Capacitor Structure

Abstract

This invention relates to a capacitor structure and a method of manufacturing such a capacitor structure, wherein the capacitor structure is implemented as a layered structure comprising a plurality of alternating dielectric layers and metallization layers. The capacitor structure includes at least one lateral parallel plate capacitor portion (LPP portion) and at least one vertical parallel plate capacitor portion (VPP portion). The at least one LPP portion includes two first electrodes on two different layers separated by the dielectric material of the plurality of alternating layers. The at least one VPP portion includes two second electrodes, each second electrode comprising a plurality of stacked plates or strips disposed on the plurality of metallization layers. The at least one LPP portion and the at least one VPP portion are electrically coupled to form the capacitor structure. A change in capacitance of one of the at least one LPP portions due to a change in the thickness of one of the dielectric materials is at least partially compensated by a reverse change in capacitance of one of the at least one VPP portions.

Description

Technical Field

[0001] This invention relates to a capacitor device structure and a method for manufacturing the same structure.

[0002] Prior Technology

[0003] Figure 1a A parallel-plate capacitor is shown with two laterally oriented conductor plates having a conductor plate length L, a conductor plate width W, and a vertical distance D between the two plate electrodes (100, 102). The gap between the first plate electrode (100) and the second plate electrode (102) is filled with a dielectric (101) having a thickness D and a relative permittivity ∈ r And the permittivity of a parallel-plate capacitor with respect to vacuum is constant (∈0). The capacitance of a parallel-plate capacitor is given by the following formula:

[0004] C=∈0×∈ r ×(W×L) / D (1).

[0005] In the semiconductor industry, when an insulator is used as the dielectric (101), such capacitors are typically manufactured by placing one or more layers of insulating material between two flat metal plates, and are therefore commonly referred to as metal-insulator-metal (MIM) capacitors. This type of capacitor can be called a horizontal capacitor or a lateral capacitor because the conductor plates extend in a horizontal direction, which can also be considered a lateral direction.

[0006] Equation (1) is essentially accurate when the dimensions of the plate electrodes (100, 102), especially their width (W) and length (L), are significantly larger than the distance (D). This is because, in this case, it can be assumed that the electric field between the plates is constant, and any edge field can be practically ignored. Since capacitance is proportional to dimensions W and L and inversely proportional to D, it is assumed that the absolute tolerances of W, L, and D are on the same order of magnitude. Since W and L are significantly larger than D, from the viewpoint of capacitance tolerance, the most critical dimension is clearly D. Figure 1b Show Figure 1a A cross-section of the capacitor. The current flux (103) between the plate electrodes (100, 102) is mainly located between the plate electrodes (100, 102).

[0007] If the width or length of the capacitor plates is not large compared to the distance between the plates, then the edge field (104) around the edge of the capacitor makes a significant contribution to the total capacitance and should be taken into account. Figure 2a The vertical parallel plate (VPP) capacitor structure shown exemplifies this situation. Figure 1aCompared to the previous structure, this structure is rotated in the following way: the direction of the electric flux has been rotated by 90 degrees and extends horizontally between the plates, while the capacitor plates (200, 202) extend vertically. In this specific case, the width W of the capacitor plates cannot be considered significantly greater than the distance D between the plates (200, 202). Equation (2) corresponding to (1) can still be used to roughly estimate the capacitance.

[0008] C≈∈0×∈r×(W×L) / D (2)

[0009] Figure 2b Show Figure 2a The cross-section of the capacitor. The edge electric field (104) at the edge of the parallel plate electrodes (200, 202) that are not completely perpendicular to the plate electrodes (200, 202) has a more significant effect on the total capacitance.

[0010] Depending on the shape of the metal plate electrodes and the distance between them, edge capacitance can be even greater than direct capacitance. Edge capacitance plays a dominant role in typical interconnects of integrated circuits because these lines are usually long and narrow.

[0011] Various manufacturing methods for fabricating capacitors on semiconductor device structures are known, but in many cases, the capacitor structure is made using a high-dielectric material (in other words, a material with a high dielectric constant, such as ceramic, glass, or sapphire) to reduce the physical size of the capacitor. Additionally, silicon oxide can be used as the dielectric material. A high-dielectric material is defined as a material with a relative permittivity of at least 4. By using a high-dielectric material, the capacitor will have a higher capacitance density, thus enabling a smaller size to achieve the desired capacitance. Therefore, a semiconductor device can include both a semiconductor layer and a layered structure with alternating dielectric and metallization layers, wherein at least one capacitor structure is included in the layered dielectric metallization structure disposed on top of a portion of the semiconductor device. In a typical device, the semiconductor layer lies below the dielectric and metallization layers, which can provide, for example, the wiring required in the metallization layer of a circuit system, and passive components comprising a metallization pattern surrounded by a dielectric material. As is known in the art, one or more intermediate layers can be provided between the semiconductor layer and the layered dielectric metallization structure. The intermediate layers may, for example, comprise a polysilicon layer and / or a silicon oxide layer.

[0012] Description of background technology

[0013] US6690570 B2 discloses a vertical parallel plate capacitor defined by finger-shaped intersecting vertical plate electrodes formed of conductive layers coupled to each other through conductive vias.

[0014] US Patent 6542351B1 discloses a capacitor structure that includes a comb-like structure in a first plane, wherein electrode fingers extend alternately between each other, and an additional electrode group is defined on at least one additional plane substantially parallel to the first plane. By adjusting the placement of electrode fingers of different polarities on different layers, capacitance variations caused by changes in the thickness of the interlayer dielectric are reduced.

[0015] Patent application US20100123213 A1 discloses a capacitor formed in a dielectric stack in an integrated circuit, the integrated circuit containing metal lines and metal plates in alternating metal interconnect layers.

[0016] US Patent 6969680B2 discloses a capacitor formed by a conductive strip layer on a substrate and conductive plates above and below the strip structure to provide shielding.

[0017] Current capacitors have a considerable tolerance, for example, due to variations in layer thickness during manufacturing.

[0018] The area consumed by capacitors is a major design limitation. One known method to improve capacitance density is, for example, using a plurality of interlaced electrode fingers in the aforementioned current technology. However, due to variations in the manufacturing process of this type of capacitor device, the capacitance value tolerance is relatively large. In other words, the accuracy of the capacitance value is quite poor, which poses a challenge in manufacturing mass-production devices for applications requiring accurate capacitance values. Chip antennas and capacitors used for antenna matching in radio devices are typical examples of such applications.

[0019] In mass production, selecting individual capacitors is commercially impractical. One known solution is to perform capacitor trimming, which is somewhat useful but requires time and resources, thus increasing costs. Therefore, there is a need for a cost-effective way to control the variation in capacitance values ​​across a large number of capacitor devices.

[0020] Figure 3 A vertical capacitor structure with N electrode fingers is shown. Each electrode finger forms a capacitor plate pair with one or two adjacent electrode fingers, and the total capacitance of the vertical capacitor structure is achieved by combining all adjacent vertically oriented capacitor plate pairs. Figure 3 In the example, the exemplary configuration has odd-numbered electrode fingers 1, 3, 5, ... forming one electrode together, and even-numbered electrode fingers 2, 4, 6, ... forming another electrode together. The distance D between any two adjacent electrode fingers can be equal or can vary. In typical vertical capacitor designs, the distance D between the electrode fingers is equal. However, it is not necessary for the distances to be equal, and modern simulation tools can easily and accurately calculate the nominal capacitance of any kind of capacitor structure.

[0021] Figure 4a A top view of an exemplary vertical parallel-plate capacitor metallization pattern is shown, wherein the positive electrode (200) and negative electrode (202) comprise a pattern of stacked, finger-like, intersecting metal electrode fingers having a plurality of through-holes connecting the stacked metallization layers together. The dielectric material between the structures is not shown. Figure 4b The same structure of the metal parts is shown along Figure 4a The diagram shows a perspective view of the cut line AA. This view illustrates a plurality of metallization layers (L1, L3, L5, L7, L9) and interconnecting vias (40) between plates or strips formed on these metallization layers. This structure is in principle similar to the previously mentioned US6690570. The illustrative device's vertical stack comprises two thicker metallization layers (L7, L9) and three thinner metallization layers (L1, L3, L5).

[0022] Figure 4b The layer structure shown is typical, for example, for metallization of the back-end of an RF integrated circuit (RFIC) line with a thick metal option, where the thick metal layer can be used, for example, to form low-loss RF coils or transmission lines. Several thinner layers (L1, L3, L5) are also present for less critical fine-pitch wiring and connections in semiconductor devices. Unfortunately, given manufacturing constraints, this type of layer structure is not necessarily optimal, as the two thick metallization layers (L7, L9) will likely dominate in the thickness variation, which contributes to increased capacitance variation. These characteristics make this vertical parallel-plate capacitor type unsuitable for, for example, antennas and / or antenna interfaces requiring precise capacitance values. Summary of the Invention

[0023] One objective is to provide a capacitor structure that is less susceptible to capacitance variations caused by changes in the thickness of material layers in a multilayer structure. This objective is achieved through the capacitor structure and electronic device according to this disclosure. The objective is also achieved through methods of manufacturing the capacitor structure and the electronic device.

[0024] This invention is based on the concept of a combined capacitor structure having both a vertical parallel-plate capacitor portion and a lateral parallel-plate capacitor portion. In this combined capacitor structure, due to manufacturing limitations, specifically due to variations in the thickness of the dielectric layer and / or metallization layer of the capacitor structure, the capacitance changes in the vertical and lateral portions effectively cancel each other out. Typically, the metal patterns on the metallization layer can be formed into various shapes, but narrow lines, plates, strips, or rectangular plates are commonly used for both interconnects and capacitors, with the dielectric material surrounding the metal patterns on the respective metallization layers. These shapes are used in the following description, but other shapes are not excluded.

[0025] According to a first aspect, a capacitor structure is provided, which is implemented as a layered structure comprising a plurality of alternating dielectric layers and metallization layers. The capacitor structure includes at least one lateral parallel-plate capacitor portion (LPP portion) and at least one vertical parallel-plate capacitor portion (VPP portion). The at least one lateral parallel-plate capacitor portion (LPP portion) includes two first electrodes separated by the dielectric material of the plurality of alternating layers, the two first electrodes being formed on two different layers by two substantially parallel metallization patterns. The at least one vertical parallel-plate capacitor portion (VPP portion) includes two second electrodes, each second electrode comprising a plurality of stacked plates or strips disposed on the plurality of metallization layers. The at least one LPP portion and the at least one VPP portion are electrically coupled to form the capacitor structure. The capacitance change of the at least one LPP portion caused by the thickness variation of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes is at least partially compensated by the opposite capacitance change of the at least one VPP portion, wherein the thickness variation of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes causes a difference in the distance between the two first electrodes in the vertical dimension relative to a nominal value, and the opposite capacitance change of the at least one VPP portion is caused by the difference in the width of the two second electrodes in the vertical dimension relative to a nominal value due to the thickness variation of the dielectric material in at least one of the plurality of alternating layers.

[0026] According to the second aspect, the at least one LPP portion and the at least one VPP portion are electrically coupled to each other in parallel or in series.

[0027] According to the third aspect, the capacitor structure includes at least two LPP sections and at least two VPP sections, wherein at least one LPP section and at least one VPP section are electrically coupled in parallel to each other, and wherein at least another LPP section and at least another VPP section are electrically coupled in series to each other.

[0028] According to the fourth aspect, the two second electrodes include a plurality of electrode fingers, each electrode finger being formed by a plurality of stacked plates or strips, the electrode fingers of the two second electrodes forming a comb-like structure in the form of finger-like intersecting electrode fingers, wherein adjacent electrode fingers have alternating polarities, and / or, the stacked plates or strips are permeated by one or more conductive vias, the one or more conductive vias passing through each dielectric material layer separating two adjacent metallization layers including the stacked plates or strips.

[0029] According to the fifth aspect, the two first electrodes reside on a metallization layer of a top and bottom plate or strip of a capacitor structure, including a second electrode, the top and bottom plate or strip defining the width of the second electrode in the vertical dimension.

[0030] According to a sixth aspect, one of the two first electrodes resides on a layer of the capacitor junction above a metallization layer in the vertical dimension, the metallization layer comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension. Alternatively, one of the two first electrodes resides on a layer of the capacitor structure below a metallization layer in the vertical dimension, the metallization layer comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension.

[0031] According to the seventh aspect, one of the two first electrodes resides on a layer of the capacitor structure above a metallization layer of the capacitor structure, the metallization layer comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure below a metallization layer of the capacitor structure, the metallization layer comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension.

[0032] According to the eighth aspect, the vertical distance between adjacent surfaces of the two first electrodes is defined by the thickness of the layer that defines the width of the two second electrodes in the vertical dimension.

[0033] According to another aspect, an electronic device is provided, the electronic device comprising a semiconductor device structure, one or more intermediate layers optionally on top of the semiconductor device structure, and a capacitor structure according to any of the foregoing aspects disposed on top of the semiconductor device structure or on top of the intermediate layers.

[0034] According to a first aspect of the method, a method for manufacturing a capacitor structure is provided, wherein the capacitor structure is a layered structure comprising a plurality of alternating dielectric layers and metallization layers.

[0035] The method includes: during a manufacturing process, producing at least one lateral parallel plate capacitor portion (LPP portion) including two first electrodes by forming two substantially parallel metallization patterns on two different layers of a capacitor structure, wherein the two first electrodes are separated by a plurality of alternating layers of dielectric material; and producing at least one vertical parallel plate capacitor portion (VPP portion) including two second electrodes by creating a plurality of stacked plates or strips on a plurality of metallization layers; and electrically coupling at least one LPP portion to at least one VPP portion to form a capacitor structure. The change in capacitance of the at least one LPP portion caused by the thickness variation of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes is at least partially compensated by the opposite change in capacitance of the at least one VPP portion, wherein the thickness variation of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes causes a difference in the distance between the two first electrodes in the vertical dimension relative to a nominal value, and the opposite change in capacitance of the at least one VPP portion is caused by the difference in the width of the two second electrodes in the vertical dimension relative to a nominal value due to the thickness variation of the dielectric material in at least one of the plurality of alternating layers.

[0036] According to another method aspect, a method for manufacturing an electronic device is provided, the method comprising: manufacturing a semiconductor device structure, optionally manufacturing one or more intermediate layers on top of the semiconductor device structure, and manufacturing a capacitor structure according to any one of the first to eighth aspects on top of the semiconductor device structure or on top of one or more intermediate layers using the method according to the first method aspect.

[0037] The concept of the invention can be implemented in various ways with different metal patterns. However, it is essential that the capacitor structure has both a) portions where the capacitance increases with the layer thickness of the capacitor structure, and b) portions where the capacitance decreases with the layer thickness of the capacitor structure, and the layer thickness in these portions is at least partially, preferably primarily, defined by the same layers. This makes it possible to compensate for changes in the total capacitance of the capacitor structure due to variations in layer thickness. Ideally, this compensation would cover all layers and all portions of the capacitor structure, but in typical cases, it is impossible to include changes in all layers in the compensation scheme. For example, there may be limitations in the manufacturing process used to produce the capacitor structure. However, even partial compensation reduces the capacitance variation.

[0038] In capacitor design, the effect of edge capacitance is considered to keep variations in capacitance within desired tolerances. Modern design tools can account for edge capacitance through, for example, accurate simulation.

[0039] This invention has the advantage of improving the capacitance tolerance of the capacitor structure according to the invention. In other words, the capacitance value of a capacitor having the capacitor structure of the invention is accurate without the need for separate selection or adjustment. The capacitor structure of the invention advantageously compensates for the effect of layer thickness variations caused by manufacturing tolerances on the capacitance value, thereby reducing capacitance variation. Attached Figure Description

[0040] In the following description, the invention will be described in more detail with reference to the accompanying drawings and preferred embodiments, wherein... Figure 1a and Figure 1b A lateral parallel plate capacitor is shown.

[0041] Figure 2a and Figure 2b A vertical parallel plate capacitor is shown.

[0042] Figure 3 A vertical capacitor structure with a plurality of vertical plate electrodes is shown.

[0043] Figure 4a and Figure 4b A vertical parallel plate capacitor is shown.

[0044] Figure 5 A cross-section of a device having lateral and vertical parallel plate capacitor portions according to a first embodiment is shown.

[0045] Figure 6 A cross-section of an apparatus having lateral and vertical parallel plate capacitor portions according to a second embodiment is shown.

[0046] Figure 7 A cross-section of a device having lateral and vertical parallel plate capacitor portions according to a third embodiment is shown.

[0047] Figure 8 A cross-section of a device having lateral and vertical parallel plate capacitor portions according to a fourth embodiment is shown.

[0048] Figure 9 A cross-section of a device having lateral and vertical parallel plate capacitor portions according to a fifth embodiment is shown.

[0049] Figure 10 The diagram schematically illustrates the mutual coupling between a plurality of lateral parallel plate capacitor sections and vertical parallel plate capacitor sections.

[0050] Figure 11 A top view of the first non-restrictive implementation example is shown.

[0051] Figure 12 A top view showing a second non-restrictive implementation example.

[0052] Figure 13a and Figure 13b An isometric solid view of a second non-restrictive implementation example is shown. Detailed Implementation

[0053] A change or alteration in terminology refers to a situation where the value of a physical quantity differs from its nominal value. For example, a change or alteration in layer thickness due to manufacturing tolerances means that the layer thickness in the final product differs from the nominal value used in the design to achieve the desired characteristics of the associated physical quantity. Similarly, if all layers have the nominal thickness used when designing a capacitor, a change or alteration in capacitance due to variations in the thickness of each layer means that the capacitance value differs from the nominal value to be achieved.

[0054] As is known in the art, metallic dielectric devices are typically fabricated as layers. In a layered structure, the terms lateral and horizontal are generally used to refer to structures or fields, such as electric fields, extending along the material layers. Lateral structures may be disposed between other lateral layers, or may extend along the lateral surfaces of the layered structure. Correspondingly, the term vertical is used to refer to structures or fields extending in a direction perpendicular to the lateral layers. In a layered structure, a vertical structure comprises portions disposed at a plurality of stacked material layers, and thus the vertical structure extends above the plurality of material layers. The vertical structure may pass perpendicularly through at least some of the plurality of material layers or between them, and a via-like connection may be present on any intermediate layer. The vertical structure may comprise several stacked portions on different material layers. Thus, the lateral and vertical structures have a substantially 90-degree transposition. Similarly, the lateral and vertical fields have a substantially 90-degree transposition.

[0055] Two adjacent vertical structures can be used to generate lateral capacitance, wherein a lateral electric field can be generated between the two vertical structures. Two lateral metal patterns stacked on two different, vertically separated layers generate vertical capacitance, wherein a vertical electric field may be generated between the two lateral metal patterns. To achieve the benefits of the invention, it is advantageous to maximize the number of layers, which affects both the lateral capacitance of the vertical parallel plate capacitor portion and the vertical capacitance of the lateral parallel plate capacitor portion.

[0056] The term "lateral parallel plate capacitor portion" (LPP portion) refers to a capacitor portion of the parallel plate capacitor type, comprising two lateral parallel plate electrodes. The term "vertical parallel plate capacitor portion" (VPP portion) refers to a capacitor portion of the parallel plate type, which may comprise two vertical parallel plate electrodes or more than two intersecting vertical parallel plate electrode fingers, which may be simply referred to as vertical electrode fingers. Vertical parallel plate electrodes and vertical electrode fingers typically comprise a plurality of stacked metallized plates or strips, but may even be formed on a single metallization layer.

[0057] In the following text, we will use Figures 5 to 9This section explains some basic properties and principles of the implementation method. The figures are not drawn to scale, and the scale used in the lateral and vertical dimensions may differ. Furthermore, although the layers of the capacitor structure are shown as having approximately equal thickness in the vertical direction, the implementation is not limited to any particular number of layers in the structure, nor is it limited to structures with layers of equal thickness. Rather, the principle applies to any number or combination of layers and layer thicknesses, such as... Figure 4b As shown in the diagram. The horizontal dashed line represents the boundary between the dielectric layer and the metallization layer.

[0058] Figure 5 A cross-section of a capacitor structure having a VPP portion and an LPP portion according to a first embodiment is shown. The capacitor device comprises a plurality of layers (L0, L1, L2, ..., L6). Although this example shows seven layers, any number of layers is applicable. Specifically, more than seven layers may be used. The metallized electrode plates (100, 102) of the LPP portion and the metallized plates or strips (200a to 200c, 202a to 202c) of the electrodes of the VPP portion are disposed on odd-numbered layers L1, L3, and L5, which may generally be referred to as metallization layers. The metal pattern is surrounded by dielectric material on the metallization layers. The even-numbered layers L0, L2, L4, and L6 may be referred to as dielectric layers because these layers mainly contain non-conductive dielectric materials, such as glass, ceramic, sapphire, or oxide materials.

[0059] In the first embodiment, the stacked plates or strips of the VPP portion are coupled to each other through one or more metallized vias (40) extending through an intermediate dielectric layer between two metallized layers. The shape, size, number, and location of the vias (40) between the plates or strips are design options.

[0060] In the following embodiments, reference symbols LD and VD will be used to refer to the distance (D) between electrodes, reference symbols LW and VW will be used to refer to the width (W) of electrodes, and reference symbols LL and VL will be used to refer to the length of the LPP portion and the VPP portion, respectively.

[0061] In the first embodiment, the distance LD between the positive plate electrode (100) and the negative plate electrode (102) of the LPP portion is defined by the thickness of the three layers (L2, L3, L4) between the plate electrodes. If one or more of these intermediate layers are thicker than expected, the distance (LD) between the side plate electrodes (100, 102) of the LPP portion will increase, which will reduce the capacitance achieved according to equation (1). On the other hand, the aforementioned increase in the thickness of one or more of these intermediate layers (L2 to L4) will also increase the width (VW) of the VPP portion, which effectively increases the area of ​​the electrodes in the VPP portion and thus increases the capacitance value of the VPP portion.

[0062] By appropriately determining the dimensions and combining the LPP and VPP sections, these changes in capacitance value at least compensate for each other's major shares. Changes in capacitance value due to variations in the thickness of each layer will affect the capacitance of both capacitor sections, but in opposite directions. The nominal capacitance values ​​of the LPP and VPP sections can be designed to meet the requirements of the desired total capacitance value, usable area, and consideration of edge capacitance effects. The nominal capacitance value refers to the capacitance value achieved through the nominal layer thickness and nominal lateral dimensions of the metallized portions of the two capacitor sections.

[0063] In the first embodiment, variations in the thickness of the metallization layers L1 and L5 where the electrodes of the LPP portion reside have no major effect on the capacitance of the LPP portion, but will affect the capacitance of the VPP portion. Although the effects of variations in the thickness of layers L1 and L5 cannot be compensated, this configuration can compensate for capacitance variations, which is sufficient in some applications.

[0064] To utilize the compensation effect, the VPP and LPP sections should be electrically combined so that the total achievable capacitance of the capacitor structure is limited by the capacitance of both the VPP and LPP sections. To maximize the achievable capacitance, and thus the achievable capacitance density, it is advantageous to couple the two capacitor sections in parallel. However, if the LPP and VPP sections are coupled in series, the same basic principle of compensation capacitance change applies.

[0065] The change in capacitance caused by the change in layer thickness Δt between the electrodes in the LPP section can be expressed mathematically as follows. The change in capacitance ΔC in the VPP section... vert This can be expressed using functions:

[0066]

[0067] The change in capacitance of the LPP section caused by the aforementioned change in layer thickness Δt can be expressed as a function:

[0068]

[0069] When the LPP and VPP sections are connected in parallel, the approximate effect of the change in distance LD Δt and thus the change in the width VW across the total capacitance can be expressed as a function:

[0070]

[0071] This simplified equation does not consider any changes in the edge capacitance. In the case of the series-coupled capacitor section, the combined effect of the changes Δt in distance LD and width VW on the total capacitance can therefore be expressed as a function:

[0072]

[0073] Figure 6 A schematic cross-section of a capacitor structure having a VPP portion and an LPP portion according to a second embodiment is shown. This capacitor structure differs from the first embodiment in that there are no through-holes between the plates or strips (200a to 200c, 202a to 202c) of the VPP portion. Most of the electric field in the VPP portion will occur between adjacent plates or strips residing on the same layer (i.e., 200a and 202a, 200b and 202b, and 200c and 202c). Changing the thickness of one or more intermediate layers (L2 to L4) between the electrodes of the LPP portion by varying the distance (LD) between the plate electrodes (100, 102) will result in a similar change in the effective width (VW) of the VPP portion, similar to the first embodiment. To implement a single VPP portion with two electrodes, the strips and plates (200a, 200b, 200c; 202a, 202b, 202c) of each electrode will be electrically connected to each other (not shown). This interconnection can be established in any part of the plate or strip, for example, at or near one end. Although the stacked plates or strips (200a, 200b, 200c; 202a, 202b, 202c) are electrically isolated by a dielectric layer for most of their length, they are therefore electrically coupled to form two electrodes of the VPP portion, and can therefore be considered a variation of the vertical parallel plate capacitor type, and thus can be referred to as the VPP portion. The mutually coupled stacked plates or strips (200a, 200b, 200c; 202a, 202b, 202c) can therefore be considered to form vertical planar electrodes with holes therein. Each stacked strip or plate has the same potential, and an electric field is formed between the stacked plate strip in one vertical plane and the plates or strips in the adjacent vertical plane. Compared to the first embodiment, this type or configuration will have a larger edge field effect. In this case, the capacitance of the VPP portion is based on two lateral electric fields between the opposite faces of the adjacent plates or strips and the edge field of the exposed edges of the plates or strips. The effect of edge capacitance can be considered in the design of the device to compensate for changes in layer thickness. Design problems related to edge capacitance are not the focus of this invention and are therefore not discussed in detail here, but they, as well as methods for designing capacitors that take edge capacitance into account, are well known to those skilled in the art. The total capacitance achieved with this type of electrode is slightly smaller than that achieved with a solid plate electrode.

[0074] Figure 7 A schematic cross-section of a capacitor structure having a VPP portion and an LPP portion according to a third embodiment is shown. Compared to the first embodiment, the VPP portion now has more than two vertical electrode fingers, which can be configured as finger-like interlaced electrode fingers, for example, in the form of... Figure 4aThe configuration shown has alternating polarities. Although four vertical electrode fingers are shown in this description, any number of vertical electrode fingers can be applied depending on the design. Figure 7 as well as Figure 4a and Figure 4b The finger-shaped cross VPP portion structure described herein is generally referred to as a VPP capacitor in this art, and in the context of this application, as a vertical parallel plate capacitor portion (VPP portion). The distance VD between different pairs of adjacent electrode fingers can be equal, but it can also vary depending on the design. To implement a single VPP portion, the electrode fingers can, for example, be connected to each other only at or near one end. According to another alternative, a third embodiment can also be implemented where there are no plurality of through holes (40) between the plates or strips of the electrode fingers in the VPP portion, as per [reference to...]. Figure 6 As explained. In order to implement a single VPP section, the strips and plates (200a, 200b, 200c; 202a, 202b, 202c) are electrically coupled to form two electrodes of the VPP section.

[0075] Figure 8 A simplified schematic cross-section of a capacitor structure having a VPP portion and an LPP portion according to a fourth embodiment is shown. In this embodiment, the VPP portion can remain substantially unchanged compared to the third embodiment, and any number of vertical electrode fingers can be applied according to the design. As shown in the first and second embodiments, the design options of this embodiment also include any number of finger-shaped interlaced vertical electrode fingers in a comb configuration or only two vertical plate electrodes. One plate electrode (100) of the LPP portion is disposed on the dielectric layer L6. This type of metal patterning configuration can be used in some currently available proprietary manufacturing processes. Furthermore, if the manufacturing process can form such a metallization structure on the main dielectric layer, the thickness of the electrode of the LPP portion disposed on the dielectric layer can be less than the thickness of the individual dielectric layers. If the thickness of the individual metallization layer (L5) varies due to the manufacturing process, this will affect the distance (LD) between the plate electrodes (100, 102) of the LPP portion and the width (VW) of the electrode of the VPP portion. Therefore, in addition to the changes in layers L2 to L4 included in the compensation schemes of the first to third embodiments, the change in the thickness of layer L5 will also affect physical quantities, and thus affect the capacitance values ​​of both the LPP capacitor portion and the VPP capacitor portion, but in the opposite direction. Therefore, this embodiment includes an additional layer (L5) in the overall capacitance compensation scheme, further improving the compensation capability compared to the previously proposed embodiments. Another variation of this embodiment adopts... Figure 6 The principle disclosed in the VPP section is without coupling the multiple through holes (40) of the plate or strip.

[0076] Figure 9A simplified schematic cross-section of a capacitor structure having a VPP portion and an LPP portion according to a fifth embodiment is shown. Compared to the fourth embodiment, the second plate electrode (102) of the LPP portion is disposed on the bottom dielectric layer (L0). This type of metallization pattern configuration can be implemented in some current or future proprietary manufacturing processes. If the thickness of the metallization layer L1 varies due to the manufacturing process, this will additionally affect both the distance (LD) between the two plate electrodes (100, 102) of the LPP portion and the width (VW) of the electrode of the VPP portion. Therefore, in addition to the changes in the thicknesses of layers L2 to L4, the effects of changes in the thicknesses of layers L1 and L5 will now also affect both the LPP portion and the VPP portion, but in the opposite direction. Therefore, this embodiment includes all possible layers (L1 to L5) that, when their thicknesses vary due to manufacturing tolerances, may affect the overall capacitance compensation scheme in this configuration. In other words, the distance LD between the electrodes of the LPP portion is equal to the width VW of the electrodes of the VPP portion, and any changes in distance (LD) and width (VW) due to changes in the thickness of one or more layers are also equal. Therefore, in equations (3) to (6), it can be assumed under this condition that Δt = ΔLD = ΔVW, in other words, Δt includes the thickness variations of all layers defining the width VW of the VPP portion. Compared to the first to fourth embodiments, the capacitance of the LPP portion is slightly lower because the two plate electrodes (100, 102) of the LPP portion are further apart from each other. This change can be compensated, for example, by slightly increasing the lateral area of ​​the plate electrodes (100, 102) of the LPP portion.

[0077] exist Figures 5 to 9 In all the embodiments shown, the electrodes of the LPP and VPP portions are preferably laterally configured in substantially different regions so that they do not overlap. Alternatively, the LPP and VPP portions may overlap to some extent in the lateral dimension, for example by configuring the LPP and VPP portions in L and / or T shapes, wherein the plate electrodes of the VPP portion form T-shaped or L-shaped rods and the plate electrodes of the LPP portion form arms or legs, as disclosed in priority application PCT / FI2019 / 050513. In this case, the LPP and VPP portions are effectively electrically coupled in parallel. Furthermore, the lateral overlap of the LPP and VPP portions may be implemented, for example, using modified L-shapes and / or T-shapes, wherein the rods are not attached to arms or legs. This configuration allows for both parallel and series coupling of the LPP and VPP portions.

[0078] Figure 10The diagram schematically illustrates the inter-coupling between a plurality of LPP and VPP sections. In this configuration, the total capacitance of the capacitor structure is obtained by combining all the combined capacitor sections, each of which is of one of these types, wherein each VPP section is coupled in parallel or series with an LPP section, and vice versa. This example includes two VPP sections (Cvert1, Cvert2) and two LPP sections (Clat1, Cvlat2), but any number of VPP and LPP sections can be used.

[0079] By utilizing both LPP and VPP sections in parallel and series coupling within the same capacitor structure, the capacitance accuracy of the capacitor structure can be further improved; in other words, compensation can be made for the variation in capacitance value caused by changes in layer thickness. When the LPP and VPP sections are coupled in series, the residual capacitance change after compensation through series coupling has the opposite polarity to the residual capacitance change after compensation through parallel coupling. By enabling compensation using parallel and series coupling within the same capacitor structure, the residual uncompensated variation in capacitance value can be further reduced. By using a single pair of LPP and VPP sections in parallel or series coupling, the accuracy of the capacitance value can be increased by significantly reducing the variation between the capacitance value and the nominal capacitance value. The accuracy of the obtained capacitance value can be further increased by including LPP and VPP sections in series and parallel coupling within the same capacitor structure. The best compensation effect is achieved when all layers affecting the capacitance value of the LPP and VPP sections are included in the compensation scheme. Layers of the VPP section not included in the compensation scheme may be the main factor in capacitance value variation. When designing capacitor structures intended to have accurate capacitance values, other types of manufacturing tolerances must also be considered, such as the inaccuracy of the lateral dimensions of the metallized patterns. A significant portion of the lateral dimensional inaccuracies in the capacitor structure according to the invention can be controlled by selecting the distance VD, in other words, the distance between adjacent vertical plate electrodes or electrode fingers.

[0080] Figure 11A top view showing a first non-limiting implementation example of a capacitor structure applying the inventive compensation principle described above. The LPP portion includes a first side plate electrode (100) coupled to a first electrical contact (60) and a second side plate electrode (102) coupled to a second electrical contact (62). The first side plate electrode (100) and the second side plate electrode (102) substantially overlap. The VPP portion includes a first vertical electrode (200) coupled to the first electrical contact (60) and a second vertical electrode (202) coupled to the second electrical contact (62). The VPP portions (200, 202) include a finger-like cross-comb structure. In this example, the electrical contact between the second vertical electrode (202) and the second electrical contact can be implemented via the second side plate electrode (102) at the same potential as the second vertical electrode (202). The LPP portions (100, 102) and the VPP portions (200, 202) are therefore coupled in parallel. In this example, the VPP portions (200, 202) are implemented in openings (210) formed in the other quadrilateral LPP portions (100, 102). Therefore, the electrodes of the LPP portions (100, 102) and the VPP portions (200, 202) do not overlap laterally.

[0081] Figure 12 A top view showing a second non-limiting implementation example of a capacitor structure applying the inventive compensation principle described above. The LPP portion includes a first side plate electrode (100) coupled to a first electrical contact (60) and a second side plate electrode (102) coupled to a second electrical contact (62). The first side plate electrode (100) and the second side plate electrode (102), which are hidden below other structures in this view, preferably have a quadrilateral shape. The VPP portion includes a first vertical electrode (200) coupled to the first electrical contact (60) and a second vertical electrode (202) coupled to the second electrical contact (62). The VPP portions (200, 202) include a finger-like cross-comb structure, wherein metallized coupling structures (70, 72) provide a connection between the electrode fingers of the respective electrodes (200, 202). These metallized coupling structures (70, 72) further electrically couple the electrodes of the LPP portions (100, 102) and VPP portions (200, 202) toward the first electrical contact (60) and the second electrical contact (62). In this example, the LPP portions (100, 102) and VPP portions (200, 202) are coupled in parallel. The VPP portions (200, 202) and LPP portions (100, 102) are placed side by side so that the plate electrodes of the LPP portions (100, 102) and VPP portions (200, 202) do not overlap laterally. For example, the metallized coupling structures (70, 72) and / or the first electrical contact (60) and the second electrical contact (62) can be redesigned to... Figure 12 The capacitor structure shown is redesigned with the VPP and LPP sections connected in series.

[0082] Figure 13a and Figure 13b Two different isometric perspective views are shown, illustrating a second non-limiting implementation example of a capacitor structure applying the inventive compensation principle described above. The electrode fingers of the first vertical electrode (200) are electrically coupled to each other at one end of the electrode fingers and further electrically coupled to the first electrical contact (60) via a metallized coupling pattern (70) disposed between the electrode and the first electrical contact (60). The electrode fingers of the second vertical electrode (202) are electrically coupled to each other via one or more metallized coupling patterns (72). These views show through-holes (42) for coupling the electrode fingers of the second vertical plate electrode (202) to the metallized coupling patterns (72).

[0083] In all the above designs, the shape and location of the first and second electrical contacts are design options. Electrical contacts for coupling to external circuit systems and / or semiconductor devices beneath the capacitor structure may, for example, be located on and / or beneath the capacitor structure, and / or even in the middle layer of the layered structure.

[0084] It will be apparent to those skilled in the art that the basic concept of this invention can be implemented in various ways as technology advances. Therefore, this invention and its embodiments are not limited to the examples described above, but can be varied within the scope of the claims.

Claims

1. A capacitor structure implemented as a layered structure comprising a plurality of alternating dielectric layers and metallization layers, said metallization layers comprising a metal pattern and a dielectric material. in, The capacitor structure includes: At least one lateral parallel plate capacitor portion (LPP portion), the at least one LPP portion comprising two substantially parallel first electrodes formed by metal patterns in two metallization layers, the two first electrodes being separated from each other by a plurality of alternating layers of dielectric material, and At least one vertical parallel plate capacitor portion (VPP portion), the at least one VPP portion comprising two second electrodes, each second electrode comprising a plurality of stacked plates or strips, each stacked plate or strip being patterned in one of the metallization layers, wherein the plurality of stacked plates or strips of each second electrode are electrically coupled to each other through vias, and A first electrical contact and a second electrical contact are coupled to the at least one VPP portion, wherein each of the two second electrodes in the at least one VPP portion is coupled to one of the first electrical contact and the second electrical contact. The capacitor structure is characterized in that the at least one LPP portion is electrically coupled to the at least one VPP portion via at least one of the first electrical contact and the second electrical contact to form the capacitor structure, and wherein the change in capacitance of the capacitor structure caused by the change in capacitance of the at least one LPP portion due to the change in the thickness of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes is at least partially compensated by the opposite change in capacitance of the capacitor structure caused by the change in capacitance of the at least one VPP portion, wherein the change in the thickness of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes results in a difference in the distance between the two first electrodes in the vertical dimension relative to a nominal value, the change in capacitance of the at least one VPP portion is caused by the difference in the width of the two second electrodes in the vertical dimension relative to a nominal value due to the change in the thickness of the dielectric material in at least one of the plurality of alternating layers, and the at least one VPP portion is separated from the at least one LPP portion.

2. The capacitor structure according to claim 1, wherein, The at least one LPP portion and the at least one VPP portion are electrically coupled to each other in parallel or in series.

3. The capacitor structure according to claim 1 or 2, comprising at least two LPP sections and at least two VPP sections, wherein, At least one LPP portion and at least one VPP portion are electrically coupled in parallel to each other, and wherein at least another LPP portion and at least another VPP portion are electrically coupled in series to each other.

4. The capacitor structure according to claim 1 or 2, in, The two second electrodes include a plurality of electrode fingers, each electrode finger being formed by a plurality of stacked plates or strips. The electrode fingers of the two second electrodes form a comb-like structure in the form of interlaced finger-like electrode fingers, wherein adjacent electrode fingers have alternating polarities, and / or The stacked plates or strips are electrically connected to each other through one or more conductive vias that pass through each dielectric material layer that separates two adjacent metallization layers comprising the stacked plates or strips.

5. The capacitor structure according to claim 1 or 2, wherein, The two first electrodes reside on a metallization layer of the capacitor structure, which includes a top and bottom plate or strip of the second electrode, the top and bottom plate or strip defining the width of the second electrode in the vertical dimension.

6. The capacitor structure according to claim 1 or 2, wherein One of the two first electrodes resides on a layer of the capacitor structure above a metallization layer in the vertical dimension, the metallization layer comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension, or One of the two first electrodes resides on a layer of the capacitor structure below a metallization layer in the vertical dimension, the metallization layer comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension.

7. The capacitor structure according to claim 1 or 2, wherein, One of the two first electrodes resides on a layer of the capacitor structure above a metallization layer of the capacitor structure, the metallization layer comprising a plate or strip of the second electrode defining an upper limit of the width of the second electrode in the vertical dimension; and the other of the two first electrodes resides on a layer of the capacitor structure below a metallization layer of the capacitor structure, the metallization layer comprising a plate or strip of the second electrode defining a lower limit of the width of the second electrode in the vertical dimension.

8. The capacitor structure according to claim 7, wherein, The vertical distance between adjacent surfaces of the two first electrodes is defined by the thickness of a layer that defines the width of the two second electrodes in the vertical dimension.

9. An electronic device comprising a semiconductor device structure and a capacitor structure according to any one of claims 1 to 8 disposed on top of said semiconductor device structure.

10. The electronic device of claim 9, further comprising one or more intermediate layers on top of the semiconductor device structure, and wherein... The capacitor structure is arranged on top of one or more intermediate layers.

11. A method for manufacturing a capacitor structure, said capacitor structure being a layered structure comprising a plurality of alternating dielectric layers and metallization layers, said metallization layer comprising a metal pattern and a dielectric material. in, The method includes performing the following steps during the manufacturing process: At least one lateral parallel plate capacitor portion (LPP portion) comprising two substantially parallel first electrodes is produced by forming two metal patterns in two different metallization layers of the capacitor structure, wherein the two first electrodes are separated by a plurality of the alternating layers of dielectric material. A vertical parallel plate capacitor portion (VPP portion) is generated, comprising two second electrodes, wherein each second electrode comprises a plurality of stacked plates or strips in a plurality of said metallization layers, wherein the stacked plates or strips of each second electrode are electrically coupled to each other through vias. A first electrical contact and a second electrical contact are generated, coupled to the at least one VPP portion, wherein each of the two second electrodes in the at least one VPP portion is coupled to one of the first electrical contact and the second electrical contact. The at least one LPP portion is electrically coupled to the at least one VPP portion via at least one of the first and second electrical contacts to form the capacitor structure. The characteristic feature is that the change in capacitance of the capacitor structure caused by the change in capacitance of the at least one LPP portion due to the change in the thickness of the dielectric material in at least one of the plurality of alternating layers separating the two first electrodes is at least partially compensated by the opposite change in capacitance of the capacitor structure caused by the change in capacitance of the at least one VPP portion, wherein the change in the thickness of the dielectric material in the at least one of the plurality of alternating layers separating the two first electrodes results in a difference in the distance between the two first electrodes in the vertical dimension relative to a nominal value, the change in capacitance of the at least one VPP portion is caused by the difference in the width of the two second electrodes in the vertical dimension relative to a nominal value due to the change in the thickness of the dielectric material in the at least one of the plurality of alternating layers, and the at least one VPP portion is separated from the at least one LPP portion.

12. A method for manufacturing an electronic device, the method comprising: Manufacturing semiconductor device structures; The method is characterized in that it further includes: The capacitor structure according to any one of claims 1 to 8 is manufactured on top of the semiconductor device structure using the method according to claim 11.

13. The method of claim 12, further comprising: One or more intermediate layers are fabricated on top of the semiconductor device structure; as well as The capacitor structure according to any one of claims 1 to 8 is manufactured on top of one or more intermediate layers using the method according to claim 11.

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