semiconductor devices

Abstract

The semiconductor device of the embodiment includes a light-emitting element, a light-receiving element, a switching element, an input-side terminal, an output-side terminal, a first resin layer, and a second resin layer. The light-receiving element is optically coupled to the light-emitting element, and the switching element is electrically connected to the light-receiving element. The input-side terminal is electrically connected to the light-emitting element, and the output-side terminal is electrically connected to the switching element. The first resin layer has a surface side and a back side opposite to the surface side, the light-emitting element, the light-receiving element, and the switching element are arranged on the surface side, and the input-side terminal and the output-side terminal are arranged on the back side. The light-receiving element is arranged between the light-emitting element and the first resin layer, and the light-receiving element and the switching element are arranged side by side in the first direction. The input-side terminal and the output-side terminal are arranged separately, and at least one of the input-side terminal and the output-side terminal is arranged to include a portion overlapping with the light-receiving element in the second direction. The second resin layer seals the light-emitting element, the light-receiving element, and the switching element on the surface side of the first resin layer.

Description

[0001] Related applications

[0002] This application claims priority based on Japanese Patent Application No. 2020-156329 (filing date: September 17, 2020), and the entire contents of the basic application are incorporated herein by reference. Technical Field

[0003] Embodiments relate to a semiconductor device. Background Art

[0004] Some semiconductor devices have a resin-sealed semiconductor chip on a glass epoxy substrate. In such semiconductor devices, terminals connecting the semiconductor chip to external circuits are located on the backside of the glass epoxy substrate. Therefore, intermediate wiring electrically connecting the semiconductor chip to the terminals is provided within the glass epoxy substrate. Furthermore, to enable high-speed operation of the semiconductor chip, it is desirable to shorten the intermediate wiring electrically connecting the semiconductor chip to the terminals. Summary of the Invention

[0005] Embodiments provide a semiconductor device having improved high-frequency transmission characteristics of a semiconductor chip.

[0006] A semiconductor device according to an embodiment includes a light-emitting element, a light-receiving element, at least one switching element, at least one input-side terminal, at least one output-side terminal, a first resin layer, and a second resin layer. The light-receiving element is optically coupled to the light-emitting element, and the switching element is electrically connected to the light-receiving element. The input-side terminal is electrically connected to the light-emitting element, and the output-side terminal is electrically connected to the switching element. The first resin layer has a front side and a back side opposite the front side. The light-emitting element, the light-receiving element, and the switching element are disposed on the front side, and the input-side terminal and the output-side terminal are disposed on the back side. The light-receiving element is disposed between the light-emitting element and the first resin layer, and the light-receiving element and the switching element are arranged side by side in a first direction along the front side. The input-side terminal and the output-side terminal are disposed separately, and at least one of the input-side terminal and the output-side terminal is disposed so as to include a portion overlapping the light-receiving element in a second direction from the first resin layer toward the light-emitting element. The second resin layer seals the light-emitting element, the light-receiving element, and the switching element on the front side of the first resin layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 This is a schematic cross-sectional view showing the semiconductor device according to the first embodiment.

[0008] Figure 2It is a schematic diagram showing the semiconductor device according to the first embodiment.

[0009] Figure 3 (a) and (b) are schematic plan views showing input-side terminals and output-side terminals of the semiconductor device according to the first embodiment.

[0010] Figure 4 (a) and (b) are schematic cross-sectional views showing a semiconductor device according to a modification of the first embodiment.

[0011] Figure 5 (a) and (b) are schematic cross-sectional views showing a semiconductor device according to another modified example of the first embodiment.

[0012] Figure 6 It is a schematic cross-sectional view showing a semiconductor device according to a second embodiment.

[0013] Figure 7 (a) and (b) are schematic plan views showing a semiconductor device according to a second embodiment.

[0014] Figure 8 (a) to (e) are schematic cross-sectional views showing a manufacturing process of the semiconductor device according to the second embodiment. DETAILED DESCRIPTION

[0015] The following describes the embodiments with reference to the accompanying drawings. Identical parts in the drawings are denoted by the same reference numerals, and detailed descriptions thereof are omitted as appropriate. The following describes different parts. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratios between parts, and the like may not necessarily be the same as in reality. Furthermore, even when depicting identical parts, the dimensions and ratios may differ depending on the drawing.

[0016] Furthermore, the arrangement and structure of each component will be described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are orthogonal to each other and represent the X-direction, Y-direction, and Z-direction, respectively. In addition, the Z-direction may be described as upward, and the opposite direction may be described as downward.

[0017] (First embodiment)

[0018] Figure 1 1 is a schematic cross-sectional view showing a semiconductor device 1 according to Embodiment 1. The semiconductor device 1 is, for example, a photorelay.

[0019] Semiconductor device 1 includes a light emitting element 20, a light receiving element 30, and a switching element 40. Light emitting element 20 is, for example, a light emitting diode. Light receiving element 30 includes, for example, a plurality of photodiodes provided on a silicon substrate. Switching element 40 is, for example, a MOS transistor.

[0020] like Figure 1 As shown, the light emitting element 20 is mounted on the light receiving element 30. The light emitting element 20 is bonded to the surface of the light receiving element 30 via a transparent adhesive layer, for example. The light emitting element 20 emits light to the back side, for example, and is mounted with the back side facing the light receiving element 30.

[0021] The light receiving element 30 and the switch element 40 are mounted on the resin layer 10. The resin layer 10 is provided on the back side of the light receiving element 30 and the back side of the switch element 40. The resin layer 10 is, for example, a polyimide layer. The thickness of the resin layer 10 in the direction from the back side to the front side (Z direction) is, for example, 50 micrometers or less.

[0022] Mounting pads 11, bonding pads 13, and mounting pads 15 are provided on the surface of resin layer 10. Mounting pads 11, bonding pads 13, and mounting pads 15 are arranged separately from each other. Mounting pad 11 is provided, for example, between bonding pad 13 and mounting pad 15. Mounting pads 11, bonding pads 13, and mounting pads 15 are made of, for example, copper.

[0023] The light emitting element 20 is electrically connected to the bonding pad 13 via the metal wire MW. The light receiving element 30 is mounted on the mounting pad 11 via an adhesive layer (not shown) such as a touch film. The switching element 40 is mounted on the mounting pad 15 via a conductive paste (not shown).

[0024] The mounting pad 11 is provided between the resin layer 10 and the light receiving element 30 . The mounting pad 15 is provided between the resin layer 10 and the switching element 40 .

[0025] The light emitting element 20 is sealed on the light receiving element 30 by a resin layer 55. The resin layer 55 includes, for example, silicone and is formed on the light receiving element 30 using, for example, a potting method.

[0026] The light receiving element 30 and the switching element 40 are sealed on the resin layer 10 by the resin layer 50. The resin layer 50 is provided so as to cover the resin layer 55. The resin layer 50 is, for example, a polyimide layer or an epoxy resin.

[0027] Input terminals 17 and output terminals 19 are provided on the back surface of resin layer 10. Input terminals 17 and output terminals 19 are provided separately from each other. Input terminals 17 face bonding pads 13 across a portion of resin layer 10. Output terminals 19 face mounting pads 15 across another portion of resin layer 10.

[0028] The resin layer 10 includes a through-hole contact Vc1 provided between the bonding pad 13 and the input-side terminal 17, and a through-hole contact Vc2 provided between the mounting pad 15 and the output-side terminal 19. The input-side terminal 17 is electrically connected to the bonding pad 13 via the through-hole contact Vc1, which penetrates the resin layer 10 in the Z direction. The output-side terminal 19 is electrically connected to the mounting pad 15 via the through-hole contact Vc2, which penetrates the resin layer 10 in the Z direction.

[0029] The light emitting element 20 is electrically connected to the input-side terminal 17 via the metal wire MW, the bonding pad 13, and the via contact Vc1. The switching element 40 is electrically connected to the output-side terminal 19 via the mounting pad 15 and the via contact Vc2.

[0030] Via contacts Vc1 and Vc2 have a length in the Z direction equal to the thickness of resin layer 10 in the Z direction, for example. The thickness of resin layer 10 is 50 μm or less, and the bonding pad 13 and input-side terminal 17 are electrically connected by the length of via contact Vc1. Furthermore, the switching element 40 and output-side terminal 19 are also electrically connected by the length of via contact Vc2. This reduces parasitic inductance caused by the wiring length in resin layer 10, enabling high-speed operation of semiconductor device 1.

[0031] Furthermore, when viewed from the Z direction, the input-side terminal 17 includes a portion overlapping with the light-receiving element 30 . That is, the resin layer 10 includes a portion located between a portion of the input-side terminal 17 and the light-receiving element 30 .

[0032] For example, when ultrasonically bonding the metal wire MW to the light emitting element 20 and the light receiving element 30, the ultrasonic wave may be absorbed by the resin layer 10, and the ultrasonic wave strength required for bonding may not be achieved. Therefore, the bonding strength may be insufficient, and the reliability of the semiconductor device 1 may be reduced.

[0033] In this embodiment, a portion of input terminal 17 overlaps light receiving element 30, and ultrasonic waves are efficiently transmitted from input terminal 17 to light receiving element 30. This improves the bonding strength of metal wire MW and the reliability of semiconductor device 1.

[0034] Figure 2 Schematic diagram showing the semiconductor device 1 according to the first embodiment. Figure 2 It is a plan view and an equivalent circuit diagram showing the layout on the surface of the resin layer 10 .

[0035] like Figure 2 As shown, the semiconductor device 1 includes bonding pads 13a and 13b, and switching elements 40a and 40b. The bonding pads 13a and 13b are connected to input-side terminals 17a and 17b (see FIG. Figure 3(a)) is electrically connected. The switching elements 40a and 40b are respectively connected to the output side terminals 19a and 19b (refer to Figure 2 (b)) is electrically connected. In this specification, the bonding pads 13a and 13b are sometimes collectively described as bonding pads 13. The same applies to other components.

[0036] The light emitting element 20 includes a first electrode 23 and a second electrode 25. The first electrode 23 is, for example, a p-electrode. The second electrode 25 is, for example, an n-electrode. The first electrode 23 is electrically connected to the bonding pad 13a via a metal wire MW1. The second electrode 25 is electrically connected to the bonding pad 13b via a metal wire MW2.

[0037] The light receiving element 30 includes, for example, cathode terminals 31a and 31b and anode terminals 33a and 33b. The switching element 40a includes, for example, a source electrode 41a and a gate electrode 43a. The switching element 40b includes, for example, a source electrode 41b and a gate electrode 43b.

[0038] The switching elements 40a and 40b are arranged in parallel along the Y direction on the resin layer 10. In the light receiving element 30, the cathode terminal 31a and the anode terminal 33a are provided at one end in the Y direction, and the cathode terminal 31b and the anode terminal 33b are provided at the other end in the Y direction.

[0039] The cathode terminal 31a of the light receiving element 30 is electrically connected to the source electrode 41a of the first switching element 40a via the metal wire MW3. The anode terminal 33a of the light receiving element 30 is electrically connected to the gate electrode 43a of the first switching element 40a via the metal wire MW4.

[0040] The cathode terminal 31b of the light receiving element 30 is electrically connected to the source electrode 41b of the second switching element 40b via the metal wire MW5. The anode terminal 33b of the light receiving element 30 is electrically connected to the gate electrode 43b of the second switching element 40b via the metal wire MW6.

[0041] The source electrode 41 a of the first switching element 40 a is electrically connected to the source electrode 41 b of the second switching element 40 b via the metal wire MW7 .

[0042] In the semiconductor device 1, the input terminals 17a and 17b (see Figure 3 (a) A current signal, for example, is input to the light emitting element 20 via the bonding pads 13a and 13b and the metal wires MW1 and MW2. The light emitting element 20 emits a light signal corresponding to the current signal input to the light receiving element 30.

[0043] The light-receiving element 30 includes, for example, a photodiode array 30a and a control circuit 30b. The photodiode array 30a receives the light signal from the light-emitting element 20 and outputs a voltage signal to the control circuit 30b. The control circuit 30b outputs the voltage signal between the gate and source of the first switching element 40a via the cathode terminal 31a and the anode terminal 33a. Furthermore, the control circuit 30b outputs the voltage signal between the gate and source of the second switching element 40b via the cathode terminal 31b and the anode terminal 33b.

[0044] The photodiode array 30a receives the optical signal emitted from the light emitting element 20 and applies a predetermined voltage between the gate and source of each of the first switching element 40a and the second switching element 40b, thereby turning on the first switching element 40a and the second switching element 40b. This creates electrical conduction between the output terminal 19a and the output terminal 19b.

[0045] In this embodiment, the parasitic inductance between the input-side terminal 17a and the bonding pad 13a, and between the input-side terminal 17b and the bonding pad 13b, can be reduced. Furthermore, the parasitic inductance between the first switching element 40a and the output-side terminal 19a, and between the second switching element 40b and the output-side terminal 19b, can be reduced. Consequently, a signal corresponding to the high-frequency modulated input signal can be output via the first switching element 40a and the second switching element 40b.

[0046] Figure 3 (a) and (b) are schematic plan views showing input-side terminals and output-side terminals of the semiconductor device 1 according to the first embodiment. Figure 3 (a) and (b) show input terminals 17a and 17b and output terminals 19a and 19b provided on the back surface of the resin layer 10. The dotted line shown in the figure indicates the position of the light receiving element 30.

[0047] like Figure 3 As shown in (a), the input side terminals 17a and 17b each include a portion overlapping with the light receiving element 30 when viewed from the Z direction. Thus, the light emitting element 20 and the light receiving element 30 are connected to a portion of the input side terminal 17 via the resin layer 10. Figure 2 During the bonding of (a)), for example, the ultrasonic wave supplied to the bonding ball is transmitted to each electrode on the surface of the light emitting element 20 (see Figure 2 ) and the terminals of the light receiving element 30 (see Figure 2 ), the metal wire can be firmly crimped through this vibration.

[0048] exist Figure 3In the example shown in (b), the input-side terminal 17b includes a portion overlapping the light-receiving element 30 when viewed in the Z direction. On the other hand, the input-side terminal 17a is arranged so as not to overlap the light-receiving element 30 when viewed in the Z direction. Thus, either the input-side terminal 17a or the input-side terminal 17b may overlap the light-receiving element 30.

[0049] Figure 4 (a) and (b) are schematic cross-sectional views showing a semiconductor device 2 according to a modified example of the first embodiment. Figure 4 (a) is a schematic cross-sectional view of the semiconductor device 2 . Figure 4 (b) shows input terminals 17a and 17b and output terminals 19a and 19b provided on the back surface of the resin layer 10. The dotted line shown in the figure indicates the position of the light receiving element 30.

[0050] like Figure 4 As shown in (a) of FIG. 2 , in the semiconductor device 2, the input terminal 17 and the output terminal 19 are each provided so as to extend along the back surface of the resin layer 10 to below the light receiving element 30. In other words, the resin layer 10 includes a portion located between the input terminal 17 and the light receiving element 30 and another portion located between the output terminal 19 and the light receiving element 30.

[0051] like Figure 4 As shown in FIG. 5( b ), the input terminals 17 a and 17 b are respectively provided so as to overlap with the light receiving element 30 when viewed in the Z direction. Furthermore, the output terminals 19 a and 19 b are respectively provided so as to overlap with the light receiving element 30 when viewed in the Z direction.

[0052] Alternatively, one of the input-side terminals 17a and 17b may be provided so as to overlap with the light-receiving element 30 when viewed in the Z direction ( Figure 3 (b) In addition, either one of the output-side terminals 19a and 19b may be provided so as to overlap with the light receiving element 30 when viewed in the Z direction.

[0053] Figure 5 (a) and (b) are schematic cross-sectional views showing a semiconductor device 3 according to another modified example of the first embodiment. Figure 5 (a) is a schematic cross-sectional view of the semiconductor device 3 . Figure 5 (b) shows input terminals 17a and 17b and output terminals 19a and 19b provided on the back surface of the resin layer 10. The dotted line shown in the figure indicates the position of the light receiving element 30.

[0054] like Figure 5As shown in FIG. 1 ( a ), in the semiconductor device 3 , the output terminal 19 is provided so as to extend along the back surface of the resin layer 10 to below the light receiving element 30 . That is, the resin layer 10 includes a portion located between the output terminal 19 and the light receiving element 30 .

[0055] like Figure 5 As shown in (b), when viewed in the Z direction, the input-side terminals 17a and 17b are arranged so as not to overlap with the light-receiving element 30. The output-side terminals 19a and 19b are respectively arranged so as to overlap with the light-receiving element 30 when viewed in the Z direction. Alternatively, either the output-side terminals 19a or 19b may overlap with the light-receiving element 30.

[0056] (Second embodiment)

[0057] Figure 6 Schematic cross-sectional view showing a semiconductor device 4 according to Embodiment 2. The semiconductor device 4 includes a resin layer 60 , an input pad 70 , and an output pad 80 instead of the resin layer 10 , the input terminal 17 , and the output terminal 19 .

[0058] Resin layer 60 is provided between input pads 70 and output pads 80. Resin layer 60, input pads 70, and output pads 80 each have a thickness in the Z direction of, for example, 100 μm or less. Furthermore, the thickness of resin layer 60 in the Z direction is preferably greater than the thickness of input pads 70 and output pads 80 in the Z direction. Resin layer 60 is, for example, a polyimide layer. Input pads 70 and output pads 80 are, for example, metal plates containing copper.

[0059] In this example, the light receiving element 30 is mounted on the resin layer 60 via, for example, an adhesive layer (not shown). The light receiving element 30 may also be mounted on, for example, the mounting pad 63. The light emitting element 20 is bonded to the surface of the light receiving element 30 via, for example, an adhesive layer (not shown) that is transparent to light emitted from the light emitting element 20. The light emitting element 20 is electrically connected to the input pad 70 via, for example, a metal wire MW.

[0060] The switching element 40 is mounted on the output pad 80 via, for example, a conductive paste (not shown). The switching element 40 is electrically connected to the light receiving element 30 via, for example, another metal wire MW.

[0061] The light emitting element 20 is sealed by the resin layer 55 on the surface side of the light receiving element 30. The light receiving element 30 and the switching element 40 are sealed by the resin layer 50 on the resin layer 60 and the output pad 80. The resin layer 50 covers the resin layer 55.

[0062] In this example, the metal wire MW connected to the light-emitting element 20 is directly bonded to the input pad 70. Furthermore, the switching element 40 is directly mounted on the output pad 80. This reduces the attenuation of high-frequency signals passing through the switching element 40. In other words, the transmission characteristics of high-frequency signals transmitted from the input side to the output side can be improved.

[0063] Figure 7 (a) and (b) are schematic plan views showing a semiconductor device 4 according to the second embodiment. Figure 7 (a) is a plan view showing the layout of the front surface side of the semiconductor device 4. Figure 7 (b) is a plan view showing the layout of the back surface side of the semiconductor device 4 .

[0064] like Figure 7 As shown in FIG. 1 (a), semiconductor device 4 includes input pads 70a and 70b, switching elements 40a and 40b, and output pads 80a and 80b. Switching elements 40a and 40b are mounted on output pads 80a and 80b, respectively. Resin layer 60 is provided to extend between input pads 70a and 70b, and between output pads 80a and 80b.

[0065] The first electrode 23 of the light emitting element 20 is electrically connected to the input pad 70a via the metal wire MW1. The second electrode 25 of the light emitting element 20 is electrically connected to the input pad 70b via the metal wire MW2.

[0066] The cathode terminal 31a of the light receiving element 30 is electrically connected to the source electrode 41a of the first switching element 40a via the metal wire MW3. The anode terminal 33a of the light receiving element 30 is electrically connected to the gate electrode 43a of the first switching element 40a via the metal wire MW4.

[0067] The cathode terminal 31b of the light receiving element 30 is electrically connected to the source electrode 41b of the second switching element 40b via the metal wire MW5. The anode terminal 33b of the light receiving element 30 is electrically connected to the gate electrode 43b of the second switching element 40b via the metal wire MW6.

[0068] The source electrode 41 a of the first switching element 40 a is electrically connected to the source electrode 41 b of the second switching element 40 b via the metal wire MW7 .

[0069] like Figure 7 As shown in (b) of FIG. 8 , the input pads 70 a and 70 b and the output pads 80 a and 80 b are exposed from the resin layer 60 on the back surface side.

[0070] Next, refer to Figure 8 (a) to (e) illustrate a method for manufacturing the semiconductor device 4. Figure 8(a) to (e) are schematic cross-sectional views showing a manufacturing process of the semiconductor device 4 according to the second embodiment.

[0071] like Figure 8 As shown in (a), input pads 70 and output pads 80 are arranged on a support plate 100, separated from each other. Output pads 80, for example, have grooves SG on their surface. Input pads 70 and output pads 80 are fixed to the support plate, for example, via an adhesive sheet (not shown). Support plate 100 is, for example, a stainless steel plate.

[0072] like Figure 8 As shown in (b), resin layer 60 is formed in the spaces between input pad 70 and output pad 80, between input pads 70a and 70b, and between output pads 80a and 80b. Resin layer 60 is formed by, for example, molding a resin such as polyimide on the surface of support plate 100, leaving a portion to be filled between input pad 70 and output pad 80, and then grinding the resin formed on input pad 70 and output pad 80. Resin layer 60 is formed, for example, by transfer molding or compression molding. Alternatively, resin layer 60 can be filled in the space between input pad 70 and output pad 80 using a dispenser.

[0073] like Figure 8 As shown in (c), the light receiving element 30 is mounted on the resin layer 60, and the switching element 40 is mounted on the output pad 80. The light receiving element 30 is mounted, for example, via a touch film (not shown) attached to the back side thereof. The switching element 40 is mounted, for example, via a conductive paste 45 applied to the surface of the output pad 80. The groove SG prevents the conductive paste 45 from spreading outside the switching element 40.

[0074] Furthermore, the light emitting element 20 is bonded to the light receiving element 30 via, for example, an adhesive (not shown) transparent to the emitted light. Next, the light emitting element 20 is electrically connected to the input pad 70 and the light receiving element 30 is electrically connected to the switch element 40 using metal wires MW.

[0075] like Figure 8 As shown in (d) of FIG. 5 , the light emitting element 20 is sealed on the light receiving element 30 by the resin layer 55. The resin layer 55 is potted on the light receiving element 30 using a dispenser, for example.

[0076] Next, resin layer 50 is formed to cover light-emitting element 20, light-receiving element 30, and switching element 40. Providing groove SG in output pad 80 prevents conductive paste 45 from spreading outward from switching element 40. This prevents conductive paste 45 from interposing between resin layer 50 and output pad 80, improving adhesion between resin layer 50 and output pad 80.

[0077] like Figure 8 As shown in (e), after the resin layer 50 is cured, the support plate 100 is peeled off. On the back side of the semiconductor device 4, the input pad 70 and the output pad 80 are exposed ( Figure 7 (b).

[0078] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These novel embodiments may be implemented in various other ways, and various omissions, substitutions, and modifications may be made without departing from the spirit of the invention. These embodiments and their variations are intended to be included within the scope and spirit of the invention and within the scope of the invention set forth in the claims and their equivalents.

Claims

1. A semiconductor device comprising: a light emitting element; a light receiving element connected to the light emitting element in a manner optically coupled to the light emitting element; and at least one switching element electrically connected to the light receiving element; at least one input-side terminal electrically connected to the light-emitting element; at least one output-side terminal electrically connected to the switching element; a first resin layer having a front surface and a back surface opposite to the front surface, the first resin layer being configured such that: the light-emitting element, the light-receiving element, and the switching element are provided on the front surface side, the input-side terminal and the output-side terminal are provided on the back surface side, the light-receiving element is provided between the light-emitting element and the first resin layer, the light-receiving element and the switching element are arranged side by side in a first direction along the front surface of the first resin layer, the input-side terminal and the output-side terminal are provided separately, and the output-side terminal includes a portion overlapping with the light-receiving element in a second direction from the first resin layer toward the light-emitting element; and a second resin layer that seals the light emitting element, the light receiving element, and the switching element on the surface side of the first resin layer.

2. The semiconductor device according to claim 1, wherein It also includes: a bonding pad, which is arranged on the surface side of the first resin layer and is electrically connected to the light-emitting element via a metal wire; a first through-hole contact, which penetrates the first resin layer along the second direction and electrically connects the bonding pad to the input-side terminal; a first mounting pad, which is arranged between the first resin layer and the switching element and is electrically connected to the switching element; and a second through-hole contact, which penetrates the first resin layer along the second direction and electrically connects the switching element to the output-side terminal.

3. The semiconductor device according to claim 2, wherein The light emitting element comprises: a back surface connected to the light receiving element; and a surface opposite to the back surface; and an electrode disposed on the surface, wherein the metal wire is bonded to the electrode on the surface.

4. The semiconductor device according to claim 2, wherein The second resin layer covers the metal wire and the bonding pad.

5. The semiconductor device according to claim 1, wherein The thickness of the first resin layer in the second direction is 50 micrometers or less. The semiconductor device according to claim 1 , wherein: The device further includes a second mounting pad provided between the first resin layer and the light receiving element.

7. The semiconductor device according to claim 1, wherein A third resin layer is further provided, the third resin layer sealing the light emitting element on the light receiving element, and the second resin layer covers the third resin layer.

8. The semiconductor device according to claim 1, wherein The switching element is a MOS transistor having a source electrode, a drain electrode, and a gate electrode. The light receiving element has two electrodes electrically connected to the source electrode and the gate electrode, respectively. The output terminal is electrically connected to the drain electrode.

9. The semiconductor device according to claim 8, wherein The switching element has a back surface opposite to the first resin layer and a surface opposite to the back surface, the source electrode and the gate electrode are arranged on the surface of the switching element, and the drain electrode is arranged on the back surface of the switching element. The light receiving element has a back surface opposite to the first resin layer and a surface opposite to the back surface, the surface of the light receiving element has a first area connected to the light emitting element and a second area outside the first area, a plurality of electrodes of the light receiving element are arranged on the second area, and the two electrodes of the light receiving element are electrically connected to the source electrode and the gate electrode respectively via metal wires.

10. The semiconductor device according to claim 1, wherein The device comprises: a first switching element and a second switching element, which are arranged on the surface side of the first resin layer; a first input side terminal and a second input side terminal, which are arranged on the back side of the first resin layer, and the first input side terminal and the second input side terminal are separated from each other; a first output side terminal and a second output side terminal, which are arranged on the back side of the first resin layer and separated from the first input side terminal and the second input side terminal, and the first output side terminal and the second output side terminal are separated from each other, the light emitting element has a first electrode and a second electrode, the first electrode is connected to the first input side terminal, the second electrode is electrically connected to the second input side terminal, the first switching element is electrically connected to the first output side terminal, and the second switching element is electrically connected to the second output side terminal, and the light receiving element overlaps with a portion of at least any one of the first input side terminal, the second input side terminal, the first output side terminal and the second output side terminal in the second direction.

11. A semiconductor device comprising: a light emitting element; and a light receiving element connected to the light emitting element in a manner optically coupled to the light emitting element. a switch element, electrically connected to the light receiving element and arranged side by side with the light receiving element in a first direction; a first metal plate having a surface electrically connected to the light emitting element and a back surface opposite to the surface; a first resin layer having a surface connected to the light receiving element and a back surface opposite to the surface, wherein the light receiving element is provided between the first resin layer and the light emitting element; a second metal plate having a surface electrically connected to the switching element and a back surface opposite to the surface, wherein the first metal plate, the first resin layer, and the second metal plate are arranged side by side in the first direction, and the first resin layer is provided between the first metal plate and the second metal plate; and a second resin layer that seals the light emitting element, the light receiving element, and the switching element, leaving the back surfaces of the first metal plate, the first resin layer, and the second metal plate exposed.

12. The semiconductor device according to claim 11, wherein A third resin layer covering the light emitting element is further provided on the light receiving element, and the third resin layer is provided between the second resin and the light receiving element.

13. The semiconductor device according to claim 11, wherein The second metal plate has grooves provided on the surface of the second metal plate.

14. The semiconductor device according to claim 11, wherein A thickness of the first resin layer in a second direction from the first resin layer toward the light emitting element is thicker than a thickness of the first metal plate and the second metal plate in the second direction.

Images