High-voltage integrated circuits and semiconductor circuits

Abstract

The present invention relates to a high-voltage integrated circuit and a semiconductor circuit. The high-voltage integrated circuit includes an overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit; the overcurrent protection circuit includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal, the overcurrent protection signal output terminal is connected to the fault logic control circuit, and the fault logic control circuit is used to output a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch, the overcurrent enabling signal input terminal is used to connect to the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. This high-voltage integrated circuit supports the external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, which can effectively reduce the occurrence of frequent shutdowns caused by false output of faults during the power-on stage of the circuit.

Description

Technical Field

[0001] The present invention relates to a high-voltage integrated circuit and a semiconductor circuit, belonging to the technical field of semiconductor circuit applications. Background Art

[0002] A high-voltage integrated circuit, namely HVIC (High Voltage Integrated Circuit), is an integrated circuit product used to convert MCU signals into drive signals for switching tubes such as IGBTs. Generally speaking, HVIC integrates various basic devices such as switching tubes, diodes, zener diodes, resistors, and capacitors to form a drive circuit, a pulse generation circuit, a delay circuit, a filtering circuit, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, a bootstrap circuit, etc. When the HVIC is working, on the one hand, it receives the control signals of an external processor to drive the subsequent switching tubes to work, and on the other hand, it also sends relevant working state detection signals back to the external processor to achieve the control of the circuit working conditions.

[0003] In the related art, an overcurrent protection circuit is integrated inside the high-voltage integrated circuit. In case of various overcurrent situations, the overcurrent protection circuit can output relevant protection signals to the fault logic control circuit, so that the external processor can receive the fault signal and act in time to stop the operation of the circuit, improving the safety and reliability of the circuit. However, in the current overcurrent protection circuit, when the high-voltage integrated circuit is just powered on or in an initial state and has not yet stabilized, the overcurrent detection signal input end of the overcurrent protection circuit is inevitably interfered by the outside world, resulting in the triggering of the output of the fault signal, and it is easy to stop frequently, affecting the operation efficiency of the circuit.

[0004] In summary, the technical problems existing in the related art need to be solved urgently. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to solve a series of problems brought about by the fact that the overcurrent protection circuit in the existing high-voltage integrated circuit is easily interfered by the outside world, resulting in the mis-triggering of the output of the fault signal and easy frequent shutdown.

[0006] Specifically, the present invention discloses a high-voltage integrated circuit, including:

[0007] An overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit;

[0008] The overcurrent protection circuit includes an overcurrent detection signal input end and an overcurrent protection signal output end. The overcurrent protection signal output end is connected to the fault logic control circuit, and the fault logic control circuit is used to output a fault signal to the external processor of the high-voltage integrated circuit;

[0009] The overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch. The overcurrent enabling signal input terminal is used to connect to an external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch.

[0010] Optionally, the high-voltage integrated circuit further includes a driving circuit, an overvoltage protection circuit, and an overtemperature protection circuit.

[0011] Optionally, the driving circuit includes a high-side driving circuit, an interlock circuit, and a low-side driving circuit. The high-side driving circuit is connected to the low-side driving circuit through the interlock circuit.

[0012] Optionally, the overcurrent protection circuit includes an operating current overcurrent protection circuit and a PFC overcurrent protection circuit 212.

[0013] Optionally, the operating current overcurrent protection circuit includes:

[0014] An operating current detection signal input terminal, a first filter, and a first level converter;

[0015] The operating current detection signal input terminal is connected to the input terminal of the first filter. The output terminal of the first filter is connected to the input terminal of the first level converter. The output terminal of the first level converter is the overcurrent protection signal output terminal, and the output terminal of the first level converter is connected to the fault logic control circuit;

[0016] The output terminal of the first filter is grounded through the electronic switch.

[0017] Optionally, the PFC overcurrent protection circuit 212 includes:

[0018] A PFC detection signal input terminal, a second filter, and a second level converter;

[0019] The PFC detection signal input terminal is connected to the input terminal of the second filter. The output terminal of the second filter is connected to the input terminal of the second level converter. The output terminal of the second level converter is the overcurrent protection signal output terminal, and the output terminal of the second level converter is connected to the fault logic control circuit;

[0020] The output terminal of the second filter is grounded through the electronic switch.

[0021] Optionally, the electronic switch includes at least one of a gate turn-off thyristor, a power transistor, a metal oxide semiconductor field effect transistor, and an insulated gate bipolar transistor.

[0022] Optionally, the overcurrent enabling circuit includes a first enabling circuit and a second enabling circuit.

[0023] Optionally, the first enabling circuit includes a first enabling signal input terminal, a third filter, a third level converter, and a first NMOS transistor;

[0024] The first enabling signal input terminal is connected to the input terminal of the third filter, the output terminal of the third filter is connected to the input terminal of the third level converter, the output terminal of the third level converter is connected to the gate of the first NMOS transistor, the drain of the first NMOS transistor is connected to the overcurrent protection circuit, and the source of the first NMOS transistor is grounded.

[0025] The present invention also discloses a semiconductor circuit, including: the high-voltage integrated circuit and the switching transistor in the foregoing embodiments;

[0026] The high-voltage integrated circuit is connected to the switching transistor, and the high-voltage integrated circuit is used to drive the switching transistor.

[0027] The present invention discloses a high-voltage integrated circuit and a semiconductor circuit. Among them, the high-voltage integrated circuit includes an overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit; the overcurrent protection circuit includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal, the overcurrent protection signal output terminal is connected to the fault logic control circuit, and the fault logic control circuit is used to output a fault signal to an external processor of the high-voltage integrated circuit; the overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch, the overcurrent enabling signal input terminal is used to connect to an external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch. This high-voltage integrated circuit supports an external processor to flexibly control the overcurrent protection function through the overcurrent enabling circuit, which can effectively reduce the occurrence of frequent shutdowns caused by false output of faults during the power-on stage of the circuit. Description of the Drawings

[0028] Figure 1 It is a schematic diagram of a high-voltage integrated circuit in the related art;

[0029] Figure 2 It is a simplified circuit schematic diagram of the high-voltage integrated circuit provided by the embodiment of the present invention;

[0030] Figure 3 It is another simplified circuit schematic diagram of the high-voltage integrated circuit provided by the embodiment of the present invention;

[0031] Figure 4 It is a circuit schematic diagram of a specific implementation of the high-voltage integrated circuit provided by the embodiment of the present invention;

[0032] Figure 5 It is a structural schematic diagram of the semiconductor circuit provided by the embodiment of the present invention. Detailed Embodiments

[0033] It should be noted that, without conflict in structure or function, the embodiments in the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to examples.

[0034] A high-voltage integrated circuit, namely HVIC (High Voltage Integrated Circuit), is an integrated circuit product used to convert MCU signals into drive signals for switching devices such as IGBTs. Generally speaking, HVIC integrates various basic devices such as switching transistors, diodes, zener diodes, resistors, and capacitors to form a drive circuit, a pulse generation circuit, a delay circuit, a filtering circuit, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, a bootstrap circuit, etc. When HVIC is working, on the one hand, it receives the control signals from an external processor to drive the subsequent switching transistors to work, and on the other hand, it also sends relevant working state detection signals back to the external processor to achieve the control of the circuit operating conditions.

[0035] High-voltage integrated circuits can generally be applied in semiconductor circuits. The semiconductor circuit mentioned in the present invention is a circuit module that integrates power switching devices and high-voltage integrated circuits, etc., and is hermetically packaged on the outside. It is widely used in the field of power electronics, such as in frequency converters for driving motors, various inverter voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and other fields. There are also many other names for this semiconductor circuit, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or it can also be called a hybrid integrated circuit, a power semiconductor module, a power module, etc.

[0036] Specifically, please refer to Figure 1 , Figure 1 shows a schematic diagram of a high-voltage integrated circuit in the related art. In Figure 1In it, the power supply terminal VCC of the high-voltage integrated circuit can be used as the positive power supply terminal VDD of the low-voltage side of the semiconductor circuit. The voltage at VDD is generally 15V. The high-voltage integrated circuit generally includes six signal input terminals for receiving the upper and lower bridge arm PWM control signals output by the peripheral processor. Among them, the first upper bridge arm signal input terminal HIN1, the second upper bridge arm signal input terminal HIN2, and the third upper bridge arm signal input terminal HIN3 can be used as the U-phase upper bridge arm signal input terminal UHIN, the V-phase upper bridge arm signal input terminal VHIN, and the W-phase upper bridge arm signal input terminal WHIN of the semiconductor circuit respectively; similarly, the first lower bridge arm signal input terminal LIN1, the second lower bridge arm signal input terminal LIN2, and the third lower bridge arm signal input terminal LIN3 of the high-voltage integrated circuit can be used as the U-phase lower bridge arm signal input terminal ULIN, the V-phase lower bridge arm signal input terminal VLIN, and the W-phase lower bridge arm input terminal WLIN of the semiconductor circuit respectively.

[0037] Generally speaking, the voltage range of the input signals of the first upper bridge arm signal input terminal HIN1, the second upper bridge arm signal input terminal HIN2, the third upper bridge arm signal input terminal HIN3, the first lower bridge arm signal input terminal LIN1, the second lower bridge arm signal input terminal LIN2, and the third lower bridge arm signal input terminal LIN3 of the high-voltage integrated circuit can be 0 to 5V; the first positive power supply terminal VB1 of the high-voltage integrated circuit is used as the positive extreme UVB of the U-phase high-voltage side power supply terminal of the semiconductor circuit. The high-voltage side control output terminal HO1 of the high-voltage integrated circuit is used to output the drive signal for driving the U-phase upper bridge arm switch tube. The first negative power supply terminal VS1 of the high-voltage integrated circuit is used as the negative extreme UVS of the U-phase high-voltage side power supply terminal of the semiconductor circuit. The filter capacitor can be connected between the positive extreme UVB and the negative extreme UVS of the U-phase high-voltage side power supply terminal of the semiconductor circuit; the second positive power supply terminal VB2 of the high-voltage integrated circuit is used as the positive extreme VVB of the V-phase high-voltage side power supply terminal of the semiconductor circuit. The high-voltage side control output terminal HO2 of the high-voltage integrated circuit is used to output the drive signal for driving the V-phase upper bridge arm switch tube. The second negative power supply terminal VS2 of the high-voltage integrated circuit is used as the negative extreme VVS of the V-phase high-voltage side power supply terminal of the semiconductor circuit. The filter capacitor can be connected between the positive extreme VVB and the negative extreme VVS of the V-phase high-voltage side power supply terminal of the semiconductor circuit; the third positive power supply terminal VB3 of the high-voltage integrated circuit is used as the positive extreme WVB of the W-phase high-voltage side power supply terminal of the semiconductor circuit. The high-voltage side control output terminal HO3 of the high-voltage integrated circuit is used to output the drive signal for driving the W-phase upper bridge arm switch tube. The third negative power supply terminal VS3 of the high-voltage integrated circuit is used as the negative extreme WVS of the W-phase high-voltage side power supply terminal of the semiconductor circuit. The filter capacitor can be connected between the positive extreme WVB and the negative extreme WVS of the W-phase high-voltage side power supply terminal of the semiconductor circuit.

[0038] In a semiconductor circuit, the function of a high-voltage integrated circuit is to transmit the logic signals of 0 to 5V received by HIN1, HIN2, HIN3, LIN1, LIN2, and LIN3 to HO1, HO2, HO3, LO1, LO2, and LO3 respectively, so as to control the operation of the switching transistor assembly and achieve the driving purpose. Among them, the logic signals output by HO1, HO2, and HO3 are VS to VS + 15V, and LO1, LO2, and LO3 are logic signals of 0 to 15V; the input signals of the same phase cannot be high level at the same time, that is, the input signals of the first upper bridge arm signal input terminal HIN1 and the first lower bridge arm signal input terminal LIN1 cannot be high level at the same time, the input signals of the second upper bridge arm signal input terminal HIN2 and the second lower bridge arm signal input terminal LIN2 cannot be high level at the same time, and the input signals of the third upper bridge arm signal input terminal HIN3 and the third lower bridge arm signal input terminal LIN3 cannot be high level at the same time. Therefore, generally, an interlock circuit can be set between the high-voltage side drive circuit and the low-voltage side drive circuit.

[0039] In order to improve the stability and reliability of the circuit operation, an overcurrent protection circuit, an overheat protection circuit, an undervoltage protection circuit, an overvoltage protection circuit, etc. are generally provided in the high-voltage integrated circuit. These circuits are respectively used to detect various working condition signals of the high-voltage integrated circuit, such as current, temperature or voltage signals, and trigger a protection signal through a trigger when reaching a preset signal threshold. The protection signal is input into the fault logic control circuit. The fault logic control circuit is generally used to output an Enable signal and a FAULT signal. Among them, the Enable signal is used to control the working condition of the switching transistor of the semiconductor circuit, and the FAULT signal is used to be sent back to the external processor to achieve the working condition control of the high-voltage integrated circuit. Specifically, generally speaking, when the Enable signal is a high-level signal, the upper and lower bridge drive signals of the semiconductor circuit are locked regardless of whether they are high or low level; when the FAULT signal is a low-level signal, the external processor detects the FAULT low-level signal and can trigger a fault protection, such as disconnecting the power supply of the high-voltage integrated circuit, to achieve the protection of the high-voltage integrated circuit.

[0040] As mentioned above, an overcurrent protection circuit is generally integrated inside the high-voltage integrated circuit. In case of various overcurrent situations, the overcurrent protection circuit can output relevant protection signals to the fault logic control circuit, so that the external processor can receive the fault signal and act in time to stop the operation of the high-voltage integrated circuit, improving the safety and reliability of the high-voltage integrated circuit. However, in the current overcurrent protection circuit, when the high-voltage integrated circuit is just powered on or in the initial state and has not yet stabilized, the overcurrent detection signal input terminal of the overcurrent protection circuit is inevitably interfered by the outside world, resulting in the output of a triggered fault signal, which is prone to frequent shutdowns and affects the operation efficiency of the high-voltage integrated circuit.

[0041] To this end, an embodiment of the present application provides a high-voltage integrated circuit. Please refer to Figure 2 , the high-voltage integrated circuit 20 mainly includes:

[0042] an overcurrent protection circuit 210, a fault logic control circuit 220, and an overcurrent enable circuit 230;

[0043] Among them, the overcurrent protection circuit 210 includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal. The overcurrent protection signal output terminal is connected to the fault logic control circuit 220, and the fault logic control circuit 220 is configured to output a fault signal to the external processor 10 of the high-voltage integrated circuit 20;

[0044] The overcurrent enable circuit 230 includes an overcurrent enable signal input terminal and an electronic switch. The overcurrent enable signal input terminal is used to connect to the external processor 10 of the high-voltage integrated circuit, and the overcurrent protection circuit 210 is grounded through the electronic switch.

[0045] In the embodiment of the present application, an overcurrent enable circuit 230 is additionally provided in the high-voltage integrated circuit. The function of the overcurrent enable circuit 230 is mainly to provide an interface for the external processor 10 to control the enabling of the overcurrent protection function of the high-voltage integrated circuit. Specifically, the overcurrent enable circuit 230 includes an overcurrent enable signal input terminal and an electronic switch. Among them, the overcurrent enable signal input terminal is used to connect to the external processor 10 of the high-voltage integrated circuit, and can receive a control signal for the electronic switch from the processor 10. This control signal is used to control the conduction or cutoff of the electronic switch. For example, the external processor 10 can input a pulse signal through the overcurrent enable signal input terminal. When the pulse signal is at a high level, the electronic switch conducts; conversely, when the pulse signal is at a low level, the electronic switch cuts off.

[0046] Referring to the previous description of the overcurrent protection function in a conventional high-voltage integrated circuit, it can be known that for a general overcurrent protection circuit 210, when it detects an overcurrent situation, it will output a corresponding protection signal and input it into the fault logic control circuit 220. This protection signal is generally a signal with a changing level. When the fault logic control circuit 220 receives this protection signal, it can output an Enable high-level signal and a FAULT low-level signal, thereby achieving the shutdown of the drive signal and the power-off of the high-voltage integrated circuit. In the embodiment of the present application, after the overcurrent enable circuit 230 is set, since the overcurrent protection circuit 210 is grounded through the electronic switch in the overcurrent enable circuit 230, when the electronic switch is turned on, the overcurrent protection circuit 210 is also grounded. At this time, when an overcurrent is detected, the protection signal cannot be normally transmitted to the fault logic control circuit 220, and the overcurrent protection function fails. On the contrary, when the electronic switch is turned off, the grounding of the overcurrent protection circuit 210 fails. At this time, when an overcurrent is detected, the protection signal can be normally transmitted to the fault logic control circuit 220, and the overcurrent protection function is effective.

[0047] Therefore, it can be understood that the high-voltage integrated circuit provided in the embodiment of the present application supports enabling or disabling the overcurrent protection function of the high-voltage integrated circuit through an external processor 10. In actual application, the level type and duration of the pulse signal specifically output by the external processor 10 to the overcurrent enable signal input terminal of the overcurrent enable circuit 230 can be flexibly adjusted according to needs. For example, in some embodiments, it can be set that when the high-voltage integrated circuit is initially powered on, a high-level signal is input to the overcurrent enable signal input terminal of the overcurrent enable circuit 230 through the external processor 10, so that the overcurrent protection function of the high-voltage integrated circuit is temporarily invalid, reducing the situation that the high-voltage integrated circuit is easily interfered by the outside world when it is just powered on or in the initial state and not yet running stably, resulting in frequent shutdowns due to the triggering of overcurrent protection, and improving the operating efficiency of the high-voltage integrated circuit. After a predetermined duration after the high-voltage integrated circuit is powered on, the external processor 10 can stop inputting a high-level signal to the overcurrent enable signal input terminal of the overcurrent enable circuit 230. At this time, the overcurrent enable signal input terminal is at a low level, the electronic switch is turned off, and the overcurrent protection function of the high-voltage integrated circuit is effective, which can improve the safety and stability of the circuit operation.

[0048] In some embodiments, the high-voltage integrated circuit of the present application further includes a drive circuit, an overvoltage protection circuit, and an overtemperature protection circuit. Specifically, the drive circuit may include a high-voltage side drive circuit, an interlock circuit, and a low-voltage side drive circuit. The high-voltage side drive circuit is connected to the low-voltage side drive circuit through the interlock circuit. These above circuits can be implemented with reference to the existing design and will not be elaborated here.

[0049] In some embodiments, the electronic switch in the high-voltage integrated circuit of the present application may employ common power electronic devices, including but not limited to gate turn-off thyristor (GTO), power transistor (GTR), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), etc.

[0050] In some embodiments, referring to Figure 3 , the overcurrent protection circuit 210 of the present application may include various types. For example, it includes an operating current overcurrent protection circuit 211 and a PFC overcurrent protection circuit 212. At this time, the overcurrent enabling circuit 230 may also be provided with multiple corresponding units, corresponding to each overcurrent protection circuit. For example, a first enabling circuit and a second enabling circuit are provided in the overcurrent enabling circuit 230. The first enabling circuit corresponds to the operating current overcurrent protection circuit 211, and the second enabling circuit corresponds to the PFC overcurrent protection circuit 212. In this way, the first enabling circuit and the operating current overcurrent protection circuit 211 can independently and flexibly enable the operating current overcurrent protection function. Similarly, the second enabling circuit and the PFC overcurrent protection circuit 212 can also independently and flexibly enable the PFC overcurrent protection function.

[0051] Referring to Figure 3 , Figure 3 In, the operating current overcurrent protection circuit 211 can receive an overcurrent detection signal through the ITRIP port and output a protection signal when overcurrent is confirmed; the overcurrent enabling circuit 230 can receive an enabling signal from the processor 10 through the first enabling signal input terminal EN1, and can control the operating current overcurrent protection circuit 211 through this enabling signal; the PFC overcurrent protection circuit 212 can receive an overcurrent detection signal through the PFCTRIP port and output a protection signal when overcurrent is confirmed; the overcurrent enabling circuit 230 can receive an enabling signal from the processor 10 through the second enabling signal input terminal EN2, and can control the PFC overcurrent protection circuit 212 through this enabling signal.

[0052] More specifically, please refer to Figure 4 , Figure 4 shows a circuit schematic diagram when a multi-path overcurrent protection circuit 210 and a multi-path overcurrent enabling circuit 230 provided in the present application are used in combination. In Figure 4 , the overcurrent protection circuit 210 includes an operating current overcurrent protection circuit 211 and a PFC overcurrent protection circuit 212, and the overcurrent enabling circuit 230 includes a first enabling circuit and a second enabling circuit; among them, the operating current overcurrent protection circuit 211 and the first enabling circuit are used in combination, and the PFC overcurrent protection circuit 212 and the second enabling circuit are used in combination.

[0053] In the operating current overcurrent protection circuit 211, there are an operating current detection signal input terminal, a first filter 2111, and a first level converter 2112; the operating current detection signal input terminal is connected to the input terminal of the first filter 2111 via a trigger. The trigger is used to determine whether there is a corresponding overcurrent and is a conventional device of the overcurrent protection circuit 210, so it will not be described additionally here. The first filter 2111 is used to filter the signal output by the trigger and output a high-level signal. The first level converter 2112 then converts this high-level signal and outputs a low-level signal, thereby triggering the fault logic control circuit 220 to output a FAULT low-level signal for power-off protection. The output terminal of the first filter 2111 is grounded through the electronic switch of the first enabling circuit. When the electronic switch of the first enabling circuit is turned on, if the operating current overcurrent protection circuit 211 performs a protection action, the high-level signal output by the first filter 2111 will be grounded, that is, the input terminal of the first level converter 2112 is always grounded. At this time, the first level converter 2112 will output a high-level signal, and the fault logic control circuit 220 will not act, and the operating current overcurrent protection circuit 211 fails. When the electronic switch of the first enabling circuit is turned off, if the operating current overcurrent protection circuit 211 performs a protection action, the high-level signal output by the first filter 2111 will be input to the input terminal of the first level converter 2112. At this time, the first level converter 2112 will output a low-level signal, the fault logic control circuit 220 will act, and the operating current overcurrent protection circuit 211 is effective.

[0054] In some embodiments, the first enabling circuit of the present application includes a first enabling signal input terminal, a third filter 2311, a third level converter 2312, and a first NMOS transistor Q1;

[0055] The first enabling signal input terminal is connected to the input terminal of the third filter 2311, the output terminal of the third filter 2311 is connected to the input terminal of the third level converter 2312, the output terminal of the third level converter 2312 is connected to the gate of the first NMOS transistor Q1, the drain of the first NMOS transistor Q1 is connected to the overcurrent protection circuit 210, and the source of the first NMOS transistor Q1 is grounded.

[0056] In the embodiment of the present application, when the external processor 10 inputs a high-level signal from the first enable signal input terminal EN1, the third filter 2311 outputs a high-level signal after filtering, the third level converter 2312 outputs a low-level signal, the first NMOS transistor Q1 has no action, and it has no influence on the PFC overcurrent protection circuit 212 connected to its drain. When the external processor 10 inputs a low-level signal from the first enable signal input terminal EN1, the third filter 2311 outputs a low-level signal after filtering, the third level converter 2312 outputs a high-level signal, the first NMOS transistor Q1 is turned on. At this time, in the PFC overcurrent protection circuit 212 connected to the drain of the first NMOS transistor Q1, the input terminal of the second level converter 2122 will be pulled down to a low level, making the high-level signal detected by PFCTRIP invalid, and the circuit does not perform the overcurrent protection action.

[0057] Referring to Figure 4 , in the PFC overcurrent protection circuit 212 of the present application, it includes a PFC detection signal input terminal, a second filter 2121, and a second level converter 2122; similarly, the PFC detection signal input terminal is connected to the input terminal of the second filter 2121 via a trigger. The second filter 2121 is used to filter the signal output by the trigger and output a high-level signal, and the second level converter 2122 converts the high-level signal and outputs a low-level signal, thereby triggering the fault logic control circuit 220 to output a FAULT low-level signal for power-off protection. The output terminal of the second filter 2121 is grounded through the electronic switch of the second enable circuit. When the electronic switch of the second enable circuit is turned on, if the PFC overcurrent protection circuit 212 performs a protection action, the high-level signal output by the second filter 2121 will be grounded, that is, the input terminal of the second level converter 2122 is always grounded. At this time, the second level converter 2122 will output a high-level signal, and the fault logic control circuit 220 does not act, and the action current overcurrent protection circuit 211 fails. When the electronic switch of the second enable circuit is turned off, if the PFC overcurrent protection circuit 212 performs a protection action, the high-level signal output by the second filter 2121 will be input to the input terminal of the second level converter 2122. At this time, the second level converter 2122 will output a low-level signal, the fault logic control circuit 220 acts, and the PFC overcurrent protection circuit 212 is effective.

[0058] In some embodiments, the second enable circuit of the present application includes a second enable signal input terminal, a fourth filter 2321, a fourth level converter 2322, and a second NMOS transistor Q2;

[0059] The second enable signal input terminal is connected to the input terminal of the fourth filter 2321. The output terminal of the fourth filter 2321 is connected to the input terminal of the fourth level converter 2322. The output terminal of the fourth level converter 2322 is connected to the gate of the second NMOS transistor Q2. The drain of the second NMOS transistor Q2 is connected to the overcurrent protection circuit 210, and the source of the second NMOS transistor Q2 is grounded.

[0060] In the embodiment of the present application, when the external processor 10 inputs a high-level signal from the second enable signal input terminal EN2, the fourth filter 2321 outputs a high-level signal after filtering. The fourth level converter 2322 outputs a low-level signal, and the second NMOS transistor Q2 does not act, having no influence on the action current overcurrent protection circuit 211 connected to its drain. When the external processor 10 inputs a low-level signal from the second enable signal input terminal EN1, the fourth filter 2321 outputs a low-level signal after filtering. The fourth level converter 2322 outputs a high-level signal, and the second NMOS transistor Q2 is turned on. At this time, in the action overcurrent protection circuit 211 connected to the drain of the second NMOS transistor Q2, the input terminal of the first level converter 2112 will be pulled down to a low level, making the high-level detected by ITRIP invalid, and the circuit does not perform the overcurrent protection action.

[0061] It can be understood that the specific model of the above-mentioned switching transistor, the specific structure and quantity of the enable circuit in the embodiment of the present application can all be flexibly selected according to needs, and the present application does not make any limitations in this regard.

[0062] In the embodiment of the present application, with reference to Figure 5 , a semiconductor circuit is further provided. The semiconductor circuit includes the high-voltage integrated circuit 20 and the switching transistor 30 in the foregoing embodiment;

[0063] The high-voltage integrated circuit 20 is connected to the switching transistor 30, and the high-voltage integrated circuit 20 is used to drive the switching transistor 30.

[0064] It can be understood that the content in the above-mentioned high-voltage integrated circuit embodiment is applicable to the semiconductor circuit embodiment of the present application. The functions specifically implemented by the semiconductor circuit embodiment of the present application are the same as those of the above-mentioned high-voltage integrated circuit embodiment, and the beneficial effects achieved are also the same as those of the above-mentioned high-voltage integrated circuit embodiment.

[0065] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0066] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. are based on the orientation or positional relationships shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present invention.

[0067] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0068] In the present invention, unless otherwise clearly specified and limited, terms such as "mounted", "connected", "connected to", "fixed", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0069] In the present invention, unless otherwise clearly defined and limited, a first feature being "on" or "under" a second feature may mean that the first and second features are in direct contact, or the first and second features are indirectly in contact via an intermediate medium. Further, a first feature being "above", "over" and "on top of" a second feature may mean that the first feature is directly above or obliquely above the second feature, or merely means that the horizontal height of the first feature is higher than that of the second feature. A first feature being "under", "below" and "beneath" a second feature may mean that the first feature is directly below or obliquely below the second feature, or merely means that the horizontal height of the first feature is less than that of the second feature.

[0070] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those of ordinary skill in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A high-voltage integrated circuit, characterized in that, The high-voltage integrated circuit includes: an overcurrent protection circuit, a fault logic control circuit, and an overcurrent enabling circuit; The overcurrent protection circuit includes an overcurrent detection signal input terminal and an overcurrent protection signal output terminal. The overcurrent protection signal output terminal is connected to the fault logic control circuit, and the fault logic control circuit is configured to output a fault signal to an external processor of the high-voltage integrated circuit. The overcurrent enabling circuit includes an overcurrent enabling signal input terminal and an electronic switch. The overcurrent enabling signal input terminal is used to connect to the external processor of the high-voltage integrated circuit, and the overcurrent protection circuit is grounded through the electronic switch; The overcurrent protection circuit includes an operating current overcurrent protection circuit and a PFC overcurrent protection circuit; the operating current overcurrent protection circuit includes: an operating current detection signal input terminal, a first filter, and a first level converter; The PFC overcurrent protection circuit includes: a PFC detection signal input terminal, a second filter, and a second level converter; the PFC detection signal input terminal is connected to the input terminal of the second filter, the output terminal of the second filter is connected to the input terminal of the second level converter, the output terminal of the second level converter is the overcurrent protection signal output terminal, and the output terminal of the second level converter is connected to the fault logic control circuit; the output terminal of the second filter is grounded through the electronic switch; The overcurrent enabling circuit includes a first enabling circuit and a second enabling circuit. The first enabling circuit includes a first enabling signal input terminal, a third filter, a third level converter, and a first NMOS transistor; the first enabling signal input terminal is connected to the input terminal of the third filter, the output terminal of the third filter is connected to the input terminal of the third level converter, the output terminal of the third level converter is connected to the gate of the first NMOS transistor, the drain of the first NMOS transistor is connected to the overcurrent protection circuit, and the source of the first NMOS transistor is grounded; The second enabling circuit includes a second enabling signal input terminal, a fourth filter, a fourth level converter, and a second NMOS transistor; when the external processor inputs a high-level signal from the second enabling signal input terminal, the fourth filter filters and outputs a high-level signal, the fourth level converter outputs a low-level signal, and the second NMOS transistor has no action, having no influence on the operating current overcurrent protection circuit connected to its drain; when the external processor inputs a low-level signal from the second enabling signal input terminal, the fourth filter filters and outputs a low-level signal, the fourth level converter outputs a high-level signal, and the second NMOS transistor conducts, and at this time the circuit does not perform an overcurrent protection action.

2. The high-voltage integrated circuit according to claim 1, wherein The electronic switch includes at least one of a gate turn-off thyristor, a power transistor, a metal-oxide-semiconductor field-effect transistor, and an insulated-gate bipolar transistor.

3. A semiconductor circuit, characterized in that, including the high-voltage integrated circuit according to any one of claims 1-2 and a switching transistor; The high-voltage integrated circuit is connected to the switching transistor, and the high-voltage integrated circuit is used to drive the switching transistor.

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