A radio frequency semiconductor device structure and manufacturing method thereof

Abstract

The present invention relates to a radio frequency semiconductor device structure and a method for manufacturing the same. The radio frequency semiconductor device structure includes: a substrate, a first surface of the substrate being a semiconductor layer; a first radio frequency component located on the semiconductor layer; a dielectric layer located on the semiconductor layer and covering the first radio frequency component; a first microwave absorption layer disposed above the first radio frequency component; and / or a second microwave absorption layer disposed below the first radio frequency component; and / or a third microwave absorption layer disposed between adjacent first radio frequency components. The first, second, and third microwave absorption layers of the present invention can absorb electromagnetic waves generated by radio frequency components, thereby reducing electromagnetic coupling between radio frequency components or between radio frequency components and semiconductor substrates.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device manufacturing, and in particular to a radio frequency semiconductor device structure and a manufacturing method thereof. Background Art

[0002] Integrated devices are typically formed on a wafer-like substrate, which primarily serves as a support for manufacturing the device. The top surface and periphery of the integrated device are encased in dielectric layers to isolate the micro-device units and interconnects that comprise the integrated device. With the increasing integration of semiconductor devices, particularly RF devices, which process signals with frequencies between approximately 3 kHz and 300 GHz and are particularly used in the telecommunications field, the impact of electromagnetic coupling between RF devices and substrates, between adjacent RF devices, and between RF devices and other devices or interconnects on device performance becomes increasingly pronounced as frequency increases.

[0003] Therefore, how to reduce the electromagnetic coupling of RF devices is the main problem currently faced. Summary of the Invention

[0004] An object of the present invention is to provide a semiconductor device structure and a manufacturing method thereof, which can solve the problem of electromagnetic coupling between radio frequency devices or between a radio frequency device and a substrate.

[0005] In order to achieve the above object, the present invention provides a radio frequency semiconductor device structure, comprising:

[0006] A substrate, wherein a first surface of the substrate is a semiconductor layer; a first radio frequency component is located in the semiconductor layer;

[0007] a dielectric layer, located on the semiconductor layer and covering the first radio frequency component;

[0008] The first microwave absorbing layer is arranged above the first radio frequency element; and / or the second microwave absorbing layer is arranged below the first radio frequency element; and / or the third microwave absorbing layer is arranged between adjacent first radio frequency elements.

[0009] The present invention also provides a method for manufacturing a radio frequency semiconductor device structure, comprising:

[0010] Providing a substrate, wherein a first surface of the substrate is a semiconductor layer;

[0011] forming a first radio frequency component on the semiconductor layer;

[0012] forming a first dielectric layer, and forming a first interconnect structure in the first dielectric layer to connect the first radio frequency component;

[0013] forming a second dielectric layer on the first dielectric layer and a first microwave absorbing layer located in the second dielectric layer;

[0014] and / or, forming a second microwave absorbing layer on the substrate layer;

[0015] And / or, a third microwave absorbing layer is formed between adjacent first radio frequency components.

[0016] The beneficial effects of the present invention are:

[0017] A first microwave absorbing layer is arranged above the first RF element, and / or a second microwave absorbing layer is arranged below the first RF element, and / or a third microwave absorbing layer is arranged between the first RF elements. The first / second / third microwave absorbing layers can absorb electromagnetic waves generated by the first RF element from different directions, thereby reducing electromagnetic coupling between the first RF element and other electronic devices or semiconductor materials.

[0018] Furthermore, the first microwave absorbing layer is located between the first RF component and the second RF component, which can reduce electromagnetic coupling between the first RF component and the second RF component.

[0019] Furthermore, the substrate layer is made of semiconductor material, and a second microwave absorption layer is set in the substrate layer, or a second microwave absorption layer is set on the back of the substrate layer, which can reduce the electromagnetic coupling between the first RF element and the substrate layer, reduce electromagnetic wave radiation, and reduce power loss.

[0020] Furthermore, the projection of the first / second microwave absorbing layer on the surface of the substrate layer surrounds the projection of the first RF element on the surface of the substrate layer, which can further reduce the electromagnetic coupling between the first RF element and other electronic devices or semiconductor materials.

[0021] Furthermore, the first / second / third microwave absorbing layer can be a single layer or a multi-layer. When it is a multi-layer, a better microwave absorbing effect can be achieved. When it is a single layer, the manufacturing process is convenient. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 A schematic diagram showing the structure of a radio frequency semiconductor device according to embodiment 1 of the present invention is shown.

[0024] Figures 2 to 8Schematic diagrams of structures corresponding to different steps of a method for manufacturing a radio frequency semiconductor device structure according to embodiment 2 of the present invention are shown.

[0025] Description of reference numerals:

[0026] 20-substrate layer; 21-insulating layer; 22-semiconductor layer; 10-1-first RF element; 10-2-second RF element; 23-dielectric layer; 23-1-first dielectric layer; 23-2-second dielectric layer; 23-3-third dielectric layer; 24-first interconnect structure; 25-first groove; 30-1-first microwave absorption layer; 30-2-second microwave absorption layer; 30-3-third microwave absorption layer; 40-shallow trench isolation structure; 41-insulating medium. DETAILED DESCRIPTION

[0027] The following is a further detailed description of the radio frequency semiconductor device structure and its manufacturing method of the present invention in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings. However, it should be noted that the technical solution of the present invention can be implemented in a variety of different forms and is not limited to the specific embodiments described herein. The drawings are all in a very simplified form and are not to exact scale. They are only used to facilitate and clearly illustrate the purpose of the embodiments of the present invention.

[0028] The terms "first", "second", etc. in the specification and claims are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological sequence. It is to be understood that, where appropriate, these terms used in this manner are interchangeable, for example, to enable the embodiments of the invention described herein to operate in an order other than that described or shown herein. Similarly, if the method described herein comprises a series of steps, the order in which the steps are presented herein is not necessarily the only order in which the steps can be performed, and some of the steps described may be omitted and / or some other steps not described herein may be added to the method. If a component in a particular figure is the same as a component in other figures, although these components can be easily identified in all figures, in order to make the description of the figures clearer, this specification will not mark all the same component numbers in each figure.

[0029] Example 1

[0030] Embodiment 1 of the present invention provides a radio frequency semiconductor device structure, Figure 1 This is a schematic diagram of the structure of the radio frequency semiconductor device according to embodiment 1 of the present invention. Figure 1 , the radio frequency semiconductor device structure includes:

[0031] A substrate, wherein a first surface of the substrate is a semiconductor layer 22;

[0032] A first RF element 10 - 1 is located in the semiconductor layer 22 ;

[0033] a dielectric layer 23, located on the semiconductor layer 22 and covering the first RF element 10-1;

[0034] The first microwave absorption layer 30-1 is arranged above the first RF element 10-1; and / or the second microwave absorption layer 30-2 is arranged below the first RF element 10-1; and / or the third microwave absorption layer 30-3 is arranged between adjacent first RF elements 10-1.

[0035] The first microwave absorbing layer can block the electromagnetic coupling between the device and other devices on top of it and the interconnection lines; the second microwave absorbing layer can block the electromagnetic coupling between the device and the semiconductor substrate; and the third microwave absorbing layer can block the electromagnetic coupling between devices.

[0036] In this embodiment, the substrate comprises, from bottom to top, a stacked substrate layer 20, an insulating layer 21, and the semiconductor layer 22, such as an SOI substrate. Specifically, the substrate layer 20 is made of silicon, the insulating layer 21 is made of silicon oxide, and the semiconductor layer 22 is also made of silicon, specifically single crystal silicon. In other embodiments, the substrate layer 20 or the semiconductor layer 22 may be made of other semiconductor materials, such as germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III / V compound semiconductors. The substrate layer 20 may also be a non-semiconductor material, such as a ceramic substrate made of aluminum oxide, a quartz substrate, or a glass substrate. The insulating layer 21 may also be made of other insulating materials commonly used in semiconductor processes, such as silicon nitride or silicon oxynitride. In other embodiments, the substrate may have other structures, such as a semiconductor layer on the first surface and a dielectric layer below the first surface.

[0037] In this embodiment, the substrate layer 20 is made of P-type silicon with a resistance greater than 10 KOhm.cm. The reason for choosing a high resistance is that when AC current flows through the first RF element 10-1 above the substrate layer 20, the AC current generates electromagnetic waves, which radiate and lose some electrical energy. At low frequencies, this radiation loss is minimal, but at high frequencies, this radiation loss increases. Using a high-resistance material can reduce electromagnetic radiation and thus electrical energy loss.

[0038] A first RF component 10-1 is formed in the semiconductor layer 22. In this embodiment, the lower half of the first RF component 10-1 is located in the semiconductor layer 22, while the upper half of the first RF component 10-1 is located in the dielectric layer 23. Specifically, the dielectric layer 23 is located above the semiconductor layer 22, covering the first RF component 10-1. In another embodiment, the first RF component may be entirely located in the semiconductor layer. The material of the dielectric layer 23 includes one or a combination of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), and aluminum nitride (AlN). The first RF component 10-1 comprises at least one of a diode, a transistor, and a MOS transistor. In this embodiment, the first RF component 10-1 is a MOS transistor, with the source and drain electrodes located in the semiconductor layer 22 and the gate electrode located in the dielectric layer 23 above the semiconductor layer 22. In this embodiment, the first RF component 10-1 also includes a first interconnect structure 24 connecting the source, drain, and gate electrodes, respectively.

[0039] refer to Figure 1 In this embodiment, the RF semiconductor device structure includes a first microwave absorbing layer 30-1 disposed above the first RF component 10-1, specifically located in the dielectric layer 23. It also includes a second microwave absorbing layer 30-2 disposed below the first RF component 10-1, specifically located in the substrate layer 20. In other embodiments, the second microwave absorbing layer 30-1 may also be located in the insulating layer 21, or on the back surface of the substrate layer 20, or the substrate layer 20 may serve as the second microwave absorbing layer. It should be understood that the first microwave absorbing layer 30-1 and the second microwave absorbing layer 30-2 are respectively located above and below the first RF component 10-1 to absorb electromagnetic waves generated by the first RF component 10-1. There is no specific restriction on the specific layer in which they are located. If other structural layers are formed above or below the first RF component 10-1, the first microwave absorbing layer 30-1 and the second microwave absorbing layer 30-2 may also be disposed in the corresponding structural layers.

[0040] In this embodiment, to better absorb electromagnetic waves, the projections of the first microwave absorbing layer 30-1 and the second microwave absorbing layer 30-2 on the surface of the substrate layer 20 surround the projection of the first RF device 10-1 on the surface of the substrate layer. In other embodiments, the projection of the first RF device 10-1 may not completely surround the projection of the first or second microwave absorbing layer, and the first microwave absorbing layer or the second microwave absorbing layer may be disposed in an area where the first RF device 10-1 generates a high number of electromagnetic waves.

[0041] Providing a second microwave absorption layer 30-2 in the substrate layer 20 or on the back of the substrate layer can cut off the electromagnetic coupling between the first RF element 10-1 and the substrate layer 20, reduce electromagnetic wave radiation, and reduce power loss.

[0042] In this embodiment, a shallow trench isolation structure is provided between adjacent first RF components (MOS transistors in this embodiment, but other transistors may also be used). The third microwave absorbing layer 30-3 is disposed within the shallow trench isolation structure. The shallow trench isolation structure is located within the semiconductor layer 22 and includes a trench, an insulating dielectric 41 located within the trench, and the third microwave absorbing layer 30-3 embedded within the insulating dielectric 41. The third microwave absorbing layer 30-3 may be surrounded by the insulating dielectric 41 on all sides. The upper surface of the third microwave absorbing layer 30-3 may also be covered by another dielectric layer instead of the insulating dielectric 41. Figure 1 Two MOS transistor structures are shown, with a shallow trench isolation structure provided between adjacent MOS transistor structures. The shallow trench isolation structure between the two MOS transistors is equipped with two third microwave absorption layers 30-3. A third microwave absorption layer 30-3 is provided outside the source and drain of each MOS transistor. In other embodiments, a third microwave absorption layer 30-3 can be provided between two first RF components. Horizontally, the third microwave absorption layer 30-3 is provided between two adjacent first RF components 10-1 to isolate electromagnetic coupling between the adjacent first RF components 10-1.

[0043] In this embodiment, the RF semiconductor device structure further includes a second RF element 10-2 located above the first RF element 10-1 and within the dielectric layer 23. The first microwave absorbing layer 30-1 is located between the first and second RF elements 10-1, 10-2. The second RF element 10-2 includes at least one of a capacitor, an inductor, and a resistor. The first microwave absorbing layer 30-1 is disposed between the first and second RF elements 10-1, 10-2 to isolate electromagnetic coupling between the first and second RF elements 10-1, 10-2.

[0044] The material of the first microwave absorbing layer 30-1, the second microwave absorbing layer 30-2, or the third microwave absorbing layer 30-3 includes a thermoplastic resin and electromagnetic wave absorbing particles distributed within the thermoplastic resin. In this embodiment, the thermoplastic resin includes polyurethane acrylic resin, polyimide resin, polybenzoxazole resin, or benzocyclobutene resin. The electromagnetic wave absorbing particles include porous glassy carbon spheres, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, a mixture of carbon and metal particles, silicon carbide-carbon, hollow ferroferric oxide spheres, and a mixture of graphene-carbonyl iron powder and ferroferric oxide particles. The metal particles in the mixture of carbon and metal particles include at least one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles, and Fe particles, or any combination thereof.

[0045] The first microwave absorbing layer 30-1 is a single layer; or, it is at least two layers, with two adjacent first microwave absorbing layers 30-1 in contact or spaced apart from each other, and the materials of each first microwave absorbing layer are the same or different. And / or, the second microwave absorbing layer 30-2 is a single layer; or, it is at least two layers, with two adjacent second microwave absorbing layers in contact or spaced apart from each other, and the materials of each second microwave absorbing layer are the same or different. And / or, the third microwave absorbing layer 30-3 is a single layer; or, it is at least two layers, with two adjacent third microwave absorbing layers in contact or spaced apart from each other, and the materials of each third microwave absorbing layer are the same or different. The total thickness of the first microwave absorbing layer 30-1 and / or the second microwave absorbing layer 30-2 is 0.5 micrometers to 50 micrometers, such as 1 micrometer, 10 micrometers, 20 micrometers, etc.

[0046] The electromagnetic waves absorbed by the first microwave absorbing layer 30 - 1 and / or the second microwave absorbing layer 30 - 2 and / or the third microwave absorbing layer 30 - 3 have a frequency range of 300 kHz to 300 GHz, such as 1 MHz, 100 MHz, 1 GHz, etc.

[0047] Example 2

[0048] Embodiment 2 of the present invention provides a method for manufacturing a radio frequency semiconductor device structure, comprising:

[0049] S01: providing a substrate, wherein a first surface of the substrate is a semiconductor layer;

[0050] S02: forming a first radio frequency component on the semiconductor layer;

[0051] S03: forming a first dielectric layer, and forming a first interconnect structure in the first dielectric layer to connect the first radio frequency component;

[0052] S04: forming a second dielectric layer and a first microwave absorbing layer in the second dielectric layer on the first dielectric layer; and / or forming a second microwave absorbing layer on the substrate layer; and / or forming a third microwave absorbing layer between adjacent first radio frequency elements.

[0053] Steps S0N do not represent a sequential order.

[0054] Please refer to the following Figures 2 to 8 The manufacturing method of the radio frequency semiconductor device structure is described. Figures 2 to 8 It is a structural schematic diagram corresponding to each step of the manufacturing method of the radio frequency semiconductor device structure in this embodiment.

[0055] refer to Figure 2 In this embodiment, the substrate includes, from bottom to top, a stacked substrate layer 20, an insulating layer 21, and the semiconductor layer 22. In this embodiment, the substrate is specifically an SOI substrate, i.e., the substrate layer 20 is made of silicon, the insulating layer 21 is made of silicon oxide, and the semiconductor layer 22 is also made of silicon, specifically single-crystalline silicon. In other embodiments, the materials of the substrate layer 20, insulating layer 21, and semiconductor layer 22 refer to the relevant description in Example 1 and are not repeated here.

[0056] refer to Figure 3 This embodiment further includes forming a second microwave absorbing layer 30-2 within the substrate layer 20. This formation method includes: coating a second microwave absorbing material layer on the back surface of the substrate layer 20, curing the second microwave absorbing material layer by light irradiation or heat, and forming the second microwave absorbing layer 30-2. Alternatively, a second recess is formed on the back surface of the substrate layer 20, and a second microwave absorbing material layer is coated to fill the recess. The second microwave absorbing material layer outside the recess is removed, and the remaining second microwave absorbing material layer within the recess serves as the second microwave absorbing layer 30-2. The second microwave absorbing layer 30-2 can be exposed on the back surface of the substrate layer 20. Alternatively, after forming the second microwave absorbing layer 30-2, a layer of material consistent with the substrate layer 20 can be formed on the back surface of the substrate layer 20 and on the surface of the second microwave absorbing layer 30-2 to cover the second microwave absorbing layer 30-2.

[0057] The materials for the second microwave absorbing material layer refer to those in Example 1 and are not further described here. Depending on the material used, the second microwave absorbing material layer is cured into a sheet using a corresponding process. For example, the second microwave absorbing material layer can be cured by irradiation with light or heat. Once the second microwave absorbing material layer is formed in the second groove, before or after curing, the second microwave absorbing material layer outside the second groove is removed, leaving the remaining second microwave absorbing material layer in the second groove as the second microwave absorbing layer 30-2. The second groove can be formed on the back surface of the substrate layer 20 using a dry etching process.

[0058] refer to Figure 4 A first RF element 10-1 is formed on the semiconductor layer 22. In this embodiment, the first RF element 10-1 is a MOS transistor. The source and drain of the MOS transistor are formed in the semiconductor layer 22, and the gate of the MOS transistor is formed above the surface of the semiconductor layer 22. In other embodiments, the first RF element may also be a diode or a transistor.

[0059] In this embodiment, before forming the MOS transistors, a shallow trench isolation structure is first formed in the semiconductor layer 22 to electrically isolate two adjacent MOS transistors. The shallow trench isolation structure includes a trench and an insulating dielectric 41 located within the trench. In this embodiment, a third microwave absorbing layer 30-3 is formed within the insulating dielectric 41. The third microwave absorbing layer 30-3 may be surrounded by the insulating dielectric 41. In this embodiment, the upper surface of the third microwave absorbing layer 30-3 is not covered by the insulating dielectric 41. When the first dielectric layer is subsequently formed, the first dielectric layer covers the upper surface of the third microwave absorbing layer. In this embodiment, the third microwave absorbing layer is formed within the shallow trench isolation structure by forming a trench in the semiconductor layer through an etching process, forming an oxide layer on the bottom and sidewalls of the trench by thermal oxidation or deposition, wherein the oxide layer does not completely fill the trench. The third microwave absorbing layer is then filled into the trench where the oxide layer has been formed. In another embodiment, a method for forming a third microwave absorbing layer in a shallow trench isolation structure is as follows: forming a trench in a semiconductor layer through an etching process, filling the trench with an insulating material, forming a recess in the insulating material, forming a third microwave absorbing layer in the recess, and then forming an insulating material on the third microwave absorbing layer to cover the third microwave absorbing layer. The insulating material wraps the third microwave absorbing layer, and the insulating material constitutes an insulating medium. The upper surface of the insulating medium is flush with the upper surface of the semiconductor layer.

[0060] refer to Figure 5 A first dielectric layer 23 - 1 is formed on the semiconductor layer 22 and the first RF component 10 - 1 , and a first interconnect structure 24 is formed in the first dielectric layer 23 - 1 to connect the first RF component 10 - 1 .

[0061] First, a first dielectric layer 23-1 is formed by physical vapor deposition or chemical vapor deposition to cover the semiconductor layer 22 and the first RF element 10-1. The material of the first dielectric layer 23-1 includes one or more combinations of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), and aluminum nitride (AlN). Then, through-holes are formed above the corresponding regions of the source, drain, and gate of the MOS tube, penetrating the first dielectric layer 23-1 and separated from each other. The through-holes can be formed by a dry etching process, which includes but is not limited to reactive ion etching (RIE), ion beam etching, and plasma etching. The source, drain, and gate are exposed at the bottom of the through-hole, and a conductive material is formed in the through-hole and the peripheral area of ​​the through-hole. The conductive material is patterned to form a first interconnect structure 24. The conductive material is made of one of the metals such as molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd), etc., or is made of a stack of the above metals.

[0062] refer to Figure 6 and Figure 7 A second dielectric layer and a first microwave absorbing layer 30 - 1 located in the second dielectric layer are formed on the first dielectric layer 23 - 1 .

[0063] In this embodiment, the steps of forming the second dielectric layer 23-2 and the first microwave absorbing layer 30-1 located in the second dielectric layer 23-2 on the first dielectric layer 23-1 include: forming the second dielectric layer 23-2 having a first groove 25; coating a first microwave absorbing material layer to fill the first groove 25 and cover the second dielectric layer 23-2; curing the first microwave absorbing material layer 30-1 by light irradiation or heating; and removing the first microwave absorbing material layer located outside the first groove 25, with the remaining first microwave absorbing material layer in the first groove 25 serving as the first microwave absorbing layer 30-1.

[0064] refer to Figure 6 The second dielectric layer 23-2 having the first groove 25 is formed by depositing a dielectric material to cover the first dielectric layer 23-1 and the first interconnect structure, and then dry-etching the dielectric material to form the first groove 25. The first groove 25 is located above the first interconnect structure and the first RF component 10-1. In this embodiment, to better absorb electromagnetic waves, the projection of the first groove 25 on the surface of the substrate layer 20 surrounds the projection of the first RF component 10-1 on the surface of the substrate layer 20. The material of the second dielectric layer 23-2 is similar to that of the first dielectric layer 23-1.

[0065] refer to Figure 7A first microwave absorbing material layer is applied to fill the first groove and cover the second dielectric layer. The material for the first microwave absorbing material layer is as described in Example 1 and is not further described here. Depending on the material of the first microwave absorbing material layer, a corresponding process is used to cure the first microwave absorbing material layer into a sheet. For example, the first microwave absorbing material layer may be cured by light irradiation or heat. Before or after curing the first microwave absorbing material layer, the first microwave absorbing material layer located outside the first groove is removed, leaving the first microwave absorbing material layer in the first groove as the first microwave absorbing layer 30-1.

[0066] refer to Figure 8 This embodiment further includes a third dielectric layer 23-3 formed on the second dielectric layer 23-2 and a second RF component 10-2 located in the third dielectric layer. The second RF component 10-2 includes at least one of a capacitor, an inductor, and a resistor. The second RF component 10-2 is located above the first microwave absorbing layer 30-1. The first microwave absorbing layer 30-1 can reduce electromagnetic coupling between the first RF component 10-1 and the second RF component 10-2.

[0067] The first microwave absorbing layer 30-1, the second microwave absorbing layer 30-2, or the third microwave absorbing layer 30-3 can be a single layer or multiple layers. In the case of multiple layers, each layer is formed stepwise. The multilayer structure can achieve better microwave absorption. In the case of a single layer, the manufacturing process is more convenient. The thickness of the first microwave absorbing layer 30-1, the second microwave absorbing layer 30-2, or the third microwave absorbing layer 30-3 is 0.5 microns to 50 microns, such as 2 microns, 8 microns, 30 microns, etc.

[0068] It should be noted that the various embodiments in this specification are described in a related manner. Similar portions between the various embodiments can be referred to in conjunction with each other. Each embodiment focuses on the differences between the other embodiments. In particular, the method embodiments are generally similar to the structural embodiments, so their description is relatively simple. For related portions, refer to the description of the structural embodiments.

[0069] The above description is only a description of the preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A radio frequency semiconductor device structure, characterized in that: include: a substrate, wherein a first surface of the substrate is a semiconductor layer; A first radio frequency element is located in the semiconductor layer; a dielectric layer, located on the semiconductor layer and covering the first radio frequency component; a first microwave absorbing layer, disposed above the first radio frequency component; a second microwave absorbing layer, disposed below the first radio frequency element; a third microwave absorbing layer, disposed between adjacent first radio frequency components; The substrate comprises, from bottom to top, a substrate layer, an insulating layer and the semiconductor layer stacked in sequence; A shallow trench isolation structure is provided between adjacent first radio frequency components, and the third microwave absorbing layer is provided in the shallow trench isolation structure; The shallow trench isolation structure is located in the semiconductor layer and includes: a trench, an insulating medium located in the trench, and the third microwave absorbing layer is embedded in the insulating medium; The first microwave absorbing layer is located in the dielectric layer; The second microwave absorbing layer is located in the insulating layer, or in the substrate layer or on the back of the substrate layer, or the substrate layer is the second microwave absorbing layer; A projection of the first microwave absorbing layer or the second microwave absorbing layer in the direction of the surface of the substrate layer surrounds a projection of the first radio frequency component in the direction of the surface of the substrate layer.

2. The radio frequency semiconductor device structure according to claim 1, wherein: The material of the first microwave absorbing layer, the second microwave absorbing layer, or the third microwave absorbing layer includes: a thermoplastic resin and electromagnetic wave absorbing particles distributed in the thermoplastic resin.

3. The radio frequency semiconductor device structure according to claim 2, wherein: The thermoplastic resin includes polyurethane acrylic resin, polyimide resin, polybenzoxazole resin or benzocyclobutene resin.

4. The radio frequency semiconductor device structure according to claim 2, wherein: The electromagnetic wave absorbing particles include: porous glassy carbon balls, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, a mixture of carbon and metal particles, a mixture of graphene-carbonyl iron powder and ferroferric oxide particles, and silicon carbide-carbon or ferroferric oxide hollow balls.

5. The radio frequency semiconductor device structure according to claim 4, characterized in that: The metal particles include one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles and Fe particles, or any combination thereof.

6. The radio frequency semiconductor device structure according to claim 1, characterized in that: The first microwave absorbing layer is a single layer; or, is at least two layers, two adjacent first microwave absorbing layers are in contact with or separated from each other, and the materials of each first microwave absorbing layer are the same or different; And / or, the second microwave absorbing layer is a single layer; or, it is at least two layers, two adjacent second microwave absorbing layers are in contact with or separated from each other, and the materials of each second microwave absorbing layer are the same or different; And / or, the third microwave absorbing layer is a single layer; or, it is at least two layers, two adjacent third microwave absorbing layers are in contact with or separated from each other, and the materials of each third microwave absorbing layer are the same or different.

7. The radio frequency semiconductor device structure according to claim 1, characterized in that: Also includes: a second radio frequency component, located above the first radio frequency component and in the dielectric layer; The first microwave absorbing layer is located between the first radio frequency component and the second radio frequency component.

8. The radio frequency semiconductor device structure according to claim 1, wherein: The first radio frequency component includes: a transistor, with a shallow trench isolation structure provided between adjacent transistors; The shallow trench isolation structure between adjacent transistors is provided with the third microwave absorption layer.

9. The radio frequency semiconductor device structure according to claim 1, wherein: The first microwave absorbing layer and / or the second microwave absorbing layer and / or the third microwave absorbing layer absorb electromagnetic waves in a frequency range of 300 kHz to 300 GHz.

10. The radio frequency semiconductor device structure according to claim 1, wherein: The first radio frequency component includes at least one of a diode, a transistor and a MOS transistor.

11. The radio frequency semiconductor device structure according to claim 7, characterized in that: The second radio frequency component includes at least one of a capacitor, an inductor, and a resistor.

12. The radio frequency semiconductor device structure according to claim 1, wherein: The thickness of the first microwave absorbing layer and / or the second microwave absorbing layer is 0.5 micrometers to 50 micrometers.

13. The radio frequency semiconductor device structure according to claim 1, wherein: The semiconductor layer is a single crystal silicon layer, the substrate layer is a silicon layer, and the insulating layer is silicon oxide.

14. A method for manufacturing a radio frequency semiconductor device structure, characterized in that: include: Providing a substrate, wherein a first surface of the substrate is a semiconductor layer; forming a first radio frequency component on the semiconductor layer; forming a first dielectric layer, and forming a first interconnect structure in the first dielectric layer to connect the first radio frequency component; forming a second dielectric layer on the first dielectric layer and a first microwave absorbing layer located in the second dielectric layer; forming a second microwave absorbing layer in the substrate below the first radio frequency component; forming a third microwave absorbing layer between adjacent first radio frequency components; The substrate comprises, from bottom to top, a substrate layer, an insulating layer and the semiconductor layer stacked in sequence, and the second microwave absorbing layer is located in the substrate layer; Forming a third microwave absorbing layer between adjacent first RF components includes: forming a shallow trench isolation structure between adjacent first RF components; the shallow trench isolation structure is located in the semiconductor layer and includes: a trench, an insulating medium located in the trench, and forming the third microwave absorbing layer in the insulating medium; The projection of the first microwave absorbing layer and / or the second microwave absorbing layer in the direction of the surface of the substrate layer surrounds the projection of the first radio frequency component in the direction of the surface of the substrate layer.

15. The method for manufacturing a semiconductor device structure according to claim 14, wherein: The material of the first microwave absorbing layer, the second microwave absorbing layer, or the third microwave absorbing layer includes: a thermoplastic resin and electromagnetic wave absorbing particles distributed in the thermoplastic resin.

16. The method for manufacturing a semiconductor device structure according to claim 14, wherein: The step of forming a second dielectric layer on the first dielectric layer and a first microwave absorbing layer located in the second dielectric layer comprises: forming a second dielectric layer having a first groove; Applying a first microwave absorbing material layer to fill the first groove and cover the second dielectric layer; curing the first microwave absorbing material layer by irradiating light or heating; The first microwave absorbing material layer outside the first groove is removed, and the remaining first microwave absorbing material layer in the first groove serves as the first microwave absorbing layer.

17. The method for manufacturing a semiconductor device structure according to claim 14, wherein: Forming a second microwave absorbing layer on the substrate layer includes: coating a second microwave absorbing material layer on the back side of the substrate layer, and curing the second microwave absorbing material layer by irradiating light or heating to form the second microwave absorbing layer; Alternatively, a second groove is formed on the back side of the substrate layer, a second microwave absorbing material layer is coated to fill the second groove, the second microwave absorbing material layer outside the second groove is removed, and the remaining second microwave absorbing material layer in the second groove serves as the second microwave absorbing layer.

18. The method for manufacturing a semiconductor device structure according to claim 15, wherein: The thermoplastic resin includes: polyurethane acrylic resin, polyimide resin, polybenzoxazole resin or benzocyclobutene resin, and the electromagnetic wave absorbing particles include: porous glassy carbon balls, amorphous titanium ceramic particles, carbonyl iron particles, fine carbon particles, a mixture of carbon and metal particles, a mixture of graphene-carbonyl iron powder and ferroferric oxide particles, and silicon carbide-carbon or ferroferric oxide hollow balls.

19. The method for manufacturing a semiconductor device structure according to claim 18, wherein: The metal particles include one of copper particles, aluminum particles, Co particles, Fe-Co alloy particles, Ni particles, Fe-Ni alloy particles and Fe particles, or any combination thereof.

Images