Corrosion-resistant device and method for manufacturing the same

Abstract

An optoelectronic device (100) is described, comprising a carrier (1) and a semiconductor chip (2) arranged on the carrier, wherein the carrier has a mounting surface (1M), the mounting surface (1M) being provided with a reflective coating (4). An anticorrosion layer (7) is formed on the semiconductor chip, and the semiconductor chip is arranged between the reflective coating and the anticorrosion layer in a vertical direction. The reflective coating is provided with a barrier layer (5), which is locally arranged between the semiconductor chip and the reflective coating in a vertical direction. The barrier layer is formed of an inorganic material and serves as an additional anticorrosion layer of the reflective coating. In particular, the vertical layer thickness of the barrier layer (5) is between 1 nm and 100 nm, inclusive. Furthermore, the vertical layer thickness of the anticorrosion layer (7) is between 10 nm and 5000 nm, inclusive. Furthermore, a method for manufacturing a device is described, in particular a method for manufacturing such a device.

Description

Technical Field

[0001] A component, in particular an optoelectronic component, is specified. Also specified is a method for producing the optoelectronic component. Background Art

[0002] A carrier for an optoelectronic semiconductor chip has a mounting surface on which a component, in particular an optoelectronic semiconductor chip or a plurality of components, is arranged. In order to effectively reflect electromagnetic radiation emitted by the optoelectronic semiconductor chip away from the carrier, the mounting surface is preferably provided with a reflective coating, in particular a silver coating. However, the reflective coating may degrade due to corrosion, for example under the influence of corrosive gases (for example H2S gas), and change its original color.

[0003] For example, a silver layer changes its color from reflective metallic silver to a darker color under the influence of H2S gas. Due to this color change, the reflectivity of the corroded reflective coating decreases. Since the reflectivity changes or degrades differently depending on the wavelength, the chromaticity coordinates of the light emitted by the optoelectronic device may change in an undesirable manner compared to an uncorroded device. Summary of the invention

[0004] One object is to specify an efficient and color-stable component. Another object is to specify a reliable and cost-effective method for producing the component.

[0005] These objects are achieved by a component according to the independent claims and by a method for producing the component. Further embodiments and developments of the method or of the component are the subject matter of the further claims.

[0006] According to at least one embodiment of the device, in particular an optoelectronic device, the device has a carrier and a component arranged on the carrier. The component can be a semiconductor chip, in particular an optoelectronic semiconductor chip. When the device is operated, the semiconductor chip is, for example, configured to generate electromagnetic radiation. The carrier has a mounting surface preferably provided with a reflective coating. The component can be arranged on the reflective coating.

[0007] According to at least one embodiment of the device, an anti-corrosion layer is formed on the component, wherein the component is arranged in a vertical direction between the reflective coating and the anti-corrosion layer. In a top view, the anti-corrosion layer can completely cover the component. A large part of the reflective coating, for example at least 50%, 60%, 70%, 80% or at least 90% of the reflective coating, can be covered by the anti-corrosion layer. It is possible that in a top view of the carrier, the reflective coating is completely covered by the anti-corrosion layer.

[0008] A vertical direction is generally understood to be a direction perpendicular to the main extension plane of the carrier. Conversely, a transverse direction is understood to be a direction extending in particular parallel to the main extension plane of the carrier. The vertical direction and the transverse direction are transverse to each other, for example orthogonal to each other.

[0009] According to at least one embodiment of the device, the device has a barrier layer, which is arranged at least partially between the component and the reflective coating in a vertical direction. The barrier layer is preferably formed of an inorganic material and can be used as an additional anti-corrosion layer of the reflective coating. The barrier layer and the anti-corrosion layer can be formed of the same material or of different materials. In particular, the anti-corrosion layer is embodied as electrically insulating. The barrier layer can be embodied as electrically insulating or conductive. The barrier layer is arranged in particular in a vertical direction between the anti-corrosion layer and the reflective coating. In a top view of the carrier, the sum of the barrier layer and the anti-corrosion layer can completely cover the reflective coating.

[0010] In at least one embodiment of the optoelectronic device, the optoelectronic device has a carrier and a semiconductor chip arranged on the carrier. The carrier has a mounting surface provided with a reflective coating. An anticorrosion layer is formed on the semiconductor chip, wherein the semiconductor chip is arranged between the reflective coating and the anticorrosion layer in a vertical direction. The reflective coating is provided with a barrier layer, wherein the barrier layer is locally arranged between the semiconductor chip and the reflective coating in a vertical direction. The barrier layer is formed of an inorganic material and serves as an additional anticorrosion layer of the reflective coating. The barrier layer can be arranged between the connecting layer and the reflective coating. The barrier layer is in particular arranged directly on the reflective coating. In a top view, the anticorrosion layer is in particular arranged on the reflective layer covered by the barrier layer and can partially or completely cover the reflective layer.

[0011] The anticorrosion layer and the barrier layer are in particular arranged to improve the corrosion resistance of the reflective coating. The anticorrosion layer and / or the barrier layer may be formed of a transparent material having a lower gas permeability than an encapsulation material such as silicone or other encapsulation materials. In particular, the barrier layer and / or the anticorrosion layer are implemented as being gas-tight. For example, the vertical layer thickness of the anticorrosion layer and / or the barrier layer is selected such that the anticorrosion layer and / or the barrier layer are configured as being gas-tight.

[0012] In particular, the barrier layer has a layer thickness between 1 nm and 100 nm, between 1 nm and 50 nm or between 1 nm and 25 nm, inclusive. The barrier layer can be applied to the mounting surface of the carrier before applying the component. The anticorrosion layer can have a vertical layer thickness of, for example, between 10 nm and 5000 nm, inclusive. In particular, the anticorrosion layer is applied to the component and the carrier only after the component has been applied. Because the reflective coating is covered twice by an airtight or almost airtight layer, the reflective coating can be effectively protected, in particular from harmful gases. For mechanical or thermomechanical stresses, for example when processing or welding the device, cracks can be avoided in both protective layers at the same time or at the same location. Therefore, the risk of harmful gases penetrating into the reflective coating through cracks can be minimized, thereby improving the long-term corrosion stability of the device.

[0013] Since the barrier layer is formed from an inorganic material, it can be designed to be particularly gastight compared to protective layers made of organic materials or organic chemical compounds. For example, the layer thickness of the barrier layer made of an inorganic material can be adjusted in a simple manner by means of proven coating methods. In addition, the barrier layer can be formed to be particularly conformable to possible unevenness on the mounting surface, in particular possible unevenness at the edges and corners of possible metallizations on the mounting surface.

[0014] According to at least one embodiment of the device, the barrier layer has a three-dimensional network structure. Therefore, the barrier layer is in particular implemented as an independent layer. After production, such a barrier layer can exist independently of other layers. For example, the barrier layer is implemented as a self-supporting layer. A self-supporting layer is to be understood as a layer that is in particular self-supporting and does not decompose under its own weight. However, under the effect of its own weight, the self-supporting layer may deform.

[0015] The three-dimensional network structure can be polysiloxane-like, short-range ordered crystal-like or a three-dimensional network composed of interconnected macromolecules. For example, the barrier layer is formed by an amorphous material. However, in the short-range order, especially only in the short-range order, the amorphous material of the barrier layer can have a regular three-dimensional network structure. However, such a material has no long-range order, that is, the atoms or molecules far away from the short-range order environment have no regular and periodic arrangement.

[0016] Compared to protective layers made of organic chemical compounds or organic chemical compounds, for example, compared to thiolate coatings such as described in DE 10 2016 111 566 A1, barrier layers made of inorganic materials with the same layer thickness have significantly lower transmittance to common harmful gases. For example, thiolate coatings are produced by applying thiols to the surface, whereby a monolayer (thiolate) is formed on the surface. The thiolate coating therefore does not have a three-dimensional network structure, but rather a two-dimensional network structure.

[0017] Although the monolayer or multiple monolayers can prevent harmful gas molecules such as H2S molecules from reacting with the surface, the monolayer does not form a network link in all three spatial directions, so that the monolayer does not constitute a true barrier layer with a three-dimensional network structure. The monolayer or multiple monolayers therefore do not form an independent barrier layer, especially with a three-dimensional network structure.

[0018] Since mercaptans are also organic chemical compounds, mercaptan monolayers can usually only be formed on special metals. Therefore, unlike barrier layers made of inorganic materials, mercaptide coatings cannot be used universally. In addition, mercaptide coatings are only suitable as protective layers for a few harmful gases. In contrast, airtight barrier layers made of inorganic materials can be used as suitable protective layers for significantly more harmful gases than mercaptide coatings or coatings made of organic chemical compounds.

[0019] According to at least one embodiment of the device, the inorganic material of the barrier layer and / or the anticorrosion layer is an oxide material, a nitride material, an oxynitride material or a fluoride material. It is also possible that the inorganic material of the barrier layer is a siloxane-based, polysiloxane-based or polysiloxane-type material.

[0020] The barrier layer and / or the anti-corrosion layer may comprise one or more inorganic layers and have, for example, a layer stack or layer arrangement. The inorganic layer is preferably as transparent as possible within the wavelength range of the light emitted by the component so as not to damage or only damage the efficiency of the device as little as possible. For this purpose, suitable electrical insulating materials are, for example, oxides, oxynitrides or nitrides, in particular made of one or more elements of the following group, including silicon, aluminum, titanium, zinc, indium, tin, niobium, tantalum, hafnium, zirconium, yttrium and germanium. The inorganic layer may be an Al2O3 layer, a SiO2 layer, a Si3N4 layer, a TiO2 layer, a ZnO2 layer, a Ta2O5 layer, a Ge3N4 layer or a ZrO2 layer.

[0021] The inorganic layer made of siloxane- or polysiloxane-based material can be a layer formed by deposition and by means of polymerization, especially by means of plasma polymerization. For example, the inorganic layer is a plasma-polymerized siloxane layer, especially based on hexamethyldisiloxane, tetramethyldisiloxane or based on divinyltetramethyldisiloxane. Such a layer can be produced by a plasma polymerization method under vacuum or atmospheric pressure.

[0022] According to at least one embodiment of the device, the barrier layer or the anti-corrosion layer is an electrically insulating layer. However, it is conceivable that the inorganic material of the barrier layer is a radiation-transmissive and electrically conductive material. For example, the barrier layer is formed of a transparent conductive oxide.

[0023] Transparent conductive oxides (TCOs) are transparent and conductive materials, usually metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). In addition to binary metal oxides such as ZnO, SnO2 or In 2 O 3 In addition, the TCO group also includes ternary metal oxides such as Zn 2 SnO 4 、CdSnO 3 、ZnSnO 3 MgIn 2 O 4 、GaInO 3 、Zn 2 In 2 O 5 or In 4 Sn 3 O 12 Or a mixture of different transparent conductive oxides. Furthermore, the TCO does not necessarily correspond to a stoichiometric composition and can also be p-doped or n-doped.

[0024] According to at least one embodiment of the device, the vertical layer thickness of the anti-corrosion layer is equal to or greater than the vertical layer thickness of the barrier layer, for example at least two times, at least three times, at least five times, at least ten times, or at least 20 times the vertical layer thickness of the barrier layer. However, it is conceivable that the vertical layer thickness of the anti-corrosion layer has a smaller layer thickness than the barrier layer.

[0025] The vertical layer thickness of the barrier layer can be between 1 nm and 100 nm, between 1 nm and 25 nm or between 1 nm and 10 nm, inclusive, for example between 1 nm and 5 nm, for example between 1 nm and 3 nm. In the case of such a thin barrier layer, the barrier layer can be penetrated in a simple manner to produce an electrical connection between the component or between the semiconductor chip and the carrier. In addition, the thin barrier layer has a particularly high compliance with the environment, so that the barrier layer seals the reflective coating in a particularly gas-tight manner. However, the barrier layer can have a layer thickness of more than 100 nm or more than 200 nm. For example, the barrier layer can be formed from MgF2. For example, the barrier layer is applied to the mounting surface by means of a sputtering method, a plasma-enhanced chemical vapor deposition method (PECVD: Plasma-Enhanced Chemical Vapor Deposition) or an atomic layer deposition method (ALD: Atomic Layer Deposition). In particular, atomic layer deposition is particularly suitable for producing a particularly thin barrier layer with a particularly high compliance with the environment.

[0026] The vertical layer thickness of the anti-corrosion layer can be between 10 nm and 5000 nm, including end values, such as between 10 nm and 1000 nm, between 10 nm and 500 nm, or between 10 nm and 200 nm, including end values. The anti-corrosion layer can be formed using the same method and / or material as the barrier layer. However, since the anti-corrosion layer also expects a larger layer thickness and thus does not require such high compliance, other methods and materials can also be used to form the anti-corrosion layer from other perspectives such as throughput, cost, efficiency.

[0027] According to at least one embodiment of the device, the component or the semiconductor chip is electrically conductively connected to the carrier via at least one electrical connection structure or via a plurality of electrical connection structures. In particular, the electrical connection structure extends through the barrier layer in a vertical direction up to the mounting surface. In particular, the barrier layer is configured to be electrically insulating. If the barrier layer is electrically conductive, the connection structure can alternatively terminate on the barrier layer and be electrically conductively connected to the barrier layer.

[0028] The connection structure can be a wire connection, such as a bonding wire or a printed conductor, or a connection column, or a conductive adhesive or a conductive connection material as a connection layer. The connection structure can be located only on the front side facing away from the mounting surface, only on the back side facing the mounting surface, or partly on the front side and partly on the back side of the component or the semiconductor chip. In other words, the component or the semiconductor chip can be electrically contacted with the outside only through its front side, only through its back side, or partly through the front side and partly through the back side. The connection structure can be directly or indirectly adjacent to the barrier layer.

[0029] According to at least one embodiment of the device, the carrier is part of a housing, wherein the carrier is laterally surrounded by a non-metallic housing frame. The housing frame may have a cavity, on the bottom of which the component or the semiconductor chip is arranged. The cavity may have a surrounding outer surface that may be covered by the barrier layer. The outer surface may be partially or completely covered by the barrier layer.

[0030] For example, the carrier is implemented as a lead frame. The carrier can have a first subsection, which is assigned to a first electrode of the component, for example, and a second subsection, which is assigned to a second electrode, for example, wherein the first subsection is spaced apart from the second subsection in a lateral direction. In particular, the first subsection is mechanically connected to the second subsection via the housing frame. The first and / or second subsection can extend through the housing frame in a vertical direction. The housing frame is in particular designed to be electrically insulating and can be a potting body. The mounting surface of the component can be formed by the surface of the first subsection and / or the second subsection.

[0031] According to at least one embodiment of the device, the semiconductor chip is configured to generate electromagnetic radiation, for example in the infrared, visible or ultraviolet spectral range, during operation of the device. In particular, the semiconductor chip is a volume emitter. In the case of a volume emitter, the electromagnetic radiation generated during operation of the semiconductor chip can be coupled out not only via the front side but also via the rear side and via the side surfaces of the semiconductor chip.

[0032] According to at least one embodiment of the device, the semiconductor chip is fixed to the barrier layer by means of a connecting layer. The connecting layer is in particular embodied as an electrical insulator. The connecting layer can be an adhesive layer. For example, the connecting layer has reflective particles for reflecting electromagnetic radiation, particles for improving thermal conductivity or electrically conductive particles. The thermally conductive particles or reflective particles can be embedded in a particularly adhesive matrix material of the connecting layer. It is also possible that the connecting layer is free of reflective particles and / or free of additional particles for improving thermal conductivity. It is also conceivable that the connecting layer is made of an adhesive filled with electrically conductive particles, such as silver particles, for additional electrical contact.

[0033] According to at least one embodiment of the device, the anticorrosion layer and the barrier layer are formed from the same material. The anticorrosion layer and the barrier layer can be formed successively by means of the same manufacturing method. In particular, the barrier layer is applied to the reflective coating before the semiconductor chip is applied. The anticorrosion layer can be applied to the semiconductor chip and / or to the barrier layer, in particular, after the semiconductor chip has been applied. In contrast, the anticorrosion layer and the barrier layer can be formed from different materials or produced by different manufacturing methods.

[0034] According to at least one embodiment of the device, the reflective coating is a silver coating. The semiconductor chip is a volume emitter, which is fixed to the barrier layer by means of the connecting layer. The connecting layer can have a bonded matrix material in which reflective particles or thermally conductive particles are embedded. However, in contrast to the silver coating, other coatings can be used, in particular metal coatings, such as aluminum coatings or gold coatings, or coatings consisting of alloys, in particular silver-based alloys.

[0035] However, a silver coating is preferred because, in addition to the electrical and thermal connection of the component, silver has a very high reflectivity for the visible spectrum, thus increasing the brightness or efficiency of the device. This may be particularly critical for designs with bonded volume emitter chips, since most of the light generated by the volume emitter will be incident on the reflective coating. Since silver is very sensitive to corrosion, especially to corrosive gases such as H2S, the reflective coating will darken rapidly to black under normal circumstances. As a result, less light is reflected. Furthermore, the reflection is wavelength dependent due to the discoloration. As a result, the device will emit dimmer light and emit light with a changed light color.

[0036] In order to prevent the corrosion of the reflective coating, the device has an anticorrosion layer and a barrier layer, wherein the barrier layer serves as an additional anticorrosion layer. In addition, the device may have a potting body, which in a top view, in particular completely covers the semiconductor chip. The potting body is particularly configured to encapsulate the semiconductor chip and may be a silicone potting body or a potting body made of epoxy resin or a mixed material. Since silicone is significantly more light-resistant and less susceptible to aging than epoxy resin, silicone is preferred relative to epoxy resin. The matrix material of the connecting layer may also be formed by silicone. The combination of the potting body, the anticorrosion layer and the barrier layer may particularly well protect the reflective coating from possible corrosion, because the potting body, the anticorrosion layer and the barrier layer may be formed by different materials, and therefore may particularly effectively prevent different harmful gases from penetrating into the reflective coating.

[0037] According to at least one embodiment of the device, the barrier layer is embodied as electrically insulating. The semiconductor chip can be electrically conductively connected to the carrier via an electrical connection structure, wherein the electrical connection structure extends through the barrier layer in a vertical direction and can directly or indirectly adjoin the barrier layer in the process. However, if the barrier layer is embodied as electrically conductive, the electrical connection structure can be arranged on the barrier layer and can in particular be in direct electrical contact with the barrier layer.

[0038] According to at least one embodiment of the device, the device has an electronic component. The component can be another optoelectronic semiconductor chip, a protection diode, such as an ESD chip (electrostatic discharge chip) or an IC chip (integrated circuit chip). In particular, the component is conductively connected to the semiconductor chip. For example, the component is arranged on the barrier layer, wherein the component is covered by the anti-corrosion layer in a top view, especially completely covered. The device can have a plurality of components, for example in the form of a light-emitting semiconductor chip, a light-detecting semiconductor chip, a protection diode and / or an IC chip. It is also possible that a component contains a plurality of electronic components such as optoelectronic semiconductor chips, ESD chips or IC chips. Non-luminous or non-detecting chips such as ESD chips and IC chips can also be completely encapsulated in the housing. For example, when injection molding around the lead frame or when forming a cavity, these non-luminous or non-detecting chips can be encapsulated / covered by potting / precision filling silicone rings.

[0039] In one embodiment of the light source, the light source has a device, in particular a device as described herein, wherein the component or the semiconductor chip is arranged to generate electromagnetic radiation in the visible, infrared or ultraviolet spectral range during operation of the device. The light source can be used in general lighting devices, in vehicles (e.g. in the exterior and interior lighting of a vehicle) or in the headlights of a vehicle. It is also conceivable that the light source or the device is used in an electronic device, a mobile phone, a touchpad, a laser printer, a camera, an identification camera, a display or a system consisting of LEDs, sensors, laser diodes and / or detectors.

[0040] In at least one embodiment of the method for manufacturing an optoelectronic component, a carrier is provided. The carrier has a mounting surface, which is particularly provided with a reflective coating. A barrier layer is applied to the reflective coating, wherein the barrier layer is formed by an inorganic material. The barrier layer is preferably used as an additional anti-corrosion layer of the reflective coating. In particular, after applying the barrier layer, a semiconductor chip is placed on the carrier. For example, the semiconductor chip is bonded to the carrier by means of a connecting layer. In particular, after the semiconductor chip is placed, an anti-corrosion layer is applied to the semiconductor chip. The semiconductor chip is arranged between the reflective coating and the anti-corrosion layer in a vertical direction. The barrier layer is at least partially arranged between the semiconductor chip and the reflective coating in a vertical direction.

[0041] In particular, the anticorrosion layer is applied to the semiconductor chip and / or the surrounding surface of the reflective layer only after all electrical contacts of the semiconductor chip have been completed. The surface protection provided by the anticorrosion layer can usually be very good. However, if the anticorrosion layer is implemented as a thin, hard or fragile protective layer, the anticorrosion layer may be susceptible to mechanical stress or thermomechanical stress, wherein possible cracks appear in the anticorrosion layer, through which harmful gases may diffuse. Possible cracks are particularly critical at material transitions, especially at the interface with a soft (e.g., silicone-based) connecting layer. By serving as an additional anticorrosion layer and being arranged as a barrier layer between the reflective coating and the anticorrosion layer, the reflective coating can be particularly effectively protected from the influence of harmful gases.

[0042] According to at least one embodiment of the method, the barrier layer is applied to the reflective coating by means of atomic layer deposition or by means of a coating method before the semiconductor chip is placed, so that the barrier layer is formed as a separate layer on the reflective coating. Since the barrier layer is deposited before the semiconductor chip or component is placed or bonded, the area below the semiconductor chip or component (i.e. the area between the semiconductor chip or component and the reflective coating) can also be protected from corrosion.

[0043] For example, after bonding, the component is electrically contacted, especially with wires. The component can be an optoelectronic semiconductor chip, an ESD chip or an IC chip. In order to facilitate the wire contact of the component, the barrier layer can be designed to be particularly thin, because a layer that is too thick will prevent wire contact or at least make wire contact significantly more difficult. For a thin layer thickness of less than 25nm, less than 20nm, in particular less than 10nm, for example between 1nm and 5nm (including end values) or between 1nm and 3nm (including end values), a stable electrical contact portion that completely passes through the barrier layer can be formed between the component and the carrier without great expenditure. In order to achieve sufficient protection under such a small layer thickness, the barrier layer is implemented as compliant and tight as possible, so that the barrier layer is constructed to be impermeable, especially to harmful gases such as H2S. With the help of a corresponding deposition method (such as atomic layer deposition, PECVD or cathode sputtering), the layer thickness can be adjusted very accurately regardless of the material system or layer material. In contrast, in the case of thiolate coatings, it is significantly more difficult to adjust the layer thickness, since the layer thickness of thiolate coatings is determined by the material, in particular by the molecular length.

[0044] Depending on the embodiment of the carrier, the wire diameter, the wire material and the barrier layer material, electrical contact (e.g. wire contact) can also be made through thicker layers. The barrier layer can be designed to be thicker than 10 nm, 25 nm, 50 nm or thicker than 100 nm. Subsequently, components such as LED chips, protection diodes or other chips with integrated circuits are glued on and wire contact is made through the barrier layer. Sufficiently thin barrier layers are easily broken in the case of wire contact, so that sufficiently good electrical contact can be achieved.

[0045] When using a very compliant deposition method such as ALD, the back side of the device or the carrier and therefore the solder side can also be at least partially coated. It has been shown that in the case of a sufficiently thin layer, the layer separates from the solder or flux during the soldering process and does not significantly impair the soldering.

[0046] Due to the low layer thickness of the barrier layer, the surface protection may not be sufficient, for example, to cope with higher corrosion protection requirements. In addition, during the line contact, the protection in the line contact area may be weakened, whereby a second coating may be required depending on the requirements for corrosion resistance. Therefore, after the line contact of the component, an anti-corrosion layer can be applied to the component and / or the mounting surface. The use of such a layer can achieve better corrosion protection. The device, in particular an LED device, can then be further processed, for example using silicone potting, conversion steps, etc., until a final, separated device is obtained. According to at least one embodiment of the method, the barrier layer is structured so that the reflective coating has a sub-area that is not covered by the barrier layer in a top view. In particular, the semiconductor chip is conductively connected to the carrier on the uncovered sub-area.

[0047] According to at least one embodiment of the method, the carrier is implemented as part of a housing that is laterally surrounded by a non-metallic housing frame. The housing frame can be formed by means of a potting method or a plastic molding method. In particular, the housing frame has a cavity for accommodating the component or the semiconductor chip. The barrier layer is applied to the reflective coating and / or to the surrounding outer surface of the cavity, in particular after the housing frame has been formed, so that the outer surface is covered by the barrier layer.

[0048] A potting method or plastic molding method is generally understood to be a method in which a molding compound (in this case a housing frame) is formed according to a predetermined shape, preferably under pressure, and optionally solidified. In particular, the term "potting method" or "plastic molding method" includes at least precision dispensing, jetting, molding, injection molding, transfer molding and compression molding.

[0049] According to at least one embodiment, the barrier layer is applied to the bottom surface and / or the outer surface of the cavity after the housing frame is formed. The barrier layer can be applied to the bottom surface of the cavity over the entire surface and, if necessary, structured in a subsequent method step. Alternatively, a mask can be used when applying the barrier layer so that the barrier layer is applied to the bottom surface of the cavity in a structured manner. Thus, the barrier layer is applied before the semiconductor chip is applied to the mounting surface and thus before the electrical contact of the semiconductor chip is made.

[0050] Alternatively, the barrier layer can be applied to the reflective coating before the housing frame is formed. After the housing frame is formed, the barrier layer can be partially surrounded by the housing frame. In other words, the formation of the barrier layer can be carried out before the potting method or plastic molding method, in particular after the reflective coating, in particular the reflective silver layer, is deposited on the mounting surface. As a result, a further weakness, namely the transition from the coating material, in particular silver, to the potted housing can be alleviated. This is because if the barrier layer is applied only after the potting method or plastic molding method, this transition can be torn during the further process management of the device.

[0051] In addition, this creates the further possibility of implementing the barrier layer as a conductive transparent layer. Correspondingly, the barrier layer can be constructed so that the barrier layer undergoes, for example, deflashing without damage after the potting method or plastic molding method. The barrier layer can be structured to simplify the electrical contact of the ESD chip or other chips, for example, by means of a conductive adhesive connection layer (for example, by means of a silver conductive adhesive layer). This structuring can be achieved before the formation of the barrier layer, for example, by means of a paint layer or by subsequently removing the barrier layer locally. The local removal is carried out, for example, by means of laser ablation, ion bombardment or similar methods, or also mechanically, for example by friction, milling, stamping, etc.

[0052] In principle, structuring can also be performed in the area of ​​the electrical contacts, for example to simplify the line contacts. However, the attraction of a thin and especially compliant coating is that it is not necessary. If the connection structure passes through the barrier layer, it can directly adjoin the barrier layer. The connection structure can be a bonding wire or a connecting column. The device can have a plurality of such connection structures. In order to improve the layer adhesion, a surface pretreatment or surface cleaning can be performed before the deposition of the barrier layer or the anticorrosion layer or before the deposition of both layers, for example by means of a plasma treatment.

[0053] By means of the barrier and anti-corrosion layers, the device can be exposed to more severe corrosion conditions. With the aid of such a coating, a substrate coated with silver can be used, for example, in particular for LED devices which are used in corrosive environments or thus for a wider range of applications. For example, coating with silver is much cheaper than, for example, coating with gold and leads to significantly more efficient devices due to the higher reflectivity. Furthermore, this enables the use of volume emitter chips with further cost and efficiency advantages.

[0054] Compared to a single coating only after the electrical contacting of the components, the areas below the components and / or below the connection layer can also be better protected here, i.e. both from corrosion caused by harmful gases and from aging caused by moisture and contact with the adhesive of the connection layer. In addition, due to the small thickness, the material of the barrier layer can be selected or optimized with regard to adhesion, for example, to a silver-coated carrier, without having to take too much into account efficiency losses, which in the case of thicker coatings is only a limiting constraint after the electrical contacting. By means of the coating mentioned here, for example, a silver-coated carrier or a silver bonding wire can also be protected from discoloration, especially in the case of encapsulation using highly phenylated or HRI silicones. Encapsulation using HRI silicones offers the advantage of higher brightness or greater device efficiency.

[0055] The above method is particularly suitable for manufacturing the device described herein. Therefore, features described in conjunction with the device can also be used for the method, and vice versa. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Other preferred embodiments of the device and method are as follows: Figures 1A to 4 The illustrated embodiments are obtained.

[0057] Figure 1A , Figure 1B and Figure 1C shows schematic diagrams of some embodiments of the device,

[0058] Figure 2A , Figure 2B , Figure 2C and Figure 2D Schematic diagrams showing other embodiments of the device, and

[0059] Figure 3 and 4 Schematic diagrams of further embodiments of devices having multiple components are shown.

[0060] Elements that are identical, of the same type or have the same function are provided with the same reference numerals in the figures. The figures are schematic diagrams and are therefore not necessarily drawn to scale. On the contrary, relatively small elements and in particular layer thicknesses may be exaggerated for the sake of clarity. DETAILED DESCRIPTION

[0061] Figure 1A The figure schematically shows a side view of an optoelectronic component 100. The optoelectronic component 100 is, for example, a light emitting diode component.

[0062] The device 100 comprises a carrier 1, which comprises, for example, an electrically insulating base, such as a ceramic substrate. The carrier 1 has a front side 1V and a back side 1R opposite to the front side 1V. For example, the front side 1V is partially formed by the surface of the first metallization 91A and the second metallization 92A. The front side 1V may be partially formed by the surface of the base of the carrier 1.

[0063] The metallizations 91A and 92A are in particular electrically insulated from one another and are arranged on the base body of the carrier 1. On the rear side 1R of the carrier 1, there are third and fourth metallizations 91B and 92B which are electrically insulated from one another. In particular, the metallizations 91A and 92A on the front side 1V and the corresponding metallizations 91B and 92B on the rear side 1R are electrically conductively connected to one another via through-contacts 91 and 92. The through-contacts 91 and 92 extend in a vertical direction, in particular through the base body of the carrier 1.

[0064] The surfaces of the metallizations 91A and 92A can form the mounting surface 1M of the carrier 1. The front side 1V of the carrier 1 thus forms the mounting surface 1M for the electronic components 2 and 2B, for example, for the optoelectronic semiconductor chip 2. The metallization 91A is provided with a reflective coating 4. That is, the mounting surface 1M is coated with the reflective coating 4. The further metallization 92A can also be provided with a reflective coating 4. For example, the reflective coating 4 is a silver layer or a silver-containing reflective layer. Figure 1A Alternatively, the metallizations 91A and 92A themselves may be embodied as reflective layers, for example as reflective layers coated with silver or containing silver.

[0065] The component 2 or 2B, which may be a light-emitting semiconductor chip 2, has a front side 2V and a rear side 2R opposite the front side 2V. During operation of the device 100, the component 2 is provided, in particular, for generating electromagnetic radiation. The component 2 is arranged with its rear side 2R on the mounting surface 1M. For example, the component 2 is fixed to the mounting surface 1M by means of a connecting layer 6, in particular, is bonded to the mounting surface 1M by means of an adhesive connecting layer 6.

[0066] The connection layer 6 has a matrix material 6A, in particular a matrix material 6A that promotes adhesion. Reflective particles 6P can be embedded in the matrix material 6A, and the reflective particles 6P are in particular provided for reflecting electromagnetic radiation emitted by the component 2 during the operation of the device 100. Therefore, a connection layer 6, in particular a connection layer 6 made of an adhesive, is arranged between the back side 2R of the semiconductor chip 2 and the front side of the reflective coating 4. The adhesive can include one or more of the following materials: a material based on silicone or siloxane, a silicone epoxy, an epoxy resin, and an acrylate. The back side 2R of the semiconductor chip 2 can be completely covered by the connection layer 6.

[0067] The reflective particles 6P can be designed as white reflective particles. The reflective particles 6P thus induce a white impression. The white reflective particles are characterized in particular in that they can reflect the emitted electromagnetic radiation particularly effectively and do not change the color coordinates of the emitted electromagnetic radiation.

[0068] A barrier layer 5 is arranged between the connection layer 6 and the reflective coating 4. The barrier layer 5 can be in direct contact with the reflective coating 4 and / or with the connection layer 6. The reflective coating 4 can be partially or completely covered by the barrier layer 5 or, except for the electrical contact points, completely covered by the barrier layer 5. It is possible that the connection layer 6 directly adjoins both the barrier layer 5 and the rear side 2R of the component 2.

[0069] like Figure 1A As schematically shown, the component 2 or semiconductor chip 2 is electrically conductively connected to the carrier 1, in particular to the metallizations 91A and 92B, on its front side 2V by means of two connecting structures 8, for example in the form of bonding wires 8. The first bonding wire 81, for example, forms an electrical connection between a first electrical chip contact surface (not shown here) on the front side 2V of the semiconductor chip 2 and the first metallization 91A. The second bonding wire 82 can form an electrical connection between a second electrical chip contact surface (not shown here) on the front side 2V of the semiconductor chip 2 and the second metallization 92A. The bonding wire 8 can be in direct electrical contact with the subregion 4T of the reflective coating 4.

[0070] The reflective coating 4 is in particular subdivided into a first subregion 41 and a second subregion 42 spatially separated from the first subregion 41. In a top view of the carrier 1, the first subregion 41 is in particular partially covered by the semiconductor chip 2 and the connection layer 6. The second subregion 42 is in particular electrically insulated from the first subregion 41 and may not be covered by the semiconductor chip 2 and / or the connection layer 6. It is possible that the first subregion 41 covers, in particular completely covers, the first metallization 91A in a top view. In a top view, the second subregion 42 may partially or completely cover the second metallization 92A.

[0071] exist Figure 1A In the embodiment, the anticorrosion layer 7 is arranged in the form of an inorganic coating on the semiconductor chip 2 and on the barrier layer 5. In a top view of the carrier 1, the anticorrosion layer 7 can partially or completely cover the exposed surface of the carrier 1, the exposed surface of the metallization 91A and 92A and / or the base of the carrier 1, the exposed surface of the reflective coating 4, the exposed surface of the semiconductor chip 2 and / or the exposed surface of the connecting structure 8. For example, the front side 1V and the side edge 2S of the semiconductor chip 2 are partially or completely covered by the anticorrosion layer 7.

[0072] Even if cracks occur in the anti-corrosion layer 7 in the interface region between the connection layer 6 and the anti-corrosion layer 7 or in other regions, the barrier layer 5 can still serve as additional anti-corrosion protection for the reflective coating 4. As a result, preferably all subregions 4T of the reflective coating 4, in particular the subregion below the semiconductor chip 2, are effectively protected from corrosion. In a plan view of the carrier 1, the reflective coating 4 is protected from corrosion both by the barrier layer 5 and by the anti-corrosion layer 7, in particular at every location.

[0073] according to Figure 1A , forming the potting body 3M so that in a top view of the carrier 1, the potting body 3M covers, in particular completely covers, the anticorrosion layer 7, the semiconductor chip 2, the barrier layer 5 and the carrier 1. The semiconductor chip 2 and the connecting structure 8 are encapsulated by means of the potting body 3M and are thus partially embedded in the potting body 3M. The potting body 3M is formed in particular of a radiation-transmissive, in particular transparent material. For example, the potting body 3M is implemented in terms of its layer thickness and material selection so that the potting body 3M is transparent to most of the electromagnetic radiation emitted by the semiconductor chip 2, in particular in the visible, ultraviolet or infrared spectral range, for example at least 50%, 60%, 70%, 80% or at least 90%.

[0074] The potting body 3M may include epoxy resin, polysiloxane, silicone resin, or a mixed material containing silicone resin. The potting body 3M may also include silicone resin material filled with particles such as luminous material particles, scattering materials or other particles, polysiloxane, epoxy resin, or a mixed material containing silicone resin. Figure 1A In the embodiment shown, the potting body 3M has a rectangular shape. The potting body 3M may have different geometric shapes, for example, a dome-shaped geometric shape.

[0075] Different from Figure 1A , the carrier 1 can be implemented in the form of a printed circuit board. The metallizations 91A and 92A can be implemented as printed conductors or connection surfaces. Alternatively, the carrier 1 can be formed by a metal lead frame, which is in particular laterally surrounded by the electrically insulating material of the base body of the carrier 1. In this case, the lead frame can be formed by the metallizations 91A, 92A, 91B and / or 92B.

[0076] Figure 1B The embodiment shown in corresponds essentially to Figure 1A . In contrast, the component 2 or 2B has only a single bonding wire 82. For electrical contacting of the component 2 or 2B, in addition to the bonding wire 81, the component 2 or 2B also has a back-side connection structure 8, in particular in the form of a back-side connection column 81. The back-side connection column 81 extends in particular through the barrier layer 5 and forms a direct electrical contact with the reflective coating 4.

[0077] Different from Figure 1B , the component 2 or 2B can have two back-side connection structures 81 and 82, each of which is in the form of a connection column. The component 2 can be arranged on the carrier 1 so that one of the connection structures is electrically conductively connected to the first sub-region 41 of the reflective coating 4, and the other of the two connection structures is electrically conductively connected to the second sub-region 42 of the reflective coating 4. Such electrical contact of the component 2 or 2B is, for example, Figure 3 It is schematically shown in FIG.

[0078] Figure 1C The embodiment shown corresponds essentially to Figure 1B The embodiment of the device 100 shown in FIG. 1 is different from this, and the barrier layer 5 can be configured to be conductive. For example, the barrier layer 5 is formed of a transparent conductive material. Figure 1A and 1B Unlike the embodiment shown in , the barrier layer 5 is not implemented as continuous, but has at least two sub-regions 51 and 52, which are separated from each other in the lateral direction and therefore in space and in electricity. The sub-regions 51 and 52 of the barrier layer 5 are especially electrically conductively connected to the sub-regions 41 and 42 of the reflective coating 4, in particular directly electrically conductively connected.

[0079] like Figure 1C As shown, the connection structure 8 ends at the corresponding sub-regions 51 and 52 of the barrier layer 5. The back-side connection studs 81 and bonding wires 82 in particular do not extend through the barrier layer 5, but end on the barrier layer 5. In the intermediate region between the sub-layers 51 and 52 of the barrier layer 5 or in the intermediate region between the sub-layers 41 and 42 of the reflective coating 4, the anti-corrosion layer 7 can extend through the barrier layer 5 and / or the reflective coating 4 in the vertical direction.

[0080] Figure 2A The embodiment shown in FIG. 1 corresponds substantially to the embodiment of the device 100 shown in FIG. 1 . In contrast thereto, the carrier 1 is embodied in the form of a lead frame having a first subsection 11 and a second subsection 12, wherein the lead frame is laterally closed by a housing frame 10G. The subsections 11 and 12 may be formed by Figures 1A to 1C The metallizations 91A and 92A are shown formed.

[0081] Therefore, the optoelectronic device 100 comprises a housing 10, which is formed in particular by a housing frame 10G, and a carrier 1, which is formed in particular as a lead frame. The housing 10 has a front side 10V and a back side 10R opposite to the front side 10V. The housing frame 10G has, for example, an electrically insulating plastic material, for example a potting or encapsulation material such as epoxy resin or a ceramic material. The housing frame 10G can be manufactured by means of a potting method or a plastic molding method. The lead frame 1 has an electrically conductive material, for example a metal. In particular, the lead frame 1 has copper. Copper offers the advantage of being very good at conducting electricity and heat.

[0082] The subsections 11 and 12 of the carrier 1 can be at least partially, in particular completely, coated with a reflective coating 4, for example a silver coating. The reflective coating 4 has subregions 4T, 41 and 42, which are spatially and electrically separated from each other and are each electrically conductively connected to one of the subsections 11 and 12 of the carrier 1. The front side 1V of the carrier 1 can be partially or completely covered by the reflective coating 4.

[0083] according to Figure 2A , the sub-parts 11 and 12 of the carrier 1 are surrounded by the housing frame 10G, so that all sides of these sub-parts are covered by the material of the housing frame 10G, especially completely covered. The front side 1V and the back side 1R of the carrier 1 may not be covered by the material of the housing frame 10G. Figure 2A Differently, the back side 1R of the carrier 1 can be partially or completely covered by the material of the housing frame 10G. The front side 1V of the carrier 1 can also be partially covered by the material of the housing frame 10G. This is for example Figure 2B and 2C Schematically shown in FIG. 1 , in which, in a plan view of the carrier 1 , the first subsection 11 and the second subsection 12 are partially covered and partially uncovered by the material of the housing frame 10G.

[0084] The housing 10 of the optoelectronic component 100 has a cavity 3 on its front side 10V. The cavity 3 is configured as a depression in a housing frame 10G. On the front side 10V of the housing 10, the cavity 3 has, for example, a disc-shaped, rectangular or other cross section. In a cross-sectional view of the carrier 1, the cavity 3 tapers from the front side 10V toward the rear side 10R of the housing 10.

[0085] The cavity 3 of the housing 10 of the optoelectronic device 100 has a bottom surface 3B and a peripheral wall 3W. The wall 3W is formed by the material of the housing frame 10G. The wall 3W forms the outer surface of the cavity 3. The wall 3W of the cavity 3 of the housing 10 can form a reflector of the optoelectronic device 100. The outer surface 3W or the wall of the cavity 3 can be coated with a reflective coating 4. The bottom surface 3B of the cavity 3 can be formed by the front side of the carrier 1, that is, by the surfaces of the subsections 11 and 12. In particular, the mounting surface 1M is defined by the bottom surface 3B. The cavity 3 is also filled with a potting body 3M.

[0086] according to Figure 2A The arrangement of the reflective coating 4, the barrier layer 5, the connecting layer 6, the component 2 or 2B, the anti-corrosion layer 7, the connecting structure 8 and the potting body 3M is particularly similar to Figure 1A In this regard, in combination with Figure 1A Public features can also be used Figure 2A The arrangement disclosed in .

[0087] and Figure 1ADifferently, the barrier layer 5 may partially or completely cover the outer surface 3W and / or the front surface 10V of the cavity 3. The anti-corrosion layer 7 may also partially or completely cover the outer surface 3W and / or the front surface 10V of the cavity 3. Unlike the mercaptan coating, providing a mercaptan coating directly covering the outer surface 3W cannot be easily achieved because the outer surface 3W is the surface of the electrically insulating housing frame 10G and the mercaptan coating generally requires a metal surface.

[0088] Figure 2B The embodiment shown corresponds essentially to Figure 2A In contrast, the electrical contacting of the component 2 or 2B is carried out according to Figure 1B In the embodiment shown, this is done via bonding wires 82 and connecting studs 81 on the back. Thus, with regard to the electrical contacting of component 2 or 2B, the combination Figure 1B Public features can also be used Figure 2B The embodiments in .

[0089] As Figure 2A A further distinction is made according to Figure 2B The front side 1V of the carrier 1 has a sub-area which is covered by the housing frame 10G in a plan view. Therefore, in a plan view of the carrier 1, the reflective coating 4 is also partially covered by the housing frame 10G. Figure 2B , the reflective coating 4 can be applied to the carrier 1, in particular to the mounting surface 1M of the carrier 1, before forming the housing frame 10G. Figure 2A The reflective coating 4 can be applied to the carrier 1 before or after the formation of the housing frame.

[0090] exist Figure 2C In the embodiment shown, the barrier layer 5 can be configured to be conductive. For example, the barrier layer 5 is formed of a transparent conductive material. Figure 2A and 2B Unlike the embodiment shown in , the barrier layer 5 is not implemented as continuous, but has at least two laterally and therefore spatially and electrically separated sub-regions 51 and 52. The sub-regions 51 and 52 of the barrier layer 5 are in particular electrically conductively connected to the sub-regions 41 and 42 of the reflective coating 4, in particular directly electrically conductively connected.

[0091] The connection structure 8 ends at the respective sub-regions 51 and 52 of the barrier layer 5. The backside connection 81 and the bonding wire 82 do not extend through the barrier layer 5, but end on the barrier layer 5. The connection layer 6 can be filled with electrically and thermally conductive particles 6L. In the intermediate region between the sub-layers 51 and 52 of the barrier layer 5 or in the intermediate region between the sub-layers 41 and 42 of the reflective coating 4, the anti-corrosion layer 7 can extend through the barrier layer 5 and / or the reflective coating 4 in the vertical direction.

[0092] According to one embodiment, for the electrical contacting of the component 2 or 2B, a combination Figure 1C Public features can also be used Figure 2C In this case, in addition to the bonding wires 82, the connecting studs 81 on the back side are also used for contacting.

[0093] Figure 2D The embodiment shown in corresponds essentially to Figure 2C . In contrast, the barrier layer 5 of conductive construction surrounds the carrier 1 including the reflective coating, ie completely surrounds it. Therefore, with regard to the electrical contacting of the component 2 or 2B, the combination Figure 2C Public features can also be used Figure 2D The embodiments in .

[0094] Figure 3 The embodiment shown corresponds essentially to Figure 1A 1 shows an exemplary embodiment of a device 100. In contrast, it is schematically shown that the device 100 may have a further component 2B in addition to the component 2. In particular, the component 2 may be electrically conductively connected to the further component 2B. The component 2 may be an optoelectronic semiconductor chip which is provided for generating electromagnetic radiation during operation of the device 100. The further component 2B may be a protective diode, a further optoelectronic semiconductor chip or a chip with an integrated circuit. Figure 3 , the device 100 may have a plurality of such components 2 and / or a plurality of such further components 2B.

[0095] Figure 4 The embodiment schematically shown in FIG. 1 may basically correspond to Figure 2A , Figure 2B , Figure 2C or Figure 2D An exemplary embodiment of a component 100 is shown in a top view. Figure 4 It is schematically shown that the reflective coating 4 can have a plurality of spatially separated sub-regions 4T. The component 100 can also have a plurality of components 2 and / or further components 2B.

[0096] This patent application claims the priority of German patent application DE 10 2019 115 600.9, the disclosure content of which is incorporated herein by reference.

[0097] The present invention is not limited to these embodiments because of the description of the present invention based on the embodiments. On the contrary, the present invention includes every new feature and every combination of features, especially including every combination of features in the claims, even if this feature or this combination itself is not explicitly described in the claims or the embodiments.

[0098] Reference numerals list

[0099] 100 Optoelectronic Devices

[0100] 10. Housing

[0101] 10V Front side of the housing

[0102] 10R Back of the case

[0103] 10G Shell Frame

[0104] 1 Carrier, lead frame

[0105] 1M Mounting Surface

[0106] 1V Carrier / Lead Frame Top Side

[0107] 1R Back side of carrier / lead frame

[0108] 11 First subsection of the vector

[0109] 12 Second subsection of the vector

[0110] 2 Semiconductor chips / optoelectronic semiconductor chips

[0111] 2B Components / Semiconductor Chips

[0112] Front side of a 2V semiconductor chip

[0113] 2R Backside of semiconductor chip

[0114] 2S Side edge of semiconductor chip

[0115] 3 Cavity

[0116] 3B Bottom of cavity

[0117] 3M potting body

[0118] 3W Wall / external surface of cavity

[0119] 4 Reflective coating

[0120] Sub-areas of 4T reflective coating

[0121] 41 First sub-region of the reflective coating

[0122] 42 Second sub-region of the reflective coating

[0123] 5 Barrier layer

[0124] 51 The first sub-region of the barrier layer

[0125] 52 The second sub-region of the barrier layer

[0126] 6 Connection Layer

[0127] 6A Binder / Matrix Material

[0128] 6P reflective particles

[0129] 6L Electrically and / or thermally conductive particles

[0130] 7 Anti-corrosion layer

[0131] 8 Connection structure / bonding line

[0132] 81 First connection structure / connection column

[0133] 82 Second connection structure / connection column

[0134] 91 Through contact

[0135] 91A Metallization / printed conductor / connection surface

[0136] 91B Metallization / printed conductor / connection surface

[0137] 92 Through contact

[0138] 92A Metallization / printed conductor / connection surface

[0139] 92B Metallization / printed conductor / connection surface

Claims

1. An optoelectronic component (100) comprising a carrier (1) and a semiconductor chip (2) arranged on the carrier, wherein - the carrier has a mounting surface (1M), the mounting surface (1M) being provided with a reflective coating (4), - an anti-corrosion layer (7) is formed on the semiconductor chip, and the semiconductor chip is arranged between the reflective coating and the anti-corrosion layer in a vertical direction, the reflective coating is provided with a barrier layer (5), which is arranged locally between the semiconductor chip and the reflective coating in a vertical direction, - the barrier layer is formed of an inorganic material and serves as an additional anti-corrosion layer for the reflective coating, The reflective coating is completely covered by the barrier layer or is completely covered by the barrier layer except for the electrical contacts.

2. The optoelectronic device (100) according to claim 1, wherein: The barrier layer (5) has a three-dimensional network structure and is therefore implemented as an independent layer.

3. The optoelectronic device (100) according to claim 1, wherein: The inorganic material of the barrier layer (5) is an oxide material, a nitride material, a nitride oxide material or a fluoride material.

4. The optoelectronic device (100) according to claim 1, wherein: The inorganic material of the barrier layer (5) is a siloxane-based, polysiloxane-based or polysiloxane-type material.

5. The optoelectronic device (100) according to any one of claims 1 to 3, wherein: The inorganic material of the barrier layer (5) is a radiation-transmissive and electrically conductive material.

6. The optoelectronic device (100) according to any one of claims 1 to 3, wherein: The barrier layer (5) is an electrically insulating layer.

7. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: - the vertical layer thickness of the barrier layer (5) is between 1 nm and 100 nm, inclusive, and The vertical layer thickness of the anti-corrosion layer (7) is between 10 nm and 5000 nm, inclusive.

8. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: The semiconductor chip (2) is electrically conductively connected to the carrier (1) via at least one electrical connection structure (8), wherein the electrical connection structure extends in a vertical direction through the barrier layer (5) as far as the mounting surface (1M).

9. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: The carrier (1) is part of a housing (10) which is laterally surrounded by a non-metallic housing frame (10G), wherein - the housing frame has a cavity (3), the semiconductor chip (2) is arranged on the bottom surface (3B) of the cavity (3), and - The cavity has a surrounding outer surface (3W) covered by the barrier layer (5).

10. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: The semiconductor chip (2) is a volume emitter.

11. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: The semiconductor chip (2) is fixed to the barrier layer (5) by means of a connecting layer (6), wherein the connecting layer comprises reflective particles (6P) for reflecting electromagnetic radiation, particles for improving thermal conductivity or electrically conductive particles (6L).

12. The optoelectronic device (100) according to any one of claims 1 to 4, wherein: The anti-corrosion layer (7) and the barrier layer (5) are formed of the same material.

13. The optoelectronic device (100) according to claim 1, wherein - the reflective coating (4) is a silver coating, the semiconductor chip (2) is a volume emitter which is fixed to the barrier layer (5) by means of a connecting layer (6), the connecting layer comprises an adhesive matrix material (6A), the connecting layer being designed to reflect electromagnetic radiation emitted by the semiconductor chip during operation of the component, - the barrier layer (5) is electrically insulating, and The semiconductor chip (2) is electrically conductively connected to the carrier (1) via an electrical connecting structure (8), wherein the electrical connecting structure extends in a vertical direction through the barrier layer and directly adjoins the barrier layer in the process.

14. The optoelectronic component (100) according to any one of claims 1 to 4, comprising an electronic component (2B), wherein - the component is electrically conductively connected to the semiconductor chip (2), - said component is arranged on said barrier layer (5), - in top view, the component is completely covered by the anti-corrosion layer (7), and The component is a further optoelectronic semiconductor chip, an ESD chip or an IC chip.

15. A light source having a device (100) according to any one of claims 1 to 4, wherein: The semiconductor chip (2) is designed to generate electromagnetic radiation in the visible, infrared or ultraviolet spectral range during operation of the component.

16. A method for manufacturing an optoelectronic device (100), comprising the following steps: - providing a carrier (1) having a mounting surface (1M), said mounting surface (1M) being provided with a reflective coating (4), - applying a barrier layer (5) onto the reflective coating, wherein the barrier layer is formed from an inorganic material and serves as an additional anti-corrosion layer for the reflective coating, - placing a semiconductor chip (2) on the carrier, and - applying an anti-corrosion layer (7) onto the semiconductor chip, in - the semiconductor chip is arranged in a vertical direction between the reflective coating and the anti-corrosion layer, - the barrier layer is arranged locally between the semiconductor chip and the reflective coating in a vertical direction, and The reflective coating is completely covered by the barrier layer or is completely covered by the barrier layer except for the electrical contacts.

17. The method according to claim 16, in, The barrier layer (5) is applied to the reflective coating (4) by means of atomic layer deposition or by means of a coating method before the semiconductor chip (2) is mounted, so that the barrier layer is formed as a separate layer on the reflective coating.

18. The method according to claim 16, in, The barrier layer (5) is structured in such a way that the reflective coating (4) has a subregion (4T) not covered by the barrier layer in plan view, wherein the semiconductor chip (2) is electrically conductively connected to the carrier (1) at the uncovered subregion.

19. The method according to any one of claims 16 to 18, in, The carrier (1) is implemented as part of a housing (10), which is laterally surrounded by a non-metallic housing frame (10G), wherein The housing frame is formed by means of a potting method or a plastic molding method and has a cavity (3) for accommodating the semiconductor chip (2), and After the housing frame has been formed, the barrier layer (5) is applied onto the reflective coating (4) and onto the surrounding outer surface (3W) of the cavity, so that the outer surface is covered by the barrier layer.

20. The method according to any one of claims 16 to 18, in, The carrier (1) is implemented as part of a housing (10), which is laterally surrounded by a non-metallic housing frame (10G), wherein - the housing frame is formed by means of a potting method or a plastic molding method, and The barrier layer (5) is applied to the reflective coating (4) before the outer shell frame is formed, so that after the outer shell frame is formed, the barrier layer is partially surrounded by the outer shell frame.

Images