Light-emitting element, method for manufacturing light-emitting element, and display device

Abstract

Provided are a light-emitting element, a method for manufacturing the light-emitting element, and a display device. The light-emitting element includes: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; and an electrode layer disposed on the second semiconductor layer and including a first surface and a second surface facing the first surface and in contact with the second semiconductor layer. The electrode layer includes a first protrusion pattern in which at least a portion of the first surface protrudes.

Description

Technical Field

[0001] The present invention relates to a light emitting element, a method for manufacturing the light emitting element, and a display device. Background Art

[0002] The importance of display devices is increasing with the development of multimedia. Therefore, various types of display devices such as organic light emitting display devices and liquid crystal display (LCD) devices are being used.

[0003] A display panel, such as an organic light-emitting display panel or an LCD panel, is a device included in a display device to display an image. Among these display panels, a light-emitting element may be provided as a light-emitting display panel, and examples of light-emitting diodes (LEDs) include organic LEDs (OLEDs) using organic materials as fluorescent materials and inorganic LEDs using inorganic materials as fluorescent materials.

[0004] Inorganic LEDs, which use inorganic semiconductors as fluorescent materials, are durable even in high-temperature environments and have higher blue light efficiency than organic LEDs. While existing inorganic LED manufacturing processes have been cited as limitations, a transfer method using dielectrophoresis (DEP) has been developed. Consequently, research into inorganic LEDs with greater durability and efficiency than organic LEDs is ongoing. Summary of the Invention

[0005] Technical issues

[0006] Aspects of the disclosure provide a light emitting element in which two end surfaces have different roughnesses and patterns are formed on the end surfaces, and a method for manufacturing the same.

[0007] The disclosed aspects provide a display device including a plurality of light emitting elements, each light emitting element having a different pattern formed on an end surface.

[0008] It should be noted that the disclosed aspects are not limited thereto, and other aspects not mentioned here will be apparent to those of ordinary skill in the art from the following description.

[0009] Technical Solution

[0010] According to a disclosed embodiment, a light-emitting element includes: a first semiconductor layer and a second semiconductor layer; an active layer, arranged between the first semiconductor layer and the second semiconductor layer; and an electrode layer, arranged on the second semiconductor layer and including a first surface and a second surface facing the first surface and contacting the second semiconductor layer, wherein at least one of the first surface and the second surface of the electrode layer includes a protrusion pattern protruding from a portion thereof.

[0011] The protrusion pattern may include: a first protrusion; a second protrusion spaced apart from the first protrusion; and a recess between the first protrusion and the second protrusion.

[0012] The second protrusion may surround the first protrusion.

[0013] The protrusion pattern may further include a third protrusion spaced apart from the first protrusion and the second protrusion.

[0014] The third protrusion may be formed to surround an outer surface of the second protrusion, and a recess may be formed between the second protrusion and the third protrusion.

[0015] The first protrusion may include a region having the same width as that of the second protrusion.

[0016] The first protrusion may include a region having a width equal to a distance between the first protrusion and the second protrusion.

[0017] The protrusion pattern may include a first protrusion pattern formed on the first surface, and the light emitting element may extend in one direction and include a first end surface on which the first protrusion pattern is formed and a second end surface on which the surface of the first semiconductor layer is formed.

[0018] The first end surface and the second end surface may have different roughnesses.

[0019] The light emitting element may further include an insulating film at least partially surrounding side surfaces of the first and second semiconductor layers and at least a side surface of the active layer.

[0020] The electrode layer may include a second protrusion pattern formed on the second surface to contact the second semiconductor layer, and at least a portion of a surface of the second semiconductor layer contacting the second surface of the electrode layer may be recessed to contact protrusions of the second protrusion pattern.

[0021] A protrusion pattern may also be formed on the first surface.

[0022] According to a disclosed embodiment, a method for manufacturing a light-emitting element includes the following steps: providing a semiconductor structure formed on a substrate; and forming a plurality of element rods by etching the semiconductor structure, each element rod including a protrusion pattern protruding from at least a portion of an upper surface, wherein different protrusion patterns are formed in different regions of the semiconductor structure.

[0023] The steps of forming the multiple element rods may include: forming a first pattern layer including first mask patterns spaced apart from each other on a semiconductor structure; forming a semiconductor crystal by etching the semiconductor structure along areas between the first mask patterns spaced apart from each other; forming a second pattern layer including second mask patterns spaced apart from each other on the semiconductor crystal; and forming the multiple element rods including protrusion patterns by partially etching the upper surface of the semiconductor crystal along areas where the second mask patterns are spaced apart from each other.

[0024] After forming the insulating film around the outer circumferential surface of each of the semiconductor crystals, the forming step of the second pattern layer may be performed.

[0025] The semiconductor structure may include a first region and a second region different from the first region, and the plurality of element bars may include a first element bar formed in the first region and a second element bar formed in the second region.

[0026] In the first pattern layer, the first mask pattern disposed in the first region and the first mask pattern disposed in the second region may have the same shape.

[0027] The first element rod and the second element rod may have the same diameter.

[0028] In the second pattern layer, the second mask pattern disposed in the first region and the second mask pattern disposed in the second region may have different shapes.

[0029] The first protrusion pattern formed on the upper surface of the first element bar may have a shape different from a shape of the second protrusion pattern formed on the upper surface of the second element bar.

[0030] The step of forming the multiple element rods may include: forming a third mask layer including third mask patterns spaced apart from each other on the semiconductor structure, forming the protrusion pattern by partially etching the upper surface of the semiconductor structure along an area where the third mask patterns are spaced apart from each other, forming a fourth mask layer including fourth mask patterns spaced apart from each other on the semiconductor structure, and forming the multiple element rods by etching the semiconductor structure along an area between the fourth mask patterns spaced apart from each other.

[0031] The first region and the second region may have different amounts of luminescence.

[0032] According to a disclosed embodiment, a display device includes: a first electrode and a second electrode spaced apart from the first electrode; and at least one light-emitting element, disposed between the first electrode and the second electrode and each light-emitting element including a pattern portion formed on an end surface, wherein each of the at least one light-emitting element includes a first semiconductor layer and a second semiconductor layer; an active layer, disposed between the first semiconductor layer and the second semiconductor layer; and an electrode layer, disposed on the second semiconductor layer and including a protrusion pattern protruding from at least a portion of its surface.

[0033] The protrusion pattern may include: a first protrusion; a second protrusion spaced apart from the first protrusion; and a recess between the first protrusion and the second protrusion.

[0034] The second protrusion may surround the first protrusion.

[0035] The at least one light emitting element may include a first light emitting element and a second light emitting element, the first light emitting element including a first protrusion pattern and the second light emitting element including a second protrusion pattern different from the first protrusion pattern.

[0036] The number of protrusions included in the first protrusion pattern may be different from the number of protrusions included in the second protrusion pattern.

[0037] A width of each protrusion included in the first protrusion pattern may be different from a width of each protrusion included in the second protrusion pattern.

[0038] A first end of the at least one light emitting element may be electrically connected to the first electrode, and a second end of the at least one light emitting element may be electrically connected to the second electrode.

[0039] The electrode layer of each light emitting element may be electrically connected to the first electrode, and the first semiconductor layer may be electrically connected to the second electrode.

[0040] The display device may further include: a first contact electrode contacting a first end of the at least one light emitting element and the first electrode; and a second contact electrode contacting a second end of the at least one light emitting element and the second electrode.

[0041] The first contact electrode may contact the electrode layer of each light emitting element, and the second contact electrode may contact the first semiconductor layer.

[0042] Details of other embodiments are included in the detailed description and accompanying drawings.

[0043] Beneficial effects

[0044] In the method for manufacturing a light-emitting element according to an embodiment, a light-emitting element having a protrusion pattern can be manufactured by two etching processes for etching a semiconductor structure. The light-emitting element can include different protrusion patterns, and the protrusion pattern can be used to identify the position where the light-emitting element is formed in the semiconductor structure. Therefore, when there are differences in the luminous properties of the manufactured light-emitting elements, the protrusion pattern can be used to identify the position where the light-emitting element is formed in the semiconductor structure, and the luminous properties at these positions can be controlled.

[0045] The display device according to the embodiment may include light emitting elements having different protrusion patterns to reduce differences in light emitting characteristics and may have uniform light emitting characteristics in each pixel.

[0046] The effects according to the embodiments are not limited to the above-exemplified contents, and more various effects are included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 is a schematic plan view of a display device according to an embodiment;

[0048] Figure 2 is a schematic plan view of a pixel of a display device according to an embodiment;

[0049] Figure 3 yes Figure 2 A plan view of a sub-pixel;

[0050] Figure 4 It is along Figure 3 sectional views taken along lines Xa-Xa', Xb-Xb', and Xc-Xc';

[0051] Figure 5 is a cross-sectional view of a portion of a display device according to an embodiment;

[0052] Figure 6 is a schematic diagram of a light emitting element according to an embodiment;

[0053] Figure 7 It is along Figure 6 A sectional view taken along line VI-VI';

[0054] Figure 8 It is along Figure 3 A sectional view taken along line VII-VII';

[0055] Figure 9 is a flowchart illustrating a method for manufacturing a light emitting element according to an embodiment;

[0056] Figures 10 to 25 is a schematic diagram illustrating a process of manufacturing a light emitting element according to an embodiment;

[0057] Figures 26 to 28 is a plan view showing the shape of a second pattern layer according to an embodiment;

[0058] Figure 29 and Figure 30 is a cross-sectional view showing part of a process for manufacturing a light emitting element according to an embodiment;

[0059] Figure 31a and Figure 31b is a cross-sectional view of a light emitting element according to an embodiment;

[0060] Figure 32 is a schematic diagram of a light emitting element according to an embodiment;

[0061] Figure 33 It is along Figure 32 A sectional view taken along line VI-VI';

[0062] Figure 34 is a plan view of a sub-pixel of a display device according to an embodiment; and

[0063] Figure 35 is a plan view of a pixel of a display device according to an embodiment. DETAILED DESCRIPTION

[0064] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0065] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0066] It will be understood that although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the invention. Similarly, the second element may also be referred to as the first element.

[0067] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0068] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0069] Reference Figure 1The display device 10 displays a moving image or a still image. The display device 10 may refer to any electronic device that provides a display screen. Examples of the display device 10 may include a television, a notebook computer, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smartwatch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, and a video camera, all of which provide a display screen.

[0070] The display device 10 includes a display panel that provides a display screen. Examples of display panels include light-emitting diode (LED) display panels, organic light-emitting display panels, quantum dot light-emitting display panels, plasma display panels, and field emission display panels. The following describes a case where a light-emitting diode (LED) display panel is used as an example of a display panel, but the present disclosure is not limited to this case. Other display panels may also be used as long as the same technical spirit is applicable.

[0071] The shape of the display device 10 may be variously modified. For example, the display device 10 may have various shapes such as a horizontally long rectangle, a vertically long rectangle, a square, a quadrilateral with rounded corners (vertices), other polygons, and a circle. The shape of the display area DA of the display device 10 may also be similar to the overall shape of the display device 10. Figure 1 , the display device 10 and the display area DA have a horizontally long rectangular shape.

[0072] The display device 10 may include a display area DA and a non-display area NDA. The display area DA may be an area where images can be displayed, and the non-display area NDA may be an area where images are not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as an inactive area.

[0073] The display area DA may generally occupy the center of the display device 10. The display area DA may include a plurality of pixels PX. The pixels PX may be arranged in a matrix. In a plan view, each of the pixels PX may be rectangular or square. However, the disclosure is not limited thereto, and each of the pixels PX may also have a diamond shape with each side tilted relative to a direction. Each of the pixels PX may display a specific color by including one or more light-emitting elements 300 that emit light in a specific wavelength band.

[0074] Figure 2 is a schematic plan view of a pixel of a display device according to an embodiment. Figure 3 yes Figure 2 Plan view of a sub-pixel.

[0075] Reference Figure 2 and Figure 3 , each of the pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit light of a first color, the second sub-pixel PX2 may emit light of a second color, and the third sub-pixel PX3 may emit light of a third color. The first color may be blue, the second color may be green, and the third color may be red. However, the disclosure is not limited thereto, and the sub-pixels PXn may also emit light of the same color. In addition, although in Figure 2 The pixel PX includes three sub-pixels PXn (n=1, 2, 3), but the disclosure is not limited thereto, and the pixel PX may also include more sub-pixels PXn.

[0076] Each sub-pixel PXn of the display device 10 may include an area defined as an emission area EMA. The first sub-pixel PX1 may include a first emission area EMA1, the second sub-pixel PX2 may include a second emission area EMA2, and the third sub-pixel PX3 may include a third emission area EMA3. The emission area EMA may be defined as an area where the light-emitting element 300 included in the display device 10 is provided to emit light of a specific wavelength band. Each of the light-emitting elements 300 may include an active layer 330 (see FIG. 1 ). Figure 4 ), and the active layer 330 can emit light of a specific wavelength band without directionality. That is, the light emitted from the active layer 330 of each light emitting element 300 can be irradiated in the lateral direction of the light emitting element 300 and toward both ends of the light emitting element 300. The emission area EMA of each sub-pixel PXn may include a region in which the light emitting element 300 is provided and a region adjacent to the light emitting element 300 and from which the light emitted from the light emitting element 300 is output. In addition, the disclosure is not limited thereto, and the emission area EMA may also include a region from which the light emitted from the light emitting element 300 is output after being reflected or refracted by other components. A plurality of light emitting elements 300 may be provided in each sub-pixel PXn, and the region in which the light emitting element 300 is provided and the region adjacent to the region may form the emission area EMA.

[0077] Although not shown in the drawings, each sub-pixel PXn of the display device 10 may include a non-emission region defined as a region other than the emission region EMA. The non-emission region may be a region in which the light emitting element 300 is not provided and from which no light is output because light emitted from the light emitting element 300 does not reach the region.

[0078] Each sub-pixel PXn of the display device 10 may include a plurality of electrodes 210 and 220, a light emitting element 300, a plurality of contact electrodes 260, a plurality of inner banks 410 and 420 (see FIG. Figure 4 ), outer bank 430 and one or more insulating layers 510, 520 and 550 (see Figure 4).

[0079] Electrodes 210 and 220 may be electrically connected to light emitting element 300 and may receive a predetermined voltage so that light emitting element 300 may emit light of a specific wavelength band. Furthermore, at least a portion of each of electrodes 210 and 220 may be utilized to form an electric field in subpixel PXn to align light emitting element 300.

[0080] The electrodes 210 and 220 may include a first electrode 210 and a second electrode 220. In an embodiment, the first electrode 210 may be a separate pixel electrode for each sub-pixel PXn, and the second electrode 220 may be a common electrode commonly connected along each sub-pixel PXn. Either the first electrode 210 or the second electrode 220 may be an anode of the light-emitting element 300, while the other may be a cathode of the light-emitting element 300. However, the present disclosure is not limited thereto, and the opposite may also be true.

[0081] Each of the first and second electrodes 210 and 220 may include an electrode stem portion 210S or 220S extending in a first direction DR1 and at least one electrode branch portion 210B or 220B extending and branching from the electrode stem portion 210S or 220S in a second direction DR2 intersecting the first direction DR1 .

[0082] The first electrode 210 may include a first electrode stem portion 210S extending in the first direction DR1 and at least one first electrode branch portion 210B branched from the first electrode stem portion 210S and extending in the second direction DR2 .

[0083] The first electrode stem portion 210S of any one pixel may have both ends that terminate between sub-pixels PXn and are spaced apart from the ends of adjacent first electrode stem portions 210S, but may be located on substantially the same straight line as the first electrode stem portions 210S of adjacent sub-pixels in the same row (e.g., adjacent in the first direction DR1). Since the both ends of the first electrode stem portion 210S respectively disposed in the sub-pixels PXn are spaced apart from each other, different electrical signals can be transmitted to each first electrode branch portion 210B, and each first electrode branch portion 210B can be driven individually.

[0084] The first electrode branch portion 210B may branch from at least a portion of the first electrode stem portion 210S and extend in the second direction DR2 to terminate at a position spaced apart from the second electrode stem portion 220S facing the first electrode stem portion 210S.

[0085] The second electrode 220 may include a second electrode trunk portion 220S extending in the first direction DR1 and spaced apart from the first electrode trunk portion 210S in the second direction DR2 so as to face the first electrode trunk portion 210S, and a second electrode branch portion 220B branching from the second electrode trunk portion 220S and extending in the second direction DR2. The other end of the second electrode trunk portion 220S may be connected to the second electrode trunk portion 220S of another subpixel PXn adjacent in the first direction DR1. That is, unlike the first electrode trunk portion 210S, the second electrode trunk portion 220S may extend in the first direction DR1 to intersect the subpixel PXn. The second electrode trunk portion 220S intersecting the subpixel PXn may be connected to a peripheral portion of the display area DA in which each pixel PX or subpixel PXn is provided, or to a portion extending in one direction in the non-display area NDA.

[0086] The second electrode branch portion 220B may be spaced apart from the first electrode branch portion 210B to face the first electrode branch portion 210B, and may terminate at a position spaced apart from the first electrode trunk portion 210S. In each subpixel PXn, the second electrode branch portion 220B may be connected to the second electrode trunk portion 220S, and one end in the extension direction may be spaced apart from the first electrode trunk portion 210S.

[0087] The first electrode 210 and the second electrode 220 may be electrically connected to the circuit element layer PAL (see FIG. 1 ) of the display device 10 through contact holes (eg, a first electrode contact hole CNTD and a second electrode contact hole CNTS), respectively. Figure 4 In the accompanying drawings, the first electrode contact hole CNTD is formed in the first electrode trunk portion 210S of each subpixel PXn, and only one second electrode contact hole CNTS is formed in one second electrode trunk portion 220S that passes through the subpixel PXn. However, the disclosure is not limited thereto. In some cases, the second electrode contact hole CNTS may also be formed in each subpixel PXn.

[0088] Although two first electrode branch portions 210B are provided in each sub-pixel PXn in the drawings, and one second electrode branch portion 220B is provided between the two first electrode branch portions 210B, the disclosure is not limited thereto. In addition, the first electrode 210 and the second electrode 220 do not have to extend in one direction, and may also be provided in various structures. For example, the first electrode 210 and the second electrode 220 may be partially bent or folded, or either of the first electrode 210 and the second electrode 220 may surround the other electrode. There is no particular limitation on the structure or shape in which the first electrode 210 and the second electrode 220 are provided, as long as the first electrode 210 and the second electrode 220 are at least partially spaced apart to face each other so that a space in which the light-emitting element 300 is to be provided may be formed between the first electrode 210 and the second electrode 220.

[0089] In addition, in some embodiments, the electrode stem portions 210S and 220S may be omitted from the first electrode 210 and the second electrode 220, respectively. In each subpixel PXn, the first electrode 210 and the second electrode 220 may extend in only one direction and may be spaced apart from each other. This will be described with reference to another embodiment.

[0090] The banks 410, 420, and 430 may include an outer bank 430 disposed at the boundary between the sub-pixels PXn and inner banks 410 and 420 disposed adjacent to the center of each sub-pixel PXn and below the electrodes 210 and 220, respectively. Although the inner banks 410 and 420 are not shown in the drawings, the first inner bank 410 and the second inner bank 420 may be disposed below the first electrode branch portion 210B and the second electrode branch portion 220B, respectively. This will be described later with reference to other drawings.

[0091] The outer bank 430 may be provided at the boundary between the sub-pixels PXn. The respective ends of the plurality of first electrode trunk portions 210S may be spaced apart from each other by the outer bank 430. The outer bank 430 may extend in the second direction DR2 to be located at the boundary between the sub-pixels PXn arranged in the first direction DR1. However, the disclosure is not limited thereto, and the outer bank 430 may also extend in the first direction DR1 to be located at the boundary between the sub-pixels PXn arranged in the second direction DR2. The outer bank 430 may include the same material as the inner banks 410 and 420 and may be formed simultaneously with the inner banks 410 and 420 in a single process.

[0092] The light emitting element 300 may be provided between the first electrode 210 and the second electrode 220. One end of each light emitting element 300 may be electrically connected to the first electrode 210, and the other end may be electrically connected to the second electrode 220. The light emitting element 300 may be electrically connected to the first electrode 210 and the second electrode 220, respectively, through contact electrodes 260 to be described later.

[0093] The light-emitting elements 300 may be spaced apart from each other and may be aligned substantially parallel to each other. There is no particular limitation on the gaps between the light-emitting elements 300. In some cases, a plurality of light-emitting elements 300 may be arranged adjacent to each other to form a group, and a plurality of other light-emitting elements 300 may form a group at a certain distance from the above group, or may be positioned and aligned in a direction having an uneven density. In addition, in an embodiment, the light-emitting element 300 may extend in one direction, and the direction in which each electrode (e.g., the first electrode branch portion 210B and the second electrode branch portion 220B) extends and the direction in which the light-emitting element 300 extends may be substantially perpendicular to each other. However, the disclosure is not limited thereto, and the light-emitting element 300 may also extend in a direction that is not perpendicular but inclined relative to the direction in which the first electrode branch portion 210B and the second electrode branch portion 220B extend.

[0094] The light-emitting element 300 according to the embodiment may include an active layer 330 including different materials to emit light of different wavelength bands to the outside. The display device 10 according to the embodiment may include a light-emitting element 300 that emits light of different wavelength bands. In the display device 10, the light-emitting element 300 provided in the sub-pixel PXn may include an active layer 330 having the same structure but emitting different light. The light-emitting element 300 of the first sub-pixel PX1 may include an active layer 330 that emits first light L1 (not shown) whose central wavelength band is a first wavelength. The light-emitting element 300 of the second sub-pixel PX2 may include an active layer 330 that emits second light L2 (not shown) whose central wavelength band is a second wavelength. The light-emitting element 300 of the third sub-pixel PX3 may include an active layer 330 that emits third light L3 (not shown) whose central wavelength band is a third wavelength.

[0095] Thus, first light L1 may be emitted from the first subpixel PX1, second light L2 may be emitted from the second subpixel PX2, and third light L3 may be emitted from the third subpixel PX3. In some embodiments, the first light L1 may be blue light having a central wavelength in the range of 450 nm to 495 nm, the second light L2 may be green light having a central wavelength in the range of 495 nm to 570 nm, and the third light L3 may be red light having a central wavelength in the range of 620 nm to 750 nm.

[0096] However, the present disclosure is not limited thereto. The first light L1, the second light L2, and the third light L3 may be lights of different colors or lights of the same color, and the central wavelengths of the first light L1, the second light L2, and the third light L3 may also be different from the above ranges. In addition, in some cases, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include the same type of light emitting element 300 to emit light of substantially the same color.

[0097] As shown in the drawings, the light emitting element 300 provided in each sub-pixel PXn may include a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303 provided between the first electrode branch portion 210B and the second electrode branch portion 220B. The process of manufacturing the light emitting element 300 may include etching the substrate 1000 (see FIG. 1 ) in one direction. Figure 10 ) on the semiconductor structure 3000 (see Figure 11 The semiconductor structure 3000 may include an active layer 3300 having different compositions depending on the position, and the wavelengths of light emitted from the active layer 3300 may differ. To minimize differences in light emitted from the light-emitting element 300, it may be necessary to control the composition ratio of the active layer 3300 according to the position in the semiconductor structure 3000.

[0098] The method for manufacturing the light-emitting element 300 according to the embodiment may include forming different patterns according to the position in the active layer 3300. Therefore, the manufactured light-emitting element 300 may include different patterns on its end surface, and the position where the light-emitting element 300 is formed in the semiconductor structure 3000 can be identified by the pattern. In order to adjust the emission characteristics of light emitted from some light-emitting elements 300, the composition ratio at a specific position in the semiconductor structure 3000 can be adjusted by the pattern of the light-emitting element 300. The display device 10 according to the embodiment may include light-emitting elements 300 having different patterns, for example, the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303. The pattern of the light-emitting element 300 will be described later.

[0099] Although not in Figure 2 and Figure 3 , but the display device 10 may include a second insulating layer 510 at least partially covering the first electrode 210 and the second electrode 220 .

[0100] The second insulating layer 510 may be provided in each sub-pixel PXn of the display device 10. The second insulating layer 510 may substantially completely cover each sub-pixel PXn, or may extend to other adjacent sub-pixels PXn. The second insulating layer 510 may at least partially cover the first electrode 210 and the second electrode 220. Figure 2 and Figure 3 , but the second insulating layer 510 may be provided to partially expose the first electrode 210 and the second electrode 220 , specifically, partially expose the first electrode branch portion 210B and the second electrode branch portion 220B.

[0101] At least a portion of each of the contact electrodes 260 may extend in one direction. The contact electrodes 260 may contact the light emitting element 300 and the electrodes 210 and 220 , and the light emitting element 300 may receive electrical signals from the first and second electrodes 210 and 220 through the contact electrodes 260 .

[0102] The contact electrode 260 may include a first contact electrode 261 and a second contact electrode 262. The first contact electrode 261 and the second contact electrode 262 may be disposed on the first electrode branch portion 210B and the second electrode branch portion 220B, respectively.

[0103] The first contact electrode 261 may be provided on the first electrode 210 or the first electrode branch portion 210B to extend in the second direction DR2. The first contact electrode 261 may contact one end of each of the light-emitting elements 300. In addition, the first contact electrode 261 may contact the first electrode 210 that is exposed due to the absence of the second insulating layer 510 provided on the first electrode 210. Therefore, the light-emitting element 300 may be electrically connected to the first electrode 210 through the first contact electrode 261.

[0104] The second contact electrode 262 may be disposed on the second electrode 220 or the second electrode branch portion 220B to extend in the second direction DR2. The second contact electrode 262 may be spaced apart from the first contact electrode 261 in the first direction DR1. The second contact electrode 262 may contact the other end of each of the light-emitting elements 300. Furthermore, the second contact electrode 262 may contact the second electrode 220, which is exposed due to the absence of the second insulating layer 510 on the second electrode 220. Thus, the light-emitting element 300 may be electrically connected to the second electrode 220 via the second contact electrode 262. Although two first contact electrodes 261 and one second contact electrode 262 are disposed in one subpixel PXn in the drawings, the present disclosure is not limited thereto. The number of first contact electrodes 261 and second contact electrodes 262 may vary depending on the number of first electrodes 210 and second electrodes 220 or the number of first electrode branch portions 210B and second electrode branch portions 220B disposed in each subpixel PXn.

[0105] In some embodiments, the width of the first contact electrode 261 and the second contact electrode 262 measured in one direction can be greater than the width of the first electrode 210 and the second electrode 220, or the width of the first electrode branch portion 210B and the second electrode branch portion 220B, respectively, measured in that direction. Each of the first contact electrode 261 and the second contact electrode 262 can cover a side surface of the first electrode 210 or the second electrode 220, or a side surface of the first electrode branch portion 210B or the second electrode branch portion 220B. However, the disclosure is not limited thereto. In some cases, each of the first contact electrode 261 and the second contact electrode 262 can cover only one side of the first electrode branch portion 210B or the second electrode branch portion 220B.

[0106] In addition to the second insulating layer 510, the display device 10 may include a circuit element layer PAL located below each of the electrodes 210 and 220 and a third insulating layer 520 (see FIG. 5 ) at least partially covering each electrode 210 or 220 and the light emitting element 300. Figure 4 ) and passivation layer 550 (see Figure 4 ). Now, refer to Figure 4 The structure of the display device 10 is described in detail.

[0107] Figure 4 It is along Figure 3 Cross-sectional views taken along lines Xa-Xa', Xb-Xb' and Xc-Xc'.

[0108] Figure 4 Only the cross section of the first subpixel PX1 is shown, but the same illustration can be applied to other pixels PX or subpixels PXn. Figure 4 A cross section spanning one end and the other end of the light emitting element 300 provided in the first sub-pixel PX1 is shown.

[0109] Combine Figure 2 and Figure 3 Reference Figure 4 The display device 10 may include a circuit element layer PAL and a light emitting layer EML. The circuit element layer PAL may include a substrate 110, a buffer layer 115, a light blocking layer BML, a first transistor 120, a second transistor 140, and the like. The light emitting layer EML may include a plurality of electrodes 210 and 220 disposed on the first transistor 120 and the second transistor 140, a light emitting element 300, a plurality of insulating layers 510, 520, and 550, and the like.

[0110] The substrate 110 may be an insulating substrate. The substrate 110 may be made of an insulating material such as glass, quartz, or a polymer resin. In addition, the substrate 110 may be a rigid substrate, but may also be a flexible substrate that can be bent, folded, or rolled.

[0111] The light blocking layer BML may be provided on the substrate 110. The light blocking layer BML may include a first light blocking layer BML1 and a second light blocking layer BML2. The first light blocking layer BML1 may be electrically connected to a first drain electrode 123 of a first transistor 120, which will be described later. The second light blocking layer BML2 may be electrically connected to a second drain electrode 143 of a second transistor 140.

[0112] The first light-blocking layer BML1 and the second light-blocking layer BML2 overlap the first active material layer 126 of the first transistor 120 and the second active material layer 146 of the second transistor 140, respectively. The first light-blocking layer BML1 and the second light-blocking layer BML2 may include a light-blocking material to prevent light from entering the first active material layer 126 and the second active material layer 146. For example, the first light-blocking layer BML1 and the second light-blocking layer BML2 may be made of an opaque metal material that blocks the transmission of light. However, the present disclosure is not limited thereto. In some cases, the light-blocking layer BML may be omitted.

[0113] The buffer layer 115 is disposed on the light blocking layer BML and the substrate 110. The buffer layer 115 may completely cover the substrate 110 and the light blocking layer BML. The buffer layer 115 may prevent the diffusion of impurity ions, prevent the penetration of moisture or external air, and perform a surface planarization function. In addition, the buffer layer 115 may insulate the light blocking layer BML from the first active material layer 126 and the second active material layer 146.

[0114] The semiconductor layer is disposed on the buffer layer 115. The semiconductor layer may include a first active material layer 126 of the first transistor 120, a second active material layer 146 of the second transistor 140, and an auxiliary layer 163. The semiconductor layer may include polysilicon, single crystal silicon, or an oxide semiconductor.

[0115] The first active material layer 126 may include a first doping region 126a, a second doping region 126b, and a first channel region 126c. The first channel region 126c may be disposed between the first doping region 126a and the second doping region 126b. The second active material layer 146 may include a third doping region 146a, a fourth doping region 146b, and a second channel region 146c. The second channel region 146c may be disposed between the third doping region 146a and the fourth doping region 146b. The first active material layer 126 and the second active material layer 146 may include polycrystalline silicon. Polycrystalline silicon may be formed by crystallizing amorphous silicon. Examples of crystallization methods may include, but are not limited to, rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced crystallization (MILC), and sequential lateral solidification (SLS). Alternatively, the first active material layer 126 and the second active material layer 146 may include single crystal silicon, low temperature polysilicon, amorphous silicon, etc. The first doping region 126 a, the second doping region 126 b, the third doping region 146 a, and the fourth doping region 146 b may be, but are not limited to, regions of the first active material layer 126 and the second active material layer 146 doped with impurities.

[0116] However, the first active material layer 126 and the second active material layer 146 are not necessarily limited to the above description. In an embodiment, the first active material layer 126 and the second active material layer 146 may include an oxide semiconductor. In this case, the first doping region 126a and the third doping region 146a may be a first conductive region, and the second doping region 126b and the fourth doping region 146b may be a second conductive region. When the first active material layer 126 and the second active material layer 146 include an oxide semiconductor, the oxide semiconductor may be an oxide semiconductor including indium (In). In some embodiments, the oxide semiconductor may be (but is not limited to) indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium tin oxide (IGTO), or indium gallium zinc tin oxide (IGZTO).

[0117] The first gate insulating layer 150 is disposed on the semiconductor layer. The first gate insulating layer 150 may completely cover the buffer layer 115 and the semiconductor layer. The first gate insulating layer 150 may serve as a gate insulating layer for each of the first transistor 120 and the second transistor 140.

[0118] A first conductive layer is disposed on the first gate insulating layer 150. The first conductive layer disposed on the first gate insulating layer 150 may include a first gate electrode 121 disposed on the first active material layer 126 of the first transistor 120, a second gate electrode 141 disposed on the second active material layer 146 of the second transistor 140, and a power wiring 161 disposed on the auxiliary layer 163. The first gate electrode 121 may overlap with the first channel region 126 c of the first active material layer 126, and the second gate electrode 141 may overlap with the second channel region 146 c of the second active material layer 146.

[0119] The interlayer insulating film 170 is provided on the first conductive layer. The interlayer insulating film 170 may function as an insulating film between the first conductive layer and other layers provided on the first conductive layer. In addition, the interlayer insulating film 170 may include an organic insulating material and perform a surface planarization function.

[0120] The second conductive layer is provided on the interlayer insulating film 170 , and includes the first drain electrode 123 and the first source electrode 124 of the first transistor 120 , the second drain electrode 143 and the second source electrode 144 of the second transistor 140 , and the power supply electrode 162 provided on the power supply wiring 161 .

[0121] The first drain electrode 123 and the first source electrode 124 may respectively contact the first doping region 126 a and the second doping region 126 b of the first active material layer 126 through contact holes passing through the interlayer insulating film 170 and the first gate insulating layer 150. The second drain electrode 143 and the second source electrode 144 may respectively contact the third doping region 146 a and the fourth doping region 146 b of the second active material layer 146 through contact holes passing through the interlayer insulating film 170 and the first gate insulating layer 150. In addition, the first drain electrode 123 and the second drain electrode 143 may be electrically connected to the first light-blocking layer BML1 and the second light-blocking layer BML2, respectively, through other contact holes.

[0122] The first insulating layer 200 is disposed on the second conductive layer. The first insulating layer 200 may include an organic insulating material and perform a surface planarization function.

[0123] The inner banks 410 and 420 , the outer bank 430 , the electrodes 210 and 220 , and the light emitting element 300 may be disposed on the first insulating layer 200 .

[0124] The banks 410 , 420 , and 430 may include inner banks 410 and 420 spaced apart from each other in each sub-pixel PXn and an outer bank 430 disposed at a boundary between adjacent sub-pixels PXn.

[0125] The outer bank 430 may extend in the second direction DR2 to be located at a boundary between sub-pixels PXn arranged in the first direction DR1. However, the disclosure is not limited thereto, and the outer bank 430 may extend in the first direction DR1 to be located at a boundary between sub-pixels PXn arranged in the second direction DR2. In other words, the outer bank 430 may define a boundary of each sub-pixel PXn.

[0126] When ink in which the light-emitting elements 300 are dispersed is ejected using an inkjet printing device during the manufacture of the display device 10, the outer bank 430 can prevent the ink from overflowing the boundary of each sub-pixel PXn. The outer bank 430 can separate the ink in which different light-emitting elements 300 are dispersed for different sub-pixels PXn so that the inks do not mix with each other. However, the disclosure is not limited thereto.

[0127] The inner banks 410 and 420 may include a first inner bank 410 and a second inner bank 420 disposed adjacent to the center of each sub-pixel PXn.

[0128] The first inner bank 410 and the second inner bank 420 are spaced apart to face each other. The first electrode 210 may be disposed on the first inner bank 410, and the second electrode 220 may be disposed on the second inner bank 420. Figure 3 and Figure 4 It can be understood that the first electrode branch portion 210B is disposed on the first inner bank 410 , and the second electrode branch portion 220B is disposed on the second inner bank 420 .

[0129] The first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 in each sub-pixel PXn. Although not shown in the drawings, the first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 toward the sub-pixel PXn adjacent to the sub-pixel PXn in the second direction DR2. However, the disclosure is not limited thereto, and the first inner bank 410 and the second inner bank 420 may be provided in each sub-pixel PXn to form a pattern throughout the display device 10. The banks 410, 420, and 430 may include, but are not limited to, polyimide (PI).

[0130] At least a portion of each of the first inner bank 410 and the second inner bank 420 may protrude from the first insulating layer 200. Each of the first inner bank 410 and the second inner bank 420 may protrude upward from the plane in which the light-emitting element 300 is disposed, and the protruding portion may be at least partially inclined. The protruding shape of each of the first inner bank 410 and the second inner bank 420 is not particularly limited. Since the inner banks 410 and 420 protruding from the first insulating layer 200 have inclined side surfaces, light emitted from the light-emitting element 300 can be reflected by the inclined side surfaces of the inner banks 410 and 420. As will be described later, when the electrodes 210 and 220 disposed on the inner banks 410 and 420 include a material having a high reflectivity, light emitted from the light-emitting element 300 can be reflected by the electrodes 210 and 220 located on the inclined side surfaces of the inner banks 410 and 420 to travel upward on the first insulating layer 200.

[0131] As described above, banks 410, 420, and 430 may be made of the same material and formed in the same process. However, outer banks 430 are provided at the boundaries of each sub-pixel PXn to form a grid pattern, while inner banks 410 and 420 are provided within each sub-pixel PXn to extend in one direction. Furthermore, outer banks 430 separate adjacent sub-pixels PXn during the inkjet process and prevent ink from overflowing into adjacent sub-pixels PXn. Inner banks 410 and 420 have a protruding structure within each sub-pixel PXn to serve as a reflective barrier that reflects light emitted from light-emitting element 300 upward above first insulating layer 200. However, the present disclosure is not limited thereto.

[0132] The electrodes 210 and 220 may be disposed on the first insulating layer 200 and the inner banks 410 and 420. As described above, each of the electrodes 210 and 220 includes an electrode trunk portion 210S or 220S and an electrode branch portion 210B or 220B. Figure 3 The line Xa-Xa' is a line intersecting the first electrode trunk portion 210S, Figure 3 The line Xb-Xb' is a line crossing the first electrode branch portion 210B and the second electrode branch portion 220B, Figure 3 The line Xc-Xc' is a line that intersects the second electrode trunk portion 220S. That is, it can be understood that the line Xc-Xc' is set at Figure 4 The first electrode 210 in the region cut along line Xa-Xa' is a first electrode trunk portion 210S, which is provided Figure 4 The first electrode 210 and the second electrode 220 in the region cut along the line Xb-Xb' are respectively the first electrode branch portion 210B and the second electrode branch portion 220B, which are arranged Figure 4The second electrode 220 in the region taken along line Xc-Xc' is a second electrode stem portion 220S. The electrode stem portions 210S and 220S and the electrode branch portions 210B and 220B may form the first electrode 210 and the second electrode 220, respectively.

[0133] Each of the first electrode 210 and the second electrode 220 may have a portion disposed on the first insulating layer 200 and a portion disposed on the first inner bank 410 or the second inner bank 420. As described above, the first electrode stem portion 210S of the first electrode 210 and the second electrode stem portion 220S of the second electrode 220 may extend in the first direction DR1, and the first inner bank 410 and the second inner bank 420 may extend in the second direction DR2 so as to be located in adjacent sub-pixels PXn in the second direction DR2. Although not shown in the drawings, the first electrode stem portion 210S and the second electrode stem portion 220S of the first electrode 210 and the second electrode stem portion 220S extending in the first direction DR1 may partially overlap with the first inner bank 410 and the second inner bank 420. However, the disclosure is not limited thereto, and the first electrode stem portion 210S and the second electrode stem portion 220S may not overlap with the first inner bank 410 and the second inner bank 420.

[0134] A first electrode contact hole CNTD that penetrates the first insulating layer 200 to expose a portion of the first drain electrode 123 of the first transistor 120 may be formed in the first electrode trunk portion 210S of the first electrode 210. The first electrode 210 may contact the first drain electrode 123 through the first electrode contact hole CNTD. The first electrode 210 may be electrically connected to the first drain electrode 123 of the first transistor 120 to receive a predetermined electrical signal.

[0135] The second electrode trunk portion 220S of the second electrode 220 may extend in one direction so as to also be located in a non-emission region where the light emitting element 300 is not provided. A second electrode contact hole CNTS that penetrates the first insulating layer 200 to expose a portion of the power electrode 162 may be formed in the second electrode trunk portion 220S. The second electrode 220 may contact the power electrode 162 through the second electrode contact hole CNTS. The second electrode 220 may be electrically connected to the power electrode 162 to receive a predetermined electrical signal from the power electrode 162.

[0136] Portions of the first electrode 210 and the second electrode 220 (e.g., the first electrode branch portion 210B and the second electrode branch portion 220B) may be disposed on the first inner bank 410 and the second inner bank 420, respectively. The first electrode branch portion 210B of the first electrode 210 may cover the first inner bank 410, and the second electrode branch portion 220B of the second electrode 220 may cover the second inner bank 420. Since the first inner bank 410 and the second inner bank 420 are spaced apart from each other at the center of each sub-pixel PXn, the first electrode branch portion 210B and the second electrode branch portion 220B may also be spaced apart from each other. A plurality of light-emitting elements 300 may be disposed in the region between the first electrode 210 and the second electrode 220, that is, in the space in which the first electrode branch portion 210B and the second electrode branch portion 220B are spaced apart to face each other.

[0137] Each of the electrodes 210 and 220 may include a transparent conductive material. For example, each of the electrodes 210 and 220 may include a material such as indium tin oxide (ITO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO). However, the disclosure is not limited thereto. In some embodiments, each of the electrodes 210 and 220 may include a conductive material having a high reflectivity. For example, each of the electrodes 210 and 220 may include a metal such as silver (Ag), copper (Cu), or aluminum (Al) as a material having a high reflectivity. In this case, each of the electrodes 210 and 220 may reflect incident light in an upward direction of each sub-pixel PXn.

[0138] In addition, each of the electrodes 210 and 220 may have a structure in which a transparent conductive material and a metal layer having high reflectivity are each stacked in one or more layers or may be formed as a single layer including them. In an embodiment, each of the electrodes 210 and 220 may have a stacked structure of ITO / Ag / ITO / IZO, or may be an alloy including aluminum (Al), nickel (Ni), lanthanum (La), etc. However, the disclosure is not limited thereto.

[0139] The second insulating layer 510 is disposed on the first insulating layer 200, the first electrode 210, and the second electrode 220. The second insulating layer 510 partially covers the first electrode 210 and the second electrode 220. The second insulating layer 510 may cover most of the upper surfaces of the first electrode 210 and the second electrode 220, but may partially expose the first electrode 210 and the second electrode 220. The second insulating layer 510 may partially expose the upper surfaces of the first electrode 210 and the second electrode 220, for example, partially expose the upper surface of the first electrode branch portion 210B disposed on the first inner bank 410 and the upper surface of the second electrode branch portion 220B disposed on the second inner bank 420. In other words, the second insulating layer 510 may be formed substantially entirely on the first insulating layer 200, but may include openings that partially expose the first electrode 210 and the second electrode 220. The openings in the second insulating layer 510 may be positioned to expose the relatively flat upper surfaces of the first electrode 210 and the second electrode 220.

[0140] In an embodiment, the second insulating layer 510 may be stepped so that a portion of the upper surface of the second insulating layer 510 is recessed between the first electrode 210 and the second electrode 220. In some embodiments, the second insulating layer 510 may include an inorganic insulating material, and a portion of the upper surface of the second insulating layer 510, which is provided to cover the first electrode 210 and the second electrode 220, may be recessed due to a step formed by a member provided below the second insulating layer 510. The light-emitting element 300 provided on the second insulating layer 510 between the first electrode 210 and the second electrode 220 may form an empty space with the recessed upper surface of the second insulating layer 510. The light-emitting element 300 may be partially spaced apart from the upper surface of the second insulating layer 510, and the empty space may be filled with a material forming the third insulating layer 520, which will be described later.

[0141] However, the disclosure is not limited thereto. The second insulating layer 510 may also form a flat upper surface so that the light-emitting element 300 may be disposed on the flat upper surface. The upper surface may extend in a direction toward the first electrode 210 and the second electrode 220 and may terminate on the inclined side surfaces of the first electrode 210 and the second electrode 220. That is, the second insulating layer 510 may be disposed in an area where the electrodes 210 and 220 overlap with the inclined side surfaces of the first inner bank 410 and the second inner bank 420, respectively. The contact electrode 260, which will be described later, may contact the exposed areas of the first electrode 210 and the second electrode 220 and may smoothly contact the end of the light-emitting element 300 on the flat upper surface of the second insulating layer 510.

[0142] The second insulating layer 510 can protect the first electrode 210 and the second electrode 220 while insulating the first electrode 210 and the second electrode 220 from each other. In addition, the second insulating layer 510 can prevent the light emitting element 300 disposed on the second insulating layer 510 from directly contacting other components and being damaged. However, the shape and structure of the second insulating layer 510 are not limited thereto.

[0143] The light-emitting element 300 may be disposed on the second insulating layer 510 between the electrodes 210 and 220. For example, at least one light-emitting element 300 may be disposed on the second insulating layer 510 disposed between the electrode branch portions 210B and 220B. However, the disclosure is not limited thereto. Although not shown in the drawings, at least some of the light-emitting elements 300 disposed in each sub-pixel PXn may also be disposed in an area other than the area between the electrode branch portions 210B and 220B. In addition, the light-emitting element 300 may be disposed at a position where a portion of each light-emitting element 300 overlaps with the electrodes 210 and 220. The light-emitting element 300 may be disposed on respective ends of the first electrode branch portion 210B and the second electrode branch portion 220B that face each other, and may be electrically connected to the electrodes 210 and 220, respectively, via the contact electrodes 260.

[0144] In each light-emitting element 300, a plurality of layers may be arranged in a direction horizontal to the first insulating layer 200. Each of the light-emitting elements 300 of the display device 10 according to the embodiment may extend in one direction and may have a structure in which a plurality of semiconductor layers are sequentially arranged in the one direction. As will be described later, each of the light-emitting elements 300 may include a first semiconductor layer 310, an active layer 330, a second semiconductor layer 320, and an electrode layer 370 sequentially arranged in one direction, and an insulating film 380 may surround the outer surfaces of the above layers. The light-emitting elements 300 arranged in the display device 10 may extend in a direction parallel to the first insulating layer 200, and the semiconductor layers included in each of the light-emitting elements 300 may be sequentially arranged in a direction parallel to the upper surface of the first insulating layer 200. However, the disclosure is not limited thereto. In some cases, when the light-emitting elements 300 have different structures, the plurality of layers may be arranged in a direction perpendicular to the first insulating layer 200.

[0145] Additionally, one end of each light-emitting element 300 may contact the first contact electrode 261, and the other end may contact the second contact electrode 262. Depending on the embodiment, the insulating film 380 may not be formed on the end surface of each light-emitting element 300 in the direction in which the light-emitting element 300 extends, thereby exposing the end surface. Therefore, the exposed area of each light-emitting element 300 may contact the first contact electrode 261 and the second contact electrode 262, which will be described later. However, the disclosure is not limited to this. In some cases, at least a portion of the insulating film 380 of each light-emitting element 300 may be removed, and the insulating film 380 may be removed to partially expose the side surfaces of both ends of the light-emitting element 300. During the process of forming the third insulating layer 520 covering the outer surface of each light-emitting element 300 in the manufacturing process of the display device 10, the insulating film 380 may be partially removed. The exposed side surface of each light-emitting element 300 may contact the first contact electrode 261 and the second contact electrode 262. However, the disclosure is not limited to this.

[0146] The third insulating layer 520 may be disposed on a portion of each light-emitting element 300 disposed between the first electrode 210 and the second electrode 220. The third insulating layer 520 may partially cover the outer surface of each light-emitting element 300. During the process of manufacturing the display device 10, the third insulating layer 520 may secure the light-emitting element 300 while protecting the light-emitting element 300. In addition, in an embodiment, a portion of the material of the third insulating layer 520 may be disposed between the lower surface of the light-emitting element 300 and the second insulating layer 510. As described above, during the process of manufacturing the display device 10, the third insulating layer 520 may be formed to fill the space between the second insulating layer 510 and each formed light-emitting element 300. Thus, the third insulating layer 520 may be formed to cover the outer surface of each light-emitting element 300. However, the disclosure is not limited thereto.

[0147] In a plan view, the third insulating layer 520 may extend in the second direction DR2 between the first electrode branch portion 210B and the second electrode branch portion 220B. For example, the third insulating layer 520 disposed on the first insulating layer 200 may have an island shape or a linear shape in a plan view. According to an embodiment, the third insulating layer 520 may be disposed on the light emitting element 300.

[0148] Each of the first contact electrode 261 and the second contact electrode 262 is disposed on the electrode 210 or 220 and the third insulating layer 520. The first contact electrode 261 and the second contact electrode 262 may be spaced apart from each other on the third insulating layer 520. The third insulating layer 520 may insulate the first contact electrode 261 and the second contact electrode 262 from each other to prevent them from directly contacting each other.

[0149] As described above, the first contact electrode 261 and the second contact electrode 262 may extend in the second direction DR2 in a plan view and may be spaced apart from each other in the first direction DR1. Each of the first contact electrode 261 and the second contact electrode 262 may contact at least one end of each light emitting element 300 and may be electrically connected to the first electrode 210 or the second electrode 220 to receive an electrical signal.

[0150] The first contact electrode 261 may contact an exposed region of the first electrode 210 on the first inner bank 410, and the second contact electrode 262 may contact an exposed region of the second electrode 220 on the second inner bank 420. The first contact electrode 261 and the second contact electrode 262 may transmit an electrical signal received from each electrode 210 or 220 to the light emitting element 300.

[0151] The contact electrode 260 may include a conductive material such as ITO, IZO, ITZO, or aluminum (Al). However, the disclosure is not limited thereto.

[0152] A passivation layer 550 may be disposed on the contact electrode 260 and the third insulating layer 520. The passivation layer 550 may serve to protect components disposed on the first insulating layer 200 from external environments.

[0153] Each of the second insulating layer 510, the third insulating layer 520 and the passivation layer 550 may include an inorganic insulating material or an organic insulating material. In an embodiment, the second insulating layer 510, the third insulating layer 520 and the passivation layer 550 may include a silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), an inorganic insulating material such as aluminum oxide (Al2O3) or aluminum nitride (AlN). Alternatively, the second insulating layer 510, the third insulating layer 520 and the passivation layer 550 may include an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, cardol resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate or polymethyl methacrylate-polycarbonate synthetic resin. However, the disclosure is not limited thereto.

[0154] The display device 10 may include a large number of insulating layers. According to an embodiment, the display device 10 may further include a fourth insulating layer 530 (see FIG. 5 ) configured to protect the first contact electrode 261. Figure 5 ).

[0155] Figure 5 is a cross-sectional view of a portion of a display device according to an embodiment.

[0156] Reference Figure 5 The display device 10 according to the embodiment may further include a fourth insulating layer 530 provided on the first contact electrode 261. Figure 4 The display device 10 according to the present embodiment is different in that the display device 10 further includes a fourth insulating layer 530, and thus at least a portion of the second contact electrode 262 is disposed on the fourth insulating layer 530. Therefore, any redundant description will be omitted, and the differences will be mainly described below.

[0157] Figure 5 The display device 10 may include a fourth insulating layer 530 disposed on the first contact electrode 261 and electrically insulating the first contact electrode 261 and the second contact electrode 262 from each other. The fourth insulating layer 530 may cover the first contact electrode 261 but may not overlap a portion of each light-emitting element 300 so that the light-emitting element 300 can be connected to the second contact electrode 262. The fourth insulating layer 530 may be disposed on the upper surface of the third insulating layer 520 to partially contact the first contact electrode 261 and the third insulating layer 520. The fourth insulating layer 530 may cover one end of the first contact electrode 261 on the third insulating layer 520. Thus, the fourth insulating layer 530 may protect the first contact electrode 261 while electrically insulating the first contact electrode 261 from the second contact electrode 262.

[0158] The side surface of the fourth insulating layer 530 in the direction in which the second contact electrode 262 is provided may be aligned with the side surface of the third insulating layer 520. However, the disclosure is not limited thereto. In some embodiments, the fourth insulating layer 530 may include an inorganic insulating material (similar to the second insulating layer 510).

[0159] The first contact electrode 261 may be provided between the first electrode 210 and the fourth insulating layer 530, and the second contact electrode 262 may be provided on the fourth insulating layer 530. The second contact electrode 262 may partially contact the second insulating layer 510, the third insulating layer 520, the fourth insulating layer 530, the second electrode 220, and the light-emitting element 300. One end of the second contact electrode 262 in the direction in which the first electrode 210 is provided may be provided on the fourth insulating layer 530.

[0160] A passivation layer 550 may be disposed on the fourth insulating layer 530 and the second contact electrode 262 to protect the fourth insulating layer 530 and the second contact electrode 262. Redundant descriptions will be omitted below.

[0161] As described above, the display device 10 according to the embodiment may include a light-emitting element 300, each light-emitting element 300 having a pattern formed on its end surface. The display device 10 may include a plurality of light-emitting elements 300 having different patterns, for example, a first light-emitting element 301, a second light-emitting element 302, and a third light-emitting element 303. Each of the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 includes a pattern portion (i.e., a protruding pattern 370P) formed on its end surface. The pattern portion (i.e., the protruding pattern 370P) formed on the light-emitting element 300 can be used to identify at which position in the semiconductor structure 3000 each light-emitting element 300 is manufactured. The light-emitting element 300 according to the embodiment will now be described in detail with reference to the other drawings.

[0162] Figure 6 is a schematic diagram of a light emitting element according to an embodiment. Figure 7 It is along Figure 6 A cross-sectional view taken along line VI-VI'.

[0163] The light-emitting element 300 may be a light-emitting diode. Specifically, the light-emitting element 300 may be an inorganic light-emitting diode having a micrometer or nanometer size and made of an inorganic material. When an electric field is formed in a specific direction between two electrodes facing each other, the inorganic light-emitting diode can be aligned between the two electrodes where polarity is formed. The light-emitting element 300 can be aligned between the two electrodes by forming an electric field on the electrodes.

[0164] The light emitting element 300 according to the embodiment may extend in one direction. The light emitting element 300 may be shaped like a rod, a wire, a tube, or the like. In an embodiment, the light emitting element 300 may be shaped like a cylinder or a rod. However, the shape of the light emitting element 300 is not limited thereto, and the light emitting element 300 may also have various shapes, including polygonal prisms such as cubes, rectangular parallelepipeds, and hexagonal prisms, and shapes extending in one direction and having partially inclined outer surfaces. A plurality of semiconductors included in the light emitting element 300, which will be described later, may be sequentially arranged or stacked along one direction.

[0165] The light emitting element 300 may include a semiconductor layer doped with impurities of any conductivity type (eg, p-type or n-type), and may receive an electrical signal from an external power source and emit light of a specific wavelength band.

[0166] The light emitting element 300 according to the embodiment can emit light of a specific wavelength band. In an embodiment, the active layer 330 can emit blue light whose central wavelength band is in the range of 450nm to 495nm. However, the central wavelength band of blue light is not limited to the above range and should be understood to include all wavelength ranges that can be considered blue in the disclosed field. In addition, the light emitted from the active layer 330 of the light emitting element 300 is not limited to blue light, but can also be green light whose central wavelength band is in the range of 495nm to 570nm or red light whose central wavelength band is in the range of 620nm to 750nm. The light emitting element 300 emitting blue light will be described below as an example.

[0167] Reference Figure 6 and Figure 7 The light emitting element 300 may include a first semiconductor layer 310 , a second semiconductor layer 320 , an active layer 330 , an electrode layer 370 and an insulating film 380 .

[0168] The first semiconductor layer 310 may be an n-type semiconductor. In an example, when the light emitting element 300 emits light in the blue wavelength band, the first semiconductor layer 310 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material, for example, any one or more of n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 310 may be doped with an n-type dopant, for example, Si, Ge, Sn, or Se. In an embodiment, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 may be in the range of (but not limited to) 1.5 μm to 5 μm.

[0169] The second semiconductor layer 320 is provided on the active layer 330 to be described later. The second semiconductor layer 320 may be a p-type semiconductor. In an example, when the light emitting element 300 emits light in the blue band or the green band, the second semiconductor layer 320 may include a semiconductor having a chemical formula of Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material, for example, any one or more of p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer 320 may be doped with a p-type dopant, for example, Mg, Zn, Ca, or Ba. In an embodiment, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 may be in the range of (but not limited to) 0.05 μm to 0.10 μm.

[0170] Although each of the first semiconductor layer 310 and the second semiconductor layer 320 is composed of a single layer in the drawings, the disclosure is not limited thereto. According to some embodiments, each of the first semiconductor layer 310 and the second semiconductor layer 320 may include more layers, for example, a cladding layer or a tensile strain barrier reduction layer depending on the material of the active layer 330. This will be described later with reference to other drawings.

[0171] The active layer 330 is disposed between the first semiconductor layer 310 and the second semiconductor layer 320. The active layer 330 may include a material having a single quantum well structure or a multiple quantum well structure. When the active layer 330 includes a material having a multiple quantum well structure, the active layer 330 may have a structure in which multiple quantum layers and multiple well layers are alternately stacked. The active layer 330 may emit light through the recombination of electron-hole pairs in response to an electrical signal received through the first semiconductor layer 310 and the second semiconductor layer 320. For example, when the active layer 330 emits light in the blue wavelength band, the active layer 330 may include a material such as AlGaN or AlGaInN. In particular, when the active layer 330 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include a material such as AlGaN or AlGaInN, and the well layers may include a material such as GaN or AlInN. In an embodiment, the active layer 330 may include AlGaInN as the quantum layers and AlInN as the well layers to emit blue light having a central wavelength band within the range of 450 nm to 495 nm as described above.

[0172] However, the disclosure is not limited thereto, and the active layer 330 may also have a structure in which semiconductor materials having a large energy band gap and semiconductor materials having a small energy band gap are alternately stacked, or may include different Group III to Group V semiconductor materials depending on the wavelength band of light emitted by the active layer 330. The light emitted from the active layer 330 is not limited to light in the blue wavelength band. In some cases, the active layer 330 may emit light in the red wavelength band or the green wavelength band. The length of the active layer 330 may be in the range of (but not limited to) 0.05 μm to 0.10 μm.

[0173] The light emitted from the active layer 330 may be irradiated not only to the outer surface of the light emitting element 300 in the longitudinal direction but also to both side surfaces. The direction of the light emitted from the active layer 330 is not limited to one direction.

[0174] The electrode layer 370 may be an ohmic contact electrode. However, the disclosure is not limited thereto, and the electrode layer 370 may also be a Schottky contact electrode. The light emitting element 300 may also include at least one electrode layer 370. Figure 6In the embodiment of the present invention, the light emitting element 300 includes one electrode layer 370, but the disclosure is not limited thereto. In some cases, the light emitting element 300 may include more electrode layers 370, or may omit the electrode layer 370. Even if the number of electrode layers 370 is changed or other structures are included, the following description of the light emitting element 300 can also be applied.

[0175] When the light emitting element 300 is electrically connected to the electrode or contact electrode in the display device 10 according to the embodiment, the electrode layer 370 can reduce the resistance between the light emitting element 300 and the electrode or contact electrode. The electrode layer 370 may include a conductive metal. For example, the electrode layer 370 may include at least any one of aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). In addition, the electrode layer 370 may include an n-type doped or p-type doped semiconductor material. The electrode layer 370 may include the same material or different materials, but the disclosure is not limited thereto.

[0176] The insulating film 380 surrounds the outer surfaces of the semiconductor layer and the electrode layer 370. In an embodiment, the insulating film 380 may surround at least the outer surface of the active layer 330 and extend in the direction along which the light-emitting element 300 extends. The insulating film 380 may protect the above components. For example, the insulating film 380 may surround the side surfaces of the above components, but may leave both ends of the light-emitting element 300 exposed in the longitudinal direction.

[0177] In the drawings, the insulating film 380 extends in the longitudinal direction of the light-emitting element 300 to cover the side surface of the first semiconductor layer 310 to the side surface of the electrode layer 370. However, the disclosure is not limited thereto, and the insulating film 380 may cover only some of the semiconductor layers and the outer surface of the active layer 330, or may cover only a portion of the outer surface of the electrode layer 370 to partially expose the outer surface of the electrode layer 370. In addition, in a region adjacent to at least one end of the light-emitting element 300, the upper surface of the insulating film 380 may be rounded in cross section.

[0178] The thickness of the insulating film 380 may be in the range of, but not limited to, 10 nm to 1.0 μm. The thickness of the insulating film 380 may preferably be about 40 nm.

[0179] The insulating film 380 may include a material such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y), aluminum nitride (AlN), or aluminum oxide (Al2O3). Therefore, insulating film 380 can prevent electrical short circuits that may occur when active layer 330 directly contacts an electrode through which an electrical signal is transmitted to light-emitting element 300. In addition, insulating film 380 can prevent a decrease in luminous efficiency by protecting the outer surface of light-emitting element 300 including active layer 330.

[0180] In some embodiments, the outer surface of the insulating film 380 may be treated. When manufacturing the display device 10, the light-emitting elements 300 may be sprayed onto the electrodes while being dispersed in a predetermined ink and then aligned. The surface of the insulating film 380 may be treated with a hydrophobic or hydrophilic treatment to separate the light-emitting elements 300 from other adjacent light-emitting elements 300 in the ink without agglomerating with them.

[0181] The length h of the light-emitting element 300 may be in the range of 1 μm to 10 μm or 2 μm to 6 μm, and may preferably be in the range of 3 μm to 5 μm. In addition, the diameter of the light-emitting element 300 may be in the range of 300 nm to 700 nm, and the aspect ratio of the light-emitting element 300 may be 1.2 to 100. However, the disclosure is not limited thereto, and the plurality of light-emitting elements 300 included in the display device 10 may also have different diameters depending on the composition of the active layer 330. The diameter of the light-emitting element 300 may preferably be about 500 nm.

[0182] The light emitting element 300 according to the embodiment may include a protrusion pattern 370P formed on the surface of the electrode layer 370. During the process of manufacturing the light emitting element 300, the protrusion pattern 370P may be formed by partially etching the upper surface of the electrode layer 370. Figure 6 and Figure 7 The protrusion pattern 370P is formed on the exposed upper surface of the electrode layer 370, but the disclosure is not limited thereto. In some cases, the protrusion pattern 370P can be formed by partially etching the upper surface of the second semiconductor layer 320, and the exposed upper surface of the electrode layer 370 can be formed into a flat surface. The following describes a case where the protrusion pattern 370P is formed on the upper surface of the electrode layer 370 as an example.

[0183] The protrusion pattern 370P may include a plurality of protrusions protruding from portions of the upper surface of the electrode layer 370 and recesses other than the protrusions. The recesses are regions between the protrusions and may be regions recessed from the protrusions.

[0184] According to an embodiment, the protrusion pattern 370P may include any first protrusion, a second protrusion spaced apart from the first protrusion, and a recess formed between the first protrusion and the second protrusion. The protrusion pattern 370P may include one or more protrusions, and the protrusions may be spaced apart from each other. As shown in the accompanying drawings, the protrusion pattern 370P may include any one protrusion and other protrusions surrounding the protrusion, and a recess may be formed between them. However, the disclosure is not limited thereto, and the protrusions of the protrusion pattern 370P may also be formed as a plurality of patterns spaced apart from each other. That is, any one protrusion may not surround another protrusion, but may be spaced apart from the protrusion so as to face the protrusion.

[0185] In some embodiments, the protrusions of the protrusion pattern 370P may have a curved outer surface and may have a protruding shape. Figure 6 As shown in FIG, the protrusion pattern 370P may include a circular first protrusion located at the center of the upper surface of the electrode layer 370 and circular second and third protrusions spaced apart from the first protrusion to surround the first protrusion. However, the disclosure is not limited thereto, and the protrusions of the protrusion pattern 370P may also extend in one direction or may have a grid structure. In addition, the number of protrusions included in the protrusion pattern 370P of the light-emitting element 300 may vary.

[0186] According to an embodiment, the protrusions may have the same width and may be spaced apart at regular intervals. The width of the first protrusion may be equal to the width of the second protrusion and the width of the third protrusion, and the distance between the first protrusion and the second protrusion and the distance between the second protrusion and the third protrusion may be equal to each other. In some embodiments, the first protrusion includes an area having a width equal to the distance between the first protrusion and the second protrusion. The width of the protrusions and the distance between the protrusions of the protrusion pattern 370P may be determined according to the second pattern layer 1800 (see FIG. Figure 21 ), the second pattern layer 1800 is formed to be used for etching the upper surface of the electrode layer 370 during the process of the light-emitting element 300 as will be described later. That is, the number, width, and spacing of the protrusions included in the protrusion pattern 370P can vary according to the shape of the second pattern layer 1800. However, the protrusions do not necessarily have to have the same width and spacing. Only some of the protrusions may have the same width as other protrusions, or may be spaced apart from another protrusion at the same distance as the other protrusions.

[0187] In addition, according to embodiments, the protrusion pattern 370P of the light-emitting element 300 can be formed on the upper surface of the electrode layer 370, and the two end surfaces of the light-emitting element 300 can have different roughness. As will be described later, the protrusion pattern 370P can be formed by partially etching the surface of the semiconductor structure 3000. Therefore, in the semiconductor structure 3000, the surface on which the protrusion pattern 370P is formed can have an uneven surface, while the other surface can have a flat surface. The protrusion pattern 370P can be formed on the end surface of the light-emitting element 300 formed by etching the semiconductor structure 3000, and the other end surface of the light-emitting element 300 can have a flat surface. In other words, the two end surfaces of the light-emitting element 300 can have different roughness. In this specification, "roughness" means that the flatness of one surface is relatively different from the flatness of another surface. For example, the light-emitting element 300 according to embodiments can include an end surface on which the protrusion pattern 370P is formed and another end surface on which the protrusion pattern 370P is not formed. Since the flatness of one end surface is lower than that of the other end surface, the end surfaces can be understood as having different roughness. However, the disclosure is not limited thereto, and as long as it is within the scope of the meaning of the term "roughness", even in cases different from the above, it can be understood as the same.

[0188] The light emitting element 300 may include two end surfaces having different roughnesses, and may be electrically connected to different electrodes 210 and 220, respectively. Figure 4 As shown in FIG, according to an embodiment, the end surface of the light-emitting element 300 on which the protrusion pattern 370P is formed can be electrically connected to the first electrode 210, and the other end surface can be electrically connected to the second electrode 220. The first contact electrode 261 can contact the first electrode 210 and the protrusion pattern 370P of the light-emitting element 300, and the second contact electrode 262 can contact the second electrode 220 and the first semiconductor layer 310 of the light-emitting element 300. However, the disclosure is not limited thereto. This is the same as described above, so its detailed description will be omitted.

[0189] The protrusion pattern 370P of the light emitting element 300 may be formed by an etching process performed during the process of manufacturing the light emitting element 300. The process of manufacturing the light emitting element 300 includes etching the semiconductor structure 3000 in one direction (see FIG. Figure 11), the luminous properties of the manufactured light-emitting elements 300 may vary depending on the location in the semiconductor structure 3000. The semiconductor structure 3000 manufactured by growing semiconductor material may have different compositions depending on the location. Therefore, the light emitted from the manufactured light-emitting elements 300 may have different emission amounts or central wavelengths. In order to manufacture light-emitting elements 300 with uniform luminous properties, a predetermined mark may be required to identify the location in the semiconductor structure 3000 where each light-emitting element 300 with specific luminous properties is manufactured.

[0190] Since the light-emitting element 300 according to the embodiment includes the protrusion pattern 370P formed on the surface of the electrode layer 370, the position of the light-emitting element 300 having specific light-emitting characteristics can be identified during the process of manufacturing the light-emitting element 300. Therefore, the composition ratio of the semiconductor material can be controlled according to the position in the semiconductor structure 3000, and the light-emitting element 300 having uniform light-emitting characteristics can be manufactured. The display device 10 according to the embodiment can include a plurality of light-emitting elements 300 having uniform light-emitting characteristics but different protrusion patterns 370P.

[0191] Figure 8 It is along Figure 3 A cross-sectional view taken along line VII-VII'.

[0192] Reference Figure 8 , the display device 10 according to the embodiment may include a first light-emitting element 301, a second light-emitting element 302, and a third light-emitting element 303 having different protrusion patterns 370P. The first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 may each have a protrusion pattern 370P including protrusions and depressions, and may each include a different number of protrusions. The first light-emitting element 301 may include a first protrusion pattern 371P having three protrusions and two depressions formed between the three protrusions. The second light-emitting element 302 may include a second protrusion pattern 372P having two protrusions and one depression. The third light-emitting element 303 may include a third protrusion pattern 373P having one protrusion and one depression. In Figure 8 , each of the first light emitting element 301, the second light emitting element 302, and the third light emitting element 303 includes a circular protrusion, and any one protrusion surrounds another protrusion. However, the disclosure is not limited thereto, and the protrusions of the protrusion pattern 370P may have various shapes as will be described later.

[0193] During the manufacturing process, light-emitting elements 300 having different protrusion patterns 370P can be formed at different locations in the semiconductor structure 3000. The location where each light-emitting element 300 is formed in the semiconductor structure 3000 can be identified based on the shape of the protrusion pattern 370P formed in the light-emitting element 300, the number of protrusions, etc. For example, based on the light-emitting characteristics of the first light-emitting element 301 including the first protrusion pattern 371P, the second light-emitting element 302 and the third light-emitting element 303 can have different light-emitting characteristics from the first light-emitting element 301. To control their light-emitting characteristics, the semiconductor composition at the locations in the semiconductor structure 3000 where the second protrusion pattern 372P of the second light-emitting element 302 and the third protrusion pattern 373P of the third light-emitting element 303 are formed can be adjusted. By adjusting the composition ratio of the regions where the second protrusion pattern 372P and the third protrusion pattern 373P are located based on the region where the first protrusion pattern 371P of the semiconductor structure 3000 is located, the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 can have uniform light-emitting characteristics. Therefore, the display device 10 according to the embodiment can include light-emitting elements 300 that include different protrusion patterns 370P but have uniform light-emitting characteristics, and each sub-pixel PXn can have uniform light-emitting characteristics by including various light-emitting elements 300.

[0194] A process of manufacturing the light emitting element 300 according to the embodiment will now be described.

[0195] Figure 9 is a flowchart illustrating a method for manufacturing a light emitting element according to an embodiment.

[0196] Reference Figure 9 According to an embodiment, the method for manufacturing a light emitting element 300 may include providing a semiconductor structure 3000 formed on a substrate (operation S100), and forming a plurality of element rods ROD by etching the semiconductor structure 3000, each element rod ROD including a protrusion pattern 370P protruding from at least a portion of an upper surface, wherein different protrusion patterns 370P are formed in different areas WA defined in the semiconductor structure 3000 (operation S200).

[0197] As described above, the light-emitting element 300 can be manufactured by etching the semiconductor structure 3000. The method for manufacturing the light-emitting element 300 according to the embodiment may include a process of forming a protrusion pattern 370P to indicate the location where the light-emitting element 300 is formed in the semiconductor structure 3000. The manufactured light-emitting element 300 may include the protrusion pattern 370P, and the locations having different light-emitting characteristics in the semiconductor structure 3000 may be identified by the protrusion pattern 370P. The method for manufacturing the light-emitting element 300 will be described in detail with reference to other drawings.

[0198] Figures 10 to 25 is a schematic diagram illustrating a process of manufacturing a light emitting element according to an embodiment.

[0199] First, refer to Figure 10 , a lower substrate 1000 including a base substrate 1100 and a buffer material layer 1200 formed on the base substrate 1100 is prepared. The base substrate 1100 may include a sapphire substrate (Al2O3) or a transparent substrate such as glass. However, the disclosure is not limited thereto, and the base substrate 1100 may also be made of a conductive substrate such as GaN, SiC, ZnO, Si, GaP or GaAs. The case where the base substrate 1100 is a sapphire substrate (Al2O3) will be described below as an example. The thickness of the base substrate 1100 is not particularly limited, but may be, for example, in the range of 400 μm to 1500 μm.

[0200] A plurality of semiconductor layers are formed on the base substrate 1100. The semiconductor layers grown by epitaxial method can be formed by growing seed crystals. Here, the method for forming the semiconductor layers can be electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporation, sputtering or metal organic chemical vapor deposition (MOCVD), and can preferably be MOCVD, but the disclosure is not limited thereto.

[0201] The precursor material for forming the semiconductor layer is not particularly limited to the range of materials that can be generally selected to form the target material. For example, the precursor material may include a metal precursor containing an alkyl group such as a methyl group or an ethyl group. For example, the metal precursor may be (but not limited to) a compound such as trimethylgallium (Ga(CH3)3), trimethylaluminum (Al(CH3)3), or triethyl phosphate (C2H5)3PO4. The method or process conditions for forming the semiconductor layer will not be described below, and the order of the method for manufacturing the light-emitting element 300 and the stacking structure of each light-emitting element 300 will be described in detail.

[0202] A buffer material layer 1200 is formed on the base substrate 1100. Although the buffer material layer 1200 is shown as a single layer in the drawings, the disclosure is not limited thereto, and a plurality of layers may be formed. The buffer material layer 1200 may be provided to reduce the difference in lattice constant between the first semiconductor 3100 and the base substrate 1100.

[0203] For example, the buffer material layer 1200 may include an undoped semiconductor and may include a material substantially the same as the first semiconductor 3100 but may be a material not doped with n-type or p-type. In an embodiment, the buffer material layer 1200 may be (but not limited to) at least any one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN. In addition, depending on the base substrate 1100, the buffer material layer 1200 may be omitted. A case where the buffer material layer 1200 including an undoped semiconductor is formed on the base substrate 1100 will be described as an example.

[0204] Next, refer to Figure 11 , a semiconductor structure 3000 is formed on a lower substrate 1000. The semiconductor structure 3000 may include a first semiconductor 3100, an active layer 3300, a second semiconductor 3200, and an electrode material layer 3700. The multiple material layers included in the semiconductor structure 3000 may be formed by performing the conventional process described above. The multiple layers included in the semiconductor structure 3000 may respectively correspond to the multiple layers of each light-emitting element 300 according to the embodiment. That is, the multiple layers in the semiconductor structure 3000 may respectively include the same materials as the first semiconductor layer 310, active layer 330, second semiconductor layer 320, and electrode layer 370 of each light-emitting element 300.

[0205] like Figure 11 As shown in FIG, the active layer 3300 of the semiconductor structure 3000 may include regions WA having different light emitting characteristics at different locations. The regions WA may be defined at different locations in the semiconductor structure 3000.

[0206] Depending on the performance or quality of the manufacturing equipment, the semiconductor structure 3000 formed on the lower substrate 1000 may have a region having a partially non-uniform composition depending on the spatial location. For example, when the semiconductor structure 3000 is formed by MOCVD, the precursor material provided on the lower substrate 1000 may be in a vapor phase. The precursor material in the vapor phase may be provided on the lower substrate 1000 in a non-uniform distribution. Therefore, the semiconductor structure 3000 formed by depositing the precursor material may have a non-uniform composition depending on the spatial location.

[0207] Here, when the active layer 3300 of the semiconductor structure 3000 has different compositions depending on the spatial position, the corresponding active layers 330 of the multiple light-emitting elements 300 manufactured may have different compositions. The light-emitting elements 300 manufactured at different positions in the semiconductor structure 3000 may have different luminous properties (for example, different luminous amounts and central wavelength bands of the emitted light). The semiconductor structure 3000 may include a first area WA1, a second area WA2, and a third area WA3. In some embodiments, the first area WA1, the second area WA2, and the third area WA3 may be distinguished based on the luminous properties of the active layer 3300 of the semiconductor structure 3000. The second area WA2 and the third area WA3 may have luminous amounts or central wavelength bands of light that are different from those of the first area WA1. However, the disclosure is not limited thereto, and the first area WA1, the second area WA2, and the third area WA3 of the semiconductor structure 3000 may also be arbitrarily defined areas.

[0208] The method for manufacturing the light-emitting element 300 may include forming a different protrusion pattern 370P on the upper surface of each region WA. Therefore, the position where each light-emitting element 300 is formed in the semiconductor structure 3000 can be identified. When the light-emitting characteristics of the light-emitting element 300 having a specific protrusion pattern 370P are different from the light-emitting characteristics of other light-emitting elements 300, the composition of the active layer 3300 in the region WA where the protrusion pattern 370P is formed in the semiconductor structure 3000 can be adjusted.

[0209] The method for manufacturing the light emitting element 300 according to the embodiment may include forming a first pattern layer 1700 for forming element rods (RODs) and forming a second pattern layer 1800 for forming protrusion patterns 370P. Etching the semiconductor structure 3000 along the mask pattern of the first pattern layer 1700 may form semiconductor crystals 3000', each of which includes a first semiconductor layer 310, an active layer 330, a second semiconductor layer 320, etc. Etching the semiconductor structure 3000 along the mask pattern of the second pattern layer 1800 may form protrusion patterns 370P.

[0210] The method for forming the semiconductor crystal 3000 ′ includes forming an etching mask layer 1600 and a first pattern layer 1700 on the semiconductor structure 3000 , and forming the semiconductor crystal 3000 ′ by etching the semiconductor structure 3000 in a direction perpendicular to the lower substrate 1000 .

[0211] First, if Figures 12 to 15As shown in FIG, an etch mask layer 1600 and a first pattern layer 1700 are formed on the semiconductor structure 3000. The etch mask layer 1600 is formed on the electrode material layer 3700, and the first pattern layer 1700 is formed on the etch mask layer 1600. The etch mask layer 1600 can be used as a mask for continuously etching layers of the semiconductor structure 3000. The etch mask layer 1600 can include a first etch mask layer 1610 including an insulating material and a second etch mask layer 1620 including a metal.

[0212] The first etching mask layer 1610 may include oxide or nitride as an insulating material. The insulating material may be, for example, silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y The thickness of the first etch mask layer 1610 may be in the range of, but not limited to, 0.5 μm to 1.5 μm.

[0213] A second etch mask layer 1620 is disposed on the first etch mask layer 1610. For example, the second etch mask layer 1620 may be a hard mask layer. The second etch mask layer 1620 may include a material that can be used as a mask for continuous etching of the semiconductor structure 3000, and may include, for example, a metal such as chromium (Cr). The thickness of the second etch mask layer 1620 may be in the range of (but not limited to) 30 nm to 150 nm.

[0214] A first pattern layer 1700 may be provided on the etching mask layer 1600. The first pattern layer 1700 may include first to third mask patterns 1710, 1720, and 1730 spaced apart from each other to serve as a mask for sequentially etching the semiconductor structure 3000. The first pattern layer 1700 may include a polymer, polystyrene balls, silicon dioxide balls, etc., but is not limited to a specific material as long as it is a material that can form a pattern.

[0215] For example, when the first pattern layer 1700 includes a polymer, a conventional method for forming a pattern using a polymer may be employed. For example, the first pattern layer 1700 including a polymer may be formed using a method such as photolithography, electron beam lithography, or nanoimprint lithography.

[0216] In an embodiment, the first pattern layer 1700 can be formed by nanoimprint lithography. As shown in the figure, the step of forming the first pattern layer 1700 may include spraying a first resin ink Ink1 onto the etching mask layer 1600 using a first head Head1, and forming first to third mask patterns 1710, 1720, and 1730 by curing the first resin 1700'. The mask pattern of the first pattern layer 1700 may include a nanoimprint resin. The resin may include (but is not limited to) a fluorinated monomer, an acrylate monomer, dipentaerythritol hexaacrylate, dipropylene glycol diacrylate, poly (ethylene glycol) phenyl ether acrylate, butylated hydroxytoluene (BHT), or 1-hydroxy-cyclohexyl phenyl ketone (photoinitiator 184).

[0217] The first pattern layer 1700 may include a first mask pattern 1710 formed in the first area WA1, a second mask pattern 1720 formed in the second area WA2, and a third mask pattern 1730 formed in the third area WA3. The first mask pattern 1710, the second mask pattern 1720, and the third mask pattern 1730 may be spaced apart from each other.

[0218] Figure 15 1 is a plan view of the semiconductor structure 3000 on which the first pattern layer 1700 is formed as seen from above. Figure 15 As shown in FIG, the semiconductor structure 3000 may include a first area WA1, a second area WA2, and a third area WA3 in which an active layer 3300 having different light emitting characteristics is located. In the drawing, the first area WA1 surrounds the second area WA2, and the second area WA2 surrounds the third area WA3. However, the disclosure is not limited thereto.

[0219] The first mask pattern 1710, the second mask pattern 1720, and the third mask pattern 1730 of the first pattern layer 1700 may be spaced apart from each other and may be formed in the first area WA1, the second area WA2, and the third area WA3, respectively. The gaps between the first mask pattern 1710, the second mask pattern 1720, and the third mask pattern 1730 and their shapes may vary depending on the shape of the light-emitting element 300 to be manufactured. In some embodiments, the first mask pattern 1710, the second mask pattern 1720, and the third mask pattern 1730 may have the same diameter or width. That is, the first width rn1 of the first mask pattern 1710 may be equal to the second width rn2 of the second mask pattern 1720 and the third width rn3 of the third mask pattern 1730. In subsequent processes, the semiconductor structure 3000 is etched along the gaps between the first mask pattern 1710, the third mask pattern 1720, and the third mask pattern 1730 of the first pattern layer 1700. Therefore, the shapes of the first to third mask patterns 1710, 1720, and 1730 may be substantially similar to the cross-sectional shape of the light emitting element 300. Since the first to third mask patterns 1710, 1720, and 1730 have the same diameter or width, the light emitting element 300 may have the same width.

[0220] Next, refer to Figure 16 and Figure 17 , etching the semiconductor structure 3000 along the first pattern layer 1700 to form a semiconductor crystal 3000'. The step of forming the semiconductor crystal 3000' may include: a first etching operation for forming a first etching hole Hole1 by etching the etching mask layer 1600 and the electrode material layer 3700 in the region between the first mask pattern 1710, 1720, and 1730 of the first pattern layer 1700 in a direction perpendicular to the lower substrate 1000; a second etching operation for forming a second etching hole Hole2 by etching from the second semiconductor 3200 to the first semiconductor 3100 along the first etching hole Hole1; and an operation of removing the first pattern layer 1700 and the etching mask layer 1600.

[0221] The process of etching the semiconductor structure 3000 can be performed using conventional methods. For example, the etching process can be dry etching, wet etching, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), etc. Because anisotropic etching is possible, dry etching can be suitable for vertical etching. When using the above etching methods, the etchant can be (but is not limited to) Cl2 or O2.

[0222] In some embodiments, a combination of dry etching and wet etching can be used to etch the semiconductor structure 3000. For example, dry etching can be used to perform etching in the depth direction, and then wet etching can be performed as an isotropic etch so that the etched sidewalls are located in a plane perpendicular to the surface.

[0223] A first etching operation is performed to form a first etching hole Hole1 by etching the etching mask layer 1600 and the electrode material layer 3700 along the first mask pattern of the first pattern layer 1700 to the area between the third mask patterns 1710, 1720, and 1730. The first etching hole Hole1 can be formed by removing the first pattern layer 1700, the etching mask layer 1600, and the electrode material layer 3700, and the first etching hole Hole1 can partially expose the second semiconductor 3200. Next, a second etching operation is performed to form a second etching hole Hole2 by etching from the second semiconductor 3200 to the first semiconductor 3100 along the first etching hole Hole1. Although the first etching operation and the second etching operation are shown in the drawings as being performed in separate processes, the disclosure is not limited thereto. The first etching operation and the second etching operation can also be performed continuously in a single process. Like each light emitting element 300 according to the embodiment, each of the semiconductor crystals 3000 ′ formed by etching the semiconductor structure 3000 may include a first semiconductor layer 310 , an active layer 330 , a second semiconductor layer 320 , and an electrode layer 370 .

[0224] Next, semiconductor crystal 3000' is formed by removing etching mask layer 1600 and first pattern layer 1700. Removal of etching mask layer 1600 or first pattern layer 1700 may be performed by conventional processes, such as, but not limited to, RIE or ICP-RIE.

[0225] Next, an insulating film 380 is formed to partially surround the outer surface of each of the semiconductor crystals 3000 ′.

[0226] Reference Figure 18 and Figure 19 The insulating film 380 can be formed by forming an insulating film 3800 around the outer surface of the semiconductor crystal 3000' and then partially removing the insulating film 3800 to expose the upper surface of the electrode layer 370. Since the insulating film 3800 is formed on the outer surface of the semiconductor crystal 3000' including the electrode layer 370, the insulating film 380 of the light emitting element 300 can also be formed on the outer surface of the electrode layer 370.

[0227] Insulating film 3800 is an insulating material formed on the outer surface of semiconductor crystal 3000'. Insulating film 3800 can be formed by coating or immersing the outer surface of vertically etched semiconductor crystal 3000' with an insulating material. However, the disclosure is not limited thereto. For example, insulating film 3800 can be formed by atomic layer deposition (ALD).

[0228] The insulating film 3800 can be formed not only on the side surface and the upper surface of the semiconductor crystal 3000', but also on the lower substrate 1000 exposed between the semiconductor crystals 3000' spaced apart from each other. The insulating film 3800 can be partially removed to expose the upper surface of the electrode layer 370, thereby forming the insulating film 380. The process of partially removing the insulating film 3800 can be achieved by a process such as dry etching (which is anisotropic etching) or etching back. In the accompanying drawings, the upper surface of the insulating film 3800 is removed to expose the electrode layer 370, and the upper surface of the insulating film 380 is flat. However, the disclosure is not limited thereto. In some embodiments, the outer surface of each insulating film 380 can be partially curved in the area surrounding the electrode layer 370. In the process of partially removing the insulating film 3800, not only the upper surface of the insulating film 3800 but also the side surface of the insulating film 3800 are partially removed. Therefore, each insulating film 380 surrounding the plurality of layers can be formed such that the end surface of each insulating film 380 is partially etched. In particular, when the upper surface of the insulating film 3800 is removed, the outer surface of the insulating film 380 adjacent to the electrode layer 370 in each light-emitting element 300 can be partially removed.

[0229] Next, a second pattern layer 1800 is formed on the semiconductor crystal 3000' on which the insulating film 380 is formed, and element rods (RODs) are formed, each of which includes a protrusion pattern 370P protruding from at least a portion of its upper surface. According to an embodiment, the step of forming the element rods (RODs) may include forming a second pattern layer 1800 including fourth to sixth mask patterns 1810, 1820, and 1830 spaced apart from each other, and forming the protrusion pattern 370P by partially etching the upper surface of the semiconductor crystal 3000' along a region where the fourth to sixth mask patterns 1810, 1820, and 1830 are spaced apart from each other.

[0230] like Figure 20 and Figure 21As shown in FIG, a second pattern layer 1800 is formed on a semiconductor crystal 3000′ having an insulating film 380 formed thereon. The second pattern layer 1800 may include fourth to sixth mask patterns 1810, 1820, and 1830 spaced apart from one another, namely, a fourth mask pattern 1810, a fifth mask pattern 1820, and a sixth mask pattern 1830. The fourth to sixth mask patterns 1810, 1820, and 1830 of the second pattern layer 1800 may be formed from substantially the same material as the first to third mask patterns 1710, 1720, and 1730 of the first pattern layer 1700 through the same process. As shown in the drawings, the step of forming the second pattern layer 1800 may include jetting a second resin ink Ink2 onto the semiconductor crystal 3000′ using a second head Head2, and curing the second resin 1800′ to form the fourth to sixth mask patterns 1810, 1820, and 1830. This is the same as described above, so its detailed description will be omitted.

[0231] The second pattern layer 1800 may include a fourth mask pattern 1810 formed on the semiconductor crystal 3000' at a position overlapping the first area WA1, a fifth mask pattern 1820 formed on the semiconductor crystal 3000' at a position overlapping the second area WA2, and a sixth mask pattern 1830 formed on the semiconductor crystal 3000' at a position overlapping the third area WA3. The fourth mask pattern 1810, the fifth mask pattern 1820, and the sixth mask pattern 1830 may be spaced apart from each other.

[0232] Figure 22 3 is a plan view of a semiconductor crystal 3000' on which the second pattern layer 1800 is formed as seen from above. Figure 21 and Figure 22 According to an embodiment, the second pattern layer 1800 may include fourth to sixth mask patterns 1810, 1820, and 1830 that are different from each other. The fourth mask pattern 1810, the fifth mask pattern 1820, and the sixth mask pattern 1830 may each include multiple pattern portions, and may each include a different number of pattern portions. The pattern portions may be spaced apart from each other to form each of the fourth to sixth mask patterns 1810, 1820, and 1830. In the accompanying drawings, the pattern portions of each of the fourth to sixth mask patterns 1810, 1820, and 1830 are formed so that any one pattern portion surrounds another pattern portion. However, the disclosure is not limited thereto. The shapes of the fourth to sixth mask patterns 1810, 1820, and 1830 may vary depending on the shape of the protrusion pattern 370P to be formed on the light-emitting element 300.

[0233] Each of the fourth mask patterns 1810 formed on the semiconductor crystal 3000' at a position overlapping the first area WA1 may include three pattern portions. Each of the fifth mask patterns 1820 formed on the semiconductor crystal 3000' at a position overlapping the second area WA2 may include two pattern portions, and the sixth mask pattern 1830 formed on the semiconductor crystal 3000' at a position overlapping the third area WA3 may include one pattern portion.

[0234] Reference Figure 23 and Figure 24 The upper surface of the semiconductor crystal 3000 ′ is partially etched along the fourth to sixth mask patterns 1810 , 1820 , and 1830 of the second pattern layer 1800 to form an element rod ROD having a protrusion pattern 370P.

[0235] As described above, the method for manufacturing the light emitting element 300 according to the embodiment includes forming a protrusion pattern 370P on the semiconductor crystal 3000'. During the formation of the protrusion pattern 370P, the fourth to sixth mask patterns 1810, 1820, and 1830 of the second pattern layer 1800 may have different shapes, and the manufactured light emitting element 300 may include different protrusion patterns 370P in different areas WA of the semiconductor structure 3000.

[0236] For example, since the fourth mask pattern 1810 is formed in the first area WA1, the light emitting element 300 formed in the first area WA1 may have Figure 8 Since the fifth mask pattern 1820 is formed in the second area WA2, the light emitting element 300 formed in the second area WA2 may be a first light emitting element 301 having a first protrusion pattern 371P. Figure 8 Since the sixth mask pattern 1830 is formed in the third area WA3, the light emitting element 300 formed in the third area WA3 may be a second light emitting element 302 having a second protrusion pattern 372P. Figure 8 The third light emitting element 303 has a third protrusion pattern 373P.

[0237] The light-emitting element 300 manufactured using the semiconductor structure 3000 may include different protrusion patterns 370P defined in different areas WA in the semiconductor structure 3000. When there are differences in the light-emitting characteristics of the manufactured light-emitting elements 300, the area WA in which the corresponding light-emitting element 300 is formed in the semiconductor structure 3000 can be tracked by the protrusion pattern 370P of the light-emitting element 300, and the light-emitting characteristics of the area WA in the semiconductor structure 3000 can be adjusted. Therefore, the light-emitting element 300 manufactured on the lower substrate 1000 can have uniform light-emitting characteristics.

[0238] Finally, if Figure 25 As shown in FIG, the element rod ROD is separated from the lower substrate 1000 to manufacture the light emitting element 300. The manufactured light emitting element 300 may include different protrusion patterns 370P in different areas WA of the semiconductor structure 3000. The light emitting element 300 may include a first light emitting element 301, a second light emitting element 302, and a third light emitting element 303 having protrusion patterns 370P of different shapes.

[0239] The light-emitting element 300 according to the embodiment can be manufactured using the above-described process. The method for manufacturing the light-emitting element 300 may include defining a plurality of areas WA in a semiconductor structure 3000, etching the semiconductor structure 3000 according to a first pattern layer 1700, and forming a protrusion pattern 370P according to a second pattern layer 1800. The first to third mask patterns 1710, 1720, and 1730 of the first pattern layer 1700 may have the same shape, even though the first to third mask patterns 1710, 1720, and 1730 are disposed in different areas WA of the semiconductor structure 3000. However, the fourth to sixth mask patterns 1810, 1820, and 1830 of the second pattern layer 1800 may have different shapes in different areas WA. Therefore, the manufactured light-emitting element 300 may have the same shape or diameter in different areas WA of the semiconductor structure 3000, but the shape of the protrusion pattern 370P may be different. The position where each light-emitting element 300 is formed in the semiconductor structure 3000 can be identified by the shape of the protrusion pattern 370P of the light-emitting element 300. Since the light-emitting element 300 is manufactured to have different protrusion patterns 370P defined in different regions of the semiconductor structure 3000, the protrusion pattern 370P of the light-emitting element 300 can be used to identify the region of the semiconductor structure 3000 in which the light-emitting element 300 is manufactured, and the light emission characteristics of light emitted from the region WA of the semiconductor structure 3000 can be adjusted. Therefore, the light-emitting element 300 having uniform light emission characteristics can be manufactured by repeating the manufacturing process multiple times, and the display device 10 including the light-emitting element 300 having different protrusion patterns 370P can have uniform light emission characteristics in each sub-pixel PXn.

[0240] A method of manufacturing the light emitting element 300 and the light emitting element 300 according to various embodiments will now be described.

[0241] Figures 26 to 28 is a plan view illustrating the shape of a second pattern layer according to an embodiment.

[0242] During the process of manufacturing the light emitting element 300, the shapes of the fourth to sixth mask patterns 1810, 1820, and 1830 of the second pattern layer 1800 are not limited to Figure 22 The shape shown in .

[0243] First, refer to Figure 26 , the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 of the second pattern layer 1800_1 according to the embodiment may each include a plurality of pattern portions spaced apart from each other. Figure 22 The embodiment of the present invention is different in the shapes of the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1. Therefore, any redundant description will be omitted, and the differences will be mainly described below.

[0244] exist Figure 26 In the second pattern layer 1800_1, the pattern portions of the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 may have a shape in which a plurality of pattern portions are spaced apart from one another, rather than any one pattern portion surrounding another pattern portion. However, the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 may include different numbers of pattern portions in different areas WA in which the second pattern layer 1800_1 is formed.

[0245] Each of the fourth mask patterns 1810_1 formed in the first area WA1 may include four different pattern portions spaced apart from one pattern portion in the vertical and horizontal directions. Each of the fifth mask patterns 1820_1 formed in the second area WA2 may include four patterns without a pattern portion located at the center of each fourth mask pattern 1810_1. The sixth mask pattern 1830_1 formed in the third area WA3 may include only one pattern portion located at the center of each fourth mask pattern 1810_1.

[0246] The shape of the protrusion pattern 370P of the manufactured light-emitting element 300 can vary according to the shapes of the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1. The first light-emitting element 301 having the first protrusion pattern 371P according to the fourth mask pattern 1810_1 can each include five protrusions, the second light-emitting element 302 having the second protrusion pattern 372P according to the fifth mask pattern 1820_1 can each include four protrusions, and the third light-emitting element 303 having the third protrusion pattern 373P according to the sixth mask pattern 1830_1 can include one protrusion. According to an embodiment, the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 of the second pattern layer 1800_1 are not particularly limited in shape and number and may be variously modified, as long as the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 are provided in different shapes and numbers in different areas WA defined in the semiconductor structure 3000. The first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 may include different protrusion patterns 370P depending on the shapes of the fourth to sixth mask patterns 1810_1, 1820_1, and 1830_1 of the second pattern layer 1800_1. Thus, the area WA in which the first light-emitting element 301, the second light-emitting element 302, and the third light-emitting element 303 are formed in the semiconductor structure 3000 can be tracked.

[0247] Next, refer to Figure 27 , the fourth to sixth mask patterns 1810_2, 1820_2, and 1830_2 of the second pattern layer 1800_2 according to the embodiment may include pattern portions having different shapes. Figure 26 The difference of the embodiment is the shapes of the fourth to sixth mask patterns 1810_2, 1820_2, and 1830_2. Therefore, any redundant description will be omitted and the differences will be mainly described below. Figure 27 In the second pattern layer 1800_2, any one of the pattern portions of each of the fourth to sixth mask patterns 1810_2, 1820_2, and 1830_2 may have a shape other than a circular shape. Although any one of the pattern portions of each of the fourth to sixth mask patterns 1810_2, 1820_2, and 1830_2 has a different shape in the drawings, the disclosure is not limited thereto. The fourth to sixth mask patterns 1810_2, 1820_2, and 1830_2 may include pattern portions having different shapes in different areas WA in which the second pattern layer 1800_2 is formed. The second pattern layer 1800_2 according to the current embodiment and Figure 26The difference between the embodiment of the present invention is that the fourth to sixth mask patterns 1810_2, 1820_2 and 1830_2 are distinguished not by the number of pattern portions but by the shape of the pattern portions. Other details are substantially the same, so detailed description thereof will be omitted.

[0248] In the above-described embodiment, the area WA defined in the semiconductor structure 3000 changes from the center toward the periphery of the semiconductor structure 3000. In this case, the fourth to sixth mask patterns 1810, 1820, and 1830 of the second pattern layer 1800 may include different pattern portions from the center toward the periphery of the semiconductor structure 3000. However, the shape of the area WA defined in the semiconductor structure 3000 is not necessarily limited thereto.

[0249] Reference Figure 28 , the region WA defined in the semiconductor structure 3000 may be changed from one side of the semiconductor structure 3000 toward the other side. Due to the changed position of the region WA defined in the semiconductor structure 3000, the current embodiment is different from Figure 22 The difference of the embodiment is that the positions of the fourth to sixth mask patterns 1810_3, 1820_3 and 1830_3 of the second pattern layer 1800_3 are different. Figure 28 , the shapes of the pattern portions of the fourth to sixth mask patterns 1810_3, 1820_3, and 1830_3 are not shown. However, it is obvious that the shapes of the pattern portions of the fourth to sixth mask patterns 1810_3, 1820_3, and 1830_3 can be obtained from the Figure 22 、 Figure 26 and Figure 27 Therefore, any redundant description will be omitted and the differences will be mainly described below.

[0250] As described above, when the semiconductor structure 3000 is formed by depositing a precursor material on the lower substrate 1000, the distribution of the precursor material disposed on the lower substrate 1000 may be non-uniform. The arrangement of the area WA defined in the semiconductor structure 3000 may vary depending on the uniformity of the precursor material distribution.

[0251] exist Figure 28 In this case, the first area WA1 can be formed on one side of the semiconductor structure 3000, and the second area WA2 and the third area WA3 can be sequentially formed toward the other side opposite to the first area. Therefore, the arrangement of the fourth to sixth mask patterns 1810_3, 1820_3, and 1830_3 of the second pattern layer 1800_3 can also be changed.

[0252] The fourth mask pattern 1810_3, the fifth mask pattern 1820_3, and the sixth mask pattern 1830_3 may be formed in the first area WA1, the second area WA2, and the third area WA3, respectively, and the shape of the second pattern layer 1800_3 may change from one side to the other along an axis intersecting the center of the semiconductor structure 3000. However, the disclosure is not limited to this, and the opposite description is also true. The fourth to sixth mask patterns 1810_3, 1820_3, and 1830_3 of the second pattern layer 1800_3 may have various shapes, arrangements, diameters, etc. in different areas WA defined in the semiconductor structure 3000.

[0253] Figure 29 and Figure 30 is a cross-sectional view showing part of a process of manufacturing a light emitting element according to an embodiment.

[0254] According to embodiments, the second pattern layer 1800 for forming the protrusion pattern 370P may not necessarily be formed on the semiconductor crystal 3000' on which the insulating film 380 is formed. In some cases, the second pattern layer 1800 may be formed on the semiconductor structure 3000 or may be formed on the semiconductor crystal 3000' before forming the insulating film 380.

[0255] Reference Figure 29 Before forming the first pattern layer 1700, a second pattern layer 1800_4 including fourth to sixth mask patterns 1810_4, 1820_4, and 1830_4 according to an embodiment may be formed on the semiconductor structure 3000. The current embodiment differs in that the order of forming the first pattern layer 1700 and the second pattern layer 1800_4 is reversed. In an embodiment, a method for manufacturing a light-emitting element 300 may include forming a second pattern layer 1800_4 on the semiconductor structure 3000, forming a protrusion pattern 370P along the second pattern layer 1800_4, forming a first pattern layer 1700 on the semiconductor structure 3000, and forming an element rod ROD by etching the semiconductor structure 3000 along the first pattern layer 1700. That is, the second pattern layer 1800_4 may be formed before etching the semiconductor structure 3000 in a direction perpendicular to the lower substrate 1000. Although not shown in the drawings, the semiconductor structure 3000 may be etched after the protrusion pattern 370P is formed, thereby forming semiconductor crystals 3000'. Except for the order of the process for forming the second pattern layer 1800_4, the present embodiment is the same as described above, and therefore a detailed description thereof will be omitted.

[0256] Next, refer to Figure 30According to an embodiment, the second pattern layer 1800 may be formed before forming the insulating film 380 surrounding the outer circumferential surface of the semiconductor crystal 3000'. Figure 20 The embodiment of the present invention is different in that the second resin ink ink2 for forming the second pattern layer 1800 is ejected on the semiconductor crystal 3000' on which the insulating film 380 is not formed. Other details are the same, so a detailed description thereof will be omitted.

[0257] According to an embodiment, the second pattern layer 1800 for forming the protrusion pattern 370P may be formed before forming the electrode material layer 3700 of the semiconductor structure 3000. That is, the protrusion pattern 370P of the light emitting element 300 may be formed on the surface of the electrode layer 370 contacting the second semiconductor layer 320.

[0258] Figure 31a and Figure 31b is a cross-sectional view of a light emitting element according to an embodiment.

[0259] Reference Figure 31a and Figure 31b , the light emitting element 300_6 according to the embodiment may include a second protrusion pattern 320P_6 formed on a contact surface between the electrode layer 370_6 and the second semiconductor layer 320_6, and the second protrusion pattern 320P_6 may contact the second semiconductor layer 320_6. Figure 31a In the light emitting element 300_6, the second protrusion pattern 320P_6 is formed only between the electrode layer 370_6 and the second semiconductor layer 320_6. Figure 31b In the light emitting element 300_6, in addition to the second protrusion pattern 320P_6, the first protrusion pattern 370P_6 is also formed. Figure 7 The embodiment of the present invention is different in that the position of the second protrusion pattern 320P_6 and the shapes of the second semiconductor layer 320_6 and the electrode layer 370_6. Figure 31a and Figure 31b The description of layers 310_6, 330_6, and 380_6 in is similar to Figure 6 The description of layers 310, 330 and 380 in FIG. 1 is omitted, and therefore, any redundant description will be omitted, and the differences will be mainly described below.

[0260] exist Figure 31a and Figure 31bIn the light-emitting element 300_6 of the embodiment, during the manufacturing process of the light-emitting element 300_6, a second protrusion pattern 320P_6 may be further formed between the second semiconductor layer 320_6 and the electrode layer 370_6 by performing a process of forming a second pattern layer 1800 on the second semiconductor layer 3200 of the semiconductor structure 3000. The second protrusion pattern 320P_6 may include a protrusion protruding from at least a portion of the upper surface of the second semiconductor layer 320_6. The surface of the electrode layer 370_6 may be at least partially recessed to contact the protrusion of the second protrusion pattern 320P_6. As a result, both end surfaces of the light-emitting element 300_6 may form substantially flat surfaces.

[0261] like Figure 31a As shown in FIG, even if the protrusion pattern 370P is not formed on the end surface of the light-emitting element 300, the shape of the protrusion pattern 370P can be identified by the cross-section of the light-emitting element 300 having different light-emitting characteristics. Therefore, the area WA of the semiconductor structure 3000 in which the light-emitting element 300 is formed can be identified, and the light-emitting characteristics of the area WA can be adjusted. However, the disclosure is not limited to this, and the light-emitting element 300_6 can also include multiple protrusion patterns (e.g., a first protrusion pattern 370P_6 and a second protrusion pattern 320P_6).

[0262] The structure of the light emitting element 300 is not limited to Figure 6 In addition to the structure shown in FIG, the light emitting element 300 may also have other structures.

[0263] Figure 32 is a schematic diagram of a light emitting element according to an embodiment. Figure 33 It is along Figure 32 A cross-sectional view taken along line VI-VI'.

[0264] Reference Figure 32 and Figure 33 According to the embodiment, the light emitting element 300'_7 may further include a third semiconductor layer 330'_7 disposed between the first semiconductor layer 310'_7 and the active layer 360'_7, and a fourth semiconductor layer 340'_7 and a fifth semiconductor layer 350'_7 disposed between the active layer 360'_7 and the second semiconductor layer 320'_7. Figure 32 and Figure 33 The light emitting element 300'_7 and Figure 6 The embodiment of the present invention is different in that a plurality of semiconductor layers 330'_7, 340'_7 and 350'_7 and an electrode layer 372'_7 are further provided, and the active layer 360'_7 includes different elements. The arrangement and structure of the insulating film 380'_7 are similar to those of FIG. Figure 6 The arrangement and structure of the insulating film 380 are basically the same. Figure 32In the description, some components are given new reference numerals for convenience, even though they are identical to Figure 6 Any redundant description will be omitted, and the differences will be mainly described below.

[0265] As described above, since the active layer 330 includes nitrogen (N), Figure 6 The light emitting element 300 can emit blue light or green light. Figure 32 and Figure 33 In the light-emitting element 300'_7, each of the active layer 360'_7 and the other semiconductor layers can be a semiconductor containing at least phosphorus (P). That is, the light-emitting element 300'_7 according to the embodiment can emit red light with a central wavelength band within the range of 620nm to 750nm. However, the central wavelength band of red light is not limited to the above range and should be understood to include all wavelength ranges that can be recognized as red in the field of disclosure.

[0266] Specifically, the first semiconductor layer 310'_7 may be an n-type semiconductor layer. When the light emitting element 300'_7 emits red light, the first semiconductor layer 310'_7 may include a semiconductor layer having a chemical formula In x Al y Ga 1-x-y P (0≤x≤1, 0≤y≤1, 0≤x+y≤1) semiconductor material. For example, the first semiconductor layer 310'_7 can be any one or more of n-type doped InAlGaP, GaP, AlGaP, InGaP, AlP, and InP. The first semiconductor layer 310'_7 can be doped with an n-type dopant, and the n-type dopant can be, for example, Si, Ge, Sn, or Se. In an embodiment, the first semiconductor layer 310'_7 can be n-AlGaInP doped with n-type Si. The length of the first semiconductor layer 310'_7 can be in the range of (but not limited to) 1.5 μm to 5 μm.

[0267] The second semiconductor layer 320'_7 may be a p-type semiconductor layer. When the light emitting element 300'_7 emits red light, the second semiconductor layer 320'_7 may include a p-type semiconductor layer having a chemical formula In x Al y Ga 1-x-yThe second semiconductor layer 320'_7 may be a semiconductor material of P (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second semiconductor layer 320'_7 may be any one or more of p-type doped InAlGaP, GaP, AlGaNP, InGaP, AlP, and InP. The second semiconductor layer 320'_7 may be doped with a p-type dopant, such as Mg, Zn, Ca, or Ba. In an embodiment, the second semiconductor layer 320'_7 may be p-GaP doped with p-type Mg. The length of the second semiconductor layer 320'_7 may be in the range of (but not limited to) 0.08 μm to 0.25 μm.

[0268] The active layer 360'_7 may be disposed between the first semiconductor layer 310'_7 and the second semiconductor layer 320'_7. Figure 6 The active layer 330, Figure 32 and Figure 33 The active layer 360'_7 can include a material having a single quantum well structure or a multiple quantum well structure to emit light in a specific wavelength band. For example, when the active layer 360'_7 emits light in the red wavelength band, the active layer 360'_7 can include a material such as AlGaP or AlInGaP. In particular, when the active layer 360'_7 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers can include materials such as AlGaP or AlInGaP, and the well layers can include materials such as GaP or AlInP. In an embodiment, the active layer 360'_7' can include AlGaInP as the quantum layers and AlInP as the well layers to emit red light with a central wavelength band within the range of 620nm to 750nm.

[0269] Figure 32 and Figure 33 The light emitting element 300'_7 may include a cladding layer disposed adjacent to the active layer 360'_7. As shown in the drawings, the third semiconductor layer 330'_7 and the fourth semiconductor layer 340'_7 disposed between the first semiconductor layer 310'_7 below the active layer 360'_7 and the second semiconductor layer 320'_7 above the active layer 360'_7 may be cladding layers.

[0270] The third semiconductor layer 330'_7 may be disposed between the first semiconductor layer 310'_7 and the active layer 360'_7. Similar to the first semiconductor layer 310'_7, the third semiconductor layer 330'_7 may be an n-type semiconductor. For example, the third semiconductor layer 330'_7 may include a semiconductor having a chemical formula of In x Al y Ga 1-x-yIn an embodiment, the first semiconductor layer 310 ′_7 may be n-AlGaInP, and the third semiconductor layer 330 ′_7 may be n-AlInP. However, the disclosure is not limited thereto.

[0271] The fourth semiconductor layer 340'_7 may be disposed between the active layer 360'_7 and the second semiconductor layer 320'_7. Similar to the second semiconductor layer 320'_7, the fourth semiconductor layer 340'_7 may be a p-type semiconductor. For example, the fourth semiconductor layer 340'_7 may include a semiconductor having a chemical formula of In x Al y Ga 1-x-y The semiconductor material may be P (0≤x≤1, 0≤y≤1, 0≤x+y≤1). In an embodiment, the second semiconductor layer 320 ′_7 may be p-GaP, and the fourth semiconductor layer 340 ′_7 may be p-AlInP.

[0272] The fifth semiconductor layer 350'_7 may be disposed between the fourth semiconductor layer 340'_7 and the second semiconductor layer 320'_7. Similar to the second semiconductor layer 320'_7 and the fourth semiconductor layer 340'_7, the fifth semiconductor layer 350'_7 may be a p-type doped semiconductor. In some embodiments, the fifth semiconductor layer 350'_7 may be used to reduce the difference in lattice constant between the fourth semiconductor layer 340'_7 and the second semiconductor layer 320'_7. In other words, the fifth semiconductor layer 350'_7 may be a tensile strain barrier reducing layer. For example, the fifth semiconductor layer 350'_7 may include (but is not limited to) p-GaInP, p-AlInP, or p-AlGaInP.

[0273] and Figure 6 Unlike the light-emitting element 300, the first electrode layer 371'_7 and the second electrode layer 372'_7 can be respectively provided on the first semiconductor layer 310'_7 and the second semiconductor layer 320'_7. The first electrode layer 371'_7 can be provided on the lower surface of the first semiconductor layer 310'_7, and the second electrode layer 372'_7 can be provided on the upper surface of the second semiconductor layer 320'_7. However, the disclosure is not limited thereto, and at least any one of the first electrode layer 371'_7 and the second electrode layer 372'_7 can be omitted. For example, in the light-emitting element 300'_7, the first electrode layer 371'_7 may not be provided on the lower surface of the first semiconductor layer 310'_7 (e.g., Figure 6 As in the light emitting element 300 of FIG. 1 , only one second electrode layer 372 ′_7 may be provided on the upper surface of the second semiconductor layer 320 ′_7.

[0274] Figure 32 and Figure 33The light emitting element 300'_7 can also be Figure 6 That is, the light emitting element 300 can be manufactured in a substantially similar manner. That is, the semiconductor structure 3000 including a plurality of semiconductor layers and an active layer 360'_7 can be formed by forming a protrusion pattern 370P'_7 through a second pattern layer 1800. Figure 32 and Figure 33 However, the light emitting element 300'_7 according to the current embodiment is different in that the semiconductor structure 3000 includes a greater number of electrode material layers and semiconductor layers. This is substantially the same as described above, so a detailed description thereof will be omitted.

[0275] According to some embodiments, the electrode stem portions 210S and 220S extending in the first direction DR1 may be omitted from the first and second electrodes 210 and 220 .

[0276] Figure 34 is a plan view of a sub-pixel of a display device according to an embodiment.

[0277] Reference Figure 34 In the display device 10_8, the first electrode 210_8 and the second electrode 220_8 may extend in one direction (ie, the second direction DR2). The first electrode 210_8 and the second electrode 220_8 may not include the electrode stem portions 210S and 220S extending in the first direction DR1. Figure 34 The display device 10_8 and Figure 3 The difference between the display device 10 and the display device 10_8 is that the display device 10_8 does not include the electrode trunk portions 210S and 220S and includes one more second electrode 220_8. Figure 34 The lines Xa-Xa', Xb-Xb' and Xc-Xc' (similar Figure 4 ) can be cut into sections with Figure 4 Basically the same. Any redundant description will be omitted, and the differences will be mainly described below.

[0278] like Figure 34 As shown in FIG, a plurality of first electrodes 210_8 and a plurality of second electrodes 220_8 may extend in the second direction DR2 in each sub-pixel PXn. The outer bank 430 may also extend in the second direction DR2. The second electrode 220_8 and the outer bank 430 may also extend to other sub-pixels PXn adjacent to each other in the second direction DR2. Therefore, adjacent sub-pixels PXn in the second direction DR2 may receive the same electrical signal from the second electrode 220_8.

[0279] and Figure 3 The display device 10 is different. Figure 34In the display device 10_8, a second electrode contact hole CNTS may be provided in each of the second electrodes 220_8. Each of the second electrodes 220_8 may be electrically connected to the power electrode 162 of the circuit element layer PAL through the second electrode contact hole CNTS located in each sub-pixel PXn. Although the second electrode contact hole CNTS is formed in each of the two second electrodes 220_8 in the drawings, the disclosure is not limited thereto.

[0280] On the other hand, the first electrode 210_8 may extend in the second direction DR2, but may terminate at the boundary of each sub-pixel PXn. Adjacent sub-pixels PXn in the second direction DR2 may each include a first electrode 210_8 spaced apart from each other, and may receive different electrical signals through the first electrode contact hole CNTD. This shape of the first electrode 210_8 may be formed during the process of manufacturing the display device 10 by forming the first electrode 210_8 extending in the second direction DR2 and then cutting the first electrode 210_8 at the boundary between adjacent sub-pixels PXn. Figure 34 In the embodiment, the light emitting element 300_8 between one first electrode 210_8 and one second electrode 220_8 may be connected in parallel to the light emitting element 300_8 between another first electrode 210_8 and another second electrode 220_8.

[0281] exist Figure 34 In the display device 10_8 of FIG. 1 , some of the electrodes 210_8 and 220_8 may be floating electrodes that are not electrically connected to the circuit element layer PAL through the electrode contact holes CNTD and CNTS. For example, only the outermost electrodes among the electrodes 210_8 and 220_8 may receive electrical signals through the electrode contact holes CNTD and CNTS, and the electrodes 210_8 and 220_8 disposed therebetween may not directly receive electrical signals. In this case, some of the second electrodes 220_8 (e.g., second electrodes 220_8 disposed between different first electrodes 210_8) may extend in the second direction DR2, but (similar to the first electrodes 210_8) may terminate at the boundary of each subpixel PXn so as not to be located in another subpixel PXn. When some of the electrodes 210_8 and 220_8 are floating electrodes, the light-emitting elements 300 disposed therebetween may be partially connected in series in addition to being connected in parallel. The outer bank 430 may be provided at a boundary between sub-pixels PXn adjacent to each other along the first direction DR1 to extend in the second direction DR2. Although not shown in the drawings, the outer bank 430 may also be provided at a boundary between sub-pixels PXn adjacent to each other along the second direction DR2 to extend in the first direction DR1. The outer bank 430 is similar to the outer bank 430 described above with reference to FIG. Figure 3 The outer bank 430 is the same as described above. Figure 34The display device 10_8 includes a first contact electrode 261_8 and a second contact electrode 262_8. Figure 3 The first contact electrode 261 and the second contact electrode 262 included in the display device 10 are substantially the same.

[0282] exist Figure 34 In the display device 10_8, two first electrodes 210_8 and two second electrodes 220_8 are provided and alternately spaced apart from each other. However, the disclosure is not limited thereto, and some electrodes may be omitted, or more electrodes may be provided in the display device 10_8.

[0283] In the display device 10, the first electrode 210 and the second electrode 220 may not necessarily extend in one direction. The first electrode 210 and the second electrode 220 of the display device 10 are not limited to a specific shape as long as they are spaced apart from each other to provide a space in which the light emitting element 300 is disposed.

[0284] Figure 35 is a plan view of a pixel of a display device according to an embodiment.

[0285] Reference Figure 35 , the first electrode 210_9 and the second electrode 220_9 of the display device 10_9 according to the embodiment may be at least partially bent, and the bent region of the first electrode 210_9 and the bent region of the second electrode 220_9 may be spaced apart to face each other. Figure 35 The display device 10_9 and Figure 2 The display device 10 is different in the shape of each of the first electrode 210_9 and the second electrode 220_9. Therefore, any redundant description will be omitted, and the differences will be mainly described below.

[0286] Figure 35 The first electrode 210_9 of the display device 10_9 may include a plurality of holes HOL. For example, as shown in the accompanying drawings, the first electrode 210_9 may include a first hole HOL1, a second hole HOL2, and a third hole HOL3 arranged along the second direction DR2. However, the disclosure is not limited thereto, and the first electrode 210_9 may include a larger or smaller number of holes HOL, or may include only one hole HOL. The following describes a case where the first electrode 210_9 includes the first hole HOL1, the second hole HOL2, and the third hole HOL3 as an example.

[0287] In an embodiment, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 may have a circular planar shape. Thus, the first electrode 210_9 may include a curved region formed by each of the holes HOL and may face the second electrode 220_9 in the curved region. However, this is merely an example and the disclosure is not limited thereto. As long as the first hole HOL1, the second hole HOL2, and the third hole HOL3 can provide a space in which the second electrode 220_9 is disposed, as will be described later, each of the first hole HOL1, the second hole HOL2, and the third hole HOL3 is not limited to a specific shape and may have various planar shapes such as an elliptical shape and a quadrilateral or more polygonal shape.

[0288] The second electrode 220_9 may be provided in a plurality in each sub-pixel PXn. For example, three second electrodes 220_9 may be provided in each sub-pixel PXn to correspond to the first hole HOL1 to the third hole HOL3 of the first electrode 210_9. The second electrode 220_9 may be located in each of the first hole HOL1 to the third hole HOL3 and may be surrounded by the first electrode 210_9.

[0289] In an embodiment, the hole HOL of the first electrode 210_9 may have a curved outer surface, and the second electrode 220_2 disposed in the hole HOL of the first electrode 210_9 may have a curved outer surface and may be spaced apart from the first electrode 210_9 to face the first electrode 210_9. Figure 35 As shown in FIG, the first electrode 210_9 may include a hole HOL having a circular shape in a plan view, and the second electrode 220_9 may have a circular shape in a plan view. The curved surface of the region where the hole HOL of the first electrode 210_9 is formed may be spaced apart from the curved outer surface of the second electrode 220_9 so as to face them. For example, the first electrode 210_9 may surround the outer surface of the second electrode 220_9.

[0290] As described above, the light-emitting element 300_9 may be disposed between the first electrode 210_9 and the second electrode 220_9. The display device 10_9 according to the current embodiment may include a circular second electrode 220_9 and a first electrode 210_9 surrounding the second electrode 220_9. The light-emitting element 300_9 may be arranged along the outer surface of the second electrode 220_9. Since the light-emitting element 300_9 extends in one direction as described above, the light-emitting element 300_9 may be arranged along the curved outer surface of the second electrode 220_9 in each subpixel PXn, such that the extension direction of the light-emitting element 300_9 faces different directions. Each subpixel PXn may have various light emission directions depending on the direction the extension direction of the light-emitting element 300_9 faces. In the display device 10_9 according to the current embodiment, since the first electrode 210_9 and the second electrode 220_9 are provided to have a bent shape, the light emitting element 300_9 provided between the first electrode 210_9 and the second electrode 220_9 can face different directions and the lateral visibility of the display device 10_9 can be improved.

[0291] In summarizing the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the preferred embodiments without departing substantially from the principles of the invention. Therefore, the disclosed preferred embodiments of the invention are used in a generic and descriptive sense only and not for the purpose of limitation.

Claims

1. A rod-shaped light-emitting element provided in a pixel of a display device, the light-emitting element comprising: a first semiconductor layer and a second semiconductor layer; an active layer, disposed between the first semiconductor layer and the second semiconductor layer; an electrode layer provided on the entire upper surface of the second semiconductor layer and including a first surface and a second surface facing the first surface and contacting the second semiconductor layer; as well as an insulating film at least partially surrounding side surfaces of the first and second semiconductor layers and at least a side surface of the active layer, wherein at least one of the first surface and the second surface of the electrode layer includes a protrusion pattern protruding from a portion thereof, wherein the protrusion pattern comprises: a first protrusion; a second protrusion spaced apart from the first protrusion; and a recess located between the first protrusion and the second protrusion, and Wherein, the second protrusion surrounds the first protrusion.

2. The light-emitting element according to claim 1, wherein The protrusion pattern further includes a third protrusion spaced apart from the first protrusion and the second protrusion.

3. The light-emitting element according to claim 2, wherein The third protrusion is formed to surround an outer surface of the second protrusion, and the recess is formed between the second protrusion and the third protrusion.

4. The light-emitting element according to claim 1, wherein The first protrusion includes a region having the same width as that of the second protrusion.

5. The light-emitting element according to claim 4, wherein The first protrusion includes a region having a width equal to a distance between the first protrusion and the second protrusion. The light-emitting element according to claim 1 , wherein The protrusion pattern includes a first protrusion pattern formed on the first surface, and the light emitting element extends in one direction and includes a first end surface on which the first protrusion pattern is formed and a second end surface on which a surface of the first semiconductor layer is formed.

7. The light-emitting element according to claim 6, wherein The first end surface and the second end surface have different roughnesses.

8. The light-emitting element according to claim 1, wherein The electrode layer includes a second protrusion pattern formed on the second surface to contact the second semiconductor layer, and at least a portion of a surface of the second semiconductor layer contacting the second surface of the electrode layer is recessed to contact the protrusions of the second protrusion pattern.

9. The light-emitting element according to claim 8, wherein The protrusion pattern is also formed on the first surface.

10. A method for manufacturing a light-emitting element, the method comprising the following steps: Disposing a semiconductor structure formed on a substrate; as well as forming a plurality of element bars by etching the semiconductor structure, each element bar including a protrusion pattern protruding from at least a portion of the upper surface, Wherein, different protrusion patterns are formed in different regions of the semiconductor structure, Among them, the steps of forming the multiple element rods include: forming a first pattern layer including first mask patterns spaced apart from each other on the semiconductor structure; forming a semiconductor crystal by etching the semiconductor structure along the area between the first mask patterns spaced apart from each other; forming a second pattern layer including second mask patterns spaced apart from each other on the semiconductor crystal; and forming the multiple element rods including protrusion patterns by partially etching the upper surface of the semiconductor crystal along the area where the second mask patterns are spaced apart from each other.

11. The method according to claim 10, wherein: After forming an insulating film around the outer circumferential surface of each of the semiconductor crystals, the second pattern layer forming step is performed.

12. The method according to claim 10, wherein: The semiconductor structure includes a first region and a second region different from the first region, and the plurality of element bars include a first element bar formed in the first region and a second element bar formed in the second region.

13. The method according to claim 12, wherein: In the first pattern layer, the first mask pattern disposed in the first region and the first mask pattern disposed in the second region have the same shape.

14. The method according to claim 13, wherein The first element rod and the second element rod have the same diameter.

15. The method according to claim 12, wherein: In the second pattern layer, the second mask pattern disposed in the first region and the second mask pattern disposed in the second region have different shapes.

16. The method according to claim 15, wherein The first protrusion pattern formed on the upper surface of the first element bar has a shape different from a shape of the second protrusion pattern formed on the upper surface of the second element bar.

17. The method according to claim 12, wherein: The first region and the second region have different luminescence amounts.

18. A method for manufacturing a light-emitting element, the method comprising the following steps: Disposing a semiconductor structure formed on a substrate; as well as forming a plurality of element bars by etching the semiconductor structure, each element bar including a protrusion pattern protruding from at least a portion of the upper surface, Wherein, different protrusion patterns are formed in different regions of the semiconductor structure, Among them, the steps of forming the multiple element rods include: forming a third mask layer on the semiconductor structure, which includes third mask patterns spaced apart from each other; forming the protrusion pattern by partially etching the upper surface of the semiconductor structure along the area where the third mask patterns are spaced apart from each other; forming a fourth mask layer on the semiconductor structure, which includes fourth mask patterns spaced apart from each other; and forming the multiple element rods by etching the semiconductor structure along the area between the fourth mask patterns spaced apart from each other.

19. A display device, comprising: a first electrode and a second electrode spaced apart from the first electrode; as well as at least one light emitting element disposed between the first electrode and the second electrode and each light emitting element including a pattern portion formed on an end surface, the at least one light emitting element being in a rod shape, Each of the at least one light-emitting elements includes: a first semiconductor layer and a second semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; an electrode layer disposed on the entire surface of the second semiconductor layer and including a protrusion pattern protruding from at least a portion of the surface thereof; and an insulating film at least partially surrounding the side surfaces of the first semiconductor layer and the second semiconductor layer and at least the side surface of the active layer, and The at least one light-emitting element includes: a first light-emitting element and a second light-emitting element, the first light-emitting element includes a first protrusion pattern, and the second light-emitting element includes a second protrusion pattern different from the first protrusion pattern.

20. The display device according to claim 19, wherein The protrusion pattern includes: a first protrusion; a second protrusion spaced apart from the first protrusion; and a recess located between the first protrusion and the second protrusion.

21. The display device according to claim 20, wherein The second protrusion surrounds the first protrusion.

22. The display device according to claim 20, wherein The number of protrusions included in the first protrusion pattern is different from the number of protrusions included in the second protrusion pattern.

23. The display device according to claim 20, wherein A width of each protrusion included in the first protrusion pattern is different from a width of each protrusion included in the second protrusion pattern.

24. The display device according to claim 19, wherein A first end of the at least one light emitting element is electrically connected to the first electrode, and a second end of the at least one light emitting element is electrically connected to the second electrode.

25. The display device according to claim 24, wherein The electrode layer of each light emitting element is electrically connected to the first electrode, and the first semiconductor layer is electrically connected to the second electrode.

26. The display device according to claim 24, further comprising: a first contact electrode contacting the first end of the at least one light emitting element and the first electrode; as well as The second contact electrode contacts the second end of the at least one light emitting element and the second electrode.

27. The display device according to claim 26, wherein: The first contact electrode contacts the electrode layer of each light emitting element, and the second contact electrode contacts the first semiconductor layer.

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