Method for manufacturing electronic device and electronic device

Abstract

A method for producing an electronic component is described, comprising the following steps: providing a moldable substrate (1), applying at least one semiconductor chip (3) to a first main surface (2) of the moldable substrate (1), introducing the semiconductor chip (3) into the moldable substrate (1) by deforming the moldable substrate (1) so that the semiconductor chip (3) is embedded in the moldable substrate (1) starting from the first main surface (2), wherein at least one electrical contact (7) of the semiconductor chip (3) is freely accessible from the outside.

Description

Technical Field

[0001] A method for producing an electronic component and an electronic component are described. Summary of the Invention

[0002] A simplified method for producing an electronic component should be provided. Furthermore, an electronic component that is particularly easy to produce should be provided. Finally, the electronic component should have particularly small dimensions and / or be designed to be at least partially flexible.

[0003] These objects are achieved by a method having the steps of claim 1 and an electronic component having the features of claim 13 .

[0004] Advantageous embodiments and developments of the method for producing an electronic component and of the electronic component are specified in the respective dependent claims.

[0005] According to one embodiment of the method for manufacturing an electronic device, a moldable substrate is provided. The moldable substrate is preferably designed as a thin moldable layer or thin moldable film. The moldable substrate particularly preferably has a main extension plane. A first main surface of the moldable substrate is arranged parallel to the main extension plane of the substrate. The first main surface of the substrate preferably lies opposite a second main surface.

[0006] According to another embodiment of the method, at least one semiconductor chip is applied to the first main surface of the moldable substrate. Particularly preferably, a plurality of semiconductor chips are applied to the first main surface of the moldable substrate at a distance from one another.

[0007] According to another embodiment of the method, the semiconductor chip is introduced into the moldable substrate by deforming the moldable substrate so that the semiconductor chip is embedded in the moldable substrate starting from the first main surface. In this case, at least one electrical contact of the semiconductor chip is freely accessible from the outside.

[0008] Particularly preferably, the outer surface of the semiconductor chip, with the exception of the main surface on which the at least one electrical contact is arranged, is surrounded by the material of the moldable substrate in a form-fitting manner. The main surface of the semiconductor chip on which the at least one electrical contact of the semiconductor chip is arranged is preferably exposed at the first main surface of the moldable substrate.

[0009] According to a particularly preferred embodiment of the method, the sculptable substrate is an uncrosslinked or partially crosslinked polymer film. Particularly preferably, the sculptable substrate is an uncrosslinked or partially crosslinked silicone film.

[0010] An uncrosslinked or partially crosslinked polymer film comprises a large number of monomers. In the uncrosslinked state of the polymer film, these monomers are not chemically linked to one another. When these monomers polymerize, for example, by UV light or heat, the monomers chemically react with one another and form chemical bonds. In the present context, the term "partially crosslinked" means that the monomers of the polymer film are not completely polymerized. The polymerization of the monomers in the polymer film contributes to the mechanical stability of the polymer film. Generally, the mechanical stability of a polymer film increases as the proportion of crosslinked monomers increases. In other words, the fewer crosslinked monomers, the easier the polymer film is to shape.

[0011] As the polymerization of the monomers of the polymer film proceeds, most of the monomers are connected to each other by chemical bonds. This state of the polymer film is hereinafter referred to as "completely cross-linked."

[0012] According to a preferred embodiment of the method, the semiconductor chip is an optoelectronic semiconductor chip, preferably a radiation-emitting semiconductor chip, particularly preferably having a flip-chip design. The radiation-emitting semiconductor chip is particularly preferably a light-emitting diode chip. A radiation-emitting semiconductor chip having a flip-chip design is also referred to herein and hereinafter as a "flip chip."

[0013] The radiation-emitting semiconductor chip particularly preferably comprises an epitaxial semiconductor layer sequence having an active region suitable for generating electromagnetic radiation during operation. For example, the epitaxial semiconductor layer sequence of the radiation-emitting semiconductor chip is based on a nitride semiconductor material. Nitride semiconductor materials are nitrogen-containing compound semiconductor materials, for example from In x Al y Ga 1-x-y Materials of the N series, where 0≤x≤1, 0≤y≤1 and x+y≤1. Such epitaxial semiconductor layer sequences generally have an active region which generates electromagnetic radiation in the ultraviolet to blue spectral range.

[0014] Furthermore, it is also possible that the epitaxial semiconductor layer sequence of the radiation-emitting semiconductor chip is based on a phosphide semiconductor material. A phosphide semiconductor material is a phosphorus-containing compound semiconductor material, for example from In x Al y Ga 1-x-y Materials of the P series, where 0≤x≤1, 0≤y≤1 and x+y≤1. Such epitaxial semiconductor layer sequences generally have an active region which generates electromagnetic radiation in the green to red spectral range.

[0015] Typically, an epitaxial semiconductor layer sequence is epitaxially grown on a growth substrate. The epitaxial semiconductor layer sequence is often arranged on a carrier element for mechanical stabilization. For example, the growth substrate serves as the carrier element. Furthermore, the epitaxial semiconductor layer sequence can also be transferred from the growth substrate to the carrier element.

[0016] The carrier element is preferably transparent at least to the electromagnetic radiation generated in the active region of the epitaxial semiconductor layer sequence. A radiation-emitting semiconductor chip having a flip-chip design emits the electromagnetic radiation generated in the active region preferably via the main surface of the carrier element and the side surfaces of the carrier element. In other words, the main surface of the carrier element and the side surfaces of the carrier element form the radiation exit surface of the flip-chip.

[0017] The radiation exit area of ​​the flip chip is particularly preferably free of electrical contacts.The electrical contacts of the radiation-emitting semiconductor chip of flip-chip design are preferably arranged on a main area of ​​the epitaxial semiconductor layer sequence facing away from the carrier element.

[0018] For example, the epitaxial semiconductor layer sequence of a radiation-emitting semiconductor chip having a flip-chip design is based on a nitride semiconductor material. In this case, the carrier element is preferably the growth substrate for the epitaxial semiconductor layer sequence. The growth substrate particularly preferably comprises sapphire or carbide or consists of one of these two materials. Both materials are advantageously generally transparent to blue light, which is typically generated in the active region of an epitaxial semiconductor layer sequence based on a nitride semiconductor material.

[0019] For example, the epitaxial semiconductor layer sequence of a radiation-emitting semiconductor chip with a flip-chip design is based on a phosphide semiconductor material. In this case, the carrier element is preferably different from the growth substrate of the epitaxial semiconductor layer sequence. The growth substrate particularly preferably comprises GaAs or consists of this material, while the flip-chip carrier element preferably comprises sapphire or carbide or consists of sapphire or carbide. Both materials are advantageously generally transparent to green to red light, which is typically generated in the active region of an epitaxial semiconductor layer sequence based on a phosphide semiconductor material.

[0020] According to another embodiment of the method, the semiconductor chip is a radiation-emitting semiconductor chip with a flip-chip design. In this embodiment, before the semiconductor chip is introduced into the moldable substrate, the semiconductor chip is applied with the first main surface of the carrier element to the first main surface of the moldable substrate. Particularly preferably, after the introduction of the moldable substrate, the electrical contacts of the semiconductor chip are flush with the first main surface of the moldable substrate. In this embodiment, the moldable substrate is particularly preferably designed to be transparent to at least the electromagnetic radiation of the active region. For example, the moldable substrate transmits 90%, preferably 95%, of the electromagnetic radiation of the active region.

[0021] According to another embodiment, the semiconductor chips are introduced into the moldable substrate by pressing with a plate or roller. To this end, the semiconductor chips are first applied to the first main surface of the moldable substrate. Particularly preferably, a plurality of semiconductor chips are applied side by side, spaced apart, to the first main surface of the moldable substrate. When using a plate, such as a metal plate, the plate is placed over the semiconductor chips along the first main surface and pressed against them with as uniform a pressure as possible, thereby pressing the semiconductor chips into the moldable substrate. Particularly preferably, the plate allows the semiconductor chips to be introduced into the moldable substrate as uniformly and simultaneously as possible.

[0022] When a roller is used, the roller rolls over the semiconductor chip with as uniform a pressure as possible, thereby pressing the semiconductor chip into the moldable substrate. The roller can usually also introduce the semiconductor chip into the moldable substrate as uniformly as possible.

[0023] According to another embodiment of the method, the roller and / or the plate has a structuring. The structuring can advantageously compensate for height differences.

[0024] According to another embodiment of the method, a carrier having at least one electrical connection point on a first main surface is provided. After the semiconductor chip has been introduced into the moldable substrate, the carrier is applied to the first main surface of the moldable substrate such that at least one electrical contact of the semiconductor chip is in electrical contact with the electrical connection point. Particularly preferably, the electrical connection point of the carrier is in direct contact with the electrical contact of the semiconductor chip.

[0025] For example, the carrier is a leadframe, which includes the at least one electrical connection point. Preferably, the electrical connection point is integrally formed with the leadframe. The leadframe, for example, comprises or is formed from metal. For example, the leadframe comprises or is formed from copper. Furthermore, the leadframe may also have a core made of copper that is fully or partially coated with silver.

[0026] Furthermore, the carrier can be a printed circuit board, which comprises the at least one electrical connection point. In addition to the electrical connection point, the printed circuit board generally comprises at least one conductor track.

[0027] According to another embodiment of the method, the carrier is pressed into the moldable substrate, starting from the first main surface. This is preferably done, in particular, when the carrier is a lead frame or a printed circuit board. Preferably, in this embodiment, the moldable substrate is a partially crosslinked or uncrosslinked polymer film. Particularly preferably, after the carrier has been pressed into the moldable substrate, the partially crosslinked or uncrosslinked polymer film is completely crosslinked, so that the carrier and the moldable substrate are connected to each other in a mechanically stable manner.

[0028] According to another embodiment, the carrier can also be an uncrosslinked or partially crosslinked polymer film. In this case, the polymer film used as a carrier can be transparent to electromagnetic radiation, in particular the electromagnetic radiation of the semiconductor chip. In addition, the polymer film used as a carrier can also be opaque to electromagnetic radiation, in particular the electromagnetic radiation of the semiconductor chip. For example, the polymer film used as a carrier is configured to be black. Particularly preferably, the moldable substrate and the carrier are uncrosslinked or partially crosslinked polymer films, for example uncrosslinked or partially crosslinked silicone films. In this embodiment of the method, the two uncrosslinked or partially crosslinked polymer films are particularly preferably connected to each other in a mechanically stable manner by complete crosslinking. In this way, flexible, radiation-transparent components with very small dimensions can be easily produced.

[0029] According to another embodiment of the method, the electrical contact element is pressed through a polymer film serving as a carrier, wherein the electrical contact element is freely accessible from the outside. In this case, the polymer film serving as a carrier can be uncrosslinked, partially crosslinked or fully crosslinked.

[0030] According to another embodiment of the method, an adhesive is applied between the moldable substrate and the carrier. In this way, the mechanical connection between the moldable substrate and the carrier can be advantageously increased.

[0031] According to another embodiment of the method, an adhesive is applied between the electrical connection point and the moldable substrate, and the carrier is removed again, with the electrical connection point remaining on the moldable substrate. The carrier is, for example, a film or glass carrier. The carrier is particularly preferably coated with polytetrafluoroethylene to facilitate removal. In this embodiment, the adhesive is particularly preferably an anisotropic, electrically conductive adhesive.

[0032] Furthermore, the electrical connection points can be applied to the first main surface of the substrate by means of a photoresist mask, so that at least one electrical contact of the semiconductor chip is in electrical contact with the electrical connection points. In this embodiment, the moldable substrate is preferably first cured.

[0033] A photoresist layer is then applied over the entire surface of the first major surface of the substrate and exposed and developed so that openings with the desired connection point structure are formed in the photoresist layer. A metal layer is then evaporated onto the structured photoresist layer, which serves as a photoresist mask. The photoresist mask is then removed again, so that connection points are formed on the first major surface of the substrate. The metal layer comprises, for example, gold or copper, or is formed from one of these materials. In particular, the use of a photoresist mask allows for simple and precise electrical contacting of very small semiconductor chips.

[0034] According to another embodiment of the method, the moldable substrate is cured so that it has mechanically stable properties. In particular, the substrate has no or only very low moldability after curing. Preferably, the curing takes place at the end of the method. Preferably, an uncrosslinked or partially crosslinked polymer film is used as the moldable substrate. The uncrosslinked or partially crosslinked polymer film is typically cured by complete crosslinking. According to one embodiment of the method, the uncrosslinked or partially crosslinked polymer film is completely crosslinked using UV light and / or heat.

[0035] The method described herein is advantageously suitable for simple packaging and mechanical stabilization of semiconductor chips, in particular radiation-emitting semiconductor chips. Furthermore, various possibilities for simple electrical contacting are described. The method is simplified and therefore only has very low costs.

[0036] The method described herein enables the manufacture of electronic devices. The electronic devices are described in more detail below. Features and embodiments currently disclosed only in conjunction with the method can also be used to construct the electronic devices, and vice versa.

[0037] According to one embodiment, the electronic component includes one or more semiconductor chips. Particularly preferably, the electronic component includes one or more radiation-emitting semiconductor chips. For example, the electronic component includes at least one semiconductor chip that emits red light, at least one semiconductor chip that emits green light, and at least one semiconductor chip that emits blue light.

[0038] According to another embodiment, the electronic component comprises a substrate, which is configured as a fully cross-linked polymer film. Particularly preferably, the fully cross-linked polymer film is a fully cross-linked silicone film.

[0039] According to a further embodiment of the electronic component, the semiconductor chip is embedded in the substrate, starting from the first main area of ​​the substrate, wherein at least one electrical contact of the semiconductor chip is freely accessible from the outside.

[0040] According to a preferred embodiment of the electronic component, the semiconductor chip is a radiation-emitting semiconductor chip having a flip-chip design. The radiation-emitting semiconductor chip emits electromagnetic radiation from a radiation exit surface facing away from the electrical contacts. Particularly preferably, the electrical contacts of the semiconductor chip are flush with the first main surface of the substrate.

[0041] According to a preferred embodiment of the electronic component, the semiconductor chip is a radiation-emitting flip chip, and the radiation exit area of ​​the flip chip is free of electrical contacts.

[0042] According to a further embodiment of the electronic component, at least one electrical connection point is arranged on the first main surface of the substrate, such that at least one electrical contact of the semiconductor chip is electrically contacted with the electrical connection point.

[0043] According to another embodiment of the electronic device, the first main surface of the substrate is mechanically stably connected to the carrier. For example, the carrier is a fully cross-linked polymer film. The carrier can also be a printed circuit board or a lead frame.

[0044] Further advantageous embodiments and developments of the method and the electronic component result from the exemplary embodiments described below in conjunction with the figures. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 、 Figures 3 to 6 Schematic cross-sectional views showing method stages of a method for manufacturing an electronic device according to an embodiment.

[0046] Figure 2 A schematic cross-sectional view of a radiation-emitting semiconductor chip of flip-chip design is shown.

[0047] Figure 7 A schematic cross-sectional view of an electronic device according to an embodiment is shown.

[0048] Figures 8 and 9 Schematic cross-sectional views show method stages of a method for producing an electronic component according to another embodiment.

[0049] Figures 10 to 13 Schematic cross-sectional views show method stages of a method for producing an electronic component according to another embodiment.

[0050] Figure 14 The schematic cross-sectional view of FIG. 1 shows an electronic device according to another embodiment.

[0051] Figures 15 to 17 Schematic cross-sectional views show method stages of a method for producing an electronic component according to another embodiment.

[0052] Elements that are identical, of the same type, or have the same function are provided with the same reference numerals in the figures. The figures and the dimensional ratios of the elements shown in the figures are not to be considered to scale. On the contrary, individual elements, in particular layer thicknesses, may be shown exaggerated for better illustration and / or understanding. DETAILED DESCRIPTION

[0053] In accordance with Figures 1 to 6 In the method of the embodiment of the present invention, a moldable substrate 1 is provided in a first step. For example, the moldable substrate 1 is a non-crosslinked or partially crosslinked polymer film, particularly preferably a non-crosslinked or partially crosslinked silicone resin film.

[0054] A plurality of semiconductor chips 3 are applied to the first main surface 2 of the moldable substrate 1 at a distance from one another ( Figure 1 ), in the present case, for reasons of clarity, only two semiconductor chips 3 are shown. The semiconductor chips 3 can be, for example, electronic semiconductor chips or optoelectronic semiconductor chips. In the present case, the semiconductor chips 3 are radiation-emitting semiconductor chips of flip-chip design.

[0055] The radiation-emitting semiconductor chip 3 of flip-chip design comprises an epitaxial semiconductor layer sequence 4 which is epitaxially grown on a growth substrate ( Figure 2 ). The growth substrate serves as a carrier element 5 for the epitaxial semiconductor layer sequence 4 and mechanically stabilizes the epitaxial semiconductor layer sequence 4. The epitaxial semiconductor layer sequence 4 has an active region 6 that generates electromagnetic radiation during operation of the semiconductor chip 3. In the present case, the epitaxial semiconductor layer sequence 4 is based on a nitride semiconductor material and generates visible light from the blue spectral range.

[0056] In the present case, the carrier element 5 is based on sapphire or carbide and is transparent to the blue radiation generated in the active region 6. The semiconductor chip 3 emits the blue radiation generated during operation from the exposed surface of the carrier element 5, that is, from the main surface facing away from the epitaxial semiconductor layer sequence 4 and laterally. The electrical contacts 7 of the semiconductor chip 3 are arranged on the epitaxial semiconductor layer sequence 4, while the radiation exit area 20 of the semiconductor chip 3 is free of electrical contacts 7.

[0057] Furthermore, it is also possible for a radiation-emitting semiconductor chip 3 of flip-chip design to have an epitaxial semiconductor layer sequence 4 based on a phosphide semiconductor material and generating visible light in the red to green spectral range. In this case, the carrier element 5 also preferably comprises sapphire or carbide. However, the carrier element 5 is generally not a growth substrate.

[0058] A radiation-emitting semiconductor chip 3 of flip-chip design is applied with its first main surface 9 to the first main surface 2 of the moldable substrate 1. In this case, the electrical contacts 7 of the semiconductor chip 3 face away from the first main surface 9 ( Figure 1 ).

[0059] In the next step, the semiconductor chips 3 are pressed into the moldable substrate 1 using a plate 8, such as a metal plate. In this case, it is particularly preferred to apply a force F that is as constant as possible to the metal plate, so that the radiation-emitting semiconductor chips 3 are pressed uniformly and simultaneously into the moldable substrate 1 ( Figure 3 ).

[0060] The semiconductor chip 3 is then embedded in the moldable substrate 1, wherein the electrical contacts 7 of the semiconductor chip 3 are freely accessible from the outside. In the present case, the electrical contacts 7 of the semiconductor chip 3 are flush with the moldable substrate 1 (see Figure 4 The surface areas between the electrical contacts 7 are usually also free of the moldable substrate 1 . Each semiconductor chip 3 is surrounded by the moldable substrate 1 in a form-fitting manner on the remaining surface.

[0061] In a further step, the carrier 10 is now applied to the first main face 2 ( Figure 5 ). For example, the carrier 10 is a glass plate coated with polytetrafluoroethylene. Electrical connection points 12 and / or conductor tracks are applied to the first main surface 11 of the carrier 10, which in the present case is coated with polytetrafluoroethylene. The carrier 10 is applied to the first main surface 2 of the moldable substrate 1 so that at least one electrical connection point 12 of the carrier 10 is in electrical contact with the electrical contact 7 of the semiconductor chip 3 ( Figure 6 ).

[0062] In the next step, in the present embodiment, the carrier 10 is removed again. This removal is facilitated by the polytetrafluoroethylene coating. The moldable substrate 1 is then cured. In a subsequent step, the composite formed by the substrate 1 and the semiconductor chips 3 is typically separated into a plurality of electronic components.

[0063] In the method according to the present embodiment, an adhesive layer 13 is applied between the electrical connection points 12 on the carrier 10 and the first main face 2 of the moldable substrate 1 .

[0064] according to Figure 7 The electronic device of the embodiment in FIG. 1 has two semiconductor chips 3 embedded in a substrate 1. As semiconductor chips 3, radiation-emitting semiconductor chips with a flip-chip design are used. For example, Figure 1 A corresponding radiation-emitting semiconductor chip 3 having a flip-chip design is described.

[0065] In the present case, the substrate 1 is a fully cross-linked polymer film, in particular a fully cross-linked silicone film. The semiconductor chip 3 is embedded in the substrate 1 starting from the first main surface 2 of the substrate 1. The rear electrical contacts 7 of the semiconductor chip 3 are electrically conductively connected to electrical connection points 12, via which current can be applied to the semiconductor chip 3 during operation.

[0066] During operation, the radiation-emitting semiconductor chip 3 generates electromagnetic radiation, for example blue light, which is emitted into the fully cross-linked polymer film via the radiation exit surface 20. The fully cross-linked polymer film is transparent to the electromagnetic radiation, for example the blue light of the semiconductor chip 3, so that the device emits light from the surface of the polymer film.

[0067] In accordance with Figure 8 and Figure 9 In the method of the embodiment, firstly, the method is executed based on Figures 1 to 3 Describe the method steps.

[0068] In the next step, a carrier 10 is provided, which is also an uncrosslinked or partially crosslinked polymer film, in particular an uncrosslinked or partially crosslinked silicone film. Electrical connection points 12 and conductor tracks are applied to a first main surface 11 of the uncrosslinked or partially crosslinked polymer film serving as carrier 10.

[0069] The uncrosslinked or partially crosslinked polymer film is applied with the first main face 11 to the first main face 2 of the sculptable substrate 1 ( Figure 8 ). The two polymer films are then completely cross-linked. Here, the two polymer films are connected to each other in a mechanically stable manner. In the present case, the two polymer films are transparent to the electromagnetic radiation generated in the active region of the semiconductor chip 3. The polymer film used as carrier 10 can also be designed to be radiation-impermeable.

[0070] exist Figure 9 In the next step, which is schematically illustrated, electrical contact elements 14 (in the present case, metal pins) are pressed through the now completely cross-linked polymer film, which serves as carrier 10, so that electrical contact is made to the electrical conductor tracks on the polymer film serving as carrier 10. Electrical contact elements 14 have contact areas 15, which are arranged on the top side of the polymer film serving as carrier 10. Electrical contact can be made to the finished electronic component via contact areas 15.

[0071] The electrical contact element 14 can also be introduced into the uncrosslinked or partially crosslinked polymer film serving as carrier 10 before both polymer films are completely crosslinked.

[0072] In accordance with Figures 10 to 13 In the method of the embodiment of the present invention, first perform the Figures 1 to 3 The method steps described are then performed to solidify the moldable substrate 1 ( Figure 10 ).

[0073] In order to produce an electrical contact structure comprising at least one electrical connection point 12, a photoresist layer 16 is first applied over the entire surface of the first main surface 2 of the substrate 1 and exposed to light through a mask (not shown). Figure 11 ).

[0074] The photoresist layer 16 is then developed so that the regions between the electrical contacts 7 of the semiconductor chip 3 configured as a flip chip are covered by the photoresist layer 16, while the remaining first main surface 2 of the substrate 1 is free of the photoresist layer 16 ( Figure 12 ). The structured photoresist layer serves as a photoresist mask 16.

[0075] In the next step, a metal layer 17 is first deposited over the entire surface of the structured photoresist layer 16, for example by sputtering ( Figure 13 ). The metal layer 17 includes, for example, gold or copper, or is formed from one of these materials.

[0076] The photoresist mask 16 is then removed again, so that electrical connection points 12 and / or conductor tracks are formed on the first main surface 2 of the substrate 1. In a next step, the electrical connection points 12 and / or conductor tracks are mechanically reinforced by electrodeposition of a further metal layer 18.

[0077] You can use the already based Figures 10 to 13 Described method to manufacture according to Figure 14 The electronic device of the embodiment.

[0078] according to Figure 14 The electronic device of the exemplary embodiment in FIG. 1 has two radiation-emitting semiconductor chips 3 of flip-chip design, as has already been described based on the Figure 2 As described by way of example, the rear-side electrical contact 7 of the semiconductor chip 3 is electrically conductively connected to the electrical connection point 12 and / or the conductor track. In the present case, the electrical connection point 12 and / or the conductor track are mechanically reinforced by an electrodeposited further metal layer 18 .

[0079] In accordance with Figures 15 to 17 In the method of the embodiment, the execution is performed again based on Figures 1 to 3 The method steps described ( Figure 15 ).

[0080] In a next step, an adhesive 13 is applied in the form of a thin layer to the first main face 2 of the sculptable substrate 1 ( Figure 16 ).

[0081] In a next step, a lead frame 19 is now applied to the first main face 2 of the moldable substrate 1 , which is provided with the adhesive 13 . The lead frame 19 is then pressed into the moldable substrate 1 .

[0082] In the next step, the uncrosslinked or partially crosslinked polymer film serving as the moldable substrate 1 is cured in such a way that it is completely crosslinked. The adhesive 13 is also cured. In this way, the lead frame 19 is connected to the substrate 1 in a form-fitting and mechanically stable manner ( Figure 17 ).

[0083] according to Figures 15 to 17 The method of the embodiment can also be carried out without the adhesive layer 13. In this case, the lead frame 19 is pressed directly into the first main face 2 of the moldable substrate 1 and connected to the polymer film in a mechanically stable manner by complete crosslinking of the polymer film.

[0084] Instead of the lead frame 19, in accordance with Figures 15 and 16 A printed circuit board may also be used in the method of an embodiment.

[0085] This application claims priority from German application DE 102019120717.7, the disclosure content of which is incorporated herein by reference.

[0086] The invention is not limited to the exemplary embodiments due to the description based on these exemplary embodiments. On the contrary, the invention encompasses every novel feature and every combination of features, which in particular includes every combination of features in the claims, even if this feature or this combination itself is not explicitly specified in the claims or exemplary embodiments.

[0087] Reference Signs List

[0088] 1 (Shapeable) substrate

[0089] 2. First main surface of the (modelable) substrate

[0090] 3 Semiconductor chips

[0091] 4 Epitaxial semiconductor layer sequence

[0092] 5 Carrier elements

[0093] 6 Active area

[0094] 7 Electrical contact

[0095] 8 boards

[0096] 9 First main surface of semiconductor chip

[0097] 10 carriers

[0098] 11 First main surface of the carrier

[0099] 12 electrical connection points

[0100] 13 Adhesive layer

[0101] 14 Electrical contact elements

[0102] 15 contact surface

[0103] 16 Photoresist layer

[0104] 17 Metal Layer

[0105] 18 Additional Metal Layers

[0106] 19 Lead frame

[0107] 20 Radiation exit surface.

Claims

1. A method for manufacturing an electronic device, comprising the following steps: - providing a shapeable substrate (1), - applying at least one semiconductor chip (3) to the first main surface (2) of the moldable substrate (1), - introducing the semiconductor chip (3) into the moldable substrate (1) by deforming the moldable substrate (1) such that the semiconductor chip (3) is embedded in the moldable substrate (1) starting from the first main surface (2), wherein at least one electrical contact (7) of the semiconductor chip (3) is freely accessible from the outside, wherein the semiconductor chip is a radiation-emitting flip chip and the radiation exit surface (20) of the flip chip (3) is free of electrical contacts, - providing a carrier (10) having at least one electrical connection point (12) on a first main surface (11), and - after the semiconductor chip (3) has been introduced into the moldable substrate (1), applying the carrier (10) to the first main surface (2) of the moldable substrate (1) in such a way that at least one electrical contact (7) of the semiconductor chip (3) is in electrical contact with the electrical connection point (12), The moldable substrate (1) and the carrier (10) are respectively uncrosslinked or partially crosslinked polymer films, and the carrier (10) and the moldable substrate (1) are mechanically stably connected to each other by complete crosslinking.

2. The method according to claim 1, wherein - before introducing the semiconductor chip (3) into the moldable substrate (1), applying the semiconductor chip (3) with its first main surface (9) to the first main surface (2) of the moldable substrate (1), and The electrical contact (7) of the semiconductor chip (3) is flush with the first main surface (2) of the moldable substrate (1) after the semiconductor chip has been introduced into the moldable substrate (1).

3. The method according to any one of the preceding claims, The semiconductor chip (3) is introduced into the moldable substrate (1) by pressing with a plate (8) or a roller.

4. The method according to claim 1, wherein - the carrier (10) is a lead frame (19) or a printed circuit board, which comprises the at least one electrical connection point (12), and - Pressing the carrier (10) into the moldable substrate (1).

5. The method according to claim 1, The electrical contact element (14) is pressed through the polymer film serving as a carrier (10) so that the electrical contact element (14) is freely accessible from the outside.

6. The method according to any one of claims 1 to 2, An adhesive (13) is applied between the moldable substrate (1) and the carrier (10).

7. The method according to claim 1, wherein - applying an adhesive (13) between the electrical connection points (12) and the moldable substrate (1), and The carrier (10) is removed again, wherein the electrical connection points (12) remain on the moldable substrate (1).

8. The method according to any one of claims 1 to 2, Electrical connection points (12) are applied to the first main surface (2) of the substrate (1) by means of a photoresist mask (16), so that at least the freely accessible electrical contacts (7) of the semiconductor chip (3) are electrically contacted with the electrical connection points (12).

9. An electronic device comprising: - a semiconductor chip (3), and - a substrate (1) which is constructed as a fully cross-linked polymer film, wherein The semiconductor chip (3) is embedded in the substrate (1) starting from the first main surface (2) of the substrate (1), wherein at least one electrical contact (7) of the semiconductor chip (3) is freely accessible from the outside, wherein the semiconductor chip is a radiation-emitting flip chip and the radiation exit surface (20) of the flip chip (3) has no electrical contacts, and a carrier (10) having at least one electrical connection point (12) on a first main face (11), wherein the carrier (10) is a fully crosslinked polymer film, wherein after the semiconductor chip (3) has been introduced into the substrate (1), the carrier (10) is applied to the first main surface (2) of the substrate (1) in such a way that at least one electrical contact (7) of the semiconductor chip (3) is in electrical contact with the electrical connection point (12), The carrier (10) and the substrate (1) are mechanically stably connected to each other by complete cross-linking.

10. The electronic device according to claim 9, The electrical contact (7) of the semiconductor chip (3) is flush with the first main surface (2) of the substrate (1).

11. The electronic device according to any one of claims 9 to 10, At least one electrical connection point (12) is arranged on the first main surface (2) of the substrate (1), so that at least one electrical contact (7) of the semiconductor chip (3) is in electrical contact with the electrical connection point (12).

12. The electronic device according to any one of claims 9 to 10, The first main surface (2) of the substrate (1) is mechanically stably connected to a carrier (10).

Images