Optical chips, optical modules and communication equipment

Abstract

The present application provides an optical chip, an optical module, and a communication device suitable for use in switches or signal transceivers, particularly switches or signal transceivers in data centers or data center clusters. The optical chip includes an optical modulator and an electronic device, wherein the electronic device includes at least one of a capacitor, a resistor, or an inductor, and the electronic device is used to process a radio frequency signal; the optical modulator is used to perform optical modulation processing based on the radio frequency signal to generate an optical signal, and the optical modulator includes a P-type doped region and an N-type doped region, wherein the combined portion of the P-type doped region and the N-type doped region forms a PN junction. By integrating electronic devices such as capacitors, inductors, or resistors in the optical chip, space for configuring the above-mentioned electronic devices on a substrate in the optical module used to configure the optical chip can be saved, which is conducive to the miniaturization of the optical module and reduces the design complexity of the optical module.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of communications, and more specifically, to an optical chip, an optical module, and a communication device. Background Art

[0002] At present, an optical module (or optoelectronic conversion module or optical transceiver, etc.) is known, in which an electrical chip and an optical chip are arranged on a substrate. The electrical chip, for example, a serializer / deserializer (SerDes) is used to generate or process radio frequency signals in the electrical domain, and the optical chip is used to generate or process optical signals.

[0003] Furthermore, in practical applications, it is usually necessary to perform processing such as sending DC bias, equalization, or differential processing on the radio frequency signal input to the optical chip, and such processing is implemented by electronic devices configured on the substrate.

[0004] Therefore, on the one hand, space needs to be reserved on the substrate for configuring the above-mentioned electronic devices. On the other hand, the radio frequency signal processed by the electronic devices is input into the optical chip via the transmission line configured on the substrate, which is not conducive to the miniaturization of the optical module and increases the design complexity of the optical module. Summary of the Invention

[0005] The present application provides an optical chip, an optical module, and a communication device, which can achieve miniaturization of the optical module and reduce the design complexity of the optical module.

[0006] In a first aspect, an optical chip is provided, comprising at least one optical modulator and at least one electronic device, wherein the electronic device includes at least one of a capacitor, a resistor, or an inductor, and the electronic device is used to perform signal processing on a radio frequency signal; the optical modulator is used to perform optical modulation processing based on the radio frequency signal after the signal processing to generate an optical signal, and the optical modulator includes a P-type doped region and an N-type doped region, and a junction of the P-type doped region and the N-type doped region forms a PN junction.

[0007] According to the solution of the present application, by integrating electronic devices such as capacitors, inductors or resistors in the optical chip, the space used to configure the above-mentioned electronic devices on the substrate used to configure the optical chip in the optical module can be reduced, which can be conducive to the miniaturization of the optical module and reduce the design complexity of the optical module.

[0008] In this application, the electronic device includes a biaser, for example, a T-type biaser (Bias-T). In this case, the configuration of the optical chip is as follows:

[0009] The electronic device includes a bias device, and the optical chip also includes a first metal component and a second metal component. The first metal component is used to connect the bias device and a first optical modulator of the at least one optical modulator, and the second metal component is connected to the bias device. A first radio frequency signal is input to the bias device via the second metal component. The P-type doped region of the first optical modulator is grounded, and the N-type doped region of the first optical modulator is connected to the first metal component. The bias device includes a first capacitor and a first inductor. The first capacitor includes a P-type doped optical waveguide and an N-type doped optical waveguide. The combined portion of the P-type doped optical waveguide and the N-type doped optical waveguide forms a PN junction, wherein the P-type doped optical waveguide is connected to the first metal component, and the N-type doped optical waveguide is connected to the second metal component. A first end of the first inductor is used to receive a DC bias voltage, and a second end of the inductor is connected to the first metal component.

[0010] By configuring and connecting the capacitors and inductors as described above, it is possible to integrate a bias device into an optical chip.

[0011] In one implementation, the optical chip is formed with a semiconductor layer and a metal layer.

[0012] The capacitor and the first optical modulator are configured in the semiconductor layer.

[0013] The first metal component and the second metal component are arranged on the metal layer.

[0014] In a possible implementation, the N-type doped optical waveguide includes a first N-type doped optical waveguide and at least two second N-type doped optical waveguides, there is at least one P-type doped optical waveguide, and each P-type doped optical waveguide includes a first P-type doped optical waveguide and a second P-type doped optical waveguide in a stacked configuration, wherein the first P-type doped optical waveguide is located on the first N-type doped optical waveguide, and a junction of the first N-type doped optical waveguide and the first P-type doped optical waveguide forms a PN junction, the second P-type doped optical waveguide is located on the first P-type doped optical waveguide, and a P-type doping concentration of the second P-type doped optical waveguide is greater than a P-type doping concentration of the first P-type doped optical waveguide, the second N-type doped optical waveguide is located on the first N-type doped optical waveguide, and an N-type doping concentration of the second N-type doped optical waveguide is greater than a N-type doping concentration of the first N-type doped optical waveguide, and the first metal component is connected to each of the second P-type doped optical waveguides, and the second metal component is connected to each of the at least two second N-type doped optical waveguides.

[0015] Optionally, at least one first groove is formed on the first N-type doped optical waveguide, and the at least one first P-type doped optical waveguide is respectively arranged in the at least one first groove, so that a PN junction can be formed by the combined part of the first P-type doped optical waveguide and the bottom surface and side wall of the groove, thereby improving the efficiency of the capacitor.

[0016] According to the above solution, the PN junction of the capacitor can be formed on a horizontal plane (eg, the configuration direction of the first N-type doped optical waveguide and the metal layer), which can increase the area of ​​the PN junction and improve the flexibility of capacitor configuration.

[0017] As an example and not a limitation, each first P-type doped optical waveguide is located between two second N-type doped optical waveguides.

[0018] In a possible implementation manner, there are at least two first P-type doped optical waveguides.

[0019] Furthermore, in the present application, the first P-type doped optical waveguide and the second N-type doped optical waveguide can be arranged at intervals in the horizontal direction (or, staggered), that is, each first P-type doped optical waveguide is adjacent to two second N-type doped optical waveguides (that is, each first P-type doped optical waveguide is located between two second N-type doped optical waveguides), and the multiple optical waveguides are arranged in the horizontal direction, the second N-type doped optical waveguides located at both ends are adjacent to one first P-type doped optical waveguide, and the other second N-type doped optical waveguides are adjacent to two first P-type doped optical waveguides (that is, the other second N-type doped optical waveguides are located between the two first P-type doped optical waveguides).

[0020] In one implementation, the second metal component includes at least two first substructures, each corresponding to the at least two P-type doped optical waveguides. The first end of each first substructure is connected to the corresponding P-type doped optical waveguide. This saves space for configuring the second metal component.

[0021] Similarly, the first metal component includes at least two second substructures, each corresponding to the at least two second N-type doped optical waveguides. The fourth end of each second substructure is connected to the corresponding second N-type doped optical waveguide. This saves space for configuring the first metal component.

[0022] The at least two first substructures share one aluminum electrode, and the at least two second substructures share one aluminum electrode.

[0023] In one possible implementation, the N-type doped optical waveguide includes a third N-type doped optical waveguide and a fourth N-type doped optical waveguide, and the P-type doped optical waveguide includes a third P-type doped optical waveguide and a fourth P-type doped optical waveguide, wherein a first side of the fourth P-type doped optical waveguide is connected to the third P-type doped optical waveguide, a second side of the fourth P-type doped optical waveguide is connected to the first side of the third N-type doped optical waveguide, a P-type doping concentration of the third P-type doped optical waveguide is greater than a P-type doping concentration of the fourth P-type doped optical waveguide, a junction of the fourth P-type doped optical waveguide and the third N-type doped optical waveguide forms a PN junction, the second side of the third N-type doped optical waveguide is connected to the fourth N-type doped optical waveguide, and an N-type doping concentration of the fourth N-type doped optical waveguide is greater than a N-type doping concentration of the third N-type doped optical waveguide, and the first metal component is connected to the third P-type doped optical waveguide, and the second metal component is connected to the fourth N-type doped optical waveguide.

[0024] According to the above scheme, the PN junction of the capacitor body can be formed on a vertical plane (for example, perpendicular to the configuration plane of the first N-type doped optical waveguide and the metal layer), so that the capacitor of the present application can be formed using existing PN junction formation technology.

[0025] In one implementation, the electronic device further includes a first transmit equalizer, the first transmit equalizer includes a second inductor, and a first end of the second inductor is used to receive the first radio frequency signal, and a second end of the second inductor is connected to the second metal component.

[0026] In this application, the electronic device includes an equalizer, specifically a transmit equalizer. In this case, the configuration of the optical chip is as follows:

[0027] The electronic device includes a second transmit equalizer, which includes a third inductor. A first end of the third inductor is used to receive a second radio frequency signal, a second end of the third inductor is connected to an N-type doped region of a second optical modulator of the at least one optical modulator, and a P-type doped region of the second optical modulator is grounded.

[0028] In this application, the electronic device includes a differentiator. In this case, the configuration of the optical chip is as follows:

[0029] The optical chip also includes a third metal component and a fourth metal component, wherein a P-type doped region of a third optical modulator in the at least one optical modulator is connected to the third metal component, a first differential RF signal is input to the third optical modulator via the third metal component, an N-type doped region of the third optical modulator is connected to the fourth metal component, and a second differential RF signal is input to the third optical modulator via the fourth metal component. The electronic device includes a transmitting differentiator, which includes a first resistor and a second resistor, wherein a first end of the first resistor is grounded, and a second end of the first resistor is connected to the third metal component; a first end of the second resistor is used to receive a DC bias voltage, and a second end of the second resistor is connected to the fourth metal component.

[0030] In one possible implementation, the electronic device further includes a third transmit equalizer and a fourth transmit equalizer, the third transmit equalizer includes a fourth inductor, the fourth transmit equalizer includes a fifth inductor, and the first end of the fourth inductor is used to receive the first differential RF signal, the second end of the fourth inductor is connected to the third metal component, the first end of the fifth inductor is used to receive the second differential RF signal, and the second end of the fifth inductor is connected to the fourth metal component.

[0031] In a second aspect, an optical chip is provided, specifically an optical chip with an integrated bias device, comprising an optical modulator, a metal component, and a bias device, wherein the optical modulator is used to perform optical modulation processing according to the radio frequency signal after the signal processing to generate an optical signal, the optical modulator comprises a P-type doped region and an N-type doped region, the combined portion of the P-type doped region and the N-type doped region forms a PN junction, the metal component comprises a first metal component and a second metal component, the first metal component is used to connect the bias device and the optical modulator, the second metal component is connected to the bias device, and the radio frequency signal is transmitted via the second metal component. The optical modulator is input to the bias device, the P-type doped region of the optical modulator is grounded, and the N-type doped region of the optical modulator is connected to the first metal component. The bias device includes a first capacitor and a first inductor. The first capacitor includes a P-type doped optical waveguide and an N-type doped optical waveguide. The combined portion of the P-type doped optical waveguide and the N-type doped optical waveguide forms a PN junction. The P-type doped optical waveguide is connected to the first metal component, and the N-type doped optical waveguide is connected to the second metal component. The first end of the first inductor is used to receive a DC bias voltage, and the second end of the inductor is connected to the first metal component.

[0032] In a possible implementation, the N-type doped optical waveguide includes a first N-type doped optical waveguide and at least two second N-type doped optical waveguides, there is at least one P-type doped optical waveguide, and each P-type doped optical waveguide includes a first P-type doped optical waveguide and a second P-type doped optical waveguide in a stacked configuration, wherein the first P-type doped optical waveguide is located on the first N-type doped optical waveguide, and a junction of the first N-type doped optical waveguide and the first P-type doped optical waveguide forms a PN junction, the second P-type doped optical waveguide is located on the first P-type doped optical waveguide, and a P-type doping concentration of the second P-type doped optical waveguide is greater than a P-type doping concentration of the first P-type doped optical waveguide, the second N-type doped optical waveguide is located on the first N-type doped optical waveguide, and an N-type doping concentration of the second N-type doped optical waveguide is greater than a N-type doping concentration of the first N-type doped optical waveguide, and the first metal component is connected to each of the second P-type doped optical waveguides, and the second metal component is connected to each of the at least two second N-type doped optical waveguides.

[0033] For example, the P-type doped optical waveguide is located between two second N-type doped optical waveguides.

[0034] For another example, there are at least two P-type doped optical waveguides.

[0035] In another possible implementation, the N-type doped optical waveguide includes a third N-type doped optical waveguide and a fourth N-type doped optical waveguide, and the P-type doped optical waveguide includes a third P-type doped optical waveguide and a fourth P-type doped optical waveguide, wherein a first side of the fourth P-type doped optical waveguide is connected to the third P-type doped optical waveguide, a second side of the fourth P-type doped optical waveguide is connected to the first side of the third N-type doped optical waveguide, and a P-type doping concentration of the third P-type doped optical waveguide is greater than a P-type doping concentration of the fourth P-type doped optical waveguide, a junction of the fourth P-type doped optical waveguide and the third N-type doped optical waveguide forms a PN junction, the second side of the third N-type doped optical waveguide is connected to the fourth N-type doped optical waveguide, and an N-type doping concentration of the fourth N-type doped optical waveguide is greater than a N-type doping concentration of the third N-type doped optical waveguide, and the first metal component is connected to the third P-type doped optical waveguide, and the second metal component is connected to the fourth N-type doped optical waveguide.

[0036] Optionally, the optical chip further includes a first transmitting equalizer, the first transmitting equalizer includes a second inductor, and a first end of the second inductor is used to receive a first radio frequency signal, and a second end of the second inductor is connected to the second metal component.

[0037] The optical chip includes a semiconductor layer and a metal layer, the optical modulator and the capacitor are configured in the semiconductor layer, and the first metal component, the second metal component, the first inductor and the second inductor are configured in the metal layer.

[0038] According to a third aspect, an optical chip is provided, specifically, an optical chip with an integrated transmit equalizer, comprising an optical modulator and a transmit equalizer, wherein the transmit equalizer comprises an inductor, wherein a first end of the inductor is used to receive a radio frequency signal, a second end of the inductor is connected to an N-type doped region of the optical modulator, and a P-type doped region of the optical modulator is grounded. The optical modulator is used to perform optical modulation processing according to the radio frequency signal to generate an optical signal, and the optical modulator comprises a P-type doped region and an N-type doped region, wherein a junction of the P-type doped region and the N-type doped region forms a PN junction.

[0039] In a fourth aspect, an optical chip is provided, specifically an optical chip with an integrated differentiator, comprising an optical modulator, multiple metal components, and a transmitting differentiator, wherein the optical modulator comprises a P-type doped region and an N-type doped region, the junction of the P-type doped region and the N-type doped region forming a PN junction, the P-type doped region of the optical modulator is connected to a first metal component, a first differential RF signal is input to the optical modulator via the first metal component, the N-type doped region of the optical modulator is connected to a second metal component, a second differential RF signal is input to the optical modulator via the second metal component, the transmitting differentiator comprises a first resistor and a second resistor, the first end of the first resistor is grounded, and the second end of the first resistor is connected to the first metal component; the first end of the second resistor is used to receive a DC bias voltage, and the second end of the second resistor is connected to the second metal component.

[0040] In one implementation, the electronic device further includes a first transmit equalizer and a second transmit equalizer, the first transmit equalizer includes a first inductor, the second transmit equalizer includes a second inductor, and the first end of the first inductor is used to receive the first differential RF signal, the second end of the first inductor is connected to the first metal component, the first end of the second inductor is used to receive the second differential RF signal, and the second end of the second inductor is connected to the second metal component.

[0041] In a fifth aspect, an optical chip is provided, specifically an optical chip for receiving an equalizer, comprising: a photodiode, a first capacitor, a second capacitor, and a first resistor, wherein the photodiode is used to convert an optical signal into a radio frequency signal, the photodiode includes a P-type doped region and an N-type doped region, the junction of the P-type doped region and the N-type doped region forming a PN junction, the N-type doped region of the photodiode is connected to a first metal component, and a bias voltage is input to the P-type doped region of the photodiode; the first capacitor and the second capacitor include a P-type doped optical waveguide and an N-type doped optical waveguide, the junction of the P-type doped optical waveguide and the N-type doped optical waveguide forming a PN junction; the N-type doped optical waveguide of the first capacitor is connected to the first metal component, and the N-type doped optical waveguide of the second capacitor is connected to the first end of the first resistor; the P-type doped optical waveguide of the first capacitor and the P-type doped optical waveguide of the second capacitor are connected to the second metal component, the second metal component is used to output the equalized radio frequency signal, and the second end of the resistor is connected to the configuration.

[0042] By way of example and not limitation, the first resistor comprises titanium nitride (TiN).

[0043] In a possible implementation, the N-type doped optical waveguide includes a first N-type doped optical waveguide and at least two second N-type doped optical waveguides, and there is at least one P-type doped optical waveguide, each P-type doped optical waveguide including a first P-type doped optical waveguide and a second P-type doped optical waveguide in a stacked configuration, wherein the first P-type doped optical waveguide is located on the first N-type doped optical waveguide, and a junction of the first N-type doped optical waveguide and the first P-type doped optical waveguide forms a PN junction, the second P-type doped optical waveguide is located on the first P-type doped optical waveguide, and a P-type doping concentration of the second P-type doped optical waveguide is greater than a P-type doping concentration of the first P-type doped optical waveguide, and the second N-type doped optical waveguide is located on the first N-type doped optical waveguide, and an N-type doping concentration of the second N-type doped optical waveguide is greater than a N-type doping concentration of the first N-type doped optical waveguide.

[0044] Optionally, at least one first groove is formed on the first N-type doped optical waveguide, and the at least one first P-type doped optical waveguide is respectively arranged in the at least one first groove, so that a PN junction can be formed by the combined part of the first P-type doped optical waveguide and the bottom surface and side wall of the groove, thereby improving the efficiency of the capacitor.

[0045] As an example and not a limitation, each first P-type doped optical waveguide is located between two second N-type doped optical waveguides.

[0046] In a possible implementation manner, there are at least two first P-type doped optical waveguides.

[0047] Furthermore, in the present application, the first P-type doped optical waveguide and the second N-type doped optical waveguide can be arranged at intervals in the horizontal direction (or, staggered), that is, each first P-type doped optical waveguide is adjacent to two second N-type doped optical waveguides (that is, each first P-type doped optical waveguide is located between two second N-type doped optical waveguides), and the multiple optical waveguides are arranged in the horizontal direction, the second N-type doped optical waveguides located at both ends are adjacent to one first P-type doped optical waveguide, and the other second N-type doped optical waveguides are adjacent to two first P-type doped optical waveguides (that is, the other second N-type doped optical waveguides are located between the two first P-type doped optical waveguides).

[0048] In one possible implementation, the N-type doped optical waveguide includes a third N-type doped optical waveguide and a fourth N-type doped optical waveguide, and the P-type doped optical waveguide includes a third P-type doped optical waveguide and a fourth P-type doped optical waveguide, wherein a first side of the fourth P-type doped optical waveguide is connected to the third P-type doped optical waveguide, a second side of the fourth P-type doped optical waveguide is connected to the first side of the third N-type doped optical waveguide, and a P-type doping concentration of the third P-type doped optical waveguide is greater than a P-type doping concentration of the fourth P-type doped optical waveguide, a junction of the fourth P-type doped optical waveguide and the third N-type doped optical waveguide forms a PN junction, a second side of the third N-type doped optical waveguide is connected to the fourth N-type doped optical waveguide, and an N-type doping concentration of the fourth N-type doped optical waveguide is greater than a N-type doping concentration of the third N-type doped optical waveguide.

[0049] In a sixth aspect, an optical module is provided, comprising: a substrate; an electrical chip for generating radio frequency signals or processing radio frequency signals, configured on the substrate; an optical chip in any one of the first to fifth aspects and any possible implementation thereof, configured on the substrate; and a signal line arranged on the substrate for transmitting radio frequency signals between the service chip and the optical chip.

[0050] In a seventh aspect, a communication device is provided, comprising: a receiver comprising the optical module in the sixth aspect; and / or a transmitter comprising the optical module in the sixth aspect.

[0051] In an eighth aspect, a communication device is provided, comprising: a transceiver for receiving or sending a signal, the transceiver comprising the optical module in the sixth aspect, the optical module being used to modulate or demodulate the signal; and a processor for performing signal processing on the signal.

[0052] As an example and not a limitation, the communication device includes a switch, or an optical switch.

[0053] In a ninth aspect, a capacitor is provided, comprising a P-type doped optical waveguide and an N-type doped optical waveguide, wherein a junction of the P-type doped optical waveguide and the N-type doped optical waveguide forms a PN junction, the N-type doped optical waveguide comprises a first N-type doped optical waveguide and at least two second N-type doped optical waveguides, there is at least one P-type doped optical waveguide, and each P-type doped optical waveguide comprises a first P-type doped optical waveguide and a second P-type doped optical waveguide in a stacked configuration, wherein the first P-type doped optical waveguide is located on the first N-type doped optical waveguide, and a junction of the first N-type doped optical waveguide and the first P-type doped optical waveguide forms a PN junction, the second P-type doped optical waveguide is located on the first P-type doped optical waveguide, and a P-type doping concentration of the second P-type doped optical waveguide is greater than a P-type doping concentration of the first P-type doped optical waveguide, and the second N-type doped optical waveguide is located on the first N-type doped optical waveguide, and an N-type doping concentration of the second N-type doped optical waveguide is greater than an N-type doping concentration of the first N-type doped optical waveguide.

[0054] In one implementation, the P-type doped optical waveguide is located between two second N-type doped optical waveguides.

[0055] In another implementation, there are at least two P-type doped optical waveguides. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 It is a schematic structural diagram of the optical chip of this application.

[0057] Figure 2 Schematic diagram of the structure of the optical modulator of the present application.

[0058] Figure 3 is a schematic diagram of the structure of the photodiode of the present application.

[0059] Figure 4 This is a schematic diagram of an example of a capacitor of the present application.

[0060] Figure 5 is a schematic diagram of another example of a capacitor of the present application.

[0061] Figure 6 This is a schematic diagram of an example of the configuration of metal parts of the capacitor of the present application.

[0062] Figure 7 This is a schematic diagram of another example of the configuration of metal components of the capacitor of the present application.

[0063] Figure 8 is a schematic diagram of another example of a capacitor of the present application.

[0064] Figure 9 is a schematic diagram of another example of a capacitor of the present application.

[0065] Figure 10 This is a schematic diagram of an example of the inductor of the present application.

[0066] Figure 11 This is a schematic top view of an example of the structure of the inductor of the present application.

[0067] Figure 12 This is a schematic perspective view of an example of the structure of the inductor of the present application.

[0068] Figure 13 This is a schematic diagram of an example of a resistor of the present application.

[0069] Figure 14 Schematic diagram of an optical chip configured with a bias device according to the present application.

[0070] Figure 15 Is a Figure 4 The capacitors shown and Figure 10 Schematic diagram of the structure of an optical chip with an inductor and a bias device.

[0071] Figure 16 Is a Figure 8 The capacitors shown and Figure 10 Schematic diagram of the structure of an optical chip with an inductor and a bias device.

[0072] Figure 17 This is a schematic diagram of an optical chip configured with a transmit equalizer according to the present application.

[0073] Figure 18 Is a Figure 10 The diagram shows the structure of an optical chip with a transmit equalizer and an inductor configuration.

[0074] Figure 19 This is a schematic diagram of an optical chip configured with a differentiator according to the present application.

[0075] Figure 20 This is a schematic diagram of an optical chip configured with a transmit equalizer according to the present application.

[0076] Figure 21 Is a Figure 9 The capacitors shown and Figure 13 The resistor configuration shown is a schematic diagram of the structure of an optical chip with a transmit equalizer.

[0077] Figure 22 This is a schematic diagram of an example of the optical module of the present application.

[0078] Figure 23 This is a schematic diagram of an example of a communication device of the present application. DETAILED DESCRIPTION

[0079] The technical solution in this application will be described below with reference to the accompanying drawings.

[0080] Figure 1 is a schematic structural diagram of the optical chip of this application, such as Figure 1 As shown, the optical chip 100 of the present application includes a metal layer 110 and a semiconductor layer 120 .

[0081] A semiconductor portion 132 (or a semiconductor component or semiconductor structure with a PN junction formed therein) of a photoelectric conversion device 130 such as an optical modulator or a photodiode is disposed in the semiconductor layer 120 .

[0082] Furthermore, a metal portion (or metal component or metal structure) 134 is disposed in the metal layer 110 for transmitting signals between the semiconductor portion 132 and an external device (ie, a device independently disposed from the optical chip).

[0083] In this application, unless otherwise specified, "metal part", "metal component" and "metal structure" all refer to components or parts made of metal and can be used interchangeably. In order to avoid redundancy, the description of the same or similar situations will be omitted below.

[0084] In addition, in the present application, one or more electronic devices 140 are integrated into the optical chip.

[0085] As an example but not limitation, the electronic device 140 may include an electronic device simulating an electrical layer, for example, one or more electronic devices such as a resistor, an inductor, or a capacitor.

[0086] The electronic device 140 includes a metal portion 144 , and the metal portion 144 is disposed in the metal layer.

[0087] Furthermore, some electronic devices (eg, capacitors) include a semiconductor portion 142 , which is disposed on the semiconductor layer 120 .

[0088] Figure 2 Schematic diagram of the structure of the optical modulator 200 of the present application. The optical modulator 200 is used to modulate light based on a radio frequency signal (or an electrical signal or an electrical domain signal) to generate an optical signal (or an optical domain signal), such as Figure 2 As shown, the optical modulator of the present application includes: a semiconductor part and a metal part.

[0089] The metal portion includes multiple layers of metal for transmitting signals between an external device (eg, an electric chip) and the semiconductor portion.

[0090] It should be noted that the metal materials of different layers in the multi-layer metal layer can be different. For example, the top metal layer of the metal portion can be aluminum, for example. Below the aluminum layer is copper, for example. Furthermore, the bottom metal layer of the metal portion (i.e., the layer in contact with the semiconductor portion) can be a metal material that has good ohmic contact with the semiconductor.

[0091] In addition, in the present application, the metal part of the optical modulator can also be referred to as the metal component of the optical chip, that is, the metal component can be considered to be independent of the optical modulator and used through assembly. In the following, in order to avoid redundancy, the description of the same or similar situations is omitted.

[0092] The semiconductor portion includes a P-type doping region 210 and an N-type doping region 220 arranged side by side in a horizontal direction.

[0093] The P-type doped region may be formed by a P-type doped optical waveguide, which is realized by doping phosphorus atoms in the waveguide.

[0094] The N-type doped region may be formed by an N-type doped optical waveguide, and the N-type doped optical waveguide is realized by doping boron atoms in the waveguide.

[0095] As an example and not a limitation, the material of the waveguide may include, but is not limited to, lithium niobate (LiNbO3), Group III-V semiconductor compounds, silicon dioxide (SiO2), silicon-on-insulator (SOI), polymer or glass, etc.

[0096] like Figure 2 As shown, the P-type doping region 210 includes a region 212 and a region 214 . A groove 216 is formed in the region 214 , and the region 212 is disposed in the groove 216 . The P-type doping concentration of the region 212 is greater than the P-type doping concentration of the region 214 .

[0097] The N-type doping region 220 includes a region 222 and a region 224 . A groove 226 is formed in the region 224 . The region 222 is disposed in the groove 226 . The N-type doping concentration of the region 222 is greater than that of the region 224 .

[0098] It should be noted that Figure 2 In the above, P and P++ represent P-type doped optical waveguides, and the P-type dopant concentration of the P-type dopant represented by P++ is greater than the P-type dopant concentration of the P-type dopant represented by P. N and N++ represent N-type doped optical waveguides, and the N-type dopant concentration of the N-type dopant represented by N++ is greater than the N-type dopant concentration of the N-type dopant represented by N. Hereinafter, descriptions of identical or similar cases will be omitted.

[0099] And, as Figure 2 As shown, the region 214 and the region 224 are arranged in contact with each other, and a PN junction is formed at the junction of the region 214 and the region 224 .

[0100] The region 212 and the region 222 are respectively connected to metal in the metal layer.

[0101] It should be understood that the above Figure 2 The structure of the optical modulator listed is only an example description, and the present application is not limited thereto. The structure and function of the optical modulator may also be similar to those in the prior art. In order to avoid redundancy, the detailed description is omitted here.

[0102] Figure 3 This is a schematic diagram of the structure of the photodiode (PD) 300 of the present application. A photodiode is a semiconductor device composed of a PN junction and has a unidirectional conductive characteristic. The photodiode works under the action of reverse voltage. When irradiated by light of normal illumination, the current generated is called photocurrent. If a load is connected to the external circuit, an electrical signal is obtained on the load, and the electrical signal changes accordingly with the change of light. Figure 3 As shown, the optical modulator of the present application includes: a semiconductor part and a metal part.

[0103] The metal portion includes multiple layers of metal for transmitting signals between an external device (eg, an electric chip) and the semiconductor portion.

[0104] It should be noted that the metal materials of different layers in the multi-layer metal layer can be different. For example, the top metal layer of the metal portion can be aluminum, for example. Below the aluminum layer is copper, for example. Furthermore, the bottom metal layer of the metal portion (i.e., the layer in contact with the semiconductor portion) can be a metal material that has good ohmic contact with the semiconductor.

[0105] In addition, in this application, the metal part of the photodiode can also be called the metal component of the optical chip, that is, the metal component can be considered to be independent of the photodiode and used in an assembled manner. In the following, in order to avoid redundancy, the description of the same or similar situations is omitted.

[0106] The semiconductor portion includes a first N-type doped optical waveguide 310 , a P-type doped region 320 , and an N-type doped region 330 .

[0107] The first N-type doped optical waveguide 310 is composed of a P-type doped optical waveguide.

[0108] The P-type doping region 320 may be composed of a P-type doped optical waveguide, and the P-type doping concentration of the P-type doping region 320 is greater than the P-type doping concentration of the first N-type doped optical waveguide 310 .

[0109] As an example and not a limitation, the base materials of the waveguide of the P-type doped region 320 and the first N-type doped optical waveguide may include, but are not limited to, lithium niobate (LiNbO3), Group III-V semiconductor compounds, silicon dioxide (SiO2), silicon-on-insulator (SOI), polymer or glass, etc.

[0110] The N-type doped region 330 may be formed of an N-type doped optical waveguide, and the base material of the N-type doped optical waveguide may include germanium (Ge).

[0111] Moreover, in the present application, the N-type doping region 330 may include a bottom layer 332 and a top layer 334 , and the N-type doping concentration of the top layer 334 is greater than the N-type doping concentration of the bottom layer 332 .

[0112] like Figure 3 As shown, the bottom layer 332 and the first N-type doped optical waveguide 310 are bonded together, and a PN junction is formed at the junction of the bottom layer 332 and the first N-type doped optical waveguide 310 .

[0113] The P-type doped region 320 and the top layer 334 are respectively connected to metals in the metal layer.

[0114] It should be understood that the above Figure 2 The structure of the optical modulator listed is only an example description, and the present application is not limited thereto. The structure and function of the optical modulator may also be similar to those in the prior art. In order to avoid redundancy, the detailed description is omitted here.

[0115] The capacitor of the present application can be realized by semiconductor materials. The principle is to form a PN junction by doping phosphorus atoms and boron atoms in the optical waveguide, and transmit the input high-frequency signal to the device or output electrode in the form of carrier changes.

[0116] Specifically, when a high-frequency RF signal is input into an N-type doped optical waveguide, it depletes carriers within the PN junction. Different RF signal voltages result in varying degrees of carrier depletion within the PN junction. For example, an RF signal of '0' results in no change in the carrier concentration within the PN junction; a RF signal of '1' causes carrier depletion within the PN junction; and a RF signal of '2' widens the carrier depletion layer within the PN junction.

[0117] Figure 4 and Figure 5 FIG. 4 is a front view of an example of a capacitor 400 of the present application. Figure 4 or Figure 5 As shown, the capacitor 400 includes a semiconductor portion 410 and a metal portion 420 .

[0118] It should be noted that the metal portion 420 can also be considered as a metal component (or metal structure) of the optical chip.

[0119] That is, it can be considered that the metal part and the capacitor (ie, the semiconductor of the capacitor) are independent of each other and are used in an assembled manner. In the following, in order to avoid redundancy, the description of the same or similar situations is omitted.

[0120] The semiconductor portion 410 includes a first N-type doped optical waveguide 412 , at least one optical waveguide 414 , and at least two optical waveguides 416 .

[0121] The first N-type doped optical waveguide 412 is composed of an N-type doped optical waveguide, the optical waveguide 414 is composed of a P-type doped optical waveguide, and the optical waveguide 416 is composed of an N-type doped optical waveguide.

[0122] The N-type doping concentration of the optical waveguide 416 is greater than the N-type doping concentration of the first N-type doped optical waveguide 412 .

[0123] Furthermore, the optical waveguide 414 includes a low-concentration layer 4142 and a high-concentration layer 4144 that are stacked, wherein the P-type dopant concentration of the high-concentration layer 4144 is greater than the P-type dopant concentration of the low-concentration layer 4142 .

[0124] The optical waveguide 414 is disposed on the first N-type doped optical waveguide 412 . Specifically, the low-concentration layer 4142 of the optical waveguide 414 is disposed on the first N-type doped optical waveguide 412 , that is, between the first N-type doped optical waveguide 412 and the high-concentration layer 4144 .

[0125] In one implementation, Figure 4 or Figure 5 As shown, a groove 4122 is formed in the region of the first N-type doped optical waveguide 412 for disposing the optical waveguide 414 (or the low-concentration layer 4142 ), and the optical waveguide 414 (or the low-concentration layer 4142 ) is embedded in the groove 4122 .

[0126] In this case, the portion of the optical waveguide 414 that contacts the bottom surface and sidewall of the groove 4122 forms a PN junction, thereby increasing the area of ​​the PN junction and improving the performance and efficiency of the capacitor.

[0127] It should be understood that the configuration structures listed above are only exemplary and the present application is not limited thereto. For example, in another implementation, the area of ​​the first N-type doped optical waveguide 412 used to configure the optical waveguide 414 (or the low-concentration layer 4142) can also be formed as a plane.

[0128] Furthermore, the optical waveguide 416 is disposed on the first N-type doped optical waveguide 412 .

[0129] In one implementation, Figure 4 or Figure 5 As shown, a groove 4124 is formed in the region of the first N-type doped optical waveguide 412 for disposing the optical waveguide 416 , and the optical waveguide 416 is embedded in the groove 4124 .

[0130] It should be understood that the configuration structures listed above are only exemplary and the present application is not limited thereto. For example, in another implementation, the region of the first N-type doped optical waveguide 412 used to configure the optical waveguide 416 may also be formed as a plane.

[0131] like Figure 4 As shown, there may be one optical waveguide 414 and two optical waveguides 416 . In this case, the optical waveguide 414 is located between the two optical waveguides 416 .

[0132] Alternatively, the optical waveguide 414 may be multiple, and each optical waveguide 414 may be located between two optical waveguides 416, that is, in the present application, the optical waveguide 414 and the optical waveguide 416 may be staggered. Figure 5 As shown, there may be two optical waveguides 414 and three optical waveguides 416 .

[0133] The metal portion 420 includes multiple layers of metal for transmitting signals between an external device (eg, an electric chip) and the semiconductor portion.

[0134] It should be noted that the metal materials of different layers in the multi-layer metal can be different. For example, the top metal of the metal portion can be, for example, aluminum. Below the aluminum layer is, for example, copper. Of course, other metal materials can also be used, and this application is not limited thereto. In addition, the lowest layer of the metal portion (i.e., the portion in contact with the semiconductor portion 410) can be a material with a good ohmic contact effect with the semiconductor (i.e., the optical waveguide 416 and / or the optical waveguide 414).

[0135] Ohmic contact refers to the formation of a potential barrier layer when a semiconductor contacts a metal. However, when the semiconductor doping concentration is high, electrons can tunnel through the barrier, forming a low-resistance ohmic contact. Ohmic contact is crucial for semiconductor devices. A good ohmic contact facilitates the input and output of current. Different alloys with different formulations are often used as ohmic contact materials for different semiconductor materials.

[0136] like Figure 4 or Figure 5As shown, the metal portion 420 may include a metal portion 4101 and a metal portion 4102, wherein the metal portion 4101 includes multiple layers of metal, and the bottom of the metal portion 4101 is connected to (or in ohmic contact with) the optical waveguide 416, and the top of the metal portion 4101 is used to connect to other devices (e.g., electronic chips, etc.). The metal portion 4102 includes at least one layer of metal, and the bottom of the metal portion 4102 is connected to (or in ohmic contact with) the optical waveguide 414, and the top of the metal portion 4102 is used to connect to other devices (e.g., optical modulators, etc.). The metal portion 4101 and the metal portion 4102 are insulated.

[0137] Figure 6 FIG. 4 is a top view schematically showing an example of the configuration of the metal portion of the capacitor (ie, the metal portion 4101 and the metal portion 4102). Figure 6 As shown, in one implementation, the metal portion 4101 includes multiple substructures, each corresponding to a plurality of optical waveguides 416. The bottom of each substructure is connected to (or in ohmic contact with) the corresponding optical waveguide 416, and the multiple substructures are connected to each other via one or more layers of metal. This allows for flexible handling of situations where the optical waveguides 416 and 414 are interleaved.

[0138] Figure 7 FIG. 4 is a top view schematically showing another example of the configuration of the metal portion of the capacitor (ie, the metal portion 4101 and the metal portion 4102). Figure 7 As shown, in one implementation, the metal portion 4101 may also be formed as an integrated structure. In this case, the top view shape of the metal portion 4101 may be set to semi-surround the metal portion 4102 to meet the requirement of staggered configuration of the optical waveguide 416 and the optical waveguide 414.

[0139] Figure 8 FIG. 8 is a front view schematic diagram of an example of a capacitor 800 of the present application. Figure 8 As shown, the capacitor 800 includes a semiconductor portion 810 and a metal portion 820 .

[0140] The semiconductor portion 810 includes an optical waveguide 812 , an optical waveguide 814 , an optical waveguide 816 , and an optical waveguide 818 arranged side by side in a horizontal direction.

[0141] The optical waveguide 812 and the optical waveguide 814 are P-type doped optical waveguides.

[0142] The concentration of the P-type doping in the optical waveguide 812 is greater than the concentration of the P-type doping in the optical waveguide 814 .

[0143] Furthermore, the optical waveguide 816 and the optical waveguide 818 are N-type doped optical waveguides.

[0144] The concentration of the N-type doping in the optical waveguide 818 is greater than the concentration of the N-type doping in the optical waveguide 816 .

[0145] like Figure 8 As shown, in one implementation, the optical waveguide 814 is formed with a groove, and the optical waveguide 812 is embedded in the groove. Also, the optical waveguide 816 is formed with a groove, and the optical waveguide 818 is embedded in the groove.

[0146] It should be understood that Figure 8 The configurations listed are merely exemplary, and the present application is not limited thereto. For example, grooves may not be formed on the optical waveguide 820 and the optical waveguide 830 .

[0147] like Figure 8 As shown, the optical waveguide 814 and the optical waveguide 816 are bonded together, and a junction between the optical waveguide 814 and the optical waveguide 816 forms a PN junction.

[0148] It should be noted that Figure 4 、 Figure 5 and Figure 8 FIG. 1 shows the configuration of the optical chip (specifically, the semiconductor portion of the optical chip) when the optical chip is installed in a transmitter. The configuration of the optical chip when the optical chip is installed in a receiver can be appropriately changed, such as Figure 9 The configuration of the capacitors in this case is shown.

[0149] like Figure 9 As shown, the capacitor 900 includes a semiconductor portion 910 and a metal portion 920 .

[0150] The semiconductor portion 910 includes a first N-type doped optical waveguide 912 , at least one optical waveguide 914 , and at least two optical waveguides 916 .

[0151] The first N-type doped optical waveguide 912 is composed of a P-type doped optical waveguide, the optical waveguide 914 is composed of an N-type doped optical waveguide, and the optical waveguide 916 is composed of a P-type doped optical waveguide.

[0152] The P-type doping concentration of the optical waveguide 916 is greater than the P-type doping concentration of the first N-type doped optical waveguide 912 .

[0153] Furthermore, the optical waveguide 914 includes a low-concentration layer 9142 and a high-concentration layer 9144 that are stacked, wherein the concentration of N-type doping in the high-concentration layer 9144 is greater than the concentration of N-type doping in the low-concentration layer 9142 .

[0154] The optical waveguide 914 is disposed on the first N-type doped optical waveguide 912 . Specifically, the low-concentration layer 9142 of the optical waveguide 914 is disposed on the first N-type doped optical waveguide 912 , that is, between the first N-type doped optical waveguide 912 and the high-concentration layer 9144 .

[0155] In one implementation, Figure 9 As shown, a groove 9122 is formed in the region of the first N-type doped optical waveguide 912 for configuring the optical waveguide 914 (or the low-concentration layer 9142 ), and the optical waveguide 914 (or the low-concentration layer 9142 ) is embedded in the groove 9122 .

[0156] In this case, the portion of the optical waveguide 914 that contacts the bottom surface and sidewall of the groove 9122 forms a PN junction, thereby increasing the area of ​​the PN junction and improving the performance and efficiency of the capacitor.

[0157] It should be understood that the configuration structures listed above are only exemplary and the present application is not limited thereto. For example, in another implementation, the area of ​​the first N-type doped optical waveguide 912 used to configure the optical waveguide 914 (or the low-concentration layer 9142) can also be formed into a plane.

[0158] Furthermore, the optical waveguide 916 is disposed on the first N-type doped optical waveguide 912 .

[0159] In one implementation, Figure 9 As shown, a groove 9124 is formed in the region of the first N-type doped optical waveguide 912 for disposing the optical waveguide 916 , and the optical waveguide 916 is embedded in the groove 9124 .

[0160] It should be understood that the configuration structures listed above are only exemplary and the present application is not limited thereto. For example, in another implementation, the region of the first N-type doped optical waveguide 912 used to configure the optical waveguide 916 may also be formed as a plane.

[0161] like Figure 9 As shown, there may be one optical waveguide 914 and two optical waveguides 916 . In this case, the optical waveguide 914 is located between the two optical waveguides 916 .

[0162] Alternatively, there may be a plurality of optical waveguides 914 , and each optical waveguide 914 may be located between two optical waveguides 916 . That is, in the present application, the optical waveguides 914 and 916 may be arranged in an alternating manner.

[0163] The metal portion 920 includes multiple layers of metal for transmitting signals between an external device (eg, an electric chip) and the semiconductor portion.

[0164] It should be noted that different layers in the multi-layer metal layer can be made of different metal materials. For example, the top metal layer of the metal portion can be aluminum, for example. Below the aluminum layer is copper, for example. Furthermore, the lowest layer of the metal portion (i.e., the portion in contact with the semiconductor portion 910) can be made of a material that provides good ohmic contact with the semiconductor (i.e., the optical waveguide 916 and / or the optical waveguide 914).

[0165] like Figure 9 As shown, the metal portion 920 may include a metal portion 9201 and a metal portion 9202, wherein the metal portion 9201 includes multiple layers of metal, and the bottom 92012 of the metal portion 9201 is connected to (or in ohmic contact with) the optical waveguide 916, and the top 92014 of the metal portion 9201 is used to connect to other devices (e.g., electronic chips, etc.). The metal portion 9202 includes at least one layer of metal, and the bottom 92022 of the metal portion 9202 is connected to (or in ohmic contact with) the optical waveguide 914, and the top 92012 of the metal portion 9202 is used to connect to other devices (e.g., photodiodes, etc.). Among them, the metal portion 9201 and the metal portion 9202.

[0166] Moreover, in the present application, the capacitance value C of the capacitor is determined by the total number of charges Q in the optical waveguide, that is, C=Q / V, where V is the applied voltage. Therefore, the capacitance value can be designed and changed by changing the doping concentration, the geometric parameters of the doping area, the length of the PN junction, and the like. For example, a symmetrical horizontal PN junction structure with a doping concentration of P=N=1e18cm-3, P++=N++=1e20cm-3 and a waveguide width of 450nm has a capacitance of approximately 0.35fF / μm at a voltage of 2V. If the PN junction length is 100μm, its capacitance value is approximately 35fF. Increasing the doping concentration, increasing the area with high concentration doping, or increasing the length of the PN junction can all increase its capacitance value.

[0167] Figure 10 FIG. 1 is a schematic diagram of an example of an inductor of the present application. Figure 10 As shown, the inductor of the present application is composed of multiple layers of metal, wherein the top metal layer of the multiple layers of metal of the inductor can be, for example, aluminum, and the metal below the top metal layer can be, for example, copper.

[0168] Moreover, there are intersections between the multiple layers of metal. Figure 11 and Figure 12 The schematic structure of the cross is shown in Figure 1. By changing the geometric parameters such as the length and width of the metal layer, different inductance values ​​can be achieved. The inductance value can be determined by software simulation. The main purpose of designing it as a multi-layer metal structure is to achieve a large inductance value while reducing the capacitance and resistance of the structure as much as possible. It should be noted that Figures 10 to 12The inductor shown is only a schematic structure, and the present application is not limited thereto. The structure of the inductor may also be the same as or similar to that in the prior art.

[0169] Figure 13 FIG. 1 is a schematic diagram of an example of a resistor of the present application. Figure 13 As shown, the resistor of the present application includes one or more layers of metal, wherein the top metal of the multi-layer metal may be, for example, aluminum, and the multi-layer metal may include one or more layers of titanium nitride (TiN).

[0170] Specifically, metal has a certain resistivity, so the metal in the metal layer of the optical chip can be used to form an integrated resistor. The length L and width d of the metal layer determine the resistance value: R = ρL / dh, where the resistivity ρ of the metal layer is an inherent property of the material, and the metal layer depth h is a fixed value in the process. For example, a TiN metal layer with a length of 75μm and a width of 15μm can form a resistance of approximately 50Ω. Increasing the length of the metal layer, reducing its width, using a metal with higher conductivity, or reducing the metal layer depth during the wafer process can also increase the resistance value.

[0171] It should be noted that the above-mentioned solution of providing resistance through TiN is only an example, and the present application is not limited thereto. One or more layers of copper can also be used to provide resistance, and the resistance value is also determined by R=ρL / dh.

[0172] Figure 14 Schematic diagram of the optical chip 1400 configured with a bias device of the present application. Figure 14 As shown, the optical chip 1400 includes an optical modulator 1410 and a biaser 1420 .

[0173] The structure of the optical modulator 1410 can be Figure 2 The structures shown are similar, and the detailed description is omitted here to avoid redundancy.

[0174] The biasing element 1420 includes a capacitor 1422 and an inductor 1424 .

[0175] The structure of the capacitor 1422 can be Figures 4 to 8 The structures shown are similar, and detailed description is omitted here to avoid redundancy.

[0176] The structure of the inductor 1424 can be Figures 10 to 14 The structures shown are similar, and detailed description is omitted here to avoid redundancy.

[0177] The bias tee 1420 can be a T-type bias tee (Bias-T). A Bias-T is a three-port network. The high-frequency port inputs a radio frequency (RF) signal, or an RF drive signal, and the low-frequency port inputs a direct current (DC) bias voltage. The combined port is connected to the device so that the device can receive both the RF signal and the DC bias at the same time.

[0178] That is, Figure 14 As shown, the RF signal is input to the capacitor 1422, the DC bias voltage is input to the inductor 1424, and the RF signal processed by the capacitor 1422 (or, the RF signal output from the capacitor 1422 based on the change of the carriers of the capacitor 1422) and the DC bias voltage processed by the inductor 1424 (or, the RF signal output from the capacitor 1424 based on the change of the carriers of the capacitor 1424) are combined and input to the optical modulator 1410.

[0179] Next, combine Figure 15 and Figure 16 The connection relationship between the bias device 1420 and the optical modulator 1410 will be mainly described.

[0180] Figure 15 Shown with Figure 4 The connection structure of the optical chip of the capacitor shown in FIG. Figure 15 As shown, the RF signal from an external device (e.g., an electronic chip) is input into the N-type doped optical waveguide of capacitor 1422 through the metal component, and then the RF signal processed by the capacitor 1422 is output through the metal component #1 connected to the P-type doped optical waveguide of the capacitor 1422.

[0181] The metal component #1 is connected to the metal component #2.

[0182] The metal component #2 is connected to the N-type doped optical waveguide of the optical modulator 1410. The P-type doped optical waveguide of the optical modulator 1410 is grounded.

[0183] Furthermore, the RF signal processed by the capacitor 1422 can be input into the N-type doped optical waveguide of the optical modulator 1410 .

[0184] Furthermore, a DC bias voltage from an external device is input to the inductor 1424 , one end of which is connected to the metal component # 2 .

[0185] Furthermore, the DC bias voltage processed by the capacitor 1422 is applied to the N-type doped optical waveguide of the optical modulator 1410 .

[0186] Thus, the optical modulator 1410 can generate an optical signal by performing modulation processing based on the DC bias voltage processed by the capacitor 1422 and the RF signal processed by the capacitor 1422. The modulation method and process can be similar to those in the prior art, and a detailed description thereof is omitted here to avoid redundancy.

[0187] The semiconductor components of optical modulator 1410 and the semiconductor components of capacitor 1422 are co-located on the semiconductor layer of the optical chip. The metal components of optical modulator 1410, capacitor 1422, and inductor 1424 are co-located on the metal layer of the optical chip. To avoid redundancy, descriptions of identical or similar components are omitted below.

[0188] Figure 16 Shown with Figure 8 The connection structure of the optical chip of the capacitor shown in FIG. Figure 16 As shown, the RF signal from an external device (e.g., an electronic chip) is input into the N-type doped optical waveguide of capacitor 1422 through the metal component, and then the RF signal processed by the capacitor 1422 is output through the metal component #1 connected to the P-type doped optical waveguide of the capacitor 1422.

[0189] The metal component #1 is connected to the metal component #2.

[0190] The metal component # 2 is connected to the N-type doped optical waveguide of the optical modulator 1410 .

[0191] Furthermore, the RF signal processed by the capacitor 1422 can be input into the N-type doped optical waveguide of the optical modulator 1410 .

[0192] Furthermore, a DC bias voltage from an external device is input to the inductor 1424 , one end of which is connected to the metal component # 2 .

[0193] Furthermore, the DC bias voltage processed by the capacitor 1422 is applied to the N-type doped optical waveguide of the optical modulator 1410 .

[0194] Thus, the optical modulator 1410 can generate an optical signal by performing modulation processing based on the DC bias voltage processed by the capacitor 1422 and the RF signal processed by the capacitor 1422. The modulation method and process can be similar to those in the prior art, and a detailed description thereof is omitted here to avoid redundancy.

[0195] Figure 17 Schematic diagram of an optical chip configured with a transmission equalizer according to the present application. Figure 17 As shown, the optical chip 1700 includes an optical modulator 1710 and an inductor 1720 .

[0196] The structure of the optical modulator 1710 can be Figure 2 The structures shown are similar, and the detailed description is omitted here to avoid redundancy.

[0197] The structure of the inductor 1720 can be Figures 10 to 12 The structures shown are similar, and detailed description is omitted here to avoid redundancy.

[0198] like Figure 17 As shown, the RF signal is input to the inductor 1720, and the RF signal processed by the inductor 1720 is input to the metal component connected to (or ohmically contacted with) the optical modulator 1710 (specifically, the N-type doped optical waveguide of the optical connector 1710), and then input to the optical modulator 1710, and the P-type doped optical waveguide of the optical modulator 1710 is grounded.

[0199] Figure 18 Shown Figure 17 The connection structure of each component of the optical chip shown is as follows: Figure 18 As shown, one end of the inductor 1720 is configured on the top layer of the metal layer of the optical chip for receiving a radio frequency signal from an external device (eg, an electronic chip), and the other end of the inductor 1720 is connected to the metal component #3.

[0200] The metal component #3 is connected to the N-type doped optical waveguide of the optical modulator 1710.

[0201] Thus, the RF signal can be input to the inductor 1720 (configured on the metal layer of the optical chip), and then the RF signal processed by the inductor 1720 is input to the N-type doped optical waveguide of the optical modulator 1710 via the metal component #3.

[0202] Furthermore, the P-type doped optical waveguide of the optical modulator 1710 is grounded.

[0203] Thus, the optical modulator 1710 can generate an optical signal by performing modulation processing based on the RF signal processed by the inductor 1720. The modulation method and process can be similar to those in the prior art, and a detailed description thereof will be omitted here to avoid redundancy.

[0204] It should be noted that the transmit equalizer and bias device provided in this application can also be used in combination, that is, the optical chip can be configured with both the bias device and the transmit equalizer. Figure 15 Based on the optical chip shown, RF signals can be transmitted via Figure 10 The processed input capacitance 1422 of the inductor shown is specifically the N++ of the capacitance 1422 .

[0205] Figure 19 Schematic diagram of an optical chip equipped with a differentiator according to the present application. Figure 19 As shown, the optical chip 1900 includes an optical modulator 1910 and a differentiator.

[0206] The differentiator includes a resistor 1920 and a resistor 1930 .

[0207] The structure of the optical modulator 1910 can be Figure 2 The structures shown are similar, and the detailed description is omitted here to avoid redundancy.

[0208] The structure of the resistor 1920 and the resistor 1930 can be Figure 13 The structures shown are similar, and detailed description is omitted here to avoid redundancy.

[0209] like Figure 19 As shown, one end of the resistor 1920 is configured on the top layer of the metal layer of the optical chip and is grounded, and the other end of the resistor 1920 is connected to the metal component #4.

[0210] One end of the metal component #4 is disposed on the top metal layer of the optical chip, and is used to receive the differential signal #1 from an external device (eg, an electronic chip).

[0211] The other end of the metal component #4 is connected to the P-type doped optical waveguide of the optical modulator 1910.

[0212] One end of the resistor 1930 is disposed on the top layer of the metal layer of the optical chip for receiving a DC bias voltage, and the other end of the resistor 1930 is connected to the metal component #5.

[0213] One end of the metal component #5 is disposed on the top metal layer of the optical chip, and is used to receive the differential signal #2 from an external device (eg, an electronic chip).

[0214] The other end of the metal component # 5 is connected to the N-type doped optical waveguide of the optical modulator 1910 .

[0215] Thus, the optical modulator 1210 can perform modulation processing based on the input signal to generate an optical signal. The modulation method and process can be similar to those in the prior art, and a detailed description thereof is omitted here to avoid redundancy.

[0216] It should be noted that the transmission equalizer and the differentiator provided in this application can also be used in combination, that is, the optical chip can be configured with both the differentiator and the transmission equalizer. Figure 19 Based on the optical chip shown, two differential RF signals can be transmitted via Figure 10 The processed inductances shown are respectively input into the optical modulator 1910 , specifically the P++ and N++ of the optical modulator 1910 .

[0217] Figure 20 Schematic diagram of an optical chip configured with a transmission equalizer according to the present application. Figure 20 As shown, the optical chip 2000 includes a photodiode 2010 and a receiving equalizer.

[0218] The receiving equalizer includes a capacitor 2020 , a capacitor 2030 , and a resistor 2040 .

[0219] The structure of the photodiode 2010 can be Figure 3 The structures shown are similar, and the detailed description is omitted here to avoid redundancy.

[0220] The capacitor 2020 and the capacitor 2030 can be Figure 9 The structures shown are similar, so the detailed description is omitted here to avoid redundancy.

[0221] The structure of the resistor 2040 can be Figure 13 The structures shown are similar, and detailed description is omitted here to avoid redundancy.

[0222] like Figure 20 As shown, the radio frequency signal generated by the photodiode 2010 is input to the capacitor 2020, the capacitor 2030 is grounded via the resistor 2040, and the output ends of the capacitor 2020 and the capacitor 2040 are connected, so that the balanced radio frequency signal can be output.

[0223] Figure 21 Shown Figure 20 The connection structure of each component of the optical chip shown is as follows: Figure 20 As shown, the radio frequency signal generated by the photodiode 2010 is input from the N-type doped optical waveguide of the photodiode 2010 , and the N-type doped optical waveguide of the photodiode 2010 is connected to the metal component # 6 .

[0224] Furthermore, the metal component #6 is connected to the metal component #7.

[0225] The metal component #7 is connected to (or in other words, makes ohmic contact with) the N-type doped optical waveguide of the capacitor 2020 .

[0226] Thus, the radio frequency signal can be input to the N-type doped optical waveguide of the capacitor 2020 .

[0227] The P-type doped optical waveguide of the capacitor 2030 is connected to one end of the metal component #8, and the other end of the metal component #8 is configured on the top layer of the metal layer of the optical chip.

[0228] The N-type doped optical waveguide of capacitor 2030 is connected to metal component #9.

[0229] The metal component #9 is connected to one end of the resistor 2040, and the other end of the resistor 2040 is grounded.

[0230] The P-type doped optical waveguide of the photodiode 2010 receives a bias voltage (eg, a DC bias voltage).

[0231] Thus, the balanced radio frequency signal can be output from the top layer of the metal layer of the optical chip 2000 .

[0232] Figure 22 is a schematic diagram of an example of an optical module of the present application, such as Figure 22 As shown, the optical module 2200 includes a substrate 2210 , an optical chip 2220 and an electrical chip 2230 .

[0233] The substrate 2210 may include but is not limited to a ceramic substrate or a printed circuit board (PCB).

[0234] The optical chip 2220 is specifically described above Figures 1 to 20 The structure of any implementation method.

[0235] The electrical chip 2230 includes but is not limited to a serializer / deserializer (SerDes).

[0236] The optical chip 2220 and the electrical chip 2230 are connected via a signal transmission line 2240 disposed on the substrate 2210 .

[0237] By integrating electronic components that need to be configured on a substrate into an optical chip, the design difficulty of the optical module can be reduced, and the miniaturization of the optical module can be achieved.

[0238] Moreover, by integrating electronic devices that need to be configured on the electrical chip into the optical chip, the design difficulty of the electrical chip can be reduced, and the miniaturization of the electrical chip can be achieved, especially the size and cost of the 7nm or 5nm electrical chip can be reduced.

[0239] Figure 23 is a schematic diagram of an example of a communication device of the present application, such as Figure 23 As shown, the communication device 2300 includes a processor 2310 and a transceiver 2320. The processor 2310 is used to process the data to be sent to generate a digital signal. The transceiver 2320 includes Figure 22 The optical module shown, the transceiver 2320 is used to process the digital signal, for example, to process the business signal through the electrical chip to generate a radio frequency signal, to process the radio frequency signal through the optical chip to generate an optical signal, and to send the optical signal to other communication devices.

[0240] Alternatively, the optical chip processes the optical signal received by the transceiver to generate a radio frequency signal, the electrical chip processes the radio frequency signal to generate a digital signal, and the processor processes the data signal to obtain the data carried by the digital signal.

[0241] Professional technicians can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0242] In the several embodiments provided in this application, it should be understood that the disclosed systems and devices can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0243] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0244] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0245] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. An optical chip, characterized in that: comprising at least one optical modulator and at least one electronic device, wherein The electronic device includes at least one of a capacitor, a resistor or an inductor, and the electronic device is used to perform signal processing on the radio frequency signal; The optical modulator is used to perform optical modulation processing according to the radio frequency signal after the signal processing to generate an optical signal, the optical modulator includes a P-type doped region and an N-type doped region, and a junction of the P-type doped region and the N-type doped region forms a PN junction; The electronic device further comprises a bias device, The optical chip also includes a first metal component and a second metal component, the first metal component is used to connect the biaser and the first optical modulator of the at least one optical modulator, the second metal component is connected to the biaser, and the first RF signal is input to the biaser via the second metal component.

2. The optical chip according to claim 1, wherein: The P-type doped region of the first optical modulator is grounded, and the N-type doped region of the first optical modulator is connected to the first metal component. The bias device includes a first capacitor and a first inductor, The first capacitor includes a P-type doped optical waveguide and an N-type doped optical waveguide, wherein a junction of the P-type doped optical waveguide and the N-type doped optical waveguide forms a PN junction. Wherein, the P-type doped optical waveguide is connected to the first metal component, The N-type doped optical waveguide is connected to the second metal component, The first end of the first inductor is used to receive a DC bias voltage, and the second end of the first inductor is connected to the first metal component.

3. The optical chip according to claim 2, wherein: The N-type doped optical waveguide includes a first N-type doped optical waveguide and at least two second N-type doped optical waveguides, and the P-type doped optical waveguide is at least one, and each P-type doped optical waveguide includes a first P-type doped optical waveguide and a second P-type doped optical waveguide, wherein The first P-type doped optical waveguide is located on the first N-type doped optical waveguide, and a junction of the first N-type doped optical waveguide and the first P-type doped optical waveguide forms a PN junction. The second P-type doped optical waveguide is located on the first P-type doped optical waveguide, and the P-type doping concentration of the second P-type doped optical waveguide is greater than the P-type doping concentration of the first P-type doped optical waveguide. The second N-type doped optical waveguide is located on the first N-type doped optical waveguide, and the N-type doping concentration of the second N-type doped optical waveguide is greater than the N-type doping concentration of the first N-type doped optical waveguide, and The first metal component is connected to each of the second P-type doped optical waveguides, The second metal component is connected to each of the at least two second N-type doped optical waveguides.

4. The optical chip according to claim 3, wherein: The P-type doped optical waveguide is located between the two second N-type doped optical waveguides.

5. The optical chip according to claim 3 or 4, characterized in that: There are at least two P-type doped optical waveguides.

6. The optical chip according to claim 2, wherein: The N-type doped optical waveguide includes a third N-type doped optical waveguide and a fourth N-type doped optical waveguide, and the P-type doped optical waveguide includes a third P-type doped optical waveguide and a fourth P-type doped optical waveguide, wherein A first side of the fourth P-type doped optical waveguide is connected to the third P-type doped optical waveguide, a second side of the fourth P-type doped optical waveguide is connected to the first side of the third N-type doped optical waveguide, and a P-type doping concentration of the third P-type doped optical waveguide is greater than a P-type doping concentration of the fourth P-type doped optical waveguide, and a junction of the fourth P-type doped optical waveguide and the third N-type doped optical waveguide forms a PN junction. The second side of the third N-type doped optical waveguide is connected to the fourth N-type doped optical waveguide, and the N-type doping concentration of the fourth N-type doped optical waveguide is greater than the N-type doping concentration of the third N-type doped optical waveguide, and The first metal component is connected to the third P-type doped optical waveguide, The second metal component is connected to the fourth N-type doped optical waveguide.

7. The optical chip according to any one of claims 2 to 4, characterized in that: The electronic device further includes a first transmit equalizer including a second inductor, and The first end of the second inductor is used to receive the first radio frequency signal, The second end of the second inductor is connected to the second metal component.

8. The optical chip according to any one of claims 1 to 4, characterized in that: The electronic device includes a second transmit equalizer, the second transmit equalizer includes a third inductor, The first end of the third inductor is used to receive the second radio frequency signal, and the second end of the third inductor is connected to the N-type doped region of the second optical modulator in the at least one optical modulator. The P-type doped region of the second optical modulator is grounded.

9. The optical chip according to any one of claims 1 to 4, characterized in that: The optical chip further includes a third metal component and a fourth metal component, wherein The P-type doped region of the third optical modulator in the at least one optical modulator is connected to the third metal component, and the first differential RF signal is input to the third optical modulator via the third metal component. The N-type doped region of the third optical modulator is connected to the fourth metal component, and the second differential RF signal is input to the third optical modulator via the fourth metal component. The electronic device includes a transmission differentiator, wherein the transmission differentiator includes a first resistor and a second resistor. A first end of the first resistor is grounded, and a second end of the first resistor is connected to the third metal component; The first end of the second resistor is used to receive a DC bias voltage, and the second end of the second resistor is connected to the fourth metal component.

10. The optical chip according to claim 9, wherein: The electronic device further includes a third transmit equalizer and a fourth transmit equalizer, the third transmit equalizer including a fourth inductor, the fourth transmit equalizer including a fifth inductor, and The first end of the fourth inductor is used to receive the first differential RF signal, and the second end of the fourth inductor is connected to the third metal component. The first end of the fifth inductor is used to receive the second differential RF signal, and the second end of the fifth inductor is connected to the fourth metal component.

11. An optical module, characterized in that: include: substrate; an electronic chip, for generating or processing radio frequency signals, located on the substrate; The optical chip according to any one of claims 1 to 10, located on the substrate; A signal line is located on the substrate and is used to transmit radio frequency signals between the service chip and the optical chip.

12. A communication device, characterized in that: include: A receiver comprising the optical module according to claim 11; and / or A transmitter comprising the optical module according to claim 11.

13. A communication device, characterized in that: include: A transceiver for receiving or sending a signal, the transceiver comprising the optical module according to claim 11, the optical module being used to modulate or demodulate the signal; A processor is used to perform signal processing on the signal.

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