A radio frequency module and a radio frequency device

Abstract

The present invention discloses a radio frequency module and radio frequency device, wherein the radio frequency module includes: N radio frequency units connected in series and / or in parallel; each radio frequency unit includes: a micro-coaxial transmission layer; including a first micro-coaxial transmission line and a second micro-coaxial transmission line, the first micro-coaxial transmission line including a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line including a second signal transmission metal and a second shielding metal; a radio frequency chip electrically connected between the first signal transmission metal and the second signal transmission metal; a plastic encapsulation layer covering the micro-coaxial transmission layer; wherein the plastic encapsulation layer includes a first implant ball connected to the first signal transmission metal via a first conductor post; and a second implant ball connected to the second signal transmission metal via a second conductor post. The above radio frequency module can effectively integrate multiple radio frequency chips with different functions.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a radio frequency module and a radio frequency device. Background Art

[0002] With the continuous advancement of integrated circuit technology, chips are required to be smaller and smaller. This has led to the need to integrate multi-functional RF chips or RF components, bringing new challenges to chip integration and packaging technologies. Furthermore, signal transmission between RF chips requires specialized transmission lines. The integration and packaging of multiple RF chips and signal transmission lines is a pressing issue. Summary of the Invention

[0003] The present invention provides a radio frequency module and a radio frequency device to solve or partially solve the technical problem of the current difficulty in integrating and packaging various radio frequency chips.

[0004] To solve the above technical problem, according to an optional embodiment of the present invention, a radio frequency module is provided, the radio frequency module comprising: N radio frequency units connected in series and / or in parallel;

[0005] Each of the radio frequency units includes:

[0006] The micro-coaxial transmission layer includes a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line includes a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line includes a second signal transmission metal and a second shielding metal;

[0007] a radio frequency chip, electrically connected between the first signal transmission metal and the second signal transmission metal;

[0008] A plastic encapsulation layer is provided covering the micro-coaxial transmission layer; wherein a first implant ball is provided on the plastic encapsulation layer and is connected to the first signal transmission metal through a first conductor post; and a second implant ball is connected to the second signal transmission metal through a second conductor post.

[0009] Optionally, the radio frequency module further includes a passivation layer, which is arranged between the micro-coaxial transmission layer and the plastic packaging layer;

[0010] The passivation layer includes a first redistribution layer disposed between the first conductor post and the first signal transmission metal; and a second redistribution layer disposed between the second conductor post and the second signal transmission metal.

[0011] Optionally, the radio frequency chip is arranged in the micro-coaxial transmission layer and electrically connected between the first signal transmission metal and the second signal transmission metal.

[0012] Furthermore, the RF module also includes: a connecting metal layer, which is arranged between the RF chip and the plastic packaging layer; one end of the connecting metal layer is connected to the first shielding metal, and the other end is connected to the second shielding metal.

[0013] Optionally, the RF chip is disposed within the plastic packaging layer and is connected to the first signal transmission metal through a third redistribution layer and is connected to the second signal transmission metal through a fourth redistribution layer.

[0014] Optionally, the passivation layer is made of an insulating organic material or an insulating inorganic material.

[0015] Optionally, a dielectric layer is filled between the first signal transmission metal and the first shielding metal.

[0016] Optionally, the radio frequency chip is any one of a power amplifier, a low noise amplifier, a filter, a duplexer, and a radio frequency switch.

[0017] Optionally, the radio frequency module further includes a substrate, and the micro-coaxial transmission layer is formed on the substrate.

[0018] According to another optional embodiment of the present invention, a radio frequency device is provided, comprising any radio frequency module in the aforementioned technical solutions.

[0019] Through one or more technical solutions of the present invention, the present invention has the following beneficial effects or advantages:

[0020] The present invention provides a radio frequency module, comprising a plurality of radio frequency units; in each radio frequency unit, a radio frequency chip is connected between two micro-coaxial transmission lines, and the micro-coaxial transmission lines have good radio frequency transmission performance, and are electrically interconnected through the micro-coaxial transmission lines to achieve signal transmission of the radio frequency chip; the plurality of radio frequency units are integrated together in parallel and / or series, and a plastic encapsulation layer is formed on the micro-coaxial transmission layer, and implant balls connected to the micro-coaxial signal lines are formed in the plastic encapsulation layer, thereby obtaining a radio frequency module that integrates multiple radio frequency chips and has multiple functions. The radio frequency module provided by the present invention effectively integrates multiple radio frequency chips with different functions, and the radio frequency module has a standard packaging form, which is convenient and direct to use.

[0021] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are specifically listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present invention. The same reference symbols are used throughout the drawings to represent the same components. In the drawings:

[0023] Figure 1 A schematic structural diagram of a radio frequency unit according to an embodiment of the present invention is shown;

[0024] Figure 2 A schematic diagram of a micro-coaxial transmission layer according to an embodiment of the present invention is shown;

[0025] Figure 3 The attached Figure 2 AA section view in;

[0026] Figure 4A A schematic diagram of spin coating a dielectric material on a substrate according to one embodiment of the present invention is shown;

[0027] Figure 4B shows a schematic diagram of depositing a first layer of metal according to one embodiment of the present invention;

[0028] Figure 4C shows a schematic diagram of depositing a second layer of metal according to one embodiment of the present invention;

[0029] Figure 4D FIG. 1 shows a schematic diagram of depositing a third metal layer according to an embodiment of the present invention;

[0030] Figure 4E FIG. 1 is a schematic diagram showing deposition of a fourth metal layer according to an embodiment of the present invention;

[0031] Figure 5A A schematic diagram showing etching a radio frequency chip mounting position on a micro-coaxial transmission layer according to one embodiment of the present invention is shown;

[0032] Figure 5B A schematic diagram of a micro-coaxial transmission layer after a radio frequency chip is installed according to an embodiment of the present invention is shown;

[0033] Figure 5C FIG2 shows a schematic diagram of forming a passivation layer on a micro-coaxial transmission layer according to one embodiment of the present invention;

[0034] Figure 5D FIG2 shows a schematic diagram of performing rewiring on a passivation layer according to an embodiment of the present invention;

[0035] Figure 5E FIG2 shows a schematic diagram of forming a copper pillar on a redistribution layer according to an embodiment of the present invention;

[0036] Figure 5F A schematic diagram of plastic-sealing a radio frequency unit according to an embodiment of the present invention is shown;

[0037] Figure 6 A schematic diagram illustrating providing a metal connection layer in a radio frequency unit according to an embodiment of the present invention is shown;

[0038] Figure 7 A schematic diagram of a radio frequency unit in which a chip is flip-chip mounted on a micro-coaxial transmission layer according to another embodiment of the present invention is shown;

[0039] Figure 8 FIG2 shows an example diagram of a radio frequency module application according to another embodiment of the present invention;

[0040] Description of reference numerals:

[0041] 1. Micro-coaxial transmission layer; 11. First micro-coaxial transmission line; 111. First signal transmission metal; 112. First shielding metal; 12. Second micro-coaxial transmission line; 121. Second signal transmission metal; 122. Second shielding metal; 13. Dielectric layer; 2. RF chip; 3. Plastic encapsulation layer; 31. First planting ball; 32. Second planting ball; 33. First conductor column; 34. Second conductor column; 4. Passivation layer; 41. First redistribution layer; 42. Second redistribution layer; 43. Third redistribution layer; 44. Fourth redistribution layer; 5. Connection metal layer; 6. Substrate. DETAILED DESCRIPTION

[0042] In order to make those skilled in the art to which this application belongs understand this application more clearly, the technical scheme of this application is described in detail below in conjunction with the accompanying drawings by way of specific embodiments. Throughout this specification, unless otherwise specified, the terms used herein should be understood to have the same meaning as commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which this invention belongs. In the event of a conflict, this specification takes precedence. Unless otherwise specified, the various devices used in the present invention, etc., can be purchased commercially or can be prepared by existing methods.

[0043] Further research shows that considering the signal transmission of multiple RF chips, the use of micro-coaxial structure is a good solution. However, the hollow structure of the micro-coaxial structure is not conducive to subsequent integration with other RF devices, and also brings inconvenience to subsequent packaging; and in some related technologies for the integration of micro-coaxial and other RF chips, the packaging method used for the RF module is not a commonly used packaging method for semiconductor technology in large-scale mass production, which also brings obstacles to subsequent use.

[0044] In order to solve the current technical problem of difficulty in integrating and packaging multiple radio frequency chips, the present invention provides a radio frequency module, the main structure of which is:

[0045] N radio frequency units connected in series and / or in parallel; wherein each of the radio frequency units comprises:

[0046] The micro-coaxial transmission layer includes a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line includes a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line includes a second signal transmission metal and a second shielding metal;

[0047] a radio frequency chip, electrically connected between the first signal transmission metal and the second signal transmission metal;

[0048] A plastic encapsulation layer is provided covering the micro-coaxial transmission layer; wherein a first implant ball is provided on the plastic encapsulation layer and is connected to the first signal transmission metal through a first conductor post; and a second implant ball is connected to the second signal transmission metal through a second conductor post.

[0049] The integration principle of the above-mentioned RF module is as follows: in each RF unit, the RF chip is connected between two micro-coaxial transmission lines, and the micro-coaxial transmission lines have good RF transmission performance. Electrical interconnection is carried out through the micro-coaxial transmission lines to realize signal transmission of the RF chip; multiple RF units are integrated together in parallel and / or series, and a plastic layer (Mold) is formed on the micro-coaxial transmission layer, and bumping is formed in the plastic layer to connect the micro-coaxial signal lines, thereby obtaining an integrated RF module with multiple RF chips and multiple functions. The RF module provided by the present invention effectively integrates multiple RF chips with different functions, and the RF module has a standard packaging form, that is, a fan-in packaging based on wafer-level packaging (WLP) technology, which is convenient for direct use.

[0050] The RF module provided by the present invention can have two different RF chip installation methods, one is to flip-chip the RF chip at the micro-coaxial transmission line, and the other is to flip-chip the RF chip at the plastic packaging layer, which are explained below respectively.

[0051] In an optional embodiment, the radio frequency module includes a plurality of radio frequency units connected in series and / or in parallel;

[0052] like Figure 1 As shown, each of the radio frequency units includes:

[0053] A micro-coaxial transmission layer 1 is formed on a substrate 6; it includes a first micro-coaxial transmission line 11 and a second micro-coaxial transmission line 12, wherein the first micro-coaxial transmission line 11 includes a first signal transmission metal 111 and a first shielding metal 112; the second micro-coaxial transmission line 12 includes a second signal transmission metal 121 and a second shielding metal 122;

[0054] A radio frequency chip 2 is provided in the micro-coaxial transmission layer 1 and electrically connected between the first signal transmission metal 111 and the second signal transmission metal 121;

[0055] A passivation layer 4 is provided on the micro-coaxial transmission layer 1; a first redistribution layer 41 is provided in the passivation layer 4, connected between the first conductor post 33 and the first signal transmission metal 111; a second redistribution layer 42 is connected between the second conductor post 34 and the second signal transmission metal 121;

[0056] The plastic encapsulation layer 3 is covered on the passivation layer 4 . A first implant ball 31 is provided on the plastic encapsulation layer 3 and is connected to the first conductor post 33 . A second implant ball 32 is connected to the second conductor post 34 .

[0057] It should be noted that, in addition to the redistribution layer, conductor column and planting ball at the signal transmission metal, corresponding redistribution layer, conductor column and planting ball can also be set at the shielding metal. Figure 1 The black area in the figure) leads out the signal transmission metal or shielding metal, which can flexibly adjust the connection mode of the RF module. The conductor column can be a good conductor column such as a copper column or a silver column. In addition, the RF chip 2 is also electrically connected between the first shielding metal 112 and the second shielding metal 122 through a pin ( Figure 1 not shown).

[0058] The following is a further explanation of the above structure:

[0059] Figure 2 and Figure 3 FIG. 1 shows a schematic diagram of the micro-coaxial transmission line in this embodiment. Figure 3As shown, the micro-coaxial mainly includes a shielding metal on the periphery and a signal transmission metal in the middle. Different from the traditional micro-coaxial transmission line: the structure of the hollow inside the shielding metal, the micro-coaxial transmission layer 1 of this embodiment is filled with a dielectric layer 13 between the shielding metal and the signal transmission metal, between the two micro-coaxial transmission lines, and between the micro-coaxial transmission line and the RF chip. The reason for retaining the dielectric layer 13 is to facilitate the formation of a passivation layer 4 and rewiring and ball implantation structures on the micro-coaxial transmission layer 1 of multiple RF units, thereby preparing an RF module integrating multiple RF chips. The dielectric layer 13 can use materials with low dielectric loss, including but not limited to organic materials that can be photolithographic, such as benzocyclobutene (BCB), epoxy resin (such as SU-8), polyimide (PI), etc.

[0060] Take BCB as an example, Figures 4A to 4E The fabrication process of the micro-coaxial transmission line is shown:

[0061] 1) Spin coating dielectric material: benzocyclobutene (BCB) on the substrate;

[0062] 2) After spin coating, exposure and development are performed to expose the metal-filled area (such as Figure 4A );

[0063] 3) Filling metal, metal materials include but are not limited to copper, gold, aluminum, etc., and then use chemical mechanical polishing to grind the surface (such as Figure 4B );

[0064] 4) Using the same method, deposit and pattern the second layer of metal (such as Figure 4C );

[0065] 5) Using the same method, deposit and pattern the third metal layer (such as Figure 4D ), the fourth layer (such as Figure 4E ), the fifth layer of metal (such as Figure 3 ).

[0066] The above structure is a five-layer micro-coaxial structure. More layers of metal can be deposited according to actual needs or process capabilities. The outer shielding layer metal and the intermediate signal transmission metal can be made in any layer according to actual conditions.

[0067] like Figure 3 As shown, an interface region is provided between the two micro-coaxial transmission lines, and the interface region is used to connect to the RF chip 2. In the interface region, the signal transmission metal of the micro-coaxial transmission line extends downward and outward, and the shielding metal also extends downward to cover the signal transmission metal in the interface region, thereby reducing signal loss in the interface region.

[0068] Any type of RF chip 2 can be installed in the micro-coaxial transmission layer 1 in each of the RF units. The RF chip 2 includes but is not limited to a power amplifier (PA), a low-noise amplifier (LNA), a filter, a duplexer, an RF switch, etc. Each RF chip 2 transmits signals through a micro-coaxial transmission line.

[0069] During integration, the RF module can adopt the fan-in packaging in wafer-level packaging (WLP), as follows:

[0070] 1) Prepare a micro-coaxial transmission layer 1 on a substrate 6, and then etch an area on the micro-coaxial transmission layer 1 that can accommodate other radio frequency chips 2 (such as Figure 5A As shown); the substrate 6 may be a silicon substrate;

[0071] 2) Connect the RF chip 2 (such as PA) to the micro coaxial structure (such as Figure 5B As shown), the connection method can be selected according to the characteristics of different chips;

[0072] 3) Deposit a passivation layer 4 on the micro-coaxial transmission layer 1, and then etch away part of the passivation material by wet etching or dry etching to expose the metal of the micro-coaxial (such as Figure 5C shown);

[0073] The passivation layer 4 includes but is not limited to organic materials: benzocyclobutene (BCB), polyimide (PI), etc., and then the micro-coaxial is exposed by exposure and development; the passivation layer 4 can also be an inorganic material, such as silicon dioxide (SiO2), silicon nitride (Si3N4), etc.

[0074] 4) Rewiring the exposed part of the micro coaxial line (RDL) to form a first redistribution layer 41 and a second redistribution layer 42, thereby leading out the signal transmission metal of the micro coaxial transmission line away from the RF chip 2 (such as Figure 5D As shown); a redistribution layer is also formed simultaneously at the shielding metal;

[0075] 5) Forming copper pillars on the redistribution layer by metal deposition method, such as Figure 5E As shown;

[0076] 6) Use epoxy resin to form a plastic layer 3, and polish to expose the copper column, such as Figure 5F As shown;

[0077] 7) Then, through the Ballplace ball planting process, a bumping or solder ball is formed on the copper pillar, such as Figure 1 The ball planting process specifically includes: forming a passivation layer on the plastic packaging layer ( Figure 1(not shown), and perform under bump metallization (UBM) on the passivation layer, and then form solder balls at the metallized positions.

[0078] Considering that multiple RF chips 2 are integrated on the RF module, the heat density is large. Therefore, in some optional embodiments, in order to increase the heat dissipation capacity of the chip, such as Figure 6 As shown, the RF module further includes a connecting metal layer 5 , which is arranged between the RF chip 2 and the plastic packaging layer 3 ; one end of the connecting metal layer 5 is connected to the first shielding metal 112 , and the other end is connected to the second shielding metal 122 .

[0079] Specifically, the setting of the connection metal layer 5 enables the RF chip 2 to have a larger area of ground connection. The electrical connection between the back of the RF chip 2 and the shielding metal of the micro-coaxial transmission line can improve the heat dissipation capacity of the RF chip 2, reduce the operating temperature of the RF module, and ensure the long-term stable operation of the RF chip 2.

[0080] The method for forming the connection metal layer 5 is as follows: the passivation layer 4 can be made and patterned before metal deposition, and after the connection metal layer 5 and the redistribution layer are formed, ball planting and plastic packaging are performed.

[0081] The above embodiment shows an implementation method of flip-chip mounting the chip on the micro-coaxial connection layer. In another optional embodiment, as shown in FIG. Figure 7 As shown, a radio frequency module is provided, comprising a plurality of radio frequency units connected in series and / or in parallel; Figure 1 As shown, each of the radio frequency units includes:

[0082] A micro-coaxial transmission layer 1 is formed on a substrate 6; it includes a first micro-coaxial transmission line 11 and a second micro-coaxial transmission line 12, wherein the first micro-coaxial transmission line 11 includes a first signal transmission metal 111 and a first shielding metal 112; the second micro-coaxial transmission line 12 includes a second signal transmission metal 121 and a second shielding metal 122;

[0083] A passivation layer 4 is provided on the micro-coaxial transmission layer 1; a first redistribution layer 41 is provided in the passivation layer 4, connecting the first end of the first signal transmission metal 111 and the first conductor post 33; a second redistribution layer 42 is connected between the first end of the second signal transmission metal 121 and the second conductor post 34;

[0084] The plastic encapsulation layer 3 is covered on the passivation layer 4; wherein the plastic encapsulation layer 3 is provided with a first planting ball 31 connected to the first conductor post 33; and a second planting ball 32 connected to the second conductor post 34;

[0085] The RF chip 2 is disposed within the plastic packaging layer 3 and is connected to the second end of the first signal transmission metal 111 through the third redistribution layer 43 and to the second end of the second signal transmission metal 121 through the fourth redistribution layer 44 .

[0086] Similarly, in addition to the redistribution layer, conductor column and planting ball at the signal transmission metal, corresponding redistribution layer, conductor column and planting ball can also be set at the shielding metal. By leading out the signal transmission metal or shielding metal through the redistribution layer, the connection method of the RF module can be adjusted more flexibly. The conductor column can be a good conductor column such as a copper column, a silver column, etc. In addition, the RF chip 2 is also electrically connected to the first shielding metal 112 and the second shielding metal 122 ( Figure 7 not shown).

[0087] In order to realize the radio frequency module of this embodiment, it is necessary to adjust the signal transmission metal of the micro coaxial transmission line. Figure 7 As shown, the first signal transmission metal 111 and the second signal transmission metal 121 extend upward to the passivation layer 4 in the interface area. The passivation layer 4 is opened here, and the first signal transmission metal 111 is led out through the third redistribution layer 43, and the second signal transmission metal 121 is led out through the fourth redistribution layer 44 to connect to the RF chip 2.

[0088] The radio frequency module provided in this embodiment is prepared by:

[0089] 1) preparing a micro-coaxial transmission layer 1 on a substrate 6, where the substrate 6 may be a silicon substrate;

[0090] 2) A passivation layer 4 is formed on the micro-coaxial transmission layer 1, and a third redistribution layer 43 connected to the first signal transmission metal 111 and a fourth redistribution layer 44 connected to the second signal transmission metal 121 are formed on the passivation layer 4 at the interface region. A first redistribution layer 41 connected to the first signal transmission metal 111 and a second redistribution layer 42 connected to the second signal transmission metal 121 are formed on the passivation layer 4 away from the interface region. A redistribution layer connected to the shielding metal is also formed simultaneously.

[0091] 3) Connecting the RF chip 2 to the third redistribution layer 43 and the fourth redistribution layer 44 in a flip-chip manner;

[0092] 4) forming copper pillars on all redistribution layers by metal deposition;

[0093] 5) Depositing epoxy resin on the passivation layer 4 for plastic sealing to form a plastic sealing layer 3, and exposing all copper pillars by polishing;

[0094] 6) Forming solder balls or solder balls on all copper pillars.

[0095] Based on the inventive concept of the aforementioned embodiment, in yet another optional embodiment, a radio frequency device is provided, which includes the radio frequency module of the aforementioned embodiment.

[0096] Figure 8 An example of a radio frequency device structure using the radio frequency module provided by the present invention is shown. Figure 8 RF devices use a variety of RF chips, such as switches, filters, duplexers, power amplifiers (PAs), and low-noise amplifiers (LNAs). Each RF chip is packaged in a RF unit, and multiple RF units are packaged together in series and parallel to form a multifunctional RF module.

[0097] Through one or more embodiments of the present invention, the present invention has the following beneficial effects or advantages:

[0098] The present invention provides a radio frequency module, comprising a plurality of radio frequency units; in each radio frequency unit, a radio frequency chip is connected between two micro-coaxial transmission lines, and the micro-coaxial transmission lines have good radio frequency transmission performance, and are electrically interconnected through the micro-coaxial transmission lines to achieve signal transmission of the radio frequency chip; the plurality of radio frequency units are integrated together in parallel and / or series, and a plastic encapsulation layer is formed on the micro-coaxial transmission layer, and implant balls connected to the micro-coaxial signal lines are formed in the plastic encapsulation layer, thereby obtaining a radio frequency module that integrates multiple radio frequency chips and has multiple functions. The radio frequency module provided by the present invention effectively integrates multiple radio frequency chips with different functions, and the radio frequency module has a standard packaging form, which is convenient and direct to use.

[0099] Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present application.

[0100] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A radio frequency module, characterized in that: The radio frequency module comprises: N radio frequency units connected in series and / or in parallel; Each of the radio frequency units includes: The micro-coaxial transmission layer includes a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line includes a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line includes a second signal transmission metal and a second shielding metal; a radio frequency chip, electrically connected between the first signal transmission metal and the second signal transmission metal; A plastic encapsulation layer is provided covering the micro-coaxial transmission layer; wherein a first planting ball is provided on the plastic encapsulation layer and is connected to the first signal transmission metal through a first conductor post; and a second planting ball is connected to the second signal transmission metal through a second conductor post; A passivation layer is provided between the micro-coaxial transmission layer and the plastic packaging layer; The passivation layer includes a first redistribution layer disposed between the first conductor post and the first signal transmission metal; and a second redistribution layer disposed between the second conductor post and the second signal transmission metal.

2. The radio frequency module according to claim 1, wherein: The radio frequency chip is disposed in the micro-coaxial transmission layer and is electrically connected between the first signal transmission metal and the second signal transmission metal.

3. The radio frequency module according to claim 2, wherein: Also includes: A connecting metal layer is provided between the radio frequency chip and the plastic packaging layer; one end of the connecting metal layer is connected to the first shielding metal, and the other end is connected to the second shielding metal.

4. The radio frequency module according to claim 1, wherein: The radio frequency chip is arranged in the plastic packaging layer, and is connected to the first signal transmission metal through a third redistribution layer, and is connected to the second signal transmission metal through a fourth redistribution layer.

5. The radio frequency module according to claim 1, wherein: The passivation layer is made of insulating organic material or insulating inorganic material.

6. The radio frequency module according to claim 1, wherein: A dielectric layer is filled between the first signal transmission metal and the first shielding metal.

7. The radio frequency module according to claim 1, wherein: The radio frequency chip is any one of a power amplifier, a low noise amplifier, a filter, a duplexer, and a radio frequency switch.

8. The radio frequency module according to claim 1, wherein: A substrate is also included, and the micro-coaxial transmission layer is formed on the substrate.

9. A radio frequency device, characterized in that: Comprising a radio frequency module as described in any one of claims 1 to 8.

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