Substrate processing apparatus, control method of purge gas and cleaning method of vacuum transfer chamber

Abstract

Provided is a substrate processing apparatus and the like capable of suppressing particle deposition by eliminating gas stagnation. The substrate processing apparatus includes a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and a side surface between the top surface and the bottom surface, the side surface having a first side surface and a second side surface opposite the first side surface; a transfer robot for transferring a substrate disposed in the vacuum transfer chamber; a load lock module connected to the first side surface; a pipe connected to a purge gas supply source for supplying a purge gas into the vacuum transfer chamber; at least one gas inlet provided on the top surface in the vicinity of the second side surface and connected to the pipe; and at least one gas outlet provided on the bottom surface in the vicinity of the first side surface of the vacuum transfer chamber and connected to an exhaust pump for exhausting the purge gas supplied into the vacuum transfer chamber.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a method for controlling purge gases, and a method for cleaning a vacuum transport chamber. Background Technology

[0002] In a substrate processing apparatus, a purge gas, such as flowing N2 gas, is used as a purge gas to suppress particle generation in a vacuum transport chamber that transports a substrate to a processing chamber for substrate processing. For example, a method is employed where purge gas is supplied from the side of the vacuum transport chamber opposite to the side connected to the load locking module, and discharged from the side connected to the load locking module. When the substrate is transported out of the processing chamber, for example, under a reduced-pressure atmosphere between the processing chamber and the vacuum transport chamber, the purge gas purges the atmosphere in the processing chamber that is carried out in response to the opening of a gate and the movement of the robotic arm of the transport mechanism. Particles in the vacuum transport chamber are discharged from the exhaust port by the purge gas flow atmosphere.

[0003] Furthermore, to suppress the generation of particles in the vacuum conveying chamber, one proposed method is to add an auxiliary module for cleaning the membrane generated by residual gas adhering to the robotic arm of the conveying mechanism (Patent Document 1). Additionally, to remove particles deposited in the receiving chamber, one proposed method is to apply a high voltage by setting electrodes in the substrate conveying section, thereby causing electrostatic stress to act on the inner surface of the receiving chamber to detach the deposited impurities, which are then discharged using airflow (Patent Document 2).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2009-164213

[0007] Patent Document 2: Japanese Patent Application Publication No. 2005-317783 Summary of the Invention

[0008] The problem that the invention aims to solve

[0009] This invention provides a substrate processing apparatus capable of suppressing particle accumulation by eliminating gas retention, a method for controlling purging gas, and a method for cleaning a vacuum transport chamber.

[0010] Technical means for solving problems

[0011] One aspect of the substrate processing apparatus of the present invention includes: a vacuum transport chamber having a top surface, a bottom surface opposite to the top surface, and a side surface between the top and bottom surfaces, the side surface having a first side surface and a second side surface opposite to the first side surface; a transport robotic arm for transporting a substrate disposed within the vacuum transport chamber; a load locking module connected to the first side surface; a piping connected to a purge gas supply source for supplying purge gas into the vacuum transport chamber; at least one air inlet disposed on the top surface near the second side surface and connected to the piping; and at least one exhaust port disposed on the bottom surface near the first side surface of the vacuum transport chamber and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transport chamber.

[0012] The effects of the invention

[0013] According to the present invention, particle accumulation can be suppressed by eliminating gas retention. Attached Figure Description

[0014] Figure 1 This is a cross-sectional view showing an example of the substrate processing apparatus in the first embodiment of the present invention.

[0015] Figure 2 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in the first embodiment.

[0016] Figure 3 This is a diagram illustrating an example of the timing of the purge gas in the first embodiment.

[0017] Figure 4 This is a diagram illustrating an example of the experimental results in the first embodiment.

[0018] Figure 5 This is a diagram illustrating an example of the experimental results in the first embodiment.

[0019] Figure 6 This is a diagram representing one example of the experimental results in the reference example.

[0020] Figure 7 This is a diagram representing one example of the experimental results in the reference example.

[0021] Figure 8 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Variation 1.

[0022] Figure 9 This is a diagram illustrating an example of the timing of the purging gas in Modification 1.

[0023] Figure 10 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Modification 2.

[0024] Figure 11 This is a diagram illustrating an example of the timing of the purging gas in Modification Example 2.

[0025] Figure 12 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Variation 3.

[0026] Figure 13 This is a diagram illustrating an example of the timing of the purging gas in Modification 3.

[0027] Figure 14 This is a diagram illustrating an example of the valve opening and closing sequence in the second embodiment.

[0028] Figure 15 This is a diagram illustrating an example of the experimental results in the second embodiment.

[0029] Figure 16 This is a diagram illustrating an example of the experimental results in the second embodiment.

[0030] Figure 17 This is a diagram illustrating an example of the experimental results in the second embodiment.

[0031] Figure 18 This is a diagram illustrating an example of the experimental results in the second embodiment.

[0032] Figure 19 This is a diagram illustrating an example of the experimental results in the second embodiment.

[0033] Figure 20 This is a diagram illustrating an example of the valve opening and closing sequence in variation 4.

[0034] Figure 21 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 5.

[0035] Figure 22 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 6.

[0036] Figure 23 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 7.

[0037] Figure 24 This is a diagram illustrating an example of the valve opening and closing sequence in Variation Example 8.

[0038] Figure 25 This is a diagram illustrating an example of the valve opening and closing sequence in variation 9.

[0039] Figure 26 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 10.

[0040] Figure 27 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 11.

[0041] Figure 28 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 12.

[0042] Figure 29 This is a diagram showing an example of the piping system leading to the vacuum delivery chamber in Modification 13.

[0043] Figure 30 This is a diagram illustrating an example of the valve opening and closing sequence in variation 13.

[0044] Figure 31 This is a diagram illustrating an example of the experimental results in variation 13.

[0045] Figure 32 This is a diagram illustrating an example of the experimental results in variation 13.

[0046] Figure 33 This is a diagram illustrating an example of the experimental results in variation 13.

[0047] Figure 34 This is a diagram illustrating an example of the experimental results in variation 13.

[0048] Figure 35 This is a diagram illustrating an example of the experimental results in variation 13.

[0049] Figure 36 This is a diagram illustrating an example of the valve opening and closing sequence in variation 14.

[0050] Figure 37 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 15.

[0051] Figure 38 This is a diagram illustrating an example of the valve opening and closing sequence in variation 16.

[0052] Figure 39 This is a diagram illustrating an example of the valve opening and closing sequence in variation 17.

[0053] Figure 40 This is a diagram illustrating an example of the valve opening and closing sequence in Variation 18.

[0054] Figure 41 This is a diagram illustrating an example of the valve opening and closing sequence in variation 19.

[0055] Figure 42 This is a diagram illustrating an example of the valve opening and closing sequence in variation 20.

[0056] Figure 43 This is a diagram illustrating an example of the valve opening and closing sequence in variation 21.

[0057] Figure 44 This is a diagram illustrating an example of the valve opening and closing sequence in variation 22.

[0058] Figure 45 This is a top view showing an example of the configuration of the air inlet in the vacuum delivery chamber of the first embodiment.

[0059] Explanation of reference numerals in the attached figures

[0060] 1 Substrate Processing Device

[0061] 10. Main body of the device

[0062] 11 Vacuum Transfer Chamber (VTM)

[0063] 12 robotic arms

[0064] 13 Processing Modules (PM)

[0065] Gates 14 and 16

[0066] 14a Connection Part

[0067] 15. Load Lockout Module (LLM)

[0068] 30-41 air intake

[0069] 42 exhaust ports

[0070] 54 Purge Gas Supply Source

[0071] 56, 58, 59, 63, 90, 96 piping

[0072] Mass Flow Controllers (MFC) 60, 64, 68, and 91

[0073] Valves 57, 62, 94a~94i

[0074] 95, 97a~97i throttling orifices

[0075] 100 control device Detailed Implementation

[0076] Hereinafter, embodiments of the substrate processing apparatus, the purge gas control method, and the vacuum transport chamber cleaning method to be disclosed will be described in detail based on the accompanying drawings. Furthermore, the disclosed technology is not limited to the following embodiments.

[0077] In a vacuum conveying chamber, an airflow atmosphere is generated from the supply side of the purge gas to the exhaust side. However, in cases where the vacuum conveying chamber is long, the airflow atmosphere can sometimes be uneven. When the airflow atmosphere is uneven, the atmosphere inside the processing chamber can be carried out when the processed substrate is discharged from the processing chamber, resulting in external gas accumulation. External gas accumulation is a significant cause of particle generation within the vacuum conveying chamber. Furthermore, if the purge gas flow rate is insufficient when the processed substrate is discharged from the processing chamber, the atmosphere inside the processing chamber can be carried into the vacuum conveying chamber. This residual gas reacts with moisture in the vacuum conveying chamber, causing condensed particles. Therefore, it is desirable to suppress particle accumulation by eliminating gas retention.

[0078] (First Embodiment)

[0079] [Structure of Substrate Processing Device 1]

[0080] Figure 1 This is a cross-sectional view showing an example of the substrate processing apparatus in the first embodiment of the present invention. Figure 1 The substrate processing apparatus 1 shown is a substrate processing apparatus capable of performing various processes such as plasma processing on wafers (e.g., semiconductor wafers) on a wafer-by-wafer basis.

[0081] The substrate processing apparatus 1 includes an apparatus main body 10 and a control device 100 of the control device main body 10. The apparatus main body 10, for example... Figure 1 As shown, it includes a vacuum transfer chamber 11, multiple processing modules 13, multiple load locking modules 15, and an EFEM (Equipment Front End Module) 18. Furthermore, in the following description, the vacuum transfer chamber 11 will also be referred to as a VTM (Vacuum Transfer Module) 11, the processing modules 13 as PM (Process Module) 13, and the load locking modules 15 as LLM (Load Lock Module) 15.

[0082] The VTM11 has a generally quadrilateral shape in a plan view. Multiple PM13s are connected to two opposite sides of the VTM11. Furthermore, an LLM15 is connected to one of the other two opposite sides of the VTM11. That is, the VTM11 has a top surface, a bottom surface opposite the top surface, and a side surface between the top and bottom surfaces, with a first side surface and a second side surface opposite the first side surface. An LLM15 is also connected to the first side surface. The VTM11 has a vacuum chamber in which a robotic arm 12 is disposed.

[0083] The robotic arm 12 is configured to rotate, extend, and lift. By placing a wafer at its front end, the robotic arm 12 can transport wafers between PM13 and LLM15. The robotic arm 12 is an example of a vacuum transport robotic arm. Furthermore, the robotic arm 12 is not limited to simply being able to transport wafers between PM13 and LLM15. Figure 1 The structure is shown. Furthermore, electrodes for applying high voltage are provided within the robotic arm 12.

[0084] PM13 has a processing chamber with a cylindrical mounting stage (support stage) disposed inside. After the wafer is placed on the mounting stage, PM13 introduces processing gas after depressurization and further applies high-frequency electrical power to generate plasma, which is then used to perform plasma processing on the wafer. VTM11 and PM13 are separated by an openable and closable gate 14.

[0085] The LLM15 is positioned between the VTM11 and EFEM18. The LLM15 has a variable-pressure chamber capable of switching its internal pressure to vacuum or atmospheric pressure, and a cylindrical mounting stage disposed within it. When feeding a wafer from EFEM18 to VTM11, the LLM15 maintains atmospheric pressure internally. After receiving the wafer from EFEM18, the internal pressure is reduced, and the wafer is fed into VTM11. Conversely, when feeding a wafer from VTM11 to EFEM18, the LLM15 maintains a vacuum internally. After receiving the wafer from VTM11, the internal pressure is increased to atmospheric pressure, and the wafer is fed out of EFEM18. The LLM15 and VTM11 are separated by an openable / closable gate 16. Furthermore, the LLM15 and EFEM18 are separated by an openable / closable gate 17.

[0086] EFEM18 is configured opposite to VTM11. EFEM18 is cuboid in shape and includes an FFU (Fan Filter Unit), which is an atmospheric transport chamber maintained at atmospheric pressure. Three LLM15 units are connected to one side along the length of EFEM18. Five LoadPorts (LPs) 19 are connected to the other side along the length of EFEM18. LPs 19 hold FOUP (Front-Opening Unified Pod) (not shown), which serve as containers for holding multiple wafers. An atmospheric transport robotic arm (not shown) for transporting wafers is configured within EFEM18. EFEM18 is an example of a loading module.

[0087] The substrate processing apparatus 1 includes a control device 100. The control device 100 is, for example, a computer, including a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read-Only Memory), auxiliary storage devices, etc. The CPU operates based on a program stored in the ROM or auxiliary storage devices, controlling the operation of each component of the substrate processing apparatus 1.

[0088] [Details of the piping system leading to VTM11]

[0089] Figure 2 This is a diagram showing an example of the piping system leading to the vacuum delivery chamber in the first embodiment. Additionally, in Figure 2 In this description, VTM11 is divided into two parts to illustrate the piping system, but in reality, it is a piping system leading to one VTM11.

[0090] like Figure 2 As shown, the VTM11 has: an air inlet 30 located on the top surface of the center portion of the second side opposite to the first side connected to the LLM15, and air inlets 31 and 32 located on the top surfaces of both sides of the center portion of the second side. Furthermore, the VTM11 has air inlets 33 to 38 located at the connection portions 14a of each gate 14 corresponding to each PM13, and air inlets 39 to 41 located at the connection portions of each gate 16 corresponding to each LLM15. Additionally, the VTM11 has an exhaust port 42 at the center of the bottom surface of the first side.

[0091] Dry air supply source 50 is connected to inlet 30 via regulator 51, piping 52, and valve 53. Regulator 51 regulates the pressure of the dry air supplied to piping 52. Valve 53 controls the supply / stop of dry air to inlet 30. Purge gas supply source 54 is connected to valve 53 on the VTM11 side of piping 52 via regulator 55, piping 56, and valve 57. Regulator 55 regulates the pressure of the purge gas supplied to piping 56. Valve 57 controls the supply / stop of purge gas to inlet 30.

[0092] Furthermore, pipe 58 branches off from pipe 56, and pipes 59 and 63 further branch off from pipe 58. Pipe 59 connects to inlets 30-32, 39, and 40 via an MFC (Mass Flow Controller) 60, a filter 61, and a valve 62. Pipe 59 branches off into pipes 59a-59e, corresponding to inlets 30-32, 39, and 40, respectively, at a position closer to VTM11 than valve 62. MFC 60 is a flow controller that controls the flow rate of the purge gas to pipe 59. Filter 61 is a filter used to remove particles and other contaminants from the purge gas. Valve 62 controls the supply / stopping of the purge gas to inlets 30-32, 39, and 40. Additionally, MFC 60 is an example of a first mass flow controller, and pipe 59 is an example of a first piping.

[0093] Pipe 63 is connected to inlets 39-41 via MFC 64, filter 65, and valve 66. Pipe 63 branches into pipes 63a-63c, corresponding to inlets 39-41, at a position closer to VTM11 than valve 66. Furthermore, valves 67a-67c are installed on pipes 63a-63c. MFC 64 controls the flow rate of purge gas to pipe 63. Filter 65 is used to remove particles and other contaminants from the purge gas. Valve 66 controls the supply / stopping of purge gas to inlets 39-41. Additionally, MFC 64 is an example of a second mass flow controller, and pipe 63 is an example of a second piping system.

[0094] Pipe 58, after branching off pipe 63, connects to inlets 33-38 via MFC 68, filter 69, and valve 70. Pipe 58 branches off into pipes 58a-58f, corresponding to inlets 33-38, at a position closer to VTM11 than valve 70. Valves 71a-71f are installed on pipes 58a-58f. MFC 68 controls the flow rate of purge gas to pipe 58 after branching off pipe 63. Filter 69 is used to remove particles and other contaminants from the purge gas. Valve 70 controls the supply / stop of purge gas to inlets 33-38. Furthermore, MFC 68 is an example of a third mass flow controller, and pipe 58 after branching off pipe 63 is an example of a third piping system.

[0095] Dry air supply source 50 supplies dry air to VTM11, for example, when the atmosphere is open. Purge gas supply source 54 supplies purge gas to inlet 30 via pipes 56 and 52. Furthermore, purge gas supply source 54 supplies purge gas to inlets 30-41 via pipes 58, 59, and 63. The supply of purge gas to inlets 30-41 via pipes 58, 59, and 63 continues during normal operation. N2 gas can be used as the purge gas. Additionally, the supply of purge gas via pipes 56 and 52 occurs, for example, during cleaning operations and not during normal operation. Alternatively, pipe 58 can be connected to regulator 55 without pipe 56 and valve 57.

[0096] An exhaust pipe 80 is connected to the exhaust port 42. The exhaust pipe 80 is connected to an APC (Automatic Pressure Control) 82 and a TMP (Turbo Molecular Pump) 83 via a valve 81. The TMP 83 is connected to a dry pump 84. Furthermore, a valve 85 is provided on the piping that bypasses the APC 82 and TMP 83 and connects to the dry pump 84. The APC 82 is an automatic pressure control valve that functions as a variable butterfly valve, automatically controlling the pressure within the VTM 11. The TMP 83 and the dry pump 84 are exhaust pumps used for vacuuming. When pressure reduction begins from atmospheric pressure, valve 85 is opened, and exhaust is performed using only the dry pump 84. When pressure reduction continues, valve 85 is closed, and exhaust is performed using both the TMP 83 and the dry pump 84.

[0097] [Control methods for purging gases]

[0098] Next, the method for controlling the purge gas according to the first embodiment will be described. Figure 3 This is a diagram illustrating an example of the timing of the purge gas in the first embodiment. Additionally, in Figure 3 In the code, MFC60 (the first mass flow controller) is represented as "MFC1", MFC64 (the second mass flow controller) is represented as "MFC2", and MFC68 (the third mass flow controller) is represented as "MFC3".

[0099] In addition, Figure 3 In this document, the state of the vacuum transport chamber is indicated as "standby / transporting" when it is in standby or transporting. Similarly, the state of the vacuum transport chamber is indicated as "LLM exchange" when the gate 16 is open and wafers are being fed in and out between the gate and LLM15, and as "PM exchange" when the gate 14 is open and wafers are being fed in and out between the gate and PM13.

[0100] First, as an initial state, VTM11 is in standby mode (step S1), and valves 53 and 57 are closed. Furthermore, the flow rate of MFC60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is opened to supply purge gas in a manner that equalizes the total flow rate of inlets 30-32 with the total flow rate of inlets 39 and 40. On the other hand, MFC64 and MFC68 control the flow rate to 0%. Additionally, APC82 specifies the opening and closing angle of the valve body to a predetermined angle, and the pressure inside VTM11 is regulated to a predetermined pressure (e.g., 50 mTorr). At this time, the purge gas flows from the second side opposite to the first side connected to LLM15 to the first side side, and is discharged from the exhaust port 42 located on the bottom surface of the first side side.

[0101] When the control device 100 opens the gate 16 and performs chip feeding / ejection between the gate and LLM 15 (step S2), it maintains the flow rate of MFC 60 at 100%. The control device 100 also maintains the flow rates of MFC 64 and MFC 68 at 0%. Additionally, the control device 100 can also control the flow rate of MFC 64 as follows: Figure 3 As indicated by the dashed line, gradual control is performed to change the flow rate towards a specified flow rate (100%). During gradual control, valves 67a to 67c are opened, supplying purge gas from inlets 39 to 41. Furthermore, control device 100 continues to control APC82 by adjusting the pressure through angle specification.

[0102] After the control device 100 moves the wafer into the VTM 11 using the robotic arm 12, it closes the gate 16. The control device 100 then uses the robotic arm 12 to transport the wafer from in front of the gate 16 to in front of the gate 14 of the transport destination PM 13. During this wafer transport (step S3), the control device 100 maintains the flow rate of MFC 60 at 100%. Furthermore, the control device 100 sets the flow rates of MFC 64 and MFC 68 to 0%. For APC 82, the control device 100 continues to control it by adjusting the voltage via angle specification.

[0103] When the control device 100 opens the gate 14 and performs wafer feeding / receiving between the gate and PM13 (step S4), it maintains the flow rate of MFC60 at 100%. The control device 100 also maintains the flow rate of MFC64 at 0%. On the other hand, the control device 100 gradually controls the flow rate of MFC68, changing it towards a predetermined flow rate (100%). At this time, valves 71a to 71f are opened, supplying purge gas from inlets 33 to 38. This suppresses airflow turbulence within VTM11 caused by the purge gas flowing towards PM13. The control device 100 continues to control APC82 by adjusting the pressure through angle specification.

[0104] After placing the wafer into PM13, control device 100 moves robotic arm 12 into VTM11 and closes gate 14. VTM11 returns to standby state (step S1). In this case, similar to step S3, control device 100 maintains the flow rate of MFC60 at 100%. Furthermore, control device 100 sets the flow rates of MFC64 and MFC68 to 0%. Control device 100 continues to control APC82 by adjusting the pressure through angle specification. This results in a uniform flow of purge gas within VTM11, eliminating the retention of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, deposits are less likely to adhere to the sidewalls within VTM11.

[0105] As described above, in VTM11, at least one air inlet (air inlet 30-32) is provided on the top surface near the second side, connected to the purge gas supply source 54 and to the piping 59 that supplies purge gas into VTM11. The purge gas supplied from the air inlet is discharged from at least one exhaust port 42, which is provided on the bottom surface near the first side of VTM11 and connected to the TMP 83 and the dry pump 84, which discharge the purge gas supplied to VTM11. In summary, the at least one air inlet (air inlet 30-32) and the exhaust port 42 are configured to allow the purge gas flow to proceed from the second side to the first side.

[0106] The vicinity of the second side refers to the portion of the top surface closest to the second side (up to 12.5% ​​from the second side towards the first side) when the top surface is divided into 8 equal parts in the direction from the first side to the second side, and the air inlet is located in this portion. Preferably, the air inlet may also be located in the portion of the top surface closest to the second side (up to 10% from the second side towards the first side) when the top surface is divided into 10 equal parts in the direction from the first side to the second side. More preferably, the air inlet may also be located in the portion of the top surface closest to the second side (up to 5% from the second side towards the first side) when the top surface is divided into 20 equal parts in the direction from the first side to the second side. Alternatively, instead of the vicinity of the second side, at least one air inlet (air inlet 30-32) may be provided in the portion of the second side closest to the top surface (up to 50% from the top towards the bottom surface) when the second side is divided into 2 equal parts in the direction from the bottom surface to the top surface of VTM11. Setting the air inlet closer to the second side reduces the area where no purge gas is supplied, which is preferable from the viewpoint of making the airflow atmosphere more uniform over a wide range.

[0107] Figure 45 This is a top view showing an example of the configuration of the air inlet of the vacuum delivery chamber in the first embodiment. Figure 45 The image shows a top view of the structure of substrate processing apparatus 1 (excluding EFEM18 and LP19). Figure 45 As described in the text, for example, in the case of dividing into 8 equal parts, when dividing the line segment AB between the first side 11a and the second side 11b into 8 equal parts, the top surface closest to the second side 11b, i.e., the shaded area, is provided with an air inlet. The same applies to dividing into 10 equal parts and 20 equal parts. Figure 45 When the line segment AB is divided into 10 equal parts and 20 equal parts, an air inlet is set on the top surface closest to the second side 11b.

[0108] In addition, VTM11 can be a rectangle in a plan view, or the second side 11b can be composed of two faces, such as the second side 11c shown, which can be a polygon in a plan view, for example, a pentagon.

[0109] Alternatively, VTM11 may have at least one air inlet (air inlet 39-41) connected to the piping 59 on the top surface near the first side, and an exhaust port 42 on the bottom surface near the second side. That is, the positions of at least one air inlet (air inlet 39-41) and exhaust port 42 may also be configured such that the purge gas flow moves from the first side to the second side.

[0110] The vicinity of the first side refers to the portion of the top surface closest to the first side (up to 12.5% ​​from the first side towards the second side) when the top surface is divided into eight equal parts in that direction from the first side to the second side, and the air inlet is located in this portion. Preferably, the air inlet may also be located in the portion of the top surface closest to the first side (up to 10% from the first side towards the second side) when the top surface is divided into ten equal parts from the second side to the first side. More preferably, the air inlet may also be located in the portion of the top surface closest to the first side (up to 5% from the first side towards the second side) when the top surface is divided into twenty equal parts from the second side to the first side. In summary, the vicinity of the first side is also as described above. Figure 45 As described in the text, for example, in the case of dividing into 8 equal parts, when dividing the line segment AB between the first side 11a and the second side 11b into 8 equal parts, an air inlet is provided on the top surface closest to the first side 11a. The same applies to dividing into 10 equal parts and 20 equal parts. Figure 45 When the line segment AB is divided into 10 equal parts and 20 equal parts, an air inlet is set on the top surface closest to the first side surface 11a.

[0111] When at least one air inlet (air inlet 30-32) is located near the second side, the exhaust port 42 is located near the first side. That is, the exhaust port 42 is located on the portion of the bottom surface closest to the first side (up to 12.5% ​​from the first side to the second side) when the bottom surface is divided into eight equal parts in that direction from the first side to the second side. Preferably, the exhaust port 42 may also be located on the portion of the bottom surface closest to the first side (up to 10% from the first side to the second side) when the bottom surface is divided into ten equal parts from the second side to the first side. More preferably, the exhaust port 42 may also be located on the portion of the bottom surface closest to the first side (up to 5% from the first side to the second side) when the bottom surface is divided into twenty equal parts from the second side to the first side. In summary, as... Figure 45 As described in the text, for example, in the case of dividing into 8 equal parts, when dividing the line segment AB between the first side 11a and the second side 11b into 8 equal parts, an exhaust port 42 is provided on the bottom surface closest to the first side 11a. The same applies to dividing into 10 equal parts and 20 equal parts. Figure 45 When the line segment AB is divided into 10 equal parts and 20 equal parts, an exhaust port 42 is set on the bottom surface closest to the first side surface 11a.

[0112] Furthermore, if at least one air inlet (air inlet 30-32) is located near the first side, the exhaust port 42 is located near the second side. That is, the exhaust port 42 is located on the portion of the bottom surface closest to the second side (up to 12.5% ​​from the second side towards the first side) when the bottom surface is divided into eight equal parts in that direction from the first side to the second side. Preferably, the exhaust port 42 may also be located on the portion of the bottom surface closest to the second side (up to 10% from the second side towards the first side) when the bottom surface is divided into ten equal parts in that direction. More preferably, the exhaust port 42 may also be located on the portion of the bottom surface closest to the second side (up to 5% from the second side towards the first side) when the bottom surface is divided into twenty equal parts in that direction.

[0113] [Experimental Results]

[0114] Next, use Figures 4 to 7 Experimental and reference examples using the simulation in the first embodiment will be described. Figure 4 and Figure 5 This is a diagram illustrating an example of the experimental results in the first embodiment. Figure 6 and Figure 7 This is a graph representing one example of the experimental results in the reference example. Additionally, in Figures 4-7 In the simulation, there is a part of airflow overflow outside VTM11, etc. This is a representation technique in the simulation. In reality, there is no airflow overflow from VTM11, etc.

[0115] exist Figure 4 and Figure 5 In the experimental example shown, 100 sccm of purge gas was supplied to VTM11 through inlet 30, 200 sccm of purge gas was supplied through inlets 31 and 32 respectively, and 250 sccm of purge gas was supplied through inlets 39 and 40 respectively. Exhaust gas was discharged through outlet 42. As a result, the flow of purge gas in VTM11 became uniform, and there was also purge gas flow near the surface connected to PM13.

[0116] On the other hand, Figure 6 and Figure 7 In the reference example shown, 1000 sccm of purge gas is supplied to the VTM 120 through the inlet 121 and exhaust gas is discharged through the outlet 122. As a result, the flow of the purge gas within the VTM 120 is uneven, with areas of purge gas stagnation existing around the four sides of the VTM 120. Furthermore, areas of purge gas stagnation also exist at the connection point with PM13. Thus, it can be seen that in the experimental example, compared to the reference example, the purge gas flows uniformly throughout the entire area of ​​the VTM 11.

[0117] [Variation Example 1]

[0118] In the above embodiment, three pipes, 58, 59, and 63, are used to supply purge gas into the VTM11. However, pipes 58 and 63 can also be combined into one system. This type of embodiment will be described as Modification 1. Furthermore, the substrate processing apparatus in Modification 1 is the same as the substrate processing apparatus 1 in the above embodiment, therefore, descriptions of its repetitive structure and operation are omitted.

[0119] Figure 8 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Variation 1. (See diagram for example.) Figure 8 As shown, in the piping system of Modified Example 1, the system of piping 59 is the same as in the embodiment described above, except that piping 58 and piping 63, which are branches of piping 59, are replaced by piping 90. Piping 90 is connected to inlets 33 to 41 via MFC 91, filter 92, and valve 93. Piping 90 branches into piping 90a to 90i, corresponding to inlets 33 to 41, on the VTM11 side closer to valve 93. Furthermore, valves 94a to 94i are provided on piping 90a to 90i respectively. MFC 91 controls the flow rate of purge gas in piping 90. Filter 92 is a filter for removing particles, etc., from the purge gas. Valve 93 controls the supply / stop of purge gas to inlets 33 to 41. Valves 94a to 94i individually control the supply / stop of purge gas to inlets 33 to 41 on piping 90a to 90i respectively. Additionally, MFC91 is an example of a fourth mass flow controller, and piping 90 is an example of a fourth piping. Alternatively, piping 58 can be connected to regulator 55 without piping 56 and valve 57.

[0120] [Control method of purge gas in variation 1]

[0121] Next, the method for controlling the purging gas in Modified Example 1 will be described. Figure 9 This is a diagram illustrating an example of the timing of the purge gas in Modification 1. Additionally, in Figure 9 In this context, MFC60 (the first mass flow controller) is represented as "MFC1", and MFC91 (the fourth mass flow controller) is represented as "MFC4". Furthermore, in... Figure 9 Regarding the status of the vacuum delivery chamber, and... Figure 3 They are also indicated by "Standby / Transferring", "LLM Exchange", and "PM Exchange".

[0122] First, as an initial state, VTM11 is in standby mode (step S11), and valves 53 and 57 are closed. Furthermore, the flow rate of MFC60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is opened to supply purge gas in a manner that equalizes the total flow rate of inlets 30-32 with the total flow rate of inlets 39 and 40. Meanwhile, MFC91 controls the flow rate to 0%. Additionally, APC82 specifies the opening and closing angle of the valve body to a predetermined angle, and the pressure inside VTM11 is regulated to a predetermined pressure (e.g., 50 mTorr). At this time, the purge gas flows from the second side opposite to the first side connected to LLM15 to the first side side, and is discharged from the exhaust port 42 located on the bottom surface of the first side side.

[0123] When the control device 100 opens the gate 16 and performs wafer feeding / receiving between the gate and LLM15 (step S12), it maintains the flow rate of the MFC60 at 100%. The control device 100 gradually controls the flow rate of the MFC91 to change it towards a predetermined flow rate (100%). At this time, valves 94a to 94i are opened, supplying purge gas from inlets 33 to 41. Alternatively, valves 94a to 94f can be closed because they are on the PM13 side, supplying purge gas from inlets 39 to 41. Furthermore, the control device 100 continues to control the APC82 by adjusting the pressure through angle specification.

[0124] After the control device 100 moves the wafer into the VTM 11 using the robotic arm 12, it closes the gate 16. The control device 100 then uses the robotic arm 12 to transport the wafer from the gate 16 to the gate 14 of the transport destination PM 13. During this wafer transport (step S13), the control device 100 maintains the flow rate of MFC 60 at 100%. Furthermore, the control device 100 sets the flow rate of MFC 91 to 0%. For APC 82, the control device 100 continues to control it by adjusting the voltage via angle specification.

[0125] When the control device 100 opens the gate 14 and performs wafer feeding / receiving between the gate and PM13 (step S14), the flow rate of the MFC60 is maintained at 100%. The control device 100 gradually controls the flow rate of the MFC91 to change it towards a predetermined flow rate (100%). At this time, valves 94a to 94i are opened, and purge gas is supplied from inlets 33 to 41. Alternatively, valves 94g to 94i can be closed because they are on the LLM15 side, and gas can be supplied from inlets 33 to 38. This suppresses airflow turbulence within the VTM11 caused by the purge gas flowing towards the PM13 side. The control device 100 continues to control the APC82 by adjusting the pressure through angle specification.

[0126] After placing the wafer in PM13, control device 100 moves robotic arm 12 into VTM11 and closes gate 14. VTM11 returns to standby state (step S11). In this case, similar to step S13, control device 100 maintains the flow rate of MFC60 at 100%. Furthermore, control device 100 sets the flow rate of MFC91 to 0%. Control device 100 continues to control APC82 by adjusting the pressure through angle specification. This results in a uniform flow of purge gas within VTM11, eliminating the retention of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the embodiment described above.

[0127] [Variation Example 2]

[0128] In the above-described embodiments and Modification 1, an MFC 60 is provided in the piping 59 to control the flow rate of the purge gas released (supplied) from the air inlets 30-32, 39, and 40. However, a throttling orifice can be used instead of the MFC 60. This type of embodiment will be described as Modification 2. Furthermore, the substrate processing apparatus in Modification 2 is the same as the substrate processing apparatus 1 in the above-described embodiments and Modification 1, therefore, descriptions of its repetitive structure and operation are omitted.

[0129] Figure 10 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Variation 2. (See diagram for example.) Figure 10 As shown, the piping system in Modification 2, compared to Modification 1, has a throttling orifice 95 instead of MFC60. Furthermore, the piping system in Modification 2 is the same as in Modification 1 except for the throttling orifice 95. The throttling orifice 95 sets the purge gas of piping 59 to a predetermined flow rate. Additionally, piping 59 with the throttling orifice 95 is an example of a fifth piping, valve 62 installed on piping 59 with the throttling orifice 95 is an example of a first valve, and the throttling orifice 95 is an example of a first throttling orifice. Alternatively, piping 56 and valve 57 may be omitted, and piping 58 may be connected to regulator 55 instead.

[0130] [Control method of purging gas in variation example 2]

[0131] Next, the method for controlling the purging gas in Modified Example 2 will be described. Figure 11 This is a diagram illustrating an example of the timing of the purge gas in Modification 2. Additionally, in Figure 11 In this context, the throttling orifice 95 (the first throttling orifice) is designated as "Throttling Orifice 1," and the MFC91 (the fourth mass flow controller) is designated as "MFC4." Furthermore, in... Figure 11 Regarding the status of the vacuum delivery chamber, and... Figure 3They are also indicated by "Standby / Transferring", "LLM Exchange", and "PM Exchange".

[0132] First, as an initial state, VTM11 is in standby mode (step S21), and valves 53 and 57 are closed. Furthermore, the orifice 95 uses a flow rate set to a specified value (in... Figure 11 The throttling orifice (represented as 100%), for example, 1000 sccm, is opened, and valve 62 is opened to supply purge gas at a flow rate equal to the combined flow rate of inlets 30-32 and the combined flow rate of inlets 39 and 40. Meanwhile, MFC91 controls the flow rate to 0%. Furthermore, APC82 specifies the opening and closing angle of the valve body to a predetermined angle, and the pressure within VTM11 is regulated to a predetermined pressure (e.g., 50 mTorr). At this time, the purge gas flows from the second side opposite to the first side connected to LLM15 to the first side side, and is discharged from the exhaust port 42 located on the bottom surface of the first side side.

[0133] When the gate 16 is opened and wafers are fed in and out between the gate and LLM15 (step S22), the flow rate of the throttle orifice 95 cannot be changed, so it remains at 100%. On the other hand, the control device 100 gradually controls the flow rate of the MFC91 to change it towards the specified flow rate (100%). At this time, valves 94a to 94i are opened, and purge gas is supplied from the inlets 33 to 41. Alternatively, valves 94a to 94f can be closed because they are on the PM13 side, and purge gas can be supplied from the inlets 39 to 41. Furthermore, the control device 100 continues to control the APC82 by adjusting the pressure through angle specification.

[0134] After the control device 100 moves the wafer into the VTM 11 using the robotic arm 12, it closes the gate 16. The control device 100 then uses the robotic arm 12 to transport the wafer from in front of the gate 16 to in front of the gate 14 of the transport destination PM 13. During this wafer transport (step S23), the flow rate of the throttle orifice 95 remains at 100% because it cannot be changed. Furthermore, the control device 100 sets the flow rate of the MFC 91 to 0%. For the APC 82, the control device 100 continues to control it by adjusting the voltage through angle specification.

[0135] When the gate 14 is opened and wafers are fed in and out between the gate and PM13 (step S24), the flow rate of the throttle orifice 95 cannot be changed, so it remains at 100%. The control device 100 gradually controls the flow rate of the MFC 91 to change it towards the specified flow rate (100%). At this time, valves 94a to 94i are opened, and purge gas is supplied from the inlets 33 to 41. Alternatively, valves 94g to 94i can be closed because they are on the LLM15 side, and gas can be supplied from the inlets 33 to 38. This suppresses the turbulence in the airflow within the VTM 11 caused by the purge gas flowing towards the PM13 side. The control device 100 continues to control the APC 82 by adjusting the pressure through angle specification.

[0136] After placing the wafer in PM13, control device 100 moves robotic arm 12 into VTM11 and closes gate 14. VTM11 returns to standby state (step S21). In this case, similar to step S23, the flow rate of orifice 95 cannot be changed, so it remains at 100%. Furthermore, control device 100 sets the flow rate of MFC91 to 0%. Control device 100 continues to control APC82 by adjusting the pressure through angle specification. As a result, the flow of purge gas in VTM11 becomes uniform, eliminating the retention of purge gas containing residual gas components, thereby suppressing particle accumulation. In addition, the piping system can be reduced compared to the above embodiment. Furthermore, because MFC60 is replaced with the inexpensive orifice 95, the cost can be reduced compared to the above-described variation 1.

[0137] [Variation Example 3]

[0138] In the above-described Modification 1, an MFC 91, a filter 92, and a valve 93 are provided in the piping 90, and piping 90a to 90i branch off from the valve 93 on the side closer to VTM11. However, it is also possible to provide a throttling orifice, a filter, and a valve in the piping after the branch. This implementation will be described as Modification 3. In addition, the substrate processing apparatus in Modification 3 is the same as the substrate processing apparatus 1 in the above-described embodiment and Modification 1, so the description of its repeated structure and operation is omitted.

[0139] Figure 12 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Variation 3. (See diagram for example.) Figure 12As shown, in the piping system of Modified Example 3, the system of piping 59 is the same as that of Modified Example 1, except that piping 90 is replaced by piping 96. Piping 96 branches into piping 96a to 96i, which correspond to the air inlets 33 to 41 respectively. Furthermore, throttling orifices 97a to 97i, filters 98a to 98i, and valves 94a to 94i are respectively provided in piping 96a to 96i. The throttling orifices 97a to 97i set the purge gas of each piping 96a to 96i to a predetermined flow rate. The filters 98a to 98i are filters used to remove particles and the like from the purge gas. The valves 94a to 94i individually control the supply / stop of the purge gas to the air inlets 33 to 41 using piping 96a to 96i. In addition, piping 96 is an example of a sixth piping, throttling orifices 97a to 97i are an example of a second throttling orifice, and valves 94a to 94i are an example of a second valve. Alternatively, piping 58 can be connected to regulator 55 instead of piping 56 and valve 57.

[0140] [Control method of purge gas in variation 3]

[0141] Next, the method for controlling the purging gas in Modified Example 3 will be explained. Figure 13 This is a diagram illustrating an example of the timing of the purge gas in Modification 3. Additionally, in Figure 13 In this context, MFC60 (the first mass flow controller) is referred to as "MFC1", and orifices 97a to 97i (the second mass flow controller) are referred to as "orifice 2". Furthermore, in... Figure 13 Regarding the status of the vacuum delivery chamber, and... Figure 3 They are also indicated by "Standby / Transferring", "LLM Exchange", and "PM Exchange".

[0142] First, as an initial state, VTM11 is in standby mode (step S31), and valves 53 and 57 are closed. Furthermore, the flow rate of MFC60 is set to a predetermined flow rate (100%), for example, 1000 sccm. Valve 62 is opened, supplying purge gas in such a manner that the total flow rate of inlets 30-32 is equal to the total flow rate of inlets 39 and 40. On the other hand, the flow rate of pipes 96a-96i is controlled to 0% by closing valves 94a-94i. Additionally, APC82 specifies the opening and closing angle of the valve body to a predetermined angle, and the pressure inside VTM11 is regulated to a predetermined pressure (e.g., 50 mTorr). At this time, the purge gas flows from the second side opposite to the first side connected to LLM15 to the first side side, and is discharged from the exhaust port 42 located on the bottom surface of the first side side.

[0143] When the control device 100 opens the gate 16 and performs wafer feeding / receiving between the gate and LLM15 (step S32), it maintains the flow rate of the MFC60 at 100%. The control device 100 opens valves 94a to 94i. At this time, purge gas with flow rates set by the throttling orifices 97a to 97i is supplied from the inlets 33 to 41. Alternatively, valves 94a to 94f can be closed because they are on the PM13 side, and purge gas can be supplied from the inlets 39 to 41. Furthermore, the control device 100 continues to control the APC82 by adjusting the pressure through angle specification.

[0144] After the control device 100 moves the wafer into the VTM 11 using the robotic arm 12, it closes the gate 16. The control device 100 then uses the robotic arm 12 to transport the wafer from the gate 16 to the gate 14 of the PM 13, the destination of the transport. During this wafer transport (step S33), the control device 100 maintains the flow rate of the MFC 60 at 100%. Furthermore, the control device 100 closes valves 94a to 94i, reducing the flow rate to the air inlets 33 to 41 to 0%. The control device 100 continues to control the APC 82 by adjusting the pressure through angle specification.

[0145] When the control device 100 opens the gate 14 and performs wafer feeding / receiving between the gate and PM13 (step S34), it maintains the flow rate of the MFC60 at 100%. The control device 100 opens valves 94a to 94i. At this time, purge gas with flow rates set by the throttling orifices 97a to 97i is supplied from the inlets 33 to 41. Alternatively, valves 94g to 94i can be closed because they are on the LLM15 side, and gas can be supplied from the inlets 33 to 38. This suppresses airflow turbulence within the VTM11 caused by the purge gas flowing towards the PM13 side. The control device 100 continues to control the APC82 by adjusting the pressure through angle specification.

[0146] After placing the wafer in PM13, control device 100 moves robotic arm 12 into VTM11 and closes gate 14. Control device 100 returns to standby state (step S31). In this case, similar to step S33, control device 100 maintains the flow rate of MFC60 at 100%. Furthermore, control device 100 closes valves 94a-94i, reducing the flow rate to inlets 33-41 to 0%. Control device 100 continues to control APC82 by adjusting the pressure through angle specification. As a result, the flow of purge gas in VTM11 becomes uniform, eliminating the retention of purge gas containing residual gas components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment. Moreover, since the inexpensive orifices 97a-97i and valves 94a-94i are used to control the flow rate of inlets 33-41 instead of MFC91, the cost can be reduced compared to the above-described variant 3.

[0147] (Second Implementation)

[0148] In the first embodiment and variations 1 to 3 described above, particle accumulation was suppressed by making the purge gas flow within the VTM11 uniform. However, it is also possible to shorten the time required to discharge particles. This type of embodiment will be described as the second embodiment. Furthermore, the substrate processing apparatus in the second embodiment is the same as the substrate processing apparatus 1 in variation 1 described above, so descriptions of its repetitive structure and operation are omitted.

[0149] In the vacuum conveying chamber, an airflow atmosphere is generated from the supply side of the purge gas to the exhaust side. However, in large vacuum conveying chambers, the purge gas flow is weak, and it takes a long time for particles to be discharged to the exhaust port. Therefore, the cleaning time increases. Furthermore, due to the weak purge gas flow, there are areas within the vacuum conveying chamber that the shock wave generated by the purge gas cannot reach. Therefore, it is desirable to fill the entire vacuum conveying chamber with the shock wave generated by the purge gas and shorten the cleaning time of the vacuum conveying chamber.

[0150] [Details of the piping system leading to VTM11]

[0151] Next, the differences between the substrate processing apparatus of the second embodiment and the substrate processing apparatus 1 of Modified Example 1 will be described. In the VTM 11 of the second embodiment, for example, when valves 94a to 94i are open, the flow rate of the purge gas in the MFC 91 for inlets 33 to 41 is controlled to be approximately 500 sccm or more. Furthermore, an MFC (not shown) is provided in the piping 56, and when valve 57 is open, the flow rate of the purge gas for inlet 30 is controlled to be approximately 500 sccm or more. In addition, inlet 30 is an example of a first inlet. Furthermore, inlets 33 to 41 are examples of a second inlet.

[0152] The purge gas supply source 54 supplies purge gas to the inlets 30, 33-41 via pipes 56 and 90. The supply of purge gas to the inlets 30, 33-41 via pipes 56 and 90 is performed during normal operation and when performing non-plasma process cleaning (NPPC). During normal operation, for example, a predetermined flow rate of purge gas is continuously flowing from inlet 30. N2 gas can be used as the purge gas. Furthermore, in the second embodiment, the supply of purge gas during NPPC operation will be described.

[0153] APC82 is an automatic pressure control valve that functions as a variable butterfly valve, automatically controlling the pressure within VTM11. To impart a high viscosity to the purge gas supplied from inlets 30, 33-41, pressure control is preferably performed to ensure the pressure within VTM11 is 133 Pa (1 Torr) or higher. Pressure control can be performed simultaneously with venting using TMP83 and APC82, or it can be performed by controlling the purge gas flow rate while venting using only the dry pump 84 with valve 85 open. A particle monitoring device (not shown) is connected directly below valve 81 to monitor particles contained in the exhaust gas passing through exhaust pipe 80. This particle monitoring device is an example of a particle detector. Alternatively, if monitoring of particles in the exhaust gas is not required, a particle monitoring device may not be necessary.

[0154] [Cleaning method for vacuum transport chamber 11]

[0155] Next, the cleaning method for the vacuum delivery chamber in the second embodiment will be described. Furthermore, in the second embodiment, the piping system leading to VTM11 uses... Figure 8 The piping system shown in Variation 1. Figure 14 This is a diagram illustrating an example of the valve opening and closing sequence in the second embodiment. Additionally, in Figure 14In this configuration, for the air inlets 33-40 and their corresponding valves 94a-94h, the valves are operated by grouping the air inlets and valves in relative positions together. Furthermore, the air inlet 41 and valve 94i... Figure 14 The valve opening and closing sequence shown is not used. Additionally, in Figure 14 In this context, the open state of a valve is represented as "open," and the closed state is represented as "closed."

[0156] When cleaning VTM11, control device 100 first controls valve 57 to supply purge gas from the first air inlet 30, located furthest from exhaust port 42 on VTM11, for a predetermined time. This predetermined time can be, for example, 1 to 5 seconds. Additionally, control device 100 can also perform VTM11 cleaning if a particle monitoring device (not shown) located immediately after valve 81 detects a number of particles exceeding a threshold.

[0157] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of second inlets 33 and 38 located on the side closer to LLM15 than inlet 30, for a predetermined time.

[0158] The control device 100 supplies purge gas from the inlet 30 side to the outlet 42 side, following the sequence of inlet groups 34 and 37, inlet groups 35 and 36, and inlet groups 39 and 40, at predetermined intervals. Specifically, the control device 100 controls the opening and closing of valves 94b and 94e, followed by groups 94c and 94d, and then groups 94g and 94h. This generates a viscous flow of purge gas from the inlet 30 to the outlet 42 within the VTM 11, ensuring that even with a large VTM 11, the shock wave (physical vibration) of the purge gas fills the entire VTM 11. Furthermore, by efficiently moving particles within the VTM 11 towards the outlet 42, the cleaning time of the VTM 11 can be shortened.

[0159] [Experimental Results]

[0160] Next, use Figures 15 to 19 An experimental example using the simulated second implementation method is described. Figures 15 to 19 This is a diagram illustrating an example of the experimental results of the second embodiment. Additionally, in Figures 15 to 19 In the simulation, there is a portion of airflow overflowing outside VTM11, but this is only a manifestation in the simulation and there is actually no airflow overflowing from VTM11.

[0161] Figure 15This describes the pressure distribution and airflow of the purge gas when it is supplied from the inlet 30 for a specified time. It is known that under these conditions, the shock wave reaches the wall of the VTM11 near the inlet 30. Furthermore, it is assumed that when purge gas is supplied only from the inlet 30, the shock wave will not reach the wall on the exhaust port 42 side of the VTM11.

[0162] Figure 16 This indicates the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 33 and 38 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 33 and 38, and the airflow of the purge gas toward the exhaust port 42 becomes stronger.

[0163] Figure 17 This describes the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 34 and 37 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 34 and 37, and the purge gas does not flow to the inlet 30 side, but flows to the exhaust port 42.

[0164] Figure 18 This indicates the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 35 and 36 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 35 and 36, and the purge gas does not flow to the inlet 30 side, but flows to the exhaust port 42.

[0165] Figure 19 This describes the pressure distribution and airflow of purge gas when it is supplied from inlets 39 and 40 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 39 and 40, and the purge gas diffuses near exhaust port 42, flowing less towards inlet 30 and more towards exhaust port 42. Thus, by supplying purge gas from... Figures 15 to 19 Purge gas is supplied sequentially, and due to the viscous flow of the purge gas from the inlet 30 to the outlet 42, the particles in the VTM11 move efficiently toward the outlet 42 and are discharged.

[0166] [Variations on valve opening and closing sequence]

[0167] In the above embodiments, the supply time of the purge gas for the groups of air inlets 30, 33, 38, 34, 37, 35, 36, and 39, 40 is set to a non-overlapping sequence. However, it is also possible to supply the gas in a partially repeated manner or simultaneously for two groups. Embodiments under this condition will be described as variations 4 to 12. Furthermore, in variations 4 to 12, similar to the second embodiment, for air inlets 33 to 40 and their corresponding valves 94a to 94h, the valves are operated by grouping the air inlets and valves in opposite positions together. Additionally, air inlet 41 and valve 94i are not used in the valve opening and closing sequence shown in variations 4 to 12. Furthermore, the substrate processing apparatus in variations 4 to 12 is the same as the substrate processing apparatus 1 of the second embodiment described above; therefore, descriptions of its repetitive structure and operation are omitted.

[0168] [Variation Example 4]

[0169] Figure 20 This is a diagram illustrating an example of the valve opening and closing sequence in variation 4. Figure 20 In the modified example 4 shown, when cleaning VTM11, the control device 100 first controls valve 57 to supply purge gas from the first air inlet, i.e., air inlet 30, which is located furthest from the exhaust port 42 of VTM11, for a predetermined time.

[0170] The control device 100 then controls valves 94a and 94f to supply purge gas from the inlets 33 and 38 for a specified time.

[0171] The control device 100 controls the group of valves 94b and 94e to supply purge gas from the inlet 30 side to the outlet 42 side, and similarly from the group of inlets 34 and 37 for a specified time.

[0172] The control device 100 then synchronously controls the groups of valves 94c and 94d with the group of valves 94g and 94h by simultaneously supplying purge gas to the groups of inlets 35 and 36 and inlets 39 and 40 at predetermined times. This suppresses the flow of purge gas from the groups of inlets 39 and 40 towards the inlet 30. Furthermore, the cleaning time can be shortened compared to the second embodiment.

[0173] [Variation Example 5]

[0174] Figure 21 This is a diagram illustrating an example of the valve opening and closing sequence in variation 5. Figure 21 In the modified example 5 shown, when cleaning VTM11, the control device 100 first controls valve 57 to supply purge gas from the first air inlet, i.e., air inlet 30, which is located furthest from the exhaust port 42 of VTM11, for a predetermined time.

[0175] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time before the supply from inlet 30 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 33 and 38 begins during the supply of purge gas from inlet 30.

[0176] The control device 100 then controls the group of valves 94b and 94e such that, before the supply of purge gas from the group of inlets 33 and 38 has elapsed for a predetermined time, purge gas is supplied from the group of inlets 34 and 37 for a predetermined time. That is, the supply of purge gas from the group of inlets 34 and 37 begins during the supply of purge gas from the group of inlets 33 and 38.

[0177] The control device 100 then controls the group of valves 94c and 94d such that, before the supply of purge gas from the group of inlets 34 and 37 has elapsed for a predetermined time, purge gas is supplied from the group of inlets 35 and 36 for a predetermined time. That is, the supply of purge gas from the group of inlets 35 and 36 begins during the supply of purge gas from the group of inlets 34 and 37.

[0178] The control device 100 then controls the group of valves 94g and 94h to supply purge gas from the group of inlets 39 and 40 for a predetermined time before the supply from the group of inlets 35 and 36 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 39 and 40 begins during the supply of purge gas from the group of inlets 35 and 36. As a result, the viscous flow continuously from the inlet 30 side to the exhaust port 42 side, thus facilitating the movement of particles to the exhaust port 42 and reducing the number of particles returning to the inlet 30 side. Furthermore, because the purge gas supply times overlap, the cleaning time can be further shortened.

[0179] [Variation Example 6]

[0180] Figure 22 This is a diagram illustrating an example of the valve opening and closing sequence in variation 6. Figure 22 The modified example 6 shown is a case of repeatedly performing the valve opening and closing sequence of modified example 5. When cleaning VTM11, the control device 100 first controls valve 57 so that purge gas is supplied from the first air inlet, i.e., air inlet 30, which is located furthest from the exhaust port 42 of VTM11, for a predetermined time.

[0181] The control device 100 controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time before the supply from inlet 30 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 33 and 38 begins during the supply of purge gas from inlet 30. Hereinafter, similar to Modification 5, the control device 100 performs the supply of purge gas from the group of inlets 33 and 38, the group of inlets 34 and 37, the group of inlets 35 and 36, and the group of inlets 39 and 40 in an overlapping manner for predetermined time.

[0182] When the purge gas supply from the group of inlets 39 and 40 is completed within a predetermined time, the control device 100 again performs the purge gas supply in the order of inlets 30, 33 and 38, 34 and 37, 35 and 36, and 39 and 40, overlapping the predetermined time intervals. Furthermore, the number of repetitions of the valve opening and closing sequence from inlet 30 to inlets 39 and 40 is not limited. If a particle monitoring device is installed, the valve opening and closing sequence is repeated even if the particle quantity does not fall below a reference value during one valve opening and closing sequence, ending when the particle quantity falls below the reference value. If a particle monitoring device is not installed, the valve opening and closing sequence can be repeated a predetermined number of times before ending.

[0183] [Variation Example 7]

[0184] Figure 23 This is a diagram illustrating an example of the valve opening and closing sequence in variation 7. Figure 23 The modified example 7 shown is a case where, in the valve opening and closing sequence of modified example 5, the group of inlets 35 and 36 and the group of inlets 39 and 40 are controlled to simultaneously supply purge gas at a predetermined time. That is, modified example 7 is a combination of modified examples 4 and 5, therefore its detailed description is omitted. In modified example 7, the flow of purge gas from the group of inlets 39 and 40 towards inlet 30 can be suppressed. Furthermore, in modified example 7, the cleaning time can be further shortened.

[0185] [Variation Example 8]

[0186] Figure 24This is a diagram illustrating an example of the valve opening and closing sequence in Modification 8. Modification 8 is a repetition of the valve opening and closing sequence of Modification 7, just as in Modification 6. Similar to Modification 6, the number of repetitions of the series of valve opening and closing sequences in Modification 8 is not limited. When a particle monitoring device is installed, even if the particle quantity does not fall below a reference value during a single valve opening and closing sequence, the process continues until the particle quantity falls below the reference value. When a particle monitoring device is not installed, the series of valve opening and closing sequences can be repeated a predetermined number of times until the process ends.

[0187] [Variation Example 9]

[0188] Figure 25 This is a diagram illustrating an example of the valve opening and closing sequence in variation 9. Figure 25 In the modified example 9 shown, when cleaning VTM11, the control device 100 first controls valve 57 to supply purge gas from the first air inlet, i.e., air inlet 30, which is located furthest from the exhaust port 42 of VTM11, for a predetermined time. The control device 100 repeats the supply of purge gas from air inlet 30 for a predetermined number of times, for example, 3 times.

[0189] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time. The control device 100 repeats the supply of purge gas from the group of inlets 33 and 38 for a predetermined number of times, for example, three times.

[0190] The control device 100, from the inlet 30 side to the outlet 42 side, similarly repeats the supply of purge gas for a predetermined number of times, for example, 3 times, in the order of groups of inlets 34 and 37, groups of inlets 35 and 36, and groups of inlets 39 and 40. That is, the control device 100 repeats the valve opening and closing control a predetermined number of times in the order of groups of valves 94b and 94e, groups of valves 94c and 94d, and groups of valves 94g and 94h. This allows particles that were not removed by the shock wave of the purge gas in one pass to be removed. Alternatively, the series of valve opening and closing sequences of Modified Example 9 can be repeated in the same way as in Modified Example 6.

[0191] [Variation Example 10]

[0192] Figure 26 This is a diagram illustrating an example of the valve opening and closing sequence in variation 10. Figure 26The modified example 10 shown is a case where the supply of purge gas to the groups of inlets 35 and 36 and the groups of inlets 39 and 40 for a predetermined period of time in the valve opening and closing sequence of modified example 9 is controlled by simultaneously performing a predetermined number of repetitions. That is, modified example 10 is a combination of modified example 4 and modified example 9, therefore its detailed description is omitted. As a result, particles that have not been removed by the shock wave of purge gas in one pass can be removed, and the cleaning time can be shortened compared to modified example 9. In addition, the series of valve opening and closing sequences in modified example 10 can be repeated in the same way as in modified example 6.

[0193] [Variation Example 11]

[0194] Figure 27 This diagram illustrates an example of the valve opening and closing sequence in Modification 11. Modification 11 is a repetition of the valve opening and closing sequence of the second embodiment, similar to Modification 6. Like Modification 6, the number of repetitions of the series of valve opening and closing sequences in Modification 11 is not limited. When a particle monitoring device is provided, even if the amount of particles does not fall below a reference value during a single valve opening and closing sequence, the process continues until the amount of particles falls below the reference value by repeatedly performing a series of valve opening and closing sequences. When a particle monitoring device is not provided, the series of valve opening and closing sequences can be repeated a predetermined number of times until the process ends.

[0195] [Variation Example 12]

[0196] Figure 28 This diagram illustrates an example of the valve opening and closing sequence in Modification 12. Modification 12 is a repetition of the valve opening and closing sequence of Modification 4, just as in Modification 11. Similar to Modification 11, the number of repetitions of the series of valve opening and closing sequences in Modification 12 is not limited. When a particle monitoring device is installed, even if the particle quantity does not fall below a reference value during a single valve opening and closing sequence, the process continues until the particle quantity falls below the reference value. Without a particle monitoring device, the series of valve opening and closing sequences can be repeated a predetermined number of times. Therefore, the cleaning time can be shortened compared to Modification 11.

[0197] Furthermore, in the second embodiment and variations 4 to 12 described above, the valve opening and closing sequence of the group of air inlets 30 and 33, 38 is controlled separately, but this is not a limitation. For example, the group of air inlets 30 and 33, 38 can also be controlled by simultaneously supplying purge gas at a predetermined time.

[0198] [Variation Example 13]

[0199] In the second embodiment and variations 4 to 12 described above, the purge gas is supplied to the air inlet 30 via pipe 56 and valve 57. However, it can also be supplied via pipe 59 and valve 62. This embodiment will be described as variation 13. Furthermore, the substrate processing apparatus of variation 13 is the same as the substrate processing apparatus 1 of the second embodiment described above, so the description of its repeated structure and operation is omitted.

[0200] Figure 29 This is a diagram illustrating an example of the piping system leading to the vacuum delivery chamber in Modification 13. (See diagram for example.) Figure 29 As shown, in Modification 13, compared to the second embodiment, piping 56 and valve 57 are not provided, but piping 58 is connected to regulator 55. The supply of purge gas to the inlet 30 is carried out via piping 59 and valve 62 and using piping 59a.

[0201] Figure 30 This is a diagram illustrating an example of the valve opening and closing sequence in variation 13. Additionally, in Figure 30 The supply of purging gas to inlets 30, 31, 32, 39, and 40 is simultaneously controlled by their corresponding valves 62. Furthermore, for inlets 33–40 and their corresponding valves 94a–94h, the valves are operated as a group with the inlets and valves in relative positions. Additionally, inlet 41 and valve 94i… Figure 30 The valve opening and closing sequence shown is not used. Additionally, in Figure 30 The valve's open state is represented as "open", and its closed state is represented as "closed".

[0202] When cleaning VTM11, control device 100 first controls valve 62 to supply purge gas from air inlets 30-32 (located furthest from exhaust port 42 of VTM11) and air inlets 39 and 40 on the LLM15 side for a predetermined time. In this case, air inlets 30-32 are equivalent to the first air inlet. The predetermined time can be, for example, 1 to 5 seconds. Additionally, control device 100 can also perform VTM11 cleaning if a particle monitoring device (not shown) located immediately after valve 81 detects a number of particles exceeding a threshold.

[0203] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of second inlets 33 and 38 located on the side closer to LLM15 than inlet 30, for a predetermined time.

[0204] The control device 100 supplies purge gas from the inlet 30 side to the outlet 42 side, following the sequence of inlet groups 34 and 37, inlet groups 35 and 36, and inlet groups 39 and 40, at predetermined intervals. Specifically, the control device 100 controls the opening and closing of valves 94b and 94e, followed by groups 94c and 94d, and then groups 94g and 94h. This generates a viscous flow of purge gas from the inlet 30 to the outlet 42 within the VTM 11, ensuring that even with a large VTM 11, the shock wave (physical vibration) of the purge gas fills the entire VTM 11. Furthermore, by efficiently moving particles within the VTM 11 towards the outlet 42, the cleaning time of the VTM 11 can be shortened.

[0205] [Experimental Results]

[0206] Next, use Figures 31 to 35 This describes an experimental example that uses a simulated variation. Figures 31 to 35 This is a diagram illustrating an example of the experimental results for variation 13. Additionally, in Figures 31 to 35 In the simulation, there is a portion of airflow overflowing outside VTM11, but this is only a manifestation in the simulation and there is actually no airflow overflowing from VTM11.

[0207] Figure 31 This indicates the pressure distribution and airflow of the purge gas when it is supplied from inlets 30-32, 39, and 40 for a specified time. It can be seen that under these conditions, the flow of the purge gas within VTM11 becomes uniform, and there is also an airflow of purge gas near the surface connected to PM13.

[0208] Figure 32 This indicates the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 33 and 38 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 33 and 38, and the airflow of the purge gas toward the exhaust port 42 becomes stronger.

[0209] Figure 33 This describes the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 34 and 37 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 34 and 37, and the purge gas does not flow to the inlet 30 side, but flows to the exhaust port 42.

[0210] Figure 34 This indicates the pressure distribution and airflow of the purge gas when it is supplied from the group of inlets 35 and 36 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 35 and 36, and the purge gas does not flow to the inlet 30 side, but flows to the exhaust port 42.

[0211] Figure 35 This describes the pressure distribution and airflow of purge gas when it is supplied from inlets 39 and 40 for a specified time. It can be seen that under these conditions, the shock wave reaches the wall of VTM11 near inlets 39 and 40, and the purge gas diffuses near exhaust port 42, flowing less towards inlet 30 and more towards exhaust port 42. Thus, by supplying purge gas from... Figures 31 to 35 Purge gas is supplied sequentially, and due to the viscous flow of the purge gas from the inlet 30 to the outlet 42, the particles in the VTM11 move efficiently toward the outlet 42 and are discharged.

[0212] [Variations on valve opening and closing sequence]

[0213] In the above embodiments, the supply time of the purge gas for the groups of inlets 30-32, 39, 40, 33, 38, 34, 37, 35, 36, and 39, 40 is set to a non-overlapping sequence. However, it is also possible to supply the gas in a partially repeated manner or simultaneously for two groups. Embodiments under this condition will be described as variations 14-22. Furthermore, in variations 14-22, inlets 30-32, 39, 40 and their corresponding valves 62 are operated as a group. Also, similar to variation 13, inlets 33-40 and their corresponding valves 94a-94h are operated as a group of inlets and valves in opposite positions. Further, inlet 41 and valve 94i are not used in the valve opening and closing sequence shown in variations 14-22. Furthermore, the substrate processing apparatus in variations 14 to 22 is the same as the substrate processing apparatus 1 in variation 13 described above, so the description of its repetitive structure and operation is omitted.

[0214] [Variation Example 14]

[0215] Figure 36 This is a diagram illustrating an example of the valve opening and closing sequence in variation 14. Figure 36 In the modified example 14 shown, when cleaning VTM11, the control device 100 first controls valve 62 to supply purge gas from the air inlets 30-32, which are located furthest from the exhaust port 42 of VTM11, and the air inlets 39 and 40, which are closest to the LLM15 side, for a predetermined time.

[0216] The control device 100 then controls valves 94a and 94f to supply purge gas from the inlets 33 and 38 for a specified time.

[0217] The control device 100 controls the group of valves 94b and 94e to supply purge gas from the inlet 30 side to the outlet 42 side, and similarly from the group of inlets 34 and 37 for a specified time.

[0218] The control device 100 then synchronously controls the groups of valves 94c and 94d with the group of valves 94g and 94h by simultaneously supplying purge gas to the groups of inlets 35 and 36 and inlets 39 and 40 at predetermined times. This suppresses the flow of purge gas from the groups of inlets 39 and 40 towards the inlet 30. Furthermore, the cleaning time is shortened compared to Modified Example 13.

[0219] [Variation Example 15]

[0220] Figure 37 This is a diagram illustrating an example of the valve opening and closing sequence in variation 15. Figure 37 In the modified example 15 shown, when cleaning VTM11, the control device 100 first controls valve 62 to supply purge gas from the air inlets 30-32, which are located furthest from the exhaust port 42 of VTM11, and the air inlets 39 and 40, which are closest to the LLM15 side, for a predetermined time.

[0221] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time before the supply from the group of inlets 30-32, 39, and 40 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 33 and 38 begins during the supply of purge gas from the group of inlets 30-32, 39, and 40.

[0222] The control device 100 then controls the group of valves 94b and 94e such that, before the supply of purge gas from the group of inlets 33 and 38 has elapsed for a predetermined time, purge gas is supplied from the group of inlets 34 and 37 for a predetermined time. That is, the supply of purge gas from the group of inlets 34 and 37 begins during the supply of purge gas from the group of inlets 33 and 38.

[0223] The control device 100 then controls the group of valves 94c and 94d such that, before the supply of purge gas from the group of inlets 34 and 37 has elapsed for a predetermined time, purge gas is supplied from the group of inlets 35 and 36 for a predetermined time. That is, the supply of purge gas from the group of inlets 35 and 36 begins during the supply of purge gas from the group of inlets 34 and 37.

[0224] The control device 100 then controls the group of valves 94g and 94h to supply purge gas from the group of inlets 39 and 40 for a predetermined time before the supply from the group of inlets 35 and 36 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 39 and 40 begins during the supply of purge gas from the group of inlets 35 and 36. As a result, the viscous flow continuously from the inlet 30 side to the exhaust port 42 side, thus facilitating the movement of particles to the exhaust port 42 and reducing the number of particles returning to the inlet 30 side. Furthermore, because the purge gas supply times overlap, the cleaning time can be further shortened.

[0225] [Variation Example 16]

[0226] Figure 38 This is a diagram illustrating an example of the valve opening and closing sequence in variation 16. Figure 38 The modified example 16 shown is a case of repeatedly performing the valve opening and closing sequence of modified example 15. When cleaning VTM11, the control device 100 first controls valve 62 so that purge gas is supplied from the air inlets 30-32, which are located furthest from the exhaust port 42 of VTM11, and the air inlets 39 and 40, which are closest to the LLM15 side, for a predetermined time.

[0227] The control device 100 controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time before the supply of purge gas from the group of inlets 30-32, 39, and 40 has elapsed for a predetermined time. That is, the supply of purge gas from the group of inlets 33 and 38 begins during the supply of purge gas from inlet 30. Hereinafter, similar to Modification 15, the control device 100 performs the supply of purge gas from the group of inlets 33 and 38, the group of inlets 34 and 37, the group of inlets 35 and 36, and the group of inlets 39 and 40 in an overlapping manner for predetermined time.

[0228] When the purge gas supply from the group of inlets 39 and 40 is completed within a predetermined time, the control device 100 performs the purge gas supply again in the order of the groups of inlets 30-32, 39, 40, 33, 38, 34, 37, 35, 36, and 39, 40, overlapping the predetermined time intervals. Furthermore, the number of repetitions of the valve opening and closing sequence from the group of inlets 30-32, 39, 40 to the group of inlets 39, 40 is not limited. If a particle monitoring device is installed, the valve opening and closing sequence is repeated even if the particle quantity does not fall below a reference value during one valve opening and closing sequence, ending when the particle quantity falls below the reference value. If a particle monitoring device is not installed, the valve opening and closing sequence can be repeated a predetermined number of times until the end.

[0229] [Variation Example 17]

[0230] Figure 39 This is a diagram illustrating an example of the valve opening and closing sequence in variation 17. Figure 39 The modified example 17 shown is a case where, in the valve opening and closing sequence of modified example 15, the group of inlets 35 and 36 and the group of inlets 39 and 40 are controlled to simultaneously supply purge gas at predetermined times. That is, modified example 17 is a combination of modified examples 14 and 15, therefore its detailed description is omitted. In modified example 17, the flow of purge gas from the group of inlets 39 and 40 towards inlet 30 can be suppressed. Furthermore, in modified example 17, the cleaning time can be further shortened.

[0231] [Variation Example 18]

[0232] Figure 40 This is a diagram illustrating an example of the valve opening and closing sequence in Modification 18. Modification 18 is a repetition of the valve opening and closing sequence of Modification 17, just as in Modification 16. Similar to Modification 16, the number of repetitions of the series of valve opening and closing sequences in Modification 18 is not limited. When a particle monitoring device is installed, even if the particle quantity does not fall below a reference value during a single valve opening and closing sequence, the process continues until the particle quantity falls below the reference value. When a particle monitoring device is not installed, the series of valve opening and closing sequences can be repeated a predetermined number of times until the process ends.

[0233] [Variation Example 19]

[0234] Figure 41 This is a diagram illustrating an example of the valve opening and closing sequence in variation 19. Figure 41 In the modified example 19 shown, when cleaning VTM11, the control device 100 first controls valve 62 to supply purge gas from the air inlets 30-32, which are located furthest from the exhaust port 42 of VTM11, and the air inlets 39 and 40, which are closest to the LLM15 side, for a predetermined time. The control device 100 repeats the supply of purge gas to the group of air inlets 30-32, 39, and 40 for a predetermined number of times, for example, three times.

[0235] The control device 100 then controls valves 94a and 94f to supply purge gas from the group of inlets 33 and 38 for a predetermined time. The control device 100 repeats the supply of purge gas from the group of inlets 33 and 38 for a predetermined number of times, for example, three times.

[0236] The control device 100, from the inlet 30 side to the outlet 42 side, similarly repeats the supply of purge gas for a predetermined number of times, for example, 3 times, in the order of the groups of inlets 34 and 37, inlets 35 and 36, and inlets 39 and 40. That is, the control device 100 repeats the valve opening and closing control a predetermined number of times in the order of the groups of valves 94b and 94e, valves 94c and 94d, and valves 94g and 94h. This allows particles that were not removed by the shock wave of the purge gas in one pass to be removed. Alternatively, the series of valve opening and closing sequences of Modified Example 19 can be repeated in the same way as in Modified Example 16.

[0237] [Variation Example 20]

[0238] Figure 42 This is a diagram illustrating an example of the valve opening and closing sequence in variation 20. Figure 42 The modified example 20 shown is a case where the supply of purge gas to the groups of inlets 35 and 36 and the groups of inlets 39 and 40 for a predetermined period of time in the valve opening and closing sequence of modified example 19 is controlled by simultaneously performing a predetermined number of repetitions. That is, modified example 20 is a combination of modified examples 14 and 19, and therefore its detailed description is omitted. As a result, particles that have not been removed by the shock wave of purge gas in one pass can be removed, and the cleaning time can be shortened compared to modified example 19. In addition, the series of valve opening and closing sequences in modified example 20 can be repeated in the same way as in modified example 16.

[0239] [Variation Example 21]

[0240] Figure 43 This is a diagram illustrating an example of the valve opening and closing sequence of Modification 21. Modification 21 is a repetition of the valve opening and closing sequence of Modification 13, similar to Modification 16. Like Modification 16, the number of repetitions of the series of valve opening and closing sequences in Modification 21 is not limited. When a particle monitoring device is installed, even if the particle quantity does not fall below a reference value during a single valve opening and closing sequence, the process continues until the particle quantity falls below the reference value. When a particle monitoring device is not installed, the series of valve opening and closing sequences can be repeated a predetermined number of times until the process ends.

[0241] [Variation Example 22]

[0242] Figure 44This diagram illustrates an example of the valve opening and closing sequence in Modification 22. Modification 22 is a repetition of the valve opening and closing sequence of Modification 14, similar to Modification 21. Like Modification 21, the number of repetitions of the series of valve opening and closing sequences in Modification 22 is not limited. When a particle monitoring device is installed, even if the particle quantity does not fall below a reference value during a single valve opening and closing sequence, the process continues until the particle quantity falls below the reference value by repeatedly performing a series of valve opening and closing sequences. Without a particle monitoring device, the series of valve opening and closing sequences can be repeated a predetermined number of times. Therefore, the cleaning time can be shortened compared to Modification 21.

[0243] Furthermore, in the second embodiment and variations 4 to 22 described above, particles are cleaned using the viscous flow and shock waves of the purging gas, but this is not a limitation. For example, a high voltage can be applied to electrodes disposed within the robotic arm 12, causing the fork of the robotic arm 12 to approach the inner surface of the VTM 11, thereby generating an electrostatic field between the inner surface of the VTM 11 and the fork, causing electrostatic stress, such as Maxwell stress, to act on the inner surface of the VTM 11. The applied high voltage can be, for example, an alternating application of high voltages with different polarities, such as +1kV and -1kV. Furthermore, the absolute value of the applied high voltage can be, for example, in the range of 1kV to 5kV. Alternatively, the applied high voltage can replace high voltages with different polarities, allowing for sufficient switching of the high voltage on / off. As a result, the adhesion of particles deposited on the inner surface of the VTM 11 is weak, and the particles detach. That is, the control device 100 can remove particles deposited on the inner surface of the VTM 11 at the desired location by moving the fork of the robotic arm 12 to the desired position. For example, in the case of repeatedly performing a series of valve opening and closing sequences as in variations 6, 11, 12, 16, 21, and 22, in the first sequence, the fork is brought close to the inner surface of VTM11 near the air inlets 33, 34, and 35 in sequence, corresponding to the supply of purge gas. Furthermore, in the second sequence, the fork is brought close to the inner surface of VTM11 near the air inlets 38, 37, and 36 in sequence, corresponding to the supply of purge gas. This improves the cleaning effect.

[0244] Furthermore, in the aforementioned variations 13 to 22, the valve opening and closing sequence is controlled separately for the groups of inlets 30 to 32, 39, and 40 and the group of inlets 33 and 38, but this is not a limitation. For example, the groups of inlets 30 to 32, 39, and 40 and the group of inlets 33 and 38 can also be controlled by simultaneously supplying purge gas at a predetermined time.

[0245] According to the first embodiment, the substrate processing apparatus 1 includes: a vacuum transport chamber 11 having a top surface, a bottom surface opposite to the top surface, and a side surface between the top and bottom surfaces, the side surface having a first side surface and a second side surface opposite to the first side surface; a transport robotic arm (robotic arm 12) disposed within the vacuum transport chamber for transporting a substrate (wafer); a load locking module 15 connected to the first side surface; piping (56, 58) connected to a purge gas supply source 54 for supplying purge gas into the vacuum transport chamber 11; at least one air inlet (30) disposed on the top surface near the second side surface and connected to the piping; and at least one exhaust port 42 disposed on the bottom surface near the first side surface of the vacuum transport chamber 11 and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transport chamber. As a result, particle accumulation can be suppressed by eliminating gas retention.

[0246] Furthermore, according to the first embodiment, "near the second side" refers to the portion of the top surface closest to the second side when the top surface is divided into eight equal parts from the first side to the second side in the direction from the first side to the second side. As a result, particle accumulation can be suppressed by eliminating gas retention.

[0247] Furthermore, according to the first embodiment, multiple air inlets are provided. As a result, particulate accumulation can be suppressed by eliminating gas retention.

[0248] Furthermore, according to the first embodiment, the air inlets (30-32, 39, 40) are also provided on the top surface near the first side. As a result, particulate accumulation can be suppressed by eliminating gas retention.

[0249] Furthermore, according to the first embodiment, the air inlet is also provided at the connection portion of the first gate (16) provided between the load locking module 15 and the vacuum delivery chamber 11, and at the connection portion 14a of the second gate (14) provided between the vacuum delivery chamber 11 and the processing module 13. As a result, particle accumulation can be suppressed by eliminating the retention of purge gas containing gas components.

[0250] Furthermore, according to the first embodiment, the piping includes: a first piping (59) that supplies purge gas to inlets located near the top surfaces (39, 40) of the first side and near the top surfaces (30-32) of the second side via a first mass flow controller (MFC60) that controls the flow rate of the purge gas; a second piping (63) that supplies purge gas to inlets (39-41) located at the connection of the first gate via a second mass flow controller (MFC64) that controls the flow rate of the purge gas; and a third piping (58) that supplies purge gas to inlets (33-38) located at the connection of the second gate 14a via a third mass flow controller (MFC68) that controls the flow rate of the purge gas. As a result, the flow of purge gas in the vacuum delivery chamber 11 becomes uniform, eliminating the stagnation of purge gas containing gaseous components, thereby suppressing particle accumulation.

[0251] Furthermore, according to the first embodiment, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transport chamber 11 is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open. As a result, the airflow of purge gas within the vacuum transport chamber 11 can be made uniform.

[0252] Furthermore, according to the first embodiment, when the vacuum transport chamber 11 is in standby mode or during substrate transport, and when the second gate is open, the second mass flow controller controls the flow rate to stop the supply of purge gas. When the first gate is open, the flow rate is controlled to stop the supply of purge gas or the purge gas is supplied via gradual control. As a result, the influence of the atmosphere on the load locking module 15 side can be reduced.

[0253] Furthermore, according to the first embodiment, the third mass flow controller controls the flow rate to stop supplying purge gas when the vacuum transport chamber 11 is in standby mode or during substrate transport, and when the first gate is open. When the second gate is open, the flow rate is controlled to supply purge gas through gradual control. As a result, turbulence in the airflow within the vacuum transport chamber 11 can be suppressed, and the influence of the atmosphere on the processing module 13 side can be reduced.

[0254] Furthermore, according to Modification 1, the piping includes: a first piping (59) that supplies purge gas to inlets located near the top surfaces (39, 40) of the first side and near the top surfaces (30-32) of the second side via a first mass flow controller (MFC60) that controls the flow rate of the purge gas; and a fourth piping (90) that supplies purge gas to inlets (33-41) located at the connection of the first gate and the connection of the second gate 14a via a fourth mass flow controller (MFC91) that controls the flow rate of the purge gas. As a result, the flow of purge gas in the vacuum delivery chamber 11 becomes uniform, eliminating the stagnation of purge gas containing gaseous components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the embodiment described above.

[0255] Furthermore, according to Modification 1, the first mass flow controller controls the flow rate to ensure continuous supply of purge gas when the vacuum delivery chamber 11 is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open. As a result, the airflow of purge gas within the vacuum delivery chamber 11 can be made uniform.

[0256] Furthermore, according to the first embodiment, when the vacuum transport chamber 11 is in standby mode or during substrate transport, the fourth mass flow controller controls the flow rate to stop supplying purge gas; when the first gate is open and the second gate is open, it controls the flow rate to supply purge gas through gradual control. As a result, turbulence in the airflow within the vacuum transport chamber 11 can be suppressed, and the influence of the atmosphere on the processing module 13 and load locking module 15 sides can be reduced.

[0257] Furthermore, according to Modification 2, the piping includes: a fifth piping (59) that supplies purge gas to inlets located near the top surfaces (39, 40) of the first side and near the top surfaces (30-32) of the second side via a first throttle orifice (95) and a first valve (62); and a fourth piping (90) that supplies purge gas to inlets (33-41) located at the connection of the first gate and the connection of the second gate 14a via a fourth mass flow controller (MFC91) that controls the flow of purge gas. As a result, the flow of purge gas in the vacuum delivery chamber 11 becomes uniform, eliminating the stagnation of purge gas containing gaseous components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the embodiment described above. Moreover, the cost can be reduced compared to Modification 1.

[0258] Furthermore, according to Modification 2, when the vacuum delivery chamber 11 is in standby mode or during substrate delivery, and when the first gate is open and the second gate is open, purge gas is supplied. As a result, the purge gas flow within the vacuum delivery chamber 11 becomes uniform.

[0259] Furthermore, according to Modification 2, when the vacuum transport chamber 11 is in standby mode or during substrate transport, the fourth mass flow controller controls the flow rate to stop supplying purge gas; when the first gate is open and the second gate is open, it controls the flow rate to supply purge gas through gradual control. As a result, turbulence in the airflow within the vacuum transport chamber 11 can be suppressed, and the influence of the atmosphere on the processing module 13 and load locking module 15 sides can be reduced.

[0260] Furthermore, according to Modification 3, the piping includes: a first piping (59) that supplies purge gas to inlets located near the top surfaces (39, 40) of the first side and near the top surfaces (30-32) of the second side via a first mass flow controller (MFC60) that controls the flow rate of the purge gas; and a sixth piping (96) that supplies purge gas to inlets located at the connection of the first gate and the connection of the second gate 14a via a second throttling orifice (97a-97i) and a second valve (94a-94i) that controls the flow rate of the purge gas, wherein the second throttling orifice (97a-97i) and the second valve (94a-94i) are provided for each inlet (33-41) of the connection of the first gate and the connection of the second gate 14a. As a result, the flow of purge gas in the vacuum delivery chamber 11 becomes uniform, eliminating the stagnation of purge gas containing gaseous components, thereby suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above-described embodiments. Additionally, the cost can be reduced compared to Modification 1.

[0261] Furthermore, according to Modification 3, the first mass flow controller controls the flow rate to ensure continuous supply of purge gas when the vacuum delivery chamber 11 is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open. As a result, the airflow of purge gas within the vacuum delivery chamber 11 can be made uniform.

[0262] Furthermore, according to Modification 3, when the vacuum delivery chamber 11 is in standby mode or during substrate transport, the flow rate of the multiple second throttling orifices and the second valves is controlled to stop the supply of purge gas, while when the first gate is open and the second gate is open, the purge gas is continuously supplied. As a result, turbulence in the airflow within the vacuum delivery chamber 11 can be suppressed, and the influence of the atmosphere on the processing module 13 and load locking module 15 sides can be reduced.

[0263] Furthermore, according to the second embodiment, the vacuum delivery chamber includes a top surface, a bottom surface opposite to the top surface, and a side surface between the top and bottom surfaces. The side surface includes a first side surface and a second side surface opposite to the first side surface. The control device 100 performs the following steps: Step a, while venting the vacuum delivery chamber 11 from an exhaust port 42 located on the bottom surface near the first side surface, purge gas is supplied for a predetermined time from a first air inlet (30) located on the top surface near the second side surface and at the position furthest from the exhaust port 42; and Step b, while venting the vacuum delivery chamber 11 from the exhaust port 42, purge gas is supplied for a predetermined time from a second air inlet (33-40) located on the side of the first side surface closer to the first air inlet. As a result, the shock wave of the purge gas can fill the entire vacuum delivery chamber 11, and the cleaning time of the vacuum delivery chamber 11 can be shortened.

[0264] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. In fact, the above embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0265] Furthermore, while N2 was used as the purging gas in the above embodiments, it is not a limitation. For example, rare gases such as He, Ne, and Ar can also be used as the purging gas.

[0266] Regarding the above-described embodiments, the following notes are further disclosed.

[0267] (Note 1) A method for cleaning a vacuum transport chamber, wherein...

[0268] The empty conveying chamber has a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. The side surface has a first side surface and a second side surface opposite to the first side surface.

[0269] The cleaning method for the vacuum delivery chamber includes:

[0270] Step a: While venting the vacuum delivery chamber from the exhaust port located near the bottom surface of the first side, purge gas is supplied from the first air inlet located near the top surface of the second side and at the position furthest from the exhaust port for a predetermined time; and

[0271] Step b involves venting the vacuum delivery chamber from the exhaust port while simultaneously supplying the purging gas from a second air inlet located on the side closer to the first side than the first air inlet, for the specified time.

[0272] (Appendix 2) The cleaning method for the vacuum transport chamber described in Appendix 1,

[0273] Step c involves repeatedly performing steps a and b.

[0274] (Appendix 3) The cleaning method for the vacuum transport chamber described in Appendix 1,

[0275] Step d involves repeatedly performing step a a predetermined number of times, followed by repeatedly performing step b a predetermined number of times.

[0276] (Appendix 4) The cleaning method for the vacuum transport chamber described in Appendix 1 or 2, wherein,

[0277] Step b begins the supply of the purging gas before the specified time has elapsed in step a.

[0278] (Appendix 5) The cleaning method for the vacuum transport chamber described in any of Appendices 1 to 4, wherein,

[0279] In steps a and b, the flow rate of the exhaust or purging gas from the exhaust port is controlled so that the pressure in the vacuum delivery chamber is above 133 Pa.

[0280] (Appendix 6) The cleaning method for the vacuum transport chamber described in any of Appendices 1 to 5, wherein,

[0281] In step b, when multiple second air inlets are provided on the exhaust port side, the purging gas is supplied sequentially from the second air inlets on the second side side at the predetermined time intervals.

[0282] (Appendix 7) The cleaning method for the vacuum transport chamber described in Appendix 6, among which,

[0283] Step b begins the supply of purge gas from the next second air inlet before the predetermined time has elapsed during the purge gas supply process.

[0284] (Appendix 8) The cleaning method for the vacuum transport chamber described in any of Appendices 1 to 7, wherein,

[0285] During the specified time period, steps a and b involve applying a high voltage to electrodes located within the vacuum transport robotic arm inside the vacuum transport chamber.

[0286] (Appendix 9) The cleaning method for the vacuum transport chamber described in Appendix 8, among which,

[0287] The absolute value of the high voltage is in the range of 1 to 5 kV.

[0288] (Appendix 10) The cleaning method for the vacuum transport chamber described in any of Appendices 1 to 9, wherein,

[0289] Step e, which involves steps a and b, is executed when a particle detector located on the exhaust path connected to the exhaust port detects a number of particles exceeding a threshold.

[0290] (Appendix 11) A substrate processing apparatus, comprising:

[0291] A vacuum transport chamber having a top surface, a bottom surface opposite the top surface, and a side surface between the top surface and the bottom surface, the side surface having a first side surface and a second side surface opposite the first side surface; and

[0292] Control Department

[0293] The control unit is configured to control the substrate processing apparatus such that a) while venting the vacuum delivery chamber from an exhaust port located near the bottom surface of the first side, purge gas is supplied for a predetermined time from a first air inlet located near the top surface of the second side and at the position furthest from the exhaust port; and

[0294] The control unit is configured to control the substrate processing apparatus such that b) while venting the vacuum delivery chamber from the exhaust port, the purge gas is supplied from a second air inlet located on the side of the first side closer to the first air inlet for the predetermined time.

Claims

1. A substrate processing apparatus, characterized in that, include: A vacuum transport chamber has a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. The side surface has a first side surface, a second side surface opposite to the first side surface, and a pair of opposing side surfaces disposed between the first side surface and the second side surface. The vacuum transport chamber is a single space defined by the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces. A conveying robotic arm for conveying substrates is configured within the vacuum conveying chamber; A load locking module configured along the first side; A first gate connecting the vacuum delivery chamber and the load locking module; Multiple processing modules are connected to multiple second gates of the vacuum delivery chamber, and the multiple processing modules are arranged along each of the pair of sides; Multiple air inlets for supplying purge gas into the vacuum delivery chamber; Piping connecting the plurality of air inlets to the purge gas supply source; and At least one exhaust port is disposed on the bottom surface near the first side of the vacuum delivery chamber and connected to an exhaust pump for venting the purge gas supplied to the vacuum delivery chamber. The plurality of air inlets include: an air inlet located on the top surface near the second side surface or on the second side surface near the top surface; and air inlets respectively located at the connection between the vacuum delivery chamber and the plurality of second gates.

2. The substrate processing apparatus as described in claim 1, characterized in that: The "nearby" of the second side refers to the portion of the top surface closest to the second side when the top surface is divided into eight equal parts from the first side to the second side in the direction from the first side to the second side.

3. The substrate processing apparatus as described in claim 1, characterized in that: The plurality of air inlets includes an air inlet located on the top surface near the center of the second side surface. The at least one exhaust port is located on the bottom surface near the center of the first side.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The plurality of air inlets are also disposed on the top surface near the first side.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The multiple air inlets are also located at the connection of the first gate.

6. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The plurality of air inlets are also disposed on the top surface near the first side and at the connection portion of the first gate. The piping has: A first piping supplyes the purge gas to the plurality of air inlets located near the top surface near the first side and near the top surface near the second side, or near the top surface near the first side and near the second side, respectively, via a first mass flow controller that controls the flow rate of the purge gas. The second piping supplies the purging gas to the plurality of air inlets located at the connection of the first gate via a second mass flow controller that controls the flow rate of the purging gas. and The third piping supplies the purging gas to the plurality of air inlets provided at the connection of the plurality of second gates via a third mass flow controller that controls the flow rate of the purging gas.

7. The substrate processing apparatus as described in claim 6, characterized in that: The first mass flow controller controls the flow rate to continuously supply the purging gas when the vacuum transport chamber is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open.

8. The substrate processing apparatus as described in claim 7, characterized in that: The second mass flow controller, When the vacuum transport chamber is in standby mode or during substrate transport, and when the second gate is open, the flow rate is controlled to stop the supply of purge gas. When the first gate is open, the flow rate is controlled to stop the supply of the purge gas or to supply the purge gas by gradual control.

9. The substrate processing apparatus as described in claim 8, characterized in that: The third mass flow controller When the vacuum transport chamber is in standby mode or during substrate transport, and when the first gate is open, the flow rate is controlled to stop the supply of purge gas. With the second gate open, the flow rate is controlled so that the purge gas is supplied through gradual control.

10. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The plurality of air inlets are also disposed on the top surface near the first side and at the connection portion of the first gate. The piping includes: A first piping supplyes the purge gas, via a first mass flow controller that controls the flow rate of the purge gas, to the plurality of inlets located on the top surface near the first side and the top surface near the second side, or on the top surface near the first side and the second side near the top surface; and A fourth piping supplyes the purging gas to the air inlets of the connection portions of the first gate and the plurality of second gates, respectively, via a fourth mass flow controller that controls the flow rate of the purging gas.

11. The substrate processing apparatus as claimed in claim 10, characterized in that: The first mass flow controller controls the flow rate to continuously supply the purging gas when the vacuum transport chamber is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open.

12. The substrate processing apparatus as claimed in claim 11, characterized in that: The fourth mass flow controller, When the vacuum transport chamber is in standby mode or during substrate transport, the flow rate is controlled to stop the supply of purge gas. When the first gate is open and when the second gate is open, the flow rate is controlled so that the purge gas is supplied by gradual control.

13. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The plurality of air inlets are also disposed on the top surface near the first side and at the connection portion of the first gate. The piping includes: A fifth piping supplyes the purge gas via a first throttle orifice and a first valve to the plurality of air inlets located near the top surface near the first side and near the top surface near the second side, or near the top surface near the first side and near the second side. A fourth piping supplyes the purging gas to the plurality of air inlets located at the connection of the first gate and the connection of the second gate, respectively, via a fourth mass flow controller that controls the flow rate of the purging gas.

14. The substrate processing apparatus as described in claim 13, characterized in that: The first throttle orifice and the first valve supply the purging gas when the vacuum transport chamber is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open.

15. The substrate processing apparatus as described in claim 14, characterized in that: The fourth mass flow controller, When the vacuum transport chamber is in standby mode or during substrate transport, the flow rate is controlled to stop the supply of purge gas. When the first gate is open and when the second gate is open, the flow rate is controlled so that the purge gas is supplied by gradual control.

16. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The plurality of air inlets are also disposed on the top surface near the first side and at the connection portion of the first gate. The piping includes: A first piping supplyes the purge gas, via a first mass flow controller that controls the flow rate of the purge gas, to the plurality of inlets located on the top surface near the first side and the top surface near the second side, or on the top surface near the first side and the second side near the top surface; and A sixth piping supplyes the purging gas to the plurality of air inlets located at the connection portion of the first gate and the connection portion of the second gate via a second throttle orifice and a second valve that control the flow rate of the purging gas. The second throttle orifice and the second valve are provided for each of the plurality of air inlets located at the connection portion of the first gate and the connection portion of the second gate.

17. The substrate processing apparatus as claimed in claim 16, characterized in that: The first mass flow controller controls the flow rate to continuously supply the purging gas when the vacuum transport chamber is in standby mode or during substrate transport, when the first gate is open, and when the second gate is open.

18. The substrate processing apparatus as claimed in claim 17, characterized in that: Multiple second throttle orifices and the second valve, When the vacuum transport chamber is in standby mode or during substrate transport, the flow rate is controlled to stop the supply of purge gas. When the first gate is open and when the second gate is open, the purging gas is continuously supplied.

19. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The second side is composed of two surfaces, so that the vacuum delivery chamber is pentagonal when viewed from above.

20. A method for controlling purge gas in a substrate processing apparatus, characterized in that: The substrate processing apparatus includes: A vacuum transport chamber has a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. The side surface has a first side surface, a second side surface opposite to the first side surface, and a pair of opposing side surfaces disposed between the first side surface and the second side surface. The vacuum transport chamber is a single space defined by the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces. A conveying robotic arm for conveying substrates is configured within the vacuum conveying chamber; A load locking module configured along the first side; A first gate connecting the vacuum delivery chamber and the load locking module; Multiple processing modules are connected to multiple second gates of the vacuum delivery chamber, and the multiple processing modules are arranged along each of the pair of sides; Multiple air inlets for supplying purge gas into the vacuum delivery chamber; Piping connecting the plurality of air inlets to the purge gas supply source; and At least one exhaust port is disposed on the bottom surface near the first side of the vacuum delivery chamber and connected to an exhaust pump for venting the purge gas supplied to the vacuum delivery chamber. The plurality of air inlets include: an air inlet located on the top surface near the second side surface or on the second side surface near the top surface; and air inlets respectively located at the connection between the vacuum delivery chamber and the plurality of second gates. The method for controlling the purging gas includes: The steps of supplying purge gas from the plurality of air inlets to the vacuum delivery chamber: and The step of venting the purge gas supplied to the vacuum delivery chamber from the at least one exhaust port.

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