substrate 200, respectively, and then the third photoresist layer 261 and the fourth photoresist layer 262 are removed.

[0056] In step S4000, a first component 300 is installed in the first cavity 271, a connecting flexible board 400 is installed in the second cavity 272, and a second insulating layer 281 is processed on the second side of the substrate 200 using a photosensitive insulating material to fix the first component 300 and the connecting flexible board 400.

[0057] Reference Figure 11 and Figure 12 After the first component 300 is installed in the first cavity 271 and the connecting flexible circuit board 400 is installed in the second cavity 272, a photosensitive insulating material is applied to the second side of the substrate 200 by means of coating or pressing. Through exposure and development, a portion of the first circuit layer 220 and the connecting flexible circuit board 400 are exposed from the photosensitive insulating material applied to the second side of the substrate 200, thereby forming a second insulating layer 281. Exposing the first circuit layer 220 facilitates its use as a circuit interface; exposing a portion of the connecting flexible circuit board 400 allows it to be bent, facilitating subsequent processing. The second insulating layer 281 serves to fix the first component 300 and the connecting flexible circuit board 400 to prevent them from detaching from the substrate 200. Simultaneously, the second insulating layer 281 also protects the substrate 200, improving its structural strength.

[0058] In step S4000, “installing the first component 300 in the first cavity 271 and installing the connecting flexible board 400 in the second cavity 272” may include steps S4100 and S4200.

[0059] In step S4100, a temporary support layer 500 is installed on the first side of the substrate 200, the first side of the substrate 200 is opposite to the second side of the substrate 200, and the first circuit layer 220 is located on the second side of the substrate 200.

[0060] In step S4200, a first component 300 and a connecting flexible board 400 are pre-installed on the temporary support layer 500. The first component 300 is located in the first cavity 271, and the connecting flexible board 400 is located in the second cavity 272.

[0061] Reference Figure 11 A temporary support layer 500 is installed to support the first component 300 and the connecting flexible circuit board 400, and to provide a certain degree of fixation, thereby limiting the position of the first component 300 and the connecting flexible circuit board 400. This ensures that when the second insulating layer 281 is subsequently processed using photosensitive insulating material, the first component 300 and the connecting flexible circuit board 400 can be accurately fixed in the appropriate position. The temporary support layer 500 can be made of tape or metal plate, and can be installed using methods such as adhesive or snap-fit.

[0062] In addition, step S4300 is included after step S4000.

[0063] Step S4300: Remove the temporary support layer 500.

[0064] After the second insulating layer 281 is processed, the second insulating layer 281 fixes the first component 300 and the connecting flexible board 400 on the substrate 200. At this time, the temporary carrier layer 500 can be removed to facilitate subsequent processing on the first side of the substrate 200.

[0065] In step S5000, a second circuit layer 283 is processed on the first side of the substrate 200, and a second component 600 is mounted on the second circuit layer 283 so that the first metal pillar 240 and the first component 300 are electrically connected to the second component 600 through the second circuit layer 283.

[0066] Reference Figures 13 to 16 Electroplating can be used to process a second circuit layer 283 on the first side of the substrate 200 according to production data. Then, a second component 600 is installed on the second circuit layer 283 so that the first circuit layer 220, the first metal pillar 240, the first component 300 and the second component 600 form a complete circuit structure.

[0067] In step S5000, "processing the second circuit layer 283 on the first side of the substrate 200" may also include steps S5100 and S5200.

[0068] In step S5100, a second metal seed layer 282 is processed on the first side of the substrate 200.

[0069] In step S5200, a second circuit layer 283 is obtained by processing the second metal seed layer 282.

[0070] Reference Figure 13 A second metal seed layer 282 is obtained by sputtering metal, such as titanium or copper, onto the first side of the substrate 200 using methods such as metal sputtering. (Refer to...) Figure 14 Photoresist material is applied to the second metal seed layer 282 on the second side and the first side of the substrate 200 by means of lamination or coating, thereby forming a fifth photoresist layer 263 on the second side of the substrate 200. Then, according to production data, the photoresist material located on the second metal seed layer 282 is exposed and developed, thereby forming a sixth photoresist layer 290 with a third pattern 291 on the second metal seed layer 282. (Refer to...) Figure 15 Based on the third pattern 291 of the sixth photoresist layer 290, the second circuit layer 283 is processed on the second metal seed layer 282 using electroplating. Steps S5100 and S5200 help reduce the processing difficulty and obtain a second circuit layer 283 with a better yield.

[0071] In step S6000, the substrate 200 is bent by connecting the flexible board 400 so that the first side of the substrate 200 forms an angle of less than 180 degrees, and the first side of the substrate 200 is encapsulated using encapsulation material to obtain the encapsulation layer 700.

[0072] Reference Figure 17 Based on the flexibility of the flexible circuit board 400, the substrate 200 is bent downwards to form an angle of less than 180 degrees on the first side of the substrate 200. In this embodiment, the angle is 90 degrees to more effectively reduce the size of the substrate 200 in the X and Y directions. After bending the substrate 200, the first side of the substrate 200 is encapsulated with an encapsulation material to obtain an encapsulation layer 700. The encapsulation layer 700 is used to protect the second component 600 and the second circuit layer 283 on the first side of the substrate 200, and at the same time, it is used to fix the bent substrate 200 to prevent the substrate 200 from moving through the flexible circuit board 400.

[0073] Through step S6000, an embedded packaging structure with effectively reduced size in the X and Y directions is finally obtained. That is, the embedded packaging structure prepared by the above-mentioned embedded packaging structure manufacturing method is beneficial to the miniaturization and high-density integration of the package.

[0074] It should be noted that, referring to Figure 17The X direction is located in the left and right directions, and the Y direction is perpendicular to the X direction and the up and down directions.

[0075] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A method for fabricating an embedded encapsulation structure, characterized in that, Includes the following steps: A carrier plate is provided, wherein a first metal seed layer is disposed on the carrier plate; A substrate is processed on the first metal seed layer. The substrate includes a first circuit layer, a first metal pillar, and a first insulating layer. The first circuit layer and the first metal pillar are both located within the first insulating layer, and the first metal pillar is also located on the first circuit layer. Remove the carrier plate to obtain the substrate, and process a first cavity and a second cavity penetrating the substrate on the substrate; A first component is installed in the first cavity, a connecting flexible board is installed in the second cavity, and a second insulating layer is obtained by processing a photosensitive insulating material on the second side of the substrate to fix the first component and the connecting flexible board. A second circuit layer is processed on the first side of the substrate, and a second component is mounted on the second circuit layer so that the first metal pillar and the first component are electrically connected to the second component through the second circuit layer respectively. The substrate is bent by the connecting flexible board so that the first side of the substrate forms an angle of less than 180 degrees, and the first side of the substrate is encapsulated with encapsulation material to obtain an encapsulation layer.

2. The method for manufacturing the embedded encapsulation structure according to claim 1, characterized in that, The process of obtaining the substrate on the first metal seed layer includes the following steps: A first circuit layer is processed on the first metal seed layer, and the first circuit layer includes a first conducting circuit, a first sacrificial circuit and a second sacrificial circuit. A first metal pillar is fabricated on the first circuit layer. The first metal pillar includes a first conducting metal pillar located on the first conducting circuit, a first sacrificial metal pillar located on the first sacrificial circuit, and a second sacrificial metal pillar located on the second sacrificial circuit. A first insulating layer is obtained by processing an insulating material between the gaps in the first circuit layer and the gaps in the first metal pillar, and the substrate is obtained.

3. The method for manufacturing the embedded encapsulation structure according to claim 2, characterized in that, The process of forming a first insulating layer by using an insulating material between the gaps in the first circuit layer and the gaps in the first metal pillar, and then obtaining the substrate, includes the following steps: An insulating material is applied to the first metal seed layer so that the insulating material covers the first metal pillar and the first circuit layer to obtain an insulating base layer. The insulating base layer is processed to expose the end of the first metal pillar from the insulating base layer to obtain the first insulating layer and the substrate.

4. The method for manufacturing the embedded encapsulation structure according to claim 2, characterized in that, The process of forming a first cavity and a second cavity penetrating the substrate on the substrate includes the following steps: Remove the first sacrificial line and the first sacrificial metal pillar to form the first cavity penetrating the substrate; The second sacrificial line and the second sacrificial metal pillar are removed to form the second cavity penetrating the substrate.

5. The method for fabricating the embedded encapsulation structure according to claim 1, characterized in that, The carrier plate is sequentially provided with a first metal layer, a second metal layer, and an etch barrier layer, with the first metal seed layer located on the etch barrier layer. Removing the carrier plate to obtain the substrate includes the following steps: The first metal layer is separated from the second metal layer, and the second metal layer, the etch barrier layer and the first metal seed layer are removed in sequence by etching to remove the carrier plate and obtain the substrate.

6. The method for manufacturing the embedded encapsulation structure according to claim 1, characterized in that, The process of installing a first component in the first cavity and installing a connecting flexible circuit board in the second cavity includes the following steps: A temporary carrier layer is installed on a first side of the substrate, the first side of the substrate being opposite to a second side of the substrate, and the first circuit layer being located on the second side of the substrate; The first component and the connecting flexible board are pre-installed on the temporary support layer. The first component is located in the first cavity, and the connecting flexible board is located in the second cavity.

7. The method for manufacturing the embedded encapsulation structure according to claim 6, characterized in that, After the second insulating layer is obtained by processing the second side of the substrate using a photosensitive insulating material, the method further includes the following steps: Remove the temporary support layer.

8. The method for manufacturing the embedded encapsulation structure according to claim 1, characterized in that, The process of forming a second circuit layer on the first side of the substrate includes the following steps: A second metal seed layer is processed on the first side of the substrate; The second circuit layer is obtained by processing the second metal seed layer.

9. An embedded packaging structure, characterized in that, It is prepared by the method of any one of claims 1 to 8 for manufacturing the embedded encapsulation structure.

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